JP7410381B2 - Light emitting element and light emitting device - Google Patents
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Description
本発明は、発光素子及び発光装置に関する。 The present invention relates to a light emitting element and a light emitting device.
発光素子は、一般照明分野及び車載照明分野等で、用途に応じてさらなる高品質化をはかりつつ、広く利用されている。
例えば、発光素子がバンプを用いて実装基板にフリップチップ実装され、さらに光反射性樹脂を発光素子と実装基板の間に入り込ませた構造の発光装置が知られている。（例えば、特許文献１等）。
Light emitting elements are widely used in the field of general lighting, vehicle lighting, etc., with higher quality being achieved depending on the application.
For example, a light-emitting device is known in which a light-emitting element is flip-chip mounted on a mounting board using bumps, and a light-reflecting resin is inserted between the light-emitting element and the mounting board. (For example, Patent Document 1, etc.).
しかし、このような構造の発光装置では、発光素子の下面と実装基板の上面との間におけるバンプの高さ分の隙間に入り込んだ光反射性樹脂が熱膨張して、発光素子を持ち上げることがある。このような場合、発光素子と実装基板との導通が確保できず発光装置の信頼性を低下させるおそれがある。
本発明の一実施形態は、光取り出し効率を維持しつつ、熱による応力負荷を低減することができる発光素子及び発光装置を提供することを目的とする。
However, in a light-emitting device with such a structure, the light-reflecting resin that has entered the gap between the bottom surface of the light-emitting element and the top surface of the mounting board corresponding to the height of the bump thermally expands and lifts the light-emitting element. be. In such a case, conduction between the light emitting element and the mounting board cannot be ensured, which may reduce the reliability of the light emitting device.
One embodiment of the present invention aims to provide a light emitting element and a light emitting device that can reduce thermal stress load while maintaining light extraction efficiency.
本発明の一実施形態は、以下を含む。
（１）第１半導体層、発光層及び第２半導体層を順に有する半導体積層体であって、前記第１半導体層は前記第２半導体層の上面側に前記第２半導体層から前記第１半導体層が露出する複数の露出部を有する半導体積層体と、
前記第２半導体層上に設けられ、前記第２半導体層と接続された光反射性電極と、
前記光反射性電極上に設けられた第２電極と、
前記半導体積層体及び前記光反射性電極を覆うとともに、前記複数の露出部の上方に開口部を有する絶縁膜と、
前記開口部にて前記第１半導体層と接続され、かつ一部が前記絶縁膜を介して前記第２半導体層上に配置された第１電極と、
前記第１電極上に配置された複数の第１外部接続電極と、
前記第２電極上に配置された複数の第２外部接続電極と、
前記第１電極上に配置され、平面視において前記複数の第１外部接続電極を取り囲む第１隔壁とを備え、
前記光反射性電極の外縁は、平面視において前記第２半導体層の外縁よりも内側に配置されており、
前記第１隔壁は、平面視において前記光反射性電極の外縁よりも内側に配置されている発光素子。
（２）上面に配線パターンを有する配線基板と、
前記配線パターン上に、複数の第１外部接続電極及び複数の第２外部接続電極により実装される上述した発光素子と、
前記発光素子と、第１隔壁の外側面とを被覆する被覆部材とを備える発光装置。
One embodiment of the invention includes the following.
(1) A semiconductor laminate including a first semiconductor layer, a light emitting layer, and a second semiconductor layer in this order, wherein the first semiconductor layer extends from the second semiconductor layer to the first semiconductor layer on the upper surface side of the second semiconductor layer. a semiconductor laminate having a plurality of exposed portions where layers are exposed;
a light reflective electrode provided on the second semiconductor layer and connected to the second semiconductor layer;
a second electrode provided on the light reflective electrode;
an insulating film that covers the semiconductor stack and the light reflective electrode and has an opening above the plurality of exposed parts;
a first electrode connected to the first semiconductor layer at the opening and partially disposed on the second semiconductor layer through the insulating film;
a plurality of first external connection electrodes arranged on the first electrode;
a plurality of second external connection electrodes arranged on the second electrode;
a first partition wall disposed on the first electrode and surrounding the plurality of first external connection electrodes in a plan view;
The outer edge of the light-reflective electrode is located inside the outer edge of the second semiconductor layer in plan view,
In the light emitting element, the first partition wall is disposed inside the outer edge of the light reflective electrode in plan view.
(2) a wiring board having a wiring pattern on the top surface;
the above-mentioned light emitting element mounted on the wiring pattern by a plurality of first external connection electrodes and a plurality of second external connection electrodes;
A light-emitting device comprising the light-emitting element and a covering member that covers the outer surface of the first partition.
本発明の一実施形態によれば、光取り出し効率を維持しつつ、熱による応力負荷を低減することができる発光素子及び発光装置を提供することができる。 According to one embodiment of the present invention, it is possible to provide a light-emitting element and a light-emitting device that can reduce stress load due to heat while maintaining light extraction efficiency.
以下に図面を参照しながら、本発明を実施するための形態を説明する。ただし、以下に示す形態は、本発明の技術思想を具体化するための例示であって、本発明を以下に限定するものではない。また、各図面が示す部材の大きさ及び位置関係等は、説明を明確にするために誇張していることがある。さらに、同一の名称、符号については、原則として同一又は同質の部材を示しており、重複した説明は適宜省略する。 DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments for carrying out the present invention will be described with reference to the drawings. However, the form shown below is an illustration for embodying the technical idea of the present invention, and the present invention is not limited to the following. Furthermore, the sizes and positional relationships of members shown in each drawing may be exaggerated for clarity of explanation. Furthermore, the same names and symbols generally indicate the same or homogeneous members, and duplicate explanations will be omitted as appropriate.
〔発光素子１０〕
本実施形態の発光素子１０は、図１Ａから図１Ｄに示すように、半導体積層体１１と、光反射性電極１５と、光反射性電極１５上に設けられた第２電極１６と、開口部１２ａを有する絶縁膜１２と、第１電極１８と、複数の第１外部接続電極１９と、複数の第２外部接続電極２０と、第１隔壁２１とを備える。光反射性電極１５の外縁１５ａは、図１Ａ及び図１Ｅに示すように、平面視において半導体積層体１１、つまり第２半導体層１１ｐの外縁１１ｃよりも内側に配置されており、第１隔壁２１は、平面視において光反射性電極１５の外縁１５ａよりも内側に配置されている。
なお、発光素子１０及び／又は半導体積層体１１の平面形状は、例えば、四角形（略正方形、長方形等）、六角形等の多角形、これらの角に丸みを帯びた形状、円形又は楕円形等、種々の形状とすることができる。
[Light emitting element 10]
As shown in FIGS. 1A to 1D, the light emitting device 10 of this embodiment includes a semiconductor stack 11, a light reflective electrode 15, a second electrode 16 provided on the light reflective electrode 15, and an opening. 12a, a first electrode 18, a plurality of first external connection electrodes 19, a plurality of second external connection electrodes 20, and a first partition 21. As shown in FIGS. 1A and 1E, the outer edge 15a of the light-reflective electrode 15 is located inside the outer edge 11c of the semiconductor stack 11, that is, the second semiconductor layer 11p, in a plan view, and is located closer to the first partition wall 21. are arranged inside the outer edge 15a of the light reflective electrode 15 in plan view.
Note that the planar shape of the light emitting element 10 and/or the semiconductor laminate 11 may be, for example, a quadrilateral (approximately square, rectangular, etc.), a polygon such as a hexagon, a shape with rounded corners, a circle, an ellipse, etc. , can be of various shapes.
このような構成の発光素子により、この発光素子を後述する配線基板３２の配線パターン３１上に、複数の第１外部接続電極１９及び前記複数の第２外部接続電極２０により実装する際、つまり、いわゆるフリップチップ実装する際、第１隔壁２１によって、発光素子と配線基板３２との間に樹脂が入り込むことを効果的に防止することができる。これによって、発光素子の熱による樹脂の熱膨張に起因する発光素子への応力負荷を低減することができる。その結果、発光素子の配線基板３２からの剥がれなどを有効に防止することができる。
また、第１隔壁２１は、第１電極１８上に配置され、複数の第１外部接続電極１９を取り囲み、配線パターン３１に実装されることにより、第１隔壁２１によっても放熱経路を確保することができる。よって、発光素子によって発生した熱を効果的に逃がすことができ、より信頼性の高い発光素子を得ることができる。
さらに、第１隔壁２１によって、発光素子と配線基板３２との間へ樹脂を入り込ませず、第１隔壁２１の外側に樹脂を配置させることができる。そのため、第１隔壁２１の外側で生じることがある発光素子からの光漏れを、光拡散性を有する樹脂、つまり、後述する被覆部材３３によって抑制する構造とすることができる。特に、第１隔壁２１の外側に光反射性電極１５の外縁１５ａが配置されることにより、発光素子の外周において生じる発光素子の光漏れを効果的に低減でき、信頼性及び光取り出し効率を向上させることができる。
With the light emitting element having such a configuration, when the light emitting element is mounted on the wiring pattern 31 of the wiring board 32 described later using the plurality of first external connection electrodes 19 and the plurality of second external connection electrodes 20, that is, When performing so-called flip-chip mounting, the first partition wall 21 can effectively prevent resin from entering between the light emitting element and the wiring board 32. Thereby, stress load on the light emitting element due to thermal expansion of the resin due to heat of the light emitting element can be reduced. As a result, peeling of the light emitting element from the wiring board 32 can be effectively prevented.
Further, the first partition 21 is arranged on the first electrode 18, surrounds the plurality of first external connection electrodes 19, and is mounted on the wiring pattern 31, so that the first partition 21 also secures a heat dissipation path. I can do it. Therefore, heat generated by the light emitting element can be effectively dissipated, and a more reliable light emitting element can be obtained.
Furthermore, the first partition wall 21 prevents the resin from entering between the light emitting element and the wiring board 32, and the resin can be disposed outside the first partition wall 21. Therefore, a structure can be provided in which light leakage from the light emitting elements that may occur outside the first partition wall 21 is suppressed by the resin having light diffusing properties, that is, the covering member 33 described later. In particular, by arranging the outer edge 15a of the light reflective electrode 15 outside the first partition 21, it is possible to effectively reduce light leakage from the light emitting element that occurs around the outer periphery of the light emitting element, improving reliability and light extraction efficiency. can be done.
（半導体積層体１１）
半導体積層体１１は、第１半導体層１１ｎ、発光層１１ａ及び第２半導体層１１ｐがこの順に積層されて構成される。なお、半導体積層体１１は、例えば、基板１３上に積層されている。なお、基板１３は半導体積層体１１から除去してもよい。
基板１３は、半導体層をエピタキシャル成長させることができるものであればよい。このような基板１３としては、サファイア（Ａｌ2Ｏ3）基板、スピネル（ＭｇＡ１2Ｏ4）基板のような絶縁性基板、ＧａＮ基板のような導電性基板等が挙げられる。
第１半導体層１１ｎ、発光層１１ａ及び第２半導体層１１ｐは、例えば、ＩＩＩ－Ｖ族化合物半導体、ＩＩ－ＶＩ族化合物半導体等、種々の半導体が挙げられる。具体的には、ＩｎXＡｌYＧａ1-X-YＮ（０≦Ｘ、０≦Ｙ、Ｘ＋Ｙ≦１）等の窒化物系の半導体材料が挙げられ、ＩｎＮ、ＡｌＮ、ＧａＮ、ＩｎＧａＮ、ＡｌＧａＮ、ＩｎＧａＡｌＮ等を用いることができる。各層の膜厚及び層構造は、当該分野で公知のものを利用することができる。
(Semiconductor laminate 11)
The semiconductor stack 11 is configured by stacking a first semiconductor layer 11n, a light emitting layer 11a, and a second semiconductor layer 11p in this order. Note that the semiconductor stack 11 is stacked on a substrate 13, for example. Note that the substrate 13 may be removed from the semiconductor stack 11.
The substrate 13 may be any substrate that can epitaxially grow a semiconductor layer. Examples of such a substrate 13 include an insulating substrate such as a sapphire (Al 2 O 3 ) substrate, a spinel (MgA1 2 O 4 ) substrate, and a conductive substrate such as a GaN substrate.
The first semiconductor layer 11n, the light emitting layer 11a, and the second semiconductor layer 11p may be made of various semiconductors, such as a III-V group compound semiconductor, a II-VI group compound semiconductor, and the like. Specifically, nitride-based semiconductor materials such as In x Al Y Ga 1-XY N (0≦X, 0≦Y, etc. can be used. For the film thickness and layer structure of each layer, those known in the art can be used.
（露出部１１ｂ）
第１半導体層１１ｎは、第２半導体層１１ｐ及び発光層１１ａが形成されておらず、第１半導体層１１ｎが第２半導体層１１ｐ及び発光層１１ａから露出する複数の露出部１１ｂを有する。つまり、半導体積層体１１は、第２半導体層１１ｐ側の表面に孔を有し、孔の底面に第１半導体層１１ｎが露出している。そして、孔の側面には第２半導体層１１ｐ、発光層１１ａ、任意に第１半導体層１１ｎが露出している。
露出部１１ｂの形状、大きさ、位置、数は、意図する発光素子の大きさ、形状、電極パターン等によって適宜設定することができる。露出部１１ｂは、半導体積層体１１の縁部よりも内側に複数形成されていることが好ましい。露出部１１ｂは、三角格子状又は四角格子状に配置していることが好ましい。これによって、発光素子の輝度ムラを抑制して、均一に光取り出しすることができる。
露出部１１ｂの形状は、例えば、平面視において円又は楕円、三角形、四角形、六角形等の多角形等が挙げられ、なかでも、円形又は円形に近い形状（例えば楕円又は六角形以上の多角形）が好ましい。露出部の大きさは、半導体積層体１１の大きさ、求められる発光素子の出力、輝度等によって適宜調整することができ、例えば、直径が数十～数百μｍ程度の大きさであることが好ましい。別の観点から、直径が、半導体積層体１１の一辺の１／２０～１／５程度の大きさであることが好ましい。
露出部１１ｂは、後述する第１電極１８と電気的に接続される。露出部１１ｂと接続される第１電極１８は、その一部が、後述する絶縁膜１２を介して第２半導体層１１ｐ上に配置される。このような露出部１１ｂは、平面視においてそれぞれが一定の距離をあけて離間して配列されていることが好ましい。具体的には、露出部１１ｂは、第１方向に沿って複数列配置されていることが好ましい。ここでの第１方向とは、例えば、半導体積層体１１又は発光素子１０の一辺に平行な一方向を指す。また、露出部１１ｂは、第１方向に直交する第２方向にも数行以上配置されていることが好ましい。例えば、第２方向に数行～十数行配置されていることが好ましい。
複数の露出部１１ｂはすべてが同じ形状、大きさであってもよいし、それぞれ又は一部が異なる形状、大きさであってもよい。複数の露出部１１ｂは、発光素子における輝度ムラの低減の観点から、全てが同程度の大きさ及び形状であることが好ましい。露出部１１ｂは発光層１１ａを有さない領域であるため、同程度の大きさの複数の露出部を規則的に整列して配置することで、発光面積及び電流の供給量の偏りを抑制することができる。その結果、発光素子全体として、輝度ムラを抑制することができる。
露出部１１ｂは、半導体積層体１１の縁部の内側に配置されるものの合計面積が、半導体積層体１１の平面積の３０％以下、２５％以下が好ましい。露出部１１ｂの合計面積を半導体積層体１１の平面積の３０％以下とすることで、第１半導体層１１ｎ及び第２半導体層１１ｐへの電流供給のバランスを図ることができ、供給される電力の偏りによる輝度ムラを抑制することができる。
(Exposed part 11b)
In the first semiconductor layer 11n, the second semiconductor layer 11p and the light emitting layer 11a are not formed, and the first semiconductor layer 11n has a plurality of exposed parts 11b exposed from the second semiconductor layer 11p and the light emitting layer 11a. That is, the semiconductor stack 11 has a hole on the surface on the second semiconductor layer 11p side, and the first semiconductor layer 11n is exposed at the bottom of the hole. The second semiconductor layer 11p, the light emitting layer 11a, and optionally the first semiconductor layer 11n are exposed on the side surface of the hole.
The shape, size, position, and number of the exposed portions 11b can be appropriately set depending on the intended size, shape, electrode pattern, etc. of the light emitting element. It is preferable that a plurality of exposed parts 11b be formed inside the edge of the semiconductor stacked body 11. The exposed portions 11b are preferably arranged in a triangular lattice shape or a square lattice shape. Thereby, uneven brightness of the light emitting element can be suppressed and light can be extracted uniformly.
The shape of the exposed portion 11b may be, for example, a circle, an ellipse, a triangle, a quadrangle, a polygon such as a hexagon, etc. in plan view, and among them, a circle or a shape close to a circle (for example, an ellipse or a polygon larger than a hexagon). ) is preferred. The size of the exposed portion can be adjusted as appropriate depending on the size of the semiconductor laminate 11, the required output of the light emitting element, the brightness, etc. For example, the exposed portion may have a diameter of several tens to several hundred μm. preferable. From another point of view, the diameter is preferably about 1/20 to 1/5 of one side of the semiconductor stack 11.
The exposed portion 11b is electrically connected to a first electrode 18, which will be described later. A portion of the first electrode 18 connected to the exposed portion 11b is placed on the second semiconductor layer 11p via an insulating film 12, which will be described later. It is preferable that such exposed portions 11b are arranged at a certain distance from each other in plan view. Specifically, the exposed portions 11b are preferably arranged in multiple rows along the first direction. The first direction here refers to one direction parallel to one side of the semiconductor stack 11 or the light emitting element 10, for example. Further, it is preferable that the exposed portions 11b are also arranged in several rows or more in a second direction perpendicular to the first direction. For example, it is preferable that several to ten or more lines are arranged in the second direction.
All of the plurality of exposed parts 11b may have the same shape and size, or each or some of them may have different shapes and sizes. It is preferable that all of the plurality of exposed parts 11b have the same size and shape from the viewpoint of reducing uneven brightness in the light emitting element. Since the exposed portion 11b is a region that does not have the light emitting layer 11a, by regularly arranging a plurality of exposed portions of similar size, unevenness in the light emitting area and the amount of current supplied can be suppressed. be able to. As a result, uneven brightness can be suppressed in the entire light emitting element.
The total area of the exposed portions 11b arranged inside the edge of the semiconductor stack 11 is preferably 30% or less, and preferably 25% or less, of the planar area of the semiconductor stack 11. By setting the total area of the exposed portions 11b to 30% or less of the planar area of the semiconductor stack 11, it is possible to balance the current supply to the first semiconductor layer 11n and the second semiconductor layer 11p, and the supplied power can be It is possible to suppress unevenness in brightness due to bias.
（光反射性電極１５）
光反射性電極１５は、第２半導体層１１ｐ上に設けられ、第２半導体層１１ｐと電気的に接続されている。光反射性電極１５は、第２半導体層１１ｐの上面に直接配置されている。
図１Ａから１Ｃ及び１Ｅに示すように、光反射性電極１５は、その外縁１５ａが、平面視において第２半導体層１１ｐの外縁１１ｃよりも内側に配置されている。平面視において、光反射性電極１５の全ては、第２半導体層１１ｐ上に配置されている。発光素子の光取り出し効率を向上させるためには、光反射性電極１５は第２半導体層１１ｐの上面のより広い面積に形成されることが好ましい。このことから、例えば、光反射性電極１５の外縁１５ａと第２半導体層１１ｐの外縁１１ｃとの距離は、数μｍから数十μｍの範囲が挙げられ、１μｍから２０μｍの範囲が好ましく、５μｍから１５μｍの範囲がさらに好ましい。別の観点から、光反射性電極１５の外縁１５ａは、第２半導体層１１ｐの中心（又は重心）を基準として、第２半導体層１１ｐの外縁１１ｃから、０．１％から２０％の範囲で縮小した位置に配置されていればよく、０．５％から１５％の範囲で縮小した位置に配置されていることが好ましい。また、光反射性電極１５の平面積は、第２半導体層１１ｐの平面積の６０％以上とすることが好ましく、７０％以上がより好ましい。
光反射性電極１５としては、銀、アルミニウム又はこれらのいずれかの金属を主成分とする合金を用いることができ、特に発光層から発せられる光に対して高い光反射性を有する銀又は銀合金がより好ましい。
光反射性電極１５が銀を含む場合には、銀のマイグレーションを抑制するために、その上面、好ましくは、上面及び側面を被覆する保護層１７を設けてもよい。保護層１７としては、絶縁性部材を用いることができる。絶縁性部材としては、後述する絶縁膜１２と同様の材料が挙げられるが、なかでもＳｉＮを用いることが好ましい。保護層１７の厚みは、効果的に銀のマイグレーションを抑制するために、数百ｎｍ～数μｍ程度であることが好ましい。保護層１７には光反射性電極１５の上方に開口が設けられ、その開口にて光反射性電極１５と後述する第２電極とが電気的に接続される。なお、発光素子１０が第２半導体層１１ｐ上に光反射性電極１５及び保護層１７を有する場合、半導体積層体１１を覆う絶縁膜１２は光反射性電極１５及び保護層１７を覆い、かつ、第２電極１６の直下の領域に開口部１２ａを有し、この開口部１２ａにより第２電極１６と光反射性電極１５とが電気的に接続される。
光反射性電極１５は、発光層から出射される光を反射することができる厚みを有することが好ましい。光反射性電極１５の厚みは、例えば、２０ｎｍから１μｍの範囲が挙げられる。
(Light reflective electrode 15)
The light reflective electrode 15 is provided on the second semiconductor layer 11p and is electrically connected to the second semiconductor layer 11p. The light reflective electrode 15 is placed directly on the upper surface of the second semiconductor layer 11p.
As shown in FIGS. 1A to 1C and 1E, the outer edge 15a of the light reflective electrode 15 is arranged inside the outer edge 11c of the second semiconductor layer 11p in plan view. In plan view, all of the light reflective electrodes 15 are arranged on the second semiconductor layer 11p. In order to improve the light extraction efficiency of the light emitting element, the light reflective electrode 15 is preferably formed over a wider area of the upper surface of the second semiconductor layer 11p. From this, for example, the distance between the outer edge 15a of the light reflective electrode 15 and the outer edge 11c of the second semiconductor layer 11p is in the range of several μm to several tens of μm, preferably in the range of 1 μm to 20 μm, and preferably in the range of 5 μm to A range of 15 μm is more preferred. From another perspective, the outer edge 15a of the light reflective electrode 15 is within a range of 0.1% to 20% from the outer edge 11c of the second semiconductor layer 11p with respect to the center (or center of gravity) of the second semiconductor layer 11p. It suffices if it is placed at a position that is reduced, and preferably it is placed at a position that is reduced by 0.5% to 15%. Further, the planar area of the light reflective electrode 15 is preferably 60% or more, more preferably 70% or more, of the planar area of the second semiconductor layer 11p.
As the light-reflective electrode 15, silver, aluminum, or an alloy containing any of these metals as a main component can be used, and in particular, silver or a silver alloy that has high light reflectivity for light emitted from the light emitting layer. is more preferable.
When the light reflective electrode 15 contains silver, a protective layer 17 may be provided to cover its upper surface, preferably the upper surface and side surfaces, in order to suppress silver migration. As the protective layer 17, an insulating member can be used. Examples of the insulating member include the same materials as the insulating film 12 described later, but it is particularly preferable to use SiN. The thickness of the protective layer 17 is preferably about several hundred nm to several μm in order to effectively suppress silver migration. An opening is provided in the protective layer 17 above the light-reflecting electrode 15, and the light-reflecting electrode 15 and a second electrode to be described later are electrically connected through the opening. Note that when the light emitting element 10 has the light reflective electrode 15 and the protective layer 17 on the second semiconductor layer 11p, the insulating film 12 covering the semiconductor stack 11 covers the light reflective electrode 15 and the protective layer 17, and An opening 12a is provided in a region directly below the second electrode 16, and the second electrode 16 and the light reflective electrode 15 are electrically connected through this opening 12a.
It is preferable that the light reflective electrode 15 has a thickness capable of reflecting light emitted from the light emitting layer. The thickness of the light reflective electrode 15 is, for example, in the range of 20 nm to 1 μm.
（第１電極１８及び第２電極１６）
第１電極１８及び第２電極１６は、半導体積層体１１の上面側（つまり、半導体積層体１１の基板１３が設けられている側とは反対側）に配置されている。第１電極１８及び第２電極１６は、第１半導体層１１ｎ及び第２半導体層１１ｐと、それぞれ直接接触していてもよいし、上述した光反射性電極１５を介して電気的に接続されていてもよい。
(First electrode 18 and second electrode 16)
The first electrode 18 and the second electrode 16 are arranged on the upper surface side of the semiconductor stacked body 11 (that is, on the opposite side of the semiconductor stacked body 11 from the side where the substrate 13 is provided). The first electrode 18 and the second electrode 16 may be in direct contact with the first semiconductor layer 11n and the second semiconductor layer 11p, respectively, or may be electrically connected via the light reflective electrode 15 described above. It's okay.
第１電極１８及び第２電極１６は、例えば、Ａｕ、Ｐｔ、Ｐｄ、Ｒｈ、Ｎｉ、Ｗ、Ｍｏ、Ｃｒ、Ｔｉ、Ａｌ、Ｃｕ等の金属又はこれらの合金の単層膜又は積層膜によって形成することができる。具体的には、これら電極は、半導体層側からＴｉ／Ｒｈ／Ａｕ、Ｔｉ／Ｐｔ／Ａｕ、Ｗ／Ｐｔ／Ａｕ、Ｒｈ／Ｐｔ／Ａｕ、Ｎｉ／Ｐｔ／Ａｕ、Ａｌ-Ｃｕ合金／Ｔｉ／Ｐｔ／Ａｕ、Ａｌ-Ｓｉ-Ｃｕ合金／Ｔｉ／Ｐｔ／Ａｕ、Ｔｉ／Ｒｈなどの積層膜によって形成することができる。上述した第１電極１８及び第２電極１６の膜厚は、当該分野で用いられる電極の膜厚範囲であればよい。
第１電極１８の平面視形状は、半導体積層体１１の平面視形状が矩形の場合、同様に矩形又は略矩形であることが好ましい。第２電極１６の平面視形状は、半導体積層体１１の平面視形状が矩形の場合、同様に矩形又は略矩形であることが好ましい。１つの半導体積層体１１に設けられる第１電極１８及び第２電極１６は、平面視において、一方向に並行して交互に配置されていることが好ましい。例えば、平面視において、第１電極１８が第２電極１６を挟むように配置されていることが好ましい。
The first electrode 18 and the second electrode 16 are formed of, for example, a single layer film or a laminated film of metals such as Au, Pt, Pd, Rh, Ni, W, Mo, Cr, Ti, Al, Cu, or alloys thereof. can do. Specifically, these electrodes are Ti/Rh/Au, Ti/Pt/Au, W/Pt/Au, Rh/Pt/Au, Ni/Pt/Au, Al-Cu alloy/Ti/ It can be formed from a laminated film of Pt/Au, Al-Si-Cu alloy/Ti/Pt/Au, Ti/Rh, or the like. The thickness of the first electrode 18 and the second electrode 16 described above may be within the thickness range of electrodes used in the field.
When the planar view shape of the semiconductor laminate 11 is rectangular, the first electrode 18 preferably has a rectangular or substantially rectangular shape. When the planar view shape of the semiconductor laminate 11 is rectangular, the second electrode 16 preferably has a rectangular or substantially rectangular shape. The first electrodes 18 and the second electrodes 16 provided in one semiconductor stack 11 are preferably arranged alternately in parallel in one direction when viewed from above. For example, it is preferable that the first electrode 18 be arranged to sandwich the second electrode 16 in a plan view.
第１電極１８は、上述した半導体積層体１１の第２半導体層１１ｐ側に配置される露出部１１ｂと電気的に接続される。第１電極１８は複数の露出部１１ｂを一体的に覆い、複数の露出部１１ｂと接続されることが好ましく、全ての露出部１１ｂを一体的に覆い接続されることがより好ましい。従って、第１電極１８は、第１半導体層１１ｎ上のみならず、第２半導体層１１ｐの上方にも配置される。この場合、第１電極１８は絶縁膜１２を介して、露出部１１ｂを形成する孔の側面（つまり発光層１１ａ及び第２半導体層１１ｐの側面）及び第２半導体層１１ｐ上に配置される。 The first electrode 18 is electrically connected to the exposed portion 11b disposed on the second semiconductor layer 11p side of the semiconductor stack 11 described above. It is preferable that the first electrode 18 integrally cover the plurality of exposed parts 11b and be connected to the plurality of exposed parts 11b, and more preferably be integrally covered and connected to all the exposed parts 11b. Therefore, the first electrode 18 is arranged not only above the first semiconductor layer 11n but also above the second semiconductor layer 11p. In this case, the first electrode 18 is placed on the side surface of the hole forming the exposed portion 11b (that is, the side surface of the light emitting layer 11a and the second semiconductor layer 11p) and the second semiconductor layer 11p, with the insulating film 12 interposed therebetween.
第２電極１６は、上述した半導体積層体１１の第２半導体層１１ｐ上に配置され、第２半導体層１１ｐと電気的に接続される。第２電極１６は、光反射性電極１５を介して第２半導体層１１ｐ上に配置されることが好ましい。第２電極１６は、例えば、第１方向に長い形状であり、第１方向において光反射性電極１５と略同等の長さを有し、第２方向において半導体積層体１１の長さの５～２０％の長さが挙げられる。
第２電極１６は、例えば、第１方向に沿って設けられた第１電極１８の間に挟まれて配置されていることが好ましい。つまり、平面視において、第２電極１６は第２方向よりも第１方向に長い形状であり、第１電極１８は、第２電極１６を挟んで配置されていることが好ましい。この場合、第１電極１８は、第２電極１６の第１方向の中心線に対して線対称に配置されていることがより好ましい。これにより、発光素子１０を配線基板３２上にフリップチップ実装する際に第１電極１８及び第２電極１６にかかる応力の偏りを少なくすることができる。その結果、発光素子１０を配線基板に実装する際の実装精度が安定する。なお、第２電極１６の両側に配置された第１電極１８は、互いに電気的に接続されていてもよい。
The second electrode 16 is arranged on the second semiconductor layer 11p of the semiconductor stack 11 described above, and is electrically connected to the second semiconductor layer 11p. The second electrode 16 is preferably placed on the second semiconductor layer 11p with the light reflective electrode 15 interposed therebetween. The second electrode 16 has, for example, a long shape in the first direction, has approximately the same length as the light-reflective electrode 15 in the first direction, and has a length of 5 to 5 times the length of the semiconductor stack 11 in the second direction. A length of 20% is mentioned.
For example, it is preferable that the second electrode 16 is placed between the first electrodes 18 provided along the first direction. That is, in plan view, the second electrode 16 is preferably longer in the first direction than in the second direction, and the first electrode 18 is preferably disposed with the second electrode 16 interposed therebetween. In this case, it is more preferable that the first electrode 18 is arranged symmetrically with respect to the center line of the second electrode 16 in the first direction. Thereby, when the light emitting element 10 is flip-chip mounted on the wiring board 32, it is possible to reduce the uneven stress applied to the first electrode 18 and the second electrode 16. As a result, the mounting accuracy when mounting the light emitting element 10 on the wiring board is stabilized. Note that the first electrodes 18 placed on both sides of the second electrode 16 may be electrically connected to each other.
（絶縁膜１２）
絶縁膜１２は、半導体積層体１１の上面及び側面を被覆するとともに、露出部１１ｂの上方に開口部１２ａを有する。絶縁膜１２が半導体積層体１１を被覆し、かつ露出部１１ｂの上方に開口部１２ａを有することにより、絶縁膜１２の上面の広範囲に第１電極１８を形成することができる。開口部１２ａの大きさは、露出部１１ｂの大きさ、発光素子の大きさ等によって適宜設定することができる。
絶縁膜１２は、当該分野で公知の材料を、電気的な絶縁性を確保し得る材料及び厚みで形成されている。具体的には、絶縁膜１２には、金属酸化物及び金属窒化物等を用いることができ、例えば、Ｓｉ、Ｔｉ、Ｚｒ、Ｎｂ、Ｔａ、Ａｌからなる群より選択された少なくとも一種の酸化物又は窒化物を用いることが好ましい。
(Insulating film 12)
The insulating film 12 covers the top and side surfaces of the semiconductor stack 11 and has an opening 12a above the exposed portion 11b. Since the insulating film 12 covers the semiconductor stack 11 and has the opening 12a above the exposed portion 11b, the first electrode 18 can be formed over a wide range of the upper surface of the insulating film 12. The size of the opening 12a can be appropriately set depending on the size of the exposed portion 11b, the size of the light emitting element, etc.
The insulating film 12 is made of a material known in the art and has a thickness that ensures electrical insulation. Specifically, metal oxides, metal nitrides, etc. can be used for the insulating film 12, and for example, at least one oxide selected from the group consisting of Si, Ti, Zr, Nb, Ta, and Al. Alternatively, it is preferable to use nitride.
（第１外部接続電極１９及び第２外部接続電極２０）
第１外部接続電極１９は第１電極１８と電気的に接続される。第２外部接続電極２０は第２電極１６と電気的に接続される。
第１外部接続電極１９は、第１電極１８上に設けられる。つまり、第１電極１８と電気的に接続されるように配置されている。第１外部接続電極１９は、第２半導体層１１ｐの上方において、絶縁膜１２の上面に設けられた第１電極１８上に設けられている。第１外部接続電極１９は、平面視において、露出部１１ｂとは離間して配置されている。第１外部接続電極１９は、第１方向に沿って配列された露出部１１ｂの列間において、第１方向に沿って複数配置されている。第１外部接続電極１９は、例えば、平面視、円形又は楕円形、多角形あるいはこれらに近い形状とすることができる。第１外部接続電極１９は、それらの一部又は全てが異なる大きさ及び形状であってもよい。第１外部接続電極１９のうち、少なくとも同じ第１方向に沿って配置される複数の第１外部接続電極１９は大きさ及び形状が同じであることが好ましい。第１外部接続電極１９は、第１方向に沿って配列する露出部１１ｂの列間ごとに複数配置されることが好ましい。
平面視において、第１外部接続電極１９と露出部１１ｂとが重ならないため、後述する発光素子の配線基板３２への実装の際に、実装時に生じる負荷による露出部１１ｂ近傍の絶縁膜及び電極の破損を回避することができる。
平面視において、第１外部接続電極１９と露出部１１ｂとの間の距離は、例えば、半導体積層体１１の一辺の長さの０．１％から２％の距離とすることが挙げられる。第１外部接続電極１９と露出部１１ｂとの間の距離は、具体的には、１０μｍから２００μｍとすることが好ましい。
第２外部接続電極２０は、第２電極１６上に設けられる。上述したように、第２方向において第１電極１８が第２電極１６を挟むように配置されている場合には、平面視において、第２外部接続電極２０の両側に、第１外部接続電極１９が配置されていることが好ましい。
第１外部接続電極１９及び第２外部接続電極２０の平面形状及び大きさは、当該分野で通常用いられる程度に設定することができる。第１外部接続電極１９または第２外部接続電極２０の平面形状は、例えば、平面視、円形、楕円形、四角形及び六角形等の多角形、これらに近似する形状等が挙げられる。平面視における第１外部接続電極１９及び第２外部接続電極２０の最大幅は、例えば、１０μｍから３００μｍの範囲とすることが好ましく、２０μｍから２００μｍの範囲とすることがさらに好ましい。
第１外部接続電極１９及び第２外部接続電極２０の厚みは、当該分野で通常用いられている程度に設定することができる。第１外部接続電極１９及び第２外部接続電極２０の厚みは、例えば、１０μｍから１００μｍの範囲の厚みが挙げられる。第１外部接続電極１９及び第２外部接続電極２０の上面は、例えば、第２半導体層１１ｐの表面からの高さが同じ位置に配置されていることが好ましい。
第１外部接続電極１９及び第２外部接続電極２０は、金、銀、銅、錫、白金、亜鉛、ニッケル、アルミニウム又はこれらの合金により、単層又は積層構造で形成することができる。第１外部接続電極１９及び第２外部接続電極２０は、腐食防止及びＡｕ－Ｓｎ共晶半田などのＡｕ合金系の接着部材を用いた配線基板との接合性を高めるために、少なくとも最上層をＡｕで形成することが好ましい。
第１外部接続電極１９及び第２外部接続電極２０は、これらの材料を用いて、例えば、めっき法、スパッタリング法又は蒸着法とフォトレジスト法とを組合せた方法等により形成することができる。
例えば、第１外部接続電極１９及び第２外部接続電極２０をめっき法で形成する場合、Ａｌ、Ａｇ、Ａｌ合金及びＡｇ合金、Ｃｕ、Ａｕ、Ｎｉなどの金属の単層又は積層構造を用いることができる。
第１外部接続電極１９及び第２外部接続電極２０を半導体積層体１１に配置される複数の露出部１１ｂと離間させ、発光素子の表面に高密度に配置することが好ましい。これにより、発光素子１０に供給される電流密度が分散され、輝度むらが抑制される。さらに、発光素子１０の発光によって発生する熱を、第１外部接続電極１９及び第２外部接続電極２０を介して配線基板３２側へ逃がす放熱経路を増大させることができる。
(First external connection electrode 19 and second external connection electrode 20)
The first external connection electrode 19 is electrically connected to the first electrode 18 . The second external connection electrode 20 is electrically connected to the second electrode 16.
The first external connection electrode 19 is provided on the first electrode 18 . That is, it is arranged so as to be electrically connected to the first electrode 18. The first external connection electrode 19 is provided on the first electrode 18 provided on the upper surface of the insulating film 12 above the second semiconductor layer 11p. The first external connection electrode 19 is arranged apart from the exposed portion 11b in plan view. A plurality of first external connection electrodes 19 are arranged along the first direction between rows of exposed portions 11b arranged along the first direction. The first external connection electrode 19 can have, for example, a circular or elliptical shape, a polygonal shape, or a shape close to these in a plan view. Some or all of the first external connection electrodes 19 may have different sizes and shapes. Among the first external connection electrodes 19, at least a plurality of first external connection electrodes 19 arranged along the same first direction preferably have the same size and shape. It is preferable that a plurality of first external connection electrodes 19 be arranged between rows of exposed portions 11b arranged along the first direction.
In a plan view, the first external connection electrode 19 and the exposed portion 11b do not overlap, so when a light emitting element is mounted on the wiring board 32 (described later), the insulation film and electrode near the exposed portion 11b are damaged due to the load generated during mounting. Damage can be avoided.
In plan view, the distance between the first external connection electrode 19 and the exposed portion 11b may be, for example, 0.1% to 2% of the length of one side of the semiconductor stack 11. Specifically, the distance between the first external connection electrode 19 and the exposed portion 11b is preferably 10 μm to 200 μm.
The second external connection electrode 20 is provided on the second electrode 16. As described above, when the first electrode 18 is arranged to sandwich the second electrode 16 in the second direction, the first external connection electrode 19 is placed on both sides of the second external connection electrode 20 in plan view. It is preferable that the
The planar shape and size of the first external connection electrode 19 and the second external connection electrode 20 can be set to a degree commonly used in the field. Examples of the planar shape of the first external connection electrode 19 or the second external connection electrode 20 include polygons such as a circle, an ellipse, a quadrangle, and a hexagon in plan view, and shapes similar to these. The maximum width of the first external connection electrode 19 and the second external connection electrode 20 in plan view is preferably in the range of 10 μm to 300 μm, and more preferably in the range of 20 μm to 200 μm, for example.
The thickness of the first external connection electrode 19 and the second external connection electrode 20 can be set to a level commonly used in the field. The thickness of the first external connection electrode 19 and the second external connection electrode 20 is, for example, in the range of 10 μm to 100 μm. It is preferable that the upper surfaces of the first external connection electrode 19 and the second external connection electrode 20 are arranged at the same height from the surface of the second semiconductor layer 11p, for example.
The first external connection electrode 19 and the second external connection electrode 20 can be formed of gold, silver, copper, tin, platinum, zinc, nickel, aluminum, or an alloy thereof in a single layer or a laminated structure. The first external connection electrode 19 and the second external connection electrode 20 have at least the uppermost layer in order to prevent corrosion and improve bondability with a wiring board using an Au alloy-based adhesive member such as Au-Sn eutectic solder. Preferably, it is made of Au.
The first external connection electrode 19 and the second external connection electrode 20 can be formed using these materials, for example, by a plating method, a sputtering method, or a method combining a vapor deposition method and a photoresist method.
For example, when forming the first external connection electrode 19 and the second external connection electrode 20 by plating, a single layer or a multilayer structure of metals such as Al, Ag, Al alloy, Ag alloy, Cu, Au, and Ni may be used. I can do it.
It is preferable that the first external connection electrode 19 and the second external connection electrode 20 be spaced apart from the plurality of exposed portions 11b arranged in the semiconductor stacked body 11 and arranged in high density on the surface of the light emitting element. Thereby, the current density supplied to the light emitting element 10 is dispersed, and brightness unevenness is suppressed. Furthermore, it is possible to increase the heat dissipation path through which heat generated by light emission of the light emitting element 10 is released to the wiring board 32 side via the first external connection electrode 19 and the second external connection electrode 20.
（第１隔壁２１、４１及び第２隔壁２２）
第１隔壁２１は、図１Ａ及び１Ｄに示すように、第１電極１８上に配置され、平面視において複数の第１外部接続電極１９を取り囲む。上述したように、平面視において、第１外部接続電極１９が第２外部接続電極２０の両側に配置されている場合には、第１隔壁２１は、第２外部接続電極２０の両側で、それぞれ複数の第１外部接続電極１９を取り囲むように、２つの第１隔壁２１を含むことができる。
また、図２に示す発光素子４０のように、第１隔壁４１は、複数の第１外部接続電極１９を取り囲む限り、複数の第２外部接続電極２０の一部又は全部を、複数の第１外部接続電極１９とともに取り囲んでいてもよい。
第１隔壁２１、４１は、第１電極１８と接触していてもよいし、例えば、第１電極１８上に絶縁膜を設け、その絶縁膜を介して非接触で配置されていてもよい。第１電極１８と配線基板３２との導通経路を増加させるために、第１隔壁２１、４１は、第１電極１８と接触して配置されることが好ましい。第１隔壁２１、４１は、製造方法の簡略化の観点から、第１外部接続電極１９と同一工程によって形成することが好ましい。この場合、第１隔壁２１、４１及び第１外部接続電極１９は、同じ材料を含んで又は同じ材料によって形成されていることが好ましく、同じ金属材料によって形成されていることがより好ましい。
第１隔壁２１、４１は、平面視において、図１Ｂ、１Ｃ、１Ｅ及び図２に示すように、光反射性電極１５の外縁１５ａよりも内側に配置されていることが好ましい。言い換えると、第１隔壁２１、４１は、その全部が光反射性電極１５上に配置されていることが好ましい。また、第１隔壁２１、４１は、その底面が、同じ光反射性電極１５又は光反射性電極１５の上に配置されている同じ第１電極１８の上に配置されていることが好ましい。平面視において、第１隔壁２１、４１（例えば、第１隔壁２１、４１の外側面２１ａ、４１ａ）と外縁１５ａとの距離は、数μｍから数十μｍの範囲が挙げられ、１μｍから３０μｍの範囲とすることができる。
(First partition walls 21, 41 and second partition walls 22)
As shown in FIGS. 1A and 1D, the first partition 21 is arranged on the first electrode 18 and surrounds the plurality of first external connection electrodes 19 in a plan view. As described above, when the first external connection electrode 19 is arranged on both sides of the second external connection electrode 20 in plan view, the first partition 21 is arranged on both sides of the second external connection electrode 20, respectively. Two first partition walls 21 may be included to surround the plurality of first external connection electrodes 19 .
Furthermore, as in the light emitting element 40 shown in FIG. It may be surrounded together with the external connection electrode 19.
The first partition walls 21 and 41 may be in contact with the first electrode 18, or, for example, an insulating film may be provided on the first electrode 18 and the first partition walls 21 and 41 may be disposed in a non-contact manner through the insulating film. In order to increase the conduction path between the first electrode 18 and the wiring board 32, the first partition walls 21 and 41 are preferably placed in contact with the first electrode 18. From the viewpoint of simplifying the manufacturing method, the first partition walls 21 and 41 are preferably formed in the same process as the first external connection electrode 19. In this case, the first partition walls 21, 41 and the first external connection electrode 19 preferably contain or are made of the same material, and more preferably are made of the same metal material.
The first partition walls 21 and 41 are preferably arranged inside the outer edge 15a of the light reflective electrode 15, as shown in FIGS. 1B, 1C, 1E, and 2 in plan view. In other words, it is preferable that all of the first partition walls 21 and 41 be disposed on the light reflective electrode 15. Moreover, it is preferable that the bottom surfaces of the first partition walls 21 and 41 are disposed on the same light-reflective electrode 15 or the same first electrode 18 disposed on the light-reflective electrode 15. In plan view, the distance between the first partition walls 21, 41 (for example, the outer surfaces 21a, 41a of the first partition walls 21, 41) and the outer edge 15a ranges from several μm to several tens of μm, and ranges from 1 μm to 30 μm. It can be a range.
第２隔壁２２は、第１隔壁２１とは別に、平面視において、図１Ｄに示すように、複数の第２外部接続電極２０を取り囲むように配置されていることが好ましい。この場合、第２隔壁２２は、図１Ａ、１Ｂ及び１Ｃに示すように、第２電極１６上に配置することができる。第２隔壁２２は、第２電極１６と接触していてもよいし、例えば、第２電極１６上に絶縁膜を設け、その絶縁膜を介して非接触で配置されていてもよい。第２電極１６と配線基板３２との導通経路を増加させるために、第２隔壁２２は、第２電極１６と接触して配置されることが好ましい。第２隔壁２２は、製造方法の簡略化の観点から、第２外部接続電極２０と同一工程によって形成することが好ましい。この場合、第２隔壁２２及び第２外部接続電極２０は、同じ材料を含んで又は同じ材料によって形成されていることが好ましく、同じ金属材料によって形成されていることがより好ましい。
第２隔壁２２が配置される場合、図１Ａ、１Ｂ、１Ｅに示すように、第２隔壁２２は、平面視において、光反射性電極１５の外縁１５ａよりも内側に配置されていることが好ましい。言い換えると、第２隔壁２２は、その全部が光反射性電極１５上に配置されていることが好ましい。また、第２隔壁２２は、その底面が、同じ光反射性電極１５又は光反射性電極１５の上に配置されている同じ第２電極１６の上に配置されていることが好ましい。平面視において、第２隔壁２２（例えば、第２隔壁２２の外側面２２ａ）と外縁１５ａとの距離は、数μｍから数十μｍの範囲が挙げられ、１μｍから５０μｍの範囲とすることが好ましく、２０μｍから３０μｍの範囲とすることがより好ましい。
なお、第１隔壁２１、４１と外縁１５ａとの距離は、第２隔壁２２と外縁１５ａとの距離と同じでもよいが、異なっていてもよい。例えば、第１隔壁２１、４１と外縁１５ａとの距離は、第２隔壁２２と外縁１５ａとの距離よりも小さいことが好ましい。
It is preferable that the second partition 22 is arranged separately from the first partition 21 so as to surround the plurality of second external connection electrodes 20, as shown in FIG. 1D in a plan view. In this case, the second partition 22 can be placed on the second electrode 16, as shown in FIGS. 1A, 1B, and 1C. The second partition wall 22 may be in contact with the second electrode 16, or, for example, an insulating film may be provided on the second electrode 16 and the second partition wall 22 may be disposed in a non-contact manner via the insulating film. In order to increase the conduction path between the second electrode 16 and the wiring board 32, the second partition 22 is preferably placed in contact with the second electrode 16. From the viewpoint of simplifying the manufacturing method, the second partition 22 is preferably formed in the same process as the second external connection electrode 20. In this case, the second partition 22 and the second external connection electrode 20 preferably contain or are made of the same material, and more preferably are made of the same metal material.
When the second partition 22 is arranged, it is preferable that the second partition 22 is arranged inside the outer edge 15a of the light reflective electrode 15 in plan view, as shown in FIGS. 1A, 1B, and 1E. . In other words, it is preferable that the second partition 22 is entirely disposed on the light reflective electrode 15 . Further, it is preferable that the bottom surface of the second partition wall 22 is disposed on the same light-reflective electrode 15 or the same second electrode 16 disposed on the light-reflective electrode 15. In plan view, the distance between the second partition wall 22 (for example, the outer surface 22a of the second partition wall 22) and the outer edge 15a is in the range of several μm to several tens of μm, and preferably in the range of 1 μm to 50 μm. , more preferably in the range of 20 μm to 30 μm.
Note that the distance between the first partition walls 21, 41 and the outer edge 15a may be the same as the distance between the second partition wall 22 and the outer edge 15a, but may be different. For example, the distance between the first partition walls 21, 41 and the outer edge 15a is preferably smaller than the distance between the second partition wall 22 and the outer edge 15a.
第１隔壁２１、４１及び第２隔壁２２の平面形状及び大きさは、それらの材料等によって適宜調整することができる。第１隔壁２１、４１及び第２隔壁２２の平面形状は、環状が挙げられる。第１隔壁２１、４１及び第２隔壁２２の幅は、例えば、それぞれ、第１外部接続電極１９及び第２外部接続電極２０の幅よりも小さいことが好ましい。このように、第１隔壁２１、４１及び第２隔壁２２の幅が小さくすることで、実装時に第１外部接続電極１９及び第２外部接続電極２０よりも小さい負荷で接合が可能になる。したがって、実装時に第１隔壁２１、４１及び第２隔壁２２が第１外部接続電極１９及び第２外部接続電極２０による接合の妨げを抑制し、実装性を確保することができる。第１隔壁２１及び第２隔壁２２は、それぞれ全ての部分で同じ幅でもよいし、一部異なる幅であってもよい。具体的には、平面視において、第１隔壁２１及び第２隔壁２２の幅は、５μｍから５０μｍの範囲が挙げられる。
第１隔壁２１、４１及び第２隔壁２２の厚みは、例えば、１０μｍから１００μｍの範囲の厚みが挙げられ、１０μｍから３０μｍの範囲が好ましい。第１隔壁２１、４１及び第２隔壁２２の厚みは、それぞれ、第１外部接続電極１９及び第２外部接続電極２０と同じ厚みであってもよいし、異なる厚みであってもよい。なかでも、第１隔壁２１、４１の厚みは、第１外部接続電極１９の厚みよりも小さいことが好ましい。この場合、第１隔壁２１、４１の厚みは、第１外部接続電極１９の厚みよりも、５％～２０％の範囲で小さい厚みが挙げられる。また、第２隔壁２２の厚みは、第２外部接続電極２０の厚みよりも小さいことが好ましい。この場合、第２隔壁２２の厚みは、第２外部接続電極２０の厚みよりも、５％～２０％の範囲で小さい厚みが挙げられる。第１隔壁２１、４１及び第２隔壁２２の上面は、第２半導体層１１ｐの表面からの高さが同じ位置に配置されていることが好ましい。第１隔壁２１及び第２隔壁２２の上面は、それぞれ、第１外部接続電極１９及び第２外部接続電極２０の上面と、第２半導体層１１ｐ表面から同じ高さに配置されていてもよいし、異なる高さに配置されていてもよい。なかでも、第１隔壁２１、４１及び第２隔壁２２の上面は、それぞれ、第１外部接続電極１９及び第２外部接続電極２０の上面よりも、第２半導体層１１ｐの表面から低い高さ、つまり、第２半導体層１１ｐ側に配置していることが好ましい。これにより、発光素子を配線基板に実装する際、第１隔壁２１、４１及び／又は第２隔壁２２よりも、第１外部接続電極１９及び第２外部接続電極２０が配線基板に先に接触するために、発光素子の実装性を確保することができる。第１外部接続電極１９及び第２外部接続電極２０は、配線基板に圧着等により接合されることで厚みが小さくなる。そして、第１外部接続電極１９及び第２外部接続電極２０よりも厚みを小さく形成した第１隔壁２１、４１及び第２隔壁２２が配線基板と接触、または第１隔壁２１、４１及び第２隔壁２２と配線基板との隙間が小さくなる。従って、発光素子の実装性を確保しつつ、第１隔壁２１、４１及び第２隔壁２２を樹脂をせき止める部材として機能させることができる。
特に、第１隔壁２１、４１及び第２隔壁２２は、第１外部接続電極１９及び第２外部接続電極２０と同じ材料を含んで又は同じ材料によって、同一工程によって形成することが好ましい。
The planar shape and size of the first partition walls 21 and 41 and the second partition wall 22 can be adjusted as appropriate depending on their materials and the like. The planar shape of the first partition walls 21 and 41 and the second partition wall 22 may be annular. The widths of the first partition walls 21 and 41 and the second partition walls 22 are preferably smaller than the widths of the first external connection electrode 19 and the second external connection electrode 20, respectively, for example. In this way, by reducing the widths of the first partition walls 21 and 41 and the second partition wall 22, it becomes possible to bond with a smaller load than the first external connection electrode 19 and the second external connection electrode 20 during mounting. Therefore, during mounting, the first partition walls 21 and 41 and the second partition wall 22 can prevent the first external connection electrode 19 and the second external connection electrode 20 from interfering with the bonding, thereby ensuring mountability. The first partition wall 21 and the second partition wall 22 may have the same width in all parts, or may have different widths in some parts. Specifically, in plan view, the width of the first partition 21 and the second partition 22 is in a range of 5 μm to 50 μm.
The thickness of the first partition walls 21, 41 and the second partition wall 22 is, for example, in the range of 10 μm to 100 μm, preferably in the range of 10 μm to 30 μm. The first partition walls 21 and 41 and the second partition wall 22 may have the same thickness as the first external connection electrode 19 and the second external connection electrode 20, respectively, or may have different thicknesses. Among these, the thickness of the first partition walls 21 and 41 is preferably smaller than the thickness of the first external connection electrode 19. In this case, the thickness of the first partition walls 21 and 41 may be smaller than the thickness of the first external connection electrode 19 by 5% to 20%. Further, the thickness of the second partition 22 is preferably smaller than the thickness of the second external connection electrode 20. In this case, the thickness of the second partition 22 may be smaller than the thickness of the second external connection electrode 20 by 5% to 20%. It is preferable that the upper surfaces of the first barrier ribs 21 and 41 and the second barrier rib 22 are located at the same height from the surface of the second semiconductor layer 11p. The upper surfaces of the first partition 21 and the second partition 22 may be arranged at the same height as the upper surfaces of the first external connection electrode 19 and the second external connection electrode 20, respectively, from the surface of the second semiconductor layer 11p. , may be located at different heights. Among them, the upper surfaces of the first partition walls 21 and 41 and the second partition wall 22 are at a lower height from the surface of the second semiconductor layer 11p than the upper surfaces of the first external connection electrode 19 and the second external connection electrode 20, respectively. In other words, it is preferable to arrange it on the second semiconductor layer 11p side. As a result, when mounting a light emitting element on a wiring board, the first external connection electrode 19 and the second external connection electrode 20 come into contact with the wiring board earlier than the first partition walls 21, 41 and/or the second partition wall 22. Therefore, the mountability of the light emitting element can be ensured. The thickness of the first external connection electrode 19 and the second external connection electrode 20 is reduced by being bonded to the wiring board by pressure bonding or the like. Then, the first partition walls 21, 41 and the second partition wall 22, which are formed to be thinner than the first external connection electrode 19 and the second external connection electrode 20, come into contact with the wiring board, or the first partition walls 21, 41 and the second partition wall The gap between 22 and the wiring board becomes smaller. Therefore, the first partition walls 21 and 41 and the second partition wall 22 can function as members for blocking the resin while ensuring the ease of mounting the light emitting element.
In particular, it is preferable that the first barrier ribs 21 and 41 and the second barrier rib 22 include or be formed using the same material as the first external connection electrode 19 and the second external connection electrode 20, using the same process.
〔発光装置３０〕
本実施形態の発光装置３０は、図３Ａ及び３Ｂに示すように、上面に配線パターン３１を有する配線基板３２と、配線パターン３１上に、複数の第１外部接続電極１９及び複数の第２外部接続電極２０を用いて接続される発光素子１０と、発光素子１０と、第１隔壁２１の外側面２１ａとを被覆する被覆部材３３とを備える。
このような構成とすることにより、発光素子における第１隔壁２１が、発光素子と配線基板３２との間へ被覆部材３３を入り込ませず、第１隔壁２１の外側に被覆部材３３をせき止めることができる。よって、発光素子と配線基板３２との間に入り込んだ被覆部材３３が発光素子の熱によって膨張することによる発光素子の配線基板３２から浮き又は剥がれ等を効果的に防止することができる。
また、発光素子の外周の近傍で生じる発光素子からの光漏れを、第１隔壁２１の外側に配置された被覆部材３３によって、効果的に抑制する構造とすることができる。また、第１隔壁２１は、発光素子に設けられた光反射性電極１５の外縁１５ａよりも内側に配置されており、被覆部材３３が入り込まない領域については発光素子からの光を光反射性電極１５によって反射する構造としている。その結果、発光素子の光漏れを低減でき、光取り出し効率を維持しつつ、信頼性を向上させることができる。
[Light emitting device 30]
As shown in FIGS. 3A and 3B, the light emitting device 30 of this embodiment includes a wiring board 32 having a wiring pattern 31 on the upper surface, a plurality of first external connection electrodes 19 and a plurality of second external connection electrodes on the wiring pattern 31. It includes a light emitting element 10 that is connected using a connection electrode 20, and a covering member 33 that covers the light emitting element 10 and the outer surface 21a of the first partition 21.
With this configuration, the first partition wall 21 in the light emitting element prevents the covering member 33 from entering between the light emitting element and the wiring board 32, and blocks the covering member 33 from the outside of the first partition wall 21. can. Therefore, it is possible to effectively prevent the light emitting element from lifting or peeling off from the wiring board 32 due to expansion of the covering member 33 inserted between the light emitting element and the wiring board 32 due to the heat of the light emitting element.
Furthermore, the covering member 33 disposed outside the first partition wall 21 can effectively suppress light leakage from the light emitting element that occurs near the outer periphery of the light emitting element. Further, the first partition wall 21 is arranged inside the outer edge 15a of the light-reflecting electrode 15 provided on the light-emitting element, and in areas where the covering member 33 does not enter, the light from the light-emitting element is transferred to the light-reflecting electrode. 15 to reflect the light. As a result, light leakage from the light emitting element can be reduced, and reliability can be improved while maintaining light extraction efficiency.
（配線基板３２）
配線基板３２は、上面に配線パターン３１を有する。
配線基板３２の材料としては、例えば、樹脂やセラミックスなどの絶縁性部材、表面に絶縁性部材を形成した金属部材等が挙げられる。なかでも、基板の材料は、耐熱性及び耐候性の高いセラミックスを利用したものが好ましい。セラミックス材料としては、アルミナ、窒化アルミニウムなどが挙げられる。
配線パターン３１は、発光素子に電流を供給し得るものであればよく、当該分野で通常使用されている材料、厚み、形状等で形成されている。具体的には、配線パターン３１は、例えば、銅、アルミニウム、金、銀、プラチナ、チタン、タングステン、パラジウム、鉄、ニッケル等の金属又はこれらを含む合金等によって形成することができる。特に、配線基板３２の上面に配置される配線パターン３１の最表面の一部は、発光素子１０からの光を効率よく取り出すために、銀などの反射率の高い材料で覆われていることが好ましい。配線パターン３１は、電解めっき、無電解めっき、蒸着、スパッタ等によって形成される。
発光素子１０における第１外部接続電極１９及び第２外部接続電極２０と、配線パターン３１の接合は、例えば、超音波接合法を用いて接合することができる。また、接合部材として、金、銀、銅などのバンプ、銀、金、銅、プラチナ、アルミニウム、パラジウムなどの金属粉末と樹脂バインダを含む金属ペースト、錫－ビスマス系、錫－銅系、錫－銀系、金－錫系などの半田、低融点金属などのろう材等を用いてもよい。例えば、発光素子の配線基板３２への実装にＡｕを最表面に含む第１外部接続電極１９及び第２外部接続電極２０を用いる場合、配線パターン３１の最表面にＡｕを用いると、発光素子と基板との接合性が向上できる。
配線パターン３１は、配線基板３２の上面に正負一対のパターンを有していることが好ましい。このような配線パターン３１によって、発光素子１０における第１電極１８及び第２電極１６を、第１外部接続電極１９及び第２外部接続電極２０をそれぞれ介して接続することができる。
(Wiring board 32)
The wiring board 32 has a wiring pattern 31 on its upper surface.
Examples of the material of the wiring board 32 include an insulating member such as resin or ceramics, a metal member having an insulating member formed on the surface, and the like. Among these, it is preferable that the substrate is made of ceramics, which have high heat resistance and weather resistance. Examples of the ceramic material include alumina and aluminum nitride.
The wiring pattern 31 only needs to be capable of supplying current to the light emitting element, and is formed of a material, thickness, shape, etc. commonly used in the field. Specifically, the wiring pattern 31 can be formed of metals such as copper, aluminum, gold, silver, platinum, titanium, tungsten, palladium, iron, and nickel, or alloys containing these metals. In particular, a part of the outermost surface of the wiring pattern 31 arranged on the upper surface of the wiring board 32 may be covered with a highly reflective material such as silver in order to efficiently extract light from the light emitting element 10. preferable. The wiring pattern 31 is formed by electrolytic plating, electroless plating, vapor deposition, sputtering, or the like.
The first external connection electrode 19 and the second external connection electrode 20 in the light emitting element 10 and the wiring pattern 31 can be bonded using, for example, an ultrasonic bonding method. In addition, as bonding members, bumps made of gold, silver, copper, etc., metal pastes containing metal powders such as silver, gold, copper, platinum, aluminum, palladium, and resin binders, tin-bismuth-based, tin-copper-based, tin- Solder such as silver-based or gold-tin-based solder, brazing material such as low melting point metal, etc. may be used. For example, when using the first external connection electrode 19 and the second external connection electrode 20 containing Au on the outermost surface for mounting a light emitting element on the wiring board 32, if Au is used on the outermost surface of the wiring pattern 31, the light emitting element and the second external connection electrode 20 are used. Bondability with the substrate can be improved.
Preferably, the wiring pattern 31 has a pair of positive and negative patterns on the upper surface of the wiring board 32. Such a wiring pattern 31 allows the first electrode 18 and the second electrode 16 in the light emitting element 10 to be connected via the first external connection electrode 19 and the second external connection electrode 20, respectively.
（被覆部材３３）
被覆部材３３は、発光素子１０と、第１隔壁２１の外側面２１ａとを被覆する。つまり、被覆部材３３は、発光素子１０と配線基板３２及び／又は配線パターン３１との間において、少なくとも第１外部接続電極１９を被覆しない。
また、図１Ｃに示すように、複数の第２外部接続電極２０を取り囲む第２隔壁２２が、第１隔壁２１とは別に設けられている場合には、発光素子１０と、第１隔壁２１の外側面２１ａ、第２隔壁２２の外側面２２ａとを被覆する。つまり、被覆部材３３は、発光素子１０と配線基板３２及び／又は配線パターン３１との間において、第１外部接続電極１９及び第２外部接続電極２０を被覆しない。
これにより、発光素子１０と配線基板３２及び／又は配線パターン３１との間において、被覆部材３３が存在しないか、存在するとしても、極めて少量又は小面積を被覆する程度とすることができる。よって、発光素子１０の熱による被覆部材３３の熱膨張に起因する発光素子１０への応力負荷を低減することができる。その結果、発光素子１０の配線基板３２からの剥がれなどを有効に抑制することができる。
被覆部材３３は、図３Ｂ等に示すように、発光素子１０の第１隔壁２１の外側及び／又は第２隔壁２２の外側と、発光素子１０の側面を被覆することが好ましい。発光素子の側面は、後述するように、接着材（図３Ｂ中、３５）等の透光性の材料で一部被覆されることがあるため、この場合には、発光素子の側方の透光性の材料の表面を被覆することが好ましい。
(Coating member 33)
The covering member 33 covers the light emitting element 10 and the outer surface 21 a of the first partition 21 . That is, the covering member 33 does not cover at least the first external connection electrode 19 between the light emitting element 10 and the wiring board 32 and/or the wiring pattern 31.
Further, as shown in FIG. 1C, when the second partition wall 22 surrounding the plurality of second external connection electrodes 20 is provided separately from the first partition wall 21, the light emitting element 10 and the first partition wall 21 The outer surface 21a and the outer surface 22a of the second partition wall 22 are covered. That is, the covering member 33 does not cover the first external connection electrode 19 and the second external connection electrode 20 between the light emitting element 10 and the wiring board 32 and/or the wiring pattern 31.
Thereby, the covering member 33 does not exist between the light emitting element 10 and the wiring board 32 and/or the wiring pattern 31, or even if it exists, it can cover only a very small amount or a small area. Therefore, the stress load on the light emitting element 10 due to thermal expansion of the covering member 33 due to the heat of the light emitting element 10 can be reduced. As a result, peeling of the light emitting element 10 from the wiring board 32 can be effectively suppressed.
The covering member 33 preferably covers the outside of the first partition 21 and/or the outside of the second partition 22 of the light emitting element 10 and the side surface of the light emitting element 10, as shown in FIG. 3B and the like. As will be described later, the side surfaces of the light emitting element may be partially covered with a translucent material such as an adhesive (35 in FIG. 3B). Preferably, the surface of the photosensitive material is coated.
被覆部材３３は、光反射性、透光性、遮光性等を有する樹脂を用いることができる。具体的には、被覆部材３３は、樹脂に光反射性物質が含有された樹脂を用いることができる。被覆部材３３を構成する樹脂、光反射性物質等は、当該分野で通常使用されているもののいずれをも利用することができる。
例えば、樹脂としては、シリコーン樹脂、変性シリコーン樹脂、エポキシ樹脂、変性エポキシ樹脂、アクリル樹脂の１種以上を含む樹脂又はハイブリッド樹脂等が挙げられる。光反射性物質としては、酸化チタン、酸化ケイ素、酸化ジルコニウム、チタン酸カリウム、アルミナ、窒化アルミニウム、窒化ホウ素、ムライトなどが挙げられる。
被覆部材３３は、例えば、樹脂に光反射性物質を２０ｗｔ％以上含有することが好ましい。被覆部材３３は、例えば、射出成形、ポッティング成形、樹脂印刷法、トランスファーモールド法、圧縮成形などで成形することができる。
The covering member 33 can be made of resin having light reflecting properties, light transmitting properties, light blocking properties, and the like. Specifically, the covering member 33 can be made of a resin containing a light reflective substance. The resin, light-reflective material, etc. that constitute the covering member 33 can be any of those commonly used in the field.
For example, examples of the resin include resins or hybrid resins containing one or more of silicone resins, modified silicone resins, epoxy resins, modified epoxy resins, and acrylic resins. Examples of the light-reflective substance include titanium oxide, silicon oxide, zirconium oxide, potassium titanate, alumina, aluminum nitride, boron nitride, and mullite.
It is preferable that the covering member 33 contains, for example, 20 wt % or more of a light reflective substance in the resin. The covering member 33 can be molded, for example, by injection molding, potting molding, resin printing, transfer molding, compression molding, or the like.
（透光部材３４）
発光装置３０は、発光素子１０の上に透光部材３４を有することが好ましい。例えば、発光素子１０は第１電極１８及び第２電極１６を有する面を下面として配線パターン３１上にフリップチップ実装される場合、発光素子１０は、下面と反対側の上面を主な光取り出し面として、この上面と透光部材３４の下面とが接合される。
透光部材３４は、発光素子１０の上面を被覆し、発光素子１０から出射される光の５０％以上又は６０％以上、好ましくは７０％以上を透過させ、外部に放出することが可能な部材である。透光部材３４は、光反射性物質や、発光素子１０から出射される光の少なくとも一部を波長変換可能な蛍光体を含有することができる。
透光部材３４の下面は、発光素子１０の上面の面積の８０～１５０％程度の面積を有することが好ましい。透光部材３４の下面外縁は、発光素子の上面外縁と一致するか、上面外縁より内側又は外側のどちらかのみに位置していることが好ましい。透光部材３４の厚みは、例えば、５０μｍから３００μｍの範囲が挙げられる。
(Transparent member 34)
It is preferable that the light-emitting device 30 has a light-transmitting member 34 on the light-emitting element 10. For example, when the light emitting element 10 is flip-chip mounted on the wiring pattern 31 with the surface having the first electrode 18 and the second electrode 16 as the lower surface, the light emitting element 10 has the upper surface opposite to the lower surface as the main light extraction surface. As a result, this upper surface and the lower surface of the light-transmitting member 34 are joined.
The light-transmitting member 34 is a member that covers the upper surface of the light-emitting element 10 and is capable of transmitting 50% or more, or 60% or more, preferably 70% or more of the light emitted from the light-emitting element 10 and emitting it to the outside. It is. The light-transmitting member 34 can contain a light-reflecting substance or a phosphor capable of converting the wavelength of at least a portion of the light emitted from the light-emitting element 10.
The lower surface of the light-transmitting member 34 preferably has an area of about 80 to 150% of the area of the upper surface of the light emitting element 10. It is preferable that the outer edge of the lower surface of the light-transmitting member 34 coincide with the outer edge of the upper surface of the light emitting element, or be located either inside or outside of the outer edge of the upper surface. The thickness of the transparent member 34 is, for example, in the range of 50 μm to 300 μm.
透光部材３４は、例えば、樹脂、ガラス等により形成することができる。また、蛍光体を含有する透光部材３４は、例えば、蛍光体の焼結体、樹脂又はガラスに蛍光体を含有させたもの等が挙げられる。 The light-transmitting member 34 can be made of, for example, resin, glass, or the like. Further, examples of the light-transmitting member 34 containing a phosphor include a sintered body of a phosphor, a resin, or a glass containing a phosphor.
透光部材３４に含有させる蛍光体としては、例えば、発光素子１０として、青色光を発する発光素子又は紫外光を発する発光素子を用いる場合には、セリウムで賦活されたイットリウム・アルミニウム・ガーネット系蛍光体（ＹＡＧ：Ｃｅ）、セリウムで賦活されたルテチウム・アルミニウム・ガーネット系蛍光体（ＬＡＧ：Ｃｅ）、ユウロピウム及び／又はクロムで賦活された窒素含有アルミノ珪酸カルシウム系蛍光体（ＣａＯ－Ａｌ2Ｏ3－ＳｉＯ2：Ｅｕ）、ユウロピウムで賦活されたシリケート系蛍光体（例えば（Ｓｒ，Ｂａ）２ＳｉＯ4：Ｅｕ）、β サイアロン系蛍光体（例えばＳｉ6-zＡｌzＯzＮ8-z：Ｅｕ（０＜Ｚ＜４．２））、ＣＡＳＮ系蛍光体、ＳＣＡＳＮ系蛍光体等の窒化物系蛍光体、ＫＳＦ系蛍光体（Ｋ2ＳｉＦ6：Ｍｎ）、硫化物系蛍光体、量子ドット蛍光体等が挙げられる。これらの蛍光体と、青色光を発する発光素子又は紫外光を発する発光素子との組み合わせにより、所望の発光色の発光装置（例えば白色系の発光装置）を得ることができる。このような蛍光体を透光部材３４に含有させる場合、蛍光体の濃度を、例えば５～５０％程度とすることが好ましい。 As the phosphor contained in the light-transmitting member 34, for example, when a light-emitting element that emits blue light or a light-emitting element that emits ultraviolet light is used as the light-emitting element 10, yttrium-aluminum-garnet fluorescent material activated with cerium can be used. (YAG:Ce), cerium-activated lutetium-aluminum-garnet-based phosphor (LAG:Ce), europium- and/or chromium-activated nitrogen-containing calcium aluminosilicate phosphor (CaO-Al 2 O 3 -SiO 2 :Eu), silicate-based phosphors activated with europium (e.g. (Sr,Ba)2SiO 4 :Eu), β-sialon-based phosphors (e.g. Si 6-z Al z O z N 8-z :Eu) (0<Z<4.2)), CASN-based phosphor, nitride-based phosphor such as SCASN-based phosphor, KSF-based phosphor (K 2 SiF 6 :Mn), sulfide-based phosphor, quantum dot fluorescence Examples include the body. By combining these phosphors with a light emitting element that emits blue light or a light emitting element that emits ultraviolet light, a light emitting device that emits light of a desired color (for example, a white light emitting device) can be obtained. When such a phosphor is contained in the light-transmitting member 34, the concentration of the phosphor is preferably about 5 to 50%, for example.
透光部材３４は、発光素子１０の上面を被覆するように配置する場合、接着材３５を介して接合することができる。接着材は、例えば、エポキシ又はシリコーンのような周知の透光性を有する樹脂を用いることができる。この場合、接着材３５は、透光部材３４の下面と発光素子１０との間のみならず、発光素子１０の側面を被覆してもよい。また、透光部材３４と発光素子１０との接合には、圧着、焼結による接合法や、表面活性化接合、原子拡散接合、水酸基接合による直接接合法を用いてもよい。
発光装置３０は、任意に、保護素子３６等の別の素子、電子部品等を有していてもよい。例えば、保護素子３６は、図３Ｂに示すように、被覆部材３３及び／又は後述する第２被覆部材３７に埋設されていることが好ましい。
When the light-transmitting member 34 is disposed so as to cover the upper surface of the light-emitting element 10, it can be bonded via the adhesive 35. As the adhesive, for example, a well-known translucent resin such as epoxy or silicone can be used. In this case, the adhesive 35 may cover not only the space between the lower surface of the light-transmitting member 34 and the light-emitting element 10 but also the side surface of the light-emitting element 10. Further, the light-transmitting member 34 and the light emitting element 10 may be bonded together by a bonding method such as pressure bonding or sintering, or a direct bonding method such as surface activation bonding, atomic diffusion bonding, or hydroxyl group bonding.
The light emitting device 30 may optionally include other elements such as a protection element 36, electronic components, and the like. For example, as shown in FIG. 3B, the protection element 36 is preferably embedded in the covering member 33 and/or the second covering member 37 described below.
（第２被覆部材３７）
発光装置３０は、透光部材３４を有する場合、透光部材３４の側面の一部又は全部を被覆する第２被覆部材３７をさらに備えることが好ましい。第２被覆部材３７の上面は、例えば、透光部材３４の上面と面一又は略面一に配置されることが好ましい。また、第２被覆部材３７は、発光装置３０の外形の一部を構成することができる。
第２被覆部材３７は、被覆部材３３と同様の材料を利用して形成することができる。
(Second covering member 37)
When the light-emitting device 30 includes the light-transmitting member 34, it is preferable that the light-emitting device 30 further includes a second covering member 37 that covers part or all of the side surface of the light-transmitting member 34. It is preferable that the upper surface of the second covering member 37 be disposed flush with or approximately flush with the upper surface of the light-transmitting member 34, for example. Further, the second covering member 37 can constitute a part of the outer shape of the light emitting device 30.
The second covering member 37 can be formed using the same material as the covering member 33.
〔発光装置５０〕
発光装置５０では、図２に示すように、複数の第１外部接続電極１９のみならず、複数の第２外部接続電極２０をも取り囲む第１隔壁４１が設けられた発光素子４０を用いる。図４に示すように、上面に配線パターン５１を有する配線基板５２を用いて、配線パターン５１上に、発光素子４０を複数の第１外部接続電極１９及び複数の第２外部接続電極２０により実装する。
ここで用いる配線基板５２は、発光素子４０における第１隔壁４１が対向する部分に、配線パターン５１が配置されないか、配置されるとしても、その一部が配線基板５２内に埋設されている。このような配線基板５２を用いることにより、第１隔壁４１が発光素子４０の第１電極１８又は第２電極１６に接続されている場合においても、第１隔壁４１と配線パターン５１との導通が防止されるため、短絡を防止することができる。
その他の構成は、実質的に発光装置３０と同様である。
このような配線基板５２を用いた場合においても、発光素子４０と配線基板５２及び／又は配線パターン５１との間において、第１外部接続電極１９及び第２外部接続電極２０は、被覆部材３３に被覆されない。つまり、被覆部材３３は、第１隔壁４１の外側面４１ａを被覆し、第１隔壁４１の外側に配置されることで、発光素子の外周の近傍で生じる光漏れを抑制する効果を発揮する。
[Light emitting device 50]
The light emitting device 50 uses a light emitting element 40 provided with a first partition wall 41 that surrounds not only the plurality of first external connection electrodes 19 but also the plurality of second external connection electrodes 20, as shown in FIG. As shown in FIG. 4, using a wiring board 52 having a wiring pattern 51 on the upper surface, a light emitting element 40 is mounted on the wiring pattern 51 by a plurality of first external connection electrodes 19 and a plurality of second external connection electrodes 20. do.
In the wiring board 52 used here, the wiring pattern 51 is not arranged in the portion of the light emitting element 40 that faces the first partition wall 41, or even if it is arranged, a part thereof is buried in the wiring board 52. By using such a wiring board 52, even when the first partition 41 is connected to the first electrode 18 or the second electrode 16 of the light emitting element 40, electrical conduction between the first partition 41 and the wiring pattern 51 is maintained. Therefore, short circuits can be prevented.
The other configurations are substantially the same as the light emitting device 30.
Even when such a wiring board 52 is used, the first external connection electrode 19 and the second external connection electrode 20 are connected to the covering member 33 between the light emitting element 40 and the wiring board 52 and/or the wiring pattern 51. Not coated. That is, the covering member 33 covers the outer surface 41a of the first partition 41 and is placed outside the first partition 41, thereby exhibiting the effect of suppressing light leakage occurring near the outer periphery of the light emitting element.
〔発光装置６０〕
発光装置６０では、上述した発光装置５０と同様に、図２に示す発光素子４０を用いる。図５に示すように、上面に配線パターン６１を有する配線基板６２を用いて、配線パターン６１上に、発光素子４０を複数の第１外部接続電極１９及び複数の第２外部接続電極２０により実装する。
ここで用いる配線基板６２は、発光素子４０における第１隔壁４１が対向する配線パターン６１上に、被覆層６３が配置されている。この被覆層６３は、絶縁性の材料で形成されている。このような配線基板６２を用いることにより、第１隔壁４１が発光素子の電極に接続されている場合においても、第１隔壁４１と配線パターン６１との導通が防止されるため、短絡を防止することができる。
その他の構成は、実質的に発光装置３０と同様である。
このような配線基板６２を用いた場合においても、発光素子４０と配線基板６２及び／又は配線パターン６１との間において、第１外部接続電極１９及び第２外部接続電極２０は、被覆部材３３に被覆されない。つまり、被覆部材３３は、第１隔壁４１の外側面４１ａを被覆し、第１隔壁４１の外側に配置されることで、発光素子の外周の近傍で生じる光漏れを抑制する効果を発揮する。
[Light emitting device 60]
The light emitting device 60 uses the light emitting element 40 shown in FIG. 2 similarly to the light emitting device 50 described above. As shown in FIG. 5, using a wiring board 62 having a wiring pattern 61 on the upper surface, a light emitting element 40 is mounted on the wiring pattern 61 by a plurality of first external connection electrodes 19 and a plurality of second external connection electrodes 20. do.
In the wiring board 62 used here, a coating layer 63 is disposed on the wiring pattern 61 facing the first partition 41 of the light emitting element 40 . This covering layer 63 is made of an insulating material. By using such a wiring board 62, even when the first partition 41 is connected to the electrode of the light emitting element, electrical conduction between the first partition 41 and the wiring pattern 61 is prevented, thereby preventing short circuits. be able to.
The other configurations are substantially the same as the light emitting device 30.
Even when such a wiring board 62 is used, the first external connection electrode 19 and the second external connection electrode 20 are connected to the covering member 33 between the light emitting element 40 and the wiring board 62 and/or the wiring pattern 61. Not coated. That is, the covering member 33 covers the outer surface 41a of the first partition 41 and is placed outside the first partition 41, thereby exhibiting the effect of suppressing light leakage occurring near the outer periphery of the light emitting element.
本発明の発光素子は、照明用光源、各種インジケーター用光源、車載用光源、ディスプレイ用光源、液晶のバックライト用光源、センサー用光源、信号機、車載部品、看板用チャンネルレター等、種々の光源に使用することができる。 The light emitting element of the present invention can be used as a light source for illumination, a light source for various indicators, a light source for vehicles, a light source for displays, a light source for liquid crystal backlights, a light source for sensors, a traffic light, an in-vehicle component, a channel letter for signboards, etc. can be used.
１０ 発光素子
１１ 半導体積層体
１１ａ 発光層
１１ｂ 露出部
１１ｎ 第１半導体層
１１ｐ 第２半導体層
１１ｃ 外縁
１２ 絶縁膜
１２ａ 開口部
１３ 基板
１５ 光反射性電極
１５ａ 外縁
１６ 第２電極
１７ 保護層
１８ 第１電極
１９ 第１外部接続電極
２０ 第２外部接続電極
２１、４１ 第１隔壁
２１ａ、４１ａ 外側面
２２ 第２隔壁
２２ａ 外側面
３０、５０、６０ 発光装置
３１、５１、６１ 配線パターン
３２、５２、６２ 配線基板
３３ 被覆部材
３４ 透光部材
３５ 接着材
３６ 保護素子
６３ 被覆層
10 Light emitting element 11 Semiconductor laminate 11a Light emitting layer 11b Exposed portion 11n First semiconductor layer 11p Second semiconductor layer 11c Outer edge 12 Insulating film 12a Opening 13 Substrate 15 Light reflective electrode 15a Outer edge 16 Second electrode 17 Protective layer 18 First Electrode 19 First external connection electrode 20 Second external connection electrode 21, 41 First partition 21a, 41a Outer surface 22 Second partition 22a Outer surface 30, 50, 60 Light emitting device 31, 51, 61 Wiring pattern 32, 52, 62 Wiring board 33 Covering member 34 Transparent member 35 Adhesive 36 Protective element 63 Covering layer
Claims (12)
前記第２半導体層上に設けられ、前記第２半導体層と接続された光反射性電極と、
前記光反射性電極上に設けられた第２電極と、
前記半導体積層体及び前記光反射性電極を覆うとともに、前記複数の露出部の上方に開口部を有する絶縁膜と、
前記開口部にて前記第１半導体層と接続され、かつ一部が前記絶縁膜を介して前記第２半導体層上に配置された第１電極と、
前記第１電極上に配置された複数の第１外部接続電極と、
前記第２電極上に配置された複数の第２外部接続電極と、
前記第１電極上に配置され、平面視において前記複数の第１外部接続電極の全部を取り囲む１又は２つの第１隔壁とを備え、
前記光反射性電極の外縁は、平面視において前記第２半導体層の外縁よりも内側に配置されており、
前記第１隔壁は、平面視において前記光反射性電極の外縁よりも内側に配置されている発光素子。 A semiconductor laminate including a first semiconductor layer, a light emitting layer, and a second semiconductor layer in this order, wherein the first semiconductor layer is exposed from the second semiconductor layer to the upper surface side of the second semiconductor layer. a semiconductor laminate having a plurality of exposed parts;
a light reflective electrode provided on the second semiconductor layer and connected to the second semiconductor layer;
a second electrode provided on the light reflective electrode;
an insulating film that covers the semiconductor stack and the light reflective electrode and has an opening above the plurality of exposed parts;
a first electrode connected to the first semiconductor layer at the opening and partially disposed on the second semiconductor layer through the insulating film;
a plurality of first external connection electrodes arranged on the first electrode;
a plurality of second external connection electrodes arranged on the second electrode;
one or two first partitions disposed on the first electrode and surrounding all of the plurality of first external connection electrodes in a plan view;
The outer edge of the light-reflective electrode is located inside the outer edge of the second semiconductor layer in plan view,
In the light emitting element, the first partition wall is disposed inside the outer edge of the light reflective electrode in plan view.
前記第２隔壁の外縁は、平面視において前記光反射性電極の外縁よりも内側に配置されている請求項１に記載の発光素子。 Further, a second partition wall surrounding all of the plurality of second external connection electrodes is disposed,
The light emitting device according to claim 1, wherein an outer edge of the second partition wall is arranged inside an outer edge of the light reflective electrode in plan view.
前記第１隔壁は、前記第２外部接続電極の両側で、それぞれ前記複数の第１外部接続電極を取り囲む、２つの第１隔壁を含む請求項１又は２に記載の発光素子。 In plan view, the first external connection electrode is arranged on both sides of the second external connection electrode,
The light emitting device according to claim 1 or 2, wherein the first partition includes two first partitions, each surrounding the plurality of first external connection electrodes on both sides of the second external connection electrode.
前記配線パターン上に、前記複数の第１外部接続電極及び前記複数の第２外部接続電極により実装される請求項１～９のいずれか１つに記載の発光素子と、
前記発光素子と、前記第１隔壁の外側面とを被覆する被覆部材とを備える発光装置。 a wiring board having a wiring pattern on the top surface;
The light emitting element according to any one of claims 1 to 9 , which is mounted on the wiring pattern by the plurality of first external connection electrodes and the plurality of second external connection electrodes;
A light emitting device including the light emitting element and a covering member that covers the outer surface of the first partition.
平面視において、前記第２隔壁の両側で、それぞれ前記複数の第１外部接続電極を取り囲む２つの前記第１隔壁とを含み、
前記被覆部材は、前記第１隔壁の外側面及び前記第２隔壁の外側面を被覆する、請求項２を引用する請求項１０に記載の発光装置。 a second partition wall surrounding the plurality of second external connection electrodes;
In a plan view, two of the first partitions surround the plurality of first external connection electrodes on both sides of the second partition, respectively,
The light emitting device according to claim 10 , which refers to claim 2, wherein the covering member covers an outer surface of the first partition wall and an outer surface of the second partition wall.
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| JP2018107371A (en) | 2016-12-28 | 2018-07-05 | 日亜化学工業株式会社 | Light-emitting device and manufacturing method thereof |
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