JPH065922A - Multicolor light emitting diode - Google Patents
Multicolor light emitting diodeInfo
- Publication number
- JPH065922A JPH065922A JP16568092A JP16568092A JPH065922A JP H065922 A JPH065922 A JP H065922A JP 16568092 A JP16568092 A JP 16568092A JP 16568092 A JP16568092 A JP 16568092A JP H065922 A JPH065922 A JP H065922A
- Authority
- JP
- Japan
- Prior art keywords
- led
- light emitting
- pellet
- multicolor
- emitting diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、多色発光する発光ダイ
オードに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting diode which emits light of multiple colors.
【０００２】[0002]
【従来の技術】発光ダイオード（ＬＥＤ）は、例えば樹
脂モールド型では図３に示すように、カソードリードフ
レーム３０と、アノードリードフレーム３１と、フレー
ム３０の端部に半田付けされたＬＥＤチップ３２と、チ
ップ３２とフレーム３１とを接続するＡｕ線３３と、こ
れらの要素を被覆するモールド樹脂３４とからなるもの
である。2. Description of the Related Art A light emitting diode (LED) is, for example, in a resin mold type, as shown in FIG. 3, a cathode lead frame 30, an anode lead frame 31, and an LED chip 32 soldered to an end portion of the frame 30. , An Au wire 33 that connects the chip 32 and the frame 31, and a mold resin 34 that covers these elements.
【０００３】ＬＥＤは、ＰＮ接合を持つ半導体であり、
Ｎ領域の電子がＰ領域の正孔と再結合する際に発光する
ものである。発光色は、半導体の種類と、各領域に添加
される不純物により決定される。現在のところ、赤外か
ら青色までのＬＥＤが開発されており、各種機器に様々
な用途で使用されている。An LED is a semiconductor having a PN junction,
It emits light when electrons in the N region recombine with holes in the P region. The emission color is determined by the type of semiconductor and the impurities added to each region. At present, LEDs from infrared to blue have been developed and used for various purposes in various devices.
【０００４】[0004]
【発明が解決しようとする課題】ところで、ＬＥＤの製
造では、各種ステムにＬＥＤチップ（ペレット）を取付
けた後、チップにＡｕ線を接続するのが一般的である。
そして、更にペレットをパッケージ内に収めて製品とす
る。これで得られるＬＥＤは単色発光であるが、多色発
光のＬＥＤとしては、色別に個別のペレットを作製し、
数色分のペレットを同一パッケージ内に収めたものが実
用化されている。By the way, in the manufacture of LEDs, it is general to attach LED chips (pellets) to various stems and then connect Au wires to the chips.
Then, the pellets are placed in a package to make a product. The resulting LED emits monochromatic light, but as a multicolored LED, individual pellets are prepared for each color,
Practical ones that contain pellets of several colors in the same package.
【０００５】しかし、２種類以上のペレットを同一パッ
ケージに収めるには、或る程度のサイズのパッケージが
必要であり、多色化するほどＬＥＤが大型になる。従っ
て、本発明の目的は、多色発光を得ることができ、しか
も大型にはならない多色発光ダイオードを提供すること
にある。However, to accommodate two or more types of pellets in the same package, a package of a certain size is required, and the LED becomes larger as the number of colors increases. Therefore, an object of the present invention is to provide a multicolor light emitting diode which can obtain multicolor light emission and which does not become large in size.
【０００６】[0006]
【課題を解決するための手段】前記目的を達成するため
に、本発明の多色発光ダイオード（多色ＬＥＤ）は、異
なる発光色を放つ少なくとも２つの発光ダイオード素子
を、電気的に遮蔽して１つのペレットに一体化してなる
ことを特徴とする。これにより、ウエハの製造工程で多
色発光のＬＥＤペレットを作製することができ、多色発
光であってもパッケージ内には１つのペレットのみを収
めればよく、従来よりも小型の多色ＬＥＤが実現され
る。In order to achieve the above object, a multicolor light emitting diode (multicolor LED) of the present invention electrically shields at least two light emitting diode elements which emit different emission colors. It is characterized by being integrated into one pellet. As a result, a multicolor LED pellet can be manufactured in the wafer manufacturing process, and even in the case of multicolor emission, only one pellet needs to be contained in the package, which is smaller than conventional multicolor LEDs Is realized.
【０００７】なお、発光ダイオード素子を電気的に遮蔽
する方法としては、ＰＮ接合部まで切り溝を入れること
が例示され、切り溝は例えばダイシングで形成すればよ
い。As a method of electrically shielding the light emitting diode element, it is illustrated that a kerf is formed up to the PN junction, and the kerf may be formed by dicing, for example.
【０００８】[0008]
【実施例】以下、本発明の多色発光ダイオードを実施例
に基づいて説明する。図１は、２色発光のＬＥＤペレッ
ト１０を示す。このペレット１０は、赤色発光のＬＥＤ
素子部分１１と緑色発光のＬＥＤ素子部分１２とを一体
化し、両部分１１，１２で１つのＬＥＤ素子を構成した
もので、両部分１１，１２の境界には、両部分１１，１
２を区切り、ＬＥＤ素子の発光面を２分割する帯状切り
溝１５が形成されている。切り溝１５はＰＮ接合部（点
線部分１９参照）を電気的に解離する深さである。ペレ
ット１０は２色発光する１つのＬＥＤ素子であるが、両
部分１１，１２は切り溝１５によって完全に独立したＬ
ＥＤ素子として機能する。更に、各ＬＥＤ素子部分１
１，１２には、Ａｕ線１１ａ，１２ａが接続されてい
る。EXAMPLES The multicolor light emitting diode of the present invention will be described below based on examples. FIG. 1 shows a two-color emitting LED pellet 10. This pellet 10 is a red-emitting LED
The element portion 11 and the green light emitting LED element portion 12 are integrated, and one LED element is constituted by the both portions 11 and 12.
A band-shaped kerf 15 that divides the area into two and divides the light emitting surface of the LED element into two is formed. The kerf 15 has a depth that electrically dissociates the PN junction (see the dotted line portion 19). The pellet 10 is a single LED device that emits two colors, but both parts 11 and 12 are completely independent L by the kerf 15.
Functions as an ED element. Furthermore, each LED element part 1
Au wires 11a and 12a are connected to 1 and 12, respectively.
【０００９】このようなペレット１０は、半導体材料を
異なる組成でエピタキシャル成長させた後、組成の異な
るエピタキシャル成長層の境界面を電気的に分離するよ
うにＰＡ接合部（点線部分１９参照）まで切り溝１５を
形成することで製造することができる。又、異なる発光
色にするには、例えば図１の２色（赤色と緑色）ＬＥＤ
の場合は、半導体材料にＧａＡｓＰを異なる組成でエピ
タキシャル成長させ、異なる組成のエピタキシャル成長
層の境界面に切り溝を入れて、両層のＰＮ接合部を電気
的に解離させればよい。出来たペレットは、適当なパッ
ケージに収めることにより、例えば図３に示すように樹
脂モールド型にすることで、２色ＬＥＤの製品となる。
この２色ＬＥＤにおいては、赤色と緑色を別々に発光さ
せてもよいし、同時に発光させても構わない。それに
は、ＬＥＤの外部に設けた回路で制御すればよい。In such a pellet 10, after a semiconductor material is epitaxially grown with a different composition, a kerf 15 is formed up to a PA junction (see a dotted line portion 19) so as to electrically separate the boundary surface of the epitaxial growth layers having different compositions. It can be manufactured by forming. Also, in order to make different emission colors, for example, the two-color (red and green) LEDs of FIG. 1 are used.
In this case, GaAsP may be epitaxially grown on the semiconductor material with a different composition, and a kerf may be formed in the boundary surface of the epitaxial growth layers with different compositions to electrically dissociate the PN junctions of both layers. The thus-formed pellets are put into an appropriate package, for example, a resin mold type as shown in FIG. 3 to be a two-color LED product.
In this two-color LED, red and green may be emitted separately or at the same time. This can be controlled by a circuit provided outside the LED.
【００１０】図２は、４色発光のＬＥＤペレット２０を
示す。この例では、ＰＮ接合部（点線部分２９参照）ま
で分離する対角線方向の帯状切り溝２５，２６で、１つ
のペレット２０を三角形状の４つのＬＥＤ素子部分２
１，２２，２３，２４に分割し、各部分２１〜２４にＡ
ｕ線２１ａ，２２ａ，２３ａ，２４ａを接続してある。
発光色は、半導体材料の組成を変えたり、半導体材料、
不純物、及びその添加濃度を変えたりすることで異なる
４色を得ることができる。このペレットを用いた４色Ｌ
ＥＤの場合、４色同時に発光させたり、任意の色を組合
せて発光させたりすることで、７原色（白色〜青色）発
光が可能となる。FIG. 2 shows a four color LED pellet 20. In this example, one pellet 20 is divided into four triangular LED element parts 2 by strip-shaped grooves 25 and 26 in the diagonal direction which are divided up to the PN junction part (see the dotted line part 29).
1, 22, 23, 24 divided into parts 21-24
The u lines 21a, 22a, 23a and 24a are connected.
The emission color can be changed by changing the composition of the semiconductor material,
Different four colors can be obtained by changing the impurity and the concentration of addition thereof. 4 colors L using this pellet
In the case of an ED, it is possible to emit light in seven primary colors (white to blue) by simultaneously emitting light in four colors or in combining arbitrary colors.
【００１１】なお、上記実施例はいずれも単なる一例で
あって、本発明の多色ＬＥＤはこれら実施例に示したも
のに限定されないことは勿論である。例えば、半導体材
料は上記ＧａＡｓＰの他にも、ＩｎＧａＡｌＰ等があ
り、ＧａＡｓＰの場合にはエピタキシャル成長層を部分
的に成長させることで２色発光以上の発光にすることも
可能である。又、切り溝で区切られたＬＥＤ素子部分も
図示したような形状である必要はなく、任意の形状に変
えることができる。It is needless to say that the above embodiments are merely examples, and the multicolor LED of the present invention is not limited to those shown in these embodiments. For example, in addition to GaAsP, the semiconductor material may be InGaAlP or the like. In the case of GaAsP, it is possible to emit light of two or more colors by partially growing the epitaxial growth layer. Further, the LED element portion divided by the kerf does not have to have the shape shown in the drawing, and can be changed to any shape.
【００１２】[0012]
【発明の効果】以上説明したように、本発明の多色ＬＥ
Ｄは、異なる発光色を放つ少なくとも２つのＬＥＤ素子
を、電気的に遮蔽して１つのペレットに一体化してなる
ものであるため、多色発光であるにもかかわらずペレッ
トを収めるパッケージは大して大型にはならない。しか
も、多色の割にはサイズが今までの単色ＬＥＤとそれほ
ど変わらないため、用途が広くなり、例えばＲ．Ｇ．
Ｂ．対応の多色ＬＥＤを作ればＬＥＤテレビ等を実現す
ることが可能となる。As described above, the multicolor LE of the present invention is used.
D is a package in which at least two LED elements emitting different emission colors are electrically shielded and integrated into one pellet, so that the package for storing the pellets is large in spite of multicolor emission. It doesn't. Moreover, the size is not so different from the conventional single-color LED for multiple colors, so that it has a wide range of applications. G.
B. If a corresponding multicolor LED is made, it becomes possible to realize an LED TV or the like.
【図面の簡単な説明】[Brief description of drawings]
【図１】本発明の一実施例に係る多色（２色）ＬＥＤペ
レットの斜視図である。FIG. 1 is a perspective view of a multicolor (two-color) LED pellet according to an embodiment of the present invention.
【図２】本発明の別実施例に係る多色（４色）ＬＥＤペ
レットの斜視図である。FIG. 2 is a perspective view of a multicolor (4 color) LED pellet according to another embodiment of the present invention.
【図３】従来例に係る単色ＬＥＤの一部省略構成図であ
る。FIG. 3 is a partially omitted configuration diagram of a single-color LED according to a conventional example.
１０，２０ ＬＥＤペレット １１，１２ ＬＥＤ素子部分 ２１，２２ ＬＥＤ素子部分 ２３，２４ ＬＥＤ素子部分 １５，２５，２６ 切り溝 10,20 LED pellet 11,12 LED element part 21,22 LED element part 23,24 LED element part 15,25,26 Cut groove
Claims (1)
ダイオード素子を、電気的に遮蔽して１つのペレットに
一体化してなることを特徴とする多色発光ダイオード。1. A multicolor light emitting diode, characterized in that at least two light emitting diode elements emitting different colors of light are electrically shielded and integrated into one pellet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16568092A JPH065922A (en) | 1992-06-24 | 1992-06-24 | Multicolor light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16568092A JPH065922A (en) | 1992-06-24 | 1992-06-24 | Multicolor light emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH065922A true JPH065922A (en) | 1994-01-14 |
Family
ID=15817003
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16568092A Pending JPH065922A (en) | 1992-06-24 | 1992-06-24 | Multicolor light emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH065922A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10256605A (en) * | 1997-03-13 | 1998-09-25 | Rohm Co Ltd | Semiconductor light emitting element |
| JPH11224960A (en) * | 1997-11-19 | 1999-08-17 | Unisplay Sa | Led lamp and led chip |
| JP2007140453A (en) * | 2005-10-17 | 2007-06-07 | Hitachi Displays Ltd | Liquid crystal display apparatus |
| US7947998B2 (en) | 1997-11-19 | 2011-05-24 | Unisplay S.A. | LED lamps |
| US8587020B2 (en) | 1997-11-19 | 2013-11-19 | Epistar Corporation | LED lamps |
-
1992
- 1992-06-24 JP JP16568092A patent/JPH065922A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10256605A (en) * | 1997-03-13 | 1998-09-25 | Rohm Co Ltd | Semiconductor light emitting element |
| JPH11224960A (en) * | 1997-11-19 | 1999-08-17 | Unisplay Sa | Led lamp and led chip |
| US7947998B2 (en) | 1997-11-19 | 2011-05-24 | Unisplay S.A. | LED lamps |
| US8399903B2 (en) | 1997-11-19 | 2013-03-19 | Epistar Corporation | LED lamps |
| US8587020B2 (en) | 1997-11-19 | 2013-11-19 | Epistar Corporation | LED lamps |
| US8592856B2 (en) | 1997-11-19 | 2013-11-26 | Epistar Corporation | LED lamps |
| US8604508B2 (en) | 1997-11-19 | 2013-12-10 | Epistar Corporation | LED lamps |
| US8692268B2 (en) | 1997-11-19 | 2014-04-08 | Epistar Corporation | LED lamps |
| US8779460B2 (en) | 1997-11-19 | 2014-07-15 | Epistar Corporation | Light source unit |
| JP2007140453A (en) * | 2005-10-17 | 2007-06-07 | Hitachi Displays Ltd | Liquid crystal display apparatus |
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