JP7208563B2 - Light-emitting element and light-emitting device - Google Patents

Description

The present invention relates to light-emitting elements and light-emitting devices.

Conventionally, a semiconductor structure having an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer laminated so as to partially expose the n-type semiconductor layer, and a plurality of openings provided on the semiconductor structure. an insulating film, an n-electrode connected through an opening provided on the n-type semiconductor layer exposed from the light-emitting layer and the p-type semiconductor layer among the plurality of openings, and on the p-type semiconductor layer among the plurality of openings A light-emitting element has been proposed that includes a p-electrode connected through an opening provided in the polarizer, a p-side external connection portion connected to the p-electrode, and an n-side external connection portion connected to the n-electrode (for example, , Patent Document 1).

Special Table No. 2010-525586

In such a light-emitting element, it is preferable to increase the area for arranging the n-side external connection portion and the p-side external connection portion in order to improve heat dissipation. On the other hand, when bonding a light-emitting element having a large-area n-side external connection portion and p-side external connection portion to a substrate, it is necessary to increase the external force applied, which may damage the insulating film and electrodes. be. In addition, it is necessary to separate the n-side external connection portion and the p-side external connection portion in consideration of the spread of the bonding material due to bonding. As a result, it is not possible to sufficiently increase the area of the external connection portion itself, which can improve heat dissipation.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a light-emitting element and a light-emitting device capable of suppressing breakage of an insulating film, an electrode, etc. that occurs during bonding while improving heat dissipation. and

The present disclosure includes the following inventions.
(1) A semiconductor laminate having a rectangular planar shape and having a first semiconductor layer, a light emitting layer and a second semiconductor layer in this order, wherein the first semiconductor layer is exposed from the second semiconductor layer and the light emitting layer. a semiconductor laminate having a plurality of exposed portions surrounded by the second semiconductor layer in plan view;
an insulating film covering the semiconductor stack and having openings above the plurality of exposed portions;
a first electrode connected to the exposed portion at the opening and partly disposed on the second semiconductor layer via the insulating film;
a second electrode connected to the second semiconductor layer;
a first external connection portion connected to the first electrode and arranged apart from the exposed portion in plan view;
a second external connection portion connected to the second electrode;
In a plan view, the first external connection portion is positioned between the exposed portions in a first direction parallel to one side of the semiconductor stack, and includes a plurality of first portions arranged in the first direction, and a plurality of first portions arranged in the first direction. A plurality of second portions that are not located between the exposed portions and have a shape or size different from that of the first portion and are arranged in the first direction,
A plurality of the first portions are light emitting elements arranged between the exposed portions adjacent to each other in the first direction.
(2) a substrate having a plurality of wirings on its upper surface;
the above-described light-emitting element flip-chip mounted on the wiring via a plurality of first external connection portions and second external connection portions;
A light-emitting device comprising: the light-emitting element; the first external connection portion; the second external connection portion; and a covering member containing a light-reflective material covering the substrate.

According to the light-emitting element and the light-emitting device of one embodiment of the present invention, it is possible to suppress breakage of the insulating film, electrodes, and the like during bonding while improving heat dissipation.

1 is a plan view schematically showing a light emitting device according to Embodiment 1 of the present disclosure; FIG. FIG. 1B is a sectional view taken along line IB-IB in FIG. 1A; FIG. 1B is a cross-sectional view along the IC-IC line in FIG. 1A; 1 is a perspective view schematically showing a light emitting device according to an embodiment of the present disclosure; FIG. FIG. 2B is a sectional view along line IIB-IIB of FIG. 2A; 1 is a plan view schematically showing a substrate used in a light emitting device according to an embodiment of the present disclosure; FIG. 3B is an enlarged view of the main part of FIG. 3A; FIG. FIG. 4 is a plan view schematically showing a substrate used in a light emitting device according to another embodiment of the present disclosure; 3B is an enlarged view of a main part when the light emitting element of FIG. 1A is mounted on the substrate of FIG. 3A; FIG. FIG. 4 is a plan view schematically showing a light emitting device according to Embodiment 2 of the present disclosure; FIG. 3 is a plan view schematically showing a light emitting device according to Embodiment 3 of the present disclosure; FIG. 4 is a plan view schematically showing a light emitting device according to Embodiment 4 of the present disclosure; FIG. 10 is a plan view schematically showing a light-emitting device according to Embodiment 5 of the present disclosure; FIG. 10 is a plan view schematically showing a light emitting device according to Embodiment 6 of the present disclosure; FIG. 11 is a plan view schematically showing a light emitting device according to Embodiment 8 of the present disclosure; FIG. 12 is a plan view schematically showing a light emitting device according to Embodiment 9 of the present disclosure;

Since the drawings referred to in the following description schematically show the embodiments, there are cases where the scale and spacing of each member, the positional relationship, etc. are exaggerated, or the illustration of a part of the members is omitted. be. Also, the scale and spacing of each member may not match between the plan view and the cross-sectional view. In the following description, the same names and symbols basically indicate the same or homogeneous members or members having the same functions, and detailed description may be omitted as appropriate. In the specification and drawings of the present application, the first direction means a direction parallel to one side of the semiconductor stack, including the direction indicated by arrow F and the direction opposite thereto. Similarly, the second direction means a direction perpendicular to the first direction, including the direction indicated by arrow S and the direction opposite thereto.

[Light emitting element 10]
For example, as shown in FIGS. 1A to 1C, the light-emitting device 10 according to an embodiment of the present disclosure has a first semiconductor layer 13n, a light-emitting layer 13a, and a second semiconductor layer 13p in this order. It has a semiconductor laminate 13 having a plurality of exposed portions 13b where the first semiconductor layer 13n is exposed from the light emitting layer 13a. The light emitting element 10 covers the semiconductor stacked body 13 and has an insulating film 14 having openings 14a above the plurality of exposed portions 13b. and a first electrode 11 disposed on the second semiconductor layer 13p via the first electrode 11a. The light emitting element 10 includes a second electrode 12 connected to the second semiconductor layer 13p, a first external connection portion 1 connected to the first electrode 11 and arranged apart from the exposed portion 13b in plan view, It includes a second external connection portion 2 connected to the second electrode 12 .
The semiconductor laminate 13 has a rectangular planar shape. The exposed portions 13b are arranged to be exposed on the upper surface side of the second semiconductor layer 13p, and are surrounded by the second semiconductor layer 13p in plan view.
The first external connection portion 1 has a first portion 1-1 and a second portion 1-2. The first portions 1-1 are located between the exposed portions 13b adjacent to each other in the first direction F parallel to one side of the semiconductor laminate 13, and are arranged in a plurality in the first direction F. As shown in FIG. In other words, a plurality of first portions 1-1 are arranged between the exposed portions 13b and are separated from each other. The second portion 1-2 is not located between the exposed portions 13b in the first direction F. The second portion 1-2 has a planar shape different in shape or size from that of the first portion 1-1, and is arranged in a plurality in the first direction F. As shown in FIG.
Such a light-emitting element 10 is suitable for flip-chip mounting using the surface on which the first electrode 11 and the second electrode 12 and the first external connection portion 1 and the second external connection portion 2 are provided as a mounting surface. have a structure. The surface opposite to the mounting surface of the light emitting element 10 is the main light extraction surface.

As will be described later, in the light emitting element 10, since the planar areas of the plurality of portions that are the first external connection portion 1 are much smaller than the planar area of the light emitting element 10, the arrangement can be made dense. can. As a result, the total planar area of the first external connection portion 1 can be increased, and heat dissipation can be improved when the light emitting element 10 is connected to the wiring on the substrate. In addition, by arranging a plurality of first external connection portions 1 having a small planar area, it is possible to reduce the external force applied when connecting to the wiring on the substrate. damage can be suppressed. As a result, it is possible to improve the bondability while maintaining the reliability of the light emitting element 10 . Furthermore, a plurality of first external connection portions 1 are arranged between the exposed portions 13b, and the plurality of first external connection portions 1 arranged between the adjacent exposed portions 13b are separated from each other. Therefore, in the light-emitting device described later, when an uncured resin material that becomes the resin member 32 containing a light-reflecting material is poured between the light-emitting element 10 flip-chip mounted on the substrate and the substrate, , the resin member 32 can be easily arranged right under between the adjacent exposed portions 13b. As a result, light directed from the light emitting element 10 toward the substrate 23 can be reflected toward the light emitting element 10 by the resin member 32, so that the light extraction efficiency of the light emitting device can be improved.

(Semiconductor laminate 13)
The semiconductor laminate 13 is configured by laminating a first semiconductor layer 13n, a light emitting layer 13a and a second semiconductor layer 13p in this order. Such a semiconductor laminate 13 is normally formed on an insulating support substrate 15 such as a sapphire substrate. However, the light-emitting element 10 may be one from which the support substrate 15 is finally removed.
Various semiconductors such as III-V group compound semiconductors and II-VI group compound semiconductors can be used for the semiconductor laminate 13, for example. Specific examples include nitride-based semiconductor materials such as In _X Al _Y Ga _1-XY N (0≦X, 0≦Y, X+Y≦1), InN, AlN, GaN, InGaN, AlGaN , InGaAlN, or the like can be used. The film thickness and layer structure of each layer can be those known in the art.
The planar shape of the semiconductor laminate 13 may be, for example, a quadrangle or a partially missing shape, preferably a rectangle (square, rectangle, etc.). More preferably, the semiconductor laminate 13 is a rectangle that is short in the first direction F.
In a plan view, the semiconductor stacked body 13 has an outer peripheral portion (in FIG. 1A, 13no) may be further provided.

In one light emitting element, one semiconductor laminate 13 may be arranged on one supporting substrate 15, as shown in FIGS. 6 and 7, for example. As shown in FIGS. 1A, 4 and 5, one light-emitting element 10 may have two or more light-emitting portions in which at least the light-emitting layer 13a and the second semiconductor layer 13p are separated. Hereinafter, in one light-emitting element 10, the semiconductor laminate 13 that constitutes two or more light-emitting portions that are separated and arranged may be referred to as a first light-emitting portion, a second light-emitting portion, and the like (in FIG. 1A, 10X, 10Y). The planar shape of the first light-emitting portion and the second light-emitting portion may be a quadrangle, preferably a rectangle. Above all, it is more preferable that the planar shape of the first light emitting section and the second light emitting section is a rectangle having a short side along the first direction F. It is preferable that the first light emitting unit 10X and the second light emitting unit 10Y are arranged close to each other. In FIG. 1A, the shortest distance between the first light emitting unit 10X and the second light emitting unit 10Y indicated by the distance D3 is, for example, 30 μm or less. In addition, even between the light emitting portions, there is provided an outer peripheral portion where the first semiconductor layer 13n is exposed from the second semiconductor layer 13p and the light emitting layer 13a.

(Exposed portion 13b)
The light emitting layer 13a and the second semiconductor layer 13p provided on the upper surface of the light emitting layer 13a are provided in a predetermined region on the upper surface of the first semiconductor layer 13n. In other words, the second semiconductor layer 13p and the light emitting layer 13a do not exist in some regions on the first semiconductor layer 13n. In this manner, the first semiconductor layer 13n is exposed from the light emitting layer 13a and the second semiconductor layer 13p, and a region surrounded by the second semiconductor layer 13p in plan view is referred to as an exposed portion 13b. In other words, the semiconductor laminate 13 has a hole penetrating through the second semiconductor layer 13p and the light emitting layer 13a. In plan view, the plurality of holes provided in the semiconductor laminate 13 are arranged apart from each other. The side surface of the hole provided in the semiconductor laminate 13 includes the side surface of the first semiconductor layer 13n, the side surface of the second semiconductor layer 13p, and the side surface of the light emitting layer 13a. Moreover, a part of the first semiconductor layer 13n may be exposed on the side surface of the hole provided in the semiconductor laminate 13 .

The shape, size, position, and number of the exposed portions 13b can be appropriately set according to the intended size, shape, electrode shape, and the like of the light emitting element.
The shape of the exposed portion 13b includes, for example, a circular shape, an elliptical shape, a polygonal shape such as a triangular shape, a quadrilateral shape, and a hexagonal shape in plan view, and a circular shape is preferable. The plurality of exposed portions 13b may all have substantially the same planar shape and substantially the same size, or may have different planar shapes and sizes in whole or in part. By regularly arranging a plurality of exposed portions 13b having approximately the same size, it is possible to suppress unevenness in the current density distribution. As a result, luminance unevenness can be suppressed in the light-emitting element as a whole.
The size of the exposed portion 13b can be appropriately set according to the size of the semiconductor laminate, the desired output of the light emitting element, the brightness, and the like. In plan view, the exposed portion 13b preferably has a diameter of, for example, 5 μm or more and 30 μm or less. From another point of view, the diameter of exposed portion 13b is preferably 0.5% or more and 3% or less of one side of semiconductor stacked body 13 in plan view. The distance between adjacent exposed portions 13b is 1/15 to 1/4 of one side of the semiconductor laminate. The distance between adjacent exposed portions 13b is preferably greater than the diameter of exposed portion 13b. All the distances between adjacent exposed portions 13b may be the same, or part or all of them may be different. It is preferable that the distances between the adjacent exposed portions 13b are substantially the same from the viewpoint of suppressing the bias of the current density distribution. The distance between adjacent exposed portions 13b is the distance between the centers of exposed portions 13b in plan view.
In particular, the exposed portion 13b has a substantially circular shape in plan view, and has a diameter of, for example, 5 μm or more and 30 μm or less. It is preferable that they are arranged at an interval of 6 times or more.

The exposed portions 13b are preferably arranged regularly in one light emitting element. For example, it is preferable that a plurality of exposed portions 13b be arranged in a matrix. As a result, unevenness in current density distribution in the light-emitting element can be suppressed, and luminance unevenness can be suppressed. Specifically, it is preferable that they are regularly arranged in a plurality of rows along the first direction F. The first direction F here refers to a direction parallel to one side of the semiconductor stack 13 . For example, it is preferable that the plurality of exposed portions 13b be arranged in two or more rows along the first direction F. As shown in FIG. Moreover, it is preferable that the exposed portions 13b are arranged in a plurality of rows or more in a second direction S orthogonal to the first direction F as well. For example, the plurality of exposed portions 13b are preferably arranged in 2 to 15 rows in the second direction S. As shown in FIG. A plurality of exposed portions 13b are arranged in the first direction F and the second direction S, respectively, so that the first external connection portions 1, which will be described later, are arranged in the first direction F and the second direction S as exposed portions 13b. They can be spaced apart from each other between the columns and rows of the portion 13b.

The number of exposed portions 13b arranged along the first direction F is preferably two or more, and may be three or more, five or more, or seven or more. The number of exposed portions 13b arranged in the second direction S may be smaller or larger than the number of exposed portions 13b arranged in the first direction. The number of exposed portions 13b arranged in the second direction S is preferably larger than the number of exposed portions 13b arranged in the first direction.
The exposed portions 13b arranged along the first direction F preferably include rows arranged adjacent to the second electrodes 12, which will be described later, in plan view. The first external connection portion 1 is not arranged between the row of exposed portions 13b arranged adjacent to the second electrode 12 and the second electrode 12 .

A plurality of exposed portions 13 b are preferably arranged inside the semiconductor laminate 13 . In plan view, the total planar area of the exposed portions 13b arranged inside the outer edge of the semiconductor laminate 13 is 30% or less, 25% or less, 20% or less, 18% or less, or 15% of the area of the semiconductor laminate 13. Below, 10% or less is preferable. With such a range, it is possible to suppress luminance unevenness caused by a biased current density distribution in the semiconductor laminate 13 while ensuring the area of the light emitting layer 13a.
Further, the first semiconductor layer 13n may further include an outer periphery exposed portion 13c at the outer periphery of the second semiconductor layer 13p in plan view, where the first semiconductor layer 13n is exposed from the second semiconductor layer 13p and the light emitting layer 13a. good. As described above, when the semiconductor laminate 13 has the outer peripheral portion 13no that exposes the first semiconductor layer 13n, the outer peripheral exposed portion 13c may be arranged as part of the outer peripheral portion 13no. Further, when the semiconductor laminate 13 constitutes a plurality of light-emitting portions, the outer peripheral exposed portion 13c may be arranged between the light-emitting portions.
The exposed portion 13b and the outer peripheral exposed portion 13c are arranged symmetrically in the first direction F or the second direction S with respect to a bisector that bisects the area of the semiconductor laminate 13 or the area of the light emitting portion. preferably.

(insulating film 14)
The insulating film 14 covers the top and side surfaces of the semiconductor stack 13 . Moreover, the insulating film 14 has openings 14a above the plurality of exposed portions 13b. Furthermore, the insulating film 14 has an opening 14b above the second semiconductor layer 13p. The insulating film 14 is provided to prevent electrical connection between the first electrode 11 and the second semiconductor layer 13p and between the second electrode 12 and the first semiconductor layer 13n. Since the insulating film 14 covers the upper surface of the semiconductor stack 13 and has the opening 14a above the exposed portion 13b, the first electrode 11 extends over a wide area of the upper surface of the insulating film 14 covering the upper surface of the second semiconductor layer 13p. can be formed.
The insulating film 14 is preferably formed of a material known in the art with a material and thickness that can ensure electrical insulation. Specifically, the insulating film 14 is formed of at least one oxide or nitride selected from the group consisting of metal oxides and metal nitrides, such as Si, Ti, Zr, Nb, Ta, and Al. be able to. The insulating film may have a film thickness capable of ensuring insulation.

(First electrode 11 and second electrode 12)
The first electrode 11 and the second electrode 12 are arranged on the upper surface side of the semiconductor laminate 13 .
The first electrode 11 is connected to the exposed portion 13b at the opening 14a of the insulating film 14 above the exposed portion 13b. In this case, the first electrode 11 preferably covers the plurality of exposed portions 13b and is connected to each of the plurality of exposed portions 13b, and may cover all the exposed portions 13b and be connected to all the exposed portions 13b. more preferred. The first electrode is arranged not only on the first semiconductor layer 13n but also on the second semiconductor layer 13p. That is, the first electrode 11 is arranged on the side surface of the light emitting layer 13a, the side surface of the second semiconductor layer 13p, and the upper surface of the second semiconductor layer 13p with the insulating film 14 interposed therebetween.
In addition, when the semiconductor laminated body 13 is provided with the outer peripheral part 13no, it is preferable that the first electrode is connected to a part of the outer peripheral part 13no. Moreover, when the first semiconductor layer 13n includes the outer peripheral exposed portion 13c, the first electrode 11 is preferably connected to the outer peripheral exposed portion 13c.

The second electrode 12 is arranged on the second semiconductor layer 13p and connected to the second semiconductor layer 13p at the opening 14b of the insulating film 14 above the second semiconductor layer 13p.
The first electrode 11 and the second electrode 12 are not in contact with the first semiconductor layer 13n and the second semiconductor layer 13p, respectively, and are electrically connected via a conductive member such as a light-reflective electrode 16, which will be described later. may have been

As for the planar shape of the first electrode 11 and the second electrode 12, when the planar shape of the semiconductor laminate 13 is rectangular, similarly, the outer edge shape is preferably rectangular or substantially rectangular. It is preferable that the first electrodes 11 and the second electrodes 12 provided on one semiconductor laminate 13 are alternately arranged in the second direction S in plan view. For example, it is preferable that the second electrode 12 is arranged between the first electrodes 11 in plan view. In particular, when the semiconductor stacked body 13 is a rectangle having short sides along the first direction F, in a plan view, the second electrode 12 is a rectangle long in the first direction F, and the first electrode 11 is a rectangle extending in the first direction F. In the two directions S, it is preferable that they are arranged with the second electrode 12 interposed therebetween. However, when the second electrodes 12 are arranged between the first electrodes 11 in plan view, the first electrodes 11 may be connected to the second electrodes 12 laterally.
The first electrode 11 and the second electrode 12 are formed of single-layer films or laminated films of metals such as Au, Pt, Pd, Rh, Ni, W, Mo, Cr, Ti, Al, and Cu, or alloys thereof. can do. Specifically, the first electrode 11 and the second electrode 12 are Ti/Rh/Au, Ti/Pt/Au, W/Pt/Au, and Rh/Pt/Au stacked in order from the semiconductor stacked body 13 side. , Ni/Pt/Au, Al--Cu alloy/Ti/Pt/Au, Al--Si--Cu alloy/Ti/Pt/Au, and Ti/Rh. The film thickness of the first electrode 11 and the second electrode 12 may be any film thickness used in the relevant field. In addition, "Ti/Rh/Au" laminated in order from the semiconductor laminated body 13 side means that Ti, Rh, and Au are laminated in order from the semiconductor laminated body 13 side.

(Light reflective electrode 16)
The light emitting device 10 preferably has a light reflective electrode 16 interposed between the first electrode 11 and/or the second electrode 12 and the second semiconductor layer 13p.
As the light reflective electrode 16, Ag, Al, or an alloy containing any of these metals as a main component can be used. More preferably, alloys are used. The light-reflective electrode 16 preferably has a thickness that can effectively reflect the light emitted from the light-emitting layer 13a, for example, 100 nm to 500 nm. The larger the contact area between the light-reflective electrode 16 and the second semiconductor layer 13p, the better. Specifically, the total plane area of the light-reflective electrode 16 may be 50% or more, 60% or more, or 70% or more of the plane area of the semiconductor laminate. For the light-reflective electrode 16, it is preferable to use a metal material having a reflectance of, for example, 70% or more, preferably 80% or more, with respect to the peak wavelength of light from the light-emitting layer 13a.

When the light reflective electrode 16 contains silver, a protective layer 17 may be provided to cover the upper surface, preferably the upper surface and side surfaces, of the light reflective electrode 16 in order to prevent migration of silver. As the protective layer 17, the same material as the insulating film 14 described above can be used. As a material of the protective layer 17, it is preferable to use SiN, for example. Since a film made of SiN is easily formed as a dense film, it is excellent as a material for suppressing penetration of moisture. The thickness of the protective layer 17 may be set to 100 nm or more and 1 μm or less in order to effectively prevent migration of silver. When the protective layer 17 is made of an insulating member, the protective layer 17 has an opening above the light reflective electrode 16, so that the light reflective electrode 16 and the second electrode 12 can be electrically connected. When the light emitting device 10 has the light reflective electrode 16 and the protective layer 17 on the second semiconductor layer 13p, the insulating film 14 covering the semiconductor laminate 13 covers the light reflective electrode 16 and the protective layer 17, and An opening is provided in a region immediately below the second electrode 12, whereby the second electrode 12 and the light reflective electrode 16 are electrically connected.

(First external connection part 1 and second external connection part 2)
The first external connection portion 1 and the second external connection portion 2 are provided for connection with wiring to be described later.
The first external connection portion 1 is connected to the first electrode 11 . The first external connection portion 1 is provided on the first electrode 11 provided on the upper surface of the insulating film 14 above the second semiconductor layer 13p and connected to the first electrode 11 .
The first external connection portion 1 is arranged apart from the exposed portion 13b in plan view. In addition, when the outer peripheral exposed portion 13c is present, the first external connection portion 1 is also spaced apart from the outer peripheral exposed portion 13c.
A plurality of first external connection portions 1 are arranged on the first electrode 11 . The first external connection part 1 includes at least two parts, namely a first part 1-1 and a second part 1-2. A plurality of first portions 1-1 and second portions 1-2 are arranged along the first direction F, respectively.

The first portion 1-1 is located between the exposed portions 13b in the first direction F parallel to one side of the semiconductor laminate 13. As shown in FIG. For example, in plan view, two first portions 1-1 may be arranged so as to sandwich one exposed portion 13b. The first portion 1-1 is separated from the exposed portion 13b.
The distance between the first portion 1-1 and the exposed portion 13b in the first direction F may be, for example, 12 μm or more and 28 μm or less. By bringing the first portion 1-1 and the exposed portion 13b close to each other in this manner, the heat generated around the exposed portion 13b can be released efficiently. In addition, since the first portion 1-1 and the exposed portion 13b do not overlap in plan view, it is possible to suppress damage to the semiconductor laminate 13 around the exposed portion 13b during bonding.
The plurality of first portions 1-1 arranged between the exposed portions 13b are separated from each other. Between the adjacent exposed portions 13b, the first portions 1-1 that are separated from each other are preferably separated from each other by, for example, 16 μm or more. By setting such a distance, it is possible to avoid contact between the adjacent first external connection portions 1 even when the first external connection portions 1 spread during bonding. Then, the uncured resin material forming the resin member 32 can flow while suppressing the generation of voids between the first external connection portions 1 . As a result, it is possible to effectively prevent peeling of the light emitting element due to thermal expansion of the gas present between the light emitting element and the substrate.

The second portion 1-2 is not positioned between the exposed portions 13b in the first direction F, and has a planar shape different in shape or size from the first portion 1-1. However, the second portion 1-2 may be positioned between the exposed portions 13b in the second direction S. For example, in plan view, the two second portions 1-2 may be arranged so as to sandwich one exposed portion 13b. The second portion 1-2 is separated from the exposed portion 13b.

The number of first external connection portions 1, for example, the number of first portions 1-1 and second portions 1-2, can be appropriately set according to the number of exposed portions 13b formed in the semiconductor laminate 13. FIG. For example, the number of first portions 1-1 and second portions 1-2 may be two or more, such as three, four or more, for one exposed portion 13b. However, depending on the position of the exposed portion 13b, the number and/or shape of the first portions 1-1 and the second portions 1-2 may differ, and regardless of the position of the exposed portion 13b, the first portions 1- The shape and/or size of the 1 and second portions 1-2 may be different. For example, the first portion 1-1 and the first portion 1-1 are located at positions facing the outer edge of the semiconductor laminate 13, positions facing the second electrode 12, positions inside the semiconductor laminate 13, positions adjacent to the outer peripheral exposed portion 13c, and the like. The number, size and/or shape of the two portions 1-2 may be different, or only part of the number, size and/or shape of the first portion 1-1 and the second portion 1-2 may be can be different.
The first portion 1-1 and the second portion 1-2 may be arranged regularly or randomly as long as they are arranged as described above.

The shapes of the first portion 1-1 and the second portion 1-2 in plan view are, for example, polygons such as triangles and squares, fan shapes, semicircles, circles, ellipses, and torus shapes. There are various shapes, such as a shape with a part missing, a polygon with a curve in part, and the like. Among them, the shapes of the first portion 1-1 and the second portion 1-2 include a quadrangle, a quadrangle with a curved line on one side, a quadrangle with a partially chamfered corner, and a quadrangle with a curved line on one side. It is preferable to have a shape having a shape, a shape in which these are combined, or the like. For example, by making the shape of the first portion 1-1 and the second portion 1-2 rectangular, it is easier to arrange the first external connection portions 1 at higher density and at regular intervals.
Specifically, the first portion 1-1 may have a planar shape having a curved portion k on the side facing the exposed portion 13b, and the second portion 1-2 may have a rectangular planar shape. When the planar shape of the exposed portion 13b is circular, the curved portion k corresponding to the shape of the exposed portion 13b is provided on the side of the first portion 1-1 facing the exposed portion 13b. Therefore, the area of the first external connection portion 1 arranged in the same direction can be increased. This makes it possible to improve heat dissipation.

In addition to the first portion 1-1 and the second portion 1-2, the first external connection portion 1 includes a third portion 1-3, a fourth portion 1-4, a fifth portion 1-5 and an eighth portion 1. You may further have one or more of -8. The third portion 1-3 preferably has a plane area around the corner of the semiconductor laminate 13 larger than the plane areas of the first portion 1-1 and the second portion 1-2 in plan view. The plane area of the third portion 1-3 is preferably, for example, twice or more or three times or more the plane areas of the first portion 1-1 and the second portion 1-2. One third portion 1-3 may be arranged around one corner of the semiconductor laminate 13, two or more may be arranged, or one or more may be arranged around two or more corners. may have been By arranging the third portion 1-3 having a relatively large plane area around the corner of the semiconductor laminate 13, the third portion 1-3 can be used as a probe for checking the current and voltage during and after the manufacturing process. 3 can be easily contacted.
The fourth portion 1-4 is arranged adjacent to the outer peripheral exposed portion 13c or along the shape of the outer peripheral exposed portion 13c when the semiconductor laminate 13 includes the outer peripheral exposed portion 13c. One fourth portion 1-4 may be arranged for one outer peripheral exposed portion 13c, or two or more may be arranged adjacent to each other. It is preferable that one or more fourth portions 1-4 are arranged for each outer peripheral exposed portion 13c. Further, it is preferable that the fourth portion 1-4 has a planar shape having a curved portion r1 on the side facing the outer peripheral exposed portion 13c in plan view. By providing the curved portion r1 corresponding to the shape of the outer periphery exposed portion 13c on the side facing the outer periphery exposed portion 13c of the fourth portion 1-4, the first external connection portion 1 is arranged close to the outer periphery exposed portion 13c. area can be made wider. When entering a plurality of fourth portions 1-4, the curved portions r1 of the fourth portions 1-4 may have different shapes depending on the shape and position of the outer peripheral exposed portion 13c.

The fifth portion 1-5 is preferably provided adjacent to the second external connection portion 2 in the vicinity of the end portion of the second semiconductor layer 13p in the first direction F in plan view. The fifth portion 1-5 preferably has a planar shape including an inclined portion m inclined with respect to one side of the semiconductor laminate 13 on the side facing the second external connection portion 2 in plan view. The inclination angle of the inclined portion m with respect to one side of the semiconductor stacked body 13 is, for example, 45° or more and 60° or less. By providing the fifth portion 1-5 with the inclined portion m, it is possible to effectively prevent a short circuit with the wiring of the substrate 23, which will be described later. Only one fifth portion 1-5 may be arranged, or two or more may be arranged adjacent to each other. In this case, when two or more fifth portions 1-5 are arranged, the size and/or shape may be the same or different.
The shape, size, number, etc. of the third portion 1-3, the fourth portion 1-4 and the fifth portion 1-5 are the same as those of the first portion 1-3, except that the curved portion r1 and the inclined portion m described above are provided. 1 and the second portion 1-2.

The eighth portion 1-8 is arranged adjacent to the second portion 1-2, is not positioned between the exposed portions 13b in the first direction F, and has a shape or size different from that of the first portion 1-1. has a planar shape of The size of the eighth portion 1-8 can be set arbitrarily. The eighth portion 1-8 may be positioned between the exposed portions 13b in the second direction S. At least one eighth portion 1-8 is arranged in one light-emitting portion, and at least four eighth portions 1-8 are preferably arranged in one light-emitting element 10. FIG. In this embodiment, two eighth portions 1-8 are arranged in one light emitting portion. In particular, when the planar shape of the light emitting element 10 is a square, the eighth portion 1-8 is within an area of 1/9 or less including the corners of the square with respect to the total area of the light emitting element 10 (hereinafter referred to as " are sometimes referred to as "corner vicinity areas"). The corner vicinity region means one region obtained by dividing the entire region of the light emitting element 10 by the same area, for example, 9 or more. The planar shape of the eighth portion 1-8 is preferably circular or substantially circular.
By arranging the eighth portion 1-8 in such a manner, when the light emitting element 10 is arranged on a substrate having wiring and is bonded, the planar shape of the eighth portion 1-8 after bonding can be changed to the light emitting element 10. and wiring can be confirmed. In particular, by making the planar shape of the eighth portion 1-8 circular or substantially circular, the planar shape of the eighth portion 1-8 is quadrilateral because the eighth portion 1-8 collapses so as to expand concentrically. Compared to the case, it becomes easier to determine the amount by which the eighth portion 1-8 spreads after joining. In addition, by arranging the eighth portion 1-8 in the corner vicinity region where the first external connection portion 1 tends to be less likely to collapse than in the central region of the light emitting element 10 and determining the bonding, the eighth portion 1-8 in the light emitting element 10 is determined. 1. Determining unevenness of crushing of the external connection portion 1 is facilitated. This makes it possible to evaluate bondability with higher accuracy.

The total planar area of the first external connection portion 1 can be appropriately set depending on the size of the semiconductor laminate 13, the number and size of the exposed portions 13b, and the like. For example, the total plane area of the first external connection portions should be 40% or more of the plane area of the semiconductor stacked body 13, and preferably 70% or less. With such a range, it is possible to reduce the manufacturing cost while securing the heat dissipation property, in the case where the material forming the first external connection portion 1 is an expensive metal or the like.
For example, the first external connection parts 1 are preferably arranged at a density of 150/mm ² or more, and more preferably at a density of 150/mm ² or more and 400/mm ² or less. , more preferably arranged at a density of 200/mm ² or more and 300/mm ² or less. The distance between the first parts 1-1 adjacent to each other, the distance between the second parts 1-2 adjacent to each other, the distance between the first parts 1-1 and the second parts 1-2, and optionally the first parts 1 The distance between or between the -1 to fifth portions 1-5 is preferably 16 μm or more, more preferably 16 μm or more and 50 μm or less, and even more preferably 16 μm or more and 30 μm or less. With such an interval, for example, when the light emitting element is connected to the wiring on the substrate, the adjacent first external connection portions 1 are in contact with each other even if the planar area of the first external connection portions 1 and the like is widened. can be avoided. In addition, by setting such an interval, as will be described later, it becomes easy to insert the light-reflective resin member 32 constituting the light-emitting device between the first external connection portions 1 .

The plane area of one portion of the first external connection portion 1 can be appropriately set according to the size of the plane area of the semiconductor stacked body 13 . For example, when the size of the semiconductor laminate 13 in plan view is 0.8 mm to 1.2 mm×0.8 mm to 1.2 mm, the plane area of one portion of the first external connection portion 1 is 100 μm ² or more. 10,000 μm ² or less, preferably 500 μm ² or more and 8,000 μm ² or less. For example, the first portion 1-1, the second portion 1-2, and the fourth portion 1-4 are 500 μm ² or more and 1000 μm ² or less. Specifically, the first portion 1-1, the second portion 1-2 and the fourth portion 1-4 may have a planar area of 20 μm×40 μm or larger. The third portion 1-3 and the fifth portion 1-5 are 3000 μm ² or more and 7000 μm ² or less. Specifically, the third portion 1-3 and the fifth portion 1-5 may have a planar area of 60 μm×60 μm or larger.

The second external connection portion 2 is connected to the second electrode 12 .
A plurality of second external connection portions 2 are arranged on the second electrode 12 . The second external connection section 2 preferably includes, for example, a plurality of sixth portions 2-6 and a plurality of seventh portions 2-7.
The second external connection portion 2 is preferably arranged between the first external connection portions 1 in the second direction S. As shown in FIG.
The sixth portion 2-6 and the seventh portion 2-7 are, in plan view, for example, polygonal such as triangular and quadrangular, fan-shaped, semi-circular, circular, elliptical, ring-shaped, ring-shaped fan-shaped, and one of these shapes. Various shapes such as a shape with a missing part can be used.

A plurality of sixth portions 2-6 may be arranged on the second electrode 12 in a matrix. The seventh portion 2-7 is arranged on both sides of the plurality of sixth portions 2-6 in the first direction F, for example. The seventh portion 2-7 preferably has a planar area larger than that of the sixth portion 2-6. The seventh portion 2-7 has a shape that is long in the second direction S, and has a length that is shorter than that of the second electrode 12 in the second direction S. For example, one having a length of 70% or more and 90% or less of the length of the second electrode 12 in the second direction S can be mentioned. The sixth portions 2-6 may each have different sizes and/or shapes, or they may be the same. Each of the seventh portions 2-7 may have different sizes and/or shapes, or they may be the same. For example, it is preferable that the seventh portions 2-7 arranged on both sides of the plurality of sixth portions 2-6 in the first direction F have planar shapes different in shape or size from each other. Specifically, in plan view, the seventh portion 2-7 arranged adjacent to one end of the semiconductor laminate 13 in the first direction F has a missing corner on the side facing the one end of the semiconductor laminate 13. One having a cutout portion t is exemplified. For example, the chipped portion t may be inclined at 45° or more and 60° or less with respect to one side of the semiconductor stacked body 13 . The plane area of the seventh portion 2-7 is preferably larger than the plane area of the third portion 1-3 of the first external connection portion 1. FIG. For example, the plane area of the seventh portion 2-7 may be 120% or more and 250% or less, preferably 130% or more and 200% or less, of the plane area of the third portion 1-3. Specifically, when the plane area of the third portion 1-3 is 60 μm×60 μm or larger (for example, 60 μm×88 μm), the plane area of the seventh portion 2-7 is 65 μm×65 μm. Or a plane area larger than that (65 μm×130 μm). The plane area of the seventh portion 2-7 is preferably larger than the plane area of the sixth portion 2-6. By arranging such a seventh portion 2-7 having a relatively large plane area at one end of the semiconductor laminate 13, a probe for current/voltage testing can be attached to the seventh portion 2-7 during and after the manufacturing process. can be easily contacted.

The distance between the sixth portions 2-6 adjacent to each other, the distance between the seventh portions 2-7 adjacent to each other, and the distance between the sixth portions 2-6 and the seventh portions 2-7 are 16 μm or more. It is preferably 50 μm or less, more preferably 16 μm or more and 30 μm or less. With such an interval, it is possible to prevent the second external connection portions 2 from coming into contact with each other when the light emitting element is connected to the wiring on the substrate, as described above. However, the intervals between the sixth portions 2-6 adjacent to each other, the intervals between the seventh portions 2-7 adjacent to each other, and the intervals between the sixth portions 2-6 and the seventh portions 2-7 may not all be the same.
The sixth portion 2-6 and the seventh portion 2-7 may be arranged regularly or randomly in the first direction F as long as the arrangement described above is satisfied. Also, the sixth portion 2-6 and the seventh portion 2-7 may differ in shape and/or size depending on the location on the semiconductor laminate 13. FIG. For example, the size of the second external connection part 2 can be 80% or more and 500% or less, 80% or more and 200% or less, or 80% or more and 150% or less of the first external connection part 1 .

The first external connection part 1 and the second external connection part 2 can be formed by methods known in the art. For example, a plating method, a sputtering method, a vapor deposition method, and the like can be used.
The first external connection part 1 and the second external connection part 2 can use a metal such as Al, Ag, Cu, Au, Ni or an alloy containing these metals in a single layer or a laminated structure.
The thickness of the first external connection portion 1 and the second external connection portion 2 can be appropriately set depending on the size of the light emitting element 10 and the like.
When the semiconductor laminate 13 has one semiconductor laminate 13 on one support substrate 15, the first external connection portion 1 and the second external connection portion 2 are arranged in the first direction F or the second direction S, respectively. , are preferably arranged symmetrically with respect to a bisector that bisects the area of the semiconductor laminate 13 or the area of the light emitting portion.
When the semiconductor laminate 13 has a plurality of light-emitting portions as described above, the arrangement of the first external connection portion 1 and the second external connection portion 2 in the first light-emitting portion and the first external connection portion in the second light-emitting portion The arrangement of the first and second external connection portions 2 is preferably symmetrical with respect to the bisector that bisects the area of the support substrate 15 .

[Light emitting device 33]
As shown in FIGS. 2A and 2B, a light-emitting device 33 according to an embodiment of the present disclosure includes a substrate 23 having a plurality of wirings 24, 25, and 26 on its upper surface, and the light-emitting element 10 described above (or a light-emitting element described later). , and the covering member 27 . Only one light emitting element 10 may be arranged on the substrate 23, or two or more thereof may be arranged. The light emitting element 10 is flip-chip mounted on the wirings 24 , 25 and 26 via the plurality of first external connection portions 1 and the plurality of second external connection portions 2 . Parts of the first wiring 24 and the third wiring 26 are exposed from the covering member 27 .

(substrate 23)
The substrate 23 can be made of, for example, an insulating member such as glass epoxy, resin, or ceramics, or a metal member having an insulating member formed on its surface. Among others, the substrate 23 is preferably made of ceramics having high heat resistance and weather resistance. Ceramic materials include alumina and aluminum nitride. Alternatively, a ceramic material may be laminated on a metal member such as aluminum.

The wirings 24, 25, and 26 may be of any type as long as they can supply current to the light emitting element 10, and are made of materials, thicknesses, shapes, etc. that are commonly used in the relevant field. Specifically, the wirings 24, 25, and 26 can be made of, for example, metals such as copper, aluminum, gold, silver, platinum, titanium, tungsten, palladium, iron, and nickel, or alloys containing these metals. can. In particular, the wirings 24, 25, and 26 formed on the upper surface of the substrate 23 are covered with a highly reflective material such as silver or gold on the outermost surface in order to efficiently extract the light from the light emitting element 10. is preferred. The wirings 24, 25, and 26 are formed by an electrolytic plating method, an electroless plating method, a vapor deposition method, a sputtering method, or the like. For example, when the outermost surfaces of the first external connection portion 1 and the second external connection portion 2 of the light emitting element 10 are made of gold, it is preferable that the outermost surfaces of the wirings 24, 25, and 26 are also made of Au. Thereby, the bondability between the light emitting element 10 and the wiring on the substrate 23 can be improved.

When flip-chip mounting is performed on the substrate 23 with the surface on which the first external connection portion 1 and the second external connection portion 2 of the light emitting element 10 are formed on the wirings 24, 25, and 26 as the bottom surface, the top surface on the side opposite to the bottom surface. is the main light extraction surface of the light emitting element 10 . The wirings 24 , 25 , 26 may be arranged not only on the top surface of the substrate 23 but also inside and/or on the bottom surface.
In particular, the light-emitting element 10 includes two light-emitting portions, for example, a first light-emitting portion 10X and a second light-emitting portion in which a first external connection portion 1 and a second external connection portion 2 are provided on a support substrate 15, respectively. When using the light emitting element 10 having the portion 10Y formed thereon, as shown in FIGS. 3A and 3B, wiring includes a first wiring 24 connected to the first external connection portion 1 of the first light emitting portion 10X and A second wiring 25 connected to the second external connection portion 2 of the portion 10X and the first external connection portion 1 of the second light emitting portion 10Y, and a third wiring connected to the second external connection portion 2 of the second light emitting portion 10Y. It is preferable to utilize one including wiring 26 . In the light-emitting element 10 , the first external connection portion 1 of the first light-emitting portion 10X is connected to the first wiring 24 , and the second external connection portion 2 of the first light-emitting portion 10X is connected to the second wiring 25 . In the light emitting element 10 , the first external connection portion 1 of the second light emitting portion 10Y is connected to the second wiring 25 and the second external connection portion 2 of the second light emitting portion 10Y is connected to the third wiring 26 .

In addition, in the second direction S, the portion of the second wiring 25 to which the second external connection portion 2 of the first light emitting portion 10X is connected is located between the first wirings 24, A portion of the second light emitting unit 10Y to which the second external connection unit 2 is connected is preferably positioned between the second wirings 25 . In plan view, the first wiring 24 has a recessed region in a part of the side facing the second wiring 25 in the first direction F, and the second wiring 25 faces the third wiring 26 in the first direction F. It has a recessed area in a part of the side to do. The second wiring 25 has a convex region in a part of the side facing the first wiring 24 in the first direction F, and the third wiring 26 has a convex region on the side facing the second wiring 25 in the first direction F. It has a convex area in part. The convex region of the second wiring 25 is positioned in the concave region of the first wiring 24 , and the convex region of the third wiring 26 is positioned in the concave region of the second wiring 25 .

For example, as shown in FIG. 3B, the concave region G of the first wiring 24 has inclined portions G1 and G2 at positions where the corners of the convex region of the second wiring 25 face each other. In addition, the concave region G of the first wiring 24 has inclined portions G3 and G4 at positions where the corners of the convex region of the third wiring 26 face each other. The convex region H of the second wiring 25 has inclined portions H1 and H2 at positions facing the inclined portions G1 and G2, the distances from the inclined portions G1 and G2 being constant. In addition, the convex region of the second wiring 25 has inclined portions H3 and H4 having constant distances from the inclined portions G3 and G4. The concave region of the second wire 25 and the convex region of the third wire 26 also preferably have a shape similar to the relationship between the concave region of the first wire 24 and the convex region of the second wire 25 . A distance D1 between the first wiring 24 and the second wiring 25 and a distance D2 between the second wiring 25 and the third wiring 26 may be 30 μm or more and 70 μm or less in plan view. Both of these distances D1 and D2 are preferably constant between the first wiring 24 and the second wiring 25 and between the second wiring 25 and the third wiring 26 .
With such wiring, two light emitting units can be connected in series. In addition, the distance between the two light-emitting portions can be further increased by making the wiring shape as described above and shortening the distance between the first wiring 24 and the second wiring 25 and the distance between the second wiring 25 and the third wiring 26. can be narrowed.

In particular, when the light emitting element 10 is arranged on the substrate 23 shown in FIG. 2 The external connection portion 2 faces the convex region of the third wiring 26 . Then, as shown in FIG. 3D, the notch t of the seventh portion 2-7 of the second external connection portion 2 is arranged corresponding to the inclined portions H1 and H2 in the convex region of the second wiring 25. As shown in FIG. Also, the inclined portions m of the fifth portion 1-5 of the first external connection portion 1 are arranged corresponding to the inclined portions G3 and G4 in the recessed region G of the first wiring 24. As shown in FIG. Thus, by making the shape of the fifth portion 1-5 of the first external connection portion 1 and/or the shape of the seventh portion 2-7 of the second external connection portion 2 correspond to the wirings 24 and 25, It becomes possible to avoid the occurrence of a short circuit between the two light emitting parts. Since FIG. 3D is a schematic diagram for explaining the relationship between the shape of the wiring and the arrangement of the first external connection portion 1 and the second external connection portion 2, all constituent members are indicated by solid lines.

The bonding between the first external connection portion 1 and the second external connection portion 2 and the wirings 24, 25, and 26 can be performed using, for example, an ultrasonic bonding method. When bonding the first external connection portion 1 and the second external connection portion 2 to the wirings 24, 25, and 26, heating and/or pressure may be applied while applying ultrasonic vibration.

(Coating member 27)
The covering member 27 covers the light emitting element 10 , the first external connection portion 1 , the second external connection portion 2 and the substrate 23 . That is, the covering member 27 covers the side surface of the light emitting element 10 , the space between the light emitting element 10 and the substrate 23 , and the side surfaces of the first external connection portion 1 and the second external connection portion 2 . It is preferable that the covering member 27 is also arranged on the lower surface of the light emitting element 10 directly below the exposed portion 13b. Moreover, as will be described later, when the light emitting device 33 has the translucent member 28 on the upper surface of the light emitting element 10 , the covering member 27 preferably covers the side surfaces of the translucent member 28 as well.

The covering member 27 can be made of a resin having light reflectivity, translucency, light shielding property, etc., or a resin containing a light reflective substance, a phosphor, a diffusing agent, a coloring agent, or the like in these resins. In particular, the covering member 27 preferably has light reflectivity and/or light shielding properties. Any of resins, light-reflecting substances, etc. that are commonly used in the relevant field can be used for the coating member 27 . Examples of resins include resins or hybrid resins containing one or more of silicone resins, modified silicone resins, epoxy resins, modified epoxy resins, and acrylic resins. Light-reflecting substances include titanium oxide, silicon oxide, zirconium oxide, potassium titanate, alumina, aluminum nitride, boron nitride, and mullite.

The amount of reflected light, the amount of transmitted light, etc. can be changed by the content of the light-reflecting substance or the like in the material forming the covering member 27 . The coating member 27 preferably contains, for example, 20 wt % or more of the light reflecting material.
The covering member 27 can be molded by, for example, injection molding, potting molding, transfer molding, compression molding, or the like.
Before arranging the covering member 27, for example, the side surface of the light emitting element 10, the side surface of the electrode of the light emitting element 10, the side surface of the first external connection portion 1 and the second external connection portion 2, and the space between the light emitting element 10 and the substrate 23 , the resin member 32 may be arranged. The resin member 32 preferably has light reflectivity. By providing such a resin member 32, the light traveling from the light emitting element 10 toward the substrate 23 can be reflected toward the light emitting element 10, thereby improving the light extraction efficiency.

(translucent member 28)
The light-emitting device 33 preferably has a translucent member 28 on the upper surface of the light-emitting element 10 . The translucent member 28 is arranged to cover the light extraction surface of the light emitting element 10 . The translucent member 28 is a member capable of transmitting 50% or more, or 60% or more, preferably 70% or more of the light emitted from the light emitting element 10 and emitting it to the outside. The translucent member 28 can contain phosphor capable of wavelength-converting at least part of the light emitted from the light emitting element 10 . Also, the translucent member 28 may contain a light diffusing material that diffuses the light emitted from the light emitting element 10 . The light-transmitting member 28 is preferably plate-shaped, and the thickness of the light-transmitting member 28 is, for example, 50 μm or more and 300 μm or less.

The translucent member 28 can be made of resin, glass, inorganic material, or the like, for example. Further, the light-transmitting member 28 containing a phosphor includes a sintered body obtained by sintering a phosphor, a resin, glass, or other inorganic substance containing a phosphor. Moreover, the thing which formed the resin layer containing fluorescent substance on the surface of molded bodies, such as a tabular resin, glass, and an inorganic substance, may be used.

As the phosphor to be contained in the translucent member 28, an yttrium-aluminum-garnet-based phosphor (eg, Y3 ₍ Al, Ga) _5O12 :Ce), a lutetium-aluminum-garnet-based phosphor (eg _{, Lu3} (Al, Ga) ₅ O ₁₂ :Ce), terbium-aluminum-garnet-based phosphors (e.g., Tb ₃ (Al, Ga) ₅ O ₁₂ :Ce), β-sialon-based phosphors (e.g., (Si, Al) ₃ (O, N) ₄ :Eu), an α-based SiAlON phosphor (eg, Ca(Si, Al) ₁₂ (O, N) ₁₆ :Eu), a CASN-based phosphor (eg, CaAlSiN ₃ :Eu), or SCASN Nitride-based phosphors (e.g., (Sr, Ca)AlSiN ₃ :Eu), KSF-based phosphors (e.g., K ₂ SiF ₆ :Mn), KSAF-based phosphors (e.g., K ₂ (Si , Al)F6:Mn) or MGF _- based phosphors (e.g., _{3.5MgO.0.5MgF2.GeO2} :Mn) and other fluoride-based phosphors, phosphors having a perovskite structure (e.g., CsPb(F, Cl, Br, I) ₃ ), or quantum dot phosphors (eg, CdSe, InP, AgInS ₂ or AgInSe ₂ ). By combining these phosphors with a blue light-emitting element or an ultraviolet light-emitting element, a light-emitting device with a desired emission color can be obtained. When such a phosphor is contained in the translucent member 28, the content of the phosphor is preferably 5 wt % or more and 50 wt % or less, for example.

The translucent member 28 is joined so as to cover the light extraction surface of the light emitting element 10 . The translucent member 28 and the light emitting element 10 can be joined directly or via an adhesive. As the adhesive, for example, one using translucent resin material such as epoxy or silicone can be used. A direct bonding method such as pressure bonding, sintering, surface activated bonding, atomic diffusion bonding, or hydroxyl group bonding may be used to bond the translucent member 28 and the light emitting element 10 .
A coating layer 29 may be arranged on the upper surface of the light-transmitting member 28 for the purpose of protecting the light-transmitting member 28 and preventing light reflection. Examples of the coating layer 29 include an AR (Anti Reflection) layer and the like.

The light-emitting device 33 may optionally include other elements, such as protective elements, or electronic components. These elements and electronic parts are preferably embedded in the covering member 27 . Specifically, as shown in FIG. 3C, a protective element 31 that electrically connects the first wiring 24 and the third wiring 26 may be arranged.

Embodiment 1
As shown in FIGS. 1A to 1C, the light emitting device 10 of Embodiment 1 includes a semiconductor laminate 13, an insulating film 14, a first electrode 11 and a second electrode 12, a first external connection portion 1 and a second external connection part 2;
The semiconductor laminate 13 is configured by stacking a first semiconductor layer 13n, a light emitting layer 13a, and a second semiconductor layer 13p in this order on the support substrate 15 from the support substrate 15 side. The support substrate 15 is made of sapphire and has an uneven structure on its upper surface. The support substrate 15 has a substantially square shape in plan view, and has a side length of 1.1 mm, for example. The semiconductor laminate 13 is arranged side by side in the first direction F as a rectangular first light emitting portion 10X and a second light emitting portion 10Y having short sides along the first direction F. As shown in FIG. The first light emitting unit 10X and the second light emitting unit 10Y respectively include a first semiconductor layer 13n, a light emitting layer 13a and a second semiconductor layer 13p. The first semiconductor layer 13n has a plurality of exposed portions 13b exposed from the second semiconductor layer 13p and the light emitting layer 13a of the semiconductor stacked body 13 and surrounded by the second semiconductor layer 13p in plan view. The exposed portions 13b are circular in plan view and arranged in a matrix. Specifically, in each of the first light emitting unit 10X and the second light emitting unit 10Y, the exposed portions 13b are arranged in three rows along the first direction F and arranged in four rows along the second direction S. . The exposed portion 13b has a circular shape with a diameter of about 12 μm in plan view. The distance between adjacent exposed portions 13b is approximately 120 μm in the first direction F and the second direction S, respectively.
In a plan view, the semiconductor stacked body 13 includes an outer peripheral portion 13no exposing the first semiconductor layer 13n on the outer periphery, and the second semiconductor layer 13p and the light emitting layers 13a to 13n on the outer periphery of the second semiconductor layer 13p. is further provided with an outer periphery exposed portion 13c from which is exposed. The outer peripheral exposed portion 13c is arranged as a part of the outer peripheral portion 13no. Three outer periphery exposed portions 13c are arranged along the first direction F for each of the first light emitting portion 10X and the second light emitting portion 10Y, and are arranged at the same positions as the exposed portions 13b along the second direction.

As shown in FIGS. 1B and 1C, the semiconductor laminate 13 is covered with an insulating film 14 made of SiO ₂ . The insulating film 14 has openings 14a and 14b at least above the plurality of exposed portions 13b and above the region of the second semiconductor layer 13p to which the second electrode 12 is connected, respectively.
A light-reflective electrode 16 made of silver is arranged between the second semiconductor layer 13p and the first electrode 11 and/or the second electrode 12 in a cross-sectional view. A light reflective electrode 16 is arranged on substantially the entire upper surface of the second semiconductor layer 13p. The light-reflective electrode 16 is covered on its top and side surfaces with a protective layer 17 made of SiN or SiO ₂ .

The light-emitting element 10 includes a second electrode 12 connected to the second semiconductor layer 13p via the light-reflective electrode 16 on the upper surface side of the semiconductor laminate 13 . The second electrode 12 is arranged in a region including the center of each of the first light emitting portion 10X and the second light emitting portion 10Y of the light emitting element 10 in plan view. The planar view shape of the second electrode 12 is a rectangle having long sides along the first direction F, and is formed with a size of 180 μm×460 μm.
The first light-emitting unit 10X and the second light-emitting unit 10Y each include the first electrodes 11 arranged to sandwich the second electrode 12 in the second direction S in plan view. The first electrode 11 is connected to the exposed portion 13b at the opening 14a of the insulating film 14, and is formed on the second semiconductor layer 13p with the insulating film 14 interposed therebetween.

A first external connection portion 1 is arranged on the first electrode 11 . The first external connection portion 1 is separated from the exposed portion.
A plurality of the first external connection portions 1 are arranged, and the first portion 1-1, the second portion 1-2, the third portion 1-3, the fourth portion 1-4 and the fifth portion 1-5 are respectively arranged. Includes multiple.
The first portions 1-1 are arranged so as to sandwich one exposed portion 13b in the first direction F between two portions. Two first portions 1-1 are arranged separately between adjacent exposed portions 13b. The distance in the first direction F between the first portion 1-1 and the exposed portion 13b is, for example, 16 μm. The first portions 1-1 that are separated from each other are separated by, for example, 16 μm. The first portion 1-1 has a rectangular shape elongated in the second direction S and has a curved portion k on the side facing the exposed portion 13b. The curved portion k has a curved line corresponding to the planar shape of the exposed portion 13b. The first portion 1-1 has a size of 40 μm×20 μm, for example. Also, the first portion 1-1 facing the exposed portion 13b provided adjacent to the second electrode 12 has a plane area smaller than that of the above-described first portion 1-1.
The second portion 1-2 is arranged along the first direction F and has a planar shape different in shape and size from the first portion 1-1. For example, the second portion 1-2 is a rectangle elongated in the first direction F and has dimensions of 20 μm×40 μm. Eight second portions 1-2 are arranged in the first direction F, and three rows are arranged between the exposed portions 13b. The second portions 1-2 are arranged in four, three, or two rows between the exposed portion 13b and the outer periphery of the semiconductor laminate 13 in the second direction S. As shown in FIG. The second portion 1-2 arranged between the exposed portion 13b and the outer periphery of the semiconductor laminate 13 in the second direction S is a rectangle elongated in the first direction F and has a size of 30 μm×40 μm.

The third portion 1-3 is arranged in each of the first light emitting section 10X and the second light emitting section 10Y. The third portions 1-3 are arranged at four corners of the second semiconductor layer 13p in plan view. The size of the third portion 1-3 in plan view is, for example, 60 μm×88.5 μm.
One or two fourth portions 1-4 are arranged adjacent to the outer periphery exposed portion 13c arranged on the outer periphery of the semiconductor laminate 13 along the first direction F. As shown in FIG. Each of the fourth portions 1-4 is arranged adjacent to the outer circumference exposed portion 13c arranged on the outer circumference of the semiconductor laminate 13 along the second direction S. As shown in FIG. The fourth portion 1-4 arranged adjacent to the outer peripheral exposed portion 13c has a different curved portion r1, r2 or r3 on the side facing the outer peripheral exposed portion 13c. When two fourth portions 1-4 face one outer periphery exposed portion 13c arranged along the first direction F, the fourth portions 1-4 are arranged at the corners facing the rectangular outer periphery exposed portion 13c. It has a shape having a curved portion r1. When one fourth portion 1-4 faces one outer periphery exposed portion 13c arranged along the first direction F, the fourth portion 1-4 is a short portion facing the rectangular outer periphery exposed portion 13c. One of the sides has a shape with a curved portion r2. When one fourth portion 1-4 faces one outer periphery exposed portion 13c arranged along the second direction S, the fourth portion 1-4 has a length facing the rectangular outer periphery exposed portion 13c. One of the sides has a shape with a curved portion r3. A fourth portion 1-4 facing the outer peripheral exposed portion 13c closest to the second electrode 12 has a curved portion r4 on the long side facing the rectangular outer peripheral exposed portion 13c, and a fourth portion 1 having a curved portion r3. It is a shape smaller than the plane area of −4.
The fifth portion 1-5 is arranged in each of the first light emitting section 10X and the second light emitting section 10Y. The fifth portion 1-5 is provided adjacent to the second electrode 12 at one end of the second semiconductor layer 13p in the first direction F in plan view. The fifth portion 1-5 has an inclined portion m inclined with respect to one side of the second semiconductor layer 13p on the side facing the second electrode 12 in plan view. Further, the fifth portion 1-5 has a curved portion corresponding to the shape of the exposed portion 13b on the side facing the exposed portion 13b in plan view.

A plurality of second external connection portions 2 are arranged on the second electrode 12 . The second external connection portion 2 includes a plurality of sixth portions 2-6 and a plurality of seventh portions 2-7.
The sixth portions 2-6 are arranged in a matrix on the second electrode 12, for example, 3×5 pieces. The sixth portion 2-6 has a substantially square planar shape. The sixth portion 2-6 has a size of 30 μm×30 μm, for example.
The seventh portions 2-7 are arranged on both sides of the plurality of sixth portions 2-6 in the first direction F, respectively. The seventh portion 2-7 has an elongated rectangular planar shape in the second direction S. As shown in FIG. The seventh portion 2-7 has a size of 65 μm×133 μm, for example. The seventh portion 2-7 has a shape in which corners of a rectangle located outside the first light emitting portion 10X and the second light emitting portion 10Y are cut off.
The first portion 1-1, the second portion 1-2, the third portion 1-3, the fourth portion 1-4 and the fifth portion 1-5, and the sixth portion 2-6 and the seventh portion 2-7 are The distance between adjacent ones is about 16 μm.
The first external connection portions 1 are arranged at a density of 250 pieces/mm ² or more, and the second external connection portions 2 are arranged at a density of 25 pieces/mm ² or more.

The thickness of the first external connection portion 1 and the second external connection portion 2 is 19 μm.
The first external connection portion 1 and the second external connection portion 2 arranged in the first light emitting portion 10X and the first external connection portion 1 and the second external connection portion 2 arranged in the second light emitting portion 10Y are supported They are arranged symmetrically with respect to the bisector that bisects the area of the substrate 15 . In addition, in the first light-emitting portion 10X and the second light-emitting portion 10Y, respectively, the first external connection portion 1 and the second external connection portion 2 divide the area of the semiconductor stacked body 13 in the second direction S into two equal parts. They are arranged symmetrically with respect to the line.
For the first part 1-1 to the seventh part 2-7, the following names may be used. The first portion 1-1 is a connecting portion between exposed portions. The second part 1-2 is an intermediate connector. The third part 1-3 is the outer corner connection. The fourth portion 1-4 is the inner corner connection. The fifth portion 1-5 is an angled connection. The sixth portion 2-6 is the inner connection. The seventh portion 2-7 is the outer connection.

In such a light-emitting element 10, by arranging a plurality of the first external connection portions and the second external connection portions at a high density in a small plane area, the first external connection portion can be The force applied to the electrode, the insulating film, the semiconductor laminate, and the like during bonding can be relieved by the connecting portion 1 and the like. Furthermore, when the light emitting element 10 is joined to the wiring on the substrate 23, the first external connection portions 1 are widened, but contact between the adjacent first external connection portions 1 can be suppressed. As a result, the uncured resin material forming the resin member 32 constituting the light emitting device can be easily poured between the first external connection portions 1 . As a result, it is possible to improve the light extraction efficiency of the light emitting device and to avoid peeling of the light emitting element 10 due to thermal expansion of the gas caused by the existence of the gap between the first external connection portions 1 . . In addition, since the first external connection portion 1 and the second external connection portion 2 respectively arranged in the first light emitting portion 10X and the second light emitting portion 10Y are arranged symmetrically in the second direction S, the light emitting element 10 on the substrate 23 by flip-chip mounting, it is possible to reduce bias in force applied to the first external connection portion 1 and the second external connection portion 2 . Thereby, the bonding accuracy between the light emitting element 10 and the substrate 23 can be stabilized. As a result, it is possible to provide a light-emitting device with high heat dissipation, high reliability, and high light extraction efficiency.

Embodiment 2
As shown in FIG. 4, the light-emitting element 10A of Embodiment 2 includes the position of the outer peripheral exposed portion 13c, and the third portion 1-3 and the fourth portion 1- of the first external connection portion 1 facing the outer peripheral exposed portion 13c. The configuration is substantially the same as that of the light-emitting element 10 except that the shape of 4 is different.
The outer peripheral exposed portions 13c are arranged at the corners of the semiconductor stacked body 13 in plan view. Four perimeter exposed portions 13c are arranged along the first direction F and six along the second direction S are arranged. Sixteen outer peripheral exposed portions 13 c are arranged in one semiconductor laminate 13 .
The third portion 1-3 has a curved portion z in a portion facing the outer peripheral exposed portion 13c arranged at the corner of the semiconductor laminate 13. As shown in FIG.
Two fourth portions 1-4 are arranged to face one outer peripheral exposed portion 13c arranged along the first direction F, and the fourth portions 1-4 are arranged on the rectangular outer peripheral exposed portion 13c. It has curved portions r1 at opposite corners.
Such a light-emitting element 10A also has the same effect as the light-emitting element 10 described above.

Embodiment 3
As shown in FIG. 5, the light emitting element 10B of Embodiment 3 has the position of the outer peripheral exposed portion 13c, the shape of the fourth portion 1-4 of the first external connection portion 1 facing the outer peripheral exposed portion 13c, and the exposed portion 13b, the shape of the second portion 1-2 facing the exposed portion 13b, and the size of the sixth portion 2-6 of the second external connection portion 2 are different. It is the same.
In each of the first light emitting section 10X and the second light emitting section 10Y, the exposed portions 13b are arranged in two columns along the first direction F and arranged in two rows along the second direction S. As shown in FIG.
In the first light emitting portion 10X and the second light emitting portion 10Y, two outer peripheral exposed portions 13c are arranged along the first direction F, and four outer peripheral exposed portions 13c are arranged along the second direction S. As shown in FIG. Twelve outer peripheral exposed portions 13 c are arranged in one semiconductor laminate 13 .
A plurality of the first external connection portions 1 are arranged, and the first portion 1-1, the second portion 1-2, the third portion 1-3, the fourth portion 1-4 and the fifth portion 1-5 are respectively arranged. Includes multiple.

In the first direction F, the two first portions 1-1 are arranged so as to sandwich one exposed portion 13b. Two first portions 1-1 are spaced apart between adjacent exposed portions 13b. The first portion 1-1 has a rectangular shape with long sides along the first direction F and a curved portion k on the side facing the exposed portion 13b. The first portion 1-1 has, for example, a size of 20 μm×30 μm in plan view.
The second portion 1-2 is a rectangle having long sides along the second direction S in the first direction F and short sides of various lengths in the first direction F, and is 10 to 30 μm× It has a size of 40 μm. Twelve second portions 1-2 are arranged in the first direction F, and two rows are arranged in the second direction S between the exposed portions 13b. The second portions 1-2 are arranged in three rows, two rows, or one row between the exposed portion 13b and the outer periphery of the semiconductor laminate 13 in the second direction S. As shown in FIG.
The third portion 1-3 is a rectangle having long sides along the second direction S, and has a size of 60 μm×100 μm, for example.
Two fourth portions 1-4 are arranged adjacent to one outer peripheral exposed portion 13c arranged on the outer periphery of the semiconductor laminate 13 along the first direction F. As shown in FIG. Adjacent to the outer periphery exposed portion 13c disposed on the outer periphery of the semiconductor stacked body 13 along the second direction S, each one is disposed.
Two fifth portions 1-5 are provided for each of the first light emitting section 10X and the second light emitting section 10Y. The fifth portion 1-5 is provided adjacent to the second electrode 12 at one end of the second semiconductor layer 13p in the first direction F in plan view. The fifth portion 1-5 includes an inclined portion m on the side facing the second electrode 12 in plan view, which is inclined with respect to one side of the second semiconductor layer 13p.

A plurality of second external connection portions 2 are arranged on the second electrode 12 . The second external connection portion 2 includes a plurality of sixth portions 2-6 and a plurality of seventh portions 2-7.
The sixth portions 2-6 are arranged in a matrix on the second electrode 12, for example, 3×4. The sixth portion 2-6 has a substantially square planar shape. The sixth portion 2-6 has a size of 35 μm×35 μm, for example.
The seventh portions 2-7 are arranged on both sides of the plurality of sixth portions 2-6 in the first direction F, respectively. The seventh portion 2-7 has an elongated rectangular planar shape in the second direction. The seventh portion 2-7 has a size of 75 μm×140 μm, for example. The seventh portion 2-7 has a shape in which corners of a rectangle located outside the first light emitting portion 10X and the second light emitting portion 10Y are cut off.
The first part 1-1, the second part 1-2, the third part 1-3, the fourth part 1-4 and the fifth part 1-5, and the sixth part 2-6 and the seventh part 2-7 , depending on its position, and depending on the shape of its neighbors, not necessarily the same shape and size.
The first external connection portions 1 are arranged at a density of 250 pieces/mm ² or more, and the second external connection portions 2 are arranged at a density of 25 pieces/mm ² or more.
This light emitting element 10B also has the same effect as the light emitting elements 10 and 10A.

Embodiment 4
As shown in FIG. 6, the light-emitting device 10C of the fourth embodiment has one support substrate 15 and one substantially square semiconductor laminate 13 arranged thereon.
In the semiconductor laminate 13, the exposed portions 13b are arranged in four rows along the first direction F and arranged in five columns along the second direction S. As shown in FIG. Further, five outer peripheral exposed portions 13c are arranged along the first direction F and four along the second direction S are arranged. Eighteen peripheral exposed portions 13 c are arranged in one semiconductor laminate 13 .
Each of the first external connection parts 1 and the second external connection parts 2 is different in number and/or shape according to the size of the semiconductor laminate 13, and does not include the fifth part 1-5. , is substantially the same as that arranged in the light emitting element 10B, except that the planar shape of the seventh portion 2-7 is substantially rectangular.
This light emitting element 10C also has the same effect as the light emitting elements 10 and 10B.

Embodiment 5
As shown in FIG. 7, the light-emitting device 10D of Embodiment 5 has one substantially square-shaped semiconductor laminate 13 arranged on one support substrate 15 .
In the semiconductor laminate 13, the exposed portions 13b are arranged in four rows along the first direction F and arranged in six columns along the second direction S. As shown in FIG. In addition, six outer peripheral exposed portions 13c are arranged along the first direction F and four along the second direction S are arranged. Twenty outer peripheral exposed portions 13 c are arranged in one semiconductor laminate 13 .
Each of the first external connection parts 1 and the second external connection parts 2 is different in number and/or shape according to the size of the semiconductor laminate 13, and does not include the fifth part 1-5. , is substantially the same as that arranged in the light emitting element 10, except that the planar shape of the seventh portion 2-7 is substantially rectangular.
This light-emitting element 10D also has the same effect as the light-emitting element 10. FIG.

Embodiment 6
As shown in FIG. 8, the light-emitting element 10E of Embodiment 6 includes the position of the outer peripheral exposed portion 13c, and the third portion 1-3 and the fourth portion 1- of the first external connection portion 1 facing the outer peripheral exposed portion 13c. It is different from the shape of 4. Furthermore, the eighth portion 1-8 is arranged in each of the regions near the corners of the light emitting element 10E, that is, the regions each having an area of 1/9 or less of the total area of the semiconductor laminate including the corners. Other than that, the configuration is substantially the same as that of the light emitting device 10 .
The position of the outer peripheral exposed portion 13c and the shapes of the third portion 1-3 and the fourth portion 1-4 of the first external connection portion 1 facing the outer peripheral exposed portion 13c are substantially the same as those of the light emitting element 10A. .
This light emitting element 10E also has the same effect as the light emitting elements 10 and 10A.

Embodiment 7
As shown in FIGS. 2A and 2B and FIGS. 3A to 3D, a light-emitting device 33 of Embodiment 7 includes a substrate 23 having wirings 24, 25, and 26 on its upper surface, the above-described light-emitting element 10, a covering member 27, and a transparent material. and an optical member 28 .
The substrate 23 is made of aluminum nitride and has wirings 24, 25 and 26 on its upper surface. The wirings 24, 25, and 26 have outermost surfaces made of Au. The distances D1 and D2 between the wirings 24, 25, 26 are, for example, 50 μm. The light emitting element 10 is flip-chip mounted on the substrate 23 using the surface on which the first external connection portion 1 and the second external connection portion 2 are formed as the mounting surface.
That is, when the light-emitting element 10 is arranged, the second external connection portion 2 of the first light-emitting portion 10X faces the convex region of the second wiring 25, and the second external connection portion 2 of the second light-emitting portion 10Y faces the third region. It faces the convex region of the wiring 26 . Then, as shown in FIG. 3D, the notch t of the seventh portion 2-7 of the second external connection portion 2 is arranged corresponding to the inclined portions H1 and H2 in the convex region of the second wiring 25. As shown in FIG. Also, the inclined portions m of the fifth portion 1-5 of the first external connection portion 1 are arranged corresponding to the inclined portions G3 and G4 in the recessed region G of the first wiring 24. As shown in FIG.

A translucent member 28 made of ceramic containing about 15 wt % of phosphor is bonded to the upper surface of the light emitting element 10 . The thickness of the light-transmitting member 28 is about 180 μm, and the outer edge of the lower surface of the light-transmitting member 28 is substantially aligned with the outer edge of the light emitting element 10 in plan view.
On the side of the light emitting element 10, for example, as shown in FIG. 3C, a protective element 31 is arranged to electrically connect the wiring 24 and the wiring 26. As shown in FIG. The protection element 31 is, for example, a Zener diode.

A covering member 27 is arranged between the side surface of the light emitting element 10 and between the light emitting element 10 and the substrate 23 . The covering member 27 further covers the upper surface of the substrate 23 and the side surfaces of the first external connection portion 1 and the second external connection portion 2, and has the protection element 31 embedded therein. Moreover, the covering member 27 exposes the surface of the covering layer 29 arranged on the upper surface of the translucent member 28 and also covers the side surfaces of the translucent member 28 and the covering layer 29 .
The covering member 27 is made of a modified silicone resin containing about 30 wt % titanium oxide, and has light reflectivity.

In the light-emitting device having such a configuration, the light-emitting element 10 is bonded to the substrate 23 in a state in which high heat dissipation is ensured, and damage to the electrodes and the like due to the external force applied during bonding is prevented in the vicinity of the exposed portion 13b. can do. In addition, it is possible to avoid the occurrence of a short circuit between the two light emitting parts while narrowing the distance between the two light emitting parts. Therefore, it is possible to obtain a light emitting device having high reliability and high light extraction efficiency.

Embodiment 8
The light emitting device of Embodiment 8 has a light emitting element 10, a first substrate 23A, a second substrate 23Aa, and a conductive member . The first substrate 23A has a plurality of external terminals such as a first external terminal 41, a second external terminal 42, a third external terminal 43, and a fourth external terminal 44 on its upper surface, as shown in FIG. 9A. The second substrate 23Aa is arranged on the first substrate 23A, and has a plurality of wirings, for example, a first wiring 26A, a second wiring 25A1, a third wiring 24A, and a fourth wiring 25A2, on its upper surface. The first substrate 23A is, for example, an aluminum substrate. The second substrate 23Aa is, for example, an aluminum nitride substrate.
The light emitting element 10 is flip-chip mounted on the second substrate 23Aa using the surface on which the first external connection portion 1 and the second external connection portion 2 are formed as the mounting surface.
The first wiring 26A is electrically connected to the first external connection portion 1 of the first light emitting portion 10X in the light emitting element 10 . The second wiring 25A1 is electrically connected to the second external connection portion 2 of the first light emitting portion 10X. The third wiring 24A is electrically connected to the first external connection portion 1 of the second light emitting portion 10Y. The fourth wiring 25A2 is electrically connected to the second external connection portion 2 of the second light emitting portion 10Y.
The first external terminal 41, the second external terminal 42, the third external terminal 43, and the fourth external terminal 44 are connected to the first wiring 26A, the second wiring 25A1, the third wiring 24A, the fourth wiring 25A2, and the conductive member 34, respectively. are electrically connected by A metal wire, for example, can be used as the conductive member 34 . Specifically, the first external terminal 41 and the first wiring 26A, the second external terminal 42 and the second wiring 25A1, the third external terminal 43 and the third wiring 24A, the fourth external terminal 44 and the fourth wiring 25A2 are They are electrically connected by a conductive member 34 .
A circuit that connects the first light emitting units 10X in series is configured by electrically connecting the first external terminal 41, the first wiring 26A, the second wiring 25A1, and the second external terminal 42. . A circuit that connects the second light emitting units 10Y in series is configured by electrically connecting the third external terminal 43, the third wiring 24A, the fourth wiring 25A2, and the fourth external terminal 44. . For example, the lighting control of the first light emitting unit 10X and the second light emitting unit 10Y can be individually performed by appropriately changing the value of the current flowing through each circuit. For example, if the value of the current flowing through the first light emitting unit 10X is lower than the value of the current flowing through the second light emitting unit 10Y, the light output of the first light emitting unit 10X side of the light emitting element 10 can be made relatively low. can be done.

Embodiment 9
The light emitting device of Embodiment 9 has a light emitting element 10, a first substrate 23B, a second substrate 23Ba, and a conductive member . As shown in FIG. 9B, the first substrate 23B has a plurality of external terminals, for example, a first external terminal 41B and a second external terminal 42B, on its upper surface. The second substrate 23Ba is arranged on the first substrate 23B, and has a plurality of wirings on its upper surface, for example, a first wiring 26B, a second wiring 25A1, a third wiring 24A, a fourth wiring 25A2, and a conductive layer 26C. and The conductive layer 26C is arranged adjacent to the first wiring 26B and electrically insulated from the first wiring 26B. The constant current diode 35 is connected in series with the first wiring 26B and the conductive layer 26C.
The first external terminal 41B is electrically connected to the conductive layer 26C and the third wiring 24A by the conductive member 34. As shown in FIG. The second external terminal 42B is electrically connected to the second wiring 25A1 and the fourth wiring 25A2 by the conductive member 34, respectively. A circuit is formed by connecting the first light emitting portion 10X and the second light emitting portion 10Y of the light emitting element 10 in parallel between the first external terminal 41B and the second external terminal 42B. The constant current diode 35 is connected in series with the first light emitting section 10X.
A circuit that connects the first light emitting units 10X in series includes a first external terminal 41B, a conductive layer 26C, a constant current diode 35, a first wiring 26B, a second wiring 25A1, and a second external terminal 42B. It is configured by electrically connecting. A circuit that connects the second light emitting units 10Y in series is configured by electrically connecting the first external terminal 41B, the third wiring 24A, the fourth wiring 25A2, and the second external terminal 42B. .
Other than these configurations, the configuration is substantially the same as that of the eighth embodiment.
By arranging the constant current diode 35 in this way, the light output of the first light emitting unit 10X can be controlled by one circuit without controlling the light emitting units individually by two circuits. can be relatively lower than the output.
In the ninth embodiment, an example in which the constant current diode 35 is arranged has been described. The current diode 35 may be omitted.

1 first external connection part 1-1 first part k curved part 1-2 second part 1-3 third part z curved part 1-4 fourth part r1, r2, r3, r4 curved part 1-5 fifth Part 1-8 Eighth part m, m1, m2 Inclined part 2 Second external connection part 2-6 Sixth part 2-7 Seventh part t Notch 10, 10A, 10B, 10C, 10D, 10E Light emitting element 10X 1 light emitting portion 10Y second light emitting portion 11 first electrode 12 second electrode 13 semiconductor laminate 13n first semiconductor layer 13a light emitting layer 13p second semiconductor layer 13b exposed portion 13c outer peripheral exposed portion 13no outer peripheral portion 14 insulating film 14a opening 14b Opening 15 Supporting substrate 16 Light-reflective electrode 17 Protective layer 23 Substrates 23A, 23B First substrates 23Aa, 23Ba Second substrates 24, 25, 26 Wiring 24A Third wiring 25A1 Second wiring 25A2 Fourth wiring 26A, 26B First Wiring 26C Conductive layer 27 Coating member 28 Translucent member 29 Coating layer 31 Protective element 32 Resin member 33 Light emitting device 34 Conductive member 35 Constant current diodes 41, 41B First external terminals 42, 42B Second external terminal 43 Third external terminal 44 Fourth external terminal

Claims (17)

A semiconductor laminate having a rectangular planar shape and having a first semiconductor layer, a light-emitting layer, and a second semiconductor layer in this order, wherein the first semiconductor layer is exposed from the second semiconductor layer and the light-emitting layer and viewed from above a semiconductor laminate having a plurality of exposed portions surrounded by the second semiconductor layer in
an insulating film covering the semiconductor stack and having openings above the plurality of exposed portions;
a first electrode connected to the exposed portion at the opening and partly disposed on the second semiconductor layer via the insulating film;
a second electrode connected to the second semiconductor layer;
a first external connection portion connected to the first electrode and arranged apart from the exposed portion in plan view;
a second external connection portion connected to the second electrode;
In a plan view, the first external connection portion is positioned between the exposed portions in a first direction parallel to one side of the semiconductor stack, and includes a plurality of first portions arranged in the first direction; a plurality of second portions arranged in the first direction that are not located between the exposed portions in one direction and have a shape or size different from that of the first portion;
A plurality of the first portions are light emitting elements arranged between the exposed portions adjacent to each other in the first direction. The distance between the first portions adjacent to each other in the first direction, the distance between the second portions adjacent to each other in the first direction, and the first portion and the second portion in a second direction orthogonal to the first direction 2. The light-emitting device according to claim 1, wherein the distance between and is 16 μm or more. The light emitting device according to claim 1 or 2, wherein the first external connection parts are arranged at a density of 150 pieces/ ^mm2 or more. The light emitting device according to any one of claims 1 to ³ , wherein the plane area of the first portion of one of the first external connection portions is 100 µm2 or ^more and 1000 µm2 or less. The first portion has a shape including a curved portion on a side facing the exposed portion in plan view,
The light emitting device according to any one of claims 1 to 4, wherein the second portion has a square shape in plan view. 6. The first external connection part further includes a third part having a plane area larger than that of the first part and the second part around a corner of the semiconductor stack. 1. The light-emitting device according to item 1. The first semiconductor layer further includes an outer periphery exposed portion disposed on the outer periphery of the second semiconductor layer in a plan view and exposing the first semiconductor layer from the second semiconductor layer and the light emitting layer,
The first electrode is connected to the outer peripheral exposed portion,
The first external connection portion further includes a plurality of fourth portions arranged adjacent to the outer periphery exposed portion, and the fourth portions each have a curved portion on a side facing the outer periphery exposed portion in plan view. 7. The light emitting device according to any one of claims 1 to 6, having a planar shape. The light-emitting device according to any one of claims 1 to 7, wherein the plurality of exposed portions are arranged in a matrix. The light emitting device according to any one of claims 1 to 8, wherein the second external connection portion is arranged between the first external connection portions in plan view. The second external connection portion includes a plurality of sixth portions arranged in a matrix and arranged on both sides of the plurality of sixth portions in the first direction and having a plane area larger than the plane area of the sixth portion. 10. The light emitting device according to any one of claims 1 to 9, comprising a seventh portion having 11. The light-emitting device according to claim 10, wherein the seventh portions arranged on both sides of the plurality of sixth portions in the first direction have shapes or sizes different from each other in plan view. In plan view, the first external connection portion is provided adjacent to the second external connection portion in the vicinity of the end portion of the second semiconductor layer in the first direction, and faces the second external connection portion. 12. The light emitting device according to any one of claims 1 to 11, further comprising a fifth portion having a planar shape including an inclined portion inclined with respect to one side of the semiconductor laminate. The light emitting device according to any one of claims 1 to 12, wherein the first external connection portion further includes an eighth portion not located between the exposed portions in the first direction and having a circular planar shape. a substrate having a plurality of wirings on its upper surface;
The light-emitting element according to any one of claims 1 to 13, which is flip-chip mounted on the wiring via a plurality of first external connection parts and second external connection parts;
A light-emitting device comprising: the light-emitting element; the first external connection portion; the second external connection portion; and a covering member containing a light-reflective material covering the substrate. the light-emitting element including a first light-emitting portion and a second light-emitting portion provided with the first external connection portion and the second external connection portion, respectively, is arranged on the substrate;
The wiring is
a first wiring portion connected to the first external connection portion of the first light emitting portion;
a second wiring portion connected to the second external connection portion of the first light emitting portion and the first external connection portion of the second light emitting portion;
15. The light-emitting device according to claim 14, further comprising a third wiring section connected to the second external connection section of the second light-emitting section. In a second direction orthogonal to the first direction, a portion of the second wiring portion to which the second external connection portion of the first light emitting portion is connected is positioned between the first wiring portions, and the 16. The light emitting device according to claim 15, wherein a portion of the third wiring portion to which the second external connection portion of the second light emitting portion is connected is located between the second wiring portions. In plan view, the distance between the first wiring portion and the second wiring portion and the distance between the second wiring portion and the third wiring portion in a second direction orthogonal to the first direction are 17. The light emitting device according to claim 15 or 16, having a thickness of 30 μm or more and 70 μm or less.

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