JP7339559B2 - light emitting element - Google Patents

Description

The present invention relates to light emitting devices.

In Patent Document 1, an insulating film having an opening covering the p-side semiconductor layer is provided on a p-side semiconductor layer provided on an n-side semiconductor layer, and an n-side electrode is provided in the opening of the insulating film. A light-emitting device in electrical communication with an n-side semiconductor layer is disclosed.

JP 2014-22608 A

In such a light-emitting element, it is desired to improve the light emission distribution while securing the area of the active layer in the light-emitting portion.

A light-emitting element according to one embodiment of the present invention includes a substrate having a rectangular top view shape, and a first light-emitting portion and a second light-emitting portion provided on the substrate, wherein the first light-emitting portion and the second light-emitting portion are provided on the substrate. Each of the light emitting portions includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and an active layer positioned between the first semiconductor layer and the second semiconductor layer. and the first semiconductor layer covering the first light emitting unit and the second light emitting unit and provided in each of the first light emitting unit and the second light emitting unit. An insulating layer including a plurality of first openings located thereabove and at least one second opening located on the second semiconductor layer, wherein in a top view, the plurality of first openings are , the insulating layer provided outside the outer edge of the second semiconductor layer, and the plurality of first openings provided on the insulating layer and provided in the first light emitting section to emit the first light. a first electrode electrically connected to the first semiconductor layer of the part, and the second semiconductor layer of the second light emitting part electrically connected to the second opening provided in the second light emitting part The connected second electrode is provided on the insulating layer, and is electrically connected to the second semiconductor layer of the first light emitting section through the second opening provided in the first light emitting section. and a third electrode electrically connected to the first semiconductor layer of the second light emitting section at the plurality of first openings provided in the second light emitting section, wherein the substrate is , an exposed portion exposed from the first light emitting portion and the second light emitting portion, and the exposed portion is provided so as to overlap a straight line passing through the center of the substrate when viewed from above.

According to the light emitting device according to one embodiment of the present invention, it is possible to provide a light emitting device in which the area of the active layer in the light emitting portion is secured and the light emission distribution is improved.

1 is a schematic top view showing a light emitting device according to a first embodiment; FIG. FIG. 2 is a schematic cross-sectional view taken along line IIA-IIA in FIG. 1; FIG. 2 is a schematic cross-sectional view taken along line IIB-IIB of FIG. 1; 1 is a schematic top view showing a light emitting device according to a first embodiment; FIG. FIG. 5 is a schematic top view showing a light emitting device according to a second embodiment; It is a schematic cross section which shows the 1st modification of the light emitting element which concerns on 2nd Embodiment. FIG. 3B is a circuit diagram of the light emitting device of FIG. 3B; FIG. 11 is a schematic cross-sectional view showing a second modified example of the light emitting device according to the second embodiment; It is a schematic top view which shows the light emitting element which concerns on 3rd Embodiment. It is a model top view which shows the light emitting element which concerns on 4th Embodiment. 1 is a schematic perspective view showing a light-emitting device using a light-emitting element according to a first embodiment; FIG. 1 is a schematic perspective view showing a light-emitting device using a light-emitting element according to a first embodiment; FIG. FIG. 6B is a schematic cross-sectional view taken along line VII-VII of FIG. 6B; 1 is a schematic perspective view showing a light-emitting device using a light-emitting element according to a first embodiment; FIG. 1 is a schematic perspective view showing a light-emitting device using a light-emitting element according to a first embodiment; FIG. FIG. 8B is a schematic cross-sectional view taken along line IX-IX of FIG. 8B; FIG. 11 is a schematic cross-sectional view showing a light-emitting device using a light-emitting element of a second modified example according to the second embodiment;

Embodiments of a light-emitting element and a light-emitting device according to the present invention will be described below.
It should be noted that the drawings referred to in the following description schematically show the present invention, and therefore the scale, spacing, positional relationship, etc. of each member are exaggerated, or illustration of a part of the member is omitted. Sometimes. Also, the scale and spacing of each member may not match between the top view and cross-sectional view. In addition, in the following description, the same names and symbols basically indicate the same or homogeneous members, and detailed description thereof will be omitted as appropriate.

<First embodiment>
The configuration of the light emitting device 10A of the first embodiment will be described with reference to FIGS. 1 and 2A to 2C. FIG. 1 is a schematic top view for explaining the details of the configuration of the light emitting element 10A. The cross-sectional view shown in FIG. 2A schematically shows a cross-section taken along line IIA-IIA of the top view shown in FIG. The cross-sectional view shown in FIG. 2B schematically shows a cross-section taken along line IIB-IIB of the top view shown in FIG. FIG. 2C is a schematic top view for explaining the details of the configuration of the light emitting element 10A.

The light-emitting element 10A includes a substrate 11 and a first light-emitting portion 12A and a second light-emitting portion 12B provided on the substrate 11 . Each of the first light emitting portion 12A and the second light emitting portion 12B includes a first conductive type first semiconductor layer 12n, a second conductive type second semiconductor layer 12p, a first semiconductor layer 12n and a second semiconductor layer. and an active layer 12a located between. The light emitting element 10A includes an insulating layer 14 covering the first light emitting section 12A and the second light emitting section 12B, a first electrode 15 electrically connected to the first semiconductor layer 12n of the first light emitting section 12A, and a second light emitting section. The second electrode 16 electrically connected to the second semiconductor layer 12p of the portion 12B is electrically connected to the second semiconductor layer 12p of the first light emitting portion 12A, and the first semiconductor layer 12p of the second light emitting portion 12B and a third electrode 17 electrically connected to layer 12n. The first electrode 15 may include a first wiring portion 151 and a first external connection portion 152 provided on the first wiring portion 151 . The second electrode 16 may include a second wiring portion 161 and a second external connection portion 162 provided on the second wiring portion 161 . By applying a voltage between the first external connection portion 152 and the second external connection portion 162, the first light emitting portion 12A and the second A current is supplied to the second light emitting portion 12B, and the active layers 12a of the first light emitting portion 12A and the second light emitting portion 12B emit light. Light emitted from the active layers 12a of the first light emitting section 12A and the second light emitting section 12B is mainly extracted from the bottom surface and side surfaces of the substrate 11 to the outside.

Substrate 11 may be any substrate material on which a semiconductor can be epitaxially grown. For the substrate 11, for example, an insulating substrate is used. In this embodiment, it is preferable to use a translucent sapphire substrate from the viewpoint of improving the light extraction efficiency of the light emitting element 10A. The top view shape of the substrate 11 is a quadrangle. The top view shape of the substrate 11 can be rectangular, for example. In this embodiment, the top view shape of the substrate 11 is a square. The length of one side of the substrate 11 is, for example, 100 μm or more and 1500 μm or less, preferably 100 μm or more and 500 μm or less.

The substrate 11 has an exposed portion 11R exposed from the first light emitting portion 12A and the second light emitting portion 12B. When viewed from above, the exposed portion 11</b>R is provided so as to overlap a straight line passing through the center of the substrate 11 . In this embodiment, the exposed portion 11R is provided so as to overlap the first diagonal line 21 of the substrate 11 when viewed from above. The exposed portion 11R is located between the first light emitting portion 12A and the second light emitting portion 12B in top view. The exposed portion 11R is continuously provided from one corner of the substrate 11 to the other corner. A diagonal line different from the first diagonal line 21 among the diagonal lines of the substrate 11 in top view is referred to as a second diagonal line 22 . The center of the substrate 11 is the intersection of the first diagonal line 21 and the second diagonal line 22 . The width of the exposed portion 11R can be, for example, 3 μm or more and 10 μm or less.

The first light emitting unit 12A and the second light emitting unit 12B are laminates in which semiconductor layers are stacked on the substrate 11 . The first light emitting section 12A and the second light emitting section 12B provided on the substrate 11 are electrically insulated. Each of the first light emitting unit 12A and the second light emitting unit 12B includes a first conductive type first semiconductor layer 12n, a second conductive type second semiconductor layer 12p, the first semiconductor layer 12n and the second semiconductor layer 12p. and an active layer 12a located between. In this embodiment, the first conductivity type is n-type and the second conductivity type is p-type. For the first semiconductor layer 12n, the active layer 12a, and the second semiconductor layer 12p, a semiconductor such as In _X Al _Y Ga _1-XY N (0≦X, 0≦Y, X+Y<1) is preferably used. Further, each of these semiconductor layers may have a single layer structure, a laminated structure of a plurality of layers having different compositions and film thicknesses, a superlattice structure, or the like. In particular, the active layer 12a preferably has a single-quantum-well or multiple-quantum-well structure in which thin films that produce a quantum effect are laminated. The semiconductor layer can be doped with n-type impurities such as Si, Ge and/or p-type impurities such as Mg, Zn. The first semiconductor layer 12n includes, for example, a semiconductor layer doped with an n-type impurity. The second semiconductor layer 12p includes, for example, a semiconductor layer doped with p-type impurities.

As shown in FIG. 1, the top view shape of the first semiconductor layer 12n of the first light emitting section 12A and the second light emitting section 12B is, for example, substantially triangular. When viewed from above, the first light-emitting portion 12A and the second light-emitting portion 12B are separated by a linear exposed portion 11R, and the area of the first light-emitting portion 12A and the area of the second light-emitting portion 12B are substantially the same. . Accordingly, when the first light emitting unit 12A and the second light emitting unit 12B are connected in series, variations in the voltage applied to the first light emitting unit 12A and the second light emitting unit 12B can be reduced. and the second light emitting portion 12B can be suppressed.

The first semiconductor layer 12n of the first light-emitting portion 12A and the second light-emitting portion 12B has a first portion 12na and a second portion 12nb located inside the first portion 12na when viewed from above. The first portion 12na is a portion where the active layer 12a and the second semiconductor layer 12p are not provided, and the first semiconductor layer 12n is exposed from the active layer 12a and the second semiconductor layer 12p. An active layer 12a and a second semiconductor layer 12p are provided in the second portion 12nb. When viewed from above, the first portion 12na is located outside the outer edge of the second semiconductor layer 12p. When viewed from above, the first portion 12na has a plurality of extensions extending toward the second portion 12nb, and a first opening 14n of the insulating layer 14, which will be described later, is located in the extension of the first portion 12na. are doing.

The light-reflective electrode 13 is provided on the upper surface of the second semiconductor layer 12p and electrically connected to the second semiconductor layer 12p, as shown in FIGS. 1 and 2A to 2C. The light reflective electrode 13 is provided covering substantially the entire upper surface of the second semiconductor layer 12p.

The light-reflective electrode 13 can diffuse the current supplied through the second electrode 16 and the third electrode 17 to the second semiconductor layer 12p. The light reflective electrode 13 preferably has high light reflectivity with respect to the light from the active layer 12a. The light-reflective electrode 13 preferably has a reflectance of, for example, 70% or more, preferably 80% or more, with respect to light from the active layer 12a. A metal material having good conductivity and light reflectivity can be used for the light reflective electrode 13 . Ag, Al, Ni, Ti, Pt, Ta, Ru, or an alloy containing these metals as a main component can be suitably used as a metal material for the light-reflective electrode 13, for example. Also, the light reflective electrode 13 can use a single layer or a laminated layer of these metal materials. The thickness of the light reflective electrode 13 can be, for example, 300 nm or more and 1 μm or less.

As shown in FIGS. 1 and 2A to 2C, the insulating layer 14 is provided so as to cover the surfaces of the first light-emitting portion 12A and the second light-emitting portion 12B and the surface of the exposed portion 11R of the substrate 11. As shown in FIGS. The insulating layer 14 has a plurality of first openings 14n located on the first semiconductor layer 12n and at least a plurality of openings 14n located on the second semiconductor layer 12p provided in each of the first light emitting section 12A and the second light emitting section 12B. and one second opening 14p. When viewed from above, the plurality of first openings 14n are located on the first portion 12na located outside the outer edge of the second semiconductor layer 12p. When viewed from above, the plurality of first openings 14n are provided in an island shape. In this embodiment, three first openings 14n are provided in each of the first light emitting section 12A and the second light emitting section 12B. In addition, two second openings 14p are provided in the first light emitting section 12A, and one second opening 14p is provided in the second light emitting section 12B.

At least one of the plurality of first openings 14n provided in the second light emitting portion 12B is positioned between the first external connection portion 152 and the second external connection portion 162 when viewed from above. This makes it easier to supply a current to the region between the first external connection portion 152 and the second external connection portion 162, thereby improving the light emission distribution of the light emitting element 10A. At least one of the plurality of first openings 14n provided in the second light emitting portion 12B is preferably positioned on the second diagonal line 22. As shown in FIG. This can further improve the light emission distribution of the light emitting element 10A.

At least one of the plurality of first openings 14n provided in the first light emitting portion 12A is positioned on the second diagonal line 22. As shown in FIG. In the present embodiment, one of the first openings 14n provided in the first light emitting portion 12A is located between the first external connection portion 152 and the outer edge of the substrate 11 on the second diagonal line 22 when viewed from above. are doing. This makes it easier to supply a current between the first external connection portion 152 and the outer edge of the substrate 11, thereby improving the light emission distribution of the light emitting element 10A. The first wiring portion 151 is electrically connected to the first semiconductor layer 12n at the first opening portion 14n provided between the first external connection portion 152 on the second diagonal line 22 and the outer edge of the substrate 11. there is Therefore, the distance between the outer edge of the first wiring portion 151 and the outer edge of the substrate 11 on the second diagonal line 22 is greater than the distance between the outer edge of the third electrode 17 and the outer edge of the substrate 11 on the second diagonal line 22. is also shorter.

The size of the first opening 14n can be appropriately set according to the sizes of the first light emitting portion 12A and the second light emitting portion 12B. For example, when the shape of the first opening 14n when viewed from above is circular, the diameter of the first opening 14n can be, for example, 5 μm or more and 20 μm or less. By setting the diameter of the first opening 14n to 5 μm or more, it is possible to increase the area where the first electrode 15 and the third electrode 17 are connected to the first semiconductor layer 12n, thereby suppressing an increase in the forward voltage Vf. . By setting the diameter of the first opening 14n to 20 μm or less, it is possible to reduce the area from which the active layer 12a is removed and suppress the reduction in the area of the active layer 12a.

The second opening 14p provided in the first light emitting section 12A is provided in a region other than the region between the first external connection portion 152 and the second external connection portion 162. As shown in FIG. The area of the second semiconductor layer 12p of the first light emitting portion 12A located in the region between the first external connection portion 152 and the second external connection portion 162 tends to be small, and the second opening 14p is provided in a desired shape. difficult. By providing the second opening portion 14p provided in the first light emitting portion 12A in a region other than the region between the first external connection portion 152 and the second external connection portion 162, the shape of the second opening portion 14p can be set as desired. It is easy to provide a shape, and the electrical characteristics of the light emitting element 10A can be stabilized.

When viewed from above, the area of the second opening 14p provided in the first light emitting section 12A is larger than the area of the first opening 14n. For example, the area of one second opening 14p provided in the first light emitting section 12A should be 30 to 50 times the area of one first opening 14n provided in the first light emitting section 12A. can be done.

As the insulating layer 14, an oxide or a nitride can be used. For the insulating layer 14, for example, an oxide or nitride containing at least one material selected from the group consisting of Si, Ti, Zr, Nb, Ta and Al can be preferably used. For the insulating layer 14, for example, SiO2, SiN, or the like is used. Also, the insulating layer 14 can use a single layer or a laminated layer of these oxides or nitrides. As the insulating layer 14, two or more dielectric layers having different refractive indices may be laminated to constitute a DBR (Distributed Bragg Reflector) film.

As shown in FIGS. 1 and 2A to 2C, the first electrode 15 is provided on the insulating layer 14, and is connected to the first light emitting section 12A through a plurality of first openings 14n provided in the first light emitting section 12A. is electrically connected to the first semiconductor layer 12n. A portion of the first electrode 15 is provided above the second semiconductor layer 12p with the insulating layer 14 interposed therebetween. The second electrode 16 is electrically connected to the second semiconductor layer 12p of the second light emitting section 12B at the second opening 14p provided in the second light emitting section 12B. A portion of the second electrode 16 is provided on the insulating layer 14 . The third electrode 17 is provided on the insulating layer 14 and electrically connected to the second semiconductor layer 12p of the first light emitting section 12A through the second opening 14p provided in the first light emitting section 12A. The plurality of first openings 14n provided in the second light emitting section 12B are electrically connected to the first semiconductor layer of the second light emitting section 12B. The third electrode 17 continuously covers the first light emitting portion 12A, the second light emitting portion 12B, and the exposed portion 11R. The first light-emitting portion 12A and the second light-emitting portion 12B are connected in series by a first electrode 15, a second electrode 16, and a third electrode 17. As shown in FIG.

In this embodiment, the first electrode 15 and the third electrode 17 are electrically connected to the first semiconductor layer 12n only through the first opening 14n located above the first portion 12na of the first semiconductor layer 12n. . That is, the first electrode 15 and the third electrode 17 are not electrically connected to the first semiconductor layer 12n located inside the outer edge of the second semiconductor layer 12p. As a result, it is possible to secure a large area for the active layers 12a of the first light emitting section 12A and the second light emitting section 12B. When electrically connecting the first electrode 15 and the third electrode 17 to the first semiconductor layer 12n located inside the outer edge of the second semiconductor layer 12p, it is necessary to partially remove the active layer 12a. The area of the active layer 12a of 10A is reduced. The first electrode 15 and the third electrode 17 are electrically connected to a third portion located inside the outer edge of the second semiconductor layer 12p and exposing the first semiconductor layer 12n to the extent that the light emission distribution is not deteriorated. may be When viewed from above, the third portion is a portion surrounded by the second semiconductor layer 12p.

The first electrode 15 includes a first wiring portion 151 provided on the first semiconductor layer 12n and a first external connection portion provided on the first wiring portion 151 and electrically connected to the first wiring portion 151. 152 included. The first wiring portion 151 is electrically connected to the first semiconductor layer 12n through a plurality of first openings 14n provided in the first light emitting portion 12A. The second electrode 16 includes a second wiring portion 161 provided on the second semiconductor layer 12p and a second external connection portion provided on the second wiring portion 161 and electrically connected to the second wiring portion 161. 162 included. The second wiring portion 161 is electrically connected to the light reflective electrode 13 at the second opening 14p provided in the second light emitting portion 12B. When viewed from above, the first wiring portion 151, the second wiring portion 161, and the third electrode 17 are provided so as not to overlap each other. When viewed from above, the second wiring portion 161 is surrounded by the third electrode 17 . The distance between the outer edge of the third electrode 17 and the outer edge of the substrate 11 on the first diagonal line 21 is substantially the same as the distance between the outer edge of the third electrode 17 and the outer edge of the substrate 11 on the second diagonal line 22 . be.

A metal material can be used for the first wiring portion 151, the second wiring portion 161, and the third electrode 17. For example, Ag, Al, Ni, Rh, Au, Cu, Ti, Pt, Pd, Mo, Single metals such as Cr and W or alloys containing these metals as main components can be preferably used. When an alloy is used for the first wiring portion 151, the second wiring portion 161, and the third electrode 17, for example, an AlSiCu alloy or the like can be used. In addition, the first wiring portion 151, the second wiring portion 161, and the third electrode 17 can use a single layer or a laminated layer of these metal materials. In this embodiment, the first wiring portion 151, the second wiring portion 161, and the third electrode 17 have a laminated structure using the same metal material.

As shown in FIG. 2C , the first external connection portion 152 and the second external connection portion 162 are provided on the second diagonal line 22 . In the direction parallel to the first diagonal line 21, the first external connection portion 152 and the second external connection portion 162 are provided so as not to overlap each other. By arranging the first external connection portion 152 and the second external connection portion 162 in this way, the distance between the first external connection portion 152 and the second external connection portion 162 can be reduced to, for example, the first external connection portion 152 and the second external connection portion 162 can be made longer than in the case of arranging them facing each other in a direction parallel to one side of the substrate 11 . As a result, when bonding the first external connection portion 152 and the second external connection portion 162 to the substrate provided with the wiring, the first external connection portion 152 or the second external connection portion 152 or the second external connection portion can be connected across the two wirings having different conductivity. 162 can be suppressed. Also, when the first external connection portion 152 and the second external connection portion 162 are joined to the wiring using a conductive member such as solder, the conductive member electrically connects the first external connection portion 152 and the second external connection portion 162 to each other. can be suppressed. In other words, it is possible to prevent the first external connection portion 152 and the second external connection portion 162 from being short-circuited by the conductive member. When viewed from above, the shortest distance between the first external connection portion 152 and the second external connection portion 162 is, for example, preferably 30% or more and 60% or less of one side of the substrate 11, and 40% or more and 50% or less. is more preferable. The shortest distance between the first external connection portion 152 and the second external connection portion 162 is, for example, 120 μm or more and 250 μm or less.

The top view shape of the first external connection portion 152 and the second external connection portion 162 is substantially triangular. In the present embodiment, the top view shape of the first external connection portion 152 and the second external connection portion 162 is a triangle with rounded corners. From the viewpoint of improving the bondability and positional accuracy between the first external connection portion 152 and the second external connection portion 162 and the wiring, the sizes of the first external connection portion 152 and the second external connection portion 162 should be substantially the same. is preferred.

When viewed from above, the first external connection portion 152 and the second external connection portion 162 include straight portions parallel to the first diagonal line 21 . The distance between the straight portion of the first external connection portion 152 and the straight portion of the second external connection portion 162 corresponds to the shortest distance between the first external connection portion 152 and the second external connection portion 162 . The length of the linear portion of the first external connection portion 152 and the second external connection portion 162 can be, for example, 20% or more and 40% or less of the length of one side of the substrate 11 . Since the first external connection portion 152 and the second external connection portion 162 have such straight portions, the distance between the straight portion of the first external connection portion 152 and the straight portion of the second external connection portion 162 is the same. Regions can be placed. As a result, there is no portion where the first external connection portion 152 and the second external connection portion 162 are partially close to each other, and the first external connection portion 152 and the second external connection portion 162 are electrically connected when they are bonded to the substrate. You can suppress being connected.

Metals such as Cu, Au, and Ni can be suitably used as materials for the first external connection portion 152 and the second external connection portion 162 . Also, the first external connection part 152 and the second external connection part 162 can use a single layer or a laminated layer of these metal materials. The thickness of the first external connection portion 152 and the second external connection portion 162 can be, for example, 30 μm or more and 70 μm or less.

As shown in FIGS. 1 and 2A to 2C, the protective film 30 is provided to cover the surfaces of the insulating layer 14, the first electrode 15, the second electrode 16, and the third electrode 17. As shown in FIG. The protective film 30 covers the surfaces of the first light emitting section 12A and the second light emitting section 12B. The protective film 30 is a member for protecting the insulating layer 14 , the first electrode 15 , the second electrode 16 and the third electrode 17 . The protective film 30 includes a third opening 30n positioned above the first wiring portion 151 and a fourth opening 30p positioned above the second wiring portion 161 . A seed electrode 18 is provided in the third opening 30n and the fourth opening 30p. A seed electrode 18 is provided between the first wiring portion 151 and the first external connection portion 152 and between the second wiring portion 161 and the second external connection portion 162 . For example, when the first external connection portion 152 and the second external connection portion 162 are formed by plating, the first external connection portion 152 and the second external connection portion 162 are formed by growing from the seed electrode 18 as a starting point. .

As described above, the light-emitting element 10A includes the first electrode 15 and the third electrode 17 electrically connected to the first semiconductor layer 12n through the plurality of first openings 14n located on the first portion 12na. have. This makes it possible to improve the light emission distribution of the light emitting element 10A while securing relatively large areas for the active layers 12a of the first light emitting section 12A and the second light emitting section 12B. The light-emitting element 10A also has a first light-emitting portion 12A and a second light-emitting portion 12B separated by an exposed portion 11R provided overlapping a first diagonal line 21 passing through the center of the substrate 11 . As a result, variations in the voltage applied to the first light emitting section 12A and the second light emitting section 12B connected in series can be reduced, and the light emission distribution can be improved.

Although the light-emitting element 10A including two light-emitting portions has been described in this embodiment, the light-emitting element may include three or more light-emitting portions. Moreover, although the form in which the protective film 30 is provided has been described in the present embodiment, the protective film 30 may not be provided. Also, in the present embodiment, the configuration in which the light reflective electrode 13 is provided has been described, but the light reflective electrode 13 may not be provided. Also, although the embodiment in which the seed electrode 18 is provided has been described, the seed electrode 18 is not provided, the first external connection portion 152 is provided directly to the first wiring portion 151, and the second external connection portion 162 is provided to the second wiring portion 161. may be placed directly on the Further, in the present embodiment, a mode in which the straight exposed portion 11R is provided on the substrate 11 has been described. 12B may be electrically insulated. Further, in the top view, the exposed portion 11R is provided only with a straight line, but a part of the exposed portion 11R may be curved. Also, in the top view, the exposed portion 11R is provided as one straight line, but the exposed portion 11R may include a plurality of straight lines. For example, a first straight line located in a region between the first external connection portion 152 and the second external connection portion 162 and overlapping the first diagonal line 21 and a second straight line continuing from the first straight line and parallel to one side of the substrate 11 and the exposed portion 11R having the above.

<Second embodiment>
Next, with reference to FIG. 3A, the configuration of the light emitting device 10B of the second embodiment will be described.

The light emitting element 10B differs from the light emitting element 10A mainly in the arrangement of the third electrode 17, as shown in FIG. 3A. Below, the same reference numerals are assigned to the same configurations as in FIG.

As shown in FIG. 3A, in the present embodiment, the first distance between the outer edge of the third electrode 17 on the first diagonal 21 and the outer edge of the substrate 11 is equal to the outer edge of the third electrode 17 on the second diagonal 22 and the outer edge of the substrate 11. That is, the distance from the outer edge of the substrate 11 on which the exposed portion 11R is provided to the outer edge of the third electrode 17 is increased, and the distance from the outer edge of the substrate 11 on which the exposed portion 11R is not provided to the outer edge of the third electrode 17 is increased. are doing. Here, for example, as in a light-emitting device 100B described later, when the light-transmitting member 60 is provided on the outer peripheral portion of the light-emitting element 10A, part of the light-transmitting member 60 may creep up onto the exposed portion 11R. This is because the exposed portion 11R is not provided with the first light emitting portion 12A and the second light emitting portion 12B, and the area of the light emitting element 10A where the exposed portion 11R is provided is lower than the other areas. It's for. If the translucent member 60 containing phosphor comes into contact with the third electrode 17, the third electrode 17 may corrode and the reliability of the light emitting device may be lowered. According to the present embodiment, since the first distance is relatively long, even if the light-transmitting member 60 crawls up the exposed portion 11R, it is suppressed from reaching the third electrode 17, and the light-transmitting member 60 prevents the light-transmitting member 60 from reaching the third electrode 17. Corrosion or the like of the three electrodes 17 can be suppressed. As a result, the reliability of the light emitting device can be improved.

The first distance can be, for example, 1.5 to 3 times the second distance. By setting the first distance to be 1.5 times or more the second distance, it is possible to easily suppress the translucent member 60 from reaching the third electrode 17 . By making the first distance three times or less the second distance, it is possible to easily secure a region for arranging the third electrode 17 . From the viewpoint of securing the area where the third electrode 17 is arranged, the outer edge of the third electrode 17 on the first diagonal line 21 should not be located in the region between the first light emitting section 12A and the second light emitting section 12B. is provided in

In this embodiment, since the first distance is longer than the second distance, the area where the third electrode 17 is arranged becomes smaller than in the light emitting element 10A of the first embodiment. The area of the third electrode 17 located near the first diagonal line 21 is smaller than that of the light emitting device 10A of the first embodiment. As shown in a light-emitting device 100C, which will be described later, a light-reflective first reflecting member 50 is provided on a region where the third electrode 17 is not provided. Therefore, in the region where the third electrode 17 is not provided, the light from the light emitting element 10A is reflected by the first reflecting member 50 toward the translucent member 60 side.

<Modification of Second Embodiment>
Next, with reference to FIG. 3B, the configuration of a light emitting element 10B1, which is a first modified example of the second embodiment, will be described. FIG. 3B is a schematic cross-sectional view of a position corresponding to line IIB-IIB in FIG. 1 in light emitting element 10B1.

The main difference between the light emitting element 10B1 and the light emitting element 10B1 is that part of the third electrode 17 is exposed from the protective film 30, as shown in FIG. 3B. Therefore, the schematic cross-sectional view of the light emitting element 10B shown in FIG. 3A at a position corresponding to line IIB-IIB in FIG. It is the same as the schematic cross-sectional view of . Below, the same reference numerals are assigned to the same configurations as in FIG.

As shown in FIG. 3B, the light reflective electrode 13 and part of the third electrode 17 are arranged in contact with each other in the vertical direction. At a position where the light reflective electrode 13 and a part of the third electrode 17 overlap, a part of the third electrode 17 opposite to the side in contact with the light reflective electrode 13 is exposed from the protective film 30, and the third electrode 17 is formed with an exposed portion 17a. One exposed portion 17a is formed in each of the first openings 14p when viewed from above. Here, FIG. 3C is a circuit configuration diagram of the light emitting element 10B1 including the exposed portion 17a. As shown in FIG. 3C, the first external connection portion 152, the first light emitting portion 12A, the third electrode 17, the second light emitting portion 12B, and the second external connection portion 162 are electrically connected in series. In the first light emitting section 12A, the first external connection section 152, the seed electrode 18, the first wiring section 151, the first semiconductor layer 12n, the active layer 12a, the second semiconductor layer 12p, the light reflective electrode 13, and the third Electrodes 17 are electrically connected. In addition, in the second light emitting section 12B, the third electrode 17, the first semiconductor layer 12n, the active layer 12a, the second semiconductor layer 12p, the light reflective electrode 13, the second wiring section 161, the seed electrode 18, and the second The external connection portion 162 is electrically connected. A third electrode 17 is electrically connected between the first light emitting portion 12A and the second light emitting portion 12B, and each exposed portion 17a has the same potential.

In the light-emitting element 10B1, for example, a probe is brought into contact with the first external connection portion 152 and the second external connection portion 162 to perform an inspection, thereby checking the electrical properties of the first light-emitting portion 12A and the second light-emitting portion 12B. characteristics can be evaluated. Thus, in the light emitting device 10B1, it is possible to evaluate the combined electrical characteristics of the first light emitting section 12A and the second light emitting section 12B. In addition, in the light-emitting element 10B1, the electrical characteristics of the first light-emitting portion 12A can be evaluated using one of the exposed portions 17a and the first external connection portion 152. FIG. Furthermore, using one of the exposed portions 17a and the second external connection portion 162, the electrical characteristics of the second light emitting portion 12B can be evaluated. Therefore, in the light-emitting element 10B1, in addition to the combined electrical characteristics of the first light-emitting portion 12A and the second light-emitting portion 12B, the electrical characteristics of the first light-emitting portion 12A and the second light-emitting portion 12B are individually evaluated. can do. In addition, since the electrical characteristics of the first light emitting unit 12A and the second light emitting unit 12B can be individually evaluated, the reliability of the evaluation of the light emitting element 10B1 can be improved.

Next, with reference to FIG. 3D, the configuration of a light emitting element 10B2, which is a second modification of the second embodiment, will be described. FIG. 3D is a schematic cross-sectional view of a position corresponding to line IIB-IIB in FIG. 1 in light emitting element 10B2.

As shown in FIG. 3D, the light emitting element 10B2 differs from the light emitting element 10B1 in that a metal layer is arranged above the exposed portion 17a of the light emitting element 10B1 of the first modified example of the second embodiment. Below, the same reference numerals are given to the same configurations as in FIG. 10B1, and the description thereof is omitted.

As shown in FIG. 3D, a metal layer 18a is arranged above the exposed portion 17a. For example, the same material as the seed electrode 18 is used as the material of the metal layer 18a. In this case, the metal layer 18a may be formed simultaneously with the seed electrode 18 at the timing of forming the seed electrode 18, for example. By providing the metal layer 18a, the probe can be brought into contact with the metal layer 18a. By bringing the probe into contact with the exposed portion 17a of the third electrode 17 via the metal layer 18a in this way, damage to the third electrode 17 can be suppressed.

<Third Embodiment>
Next, with reference to FIG. 4, the configuration of the light emitting device 10C of the third embodiment will be described.

As shown in FIG. 4, the light emitting element 10C differs from the light emitting element 10A mainly in the arrangement of the second openings 14p provided in the first light emitting portion 12A. Below, the same reference numerals are assigned to the same configurations as in FIG.

As shown in FIG. 4, in the present embodiment, one second opening 14p is formed between a region between the first external connection portion 152 and the second external connection portion 162 and an area between the first external connection portion 152 and the second external connection portion 152 and the second opening 14p. It is provided continuously with the area other than the area between the external connection part 162 . Thereby, the area where the third electrode 17 and the second semiconductor layer 12p of the first light emitting section 12A are electrically connected can be made larger than the light emitting element 10A of the first embodiment. As a result, the forward voltage Vf of the light emitting element 10A can be reduced.

In the direction parallel to the second diagonal line 22, the width of the second opening 14p provided in the region between the first external connection portion 152 and the second external connection portion 162 is the same as the width of the first external connection portion 152 and the second It is smaller than the width of the second opening 14p provided in the region other than the area between the external connection portion 162 and the external connection portion 162 . As a result, the distance between the first external connection portion 152 and the second external connection portion 162 is further shortened, and the area where the third electrode 17 and the second semiconductor layer 12p of the first light emitting portion 12A are connected is increased. It can be easily secured. Note that, in the present embodiment, the first external connection portion 152 may be the first electrode 15 . Also, the second external connection portion 162 may be the second electrode 16 .

<Fourth Embodiment>
Next, with reference to FIG. 5, the configuration of the light emitting device 10D of the fourth embodiment will be described. Below, the same reference numerals are assigned to the same configurations as in FIG.

As shown in FIG. 5, the light emitting element 10D is provided so that the exposed portion 11R of the substrate 11 overlaps a straight line that passes through the center of the substrate 11 and bisects the length of one side of the substrate 11. As shown in FIG. The first external connection portion 152 and the second external connection portion 162 are provided facing each other in a direction perpendicular to the direction parallel to the exposed portion 11R. The top view shape of the 1st light emission part 12A and the 2nd light emission part 12B is a substantially square shape. When viewed from above, the area of the first light emitting section 12A and the area of the second light emitting section 12B are substantially the same. The top view shape of the first external connection portion 152 and the second external connection portion 162 is a rectangle with rounded corners. Four first openings 14n are provided in each of the first light emitting portion 12A and the second light emitting portion 12B. Two of the four first openings 14n provided in the second light-emitting portion 12B are located between the first external connection portion 152 and the second external connection portion 162. As shown in FIG. In the direction orthogonal to the direction parallel to the exposed portion 11R, two of the four first openings 14n provided in the first light emitting portion 12A are located between the first external connection portion 152 and the substrate 11. located between the outer edges. A second opening 14p provided in the first light emitting portion 12A is provided along the exposed portion 11R. The second opening portion 14p provided in the first light emitting portion 12A is divided into a region between the first external connection portion 152 and the second external connection portion 162 and a region between the first external connection portion 152 and the second external connection portion 162. It is provided continuously with the area other than between. Note that, in the present embodiment, the first external connection portion 152 may be the first electrode 15 . Also, the second external connection portion 162 may be the second electrode 16 .

In the light-emitting device 10D according to the present embodiment, as in the light-emitting device 10A according to the first embodiment described above, the active layers 12a of the first light-emitting portion 12A and the second light-emitting portion 12B have relatively large areas. , the light emission distribution of the light emitting element 10D can be improved.

<Light emitting device 100A>
A configuration of a light emitting device 100A using the light emitting element 10A will be described with reference to FIGS. 6A, 6B, and 7. FIG. 6A and 6B are perspective views showing the light emitting device 100A. The cross-sectional view shown in FIG. 7 schematically shows a cross-section taken along line VII-VII in FIG. 6B.

As shown in FIGS. 6A, 6B, and 7, the light emitting device 100A includes a light emitting element 10A, a covering member 40 covering the side surface of the light emitting element 10A, and a second covering member covering the side surface of the light emitting element 10A and the surface of the covering member 40. 1 reflective member 50 and a translucent member 60 provided on the lower surface of the substrate 11 of the light emitting element 10A.

The covering member 40 covers at least part of the side surface of the light emitting element 10A and the upper surface of the translucent member 60, as shown in FIG. The covering member 40 covers part of each side surface of the light emitting element 10A. A substrate 11 of the light emitting element 10A is covered with a covering member 40. As shown in FIG. The covering member 40 has a curved surface at a portion in contact with the first reflecting member 50 . By providing the covering member 40, the curved surface of the covering member 40 reflects the light emitted from the light emitting element 10A toward the translucent member 60, thereby improving the light extraction efficiency.

The first reflecting member 50 covers part of the upper surface and part of the side surface of the light emitting element 10A, the curved surface of the covering member 40, and the upper surface of the translucent member 60, as shown in FIG. The first reflecting member 50 covers the side surfaces of the first external connection portion 152 and the second external connection portion 162 . The first reflecting member 50 is provided so as not to partially cover the first external connection portion 152 and the second external connection portion 162 . The surfaces of the first external connection portion 152 and the second external connection portion 162 exposed from the first reflecting member 50 function as conductive portions with the outside. The upper surface of the first reflecting member 50 and the upper surfaces of the first external connection portion 152 and the second external connection portion 162 are positioned substantially on the same plane.

Resin or ceramic having light reflectivity is used for the first reflecting member 50 . For the first reflecting member 50, for example, a resin containing a light-reflecting substance can be used. For example, a silicone resin, a modified silicone resin, an epoxy resin, or the like is used as the resin. Titanium oxide, silicon oxide, alumina, or the like is used as the light-reflecting substance. Since the first reflecting member 50 has light reflectivity, it is possible to reflect the light emitted from the light emitting element 10A and improve the light extraction efficiency. The first reflecting member 50 preferably has a reflectance of 60% or more, preferably 70% or more, with respect to the wavelength of light emitted from the light emitting element 10A, for example.

The translucent member 60 is provided on the lower surface of the substrate 11 of the light emitting element 10A. The light-transmitting member 60 can contain a light-reflecting substance or a fluorescent material capable of wavelength-converting part of the light emitted from the light-emitting element 10A. The translucent member 60 can be made of resin, glass, ceramic, or the like, for example. Further, for the translucent member 60 containing phosphor, for example, a sintered body of phosphor, or a phosphor-containing material in resin, glass, or ceramic can be used.

A known material can be applied to the phosphor contained in the translucent member 60 . Examples of the phosphor contained in the translucent member 60 include an yttrium-aluminum-garnet-based phosphor ₍ e.g., _Y3 (Al, Ga) _5O12 :Ce), a lutetium-aluminum-garnet-based phosphor (e.g., Lu ₃ (Al, Ga) ₅ O ₁₂ :Ce), terbium-aluminum-garnet-based phosphors (e.g., Tb ₃ (Al, Ga) ₅ O ₁₂ :Ce), CCA-based phosphors (e.g., Ca ₁₀ (PO ₄ ) ₆ Cl ₂ :Eu), SAE phosphors (eg Sr ₄ Al ₁₄ O ₂₅ :Eu), chlorosilicate phosphors (eg Ca ₈ MgSi ₄ O ₁₆ Cl ₂ :Eu), β-sialon fluorescence body (e.g., (Si, Al) ₃ (O, N) ₄ :Eu), α-sialon phosphor (e.g., Ca(Si, Al) ₁₂ (O, N) ₁₆ :Eu), SLA phosphor ( Nitride phosphors such as SrLiAl ₃ N ₄ :Eu), CASN phosphors (e.g. CaAlSiN ₃ :Eu) or SCASN phosphors (e.g. (Sr, Ca) AlSiN ₃ :Eu), KSF phosphors Phosphor (for example, K ₂ SiF ₆ :Mn), KSAF-based phosphor (for example, K ₂ (Si, Al)F ₆ :Mn) or MGF-based phosphor (for example, 3.5MgO·0.5MgF ₂ ·GeO ₂ :Mn), a phosphor having a perovskite structure (e.g., CsPb(F, Cl, Br, I) ₃ ), or a quantum dot phosphor (e.g., CdSe, InP, AgInS ₂ or AgInSe ₂ ) or the like can be used. By combining these phosphors with the wavelength of light emitted from the light emitting element, a light emitting device with a desired emission color can be obtained.

When the translucent member 60 is arranged so as to cover the lower surface of the substrate 11 of the light emitting element 10A, it can be bonded via an adhesive. As the adhesive, for example, translucent resin such as epoxy or silicone can be used. Direct bonding such as surface activation bonding, atomic diffusion bonding, hydroxyl group bonding, or the like may be used to bond the translucent member 60 to the lower surface of the substrate 11 of the light emitting element 10A.

<Light emitting device 100B>
A configuration of a light emitting device 100B using the light emitting element 10A will be described with reference to FIGS. 8A, 8B, and 9. FIG. 8A and 8B are perspective views showing the light emitting device 100B. The cross-sectional view shown in FIG. 9 schematically shows a cross-section taken along line IX-IX in FIG. 8B.

As shown in FIGS. 8A, 8B, and 9, the light emitting device 100B has the arrangement of the first reflecting member 50, the translucent member 60, and the second reflecting member 70, and the coating member 40 is not arranged. It is mainly different from the light emitting device 100A. 6A, 6B, and 7 are denoted by the same reference numerals, and description thereof will be omitted.

The light emitting device 100B includes a light emitting element 10A, a first reflecting member 50 that partially covers the upper surface of the light emitting element 10A, a translucent member 60 that covers the side surface and the lower surface of the substrate 11 of the light emitting element 10A, and the translucent member 60. and a second reflecting member 70 provided on the lower surface.

The first reflecting member 50 covers part of the upper surface of the light emitting element 10A and the upper surface of the translucent member 60, as shown in FIG. The first reflecting member 50 is not provided on the side and bottom surfaces of the substrate 11 . As a result, of the light emitted from the light emitting element 10A, the light directed toward the first reflecting member 50 is reflected toward the translucent member 60, and the light emitted from the light emitting element 10A is efficiently incident on the translucent member 60. can be made The top surface of the first reflecting member 50 is positioned below the top surfaces of the first external connection portion 152 and the second external connection portion 162 . The top surface of the first reflecting member 50 located between the first external connection portion 152 and the second external connection portion 162 is located below the top surface of the first reflecting member 50 located in other areas.

The translucent member 60 is provided on the side surface of the first semiconductor layer 12n and the side surface and bottom surface of the substrate 11. As shown in FIG. A part of the light emitted from the light emitting element 10A is extracted from the side surface of the translucent member 60 .

The second reflecting member 70 is provided on the bottom surface of the translucent member 60 . The translucent member 60 is provided between the first reflecting member 50 and the second reflecting member 70 . A member similar to the first reflecting member 50 described above can be used for the second reflecting member 70 . Further, a DBR (Distributed Bragg Reflector) including a metal member having light reflectivity and a plurality of dielectric layers can be used for the second reflecting member 70 .

<Light emitting device 100C>
A configuration of a light-emitting device 100C using the light-emitting element 10B2 will be described with reference to FIG. FIG. 10 is a schematic cross-sectional view showing a light emitting device 100C using the light emitting element 10B2. More specifically, FIG. 10 is a schematic cross-sectional view of the light emitting element 10B2 included in the light emitting device 100C at a position corresponding to line IIB-IIB in FIG. A perspective view of the light emitting device 100C is similar to FIGS. 8A and 8B described above. Further, although the light emitting device 100C uses the light emitting element 10B2, either of the light emitting elements 10B and 100B1 may be used.

In the light emitting device 100C, the first distance between the outer edge of the third electrode 17 and the outer edge of the substrate 11 on the first diagonal line 21 is equal to the outer edge of the third electrode 17 and the substrate on the second diagonal line 22 in the light emitting element 10B2. The main difference from the light-emitting device 100B is that the second distance from the outer edge of 11 is longer than the second distance. 8A, 8B, and 9 are denoted by the same reference numerals, and description thereof will be omitted.

As shown in FIG. 10, the light-emitting device 100C includes a light-emitting element 10B2, a first reflecting member 50 that partially covers the upper surface of the light-emitting element 10B2, and a translucent member that covers the side surface and the lower surface of the substrate 11 of the light-emitting element 10B1. 60 and a second reflecting member 70 provided on the lower surface of the translucent member 60 .

In the light emitting element 10B2, the first distance between the outer edge of the third electrode 17 and the outer edge of the substrate 11 on the first diagonal line 21 is shorter than the first distance of the light emitting device 100B. In other words, in the light emitting device 100C using the light emitting element 10B2, the region where the third electrode 17 is arranged is smaller in top view than the light emitting device 100B using the light emitting element 10A. A first reflecting member 50 having light reflectivity is provided on a region where the third electrode 17 is not provided. Therefore, in the region where the third electrode 17 is not provided, the light from the light emitting element 10B2 is reflected by the first reflecting member 50 toward the translucent member 60 side. As a result, compared to the light emitting device 100B described above, more of the light emitted from the light emitting element 10B2 directed toward the first reflecting member 50 is reflected toward the light transmitting member 60 and emitted from the light emitting element 10B2. light can be efficiently incident on the translucent member 60 . Therefore, the light emitting device 100C can further improve the light emission distribution compared to the light emitting device 100B.

As described above, the light-emitting element and the light-emitting device according to the present invention have been specifically described by the embodiments for carrying out the invention. should be interpreted broadly on the basis of In addition, it goes without saying that various changes and modifications based on these descriptions are also included in the gist of the present invention.

10A, 10B, 10B1, 10B2, 10C, 10D light emitting element 11 substrate 11R exposed portion 12A first light emitting portion 12B second light emitting portion 12n first semiconductor layer 12na first portion 12nb second portion 12a active layer 12p second semiconductor layer 13 Light Reflective Electrode 14 Insulating Layer 14n First Opening 14p Second Opening 15 First Electrode 151 First Wiring Portion 152 First External Connection Portion 16 Second Electrode 161 Second Wiring Portion 162 Second External Connection Portion 17 Third Third Electrode 17a Exposed portion 18 Seed electrode 18a Metal layer 21 First diagonal 22 Second diagonal 30 Protective film 30n Third opening 30p Fourth opening 40 Covering member 50 First reflecting member 60 Translucent member 70 Second reflecting member 100A, 100B, 100C light emitting device

Claims (6)

a substrate having a rectangular top view shape;
A first light-emitting portion and a second light-emitting portion provided on the substrate, wherein each of the first light-emitting portion and the second light-emitting portion includes a first semiconductor layer of a first conductivity type and a semiconductor layer of a second conductivity type. the first light emitting unit and the second light emitting unit including a second semiconductor layer of and an active layer located between the first semiconductor layer and the second semiconductor layer;
a plurality of first openings located on the first semiconductor layer, covering the first light-emitting portion and the second light-emitting portion and provided in the first light-emitting portion and the second light-emitting portion, respectively; and at least one second opening located on two semiconductor layers, wherein the plurality of first openings are provided outside an outer edge of the second semiconductor layer when viewed from above. the insulating layer;
a first electrode provided on the insulating layer and electrically connected to the first semiconductor layer of the first light emitting unit at the plurality of first openings provided in the first light emitting unit;
a second electrode electrically connected to the second semiconductor layer of the second light emitting unit at the second opening provided in the second light emitting unit;
is provided on the insulating layer and is electrically connected to the second semiconductor layer of the first light emitting section through the second opening provided in the first light emitting section; a third electrode electrically connected to the first semiconductor layer of the second light emitting section at the plurality of first openings provided;
The substrate has an exposed portion exposed from the first light emitting portion and the second light emitting portion,
When viewed from above, the exposed portion is provided so as to overlap a straight line passing through the center of the substrate ,
The exposed portion is positioned on a first diagonal line of the substrate in top view,
The first electrode includes a first wiring portion provided on the first semiconductor layer and a first external connection portion provided on the first wiring portion and electrically connected to the first wiring portion. including
The second electrode includes a second wiring portion provided on the second semiconductor layer and a second external connection portion provided on the second wiring portion and electrically connected to the second wiring portion. including
The first external connection portion and the second external connection portion are provided on a second diagonal line different from the first diagonal line among diagonal lines of the substrate in top view,
the second opening provided in the first light-emitting portion is provided in a region other than the region between the first external connection portion and the second external connection portion;
When viewed from above, at least one of the plurality of first openings provided in the second light emitting portion is positioned between the first external connection portion and the second external connection portion, and is located between the first external connection portion and the second external connection portion. Light-emitting elements located on two diagonal lines . When viewed from above, at least one of the plurality of first openings provided in the first light emitting section is positioned on the second diagonal line and is on the second diagonal line with the first external connection section. 2. The light emitting device according to claim 1 , located between the outer edge of the substrate . The first wiring portion is electrically connected to the first semiconductor layer at the first opening provided between the first external connection portion and the outer edge of the substrate on the second diagonal line. The light emitting device according to claim 2. A first distance between the outer edge of the third electrode and the outer edge of the substrate on the first diagonal is a second distance between the outer edge of the third electrode and the outer edge of the substrate on the second diagonal. 2. The light emitting device of claim 1 , wherein the length is longer than . The light emitting device according to any one of claims 1 to 4 , wherein the area of the second opening provided in the first light emitting portion is larger than the area of the first opening when viewed from above. 2. The light-emitting device according to claim 1, wherein the area of said first light-emitting portion and the area of said second light-emitting portion are substantially the same.

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