KR20190102986A - Light emitting device - Google Patents

Abstract

Provided is a light-emitting element capable of identifying the electrical characteristics of each of a plurality of light-emitting cells even when a plurality of semiconductor structures are connected to the light-emitting element. The light-emitting element includes: first and second light-emitting cells each including an n-side semiconductor layer, an active layer and a p-side semiconductor layer; a first insulating film covering the first and second light-emitting cells and having a first p-side opening, and a first n-side opening; a wiring electrode connected to the first light-emitting cell at the first n-side opening and connected to the second light-emitting cell at the first p-side opening; a first electrode connected to the first light-emitting cell at the first p-side opening; a second electrode connected to the second light-emitting cell at the first n-side opening; a second insulating film having a second p-side opening formed above the first electrode, a second n-side opening formed above the second electrode and a third opening formed above the wiring electrode; a first external connection portion connected to the first electrode at the second p-side opening; and a second external connection portion connected to the second electrode at the second n-side opening.

Description

Light emitting element {LIGHT EMITTING DEVICE}

The present invention relates to a light emitting element.

PTL 1 describes a light emitting element in which a plurality of light emitting cells are formed on a substrate, and the plurality of light emitting cells are connected in series by a wiring electrode.

Japanese Unexamined Patent Publication No. 2016-12707

In the above light emitting element, since the light emitting cells are connected in series, it is difficult to evaluate the electrical characteristics of each of the light emitting cells, and it may not be possible to confirm the occurrence or the like of the leakage current.

Then, an object of this invention is to provide the light emitting element which can confirm the electrical characteristic in each of the some light emitting cell, even if the light emitting element in which the some semiconductor structure is electrically connected by the wiring electrode.

A light emitting device according to an aspect of the present invention includes an insulating substrate, an n-side semiconductor layer formed on an upper surface of the substrate, an active layer formed on a region other than a part of the region on the upper surface of the n-side semiconductor layer, and First and second light emitting cells each having a p-side semiconductor layer formed on an upper surface of an active layer, a light reflective electrode formed on an upper surface of a p-side semiconductor layer in each of the first and second light emitting cells, and the first And a first p-side opening formed above the light reflective electrode and a part of the region on the upper surface of the n-side semiconductor layer, covering the second light emitting cell, respectively, for the first and second light emitting cells. A first insulating film having a first n-side opening formed in the first insulating film, and formed on an upper surface of the first insulating film, and connected to the n-side semiconductor layer of the first light emitting cell and the first n-side opening; Phase of luminescent cell A light-emitting electrode, a wiring electrode connected to the first p-side opening, and an upper surface of the first insulating film, and a light-connected electrode of the first light emitting cell and a first electrode connected to the first p-side opening. A first electrode, a second electrode formed on an upper surface of the first insulating film, and connected to the n-side semiconductor layer of the second light emitting cell and the first n-side opening, and a first electrode formed above the first electrode. A second insulating film having a 2p-side opening, a second n-side opening formed above the second electrode, a third opening formed above the wiring electrode, and the second electrode at the second p-side opening. And a first external connection part connected to each other, and a second external connection part connected to the second electrode at the second n-side opening part.

The light emitting element which concerns on another aspect of this invention is an insulating board | substrate and three or more light emitting cells connected in series, The said three or more light emitting cells are located in the other end of the 1st light emitting cell located in one end of a series circuit, and a series circuit. An n-side semiconductor layer formed on an upper surface of the substrate, an active layer formed on an area except a part of an area on an upper surface of the n-side semiconductor layer, and the active layer Three or more light emitting cells having a p-side semiconductor layer formed on an upper surface of the light source; a light reflective electrode formed on an upper surface of a p-side semiconductor layer in each of the three or more light emitting cells; Each cell has a first p-side opening formed above the light reflective electrode and a first n-side opening formed above a portion of the region on the upper surface of the n-side semiconductor layer. A first wiring electrode formed on the first insulating film, an upper surface of the first insulating film, and connected to the n-side semiconductor layer of the first light emitting cell and the first n-side opening; A plurality of wiring electrodes including a light reflective electrode and a second wiring electrode connected to the first p-side opening, and formed on an upper surface of the first insulating film, wherein the light reflective electrode and the first electrode of the first light emitting cell A first electrode connected at the 1 p side opening, a second electrode formed at an upper surface of the first insulating film, and connected to the n side semiconductor layer of the second light emitting cell and the first n side opening; A second insulating film having a second p-side opening formed above the first electrode, a second n-side opening formed above the second electrode, and a third opening formed above at least one of the plurality of wiring electrodes; , The second p side In the bend and having a second external connecting portion connected to the second electrode in a first external connecting portion and said second n-side opening connected to the first electrode.

By setting it as the above structure, even if the light emitting element in which the some light emitting cell was electrically connected by the wiring electrode can confirm the electrical characteristic in each of the some light emitting cell, it can provide the light emitting element which is excellent in reliability.

FIG. 1: is a top view which shows typically the structure of the light emitting element which concerns on Embodiment 1. FIG.
FIG. 2A is a cross-sectional view schematically showing the configuration of a light emitting element according to Embodiment 1, showing a cross section taken along the line IIA-IIA in FIG. 1.
FIG. 2B is a cross-sectional view schematically showing the configuration of a light emitting element according to Embodiment 1, showing a cross section taken along the line IIB-IIB in FIG.
3 is a perspective view schematically showing the configuration of a light emitting device according to Embodiment 1. FIG.
4 is a cross-sectional view schematically showing the configuration of a light emitting device according to Embodiment 1, showing a cross section taken along the line IV-IV of FIG.
FIG. 5 is a top view schematically showing the configuration of a light emitting element according to Embodiment 2. FIG.
FIG. 6A is a cross-sectional view schematically showing the configuration of a light emitting device according to Embodiment 2, showing a cross section taken along line VIA-VIA in FIG. 5.
FIG. 6B is a cross-sectional view schematically showing the configuration of the light emitting device according to the second embodiment, showing a cross section taken along the line VIB-VIB in FIG. 5.
7 is a top view schematically showing the configuration of a light emitting element according to the third embodiment.
FIG. 8: A is sectional drawing which shows typically the structure of the light emitting element which concerns on Embodiment 3, and shows the cross section in the VIIA-VIIA line of FIG.
FIG. 8B is a cross-sectional view schematically showing the configuration of the light emitting element according to the third embodiment, showing a cross section taken along the line VII-B of FIG. 7.
9 is a top view schematically illustrating the configuration of a light emitting element according to the fourth embodiment.
FIG. 10A is a cross-sectional view schematically illustrating the configuration of a light emitting element according to Embodiment 4, and shows a cross section taken along the line VII-A of FIG. 9.
FIG. 10B is a cross-sectional view schematically showing the configuration of a light emitting element according to Embodiment 4, showing a cross section taken along the line BB-B of FIG. 9.

FIG. 1: is a top view which shows typically the structure of the light emitting element 1A which concerns on Embodiment 1. FIG. FIG. 2A is a cross-sectional view of the light emitting element 1A and shows a cross section taken along the line IIA-IIA in FIG. 1. FIG. 2B is a cross-sectional view of the light emitting element 1A and shows a cross section taken along the line IIB-IIB in FIG. 1. 3 is a perspective view schematically showing a light emitting device 100 including a light emitting element 1A. 4 is a cross-sectional view of the light emitting device 100 and shows a cross section taken along the line IV-IV of FIG. 3. FIG. 5: is a top view which shows typically the structure of the light emitting element 1B which concerns on Embodiment 2. FIG. FIG. 6A is a cross-sectional view of the light emitting element 1B, and shows a cross section taken along the line VIA-VIA in FIG. 5. FIG. 6B is a cross-sectional view of the light emitting element 1B and shows a cross section taken along the line VIB-VIB in FIG. 5. FIG. 7: is a top view which shows typically the structure of the light emitting element 2A which concerns on Embodiment 3. FIG. FIG. 8A is a cross-sectional view of the light emitting element 2A, illustrating a cross section taken along the line VII-A of FIG. 7. FIG. 8B is a cross-sectional view of the light emitting element 2A, and shows a cross section taken along the line BB-B of FIG. 7. 9 is a top view schematically showing the configuration of a light emitting element 2B according to the fourth embodiment. FIG. 10A is a cross-sectional view of the light emitting element 2B, and shows a cross section taken along the line VII-A of FIG. 9. FIG. 10B is a cross-sectional view of the light emitting element 2B, and shows a cross section taken along the line XB-XB of FIG. 9.

In addition, since the figure referred to in the following description schematically shows embodiment, the scale, space | interval, positional relationship, etc. of each member may be exaggerated, or the illustration of a part of member may be abbreviate | omitted. Moreover, in a top view and its sectional drawing, the scale and the space | interval of each member may not correspond. In addition, in the following description, about the same name and code | symbol, the same or same member is shown in principle, and detailed description is abbreviate | omitted suitably.

<Embodiment 1>

The light emitting element 1A is provided with the following structures, as shown to FIG. 1, 2A, and 2B.

The light emitting element 1A is a region excluding an insulating substrate 11, an n-side semiconductor layer 12n formed on the upper surface of the substrate 11, and a part of the region on the upper surface of the n-side semiconductor layer 12n. And first and second light emitting cells 121 and 122 each having an active layer 12a formed on the upper surface and a p-side semiconductor layer 12p formed on the upper surface of the active layer 12a. The light reflective electrode 13 formed on the upper surface of the p-side semiconductor layer 12p and the first and second light emitting cells 121 and 122 in the first and second light emitting cells 121 and 122, respectively. Covering the upper surface of the first p-side opening 17p formed above the light reflective electrode 13 and the n-side semiconductor layer 12n with respect to each of the first and second light emitting cells 121 and 122. The first insulating film 17 having the first n-side opening 17n formed above the partial region and the n-side semiconductor layer of the first light emitting cell 121 while being formed on the upper surface of the first insulating film 17. A wiring electrode 14 connected to the 12n and the first n-side opening 17n and connected to the light reflective electrode 13 of the second light emitting cell 122 and the first p-side opening 17p; The first electrode 15 formed on the upper surface of the first insulating film 17 and connected to the light reflective electrode 13 of the first light emitting cell 121 and the first p-side opening 17p, and the first insulating film ( 17) on the top While being formed, it further has the 2nd electrode 16 connected by the n-side semiconductor layer 12n of the 2nd light emitting cell 122, and the 1st n-side opening part 17n. The second p-side opening 18p formed above the first electrode 15, the second n-side opening 18n formed above the second electrode 16, and the wiring electrode 14 are disposed above the wiring electrode 14. The second insulating film 18 having the third opening 18e formed, the first external connecting portion 19p connected to the first electrode 15 at the second p-side opening 18p, and the second n-side opening ( It has the 2nd external connection part 19n connected to the 2nd electrode 16 in 18n.

Thereby, even if the 1st light emitting cell 121 and the 2nd light emitting cell 122 formed in the upper surface of the board | substrate 11 were connected by the wiring electrode 14, the 1st light emitting cell 121 and the 2nd light emission The electrical characteristics in each of the cells 122 can be confirmed. This point will be described in detail below.

In a light emitting element in which two light emitting cells are connected by a wiring electrode, the light is emitted by applying a voltage between a first external connection electrically connected to one light emitting cell and a second external connection electrically connected to the other light emitting cell. The electrical characteristics of the device can be checked. However, since the electrical properties which can be confirmed are those in which two light emitting cells are connected in series, it is difficult to confirm the electric properties of each of the two light emitting cells. Therefore, even if a problem arises in one light emitting cell among two light emitting cells, the problem may not be detected, and there exists a possibility that the reliability of a light emitting element may fall. In particular, regarding the small leakage current of the light emitting cell that does not cause variation in the electrical characteristics with respect to the forward voltage or the reverse voltage, for example, when one light emitting cell is normal, the two light emitting cells connected in series Even if the current value is measured, detection is difficult. Such leakage current becomes a factor leading to the fatal reliability falloff when the light emitting element is operated. In addition, when detecting a leak current by the electrical characteristics of the forward voltage or the reverse voltage of the whole light emitting element in which several light emitting cells were connected in series, it is abnormal from the value of the voltage drop which includes the electrical characteristics of each light emitting cell. There is a way to detect this. However, there is a deviation in the electrical characteristics of each light emitting cell, such as a little larger or a little smaller than the reference value judged to be normal, and the minute leakage current is difficult to detect due to the deviation. This tendency becomes larger as the number of light-emitting cells connected in series increases, and the detection of minute leakage current becomes more difficult.

So, in this embodiment, as shown to FIG. 1, 2A, and 2B, the 2nd p side opening part for connecting the 1st external connection part 19p with the 1st electrode 15 to the 2nd insulating film 18 A third opening 18e is formed above the wiring electrode 14 in addition to the second n-side opening 18n for connecting the 18p and the second external connecting portion 19n with the second electrode 16. have. Thereby, the electrical characteristic of the 1st light emitting cell 121 can be confirmed by applying a voltage between the 1st external connection part 19p and the wiring electrode 14 in the 3rd opening part 18e. Similarly, the electrical characteristic of the 2nd light emitting cell 122 can be confirmed by applying a voltage between the 2nd external connection part 19n and the wiring electrode 14 in the 3rd opening part 18e. Thus, according to the light emitting element 1A which concerns on this embodiment, the electrical characteristics in each of the 1st light emitting cell 121 and the 2nd light emitting cell 122 can be confirmed. As a result, since the presence or absence of the problem in each light emitting cell 12 can be confirmed correctly, the reliability of a light emitting element can be improved.

Hereinafter, the light emitting element 1A according to the first embodiment will be described in detail.

As shown in FIG. 1, the light emitting element 1A has an insulating substrate 11, an n-side semiconductor layer 12n formed on an upper surface of the substrate 11, and an upper surface of the n-side semiconductor layer 12n. And a first light emitting cell 121 and a second light emitting cell 122 each having an active layer 12a formed in a part of the region, and a p-side semiconductor layer 12p formed on an upper surface of the active layer 12a. In this embodiment, it has the 1st light emitting cell 121 and the 2nd light emitting cell 122 divided by the groove part 12d. Each light emitting cell 121, 122 has a LED structure, respectively. In addition, the first light emitting cell 121 and the second light emitting cell 122 are connected in series by the wiring electrode 14 or the like.

When the first light emitting cell 121 and the second light emitting cell 122 are connected in series, the first light emitting cell 121 includes the light reflective electrode 13, the first electrode 15, and the first external connection portion. It is connected to (19p). Moreover, the 2nd light emitting cell 122 is connected with the 2nd electrode 16 and the 2nd external connection part 19n.

The light emitting element 1A is configured such that the first light emitting cell 121 and the second light emitting cell 122 emit light by connecting a power source to the first external connecting portion 19p and the second external connecting portion 19n. Moreover, the light reflective electrode 13 and the wiring electrode 14 are formed in the upper surface side of the p-side semiconductor layer 12p, and the lower surface side of the light emitting element 1A, for example from the lower surface of the board | substrate 11, Light is mainly taken out. In the light emitting element 1A, the first external connection portion 19p and the second external connection portion 19n are formed on the upper surface side of the light emitting element 1A, and have a structure suitable for flip chip mounting.

(Board)

The board | substrate 11 is equipped with insulation and supports several light emitting cells 12. As shown in FIG. In addition, the substrate 11 may be a growth substrate for epitaxially growing a semiconductor layer. As the substrate 11, for example, when a nitride semiconductor is used for a semiconductor structure, a sapphire (Al ₂ O ₃ ) substrate can be used.

A plurality of convex portions may be formed on the upper surface of the substrate 11. Since the plurality of convex portions can scatter or diffract light from the light emitting cells 12 to an angle that can be easily extracted from the light emitting element, the light extraction efficiency can be improved. The height of the convex portion can be, for example, about 5 nm or more. Moreover, it is preferable to make height of a convex part lower than the total film thickness of the semiconductor laminated structure formed in the upper surface of the board | substrate 11. The shape as seen from the upper surface of the convex portion is not particularly limited. For example, the shape seen from the upper surface of the convex part can be circular, triangular, or square.

The shape seen from the upper surface of the board | substrate 11 can be made into square shape and square shape, for example. In this embodiment, the board | substrate 11 is substantially square shape. The length of one side of the substrate 11 may be about 300 µm or more and about 3000 µm or less, preferably about 500 µm or more and about 1500 µm or less.

(Light emitting cell)

The light emitting cell 12 has a semiconductor laminated structure in which an n-side semiconductor layer 12n, an active layer 12a, and a p-side semiconductor layer 12p are stacked in this order from the upper surface side of the substrate 11. The active layer 12a is formed in the region except a part of the region on the upper surface of the n-side semiconductor layer 12n. The p-side semiconductor layer 12p is formed on the upper surface of the active layer 12a. Therefore, the active layer 12a and the p-side semiconductor layer 12p are not formed in a part of the upper surface of the n-side semiconductor layer 12n.

As shown in FIG. 1, 2A, in the 1st light emitting cell 121 and the 2nd light emitting cell 122 formed in the upper surface of the board | substrate 11, the groove part 12d by which the upper surface of the board | substrate 11 is exposed is exposed. It is divided by. Although the 1st light emitting cell 121 and the 2nd light emitting cell 122 are connected in series by the wiring electrode 14, except for the connection by the wiring electrode 14, they are electrically independent of each other.

In each of the first light emitting cell 121 and the second light emitting cell 122, the p-side semiconductor layer 12p and the active layer 12a are not partially present, so that the upper surface of the n-side semiconductor layer 12n is exposed. Phosphorous first exposed portion 12b is formed. The 1st exposed part 12b is the area | region in which the step part by the upper surface of the p-side semiconductor layer 12p and the upper surface of the n-side semiconductor layer 12n is formed in the light emitting cell 12. As shown in FIG. When viewed from the top, the first exposed portion 12b is disposed adjacent to the outer edge of the p-side semiconductor layer 12p. In the present embodiment, six first exposed portions 12b are formed in each of the first light emitting cell 121 and the second light emitting cell 122.

In each of the first light emitting cell 121 and the second light emitting cell 122, an n-side semiconductor layer 12n is exposed from the p-side semiconductor layer 12p and the active layer 12a along the outer periphery of the substrate 11. The 2nd exposed part 12c which is the made area | region is formed.

As shown in FIG. 1, when viewed from the top, each of the active layers 12a of the first light emitting cell 121 and the second light emitting cell 122 is preferably substantially the same shape. Since the shape of the active layer 12a is the same, the luminance from each light emitting cell tends to be the same, and the luminance nonuniformity of the light emitting element can be reduced.

The n-side semiconductor layer 12n, the active layer 12a, and the p-side semiconductor layer 12p are nitride semiconductors such as In _X Al _Y Ga _1-XY N (0 ≦ X, 0 ≦ Y, X + Y <1). Can be used. The peak wavelength of the light emitted by the active layer 12a is, for example, in a range of 360 nm to 650 nm.

(Light reflective electrode)

The light reflective electrode 13 receives a current supplied from the first electrode 15, the second electrode 16, and the wiring electrode 14 so as to flow a current in a wide region of the p-side semiconductor layer 12p. In addition to functioning as a current diffusion layer to diffuse, it also functions as a light reflecting layer. The light reflective electrode 13 is formed in substantially the whole area | region of the upper surface of the p side semiconductor layer 12p in each of the 1st light emitting cell 121 and the 2nd light emitting cell 122. As shown in FIG.

It is preferable that the light reflective electrode 13 has a metal layer which consists of a metal material which has favorable electroconductivity and light reflectivity. As such a metal material, the alloy which has Ag, Al, or any metal of these as a main component can be used, for example. In addition, the light reflective electrode 13 may have a laminated structure in which a plurality of metal layers are laminated. For example, a light reflecting layer using a material having good light reflectivity such as Ag or an alloy thereof may be formed on the lower layer side, and a barrier layer for reducing migration of the metal material used for the light reflecting layer may be formed on the upper layer side. It is preferable to form a barrier layer so that the light reflective electrode 13 may be covered. In the barrier layer, preferably formed in the insulating member, for example, it can be used a SiN or SiO _2.

(First insulating film)

As shown in FIGS. 2A and 2B, the first insulating film 17 continuously covers the first light emitting cell 121 and the second light emitting cell 122. The first insulating film 17 has a first p-side opening 17p and an n-side semiconductor formed above the light reflective electrode 13 in each of the first light emitting cell 121 and the second light emitting cell 122. It has the 1st n side opening part 17n formed above the one part area | region in the upper surface of the layer 12n. In the present embodiment, the first n-side opening 17n is formed for each of the six first exposed portions 12b formed in each of the light emitting cells 12. The 1st n-side opening part 17n is formed in the outer side of the p-side semiconductor layer 12p of the 1st light emitting cell 121 and the 2nd light emitting cell 122 when viewed from the upper surface. And the 1st external connection part 19p is formed inside p side semiconductor layer 12p of the 1st light emitting cell 121, and the 2nd external connection part 19n is p of the 2nd light emitting cell 122 It is formed inside the side semiconductor layer 12p. Thereby, when forming the external connection part 19, it can form in the comparatively large area | region above the light emitting cell 12, without covering the 1st n-side opening part 17n. When the external connection portion 19 is formed to cover the first n-side opening 17n, the second electrode 16 or the first insulating film 17 in the first n-side opening 17n due to thermal stress during mounting or the like. May cause problems such as peeling off. However, according to this embodiment, since the external connection part 19 can be formed in a wide range, reducing occurrence of said problem, mounting property can be improved, maintaining reliability.

As the first insulating film 17, an oxide or nitride containing at least one selected from the group consisting of Si, Ti, Zr, Nb, Ta, Al, and Hf can be used, for example. Among these, it is preferable to use SiO ₂ which has high light transmittance to visible light and low refractive index. By using a material having a lower refractive index than that of the semiconductor structure or the substrate 11 and having a larger refractive index difference from the semiconductor structure or the substrate 11, light can be efficiently reflected at the interface between these members and the first insulating film 17. . By increasing the light reflectance at such an interface, it is possible to reduce the leakage light from the upper surface side of the light emitting element 1A, that is, from the side opposite to the light extraction surface.

(Wiring electrode)

As shown in FIGS. 1, 2A, and 2B, the wiring electrode 14 is formed on the upper surface of the first insulating film 17 and is used for connecting the first light emitting cell 121 and the second light emitting cell 122. will be. The wiring electrode 14 is connected to the n-side semiconductor layer 12n of the first light emitting cell 121 and the first n-side opening 17n, and the light reflective electrode 13 of the second light emitting cell 122 is connected to the wiring electrode 14. It is connected by the 1st p side opening part 17p. The wiring electrode 14 is electrically connected to the p-side semiconductor layer 12p via the light reflective electrode 13 in the first p-side opening 17p formed on the upper surface of the light reflective electrode 13. The wiring electrode 14 is formed so as to continuously cover the upper surface, the side surface, and the area therebetween of the first light emitting cell 121 and the second light emitting cell 122.

It is preferable that the wiring electrode 14 has a metal layer made of a metal material having good conductivity and light reflectivity. As such a metal material, Ag, Al, or an alloy of these metals can be used. Al or Al alloy is preferable as the wiring electrode 14 because the light reflectivity is high and migration is less likely to occur than Ag.

(1st electrode, 2nd electrode)

The first electrode 15 is formed on the upper surface of the first insulating film 17 and is connected to the light reflective electrode 13 of the first light emitting cell 121 through the first p-side opening 17p. The second electrode 16 is formed on the upper surface of the first insulating film 17 and is connected to the n-side semiconductor layer 12n and the first n-side opening 17n of the second light emitting cell. The 2nd p side opening part 18p of the 2nd insulating film 18 mentioned later is formed above the 1st electrode 15, and the 2nd p insulating film 18 mentioned later above the 2nd electrode 16 is formed. The second n-side opening 18n is formed.

It is preferable that the 1st electrode 15 and the 2nd electrode 16 have the metal layer which consists of metal materials with favorable electroconductivity and light reflectivity. As such a metal material, the same metal material as the above-mentioned wiring electrode 14 can be used.

(Second insulating film)

As shown in FIGS. 1, 2A, and 2B, the second insulating film 18 is substantially the surface of the first electrode 15, the second electrode 16, the wiring electrode 14, and the first insulating film 17. The entire area is continuously covered. The second insulating film 18 includes a second p-side opening 18p formed above the first electrode 15, a second n-side opening 18n formed above the second electrode 16, and a wiring electrode. It has the 3rd opening part 18e formed above 14. In this embodiment, one 2nd p side opening part 18p and one 2nd n side opening part 18n are formed in the 2nd insulating film 18, respectively. In addition, the arrangement | positioning number and shape of 2nd p side opening part 18p and 2nd n side opening part 18n are not specifically limited.

As shown in FIG. 1, the third opening 18e is formed in a region where the first light emitting cell 121 and the second light emitting cell 122 are not formed. This prevents the light from the respective light emitting cells 12 from being compared with the case where the third openings 18e are formed in the regions where the first light emitting cells 121 and the second light emitting cells 122 are formed. Can be reduced. Moreover, the situation where distance with the external connection part mentioned later becomes too close can be avoided, and it becomes difficult to electrically connect 3rd opening part 18e and an external connection part. In the present embodiment, the third opening 18e is located above the wiring electrode 14 formed on the semiconductor layer separated from the first light emitting cell 121 and the second light emitting cell 122 by the groove portion 12d. Formed. Thereby, for example, when the some convex part is formed in the upper surface of the board | substrate 11 as mentioned above, the wiring electrode 14 can be formed in a desired shape, without disconnection by a convex part. For example, when the convex part is not formed on the board | substrate 11, the wiring electrode 14 is formed above the area | region where the upper surface of the board | substrate 11 was exposed, without forming a semiconductor layer, The third opening 18e may be formed above the wiring electrode 14.

As shown to FIG. 1, 2A, the 3rd opening part 18e is formed in the area | region which the 1st external connection part 19p and the 2nd external connection part 19n oppose. Thereby, it is easy to make the distance of the 3rd opening part 18e and the 1st external connection part 19p, and the distance of the 3rd opening 18e and the 2nd external connection part 19n the same distance. Therefore, the measurement between the 3rd opening part 18e and the 1st external connection part 19p and the measurement between the 3rd opening part 18e and the 2nd external connection part 19n can be performed easily. .

The second insulating film 18 also functions as a protective film protecting the first electrode 15, the second electrode 16, and the wiring electrode 14. As the second insulating film 18, the same material as the above-described first insulating film 17 can be used. In addition, different materials may be used for the first insulating film 17 and the second insulating film 18.

(External connection)

As shown to FIG. 1, 2A, 2B, the 1st external connection part 19p is formed in the upper surface of the 2nd insulating film 18, and is connected to the 1st electrode 15 in the 2nd p side opening part 18p. have. Moreover, the 2nd external connection part 19n is formed in the upper surface of the 2nd insulating film 18, and is connected to the 2nd electrode 16 in the 2nd n side opening part 18n. The 1st external connection part 19p and the 2nd external connection part 19n are formed in order to connect with the exterior, for example, are electrically connected with the electrically conductive part 24 of the base body 23 mentioned later.

The 5th external connection part 19e connected with the wiring electrode 14 is formed in the 3rd opening part 18e. Thereby, the deviation of the height of the 1st external connection part 19p and the 2nd external connection part 19n, and the height of the 5th external connection part 19e becomes small. As a result, when measuring an electrical property using a probe needle etc., since it becomes easy to contact a probe needle with these external connection parts 19, a measurement can be performed easily. In addition, the 5th external connection part 19e is not a member formed in order to electrically connect with the electrically-conductive part 24 of the base 23 like the 1st external connection part 19p and the 2nd external connection part 19n, It is a member for measurement which makes a probe needle etc. contact when measuring the electrical characteristic of the light emitting cell 12. It is preferable to make the magnitude | size in the upper surface of the 5th external connection part 19e smaller than the size of the 1st external connection part 19p and the 2nd external connection part 19n. Thereby, while being able to play a role as a member for a measurement, the area | region in which the 1st external connection part 19p and the 2nd external connection part 19n are formed can be made larger, and mountability and heat dissipation can be improved. have.

As shown in FIG. 1, each of the 1st external connection part 19p and the 2nd external connection part 19n has substantially the same shape as seen from an upper surface. By setting it as such a shape, it is possible to reduce the deflection of the force generated at the time of mounting to the 1st external connection part 19p side or the 2nd external connection part 19n side, and to improve mounting precision.

As shown in FIG. 1, in the shape seen from the upper surface of the first external connecting portion 19p, the portion facing the region where the fifth external connecting portion 19e is disposed is arranged by the fifth external connecting portion 19e. It is in the shape of a recess toward the opposite side of the region. In addition, similarly to the shape when viewed from the upper surface of the second external connecting portion 19n, a portion facing the region where the fifth external connecting portion 19e is disposed is a region where the fifth external connecting portion 19e is disposed. It is in the shape of a recess toward the opposite side of. By setting it as such a shape, the distance of each of the 5th external connection part 19e, the 1st external connection part 19p, and the 2nd external connection part 19n can be made relatively large. Therefore, the 5th external connection part 19e and the 1st external connection part 19p, and the 5th external connection part 19e and the 2nd external connection part 19n are electrically connected by joining members, such as soldering material, used at the time of mounting. It can suppress the state of conduction.

In this embodiment, the 1st external connection part 19p and the 2nd external connection part 19n are formed by the plating method. In this case, the 1st external connection part 19p and the 2nd external connection part 19n are the seed layer 20 which is a metal layer electrically connected with the 1st electrode 15 or the 2nd electrode 16, and the seed layer ( It consists of the plating layer 21 laminated | stacked and formed on the upper surface of 20. The seed layer 20 is a metal layer serving as a current path when the plating layer 21 is formed by an electrolytic plating method, and can be formed by a sputtering method, a vapor deposition method, or the like.

It is preferable that the seed layer 20 has a metal layer made of a metal material having good conductivity and light reflectivity. As such a metal material, Al, Ag, Al alloy, and Ag alloy are mentioned. In addition, it is preferable that the seed layer 20 is formed so that the metal layer which consists of said Al, Ag, Al alloy, or Ag alloy may contact with the 2nd insulating film 18. Thereby, the light toward the base 23 side from the semiconductor structure can be efficiently reflected to the light extraction surface side of the light emitting element 1A.

Metal such as Cu, Au, or Ni can be used for the plating layer 21. In addition, the plating layer 21 may be a laminated structure using a plurality of kinds of metals. In order that the external connection part 19 may improve the adhesiveness with the base body 23 using the Au alloy type adhesion member, such as corrosion prevention and Au-Sn process solder, it is preferable to form at least an uppermost layer from Au.

On the lower surface of the substrate 11, a reflective film for reflecting light from the active layer 12a can be formed. As the reflective film, a metal film having a high reflectance with respect to light from the active layer 12a, or a dielectric multilayer film in which a plurality of dielectric layers are laminated can be used. As the dielectric multilayer film, it is preferable that the film thickness of the dielectric layer is appropriately set so that the light from the active layer 12a is reflected. By forming such a reflective film, light is not easily taken out from the lower surface side of the substrate 11, and mainly light is taken out from the side surface of the substrate 11. It can use suitably, for example, when taking out light.

Next, the light emitting device 100 including the light emitting element 1A will be described with reference to FIGS. 3 and 4. FIG. 3 is a perspective view showing the configuration of the light emitting device 100, and FIG. 4 is a sectional view taken along the line IV-IV of FIG.

(Gas, challenge)

As shown in FIG. 4, the base 23 and the conductive portion 24 are integrally formed, and the light emitting element 1A is connected to the conductive portion 24 to be conductive. In the present embodiment, two conductive portions 24 are formed in the base 23, and each of the first external connecting portion 19p and the second external connecting portion 19n is joined to the conductive portion 24. The light emitting element 1A can be used as the light emitting device 100 by bonding to the base 23. Moreover, in the side surface of the electroconductive part 24, the side surface on the opposite side to the side to which the light emitting element 1A is joined in FIG. 4 is mounted in a mounting board etc.

Joining members, such as Au-Sn type | system | group and Ag-Sn type | system | group solder, can be used for joining the external connection part 19 and the electroconductive part 24, for example.

As the base 23, a thermosetting resin or a thermoplastic resin can be used. Specifically, an epoxy resin, a silicone resin, or the like can be used. In addition, the base 23 may contain a light reflective substance. Titanium oxide, silicon oxide, zirconium oxide, etc. can be used as a light reflective material.

As the conductive portion 24, for example, Cu having a good heat dissipation property or a metal material containing Cu as a main component can be used. In addition, a metal layer may be formed on the surface of the conductive portion 24. For example, a metal layer made of a metal material such as Ag or Al can be formed on the outermost surface of the conductive portion 24.

(Light reflection member)

The light reflective member 25 is formed so that the part except the upper surface of the light emitting element 1A may be covered, as shown in FIG. The light reflective member 25 is formed in order to reflect the light leaked toward the base 23 side toward the light extraction surface side of the light emitting element 1A. As the light reflective member 25, it is preferable to use the same member as the above-described base 23, and for example, a resin containing a light reflective material can be used.

(Bag member)

The sealing member 26 is formed so that the light extraction surface side of 1 A of light emitting elements may be covered, as shown to FIG. 3,4. The sealing member 26 has the function of protecting the light emitting element 1A from external force, dust, moisture, and the like, and improving the heat resistance, weather resistance, and light resistance of the light emitting element 1A. It is preferable to use the same member as the above-mentioned base body 23 for the sealing member 26.

As mentioned above, although the light emitting element 1A was demonstrated, the shape when it sees from the upper surface of the light emitting cell 12 is not specifically limited, Polygons, such as a square and a hexagon, circular, an ellipse, etc. may be sufficient. The number of light emitting cells 12 is not limited to two, but may be two or more. In addition, the plurality of light emitting cells 12 are not limited to all connected in series, one or more two or more serial connections may be included, and parallel connection may be included.

<Embodiment 2>

EMBODIMENT OF THE INVENTION The light emitting element 1B which concerns on Embodiment 2 of this invention is demonstrated with reference to FIG. 5, 6A, 6B. Below, the same code | symbol is attached | subjected to the member corresponding to Embodiment 1.

The light emitting element 1B mainly differs from Embodiment 1 in that the 3rd opening part 18e is located on the n-side semiconductor layer 12n continuous from the 2nd light emitting cell 122. Thereby, compared with Embodiment 1, a part of wiring electrode 14 can be formed on the area | region in which the groove part 12d is not arrange | positioned. In the case where the wiring electrode 14 is formed to cover the groove portion 12d, the step difference is large, and disconnection of the wiring electrode 14 tends to occur, which causes deterioration of reliability. However, in this embodiment, since the area | region of the wiring electrode 14 formed in the groove part 12d can be further reduced, the above-mentioned deterioration of reliability can be reduced. In addition, in this embodiment, although the 3rd opening part 18e was arrange | positioned on the n side semiconductor layer 12n continuous from the 2nd light emitting cell 122, the n side semiconductor layer continuous from the 1st light emitting cell 121 You may arrange on (12n).

Also in the light emitting element 1B, the same effect as the light emitting element 1A can be exhibited. It is needless to say that the light emitting element 1B can be used as the light emitting device 100 by being bonded to the base 23 similarly to the light emitting element 1A.

<Embodiment 3>

The light emitting element 2A according to Embodiment 3 of the present invention will be described with reference to FIGS. 7, 8A, and 8B. Below, the same code | symbol is attached | subjected to the member corresponding to Embodiment 1. In addition, description is abbreviate | omitted suitably about the structure similar to Embodiment 1. FIG.

The light emitting element 2A is provided with the following structures, as shown to FIG. 7, 8A, 8B.

As three or more light emitting cells 121-124 connected in series with the insulative board | substrate 11, three or more light emitting cells 121-124 are in series with the 1st light emitting cell 121 located in the one end of a series circuit. In addition to the second light emitting cell 122 located at the other end of the circuit, each of the n-side semiconductor layer 12n formed on the upper surface of the substrate 11 and the upper surface of the n-side semiconductor layer 12n 3 or more light emitting cells 121-124 which have the active layer 12a formed in the area | region except a part of area | region, and the p side semiconductor layer formed in the upper surface of the active layer 12a. And three or more light emitting cells covering the light reflective electrode 13 formed on the upper surface of the p-side semiconductor layer 12p and the three or more light emitting cells 121 to 124 in each of the three or more light emitting cells 121 to 124. The first p-side opening 17p formed above the light reflective electrode 13 and the first portion formed above a part of the region on the upper surface of the n-side semiconductor layer 12n with respect to each of the 121-124. The first insulating film 17 having the n-side opening 17n and the upper surface of the first insulating film 17 are formed, and the n-side semiconductor layer 12n and the first n-side opening of the first light emitting cell 121 are formed. A first wiring electrode 141 connected at 17n, a light reflective electrode 13 of second light emitting cell 122, and a second wiring electrode 142 connected at first p-side opening 17p. The plurality of wiring electrodes 141 to 143 and the upper surface of the first insulating film 17 are formed, and the light reflective electrode 13 and the first p side of the first light emitting cell 121 are opened. The n-side semiconductor layer 12n and the first n-side opening part of the second light emitting cell 122 are formed on the first electrode 15 and the first insulating film 17 connected at the part 17p. It has the 2nd electrode 16 connected in 17n) further. And the 2nd p side opening part 18p formed above the 1st electrode 15, the 2nd n side opening part 18n formed above the 2nd electrode 16, and some wiring electrode 141-143 ), A second insulating film 18 having a third opening 18e formed above at least one of them, a first external connecting portion 19p connected to the first electrode 15 at the second p-side opening 18p, and And the second external connecting portion 19n connected to the second electrode 16 at the second n-side opening part 18n.

In the present embodiment, the first to fourth light emitting cells 121 to 124 are formed in two rows and two columns on the upper surface of the substrate 11 having a substantially square shape when viewed from the top, and the first to fourth light emission. It is mainly different from Embodiment 1 that the cells 121-124 are connected by the some wiring electrode 141-143. The first wiring electrode 141 is connected to the n-side semiconductor layer 12n of the first light emitting cell 121 and the first n-side opening 17n, and has a light reflectivity formed on the upper surface of the third light emitting cell 123. It is connected with the electrode 13 in the 1st p side opening part 17p. The second wiring electrode 142 is connected to the n-side semiconductor layer 12n of the fourth light emitting cell 124 and the first n-side opening 17n, and has a light reflectivity formed on the upper surface of the second light emitting cell 122. It is connected with the electrode 13 in the 1st p side opening part 17p. The third wiring electrode 143 is connected to the n-side semiconductor layer 12n of the third light emitting cell 123 and the first n-side opening 17n and is formed on the upper surface of the fourth light emitting cell 124. It is connected with the electrode 13 in the 1st p side opening part 17p. In this way, the first to fourth light emitting cells 121 to 124 are connected in series by the first to third wiring electrodes 141 to 143.

Six first exposed portions 12b are formed in each of the first to fourth light emitting cells 121 to 124. And the 1st n side opening part 17n is formed in the area | region in which the 1st exposed part 12b is formed, respectively. The 1st n-side opening part 17n is formed outside the p-side semiconductor layer 12p of the 1st-4th light emitting cells 121-124. The first external connection portion 19p is formed inside the p-side semiconductor layer 12p of the first light emitting cell 121. The second external connection portion 19n is formed inside the p-side semiconductor layer 12p of the second light emitting cell 122. The third external connection portion 19c is formed inside the p-side semiconductor layer 12p of the third light emitting cell 123. The fourth external connection portion 19d is formed inside the p-side semiconductor layer 12p of the fourth light emitting cell 124.

The light emitting element 2A has a third external connecting portion 19c, a fourth external connecting portion 19d, and a fifth in addition to the first external connecting portion 19p and the second external connecting portion 19n described in the first and second embodiments. It has an external connection part 19e. The third external connection portion 19c is connected to the first wiring electrode 141 at the third p-side opening portion 18c formed above the light reflective electrode 13 of the third light emitting cell 123. The fourth external connection portion 19d is connected to the third wiring electrode 143 at the fourth p-side opening portion 18d formed above the light reflective electrode 13 of the fourth light emitting cell 124. The fifth external connecting portion 19e is connected to the second wiring electrode 142 at the third opening portion 18e. By forming such external connection portion 19 in each of the first to fourth light emitting cells 121 to 124, the electrical characteristics of each of the first to fourth light emitting cells 121 to 124 can be confirmed. Specifically, the electrical characteristics of the first light emitting cell 121 can be confirmed by applying a voltage between the first external connecting portion 19p and the third external connecting portion 19c. The electrical characteristics of the third light emitting cell 123 can be confirmed by applying a voltage between the third external connecting portion 19c and the fourth external connecting portion 19d. The electrical characteristics of the fourth light emitting cell 124 can be confirmed by applying a voltage between the fourth external connecting portion 19d and the fifth external connecting portion 19e. The electrical characteristics of the second light emitting cell 122 can be confirmed by applying a voltage between the fifth external connecting portion 19e and the second external connecting portion 19n.

The external connection portions 19 formed in each of the first to fourth light emitting cells 121 to 124 are respectively connected to the above-described conductive portion 24. Therefore, 2 A of light emitting elements can be mounted in the state which reduced the inclination with respect to the mounting surface of the mounting substrate. Moreover, it is preferable to make the height of the external connection part 19 formed in each of the 1st-4th light emitting cells 121-124 the same, and it can mount in the state which reduced the inclination with respect to the mounting surface.

As viewed from the top, the first external connecting portion 19p, the second external connecting portion 19n, the third external connecting portion 19c, and the fourth external connecting portion 19d each have substantially the same shape. By setting it as such a shape, the bias which the force which generate | occur | produces at the time of mounting to any external connection part 19 is reduced, and mounting precision can be improved.

As viewed from the top, each of the active layers included in the first to fourth light emitting cells 121 to 124 is substantially the same shape. Thereby, the brightness nonuniformity between the light emitting cells 12 can be reduced, and such nonuniformity as the whole light emitting element can be improved by arrange | positioning such 1st-4th light emitting cells 121-124 in 2 rows 2 columns. .

In this embodiment, as shown to FIG. 7, 8A, 8B, the 3rd opening part 18e is formed in the area | region in which the 1st-4th light emitting cells 121-124 are not formed. Specifically, it is formed above the second wiring electrode 142 formed on the upper surface of the semiconductor layer and is located in a region surrounded by the groove portion 12d.

The 3rd opening part 18e is located in the center area | region of the board | substrate 11 whose shape when viewed from the upper surface is substantially square. When the active layer 12a is located relatively far from the external connection portion 19 serving as the main heat dissipation path, the heat dissipation of the light emitting element may be deteriorated. In this embodiment, deterioration of heat dissipation can be reduced by arrange | positioning the 3rd opening part 18e on the semiconductor layer which does not contain the active layer 12a in a center area | region.

The 3rd opening part 18e is formed in the area | region enclosed by the 1st external connection part 19p, the 2nd external connection part 19n, the 3rd external connection part 19c, and the 4th external connection part 19d. . Thus, the fifth external connecting portion 19e formed in the third opening 18e, the first external connecting portion 19p, the second external connecting portion 19n, the third external connecting portion 19c, and the fourth external connecting portion 19d. ) It becomes easy to equalize each distance. Therefore, when confirming the electrical characteristics of the first to fourth light emitting cells 121 to 124 described above, voltage can be easily applied to the external connection portion 19, so that the time required for confirmation can be shortened. .

Also in 2 A of light emitting elements, the effect similar to 1 A of light emitting elements can be exhibited. It goes without saying that the light emitting element 2A can be used as the light emitting device 100 by being bonded to the base 23 similarly to the light emitting element 1A.

<Embodiment 4>

The light emitting element 2B according to Embodiment 4 of the present invention will be described with reference to FIGS. 9, 10A, and 10B. Below, the same code | symbol is attached | subjected to the member corresponding to Embodiment 1. In addition, description is abbreviate | omitted suitably about the structure similar to Embodiment 2, 3.

The light emitting element 2B mainly differs from Embodiment 3 in that the 3rd opening part 18e is located on the n-side semiconductor layer 12n continuous from the 2nd light emitting cell 122 similarly to Embodiment 2. Do. Thereby, compared with Embodiment 3, since a part of wiring electrode 14 can be formed in the area | region where the groove part 12d is not arrange | positioned, deterioration of reliability can be reduced. In addition, in this embodiment, although the 3rd opening part 18e was arrange | positioned on the n-side semiconductor layer 12n continuous from the 2nd light emitting cell 122, the 1st light emitting cell 121 and the 3rd light emitting cell 123 ) And the fourth light emitting cell 124 may be disposed on the n-side semiconductor layer 12n that is continuous.

Also in the light emitting element 2B, the same effect as the light emitting element 2A can be exhibited. It goes without saying that the light emitting element 2B can be used as the light emitting device 100 by being bonded to the base 23 in the same manner as the light emitting element 2A.

As mentioned above, although the light emitting element which concerns on this invention was demonstrated concretely by the form for implementing this invention, the meaning of this invention is not limited to these description and should be interpreted broadly based on description of a claim. It goes without saying that various modifications, alterations, and the like are included in the spirit of the present invention based on these descriptions.

1A, 1B, 2A, 2B: light emitting element
11: substrate
12 light emitting cell
121-124: 1st-4th light emitting cell
12n: n-side semiconductor layer
12a: active layer
12p: p side semiconductor layer
12b: first exposed portion
12c: second exposed portion
12d: groove
13: light reflective electrode
14: wiring electrode
141 to 143: first to third wiring electrodes
15: first electrode
16: second electrode
17: first insulating film
17p: first p side opening
17n: first n-side opening
18: second insulating film
18p: 2nd p side opening
18n: 2nd n side opening
18c: third p-side opening
18d: 4th p side opening
18e: third opening
19p: first external connection
19n: second external connection
19c: third external connection
19d: fourth external connection
19e: fifth external connection
20 seed layer
21: plating layer
23: gas
24: challenge part
25: light reflective member
26: sealing member
100: light emitting device

Claims (19)

An insulating substrate,
A first side each having an n-side semiconductor layer formed on the upper surface of the substrate, an active layer formed in a region other than a part of the region on the upper surface of the n-side semiconductor layer, and a p-side semiconductor layer formed on the upper surface of the active layer; A second light emitting cell,
A light reflective electrode formed on an upper surface of the p-side semiconductor layer in each of the first and second light emitting cells,
Part of the first p-side opening formed above the light reflective electrode and the upper surface of the n-side semiconductor layer, covering the first and second light emitting cells, respectively, for the first and second light emitting cells. A first insulating film having a first n-side opening formed above the region,
It is formed on the upper surface of the first insulating film, and is connected to the n-side semiconductor layer of the first light emitting cell and the first n-side opening, and the light reflective electrode and the first p-side opening of the second light emitting cell. A wiring electrode connected at
A first electrode formed on an upper surface of the first insulating film and connected to the light reflective electrode of the first light emitting cell and the first p-side opening;
A second electrode formed on an upper surface of the first insulating film and connected to the n-side semiconductor layer of the second light emitting cell and the first n-side opening;
A second insulating film having a second p-side opening formed above the first electrode, a second n-side opening formed above the second electrode, and a third opening formed above the wiring electrode;
A first external connection portion connected to the first electrode at the second p-side opening portion,
The light emitting element which has a 2nd external connection part connected to the said 2nd electrode in the said 2nd n side opening part. The method of claim 1,
The third opening is formed in a region where the first and second light emitting cells are not formed. The method of claim 1,
The said 3rd opening part is a light emitting element formed above any one of the said 1st and 2nd light emitting cell. The method according to any one of claims 1 to 3,
As viewed from the top, each of the active layers of the first and second light emitting cells has the same shape. The method according to any one of claims 1 to 4,
From the top,
The first n-side opening is formed outside the p-side semiconductor layer of the first and second light emitting cells,
The first external connection portion is formed inside the p-side semiconductor layer of the first light emitting cell,
The second external connecting portion is formed inside the p-side semiconductor layer of the second light emitting cell. The method according to any one of claims 1 to 5,
The said 3rd opening part is formed in the area | region which the said 1st external connection part and the said 2nd external connection part oppose. The method according to any one of claims 1 to 6,
The light emitting element of the said 1st external connection part and the said 2nd external connection part are the same shape as seen from an upper surface. An insulating substrate,
Three or more light emitting cells connected in series, wherein the three or more light emitting cells include a first light emitting cell positioned at one end of the series circuit and a second light emitting cell positioned at the other end of the series circuit; Three or more light emitting cells each having an n-side semiconductor layer formed on an upper surface of the substrate, an active layer formed on a region other than a portion of the upper surface of the n-side semiconductor layer, and a p-side semiconductor layer formed on an upper surface of the active layer;
A light reflective electrode formed on the upper surface of the p-side semiconductor layer in each of the three or more light emitting cells;
A first p-side opening formed above the light reflective electrode and a portion formed above a portion of the region of the n-side semiconductor layer, covering the three or more light emitting cells; A first insulating film having a 1-n side opening,
A first wiring electrode formed on an upper surface of the first insulating film and connected to the n-side semiconductor layer of the first light emitting cell and the first n-side opening, the light reflective electrode of the second light emitting cell, and the A plurality of wiring electrodes including a second wiring electrode connected at the first p-side opening portion,
A first electrode formed on an upper surface of the first insulating film and connected to the light reflective electrode of the first light emitting cell and the first p-side opening;
A second electrode formed on an upper surface of the first insulating film and connected to the n-side semiconductor layer of the second light emitting cell and the first n-side opening;
A second insulating film having a second p-side opening formed above the first electrode, a second n-side opening formed above the second electrode, and a third opening formed above at least one of the plurality of wiring electrodes and,
A first external connection portion connected to the first electrode at the second p-side opening portion,
The light emitting element which has a 2nd external connection part connected to the said 2nd electrode in the said 2nd n side opening part. The method of claim 8,
The third opening is formed in a region where the three or more light emitting cells are not formed. The method of claim 8,
The said 3rd opening part is a light emitting element formed above any said light emitting cell among the said 3 or more light emitting cells. The method according to any one of claims 8 to 10,
As viewed from the top, each of the active layers of the three or more light emitting cells is substantially the same shape. The method according to any one of claims 8 to 11,
The three or more light emitting cells are four light emitting cells formed in two rows and two columns,
The four light emitting cells are connected by the first light emitting cell, the third light emitting cell connected by the first light emitting cell and the first wiring electrode, and by the second light emitting cell and the second wiring electrode. A fourth light emitting cell and the second light emitting cell,
The second insulating film has a third p-side opening formed above the light reflective electrode of the third light emitting cell, and a fourth p-side opening formed above the light reflective electrode of the fourth light emitting cell,
The light emitting element which has a 3rd external connection part connected to the said wiring electrode in the said 3rd p side opening part, and a 4th external connection part connected to the said wiring electrode in the said 4th p side opening part. The method of claim 12,
From the top,
The first n-side opening is formed outside the p-side semiconductor layer of the three or more light emitting cells,
The first external connection portion is formed inside the p-side semiconductor layer of the first light emitting cell,
The second external connection portion is formed inside the p-side semiconductor layer of the second light emitting cell,
The third external connection portion is formed inside the p-side semiconductor layer of the third light emitting cell,
The fourth external connecting portion is formed inside the p-side semiconductor layer of the fourth light emitting cell. The method according to claim 12 or 13,
The said 3rd opening part is formed in the area | region enclosed by the said 1st external connection part, the said 2nd external connection part, the said 3rd external connection part, and the said 4th external connection part. The method according to any one of claims 12 to 14,
When viewed from the top, the light emitting element having the same shape as the first external connection portion, the second external connection portion, the third external connection portion, and the fourth external connection portion. The method according to any one of claims 1 to 15,
A light emitting element having a fifth external connection portion connected to the wiring electrode in the third opening portion. The method according to any one of claims 1 to 16,
From the top,
The substrate is rectangular in shape,
The third opening is located in the center region of the substrate. The method of claim 17,
The light emitting element in which the reflecting film which reflects the light from the said active layer is formed in the lower surface of the said board | substrate. The method of claim 18,
The reflective film is a light emitting element, which is a dielectric multilayer film having a plurality of dielectric layers stacked thereon.

Images