WO2016043203A1 - Positive photosensitive resin composition, method for producing cured film, cured film, liquid crystal display device, organic electroluminescent display device and touch panel - Google Patents

Positive photosensitive resin composition, method for producing cured film, cured film, liquid crystal display device, organic electroluminescent display device and touch panel Download PDF

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Publication number
WO2016043203A1
WO2016043203A1 PCT/JP2015/076219 JP2015076219W WO2016043203A1 WO 2016043203 A1 WO2016043203 A1 WO 2016043203A1 JP 2015076219 W JP2015076219 W JP 2015076219W WO 2016043203 A1 WO2016043203 A1 WO 2016043203A1
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group
resin composition
photosensitive resin
acid
general formula
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PCT/JP2015/076219
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French (fr)
Japanese (ja)
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健太 吉田
一郎 小山
山田 悟
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富士フイルム株式会社
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Priority to JP2016548902A priority Critical patent/JP6259109B2/en
Publication of WO2016043203A1 publication Critical patent/WO2016043203A1/en

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/123Connection of the pixel electrodes to the thin film transistors [TFT]
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/12Light sources with substantially two-dimensional radiating surfaces
    • H05B33/22Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers

Definitions

  • the present invention relates to a positive photosensitive resin composition. More specifically, a positive photosensitive resin suitable for forming a planarizing film, a protective film, an interlayer insulating film, and the like of electronic components such as a liquid crystal display device, an organic electroluminescence display device, a touch panel, an integrated circuit element, and a solid-state imaging element Relates to the composition.
  • the present invention also relates to a method for producing a cured film, a cured film obtained by curing a positive photosensitive resin composition, a liquid crystal display device using the cured film, an image display device such as an organic electroluminescence display device, and an input device such as a touch panel. .
  • Image display devices such as liquid crystal display devices and organic electroluminescence display devices, and input devices such as touch panels are often provided with patterned interlayer insulating films.
  • a photosensitive resin composition is widely used because the number of steps for obtaining a required pattern shape is small and sufficient flatness is obtained.
  • Patent Document 1 discloses a negative photosensitive resin composition containing an N-aromatic glycine derivative and a polymer precursor.
  • Patent Document 2 discloses a positive photosensitive resin composition containing an alkali-soluble resin, a photosensitive agent, and a thermal base generator.
  • the thermal base generator a secondary amine having a carbamate protecting group and a heterocyclic structure containing a nitrogen atom is used.
  • Patent Document 1 as described in paragraph 0014, can obtain a large solubility contrast regardless of the type of polyimide precursor resin, and as a result, a pattern having a good shape while maintaining a sufficient process margin.
  • the invention aims to provide a photosensitive resin composition that can be obtained.
  • an N-aromatic glycine derivative is used as a photobase generator. That is, in Patent Document 1, an exposed portion is cured by imidizing a polyimide precursor resin using an amine generated by irradiating light to an N-aromatic glycine derivative as a catalyst to cure an exposed portion and an unexposed portion. A negative pattern is formed with a difference in solubility between the two.
  • Resins that are cured by cyclization with a base can form cured films with excellent heat resistance. Heat treatment was required. For this reason, when a cured film is formed using such a resin, there is a risk that heat during the cyclization reaction of the resin may cause thermal damage to electronic components, and further reduction of the cyclization temperature is required. Therefore, further improvement in curability is desired.
  • Patent Document 1 does not discuss the reduction of the cyclization temperature, and in the examples, imidization is performed by heating at 300 ° C. for 1 hour.
  • Patent Document 1 is an invention relating to a negative photosensitive resin composition, and there is no description or suggestion about application to a positive photosensitive resin composition.
  • Patent Document 2 is an invention relating to a positive photosensitive resin composition, but the present inventor has examined the positive photosensitive resin composition disclosed in Patent Document 2 and found that an acid generated in an exposed area. Thus, it was found that the deprotection reaction of the thermal base generator is likely to occur and the sensitivity is likely to be lowered.
  • an object of the present invention is to provide a positive photosensitive resin composition excellent in sensitivity and curability. Moreover, it aims at providing the manufacturing method of a cured film, a cured film, a liquid crystal display device, an organic electroluminescent display device, and a touch panel.
  • a thermal base generator represented by the following general formula (1) and an acid group and / or a group in which an acid group is protected by an acid-decomposable group are contained,
  • the present inventors have found that a positive photosensitive resin composition excellent in sensitivity and curability can be provided by using a resin that is cured and cured and a photoacid generator in combination, and the present invention has been completed.
  • the present invention provides the following.
  • a positive photosensitive resin composition comprising a photoacid generator and a solvent;
  • R 1 represents a hydrogen atom or an n-valent organic group
  • R 2 to R 5 each independently represents a hydrogen atom or an alkyl group
  • n represents an integer of 1 or more.
  • the resin is at least one selected from a polybenzoxazole precursor containing a repeating unit represented by the general formula (2) and a polyimide precursor containing a repeating unit represented by the general formula (3).
  • X 1 and X 2 each independently represent a tetravalent organic group
  • Y 1 and Y 2 each independently represent a divalent organic group
  • R 6 and R 8 each independently represents an acid-decomposable group
  • R 7 and R 9 each independently represent a hydrogen atom, a crosslinkable group, an alkyl group, an acid-decomposable group, or a group represented by —CORc
  • Rc represents an alkyl group or an aryl group.
  • the resin is at least one selected from a polybenzoxazole precursor containing a repeating unit represented by the general formula (4) and a polyimide precursor containing a repeating unit represented by the general formula (5).
  • X 3 and X 4 each independently represent a tetravalent organic group
  • Y 3 and Y 4 each independently represent a divalent organic group
  • R 10 and R 12 represent a hydrogen atom
  • R 11 and R 13 each independently represent a hydrogen atom, a crosslinkable group, an alkyl group, or a group represented by —CORc
  • Rc represents an alkyl group or an aryl group.
  • the positive photosensitive resin composition according to ⁇ 4>, wherein the compound having a group in which at least a part of the acid group is protected with an acid-decomposable group is a compound represented by the following general formula (E1): object;
  • R 21 represents a monovalent to hexavalent organic group
  • R 22 and R 23 each independently represents a hydrogen atom, an alkyl group or an aryl group, Any one of R 22 and R 23 is an alkyl group or an aryl group
  • R 24 represents an alkyl group or an aryl group, R 24 may be bonded to R 22 or R 23 to form a cyclic ether structure
  • n1 represents an integer of 1 to 6.
  • ⁇ 6> The positive photosensitive resin composition according to any one of ⁇ 1> to ⁇ 5>, wherein in general formula (1), n is 1 and R 1 is an aryl group.
  • n is 1 and R 1 is an aryl group.
  • ⁇ 7> The positive photosensitive resin composition according to any one of ⁇ 1> to ⁇ 6>, wherein the resin is a polybenzoxazole precursor.
  • ⁇ 8> Applying the positive photosensitive resin composition according to any one of ⁇ 1> to ⁇ 7> to a substrate; Removing the solvent from the applied positive photosensitive resin composition; Exposing the positive photosensitive resin composition from which the solvent has been removed with actinic radiation; Developing the exposed positive photosensitive resin composition with a developer; And a step of thermally curing the developed positive photosensitive resin composition.
  • ⁇ 9> The method for producing a cured film according to ⁇ 8>, including a step of exposing the developed positive photosensitive resin composition after the step of developing and before the step of thermosetting.
  • ⁇ 10> A cured film obtained by curing the positive photosensitive resin composition according to any one of ⁇ 1> to ⁇ 7>.
  • ⁇ 11> The cured film according to ⁇ 10>, which is an interlayer insulating film.
  • ⁇ 12> A liquid crystal display device having the cured film according to ⁇ 10> or ⁇ 11>.
  • ⁇ 13> An organic electroluminescence display device having the cured film according to ⁇ 10> or ⁇ 11>.
  • ⁇ 14> A touch panel having the cured film according to ⁇ 10> or ⁇ 11>.
  • 1 is a conceptual diagram of a configuration of an example of a liquid crystal display device. It is a composition conceptual diagram of other examples of a liquid crystal display. 1 shows a conceptual diagram of a configuration of an example of an organic EL display device. It is sectional drawing which shows the structural example of a capacitive touch panel. It is explanatory drawing which shows an example of a front plate. It is explanatory drawing which shows an example of a 1st transparent electrode pattern and a 2nd transparent electrode pattern.
  • the description of the constituent elements described below may be made based on typical embodiments of the present invention, but the present invention is not limited to such embodiments.
  • “to” is used to mean that the numerical values described before and after it are included as a lower limit value and an upper limit value.
  • the description which does not describe substitution and non-substitution includes what does not have a substituent and what has a substituent.
  • the “alkyl group” includes not only an alkyl group having no substituent (unsubstituted alkyl group) but also an alkyl group having a substituent (substituted alkyl group).
  • (meth) acrylate represents acrylate and methacrylate
  • (meth) acryl represents acryl and methacryl
  • (meth) acryloyl represents acryloyl and methacryloyl.
  • solid content is solid content in 25 degreeC.
  • the weight average molecular weight and number average molecular weight of a polymer are defined as polystyrene conversion values by GPC (gel permeation chromatograph) measurement.
  • the weight average molecular weight and number average molecular weight of the polymer are, for example, HLC-8120 (manufactured by Tosoh Corporation), and TSK gel Multipore HXL-M (manufactured by Tosoh Corporation, 7.8 mm ID ⁇ 30.0 cm) as a column. , By using THF (tetrahydrofuran) as an eluent.
  • HLC-8120 manufactured by Tosoh Corporation
  • TSK gel Multipore HXL-M manufactured by Tosoh Corporation, 7.8 mm ID ⁇ 30.0 cm
  • the positive photosensitive resin composition of the present invention (hereinafter also referred to as photosensitive resin composition) contains (A) an acid group and / or a group in which an acid group is protected by an acid-decomposable group, and is cyclized by a base. And (B) a thermal base generator represented by the following general formula (1), (C) a photoacid generator, and (D) a solvent. By setting it as the said structure, it can be set as the photosensitive resin composition excellent in the sensitivity and sclerosis
  • An example of the mechanism of manifestation of the effect of the invention is estimated as follows, but is not particularly limited as long as the same effect can be obtained.
  • the thermal base generator represented by the general formula (1) is a compound having a carboxyl group, and has an acidic property in a normal state. For this reason, in the state before a heating, especially in an exposure stage, a composition can be made into an acidic state, generation
  • the carboxyl group is decarboxylated or dehydrated and lost by heating and the amine site that has been neutralized and inactivated becomes active and becomes basic. That is, in the heating for curing after exposure, when the thermal base generator is heated, the reaction of the following formula proceeds to generate a base.
  • the photosensitive resin composition of the present invention can be preferably used as a positive photosensitive resin composition, and can be particularly preferably used as a chemically amplified positive photosensitive resin composition.
  • each component of the photosensitive resin composition of the present invention will be described.
  • the photosensitive resin composition of the present invention contains a resin that contains an acid group and / or a group in which the acid group is protected by an acid-decomposable group, and is cyclized and cured by a base.
  • the resin preferably has a group in which an acid group is protected with an acid-decomposable group. According to this aspect, a photosensitive resin composition excellent in sensitivity is easily obtained.
  • the resin is preferably a heterocyclic-containing polymer precursor capable of forming a heterocyclic-containing polymer by causing a cyclization reaction by heating.
  • a polybenzoxazole precursor and / or a polyimide precursor are preferable, and a polybenzoxazole precursor is more preferable because a cured film excellent in permeability can be easily obtained.
  • These resins have a high cyclization temperature, and conventionally cyclized by heating to 300 ° C. or higher. However, according to the present invention, even these resins are 300 ° C. or lower (preferably 200 ° C. or lower). Further, the cyclization reaction can be sufficiently advanced by heating at 180 ° C. or less, and the effects of the present invention can be obtained more remarkably.
  • the resin content in the photosensitive resin composition of the present invention is preferably 30 to 95% by mass with respect to the total solid content of the photosensitive resin composition.
  • the lower limit is more preferably 40% by mass or more, and further preferably 50% by mass or more.
  • the upper limit is more preferably 90% by mass or less.
  • the polybenzoxazole precursor of the first aspect preferably has a group in which an acid group is protected by an acid-decomposable group, and includes a repeating unit represented by the following general formula (2). More preferred.
  • the repeating unit represented by the following general formula (2) is preferably contained in a proportion of 50 to 100 mol%, more preferably 70 to 100 mol% of the total repeating units of the polybenzoxazole precursor.
  • the photosensitive resin composition using the polybenzoxazole precursor according to the first aspect is, for example, a photosensitive resin having excellent sensitivity and curability when used in combination with a photoacid generator that generates an acid having a pKa of 3 or less.
  • X 1 represents a tetravalent organic group
  • Y 1 each independently represents a divalent organic group
  • R 6 independently represents an acid-decomposable group
  • R 7 represents Each independently represents a hydrogen atom, a crosslinkable group, an alkyl group, an acid-decomposable group, or a group represented by —CORc
  • Rc represents an alkyl group or an aryl group.
  • X 1 represents a tetravalent organic group.
  • the tetravalent organic group is not particularly limited, but preferably has at least one cyclic structure, more preferably 1 to 10 cyclic structures, and still more preferably 1 to 5 cyclic structures.
  • the cyclic structure may be an aromatic ring, a heterocyclic ring, or an aliphatic ring, and preferably includes an aromatic ring or a heterocyclic ring, and more preferably includes an aromatic ring.
  • the tetravalent organic group has a cyclic structure, it is easy to form a cured film having excellent light resistance and chemical resistance.
  • the aromatic ring include a benzene ring, a naphthalene ring, an anthracene ring, and a fluorene ring.
  • heterocyclic ring furan ring, thiophene ring, pyrrole ring, pyrroline ring, pyrrolidine ring, oxazole ring, isoxazole ring, thiazole ring, isothiazole ring, imidazole ring, imidazoline ring, imidazolidine ring, pyrazole ring, pyrazoline ring, Examples include pyrazolidine ring, triazole ring, furazane ring, tetrazole ring, pyran ring, thiyne ring, pyridine ring, piperidine ring, oxazine ring, morpholine ring, thiazine ring, pyridazine ring, pyrimidine ring, pyrazine ring, piperazine ring and triazine ring. It is done.
  • the aliphatic ring include a cyclopentane ring,
  • the ring When the tetravalent organic group has a plurality of cyclic structures, the ring may be condensed, or a plurality of rings may be linked via a single bond or a linking group.
  • the linking group e.g., -O -, - S -, - C (CF 3) 2 -, - CH 2 -, - SO 2 -, - NHCO- and preferably a group comprising a combination thereof, -SO 2 —, —CH 2 —, —C (CF 3 ) 2 — and a group formed by a combination thereof are more preferable, and —C (CF 3 ) 2 — is more preferable.
  • the tetravalent organic group is preferably a group having a plurality of cyclic structures, and more preferably two or more aromatic rings are linked via a single bond or a linking group.
  • X 1 include the following.
  • either * 1 or * 2 represents a bond to —OR 7
  • the other represents a bond to the polymer main chain
  • either * 3 or * 4 represents represents a linking position to -OR 8
  • the other represents a linking position to the polymer backbone.
  • X 1 is preferably (X-1) to (X-4), more preferably (X-1), (x-3), or (X-4), and particularly preferably (X-1).
  • X 1 is (X-1)
  • a photosensitive resin composition excellent in solvent solubility and sensitivity is easily obtained.
  • R 6 represents an acid-decomposable group. Any acid-decomposable group is preferably used as long as it decomposes by the action of an acid to generate an alkali-soluble group such as a hydroxyl group or a carboxyl group.
  • an acetal group, a ketal group, a silyl group, a silyl ether group, a tertiary alkyl ester group and the like can be mentioned, and an acetal group is preferable from the viewpoint of sensitivity.
  • the acid-decomposable group examples include tert-butoxycarbonyl group, isopropoxycarbonyl group, tetrahydropyranyl group, tetrahydrofuranyl group, ethoxyethyl group, methoxyethyl group, ethoxymethyl group, trimethylsilyl group, tert-butoxycarbonylmethyl.
  • R 7 represents a hydrogen atom, a hydrogen atom, a crosslinkable group, an alkyl group, an acid-decomposable group, or a group represented by —CORc, and Rc represents an alkyl group or an aryl group.
  • the alkyl group represented by R 7 may be linear, branched or cyclic.
  • the carbon number is preferably 1-20, more preferably 1-15, still more preferably 1-10.
  • the carbon number is preferably 3 to 20, more preferably 3 to 15, and still more preferably 3 to 10.
  • the carbon number is preferably 3 to 15, more preferably 5 to 15, and more preferably 5 to 10.
  • Specific examples of the alkyl group include a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, an octyl group, a cyclopentyl group, a cyclohexyl group, a norbornyl group, and an adamantyl group.
  • the alkyl group may have a substituent or may be unsubstituted.
  • the substituent examples include halogen atoms such as fluorine atom, chlorine atom, bromine atom and iodine atom, cyano group, amide group and sulfonylamide group.
  • the crosslinkable group represented by R 7 is not limited as long as a crosslinking reaction is caused by heat. Examples thereof include an epoxy group, an oxetanyl group, a group having an ethylenically unsaturated bond, a blocked isocyanate group, an alkoxymethyl group, a methylol group, and an amino group.
  • the acid-decomposable group represented by R 7 those described for R 6 can be mentioned, and the preferred range is also the same.
  • the alkyl group represented by Rc has the same meaning as the alkyl group described for R 7 , and the preferred range is also the same.
  • the alkyl group may have a substituent or may be unsubstituted. Examples of the substituent include those described above.
  • the aryl group represented by Rc is preferably an aryl group having 6 to 20 carbon atoms, more preferably an aryl group having 6 to 14 carbon atoms, and further preferably an aryl group having 6 to 10 carbon atoms. Specific examples of the aryl group include a phenyl group, a toluyl group, a mesityl group, and a naphthyl group.
  • the aryl group may have a substituent or may be unsubstituted. Examples of the substituent include those described above.
  • the acid groups of all the repeating units of the polybenzoxazole precursor are preferably protected with acid-decomposable groups, and 10 to 60% More preferably, it is protected with an acid-decomposable group.
  • the lower limit is more preferably 15% or more.
  • the upper limit is more preferably 50% or less, and still more preferably 45% or less.
  • the acid group which all the repeating units of a polybenzoxazole precursor here mean the acid group which all the repeating units of the polybenzoxazole precursor of the state before performing protection by an acid-decomposable group have.
  • the acid group is preferably a hydroxyl group directly bonded to an aromatic ring, and more preferably a phenolic hydroxyl group.
  • Y 1 represents a divalent organic group.
  • the divalent organic group include a cyclic aliphatic group, a linear aliphatic group, a branched aliphatic group, an aromatic ring group, and these, —CH 2 —, —O—, —S—, Examples include groups consisting of a combination of at least one of —SO 2 —, —CO—, —NHCO—, and —C (CF 3 ) 2 —.
  • Examples of the cyclic aliphatic group include a cyclic alkylene group, a cyclic alkenylene group, and a cyclic alkynylene group.
  • the number of carbon atoms in the cyclic aliphatic group is preferably 3 to 15, and more preferably 6 to 12. When the carbon number is in the above range, a cured film excellent in light resistance and chemical resistance is easily obtained.
  • the cyclic aliphatic group is preferably a 6-membered ring.
  • the cyclic aliphatic group represented by Y 1 may have a substituent or may be unsubstituted. Unsubstituted is preferred.
  • the substituent examples include an alkyl group, an alkenyl group, an alkynyl group, an aryl group, an alkoxy group, an aryloxy group, and a halogen atom.
  • the carbon number of the cyclic aliphatic group is the number excluding the carbon number of the substituent.
  • Specific examples of the cyclic aliphatic group include a residue (cyclic aliphatic group) remaining after removal of the carboxyl group of the cyclic aliphatic dicarboxylic acid.
  • cyclopropylene group a cyclobutylene group, a cyclopentylene group, a cyclohexylene group, a biscyclohexylene group, and an adamantylene group
  • a cyclohexylene group or a biscyclohexylene group is preferable. More preferred.
  • linear or branched aliphatic group examples include an alkylene group, an alkenylene group, an alkynylene group, and a polyoxyalkylene group, and an alkylene group, an alkenylene group, and an alkynylene group are preferable, and an alkylene group is more preferable.
  • the carbon number of the linear or branched aliphatic group is preferably 4 to 20, more preferably 4 to 15, and still more preferably 4 to 12. When the carbon number is in the above range, the solvent solubility is good.
  • linear or branched aliphatic group examples include a linear aliphatic dicarboxylic acid or a residue (aliphatic group) remaining after removal of the carboxyl group of the branched aliphatic dicarboxylic acid.
  • linear aliphatic dicarboxylic acids include adipic acid, pimelic acid, suberic acid, azelaic acid, sebacic acid, undecanedioic acid, dodecanedioic acid, tridecanedioic acid, tetradecanedioic acid, pentadecanedioic acid, and hexadecanedioic acid.
  • Heptadecanedioic acid Heptadecanedioic acid, octadecanedioic acid, nonadecanedioic acid, eicosanedioic acid, docosanedioic acid and the like.
  • Examples of branched aliphatic dicarboxylic acids include 3-methylglutaric acid, 3,3-dimethylglutaric acid, 2-methyladipic acid, 2-ethyladipic acid, 2-propyladipic acid, 2-butyladipic acid, 3 -Methyladipic acid, 3-tert-butyladipic acid, 2,3-dimethyladipic acid, 2,4-dimethyladipic acid, 3,3-dimethyladipic acid, 3,4-dimethyladipic acid, 2,4,4 -Trimethyladipic acid, 2,2,5,5-tetramethyladipic acid, 2-methylpimelic acid, 3-methylpimelic acid, 3-methylsuberic acid, 2-methylsebacic acid, nonane-2,5-dicarboxylic acid, etc. Can be mentioned.
  • the aromatic ring group may be monocyclic or polycyclic.
  • the aromatic ring group may be a heteroaromatic ring group containing a hetero atom.
  • Specific examples of the aromatic ring include benzene ring, naphthalene ring, pentalene ring, indene ring, azulene ring, heptalene ring, indecene ring, perylene ring, pentacene ring, acenaphthalene ring, phenanthrene ring, anthracene ring, naphthacene ring, chrysene Ring, triphenylene ring, fluorene ring, biphenyl ring, pyrrole ring, furan ring, thiophene ring, imidazole ring, oxazole ring, thiazole ring, pyridine ring, pyrazine ring, pyrimidine ring, pyridazine ring,
  • the first polybenzoxazole precursor is a repeating unit in which Y 1 is a cyclic aliphatic group and a repeating unit in which Y 1 is a linear or branched aliphatic group in total. It is preferable to contain 70 mol% or more of the unit, preferably 70 to 100 mol%, more preferably 80 to 100 mol%.
  • the ratio of the repeating unit in which Y 1 is a cyclic aliphatic group to the repeating unit in which Y 1 is a linear or branched aliphatic group is 9: 1 to 3: 7 in molar ratio. It is preferably 8.5: 1.5 to 3.5: 6.5, more preferably 8: 2 to 4: 6.
  • the polybenzoxazole precursor may contain a repeating unit represented by the following general formula (4).
  • the repeating unit represented by General formula (2) and repeating units other than the repeating unit represented by General formula (4) mentioned later may be included.
  • Examples of the other repeating unit include a repeating unit represented by the general formula (a1) and a repeating unit represented by the general formula (a2).
  • Y 11 represents an aromatic ring group, a cyclic aliphatic group, a linear aliphatic group, a branched aliphatic group, or these, —CH 2 —, —O—, — Represents a group consisting of a combination of at least one of S—, —SO 2 —, —CO—, —NHCO—, and —C (CF 3 ) 2 —, and X 11 represents an aromatic ring group, a cyclic aliphatic group A group consisting of a group or a combination thereof with —CH 2 —, —O—, —S—, —SO 2 —, —CO—, —NHCO—, and —C (CF 3 ) 2 —.
  • the aromatic ring group, the cyclic aliphatic group, the linear aliphatic group, and the branched aliphatic group include those described above, and preferred ranges thereof are also the same.
  • Y 12 represents an aromatic ring group, a cyclic aliphatic group, a linear aliphatic group, a branched aliphatic group, or these, —CH 2 —, —O—, —S -, -SO 2- , -CO-, -NHCO-, and a group consisting of a combination with at least one of -C (CF 3 ) 2- are represented, and X 12 represents a group containing a silicon atom.
  • Examples of the aromatic ring group, the cyclic aliphatic group, the linear aliphatic group, and the branched aliphatic group include those described above, and preferred ranges thereof are also the same.
  • the group containing a silicon atom represented by X 12 is preferably a group represented by the following.
  • R 20 and R 21 each independently represent a divalent organic group
  • R 22 and R 23 each independently represent a monovalent organic group.
  • the divalent organic group represented by R 20 and R 21 is not particularly limited, but specifically, a linear or branched alkylene group having 1 to 20 carbon atoms, an arylene group having 6 to 20 carbon atoms, a carbon number Examples thereof include 3 to 20 divalent cycloaliphatic groups, or groups formed by combining these groups.
  • the carbon number of the linear or branched alkylene group is preferably 1-20, more preferably 1-10, and even more preferably 1-6. Specific examples include a methylene group, an ethylene group, a propylene group, an isopropylene group, a butylene group, and a t-butylene group.
  • the carbon number of the arylene group is preferably 6 to 20, more preferably 6 to 14, and further preferably 6 to 10.
  • Specific examples of the arylene group include a 1,4-phenylene group, a 1,3-phenylene group, a 1,2-phenylene group, a naphthylene group, and an anthracenylene group.
  • the carbon number of the divalent cycloaliphatic group is preferably 3 to 20, more preferably 3 to 10, and further preferably 5 to 6.
  • Examples of the divalent cycloaliphatic group include a 1,4-cyclohexylene group, a 1,3-cyclohexylene group, and a 1,2-cyclohexylene group.
  • the linear or branched alkylene group having 1 to 20 carbon atoms, the arylene group having 6 to 20 carbon atoms, and the divalent cyclic aliphatic group having 3 to 20 carbon atoms may have a substituent.
  • the substituent include an alkyl group having 1 to 6 carbon atoms, a halogen atom, a cyano group, an amide group, and a sulfonylamide group.
  • the group formed by combining a straight chain or branched alkylene group having 1 to 20 carbon atoms, an arylene group having 6 to 20 carbon atoms, or a divalent cyclic aliphatic group having 3 to 20 carbon atoms is not particularly limited.
  • a group formed by combining groups formed by combining divalent cycloaliphatic groups having 3 to 20 carbon atoms is preferable.
  • Specific examples of the group formed by combining a linear or branched alkylene group having 1 to 20 carbon atoms, an arylene group having 6 to 20 carbon atoms, or a divalent cyclic aliphatic group having 3 to 20 carbon atoms are as follows: Although the following are mentioned, it is not limited to these.
  • Examples of the monovalent organic group represented by R 22 and R 23 include a linear or branched alkyl group having 1 to 20 carbon atoms or an aryl group having 6 to 20 carbon atoms.
  • the carbon number of the linear or branched alkyl group is preferably 1-20, more preferably 1-10, still more preferably 1-6.
  • examples of the alkyl group include a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, and a t-butyl group.
  • the aryl group preferably has 6 to 20 carbon atoms, more preferably 6 to 14 carbon atoms, and still more preferably 6 to 10 carbon atoms.
  • aryl group examples include a phenyl group, a toluyl group, a mesityl group, and a naphthyl group.
  • the linear or branched alkyl group or aryl group having 1 to 20 carbon atoms may have a substituent.
  • substituent include an alkyl group having 1 to 6 carbon atoms, a halogen atom, a cyano group, an amide group, and a sulfonylamide group.
  • the polybenzoxazole precursor of the second aspect includes a repeating unit represented by the following general formula (4).
  • the repeating unit represented by the following general formula (4) is preferably contained in a proportion of 50 to 100 mol%, more preferably 70 to 100 mol% of the total repeating units of the polybenzoxazole precursor.
  • X 3 represents a tetravalent organic group
  • Y 3 represents a divalent organic group
  • R 10 represents a hydrogen atom
  • R 11 represents a hydrogen atom, a crosslinkable group, an alkyl group
  • it represents a group represented by —CORc
  • Rc represents an alkyl group or an aryl group.
  • X 3 and Y 3 in the general formula (4) have the same meanings as X 1 and Y 1 in the general formula (2), and preferred ranges thereof are also the same.
  • the crosslinkable group, alkyl group, and group represented by —CORc represented by R 11 in the general formula (4) are represented by the crosslinkable group, alkyl group, and —CORc described in R 7 of the general formula (2). And the preferred range is also the same.
  • R 10 and R 11 contained in all repeating units are preferably hydrogen atoms, and more preferably 60 to 95% are hydrogen atoms. .
  • the lower limit is more preferably 70% or more.
  • the upper limit is more preferably 90% or less.
  • the polybenzoxazole precursor of the second aspect may further contain other repeating units described above. Examples of the other repeating unit include the repeating unit represented by the general formula (a1) and the repeating unit represented by the general formula (a2).
  • a quinonediazide compound is used as a photoacid generator, or at least a part of an acid group described later is protected with an acid-decomposable group.
  • a compound having a group ((E) compound) By further blending a compound having a group ((E) compound), a photosensitive resin composition excellent in sensitivity can be easily obtained.
  • the polybenzoxazole precursor in the present invention preferably has a structure in which the terminal is sealed with a monofunctional acid chloride. According to this aspect, a cured film with good transmittance is easily obtained.
  • monofunctional acid chlorides include acetyl chloride, butyryl chloride, propionic acid chloride, 2-ethylhexanoic acid chloride, cyclohexanecarboxylic acid chloride, benzoyl chloride, naphthoyl chloride, acrylic acid chloride, heptanoic acid chloride, isobutyryl.
  • one end or both ends are preferably groups represented by the general formula (b1), and both ends are more preferably groups represented by the general formula (b1). .
  • Formula (b1) In the general formula (b1), Z represents a single bond, a carbon atom or a sulfur atom, R 30 represents a monovalent organic group, n represents 0 or 1, and when Z is a single bond, a is 0. Yes, when Z is a carbon atom, a is 1, when Z is a sulfur atom, a is 2, and when n is 0, two R 30 may be bonded to each other to form a ring. Good.
  • Z represents a single bond, a carbon atom or a sulfur atom, and preferably a single bond or a carbon atom.
  • R 30 represents a monovalent organic group.
  • the monovalent organic group is not particularly limited, and examples thereof include those having a formula weight of 20 to 500 per molecule.
  • the atoms constituting the monovalent organic group are preferably selected from carbon atoms, oxygen atoms, nitrogen atoms, hydrogen atoms, and sulfur atoms, and are selected from carbon atoms, oxygen atoms, nitrogen atoms, and hydrogen atoms. It is more preferable.
  • an alkyl group preferably 1 to 10 carbon atoms, more preferably 1 to 6 carbon atoms
  • an alkenyl group preferably 2 to 10 carbon atoms, more preferably 2 to 6 carbon atoms
  • an alkynyl group Preferably 2 to 10 carbon atoms, more preferably 2 to 6 carbon atoms
  • an aryl group preferably 6 to 20 carbon atoms, more preferably 6 to 10 carbon atoms
  • an alkoxy group preferably 1 to 10 carbon atoms, More preferably 1 to 6 carbon atoms, carboxyl group, crosslinkable group, oxygen atom, carbonyl group, sulfonyl group, arylene group (preferably 6 to 20 carbon atoms, more preferably 6 to 10 carbon atoms), alkylene Groups (preferably having 1 to 10 carbon atoms, more preferably 1 to 6 carbon atoms), alkenylene groups (preferably having 2 to 10 carbon atoms, more preferably 2 to 6 carbon atoms), and alkynylene.
  • alkenyl group (Preferably having 2 to 10 carbon atoms, more preferably 2 to 6 carbon atoms) and a combination of alkenyl group, alkynyl group, aryl group, carbonyl group, carboxyl group, oxygen atom, alkylene group, alkynylene group or arylene group It is more preferable that These groups may have a substituent, and examples of the substituent include a hydroxyl group, an alkyl group, a halogen atom, a cyano group, an amide group, and a sulfonylamide group.
  • the polybenzoxazole precursor preferably has a weight average molecular weight (Mw) of 3,000 to 200,000.
  • the lower limit is more preferably 4,000 or more, and still more preferably 5,000 or more.
  • the upper limit is more preferably 100,000 or less, and even more preferably 50,000 or less.
  • the number average molecular weight (Mn) is preferably 1,000 to 50,000.
  • the lower limit is more preferably 2,000 or more, and still more preferably 3,000 or more.
  • the upper limit is more preferably 40,000 or less, and still more preferably 30,000 or less.
  • the polybenzoxazole precursor used in the present invention can be synthesized in consideration of the description in JP-A-2008-224970. Moreover, in this invention, it is preferable to seal
  • the end-capping with a monofunctional acid chloride can be synthesized at once, for example, by mixing the monofunctional acid chloride during the polymerization reaction.
  • the polyimide precursor of the first aspect preferably has a group in which an acid group is protected by an acid-decomposable group, and more preferably includes a repeating unit represented by the following general formula (3).
  • the repeating unit represented by the following general formula (3) is preferably contained in a proportion of 50 to 100 mol%, more preferably 70 to 100 mol% of the total repeating units of the polyimide precursor.
  • the photosensitive resin composition using the polyimide precursor of the first aspect is, for example, a photosensitive resin excellent in sensitivity and curability when used in combination with a photoacid generator that generates an acid having a pKa of 3 or less. A composition is easily obtained.
  • X 2 represents a tetravalent organic group
  • Y 2 represents a divalent organic group
  • R 8 represents an acid-decomposable group
  • R 9 represents a hydrogen atom, a crosslinkable group, an alkyl group.
  • Rc represents an alkyl group or an aryl group.
  • Examples of X 2 and Y 2 in the general formula (3) include the same as X 1 and Y 1 described in the general formula (2), and preferred ranges are also the same.
  • the acid-decomposable group represented by R 8 in the general formula (3), the crosslinkable group, the alkyl group, the acid-decomposable group, and the group represented by —CORc represented by R 9 are represented by R 6 in the general formula (2).
  • R 7 the same groups as the crosslinkable group, alkyl group, acid-decomposable group, and group represented by —CORc are mentioned, and the preferred range is also the same.
  • the polyimide precursor of the first aspect 5 to 80% of the acid groups of all the repeating units of the polyimide precursor are preferably protected with acid-decomposable groups, and 10 to 60% are preferably acid-decomposable groups. More preferably, it is protected by.
  • the lower limit is more preferably 15% or more.
  • the upper limit is more preferably 50% or less, and still more preferably 45% or less. According to this aspect, a highly sensitive photosensitive resin composition can be obtained. In particular, when the content of the acid-decomposable group is within the above range, the sensitivity is further improved.
  • the acid group which all the repeating units of a polyimide precursor here have means the acid group which all the repeating units of the polyimide precursor of the state before performing protection by an acid-decomposable group have.
  • the acid group is preferably a hydroxyl group directly bonded to an aromatic ring, and more preferably a phenolic hydroxyl group.
  • the polyimide precursor of the first aspect may contain a repeating unit represented by the general formula (5) described later. Moreover, the other repeating unit demonstrated with the polybenzoxazole precursor mentioned above may be included. Examples of the other repeating unit include the repeating unit represented by the general formula (a1) and the repeating unit represented by the general formula (a2).
  • the polyimide precursor of a 2nd aspect contains the repeating unit represented by following General formula (5).
  • the repeating unit represented by the following general formula (5) is preferably contained in a proportion of 50 to 100 mol%, more preferably 70 to 100 mol% of the total repeating units of the polyimide precursor.
  • X 4 represents a tetravalent organic group
  • Y 4 represents a divalent organic group
  • R 12 represents a hydrogen atom
  • R 13 represents a hydrogen atom, a crosslinkable group, an alkyl group
  • Rc represents an alkyl group or an aryl group.
  • Examples of X 4 and Y 4 in the general formula (5) include the same as X 1 and Y 1 described in the general formula (2), and preferred ranges are also the same.
  • the crosslinkable group, alkyl group, and group represented by —CORc represented by R 13 in the general formula (5) are represented by the crosslinkable group, alkyl group, and —CORc described in R 7 of the general formula (2). Examples thereof are the same as those described above, and preferred ranges are also the same.
  • R 12 and R 13 contained in all repeating units are preferably hydrogen atoms, and more preferably 60 to 95% are hydrogen atoms.
  • the lower limit is more preferably 70% or more.
  • the upper limit is more preferably 90% or less.
  • the photosensitive resin composition using the polyimide precursor of the second aspect further uses a quinonediazide compound as a photoacid generator, or a compound in which at least a part of the acid group is protected with an acid-decomposable group. By doing so, it is easy to obtain a photosensitive resin composition excellent in sensitivity.
  • the polyimide precursor of the second aspect may contain other repeating units described for the polybenzoxazole precursor described above.
  • Examples of the other repeating unit include the repeating unit represented by the general formula (a1) and the repeating unit represented by the general formula (a2).
  • the polyimide precursor preferably has a weight average molecular weight (Mw) of 3,000 to 200,000.
  • the lower limit is more preferably 4,000 or more, and still more preferably 5,000 or more.
  • the upper limit is more preferably 100,000 or less, and even more preferably 50,000 or less.
  • the number average molecular weight (Mn) is preferably 1,000 to 50,000.
  • the lower limit is more preferably 2,000 or more, and still more preferably 3,000 or more.
  • the upper limit is more preferably 40,000 or less, and still more preferably 30,000 or less. By setting it as this range, the lithography performance and the cured film physical properties can be made excellent.
  • the polyimide precursor used in the present invention can be synthesized by reacting tetracarboxylic dianhydride and diamine. For example, it can be synthesized in consideration of the description in JP-A-2014-66764.
  • the photosensitive resin composition of the present invention contains a thermal base generator represented by the following general formula (1).
  • the thermal base generator represented by the general formula (1) is also referred to as (B) thermal base generator.
  • R 1 represents a hydrogen atom or an n-valent organic group
  • R 2 to R 5 each independently represents a hydrogen atom or an alkyl group
  • n represents an integer of 1 or more.
  • R 1 represents a hydrogen atom or an n-valent organic group.
  • the organic group include an aliphatic group, an aromatic ring group, and a group formed by combining an aliphatic group or an aromatic ring group with a linking group described later.
  • the linking group include —COO—, —OCO—, —CO—, —O—, —S—, —SO—, —SO 2 —, or a linking group in which a plurality of these are linked. . -COO- and -OCO- are preferred.
  • Specific examples of the group formed by combining an aliphatic group or an aromatic ring group and a linking group include an alkoxycarbonyl group and an acyloxy group.
  • R 1 is preferably an aromatic ring group.
  • R 1 is preferably an aromatic ring group.
  • a base having a high boiling point can be easily generated at a lower temperature. By increasing the boiling point of the generated base, it is difficult to volatilize or decompose by heating during post-baking, and the cyclization of the resin can proceed more effectively.
  • R 1 is a monovalent aromatic ring group
  • examples of when R 1 is a monovalent aromatic ring group include an aryl group and a heteroaryl group, and an aryl group is preferred.
  • R 1 is a monovalent aliphatic group include an alkyl group and an alkenyl group.
  • the alkyl group preferably has 1 to 30 carbon atoms, more preferably 1 to 20 carbon atoms, and still more preferably 1 to 10 carbon atoms.
  • the alkyl group may be linear, branched or cyclic.
  • the alkyl group may have a substituent or may be unsubstituted. Specific examples of the alkyl group include a methyl group, an ethyl group, a tert-butyl group, a dodecyl group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, and an adamantyl group.
  • the alkenyl group has preferably 2 to 30 carbon atoms, more preferably 2 to 20 carbon atoms, still more preferably 2 to 10 carbon atoms.
  • the alkenyl group may be linear, branched or cyclic.
  • the alkenyl group may have a substituent or may be unsubstituted.
  • Examples of the alkenyl group include a vinyl group and a (meth) allyl group.
  • Examples of when R 1 is a divalent aliphatic group include groups in which one or more hydrogen atoms have been removed from the above monovalent aliphatic group.
  • the aromatic ring group may be monocyclic or polycyclic.
  • the aromatic ring group may be a heteroaromatic ring group containing a hetero atom.
  • the aromatic ring group may have a substituent or may be unsubstituted.
  • aromatic ring group examples include benzene ring, naphthalene ring, pentalene ring, indene ring, azulene ring, heptalene ring, indecene ring, perylene ring, pentacene ring, acenaphthalene ring, phenanthrene ring, anthracene ring, naphthacene ring, Chrysene ring, triphenylene ring, fluorene ring, biphenyl ring, pyrrole ring, furan ring, thiophene ring, imidazole ring, oxazole ring, thiazole ring, pyridine ring, pyrazine ring, pyrimidine ring, pyridazine ring, indolizine ring, indole ring, benzofuran Ring, benzothiophene ring, isobenzofuran ring, quinolidine
  • a plurality of aromatic rings may be linked via a single bond or a linking group described later.
  • the linking group include —COO—, —OCO—, —CO—, —O—, —S—, —SO—, —SO 2 —, an alkylene group (preferably a straight chain having 1 to 10 carbon atoms or A branched alkylene group), a cycloalkylene group (preferably a cycloalkylene group having 3 to 10 carbon atoms), or a linking group in which a plurality of these are linked.
  • a group consisting of an alkylene group, —O— and a combination thereof is preferred, and a combination of an alkylene group and —O— is more preferred.
  • the alkylene group and cycloalkylene group may be unsubstituted or may have a substituent.
  • substituent include those described later.
  • Specific examples of the aromatic ring group in which a plurality of aromatic rings are linked through a single bond or a linking group include biphenyl, diphenylmethane, diphenylpropane, diphenylisopropane, triphenylmethane, tetraphenylmethane, diphenoxymethane, di Examples include phenoxyethane.
  • the alkoxycarbonyl group preferably has 1 to 30 carbon atoms, more preferably 1 to 20 carbon atoms, and still more preferably 1 to 10 carbon atoms.
  • the alkoxycarbonyl group may be linear or branched.
  • the alkoxycarbonyl group may have a substituent or may be unsubstituted.
  • the acyloxy group preferably has 1 to 30 carbon atoms, more preferably 1 to 20 carbon atoms, and still more preferably 1 to 10 carbon atoms.
  • the acyloxy group may be linear or branched.
  • the acyloxy group may have a substituent or may be unsubstituted.
  • Examples of the substituent that the organic group represented by R 1 may have include, for example, a halogen atom such as a fluorine atom, a chlorine atom, a bromine atom and an iodine atom; an alkoxy such as a methoxy group, an ethoxy group and a tert-butoxy group Groups; aryloxy groups such as phenoxy group and p-tolyloxy group; alkoxycarbonyl groups such as methoxycarbonyl group, tert-butoxycarbonyl group and phenoxycarbonyl group; acyloxy groups such as acetoxy group, propionyloxy group and benzoyloxy group; Groups, benzoyl groups, isobutyryl groups, acryloyl groups, methacryloyl groups and methoxalyl groups, etc .; alkylsulfanyl groups such as methylsulfanyl groups and tert-butylsulfanyl groups;
  • R 2 to R 5 each independently represents a hydrogen atom or an alkyl group, preferably a hydrogen atom.
  • a compound in which R 2 to R 5 are represented by a hydrogen atom tends to generate a base by heating at a lower temperature.
  • the alkyl group preferably has 1 to 30 carbon atoms, more preferably 1 to 20, more preferably 1 to 10, still more preferably 1 to 5, and particularly preferably a methyl group.
  • the alkyl group may be linear or branched, and is preferably linear.
  • the alkyl group may have a substituent and may be unsubstituted, but is preferably unsubstituted.
  • n represents an integer of 1 or more, preferably 1 to 5, more preferably 1 to 4, and still more preferably 1 or 2.
  • the upper limit of n is the maximum number of substituents that an organic group can take when R 1 represents an organic group. In the case where R 1 represents a hydrogen atom, n is 1.
  • the molecular weight of the thermal base generator is preferably from 100 to 1,000.
  • the lower limit is more preferably 130 or more.
  • the upper limit is more preferably 500 or less.
  • the molecular weight value is a theoretical value obtained from the structural formula.
  • the thermal base generator is preferably a compound that generates a base when heated to 120 to 250 ° C., and more preferably a compound that generates a base at 120 to 200 ° C.
  • the base generation temperature is measured, for example, by using differential scanning calorimetry, heating the compound to 250 ° C. at 5 ° C./min in a pressure capsule, reading the peak temperature of the lowest exothermic peak, and measuring the peak temperature as the base generation temperature. can do.
  • the base generated by the thermal base generator is preferably a cyclic amine.
  • the boiling point of the base generated by the thermal base generator is preferably 80 ° C. or higher, preferably 100 ° C. or higher, and more preferably 140 ° C. or higher.
  • the molecular weight of the generated base is preferably 80 to 500.
  • the upper limit is more preferably 400 or less.
  • the molecular weight value is a theoretical value obtained from the structural formula.
  • thermal base generator examples include the following compounds. Needless to say, the present invention is not limited to these examples.
  • the content of the (B) thermal base generator is preferably 0.1 to 25 parts by mass with respect to 100 parts by mass of the total solid content of the photosensitive resin composition.
  • the lower limit is more preferably 0.5 parts by mass or more, and further preferably 1 part by mass or more.
  • the upper limit is more preferably 20 parts by mass or less, and further preferably 15 parts by mass or less. By setting it as such a range, it exists in the tendency for the effect of this invention to be exhibited more effectively.
  • the content of the (B) thermal base generator is preferably 0.1 to 25 parts by mass with respect to 100 parts by mass of the above-mentioned (A) resin.
  • the lower limit is more preferably 0.5 parts by mass or more, and further preferably 1 part by mass or more.
  • the upper limit is more preferably 20 parts by mass or less, and further preferably 15 parts by mass or less.
  • the photosensitive resin composition of the present invention contains a photoacid generator.
  • the photoacid generator is preferably a compound that reacts with actinic rays having a wavelength of 300 nm or more, preferably 300 to 450 nm, and generates an acid, but is not limited to its chemical structure.
  • a photoacid generator that is not directly sensitive to an actinic ray having a wavelength of 300 nm or more can also be used as a sensitizer if it is a compound that reacts with an actinic ray having a wavelength of 300 nm or more and generates an acid when used in combination with the sensitizer It can be preferably used in combination.
  • the photoacid generator include a photoacid generator that generates an acid having a pKa of 3 or less, and a quinonediazide compound.
  • the photoacid generator that generates an acid having a pKa of 3 or less includes a resin containing a group in which an acid group is protected by an acid-decomposable group, preferably a repeating unit represented by the above general formula (2) Combined use with a polybenzoxazole precursor (polybenzoxazole precursor of the first aspect) and / or a polyimide precursor containing the repeating unit represented by the general formula (3) (polyimide precursor of the first aspect) By doing so, it is easy to obtain a photosensitive resin composition excellent in sensitivity.
  • the polybenzoxazole precursor (polybenzoxazole precursor of 2nd aspect) containing the repeating unit represented by General formula (4) mentioned above, and / or the repeating unit represented by General formula (5)
  • Sensitive photosensitivity can be obtained by using together a polyimide precursor containing polyimide (polyimide precursor of the second embodiment) and a compound having a group in which at least a part of the acid group described later is protected by an acid-decomposable group. The resin composition is easily obtained.
  • the quinonediazide compound is a resin containing an acid group, preferably a polybenzoxazole precursor (polybenzoxazole precursor of the second embodiment) containing the repeating unit represented by the general formula (4) described above, and / Or
  • a polybenzoxazole precursor polybenzoxazole precursor of the second embodiment
  • the repeating unit represented by the general formula (4) described above and / Or
  • the photosensitive resin composition excellent in the sensitivity is easy to be obtained.
  • Photoacid generator that generates an acid having a pKa of 3 or less is preferably one that generates an acid having a pKa of 2 or less.
  • pKa basically refers to pKa in water at 25 ° C. Those that cannot be measured in water refer to those measured after changing to a solvent suitable for measurement.
  • the pKa described in the chemical handbook can be referred to.
  • the acid having a pKa of 3 or less is preferably sulfonic acid or phosphonic acid, and more preferably sulfonic acid.
  • photoacid generators examples include onium salt compounds, trichloromethyl-s-triazines, sulfonium salts, iodonium salts, quaternary ammonium salts, diazomethane compounds, imide sulfonate compounds, and oxime sulfonate compounds. .
  • onium salt compounds, imide sulfonate compounds, and oxime sulfonate compounds are preferable, and onium salt compounds and oxime sulfonate compounds are particularly preferable.
  • a photo-acid generator can be used individually by 1 type or in combination of 2 or more types.
  • trichloromethyl-s-triazines diaryliodonium salts, triarylsulfonium salts, quaternary ammonium salts, and diazomethane compounds
  • examples of trichloromethyl-s-triazines, diaryliodonium salts, triarylsulfonium salts, quaternary ammonium salts, and diazomethane compounds include compounds described in paragraph numbers 0083 to 0088 of JP2011-212494A; Examples of the compounds described in JP-A-2011-105645, paragraphs 0013 to 0049, and the contents thereof are incorporated in the present specification.
  • Specific examples of the imidosulfonate compound include compounds described in paragraph numbers 0065 to 0075 of WO2011 / 087011, and the contents thereof are incorporated in the present specification.
  • onium salt compounds examples include diphenyl iodonium salts, triarylsulfonium salts, sulfonium salts, benzothiazonium salts, tetrahydrothiophenium salts, and the like.
  • diphenyliodonium salt examples include diphenyliodonium tetrafluoroborate, diphenyliodonium hexafluorophosphonate, diphenyliodonium hexafluoroarsenate, diphenyliodonium trifluoromethanesulfonate, diphenyliodonium trifluoroacetate, diphenyliodonium-p-toluenesulfonate, diphenyliodonium Butyltris (2,6-difluorophenyl) borate, 4-methoxyphenylphenyliodonium tetrafluoroborate, bis (4-t-butylphenyl) iodonium tetrafluoroborate, bis (4-t-butylphenyl) iodonium hexafluoroarsenate Bis (4-tert-butylphenyl) iodonium trifluoro Tansul
  • triarylsulfonium salt examples include triphenylsulfonium tosylate, triphenylsulfonium trifluoromethanesulfonate, triphenylsulfonium camphorsulfonic acid, triphenylsulfonium tetrafluoroborate, triphenylsulfonium trifluoroacetate, triphenylsulfonium-p- Toluene sulfonate, triphenylsulfonium butyl tris (2,6-difluorophenyl) borate and the like can be mentioned. It is also preferable to use triarylsulfonium salts having the following structure.
  • sulfonium salt examples include alkylsulfonium salts, benzylsulfonium salts, dibenzylsulfonium salts, substituted benzylsulfonium salts, and the like.
  • alkylsulfonium salt examples include 4-acetoxyphenyldimethylsulfonium hexafluoroantimonate, 4-acetoxyphenyldimethylsulfonium hexafluoroarsenate, dimethyl-4- (benzyloxycarbonyloxy) phenylsulfonium hexafluoroantimonate, dimethyl-4- (Benzoyloxy) phenylsulfonium hexafluoroantimonate, dimethyl-4- (benzoyloxy) phenylsulfonium hexafluoroarsenate, dimethyl-3-chloro-4-acetoxyphenylsulfonium hexafluoroantimonate, and the like.
  • benzylsulfonium salt examples include benzyl-4-hydroxyphenylmethylsulfonium hexafluoroantimonate, benzyl-4-hydroxyphenylmethylsulfonium hexafluorophosphate, 4-acetoxyphenylbenzylmethylsulfonium hexafluoroantimonate, benzyl-4-methoxyphenyl Methylsulfonium hexafluoroantimonate, benzyl-2-methyl-4-hydroxyphenylmethylsulfonium hexafluoroantimonate, benzyl-3-chloro-4-hydroxyphenylmethylsulfonium hexafluoroarsenate, 4-methoxybenzyl-4-hydroxyphenyl Examples include methylsulfonium hexafluorophosphate.
  • dibenzylsulfonium salt examples include dibenzyl-4-hydroxyphenylsulfonium hexafluoroantimonate, dibenzyl-4-hydroxyphenylsulfonium hexafluorophosphate, 4-acetoxyphenyldibenzylsulfonium hexafluoroantimonate, dibenzyl-4-methoxyphenylsulfonium.
  • Hexafluoroantimonate dibenzyl-3-chloro-4-hydroxyphenylsulfonium hexafluoroarsenate, dibenzyl-3-methyl-4-hydroxy-5-t-butylphenylsulfonium hexafluoroantimonate, benzyl-4-methoxybenzyl- 4-hydroxyphenylsulfonium hexafluorophosphate and the like.
  • substituted benzylsulfonium salts include p-chlorobenzyl-4-hydroxyphenylmethylsulfonium hexafluoroantimonate, p-nitrobenzyl-4-hydroxyphenylmethylsulfonium hexafluoroantimonate, and p-chlorobenzyl-4-hydroxyphenylmethyl.
  • benzothiazonium salt examples include 3-benzylbenzothiazonium hexafluoroantimonate, 3-benzylbenzothiazonium hexafluorophosphate, 3-benzylbenzothiazonium tetrafluoroborate, 3- (p-methoxybenzyl) ) Benzothiazonium hexafluoroantimonate, 3-benzyl-2-methylthiobenzothiazonium hexafluoroantimonate, 3-benzyl-5-chlorobenzothiazonium hexafluoroantimonate, and the like.
  • tetrahydrothiophenium salt examples include 4,7-di-n-butoxy-1-naphthyltetrahydrothiophenium trifluoromethanesulfonate and 1- (4-n-butoxynaphthalen-1-yl) tetrahydrothiophenium trifluoromethane.
  • Preferred examples of the oxime sulfonate compound that is, a compound having an oxime sulfonate structure include compounds having an oxime sulfonate structure represented by the following general formula (B1-1).
  • R 21 represents an alkyl group or an aryl group. Wavy lines represent bonds with other groups.
  • any group may be substituted, and the alkyl group in R 21 may be linear, branched or cyclic. Acceptable substituents are described below.
  • the alkyl group for R 21 is preferably a linear or branched alkyl group having 1 to 10 carbon atoms.
  • the alkyl group represented by R 21 has a halogen atom, an aryl group having 6 to 11 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, or a cycloalkyl group (7,7-dimethyl-2-oxonorbornyl group). It may be substituted with a bridged alicyclic group, preferably a bicycloalkyl group or the like.
  • the aryl group for R 21 is preferably an aryl group having 6 to 11 carbon atoms, and more preferably a phenyl group or a naphthyl group.
  • the aryl group of R 21 may be substituted with a lower alkyl group, an alkoxy group, or a halogen atom.
  • the above compound containing an oxime sulfonate structure represented by the above general formula (B1-1) is also preferably an oxime sulfonate compound represented by the following general formula (B1-2).
  • R 42 represents an optionally substituted alkyl group or aryl group
  • X represents an alkyl group, an alkoxy group, or a halogen atom
  • m4 represents an integer of 0 to 3
  • the plurality of X may be the same or different.
  • the alkyl group as X is preferably a linear or branched alkyl group having 1 to 4 carbon atoms.
  • the alkoxy group as X is preferably a linear or branched alkoxy group having 1 to 4 carbon atoms.
  • the halogen atom as X is preferably a chlorine atom or a fluorine atom.
  • m4 is preferably 0 or 1.
  • m4 is 1
  • X is a methyl group
  • substitution position of X is the ortho position
  • R 42 is a linear alkyl group having 1 to 10 carbon atoms
  • 7,7- A compound that is a dimethyl-2-oxonorbornylmethyl group or a p-toluyl group is particularly preferred.
  • the compound containing an oxime sulfonate structure represented by the general formula (B1-1) is also preferably an oxime sulfonate compound represented by the following general formula (B1-3).
  • R 43 has the same meaning as R 42 in formula (B1-2), and X 1 represents a halogen atom, a hydroxyl group, an alkyl group having 1 to 4 carbon atoms, or an alkoxy group having 1 to 4 carbon atoms. Represents a group, a cyano group or a nitro group, and n4 represents an integer of 0 to 5.
  • R 43 in the above general formula (B1-3) is methyl group, ethyl group, n-propyl group, n-butyl group, n-octyl group, trifluoromethyl group, pentafluoroethyl group, perfluoro-n- A propyl group, a perfluoro-n-butyl group, a p-tolyl group, a 4-chlorophenyl group or a pentafluorophenyl group is preferable, and an n-octyl group is particularly preferable.
  • X 1 is preferably an alkoxy group having 1 to 5 carbon atoms, and more preferably a methoxy group.
  • n4 is preferably from 0 to 2, particularly preferably from 0 to 1.
  • the description in paragraphs 0080 to 0082 of JP2012-163937A can be referred to, and the contents thereof are described in this application. Incorporated in the description.
  • the compound containing an oxime sulfonate structure represented by the above general formula (B1-1) is also preferably a compound represented by the following general formula (OS-1).
  • R 101 represents a hydrogen atom, an alkyl group, an alkenyl group, an alkoxy group, an alkoxycarbonyl group, an acyl group, a carbamoyl group, a sulfamoyl group, a sulfo group, a cyano group, an aryl group, or Represents a heteroaryl group.
  • R 102 represents an alkyl group or an aryl group.
  • X 101 represents —O—, —S—, —NH—, —NR 105 —, —CH 2 —, —CR 106 H—, or —CR 105 R 107 —, wherein R 105 to R 107 are alkyl groups. Or an aryl group.
  • R 121 to R 124 each independently represents a hydrogen atom, a halogen atom, an alkyl group, an alkenyl group, an alkoxy group, an amino group, an alkoxycarbonyl group, an alkylcarbonyl group, an arylcarbonyl group, an amide group, a sulfo group, a cyano group, Or an aryl group is represented.
  • R 121 to R 124 may be bonded to each other to form a ring.
  • R 121 to R 124 are preferably a hydrogen atom, a halogen atom, and an alkyl group, and an embodiment in which at least two of R 121 to R 124 are bonded to each other to form an aryl group is also preferred.
  • an embodiment in which all of R 121 to R 124 are hydrogen atoms is preferable from the viewpoint of sensitivity.
  • Any of the aforementioned functional groups may further have a substituent.
  • the compound represented by the general formula (OS-1) is, for example, a compound represented by the general formula (OS-2) described in paragraph numbers 0087 to 0089 of JP2012-163937A Which is incorporated herein by reference.
  • the compound represented by the general formula (OS-1) include the compounds described in paragraph numbers 0128 to 0132 of JP2011-221494A (exemplary compounds b-1 to b-34). However, the present invention is not limited to this.
  • the compound having an oxime sulfonate structure represented by the general formula (B1-1) is represented by the following general formula (OS-3), the following general formula (OS-4) or the following general formula (OS-5). An oxime sulfonate compound is preferred.
  • R 22 , R 25 and R 28 each independently represents an alkyl group, an aryl group or a heteroaryl group
  • R 23 , R 26 and R 29 are Each independently represents a hydrogen atom, an alkyl group, an aryl group or a halogen atom
  • R 24 , R 27 and R 30 each independently represent a halogen atom, an alkyl group, an alkyloxy group, a sulfonic acid group, an aminosulfonyl group or an alkoxysulfonyl group.
  • X 1 to X 3 each independently represents an oxygen atom or a sulfur atom
  • n 1 to n 3 each independently represents 1 or 2
  • m 1 to m 3 each independently represents an integer of 0 to 6 To express.
  • the compound containing an oxime sulfonate structure represented by the above general formula (B1-1) is, for example, a compound represented by the general formula (OS-6) described in paragraph 0117 of JP2012-163937A. Particularly preferred is a compound represented by any of (OS-11), the contents of which are incorporated herein. Preferred ranges in the above general formulas (OS-6) to (OS-11) are preferred ranges of (OS-6) to (OS-11) described in paragraph numbers 0110 to 0112 of JP2011-221494A. The contents of which are incorporated herein by reference.
  • oxime sulfonate compound represented by the general formula (OS-3) to the general formula (OS-5) include compounds described in paragraph numbers 0114 to 0120 of JP2011-221494A. The contents of which are incorporated herein by reference. The present invention is not limited to these.
  • the compound containing an oxime sulfonate structure represented by the above general formula (B1-1) is also preferably an oxime sulfonate compound represented by the following general formula (B1-4).
  • R 1 represents an alkyl group or an aryl group
  • R 2 represents an alkyl group, an aryl group, or a heteroaryl group
  • R 3 to R 6 each represent a hydrogen atom, an alkyl group, an aryl group, or a halogen atom.
  • R 3 and R 4 , R 4 and R 5 , or R 5 and R 6 may be bonded to form an alicyclic ring or an aromatic ring.
  • X represents —O— or S—.
  • R 1 represents an alkyl group or an aryl group.
  • the alkyl group is preferably a branched alkyl group or a cyclic alkyl group.
  • the alkyl group preferably has 3 to 10 carbon atoms. In particular, when the alkyl group has a branched structure, an alkyl group having 3 to 6 carbon atoms is preferable. When the alkyl group has a cyclic structure, an alkyl group having 5 to 7 carbon atoms is preferable.
  • alkyl group examples include propyl group, isopropyl group, n-butyl group, s-butyl group, isobutyl group, tert-butyl group, pentyl group, isopentyl group, neopentyl group, 1,1-dimethylpropyl group, hexyl group. 2-ethylhexyl group, cyclohexyl group, octyl group and the like, preferably isopropyl group, tert-butyl group, neopentyl group, and cyclohexyl group.
  • the aryl group preferably has 6 to 12 carbon atoms, more preferably 6 to 8 carbon atoms, and still more preferably 6 to 7 carbon atoms.
  • Examples of the aryl group include a phenyl group and a naphthyl group, and a phenyl group is preferable.
  • the alkyl group and aryl group represented by R 1 may have a substituent.
  • substituents examples include a halogen atom (a fluorine atom, a chloro atom, a bromine atom, an iodine atom), a linear, branched or cyclic alkyl group (for example, a methyl group, an ethyl group, a propyl group, etc.), an alkenyl group, an alkynyl group, Aryl group, acyl group, alkoxycarbonyl group, aryloxycarbonyl group, carbamoyl group, cyano group, carboxyl group, hydroxyl group, alkoxy group, aryloxy group, alkylthio group, arylthio group, heterocyclic oxy group, acyloxy group, amino group, A nitro group, a hydrazino group, a heterocyclic group, etc. are mentioned. Further, these groups may be further substituted. Preferably, they are a halogen atom and a methyl group.
  • R 1 is preferably an alkyl group, and from the viewpoint of achieving both storage stability and sensitivity, R 1 is an alkyl group having a branched structure having 3 to 6 carbon atoms and a cyclic group having 5 to 7 carbon atoms.
  • An alkyl group having a structure or a phenyl group is preferable, and an alkyl group having a branched structure having 3 to 6 carbon atoms or an alkyl group having a cyclic structure having 5 to 7 carbon atoms is more preferable.
  • an isopropyl group, a tert-butyl group, a neopentyl group, and a cyclohexyl group are preferable, and a tert-butyl group and a cyclohexyl group are more preferable.
  • R 2 represents an alkyl group, an aryl group, or a heteroaryl group.
  • the alkyl group represented by R 2 is preferably a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms.
  • Examples of the alkyl group include a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, a tert-butyl group, a pentyl group, a neopentyl group, a hexyl group, and a cyclohexyl group. It is a group.
  • As the aryl group an aryl group having 6 to 10 carbon atoms is preferable.
  • Examples of the aryl group include a phenyl group, a naphthyl group, a p-toluyl group (p-methylphenyl group), and a phenyl group and a p-toluyl group are preferable.
  • Examples of the heteroaryl group include a pyrrole group, an indole group, a carbazole group, a furan group, and a thiophene group.
  • the alkyl group, aryl group, and heteroaryl group represented by R 2 may have a substituent. Examples of the substituent include an alkyl group and an aryl group R 1 represents is same as the substituents which may be possessed.
  • R 2 is preferably an alkyl group or an aryl group, more preferably an aryl group, and more preferably a phenyl group.
  • As the substituent for the phenyl group a methyl group is preferred.
  • R 3 to R 6 each represent a hydrogen atom, an alkyl group, an aryl group, or a halogen atom (a fluorine atom, a chloro atom, a bromine atom, or an iodine atom).
  • the alkyl group represented by R 3 to R 6 has the same meaning as the alkyl group represented by R 2 , and the preferred range is also the same.
  • the aryl group represented by R 3 to R 6 has the same meaning as the aryl group represented by R 1 , and the preferred range is also the same.
  • R 3 to R 6 , R 3 and R 4 , R 4 and R 5 , or R 5 and R 6 may combine to form a ring, and the ring forms an alicyclic ring or an aromatic ring. It is preferable that a benzene ring is more preferable.
  • R 3 to R 6 are a hydrogen atom, an alkyl group, a halogen atom (fluorine atom, chloro atom, bromine atom), or R 3 and R 4 , R 4 and R 5 , or R 5 and R 6 It preferably constitutes a benzene ring, and a hydrogen atom, a methyl group, a fluorine atom, a chloro atom, a bromine atom, or R 3 and R 4 , R 4 and R 5 , or R 5 and R 6 are bonded to form a benzene ring Is more preferable.
  • Preferred embodiments of R 3 to R 6 are as follows. (Aspect 1) At least two are hydrogen atoms.
  • Ts represents a tosyl group (p-toluenesulfonyl group)
  • Me represents a methyl group
  • Bu represents an n-butyl group
  • Ph represents a phenyl group.
  • an imide sulfonate compound having a structure represented by the following general formula (B2) can be preferably used.
  • R 200 represents a monovalent organic group having 16 or less carbon atoms.
  • the wavy line represents a bond with another group.
  • R 200 represents a monovalent organic group having 16 or less carbon atoms.
  • R 200 preferably does not contain other than C, H, O, and F.
  • examples of R 200 include a methyl group, a trifluoromethyl group, a propyl group, a phenyl group, and a tosyl group.
  • a preferred embodiment of the compound containing the structure represented by the general formula (B2) is an imide sulfonate compound represented by the following general formula (I).
  • R 1 and R 2 each represent a group represented by the following general formula (A) or a hydrogen atom.
  • R 3 represents an aliphatic hydrocarbon group having 1 to 18 carbon atoms which may be substituted with any one or more of a halogen atom, an alkylthio group and an alicyclic hydrocarbon group, a halogen atom, an alkylthio group, an alkyl group and an acyl
  • B represents the group represented by the following general formula (B).
  • X 1 represents an oxygen atom or a sulfur atom
  • Y 1 represents a single bond or an alkylene group having 1 to 4 carbon atoms
  • R 4 represents a hydrocarbon group having 1 to 12 carbon atoms.
  • R 5 represents an alkylene group having 1 to 4 carbon atoms
  • R 6 represents a hydrogen atom, an optionally branched alkyl group having 1 to 4 carbon atoms, or an alicyclic carbon atom having 3 to 10 carbon atoms. Represents a hydrogen group, a heterocyclic group, or a hydroxyl group.
  • n represents an integer of 0 to 5. When n is 2 to 5, a plurality of R 5 may be the same or different.
  • X 1 represents an oxygen atom or a sulfur atom
  • Y 1 represents a single bond or an alkanediyl group having 1 to 4 carbon atoms
  • R 11 represents a hydrocarbon group having 1 to 12 carbon atoms
  • R 12 represents an alkanediyl group having 1 to 4 carbon atoms
  • R 13 represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms which may have a branch or an alicyclic hydrocarbon having 3 to 10 carbon atoms.
  • m represents 0 to 5, and when m is 2 to 5, a plurality of R 12 may be the same or different.
  • Y 2 represents a single bond or an alkylene group having 1 to 4 carbon atoms
  • R 7 represents an alkylene group having 2 to 6 carbon atoms, a halogenated alkylene group having 2 to 6 carbon atoms
  • carbon Represents an arylene group having 6 to 20 carbon atoms, or a halogenated arylene group having 6 to 20 carbon atoms
  • R 8 represents a single bond, an alkylene group having 2 to 6 carbon atoms, a halogenated alkylene group having 2 to 6 carbon atoms, carbon Represents an arylene group having 6 to 20 carbon atoms or a halogenated arylene group having 6 to 20 carbon atoms
  • R 9 represents an alkyl group having 1 to 18 carbon atoms which may be branched, or 1 to 1 carbon atoms which may be branched.
  • a and b each independently represents 0 or 1, and at least one of a and b is 1.
  • quinonediazide compound a 1,2-quinonediazide compound that generates a carboxylic acid upon irradiation with actinic rays can be preferably used.
  • a condensate of a phenolic compound or an alcoholic compound (hereinafter referred to as “mother nucleus”) and 1,2-naphthoquinonediazidesulfonic acid halide can be used.
  • description of paragraphs 0075 to 0078 of JP2012-088459A can be referred to, and the contents thereof are incorporated in the present specification.
  • condensation reaction In the condensation reaction of a phenolic compound or an alcoholic compound (mother nucleus) and 1,2-naphthoquinonediazidesulfonic acid halide, preferably 30 to 85 moles relative to the number of OH groups in the phenolic compound or alcoholic compound. %, More preferably 1,2-naphthoquinonediazide sulfonic acid halide corresponding to 50 to 70 mol% can be used.
  • the condensation reaction can be carried out by a known method.
  • 1,2-quinonediazide compound examples include 1,2-naphthoquinonediazidesulfonic acid amides in which the ester bond of the mother nucleus exemplified above is changed to an amide bond, such as 2,3,4-triaminobenzophenone-1,2-naphtho Quinonediazide-4-sulfonic acid amide and the like are also preferably used.
  • the content of the photoacid generator that generates an acid having a pKa of 3 or less is The amount is preferably 0.1 to 20 parts by mass with respect to 100 parts by mass of the total solid components of the photosensitive resin composition.
  • the lower limit is more preferably 0.2 parts by mass or more, and further preferably 0.5 parts by mass or more.
  • the upper limit is more preferably 10 parts by mass or less, and still more preferably 5 parts by mass or less.
  • the photoacid generator that generates an acid having a pKa of 3 or less may be used alone or in combination of two or more.
  • the total amount becomes the said range.
  • the photosensitive resin composition of the present invention contains a quinonediazide compound as a photoacid generator
  • the content of the quinonediazide compound is 1 to 40 parts by mass with respect to 100 parts by mass of the total solid content in the photosensitive resin composition.
  • the lower limit is more preferably 2 parts by mass or more, and still more preferably 10 parts by mass or more.
  • the upper limit is more preferably 35 parts by mass or less, and still more preferably 30 parts by mass or less.
  • the photosensitive resin composition of the present invention contains a solvent.
  • the photosensitive resin composition of the present invention is preferably prepared as a solution in which the essential components of the present invention and further optional components described below are dissolved in a solvent.
  • the solvent is preferably a solvent that dissolves essential components and optional components and does not react with each component. In the present invention, a known solvent can be used as the solvent.
  • ethylene glycol monoalkyl ethers for example, ethylene glycol monoalkyl ethers, ethylene glycol dialkyl ethers, ethylene glycol monoalkyl ether acetates, propylene glycol monoalkyl ethers, propylene glycol dialkyl ethers, propylene glycol monoalkyl ether acetates, diethylene glycol dialkyl ethers (for example, Diethylene glycol diethyl ether, diethylene glycol methyl ethyl ether, etc.), diethylene glycol monoalkyl ether acetates, dipropylene glycol monoalkyl ethers, dipropylene glycol dialkyl ethers, dipropylene glycol monoalkyl ether acetates, esters, ketones, amides And lactones Kill.
  • the solvent described in paragraph Nos. 0174 to 0178 of JP2011-221494A and the solvent described in paragraph numbers 0167 to 0168 of JP2012-194290A are also
  • propylene glycol monoalkyl ether acetates and dialkyl ethers diacetates and diethylene glycol dialkyl ethers, or esters and butylene glycol alkyl ether acetates in combination.
  • the solvent is preferably a solvent having a boiling point of 130 ° C. or higher and lower than 160 ° C., a solvent having a boiling point of 160 ° C. or higher, or a mixture thereof.
  • Solvents having a boiling point of 130 ° C. or higher and lower than 160 ° C. include propylene glycol monomethyl ether acetate (boiling point 146 ° C.), propylene glycol monoethyl ether acetate (boiling point 158 ° C.), propylene glycol methyl-n-butyl ether (boiling point 155 ° C.), propylene glycol An example is methyl-n-propyl ether (boiling point 131 ° C.).
  • Solvents having a boiling point of 160 ° C or higher include ethyl 3-ethoxypropionate (boiling point 170 ° C), diethylene glycol methyl ethyl ether (boiling point 176 ° C), propylene glycol monomethyl ether propionate (boiling point 160 ° C), dipropylene glycol methyl ether acetate.
  • the content of the solvent in the photosensitive resin composition of the present invention is preferably 50 to 95 parts by mass with respect to 100 parts by mass of all components in the photosensitive resin composition.
  • the lower limit is more preferably 60 parts by mass or more.
  • the upper limit is more preferably 90 parts by mass or less. Only one type of solvent may be used, or two or more types may be used. When using 2 or more types, it is preferable that the total amount becomes the said range.
  • the photosensitive resin composition of the present invention can contain a compound (also referred to as (E) compound) having a group in which at least a part of the acid group is protected with an acid-decomposable group.
  • a compound having a group in which at least a part of the acid group is protected by an acid-decomposable group means that at least a part of the acid group is protected by a protecting group, and the protecting group is eliminated by the action of an acid to be alkali-soluble. Is a compound that increases.
  • the compound (D) plays a role of decreasing the alkali solubility in the non-exposed area and increasing the alkali solubility in the exposed area.
  • the acid group a carboxy group or a phenolic hydroxyl group is preferable.
  • the compound (E) is a compound different from the resin (A).
  • the acid-decomposable group is not particularly limited as long as it is a group that decomposes by the action of an acid, and examples thereof include an acetal group, a ketal group, a silyl group, a silyl ether group, and a tertiary alkyl ester group. In view of the above, an acetal group is preferable.
  • the protecting group examples include tert-butoxycarbonyl group, isopropoxycarbonyl group, tetrahydropyranyl group, tetrahydrofuranyl group, ethoxyethyl group, methoxyethyl group, ethoxymethyl group, trimethylsilyl group, tert-butoxycarbonylmethyl group, And trimethylsilyl ether group. From the viewpoint of sensitivity, an ethoxyethyl group and a tetrahydrofuranyl group are preferred.
  • the compound (E) may be a polymer (for example, Mw (weight average molecular weight) exceeding 5000 or even exceeding 10,000) or a low molecule (for example, 5000 or less).
  • Molecules are preferable, and the molecular weight is preferably 3000 or less, and more preferably 1000 or less.
  • As a lower limit of molecular weight 150 or more are preferred and 300 or more are more preferred.
  • (E) It is preferable that a compound contains either an aromatic ring, a heterocyclic ring, or an alicyclic structure from a viewpoint of a dissolution inhibitory ability improvement. Moreover, it is preferable that (E) compound has 2 or more of acid groups protected in the molecule
  • the compound (E) is preferably a compound represented by the following general formula (E1).
  • R 21 represents a monovalent to hexavalent organic group
  • R 22 and R 23 each independently represents a hydrogen atom, an alkyl group or an aryl group
  • R 22 and R Any one of 23 is an alkyl group or an aryl group
  • R 24 represents an alkyl group or an aryl group
  • R 24 may be bonded to R 22 or R 23 to form a cyclic ether
  • n 1 Represents an integer of 1 to 6.
  • R 22 and R 23 each independently represent a hydrogen atom, an alkyl group or an aryl group, and at least one of R 22 and R 23 is an alkyl group or an aryl group.
  • an alkyl group having 1 to 10 carbon atoms is preferable, an alkyl group having 1 to 8 carbon atoms is more preferable, an alkyl group having 1 to 6 carbon atoms is more preferable, and an alkyl group having 1 to 4 carbon atoms is particularly preferable.
  • the alkyl group may have a substituent.
  • the alkyl group may be linear, branched or cyclic, but is preferably a linear alkyl group.
  • an aryl group having 6 to 20 carbon atoms is preferable, an aryl group having 6 to 14 carbon atoms is more preferable, and an aryl group having 6 to 10 carbon atoms is further preferable.
  • the aryl group may have a substituent.
  • R 24 represents an alkyl group or an aryl group, and may combine with R 22 or R 23 to form a cyclic ether.
  • the alkyl group is preferably an alkyl group having 1 to 16 carbon atoms, more preferably an alkyl group having 1 to 10 carbon atoms, still more preferably an alkyl group having 1 to 6 carbon atoms, and further an alkyl group having 1 to 4 carbon atoms. preferable.
  • the aryl group an aryl group having 6 to 20 carbon atoms is preferable, an aryl group having 6 to 14 carbon atoms is more preferable, and an aryl group having 6 to 10 carbon atoms is further preferable.
  • R 24 may be linked to R 22 or R 23 to form a cyclic ether.
  • the cyclic ether formed by linking with R 22 or R 23 is preferably a 3- to 6-membered cyclic ether, more preferably a 5- to 6-membered cyclic ether.
  • R 22 and R 23 are preferably a hydrogen atom or an alkyl group having 1 to 4 carbon atoms.
  • R 24 is preferably bonded to an alkyl group having 1 to 4 carbon atoms, R 22 or R 23 to form a tetrahydrofuranyl group.
  • R 22 to R 24 may have a substituent.
  • substituents include an alkyl group having 1 to 6 carbon atoms and a halogen atom (a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom), and these substituents may further have a substituent.
  • R 21 represents a monovalent to hexavalent organic group.
  • R 21 is preferably a monovalent to hexavalent organic group having a molecular weight of 2000 or less, more preferably a 1 to 6 valent organic group having a molecular weight of 1500 or less, and further preferably a 1 to 6 valent organic group having a molecular weight of 1000 or less.
  • the organic group represented by R 21 is preferably an organic group containing an aromatic ring or a heterocyclic ring and containing no atoms other than C, H, O and N atoms, and is an organic group containing a cyclic structure and / or a carbonyl group.
  • R 21 is preferably the following organic group when the acid group is a phenolic hydroxy group.
  • a wavy line represents a bonding site with an oxygen atom
  • R 1 and R 2 each independently represent a hydrogen atom or an alkyl group having 1 to 10 carbon atoms
  • m and n each independently represents 0 to 4 Represents an integer.
  • R 21 is preferably the following organic group when the acid group is a carboxy group.
  • a wavy line represents a bonding site with an oxygen atom
  • R 1 and R 2 each independently represent a hydrogen atom or an alkyl group having 1 to 10 carbon atoms (preferably an alkyl group having 1 to 8 carbon atoms).
  • M and n each independently represents an integer of 0 to 4 (preferably 0).
  • Specific examples of the compound represented by the general formula (E1) include the following compounds, but the present invention is not particularly limited thereto.
  • the compound (E) is preferably a compound represented by the following general formula (E2).
  • General formula (E2) (In General Formula (E2), R 1 represents an n1-valent organic group. Ar represents an aryl group which may be substituted. A represents an integer of 0 or more. N1 represents an integer of 2 or more. Where n1-a is an integer of 1 or more.)
  • R 1 represents an n1-valent organic group, preferably a divalent to octavalent organic group, more preferably a divalent to hexavalent organic group.
  • R 1 is preferably a hydrocarbon group having 2 to 15 carbon atoms, or a group mainly having a hydrocarbon group in which 1 to 2 oxygen atoms form an ether bond in the hydrocarbon group.
  • R 1 represents an aliphatic hydrocarbon structure (for example, a linear alkylene structure, a branched alkylene structure, a cycloalkylene structure, a norbornane structure, a norbornene structure, a norbornane skeleton, or a structure in which a norbornene skeleton and a cycloalkylene skeleton are condensed). ), Aromatic hydrocarbon structures (such as benzene structures), aralkyl structures, structures in which these structures are combined, structures in which these structures are combined through ether bonds, and other tetrahydropyran structures The structure can be mentioned.
  • an alkylene structure, an alicyclic structure, an ether structure, an aralkyl structure, or a combination thereof is particularly preferable as a basic skeleton.
  • Ar represents an optionally substituted aryl group.
  • aryl group an aryl group having 6 to 20 carbon atoms is preferable, an aryl group having 6 to 14 carbon atoms is more preferable, and an aryl group having 6 to 10 carbon atoms is further preferable.
  • Specific examples of the aryl group include a phenyl group, a toluyl group, a mesityl group, and a naphthyl group.
  • a represents an integer of 0 or more, preferably an integer of 0 to 3, and more preferably 0.
  • n represents an integer of 2 or more, preferably an integer of 2 to 8, more preferably an integer of 2 to 6, and more preferably 2.
  • N1-a is an integer of 1 or more, preferably 1-7.
  • Ar represents an optionally substituted aryl group, and specific examples thereof include a phenyl group and a naphthyl group. Examples of the substituent include a halogen atom such as a chlorine atom; a methyl group, a tert-butyl group and the like.
  • Preferred examples include alkyl groups; alkoxy groups such as methoxy groups.
  • the compound (E) is also preferably a compound having a repeating unit represented by the following general formula (E3).
  • General formula (E3) (In General Formula (E3), R 22 and R 23 each independently represent a hydrogen atom, an alkyl group, or an aryl group, and either one of R 22 and R 23 is an alkyl group or an aryl group.
  • 24 represents an alkyl group or an aryl group, and may combine with R 22 or R 23 to form a cyclic ether, R 25 represents a hydrogen atom or a methyl group, and X represents a divalent organic group. Represents.
  • R 22 to R 24 have the same meanings as R 22 to R 24 in formula (E1), and the preferred ranges are also the same.
  • X represents a divalent organic group. Examples of the divalent organic group represented by X include a phenylene group, a carbonyl group, and a p-phenylenecarbonyl group. Preferable specific examples of the compound having a repeating unit represented by the general formula (E3) include a polymer having any one of the following structural units.
  • R 25 represents a hydrogen atom or a methyl group.
  • the weight average molecular weight of the compound having a repeating unit represented by the general formula (E3) is preferably 2000 to 50000, and more preferably 3000 to 20000.
  • the compound having the repeating unit represented by the general formula (E3) is used as the (E) compound, it is preferable to copolymerize other components from the viewpoint of compatibility with (A) resin and developability.
  • Other components are not particularly limited as long as they can be copolymerized with a compound having a repeating unit represented by formula (E3).
  • the other component is preferably a compound having a repeating unit represented by the following general formula (E4).
  • General formula (E4) (In the general formula (E4), R 41 represents a hydrogen atom or a methyl group, X represents a single bond or a divalent organic group, R 42 represents an aryl group which may have a substituent, or Represents a hydroxyl group.)
  • X represents a single bond or a divalent organic group.
  • Examples of the divalent organic group represented by X include a phenylene group, a carbonyl group, a carboxyl group, and a p-phenylenecarbonyl group.
  • R 42 is an optionally substituted aryl group, or a hydroxyl group, a aryl group which may have a substituent group, in the general formula (E1) with the same meaning as the aryl group R 22 is represented, The preferred range is also the same.
  • the aryl group may have a substituent.
  • substituents examples include an alkyl group having 1 to 6 carbon atoms, a halogen atom (a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom), a hydroxyl group, and the like, and these substituents may further have a substituent. Good.
  • Preferable specific examples of the compound having a repeating unit represented by the general formula (E4) include a polymer having any one of the following structural units.
  • R 4 represents a hydrogen atom or a methyl group.
  • the compound having a repeating unit represented by the general formula (E4) is preferably (1) to (3) from the viewpoint of compatibility with the resin (A), and (4) to (5) from the viewpoint of developability. Is preferred.
  • the content of the compound (E) is preferably 5 to 50 parts by weight with respect to 100 parts by weight of the resin (A), and 10 to 40 parts by weight. Part is more preferred. By setting the content to 5 to 50 parts by mass, film physical properties and sensitivity can be improved. Moreover, 2 or more types of (E) compounds can be used, and when using 2 or more types, it is preferable that the total amount becomes the said range.
  • the photosensitive resin composition of the present invention may contain an adhesion improving agent.
  • the adhesion improving agent include alkoxysilane compounds.
  • the alkoxysilane compound is a compound that improves the adhesion between an insulating material and an inorganic material serving as a base material, for example, a silicon compound such as silicon, silicon oxide, or silicon nitride, or a metal such as gold, copper, molybdenum, titanium, or aluminum. It is preferable.
  • adhesion improving agent examples include ⁇ -aminopropyltrimethoxysilane, ⁇ -aminopropyltriethoxysilane, 3-glycidoxypropyltrimethoxysilane, ⁇ -glycidoxypropyltrimethoxysilane and the like.
  • ⁇ -methacryloxypropyltrialkoxysilane such as glycidoxypropyltrialkoxysilane, ⁇ -glycidoxypropyl dialkoxysilane, 3-methacryloxypropylmethyldimethoxysilane, ⁇ -methacryloxypropyl dialkoxysilane, ⁇ -chloropropyl Examples include trialkoxysilane, ⁇ -mercaptopropyltrialkoxysilane, ⁇ - (3,4-epoxycyclohexyl) ethyltrialkoxysilane, and vinyltrialkoxysilane.
  • ⁇ -glycidoxypropyltrialkoxysilane and ⁇ -methacryloxypropyltrialkoxysilane are preferred, ⁇ -glycidoxypropyltrialkoxysilane is more preferred, 3-methacryloxypropylmethyldimethoxysilane, Sidoxypropyltrimethoxysilane is more preferred.
  • the content of the adhesion improving agent is preferably 0.001 to 15 parts by mass and more preferably 0.005 to 10 parts by mass with respect to 100 parts by mass of the total solid component of the photosensitive resin composition. Only one type of adhesion improver may be used, or two or more types may be used. When using 2 or more types, it is preferable that a total amount becomes the said range.
  • the photosensitive resin composition of the present invention may contain a sensitizer.
  • the sensitizer absorbs actinic rays and enters an electronically excited state.
  • the sensitizer in an electronically excited state comes into contact with the photoacid generator, and effects such as electron transfer, energy transfer, and heat generation occur.
  • a photo-acid generator raise
  • disassembly of a photo-acid generator can be accelerated
  • preferred sensitizers include compounds belonging to the following compounds and having an absorption wavelength in the wavelength region of 350 to 450 nm.
  • Polynuclear aromatics eg, pyrene, perylene, triphenylene, anthracene, 9,10-dibutoxyanthracene, 9,10-diethoxyanthracene, 3,7-dimethoxyanthracene, 9,10-dipropyloxyanthracene
  • xanthenes Eg, fluorescein, eosin, erythrosine, rhodamine B, rose bengal
  • xanthones eg, xanthone, thioxanthone, dimethylthioxanthone, diethylthioxanthone
  • cyanines eg, thiacarbocyanine, oxacarbocyanine
  • merocyanines For example, merocyanine, carbomerocyanine), rhodocyanines, oxonols, thiazines (eg, thionine, methylene blue, to
  • polynuclear aromatics polynuclear aromatics, acridones, styryls, base styryls, and coumarins are preferable, and polynuclear aromatics are more preferable.
  • polynuclear aromatics anthracene derivatives are most preferred.
  • the content of the sensitizer is 0.001 to 100 parts by mass with respect to 100 parts by mass of the total solid components in the photosensitive resin composition. It is preferable.
  • the lower limit is more preferably 0.1 parts by mass or more, and still more preferably 0.5 parts by mass or more.
  • the lower limit is more preferably 50 parts by mass or less, and still more preferably 20 parts by mass or less.
  • Two or more sensitizers can be used in combination. When two or more sensitizers are used in combination, the total amount is preferably within the above range.
  • the photosensitive resin composition of the present invention may contain a crosslinking agent.
  • a crosslinking agent By containing a crosslinking agent, a harder cured film can be obtained.
  • the crosslinking agent is not limited as long as a crosslinking reaction is caused by heat. Examples thereof include compounds having two or more epoxy groups or oxetanyl groups in the molecule, blocked isocyanate compounds, alkoxymethyl group-containing crosslinking agents, compounds having ethylenically unsaturated double bonds, and the like. A compound having an epoxy group is preferred.
  • Examples of the compound having two or more epoxy groups in the molecule include bisphenol A type epoxy resin, bisphenol F type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, aliphatic epoxy resin and the like. These are available as commercial products. Examples include JER152, JER157S70, JER157S65, JER175S70, JER806, JER828, JER1007 (manufactured by Mitsubishi Chemical Holdings Co., Ltd.) and other commercial products described in paragraph number 0189 of JP2011-212494.
  • Aron oxetane OXT-121, OXT-221, OX-SQ, PNOX (above, manufactured by Toagosei Co., Ltd.) can be used.
  • the compound containing an oxetanyl group may be used alone or in combination with a compound containing an epoxy group.
  • a blocked isocyanate compound can also be preferably employed as a crosslinking agent.
  • the blocked isocyanate compound is preferably a compound having two or more blocked isocyanate groups in one molecule from the viewpoint of curability.
  • the blocked isocyanate group in this invention is a group which can produce
  • the group which reacted the blocking agent and the isocyanate group and protected the isocyanate group can illustrate preferably.
  • the blocked isocyanate group is preferably a group capable of generating an isocyanate group by heating at 90 ° C. to 250 ° C.
  • the skeleton of the blocked isocyanate compound is not particularly limited, and any skeleton may be used as long as it has two isocyanate groups in one molecule.
  • any skeleton may be used as long as it has two isocyanate groups in one molecule.
  • aliphatic, alicyclic or aromatic polyisocyanate can be mentioned.
  • 2,4-tolylene diisocyanate 2,6-tolylene diisocyanate, isophorone diisocyanate, 1,6-hexamethylene diisocyanate, 1,3-trimethylene diisocyanate, 1,4-tetramethylene diisocyanate, 2,2,4-trimethylhexamethylene diisocyanate, 2,4,4-trimethylhexamethylene diisocyanate, 1,9-nonamethylene diisocyanate, 1,10-decamethylene diisocyanate, 1,4-cyclohexane diisocyanate, 2,2'- Diethyl ether diisocyanate, diphenylmethane-4,4′-diisocyanate, o-xylene diisocyanate, m-xylene diisocyanate, p-xylene diisocyanate, methylene bis (cyclohexane Isocyanate), cyclohexane-1,3-dimethylene diisocyanate
  • tolylene diisocyanate (TDI), diphenylmethane diisocyanate (MDI), hexamethylene diisocyanate (HDI), and isophorone diisocyanate (IPDI) are particularly preferable.
  • the matrix structure of the blocked isocyanate compound include biuret type, isocyanurate type, adduct type, and bifunctional prepolymer type.
  • the blocking agent that forms the block structure of the blocked isocyanate compound include an oxime compound, a lactam compound, a phenol compound, an alcohol compound, an amine compound, an active methylene compound, a pyrazole compound, a mercaptan compound, an imidazole compound, and an imide compound.
  • a blocking agent selected from oxime compounds, lactam compounds, phenol compounds, alcohol compounds, amine compounds, active methylene compounds, and pyrazole compounds is particularly preferable.
  • Examples of the oxime compound include oxime and ketoxime, and specific examples include acetoxime, formaldoxime, cyclohexane oxime, methyl ethyl ketone oxime, cyclohexanone oxime, benzophenone oxime, and acetoxime.
  • Examples of the lactam compound include ⁇ -caprolactam and ⁇ -butyrolactam.
  • Examples of the phenol compound include phenol, naphthol, cresol, xylenol, and halogen-substituted phenol.
  • Examples of the alcohol compound include methanol, ethanol, propanol, butanol, cyclohexanol, ethylene glycol monoalkyl ether, propylene glycol monoalkyl ether, alkyl lactate and the like.
  • Examples of the amine compound include primary amines and secondary amines, which may be aromatic amines, aliphatic amines, and alicyclic amines, and examples thereof include aniline, diphenylamine, ethyleneimine, and polyethyleneimine.
  • Examples of the active methylene compound include diethyl malonate, dimethyl malonate, ethyl acetoacetate, methyl acetoacetate and the like.
  • Examples of the pyrazole compound include pyrazole, methylpyrazole, dimethylpyrazole and the like.
  • Examples of mercaptan compounds include alkyl mercaptans and aryl mercaptans.
  • the blocked isocyanate compound is available as a commercial product.
  • Coronate AP Stable M Coronate 2503, 2515, 2507, 2513, 2555, Millionate MS-50 (above, manufactured by Nippon Polyurethane Industry Co., Ltd.), Takenate B -830, B-815N, B-820NSU, B-842N, B-846N, B-870N, B-874N, B-882N (manufactured by Mitsui Chemicals, Inc.), Duranate 17B-60PX, 17B-60P, TPA-B80X, TPA-B80E, MF-B60X, MF-B60B, MF-K60X, MF-K60B, MFA-100, E402-B80B, SBN-70D, SBB-70P, K6000 (above, manufactured by Asahi Kasei Chemicals Corporation) ), Death Module BL1100, BL12 5 MPA / X, BL3575 / 1,
  • alkoxymethyl group-containing crosslinking agents described in paragraph numbers 0107 to 0108 of JP2012-8223A, compounds having an ethylenically unsaturated double bond, and the like can be preferably used. The contents are incorporated herein.
  • alkoxymethyl group-containing crosslinking agent alkoxymethylated glycoluril is preferable.
  • the content of the crosslinking agent is preferably 0.01 to 50 parts by mass with respect to 100 parts by mass in total of the polymer component (A).
  • the lower limit is more preferably 0.1 parts by mass or more, and still more preferably 0.5 parts by mass or more.
  • the upper limit is more preferably 30 parts by mass or less, and still more preferably 20 parts by mass or less. If it is this range, the cured film excellent in mechanical strength and solvent resistance will be obtained.
  • Only one type of crosslinking agent may be used, or two or more types may be used. When using 2 or more types, it is preferable that the total amount becomes the said range.
  • the photosensitive resin composition of the present invention may contain a basic compound.
  • the basic compound can be arbitrarily selected from those used in the chemically amplified positive photosensitive resin composition. Examples include aliphatic amines, aromatic amines, heterocyclic amines, quaternary ammonium hydroxides, quaternary ammonium salts of carboxylic acids, and the like. Specific examples thereof include compounds described in JP-A 2011-212494, paragraphs 0204 to 0207, the contents of which are incorporated herein.
  • aliphatic amine examples include trimethylamine, diethylamine, triethylamine, di-n-propylamine, tri-n-propylamine, di-n-pentylamine, tri-n-pentylamine, diethanolamine, triethanolamine, and the like.
  • examples include ethanolamine, dicyclohexylamine, and dicyclohexylmethylamine.
  • aromatic amine examples include aniline, benzylamine, N, N-dimethylaniline, diphenylamine and the like.
  • heterocyclic amine examples include pyridine, 2-methylpyridine, 4-methylpyridine, 2-ethylpyridine, 4-ethylpyridine, 2-phenylpyridine, 4-phenylpyridine, N-methyl-4-phenylpyridine, 4-dimethylaminopyridine, imidazole, benzimidazole, 4-methylimidazole, 2-phenylbenzimidazole, 2,4,5-triphenylimidazole, nicotine, nicotinic acid, nicotinamide, quinoline, 8-oxyquinoline, pyrazine, Pyrazole, pyridazine, purine, pyrrolidine, piperidine, piperazine, morpholine, 4-methylmorpholine, N-cyclohexyl-N ′-[2- (4-morpholinyl) ethyl] thiourea, 1,5-diazabicyclo [4.3.0 ] -5-Nonene, 1,8-di And azabicyclo
  • Examples of the quaternary ammonium hydroxide include tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, benzyltrimethylammonium hydroxide, tetra-n-butylammonium hydroxide, and tetra-n-hexylammonium hydroxide. And so on.
  • Examples of the quaternary ammonium salt of carboxylic acid include tetramethylammonium acetate, tetramethylammonium benzoate, tetra-n-butylammonium acetate, tetra-n-butylammonium benzoate and the like.
  • the content of the basic compound is 0.001 to 3 parts by mass with respect to 100 parts by mass of the total solid components in the photosensitive resin composition. Is more preferable, and 0.005 to 1 part by mass is more preferable.
  • a basic compound may be used individually by 1 type, or may use 2 or more types together. When using 2 or more types, it is preferable that the total amount becomes the said range.
  • the photosensitive resin composition of the present invention may contain a surfactant.
  • a surfactant any of anionic, cationic, nonionic, or amphoteric can be used, but a preferred surfactant is a nonionic surfactant.
  • a surfactant for example, those described in paragraph numbers 0201 to 0205 of JP2012-88459A, and those described in paragraph numbers 0185 to 0188 of JP2011-215580A can be used. Is incorporated herein by reference.
  • nonionic surfactants include polyoxyethylene higher alkyl ethers, polyoxyethylene higher alkyl phenyl ethers, higher fatty acid diesters of polyoxyethylene glycol, silicone-based and fluorine-based surfactants.
  • KP-341, X-22-822 manufactured by Shin-Etsu Chemical Co., Ltd.
  • Polyflow No. 99C manufactured by Kyoeisha Chemical Co., Ltd.
  • F-top manufactured by Mitsubishi Materials Kasei Co., Ltd.
  • MegaFac manufactured by DIC Corporation
  • F-554 manufactured by DIC Corporation
  • Florard Novec FC-4430 Surfactured by Florard Novec FC-4430 (Sumitomo) 3M Co., Ltd.)
  • Surflon S-242 manufactured by AGC Seimi Chemical Co., Ltd.
  • PolyFox PF-6320 manufactured by OMNOVA
  • SH-8400 Toray Dow Corning Silicone
  • Footgent FTX-218G manufactured by Neos
  • the surfactant is measured by gel permeation chromatography using the structural unit A and the structural unit B represented by the following general formula (I-1-1) and using tetrahydrofuran (THF) as a solvent.
  • a preferred example is a copolymer having a polystyrene-equivalent weight average molecular weight (Mw) of 1,000 to 10,000.
  • the weight average molecular weight (Mw) is more preferably 1,500 to 5,000.
  • R 401 and R 403 each independently represent a hydrogen atom or a methyl group
  • R 402 represents a linear alkylene group having 1 to 4 carbon atoms
  • R 404 represents a hydrogen atom.
  • it represents an alkyl group having 1 to 4 carbon atoms
  • L represents an alkylene group having 3 to 6 carbon atoms
  • p and q are mass percentages representing a polymerization ratio
  • p is 10 mass% to 80 mass%.
  • Q represents a numerical value of 20% to 90% by mass
  • r represents an integer of 1 to 18, and s represents an integer of 1 to 10.
  • L is preferably a branched alkylene group represented by the following general formula (I-1-2).
  • R 405 in the general formula (I-1-2) represents an alkyl group having 1 to 4 carbon atoms, and is preferably an alkyl group having 1 to 3 carbon atoms in terms of compatibility and wettability to the coated surface. And an alkyl group having 2 or 3 carbon atoms is more preferred.
  • the sum of p and q is preferably 100.
  • Surfactant can be used individually by 1 type or in mixture of 2 or more types.
  • the content of the surfactant is preferably 10 parts by mass or less with respect to 100 parts by mass of the total solid components of the photosensitive resin composition. 0.001 to 10 parts by mass is more preferable, and 0.01 to 3 parts by mass is even more preferable.
  • the photosensitive resin composition of the present invention may contain an antioxidant.
  • an antioxidant a well-known antioxidant can be contained. By adding an antioxidant, coloring of the cured film can be prevented. Furthermore, there is an advantage that a reduction in film thickness due to decomposition can be reduced and heat-resistant transparency is excellent.
  • antioxidants include phosphorus antioxidants, amides, hydrazides, hindered amine antioxidants, sulfur antioxidants, phenol antioxidants, ascorbic acids, zinc sulfate, sugars, nitrites, sulfites. Examples thereof include salts, thiosulfates, and hydroxylamine derivatives.
  • phenolic antioxidants hindered amine antioxidants, phosphorus antioxidants, amide antioxidants, hydrazide antioxidants, sulfur antioxidants from the viewpoint of coloring the cured film and reducing film thickness Agents are preferred, and phenolic antioxidants are most preferred. These may be used individually by 1 type and may mix 2 or more types. Specific examples include the compounds described in paragraph numbers 0026 to 0031 of JP-A-2005-29515, and the compounds described in paragraph numbers 0106 to 0116 of JP-A-2011-227106. It is incorporated herein.
  • ADK STAB AO-20 ADK STAB AO-60, ADK STAB AO-80, ADK STAB LA-52, ADK STAB LA-81, ADK STAB AO-412S, ADK STAB PEP-36, IRGANOX 1035, IRGANOX 1098, and Tinuvin 144. Can be mentioned.
  • the content of the antioxidant is 0.1 to 10 parts by mass with respect to 100 parts by mass of the total solid components of the photosensitive resin composition.
  • the amount is preferably 0.2 to 5 parts by mass, and particularly preferably 0.5 to 4 parts by mass.
  • an acid proliferating agent can be used for the purpose of improving sensitivity.
  • the acid proliferating agent is a compound that can further generate an acid by an acid-catalyzed reaction to increase the acid concentration in the reaction system, and is a compound that exists stably in the absence of an acid.
  • Specific examples of the acid proliferating agent include the acid proliferating agents described in paragraph numbers 0226 to 0228 of JP2011-221494A, the contents of which are incorporated herein.
  • the photosensitive resin composition of the present invention contains an acid proliferation agent, the content of the acid proliferation agent is 10 to 1000 parts by mass with respect to 100 parts by mass of the photoacid generator.
  • the acid proliferating agent may be used alone or in combination of two or more. When two or more types of acid proliferating agents are used, the total amount is preferably within the above range.
  • the photosensitive resin composition of the present invention can contain a development accelerator.
  • a development accelerator those described in paragraphs 0171 to 0172 of JP2012-042837A can be referred to, and the contents thereof are incorporated in the present specification.
  • a development accelerator may be used individually by 1 type, and can also use 2 or more types together.
  • the addition amount of the development accelerator is 0 to 100 parts by mass with respect to 100 parts by mass of the total solid content of the photosensitive resin composition from the viewpoint of sensitivity and residual film ratio. 30 parts by mass is preferable, 0.1 to 20 parts by mass is more preferable, and 0.5 to 10 parts by mass is most preferable.
  • known additives such as a thermal radical generator, a thermal acid generator, an ultraviolet absorber, a thickener, and an organic or inorganic suspending agent are independently added as necessary. 1 type, or 2 or more types can be added.
  • these compounds for example, the compounds described in JP-A-2012-88459, paragraph numbers 0201 to 0224 can be used, and the contents thereof are incorporated in the present specification.
  • a thermal radical generator described in paragraphs 0120 to 0121 of JP2012-8223A, a nitrogen-containing compound and a thermal acid generator described in WO2011-133604A1 can be used, and the contents thereof are described in this specification. Incorporated into.
  • the photosensitive resin composition of the present invention can be prepared by mixing each component at a predetermined ratio and by any method, stirring and dissolving.
  • the photosensitive resin composition of the present invention can also be prepared by mixing each component with a predetermined ratio after preparing each solution in advance in a solvent.
  • the composition solution prepared as described above can be used after being filtered using, for example, a filter having a pore diameter of 0.2 ⁇ m.
  • the method for producing a cured film of the present invention preferably includes the following steps (1) to (5).
  • substrate application
  • the photosensitive resin composition of the present invention is applied on a substrate to form a wet film containing a solvent.
  • the substrate before the photosensitive resin composition is applied to the substrate, the substrate may be subjected to cleaning such as alkali cleaning or plasma cleaning. Further, the substrate surface may be treated with hexamethyldisilazane or the like with respect to the cleaned substrate.
  • the method of treating the substrate surface with hexamethyldisilazane is not particularly limited, and examples thereof include a method of exposing the substrate to hexamethyldisilazane vapor.
  • the substrate include inorganic substrates, resins, and resin composite materials.
  • the inorganic substrate include glass, quartz, silicone, silicon nitride, and a composite substrate in which molybdenum, titanium, aluminum, copper, or the like is vapor-deposited on such a substrate.
  • the resins include polybutylene terephthalate, polyethylene terephthalate, polyethylene naphthalate, polybutylene naphthalate, polystyrene, polycarbonate, polysulfone, polyethersulfone, polyarylate, allyl diglycol carbonate, polyamide, polyimide, polyamideimide, polyetherimide, poly Fluorine resins such as benzazole, polyphenylene sulfide, polycycloolefin, norbornene resin, polychlorotrifluoroethylene, liquid crystal polymer, acrylic resin, epoxy resin, silicone resin, ionomer resin, cyanate resin, crosslinked fumaric acid diester, cyclic polyolefin, aromatic Made of synthetic resin such as aromatic ether, maleimide-olefin, cellulose, episulfide compound And the like.
  • the method for applying the photosensitive resin composition to the substrate is not particularly limited.
  • a slit coating method, a spray method, a roll coating method, a spin coating method, a casting coating method, a slit and spin method, or the like may be used. it can.
  • the relative movement speed between the substrate and the slit die is preferably 50 to 120 mm / sec.
  • the wet film thickness when the photosensitive resin composition is applied is not particularly limited, and can be applied with a film thickness according to the application. For example, 0.5 to 10 ⁇ m is preferable.
  • pre-wet method as described in JP-A-2009-145395.
  • the solvent is removed from the wet film formed by applying the photosensitive resin composition by vacuum (vacuum) and / or heating to form a dry film on the substrate.
  • the heating conditions for the solvent removal step are preferably 70 to 130 ° C. and about 30 to 300 seconds. When the temperature and time are in the above ranges, the pattern adhesiveness is better and the residue tends to be further reduced.
  • the substrate provided with the dry film is irradiated with actinic rays having a predetermined pattern.
  • a carboxyl group or a phenolic hydroxyl group is generated in the exposed area, and the solubility in the developer in the exposed area is improved. That is, in an embodiment including a polymer component having a structural unit having a group in which an acid group is protected by an acid-decomposable group, and a photoacid generator, the photoacid generator is decomposed by irradiation with actinic rays. Acid is generated.
  • the acid-decomposable group contained in a coating-film component is hydrolyzed by the catalytic action of the generated acid, and a carboxyl group or a phenolic hydroxyl group is generated.
  • a carboxyl group is produced
  • a light source of actinic light a low-pressure mercury lamp, a high-pressure mercury lamp, an ultra-high pressure mercury lamp, a chemical lamp, a light emitting diode (LED) light source, an excimer laser generator, etc.
  • i-line 365 nm
  • h-line 405 nm
  • irradiation light can also be adjusted through spectral filters, such as a long wavelength cut filter, a short wavelength cut filter, and a band pass filter, as needed.
  • the exposure amount is preferably 1 to 500 mJ / cm 2 .
  • various types of exposure machines such as a mirror projection aligner, a stepper, a scanner, a proximity, a contact, a microlens array, a lens scanner, and a laser exposure can be used.
  • the super-resolution technique includes multiple exposure in which exposure is performed a plurality of times, a method using a phase shift mask, and an annular illumination method. By using these super-resolution techniques, it is possible to form a higher definition pattern, which is preferable.
  • the copolymer having a liberated carboxyl group or phenolic hydroxyl group is developed using a developer.
  • a positive image is formed by removing an exposed area having a carboxyl group and / or a phenolic hydroxyl group that is easily dissolved in the developer.
  • the developer used in the development step preferably contains an aqueous solution of a basic compound.
  • Examples of basic compounds include alkali metal hydroxides such as lithium hydroxide, sodium hydroxide, and potassium hydroxide; alkali metal carbonates such as sodium carbonate, potassium carbonate, and cesium carbonate; sodium bicarbonate, potassium bicarbonate Alkali metal bicarbonates such as: tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, diethyldimethylammonium hydroxide, and other tetraalkylammonium hydroxides: Alkyl) trialkylammonium hydroxides; silicates such as sodium silicate and sodium metasilicate; ethylamine, propylamine, diethylamine, triethylammonium Alkylamines such as diamine; Alcoholamines such as dimethylethanolamine and triethanolamine; 1,8-diazabicyclo- [5.4.0] -7-unde
  • sodium hydroxide, potassium hydroxide, tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, and choline (2-hydroxyethyltrimethylammonium hydroxide) are preferable.
  • An aqueous solution obtained by adding an appropriate amount of a water-soluble organic solvent such as methanol or ethanol or a surfactant to the alkaline aqueous solution can also be used as a developer.
  • the pH of the developer is preferably 10.0 to 14.0.
  • the development time is preferably 30 to 500 seconds, and the development method may be any of a liquid piling method (paddle method), a shower method, a dipping method, and the like.
  • a rinsing step can also be performed after development. In the rinsing step, the developed substrate and the development residue are removed by washing the developed substrate with pure water or the like.
  • a known method can be used as the rinsing method. For example, shower rinse and dip rinse can be mentioned.
  • the acid-decomposable group is thermally decomposed to generate a carboxyl group or a phenolic hydroxyl group, and crosslinked with a crosslinkable group, a crosslinking agent, etc.
  • a cured film can be formed.
  • This heating is performed using a heating device such as a hot plate or an oven at a predetermined temperature, for example, 180 to 250 ° C. for a predetermined time, for example, 5 to 90 minutes on the hot plate, 30 to 120 minutes for the oven. It is preferable to By proceeding the crosslinking reaction in this way, a protective film and an interlayer insulating film that are superior in heat resistance, hardness, and the like can be formed.
  • post-baking can be performed after baking at a relatively low temperature (addition of a middle baking process).
  • middle baking it is preferable to post-bake at a high temperature of 200 ° C. or higher after heating at 90 to 150 ° C. for 1 to 60 minutes.
  • middle baking and post-baking can be heated in three or more stages. The taper angle of the pattern can be adjusted by devising such middle baking and post baking.
  • These heating methods can use well-known heating methods, such as a hotplate, oven, and an infrared heater.
  • the entire surface of the patterned substrate was re-exposed with actinic rays (post-exposure) and then post-baked to generate acid from the photoacid generator present in the unexposed areas and promote crosslinking. It can function as a catalyst that promotes the film curing reaction.
  • the preferred exposure amount in the case of including a post-exposure step preferably 100 ⁇ 3,000mJ / cm 2, particularly preferably 100 ⁇ 500mJ / cm 2.
  • the cured film obtained from the photosensitive resin composition of the present invention can also be used as a dry etching resist.
  • dry etching processes such as ashing, plasma etching, and ozone etching can be performed as the etching process.
  • the cured film of the present invention is a cured film obtained by curing the above-described photosensitive resin composition of the present invention. Moreover, it is preferable that the cured film of this invention is a cured film obtained by the formation method of the cured film of this invention mentioned above.
  • the cured film of the present invention can be suitably used as an interlayer insulating film.
  • the photosensitive resin composition of the present invention can provide an interlayer insulating film having high transparency even when baked at a high temperature.
  • the interlayer insulation film formed using the photosensitive resin composition of the present invention has high transparency and is useful for applications such as a liquid crystal display device, an organic electroluminescence display device, and a touch panel.
  • the liquid crystal display device of the present invention has the cured film of the present invention.
  • the liquid crystal display device of the present invention is not particularly limited except that it has a planarizing film and an interlayer insulating film formed using the photosensitive resin composition of the present invention, and known liquid crystal display devices having various structures. Can be mentioned.
  • specific examples of TFTs included in the liquid crystal display device of the present invention include amorphous silicon-TFT, low-temperature polysilicon-TFT, oxide semiconductor TFT, and the like. Since the cured film of the present invention is excellent in electrical characteristics, it can be preferably used in combination with these TFTs.
  • the liquid crystal driving methods that can be taken by the liquid crystal display device of the present invention include TN (Twisted Nematic) method, VA (Virtual Alignment) method, IPS (In-Place-Switching) method, FFS (Frings Field Switching) method, OCB (Optical). Compensated Bend) method and the like.
  • the cured film of the present invention can also be used in a COA (Color Filter on Array) type liquid crystal display device.
  • the alignment method of the liquid crystal alignment film that the liquid crystal display device of the present invention can take include a rubbing alignment method and a photo alignment method.
  • the polymer orientation may be supported by a PSA (Polymer Sustained Alignment) technique described in JP-A Nos. 2003-149647 and 2011-257734.
  • the photosensitive resin composition of this invention and the cured film of this invention are not limited to the said use, It can be used for various uses.
  • a protective film for the color filter in addition to the planarization film and interlayer insulating film, a protective film for the color filter, a spacer for keeping the thickness of the liquid crystal layer in the liquid crystal display device constant, a microlens provided on the color filter in the solid-state imaging device, etc.
  • FIG. 1 is a conceptual cross-sectional view showing an example of an active matrix liquid crystal display device 10.
  • the liquid crystal display device 10 is a liquid crystal panel having a backlight unit 12 on the back surface, and the liquid crystal panel is disposed on all pixels disposed between two glass substrates 14 and 15 having a polarizing film attached thereto.
  • Corresponding TFT 16 elements are arranged.
  • Each element formed on the glass substrate is wired with an ITO (Indium Tin Oxide) transparent electrode 19 that forms a pixel electrode through a contact hole 18 formed in the cured film 17.
  • ITO Indium Tin Oxide
  • a color filter 22 in which a layer of liquid crystal 20 and a black matrix are arranged is provided.
  • the light source of the backlight is not particularly limited, and a known light source can be used.
  • white LED, multicolor LED such as blue, red and green, fluorescent lamp (cold cathode tube), organic electroluminescence (organic EL) and the like can be mentioned.
  • the liquid crystal display device can be a 3D (stereoscopic) type or a touch panel type.
  • a flexible type can also be used.
  • the second interlayer insulating film (48) described in JP2011-145686A, the interlayer insulating film (520) described in JP2009-258758A, JP It can be used as an organic insulating film (PAS) described in FIG. 1 of 2007-328210.
  • the present invention can be applied as an insulating film of a polymer network type liquid crystal as described in JP-A-2001-125086.
  • reference numeral SUB1 denotes a glass substrate, which has a plurality of scanning signal lines and a plurality of video signal lines intersecting with the plurality of scanning signal lines.
  • a TFT is provided in the vicinity of each intersection.
  • a base film UC On the glass substrate SUB1, a base film UC, a semiconductor film PS such as silicon, a gate insulating film GI, a TFT gate electrode GT, and a first interlayer insulating film IN1 are formed in this order from the bottom.
  • a drain electrode SD1 of the TFT and a source electrode SD2 of the TFT are formed on the first interlayer insulating film IN1.
  • the drain electrode SD1 is connected to the drain region of the TFT through a contact hole formed in the gate insulating film GI and the first interlayer insulating film IN1.
  • the source electrode SD2 is connected to the source region of the TFT through a contact hole formed in the gate insulating film GI and the first interlayer insulating film IN1.
  • a second interlayer insulating film IN2 is formed on the drain electrode SD1 and the source electrode SD2.
  • An organic insulating film PAS is formed on the second interlayer insulating film IN2.
  • the organic insulating film PAS can be formed using the photosensitive resin composition of the present invention.
  • a counter electrode CT and a reflective film RAL are formed on the organic insulating film PAS.
  • a third interlayer insulating film IN3 is formed on the counter electrode CT and the reflective film RAL.
  • a pixel electrode PX is formed on the third interlayer insulating film IN3.
  • the pixel electrode PX is connected to the source electrode SD2 of the TFT through a contact hole formed in the second interlayer insulating film IN2 and the third interlayer insulating film IN3.
  • the organic insulating film PAS is formed using the photosensitive resin composition of the present invention, since the heat resistance of the organic insulating film PAS is excellent, the film forming temperature of the third interlayer insulating film IN3 is increased. And a denser film can be formed.
  • first interlayer insulating film IN1, the second interlayer insulating film IN2, and the third interlayer insulating film IN3 can also be formed using the photosensitive resin composition of the present invention.
  • the details of the liquid crystal display device shown in FIG. 2 can be referred to the description in Japanese Patent Application Laid-Open No. 2007-328210, and the contents thereof are incorporated in this specification.
  • the organic electroluminescence (organic EL) display device of the present invention has the cured film of the present invention.
  • the organic EL display device of the present invention is not particularly limited except that it has a flattening film and an interlayer insulating film formed using the photosensitive resin composition of the present invention, and various known organic materials having various structures.
  • An EL display device and a liquid crystal display device can be given.
  • specific examples of TFTs included in the organic EL display device of the present invention include amorphous silicon-TFT, low-temperature polysilicon-TFT, oxide semiconductor TFT, and the like. Since the cured film of the present invention is excellent in electrical characteristics, it can be preferably used in combination with these TFTs.
  • FIG. 3 is a conceptual diagram of a configuration of an example of an organic EL display device.
  • a schematic cross-sectional view of a substrate in a bottom emission type organic EL display device is shown, and a planarizing film 4 is provided.
  • a bottom gate type TFT 1 is formed on a glass substrate 6, and an insulating film 3 made of Si 3 N 4 is formed so as to cover the TFT 1.
  • a contact hole (not shown) is formed in the insulating film 3, and then a wiring 2 (height: 1.0 ⁇ m) connected to the TFT 1 through the contact hole is formed on the insulating film 3.
  • the wiring 2 is for connecting the TFT 1 with an organic EL element formed between the TFTs 1 or in a later process.
  • the flattening film 4 is formed on the insulating film 3 with the unevenness due to the wiring 2 being embedded.
  • a bottom emission type organic EL element is formed on the planarizing film 4. That is, the first electrode 5 made of ITO is formed on the planarizing film 4 so as to be connected to the wiring 2 through the contact hole 7.
  • the first electrode 5 corresponds to the anode of the organic EL element.
  • An insulating film 8 having a shape covering the periphery of the first electrode 5 is formed. By providing the insulating film 8, a short circuit between the first electrode 5 and the second electrode formed in the subsequent process is prevented. be able to. Further, although not shown in FIG.
  • a hole transport layer, an organic light emitting layer, and an electron transport layer are sequentially deposited through a desired pattern mask, and then a second layer made of Al is formed on the entire surface above the substrate.
  • An active matrix organic material in which two electrodes are formed and sealed by bonding using a sealing glass plate and an ultraviolet curable epoxy resin, and each organic EL element is connected to a TFT 1 for driving it.
  • An EL display device is obtained.
  • the photosensitive resin composition of the present invention Since the photosensitive resin composition of the present invention has good sensitivity and excellent pattern adhesion during development, it is formed using the photosensitive resin composition of the present invention as a structural member of a MEMS (Micro Electro Mechanical Systems) device.
  • the resist pattern thus formed is used as a partition wall or incorporated as a part of a mechanical drive component.
  • MEMS devices include parts such as SAW (Surface Acoustic Wave) filters, BAW (Bulk Acoustic Wave) filters, gyro sensors, micro shutters for displays, image sensors, electronic paper, inkjet heads, biochips, and sealants. It is done. More specific examples are exemplified in JP-T-2007-522531, JP-A-2008-250200, JP-A-2009-263544, and the like.
  • the photosensitive resin composition of the present invention is excellent in flatness and transparency, for example, the bank layer (16) and the planarization film (57) described in FIG. 2 of JP-A-2011-107476, JP-A-2010-
  • spacers for maintaining the thickness of the liquid crystal layer in liquid crystal display devices imaging optical systems for on-chip color filters such as facsimiles, electronic copying machines, solid-state image sensors, and micro lenses for optical fiber connectors are also used. It can be used suitably.
  • the touch panel of the present invention is a touch panel in which all or part of the insulating layer and / or protective layer is made of a cured product of the photosensitive resin composition of the present invention. Moreover, it is preferable that the touch panel of this invention has a transparent substrate, an electrode, an insulating layer, and / or a protective layer at least.
  • the touch panel display device of the present invention is preferably a touch panel display device having the touch panel of the present invention.
  • any of known methods such as a resistive film method, a capacitance method, an ultrasonic method, and an electromagnetic induction method may be used. Among these, the electrostatic capacity method is preferable.
  • Examples of the capacitive touch panel include those disclosed in JP 2010-28115 A and those disclosed in International Publication No. 2012/057165.
  • a touch panel display device As a touch panel display device, a so-called in-cell type (for example, FIG. 5, FIG. 6, FIG. 7 and FIG. 8 in Japanese Patent Publication No. 2012-517051), a so-called on-cell type (for example, Japanese Patent Application Laid-Open No. 2012-43394). 14, International Publication No. 2012/141148, FIG. 2 (b)), OGS type, TOL type, and other configurations (for example, FIG. 6 of Japanese Patent Application Laid-Open No. 2013-164871).
  • the touch panel has at least the following elements (1) to (5) on the front plate and the non-contact side of the front plate, and the insulating layer (4) is a cured film using the photosensitive resin composition of the present invention. It is preferable that (1) Frame layer (2) A plurality of first transparent electrode patterns formed by extending a plurality of pad portions in a first direction via connection portions (3) First transparent electrode pattern and electrical And a plurality of second transparent electrode patterns comprising a plurality of pad portions formed extending in a direction crossing the first direction. (4) First transparent electrode pattern and second transparent electrode pattern (5) The first transparent electrode pattern and the second transparent electrode pattern are electrically connected to at least one of the first transparent electrode pattern and the second transparent electrode pattern. Another conductive element In the capacitive input device of the present invention, it is preferable that a transparent protective layer is further provided so as to cover all or a part of the elements (1) to (5). The cured film of the present invention is more preferable. There.
  • FIG. 4 is a cross-sectional view illustrating a configuration example of a capacitive touch panel.
  • the capacitive touch panel 30 includes a front plate 31, a frame layer 32, a first transparent electrode pattern 33, a second transparent electrode pattern 34, an insulating layer 35, and a conductive element 36. And a transparent protective layer 37.
  • the front plate 31 is made of a transparent substrate such as a glass substrate, and tempered glass represented by gorilla glass manufactured by Corning Inc. can be used.
  • a transparent substrate such as a glass substrate, and tempered glass represented by gorilla glass manufactured by Corning Inc.
  • a transparent substrate a glass substrate, a quartz substrate, a transparent resin substrate, etc. are mentioned preferably.
  • the side in which each element of the front plate 31 is provided is called a non-contact surface.
  • input is performed by bringing a finger or the like into contact with the contact surface of the front plate 31 (the surface opposite to the non-contact surface).
  • the front plate may be referred to as a “base material”.
  • a frame layer 32 is provided on the non-contact surface of the front plate 31.
  • the frame layer 32 is a frame-like pattern around the display area formed on the non-contact side of the front panel of the touch panel, and is formed so as not to show the lead wiring and the like.
  • the capacitive touch panel may be provided with a frame layer 32 so as to cover a part of the front plate 31 (a region other than the input surface in FIG. 5).
  • the front plate 31 can be provided with an opening 38 in part as shown in FIG. A mechanical switch by pressing can be installed in the opening 38.
  • a plurality of first transparent electrode patterns 33 formed with a plurality of pad portions extending in the first direction via the connection portions,
  • a plurality of second transparent electrode patterns 34 each including a plurality of pad portions that are electrically insulated from one transparent electrode pattern 33 and extend in a direction crossing the first direction;
  • An insulating layer 35 that electrically insulates the electrode pattern 33 and the second transparent electrode pattern 34 is formed.
  • the 1st transparent electrode pattern 33, the 2nd transparent electrode pattern 34, and the electroconductive element 36 mentioned later can be produced with a metal film, for example.
  • the film thickness of each element can be 10 to 200 nm.
  • the amorphous ITO film can be crystallized into a polycrystalline ITO film by firing, and the electrical resistance can be reduced.
  • the 1st transparent electrode pattern 33, the 2nd transparent electrode pattern 34, and the electroconductive element 36 mentioned later are manufactured using the photosensitive transfer material which has the photosensitive resin composition using a conductive fiber. You can also In addition, when the first conductive pattern or the like is formed of ITO or the like, paragraphs 0014 to 0016 of Japanese Patent No. 4506785 can be referred to, and the contents thereof are incorporated in this specification.
  • At least one of the first transparent electrode pattern 33 and the second transparent electrode pattern 34 extends over both the non-contact surface of the front plate 31 and the region of the frame layer 32 opposite to the front plate 31. Can be installed.
  • FIG. 4 a diagram is shown in which the second transparent electrode pattern is installed across both areas of the non-contact surface of the front plate 31 and the surface opposite to the front plate 31 of the frame layer 32. Yes.
  • FIG. 6 is an explanatory diagram showing an example of the first transparent electrode pattern and the second transparent electrode pattern.
  • the first transparent electrode pattern 33 is formed such that the pad portion 33a extends in the first direction via the connection portion 33b.
  • the second transparent electrode pattern 34 is electrically insulated by the first transparent electrode pattern 33 and the insulating layer 35, and extends in a direction intersecting the first direction (second direction in FIG. 6). It is constituted by a plurality of pad portions that are formed.
  • the pad portion 33a and the connection portion 33b may be manufactured integrally, or only the connection portion 33b is manufactured, and the pad portion 33a and the second transparent electrode pattern 33 are formed.
  • the electrode pattern 34 may be integrally formed (patterned).
  • the pad portion 33a and the second transparent electrode pattern 34 are integrally formed (patterned), as shown in FIG. 6, a part of the connection part 33b and a part of the pad part 33a are connected and an insulating layer is formed. Each layer is formed so that the first transparent electrode pattern 33 and the second transparent electrode pattern 34 are electrically insulated by 35.
  • a conductive element 36 is installed on the surface side of the frame layer 32 opposite to the front plate 31.
  • the conductive element 36 is electrically connected to at least one of the first transparent electrode pattern 33 and the second transparent electrode pattern 34, and is different from the first transparent electrode pattern 33 and the second transparent electrode pattern 34. Is another element.
  • FIG. 4 a view in which the conductive element 36 is connected to the second transparent electrode pattern 34 is shown.
  • the transparent protective layer 37 is installed so that all of each component may be covered.
  • the transparent protective layer 37 may be configured to cover only a part of each component.
  • the insulating layer 35 and the transparent protective layer 37 may be made of the same material or different materials.
  • the touch panel display device including the capacitive touch panel and the capacitive touch panel as a constituent element is “Latest Touch Panel Technology” (Techno Times, issued July 6, 2009), supervised by Yuji Mitani, “Touch Panel The configurations disclosed in “Technology and Development” CMC Publishing (2004, 12), “FPD International 2009 Forum T-11 Lecture Textbook”, “Cypress Semiconductor Corporation Application Note AN2292” and the like can be applied.
  • the touch panel of the present invention can be manufactured, for example, as follows. That is, the photosensitive resin composition of the present invention is applied by various methods such as an inkjet coating method so as to be in contact with the ITO electrode, and an opening pattern having a predetermined shape is formed on the photosensitive resin composition applied to the ITO electrode. It can be manufactured through Step 2 in which a mask is placed and exposed by irradiation with active energy rays, Step 3 in which the exposed photosensitive resin composition is developed, and Step 4 in which the photosensitive resin composition after development is heated. .
  • Step 1 when the photosensitive resin composition is applied so as to be in contact with the ITO electrode, it is sufficient that at least a part of the applied photosensitive resin composition of the present invention is in contact with the ITO electrode.
  • Step 2 can be performed in the same manner as the exposure step described above, and the preferred embodiment is also the same.
  • Step 3 can be performed in the same manner as the development step described above, and the preferred embodiment is also the same.
  • Step 4 can be performed in the same manner as the post-baking step described above, and the preferred embodiment is also the same.
  • the ITO electrode pattern in the touch panel of this invention the pattern shown in FIG. 6 mentioned above is mentioned preferably.
  • the resulting solution was poured into 1 L of deionized water with vigorous stirring, the precipitated white powder was collected by filtration and washed with deionized water and a water / methanol (50/50 mass ratio) mixture.
  • the polymer was dried under vacuum at 50 ° C. for 2 days to obtain Resin A-1.
  • the weight average molecular weight of the obtained resin A-1 was 16000 (polystyrene conversion value of gel permeation chromatography).
  • the hydroxyl group protection rate of the obtained resin A-1 was 30% with respect to the total hydroxyl amount (molar amount) of the resin A-1a ( 1 H-NMR).
  • Resin A-1 was synthesized by the same method except that the dicarboxylic acid dichloride used in the synthesis method was changed to the dicarboxylic acid dichloride shown in the following table. Resin A-5 was not protected by dihydrofuran.
  • Resin A-7 was synthesized by the same method except that tetracarboxylic dianhydride in the synthesis method was changed to tetracarboxylic dianhydride shown in the following table. Resin A-9 was not protected with dihydrofuran.
  • Each photosensitive resin composition is SK-N1300G (Dainippon Screen) on a glass substrate (1100 ⁇ 1300 mm size, 0.7 mm thickness, manufactured by Corning) that has been surface-treated with hexamethyldisilazane (HMDS) vapor for 1 minute. After slit coating, the pressure was reduced to 0.26 kPa (2.0 Torr) and pre-baked on a hot plate at 100 ° C. for 90 seconds to volatilize the solvent to form a photosensitive resin composition layer having a thickness of 3.0 ⁇ m. . Next, the obtained photosensitive resin composition layer was exposed to a 5.0 ⁇ m hole pattern using an MPAsp-H760 exposure machine manufactured by Canon Inc.
  • a glass substrate (OA-10 (manufactured by Nippon Electric Glass Co., Ltd.)) was exposed to HMDS vapor for 30 seconds, each photosensitive resin composition was slit-coated, and the solvent was volatilized by vacuum drying. Pre-baked on a second hot plate to form a photosensitive resin composition layer having a thickness of 2.0 ⁇ m. Then, it exposed so that an integrated irradiation amount might be set to 300 mJ / cm ⁇ 2 > (energy intensity: 20 mW / cm ⁇ 2 >) using the ultrahigh pressure mercury lamp, and this board
  • the transmittance of the cured film was measured at a wavelength of 400 nm using a spectrophotometer (U-3000: manufactured by Hitachi, Ltd.). The unit is expressed in%.
  • A, B and C are practical levels. A: 90% or more B: 85% or more and less than 90% C: 80% or more and less than 85% D: Less than 80%
  • a liquid crystal display device using a thin film transistor (TFT) was produced by the following method.
  • a cured film 17 was formed as an interlayer insulating film as follows to obtain a liquid crystal display device. That is, as a pretreatment for improving the wettability of the substrate and the interlayer insulating film 17 in paragraph 0058 of Japanese Patent No. 3321003, the substrate is exposed to hexamethyldisilazane vapor for 30 seconds, and then each photosensitive resin composition is spun. After coating application, the solvent was volatilized by prebaking on a hot plate at 120 ° C.
  • the obtained photosensitive resin composition layer was irradiated with an integrated irradiation amount of 300 mJ / cm 2 (illuminance 20 mW / cm 2 ) using an ultrahigh pressure mercury lamp from above the mask, and then developed with an alkaline aqueous solution. A pattern was formed, and heat treatment was performed at 300 ° C. for 60 minutes in a nitrogen atmosphere.
  • the applicability when applying the photosensitive resin composition of the example was good, and no wrinkles or cracks were observed in the cured film obtained after exposure, development, and baking.
  • the obtained liquid crystal display device was allowed to stand for 24 hours under forced conditions (temperature 85 ° C./relative humidity 80% RH, LH-113 constant temperature and humidity chamber manufactured by Espec), and the liquid crystal display device was taken out.
  • a drive voltage was applied to the liquid crystal display device and a gray test signal was input, the gray display was visually observed, and the presence or absence of display unevenness was evaluated according to the following evaluation criteria.
  • a to C are preferred on the following criteria, and A or B is more preferred.
  • B Slight unevenness is observed on the edge of the glass substrate, but there is no problem in the display (good)
  • C Slight unevenness on the display, but practical level (normal)
  • D Display is uneven (bad)
  • the photosensitive resin compositions of the examples had good sensitivity and curability and both satisfied practical levels. Furthermore, it was excellent in storage stability, permeability, and display unevenness. On the other hand, in the photosensitive resin composition of the comparative example, at least one of sensitivity and curability was less than a practical level.
  • C-1 structure shown below (PAG-103, manufactured by BASF Corp., photoacid that generates an acid having a pKa of 3 or less) Generator
  • C-2 Structure shown below (PAI-101, manufactured by Midori Chemical Co., a photoacid generator that generates an acid having a pKa of 3 or less), Me represents a methyl group.
  • C-3 Structure shown below (a photoacid generator that generates an acid having a pKa of 3 or less, and a synthesis example will be described later)
  • C-4 Structure shown below (a photoacid generator that generates an acid having a pKa of 3 or less, synthesis examples will be described later), and Ts represents a tosyl group.
  • C-5 Structure shown below (a photoacid generator that generates an acid having a pKa of 3 or less, a synthesis example will be described later)
  • C-6 Structure shown below (GSID-26-1, triarylsulfonium salt (manufactured by BASF), photoacid generator that generates an acid having a pKa of 3 or less)
  • C-7 TAS-200 (naphthoquinone diazide, manufactured by Toyo Gosei Co., Ltd.)
  • DBA 9,10-dibutoxyanthracene (manufactured by Kawasaki Kasei Co., Ltd., sensitizer)
  • D Solvent NMP: N-methyl-2-pyrrolidone
  • E compound (compound having a group in which at least a part of the acid group is protected with an acid-decomposable group)
  • E-1 The following compound, molecular weight 494 (protecting the phenolic hydroxyl group of 9,9-bis (4-hydroxy
  • Crude B-1-2A was purified by silica gel column chromatography to obtain 1.7 g of intermediate C-1-2A.
  • C-1-2A (1.7 g) and p-xylene (6 mL) were mixed, and 0.23 g of p-toluenesulfonic acid monohydrate (manufactured by Wako Pure Chemical Industries, Ltd.) was added at 140 ° C. Heated for 2 hours. After allowing to cool, water and ethyl acetate were added to the reaction mixture and the phases were separated. The organic phase was dried over magnesium sulfate, filtered and concentrated to give crude C-1-2B.
  • Tetrahydrofuran (THF) (2 mL) and the whole amount of crude C-1-2B were mixed, 2 mL hydrochloric acid / THF solution 6.0 mL under ice-cooling, then isopentyl nitrite (manufactured by Wako Pure Chemical Industries, Ltd.) (0.84 g) was added dropwise, and the mixture was warmed to room temperature and stirred for 2 hours. Water and ethyl acetate were added to the obtained reaction mixture for liquid separation, and the organic layer was washed with water, dried over magnesium sulfate, filtered and concentrated to obtain a crude intermediate C-1-2C.
  • the total amount of the intermediate crude C-1-2C was mixed with acetone (10 mL), and triethylamine (Wako Pure Chemical Industries, Ltd.) (1.2 g), p-toluenesulfonyl chloride (Tokyo Chemical Industry) After adding 1.4 g), the mixture was warmed to room temperature and stirred for 1 hour. Water and ethyl acetate were added to the obtained reaction mixture, and the phases were separated. The organic phase was dried over magnesium sulfate, filtered and concentrated to obtain crude C-4. Crude C-4 was reslurried with cold methanol, filtered and dried to obtain C-4 (1.2 g).
  • Example 100 An organic EL display device using a thin film transistor (TFT) was produced by the following method (see FIG. 3).
  • a bottom gate type TFT 1 was formed on a glass substrate 6, and an insulating film 3 made of Si 3 N 4 was formed so as to cover the TFT 1.
  • a contact hole (not shown) is formed in the insulating film 3, and then a wiring 2 (height 1.0 ⁇ m) connected to the TFT 1 through the contact hole is formed on the insulating film 3. .
  • the wiring 2 is used to connect the TFT 1 with an organic EL element formed between TFTs 1 or in a later process.
  • the planarizing film 4 was formed on the insulating film 3 in a state where the unevenness due to the wiring 2 was embedded.
  • the planarizing film 4 is formed on the insulating film 3 by spin-coating the photosensitive resin composition of Example 1 on a substrate, pre-baking (90 ° C./120 seconds) on a hot plate, and then applying high pressure from above the mask. After irradiating i-line (365 nm) with 45 mJ / cm 2 (energy intensity 20 mW / cm 2 ) using a mercury lamp, heat treatment was performed on a 90 ° C. hot plate at 90 ° C.
  • the whole surface is exposed so that the integrated irradiation amount is 300 mJ / cm 2 (energy intensity: 20 mW / cm 2 , i-line), Heat treatment at 300 ° C./60 minutes was performed.
  • the applicability when applying the photosensitive resin composition was good, and no wrinkles or cracks were observed in the cured film obtained after exposure, development and baking.
  • the average step of the wiring 2 was 500 nm, and the thickness of the prepared planarizing film 4 was 2,000 nm.
  • a bottom emission type organic EL element was formed on the obtained flattening film 4.
  • a first electrode 5 made of ITO was formed on the planarizing film 4 so as to be connected to the wiring 2 through the contact hole 7.
  • a resist was applied, pre-baked, exposed through a mask having a desired pattern, heat-treated, and developed.
  • pattern processing was performed by wet etching using an ITO etchant.
  • the resist pattern was stripped at 50 ° C. using a resist stripper (remover 100, manufactured by AZ Electronic Materials).
  • the first electrode 5 thus obtained corresponds to the anode of the organic EL element.
  • an insulating film 8 having a shape covering the periphery of the first electrode 5 was formed.
  • the photosensitive resin composition of Example 3 was used, and the insulating film 8 was formed by the same method as described above. By providing this insulating film 8, it is possible to prevent a short circuit between the first electrode 5 and the second electrode formed in the subsequent process.
  • a hole transport layer, an organic light emitting layer, and an electron transport layer were sequentially deposited through a desired pattern mask in a vacuum deposition apparatus.
  • a second electrode made of Al was formed on the entire surface above the substrate.
  • substrate was taken out from the vapor deposition machine, and it sealed by bonding together using the glass plate for sealing, and an ultraviolet curable epoxy resin.
  • Example 101 In the liquid crystal display device described in FIG. 1 of JP-A-2007-328210, the organic insulating film PAS was formed by the following method to obtain a liquid crystal display device. First, according to Japanese Patent Application Laid-Open No. 2007-328210, an array substrate formed until just before the organic insulating film PAS of the liquid crystal display device described in FIG. Next, this substrate was exposed to HMDS vapor for 30 seconds, and then the photosensitive resin composition of Example 1 was slit-coated and then pre-baked on a hot plate at 90 ° C. for 2 minutes to volatilize the solvent. A thick photosensitive resin composition layer was formed.
  • the obtained photosensitive resin composition layer was subjected to an optimum exposure dose mJ / cm 2 (energy intensity: 20 mW / cm 2) through a hole pattern mask having a diameter of 5 ⁇ m using MPA 7800CF manufactured by Canon Inc. , I-line) Exposed and heated on a hot plate at 80 ° C. for 90 seconds.
  • the exposed resin composition layer was developed with an alkali developer (0.6% tetramethylammonium hydroxide aqueous solution), and then rinsed with ultrapure water.
  • the entire surface was exposed using an ultra-high pressure mercury lamp so that the integrated irradiation amount was 300 mJ / cm 2 (energy intensity: 20 mW / cm 2 , measured with i-line), and then the substrate was heated at 300 ° C. in an oven at 60 ° C.
  • the organic insulating film PAS was obtained by heating for a few minutes.
  • a liquid crystal display device was obtained according to Japanese Patent Application Laid-Open No. 2007-328210.
  • the interlayer insulating film IN3 is formed at the same temperature as the interlayer insulating film IN2. Thereby, IN3 could be made into a dense film.
  • a driving voltage was applied to the obtained liquid crystal display device, it was found that the liquid crystal display device showed very good display characteristics and had high reliability.
  • a touch panel display device was produced by the method described below.
  • etching resist was applied onto ITO and dried to form an etching resist layer.
  • the distance between the exposure mask (quartz exposure mask having a transparent electrode pattern) surface and the etching resist layer is set to 100 ⁇ m, pattern exposure is performed at an exposure amount of 50 mJ / cm 2 (i-line), and development is performed with a developer.
  • a post-baking treatment at 130 ° C. for 30 minutes was performed to obtain a front plate on which a transparent electrode layer and a photosensitive resin layer pattern for etching were formed.
  • the front plate on which the transparent electrode layer and the photo-sensitive resin layer pattern for etching are formed is immersed in an etching tank containing ITO etchant (hydrochloric acid, potassium chloride aqueous solution, liquid temperature 30 ° C.), treated for 100 seconds, and etched resist.
  • ITO etchant hydroochloric acid, potassium chloride aqueous solution, liquid temperature 30 ° C.
  • the exposed transparent electrode layer not covered with the layer was dissolved and removed to obtain a front plate with a transparent electrode layer pattern with an etching resist layer pattern.
  • the transparent electrode layer-patterned front plate with the etching resist layer pattern is immersed in a dedicated resist stripping solution, the etching photosensitive resin layer is removed, and the frame layer and the first transparent electrode pattern A front plate formed was obtained.
  • the photosensitive resin composition of Example 1 was applied and dried (film thickness: 1 ⁇ m, 90 ° C., 120 seconds) to form a photosensitive resin composition layer.
  • the distance between the surface of the exposure mask (quartz exposure mask having a pattern for insulating layer) and the photosensitive resin composition layer was set to 30 ⁇ m, and pattern exposure was performed with the optimum exposure amount obtained by sensitivity evaluation.
  • After heat treatment at 90 ° C. for 2 minutes on a hot plate development was performed with a 2.38 mass% tetramethylammonium hydroxide aqueous solution at 23 ° C. for 15 seconds, and further with ultrapure water for 10 seconds. Rinse.
  • post baking was performed at 300 ° C. for 60 minutes to obtain a front plate on which a frame layer, a first transparent electrode pattern, and an insulating layer pattern were formed.
  • the front plate formed up to the insulating layer pattern was subjected to DC magnetron sputtering treatment (conditions: substrate temperature 50 ° C., argon pressure 0.13 Pa, oxygen pressure 0.01 Pa).
  • An ITO thin film having a thickness of 80 nm was formed to obtain a front plate on which a transparent electrode layer was formed.
  • the surface resistance of the ITO thin film was 110 ⁇ / ⁇ .
  • etching was performed and the etching resist layer was removed to form the frame layer, the first transparent electrode pattern, and the photosensitive resin composition of Example 1.
  • a front plate on which an insulating layer pattern and a second transparent electrode pattern were formed was obtained.
  • the photosensitive resin composition of Example 1 was applied and dried (film thickness: 1 ⁇ m) on the front plate formed up to the conductive element different from the first and second transparent electrode patterns. , 90 ° C. for 120 seconds) to obtain a photosensitive resin composition film. Further, exposure, heat treatment, development, post-exposure (1,000 mJ / cm 2 ), and post-bake treatment are performed to form the frame layer, the first transparent electrode pattern, and the photosensitive resin composition of Example 1. Insulating layer pattern, second transparent electrode pattern, insulating layer formed using the photosensitive resin composition of Example 1 so as to cover all the conductive elements different from the first and second transparent electrode patterns A front plate laminated with a (transparent protective layer) was obtained.
  • a liquid crystal display device manufactured by the method described in Japanese Patent Laid-Open No. 2009-47936 is bonded to the previously manufactured front plate, and a touch panel display device including a capacitive touch panel as a constituent element is manufactured by a known method. did.

Abstract

Provided are: a positive photosensitive resin composition which has excellent sensitivity and curability; a method for producing a cured film; a cured film; a liquid crystal display device; an organic electroluminescent display device; and a touch panel. This positive photosensitive resin composition contains: a resin which contains an acid group and/or an acid group protected by an acid-decomposable group, and which is cyclized and cured by means of a base; a thermal base generator represented by general formula (1); a photoacid generator; and a solvent. In formula (1), R1 represents a hydrogen atom or an n-valent organic group; each of R2-R5 independently represents a hydrogen atom or an alkyl group; and n represents an integer of 1 or more.

Description

ポジ型感光性樹脂組成物、硬化膜の製造方法、硬化膜、液晶表示装置、有機エレクトロルミネッセンス表示装置およびタッチパネルPositive photosensitive resin composition, method for producing cured film, cured film, liquid crystal display device, organic electroluminescence display device, and touch panel
 本発明は、ポジ型感光性樹脂組成物に関する。さらに詳しくは、液晶表示装置、有機エレクトロルミネッセンス表示装置、タッチパネル、集積回路素子、固体撮像素子などの電子部品の平坦化膜、保護膜および層間絶縁膜等の形成に好適な、ポジ型感光性樹脂組成物に関する。また、硬化膜の製造方法、ポジ型感光性樹脂組成物を硬化してなる硬化膜、硬化膜を用いた液晶表示装置、有機エレクトロルミネッセンス表示装置などの画像表示装置、およびタッチパネルなどの入力装置に関する。 The present invention relates to a positive photosensitive resin composition. More specifically, a positive photosensitive resin suitable for forming a planarizing film, a protective film, an interlayer insulating film, and the like of electronic components such as a liquid crystal display device, an organic electroluminescence display device, a touch panel, an integrated circuit element, and a solid-state imaging element Relates to the composition. The present invention also relates to a method for producing a cured film, a cured film obtained by curing a positive photosensitive resin composition, a liquid crystal display device using the cured film, an image display device such as an organic electroluminescence display device, and an input device such as a touch panel. .
 液晶表示装置、および有機エレクトロルミネッセンス表示装置などの画像表示装置、およびタッチパネルなどの入力装置には、多くの場合パターン形成された層間絶縁膜が設けられている。層間絶縁膜の形成には、必要とするパターン形状を得るための工程数が少なく、しかも十分な平坦性が得られるといったことから、感光性樹脂組成物が広く使用されている。 Image display devices such as liquid crystal display devices and organic electroluminescence display devices, and input devices such as touch panels are often provided with patterned interlayer insulating films. In forming an interlayer insulating film, a photosensitive resin composition is widely used because the number of steps for obtaining a required pattern shape is small and sufficient flatness is obtained.
 近年、製造の効率化や画像表示装置の高性能化のために、従来よりも高い温度(例えば300℃程度)での熱処理や製膜を行う試みがなされている。
 ポリイミド前駆体や、ポリベンゾオキサゾール前駆体などの環化して硬化する樹脂は、耐熱性に優れた硬化膜を形成できるため、ポリベンゾオキサゾール前駆体やポリイミド前駆体等を含む感光性樹脂組成物を用いて、各種微細パターンを形成する試みが行われている。
 特許文献1には、N-芳香族グリシン誘導体と、高分子前駆体とを含有するネガ型感光性樹脂組成物が開示されている。
 特許文献2には、アルカリ可溶性樹脂と、感光剤と、熱塩基発生剤とを含むポジ型感光性樹脂組成物が開示されている。熱塩基発生剤として、カルバメート系保護基を有し、窒素原子を含む複素環構造を有する2級アミンを用いている。
In recent years, attempts have been made to perform heat treatment and film formation at a higher temperature (for example, about 300 ° C.) than before in order to increase the efficiency of production and the performance of image display devices.
Resin that cures by cyclization such as polyimide precursor and polybenzoxazole precursor can form a cured film with excellent heat resistance. Attempts have been made to form various fine patterns.
Patent Document 1 discloses a negative photosensitive resin composition containing an N-aromatic glycine derivative and a polymer precursor.
Patent Document 2 discloses a positive photosensitive resin composition containing an alkali-soluble resin, a photosensitive agent, and a thermal base generator. As the thermal base generator, a secondary amine having a carbamate protecting group and a heterocyclic structure containing a nitrogen atom is used.
特開2006-282880号公報JP 2006-282880 A 特開2013-152381号公報JP 2013-152381 A
 特許文献1は、段落番号0014に記載されるように、ポリイミド前駆体樹脂の種類を問わず大きな溶解性コントラストを得られ、結果的に、十分なプロセスマージンを保ちつつ、形状が良好なパターンを得ることができる感光性樹脂組成物を提供することを目的とした発明で、かかる目的を達成するため、N-芳香族グリシン誘導体を光塩基発生剤として用いている。すなわち、特許文献1では、N-芳香族グリシン誘導体に光を照射して発生したアミンを触媒としてポリイミド前駆体樹脂のイミド化を行うことにより、露光部を硬化させて、露光部と未露光部の間に溶解性の差を付与してネガ型パターンを形成している。
 ポリイミド前駆体や、ポリベンゾオキサゾール前駆体などの、塩基により環化して硬化する樹脂は、耐熱性に優れた硬化膜を形成することができるが、これらの樹脂の環化反応には、高温での熱処理が必要とされていた。このため、このような樹脂を用いて硬化膜を形成する場合、樹脂の環化反応時の加熱により、電子部品などに熱的損傷などが生じる恐れがあり、環化温度のさらなる低減が求められており、硬化性のさらなる改善が望まれている。
 しかしながら、特許文献1では、環化温度を低下させることについての検討はなされておらず、実施例では、300℃で1時間加熱してイミド化を行っている。
 更には、特許文献1は、ネガ型感光性樹脂組成物に関する発明であって、ポジ型感光性樹脂組成物への適用についての記載も示唆もない。
Patent Document 1, as described in paragraph 0014, can obtain a large solubility contrast regardless of the type of polyimide precursor resin, and as a result, a pattern having a good shape while maintaining a sufficient process margin. The invention aims to provide a photosensitive resin composition that can be obtained. In order to achieve this object, an N-aromatic glycine derivative is used as a photobase generator. That is, in Patent Document 1, an exposed portion is cured by imidizing a polyimide precursor resin using an amine generated by irradiating light to an N-aromatic glycine derivative as a catalyst to cure an exposed portion and an unexposed portion. A negative pattern is formed with a difference in solubility between the two.
Resins that are cured by cyclization with a base, such as polyimide precursors and polybenzoxazole precursors, can form cured films with excellent heat resistance. Heat treatment was required. For this reason, when a cured film is formed using such a resin, there is a risk that heat during the cyclization reaction of the resin may cause thermal damage to electronic components, and further reduction of the cyclization temperature is required. Therefore, further improvement in curability is desired.
However, Patent Document 1 does not discuss the reduction of the cyclization temperature, and in the examples, imidization is performed by heating at 300 ° C. for 1 hour.
Furthermore, Patent Document 1 is an invention relating to a negative photosensitive resin composition, and there is no description or suggestion about application to a positive photosensitive resin composition.
 また、特許文献2は、ポジ型感光性樹脂組成物に関する発明であるが、本発明者が、特許文献2に開示されたポジ型感光性樹脂組成物について検討したところ、露光部で発生した酸により、熱塩基発生剤の脱保護反応が起こり易く、感度が低下しやすいことが分かった。 Patent Document 2 is an invention relating to a positive photosensitive resin composition, but the present inventor has examined the positive photosensitive resin composition disclosed in Patent Document 2 and found that an acid generated in an exposed area. Thus, it was found that the deprotection reaction of the thermal base generator is likely to occur and the sensitivity is likely to be lowered.
 よって、本発明は、感度および硬化性に優れたポジ型感光性樹脂組成物を提供することを目的とする。また、硬化膜の製造方法、硬化膜、液晶表示装置、有機エレクトロルミネッセンス表示装置およびタッチパネルを提供することを目的とする。 Therefore, an object of the present invention is to provide a positive photosensitive resin composition excellent in sensitivity and curability. Moreover, it aims at providing the manufacturing method of a cured film, a cured film, a liquid crystal display device, an organic electroluminescent display device, and a touch panel.
 発明者らが検討を行った結果、下記一般式(1)で表される熱塩基発生剤と、酸基および/または酸基が酸分解性基で保護された基を含有し、塩基によって環化して硬化する樹脂と、光酸発生剤とを併用することにより、感度および硬化性に優れたポジ型感光性樹脂組成物を提供できることを見出し、本発明を完成するに至った。本発明は、以下を提供する。
<1> 酸基および/または酸基が酸分解性基で保護された基を含有し、塩基によって環化して硬化する樹脂と、下記一般式(1)で表される熱塩基発生剤と、光酸発生剤と、溶剤と、を含む、ポジ型感光性樹脂組成物;
Figure JPOXMLDOC01-appb-C000005
 式中、Rは、水素原子またはn価の有機基を表し、
 R~Rは、それぞれ独立に、水素原子またはアルキル基を表し、
 nは、1以上の整数を表す。
<2> 樹脂が、一般式(2)で表される繰り返し単位を含むポリベンゾオキサゾール前駆体、および、一般式(3)で表される繰り返し単位を含むポリイミド前駆体から選ばれる少なくとも1種である、<1>に記載のポジ型感光性樹脂組成物;
Figure JPOXMLDOC01-appb-C000006
 式中、XおよびXは、それぞれ独立に、4価の有機基を表し、
 YおよびYは、それぞれ独立に、2価の有機基を表し、
 RおよびRは、それぞれ独立に、酸分解性基を表し、
 RおよびRは、それぞれ独立に、水素原子、架橋性基、アルキル基、酸分解性基、または、-CORcで表される基を表し、
 Rcは、アルキル基またはアリール基を表す。
<3> 樹脂が、一般式(4)で表される繰り返し単位を含むポリベンゾオキサゾール前駆体、および、一般式(5)で表される繰り返し単位を含むポリイミド前駆体から選ばれる少なくとも1種である、<1>に記載のポジ型感光性樹脂組成物;
Figure JPOXMLDOC01-appb-C000007
 式中、XおよびXは、それぞれ独立に、4価の有機基を表し、
 YおよびYは、それぞれ独立に、2価の有機基を表し、
 R10およびR12は、水素原子を表し、
 R11およびR13は、それぞれ独立に、水素原子、架橋性基、アルキル基、または、-CORcで表される基を表し、
 Rcは、アルキル基またはアリール基を表す。
<4> 更に、酸基の少なくとも一部が酸分解性基で保護された基を有する化合物を含む、<3>に記載のポジ型感光性樹脂組成物。
<5> 酸基の少なくとも一部が酸分解性基で保護された基を有する化合物が、下記一般式(E1)で表される化合物である、<4>に記載のポジ型感光性樹脂組成物;
Figure JPOXMLDOC01-appb-C000008
 式中、R21は、1~6価の有機基を表し、
 R22およびR23は、それぞれ独立に、水素原子、アルキル基またはアリール基を表し、
 R22およびR23のいずれか一方はアルキル基またはアリール基であり、
 R24は、アルキル基またはアリール基を表し、R24は、R22またはR23と結合して環状エーテル構造を形成していてもよく、
 n1は1~6の整数を表す。
<6> 一般式(1)において、nが1であり、Rがアリール基である、<1>~<5>のいずれかに記載のポジ型感光性樹脂組成物。
<7> 樹脂が、ポリベンゾオキサゾール前駆体である、<1>~<6>のいずれかに記載のポジ型感光性樹脂組成物。
<8> <1>~<7>のいずれかに記載のポジ型感光性樹脂組成物を基板に塗布する工程と、
 塗布されたポジ型感光性樹脂組成物から溶剤を除去する工程と、
 溶剤が除去されたポジ型感光性樹脂組成物を活性放射線で露光する工程と、
 露光されたポジ型感光性樹脂組成物を現像液により現像する工程と、
 現像されたポジ型感光性樹脂組成物を熱硬化する工程とを含む硬化膜の製造方法。
<9> 現像する工程の後、かつ熱硬化する工程の前に、現像されたポジ型感光性樹脂組成物を露光する工程を含む、<8>に記載の硬化膜の製造方法。
<10> <1>~<7>のいずれかに記載のポジ型感光性樹脂組成物を硬化してなる硬化膜。
<11> 層間絶縁膜である、<10>に記載の硬化膜。
<12> <10>または<11>に記載の硬化膜を有する、液晶表示装置。
<13> <10>または<11>に記載の硬化膜を有する、有機エレクトロルミネッセンス表示装置。
<14> <10>または<11>に記載の硬化膜を有する、タッチパネル。
As a result of investigations by the inventors, a thermal base generator represented by the following general formula (1) and an acid group and / or a group in which an acid group is protected by an acid-decomposable group are contained, The present inventors have found that a positive photosensitive resin composition excellent in sensitivity and curability can be provided by using a resin that is cured and cured and a photoacid generator in combination, and the present invention has been completed. The present invention provides the following.
<1> a resin containing an acid group and / or a group in which the acid group is protected with an acid-decomposable group, cyclized and cured by a base, a thermal base generator represented by the following general formula (1), A positive photosensitive resin composition comprising a photoacid generator and a solvent;
Figure JPOXMLDOC01-appb-C000005
In the formula, R 1 represents a hydrogen atom or an n-valent organic group,
R 2 to R 5 each independently represents a hydrogen atom or an alkyl group,
n represents an integer of 1 or more.
<2> The resin is at least one selected from a polybenzoxazole precursor containing a repeating unit represented by the general formula (2) and a polyimide precursor containing a repeating unit represented by the general formula (3). The positive photosensitive resin composition according to <1>,
Figure JPOXMLDOC01-appb-C000006
In the formula, X 1 and X 2 each independently represent a tetravalent organic group,
Y 1 and Y 2 each independently represent a divalent organic group,
R 6 and R 8 each independently represents an acid-decomposable group,
R 7 and R 9 each independently represent a hydrogen atom, a crosslinkable group, an alkyl group, an acid-decomposable group, or a group represented by —CORc,
Rc represents an alkyl group or an aryl group.
<3> The resin is at least one selected from a polybenzoxazole precursor containing a repeating unit represented by the general formula (4) and a polyimide precursor containing a repeating unit represented by the general formula (5). The positive photosensitive resin composition according to <1>,
Figure JPOXMLDOC01-appb-C000007
In the formula, X 3 and X 4 each independently represent a tetravalent organic group,
Y 3 and Y 4 each independently represent a divalent organic group,
R 10 and R 12 represent a hydrogen atom,
R 11 and R 13 each independently represent a hydrogen atom, a crosslinkable group, an alkyl group, or a group represented by —CORc,
Rc represents an alkyl group or an aryl group.
<4> The positive photosensitive resin composition according to <3>, further comprising a compound having a group in which at least a part of the acid group is protected with an acid-decomposable group.
<5> The positive photosensitive resin composition according to <4>, wherein the compound having a group in which at least a part of the acid group is protected with an acid-decomposable group is a compound represented by the following general formula (E1): object;
Figure JPOXMLDOC01-appb-C000008
In the formula, R 21 represents a monovalent to hexavalent organic group,
R 22 and R 23 each independently represents a hydrogen atom, an alkyl group or an aryl group,
Any one of R 22 and R 23 is an alkyl group or an aryl group;
R 24 represents an alkyl group or an aryl group, R 24 may be bonded to R 22 or R 23 to form a cyclic ether structure;
n1 represents an integer of 1 to 6.
<6> The positive photosensitive resin composition according to any one of <1> to <5>, wherein in general formula (1), n is 1 and R 1 is an aryl group.
<7> The positive photosensitive resin composition according to any one of <1> to <6>, wherein the resin is a polybenzoxazole precursor.
<8> Applying the positive photosensitive resin composition according to any one of <1> to <7> to a substrate;
Removing the solvent from the applied positive photosensitive resin composition;
Exposing the positive photosensitive resin composition from which the solvent has been removed with actinic radiation;
Developing the exposed positive photosensitive resin composition with a developer;
And a step of thermally curing the developed positive photosensitive resin composition.
<9> The method for producing a cured film according to <8>, including a step of exposing the developed positive photosensitive resin composition after the step of developing and before the step of thermosetting.
<10> A cured film obtained by curing the positive photosensitive resin composition according to any one of <1> to <7>.
<11> The cured film according to <10>, which is an interlayer insulating film.
<12> A liquid crystal display device having the cured film according to <10> or <11>.
<13> An organic electroluminescence display device having the cured film according to <10> or <11>.
<14> A touch panel having the cured film according to <10> or <11>.
 本発明によれば、感度および硬化性に優れたポジ型感光性樹脂組成物、硬化膜の製造方法、硬化膜、液晶表示装置、有機エレクトロルミネッセンス表示装置およびタッチパネルを提供することが可能となった。 ADVANTAGE OF THE INVENTION According to this invention, it became possible to provide the positive photosensitive resin composition excellent in the sensitivity and sclerosis | hardenability, the manufacturing method of a cured film, a cured film, a liquid crystal display device, an organic electroluminescent display device, and a touch panel. .
液晶表示装置の一例の構成概念図を示す。1 is a conceptual diagram of a configuration of an example of a liquid crystal display device. 液晶表示装置の他の例の構成概念図である。It is a composition conceptual diagram of other examples of a liquid crystal display. 有機EL表示装置の一例の構成概念図を示す。1 shows a conceptual diagram of a configuration of an example of an organic EL display device. 静電容量方式のタッチパネルの構成例を示す断面図である。It is sectional drawing which shows the structural example of a capacitive touch panel. 前面板の一例を示す説明図である。It is explanatory drawing which shows an example of a front plate. 第一の透明電極パターンおよび第二の透明電極パターンの一例を示す説明図である。It is explanatory drawing which shows an example of a 1st transparent electrode pattern and a 2nd transparent electrode pattern.
 以下において、本発明の内容について詳細に説明する。以下に記載する構成要件の説明は、本発明の代表的な実施態様に基づいてなされることがあるが、本発明はそのような実施態様に限定されるものではない。
 なお、本願明細書において「~」とはその前後に記載される数値を下限値および上限値として含む意味で使用される。
 本明細書における基(原子団)の表記において、置換および無置換を記していない表記は、置換基を有さないものと共に置換基を有するものをも包含するものである。例えば「アルキル基」とは、置換基を有さないアルキル基(無置換アルキル基)のみならず、置換基を有するアルキル基(置換アルキル基)をも包含するものである。
 本明細書中において、「(メタ)アクリレート」は、アクリレートおよびメタクリレートを表し、「(メタ)アクリル」は、アクリルおよびメタクリルを表し、「(メタ)アクリロイル」は、アクリロイルおよびメタクリロイルを表す。
 本明細書において、固形分は、25℃における固形分である。
 本明細書において、ポリマーの重量平均分子量および数平均分子量は、GPC(ゲルパーミエーションクロマトグラフ)測定によるポリスチレン換算値として定義される。ポリマーの重量平均分子量および数平均分子量は、例えば、HLC-8120(東ソー(株)製)を用い、カラムとしてTSK gel Multipore HXL-M(東ソー(株)製、7.8mmID×30.0cm)を、溶離液としてTHF(テトラヒドロフラン)を用いることによって求めることができる。
Hereinafter, the contents of the present invention will be described in detail. The description of the constituent elements described below may be made based on typical embodiments of the present invention, but the present invention is not limited to such embodiments.
In the present specification, “to” is used to mean that the numerical values described before and after it are included as a lower limit value and an upper limit value.
In the description of the group (atomic group) in this specification, the description which does not describe substitution and non-substitution includes what does not have a substituent and what has a substituent. For example, the “alkyl group” includes not only an alkyl group having no substituent (unsubstituted alkyl group) but also an alkyl group having a substituent (substituted alkyl group).
In the present specification, “(meth) acrylate” represents acrylate and methacrylate, “(meth) acryl” represents acryl and methacryl, and “(meth) acryloyl” represents acryloyl and methacryloyl.
In this specification, solid content is solid content in 25 degreeC.
In this specification, the weight average molecular weight and number average molecular weight of a polymer are defined as polystyrene conversion values by GPC (gel permeation chromatograph) measurement. The weight average molecular weight and number average molecular weight of the polymer are, for example, HLC-8120 (manufactured by Tosoh Corporation), and TSK gel Multipore HXL-M (manufactured by Tosoh Corporation, 7.8 mm ID × 30.0 cm) as a column. , By using THF (tetrahydrofuran) as an eluent.
 本発明のポジ型感光性樹脂組成物(以下、感光性樹脂組成物ともいう)は、(A)酸基および/または酸基が酸分解性基で保護された基を含有し、塩基によって環化して硬化する樹脂と、(B)後述する一般式(1)で表される熱塩基発生剤と、(C)光酸発生剤と、(D)溶剤とを含有する。
 上記構成とすることにより、感度および硬化性に優れた感光性樹脂組成物とすることができる。発明の効果発現のメカニズムの一例は下記の様に推定されるが、同様の効果を得られるものであれば特に限定はされない。即ち、一般式(1)で表される熱塩基発生剤は、カルボキシル基を有する化合物であって、通常の状態では、酸性の性状を有している。このため、加熱前の状態、特に露光段階では、組成物を酸性状態にでき、露光によるカルボキシル基やフェノール性水酸基の発生を良好に進行させ、優れた感度が達成される。この熱塩基発生剤は、加熱によりカルボキシル基が脱炭酸または脱水環化し失われることで、それまで中和され不活性化していたアミン部位が活性となり、塩基性となる。すなわち、露光後の硬化のための加熱において、熱塩基発生剤が加熱されると、下式の反応が進行して塩基が生成される。そして、熱塩基発生剤から発生した塩基により、樹脂の環化反応が促進されるので、硬化性が向上したと考えられる。
 更には、硬化膜中に遊離している酸などを中和することもできるので、酸の影響による、電極部などにおける金属変色を抑制でき、画像表示装置や入力装置などとした際における表示ムラを良化できる。
 また、一般式(1)で表される熱塩基発生剤は、室温(加熱前の状態)では酸性であるため、樹脂の環化反応を促進させない。このため、一般式(1)で表される熱塩基発生剤と、塩基によって環化して硬化が促進される樹脂とを混合した状態で、長期保存しても、加熱しなければ反応が進行しないので、保存安定性にも優れる。
Figure JPOXMLDOC01-appb-C000009
The positive photosensitive resin composition of the present invention (hereinafter also referred to as photosensitive resin composition) contains (A) an acid group and / or a group in which an acid group is protected by an acid-decomposable group, and is cyclized by a base. And (B) a thermal base generator represented by the following general formula (1), (C) a photoacid generator, and (D) a solvent.
By setting it as the said structure, it can be set as the photosensitive resin composition excellent in the sensitivity and sclerosis | hardenability. An example of the mechanism of manifestation of the effect of the invention is estimated as follows, but is not particularly limited as long as the same effect can be obtained. That is, the thermal base generator represented by the general formula (1) is a compound having a carboxyl group, and has an acidic property in a normal state. For this reason, in the state before a heating, especially in an exposure stage, a composition can be made into an acidic state, generation | occurrence | production of the carboxyl group and phenolic hydroxyl group by exposure advances favorably, and the outstanding sensitivity is achieved. In this thermal base generator, the carboxyl group is decarboxylated or dehydrated and lost by heating and the amine site that has been neutralized and inactivated becomes active and becomes basic. That is, in the heating for curing after exposure, when the thermal base generator is heated, the reaction of the following formula proceeds to generate a base. And since the cyclization reaction of resin is accelerated | stimulated with the base generate | occur | produced from the thermal base generator, it is thought that curability improved.
Furthermore, since the acid liberated in the cured film can be neutralized, metal discoloration in the electrode part due to the influence of the acid can be suppressed, and display unevenness when an image display device or an input device is used. Can be improved.
Moreover, since the thermal base generator represented by the general formula (1) is acidic at room temperature (before heating), it does not promote the cyclization reaction of the resin. For this reason, even if it preserve | saves for a long time in the state which mixed the thermal base generator represented by General formula (1), and the resin which cyclizes with a base and a hardening is accelerated | stimulated, reaction will not advance if it does not heat. Therefore, it is excellent in storage stability.
Figure JPOXMLDOC01-appb-C000009
 本発明の感光性樹脂組成物は、ポジ型感光性樹脂組成物として好ましく用いることができ、特に化学増幅型ポジ型感光性樹脂組成物として好ましく用いることができる。
 以下本発明の感光性樹脂組成物の各成分について説明する。
The photosensitive resin composition of the present invention can be preferably used as a positive photosensitive resin composition, and can be particularly preferably used as a chemically amplified positive photosensitive resin composition.
Hereinafter, each component of the photosensitive resin composition of the present invention will be described.
<(A)樹脂>
 本発明の感光性樹脂組成物は、酸基および/または酸基が酸分解性基で保護された基を含有し、塩基によって環化して硬化する樹脂を含有する。樹脂は、酸基が酸分解性基で保護された基を有するものが好ましい。この態様によれば、感度に優れた感光性樹脂組成物が得られ易い。
 樹脂は、加熱により環化反応が生じて複素環含有ポリマーを形成可能な複素環含有ポリマー前駆体が好ましい。複素環含有ポリマー前駆体としては、ポリベンゾオキサゾール前駆体および/またはポリイミド前駆体が好ましく、透過性に優れた硬化膜が得られ易いという理由からポリベンゾオキサゾール前駆体が更に好ましい。これらの樹脂は、環化温度が高く、従来は300℃以上に加熱して環化を行っていたが、本発明によれば、これらの樹脂であっても300℃以下(好ましくは200℃以下、更に好ましくは180℃以下)での加熱で環化反応を十分に進行させることができ、本発明の効果がより顕著に得られる。
 本発明の感光性樹脂組成物における樹脂の含有量は、感光性樹脂組成物の全固形分に対し30~95質量%が好ましい。下限は、40質量%以上がより好ましく、50質量%以上が更に好ましい。上限は、90質量%以下がより好ましい。
 以下、ポリベンゾオキサゾール前駆体、ポリイミド前駆体について説明する。
<(A) Resin>
The photosensitive resin composition of the present invention contains a resin that contains an acid group and / or a group in which the acid group is protected by an acid-decomposable group, and is cyclized and cured by a base. The resin preferably has a group in which an acid group is protected with an acid-decomposable group. According to this aspect, a photosensitive resin composition excellent in sensitivity is easily obtained.
The resin is preferably a heterocyclic-containing polymer precursor capable of forming a heterocyclic-containing polymer by causing a cyclization reaction by heating. As the heterocyclic-containing polymer precursor, a polybenzoxazole precursor and / or a polyimide precursor are preferable, and a polybenzoxazole precursor is more preferable because a cured film excellent in permeability can be easily obtained. These resins have a high cyclization temperature, and conventionally cyclized by heating to 300 ° C. or higher. However, according to the present invention, even these resins are 300 ° C. or lower (preferably 200 ° C. or lower). Further, the cyclization reaction can be sufficiently advanced by heating at 180 ° C. or less, and the effects of the present invention can be obtained more remarkably.
The resin content in the photosensitive resin composition of the present invention is preferably 30 to 95% by mass with respect to the total solid content of the photosensitive resin composition. The lower limit is more preferably 40% by mass or more, and further preferably 50% by mass or more. The upper limit is more preferably 90% by mass or less.
Hereinafter, the polybenzoxazole precursor and the polyimide precursor will be described.
<<ポリベンゾオキサゾール前駆体>>
(第1の態様)
 本発明において、第1の態様のポリベンゾオキサゾール前駆体は、酸基が酸分解性基で保護された基を有することが好ましく、下記一般式(2)で表される繰り返し単位を含むことがより好ましい。下記一般式(2)で表される繰り返し単位は、ポリベンゾオキサゾール前駆体の全繰り返し単位の50~100モル%の割合で含有することが好ましく、70~100モル%がより好ましい。
 第1の態様のポリベンゾオキサゾール前駆体を用いた感光性樹脂組成物は、例えば、pKaが3以下の酸を発生する光酸発生剤と組み合わせて用いることで、感度、硬化性に優れた感光性樹脂組成物が得られ易い。
Figure JPOXMLDOC01-appb-C000010
 式中、Xは、4価の有機基を表し、Yは、それぞれ独立に、2価の有機基を表し、Rは、それぞれ独立に、酸分解性基を表し、Rは、それぞれ独立に、水素原子、架橋性基、アルキル基、酸分解性基、または、-CORcで表される基を表し、Rcは、アルキル基またはアリール基を表す。
<< Polybenzoxazole precursor >>
(First aspect)
In the present invention, the polybenzoxazole precursor of the first aspect preferably has a group in which an acid group is protected by an acid-decomposable group, and includes a repeating unit represented by the following general formula (2). More preferred. The repeating unit represented by the following general formula (2) is preferably contained in a proportion of 50 to 100 mol%, more preferably 70 to 100 mol% of the total repeating units of the polybenzoxazole precursor.
The photosensitive resin composition using the polybenzoxazole precursor according to the first aspect is, for example, a photosensitive resin having excellent sensitivity and curability when used in combination with a photoacid generator that generates an acid having a pKa of 3 or less. The resin composition is easily obtained.
Figure JPOXMLDOC01-appb-C000010
In the formula, X 1 represents a tetravalent organic group, Y 1 each independently represents a divalent organic group, R 6 independently represents an acid-decomposable group, and R 7 represents Each independently represents a hydrogen atom, a crosslinkable group, an alkyl group, an acid-decomposable group, or a group represented by —CORc, and Rc represents an alkyl group or an aryl group.
 Xは、4価の有機基を表す。4価の有機基としては特に制限はないが、環状構造を少なくとも1つ以上有することが好ましく、環状構造を1~10個有することがより好ましく、1~5個有することが更に好ましい。 X 1 represents a tetravalent organic group. The tetravalent organic group is not particularly limited, but preferably has at least one cyclic structure, more preferably 1 to 10 cyclic structures, and still more preferably 1 to 5 cyclic structures.
 環状構造は、芳香族環、複素環、脂肪族環のいずれであってもよく、芳香族環または複素環を含むことが好ましく、芳香族環を含むことがより好ましい。4価の有機基が環状構造を有することにより、耐光性や耐薬品性に優れた硬化膜を形成しやすい。
 芳香族環としては、例えば、ベンゼン環、ナフタレン環、アントラセン環、フルオレン環などが挙げられる。複素環としては、フラン環、チオフェン環、ピロール環、ピロリン環、ピロリジン環、オキサゾール環、イソオキサゾール環、チアゾール環、イソチアゾール環、イミダゾール環、イミダゾリン環、イミダゾリジン環、ピラゾール環、ピラゾリン環、ピラゾリジン環、トリアゾール環、フラザン環、テトラゾール環、ピラン環、チイン環、ピリジン環、ピペリジン環、オキサジン環、モルホリン環、チアジン環、ピリダジン環、ピリミジン環、ピラジン環、ピペラジン環およびトリアジン環などが挙げられる。脂肪族環としては、シクロペンタン環、シクロヘキサン環、シクロヘプタン環などが挙げられる。
The cyclic structure may be an aromatic ring, a heterocyclic ring, or an aliphatic ring, and preferably includes an aromatic ring or a heterocyclic ring, and more preferably includes an aromatic ring. When the tetravalent organic group has a cyclic structure, it is easy to form a cured film having excellent light resistance and chemical resistance.
Examples of the aromatic ring include a benzene ring, a naphthalene ring, an anthracene ring, and a fluorene ring. As the heterocyclic ring, furan ring, thiophene ring, pyrrole ring, pyrroline ring, pyrrolidine ring, oxazole ring, isoxazole ring, thiazole ring, isothiazole ring, imidazole ring, imidazoline ring, imidazolidine ring, pyrazole ring, pyrazoline ring, Examples include pyrazolidine ring, triazole ring, furazane ring, tetrazole ring, pyran ring, thiyne ring, pyridine ring, piperidine ring, oxazine ring, morpholine ring, thiazine ring, pyridazine ring, pyrimidine ring, pyrazine ring, piperazine ring and triazine ring. It is done. Examples of the aliphatic ring include a cyclopentane ring, a cyclohexane ring, and a cycloheptane ring.
 4価の有機基が、複数の環状構造を有する場合、環は縮環していてもよく、単結合、または、連結基を介して複数の環が連結していてもよい。連結基としては、例えば、-O-、-S-、-C(CF-、-CH-、-SO-、-NHCO-およびこれらの組み合わせからなる基が好ましく、-SO-、-CH-、-C(CF-およびこれらを組み合わせてなる基がより好ましく、-C(CF-が一層好ましい。
 4価の有機基は、複数の環状構造を有する基が好ましく、2以上の芳香族環が、単結合、または、連結基を介して連結していることがより好ましい。
When the tetravalent organic group has a plurality of cyclic structures, the ring may be condensed, or a plurality of rings may be linked via a single bond or a linking group. The linking group, e.g., -O -, - S -, - C (CF 3) 2 -, - CH 2 -, - SO 2 -, - NHCO- and preferably a group comprising a combination thereof, -SO 2 —, —CH 2 —, —C (CF 3 ) 2 — and a group formed by a combination thereof are more preferable, and —C (CF 3 ) 2 — is more preferable.
The tetravalent organic group is preferably a group having a plurality of cyclic structures, and more preferably two or more aromatic rings are linked via a single bond or a linking group.
 Xの具体例としては、以下が挙げられる。以下の式中、*1または*2のいずれか一方は、-ORとの連結手を表し、他方は、ポリマー主鎖との連結手を表し、*3または*4のいずれか一方は、-ORとの連結手を表し、他方は、ポリマー主鎖との連結手を表す。
 Xは、(X-1)~(X-4)が好ましく、(X-1)、(x-3)、(X-4)がより好ましく、(X-1)が特に好ましい。Xが、(X-1)であると、溶剤溶解性、感度に優れた感光性樹脂組成物が得られ易い。
Specific examples of X 1 include the following. In the following formula, either * 1 or * 2 represents a bond to —OR 7 , the other represents a bond to the polymer main chain, and either * 3 or * 4 represents represents a linking position to -OR 8, the other represents a linking position to the polymer backbone.
X 1 is preferably (X-1) to (X-4), more preferably (X-1), (x-3), or (X-4), and particularly preferably (X-1). When X 1 is (X-1), a photosensitive resin composition excellent in solvent solubility and sensitivity is easily obtained.
Figure JPOXMLDOC01-appb-C000011
Figure JPOXMLDOC01-appb-C000011
 Rは、酸分解性基を表す。酸分解性基は、酸の作用で分解して、水酸基、カルボキシル基などのアルカリ可溶性基を生じる基であればいずれも好ましく用いられる。例えば、アセタール基、ケタール基、シリル基、シリルエーテル基、3級アルキルエステル基等を挙げることができ、感度の観点からアセタール基が好ましい。
 酸分解性基の具体例としては、tert-ブトキシカルボニル基、イソプロポキシカルボニル基、テトラヒドロピラニル基、テトラヒドロフラニル基、エトキシエチル基、メトキシエチル基、エトキシメチル基、トリメチルシリル基、tert-ブトキシカルボニルメチル基、トリメチルシリルエーテル基などが挙げられる。感度の観点からエトキシエチル基、テトラヒドロフラニル基が好ましい。
R 6 represents an acid-decomposable group. Any acid-decomposable group is preferably used as long as it decomposes by the action of an acid to generate an alkali-soluble group such as a hydroxyl group or a carboxyl group. For example, an acetal group, a ketal group, a silyl group, a silyl ether group, a tertiary alkyl ester group and the like can be mentioned, and an acetal group is preferable from the viewpoint of sensitivity.
Specific examples of the acid-decomposable group include tert-butoxycarbonyl group, isopropoxycarbonyl group, tetrahydropyranyl group, tetrahydrofuranyl group, ethoxyethyl group, methoxyethyl group, ethoxymethyl group, trimethylsilyl group, tert-butoxycarbonylmethyl. Group, trimethylsilyl ether group and the like. From the viewpoint of sensitivity, an ethoxyethyl group and a tetrahydrofuranyl group are preferred.
 Rは、水素原子、水素原子、架橋性基、アルキル基、酸分解性基、または、-CORcで表される基を表し、Rcは、アルキル基またはアリール基を表す。
 Rが表すアルキル基は、直鎖、分岐、環状のいずれでもよい。直鎖アルキル基の場合、炭素数は、1~20が好ましく、1~15がより好ましく、1~10がさらに好ましい。分岐アルキル基の場合、炭素数は、3~20が好ましく、3~15がより好ましく、3~10がさらに好ましい。環状アルキル基の場合、炭素数は、3~15が好ましく、5~15がより好ましく、5~10がより好ましい。具体的なアルキル基としては、メチル基、エチル基、プロピル基、イソプロピル基、ブチル基、イソブチル基、オクチル基、シクロペンチル基、シクロヘキシル基、ノルボルニル基、アダマンチル基などが挙げられる。アルキル基は、置換基を有していてもよく、無置換であってもよい。
 置換基の例としては、例えばフッ素原子、塩素原子、臭素原子及びヨウ素原子等のハロゲン原子、シアノ基、アミド基、スルホニルアミド基が挙げられる。
 Rが表す架橋性基は、熱によって、架橋反応が起こるものであれば制限は無い。エポキシ基、オキセタニル基、エチレン性不飽和結合を有する基、ブロックイソシアネート基、アルコキシメチル基、メチロール基、アミノ基などが挙げられる。
 Rが表す酸分解性基は、Rで説明したものが挙げられ、好ましい範囲も同様である。
 Rcが表すアルキル基は、Rで説明したアルキル基と同義であり、好ましい範囲も同様である。アルキル基は、置換基を有していてもよく、無置換であってもよい。置換基としては、上述したものが挙げられる。
 Rcが表わすアリール基としては、炭素数6~20のアリール基が好ましく、炭素数6~14のアリール基がより好ましく、炭素数6~10のアリール基がさらに好ましい。具体的にアリール基としては、フェニル基、トルイル基、メシチル基、ナフチル基などが挙げられる。アリール基は、置換基を有していてもよく、無置換であってもよい。置換基としては、上述したものが挙げられる。
R 7 represents a hydrogen atom, a hydrogen atom, a crosslinkable group, an alkyl group, an acid-decomposable group, or a group represented by —CORc, and Rc represents an alkyl group or an aryl group.
The alkyl group represented by R 7 may be linear, branched or cyclic. In the case of a straight chain alkyl group, the carbon number is preferably 1-20, more preferably 1-15, still more preferably 1-10. In the case of a branched alkyl group, the carbon number is preferably 3 to 20, more preferably 3 to 15, and still more preferably 3 to 10. In the case of a cyclic alkyl group, the carbon number is preferably 3 to 15, more preferably 5 to 15, and more preferably 5 to 10. Specific examples of the alkyl group include a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, an octyl group, a cyclopentyl group, a cyclohexyl group, a norbornyl group, and an adamantyl group. The alkyl group may have a substituent or may be unsubstituted.
Examples of the substituent include halogen atoms such as fluorine atom, chlorine atom, bromine atom and iodine atom, cyano group, amide group and sulfonylamide group.
The crosslinkable group represented by R 7 is not limited as long as a crosslinking reaction is caused by heat. Examples thereof include an epoxy group, an oxetanyl group, a group having an ethylenically unsaturated bond, a blocked isocyanate group, an alkoxymethyl group, a methylol group, and an amino group.
As the acid-decomposable group represented by R 7 , those described for R 6 can be mentioned, and the preferred range is also the same.
The alkyl group represented by Rc has the same meaning as the alkyl group described for R 7 , and the preferred range is also the same. The alkyl group may have a substituent or may be unsubstituted. Examples of the substituent include those described above.
The aryl group represented by Rc is preferably an aryl group having 6 to 20 carbon atoms, more preferably an aryl group having 6 to 14 carbon atoms, and further preferably an aryl group having 6 to 10 carbon atoms. Specific examples of the aryl group include a phenyl group, a toluyl group, a mesityl group, and a naphthyl group. The aryl group may have a substituent or may be unsubstituted. Examples of the substituent include those described above.
 第1の態様のポリベンゾオキサゾール前駆体は、ポリベンゾオキサゾール前駆体の全繰り返し単位が有する酸基の5~80%が、酸分解性基で保護されていることが好ましく、10~60%が酸分解性基で保護されていることがより好ましい。下限は、15%以上が一層好ましい。上限は、50%以下が更に好ましく、45%以下が一層好ましい。酸分解性基の含有率が上記範囲であると、感度がより一層優れる。なお、ここでいうポリベンゾオキサゾール前駆体の全繰り返し単位が有する酸基とは、酸分解性基による保護を行う前の状態のポリベンゾオキサゾール前駆体の全繰り返し単位が有する酸基を意味する。酸基としては、芳香環に直結した水酸基であることが好ましく、フェノール性水酸基であることがより好ましい。 In the polybenzoxazole precursor according to the first aspect, 5 to 80% of the acid groups of all the repeating units of the polybenzoxazole precursor are preferably protected with acid-decomposable groups, and 10 to 60% More preferably, it is protected with an acid-decomposable group. The lower limit is more preferably 15% or more. The upper limit is more preferably 50% or less, and still more preferably 45% or less. When the content of the acid-decomposable group is in the above range, the sensitivity is further improved. In addition, the acid group which all the repeating units of a polybenzoxazole precursor here mean the acid group which all the repeating units of the polybenzoxazole precursor of the state before performing protection by an acid-decomposable group have. The acid group is preferably a hydroxyl group directly bonded to an aromatic ring, and more preferably a phenolic hydroxyl group.
 Yは、2価の有機基を表す。2価の有機基としては、環状の脂肪族基、直鎖の脂肪族基、分岐の脂肪族基、芳香族環基、または、これらと、-CH-、-O-、-S-、-SO-、-CO-、-NHCO-、および-C(CF-の少なくとも1種との組み合わせからなる基を表が挙げられる。 Y 1 represents a divalent organic group. Examples of the divalent organic group include a cyclic aliphatic group, a linear aliphatic group, a branched aliphatic group, an aromatic ring group, and these, —CH 2 —, —O—, —S—, Examples include groups consisting of a combination of at least one of —SO 2 —, —CO—, —NHCO—, and —C (CF 3 ) 2 —.
 環状の脂肪族基としては、環状アルキレン基、環状アルケニレン基、環状アルキニレン基などが挙げられる。環状の脂肪族基の炭素数は、3~15が好ましく、6~12がより好ましい。炭素数が上記範囲であると、耐光性、耐薬品性に優れた硬化膜が得られ易い。環状の脂肪族基は、6員環が好ましい。Yが表す環状の脂肪族基は、置換基を有していてもよく、無置換であってもよい。無置換が好ましい。
 置換基としては、アルキル基、アルケニル基、アルキニル基、アリール基、アルコキシ基、アリールオキシ基、ハロゲン原子などが挙げられる。
 なお、環状の脂肪族基が置換基を有する場合、環状の脂肪族基の炭素数は、置換基の炭素数を除いた数とする。
 環状の脂肪族基の具体例としては、環状脂肪族ジカルボン酸のカルボキシル基の除去後に残存する残基(環状の脂肪族基)が挙げられる。具体的には、以下に示す基が挙げられ、シクロプロピレン基、シクロブチレン基、シクロペンチレン基、シクロヘキシレン基、ビスシクロヘキシレン基、アダマンチレン基が好ましく、シクロヘキシレン基またはビスシクロヘキシレン基がより好ましい。
Examples of the cyclic aliphatic group include a cyclic alkylene group, a cyclic alkenylene group, and a cyclic alkynylene group. The number of carbon atoms in the cyclic aliphatic group is preferably 3 to 15, and more preferably 6 to 12. When the carbon number is in the above range, a cured film excellent in light resistance and chemical resistance is easily obtained. The cyclic aliphatic group is preferably a 6-membered ring. The cyclic aliphatic group represented by Y 1 may have a substituent or may be unsubstituted. Unsubstituted is preferred.
Examples of the substituent include an alkyl group, an alkenyl group, an alkynyl group, an aryl group, an alkoxy group, an aryloxy group, and a halogen atom.
When the cyclic aliphatic group has a substituent, the carbon number of the cyclic aliphatic group is the number excluding the carbon number of the substituent.
Specific examples of the cyclic aliphatic group include a residue (cyclic aliphatic group) remaining after removal of the carboxyl group of the cyclic aliphatic dicarboxylic acid. Specific examples include the following groups: a cyclopropylene group, a cyclobutylene group, a cyclopentylene group, a cyclohexylene group, a biscyclohexylene group, and an adamantylene group, and a cyclohexylene group or a biscyclohexylene group is preferable. More preferred.
Figure JPOXMLDOC01-appb-C000012
Figure JPOXMLDOC01-appb-C000012
 直鎖または分岐の脂肪族基としては、アルキレン基、アルケニレン基、アルキニレン基、ポリオキシアルキレン基などが挙げられ、アルキレン基、アルケニレン基、アルキニレン基が好ましく、アルキレン基がより好ましい。
 直鎖または分岐の脂肪族基の炭素数は、4~20が好ましく、4~15がより好ましく、4~12が更に好ましい。炭素数が上記範囲であると、溶剤溶解性が良好である。
 直鎖または分岐の脂肪族基の具体例としては、直鎖の脂肪族ジカルボン酸、または、分岐の脂肪族ジカルボン酸のカルボキシル基の除去後に残存する残基(脂肪族基)が挙げられる。
 直鎖の脂肪族ジカルボン酸としては、例えば、アジピン酸、ピメリン酸、スベリン酸、アゼライン酸、セバシン酸、ウンデカン二酸、ドデカン二酸、トリデカン二酸、テトラデカン二酸、ペンタデカン二酸、ヘキサデカン二酸、ヘプタデカン二酸、オクタデカン二酸、ノナデカン二酸、エイコサン二酸、ドコサン二酸などが挙げられる。
 分岐の脂肪族ジカルボン酸としては、例えば、3-メチルグルタル酸、3,3-ジメチルグルタル酸、2-メチルアジピン酸、2-エチルアジピン酸、2-プロピルアジピン酸、2-ブチルアジピン酸、3-メチルアジピン酸、3-tert-ブチルアジピン酸、2,3-ジメチルアジピン酸、2,4-ジメチルアジピン酸、3,3-ジメチルアジピン酸、3,4-ジメチルアジピン酸、2,4,4-トリメチルアジピン酸、2,2,5,5-テトラメチルアジピン酸、2-メチルピメリン酸、3-メチルピメリン酸、3-メチルスベリン酸、2-メチルセバシン酸、ノナン-2,5-ジカルボン酸などが挙げられる。
Examples of the linear or branched aliphatic group include an alkylene group, an alkenylene group, an alkynylene group, and a polyoxyalkylene group, and an alkylene group, an alkenylene group, and an alkynylene group are preferable, and an alkylene group is more preferable.
The carbon number of the linear or branched aliphatic group is preferably 4 to 20, more preferably 4 to 15, and still more preferably 4 to 12. When the carbon number is in the above range, the solvent solubility is good.
Specific examples of the linear or branched aliphatic group include a linear aliphatic dicarboxylic acid or a residue (aliphatic group) remaining after removal of the carboxyl group of the branched aliphatic dicarboxylic acid.
Examples of linear aliphatic dicarboxylic acids include adipic acid, pimelic acid, suberic acid, azelaic acid, sebacic acid, undecanedioic acid, dodecanedioic acid, tridecanedioic acid, tetradecanedioic acid, pentadecanedioic acid, and hexadecanedioic acid. , Heptadecanedioic acid, octadecanedioic acid, nonadecanedioic acid, eicosanedioic acid, docosanedioic acid and the like.
Examples of branched aliphatic dicarboxylic acids include 3-methylglutaric acid, 3,3-dimethylglutaric acid, 2-methyladipic acid, 2-ethyladipic acid, 2-propyladipic acid, 2-butyladipic acid, 3 -Methyladipic acid, 3-tert-butyladipic acid, 2,3-dimethyladipic acid, 2,4-dimethyladipic acid, 3,3-dimethyladipic acid, 3,4-dimethyladipic acid, 2,4,4 -Trimethyladipic acid, 2,2,5,5-tetramethyladipic acid, 2-methylpimelic acid, 3-methylpimelic acid, 3-methylsuberic acid, 2-methylsebacic acid, nonane-2,5-dicarboxylic acid, etc. Can be mentioned.
 芳香族環基は、単環であってもよく、多環であってもよい。芳香族環基は、ヘテロ原子を含むヘテロ芳香族環基であってもよい。芳香族環の具体例としては、ベンゼン環、ナフタレン環、ペンタレン環、インデン環、アズレン環、ヘプタレン環、インデセン環、ペリレン環、ペンタセン環、アセナフタレン環、フェナントレン環、アントラセン環、ナフタセン環、クリセン環、トリフェニレン環、フルオレン環、ビフェニル環、ピロール環、フラン環、チオフェン環、イミダゾール環、オキサゾール環、チアゾール環、ピリジン環、ピラジン環、ピリミジン環、ピリダジン環、インドリジン環、インドール環、ベンゾフラン環、ベンゾチオフェン環、イソベンゾフラン環、キノリジン環、キノリン環、フタラジン環、ナフチリジン環、キノキサリン環、キノキサゾリン環、イソキノリン環、カルバゾール環、フェナントリジン環、アクリジン環、フェナントロリン環、チアントレン環、クロメン環、キサンテン環、フェノキサチイン環、フェノチアジン環、および、フェナジン環が挙げられる。 The aromatic ring group may be monocyclic or polycyclic. The aromatic ring group may be a heteroaromatic ring group containing a hetero atom. Specific examples of the aromatic ring include benzene ring, naphthalene ring, pentalene ring, indene ring, azulene ring, heptalene ring, indecene ring, perylene ring, pentacene ring, acenaphthalene ring, phenanthrene ring, anthracene ring, naphthacene ring, chrysene Ring, triphenylene ring, fluorene ring, biphenyl ring, pyrrole ring, furan ring, thiophene ring, imidazole ring, oxazole ring, thiazole ring, pyridine ring, pyrazine ring, pyrimidine ring, pyridazine ring, indolizine ring, indole ring, benzofuran ring Benzothiophene ring, isobenzofuran ring, quinolidine ring, quinoline ring, phthalazine ring, naphthyridine ring, quinoxaline ring, quinoxazoline ring, isoquinoline ring, carbazole ring, phenanthridine ring, acridine ring, phenanthroline ring, Ntoren ring, chromene ring, xanthene ring, phenoxathiin ring, a phenothiazine ring, and a phenazine ring.
 第1のポリベンゾオキサゾール前駆体は、Yが環状の脂肪族基で表される繰り返し単位と、Yが直鎖または分岐の脂肪族基で表される繰り返し単位とを合計で、全繰り返し単位の70mol%以上含有することが好ましく、70~100mol%が好ましく、80~100mol%が更に好ましい。また、Yが環状の脂肪族基で表される繰り返し単位と、Yが直鎖または分岐の脂肪族基で表される繰り返し単位との比率は、モル比で9:1~3:7であること好ましく、8.5:1.5~3.5:6.5がより好ましく、8:2~4:6がさらに好ましい。 The first polybenzoxazole precursor is a repeating unit in which Y 1 is a cyclic aliphatic group and a repeating unit in which Y 1 is a linear or branched aliphatic group in total. It is preferable to contain 70 mol% or more of the unit, preferably 70 to 100 mol%, more preferably 80 to 100 mol%. The ratio of the repeating unit in which Y 1 is a cyclic aliphatic group to the repeating unit in which Y 1 is a linear or branched aliphatic group is 9: 1 to 3: 7 in molar ratio. It is preferably 8.5: 1.5 to 3.5: 6.5, more preferably 8: 2 to 4: 6.
<<<他の繰り返し単位>>>
 ポリベンゾオキサゾール前駆体は、後述する一般式(4)で表される繰り返し単位を含んでいてもよい。
 また、一般式(2)で表される繰り返し単位、および、後述する一般式(4)で表される繰り返し単位以外の繰り返し単位(他の繰り返し単位ともいう)を含んでいてもよい。
 他の繰り返し単位としては、例えば、一般式(a1)で表される繰り返し単位、一般式(a2)で表される繰り返し単位が例示される。
Figure JPOXMLDOC01-appb-C000013
<<< other repeating units >>>
The polybenzoxazole precursor may contain a repeating unit represented by the following general formula (4).
Moreover, the repeating unit represented by General formula (2) and repeating units other than the repeating unit represented by General formula (4) mentioned later (it is also mentioned another repeating unit) may be included.
Examples of the other repeating unit include a repeating unit represented by the general formula (a1) and a repeating unit represented by the general formula (a2).
Figure JPOXMLDOC01-appb-C000013
 一般式(a1)中、Y11は、芳香族環基、環状の脂肪族基、直鎖の脂肪族基、分岐の脂肪族基、または、これらと、-CH-、-O-、-S-、-SO-、-CO-、-NHCO-、および-C(CF-の少なくとも1種との組み合わせからなる基を表し、X11は、芳香族環基、環状の脂肪族基、または、これらと、-CH-、-O-、-S-、-SO-、-CO-、-NHCO-、および-C(CF-との組み合わせからなる基を表す。
 芳香族環基、環状の脂肪族基、直鎖の脂肪族基、分岐の脂肪族基は、上述したものが挙げられ、好ましい範囲も同様である。
In the general formula (a1), Y 11 represents an aromatic ring group, a cyclic aliphatic group, a linear aliphatic group, a branched aliphatic group, or these, —CH 2 —, —O—, — Represents a group consisting of a combination of at least one of S—, —SO 2 —, —CO—, —NHCO—, and —C (CF 3 ) 2 —, and X 11 represents an aromatic ring group, a cyclic aliphatic group A group consisting of a group group or a combination thereof with —CH 2 —, —O—, —S—, —SO 2 —, —CO—, —NHCO—, and —C (CF 3 ) 2 —. To express.
Examples of the aromatic ring group, the cyclic aliphatic group, the linear aliphatic group, and the branched aliphatic group include those described above, and preferred ranges thereof are also the same.
 一般式(a2)、Y12は、芳香族環基、環状の脂肪族基、直鎖の脂肪族基、分岐の脂肪族基、または、これらと、-CH-、-O-、-S-、-SO-、-CO-、-NHCO-、および-C(CF-の少なくとも1種との組み合わせからなる基を表し、X12は、ケイ素原子を含む基を表す。
 芳香族環基、環状の脂肪族基、直鎖の脂肪族基、分岐の脂肪族基は、上述したものが挙げられ、好ましい範囲も同様である。
 X12が表す、ケイ素原子を含む基は、下記で表される基であることが好ましい。
Figure JPOXMLDOC01-appb-C000014
 R20およびR21はそれぞれ独立に2価の有機基を表し、R22およびR23はそれぞれ独立に1価の有機基を表す。
In the general formula (a2), Y 12 represents an aromatic ring group, a cyclic aliphatic group, a linear aliphatic group, a branched aliphatic group, or these, —CH 2 —, —O—, —S -, -SO 2- , -CO-, -NHCO-, and a group consisting of a combination with at least one of -C (CF 3 ) 2- are represented, and X 12 represents a group containing a silicon atom.
Examples of the aromatic ring group, the cyclic aliphatic group, the linear aliphatic group, and the branched aliphatic group include those described above, and preferred ranges thereof are also the same.
The group containing a silicon atom represented by X 12 is preferably a group represented by the following.
Figure JPOXMLDOC01-appb-C000014
R 20 and R 21 each independently represent a divalent organic group, and R 22 and R 23 each independently represent a monovalent organic group.
 R20およびR21で表される2価の有機基としては特に制限はないが、具体的に炭素数1~20の直鎖もしくは分岐のアルキレン基、炭素数6~20のアリーレン基、炭素数3~20の2価の環状脂肪族基、またはこれらを組み合わせてなる基が挙げられる。
 直鎖または分岐のアルキレン基の炭素数は、1~20が好ましく、1~10がより好ましく、1~6がさらに好ましい。具体的には、メチレン基、エチレン基、プロピレン基、イソプロピレン基、ブチレン基、t-ブチレン基などが挙げられる。
 アリーレン基の炭素数は、6~20が好ましく、6~14がより好ましく、6~10がさらに好ましい。具体的なアリーレン基としては、1,4-フェニレン基、1,3-フェニレン基、1,2-フェニレン基、ナフチレン基、アントラセニレン基などが挙げられる。
 2価の環状脂肪族基の炭素数は、3~20が好ましく、3~10がより好ましく、5~6がさらに好ましい。2価の環状脂肪族基としては、1,4-シクロヘキシレン基、1,3-シクロヘキシレン基、1,2-シクロヘキシレン基などが挙げられる。
 炭素数1~20の直鎖もしくは分岐のアルキレン基、炭素数6~20のアリーレン基、および炭素数3~20の2価の環状脂肪族基は置換基を有していてもよい。置換基としては、炭素数1~6のアルキル基、ハロゲン原子、シアノ基、アミド基、スルホニルアミド基などを挙げることができる。
 炭素数1~20の直鎖もしくは分岐のアルキレン基、炭素数6~20のアリーレン基、または炭素数3~20の2価の環状脂肪族基を組み合わせてなる基としては、特に制限はないが、炭素数3~20の2価の環状脂肪族基を組み合わせてなる基を組み合わせた基であることが好ましい。以下、炭素数1~20の直鎖もしくは分岐のアルキレン基、炭素数6~20のアリーレン基、または炭素数3~20の2価の環状脂肪族基を組み合わせてなる基の具体例としては、以下のものが挙げられるが、これらに限定されるものではない。
Figure JPOXMLDOC01-appb-C000015
The divalent organic group represented by R 20 and R 21 is not particularly limited, but specifically, a linear or branched alkylene group having 1 to 20 carbon atoms, an arylene group having 6 to 20 carbon atoms, a carbon number Examples thereof include 3 to 20 divalent cycloaliphatic groups, or groups formed by combining these groups.
The carbon number of the linear or branched alkylene group is preferably 1-20, more preferably 1-10, and even more preferably 1-6. Specific examples include a methylene group, an ethylene group, a propylene group, an isopropylene group, a butylene group, and a t-butylene group.
The carbon number of the arylene group is preferably 6 to 20, more preferably 6 to 14, and further preferably 6 to 10. Specific examples of the arylene group include a 1,4-phenylene group, a 1,3-phenylene group, a 1,2-phenylene group, a naphthylene group, and an anthracenylene group.
The carbon number of the divalent cycloaliphatic group is preferably 3 to 20, more preferably 3 to 10, and further preferably 5 to 6. Examples of the divalent cycloaliphatic group include a 1,4-cyclohexylene group, a 1,3-cyclohexylene group, and a 1,2-cyclohexylene group.
The linear or branched alkylene group having 1 to 20 carbon atoms, the arylene group having 6 to 20 carbon atoms, and the divalent cyclic aliphatic group having 3 to 20 carbon atoms may have a substituent. Examples of the substituent include an alkyl group having 1 to 6 carbon atoms, a halogen atom, a cyano group, an amide group, and a sulfonylamide group.
The group formed by combining a straight chain or branched alkylene group having 1 to 20 carbon atoms, an arylene group having 6 to 20 carbon atoms, or a divalent cyclic aliphatic group having 3 to 20 carbon atoms is not particularly limited. A group formed by combining groups formed by combining divalent cycloaliphatic groups having 3 to 20 carbon atoms is preferable. Specific examples of the group formed by combining a linear or branched alkylene group having 1 to 20 carbon atoms, an arylene group having 6 to 20 carbon atoms, or a divalent cyclic aliphatic group having 3 to 20 carbon atoms are as follows: Although the following are mentioned, it is not limited to these.
Figure JPOXMLDOC01-appb-C000015
 R22およびR23で表される1価の有機基としては、炭素数1~20の直鎖もしくは分岐のアルキル基もしくは炭素数6~20のアリール基が挙げられる。
直鎖もしくは分岐のアルキル基の炭素数は、1~20が好ましく、1~10がより好ましく、1~6が更に好ましい。具体的には、アルキル基としては、メチル基、エチル基、プロピル基、イソプロピル基、ブチル基、t-ブチル基などが挙げられる。
 アリール基の炭素数は、6~20が好ましく、炭素数6~14がより好ましく、6~10がさらに好ましい。具体的にアリール基としては、フェニル基、トルイル基、メシチル基、ナフチル基などが挙げられる。
 炭素数1~20の直鎖もしくは分岐のアルキル基、アリール基は置換基を有していてもよい。置換基としては、炭素数1~6のアルキル基、ハロゲン原子、シアノ基、アミド基、スルホニルアミド基などを挙げることができる。
Examples of the monovalent organic group represented by R 22 and R 23 include a linear or branched alkyl group having 1 to 20 carbon atoms or an aryl group having 6 to 20 carbon atoms.
The carbon number of the linear or branched alkyl group is preferably 1-20, more preferably 1-10, still more preferably 1-6. Specifically, examples of the alkyl group include a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, and a t-butyl group.
The aryl group preferably has 6 to 20 carbon atoms, more preferably 6 to 14 carbon atoms, and still more preferably 6 to 10 carbon atoms. Specific examples of the aryl group include a phenyl group, a toluyl group, a mesityl group, and a naphthyl group.
The linear or branched alkyl group or aryl group having 1 to 20 carbon atoms may have a substituent. Examples of the substituent include an alkyl group having 1 to 6 carbon atoms, a halogen atom, a cyano group, an amide group, and a sulfonylamide group.
(第2の態様)
 本発明において、第2の態様のポリベンゾオキサゾール前駆体は、下記一般式(4)で表される繰り返し単位を含むことがより好ましい。下記一般式(4)で表される繰り返し単位は、ポリベンゾオキサゾール前駆体の全繰り返し単位の50~100モル%の割合で含有することが好ましく、70~100モル%がより好ましい。
Figure JPOXMLDOC01-appb-C000016
 式中、Xは、4価の有機基を表し、Yは、2価の有機基を表し、R10は、水素原子を表し、R11は、水素原子、架橋性基、アルキル基、または、-CORcで表される基を表し、Rcは、アルキル基またはアリール基を表す。
(Second aspect)
In the present invention, it is more preferable that the polybenzoxazole precursor of the second aspect includes a repeating unit represented by the following general formula (4). The repeating unit represented by the following general formula (4) is preferably contained in a proportion of 50 to 100 mol%, more preferably 70 to 100 mol% of the total repeating units of the polybenzoxazole precursor.
Figure JPOXMLDOC01-appb-C000016
In the formula, X 3 represents a tetravalent organic group, Y 3 represents a divalent organic group, R 10 represents a hydrogen atom, R 11 represents a hydrogen atom, a crosslinkable group, an alkyl group, Alternatively, it represents a group represented by —CORc, and Rc represents an alkyl group or an aryl group.
 一般式(4)におけるX、Yは、一般式(2)におけるX、Yと同義であり、好ましい範囲も同様である。
 一般式(4)のR11が表す、架橋性基、アルキル基、-CORcで表される基は、一般式(2)のRで説明した、架橋性基、アルキル基、-CORcで表される基と同義であり、好ましい範囲も同様である。
X 3 and Y 3 in the general formula (4) have the same meanings as X 1 and Y 1 in the general formula (2), and preferred ranges thereof are also the same.
The crosslinkable group, alkyl group, and group represented by —CORc represented by R 11 in the general formula (4) are represented by the crosslinkable group, alkyl group, and —CORc described in R 7 of the general formula (2). And the preferred range is also the same.
 第2の態様のポリベンゾオキサゾール前駆体は、全繰り返し単位に含まれるR10およびR11の5~100%が水素原子であることが好ましく、60~95%が水素原子であることがより好ましい。下限は、70%以上が一層好ましい。上限は、90%以下が一層好ましい。特に、水素原子の含有率が上記範囲であると、感度がより一層優れる。
 第2の態様のポリベンゾオキサゾール前駆体は、上述した他の繰り返し単位をさらに含んでいてもよい。他の繰り返し単位としては、例えば、上述した一般式(a1)で表される繰り返し単位、一般式(a2)で表される繰り返し単位が例示される。
 第2の態様のポリベンゾオキサゾール前駆体を用いた感光性樹脂組成物は、光酸発生剤として、キノンジアジド化合物を使用したり、後述する酸基の少なくとも一部が酸分解性基で保護された基を有する化合物((E)化合物)をさらに配合することで、感度に優れた感光性樹脂組成物が得られ易い。
In the polybenzoxazole precursor of the second aspect, 5 to 100% of R 10 and R 11 contained in all repeating units are preferably hydrogen atoms, and more preferably 60 to 95% are hydrogen atoms. . The lower limit is more preferably 70% or more. The upper limit is more preferably 90% or less. In particular, when the hydrogen atom content is in the above range, the sensitivity is further improved.
The polybenzoxazole precursor of the second aspect may further contain other repeating units described above. Examples of the other repeating unit include the repeating unit represented by the general formula (a1) and the repeating unit represented by the general formula (a2).
In the photosensitive resin composition using the polybenzoxazole precursor according to the second aspect, a quinonediazide compound is used as a photoacid generator, or at least a part of an acid group described later is protected with an acid-decomposable group. By further blending a compound having a group ((E) compound), a photosensitive resin composition excellent in sensitivity can be easily obtained.
 本発明におけるポリベンゾオキサゾール前駆体は、末端が、単官能酸クロリドによって封止された構造を有することが好ましい。この態様によれば、透過率の良好な硬化膜が得られ易い。単官能酸クロリドとしては、例えば、塩化アセチル、ブチリルクロリド、プロピオン酸クロリド、2-エチルヘキサン酸クロリド、シクロヘキサンカルボン酸クロリド、塩化ベンゾイル、ナフトイルクロリド、アクリル酸クロリド、ヘプタン酸クロリド、イソブチリルクロリド、イソノナノイルクロリド、ネオデカノイルクロリド、オクタノイルクロリド、ピバロイルクロリド、バレロイルクロリド、メトキシアセチルクロリド、アセトキシアセチルクロリド、フェニルアセチルクロリド、シンナモイルクロリド、メタクリル酸クロリド、2-フロイルクロリド、3-クロロプロピオニルクロリド、4-クロロブチリルクロリド、5-クロロバレリルクロリド、ジエチルカルバモイルクロリド、メチルクロロホルメート、エチルクロロホルメート、プロピルクロロホルメート、n-ブチルクロロホルメート、sec-ブチルクロロホルメート、ペンチルクロロホルメート、n-ヘキシルクロロホルメート、n-オクチルクロロホルメート、2-エチルヘキシルクロロホルメート、シクロヘキシルクロロホルメート、4-tert-ブチルシクロヘキシルクロロホルメート、セチルクロロホルメート、ベンジルクロロホルメート、2-クロロエチルクロロホルメートなどが挙げられる。
 溶剤溶解性の観点では、炭素数3以上の酸クロリドが好ましい。耐溶剤性の観点では、炭素数12以下の酸クロリドが好ましい。熱安定性の観点では、カルボン酸クロリドが好ましい。
The polybenzoxazole precursor in the present invention preferably has a structure in which the terminal is sealed with a monofunctional acid chloride. According to this aspect, a cured film with good transmittance is easily obtained. Examples of monofunctional acid chlorides include acetyl chloride, butyryl chloride, propionic acid chloride, 2-ethylhexanoic acid chloride, cyclohexanecarboxylic acid chloride, benzoyl chloride, naphthoyl chloride, acrylic acid chloride, heptanoic acid chloride, isobutyryl. Chloride, isononanoyl chloride, neodecanoyl chloride, octanoyl chloride, pivaloyl chloride, valeroyl chloride, methoxyacetyl chloride, acetoxyacetyl chloride, phenylacetyl chloride, cinnamoyl chloride, methacrylic chloride, 2-furoyl chloride , 3-chloropropionyl chloride, 4-chlorobutyryl chloride, 5-chlorovaleryl chloride, diethylcarbamoyl chloride, methylchloroformate, ethylchloroforme , Propylchloroformate, n-butylchloroformate, sec-butylchloroformate, pentylchloroformate, n-hexylchloroformate, n-octylchloroformate, 2-ethylhexylchloroformate, cyclohexylchloroformate Mate, 4-tert-butylcyclohexyl chloroformate, cetyl chloroformate, benzyl chloroformate, 2-chloroethyl chloroformate and the like.
From the viewpoint of solvent solubility, an acid chloride having 3 or more carbon atoms is preferred. From the viewpoint of solvent resistance, an acid chloride having 12 or less carbon atoms is preferred. From the viewpoint of thermal stability, carboxylic acid chloride is preferred.
 ポリベンゾオキサゾール前駆体は、片側末端または両末端が、一般式(b1)で表される基であることが好ましく、両末端が、一般式(b1)で表される基であることがより好ましい。
一般式(b1)
Figure JPOXMLDOC01-appb-C000017
 一般式(b1)中、Zは単結合、炭素原子または硫黄原子を表し、R30は1価の有機基を表し、nは0または1を表し、Zが単結合の場合、aは0であり、Zが炭素原子の場合、aは1であり、Zが硫黄原子の場合、aは2であり、nが0の場合、2つのR30は、互いに結合し環を形成していてもよい。
In the polybenzoxazole precursor, one end or both ends are preferably groups represented by the general formula (b1), and both ends are more preferably groups represented by the general formula (b1). .
Formula (b1)
Figure JPOXMLDOC01-appb-C000017
In the general formula (b1), Z represents a single bond, a carbon atom or a sulfur atom, R 30 represents a monovalent organic group, n represents 0 or 1, and when Z is a single bond, a is 0. Yes, when Z is a carbon atom, a is 1, when Z is a sulfur atom, a is 2, and when n is 0, two R 30 may be bonded to each other to form a ring. Good.
 Zは、単結合、炭素原子または硫黄原子を表し、単結合、または、炭素原子が好ましい。
 R30は1価の有機基を表す。1価の有機基としては特に制限はないが、一分子あたりの式量が20~500のものが例示される。また、1価の有機基を構成する原子は、炭素原子、酸素原子、窒素原子、水素原子、硫黄原子から選択されることが好ましく、炭素原子、酸素原子、窒素原子、水素原子から選択されることがより好ましい。
 具体的には、アルキル基(好ましくは炭素数1~10、より好ましくは炭素数1~6)、アルケニル基(好ましくは炭素数2~10、より好ましくは炭素数2~6)、アルキニル基(好ましくは炭素数2~10、より好ましくは炭素数2~6)、アリール基(好ましくは炭素数6~20、より好ましくは炭素数6~10)、アルコキシ基(好ましくは炭素数1~10、より好ましくは炭素数1~6)、カルボキシル基、架橋性基、ならびに、酸素原子、カルボニル基、スルホニル基、アリーレン基(好ましくは炭素数6~20、より好ましくは炭素数6~10)、アルキレン基(好ましくは炭素数1~10、より好ましくは炭素数1~6)、アルケニレン基(好ましくは炭素数2~10、より好ましくは炭素数2~6)、およびアルキニレン基(好ましくは炭素数2~10、より好ましくは炭素数2~6)と、アルケニル基、アルキニル基、アリール基、カルボニル基、カルボキシル基、酸素原子、アルキレン基、アルキニレン基またはアリーレン基との組み合わせからなる基であることがより好ましい。
 これらの基は、置換基を有していてもよく、置換基としては、水酸基、アルキル基、ハロゲン原子、シアノ基、アミド基、スルホニルアミド基などを挙げることができる。
Z represents a single bond, a carbon atom or a sulfur atom, and preferably a single bond or a carbon atom.
R 30 represents a monovalent organic group. The monovalent organic group is not particularly limited, and examples thereof include those having a formula weight of 20 to 500 per molecule. Further, the atoms constituting the monovalent organic group are preferably selected from carbon atoms, oxygen atoms, nitrogen atoms, hydrogen atoms, and sulfur atoms, and are selected from carbon atoms, oxygen atoms, nitrogen atoms, and hydrogen atoms. It is more preferable.
Specifically, an alkyl group (preferably 1 to 10 carbon atoms, more preferably 1 to 6 carbon atoms), an alkenyl group (preferably 2 to 10 carbon atoms, more preferably 2 to 6 carbon atoms), an alkynyl group ( Preferably 2 to 10 carbon atoms, more preferably 2 to 6 carbon atoms), an aryl group (preferably 6 to 20 carbon atoms, more preferably 6 to 10 carbon atoms), an alkoxy group (preferably 1 to 10 carbon atoms, More preferably 1 to 6 carbon atoms, carboxyl group, crosslinkable group, oxygen atom, carbonyl group, sulfonyl group, arylene group (preferably 6 to 20 carbon atoms, more preferably 6 to 10 carbon atoms), alkylene Groups (preferably having 1 to 10 carbon atoms, more preferably 1 to 6 carbon atoms), alkenylene groups (preferably having 2 to 10 carbon atoms, more preferably 2 to 6 carbon atoms), and alkynylene. (Preferably having 2 to 10 carbon atoms, more preferably 2 to 6 carbon atoms) and a combination of alkenyl group, alkynyl group, aryl group, carbonyl group, carboxyl group, oxygen atom, alkylene group, alkynylene group or arylene group It is more preferable that
These groups may have a substituent, and examples of the substituent include a hydroxyl group, an alkyl group, a halogen atom, a cyano group, an amide group, and a sulfonylamide group.
 一般式(b1)で表される基の具体例としては、以下のものが挙げられるが、これらに限定されるものではない。式中、Phはフェニル基を表し、n-Prは、n-プロピレン基を表す。
Figure JPOXMLDOC01-appb-C000018
Figure JPOXMLDOC01-appb-C000019
Figure JPOXMLDOC01-appb-C000020
Figure JPOXMLDOC01-appb-C000021
Specific examples of the group represented by the general formula (b1) include the following, but are not limited thereto. In the formula, Ph represents a phenyl group, and n-Pr represents an n-propylene group.
Figure JPOXMLDOC01-appb-C000018
Figure JPOXMLDOC01-appb-C000019
Figure JPOXMLDOC01-appb-C000020
Figure JPOXMLDOC01-appb-C000021
 ポリベンゾオキサゾール前駆体は、重量平均分子量(Mw)が3,000~200,000が好ましい。下限は、4,000以上がより好ましく、5,000以上が更に好ましい。上限は、100,000以下がより好ましく、50,000以下が更に好ましい。また、数平均分子量(Mn)は、1,000~50,000が好ましい。下限は、2,000以上がより好ましく、3,000以上が更に好ましい。上限は、40,000以下がより好ましく、30,000以下が更に好ましい。この範囲とすることでリソグラフィー性能と硬化膜物性とを優れたものとすることができる。 The polybenzoxazole precursor preferably has a weight average molecular weight (Mw) of 3,000 to 200,000. The lower limit is more preferably 4,000 or more, and still more preferably 5,000 or more. The upper limit is more preferably 100,000 or less, and even more preferably 50,000 or less. The number average molecular weight (Mn) is preferably 1,000 to 50,000. The lower limit is more preferably 2,000 or more, and still more preferably 3,000 or more. The upper limit is more preferably 40,000 or less, and still more preferably 30,000 or less. By setting it as this range, the lithography performance and the cured film physical properties can be made excellent.
 本発明で用いるポリベンゾオキサゾール前駆体は、特開2008-224970号公報の記載を参酌して合成することができる。また、本発明では、末端を単官能酸クロリドで封止することが好ましい。単官能酸クロリドによる末端の封止は、例えば、重合反応の際に単官能酸クロリドを混ぜておくことにより一度に合成することができる。 The polybenzoxazole precursor used in the present invention can be synthesized in consideration of the description in JP-A-2008-224970. Moreover, in this invention, it is preferable to seal | block a terminal with a monofunctional acid chloride. The end-capping with a monofunctional acid chloride can be synthesized at once, for example, by mixing the monofunctional acid chloride during the polymerization reaction.
<<ポリイミド前駆体>>
(第1の態様)
 本発明において、第1の態様のポリイミド前駆体は、酸基が酸分解性基で保護された基を有することが好ましく、下記一般式(3)で表される繰り返し単位を含むことがより好ましい。下記一般式(3)で表される繰り返し単位は、ポリイミド前駆体の全繰り返し単位の50~100モル%の割合で含有することが好ましく、70~100モル%がより好ましい。
 第1の態様のポリイミド前駆体を用いた感光性樹脂組成物は、例えば、pKaが3以下の酸を発生する光酸発生剤と組み合わせて用いることで、感度、硬化性に優れた感光性樹脂組成物が得られ易い。
Figure JPOXMLDOC01-appb-C000022
 式中、Xは、4価の有機基を表し、Yは、2価の有機基を表し、Rは、酸分解性基を表し、Rは、水素原子、架橋性基、アルキル基、酸分解性基、または、-CORcで表される基を表し、Rcは、アルキル基またはアリール基を表す。
 一般式(3)におけるX、Yは、一般式(2)で説明したX、Yと同様のものが挙げられ、好ましい範囲も同様である。
 一般式(3)のRが表す、酸分解性基、Rが表す、架橋性基、アルキル基、酸分解性基、-CORcで表される基は、一般式(2)のR、Rで説明した、架橋性基、アルキル基、酸分解性基、-CORcで表される基と同様のものが挙げられ、好ましい範囲も同様である。
<< Polyimide precursor >>
(First aspect)
In the present invention, the polyimide precursor of the first aspect preferably has a group in which an acid group is protected by an acid-decomposable group, and more preferably includes a repeating unit represented by the following general formula (3). . The repeating unit represented by the following general formula (3) is preferably contained in a proportion of 50 to 100 mol%, more preferably 70 to 100 mol% of the total repeating units of the polyimide precursor.
The photosensitive resin composition using the polyimide precursor of the first aspect is, for example, a photosensitive resin excellent in sensitivity and curability when used in combination with a photoacid generator that generates an acid having a pKa of 3 or less. A composition is easily obtained.
Figure JPOXMLDOC01-appb-C000022
In the formula, X 2 represents a tetravalent organic group, Y 2 represents a divalent organic group, R 8 represents an acid-decomposable group, and R 9 represents a hydrogen atom, a crosslinkable group, an alkyl group. Represents a group, an acid-decomposable group, or a group represented by —CORc, and Rc represents an alkyl group or an aryl group.
Examples of X 2 and Y 2 in the general formula (3) include the same as X 1 and Y 1 described in the general formula (2), and preferred ranges are also the same.
The acid-decomposable group represented by R 8 in the general formula (3), the crosslinkable group, the alkyl group, the acid-decomposable group, and the group represented by —CORc represented by R 9 are represented by R 6 in the general formula (2). , R 7 , the same groups as the crosslinkable group, alkyl group, acid-decomposable group, and group represented by —CORc are mentioned, and the preferred range is also the same.
 第1の態様のポリイミド前駆体は、ポリイミド前駆体の全繰り返し単位が有する酸基の5~80%が、酸分解性基で保護されていることが好ましく、10~60%が酸分解性基で保護されていることがより好ましい。下限は、15%以上が一層好ましい。上限は、50%以下が更に好ましく、45%以下が一層好ましい。この態様によれば、高感度な感光性樹脂組成物とすることができる。特に、酸分解性基の含有率が上記範囲であると、感度がより一層優れる。なお、ここでいうポリイミド前駆体の全繰り返し単位が有する酸基とは、酸分解性基による保護を行う前の状態のポリイミド前駆体の全繰り返し単位が有する酸基を意味する。酸基としては、芳香環に直結した水酸基であることが好ましく、フェノール性水酸基であることがより好ましい。 In the polyimide precursor of the first aspect, 5 to 80% of the acid groups of all the repeating units of the polyimide precursor are preferably protected with acid-decomposable groups, and 10 to 60% are preferably acid-decomposable groups. More preferably, it is protected by. The lower limit is more preferably 15% or more. The upper limit is more preferably 50% or less, and still more preferably 45% or less. According to this aspect, a highly sensitive photosensitive resin composition can be obtained. In particular, when the content of the acid-decomposable group is within the above range, the sensitivity is further improved. In addition, the acid group which all the repeating units of a polyimide precursor here have means the acid group which all the repeating units of the polyimide precursor of the state before performing protection by an acid-decomposable group have. The acid group is preferably a hydroxyl group directly bonded to an aromatic ring, and more preferably a phenolic hydroxyl group.
 第1の態様のポリイミド前駆体は、後述する一般式(5)で表される繰り返し単位を含んでいてもよい。また、上述したポリベンゾオキサゾール前駆体で説明した他の繰り返し単位を含んでいてもよい。他の繰り返し単位としては、例えば、上述した一般式(a1)で表される繰り返し単位、一般式(a2)で表される繰り返し単位が例示される。 The polyimide precursor of the first aspect may contain a repeating unit represented by the general formula (5) described later. Moreover, the other repeating unit demonstrated with the polybenzoxazole precursor mentioned above may be included. Examples of the other repeating unit include the repeating unit represented by the general formula (a1) and the repeating unit represented by the general formula (a2).
(第2の態様)
 本発明において、第2の態様のポリイミド前駆体は、下記一般式(5)で表される繰り返し単位を含むことが好ましい。下記一般式(5)で表される繰り返し単位は、ポリイミド前駆体の全繰り返し単位の50~100モル%の割合で含有することが好ましく、70~100モル%がより好ましい。
Figure JPOXMLDOC01-appb-C000023
 式中、Xは、4価の有機基を表し、Yは、2価の有機基を表し、R12は、水素原子を表し、R13は、水素原子、架橋性基、アルキル基、または、-CORcで表される基を表し、Rcは、アルキル基またはアリール基を表す。
 一般式(5)におけるX、Yは、一般式(2)で説明したX、Yと同様のものが挙げられ、好ましい範囲も同様である。
 一般式(5)のR13が表す、架橋性基、アルキル基、-CORcで表される基は、一般式(2)のRで説明した、架橋性基、アルキル基、-CORcで表される基と同様のものが挙げられ、好ましい範囲も同様である。
(Second aspect)
In this invention, it is preferable that the polyimide precursor of a 2nd aspect contains the repeating unit represented by following General formula (5). The repeating unit represented by the following general formula (5) is preferably contained in a proportion of 50 to 100 mol%, more preferably 70 to 100 mol% of the total repeating units of the polyimide precursor.
Figure JPOXMLDOC01-appb-C000023
In the formula, X 4 represents a tetravalent organic group, Y 4 represents a divalent organic group, R 12 represents a hydrogen atom, R 13 represents a hydrogen atom, a crosslinkable group, an alkyl group, Alternatively, it represents a group represented by —CORc, and Rc represents an alkyl group or an aryl group.
Examples of X 4 and Y 4 in the general formula (5) include the same as X 1 and Y 1 described in the general formula (2), and preferred ranges are also the same.
The crosslinkable group, alkyl group, and group represented by —CORc represented by R 13 in the general formula (5) are represented by the crosslinkable group, alkyl group, and —CORc described in R 7 of the general formula (2). Examples thereof are the same as those described above, and preferred ranges are also the same.
 第2の態様のポリイミド前駆体は、全繰り返し単位に含まれるR12およびR13の5~100%が水素原子であることが好ましく、60~95%が水素原子であることがより好ましい。下限は、70%以上が一層好ましい。上限は、90%以下が一層好ましい。特に、水素原子の含有率が上記範囲であると、感度がより一層優れる。
 第2の態様のポリイミド前駆体を用いた感光性樹脂組成物は、光酸発生剤として、キノンジアジド化合物を使用したり、酸基の少なくとも一部が酸分解性基で保護された化合物をさらに配合することで、感度に優れた感光性樹脂組成物が得られ易い。
In the polyimide precursor of the second aspect, 5 to 100% of R 12 and R 13 contained in all repeating units are preferably hydrogen atoms, and more preferably 60 to 95% are hydrogen atoms. The lower limit is more preferably 70% or more. The upper limit is more preferably 90% or less. In particular, when the hydrogen atom content is in the above range, the sensitivity is further improved.
The photosensitive resin composition using the polyimide precursor of the second aspect further uses a quinonediazide compound as a photoacid generator, or a compound in which at least a part of the acid group is protected with an acid-decomposable group. By doing so, it is easy to obtain a photosensitive resin composition excellent in sensitivity.
 第2の態様のポリイミド前駆体は、上述したポリベンゾオキサゾール前駆体で説明した他の繰り返し単位を含んでいてもよい。他の繰り返し単位としては、例えば、上述した一般式(a1)で表される繰り返し単位、一般式(a2)で表される繰り返し単位が例示される。 The polyimide precursor of the second aspect may contain other repeating units described for the polybenzoxazole precursor described above. Examples of the other repeating unit include the repeating unit represented by the general formula (a1) and the repeating unit represented by the general formula (a2).
 ポリイミド前駆体は、重量平均分子量(Mw)が3,000~200,000が好ましい。下限は、4,000以上がより好ましく、5,000以上が更に好ましい。上限は、100,000以下がより好ましく、50,000以下が更に好ましい。また、数平均分子量(Mn)は、1,000~50,000が好ましい。下限は、2,000以上がより好ましく、3,000以上が更に好ましい。上限は、40,000以下がより好ましく、30,000以下が更に好ましい。この範囲とすることでリソグラフィー性能と硬化膜物性とを優れたものとすることができる。
 本発明で用いるポリイミド前駆体は、テトラカルボン酸二無水物とジアミンとを反応させて合成できる。例えば、特開2014-66764号公報の記載を参酌して合成することができる。
The polyimide precursor preferably has a weight average molecular weight (Mw) of 3,000 to 200,000. The lower limit is more preferably 4,000 or more, and still more preferably 5,000 or more. The upper limit is more preferably 100,000 or less, and even more preferably 50,000 or less. The number average molecular weight (Mn) is preferably 1,000 to 50,000. The lower limit is more preferably 2,000 or more, and still more preferably 3,000 or more. The upper limit is more preferably 40,000 or less, and still more preferably 30,000 or less. By setting it as this range, the lithography performance and the cured film physical properties can be made excellent.
The polyimide precursor used in the present invention can be synthesized by reacting tetracarboxylic dianhydride and diamine. For example, it can be synthesized in consideration of the description in JP-A-2014-66764.
<(B)熱塩基発生剤>
 本発明の感光性樹脂組成物は、下記一般式(1)で表される熱塩基発生剤を含有する。以下、一般式(1)で表される熱塩基発生剤を、(B)熱塩基発生剤ともいう。
Figure JPOXMLDOC01-appb-C000024
 式中、Rは、水素原子またはn価の有機基を表し、
 R~Rは、それぞれ独立に、水素原子またはアルキル基を表し、nは、1以上の整数を表す。
<(B) Thermal base generator>
The photosensitive resin composition of the present invention contains a thermal base generator represented by the following general formula (1). Hereinafter, the thermal base generator represented by the general formula (1) is also referred to as (B) thermal base generator.
Figure JPOXMLDOC01-appb-C000024
In the formula, R 1 represents a hydrogen atom or an n-valent organic group,
R 2 to R 5 each independently represents a hydrogen atom or an alkyl group, and n represents an integer of 1 or more.
 一般式(1)中、Rは、水素原子またはn価の有機基を表す。有機基としては、脂肪族基、芳香族環基、および、脂肪族基または芳香族環基と、後述する連結基とを組み合わせてなる基などが挙げられる。連結基としては、例えば、-COO-、-OCO-、-CO-、-O-、-S―、-SO―、―SO-またはこれらの複数が連結した連結基などを挙げることができる。-COO-、-OCO-が好ましい。脂肪族基または芳香族環基と、連結基とを組み合わせてなる基の具体例としては、アルコキシカルボニル基、アシルオキシ基などが挙げられる。
 Rは、芳香族環基が好ましい。Rを芳香族環基とすることにより、より低温で、沸点の高い塩基を発生しやすくできる。発生する塩基の沸点を高くすることにより、ポストベーク時の加熱などによって揮発または分解しにくくでき、樹脂の環化をより効果的に進行させることができる。Rが1価の芳香族環基であるときの例としては、アリール基、ヘテロアリール基が挙げられ、アリール基が好ましい。
 Rが1価の脂肪族基であるときの例としては、アルキル基、アルケニル基等が挙げられる。
 アルキル基の炭素数は、1~30が好ましく、1~20がより好ましく、1~10が更に好ましい。アルキル基は直鎖、分岐、環状のいずれであってもよい。アルキル基は、置換基を有していてもよく、無置換であってもよい。アルキル基の具体例としては、メチル基、エチル基、tert-ブチル基、ドデシル基、シクロペンチル基、シクロヘキシル基、シクロヘプチル基、アダマンチル基等が挙げられる。
 アルケニル基の炭素数は、2~30が好ましく、2~20がより好ましく、2~10が更に好ましい。アルケニル基は直鎖、分岐、環状のいずれであってもよい。アルケニル基は、置換基を有していてもよく、無置換であってもよい。アルケニル基としては、ビニル基、(メタ)アリル基等が挙げられる。
 Rが2価の脂肪族基であるときの例としては、上記の1価の脂肪族基から水素原子を1個以上除いた基が挙げられる。
 芳香族環基としては、単環であってもよく、多環であってもよい。芳香族環基は、ヘテロ原子を含むヘテロ芳香族環基であってもよい。芳香族環基は、置換基を有していてもよく、無置換であってもよい。芳香族環基の具体例としては、ベンゼン環、ナフタレン環、ペンタレン環、インデン環、アズレン環、ヘプタレン環、インデセン環、ペリレン環、ペンタセン環、アセナフタレン環、フェナントレン環、アントラセン環、ナフタセン環、クリセン環、トリフェニレン環、フルオレン環、ビフェニル環、ピロール環、フラン環、チオフェン環、イミダゾール環、オキサゾール環、チアゾール環、ピリジン環、ピラジン環、ピリミジン環、ピリダジン環、インドリジン環、インドール環、ベンゾフラン環、ベンゾチオフェン環、イソベンゾフラン環、キノリジン環、キノリン環、フタラジン環、ナフチリジン環、キノキサリン環、キノキサゾリン環、イソキノリン環、カルバゾール環、フェナントリジン環、アクリジン環、フェナントロリン環、チアントレン環、クロメン環、キサンテン環、フェノキサチイン環、フェノチアジン環、および、フェナジン環が挙げられ、ベンゼン環が最も好ましい。
 芳香族環基は、複数の芳香環が、単結合または後述する連結基を介して連結していてもよい。連結基としては、例えば、-COO-、-OCO-、-CO-、-O-、-S―、-SO―、―SO-、アルキレン基(好ましくは炭素数1~10の直鎖または分岐アルキレン基)、シクロアルキレン基(好ましくは炭素数3~10のシクロアルキレン基)またはこれらの複数が連結した連結基などを挙げることができる。アルキレン基、-O-およびこれらの組み合わせからなる基が好ましく、アルキレン基と-O-との組み合わせがより好ましい。アルキレン基、シクロアルキレン基は、無置換であってもよく、置換基を有していてもよい。置換基としては、後述する置換基が挙げられる。
 複数の芳香環が、単結合または連結基を介して連結した芳香族環基の具体例としては、ビフェニル、ジフェニルメタン、ジフェニルプロパン、ジフェニルイソプロパン、トリフェニルメタン、テトラフェニルメタン、ジフェノキシメタン、ジフェノキシエタンなどが挙げられる。
 アルコキシカルボニル基の炭素数は、1~30が好ましく、1~20がより好ましく、1~10が更に好ましい。アルコキシカルボニル基は直鎖、分岐のいずれであってもよい。アルコキシカルボニル基は、置換基を有していてもよく、無置換であってもよい。
 アシルオキシ基の炭素数は、1~30が好ましく、1~20がより好ましく、1~10が更に好ましい。アシルオキシ基は直鎖、分岐のいずれであってもよい。アシルオキシ基は、置換基を有していてもよく、無置換であってもよい。
In general formula (1), R 1 represents a hydrogen atom or an n-valent organic group. Examples of the organic group include an aliphatic group, an aromatic ring group, and a group formed by combining an aliphatic group or an aromatic ring group with a linking group described later. Examples of the linking group include —COO—, —OCO—, —CO—, —O—, —S—, —SO—, —SO 2 —, or a linking group in which a plurality of these are linked. . -COO- and -OCO- are preferred. Specific examples of the group formed by combining an aliphatic group or an aromatic ring group and a linking group include an alkoxycarbonyl group and an acyloxy group.
R 1 is preferably an aromatic ring group. By making R 1 an aromatic ring group, a base having a high boiling point can be easily generated at a lower temperature. By increasing the boiling point of the generated base, it is difficult to volatilize or decompose by heating during post-baking, and the cyclization of the resin can proceed more effectively. Examples of when R 1 is a monovalent aromatic ring group include an aryl group and a heteroaryl group, and an aryl group is preferred.
Examples of when R 1 is a monovalent aliphatic group include an alkyl group and an alkenyl group.
The alkyl group preferably has 1 to 30 carbon atoms, more preferably 1 to 20 carbon atoms, and still more preferably 1 to 10 carbon atoms. The alkyl group may be linear, branched or cyclic. The alkyl group may have a substituent or may be unsubstituted. Specific examples of the alkyl group include a methyl group, an ethyl group, a tert-butyl group, a dodecyl group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, and an adamantyl group.
The alkenyl group has preferably 2 to 30 carbon atoms, more preferably 2 to 20 carbon atoms, still more preferably 2 to 10 carbon atoms. The alkenyl group may be linear, branched or cyclic. The alkenyl group may have a substituent or may be unsubstituted. Examples of the alkenyl group include a vinyl group and a (meth) allyl group.
Examples of when R 1 is a divalent aliphatic group include groups in which one or more hydrogen atoms have been removed from the above monovalent aliphatic group.
The aromatic ring group may be monocyclic or polycyclic. The aromatic ring group may be a heteroaromatic ring group containing a hetero atom. The aromatic ring group may have a substituent or may be unsubstituted. Specific examples of the aromatic ring group include benzene ring, naphthalene ring, pentalene ring, indene ring, azulene ring, heptalene ring, indecene ring, perylene ring, pentacene ring, acenaphthalene ring, phenanthrene ring, anthracene ring, naphthacene ring, Chrysene ring, triphenylene ring, fluorene ring, biphenyl ring, pyrrole ring, furan ring, thiophene ring, imidazole ring, oxazole ring, thiazole ring, pyridine ring, pyrazine ring, pyrimidine ring, pyridazine ring, indolizine ring, indole ring, benzofuran Ring, benzothiophene ring, isobenzofuran ring, quinolidine ring, quinoline ring, phthalazine ring, naphthyridine ring, quinoxaline ring, quinoxazoline ring, isoquinoline ring, carbazole ring, phenanthridine ring, acridine ring, phenanthroline ring, Antoren ring, chromene ring, xanthene ring, phenoxathiin ring, a phenothiazine ring, and include phenazine ring, a benzene ring is most preferred.
In the aromatic ring group, a plurality of aromatic rings may be linked via a single bond or a linking group described later. Examples of the linking group include —COO—, —OCO—, —CO—, —O—, —S—, —SO—, —SO 2 —, an alkylene group (preferably a straight chain having 1 to 10 carbon atoms or A branched alkylene group), a cycloalkylene group (preferably a cycloalkylene group having 3 to 10 carbon atoms), or a linking group in which a plurality of these are linked. A group consisting of an alkylene group, —O— and a combination thereof is preferred, and a combination of an alkylene group and —O— is more preferred. The alkylene group and cycloalkylene group may be unsubstituted or may have a substituent. Examples of the substituent include those described later.
Specific examples of the aromatic ring group in which a plurality of aromatic rings are linked through a single bond or a linking group include biphenyl, diphenylmethane, diphenylpropane, diphenylisopropane, triphenylmethane, tetraphenylmethane, diphenoxymethane, di Examples include phenoxyethane.
The alkoxycarbonyl group preferably has 1 to 30 carbon atoms, more preferably 1 to 20 carbon atoms, and still more preferably 1 to 10 carbon atoms. The alkoxycarbonyl group may be linear or branched. The alkoxycarbonyl group may have a substituent or may be unsubstituted.
The acyloxy group preferably has 1 to 30 carbon atoms, more preferably 1 to 20 carbon atoms, and still more preferably 1 to 10 carbon atoms. The acyloxy group may be linear or branched. The acyloxy group may have a substituent or may be unsubstituted.
 Rが表す有機基が有していてもよい置換基の例としては、例えばフッ素原子、塩素原子、臭素原子及びヨウ素原子等のハロゲン原子;メトキシ基、エトキシ基及びtert-ブトキシ基等のアルコキシ基;フェノキシ基及びp-トリルオキシ基等のアリールオキシ基;メトキシカルボニル基、tert-ブトキシカルボニル基及びフェノキシカルボニル基等のアルコキシカルボニル基;アセトキシ基、プロピオニルオキシ基及びベンゾイルオキシ基等のアシルオキシ基;アセチル基、ベンゾイル基、イソブチリル基、アクリロイル基、メタクリロイル基及びメトキサリル基等のアシル基;メチルスルファニル基及びtert-ブチルスルファニル基等のアルキルスルファニル基;フェニルスルファニル基及びp-トリルスルファニル基等のアリールスルファニル基;メチル基、エチル基、tert-ブチル基及びドデシル基等のアルキル基;シクロペンチル基、シクロヘキシル基、シクロヘプチル基、アダマンチル基等のシクロアルキル基;フェニル基、p-トリル基、キシリル基、クメニル基、ナフチル基、アンスリル基及びフェナントリル基等のアリール基;水酸基;カルボキシル基;ホルミル基;スルホ基;シアノ基;アルキルアミノカルボニル基;アリールアミノカルボニル基;スルホンアミド基;シリル基;アミノ基;モノアルキルアミノ基;ジアルキルアミノ基;アリールアミノ基;ジアリールアミノ基チオキシ基;カルバモイル基又はこれらの組み合わせが挙げられる。 Examples of the substituent that the organic group represented by R 1 may have include, for example, a halogen atom such as a fluorine atom, a chlorine atom, a bromine atom and an iodine atom; an alkoxy such as a methoxy group, an ethoxy group and a tert-butoxy group Groups; aryloxy groups such as phenoxy group and p-tolyloxy group; alkoxycarbonyl groups such as methoxycarbonyl group, tert-butoxycarbonyl group and phenoxycarbonyl group; acyloxy groups such as acetoxy group, propionyloxy group and benzoyloxy group; Groups, benzoyl groups, isobutyryl groups, acryloyl groups, methacryloyl groups and methoxalyl groups, etc .; alkylsulfanyl groups such as methylsulfanyl groups and tert-butylsulfanyl groups; phenylsulfanyl groups and p-tolylsulfanyl groups Arylsulfanyl group; alkyl group such as methyl group, ethyl group, tert-butyl group and dodecyl group; cycloalkyl group such as cyclopentyl group, cyclohexyl group, cycloheptyl group, adamantyl group; phenyl group, p-tolyl group, xylyl group , Cumenyl group, naphthyl group, anthryl group and phenanthryl group; hydroxyl group; carboxyl group; formyl group; sulfo group; cyano group; alkylaminocarbonyl group; arylaminocarbonyl group; Monoalkylamino group; dialkylamino group; arylamino group; diarylamino group thioxy group; carbamoyl group or a combination thereof.
 R~Rは、それぞれ独立に、水素原子またはアルキル基を表し、水素原子が好ましい。R~Rが水素原子で表される化合物は、より低温での加熱により、塩基を生じやすい。
 アルキル基の炭素数は、1~30が好ましく、1~20がより好ましく、1~10が更に好ましく、1~5が一層好ましく、メチル基が特に好ましい。アルキル基は直鎖、分岐のいずれであってもよく、直鎖が好ましい。アルキル基は、置換基を有していてもよく、無置換であってもよいが、無置換が好ましい。
R 2 to R 5 each independently represents a hydrogen atom or an alkyl group, preferably a hydrogen atom. A compound in which R 2 to R 5 are represented by a hydrogen atom tends to generate a base by heating at a lower temperature.
The alkyl group preferably has 1 to 30 carbon atoms, more preferably 1 to 20, more preferably 1 to 10, still more preferably 1 to 5, and particularly preferably a methyl group. The alkyl group may be linear or branched, and is preferably linear. The alkyl group may have a substituent and may be unsubstituted, but is preferably unsubstituted.
 nは1以上の整数を表し、1~5が好ましく、1~4が更に好ましく、1または2が一層好ましい。nの上限は、Rが有機基を表す場合は、有機基が取りえる置換基の最大数である。Rが水素原子を表す場合は、nは1である。 n represents an integer of 1 or more, preferably 1 to 5, more preferably 1 to 4, and still more preferably 1 or 2. The upper limit of n is the maximum number of substituents that an organic group can take when R 1 represents an organic group. In the case where R 1 represents a hydrogen atom, n is 1.
 (B)熱塩基発生剤の分子量は、100~1000が好ましい。下限は130以上がより好ましい。上限は500以下がより好ましい。なお、分子量の値は、構造式から求めた理論値である。
 (B)熱塩基発生剤は、120~250℃に加熱すると塩基を発生する化合物であることが好ましく、120~200℃で塩基を発生する化合物であることがより好ましい。塩基発生温度は、例えば、示差走査熱量測定を用い、化合物を耐圧カプセル中5℃/分で250℃まで加熱し、最も温度が低い発熱ピークのピーク温度を読み取り、ピーク温度を塩基発生温度として測定することができる。
 (B)熱塩基発生剤により発生する塩基は、環状アミンであることが好ましい。
 (B)熱塩基発生剤により発生する塩基の沸点は、80℃以上であることが好ましく、100℃以上であることが好ましく、140℃以上であることがさらに好ましい。また、発生する塩基の分子量は、80~500が好ましい。上限は400以下がより好ましい。なお、分子量の値は、構造式から求めた理論値である。
(B) The molecular weight of the thermal base generator is preferably from 100 to 1,000. The lower limit is more preferably 130 or more. The upper limit is more preferably 500 or less. The molecular weight value is a theoretical value obtained from the structural formula.
(B) The thermal base generator is preferably a compound that generates a base when heated to 120 to 250 ° C., and more preferably a compound that generates a base at 120 to 200 ° C. The base generation temperature is measured, for example, by using differential scanning calorimetry, heating the compound to 250 ° C. at 5 ° C./min in a pressure capsule, reading the peak temperature of the lowest exothermic peak, and measuring the peak temperature as the base generation temperature. can do.
(B) The base generated by the thermal base generator is preferably a cyclic amine.
(B) The boiling point of the base generated by the thermal base generator is preferably 80 ° C. or higher, preferably 100 ° C. or higher, and more preferably 140 ° C. or higher. The molecular weight of the generated base is preferably 80 to 500. The upper limit is more preferably 400 or less. The molecular weight value is a theoretical value obtained from the structural formula.
 (B)熱塩基発生剤の具体例としては、以下の化合物が例示される。本発明がこれらに限定されるものではないことは言うまでもない。 (B) Specific examples of the thermal base generator include the following compounds. Needless to say, the present invention is not limited to these examples.
Figure JPOXMLDOC01-appb-C000025
Figure JPOXMLDOC01-appb-C000025
 本発明の感光性樹脂組成物において、(B)熱塩基発生剤の含有量は、感光性樹脂組成物の全固形分100質量部に対し、0.1~25質量部が好ましい。下限は、例えば、0.5質量部以上がより好ましく、1質量部以上がさらに好ましい。上限は、例えば、20質量部以下がより好ましく、15質量部以下がさらに好ましい。このような範囲とすることにより、本発明の効果がより効果的に発揮される傾向にある。
 本発明の感光性樹脂組成物は、(B)熱塩基発生剤の含有量は、上述した(A)樹脂の100質量部に対し、0.1~25質量部が好ましい。下限は、例えば、0.5質量部以上がより好ましく、1質量部以上がさらに好ましい。上限は、例えば、20質量部以下がより好ましく、15質量部以下がさらに好ましい。このような範囲とすることにより、本発明の効果がより効果的に発揮される傾向にある。
In the photosensitive resin composition of the present invention, the content of the (B) thermal base generator is preferably 0.1 to 25 parts by mass with respect to 100 parts by mass of the total solid content of the photosensitive resin composition. For example, the lower limit is more preferably 0.5 parts by mass or more, and further preferably 1 part by mass or more. For example, the upper limit is more preferably 20 parts by mass or less, and further preferably 15 parts by mass or less. By setting it as such a range, it exists in the tendency for the effect of this invention to be exhibited more effectively.
In the photosensitive resin composition of the present invention, the content of the (B) thermal base generator is preferably 0.1 to 25 parts by mass with respect to 100 parts by mass of the above-mentioned (A) resin. For example, the lower limit is more preferably 0.5 parts by mass or more, and further preferably 1 part by mass or more. For example, the upper limit is more preferably 20 parts by mass or less, and further preferably 15 parts by mass or less. By setting it as such a range, it exists in the tendency for the effect of this invention to be exhibited more effectively.
<(C)光酸発生剤>
 本発明の感光性樹脂組成物は、光酸発生剤を含有する。光酸発生剤は、波長300nm以上、好ましくは波長300~450nmの活性光線に感応し、酸を発生する化合物が好ましいが、その化学構造に制限されるものではない。また、波長300nm以上の活性光線に直接感応しない光酸発生剤についても、増感剤と併用することによって波長300nm以上の活性光線に感応し、酸を発生する化合物であれば、増感剤と組み合わせて好ましく用いることができる。
 光酸発生剤としては、pKaが3以下の酸を発生する光酸発生剤、キノンジアジド化合物が好まし一例として挙げられる。
 pKaが3以下の酸を発生する光酸発生剤は、酸基が酸分解性基で保護された基を含有する樹脂、好ましくは、上述した一般式(2)で表される繰り返し単位を含むポリベンゾオキサゾール前駆体(第1の態様のポリベンゾオキサゾール前駆体)、および/または、一般式(3)で表される繰り返し単位を含むポリイミド前駆体(第1の態様のポリイミド前駆体)と併用することで、感度に優れた感光性樹脂組成物が得られ易い。
 また、上述した一般式(4)で表される繰り返し単位を含むポリベンゾオキサゾール前駆体(第2の態様のポリベンゾオキサゾール前駆体)、および/または、一般式(5)で表される繰り返し単位を含むポリイミド前駆体(第2の態様のポリイミド前駆体)と、後述する酸基の少なくとも一部が酸分解性基で保護された基を有する化合物とを併用することでも、感度に優れた感光性樹脂組成物が得られ易い。
 また、キノンジアジド化合物は、酸基を含有する樹脂、好ましくは、上述した一般式(4)で表される繰り返し単位を含むポリベンゾオキサゾール前駆体(第2の態様のポリベンゾオキサゾール前駆体)、および/または、一般式(5)で表される繰り返し単位を含むポリイミド前駆体(第2の態様のポリイミド前駆体)と併用することで、感度に優れた感光性樹脂組成物が得られ易い。
<(C) Photoacid generator>
The photosensitive resin composition of the present invention contains a photoacid generator. The photoacid generator is preferably a compound that reacts with actinic rays having a wavelength of 300 nm or more, preferably 300 to 450 nm, and generates an acid, but is not limited to its chemical structure. Further, a photoacid generator that is not directly sensitive to an actinic ray having a wavelength of 300 nm or more can also be used as a sensitizer if it is a compound that reacts with an actinic ray having a wavelength of 300 nm or more and generates an acid when used in combination with the sensitizer It can be preferably used in combination.
Preferred examples of the photoacid generator include a photoacid generator that generates an acid having a pKa of 3 or less, and a quinonediazide compound.
The photoacid generator that generates an acid having a pKa of 3 or less includes a resin containing a group in which an acid group is protected by an acid-decomposable group, preferably a repeating unit represented by the above general formula (2) Combined use with a polybenzoxazole precursor (polybenzoxazole precursor of the first aspect) and / or a polyimide precursor containing the repeating unit represented by the general formula (3) (polyimide precursor of the first aspect) By doing so, it is easy to obtain a photosensitive resin composition excellent in sensitivity.
Moreover, the polybenzoxazole precursor (polybenzoxazole precursor of 2nd aspect) containing the repeating unit represented by General formula (4) mentioned above, and / or the repeating unit represented by General formula (5) Sensitive photosensitivity can be obtained by using together a polyimide precursor containing polyimide (polyimide precursor of the second embodiment) and a compound having a group in which at least a part of the acid group described later is protected by an acid-decomposable group. The resin composition is easily obtained.
The quinonediazide compound is a resin containing an acid group, preferably a polybenzoxazole precursor (polybenzoxazole precursor of the second embodiment) containing the repeating unit represented by the general formula (4) described above, and / Or By using together with the polyimide precursor containing the repeating unit represented by General formula (5) (polyimide precursor of a 2nd aspect), the photosensitive resin composition excellent in the sensitivity is easy to be obtained.
<<pKaが3以下の酸を発生する光酸発生剤>>
 本発明において、pKaが3以下の酸を発生する光酸発生剤は、pKaが2以下の酸を発生するものが好ましい。なお本発明において、pKaは、基本的に25℃の水中におけるpKaを指す。水中で測定できないものは、測定に適する溶剤に変更し測定したものを指す。具体的には、化学便覧等に記載のpKaが参考にできる。pKaが3以下の酸としては、スルホン酸またはホスホン酸であることが好ましく、スルホン酸であることがより好ましい。
<< Photoacid generator that generates an acid having a pKa of 3 or less >>
In the present invention, the photoacid generator that generates an acid having a pKa of 3 or less is preferably one that generates an acid having a pKa of 2 or less. In the present invention, pKa basically refers to pKa in water at 25 ° C. Those that cannot be measured in water refer to those measured after changing to a solvent suitable for measurement. Specifically, the pKa described in the chemical handbook can be referred to. The acid having a pKa of 3 or less is preferably sulfonic acid or phosphonic acid, and more preferably sulfonic acid.
 光酸発生剤の例として、オニウム塩化合物、トリクロロメチル-s-トリアジン類、スルホニウム塩、ヨードニウム塩、第四級アンモニウム塩類、ジアゾメタン化合物、イミドスルホネート化合物、および、オキシムスルホネート化合物などを挙げることができる。これらの中でも、オニウム塩化合物、イミドスルホネート化合物、オキシムスルホネート化合物が好ましく、オニウム塩化合物、オキシムスルホネート化合物が特に好ましい。光酸発生剤は、1種単独または2種類以上を組み合わせて使用することができる。 Examples of photoacid generators include onium salt compounds, trichloromethyl-s-triazines, sulfonium salts, iodonium salts, quaternary ammonium salts, diazomethane compounds, imide sulfonate compounds, and oxime sulfonate compounds. . Among these, onium salt compounds, imide sulfonate compounds, and oxime sulfonate compounds are preferable, and onium salt compounds and oxime sulfonate compounds are particularly preferable. A photo-acid generator can be used individually by 1 type or in combination of 2 or more types.
 トリクロロメチル-s-トリアジン類、ジアリールヨードニウム塩類、トリアリールスルホニウム塩類、第四級アンモニウム塩類、およびジアゾメタン化合物の具体例としては、特開2011-221494号公報の段落番号0083~0088に記載の化合物や、特開2011-105645号公報の段落番号0013~0049に記載の化合物が例示でき、これらの内容は本願明細書に組み込まれる。
 イミドスルホネート化合物の具体例としてはWO2011/087011号公報の段落番号0065~0075に記載の化合物が例示でき、これらの内容は本願明細書に組み込まれる。
Specific examples of trichloromethyl-s-triazines, diaryliodonium salts, triarylsulfonium salts, quaternary ammonium salts, and diazomethane compounds include compounds described in paragraph numbers 0083 to 0088 of JP2011-212494A; Examples of the compounds described in JP-A-2011-105645, paragraphs 0013 to 0049, and the contents thereof are incorporated in the present specification.
Specific examples of the imidosulfonate compound include compounds described in paragraph numbers 0065 to 0075 of WO2011 / 087011, and the contents thereof are incorporated in the present specification.
 オニウム塩化合物としては、例えばジフェニルヨードニウム塩、トリアリールスルホニウム塩、スルホニウム塩、ベンゾチアゾニウム塩、テトラヒドロチオフェニウム塩等が挙げられる。 Examples of the onium salt compounds include diphenyl iodonium salts, triarylsulfonium salts, sulfonium salts, benzothiazonium salts, tetrahydrothiophenium salts, and the like.
 ジフェニルヨードニウム塩としては、例えばジフェニルヨードニウムテトラフルオロボレート、ジフェニルヨードニウムヘキサフルオロホスホネート、ジフェニルヨードニウムヘキサフルオロアルセネート、ジフェニルヨードニウムトリフルオロメタンスルホナート、ジフェニルヨードニウムトリフルオロアセテート、ジフェニルヨードニウム-p-トルエンスルホナート、ジフェニルヨードニウムブチルトリス(2,6-ジフルオロフェニル)ボレート、4-メトキシフェニルフェニルヨードニウムテトラフルオロボレート、ビス(4-t-ブチルフェニル)ヨードニウムテトラフルオロボレート、ビス(4-t-ブチルフェニル)ヨードニウムヘキサフルオロアルセネート、ビス(4-t-ブチルフェニル)ヨードニウムトリフルオロメタンスルホナート、ビス(4-t-ブチルフェニル)ヨードニウムトリフルオロアセテート、ビス(4-t-ブチルフェニル)ヨードニウム-p-トルエンスルホナート、ビス(4-t-ブチルフェニル)ヨードニウムカンファースルホン酸等が挙げられる。 Examples of the diphenyliodonium salt include diphenyliodonium tetrafluoroborate, diphenyliodonium hexafluorophosphonate, diphenyliodonium hexafluoroarsenate, diphenyliodonium trifluoromethanesulfonate, diphenyliodonium trifluoroacetate, diphenyliodonium-p-toluenesulfonate, diphenyliodonium Butyltris (2,6-difluorophenyl) borate, 4-methoxyphenylphenyliodonium tetrafluoroborate, bis (4-t-butylphenyl) iodonium tetrafluoroborate, bis (4-t-butylphenyl) iodonium hexafluoroarsenate Bis (4-tert-butylphenyl) iodonium trifluoro Tansulfonate, bis (4-tert-butylphenyl) iodonium trifluoroacetate, bis (4-tert-butylphenyl) iodonium-p-toluenesulfonate, bis (4-tert-butylphenyl) iodonium camphorsulfonic acid, etc. Can be mentioned.
 トリアリールスルホニウム塩としては、例えば、トリフェニルスルホニウムトシレート、トリフェニルスルホニウムトリフルオロメタンスルホナート、トリフェニルスルホニウムカンファースルホン酸、トリフェニルスルホニウムテトラフルオロボレート、トリフェニルスルホニウムトリフルオロアセテート、トリフェニルスルホニウム-p-トルエンスルホナート、トリフェニルスルホニウムブチルトリス(2、6-ジフルオロフェニル)ボレート等が挙げられる。また、下記構造のトリアリールスルホニウム塩類を使用することも好ましい。
Figure JPOXMLDOC01-appb-C000026
Examples of the triarylsulfonium salt include triphenylsulfonium tosylate, triphenylsulfonium trifluoromethanesulfonate, triphenylsulfonium camphorsulfonic acid, triphenylsulfonium tetrafluoroborate, triphenylsulfonium trifluoroacetate, triphenylsulfonium-p- Toluene sulfonate, triphenylsulfonium butyl tris (2,6-difluorophenyl) borate and the like can be mentioned. It is also preferable to use triarylsulfonium salts having the following structure.
Figure JPOXMLDOC01-appb-C000026
 スルホニウム塩としては、例えばアルキルスルホニウム塩、ベンジルスルホニウム塩、ジベンジルスルホニウム塩、置換ベンジルスルホニウム塩等が挙げられる。 Examples of the sulfonium salt include alkylsulfonium salts, benzylsulfonium salts, dibenzylsulfonium salts, substituted benzylsulfonium salts, and the like.
 アルキルスルホニウム塩としては、例えば4-アセトキシフェニルジメチルスルホニウムヘキサフルオロアンチモネート、4-アセトキシフェニルジメチルスルホニウムヘキサフルオロアルセネート、ジメチル-4-(ベンジルオキシカルボニルオキシ)フェニルスルホニウムヘキサフルオロアンチモネート、ジメチル-4-(ベンゾイルオキシ)フェニルスルホニウムヘキサフルオロアンチモネート、ジメチル-4-(ベンゾイルオキシ)フェニルスルホニウムヘキサフルオロアルセネート、ジメチル-3-クロロ-4-アセトキシフェニルスルホニウムヘキサフルオロアンチモネート等が挙げられる。 Examples of the alkylsulfonium salt include 4-acetoxyphenyldimethylsulfonium hexafluoroantimonate, 4-acetoxyphenyldimethylsulfonium hexafluoroarsenate, dimethyl-4- (benzyloxycarbonyloxy) phenylsulfonium hexafluoroantimonate, dimethyl-4- (Benzoyloxy) phenylsulfonium hexafluoroantimonate, dimethyl-4- (benzoyloxy) phenylsulfonium hexafluoroarsenate, dimethyl-3-chloro-4-acetoxyphenylsulfonium hexafluoroantimonate, and the like.
 ベンジルスルホニウム塩としては、例えばベンジル-4-ヒドロキシフェニルメチルスルホニウムヘキサフルオロアンチモネート、ベンジル-4-ヒドロキシフェニルメチルスルホニウムヘキサフルオロホスフェート、4-アセトキシフェニルベンジルメチルスルホニウムヘキサフルオロアンチモネート、ベンジル-4-メトキシフェニルメチルスルホニウムヘキサフルオロアンチモネート、ベンジル-2-メチル-4-ヒドロキシフェニルメチルスルホニウムヘキサフルオロアンチモネート、ベンジル-3-クロロ-4-ヒドロキシフェニルメチルスルホニウムヘキサフルオロアルセネート、4-メトキシベンジル-4-ヒドロキシフェニルメチルスルホニウムヘキサフルオロホスフェート等が挙げられる。 Examples of the benzylsulfonium salt include benzyl-4-hydroxyphenylmethylsulfonium hexafluoroantimonate, benzyl-4-hydroxyphenylmethylsulfonium hexafluorophosphate, 4-acetoxyphenylbenzylmethylsulfonium hexafluoroantimonate, benzyl-4-methoxyphenyl Methylsulfonium hexafluoroantimonate, benzyl-2-methyl-4-hydroxyphenylmethylsulfonium hexafluoroantimonate, benzyl-3-chloro-4-hydroxyphenylmethylsulfonium hexafluoroarsenate, 4-methoxybenzyl-4-hydroxyphenyl Examples include methylsulfonium hexafluorophosphate.
 ジベンジルスルホニウム塩としては、例えばジベンジル-4-ヒドロキシフェニルスルホニウムヘキサフルオロアンチモネート、ジベンジル-4-ヒドロキシフェニルスルホニウムヘキサフルオロホスフェート、4-アセトキシフェニルジベンジルスルホニウムヘキサフルオロアンチモネート、ジベンジル-4-メトキシフェニルスルホニウムヘキサフルオロアンチモネート、ジベンジル-3-クロロ-4-ヒドロキシフェニルスルホニウムヘキサフルオロアルセネート、ジベンジル-3-メチル-4-ヒドロキシ-5-t-ブチルフェニルスルホニウムヘキサフルオロアンチモネート、ベンジル-4-メトキシベンジル-4-ヒドロキシフェニルスルホニウムヘキサフルオロホスフェート等が挙げられる。 Examples of the dibenzylsulfonium salt include dibenzyl-4-hydroxyphenylsulfonium hexafluoroantimonate, dibenzyl-4-hydroxyphenylsulfonium hexafluorophosphate, 4-acetoxyphenyldibenzylsulfonium hexafluoroantimonate, dibenzyl-4-methoxyphenylsulfonium. Hexafluoroantimonate, dibenzyl-3-chloro-4-hydroxyphenylsulfonium hexafluoroarsenate, dibenzyl-3-methyl-4-hydroxy-5-t-butylphenylsulfonium hexafluoroantimonate, benzyl-4-methoxybenzyl- 4-hydroxyphenylsulfonium hexafluorophosphate and the like.
 置換ベンジルスルホニウム塩としては、例えばp-クロロベンジル-4-ヒドロキシフェニルメチルスルホニウムヘキサフルオロアンチモネート、p-ニトロベンジル-4-ヒドロキシフェニルメチルスルホニウムヘキサフルオロアンチモネート、p-クロロベンジル-4-ヒドロキシフェニルメチルスルホニウムヘキサフルオロホスフェート、p-ニトロベンジル-3-メチル-4-ヒドロキシフェニルメチルスルホニウムヘキサフルオロアンチモネート、3,5-ジクロロベンジル-4-ヒドロキシフェニルメチルスルホニウムヘキサフルオロアンチモネート、o-クロロベンジル-3-クロロ-4-ヒドロキシフェニルメチルスルホニウムヘキサフルオロアンチモネート等が挙げられる。 Examples of substituted benzylsulfonium salts include p-chlorobenzyl-4-hydroxyphenylmethylsulfonium hexafluoroantimonate, p-nitrobenzyl-4-hydroxyphenylmethylsulfonium hexafluoroantimonate, and p-chlorobenzyl-4-hydroxyphenylmethyl. Sulfonium hexafluorophosphate, p-nitrobenzyl-3-methyl-4-hydroxyphenylmethylsulfonium hexafluoroantimonate, 3,5-dichlorobenzyl-4-hydroxyphenylmethylsulfonium hexafluoroantimonate, o-chlorobenzyl-3- And chloro-4-hydroxyphenylmethylsulfonium hexafluoroantimonate.
 ベンゾチアゾニウム塩としては、例えば3-ベンジルベンゾチアゾニウムヘキサフルオロアンチモネート、3-ベンジルベンゾチアゾニウムヘキサフルオロホスフェート、3-ベンジルベンゾチアゾニウムテトラフルオロボレート、3-(p-メトキシベンジル)ベンゾチアゾニウムヘキサフルオロアンチモネート、3-ベンジル-2-メチルチオベンゾチアゾニウムヘキサフルオロアンチモネート、3-ベンジル-5-クロロベンゾチアゾニウムヘキサフルオロアンチモネート等が挙げられる。 Examples of the benzothiazonium salt include 3-benzylbenzothiazonium hexafluoroantimonate, 3-benzylbenzothiazonium hexafluorophosphate, 3-benzylbenzothiazonium tetrafluoroborate, 3- (p-methoxybenzyl) ) Benzothiazonium hexafluoroantimonate, 3-benzyl-2-methylthiobenzothiazonium hexafluoroantimonate, 3-benzyl-5-chlorobenzothiazonium hexafluoroantimonate, and the like.
 テトラヒドロチオフェニウム塩としては、例えば4,7-ジ-n-ブトキシ-1-ナフチルテトラヒドロチオフェニウムトリフルオロメタンスルホネート、1-(4-n-ブトキシナフタレン-1-イル)テトラヒドロチオフェニウムトリフルオロメタンスルホネート、1-(4-n-ブトキシナフタレン-1-イル)テトラヒドロチオフェニウムノナフルオロ-n-ブタンスルホネート、1-(4-n-ブトキシナフタレン-1-イル)テトラヒドロチオフェニウム-1,1,2,2-テトラフルオロ-2-(ノルボルナン-2-イル)エタンスルホネート、1-(4-n-ブトキシナフタレン-1-イル)テトラヒドロチオフェニウム-2-(5-t-ブトキシカルボニルオキシビシクロ[2.2.1]ヘプタン-2-イル)-1,1,2,2-テトラフルオロエタンスルホネート、1-(4-n-ブトキシナフタレン-1-イル)テトラヒドロチオフェニウム-2-(6-t-ブトキシカルボニルオキシビシクロ[2.2.1]ヘプタン-2-イル)-1,1,2,2-テトラフルオロエタンスルホネート等が挙げられる。 Examples of the tetrahydrothiophenium salt include 4,7-di-n-butoxy-1-naphthyltetrahydrothiophenium trifluoromethanesulfonate and 1- (4-n-butoxynaphthalen-1-yl) tetrahydrothiophenium trifluoromethane. Sulfonate, 1- (4-n-butoxynaphthalen-1-yl) tetrahydrothiophenium nonafluoro-n-butanesulfonate, 1- (4-n-butoxynaphthalen-1-yl) tetrahydrothiophenium-1,1 , 2,2-Tetrafluoro-2- (norbornan-2-yl) ethanesulfonate, 1- (4-n-butoxynaphthalen-1-yl) tetrahydrothiophenium-2- (5-t-butoxycarbonyloxybicyclo) [2.2.1] heptan-2-yl) -1,1 2,2-tetrafluoroethanesulfonate, 1- (4-n-butoxynaphthalen-1-yl) tetrahydrothiophenium-2- (6-t-butoxycarbonyloxybicyclo [2.2.1] heptane-2- Yl) -1,1,2,2-tetrafluoroethanesulfonate.
 オキシムスルホネート化合物、すなわち、オキシムスルホネート構造を有する化合物としては、下記一般式(B1-1)で表されるオキシムスルホネート構造を含有する化合物が好ましく例示できる。 Preferred examples of the oxime sulfonate compound, that is, a compound having an oxime sulfonate structure include compounds having an oxime sulfonate structure represented by the following general formula (B1-1).
一般式(B1-1)
Figure JPOXMLDOC01-appb-C000027
 一般式(B1-1)中、R21は、アルキル基またはアリール基を表す。波線は他の基との結合を表す。
General formula (B1-1)
Figure JPOXMLDOC01-appb-C000027
In general formula (B1-1), R 21 represents an alkyl group or an aryl group. Wavy lines represent bonds with other groups.
 一般式(B1-1)中、いずれの基も置換されてもよく、R21におけるアルキル基は直鎖状でも分岐状でも環状でもよい。許容される置換基は以下に説明する。
 R21のアルキル基としては、炭素数1~10の、直鎖状または分岐状アルキル基が好ましい。R21のアルキル基は、ハロゲン原子、炭素数6~11のアリール基、炭素数1~10のアルコキシ基、または、シクロアルキル基(7,7-ジメチル-2-オキソノルボルニル基などの有橋式脂環基を含む、好ましくはビシクロアルキル基等)で置換されてもよい。
 R21のアリール基としては、炭素数6~11のアリール基が好ましく、フェニル基またはナフチル基がより好ましい。R21のアリール基は、低級アルキル基、アルコキシ基あるいはハロゲン原子で置換されてもよい。
In general formula (B1-1), any group may be substituted, and the alkyl group in R 21 may be linear, branched or cyclic. Acceptable substituents are described below.
The alkyl group for R 21 is preferably a linear or branched alkyl group having 1 to 10 carbon atoms. The alkyl group represented by R 21 has a halogen atom, an aryl group having 6 to 11 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, or a cycloalkyl group (7,7-dimethyl-2-oxonorbornyl group). It may be substituted with a bridged alicyclic group, preferably a bicycloalkyl group or the like.
The aryl group for R 21 is preferably an aryl group having 6 to 11 carbon atoms, and more preferably a phenyl group or a naphthyl group. The aryl group of R 21 may be substituted with a lower alkyl group, an alkoxy group, or a halogen atom.
 上記一般式(B1-1)で表されるオキシムスルホネート構造を含有する上記化合物は、下記一般式(B1-2)で表されるオキシムスルホネート化合物であることも好ましい。 The above compound containing an oxime sulfonate structure represented by the above general formula (B1-1) is also preferably an oxime sulfonate compound represented by the following general formula (B1-2).
一般式(B1-2)
Figure JPOXMLDOC01-appb-C000028
 式(B1-2)中、R42は、置換されていても良いアルキル基またはアリール基を表し、Xは、アルキル基、アルコキシ基、または、ハロゲン原子を表し、m4は、0~3の整数を表し、m4が2または3であるとき、複数のXは同一でも異なっていてもよい。
General formula (B1-2)
Figure JPOXMLDOC01-appb-C000028
In the formula (B1-2), R 42 represents an optionally substituted alkyl group or aryl group, X represents an alkyl group, an alkoxy group, or a halogen atom, and m4 represents an integer of 0 to 3 And when m4 is 2 or 3, the plurality of X may be the same or different.
 R42の好ましい範囲としては、上記R21の好ましい範囲と同一である。
 Xとしてのアルキル基は、炭素数1~4の直鎖状または分岐状アルキル基が好ましい。また、Xとしてのアルコキシ基は、炭素数1~4の直鎖状または分岐状アルコキシ基が好ましい。また、Xとしてのハロゲン原子は、塩素原子またはフッ素原子が好ましい。
 m4は、0または1が好ましい。上記一般式(B2)中、m4が1であり、Xがメチル基であり、Xの置換位置がオルト位であり、R42が炭素数1~10の直鎖状アルキル基、7,7-ジメチル-2-オキソノルボルニルメチル基、またはp-トルイル基である化合物が特に好ましい。
Preferred ranges of R 42, the same as the preferable range of the R 21.
The alkyl group as X is preferably a linear or branched alkyl group having 1 to 4 carbon atoms. Further, the alkoxy group as X is preferably a linear or branched alkoxy group having 1 to 4 carbon atoms. The halogen atom as X is preferably a chlorine atom or a fluorine atom.
m4 is preferably 0 or 1. In the above general formula (B2), m4 is 1, X is a methyl group, the substitution position of X is the ortho position, R 42 is a linear alkyl group having 1 to 10 carbon atoms, 7,7- A compound that is a dimethyl-2-oxonorbornylmethyl group or a p-toluyl group is particularly preferred.
 上記一般式(B1-1)で表されるオキシムスルホネート構造を含有する化合物は、下記一般式(B1-3)で表されるオキシムスルホネート化合物であることも好ましい。 The compound containing an oxime sulfonate structure represented by the general formula (B1-1) is also preferably an oxime sulfonate compound represented by the following general formula (B1-3).
一般式(B1-3)
Figure JPOXMLDOC01-appb-C000029
 式(B1-3)中、R43は式(B1-2)におけるR42と同義であり、Xは、ハロゲン原子、水酸基、炭素数1~4のアルキル基、炭素数1~4のアルコキシ基、シアノ基またはニトロ基を表し、n4は0~5の整数を表す。
General formula (B1-3)
Figure JPOXMLDOC01-appb-C000029
In formula (B1-3), R 43 has the same meaning as R 42 in formula (B1-2), and X 1 represents a halogen atom, a hydroxyl group, an alkyl group having 1 to 4 carbon atoms, or an alkoxy group having 1 to 4 carbon atoms. Represents a group, a cyano group or a nitro group, and n4 represents an integer of 0 to 5.
 上記一般式(B1-3)におけるR43としては、メチル基、エチル基、n-プロピル基、n-ブチル基、n-オクチル基、トリフルオロメチル基、ペンタフルオロエチル基、パーフルオロ-n-プロピル基、パーフルオロ-n-ブチル基、p-トリル基、4-クロロフェニル基またはペンタフルオロフェニル基が好ましく、n-オクチル基が特に好ましい。
 Xとしては、炭素数1~5のアルコキシ基が好ましく、メトキシ基がより好ましい。
 n4としては、0~2が好ましく、0~1が特に好ましい。
 上記一般式(B1-3)で表される化合物の具体例および好ましいオキシムスルホネート化合物の具体例としては、特開2012-163937号公報の段落番号0080~0082の記載を参酌でき、この内容は本願明細書に組み込まれる。
R 43 in the above general formula (B1-3) is methyl group, ethyl group, n-propyl group, n-butyl group, n-octyl group, trifluoromethyl group, pentafluoroethyl group, perfluoro-n- A propyl group, a perfluoro-n-butyl group, a p-tolyl group, a 4-chlorophenyl group or a pentafluorophenyl group is preferable, and an n-octyl group is particularly preferable.
X 1 is preferably an alkoxy group having 1 to 5 carbon atoms, and more preferably a methoxy group.
n4 is preferably from 0 to 2, particularly preferably from 0 to 1.
As specific examples of the compound represented by the general formula (B1-3) and preferable examples of the oxime sulfonate compound, the description in paragraphs 0080 to 0082 of JP2012-163937A can be referred to, and the contents thereof are described in this application. Incorporated in the description.
 上記一般式(B1-1)で表されるオキシムスルホネート構造を含有する化合物としては、下記一般式(OS-1)で表される化合物であることも好ましい。 The compound containing an oxime sulfonate structure represented by the above general formula (B1-1) is also preferably a compound represented by the following general formula (OS-1).
Figure JPOXMLDOC01-appb-C000030
 上記一般式(OS-1)中、R101は、水素原子、アルキル基、アルケニル基、アルコキシ基、アルコキシカルボニル基、アシル基、カルバモイル基、スルファモイル基、スルホ基、シアノ基、アリール基、または、ヘテロアリール基を表す。R102は、アルキル基、または、アリール基を表す。
Figure JPOXMLDOC01-appb-C000030
In the general formula (OS-1), R 101 represents a hydrogen atom, an alkyl group, an alkenyl group, an alkoxy group, an alkoxycarbonyl group, an acyl group, a carbamoyl group, a sulfamoyl group, a sulfo group, a cyano group, an aryl group, or Represents a heteroaryl group. R 102 represents an alkyl group or an aryl group.
 X101は-O-、-S-、-NH-、-NR105-、-CH-、-CR106H-、または、-CR105107-を表し、R105~R107はアルキル基、または、アリール基を表す。
 R121~R124は、それぞれ独立に、水素原子、ハロゲン原子、アルキル基、アルケニル基、アルコキシ基、アミノ基、アルコキシカルボニル基、アルキルカルボニル基、アリールカルボニル基、アミド基、スルホ基、シアノ基、または、アリール基を表す。R121~R124のうち2つは、それぞれ互いに結合して環を形成してもよい。
 R121~R124としては、水素原子、ハロゲン原子、および、アルキル基が好ましく、また、R121~R124のうち少なくとも2つが互いに結合してアリール基を形成する態様もまた、好ましく挙げられる。中でも、R121~R124がいずれも水素原子である態様が感度の観点から好ましい。
 既述の官能基は、いずれも、さらに置換基を有していてもよい。
 上記一般式(OS-1)で表される化合物は、例えば、特開2012-163937号公報の段落番号0087~0089に記載されている一般式(OS-2)で表される化合物であることが好ましく、この内容は本願明細書に組み込まれる。
X 101 represents —O—, —S—, —NH—, —NR 105 —, —CH 2 —, —CR 106 H—, or —CR 105 R 107 —, wherein R 105 to R 107 are alkyl groups. Or an aryl group.
R 121 to R 124 each independently represents a hydrogen atom, a halogen atom, an alkyl group, an alkenyl group, an alkoxy group, an amino group, an alkoxycarbonyl group, an alkylcarbonyl group, an arylcarbonyl group, an amide group, a sulfo group, a cyano group, Or an aryl group is represented. Two of R 121 to R 124 may be bonded to each other to form a ring.
R 121 to R 124 are preferably a hydrogen atom, a halogen atom, and an alkyl group, and an embodiment in which at least two of R 121 to R 124 are bonded to each other to form an aryl group is also preferred. Among these, an embodiment in which all of R 121 to R 124 are hydrogen atoms is preferable from the viewpoint of sensitivity.
Any of the aforementioned functional groups may further have a substituent.
The compound represented by the general formula (OS-1) is, for example, a compound represented by the general formula (OS-2) described in paragraph numbers 0087 to 0089 of JP2012-163937A Which is incorporated herein by reference.
 一般式(OS-1)で表される化合物の具体例としては、特開2011-221494号公報の段落番号0128~0132に記載の化合物(例示化合物b-1~b-34)が挙げられるが、本発明はこれに限定されない。
 一般式(B1-1)で表されるオキシムスルホネート構造を含有する化合物としては、下記一般式(OS-3)、下記一般式(OS-4)または下記一般式(OS-5)で表されるオキシムスルホネート化合物であることが好ましい。
Specific examples of the compound represented by the general formula (OS-1) include the compounds described in paragraph numbers 0128 to 0132 of JP2011-221494A (exemplary compounds b-1 to b-34). However, the present invention is not limited to this.
The compound having an oxime sulfonate structure represented by the general formula (B1-1) is represented by the following general formula (OS-3), the following general formula (OS-4) or the following general formula (OS-5). An oxime sulfonate compound is preferred.
Figure JPOXMLDOC01-appb-C000031
 一般式(OS-3)~一般式(OS-5)中、R22、R25およびR28はそれぞれ独立にアルキル基、アリール基またはヘテロアリール基を表し、R23、R26およびR29はそれぞれ独立に水素原子、アルキル基、アリール基またはハロゲン原子を表し、R24、R27およびR30はそれぞれ独立にハロゲン原子、アルキル基、アルキルオキシ基、スルホン酸基、アミノスルホニル基またはアルコキシスルホニル基を表し、X~Xはそれぞれ独立に酸素原子または硫黄原子を表し、n~nはそれぞれ独立に1または2を表し、m~mはそれぞれ独立に0~6の整数を表す。
Figure JPOXMLDOC01-appb-C000031
In the general formulas (OS-3) to (OS-5), R 22 , R 25 and R 28 each independently represents an alkyl group, an aryl group or a heteroaryl group, and R 23 , R 26 and R 29 are Each independently represents a hydrogen atom, an alkyl group, an aryl group or a halogen atom, and R 24 , R 27 and R 30 each independently represent a halogen atom, an alkyl group, an alkyloxy group, a sulfonic acid group, an aminosulfonyl group or an alkoxysulfonyl group. X 1 to X 3 each independently represents an oxygen atom or a sulfur atom, n 1 to n 3 each independently represents 1 or 2, and m 1 to m 3 each independently represents an integer of 0 to 6 To express.
 上記一般式(OS-3)~(OS-5)については、例えば、特開2012-163937号公報の段落番号0098~0115の記載を参酌でき、この内容は本願明細書に組み込まれる。 Regarding the above general formulas (OS-3) to (OS-5), for example, the description of paragraph numbers 0098 to 0115 of JP2012-163937A can be referred to, and the contents thereof are incorporated in the present specification.
 また、上記一般式(B1-1)で表されるオキシムスルホネート構造を含有する化合物は、例えば、特開2012-163937号公報の段落番号0117に記載されている、一般式(OS-6)~(OS-11)のいずれかで表される化合物であることが特に好ましく、この内容は本願明細書に組み込まれる。
 上記一般式(OS-6)~(OS-11)における好ましい範囲は、特開2011-221494号公報の段落番号0110~0112に記載される(OS-6)~(OS-11)の好ましい範囲と同様であり、この内容は本願明細書に組み込まれる。
 上記一般式(OS-3)~上記一般式(OS-5)で表されるオキシムスルホネート化合物の具体例としては、特開2011-221494号公報の段落番号0114~0120に記載の化合物が挙げられ、この内容は本願明細書に組み込まれる。本発明は、これらに限定されるものではない。
In addition, the compound containing an oxime sulfonate structure represented by the above general formula (B1-1) is, for example, a compound represented by the general formula (OS-6) described in paragraph 0117 of JP2012-163937A. Particularly preferred is a compound represented by any of (OS-11), the contents of which are incorporated herein.
Preferred ranges in the above general formulas (OS-6) to (OS-11) are preferred ranges of (OS-6) to (OS-11) described in paragraph numbers 0110 to 0112 of JP2011-221494A. The contents of which are incorporated herein by reference.
Specific examples of the oxime sulfonate compound represented by the general formula (OS-3) to the general formula (OS-5) include compounds described in paragraph numbers 0114 to 0120 of JP2011-221494A. The contents of which are incorporated herein by reference. The present invention is not limited to these.
 上記一般式(B1-1)で表されるオキシムスルホネート構造を含有する化合物は、下記一般式(B1-4)で表されるオキシムスルホネート化合物であることも好ましい。 The compound containing an oxime sulfonate structure represented by the above general formula (B1-1) is also preferably an oxime sulfonate compound represented by the following general formula (B1-4).
一般式(B1-4)
Figure JPOXMLDOC01-appb-C000032
 一般式(B1-4)中、Rは、アルキル基またはアリール基を表し、Rは、アルキル基、アリール基、またはヘテロアリール基を表す。R~Rは、それぞれ、水素原子、アルキル基、アリール基、ハロゲン原子を表す。但し、RとR、RとR、またはRとRが結合して脂環または芳香環を形成してもよい。Xは、-O-またはS-を表す。
General formula (B1-4)
Figure JPOXMLDOC01-appb-C000032
In General Formula (B1-4), R 1 represents an alkyl group or an aryl group, and R 2 represents an alkyl group, an aryl group, or a heteroaryl group. R 3 to R 6 each represent a hydrogen atom, an alkyl group, an aryl group, or a halogen atom. However, R 3 and R 4 , R 4 and R 5 , or R 5 and R 6 may be bonded to form an alicyclic ring or an aromatic ring. X represents —O— or S—.
 Rは、アルキル基またはアリール基を表す。アルキル基は、分岐構造を有するアルキル基または環状構造のアルキル基が好ましい。
 アルキル基の炭素数は、好ましくは3~10である。特にアルキル基が分岐構造を有する場合、炭素数3~6のアルキル基が好ましく、環状構造を有する場合、炭素数5~7のアルキル基が好ましい。
 アルキル基としては、例えば、プロピル基、イソプロピル基、n-ブチル基、s-ブチル基、イソブチル基、tert-ブチル基、ペンチル基、イソペンチル基、ネオペンチル基、1,1-ジメチルプロピル基、ヘキシル基、2-エチルヘキシル基、シクロヘキシル基、オクチル基などが挙げられ、好ましくは、イソプロピル基、tert-ブチル基、ネオペンチル基、シクロヘキシル基である。
 アリール基の炭素数は、好ましくは6~12であり、より好ましくは6~8であり、さらに好ましくは6~7である。上記アリール基としては、フェニル基、ナフチル基などが挙げられ、好ましくは、フェニル基である。
 Rが表すアルキル基およびアリール基は、置換基を有していてもよい。置換基としては、例えばハロゲン原子(フッ素原子、クロロ原子、臭素原子、ヨウ素原子)、直鎖、分岐または環状のアルキル基(例えばメチル基、エチル基、プロピル基など)、アルケニル基、アルキニル基、アリール基、アシル基、アルコキシカルボニル基、アリールオキシカルボニル基、カルバモイル基、シアノ基、カルボキシル基、水酸基、アルコキシ基、アリールオキシ基、アルキルチオ基、アリールチオ基、ヘテロ環オキシ基、アシルオキシ基、アミノ基、ニトロ基、ヒドラジノ基、ヘテロ環基などが挙げられる。また、これらの基によってさらに置換されていてもよい。好ましくは、ハロゲン原子、メチル基である。
R 1 represents an alkyl group or an aryl group. The alkyl group is preferably a branched alkyl group or a cyclic alkyl group.
The alkyl group preferably has 3 to 10 carbon atoms. In particular, when the alkyl group has a branched structure, an alkyl group having 3 to 6 carbon atoms is preferable. When the alkyl group has a cyclic structure, an alkyl group having 5 to 7 carbon atoms is preferable.
Examples of the alkyl group include propyl group, isopropyl group, n-butyl group, s-butyl group, isobutyl group, tert-butyl group, pentyl group, isopentyl group, neopentyl group, 1,1-dimethylpropyl group, hexyl group. 2-ethylhexyl group, cyclohexyl group, octyl group and the like, preferably isopropyl group, tert-butyl group, neopentyl group, and cyclohexyl group.
The aryl group preferably has 6 to 12 carbon atoms, more preferably 6 to 8 carbon atoms, and still more preferably 6 to 7 carbon atoms. Examples of the aryl group include a phenyl group and a naphthyl group, and a phenyl group is preferable.
The alkyl group and aryl group represented by R 1 may have a substituent. Examples of the substituent include a halogen atom (a fluorine atom, a chloro atom, a bromine atom, an iodine atom), a linear, branched or cyclic alkyl group (for example, a methyl group, an ethyl group, a propyl group, etc.), an alkenyl group, an alkynyl group, Aryl group, acyl group, alkoxycarbonyl group, aryloxycarbonyl group, carbamoyl group, cyano group, carboxyl group, hydroxyl group, alkoxy group, aryloxy group, alkylthio group, arylthio group, heterocyclic oxy group, acyloxy group, amino group, A nitro group, a hydrazino group, a heterocyclic group, etc. are mentioned. Further, these groups may be further substituted. Preferably, they are a halogen atom and a methyl group.
 透明性の観点から、Rはアルキル基が好ましく、保存安定性と感度とを両立させる観点から、Rは、炭素数3~6の分岐構造を有するアルキル基、炭素数5~7の環状構造のアルキル基、または、フェニル基が好ましく、炭素数3~6の分岐構造を有するアルキル基、または炭素数5~7の環状構造のアルキル基がより好ましい。このようなかさ高い基(特に、かさ高いアルキル基)をRとして採用することにより、透明性をより向上させることが可能になる。
 かさ高い置換基の中でも、イソプロピル基、tert-ブチル基、ネオペンチル基、シクロヘキシル基が好ましく、tert-ブチル基、シクロヘキシル基がより好ましい。
From the viewpoint of transparency, R 1 is preferably an alkyl group, and from the viewpoint of achieving both storage stability and sensitivity, R 1 is an alkyl group having a branched structure having 3 to 6 carbon atoms and a cyclic group having 5 to 7 carbon atoms. An alkyl group having a structure or a phenyl group is preferable, and an alkyl group having a branched structure having 3 to 6 carbon atoms or an alkyl group having a cyclic structure having 5 to 7 carbon atoms is more preferable. By adopting such a bulky group (particularly a bulky alkyl group) as R 1 , the transparency can be further improved.
Among the bulky substituents, an isopropyl group, a tert-butyl group, a neopentyl group, and a cyclohexyl group are preferable, and a tert-butyl group and a cyclohexyl group are more preferable.
 Rは、アルキル基、アリール基、またはヘテロアリール基を表す。Rが表すアルキル基としては、炭素数1~10の、直鎖、分岐または環状のアルキル基が好ましい。上記アルキル基としては、例えば、メチル基、エチル基、プロピル基、イソプロピル基、n-ブチル基、tert-ブチル基、ペンチル基、ネオペンチル基、ヘキシル基、シクロヘキシル基などが挙げられ、好ましくは、メチル基である。
 アリール基としては、炭素数6~10のアリール基が好ましい。上記アリール基としては、フェニル基、ナフチル基、p-トルイル基(p-メチルフェニル基)などが挙げられ、好ましくは、フェニル基、p-トルイル基である。
 ヘテロアリール基としては、例えば、ピロール基、インドール基、カルバゾール基、フラン基、チオフェン基などが挙げられる。
 Rが表すアルキル基、アリール基、およびヘテロアリール基は、置換基を有していてもよい。置換基としては、Rが表すアルキル基およびアリール基が有していてもよい置換基と同義である。
 Rは、アルキル基またはアリール基が好ましく、アリール基がより好ましく、フェニル基がより好ましい。フェニル基の置換基としてはメチル基が好ましい。
R 2 represents an alkyl group, an aryl group, or a heteroaryl group. The alkyl group represented by R 2 is preferably a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms. Examples of the alkyl group include a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, a tert-butyl group, a pentyl group, a neopentyl group, a hexyl group, and a cyclohexyl group. It is a group.
As the aryl group, an aryl group having 6 to 10 carbon atoms is preferable. Examples of the aryl group include a phenyl group, a naphthyl group, a p-toluyl group (p-methylphenyl group), and a phenyl group and a p-toluyl group are preferable.
Examples of the heteroaryl group include a pyrrole group, an indole group, a carbazole group, a furan group, and a thiophene group.
The alkyl group, aryl group, and heteroaryl group represented by R 2 may have a substituent. Examples of the substituent include an alkyl group and an aryl group R 1 represents is same as the substituents which may be possessed.
R 2 is preferably an alkyl group or an aryl group, more preferably an aryl group, and more preferably a phenyl group. As the substituent for the phenyl group, a methyl group is preferred.
 R~Rは、それぞれ、水素原子、アルキル基、アリール基、またはハロゲン原子(フッ素原子、クロロ原子、臭素原子、ヨウ素原子)を表す。R~Rが表すアルキル基としては、Rが表すアルキル基と同義であり、好ましい範囲も同様である。また、R~Rが表すアリール基としては、Rが表すアリール基と同義であり、好ましい範囲も同様である。
 R~Rのうち、RとR、RとR、またはRとRが結合して環を形成してもよく、環としては、脂環または芳香環を形成していることが好ましく、ベンゼン環がより好ましい。
 R~Rは、水素原子、アルキル基、ハロゲン原子(フッ素原子、クロロ原子、臭素原子)、または、RとR、RとR、またはRとRが結合してベンゼン環を構成していることが好ましく、水素原子、メチル基、フッ素原子、クロロ原子、臭素原子またはRとR、RとR、またはRとRが結合してベンゼン環を構成していることがより好ましい。
 R~Rの好ましい態様は以下の通りである。
(態様1)少なくとも2つは水素原子である。
(態様2)アルキル基、アリール基、またはハロゲン原子の数は、1つ以下である。
(態様3)RとR、RとR、またはRとRが結合してベンゼン環を構成している。
(態様4)上記態様1と2を満たす態様、および/または、上記態様1と3を満たす態様。
R 3 to R 6 each represent a hydrogen atom, an alkyl group, an aryl group, or a halogen atom (a fluorine atom, a chloro atom, a bromine atom, or an iodine atom). The alkyl group represented by R 3 to R 6 has the same meaning as the alkyl group represented by R 2 , and the preferred range is also the same. The aryl group represented by R 3 to R 6 has the same meaning as the aryl group represented by R 1 , and the preferred range is also the same.
Among R 3 to R 6 , R 3 and R 4 , R 4 and R 5 , or R 5 and R 6 may combine to form a ring, and the ring forms an alicyclic ring or an aromatic ring. It is preferable that a benzene ring is more preferable.
R 3 to R 6 are a hydrogen atom, an alkyl group, a halogen atom (fluorine atom, chloro atom, bromine atom), or R 3 and R 4 , R 4 and R 5 , or R 5 and R 6 It preferably constitutes a benzene ring, and a hydrogen atom, a methyl group, a fluorine atom, a chloro atom, a bromine atom, or R 3 and R 4 , R 4 and R 5 , or R 5 and R 6 are bonded to form a benzene ring Is more preferable.
Preferred embodiments of R 3 to R 6 are as follows.
(Aspect 1) At least two are hydrogen atoms.
(Aspect 2) The number of alkyl groups, aryl groups, or halogen atoms is one or less.
(Aspect 3) R 3 and R 4 , R 4 and R 5 , or R 5 and R 6 are combined to form a benzene ring.
(Aspect 4) An aspect satisfying the above aspects 1 and 2 and / or an aspect satisfying the above aspects 1 and 3.
 上記一般式(B1-4)の具体例としては、以下のような化合物が挙げられるが、本発明では特にこれに限定されない。なお、例示化合物中、Tsはトシル基(p-トルエンスルホニル基)を表し、Meはメチル基を表し、Buはn-ブチル基を表し、Phはフェニル基を表す。 Specific examples of the general formula (B1-4) include the following compounds, but the present invention is not particularly limited thereto. In the exemplified compounds, Ts represents a tosyl group (p-toluenesulfonyl group), Me represents a methyl group, Bu represents an n-butyl group, and Ph represents a phenyl group.
Figure JPOXMLDOC01-appb-C000033
Figure JPOXMLDOC01-appb-C000033
 イミドスルホネート化合物としては、下記一般式(B2)で表される構造を有するイミドスルホネート化合物を好ましく用いることができる。 As the imide sulfonate compound, an imide sulfonate compound having a structure represented by the following general formula (B2) can be preferably used.
Figure JPOXMLDOC01-appb-C000034
 (一般式(B2)中、R200は、炭素原子数16以下の1価有機基を表す。波線は他の基との結合を表す。)
Figure JPOXMLDOC01-appb-C000034
(In the general formula (B2), R 200 represents a monovalent organic group having 16 or less carbon atoms. The wavy line represents a bond with another group.)
 R200は、炭素原子数16以下の1価有機基を表す。R200は、C、H、O、F以外を含まないことが好ましい。R200としては、例えば、メチル基、トリフルオロメチル基、プロピル基、フェニル基、トシル基などが挙げられる。
 一般式(B2)で表される構造を含有する化合物の好ましい態様としては、下記一般式(I)で表されるイミドスルホネート化合物である。
R 200 represents a monovalent organic group having 16 or less carbon atoms. R 200 preferably does not contain other than C, H, O, and F. Examples of R 200 include a methyl group, a trifluoromethyl group, a propyl group, a phenyl group, and a tosyl group.
A preferred embodiment of the compound containing the structure represented by the general formula (B2) is an imide sulfonate compound represented by the following general formula (I).
Figure JPOXMLDOC01-appb-C000035
 式中、RおよびRは、それぞれ、下記一般式(A)で表される基または水素原子を表す。Rは、ハロゲン原子、アルキルチオ基および脂環式炭化水素基のいずれか1つ以上で置換されてもよい炭素数1~18の脂肪族炭化水素基、ハロゲン原子、アルキルチオ基、アルキル基およびアシル基のいずれか1つ以上で置換されてもよい炭素数6~20のアリール基、ハロゲン原子および/またはアルキルチオ基で置換されてもよい炭素数7~20のアリールアルキル基、10-カンファーイル基または、下記一般式(B)で表される基を表す。
Figure JPOXMLDOC01-appb-C000035
In the formula, R 1 and R 2 each represent a group represented by the following general formula (A) or a hydrogen atom. R 3 represents an aliphatic hydrocarbon group having 1 to 18 carbon atoms which may be substituted with any one or more of a halogen atom, an alkylthio group and an alicyclic hydrocarbon group, a halogen atom, an alkylthio group, an alkyl group and an acyl An aryl group having 6 to 20 carbon atoms which may be substituted with any one or more of the groups, an arylalkyl group having 7 to 20 carbon atoms which may be substituted with a halogen atom and / or an alkylthio group, 10-camphoryl group Or represents the group represented by the following general formula (B).
Figure JPOXMLDOC01-appb-C000036
 一般式(A)中、Xは、酸素原子または硫黄原子を表し、Yは、単結合または炭素数1~4のアルキレン基を表し、Rは、炭素数1~12の炭化水素基を表し、Rは、炭素数1~4のアルキレン基を表し、Rは、水素原子、分岐していてもよい炭素数1~4のアルキル基、炭素数3~10の脂環式炭化水素基、複素環基、または水酸基を表す。nは、0~5の整数を表し、nが2~5の場合、複数存在するRは同一でも異なってもよい。
Figure JPOXMLDOC01-appb-C000036
In general formula (A), X 1 represents an oxygen atom or a sulfur atom, Y 1 represents a single bond or an alkylene group having 1 to 4 carbon atoms, and R 4 represents a hydrocarbon group having 1 to 12 carbon atoms. R 5 represents an alkylene group having 1 to 4 carbon atoms, R 6 represents a hydrogen atom, an optionally branched alkyl group having 1 to 4 carbon atoms, or an alicyclic carbon atom having 3 to 10 carbon atoms. Represents a hydrogen group, a heterocyclic group, or a hydroxyl group. n represents an integer of 0 to 5. When n is 2 to 5, a plurality of R 5 may be the same or different.
 式中、Xは、酸素原子又は硫黄原子を表し、Yは、単結合又は炭素数1~4のアルカンジイル基を表し、R11は、炭素数1~12の炭化水素基を表し、R12は、炭素数1~4のアルカンジイル基を表し、R13は、水素原子又は分岐を有してもよい炭素数1~4のアルキル基又は炭素数3~10の脂環式炭化水素基若しくは複素環基を表し、mは、0~5を表し、mが2~5の場合、複数存在するR12は同一でも異なってもよい。 In the formula, X 1 represents an oxygen atom or a sulfur atom, Y 1 represents a single bond or an alkanediyl group having 1 to 4 carbon atoms, R 11 represents a hydrocarbon group having 1 to 12 carbon atoms, R 12 represents an alkanediyl group having 1 to 4 carbon atoms, R 13 represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms which may have a branch or an alicyclic hydrocarbon having 3 to 10 carbon atoms. Represents a group or a heterocyclic group, m represents 0 to 5, and when m is 2 to 5, a plurality of R 12 may be the same or different.
Figure JPOXMLDOC01-appb-C000037
Figure JPOXMLDOC01-appb-C000037
 一般式(B)中、Yは、単結合または炭素数1~4のアルキレン基を表し、Rは、炭素数2~6のアルキレン基、炭素数2~6のハロゲン化アルキレン基、炭素数6~20のアリーレン基、または炭素数6~20のハロゲン化アリーレン基を表し、Rは、単結合、炭素数2~6のアルキレン基、炭素数2~6のハロゲン化アルキレン基、炭素数6~20のアリーレン基または炭素数6~20のハロゲン化アリーレン基を表し、Rは、分岐していてもよい炭素数1~18のアルキル基、分岐していてもよい炭素数1~18のハロゲン化アルキル基、炭素数6~20のアリール基、炭素数6~20のハロゲン化アリール基、炭素数7~20のアリールアルキル基、または炭素数7~20のハロゲン化アリールアルキル基を表す。aおよびbはそれぞれ独立に0または1を表し、aおよびbの少なくとも一方は1である。 In general formula (B), Y 2 represents a single bond or an alkylene group having 1 to 4 carbon atoms, R 7 represents an alkylene group having 2 to 6 carbon atoms, a halogenated alkylene group having 2 to 6 carbon atoms, carbon Represents an arylene group having 6 to 20 carbon atoms, or a halogenated arylene group having 6 to 20 carbon atoms, and R 8 represents a single bond, an alkylene group having 2 to 6 carbon atoms, a halogenated alkylene group having 2 to 6 carbon atoms, carbon Represents an arylene group having 6 to 20 carbon atoms or a halogenated arylene group having 6 to 20 carbon atoms, and R 9 represents an alkyl group having 1 to 18 carbon atoms which may be branched, or 1 to 1 carbon atoms which may be branched. 18 halogenated alkyl groups, aryl groups having 6 to 20 carbon atoms, halogenated aryl groups having 6 to 20 carbon atoms, arylalkyl groups having 7 to 20 carbon atoms, or halogenated arylalkyl groups having 7 to 20 carbon atoms. To express. a and b each independently represents 0 or 1, and at least one of a and b is 1.
 一般式(I)については、例えば、国際公開WO11/087011号公報の段落番号0019~0063の記載を参酌でき、この内容は本明細書に組み込まれる。一般式(I)で表される化合物としては、例えば、以下が例示できる。また、以下に例示する化合物の他にも、国際公開WO11/087011号公報の段落番号0065~0075の記載を参酌でき、この内容は本明細書に組み込まれる。 Regarding the general formula (I), for example, the description of paragraph numbers 0019 to 0063 of International Publication No. WO11 / 087011 can be referred to, and the contents thereof are incorporated in the present specification. Examples of the compound represented by the general formula (I) include the following. In addition to the compounds exemplified below, the description of paragraphs 0065 to 0075 of International Publication No. WO11 / 087011 can be referred to, the contents of which are incorporated herein.
Figure JPOXMLDOC01-appb-C000038
Figure JPOXMLDOC01-appb-C000038
<キノンジアジド化合物>
 キノンジアジド化合物としては、活性光線の照射によりカルボン酸を発生する1,2-キノンジアジド化合物を好ましく用いることができる。1,2-キノンジアジド化合物としては、フェノール性化合物またはアルコール性化合物(以下、「母核」と称する)と、1,2-ナフトキノンジアジドスルホン酸ハライドとの縮合物などを用いることができる。これらの化合物の具体例としては、例えば特開2012-088459公報の段落番号0075~0078の記載を参酌することができ、この内容は本願明細書に組み込まれる。
<Quinonediazide compound>
As the quinonediazide compound, a 1,2-quinonediazide compound that generates a carboxylic acid upon irradiation with actinic rays can be preferably used. As the 1,2-quinonediazide compound, a condensate of a phenolic compound or an alcoholic compound (hereinafter referred to as “mother nucleus”) and 1,2-naphthoquinonediazidesulfonic acid halide can be used. As specific examples of these compounds, for example, description of paragraphs 0075 to 0078 of JP2012-088459A can be referred to, and the contents thereof are incorporated in the present specification.
 フェノール性化合物またはアルコール性化合物(母核)と、1,2-ナフトキノンジアジドスルホン酸ハライドとの縮合反応においては、フェノール性化合物またはアルコール性化合物中のOH基数に対して、好ましくは30~85モル%、より好ましくは50~70モル%に相当する1,2-ナフトキノンジアジドスルホン酸ハライドを用いることができる。縮合反応は、公知の方法によって実施することができる。 In the condensation reaction of a phenolic compound or an alcoholic compound (mother nucleus) and 1,2-naphthoquinonediazidesulfonic acid halide, preferably 30 to 85 moles relative to the number of OH groups in the phenolic compound or alcoholic compound. %, More preferably 1,2-naphthoquinonediazide sulfonic acid halide corresponding to 50 to 70 mol% can be used. The condensation reaction can be carried out by a known method.
 1,2-キノンジアジド化合物としては、上記例示した母核のエステル結合をアミド結合に変更した1,2-ナフトキノンジアジドスルホン酸アミド類、例えば2,3,4-トリアミノベンゾフェノン-1,2-ナフトキノンジアジド-4-スルホン酸アミド等も好適に使用される。また、4,4’-[1-[4-[1-[4-ヒドロキシフェニル]-1-メチルエチル]フェニル]エチリデン]ビスフェノール(1.0モル)と1,2-ナフトキノンジアジド-5-スルホン酸クロリド(3.0モル)との縮合物、1,1,1-トリ(p-ヒドロキシフェニル)エタン(1.0モル)と1,2-ナフトキノンジアジド-5-スルホン酸クロリド(2.0モル)との縮合物、2,3,4,4’-テトラヒドロキシベンゾフェノン(1.0モル)と1,2-ナフトキノンジアジド-5-スルホン酸エステル(2.44モル)との縮合物などを用いてもよい。 Examples of the 1,2-quinonediazide compound include 1,2-naphthoquinonediazidesulfonic acid amides in which the ester bond of the mother nucleus exemplified above is changed to an amide bond, such as 2,3,4-triaminobenzophenone-1,2-naphtho Quinonediazide-4-sulfonic acid amide and the like are also preferably used. In addition, 4,4 ′-[1- [4- [1- [4-hydroxyphenyl] -1-methylethyl] phenyl] ethylidene] bisphenol (1.0 mol) and 1,2-naphthoquinonediazide-5-sulfone Condensate with acid chloride (3.0 mol), 1,1,1-tri (p-hydroxyphenyl) ethane (1.0 mol) and 1,2-naphthoquinonediazide-5-sulfonic acid chloride (2.0 mol) Mol)), 2,3,4,4′-tetrahydroxybenzophenone (1.0 mol) and 1,2-naphthoquinonediazide-5-sulfonic acid ester (2.44 mol), etc. It may be used.
 本発明の感光性樹脂組成物が、光酸発生剤としてpKaが3以下の酸を発生する光酸発生剤を含有する場合、pKaが3以下の酸を発生する光酸発生剤の含有量は、感光性樹脂組成物の全固形成分100質量部に対して、0.1~20質量部が好ましい。下限は、例えば、0.2質量部以上がより好ましく、0.5質量部以上がさらに好ましい。上限は、例えば、10質量部以下がより好ましく、5質量部以下がさらに好ましい。pKaが3以下の酸を発生する光酸発生剤は、1種のみを用いてもよいし、2種以上を併用することもできる。2種類以上の光酸発生剤を用いる場合は、その合計量が上記範囲となることが好ましい。
 本発明の感光性樹脂組成物が、光酸発生剤としてキノンジアジド化合物を含有する場合、キノンジアジド化合物の含有量は、感光性樹脂組成物中の全固形分100質量部に対し、1~40質量部が好ましい。下限は、例えば、2質量部以上がより好ましく、10質量部以上がさらに好ましい。上限は、例えば、35質量部以下がより好ましく、30質量部以下がさらに好ましい。キノンジアジド化合物の含有量を上記範囲とすることで、感度の良い感光性樹脂組成物が得られ易い。
When the photosensitive resin composition of the present invention contains a photoacid generator that generates an acid having a pKa of 3 or less as a photoacid generator, the content of the photoacid generator that generates an acid having a pKa of 3 or less is The amount is preferably 0.1 to 20 parts by mass with respect to 100 parts by mass of the total solid components of the photosensitive resin composition. For example, the lower limit is more preferably 0.2 parts by mass or more, and further preferably 0.5 parts by mass or more. For example, the upper limit is more preferably 10 parts by mass or less, and still more preferably 5 parts by mass or less. The photoacid generator that generates an acid having a pKa of 3 or less may be used alone or in combination of two or more. When using 2 or more types of photo-acid generators, it is preferable that the total amount becomes the said range.
When the photosensitive resin composition of the present invention contains a quinonediazide compound as a photoacid generator, the content of the quinonediazide compound is 1 to 40 parts by mass with respect to 100 parts by mass of the total solid content in the photosensitive resin composition. Is preferred. For example, the lower limit is more preferably 2 parts by mass or more, and still more preferably 10 parts by mass or more. For example, the upper limit is more preferably 35 parts by mass or less, and still more preferably 30 parts by mass or less. By setting the content of the quinonediazide compound within the above range, a sensitive photosensitive resin composition can be easily obtained.
<(D)溶剤>
 本発明の感光性樹脂組成物は、溶剤を含有する。本発明の感光性樹脂組成物は、本発明の必須成分と、さらに後述の任意の成分を溶剤に溶解した溶液として調製されることが好ましい。溶剤としては、必須成分および任意成分を溶解し、各成分と反応しないものが好ましい。
 本発明において、溶剤としては、公知の溶剤を用いることができる。
例えば、エチレングリコールモノアルキルエーテル類、エチレングリコールジアルキルエーテル類、エチレングリコールモノアルキルエーテルアセテート類、プロピレングリコールモノアルキルエーテル類、プロピレングリコールジアルキルエーテル類、プロピレングリコールモノアルキルエーテルアセテート類、ジエチレングリコールジアルキルエーテル類(例えばジエチレングリコールジエチルエーテル、ジエチレングリコールメチルエチルエーテルなど)、ジエチレングリコールモノアルキルエーテルアセテート類、ジプロピレングリコールモノアルキルエーテル類、ジプロピレングリコールジアルキルエーテル類、ジプロピレングリコールモノアルキルエーテルアセテート類、エステル類、ケトン類、アミド類、ラクトン類等が例示できる。また、特開2011-221494号公報の段落番号0174~0178に記載の溶剤、特開2012-194290公報の段落番号0167~0168に記載の溶剤も挙げられ、これらの内容は本明細書に組み込まれる。
<(D) Solvent>
The photosensitive resin composition of the present invention contains a solvent. The photosensitive resin composition of the present invention is preferably prepared as a solution in which the essential components of the present invention and further optional components described below are dissolved in a solvent. The solvent is preferably a solvent that dissolves essential components and optional components and does not react with each component.
In the present invention, a known solvent can be used as the solvent.
For example, ethylene glycol monoalkyl ethers, ethylene glycol dialkyl ethers, ethylene glycol monoalkyl ether acetates, propylene glycol monoalkyl ethers, propylene glycol dialkyl ethers, propylene glycol monoalkyl ether acetates, diethylene glycol dialkyl ethers (for example, Diethylene glycol diethyl ether, diethylene glycol methyl ethyl ether, etc.), diethylene glycol monoalkyl ether acetates, dipropylene glycol monoalkyl ethers, dipropylene glycol dialkyl ethers, dipropylene glycol monoalkyl ether acetates, esters, ketones, amides And lactones Kill. Further, the solvent described in paragraph Nos. 0174 to 0178 of JP2011-221494A and the solvent described in paragraph numbers 0167 to 0168 of JP2012-194290A are also included, and the contents thereof are incorporated in the present specification. .
 また、これらの溶剤にさらに必要に応じて、ベンジルエチルエーテル、ジヘキシルエーテル、エチレングリコールモノフェニルエーテルアセテート、ジエチレングリコールモノメチルエーテル、ジエチレングリコールモノエチルエーテル、イソホロン、カプロン酸、カプリル酸、1-オクタノール、1-ノナール、ベンジルアルコール、アニソール、酢酸ベンジル、安息香酸エチル、シュウ酸ジエチル、マレイン酸ジエチル、炭酸エチレン、炭酸プロピレン等の溶剤を添加することもできる。これら溶剤は、1種単独でまたは2種以上を混合して使用することができる。
 溶剤は、1種単独であってもよく、2種以上を用いてもよい。2種以上を用いる場合は、例えば、プロピレングリコールモノアルキルエーテルアセテート類とジアルキルエーテル類、ジアセテート類とジエチレングリコールジアルキルエーテル類、あるいは、エステル類とブチレングリコールアルキルエーテルアセテート類とを併用することがさらに好ましい。
In addition, benzyl ethyl ether, dihexyl ether, ethylene glycol monophenyl ether acetate, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, isophorone, caproic acid, caprylic acid, 1-octanol, 1-nonal as necessary for these solvents , Benzyl alcohol, anisole, benzyl acetate, ethyl benzoate, diethyl oxalate, diethyl maleate, ethylene carbonate, propylene carbonate and the like can also be added. These solvents can be used alone or in combination of two or more.
One type of solvent may be used alone, or two or more types may be used. When two or more are used, for example, it is more preferable to use propylene glycol monoalkyl ether acetates and dialkyl ethers, diacetates and diethylene glycol dialkyl ethers, or esters and butylene glycol alkyl ether acetates in combination. .
 溶剤は、沸点130℃以上160℃未満の溶剤、沸点160℃以上の溶剤、または、これらの混合物であることが好ましい。
 沸点130℃以上160℃未満の溶剤としては、プロピレングリコールモノメチルエーテルアセテート(沸点146℃)、プロピレングリコールモノエチルエーテルアセテート(沸点158℃)、プロピレングリコールメチル-n-ブチルエーテル(沸点155℃)、プロピレングリコールメチル-n-プロピルエーテル(沸点131℃)が例示できる。
 沸点160℃以上の溶剤としては、3-エトキシプロピオン酸エチル(沸点170℃)、ジエチレングリコールメチルエチルエーテル(沸点176℃)、プロピレングリコールモノメチルエーテルプロピオネート(沸点160℃)、ジプロピレングリコールメチルエーテルアセテート(沸点213℃)、3-メトキシブチルエーテルアセテート(沸点171℃)、ジエチレングリコールジエチエルエーテル(沸点189℃)、ジエチレングリコールジメチルエーテル(沸点162℃)、プロピレングリコールジアセテート(沸点190℃)、ジエチレングリコールモノエチルエーテルアセテート(沸点220℃)、ジプロピレングリコールジメチルエーテル(沸点175℃)、1,3-ブチレングリコールジアセテート(沸点232℃)が例示できる。
The solvent is preferably a solvent having a boiling point of 130 ° C. or higher and lower than 160 ° C., a solvent having a boiling point of 160 ° C. or higher, or a mixture thereof.
Solvents having a boiling point of 130 ° C. or higher and lower than 160 ° C. include propylene glycol monomethyl ether acetate (boiling point 146 ° C.), propylene glycol monoethyl ether acetate (boiling point 158 ° C.), propylene glycol methyl-n-butyl ether (boiling point 155 ° C.), propylene glycol An example is methyl-n-propyl ether (boiling point 131 ° C.).
Solvents having a boiling point of 160 ° C or higher include ethyl 3-ethoxypropionate (boiling point 170 ° C), diethylene glycol methyl ethyl ether (boiling point 176 ° C), propylene glycol monomethyl ether propionate (boiling point 160 ° C), dipropylene glycol methyl ether acetate. (Boiling point 213 ° C), 3-methoxybutyl ether acetate (boiling point 171 ° C), diethylene glycol diethyl ether (boiling point 189 ° C), diethylene glycol dimethyl ether (boiling point 162 ° C), propylene glycol diacetate (boiling point 190 ° C), diethylene glycol monoethyl ether acetate (Boiling point 220 ° C), dipropylene glycol dimethyl ether (boiling point 175 ° C), 1,3-butylene glycol diacetate (boiling point 232 ° C) It can be.
 本発明の感光性樹脂組成物における溶剤の含有量は、感光性樹脂組成物中の全成分100質量部に対し、50~95質量部であることが好ましい。下限は、60質量部以上がより好ましい。上限は、90質量部以下がより好ましい。溶剤は、1種類のみ用いてもよいし、2種類以上用いてもよい。2種類以上用いる場合は、その合計量が上記範囲となることが好ましい。 The content of the solvent in the photosensitive resin composition of the present invention is preferably 50 to 95 parts by mass with respect to 100 parts by mass of all components in the photosensitive resin composition. The lower limit is more preferably 60 parts by mass or more. The upper limit is more preferably 90 parts by mass or less. Only one type of solvent may be used, or two or more types may be used. When using 2 or more types, it is preferable that the total amount becomes the said range.
<(E)酸基の少なくとも一部が酸分解性基で保護された基を有する化合物>
 本発明の感光性樹脂組成物は、酸基の少なくとも一部が酸分解性基で保護された基を有する化合物((E)化合物ともいう)を含有することができる。
 酸基の少なくとも一部が酸分解性基で保護された基を有する化合物とは、酸基の少なくとも一部が保護基で保護されていて、酸の作用により保護基が脱離してアルカリ溶解性が増大する化合物である。(D)化合物は非露光部のアルカリ溶解性を減少させ、露光部のアルカリ溶解性を増大させる役目を担う。酸基としては、カルボキシ基またはフェノール性水酸基が好ましい。なお、本発明において(E)化合物は、(A)樹脂とは異なる化合物である。
 酸分解性基としては、酸の作用で分解する基であれば特に制限はなく、例えば、アセタール基、ケタール基、シリル基、シリルエーテル基、3級アルキルエステル基等を挙げることができ、感度の観点からアセタール基が好ましい。保護基の具体例としては、tert-ブトキシカルボニル基、イソプロポキシカルボニル基、テトラヒドロピラニル基、テトラヒドロフラニル基、エトキシエチル基、メトキシエチル基、エトキシメチル基、トリメチルシリル基、tert-ブトキシカルボニルメチル基、トリメチルシリルエーテル基などが挙げられる。感度の観点からエトキシエチル基、テトラヒドロフラニル基が好ましい。
<(E) Compound having a group in which at least part of the acid group is protected with an acid-decomposable group>
The photosensitive resin composition of the present invention can contain a compound (also referred to as (E) compound) having a group in which at least a part of the acid group is protected with an acid-decomposable group.
A compound having a group in which at least a part of the acid group is protected by an acid-decomposable group means that at least a part of the acid group is protected by a protecting group, and the protecting group is eliminated by the action of an acid to be alkali-soluble. Is a compound that increases. The compound (D) plays a role of decreasing the alkali solubility in the non-exposed area and increasing the alkali solubility in the exposed area. As the acid group, a carboxy group or a phenolic hydroxyl group is preferable. In the present invention, the compound (E) is a compound different from the resin (A).
The acid-decomposable group is not particularly limited as long as it is a group that decomposes by the action of an acid, and examples thereof include an acetal group, a ketal group, a silyl group, a silyl ether group, and a tertiary alkyl ester group. In view of the above, an acetal group is preferable. Specific examples of the protecting group include tert-butoxycarbonyl group, isopropoxycarbonyl group, tetrahydropyranyl group, tetrahydrofuranyl group, ethoxyethyl group, methoxyethyl group, ethoxymethyl group, trimethylsilyl group, tert-butoxycarbonylmethyl group, And trimethylsilyl ether group. From the viewpoint of sensitivity, an ethoxyethyl group and a tetrahydrofuranyl group are preferred.
 (E)化合物は、高分子(例えば、Mw(重量平均分子量)が5000を超える、さらには、10000を超える)であっても、低分子(例えば、5000以下)であってもよいが、低分子が好ましく、分子量は3000以下が好ましく、1000以下がより好ましい。分子量の下限値としては、150以上が好ましく、300以上がより好ましい。 The compound (E) may be a polymer (for example, Mw (weight average molecular weight) exceeding 5000 or even exceeding 10,000) or a low molecule (for example, 5000 or less). Molecules are preferable, and the molecular weight is preferably 3000 or less, and more preferably 1000 or less. As a lower limit of molecular weight, 150 or more are preferred and 300 or more are more preferred.
 (E)化合物は、溶解抑止能力向上の観点から、芳香環、複素環および脂環構造のいずれかを含むことが好ましい。また、(E)化合物は、感度向上の観点から、分子内に保護された酸基を2以上有することが好ましい。
 (E)化合物は、下記一般式(E1)で表される化合物であることが好ましい。
Figure JPOXMLDOC01-appb-C000039
 一般式(E1)中、式中、R21は、1~6価の有機基を表し、R22およびR23は、それぞれ独立に、水素原子、アルキル基またはアリール基を表し、R22およびR23のいずれか一方はアルキル基またはアリール基であり、R24は、アルキル基またはアリール基を表し、R24は、R22またはR23と結合して環状エーテルを形成していてもよく、n1は1~6の整数を表す。
(E) It is preferable that a compound contains either an aromatic ring, a heterocyclic ring, or an alicyclic structure from a viewpoint of a dissolution inhibitory ability improvement. Moreover, it is preferable that (E) compound has 2 or more of acid groups protected in the molecule | numerator from a viewpoint of a sensitivity improvement.
The compound (E) is preferably a compound represented by the following general formula (E1).
Figure JPOXMLDOC01-appb-C000039
In the general formula (E1), R 21 represents a monovalent to hexavalent organic group, R 22 and R 23 each independently represents a hydrogen atom, an alkyl group or an aryl group, and R 22 and R Any one of 23 is an alkyl group or an aryl group, R 24 represents an alkyl group or an aryl group, R 24 may be bonded to R 22 or R 23 to form a cyclic ether, and n 1 Represents an integer of 1 to 6.
 R22およびR23は、それぞれ独立に水素原子、アルキル基またはアリール基を表し、少なくともR22およびR23のいずれか一方がアルキル基またはアリール基である。
 アルキル基としては、炭素数1~10のアルキル基が好ましく、炭素数1~8のアルキル基がより好ましく、炭素数1~6のアルキル基がさらに好ましく、炭素数1~4のアルキル基が特に好ましい。アルキル基は、置換基を有していてもよい。また、アルキル基は、直鎖、分岐、環状のいずれであってもよいが、直鎖のアルキル基が好ましい。
 アリール基としては、炭素数6~20のアリール基が好ましく、炭素数6~14のアリール基がより好ましく、炭素数6~10のアリール基がさらに好ましい。アリール基は、置換基を有していてもよい。
R 22 and R 23 each independently represent a hydrogen atom, an alkyl group or an aryl group, and at least one of R 22 and R 23 is an alkyl group or an aryl group.
As the alkyl group, an alkyl group having 1 to 10 carbon atoms is preferable, an alkyl group having 1 to 8 carbon atoms is more preferable, an alkyl group having 1 to 6 carbon atoms is more preferable, and an alkyl group having 1 to 4 carbon atoms is particularly preferable. preferable. The alkyl group may have a substituent. The alkyl group may be linear, branched or cyclic, but is preferably a linear alkyl group.
As the aryl group, an aryl group having 6 to 20 carbon atoms is preferable, an aryl group having 6 to 14 carbon atoms is more preferable, and an aryl group having 6 to 10 carbon atoms is further preferable. The aryl group may have a substituent.
 R24は、アルキル基、またはアリール基を表し、R22またはR23と結合して環状エーテルを形成していてもよい。アルキル基としては、炭素数1~16のアルキル基が好ましく、炭素数1~10のアルキル基がより好ましく、炭素数1~6のアルキル基がさらに好ましく、炭素数1~4のアルキル基がさらに好ましい。アリール基としては、炭素数6~20のアリール基が好ましく、炭素数6~14のアリール基がより好ましく、炭素数6~10のアリール基がさらに好ましい。 R 24 represents an alkyl group or an aryl group, and may combine with R 22 or R 23 to form a cyclic ether. The alkyl group is preferably an alkyl group having 1 to 16 carbon atoms, more preferably an alkyl group having 1 to 10 carbon atoms, still more preferably an alkyl group having 1 to 6 carbon atoms, and further an alkyl group having 1 to 4 carbon atoms. preferable. As the aryl group, an aryl group having 6 to 20 carbon atoms is preferable, an aryl group having 6 to 14 carbon atoms is more preferable, and an aryl group having 6 to 10 carbon atoms is further preferable.
 R24は、R22またはR23と連結して環状エーテルを形成してもよい。R22またはR23と連結して形成される環状エーテルとしては、3~6員環の環状エーテルが好ましく、5~6員環の環状エーテルがより好ましい。 R 24 may be linked to R 22 or R 23 to form a cyclic ether. The cyclic ether formed by linking with R 22 or R 23 is preferably a 3- to 6-membered cyclic ether, more preferably a 5- to 6-membered cyclic ether.
 R22およびR23は、水素原子または炭素数1~4のアルキル基であることが好ましい。また、R24は、炭素数1~4のアルキル基、R22またはR23と結合してテトラヒドロフラニル基を形成していることが好ましい。 R 22 and R 23 are preferably a hydrogen atom or an alkyl group having 1 to 4 carbon atoms. R 24 is preferably bonded to an alkyl group having 1 to 4 carbon atoms, R 22 or R 23 to form a tetrahydrofuranyl group.
 R22~R24は置換基を有していても良い。置換基としては炭素数1~6のアルキル基、ハロゲン原子(フッ素原子、塩素原子、臭素原子、およびヨウ素原子)などが挙げられ、これら置換基はさらに置換基を有していてもよい。 R 22 to R 24 may have a substituent. Examples of the substituent include an alkyl group having 1 to 6 carbon atoms and a halogen atom (a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom), and these substituents may further have a substituent.
 R21は、1~6価の有機基を表す。R21は、分子量が2000以下の1~6価の有機基が好ましく、分子量が1500以下の1~6価の有機基がより好ましく、分子量が1000以下の1~6価の有機基がさらに好ましい。
 R21が表わす有機基は、芳香環または複素環を含み、C、H、O、N原子以外を含まない有機基であることが好ましく、環状構造、および/またはカルボニル基を含む有機基であることがより好ましく、芳香族基、環状脂肪族基、カルボニル基、アルキレン基、フェニレン基、および酸素原子との組み合わせからなる基であることがさらに好ましい。
 具体的に、R21としては、酸基がフェノール性ヒドロキシ基の場合、以下の有機基であることが好ましい。式中、波線は、酸素原子との結合部位を表し、RおよびRは、それぞれ独立に水素原子、炭素数1~10のアルキル基を表し、mおよびnはそれぞれ独立に0~4の整数を表す。
Figure JPOXMLDOC01-appb-C000040
R 21 represents a monovalent to hexavalent organic group. R 21 is preferably a monovalent to hexavalent organic group having a molecular weight of 2000 or less, more preferably a 1 to 6 valent organic group having a molecular weight of 1500 or less, and further preferably a 1 to 6 valent organic group having a molecular weight of 1000 or less. .
The organic group represented by R 21 is preferably an organic group containing an aromatic ring or a heterocyclic ring and containing no atoms other than C, H, O and N atoms, and is an organic group containing a cyclic structure and / or a carbonyl group. More preferred is a group comprising a combination of an aromatic group, a cycloaliphatic group, a carbonyl group, an alkylene group, a phenylene group, and an oxygen atom.
Specifically, R 21 is preferably the following organic group when the acid group is a phenolic hydroxy group. In the formula, a wavy line represents a bonding site with an oxygen atom, R 1 and R 2 each independently represent a hydrogen atom or an alkyl group having 1 to 10 carbon atoms, and m and n each independently represents 0 to 4 Represents an integer.
Figure JPOXMLDOC01-appb-C000040
 具体的に、R21としては、酸基がカルボキシ基の場合、以下の有機基であることが好ましい。式中、波線は、酸素原子との結合部位を表し、RおよびRは、それぞれ独立に水素原子、炭素数1~10のアルキル基(好ましくは炭素数1~8のアルキル基)を表し、mおよびnはそれぞれ独立に0~4の整数(好ましくは0)を表す。
Figure JPOXMLDOC01-appb-C000041
Specifically, R 21 is preferably the following organic group when the acid group is a carboxy group. In the formula, a wavy line represents a bonding site with an oxygen atom, and R 1 and R 2 each independently represent a hydrogen atom or an alkyl group having 1 to 10 carbon atoms (preferably an alkyl group having 1 to 8 carbon atoms). , M and n each independently represents an integer of 0 to 4 (preferably 0).
Figure JPOXMLDOC01-appb-C000041
 一般式(E1)で表される化合物の具体例としては、以下のような化合物が挙げられるが、本発明では特にこれに限定されない。
Figure JPOXMLDOC01-appb-C000042
Specific examples of the compound represented by the general formula (E1) include the following compounds, but the present invention is not particularly limited thereto.
Figure JPOXMLDOC01-appb-C000042
 (E)化合物は、下記一般式(E2)で表される化合物であることが好ましい。
一般式(E2)
Figure JPOXMLDOC01-appb-C000043
(一般式(E2)中、Rは、n1価の有機基を表す。Arは、置換されていてもよいアリール基を表す。aは0以上の整数を表す。n1は2以上の整数を表す。但し、n1-aは1以上の整数である。)
The compound (E) is preferably a compound represented by the following general formula (E2).
General formula (E2)
Figure JPOXMLDOC01-appb-C000043
(In General Formula (E2), R 1 represents an n1-valent organic group. Ar represents an aryl group which may be substituted. A represents an integer of 0 or more. N1 represents an integer of 2 or more. Where n1-a is an integer of 1 or more.)
 Rは、n1価の有機基を表し、好ましくは2~8価、より好ましくは2~6価の有機基である。また、Rは、炭素数2~15の炭化水素基、あるいはこの炭化水素基中に酸素原子1~2個がエーテル結合を形成している炭化水素基を主構造とする基が好ましい。具体的には、Rは、脂肪族炭化水素構造(例えば直鎖状アルキレン構造、分岐状アルキレン構造、シクロアルキレン構造、ノルボルナン構造、ノルボルネン構造、ノルボルナン骨格あるいはノルボルネン骨格とシクロアルキレン骨格が縮合した構造)、芳香族炭化水素構造(例えばベンゼン構造等)、アラルキル構造、あるいは、これらの構造が複数結合した構造、これらの構造がエーテル結合を介して複数結合した構造、その他テトラヒドロピラン構造等を含有する構造を挙げることができる。Rとしては、特に基本骨格として、アルキレン構造、脂環式構造、エーテル構造、アラルキル構造、あるいはこれらを組み合わせたものが好ましい。 R 1 represents an n1-valent organic group, preferably a divalent to octavalent organic group, more preferably a divalent to hexavalent organic group. R 1 is preferably a hydrocarbon group having 2 to 15 carbon atoms, or a group mainly having a hydrocarbon group in which 1 to 2 oxygen atoms form an ether bond in the hydrocarbon group. Specifically, R 1 represents an aliphatic hydrocarbon structure (for example, a linear alkylene structure, a branched alkylene structure, a cycloalkylene structure, a norbornane structure, a norbornene structure, a norbornane skeleton, or a structure in which a norbornene skeleton and a cycloalkylene skeleton are condensed). ), Aromatic hydrocarbon structures (such as benzene structures), aralkyl structures, structures in which these structures are combined, structures in which these structures are combined through ether bonds, and other tetrahydropyran structures The structure can be mentioned. As R 1 , an alkylene structure, an alicyclic structure, an ether structure, an aralkyl structure, or a combination thereof is particularly preferable as a basic skeleton.
 Arは、置換されていてもよいアリール基を表す。アリール基としては、炭素数6~20のアリール基が好ましく、炭素数6~14のアリール基がより好ましく、炭素数6~10のアリール基がさらに好ましい。具体的にアリール基としては、フェニル基、トルイル基、メシチル基、ナフチル基などが挙げられる。 Ar represents an optionally substituted aryl group. As the aryl group, an aryl group having 6 to 20 carbon atoms is preferable, an aryl group having 6 to 14 carbon atoms is more preferable, and an aryl group having 6 to 10 carbon atoms is further preferable. Specific examples of the aryl group include a phenyl group, a toluyl group, a mesityl group, and a naphthyl group.
 aは0以上の整数を表し、0~3の整数が好ましく、0がさらに好ましい。nは2以上の整数を表し、2~8の整数が好ましく、2~6の整数が好ましく、2がより好ましい。
 一般式(E2)で表される化合物の合成段階で、aが0~n1までの分布を有する混合物として得られることもあるが、混合物のまま好適に用いることができる。そしてn1-aは1以上、好ましくは1~7の整数である。また、Arは置換されていてもよいアリール基を表し、具体的にはフェニル基、ナフチル基等が挙げられ、その置換基としては塩素原子等のハロゲン原子;メチル基、tert-ブチル基等のアルキル基;メトキシ基等のアルコキシ基等を好ましく挙げられる。
a represents an integer of 0 or more, preferably an integer of 0 to 3, and more preferably 0. n represents an integer of 2 or more, preferably an integer of 2 to 8, more preferably an integer of 2 to 6, and more preferably 2.
In the step of synthesizing the compound represented by the general formula (E2), a may be obtained as a mixture having a distribution of 0 to n1, but the mixture can be preferably used as it is. N1-a is an integer of 1 or more, preferably 1-7. Ar represents an optionally substituted aryl group, and specific examples thereof include a phenyl group and a naphthyl group. Examples of the substituent include a halogen atom such as a chlorine atom; a methyl group, a tert-butyl group and the like. Preferred examples include alkyl groups; alkoxy groups such as methoxy groups.
 一般式(E2)で表される化合物の具体例としては、特開2001-83709号公報の段落0018~段落0025に記載の化合物を挙げることができ、これらの内容は本願明細書に組み込まれる。 Specific examples of the compound represented by the general formula (E2) include compounds described in paragraphs 0018 to 0025 of JP-A-2001-83709, the contents of which are incorporated herein.
 (E)化合物は、下記一般式(E3)で表される繰り返し単位を有する化合物であることも好ましい。
一般式(E3)
Figure JPOXMLDOC01-appb-C000044
(一般式(E3)中、R22およびR23は、それぞれ独立に水素原子、アルキル基、またはアリール基を表し、R22およびR23のいずれか一方はアルキル基、またはアリール基である。R24は、アルキル基、またはアリール基を表し、R22またはR23と結合して環状エーテルを形成していてもよい。R25は水素原子またはメチル基を表す。Xは、2価の有機基を表す。)
The compound (E) is also preferably a compound having a repeating unit represented by the following general formula (E3).
General formula (E3)
Figure JPOXMLDOC01-appb-C000044
(In General Formula (E3), R 22 and R 23 each independently represent a hydrogen atom, an alkyl group, or an aryl group, and either one of R 22 and R 23 is an alkyl group or an aryl group. 24 represents an alkyl group or an aryl group, and may combine with R 22 or R 23 to form a cyclic ether, R 25 represents a hydrogen atom or a methyl group, and X represents a divalent organic group. Represents.)
 R22~R24は、一般式(E1)におけるR22~R24と同義であり、好ましい範囲も同様である。
 Xは、2価の有機基を表す。Xが表わす2価の有機基としては、フェニレン基、カルボニル基、またはp-フェニレンカルボニル基などが挙げられる。
 一般式(E3)で表される繰り返し単位を有する化合物の好ましい具体例として、下記いずれかの構成単位を有する重合体を挙げることができる。R25は水素原子、またはメチル基を表す。
Figure JPOXMLDOC01-appb-C000045
R 22 to R 24 have the same meanings as R 22 to R 24 in formula (E1), and the preferred ranges are also the same.
X represents a divalent organic group. Examples of the divalent organic group represented by X include a phenylene group, a carbonyl group, and a p-phenylenecarbonyl group.
Preferable specific examples of the compound having a repeating unit represented by the general formula (E3) include a polymer having any one of the following structural units. R 25 represents a hydrogen atom or a methyl group.
Figure JPOXMLDOC01-appb-C000045
 一般式(E3)で表される繰り返し単位を有する化合物の重量平均分子量としては、2000~50000が好ましく、3000~20000がより好ましい。 The weight average molecular weight of the compound having a repeating unit represented by the general formula (E3) is preferably 2000 to 50000, and more preferably 3000 to 20000.
 (E)化合物として一般式(E3)で表される繰り返し単位を有する化合物を用いる場合、(A)樹脂との相溶性や現像性の観点から、その他成分を共重合させることが好ましい。その他成分としては、一般式(E3)で表される繰り返し単位を有する化合物と共重合できるものであれば特に限定されない。 When the compound having the repeating unit represented by the general formula (E3) is used as the (E) compound, it is preferable to copolymerize other components from the viewpoint of compatibility with (A) resin and developability. Other components are not particularly limited as long as they can be copolymerized with a compound having a repeating unit represented by formula (E3).
 その他成分としては、下記一般式(E4)で表される繰り返し単位を有する化合物であることが好ましい。
一般式(E4)
Figure JPOXMLDOC01-appb-C000046
(一般式(E4)中、R41は水素原子またはメチル基を表し、Xは、単結合、または2価の有機基を表し、R42は置換基を有していてもよいアリール基、またはヒドロキシル基を表す。)
The other component is preferably a compound having a repeating unit represented by the following general formula (E4).
General formula (E4)
Figure JPOXMLDOC01-appb-C000046
(In the general formula (E4), R 41 represents a hydrogen atom or a methyl group, X represents a single bond or a divalent organic group, R 42 represents an aryl group which may have a substituent, or Represents a hydroxyl group.)
 Xは、単結合、または2価の有機基を表し、Xが表わす2価の有機基としては、フェニレン基、カルボニル基、カルボキシル基、またはp-フェニレンカルボニル基などが挙げられる。
 R42は置換基を有していてもよいアリール基、またはヒドロキシル基を表し、置換基を有していてもよいアリール基としては、一般式(E1)におけるR22が表わすアリール基と同義であり、好ましい範囲も同様である。アリール基は置換基を有していてもよい。置換基としては炭素数1~6のアルキル基、ハロゲン原子(フッ素原子、塩素原子、臭素原子、およびヨウ素原子)、ヒドロキシル基などが挙げられ、これら置換基はさらに置換基を有していてもよい。
X represents a single bond or a divalent organic group. Examples of the divalent organic group represented by X include a phenylene group, a carbonyl group, a carboxyl group, and a p-phenylenecarbonyl group.
R 42 is an optionally substituted aryl group, or a hydroxyl group, a aryl group which may have a substituent group, in the general formula (E1) with the same meaning as the aryl group R 22 is represented, The preferred range is also the same. The aryl group may have a substituent. Examples of the substituent include an alkyl group having 1 to 6 carbon atoms, a halogen atom (a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom), a hydroxyl group, and the like, and these substituents may further have a substituent. Good.
 一般式(E4)で表される繰り返し単位を有する化合物の好ましい具体例として、下記いずれかの構成単位を有する重合体を挙げることができる。Rは水素原子、またはメチル基を表す。
Figure JPOXMLDOC01-appb-C000047
Preferable specific examples of the compound having a repeating unit represented by the general formula (E4) include a polymer having any one of the following structural units. R 4 represents a hydrogen atom or a methyl group.
Figure JPOXMLDOC01-appb-C000047
 一般式(E4)で表される繰り返し単位を有する化合物としては、(A)樹脂との相溶性の観点から(1)~(3)が好ましく、現像性の観点から(4)~(5)が好ましい。 The compound having a repeating unit represented by the general formula (E4) is preferably (1) to (3) from the viewpoint of compatibility with the resin (A), and (4) to (5) from the viewpoint of developability. Is preferred.
 一般式(E3)で表される繰り返し単位を有する化合物とその他の成分との比(質量%)は、(E3)成分/その他の成分=30/70~100/0が好ましく、40/60~80/20がより好ましい。その他の成分は複数を併用しても良い。 The ratio (% by mass) of the compound having a repeating unit represented by the general formula (E3) and the other components is preferably (E3) component / other components = 30/70 to 100/0, 40/60 to 80/20 is more preferable. A plurality of other components may be used in combination.
 本発明の感光性樹脂組成物が(E)化合物を含有する場合、(E)化合物の含有量は、(A)樹脂100質量部に対して、5~50質量部が好ましく、10~40質量部がより好ましい。含有量を5~50質量部とすることで、膜物性、感度を向上させることができる。また、(E)化合物は2種以上用いることができ、2種以上用いる場合は、その合計量が上記範囲となることが好ましい。 When the photosensitive resin composition of the present invention contains the compound (E), the content of the compound (E) is preferably 5 to 50 parts by weight with respect to 100 parts by weight of the resin (A), and 10 to 40 parts by weight. Part is more preferred. By setting the content to 5 to 50 parts by mass, film physical properties and sensitivity can be improved. Moreover, 2 or more types of (E) compounds can be used, and when using 2 or more types, it is preferable that the total amount becomes the said range.
<密着改良剤>
 本発明の感光性樹脂組成物は、密着改良剤を含有してもよい。密着改良剤としてはアルコキシシラン化合物などが挙げられる。アルコキシシラン化合物は、基材となる無機物、例えば、シリコン、酸化シリコン、窒化シリコン等のシリコン化合物、金、銅、モリブデン、チタン、アルミニウム等の金属と絶縁膜との密着性を向上させる化合物であることが好ましい。
 密着改良剤の具体例としては、例えば、γ-アミノプロピルトリメトキシシラン、γ-アミノプロピルトリエトキシシラン、3-グリシドキシプロピルトリメトキシシラン、γ-グリシドキシプロピルトリメトキシシランなどのγ-グリシドキシプロピルトリアルコキシシラン、γ-グリシドキシプロピルジアルコキシシラン、3-メタクリロキシプロピルメチルジメトキシシランなどのγ-メタクリロキシプロピルトリアルコキシシラン、γ-メタクリロキシプロピルジアルコキシシラン、γ-クロロプロピルトリアルコキシシラン、γ-メルカプトプロピルトリアルコキシシラン、β-(3,4-エポキシシクロヘキシル)エチルトリアルコキシシラン、ビニルトリアルコキシシランが挙げられる。これらのうち、γ-グリシドキシプロピルトリアルコキシシランやγ-メタクリロキシプロピルトリアルコキシシランが好ましく、γ-グリシドキシプロピルトリアルコキシシランがより好ましく、3-メタクリロキシプロピルメチルジメトキシシラン、3-グリシドキシプロピルトリメトキシシランがさらに好ましい。これらは1種単独または2種以上を組み合わせて使用することができる。
 密着改良剤の含有量は、感光性樹脂組成物の全固形成分100質量部に対し、0.001~15質量部であることが好ましく、0.005~10質量部であることがより好ましい。密着改良剤は、1種類のみ用いてもよいし、2種類以上用いてもよい。2種類以上用いる場合は、合計量が上記範囲となることが好ましい。
<Adhesion improver>
The photosensitive resin composition of the present invention may contain an adhesion improving agent. Examples of the adhesion improving agent include alkoxysilane compounds. The alkoxysilane compound is a compound that improves the adhesion between an insulating material and an inorganic material serving as a base material, for example, a silicon compound such as silicon, silicon oxide, or silicon nitride, or a metal such as gold, copper, molybdenum, titanium, or aluminum. It is preferable.
Specific examples of the adhesion improving agent include γ-aminopropyltrimethoxysilane, γ-aminopropyltriethoxysilane, 3-glycidoxypropyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane and the like. Γ-methacryloxypropyltrialkoxysilane such as glycidoxypropyltrialkoxysilane, γ-glycidoxypropyl dialkoxysilane, 3-methacryloxypropylmethyldimethoxysilane, γ-methacryloxypropyl dialkoxysilane, γ-chloropropyl Examples include trialkoxysilane, γ-mercaptopropyltrialkoxysilane, β- (3,4-epoxycyclohexyl) ethyltrialkoxysilane, and vinyltrialkoxysilane. Of these, γ-glycidoxypropyltrialkoxysilane and γ-methacryloxypropyltrialkoxysilane are preferred, γ-glycidoxypropyltrialkoxysilane is more preferred, 3-methacryloxypropylmethyldimethoxysilane, Sidoxypropyltrimethoxysilane is more preferred. These can be used alone or in combination of two or more.
The content of the adhesion improving agent is preferably 0.001 to 15 parts by mass and more preferably 0.005 to 10 parts by mass with respect to 100 parts by mass of the total solid component of the photosensitive resin composition. Only one type of adhesion improver may be used, or two or more types may be used. When using 2 or more types, it is preferable that a total amount becomes the said range.
<増感剤>
 本発明の感光性樹脂組成物は、増感剤を含有してもよい。増感剤は、活性光線を吸収して電子励起状態となる。電子励起状態となった増感剤は、光酸発生剤と接触して、電子移動、エネルギー移動、発熱などの作用が生じる。これにより光酸発生剤は化学変化を起こして分解し、酸を生成する。このため、増感剤を含有させることで、光酸発生剤の分解を促進させることができる。好ましい増感剤の例としては、以下の化合物類に属しており、かつ350~450nmの波長域に吸収波長を有する化合物を挙げることができる。
<Sensitizer>
The photosensitive resin composition of the present invention may contain a sensitizer. The sensitizer absorbs actinic rays and enters an electronically excited state. The sensitizer in an electronically excited state comes into contact with the photoacid generator, and effects such as electron transfer, energy transfer, and heat generation occur. Thereby, a photo-acid generator raise | generates a chemical change and decomposes | disassembles and produces | generates an acid. For this reason, decomposition | disassembly of a photo-acid generator can be accelerated | stimulated by containing a sensitizer. Examples of preferred sensitizers include compounds belonging to the following compounds and having an absorption wavelength in the wavelength region of 350 to 450 nm.
 多核芳香族類(例えば、ピレン、ペリレン、トリフェニレン、アントラセン、9,10-ジブトキシアントラセン、9,10-ジエトキシアントラセン,3,7-ジメトキシアントラセン、9,10-ジプロピルオキシアントラセン)、キサンテン類(例えば、フルオレッセイン、エオシン、エリスロシン、ローダミンB、ローズベンガル)、キサントン類(例えば、キサントン、チオキサントン、ジメチルチオキサントン、ジエチルチオキサントン)、シアニン類(例えばチアカルボシアニン、オキサカルボシアニン)、メロシアニン類(例えば、メロシアニン、カルボメロシアニン)、ローダシアニン類、オキソノール類、チアジン類(例えば、チオニン、メチレンブルー、トルイジンブルー)、アクリジン類(例えば、アクリジンオレンジ、クロロフラビン、アクリフラビン)、アクリドン類(例えば、アクリドン、10-ブチル-2-クロロアクリドン)、アントラキノン類(例えば、アントラキノン)、スクアリウム類(例えば、スクアリウム)、スチリル類、ベーススチリル類(例えば、2-[2-[4-(ジメチルアミノ)フェニル]エテニル]ベンゾオキサゾール)、クマリン類(例えば、7-ジエチルアミノ4-メチルクマリン、7-ヒドロキシ4-メチルクマリン、2,3,6,7-テトラヒドロ-9-メチル-1H,5H,11H[1]ベンゾピラノ[6,7,8-ij]キノリジン-11-ノン)。
 これら増感剤の中でも、多核芳香族類、アクリドン類、スチリル類、ベーススチリル類、クマリン類が好ましく、多核芳香族類がより好ましい。多核芳香族類の中でもアントラセン誘導体が最も好ましい。
Polynuclear aromatics (eg, pyrene, perylene, triphenylene, anthracene, 9,10-dibutoxyanthracene, 9,10-diethoxyanthracene, 3,7-dimethoxyanthracene, 9,10-dipropyloxyanthracene), xanthenes (Eg, fluorescein, eosin, erythrosine, rhodamine B, rose bengal), xanthones (eg, xanthone, thioxanthone, dimethylthioxanthone, diethylthioxanthone), cyanines (eg, thiacarbocyanine, oxacarbocyanine), merocyanines ( For example, merocyanine, carbomerocyanine), rhodocyanines, oxonols, thiazines (eg, thionine, methylene blue, toluidine blue), acridines (eg, acridine oleoresin) Di, chloroflavin, acriflavine), acridones (eg, acridone, 10-butyl-2-chloroacridone), anthraquinones (eg, anthraquinone), squaliums (eg, squalium), styryls, base styryls ( For example, 2- [2- [4- (dimethylamino) phenyl] ethenyl] benzoxazole), coumarins (for example, 7-diethylamino 4-methylcoumarin, 7-hydroxy 4-methylcoumarin, 2,3,6,7 -Tetrahydro-9-methyl-1H, 5H, 11H [1] benzopyrano [6,7,8-ij] quinolizine-11-non).
Among these sensitizers, polynuclear aromatics, acridones, styryls, base styryls, and coumarins are preferable, and polynuclear aromatics are more preferable. Of the polynuclear aromatics, anthracene derivatives are most preferred.
 本発明の感光性樹脂組成物が増感剤を含有する場合、増感剤の含有量は、感光性樹脂組成物中の全固形成分100質量部に対し、0.001~100質量部であることが好ましい。下限は、例えば、0.1質量部以上がより好ましく、0.5質量部以上がさらに好ましい。下限は、例えば、50質量部以下がより好ましく、20質量部以下がさらに好ましい。増感剤は、2種以上を併用することもできる。増感剤を2種以上併用する場合は、合計量が上記範囲となることが好ましい When the photosensitive resin composition of the present invention contains a sensitizer, the content of the sensitizer is 0.001 to 100 parts by mass with respect to 100 parts by mass of the total solid components in the photosensitive resin composition. It is preferable. For example, the lower limit is more preferably 0.1 parts by mass or more, and still more preferably 0.5 parts by mass or more. For example, the lower limit is more preferably 50 parts by mass or less, and still more preferably 20 parts by mass or less. Two or more sensitizers can be used in combination. When two or more sensitizers are used in combination, the total amount is preferably within the above range.
<架橋剤>
 本発明の感光性樹脂組成物は、架橋剤を含有してもよい。架橋剤を含有することにより、より強硬な硬化膜を得ることができる。
 架橋剤としては、熱によって架橋反応が起こるものであれば制限は無い。例えば、分子内に2個以上のエポキシ基またはオキセタニル基を有する化合物、ブロックイソシアネート化合物、アルコキシメチル基含有架橋剤、エチレン性不飽和二重結合を有する化合物等が挙げられる。エポキシ基を有する化合物が好ましい。
<Crosslinking agent>
The photosensitive resin composition of the present invention may contain a crosslinking agent. By containing a crosslinking agent, a harder cured film can be obtained.
The crosslinking agent is not limited as long as a crosslinking reaction is caused by heat. Examples thereof include compounds having two or more epoxy groups or oxetanyl groups in the molecule, blocked isocyanate compounds, alkoxymethyl group-containing crosslinking agents, compounds having ethylenically unsaturated double bonds, and the like. A compound having an epoxy group is preferred.
<<分子内に2個以上のエポキシ基またはオキセタニル基を有する化合物>>
 分子内に2個以上のエポキシ基を有する化合物としては、ビスフェノールA型エポキシ樹脂、ビスフェノールF型エポキシ樹脂、フェノールノボラック型エポキシ樹脂、クレゾールノボラック型エポキシ樹脂、脂肪族エポキシ樹脂等が挙げられる。
 これらは市販品として入手できる。例えば、JER152、JER157S70、JER157S65、JER175S70、JER806、JER828、JER1007((株)三菱ケミカルホールディングス製)など、特開2011-221494号公報の段落番号0189に記載の市販品などが挙げられる。その他にも、デナコールEX-611、EX-612、EX-614、EX-614B、EX-622、EX-512、EX-521、EX-411、EX-421、EX-313、EX-314、EX-321、EX-211、EX-212、EX-810、EX-811、EX-850、EX-851、EX-821、EX-830、EX-832、EX-841、EX-911、EX-941、EX-920、EX-931、EX-212L、EX-214L、EX-216L、EX-321L、EX-850L、DLC-201、DLC-203、DLC-204、DLC-205、DLC-206、DLC-301、DLC-402(以上ナガセケムテック製)、YH-300、YH-301、YH-302、YH-315、YH-324、YH-325(以上新日鐵化学製)などが挙げられる。これらは1種単独または2種以上を組み合わせて使用することができる。
 これらの中でも、ビスフェノールA型エポキシ樹脂、ビスフェノールF型エポキシ樹脂、フェノールノボラック型エポキシ樹脂および脂肪族エポキシ樹脂がより好ましく、ビスフェノールA型エポキシ樹脂が特に好ましい。
<< Compound having two or more epoxy groups or oxetanyl groups in the molecule >>
Examples of the compound having two or more epoxy groups in the molecule include bisphenol A type epoxy resin, bisphenol F type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, aliphatic epoxy resin and the like.
These are available as commercial products. Examples include JER152, JER157S70, JER157S65, JER175S70, JER806, JER828, JER1007 (manufactured by Mitsubishi Chemical Holdings Co., Ltd.) and other commercial products described in paragraph number 0189 of JP2011-212494. In addition, Denacol EX-611, EX-612, EX-614, EX-614B, EX-622, EX-512, EX-521, EX-411, EX-421, EX-313, EX-314, EX -321, EX-211, EX-212, EX-810, EX-811, EX-850, EX-851, EX-821, EX-830, EX-832, EX-841, EX-911, EX-941 , EX-920, EX-931, EX-212L, EX-214L, EX-216L, EX-321L, EX-850L, DLC-201, DLC-203, DLC-204, DLC-205, DLC-206, DLC -301, DLC-402 (manufactured by Nagase Chemtech), YH-300, YH-301, YH-302, YH-315, YH 324, YH-325 (or Nippon Steel Chemical Co., Ltd.) and the like. These can be used alone or in combination of two or more.
Among these, bisphenol A type epoxy resin, bisphenol F type epoxy resin, phenol novolac type epoxy resin and aliphatic epoxy resin are more preferable, and bisphenol A type epoxy resin is particularly preferable.
 分子内に2個以上のオキセタニル基を有する化合物としては、アロンオキセタンOXT-121、OXT-221、OX-SQ、PNOX(以上、東亞合成(株)製)を用いることができる。
 オキセタニル基を含む化合物は、単独使用してもよく、エポキシ基を含む化合物と混合して使用することもできる。
As the compound having two or more oxetanyl groups in the molecule, Aron oxetane OXT-121, OXT-221, OX-SQ, PNOX (above, manufactured by Toagosei Co., Ltd.) can be used.
The compound containing an oxetanyl group may be used alone or in combination with a compound containing an epoxy group.
<<ブロックイソシアネート化合物>>
 本発明の感光性樹脂組成物では、架橋剤として、ブロックイソシアネート系化合物も好ましく採用できる。ブロックイソシアネート化合物は、硬化性の観点から、1分子内に2以上のブロックイソシアネート基を有する化合物であることが好ましい。
 なお、本発明におけるブロックイソシアネート基とは、熱によりイソシアネート基を生成することが可能な基であり、例えば、ブロック剤とイソシアネート基とを反応させイソシアネート基を保護した基が好ましく例示できる。また、ブロックイソシアネート基は、90℃~250℃での加熱によりイソシアネート基を生成することが可能な基であることが好ましい。
 ブロックイソシアネート化合物は、その骨格は特に限定されるものではなく、1分子中にイソシアネート基を2個有するものであればどのようなものでもよい。例えば、脂肪族、脂環族または芳香族のポリイソシアネートが挙げられる。具体例としては、例えば、2,4-トリレンジイソシアネート、2,6-トリレンジイソシアネート、イソホロンジイソシアネート、1,6-ヘキサメチレンジイソシアネート、1,3-トリメチレンジイソシアネート、1,4-テトラメチレンジイソシアネート、2,2,4-トリメチルヘキサメチレンジイソシアネート、2,4,4-トリメチルヘキサメチレンジイソシアネート、1,9-ノナメチレンジイソシアネート、1,10-デカメチレンジイソシアネート、1,4-シクロヘキサンジイソシアネート、2,2'-ジエチルエーテルジイソシアネート、ジフェニルメタン-4,4'-ジイソシアネート、o-キシレンジイソシアネート、m-キシレンジイソシアネート、p-キシレンジイソシアネート、メチレンビス(シクロヘキシルイソシアネート)、シクロヘキサン-1,3-ジメチレンジイソシアネート、シクロヘキサン-1,4-ジメチレレンジイソシアネート、1,5-ナフタレンジイソシアネート、p-フェニレンジイソシアネート、3,3'-メチレンジトリレン-4,4'-ジイソシアネート、4,4'-ジフェニルエーテルジイソシアネート、テトラクロロフェニレンジイソシアネート、ノルボルナンジイソシアネート、水素化1,3-キシリレンジイソシアネート、水素化1,4-キシリレンジイソシアネート等のイソシアネート化合物およびこれらの化合物から派生するプレポリマー型の骨格の化合物が挙げられる。これらの中でも、トリレンジイソシアネート(TDI)やジフェニルメタンジイソシアネート(MDI)、ヘキサメチレンジイソシアネート(HDI)、イソホロンジイソシアネート(IPDI)が特に好ましい。
 ブロックイソシアネート化合物の母構造としては、ビウレット型、イソシアヌレート型、アダクト型、2官能プレポリマー型等を挙げることができる。
 ブロックイソシアネート化合物のブロック構造を形成するブロック剤としては、オキシム化合物、ラクタム化合物、フェノール化合物、アルコール化合物、アミン化合物、活性メチレン化合物、ピラゾール化合物、メルカプタン化合物、イミダゾール系化合物、イミド系化合物等を挙げることができる。これらの中でも、オキシム化合物、ラクタム化合物、フェノール化合物、アルコール化合物、アミン化合物、活性メチレン化合物、ピラゾール化合物から選ばれるブロック剤が特に好ましい。
<< Block isocyanate compound >>
In the photosensitive resin composition of the present invention, a blocked isocyanate compound can also be preferably employed as a crosslinking agent. The blocked isocyanate compound is preferably a compound having two or more blocked isocyanate groups in one molecule from the viewpoint of curability.
In addition, the blocked isocyanate group in this invention is a group which can produce | generate an isocyanate group with a heat | fever, For example, the group which reacted the blocking agent and the isocyanate group and protected the isocyanate group can illustrate preferably. The blocked isocyanate group is preferably a group capable of generating an isocyanate group by heating at 90 ° C. to 250 ° C.
The skeleton of the blocked isocyanate compound is not particularly limited, and any skeleton may be used as long as it has two isocyanate groups in one molecule. For example, aliphatic, alicyclic or aromatic polyisocyanate can be mentioned. Specific examples include 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, isophorone diisocyanate, 1,6-hexamethylene diisocyanate, 1,3-trimethylene diisocyanate, 1,4-tetramethylene diisocyanate, 2,2,4-trimethylhexamethylene diisocyanate, 2,4,4-trimethylhexamethylene diisocyanate, 1,9-nonamethylene diisocyanate, 1,10-decamethylene diisocyanate, 1,4-cyclohexane diisocyanate, 2,2'- Diethyl ether diisocyanate, diphenylmethane-4,4′-diisocyanate, o-xylene diisocyanate, m-xylene diisocyanate, p-xylene diisocyanate, methylene bis (cyclohexane Isocyanate), cyclohexane-1,3-dimethylene diisocyanate, cyclohexane-1,4-dimethylene diisocyanate, 1,5-naphthalene diisocyanate, p-phenylene diisocyanate, 3,3'-methylene ditolylene-4,4'- Diisocyanate, 4,4'-diphenyl ether diisocyanate, tetrachlorophenylene diisocyanate, norbornane diisocyanate, hydrogenated 1,3-xylylene diisocyanate, hydrogenated 1,4-xylylene diisocyanate and other isocyanate compounds and prepolymers derived from these compounds Type skeleton compounds. Among these, tolylene diisocyanate (TDI), diphenylmethane diisocyanate (MDI), hexamethylene diisocyanate (HDI), and isophorone diisocyanate (IPDI) are particularly preferable.
Examples of the matrix structure of the blocked isocyanate compound include biuret type, isocyanurate type, adduct type, and bifunctional prepolymer type.
Examples of the blocking agent that forms the block structure of the blocked isocyanate compound include an oxime compound, a lactam compound, a phenol compound, an alcohol compound, an amine compound, an active methylene compound, a pyrazole compound, a mercaptan compound, an imidazole compound, and an imide compound. Can do. Among these, a blocking agent selected from oxime compounds, lactam compounds, phenol compounds, alcohol compounds, amine compounds, active methylene compounds, and pyrazole compounds is particularly preferable.
 オキシム化合物としては、オキシム、および、ケトオキシムが挙げられ、具体的には、アセトキシム、ホルムアルドキシム、シクロヘキサンオキシム、メチルエチルケトンオキシム、シクロヘキサノンオキシム、ベンゾフェノンオキシム、アセトキシム等が例示できる。
 ラクタム化合物としてはε-カプロラクタム、γ-ブチロラクタム等が例示できる。
 フェノール化合物としては、フェノール、ナフトール、クレゾール、キシレノール、ハロゲン置換フェノール等が例示できる。
 アルコール化合物としては、メタノール、エタノール、プロパノール、ブタノール、シクロヘキサノール、エチレングリコールモノアルキルエーテル、プロピレングリコールモノアルキルエーテル、乳酸アルキル等が例示できる。
 アミン化合物としては、1級アミンおよび2級アミンが上げられ、芳香族アミン、脂肪族アミン、脂環族アミンいずれでもよく、アニリン、ジフェニルアミン、エチレンイミン、ポリエチレンイミン等が例示できる。
 活性メチレン化合物としては、マロン酸ジエチル、マロン酸ジメチル、アセト酢酸エチル、アセト酢酸メチル等が例示できる。
 ピラゾール化合物としては、ピラゾール、メチルピラゾール、ジメチルピラゾール等が例示できる。
 メルカプタン化合物としては、アルキルメルカプタン、アリールメルカプタン等が例示できる。
Examples of the oxime compound include oxime and ketoxime, and specific examples include acetoxime, formaldoxime, cyclohexane oxime, methyl ethyl ketone oxime, cyclohexanone oxime, benzophenone oxime, and acetoxime.
Examples of the lactam compound include ε-caprolactam and γ-butyrolactam.
Examples of the phenol compound include phenol, naphthol, cresol, xylenol, and halogen-substituted phenol.
Examples of the alcohol compound include methanol, ethanol, propanol, butanol, cyclohexanol, ethylene glycol monoalkyl ether, propylene glycol monoalkyl ether, alkyl lactate and the like.
Examples of the amine compound include primary amines and secondary amines, which may be aromatic amines, aliphatic amines, and alicyclic amines, and examples thereof include aniline, diphenylamine, ethyleneimine, and polyethyleneimine.
Examples of the active methylene compound include diethyl malonate, dimethyl malonate, ethyl acetoacetate, methyl acetoacetate and the like.
Examples of the pyrazole compound include pyrazole, methylpyrazole, dimethylpyrazole and the like.
Examples of mercaptan compounds include alkyl mercaptans and aryl mercaptans.
 ブロックイソシアネート化合物は、市販品として入手可能であり、例えば、コロネートAPステーブルM、コロネート2503、2515、2507、2513、2555、ミリオネートMS-50(以上、日本ポリウレタン工業(株)製)、タケネートB-830、B-815N、B-820NSU、B-842N、B-846N、B-870N、B-874N、B-882N(以上、三井化学(株)製)、デュラネート17B-60PX、17B-60P、TPA-B80X、TPA-B80E、MF-B60X、MF-B60B、MF-K60X、MF-K60B、MFA-100、E402-B80B、SBN-70D、SBB-70P、K6000(以上、旭化成ケミカルズ(株)製)、デスモジュールBL1100、BL1265 MPA/X、BL3575/1、BL3272MPA、BL3370MPA、BL3475BA/SN、BL5375MPA、VPLS2078/2、BL4265SN、PL340、PL350、スミジュールBL3175(以上、住化バイエルウレタン(株)製)等を好ましく使用することができる。 The blocked isocyanate compound is available as a commercial product. For example, Coronate AP Stable M, Coronate 2503, 2515, 2507, 2513, 2555, Millionate MS-50 (above, manufactured by Nippon Polyurethane Industry Co., Ltd.), Takenate B -830, B-815N, B-820NSU, B-842N, B-846N, B-870N, B-874N, B-882N (manufactured by Mitsui Chemicals, Inc.), Duranate 17B-60PX, 17B-60P, TPA-B80X, TPA-B80E, MF-B60X, MF-B60B, MF-K60X, MF-K60B, MFA-100, E402-B80B, SBN-70D, SBB-70P, K6000 (above, manufactured by Asahi Kasei Chemicals Corporation) ), Death Module BL1100, BL12 5 MPA / X, BL3575 / 1, BL3272MPA, BL3370MPA, BL3475BA / SN, BL5375MPA, VPLS2078 / 2, BL4265SN, PL340, PL350, Sumijour BL3175 (above, manufactured by Sumika Bayer Urethane Co., Ltd.) and the like are preferably used. Can do.
<<その他架橋剤>>
 その他の架橋剤としては、特開2012-8223号公報の段落番号0107~0108に記載のアルコキシメチル基含有架橋剤、エチレン性不飽和二重結合を有する化合物なども好ましく用いることができ、これらの内容は本願明細書に組み込まれる。アルコキシメチル基含有架橋剤としては、アルコキシメチル化グリコールウリルが好ましい。
<< Other cross-linking agent >>
As other crosslinking agents, alkoxymethyl group-containing crosslinking agents described in paragraph numbers 0107 to 0108 of JP2012-8223A, compounds having an ethylenically unsaturated double bond, and the like can be preferably used. The contents are incorporated herein. As the alkoxymethyl group-containing crosslinking agent, alkoxymethylated glycoluril is preferable.
 本発明の感光性樹脂組成物が架橋剤を有する場合、架橋剤の含有量は、上記(A)重合体成分の合計100質量部に対し、0.01~50質量部であることが好ましい。下限は、例えば、0.1質量部以上がより好ましく、0.5質量部以上がさらに好ましい。上限は、例えば、30質量部以下がより好ましく、20質量部以下がさらに好ましい。この範囲であれば、機械的強度および耐溶剤性に優れた硬化膜が得られる。架橋剤は1種類のみ用いてもよいし、2種類以上用いてもよい。2種類以上用いる場合は、その合計量が上記範囲となることが好ましい。 In the case where the photosensitive resin composition of the present invention has a crosslinking agent, the content of the crosslinking agent is preferably 0.01 to 50 parts by mass with respect to 100 parts by mass in total of the polymer component (A). For example, the lower limit is more preferably 0.1 parts by mass or more, and still more preferably 0.5 parts by mass or more. For example, the upper limit is more preferably 30 parts by mass or less, and still more preferably 20 parts by mass or less. If it is this range, the cured film excellent in mechanical strength and solvent resistance will be obtained. Only one type of crosslinking agent may be used, or two or more types may be used. When using 2 or more types, it is preferable that the total amount becomes the said range.
<塩基性化合物>
 本発明の感光性樹脂組成物は、塩基性化合物を含有してもよい。塩基性化合物としては、化学増幅型ポジ型感光性樹脂組成物で用いられるものの中から任意に選択して使用することができる。例えば、脂肪族アミン、芳香族アミン、複素環式アミン、第四級アンモニウムヒドロキシド、カルボン酸の第四級アンモニウム塩等が挙げられる。これらの具体例としては、特開2011-221494号公報の段落番号0204~0207に記載の化合物が挙げられ、これらの内容は本願明細書に組み込まれる。
<Basic compound>
The photosensitive resin composition of the present invention may contain a basic compound. The basic compound can be arbitrarily selected from those used in the chemically amplified positive photosensitive resin composition. Examples include aliphatic amines, aromatic amines, heterocyclic amines, quaternary ammonium hydroxides, quaternary ammonium salts of carboxylic acids, and the like. Specific examples thereof include compounds described in JP-A 2011-212494, paragraphs 0204 to 0207, the contents of which are incorporated herein.
 具体的には、脂肪族アミンとしては、例えば、トリメチルアミン、ジエチルアミン、トリエチルアミン、ジ-n-プロピルアミン、トリ-n-プロピルアミン、ジ-n-ペンチルアミン、トリ-n-ペンチルアミン、ジエタノールアミン、トリエタノールアミン、ジシクロヘキシルアミン、ジシクロヘキシルメチルアミンなどが挙げられる。
 芳香族アミンとしては、例えば、アニリン、ベンジルアミン、N,N-ジメチルアニリン、ジフェニルアミンなどが挙げられる。
 複素環式アミンとしては、例えば、ピリジン、2-メチルピリジン、4-メチルピリジン、2-エチルピリジン、4-エチルピリジン、2-フェニルピリジン、4-フェニルピリジン、N-メチル-4-フェニルピリジン、4-ジメチルアミノピリジン、イミダゾール、ベンズイミダゾール、4-メチルイミダゾール、2-フェニルベンズイミダゾール、2,4,5-トリフェニルイミダゾール、ニコチン、ニコチン酸、ニコチン酸アミド、キノリン、8-オキシキノリン、ピラジン、ピラゾール、ピリダジン、プリン、ピロリジン、ピペリジン、ピペラジン、モルホリン、4-メチルモルホリン、N-シクロヘキシル-N’-[2-(4-モルホリニル)エチル]チオ尿素、1,5-ジアザビシクロ[4.3.0]-5-ノネン、1,8-ジアザビシクロ[5.3.0]-7-ウンデセンなどが挙げられる。
 第四級アンモニウムヒドロキシドとしては、例えば、テトラメチルアンモニウムヒドロキシド、テトラエチルアンモニウムヒドロキシド、テトラプロピルアンモニウムヒドロキシド、ベンジルトリメチルアンモニウムヒドロキシド、テトラ-n-ブチルアンモニウムヒドロキシド、テトラ-n-ヘキシルアンモニウムヒドロキシドなどが挙げられる。
 カルボン酸の第四級アンモニウム塩としては、例えば、テトラメチルアンモニウムアセテート、テトラメチルアンモニウムベンゾエート、テトラ-n-ブチルアンモニウムアセテート、テトラ-n-ブチルアンモニウムベンゾエートなどが挙げられる。
Specific examples of the aliphatic amine include trimethylamine, diethylamine, triethylamine, di-n-propylamine, tri-n-propylamine, di-n-pentylamine, tri-n-pentylamine, diethanolamine, triethanolamine, and the like. Examples include ethanolamine, dicyclohexylamine, and dicyclohexylmethylamine.
Examples of the aromatic amine include aniline, benzylamine, N, N-dimethylaniline, diphenylamine and the like.
Examples of the heterocyclic amine include pyridine, 2-methylpyridine, 4-methylpyridine, 2-ethylpyridine, 4-ethylpyridine, 2-phenylpyridine, 4-phenylpyridine, N-methyl-4-phenylpyridine, 4-dimethylaminopyridine, imidazole, benzimidazole, 4-methylimidazole, 2-phenylbenzimidazole, 2,4,5-triphenylimidazole, nicotine, nicotinic acid, nicotinamide, quinoline, 8-oxyquinoline, pyrazine, Pyrazole, pyridazine, purine, pyrrolidine, piperidine, piperazine, morpholine, 4-methylmorpholine, N-cyclohexyl-N ′-[2- (4-morpholinyl) ethyl] thiourea, 1,5-diazabicyclo [4.3.0 ] -5-Nonene, 1,8-di And azabicyclo [5.3.0] -7-undecene.
Examples of the quaternary ammonium hydroxide include tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, benzyltrimethylammonium hydroxide, tetra-n-butylammonium hydroxide, and tetra-n-hexylammonium hydroxide. And so on.
Examples of the quaternary ammonium salt of carboxylic acid include tetramethylammonium acetate, tetramethylammonium benzoate, tetra-n-butylammonium acetate, tetra-n-butylammonium benzoate and the like.
 本発明の感光性樹脂組成物が塩基性化合物を有する場合、塩基性化合物の含有量は、感光性樹脂組成物中の全固形成分100質量部に対し、0.001~3質量部であることが好ましく、0.005~1質量部であることがより好ましい。塩基性化合物は、1種単独で使用しても、2種以上を併用してもよい。2種類以上用いる場合は、その合計量が上記範囲となることが好ましい。 When the photosensitive resin composition of the present invention has a basic compound, the content of the basic compound is 0.001 to 3 parts by mass with respect to 100 parts by mass of the total solid components in the photosensitive resin composition. Is more preferable, and 0.005 to 1 part by mass is more preferable. A basic compound may be used individually by 1 type, or may use 2 or more types together. When using 2 or more types, it is preferable that the total amount becomes the said range.
<界面活性剤>
 本発明の感光性樹脂組成物は、界面活性剤を含有してもよい。界面活性剤としては、アニオン系、カチオン系、ノニオン系、または、両性のいずれでも使用することができるが、好ましい界面活性剤はノニオン界面活性剤である。界面活性剤は、例えば、特開2012-88459号公報の段落番号0201~0205に記載のものや、特開2011-215580号公報の段落番号0185~0188に記載のものを用いることができ、これらの記載は本願明細書に組み込まれる。
 ノニオン系界面活性剤の例としては、ポリオキシエチレン高級アルキルエーテル類、ポリオキシエチレン高級アルキルフェニルエーテル類、ポリオキシエチレングリコールの高級脂肪酸ジエステル類、シリコーン系、フッ素系界面活性剤を挙げることができる。また、以下商品名で、KP-341、X-22-822(信越化学工業(株)製)、ポリフローNo.99C(共栄社化学(株)製)、エフトップ(三菱マテリアル化成社製)、メガファック(DIC(株)製)、F-554(DIC(株)製)、フロラードノベックFC-4430(住友スリーエム(株)製)、サーフロンS-242(AGCセイミケミカル社製)、PolyFoxPF-6320(OMNOVA社製)、SH-8400(東レ・ダウコーニングシリコーン)、フタージェントFTX-218G(ネオス社製)等を挙げることができる。
 また、界面活性剤として、下記一般式(I-1-1)で表される構成単位Aおよび構成単位Bを含み、テトラヒドロフラン(THF)を溶媒とした場合のゲルパーミエーションクロマトグラフィーで測定されるポリスチレン換算の重量平均分子量(Mw)が1,000~10,000である共重合体を好ましい例として挙げることができる。重量平均分子量(Mw)は、1,500~5,000がより好ましい。
<Surfactant>
The photosensitive resin composition of the present invention may contain a surfactant. As the surfactant, any of anionic, cationic, nonionic, or amphoteric can be used, but a preferred surfactant is a nonionic surfactant. As the surfactant, for example, those described in paragraph numbers 0201 to 0205 of JP2012-88459A, and those described in paragraph numbers 0185 to 0188 of JP2011-215580A can be used. Is incorporated herein by reference.
Examples of nonionic surfactants include polyoxyethylene higher alkyl ethers, polyoxyethylene higher alkyl phenyl ethers, higher fatty acid diesters of polyoxyethylene glycol, silicone-based and fluorine-based surfactants. . The following trade names are KP-341, X-22-822 (manufactured by Shin-Etsu Chemical Co., Ltd.), Polyflow No. 99C (manufactured by Kyoeisha Chemical Co., Ltd.), F-top (manufactured by Mitsubishi Materials Kasei Co., Ltd.), MegaFac (manufactured by DIC Corporation), F-554 (manufactured by DIC Corporation), Florard Novec FC-4430 (Sumitomo) 3M Co., Ltd.), Surflon S-242 (manufactured by AGC Seimi Chemical Co., Ltd.), PolyFox PF-6320 (manufactured by OMNOVA), SH-8400 (Toray Dow Corning Silicone), Footgent FTX-218G (manufactured by Neos), etc. Can be mentioned.
Further, the surfactant is measured by gel permeation chromatography using the structural unit A and the structural unit B represented by the following general formula (I-1-1) and using tetrahydrofuran (THF) as a solvent. A preferred example is a copolymer having a polystyrene-equivalent weight average molecular weight (Mw) of 1,000 to 10,000. The weight average molecular weight (Mw) is more preferably 1,500 to 5,000.
一般式(I-1-1)
Figure JPOXMLDOC01-appb-C000048
 式(I-1-1)中、R401およびR403はそれぞれ独立に、水素原子またはメチル基を表し、R402は炭素数1以上4以下の直鎖アルキレン基を表し、R404は水素原子または炭素数1以上4以下のアルキル基を表し、Lは炭素数3以上6以下のアルキレン基を表し、pおよびqは重合比を表す質量百分率であり、pは10質量%以上80質量%以下の数値を表し、qは20質量%以上90質量%以下の数値を表し、rは1以上18以下の整数を表し、sは1以上10以下の整数を表す。
Formula (I-1-1)
Figure JPOXMLDOC01-appb-C000048
In formula (I-1-1), R 401 and R 403 each independently represent a hydrogen atom or a methyl group, R 402 represents a linear alkylene group having 1 to 4 carbon atoms, and R 404 represents a hydrogen atom. Alternatively, it represents an alkyl group having 1 to 4 carbon atoms, L represents an alkylene group having 3 to 6 carbon atoms, p and q are mass percentages representing a polymerization ratio, and p is 10 mass% to 80 mass%. Q represents a numerical value of 20% to 90% by mass, r represents an integer of 1 to 18, and s represents an integer of 1 to 10.
 上記Lは、下記一般式(I-1-2)で表される分岐アルキレン基であることが好ましい。
 一般式(I-1-2)におけるR405は、炭素数1以上4以下のアルキル基を表し、相溶性と被塗布面に対する濡れ性の点で、炭素数1以上3以下のアルキル基が好ましく、炭素数2または3のアルキル基がより好ましい。pとqとの合計は100が好ましい。
L is preferably a branched alkylene group represented by the following general formula (I-1-2).
R 405 in the general formula (I-1-2) represents an alkyl group having 1 to 4 carbon atoms, and is preferably an alkyl group having 1 to 3 carbon atoms in terms of compatibility and wettability to the coated surface. And an alkyl group having 2 or 3 carbon atoms is more preferred. The sum of p and q is preferably 100.
一般式(I-1-2)
Figure JPOXMLDOC01-appb-C000049
Formula (I-1-2)
Figure JPOXMLDOC01-appb-C000049
 界面活性剤は、1種単独でまたは2種以上を混合して使用することができる。
 本発明の感光性樹脂組成物が界面活性剤を有する場合、界面活性剤の含有量は、感光性樹脂組成物の全固形成分100質量部に対し、10質量部以下であることが好ましく、0.001~10質量部がより好ましく、0.01~3質量部がさらに好ましい。
Surfactant can be used individually by 1 type or in mixture of 2 or more types.
When the photosensitive resin composition of the present invention has a surfactant, the content of the surfactant is preferably 10 parts by mass or less with respect to 100 parts by mass of the total solid components of the photosensitive resin composition. 0.001 to 10 parts by mass is more preferable, and 0.01 to 3 parts by mass is even more preferable.
<酸化防止剤>
 本発明の感光性樹脂組成物は、酸化防止剤を含有してもよい。酸化防止剤としては、公知の酸化防止剤を含有することができる。酸化防止剤を添加することにより、硬化膜の着色を防止できる。更には、分解による膜厚減少を低減でき、また、耐熱透明性に優れるという利点がある。
 酸化防止剤としては、例えば、リン系酸化防止剤、アミド類、ヒドラジド類、ヒンダードアミン系酸化防止剤、イオウ系酸化防止剤、フェノール系酸化防止剤、アスコルビン酸類、硫酸亜鉛、糖類、亜硝酸塩、亜硫酸塩、チオ硫酸塩、ヒドロキシルアミン誘導体などを挙げることができる。これらの中では、硬化膜の着色、膜厚減少の観点からフェノール系酸化防止剤、ヒンダードアミン系酸化防止剤、リン系酸化防止剤、アミド系酸化防止剤、ヒドラジド系酸化防止剤、イオウ系酸化防止剤が好ましく、フェノール系酸化防止剤が最も好ましい。これらは1種単独で用いてもよいし、2種以上を混合してもよい。
 具体例としては、特開2005-29515号公報の段落番号0026~0031に記載の化合物、特開2011-227106号公報の段落番号0106~0116に記載の化合物を挙げる事ができ、これらの内容は本願明細書に組み込まれる。
 好ましい市販品として、アデカスタブAO-20、アデカスタブAO-60、アデカスタブAO-80、アデカスタブLA-52、アデカスタブLA-81、アデカスタブAO-412S、アデカスタブPEP-36、イルガノックス1035、イルガノックス1098、チヌビン144を挙げる事ができる。
<Antioxidant>
The photosensitive resin composition of the present invention may contain an antioxidant. As an antioxidant, a well-known antioxidant can be contained. By adding an antioxidant, coloring of the cured film can be prevented. Furthermore, there is an advantage that a reduction in film thickness due to decomposition can be reduced and heat-resistant transparency is excellent.
Examples of antioxidants include phosphorus antioxidants, amides, hydrazides, hindered amine antioxidants, sulfur antioxidants, phenol antioxidants, ascorbic acids, zinc sulfate, sugars, nitrites, sulfites. Examples thereof include salts, thiosulfates, and hydroxylamine derivatives. Among these, phenolic antioxidants, hindered amine antioxidants, phosphorus antioxidants, amide antioxidants, hydrazide antioxidants, sulfur antioxidants from the viewpoint of coloring the cured film and reducing film thickness Agents are preferred, and phenolic antioxidants are most preferred. These may be used individually by 1 type and may mix 2 or more types.
Specific examples include the compounds described in paragraph numbers 0026 to 0031 of JP-A-2005-29515, and the compounds described in paragraph numbers 0106 to 0116 of JP-A-2011-227106. It is incorporated herein.
Preferred commercially available products are ADK STAB AO-20, ADK STAB AO-60, ADK STAB AO-80, ADK STAB LA-52, ADK STAB LA-81, ADK STAB AO-412S, ADK STAB PEP-36, IRGANOX 1035, IRGANOX 1098, and Tinuvin 144. Can be mentioned.
 本発明の感光性樹脂組成物が酸化防止剤を有する場合、酸化防止剤の含有量は、感光性樹脂組成物の全固形成分100質量部に対し、0.1~10質量部であることが好ましく、0.2~5質量部であることがより好ましく、0.5~4質量部であることが特に好ましい。この範囲にすることで、形成された膜の十分な透明性が得られ、且つ、パターン形成時の感度も良好となる。 When the photosensitive resin composition of the present invention has an antioxidant, the content of the antioxidant is 0.1 to 10 parts by mass with respect to 100 parts by mass of the total solid components of the photosensitive resin composition. The amount is preferably 0.2 to 5 parts by mass, and particularly preferably 0.5 to 4 parts by mass. By setting it within this range, sufficient transparency of the formed film can be obtained, and the sensitivity at the time of pattern formation becomes good.
<酸増殖剤>
 本発明の感光性樹脂組成物は、感度向上を目的に、酸増殖剤を用いることができる。
 酸増殖剤は、酸触媒反応によってさらに酸を発生して反応系内の酸濃度を上昇させることができる化合物であり、酸が存在しない状態では安定に存在する化合物である。
 酸増殖剤の具体例としては、特開2011-221494の段落番号0226~0228に記載の酸増殖剤が挙げられ、この内容は本願明細書に組み込まれる。
 本発明の感光性樹脂組成物が酸増殖剤を含有する場合、酸増殖剤の含有量は、光酸発生剤100質量部に対して、10~1000質量部とするのが、露光部と未露光部との溶解コントラストの観点から好ましく、20~500質量部がさらに好ましい。酸増殖剤は、1種単独で使用しても、2種以上を併用してもよい。2種類以上の酸増殖剤を用いる場合は、その合計量が上記範囲となることが好ましい。
<Acid multiplication agent>
In the photosensitive resin composition of the present invention, an acid proliferating agent can be used for the purpose of improving sensitivity.
The acid proliferating agent is a compound that can further generate an acid by an acid-catalyzed reaction to increase the acid concentration in the reaction system, and is a compound that exists stably in the absence of an acid.
Specific examples of the acid proliferating agent include the acid proliferating agents described in paragraph numbers 0226 to 0228 of JP2011-221494A, the contents of which are incorporated herein.
When the photosensitive resin composition of the present invention contains an acid proliferation agent, the content of the acid proliferation agent is 10 to 1000 parts by mass with respect to 100 parts by mass of the photoacid generator. From the viewpoint of dissolution contrast with the exposed portion, it is preferably 20 to 500 parts by weight. The acid proliferating agent may be used alone or in combination of two or more. When two or more types of acid proliferating agents are used, the total amount is preferably within the above range.
<現像促進剤>
 本発明の感光性樹脂組成物は、現像促進剤を含有することができる。
 現像促進剤としては、特開2012-042837号公報の段落番号0171~0172に記載されているものを参酌でき、この内容は本願明細書に組み込まれる。
 現像促進剤は、1種を単独で用いてもよいし、2種以上を併用することも可能である。
 本発明の感光性樹脂組成物が現像促進剤を有する場合、現像促進剤の添加量は、感度と残膜率の観点から、感光性樹脂組成物の全固形分100質量部に対し、0~30質量部が好ましく、0.1~20質量部がより好ましく、0.5~10質量部であることが最も好ましい。
<Development accelerator>
The photosensitive resin composition of the present invention can contain a development accelerator.
As the development accelerator, those described in paragraphs 0171 to 0172 of JP2012-042837A can be referred to, and the contents thereof are incorporated in the present specification.
A development accelerator may be used individually by 1 type, and can also use 2 or more types together.
When the photosensitive resin composition of the present invention has a development accelerator, the addition amount of the development accelerator is 0 to 100 parts by mass with respect to 100 parts by mass of the total solid content of the photosensitive resin composition from the viewpoint of sensitivity and residual film ratio. 30 parts by mass is preferable, 0.1 to 20 parts by mass is more preferable, and 0.5 to 10 parts by mass is most preferable.
<その他の成分>
 本発明の感光性樹脂組成物は、必要に応じて、熱ラジカル発生剤、熱酸発生剤、紫外線吸収剤、増粘剤、有機または無機の沈殿防止剤などの公知の添加剤を、それぞれ独立に1種または2種以上、加えることができる。
 これらの化合物としては、例えば特開2012-88459号公報の段落番号0201~0224の記載の化合物を使用することができ、これらの内容は本願明細書に組み込まれる。
 また、特開2012-8223号公報の段落番号0120~0121に記載の熱ラジカル発生剤、WO2011/136074A1に記載の窒素含有化合物および熱酸発生剤も用いることができ、これらの内容は本願明細書に組み込まれる。
<Other ingredients>
In the photosensitive resin composition of the present invention, known additives such as a thermal radical generator, a thermal acid generator, an ultraviolet absorber, a thickener, and an organic or inorganic suspending agent are independently added as necessary. 1 type, or 2 or more types can be added.
As these compounds, for example, the compounds described in JP-A-2012-88459, paragraph numbers 0201 to 0224 can be used, and the contents thereof are incorporated in the present specification.
Further, a thermal radical generator described in paragraphs 0120 to 0121 of JP2012-8223A, a nitrogen-containing compound and a thermal acid generator described in WO2011-133604A1, can be used, and the contents thereof are described in this specification. Incorporated into.
<感光性樹脂組成物の調製方法>
 本発明の感光性樹脂組成物は、各成分を所定の割合でかつ任意の方法で混合し、撹拌溶解して調製することができる。例えば、各成分を、それぞれ予め溶剤に溶解させた溶液とした後、これらを所定の割合で混合して本発明の感光性樹脂組成物を調製することもできる。以上のように調製した組成物溶液は、例えば孔径0.2μmのフィルター等を用いてろ過した後に、使用することもできる。
<Method for preparing photosensitive resin composition>
The photosensitive resin composition of the present invention can be prepared by mixing each component at a predetermined ratio and by any method, stirring and dissolving. For example, the photosensitive resin composition of the present invention can also be prepared by mixing each component with a predetermined ratio after preparing each solution in advance in a solvent. The composition solution prepared as described above can be used after being filtered using, for example, a filter having a pore diameter of 0.2 μm.
<硬化膜の製造方法>
 本発明の硬化膜の製造方法は、以下の(1)~(5)の工程を含むことが好ましい。
 (1)本発明の感光性樹脂組成物を基板上に塗布する工程(塗布工程)
 (2)塗布された感光性樹脂組成物から溶剤を除去する工程(溶剤除去工程)
 (3)溶剤が除去された感光性樹脂組成物を活性光線により露光する工程(露光工程)
 (4)露光された感光性樹脂組成物を現像液により現像する工程(露光工程)
 (5)現像された感光性樹脂組成物を熱硬化する工程(ポストベーク工程)
 以下に各工程を順に説明する。
<Method for producing cured film>
The method for producing a cured film of the present invention preferably includes the following steps (1) to (5).
(1) The process of apply | coating the photosensitive resin composition of this invention on a board | substrate (application | coating process)
(2) Step of removing the solvent from the applied photosensitive resin composition (solvent removal step)
(3) Step of exposing the photosensitive resin composition from which the solvent has been removed with actinic rays (exposure step)
(4) Step of developing the exposed photosensitive resin composition with a developer (exposure step)
(5) Step of thermosetting the developed photosensitive resin composition (post-baking step)
Each step will be described below in order.
 (1)の工程では、本発明の感光性樹脂組成物を基板上に塗布して溶剤を含む湿潤膜とすることが好ましい。 In the step (1), it is preferable that the photosensitive resin composition of the present invention is applied on a substrate to form a wet film containing a solvent.
 (1)の工程では、基板に感光性樹脂組成物を塗布する前に、基板に対してアルカリ洗浄やプラズマ洗浄などの洗浄を行ってもよい。また、洗浄後の基板に対してヘキサメチルジシラザンなどで基板表面を処理してもよい。ヘキサメチルジシラザンで基板表面を処理する方法としては、特に限定されないが、例えば、ヘキサメチルジシラザン蒸気中に基板を晒しておく方法等が挙げられる。
 基板としては、無機基板、樹脂、樹脂複合材料などが挙げられる。
 無機基板としては、例えばガラス、石英、シリコーン、シリコンナイトライド、および、それらのような基板上にモリブデン、チタン、アルミ、銅などを蒸着した複合基板が挙げられる。
 樹脂としては、ポリブチレンテレフタレート、ポリエチレンテレフタレート、ポリエチレンナフタレート、ポリブチレンナフタレート、ポリスチレン、ポリカーボネート、ポリスルホン、ポリエーテルスルホン、ポリアリレート、アリルジグリコールカーボネート、ポリアミド、ポリイミド、ポリアミドイミド、ポリエーテルイミド、ポリベンズアゾール、ポリフェニレンサルファイド、ポリシクロオレフィン、ノルボルネン樹脂、ポリクロロトリフルオロエチレン等のフッ素樹脂、液晶ポリマー、アクリル樹脂、エポキシ樹脂、シリコーン樹脂、アイオノマー樹脂、シアネート樹脂、架橋フマル酸ジエステル、環状ポリオレフィン、芳香族エーテル、マレイミドーオレフィン、セルロース、エピスルフィド化合物等の合成樹脂からなる基板が挙げられる。
 これらの基板は、上記の形態のまま用いられる場合は少なく、最終製品の形態によって、例えば薄膜トランジスター(TFT)素子のような多層積層構造が形成されていてもよい。
 基板への感光性樹脂組成物の塗布方法は特に限定されず、例えば、スリットコート法、スプレー法、ロールコート法、回転塗布法、流延塗布法、スリットアンドスピン法等の方法を用いることができる。
 スリットコート法の場合には基板とスリットダイとの相対移動速度を50~120mm/secとすることが好ましい。
 感光性樹脂組成物を塗布したときの湿潤膜厚は特に限定されるものではなく、用途に応じた膜厚で塗布することができる。例えば、0.5~10μmが好ましい。
 基板に本発明の感光性樹脂組成物を塗布する前に、特開2009-145395号公報に記載されているような、所謂プリウェット法を適用することも可能である。
In the step (1), before the photosensitive resin composition is applied to the substrate, the substrate may be subjected to cleaning such as alkali cleaning or plasma cleaning. Further, the substrate surface may be treated with hexamethyldisilazane or the like with respect to the cleaned substrate. The method of treating the substrate surface with hexamethyldisilazane is not particularly limited, and examples thereof include a method of exposing the substrate to hexamethyldisilazane vapor.
Examples of the substrate include inorganic substrates, resins, and resin composite materials.
Examples of the inorganic substrate include glass, quartz, silicone, silicon nitride, and a composite substrate in which molybdenum, titanium, aluminum, copper, or the like is vapor-deposited on such a substrate.
The resins include polybutylene terephthalate, polyethylene terephthalate, polyethylene naphthalate, polybutylene naphthalate, polystyrene, polycarbonate, polysulfone, polyethersulfone, polyarylate, allyl diglycol carbonate, polyamide, polyimide, polyamideimide, polyetherimide, poly Fluorine resins such as benzazole, polyphenylene sulfide, polycycloolefin, norbornene resin, polychlorotrifluoroethylene, liquid crystal polymer, acrylic resin, epoxy resin, silicone resin, ionomer resin, cyanate resin, crosslinked fumaric acid diester, cyclic polyolefin, aromatic Made of synthetic resin such as aromatic ether, maleimide-olefin, cellulose, episulfide compound And the like.
These substrates are rarely used in the above-described form, and a multilayer laminated structure such as a thin film transistor (TFT) element may be formed depending on the form of the final product.
The method for applying the photosensitive resin composition to the substrate is not particularly limited. For example, a slit coating method, a spray method, a roll coating method, a spin coating method, a casting coating method, a slit and spin method, or the like may be used. it can.
In the case of the slit coating method, the relative movement speed between the substrate and the slit die is preferably 50 to 120 mm / sec.
The wet film thickness when the photosensitive resin composition is applied is not particularly limited, and can be applied with a film thickness according to the application. For example, 0.5 to 10 μm is preferable.
Before applying the photosensitive resin composition of the present invention to the substrate, it is also possible to apply a so-called pre-wet method as described in JP-A-2009-145395.
 (2)の工程では、感光性樹脂組成物を塗布して形成した上記の湿潤膜から、減圧(バキューム)および/または加熱等により、溶剤を除去して基板上に乾燥膜を形成させる。溶剤除去工程の加熱条件は、好ましくは70~130℃で30~300秒間程度である。温度と時間が上記範囲である場合、パターンの密着性がより良好で、且つ残渣もより低減できる傾向にある。 In the step (2), the solvent is removed from the wet film formed by applying the photosensitive resin composition by vacuum (vacuum) and / or heating to form a dry film on the substrate. The heating conditions for the solvent removal step are preferably 70 to 130 ° C. and about 30 to 300 seconds. When the temperature and time are in the above ranges, the pattern adhesiveness is better and the residue tends to be further reduced.
 (3)の工程では、乾燥膜を設けた基板に所定のパターンの活性光線を照射する。この工程では、露光部において、カルボキシル基またはフェノール性水酸基が生成し、露光部における現像液への溶解性が向上する。すなわち、酸基が酸分解性基で保護された基を有する構成単位を有する重合体成分と、光酸発生剤とを含む態様においては、活性光線の照射によって、光酸発生剤が分解して酸が発生する。そして、発生した酸の触媒作用により、塗膜成分中に含まれる酸分解性基が加水分解されて、カルボキシル基またはフェノール性水酸基が生成する。また、キノンジアジド化合物を含む態様においては、活性光線の照射によって、キノンジアジド化合物からカルボキシル基が生成される。
 活性光線の光源としては、低圧水銀灯、高圧水銀灯、超高圧水銀灯、ケミカルランプ、発光ダイオード(LED)光源、エキシマレーザー発生装置などを用いることができ、i線(365nm)、h線(405nm)、g線(436nm)などの波長300nm以上450nm以下の波長を有する活性光線が好ましく使用できる。また、必要に応じて長波長カットフィルター、短波長カットフィルター、バンドパスフィルターのような分光フィルターを通して照射光を調整することもできる。露光量は好ましくは1~500mJ/cm2である。
 露光装置としては、ミラープロジェクションアライナー、ステッパー、スキャナー、プロキシミティ、コンタクト、マイクロレンズアレイ、レンズスキャナ、レーザー露光、など各種方式の露光機を用いることができる。また、いわゆる超解像技術を用いた露光をすることもできる。超解像技術としては、複数回露光する多重露光や、位相シフトマスクを用いる方法、輪帯照明法などが挙げられる。これら超解像技術を用いることでより高精細なパターン形成が可能となり、好ましい。
In the step (3), the substrate provided with the dry film is irradiated with actinic rays having a predetermined pattern. In this step, a carboxyl group or a phenolic hydroxyl group is generated in the exposed area, and the solubility in the developer in the exposed area is improved. That is, in an embodiment including a polymer component having a structural unit having a group in which an acid group is protected by an acid-decomposable group, and a photoacid generator, the photoacid generator is decomposed by irradiation with actinic rays. Acid is generated. And the acid-decomposable group contained in a coating-film component is hydrolyzed by the catalytic action of the generated acid, and a carboxyl group or a phenolic hydroxyl group is generated. Moreover, in the aspect containing a quinonediazide compound, a carboxyl group is produced | generated from a quinonediazide compound by irradiation of actinic light.
As a light source of actinic light, a low-pressure mercury lamp, a high-pressure mercury lamp, an ultra-high pressure mercury lamp, a chemical lamp, a light emitting diode (LED) light source, an excimer laser generator, etc. can be used, i-line (365 nm), h-line (405 nm), Actinic rays having a wavelength of 300 nm or more and 450 nm or less, such as g-line (436 nm), can be preferably used. Moreover, irradiation light can also be adjusted through spectral filters, such as a long wavelength cut filter, a short wavelength cut filter, and a band pass filter, as needed. The exposure amount is preferably 1 to 500 mJ / cm 2 .
As the exposure apparatus, various types of exposure machines such as a mirror projection aligner, a stepper, a scanner, a proximity, a contact, a microlens array, a lens scanner, and a laser exposure can be used. In addition, exposure using a so-called super-resolution technique can be performed. Examples of the super-resolution technique include multiple exposure in which exposure is performed a plurality of times, a method using a phase shift mask, and an annular illumination method. By using these super-resolution techniques, it is possible to form a higher definition pattern, which is preferable.
 (4)の工程では、遊離したカルボキシル基またはフェノール性水酸基を有する共重合体を、現像液を用いて現像する。現像液に溶解しやすいカルボキシル基および/またはフェノール性水酸基を有する露光部領域を除去することにより、ポジ画像が形成する。
 現像工程で使用する現像液には、塩基性化合物の水溶液が含まれることが好ましい。塩基性化合物としては、例えば、水酸化リチウム、水酸化ナトリウム、水酸化カリウムなどのアルカリ金属水酸化物類;炭酸ナトリウム、炭酸カリウム、炭酸セシウムなどのアルカリ金属炭酸塩類;重炭酸ナトリウム、重炭酸カリウムなどのアルカリ金属重炭酸塩類;テトラメチルアンモニウムヒドロキシド、テトラエチルアンモニウムヒドロキシド、テトラプロピルアンモニウムヒドロキシド、テトラブチルアンモニウムヒドロキシド、ジエチルジメチルアンモニウムヒドロキシド等のテトラアルキルアンモニウムヒドロキシド類:コリン等の(ヒドロキシアルキル)トリアルキルアンモニウムヒドロキシド類;ケイ酸ナトリウム、メタケイ酸ナトリウムなどのケイ酸塩類;エチルアミン、プロピルアミン、ジエチルアミン、トリエチルアミン等のアルキルアミン類;ジメチルエタノールアミン、トリエタノールアミン等のアルコールアミン類;1,8-ジアザビシクロ-[5.4.0]-7-ウンデセン、1,5-ジアザビシクロ-[4.3.0]-5-ノネン等の脂環式アミン類を使用することができる。
 これらのうち、水酸化ナトリウム、水酸化カリウム、テトラメチルアンモニウムヒドロキシド、テトラエチルアンモニウムヒドロキシド、テトラプロピルアンモニウムヒドロキシド、テトラブチルアンモニウムヒドロキシド、コリン(2-ヒドロキシエチルトリメチルアンモニウムヒドロキシド)が好ましい。
 また、上記アルカリ類の水溶液にメタノールやエタノールなどの水溶性有機溶剤や界面活性剤を適当量添加した水溶液を現像液として使用することもできる。
 現像液のpHは、好ましくは10.0~14.0である。
 現像時間は、好ましくは30~500秒間であり、また、現像の手法は液盛り法(パドル法)、シャワー法、ディップ法等の何れでもよい。
 現像の後に、リンス工程を行うこともできる。リンス工程では、現像後の基板を純水などで洗うことで、付着している現像液除去、現像残渣除去を行う。リンス方法は公知の方法を用いることができる。例えばシャワーリンスやディップリンスなどを挙げる事ができる。
In the step (4), the copolymer having a liberated carboxyl group or phenolic hydroxyl group is developed using a developer. A positive image is formed by removing an exposed area having a carboxyl group and / or a phenolic hydroxyl group that is easily dissolved in the developer.
The developer used in the development step preferably contains an aqueous solution of a basic compound. Examples of basic compounds include alkali metal hydroxides such as lithium hydroxide, sodium hydroxide, and potassium hydroxide; alkali metal carbonates such as sodium carbonate, potassium carbonate, and cesium carbonate; sodium bicarbonate, potassium bicarbonate Alkali metal bicarbonates such as: tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, diethyldimethylammonium hydroxide, and other tetraalkylammonium hydroxides: Alkyl) trialkylammonium hydroxides; silicates such as sodium silicate and sodium metasilicate; ethylamine, propylamine, diethylamine, triethylammonium Alkylamines such as diamine; Alcoholamines such as dimethylethanolamine and triethanolamine; 1,8-diazabicyclo- [5.4.0] -7-undecene, 1,5-diazabicyclo- [4.3.0 ] Cycloaliphatic amines such as 5-nonene can be used.
Of these, sodium hydroxide, potassium hydroxide, tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, and choline (2-hydroxyethyltrimethylammonium hydroxide) are preferable.
An aqueous solution obtained by adding an appropriate amount of a water-soluble organic solvent such as methanol or ethanol or a surfactant to the alkaline aqueous solution can also be used as a developer.
The pH of the developer is preferably 10.0 to 14.0.
The development time is preferably 30 to 500 seconds, and the development method may be any of a liquid piling method (paddle method), a shower method, a dipping method, and the like.
A rinsing step can also be performed after development. In the rinsing step, the developed substrate and the development residue are removed by washing the developed substrate with pure water or the like. A known method can be used as the rinsing method. For example, shower rinse and dip rinse can be mentioned.
 (5)の工程では、得られたポジ画像を加熱することにより、酸分解性基を熱分解してカルボキシル基またはフェノール性水酸基を生成させ、架橋性基、架橋剤等と架橋させることにより、硬化膜を形成することができる。この加熱は、ホットプレートやオーブン等の加熱装置を用いて、所定の温度、例えば180~250℃で所定の時間、例えばホットプレート上なら5~90分間、オーブンならば30~120分間、加熱処理をすることが好ましい。このように架橋反応を進行させることにより、耐熱性、硬度等により優れた保護膜や層間絶縁膜を形成することができる。また、加熱処理を行う際は窒素雰囲気下で行うことにより、透明性をより向上させることもできる。
 ポストベークの前に、比較的低温でベークを行った後にポストベークすることもできる(ミドルベーク工程の追加)。ミドルベークを行う場合は、90~150℃で1~60分加熱した後に、200℃以上の高温でポストベークすることが好ましい。また、ミドルベーク、ポストベークを3段階以上の多段階に分けて加熱する事もできる。このようなミドルベーク、ポストベークの工夫により、パターンのテーパー角を調整することができる。これらの加熱は、ホットプレート、オーブン、赤外線ヒーターなど、公知の加熱方法を使用することができる。
 なお、ポストベークに先立ち、パターンを形成した基板に活性光線により全面再露光(ポスト露光)した後、ポストベークすることにより未露光部分に存在する光酸発生剤から酸を発生させ、架橋を促進する触媒として機能させることができ、膜の硬化反応を促進することができる。ポスト露光工程を含む場合の好ましい露光量としては、100~3,000mJ/cm2が好ましく、100~500mJ/cm2が特に好ましい。
In the step (5), by heating the obtained positive image, the acid-decomposable group is thermally decomposed to generate a carboxyl group or a phenolic hydroxyl group, and crosslinked with a crosslinkable group, a crosslinking agent, etc. A cured film can be formed. This heating is performed using a heating device such as a hot plate or an oven at a predetermined temperature, for example, 180 to 250 ° C. for a predetermined time, for example, 5 to 90 minutes on the hot plate, 30 to 120 minutes for the oven. It is preferable to By proceeding the crosslinking reaction in this way, a protective film and an interlayer insulating film that are superior in heat resistance, hardness, and the like can be formed. In addition, when the heat treatment is performed in a nitrogen atmosphere, the transparency can be further improved.
Prior to post-baking, post-baking can be performed after baking at a relatively low temperature (addition of a middle baking process). When middle baking is performed, it is preferable to post-bake at a high temperature of 200 ° C. or higher after heating at 90 to 150 ° C. for 1 to 60 minutes. Moreover, middle baking and post-baking can be heated in three or more stages. The taper angle of the pattern can be adjusted by devising such middle baking and post baking. These heating methods can use well-known heating methods, such as a hotplate, oven, and an infrared heater.
Prior to post-baking, the entire surface of the patterned substrate was re-exposed with actinic rays (post-exposure) and then post-baked to generate acid from the photoacid generator present in the unexposed areas and promote crosslinking. It can function as a catalyst that promotes the film curing reaction. The preferred exposure amount in the case of including a post-exposure step, preferably 100 ~ 3,000mJ / cm 2, particularly preferably 100 ~ 500mJ / cm 2.
 本発明の感光性樹脂組成物より得られた硬化膜は、ドライエッチングレジストとして使用することもできる。ポストベーク工程により熱硬化して得られた硬化膜をドライエッチングレジストとして使用する場合、エッチング処理としてはアッシング、プラズマエッチング、オゾンエッチングなどのドライエッチング処理を行うことができる。 The cured film obtained from the photosensitive resin composition of the present invention can also be used as a dry etching resist. In the case where a cured film obtained by thermal curing in a post-baking process is used as a dry etching resist, dry etching processes such as ashing, plasma etching, and ozone etching can be performed as the etching process.
<硬化膜>
 本発明の硬化膜は、上述した本発明の感光性樹脂組成物を硬化して得られた硬化膜である。また、本発明の硬化膜は、上述した本発明の硬化膜の形成方法により得られた硬化膜であることが好ましい。
 本発明の硬化膜は、層間絶縁膜として好適に用いることができる。
 本発明の感光性樹脂組成物は、高温でベークされた場合においても高い透明性を有する層間絶縁膜が得られる。本発明の感光性樹脂組成物を用いてなる層間絶縁膜は、高い透明性を有し、液晶表示装置、有機エレクトロルミネッセンス表示装置、タッチパネル等の用途に有用である。
<Curing film>
The cured film of the present invention is a cured film obtained by curing the above-described photosensitive resin composition of the present invention. Moreover, it is preferable that the cured film of this invention is a cured film obtained by the formation method of the cured film of this invention mentioned above.
The cured film of the present invention can be suitably used as an interlayer insulating film.
The photosensitive resin composition of the present invention can provide an interlayer insulating film having high transparency even when baked at a high temperature. The interlayer insulation film formed using the photosensitive resin composition of the present invention has high transparency and is useful for applications such as a liquid crystal display device, an organic electroluminescence display device, and a touch panel.
<液晶表示装置>
 本発明の液晶表示装置は、本発明の硬化膜を有する。
 本発明の液晶表示装置としては、本発明の感光性樹脂組成物を用いて形成される平坦化膜や層間絶縁膜を有すること以外は特に制限されず、様々な構造をとる公知の液晶表示装置を挙げることができる。
 例えば、本発明の液晶表示装置が具備するTFTの具体例としては、アモルファスシリコン-TFT、低温ポリシリコンーTFT、酸化物半導体TFT等が挙げられる。本発明の硬化膜は電気特性に優れるため、これらのTFTに組み合わせて好ましく用いることができる。
 また、本発明の液晶表示装置が取りうる液晶駆動方式としてはTN(TwistedNematic)方式、VA(Virtical Alignment)方式、IPS(In-Place-Switchine)方式、FFS(Frings Field Switching)方式、OCB(Optical Compensated Bend)方式などが挙げられる。
 パネル構成においては、COA(Color Filter on Allay)方式の液晶表示装置でも本発明の硬化膜を用いることができ、例えば、特開2005-284291の有機絶縁膜(115)や、特開2005-346054の有機絶縁膜(212)として用いることができる。また、本発明の液晶表示装置が取りうる液晶配向膜の具体的な配向方式としてはラビング配向法、光配向方などが挙げられる。また、特開2003-149647号公報や特開2011-257734号公報に記載のPSA(Polymer Sustained Alignment)技術によってポリマー配向支持されていてもよい。
 また、本発明の感光性樹脂組成物および本発明の硬化膜は、上記用途に限定されず種々の用途に使用することができる。例えば、平坦化膜や層間絶縁膜以外にも、カラーフィルターの保護膜や、液晶表示装置における液晶層の厚みを一定に保持するためのスペーサーや固体撮像素子においてカラーフィルター上に設けられるマイクロレンズ等に好適に用いることができる。
 図1は、アクティブマトリックス方式の液晶表示装置10の一例を示す概念的断面図である。この液晶表示装置10は、背面にバックライトユニット12を有する液晶パネルであって、液晶パネルは、偏光フィルムが貼り付けられた2枚のガラス基板14,15の間に配置されたすべての画素に対応するTFT16の素子が配置されている。ガラス基板上に形成された各素子には、硬化膜17中に形成されたコンタクトホール18を通して、画素電極を形成するITO(Indium Tin Oxide)透明電極19が配線されている。ITO透明電極19の上には、液晶20の層とブラックマトリックスを配置したカラーフィルター22が設けられている。
 バックライトの光源としては、特に限定されず公知の光源を用いることができる。例えば白色LED、青色・赤色・緑色などの多色LED、蛍光灯(冷陰極管)、有機エレクトロルミネッセンス(有機EL)などを挙げる事ができる。
 また、液晶表示装置は、3D(立体視)型のものとしたり、タッチパネル型のものとしたりすることも可能である。さらにフレキシブル型にすることも可能であり、特開2011-145686号公報に記載の第2層間絶縁膜(48)や、特開2009-258758号公報に記載の層間絶縁膜(520)、特開2007-328210号公報の図1に記載の有機絶縁膜(PAS)として用いることができる。
 さらに、スタティック駆動方式の液晶表示装置でも、本発明を適用することで意匠性の高いパターンを表示させることも可能である。例として、特開2001-125086号公報に記載されているようなポリマーネットワーク型液晶の絶縁膜として本発明を適用することができる。
<Liquid crystal display device>
The liquid crystal display device of the present invention has the cured film of the present invention.
The liquid crystal display device of the present invention is not particularly limited except that it has a planarizing film and an interlayer insulating film formed using the photosensitive resin composition of the present invention, and known liquid crystal display devices having various structures. Can be mentioned.
For example, specific examples of TFTs included in the liquid crystal display device of the present invention include amorphous silicon-TFT, low-temperature polysilicon-TFT, oxide semiconductor TFT, and the like. Since the cured film of the present invention is excellent in electrical characteristics, it can be preferably used in combination with these TFTs.
The liquid crystal driving methods that can be taken by the liquid crystal display device of the present invention include TN (Twisted Nematic) method, VA (Virtual Alignment) method, IPS (In-Place-Switching) method, FFS (Frings Field Switching) method, OCB (Optical). Compensated Bend) method and the like.
In the panel configuration, the cured film of the present invention can also be used in a COA (Color Filter on Array) type liquid crystal display device. For example, the organic insulating film (115) of Japanese Patent Application Laid-Open No. 2005-284291, or Japanese Patent Application Laid-Open No. 2005-346054. It can be used as an organic insulating film (212). Specific examples of the alignment method of the liquid crystal alignment film that the liquid crystal display device of the present invention can take include a rubbing alignment method and a photo alignment method. Further, the polymer orientation may be supported by a PSA (Polymer Sustained Alignment) technique described in JP-A Nos. 2003-149647 and 2011-257734.
Moreover, the photosensitive resin composition of this invention and the cured film of this invention are not limited to the said use, It can be used for various uses. For example, in addition to the planarization film and interlayer insulating film, a protective film for the color filter, a spacer for keeping the thickness of the liquid crystal layer in the liquid crystal display device constant, a microlens provided on the color filter in the solid-state imaging device, etc. Can be suitably used.
FIG. 1 is a conceptual cross-sectional view showing an example of an active matrix liquid crystal display device 10. The liquid crystal display device 10 is a liquid crystal panel having a backlight unit 12 on the back surface, and the liquid crystal panel is disposed on all pixels disposed between two glass substrates 14 and 15 having a polarizing film attached thereto. Corresponding TFT 16 elements are arranged. Each element formed on the glass substrate is wired with an ITO (Indium Tin Oxide) transparent electrode 19 that forms a pixel electrode through a contact hole 18 formed in the cured film 17. On the ITO transparent electrode 19, a color filter 22 in which a layer of liquid crystal 20 and a black matrix are arranged is provided.
The light source of the backlight is not particularly limited, and a known light source can be used. For example, white LED, multicolor LED such as blue, red and green, fluorescent lamp (cold cathode tube), organic electroluminescence (organic EL) and the like can be mentioned.
Further, the liquid crystal display device can be a 3D (stereoscopic) type or a touch panel type. Further, a flexible type can also be used. The second interlayer insulating film (48) described in JP2011-145686A, the interlayer insulating film (520) described in JP2009-258758A, JP It can be used as an organic insulating film (PAS) described in FIG. 1 of 2007-328210.
Further, even in a static drive type liquid crystal display device, a pattern with high designability can be displayed by applying the present invention. As an example, the present invention can be applied as an insulating film of a polymer network type liquid crystal as described in JP-A-2001-125086.
 特開2007-328210号公報の図1に記載の液晶表示装置について、図2を用いて説明する。
 図2において、符号SUB1は、ガラス基板であり、複数の走査信号線と、複数の走査信号線に交差する複数の映像信号線とを有している。各交点近傍には、TFTを有している。
 ガラス基板SUB1の上には、下から順に下地膜UC、シリコン等の半導体膜PS、ゲート絶縁膜GI、TFTのゲート電極GT、第1の層間絶縁膜IN1が形成されている。第1の層間絶縁膜IN1の上には、TFTのドレイン電極SD1と、TFTのソース電極SD2とが形成されている。
 ドレイン電極SD1は、ゲート絶縁膜GI及び第1の層間絶縁膜IN1に形成されたコンタクトホールを介してTFTのドレイン領域に接続されている。ソース電極SD2は、ゲート絶縁膜GI及び第1の層間絶縁膜IN1に形成されたコンタクトホールを介してTFTのソース領域に接続されている。
 ドレイン電極SD1及びソース電極SD2の上には、第2の層間絶縁膜IN2が形成されている。第2の層間絶縁膜IN2の上には、有機絶縁膜PASが形成されている。有機絶縁膜PASは、本発明の感光性樹脂組成物を用いて形成できる。
 有機絶縁膜PASの上には、対向電極CT及び反射膜RALが形成されている。
 対向電極CT及び反射膜RALの上には、第3の層間絶縁膜IN3が形成されている。第3の層間絶縁膜IN3の上には、画素電極PXが形成されている。画素電極PXは、第2の層間絶縁膜IN2及び第3の層間絶縁膜IN3に形成されたコンタクトホールを介してTFTのソース電極SD2と接続されている。
 有機絶縁膜PASを、本発明の感光性樹脂組成物を用いて形成した場合においては、有機絶縁膜PASの耐熱性が優れているため、第3の層間絶縁膜IN3の製膜温度を高めることができ、より緻密な膜を製膜できる。
 なお、第1の層間絶縁膜IN1、第2の層間絶縁膜IN2、第3の層間絶縁膜IN3も本発明の感光性樹脂組成物を用いて形成することができる。
 図2に示す液晶表示装置の詳細については、特開2007-328210号公報の記載を参酌でき、この内容は本明細書に組み込まれることとする。
The liquid crystal display device shown in FIG. 1 of Japanese Patent Application Laid-Open No. 2007-328210 will be described with reference to FIG.
In FIG. 2, reference numeral SUB1 denotes a glass substrate, which has a plurality of scanning signal lines and a plurality of video signal lines intersecting with the plurality of scanning signal lines. A TFT is provided in the vicinity of each intersection.
On the glass substrate SUB1, a base film UC, a semiconductor film PS such as silicon, a gate insulating film GI, a TFT gate electrode GT, and a first interlayer insulating film IN1 are formed in this order from the bottom. A drain electrode SD1 of the TFT and a source electrode SD2 of the TFT are formed on the first interlayer insulating film IN1.
The drain electrode SD1 is connected to the drain region of the TFT through a contact hole formed in the gate insulating film GI and the first interlayer insulating film IN1. The source electrode SD2 is connected to the source region of the TFT through a contact hole formed in the gate insulating film GI and the first interlayer insulating film IN1.
A second interlayer insulating film IN2 is formed on the drain electrode SD1 and the source electrode SD2. An organic insulating film PAS is formed on the second interlayer insulating film IN2. The organic insulating film PAS can be formed using the photosensitive resin composition of the present invention.
On the organic insulating film PAS, a counter electrode CT and a reflective film RAL are formed.
A third interlayer insulating film IN3 is formed on the counter electrode CT and the reflective film RAL. A pixel electrode PX is formed on the third interlayer insulating film IN3. The pixel electrode PX is connected to the source electrode SD2 of the TFT through a contact hole formed in the second interlayer insulating film IN2 and the third interlayer insulating film IN3.
In the case where the organic insulating film PAS is formed using the photosensitive resin composition of the present invention, since the heat resistance of the organic insulating film PAS is excellent, the film forming temperature of the third interlayer insulating film IN3 is increased. And a denser film can be formed.
Note that the first interlayer insulating film IN1, the second interlayer insulating film IN2, and the third interlayer insulating film IN3 can also be formed using the photosensitive resin composition of the present invention.
The details of the liquid crystal display device shown in FIG. 2 can be referred to the description in Japanese Patent Application Laid-Open No. 2007-328210, and the contents thereof are incorporated in this specification.
<有機エレクトロルミネッセンス表示装置>
 本発明の有機エレクトロルミネッセンス(有機EL)表示装置は、本発明の硬化膜を有する。
 本発明の有機EL表示装置としては、本発明の感光性樹脂組成物を用いて形成される平坦化膜や層間絶縁膜を有すること以外は特に制限されず、様々な構造をとる公知の各種有機EL表示装置や液晶表示装置を挙げることができる。
 例えば、本発明の有機EL表示装置が具備するTFTの具体例としては、アモルファスシリコン-TFT、低温ポリシリコンーTFT、酸化物半導体TFT等が挙げられる。本発明の硬化膜は電気特性に優れるため、これらのTFTに組み合わせて好ましく用いることができる。
 図3は、有機EL表示装置の一例の構成概念図である。ボトムエミッション型の有機EL表示装置における基板の模式的断面図を示し、平坦化膜4を有している。
 ガラス基板6上にボトムゲート型のTFT1を形成し、TFT1を覆う状態でSiから成る絶縁膜3が形成されている。絶縁膜3に、ここでは図示を省略したコンタクトホールを形成した後、このコンタクトホールを介してTFT1に接続される配線2(高さ1.0μm)が絶縁膜3上に形成されている。配線2は、TFT1間または、後の工程で形成される有機EL素子とTFT1とを接続するためのものである。
 さらに、配線2の形成による凹凸を平坦化するために、配線2による凹凸を埋め込む状態で絶縁膜3上に平坦化膜4が形成されている。
 平坦化膜4上には、ボトムエミッション型の有機EL素子が形成されている。すなわち、平坦化膜4上に、ITOからなる第一電極5が、コンタクトホール7を介して配線2に接続させて形成されている。また、第一電極5は、有機EL素子の陽極に相当する。
 第一電極5の周縁を覆う形状の絶縁膜8が形成されており、絶縁膜8を設けることによって、第一電極5とこの後の工程で形成する第二電極との間のショートを防止することができる。
 さらに、図3には図示していないが、所望のパターンマスクを介して、正孔輸送層、有機発光層、電子輸送層を順次蒸着して設け、次いで、基板上方の全面にAlから成る第二電極を形成し、封止用ガラス板と紫外線硬化型エポキシ樹脂を用いて貼り合わせることで封止し、各有機EL素子にこれを駆動するためのTFT1が接続されてなるアクティブマトリックス型の有機EL表示装置が得られる。
<Organic electroluminescence display device>
The organic electroluminescence (organic EL) display device of the present invention has the cured film of the present invention.
The organic EL display device of the present invention is not particularly limited except that it has a flattening film and an interlayer insulating film formed using the photosensitive resin composition of the present invention, and various known organic materials having various structures. An EL display device and a liquid crystal display device can be given.
For example, specific examples of TFTs included in the organic EL display device of the present invention include amorphous silicon-TFT, low-temperature polysilicon-TFT, oxide semiconductor TFT, and the like. Since the cured film of the present invention is excellent in electrical characteristics, it can be preferably used in combination with these TFTs.
FIG. 3 is a conceptual diagram of a configuration of an example of an organic EL display device. A schematic cross-sectional view of a substrate in a bottom emission type organic EL display device is shown, and a planarizing film 4 is provided.
A bottom gate type TFT 1 is formed on a glass substrate 6, and an insulating film 3 made of Si 3 N 4 is formed so as to cover the TFT 1. A contact hole (not shown) is formed in the insulating film 3, and then a wiring 2 (height: 1.0 μm) connected to the TFT 1 through the contact hole is formed on the insulating film 3. The wiring 2 is for connecting the TFT 1 with an organic EL element formed between the TFTs 1 or in a later process.
Further, in order to flatten the unevenness due to the formation of the wiring 2, the flattening film 4 is formed on the insulating film 3 with the unevenness due to the wiring 2 being embedded.
On the planarizing film 4, a bottom emission type organic EL element is formed. That is, the first electrode 5 made of ITO is formed on the planarizing film 4 so as to be connected to the wiring 2 through the contact hole 7. The first electrode 5 corresponds to the anode of the organic EL element.
An insulating film 8 having a shape covering the periphery of the first electrode 5 is formed. By providing the insulating film 8, a short circuit between the first electrode 5 and the second electrode formed in the subsequent process is prevented. be able to.
Further, although not shown in FIG. 3, a hole transport layer, an organic light emitting layer, and an electron transport layer are sequentially deposited through a desired pattern mask, and then a second layer made of Al is formed on the entire surface above the substrate. An active matrix organic material in which two electrodes are formed and sealed by bonding using a sealing glass plate and an ultraviolet curable epoxy resin, and each organic EL element is connected to a TFT 1 for driving it. An EL display device is obtained.
 本発明の感光性樹脂組成物は、感度が良好で、現像時のパターン密着性に優れるため、MEMS(Micro Electro Mechanical Systems)デバイスの構造部材として、本発明の感光性樹脂組成物を用いて形成されたレジストパターンを隔壁としたり、機械駆動部品の一部として組み込んで使用される。MEMSデバイスとしては、例えばSAW(Surface Acoustic Wave)フィルター、BAW(Bulk Acoustic Wave)フィルター、ジャイロセンサー、ディスプレイ用マイクロシャッター、イメージセンサー、電子ペーパー、インクジェットヘッド、バイオチップ、封止剤等の部品が挙げられる。より具体的な例は、特表2007-522531、特開2008-250200、特開2009-263544等に例示されている。 Since the photosensitive resin composition of the present invention has good sensitivity and excellent pattern adhesion during development, it is formed using the photosensitive resin composition of the present invention as a structural member of a MEMS (Micro Electro Mechanical Systems) device. The resist pattern thus formed is used as a partition wall or incorporated as a part of a mechanical drive component. Examples of MEMS devices include parts such as SAW (Surface Acoustic Wave) filters, BAW (Bulk Acoustic Wave) filters, gyro sensors, micro shutters for displays, image sensors, electronic paper, inkjet heads, biochips, and sealants. It is done. More specific examples are exemplified in JP-T-2007-522531, JP-A-2008-250200, JP-A-2009-263544, and the like.
 本発明の感光性樹脂組成物は、平坦性や透明性に優れるため、例えば特開2011-107476号公報の図2に記載のバンク層(16)および平坦化膜(57)、特開2010-9793号公報の図4(a)に記載の隔壁(12)および平坦化膜(102)、特開2010-27591号公報の図10に記載のバンク層(221)および第3層間絶縁膜(216b)、特開2009-128577号公報の図4(a)に記載の第2層間絶縁膜(125)および第3層間絶縁膜(126)、特開2010-182638号公報の図3に記載の平坦化膜(12)および画素分離絶縁膜(14)などの形成に用いることもできる。この他、液晶表示装置における液晶層の厚みを一定に保持するためのスペーサーや、ファクシミリ、電子複写機、固体撮像素子等のオンチップカラーフィルターの結像光学系あるいは光ファイバコネクタのマイクロレンズにも好適に用いることができる。 Since the photosensitive resin composition of the present invention is excellent in flatness and transparency, for example, the bank layer (16) and the planarization film (57) described in FIG. 2 of JP-A-2011-107476, JP-A-2010- The partition wall (12) and the planarization film (102) described in FIG. 4 (a) of Japanese Patent No. 9793, the bank layer (221) and the third interlayer insulating film (216b) described in FIG. 10 of Japanese Patent Application Laid-Open No. 2010-27591. ), The second interlayer insulating film (125) and the third interlayer insulating film (126) described in FIG. 4A of JP-A-2009-128577, and the flatness described in FIG. 3 of JP-A-2010-182638. It can also be used to form a chemical film (12) and a pixel isolation insulating film (14). In addition, spacers for maintaining the thickness of the liquid crystal layer in liquid crystal display devices, imaging optical systems for on-chip color filters such as facsimiles, electronic copying machines, solid-state image sensors, and micro lenses for optical fiber connectors are also used. It can be used suitably.
<タッチパネル及びタッチパネル表示装置>
 本発明のタッチパネルは、絶縁層及び/又は保護層の、全部又は一部が本発明の感光性樹脂組成物の硬化物からなるタッチパネルである。また、本発明のタッチパネルは、透明基板、電極及び絶縁層及び/又は保護層を少なくとも有することが好ましい。
 本発明のタッチパネル表示装置は、本発明のタッチパネルを有するタッチパネル表示装置であることが好ましい。本発明のタッチパネルとしては、抵抗膜方式、静電容量方式、超音波方式、電磁誘導方式など公知の方式いずれでもよい。中でも、静電容量方式が好ましい。
 静電容量方式のタッチパネルとしては、特開2010-28115号公報に開示されるものや、国際公開第2012/057165号に開示されるものが挙げられる。
 タッチパネル表示装置としては、いわゆる、インセル型(例えば、特表2012-517051号公報の図5、図6、図7、図8)、いわゆる、オンセル型(例えば、特開2012-43394号公報の図14、国際公開第2012/141148号の図2(b))、OGS型、TOL型、その他の構成(例えば、特開2013-164871号公報の図6)を挙げることができる
 静電容量方式のタッチパネルは、前面板と、前面板の非接触側に、少なくとも下記(1)~(5)の要素を有し、(4)の絶縁層が本発明の感光性樹脂組成物を用いた硬化膜であることが好ましい。
 (1)額縁層
 (2)複数のパッド部分が接続部分を介して第一の方向に延在して形成された複数の第一の透明電極パターン
 (3)第一の透明電極パターンと電気的に絶縁され、第一の方向に交差する方向に延在して形成された複数のパッド部分からなる複数の第二の透明電極パターン
 (4)第一の透明電極パターンと第二の透明電極パターンとを電気的に絶縁する絶縁層
 (5)第一の透明電極パターンおよび第二の透明電極パターンの少なくとも一方に電気的に接続され、第一の透明電極パターンおよび第二の透明電極パターンとは別の導電性要素
 本発明の静電容量型入力装置は、さらに上記(1)~(5)の要素の全てまたは一部を覆うように透明保護層を設置することが好ましく、透明保護層が本発明の硬化膜であることがより好ましい。
<Touch panel and touch panel display device>
The touch panel of the present invention is a touch panel in which all or part of the insulating layer and / or protective layer is made of a cured product of the photosensitive resin composition of the present invention. Moreover, it is preferable that the touch panel of this invention has a transparent substrate, an electrode, an insulating layer, and / or a protective layer at least.
The touch panel display device of the present invention is preferably a touch panel display device having the touch panel of the present invention. As the touch panel of the present invention, any of known methods such as a resistive film method, a capacitance method, an ultrasonic method, and an electromagnetic induction method may be used. Among these, the electrostatic capacity method is preferable.
Examples of the capacitive touch panel include those disclosed in JP 2010-28115 A and those disclosed in International Publication No. 2012/057165.
As a touch panel display device, a so-called in-cell type (for example, FIG. 5, FIG. 6, FIG. 7 and FIG. 8 in Japanese Patent Publication No. 2012-517051), a so-called on-cell type (for example, Japanese Patent Application Laid-Open No. 2012-43394). 14, International Publication No. 2012/141148, FIG. 2 (b)), OGS type, TOL type, and other configurations (for example, FIG. 6 of Japanese Patent Application Laid-Open No. 2013-164871). The touch panel has at least the following elements (1) to (5) on the front plate and the non-contact side of the front plate, and the insulating layer (4) is a cured film using the photosensitive resin composition of the present invention. It is preferable that
(1) Frame layer (2) A plurality of first transparent electrode patterns formed by extending a plurality of pad portions in a first direction via connection portions (3) First transparent electrode pattern and electrical And a plurality of second transparent electrode patterns comprising a plurality of pad portions formed extending in a direction crossing the first direction. (4) First transparent electrode pattern and second transparent electrode pattern (5) The first transparent electrode pattern and the second transparent electrode pattern are electrically connected to at least one of the first transparent electrode pattern and the second transparent electrode pattern. Another conductive element In the capacitive input device of the present invention, it is preferable that a transparent protective layer is further provided so as to cover all or a part of the elements (1) to (5). The cured film of the present invention is more preferable. There.
 まず、静電容量方式のタッチパネルの構成について説明する。図4は、静電容量方式のタッチパネルの構成例を示す断面図である。図4において静電容量方式のタッチパネル30は、前面板31と、額縁層32と、第一の透明電極パターン33と、第二の透明電極パターン34と、絶縁層35と、導電性要素36と、透明保護層37とから構成されている。 First, the configuration of the capacitive touch panel will be described. FIG. 4 is a cross-sectional view illustrating a configuration example of a capacitive touch panel. In FIG. 4, the capacitive touch panel 30 includes a front plate 31, a frame layer 32, a first transparent electrode pattern 33, a second transparent electrode pattern 34, an insulating layer 35, and a conductive element 36. And a transparent protective layer 37.
 前面板31は、ガラス基板等の透明基板で構成されており、コーニング社のゴリラガラスに代表される強化ガラスなどを用いることができる。なお、透明基板としては、ガラス基板、石英基板、透明樹脂基板等が好ましく挙げられる。また、図4において、前面板31の各要素が設けられている側を非接触面と称する。静電容量方式のタッチパネル30においては、前面板31の接触面(非接触面の反対の面)に指などを接触などさせて入力が行われる。以下、前面板を、「基材」と称する場合がある。 The front plate 31 is made of a transparent substrate such as a glass substrate, and tempered glass represented by gorilla glass manufactured by Corning Inc. can be used. In addition, as a transparent substrate, a glass substrate, a quartz substrate, a transparent resin substrate, etc. are mentioned preferably. Moreover, in FIG. 4, the side in which each element of the front plate 31 is provided is called a non-contact surface. In the capacitive touch panel 30, input is performed by bringing a finger or the like into contact with the contact surface of the front plate 31 (the surface opposite to the non-contact surface). Hereinafter, the front plate may be referred to as a “base material”.
 また、前面板31の非接触面上には額縁層32が設けられている。額縁層32は、タッチパネル前面板の非接触側に形成された表示領域周囲の額縁状のパターンであり、引回し配線等が見えないようにするために形成される。
 静電容量方式のタッチパネルには、図5に示すように、前面板31の一部の領域(図5においては入力面以外の領域)を覆うように額縁層32が設けることができる。さらに、前面板31には、図5に示すように一部に開口部38を設けることができる。開口部38には、押圧によるメカニカルなスイッチを設置することができる。
A frame layer 32 is provided on the non-contact surface of the front plate 31. The frame layer 32 is a frame-like pattern around the display area formed on the non-contact side of the front panel of the touch panel, and is formed so as not to show the lead wiring and the like.
As shown in FIG. 5, the capacitive touch panel may be provided with a frame layer 32 so as to cover a part of the front plate 31 (a region other than the input surface in FIG. 5). Further, the front plate 31 can be provided with an opening 38 in part as shown in FIG. A mechanical switch by pressing can be installed in the opening 38.
 図6に示すように、前面板31の接触面には、複数のパッド部分が接続部分を介して第一の方向に延在して形成された複数の第一の透明電極パターン33と、第一の透明電極パターン33と電気的に絶縁され、第一の方向に交差する方向に延在して形成された複数のパッド部分からなる複数の第二の透明電極パターン34と、第一の透明電極パターン33と第二の透明電極パターン34を電気的に絶縁する絶縁層35とが形成されている。第一の透明電極パターン33と、第二の透明電極パターン34と、後述する導電性要素36とは、例えば金属膜で作製することができる。このような金属膜としては、ITO(Indium Tin Oxide)膜;IZO(Indium Zinc Oxide)膜;Al、Cu、Ag、Ti、Mo、これらの合金等の金属膜;SiO等の金属酸化膜などが挙げられる。この際、各要素の膜厚は10~200nmとすることができる。また、焼成によりアモルファスのITO膜を多結晶のITO膜へと結晶化させ、電気的抵抗を低減することもできる。また、第一の透明電極パターン33と、第二の透明電極パターン34と、後述する導電性要素36とは、導電性繊維を用いた感光性樹脂組成物を有する感光性転写材料を用いて製造することもできる。その他、ITO等によって第一の導電性パターン等を形成する場合には、特許第4506785号公報の段落0014~0016等を参酌することができ、この内容は本明細書に組み込まれる。 As shown in FIG. 6, on the contact surface of the front plate 31, a plurality of first transparent electrode patterns 33 formed with a plurality of pad portions extending in the first direction via the connection portions, A plurality of second transparent electrode patterns 34 each including a plurality of pad portions that are electrically insulated from one transparent electrode pattern 33 and extend in a direction crossing the first direction; An insulating layer 35 that electrically insulates the electrode pattern 33 and the second transparent electrode pattern 34 is formed. The 1st transparent electrode pattern 33, the 2nd transparent electrode pattern 34, and the electroconductive element 36 mentioned later can be produced with a metal film, for example. As such a metal film, an ITO (Indium Tin Oxide) film; an IZO (Indium Zinc Oxide) film; a metal film such as Al, Cu, Ag, Ti, Mo, and alloys thereof; a metal oxide film such as SiO 2 ; Is mentioned. At this time, the film thickness of each element can be 10 to 200 nm. Further, the amorphous ITO film can be crystallized into a polycrystalline ITO film by firing, and the electrical resistance can be reduced. Moreover, the 1st transparent electrode pattern 33, the 2nd transparent electrode pattern 34, and the electroconductive element 36 mentioned later are manufactured using the photosensitive transfer material which has the photosensitive resin composition using a conductive fiber. You can also In addition, when the first conductive pattern or the like is formed of ITO or the like, paragraphs 0014 to 0016 of Japanese Patent No. 4506785 can be referred to, and the contents thereof are incorporated in this specification.
 また、第一の透明電極パターン33および第二の透明電極パターン34の少なくとも一方は、前面板31の非接触面および額縁層32の前面板31とは逆側の面の両方の領域にまたがって設置することができる。図4においては、第二の透明電極パターンが、前面板31の非接触面および額縁層32の前面板31とは逆側の面の両方の領域にまたがって設置されている図が示されている。 Further, at least one of the first transparent electrode pattern 33 and the second transparent electrode pattern 34 extends over both the non-contact surface of the front plate 31 and the region of the frame layer 32 opposite to the front plate 31. Can be installed. In FIG. 4, a diagram is shown in which the second transparent electrode pattern is installed across both areas of the non-contact surface of the front plate 31 and the surface opposite to the front plate 31 of the frame layer 32. Yes.
 図6を用いて第一の透明電極パターン33および第二の透明電極パターン34について説明する。図6は、第一の透明電極パターンおよび第二の透明電極パターンの一例を示す説明図である。図6に示すように、第一の透明電極パターン33は、パッド部分33aが接続部分33bを介して第一の方向に延在して形成されている。また、第二の透明電極パターン34は、第一の透明電極パターン33と絶縁層35によって電気的に絶縁されており、第一の方向に交差する方向(図6における第二の方向)に延在して形成された複数のパッド部分によって構成されている。ここで、第一の透明電極パターン33を形成する場合、パッド部分33aと接続部分33bとを一体として作製してもよいし、接続部分33bのみを作製して、パッド部分33aと第二の透明電極パターン34とを一体として作製(パターニング)してもよい。パッド部分33aと第二の透明電極パターン34とを一体として作製(パターニング)する場合、図6に示すように接続部分33bの一部とパッド部分33aの一部とが連結され、かつ、絶縁層35によって第一の透明電極パターン33と第二の透明電極パターン34とが電気的に絶縁されるように各層が形成される。 The first transparent electrode pattern 33 and the second transparent electrode pattern 34 will be described with reference to FIG. FIG. 6 is an explanatory diagram showing an example of the first transparent electrode pattern and the second transparent electrode pattern. As shown in FIG. 6, the first transparent electrode pattern 33 is formed such that the pad portion 33a extends in the first direction via the connection portion 33b. The second transparent electrode pattern 34 is electrically insulated by the first transparent electrode pattern 33 and the insulating layer 35, and extends in a direction intersecting the first direction (second direction in FIG. 6). It is constituted by a plurality of pad portions that are formed. Here, when the first transparent electrode pattern 33 is formed, the pad portion 33a and the connection portion 33b may be manufactured integrally, or only the connection portion 33b is manufactured, and the pad portion 33a and the second transparent electrode pattern 33 are formed. The electrode pattern 34 may be integrally formed (patterned). When the pad portion 33a and the second transparent electrode pattern 34 are integrally formed (patterned), as shown in FIG. 6, a part of the connection part 33b and a part of the pad part 33a are connected and an insulating layer is formed. Each layer is formed so that the first transparent electrode pattern 33 and the second transparent electrode pattern 34 are electrically insulated by 35.
 図4において、額縁層32の前面板31とは逆側の面側には導電性要素36が設置されている。導電性要素36は、第一の透明電極パターン33および第二の透明電極パターン34の少なくとも一方に電気的に接続され、かつ、第一の透明電極パターン33および第二の透明電極パターン34とは別の要素である。図4においては、導電性要素36が第二の透明電極パターン34に接続されている図が示されている。 In FIG. 4, a conductive element 36 is installed on the surface side of the frame layer 32 opposite to the front plate 31. The conductive element 36 is electrically connected to at least one of the first transparent electrode pattern 33 and the second transparent electrode pattern 34, and is different from the first transparent electrode pattern 33 and the second transparent electrode pattern 34. Is another element. In FIG. 4, a view in which the conductive element 36 is connected to the second transparent electrode pattern 34 is shown.
 また、図4においては、各構成要素の全てを覆うように透明保護層37が設置されている。透明保護層37は、各構成要素の一部のみを覆うように構成されていてもよい。絶縁層35と透明保護層37とは、同一材料であってもよいし、異なる材料であってもよい。 Moreover, in FIG. 4, the transparent protective layer 37 is installed so that all of each component may be covered. The transparent protective layer 37 may be configured to cover only a part of each component. The insulating layer 35 and the transparent protective layer 37 may be made of the same material or different materials.
 静電容量方式のタッチパネルおよび静電容量方式のタッチパネルを構成要素として備えるタッチパネル表示装置は、「最新タッチパネル技術」(2009年7月6日発行(株)テクノタイムズ)、三谷雄二監修、「タッチパネルの技術と開発」シーエムシー出版(2004,12)、「FPD International 2009 Forum T-11講演テキストブック」、「Cypress Semiconductor Corporation アプリケーションノートAN2292」等に開示されている構成を適用することができる。 The touch panel display device including the capacitive touch panel and the capacitive touch panel as a constituent element is “Latest Touch Panel Technology” (Techno Times, issued July 6, 2009), supervised by Yuji Mitani, “Touch Panel The configurations disclosed in “Technology and Development” CMC Publishing (2004, 12), “FPD International 2009 Forum T-11 Lecture Textbook”, “Cypress Semiconductor Corporation Application Note AN2292” and the like can be applied.
 本発明のタッチパネルは、例えば、次のようにして製造できる。
 すなわち、ITO電極に接するように、本発明の感光性樹脂組成物をインクジェット塗布方式など各種方法により塗布する工程1、上記ITO電極に塗布した感光性樹脂組成物上に所定形状の開口パターンを有するマスクを載置し、活性エネルギー線照射を行い露光する工程2、露光後の感光性樹脂組成物を現像する工程3、および、現像後の感光性樹脂組成物を加熱する工程4を経て製造できる。
The touch panel of the present invention can be manufactured, for example, as follows.
That is, the photosensitive resin composition of the present invention is applied by various methods such as an inkjet coating method so as to be in contact with the ITO electrode, and an opening pattern having a predetermined shape is formed on the photosensitive resin composition applied to the ITO electrode. It can be manufactured through Step 2 in which a mask is placed and exposed by irradiation with active energy rays, Step 3 in which the exposed photosensitive resin composition is developed, and Step 4 in which the photosensitive resin composition after development is heated. .
 工程1において、ITO電極に接するように、感光性樹脂組成物を塗布する際、塗布された本発明の感光性樹脂組成物の少なくとも一部が、ITO電極に接していればよい。
 工程2は、上述した露光工程と同様に行うことができ、好ましい態様も同様である。
 工程3は、上述した現像工程と同様に行うことができ、好ましい態様も同様である。
 工程4は、上述したポストベーク工程と同様に行うことができ、好ましい態様も同様である。
 また、本発明のタッチパネルにおけるITO電極パターンの一例としては、上述した図6に示すパターンが好ましく挙げられる。
In Step 1, when the photosensitive resin composition is applied so as to be in contact with the ITO electrode, it is sufficient that at least a part of the applied photosensitive resin composition of the present invention is in contact with the ITO electrode.
Step 2 can be performed in the same manner as the exposure step described above, and the preferred embodiment is also the same.
Step 3 can be performed in the same manner as the development step described above, and the preferred embodiment is also the same.
Step 4 can be performed in the same manner as the post-baking step described above, and the preferred embodiment is also the same.
Moreover, as an example of the ITO electrode pattern in the touch panel of this invention, the pattern shown in FIG. 6 mentioned above is mentioned preferably.
 以下に実施例を挙げて本発明をさらに具体的に説明する。以下の実施例に示す材料、使用量、割合、処理内容、処理手順等は、本発明の趣旨を逸脱しない限り、適宜、変更することができる。従って、本発明の範囲は以下に示す具体例に限定されるものではない。なお、特に断りのない限り、「部」、「%」は質量基準である。また、NMRは核磁気共鳴の略称である。 The present invention will be described more specifically with reference to the following examples. The materials, amounts used, ratios, processing details, processing procedures, and the like shown in the following examples can be changed as appropriate without departing from the spirit of the present invention. Therefore, the scope of the present invention is not limited to the specific examples shown below. Unless otherwise specified, “part” and “%” are based on mass. NMR is an abbreviation for nuclear magnetic resonance.
(樹脂A-1の合成)ポリベンゾオキサゾール前駆体の合成
 温度計、攪拌器、窒素導入管を備えた3つ口フラスコに、293g(0.8mol)のヘキサフルオロ-2,2-ビス(3-アミノ-4-ヒドロキシフェニル)プロパン(Bis-AP-AF、セントラル硝子(株)製)、158.2g(2.0mol)のピリジンおよび1.2kgのN-メチル-2-ピロリドン(NMP)を添加した。これを室温で撹拌、次いでドライアイス/メタノールバスで-15℃まで冷却した。この溶液に、反応温度を-5℃~-15℃で維持しながら、73.9g(0.364mol)のイソフタロイルクロライド(IC、東京化成(株)製)、107.4g(0.364mol)の4,4’-オキシビスベンゾイルクロライド(ODC、東京化成(株)製)、NMP(1-メチル-2-ピロリドン)700gの混合溶液を滴下した。滴下が完了した後、得られた混合物を室温で16時間撹拌した。
 次に、この反応液を氷/メタノールバスで-5℃以下まで冷却し、反応温度を-0℃以下で維持しながらアセチルクロライド17.0g(0.217mol)を滴下した。滴下が完了した後、さらに16時間撹拌した。
 この反応液をNMP2Lで希釈し、激しく攪拌した20Lの脱イオン水中に投入し、析出した白色粉体を濾過によって回収し、そして脱イオン水および水/メタノール(50/50質量比)混合物によって洗浄した。真空下でポリマーを50℃において2日間乾燥させ、樹脂A-1aを得た。
 500mLナスフラスコに25.0gの樹脂A-1a、125gのNMPと125gのメチルエチルケトンを添加し、60℃で内容物が150gになるまで減圧濃縮した。ここに、0.4gのカンファースルホン酸(東京化成(株)製)と、5.0gの2,3-ジヒドロフラン(和光純薬工業(株)製)を添加し、室温で3時間撹拌した。得られた溶液にトリエチルアミン0.5gとNMP150gを加えて希釈した。得られた溶液を激しく攪拌した1Lの脱イオン水中に投入し、析出した白色粉体を濾過によって回収し、そして脱イオン水および水/メタノール(50/50質量比)混合物によって洗浄した。真空下でポリマーを50℃において2日間乾燥させ、樹脂A-1を得た。得られた樹脂A-1の重量平均分子量は16000(ゲルパーミエーションクロマトグラフィーのポリスチレン換算値)であった。得られた樹脂A-1の水酸基保護率は、樹脂A-1aの全水酸基量(モル量)に対して、30%であった(H-NMR)。
(Synthesis of Resin A-1) Synthesis of Polybenzoxazole Precursor In a three-necked flask equipped with a thermometer, a stirrer, and a nitrogen introduction tube, 293 g (0.8 mol) of hexafluoro-2,2-bis (3 -Amino-4-hydroxyphenyl) propane (Bis-AP-AF, manufactured by Central Glass Co., Ltd.), 158.2 g (2.0 mol) of pyridine and 1.2 kg of N-methyl-2-pyrrolidone (NMP) Added. This was stirred at room temperature and then cooled to −15 ° C. with a dry ice / methanol bath. To this solution, while maintaining the reaction temperature at −5 ° C. to −15 ° C., 73.9 g (0.364 mol) of isophthaloyl chloride (IC, manufactured by Tokyo Chemical Industry Co., Ltd.), 107.4 g (0.364 mol) ), 4,4′-oxybisbenzoyl chloride (ODC, manufactured by Tokyo Chemical Industry Co., Ltd.) and 700 g of NMP (1-methyl-2-pyrrolidone) were added dropwise. After the addition was complete, the resulting mixture was stirred at room temperature for 16 hours.
Next, the reaction solution was cooled to −5 ° C. or lower with an ice / methanol bath, and 17.0 g (0.217 mol) of acetyl chloride was added dropwise while maintaining the reaction temperature at −0 ° C. or lower. After completion of the dropwise addition, the mixture was further stirred for 16 hours.
This reaction solution is diluted with 2 L of NMP, poured into 20 L of deionized water with vigorous stirring, the precipitated white powder is recovered by filtration, and washed with deionized water and a water / methanol (50/50 mass ratio) mixture. did. The polymer was dried under vacuum at 50 ° C. for 2 days to obtain Resin A-1a.
25.0 g of Resin A-1a, 125 g of NMP and 125 g of methyl ethyl ketone were added to a 500 mL eggplant flask and concentrated under reduced pressure at 60 ° C. until the contents became 150 g. To this, 0.4 g of camphorsulfonic acid (manufactured by Tokyo Chemical Industry Co., Ltd.) and 5.0 g of 2,3-dihydrofuran (manufactured by Wako Pure Chemical Industries, Ltd.) were added and stirred at room temperature for 3 hours. . The resulting solution was diluted by adding 0.5 g of triethylamine and 150 g of NMP. The resulting solution was poured into 1 L of deionized water with vigorous stirring, the precipitated white powder was collected by filtration and washed with deionized water and a water / methanol (50/50 mass ratio) mixture. The polymer was dried under vacuum at 50 ° C. for 2 days to obtain Resin A-1. The weight average molecular weight of the obtained resin A-1 was 16000 (polystyrene conversion value of gel permeation chromatography). The hydroxyl group protection rate of the obtained resin A-1 was 30% with respect to the total hydroxyl amount (molar amount) of the resin A-1a ( 1 H-NMR).
(樹脂A-2~A-6の合成)
 樹脂A-1の合成法のジカルボン酸ジクロリドを、下記表に示すジカルボン酸ジクロリドに変更した以外は同様の方法にて合成した。なお、樹脂A-5は、ジヒドロフランによる保護反応は行わなかった。
Figure JPOXMLDOC01-appb-T000050
(Synthesis of resins A-2 to A-6)
Resin A-1 was synthesized by the same method except that the dicarboxylic acid dichloride used in the synthesis method was changed to the dicarboxylic acid dichloride shown in the following table. Resin A-5 was not protected by dihydrofuran.
Figure JPOXMLDOC01-appb-T000050
(樹脂A-7の合成)ポリイミド前駆体の合成
 温度計、攪拌器、窒素導入管を備えた3つ口フラスコに、14.06g(64.5mmol)のピロメリト酸二無水物(東京化成(株)製)と、11.08g(58.7mmol)の4,4’-オキシジアニリン(東京化成(株)製)、150gのNMPを添加し、80℃で12時間攪拌した。さらに0.60g(12.8mmol)のエタノールを添加し、さらに6時間攪拌した。
 この反応液をNMP2Lで希釈し、激しく攪拌した20Lの脱イオン水中に投入し、析出した白色粉体を濾過によって回収し、そして脱イオン水および水/メタノール(50/50質量比)混合物によって洗浄した。真空下でポリマーを50℃において2日間乾燥させ、樹脂A-7aを得た。以降は樹脂A-1と同様の方法にて樹脂A-7を合成した。
(Synthesis of Resin A-7) Synthesis of Polyimide Precursor In a three-necked flask equipped with a thermometer, a stirrer, and a nitrogen introduction tube, 14.06 g (64.5 mmol) of pyromellitic dianhydride (Tokyo Chemical Industry Co., Ltd.) )), 11.08 g (58.7 mmol) of 4,4′-oxydianiline (manufactured by Tokyo Chemical Industry Co., Ltd.) and 150 g of NMP were added and stirred at 80 ° C. for 12 hours. Further, 0.60 g (12.8 mmol) of ethanol was added, and the mixture was further stirred for 6 hours.
This reaction solution is diluted with 2 L of NMP, poured into 20 L of deionized water with vigorous stirring, the precipitated white powder is recovered by filtration, and washed with deionized water and a water / methanol (50/50 mass ratio) mixture. did. The polymer was dried under vacuum at 50 ° C. for 2 days to give Resin A-7a. Thereafter, Resin A-7 was synthesized by the same method as Resin A-1.
(樹脂A-8~10の合成)
 樹脂A-7の合成法のテトラカルボン酸二無水物を、下記表に示すテトラカルボン酸二無水物に変更した以外は同様の方法にて合成した。なお、樹脂A-9は、ジヒドロフランによる保護反応は行わなかった。
Figure JPOXMLDOC01-appb-T000051
(Synthesis of Resins A-8 to 10)
Resin A-7 was synthesized by the same method except that tetracarboxylic dianhydride in the synthesis method was changed to tetracarboxylic dianhydride shown in the following table. Resin A-9 was not protected with dihydrofuran.
Figure JPOXMLDOC01-appb-T000051
<感光性樹脂組成物の調製>
 下記表に示す各成分を混合し、孔径0.2μmのポリテトラフルオロエチレン製フィルターでろ過して、各感光性樹脂組成物を得た。表中の特に単位を付していない数値は質量部である。
<Preparation of photosensitive resin composition>
Each component shown in the following table was mixed and filtered through a polytetrafluoroethylene filter having a pore size of 0.2 μm to obtain each photosensitive resin composition. The numerical value which does not attach | subject the unit in particular in a table | surface is a mass part.
<液安定性>
 感光性樹脂組成物が10g入った容器を密閉し、25℃、湿度65%の環境下に静置した。ポリベンゾオキサゾール前駆体またはポリイミド前駆体の環化が進行し、固体が析出するまでの時間を評価した。固体の析出は、孔径0.8μmのメッシュで濾過し、メッシュ上の異物の有無を目視で観察した。固体が析出するまでの時間が長ければ長いほど、組成物の安定性が高く、好ましい結果であり、A、B、Cが実用範囲である。
A:20日を越えても固体の析出が見られなかった
B:10日を超えて、20日以内に固体が析出した
C:5日を超えて、10日以内に固体が析出した
D:5日以内に固体が析出した
<Liquid stability>
The container containing 10 g of the photosensitive resin composition was sealed and allowed to stand in an environment of 25 ° C. and humidity 65%. The time until the cyclization of the polybenzoxazole precursor or the polyimide precursor progressed and the solid was precipitated was evaluated. Solid precipitation was filtered through a mesh having a pore size of 0.8 μm, and the presence or absence of foreign matter on the mesh was visually observed. The longer the time until the solid precipitates, the higher the stability of the composition, which is a preferable result, and A, B, and C are in the practical range.
A: Solid precipitation was not observed even after 20 days B: Solid was precipitated within 20 days after 10 days C: Solid was precipitated within 10 days after 5 days D: Solid precipitated within 5 days
<感度>
 ヘキサメチルジシラザン(HMDS)蒸気で1分間表面処理をしたガラス基板(1100×1300mmサイズ、0.7mm厚、コーニング社製)上に、各感光性樹脂組成物をSK-N1300G(大日本スクリーン)でスリットコートした後、0.26kPa(2.0Torr)まで減圧し、100℃/90秒ホットプレート上でプリベークして溶剤を揮発させ、膜厚3.0μmの感光性樹脂組成物層を形成した。次に、得られた感光性樹脂組成物層を、キヤノン(株)製MPAsp-H760露光機を用いて、5.0μmホールパターンに露光した。80℃/90秒ホットプレート上で加熱後、アルカリ現像液(0.6質量%のテトラメチルアンモニウムヒドロキシド水溶液)で現像し(25℃、70秒)、超純水で30秒リンスした。これにより下底の径が5.0μmのホールパターンが形成される露光量を感度とした。必要露光量が少ないほど(高感度であるほど)好ましく、A、B、Cが実用範囲である。
 A:100mJ/cm未満
 B:100mJ/cm以上150mJ/cm未満
 C:150mJ/cm以上200mJ/cm未満
 D:200mJ/cm以上
<Sensitivity>
Each photosensitive resin composition is SK-N1300G (Dainippon Screen) on a glass substrate (1100 × 1300 mm size, 0.7 mm thickness, manufactured by Corning) that has been surface-treated with hexamethyldisilazane (HMDS) vapor for 1 minute. After slit coating, the pressure was reduced to 0.26 kPa (2.0 Torr) and pre-baked on a hot plate at 100 ° C. for 90 seconds to volatilize the solvent to form a photosensitive resin composition layer having a thickness of 3.0 μm. . Next, the obtained photosensitive resin composition layer was exposed to a 5.0 μm hole pattern using an MPAsp-H760 exposure machine manufactured by Canon Inc. After heating on a hot plate at 80 ° C. for 90 seconds, development was performed with an alkali developer (0.6 mass% tetramethylammonium hydroxide aqueous solution) (25 ° C., 70 seconds), and rinsed with ultrapure water for 30 seconds. Thus, the exposure amount at which a hole pattern having a diameter of 5.0 μm at the bottom was formed was defined as sensitivity. The smaller the required exposure amount (the higher the sensitivity), the better, and A, B, and C are practical ranges.
A: 100mJ / cm 2 less B: 100mJ / cm 2 or more 150 mJ / cm 2 less than C: 150mJ / cm 2 or more 200 mJ / cm 2 less than D: 200mJ / cm 2 or more
<透過率>
 ガラス基板(OA-10(日本電気硝子社製))を、HMDS蒸気下に30秒曝し、各感光性樹脂組成物をスリット塗布した後、バキュームドライで溶剤を揮発させた後、120℃/120秒ホットプレート上でプリベークし、膜厚2.0μmの感光性樹脂組成物層を形成した。続いて超高圧水銀灯を用いて積算照射量が300mJ/cm(エネルギー強度:20mW/cm)となるように露光し、この基板をオーブンにて窒素雰囲気下で300℃/60分間加熱した。この硬化膜の透過率を、分光光度計(U-3000:(株)日立製作所製)を用いて、波長400nmで測定した。単位は%で示した。A、BおよびCが実用レベルである。
 A:90%以上
 B:85%以上90%未満
 C:80%以上85%未満
 D:80%未満
<Transmissivity>
A glass substrate (OA-10 (manufactured by Nippon Electric Glass Co., Ltd.)) was exposed to HMDS vapor for 30 seconds, each photosensitive resin composition was slit-coated, and the solvent was volatilized by vacuum drying. Pre-baked on a second hot plate to form a photosensitive resin composition layer having a thickness of 2.0 μm. Then, it exposed so that an integrated irradiation amount might be set to 300 mJ / cm < 2 > (energy intensity: 20 mW / cm < 2 >) using the ultrahigh pressure mercury lamp, and this board | substrate was heated in nitrogen atmosphere at 300 degreeC / 60 minutes. The transmittance of the cured film was measured at a wavelength of 400 nm using a spectrophotometer (U-3000: manufactured by Hitachi, Ltd.). The unit is expressed in%. A, B and C are practical levels.
A: 90% or more B: 85% or more and less than 90% C: 80% or more and less than 85% D: Less than 80%
<硬化性>
 ガラス基板(OA-10(日本電気硝子社製))を、HMDS蒸気下に30秒曝し、各感光性樹脂組成物をスリット塗布した後、バキュームドライで溶剤を揮発させた後、120℃/120秒ホットプレート上でプリベークし、膜厚2.0μmの感光性樹脂組成物層を形成した。
 感光性樹脂組成物を掻きとり、窒素中、250℃に維持した状態での熱重量分析(TGA測定)を行い、環化時間を評価した。前駆体は環化反応の進行にともない、重量減少が起こるが、この重量減少が発生しなくなるまでの時間を以下の基準で評価した。時間が短ければ短いほど環化速度が速くなっていることを表し、A、B、Cが実用範囲である。
A:10分を超えて30分以下
B:30分を超えて60分以下
C:60分を超えて90分以下
D:90分を超えた。もしくは環化しなかった。
<Curing property>
A glass substrate (OA-10 (manufactured by Nippon Electric Glass Co., Ltd.)) was exposed to HMDS vapor for 30 seconds, each photosensitive resin composition was slit-coated, and the solvent was volatilized by vacuum drying. Pre-baked on a second hot plate to form a photosensitive resin composition layer having a thickness of 2.0 μm.
The photosensitive resin composition was scraped and subjected to thermogravimetric analysis (TGA measurement) in a state maintained at 250 ° C. in nitrogen to evaluate the cyclization time. As the cyclization reaction progresses, the precursor loses weight, and the time until the weight loss does not occur was evaluated according to the following criteria. The shorter the time, the faster the cyclization rate, and A, B, and C are practical ranges.
A: Over 10 minutes and under 30 minutes B: Over 30 minutes over 60 minutes C: Over 60 minutes over 90 minutes D: Over 90 minutes Or it did not cyclize.
<表示ムラ(パネル信頼性)の評価)>
 薄膜トランジスタ(TFT)を用いた液晶表示装置を以下の方法で作製した。特許第3321003号公報の図1に記載のアクティブマトリクス型液晶表示装置において、層間絶縁膜として硬化膜17を以下のようにして形成し、液晶表示装置を得た。
 すなわち、特許第3321003号公報の0058段落の基板と層間絶縁膜17の濡れ性を向上させる前処理として、基板をヘキサメチルジシラザン蒸気下に30秒曝し、その後、各感光性樹脂組成物をスピンコート塗布した後、120℃で2分ホットプレート上でプリベークして溶剤を揮発させ、膜厚2.0μmの感光性樹脂組成物層を形成した。次に、得られた感光性樹脂組成物層に対し、マスク上から超高圧水銀灯を用いて積算照射量が300mJ/cm(照度20mW/cm)照射した後、アルカリ水溶液にて現像してパターンを形成し、窒素雰囲気下で300℃で60分間の加熱処理を行った。実施例の感光性樹脂組成物を塗布する際の塗布性は良好で、露光、現像、焼成の後に得られた硬化膜には、しわやクラックの発生は認められなかった。
 得られた液晶表示装置を強制条件(温度85℃/相対湿度80%RH、LH-113 恒温恒湿器 エスペック社製)で24h放置し、液晶表示装置を取り出した。その液晶表示装置に対して駆動電圧を印加し、グレイのテスト信号を入力させたときのグレイ表示を目視にて観察し、表示ムラの発生の有無を下記評価基準にしたがって評価した。以下の基準でA~Cが好ましく、AまたはBがより好ましい。
 A:まったくムラがみられない(非常に良い)
 B:ガラス基板の縁部分にかすかにムラが見られるが、表示部に問題なし(良い)
 C:表示部にかすかにムラが見られるが実用レベル(普通)
 D:表示部にムラがある(悪い)
<Evaluation of display unevenness (panel reliability)>
A liquid crystal display device using a thin film transistor (TFT) was produced by the following method. In the active matrix type liquid crystal display device shown in FIG. 1 of Japanese Patent No. 3321003, a cured film 17 was formed as an interlayer insulating film as follows to obtain a liquid crystal display device.
That is, as a pretreatment for improving the wettability of the substrate and the interlayer insulating film 17 in paragraph 0058 of Japanese Patent No. 3321003, the substrate is exposed to hexamethyldisilazane vapor for 30 seconds, and then each photosensitive resin composition is spun. After coating application, the solvent was volatilized by prebaking on a hot plate at 120 ° C. for 2 minutes to form a photosensitive resin composition layer having a thickness of 2.0 μm. Next, the obtained photosensitive resin composition layer was irradiated with an integrated irradiation amount of 300 mJ / cm 2 (illuminance 20 mW / cm 2 ) using an ultrahigh pressure mercury lamp from above the mask, and then developed with an alkaline aqueous solution. A pattern was formed, and heat treatment was performed at 300 ° C. for 60 minutes in a nitrogen atmosphere. The applicability when applying the photosensitive resin composition of the example was good, and no wrinkles or cracks were observed in the cured film obtained after exposure, development, and baking.
The obtained liquid crystal display device was allowed to stand for 24 hours under forced conditions (temperature 85 ° C./relative humidity 80% RH, LH-113 constant temperature and humidity chamber manufactured by Espec), and the liquid crystal display device was taken out. When a drive voltage was applied to the liquid crystal display device and a gray test signal was input, the gray display was visually observed, and the presence or absence of display unevenness was evaluated according to the following evaluation criteria. A to C are preferred on the following criteria, and A or B is more preferred.
A: No unevenness at all (very good)
B: Slight unevenness is observed on the edge of the glass substrate, but there is no problem in the display (good)
C: Slight unevenness on the display, but practical level (normal)
D: Display is uneven (bad)
Figure JPOXMLDOC01-appb-T000052
Figure JPOXMLDOC01-appb-T000052
 上記結果より、実施例の感光性樹脂組成物は、感度および硬化性が良好で、いずれも実用レベルを満たしていた。更には、保存安定性、透過性、表示ムラにも優れていた。
 一方、比較例の感光性樹脂組成物は、感度および硬化性の少なくとも一つが、実用レベルに満たないものであった。
From the above results, the photosensitive resin compositions of the examples had good sensitivity and curability and both satisfied practical levels. Furthermore, it was excellent in storage stability, permeability, and display unevenness.
On the other hand, in the photosensitive resin composition of the comparative example, at least one of sensitivity and curability was less than a practical level.
 実施例および比較例に用いた各化合物を示す略号の詳細は、以下の通りである。
 (A)樹脂
 A-1~A-10:上述した樹脂A-1~A-10
 (B)化合物
 B-1:N-フェニルイミノ2酢酸(和光純薬工業(株)製)
 B-2:1,2-ビス(2-アミノフェノキシ)エタン-N,N,N’,N’-4酢酸(東京化成社製)
 B-3:N-メチルイミノ2酢酸(東京化成社製)
 B-4:N-ベンジルイミノ2酢酸(東京化成社製)
 <以下は比較化合物である>
 R-1:N-メチルグリシン(東京化成社製)
 R-2:N-フェニルグリシン(東京化成社製)
 R-3:N,N-ジメチルグリシン(東京化成社製)
 R-4:N,N-ジ(2-ヒドロキシエチル)グリシン(東京化成社製)
 R-5:N-(tert-ブトキシカルボニル)-L-プロリノール(東京化成社製)
 R-6:N,N-ジメチルアニリン(東京化成社製
 (C)光酸発生剤
 C-1:下記に示す構造(PAG-103、BASF社製、pKaが3以下の酸を発生する光酸発生剤)
Figure JPOXMLDOC01-appb-C000053
 C-2:下記に示す構造(PAI-101、みどり化学社製、pKaが3以下の酸を発生する光酸発生剤)、Meはメチル基を表す。
Figure JPOXMLDOC01-appb-C000054
 C-3:下記に示す構造(pKaが3以下の酸を発生する光酸発生剤、合成例を後述する。)
Figure JPOXMLDOC01-appb-C000055
 C-4:下記に示す構造(pKaが3以下の酸を発生する光酸発生剤、合成例を後述する)、Tsはトシル基を表す。
Figure JPOXMLDOC01-appb-C000056
 C-5:下記に示す構造(pKaが3以下の酸を発生する光酸発生剤、合成例を後述する)
Figure JPOXMLDOC01-appb-C000057
 C-6:下記に示す構造(GSID-26-1、トリアリールスルホニウム塩(BASF社製)、pKaが3以下の酸を発生する光酸発生剤)
Figure JPOXMLDOC01-appb-C000058
 C-7:TAS-200(ナフトキノンジアジド、東洋合成工業(株)製)
 DBA:9,10-ジブトキシアントラセン(川崎化成社製、増感剤)
(D)溶剤
 NMP:N-メチル-2-ピロリドン
(E)化合物(酸基の少なくとも一部が酸分解性基で保護された基を有する化合物)
 E-1:下記化合物 分子量494(9,9-ビス(4-ヒドロキシフェニル)フルオレン(JFEケミカル社製)のフェノール性水酸基を、エチルビニルエーテルで定法に従って保護)
Figure JPOXMLDOC01-appb-C000059
(F)架橋剤
 F-1:JER157S65 (エポキシ架橋剤:ジャパンエポキシレジン社製)
 F-2:JER157S70 (エポキシ架橋剤:ジャパンエポキシレジン社製)
 F-3:JER1007K (エポキシ架橋剤:ジャパンエポキシレジン社製)
(G)密着促進剤
 G-1:γ-グリシドキシプロピルトリアルコキシシラン(KBM-403:信越化学社製)
(H)界面活性剤
 H-1:パーフルオロアルキル基含有ノニオン界面活性剤(F-554:DIC製)
The details of the abbreviations indicating the compounds used in Examples and Comparative Examples are as follows.
(A) Resins A-1 to A-10: Resins A-1 to A-10 described above
(B) Compound B-1: N-phenyliminodiacetic acid (manufactured by Wako Pure Chemical Industries, Ltd.)
B-2: 1,2-bis (2-aminophenoxy) ethane-N, N, N ′, N′-4 acetic acid (manufactured by Tokyo Chemical Industry Co., Ltd.)
B-3: N-methyliminodiacetic acid (manufactured by Tokyo Chemical Industry Co., Ltd.)
B-4: N-benzyliminodiacetic acid (manufactured by Tokyo Chemical Industry Co., Ltd.)
<The following are comparative compounds>
R-1: N-methylglycine (manufactured by Tokyo Chemical Industry Co., Ltd.)
R-2: N-phenylglycine (manufactured by Tokyo Chemical Industry Co., Ltd.)
R-3: N, N-dimethylglycine (manufactured by Tokyo Chemical Industry Co., Ltd.)
R-4: N, N-di (2-hydroxyethyl) glycine (manufactured by Tokyo Chemical Industry Co., Ltd.)
R-5: N- (tert-butoxycarbonyl) -L-prolinol (manufactured by Tokyo Chemical Industry Co., Ltd.)
R-6: N, N-dimethylaniline (manufactured by Tokyo Chemical Industry Co., Ltd. (C) Photoacid generator C-1: structure shown below (PAG-103, manufactured by BASF Corp., photoacid that generates an acid having a pKa of 3 or less) Generator)
Figure JPOXMLDOC01-appb-C000053
C-2: Structure shown below (PAI-101, manufactured by Midori Chemical Co., a photoacid generator that generates an acid having a pKa of 3 or less), Me represents a methyl group.
Figure JPOXMLDOC01-appb-C000054
C-3: Structure shown below (a photoacid generator that generates an acid having a pKa of 3 or less, and a synthesis example will be described later)
Figure JPOXMLDOC01-appb-C000055
C-4: Structure shown below (a photoacid generator that generates an acid having a pKa of 3 or less, synthesis examples will be described later), and Ts represents a tosyl group.
Figure JPOXMLDOC01-appb-C000056
C-5: Structure shown below (a photoacid generator that generates an acid having a pKa of 3 or less, a synthesis example will be described later)
Figure JPOXMLDOC01-appb-C000057
C-6: Structure shown below (GSID-26-1, triarylsulfonium salt (manufactured by BASF), photoacid generator that generates an acid having a pKa of 3 or less)
Figure JPOXMLDOC01-appb-C000058
C-7: TAS-200 (naphthoquinone diazide, manufactured by Toyo Gosei Co., Ltd.)
DBA: 9,10-dibutoxyanthracene (manufactured by Kawasaki Kasei Co., Ltd., sensitizer)
(D) Solvent NMP: N-methyl-2-pyrrolidone (E) compound (compound having a group in which at least a part of the acid group is protected with an acid-decomposable group)
E-1: The following compound, molecular weight 494 (protecting the phenolic hydroxyl group of 9,9-bis (4-hydroxyphenyl) fluorene (manufactured by JFE Chemical) with ethyl vinyl ether according to a conventional method)
Figure JPOXMLDOC01-appb-C000059
(F) Crosslinking agent F-1: JER157S65 (Epoxy crosslinking agent: manufactured by Japan Epoxy Resin Co., Ltd.)
F-2: JER157S70 (Epoxy crosslinking agent: manufactured by Japan Epoxy Resin Co., Ltd.)
F-3: JER1007K (Epoxy crosslinking agent: manufactured by Japan Epoxy Resin Co., Ltd.)
(G) Adhesion promoter G-1: γ-glycidoxypropyltrialkoxysilane (KBM-403: manufactured by Shin-Etsu Chemical Co., Ltd.)
(H) Surfactant H-1: Perfluoroalkyl group-containing nonionic surfactant (F-554: manufactured by DIC)
<<C-3の合成>>
 2-ナフトール(10g)、クロロベンゼン(30mL)の懸濁溶液に塩化アルミニウム(10.6g)、2-クロロプロピオニルクロリド(10.1g)を添加し、混合液を40℃に加熱して2時間反応させた。氷冷下、反応液に4NHCl水溶液(60mL)を滴下し、酢酸エチル(50mL)を添加して分液した。有機層に炭酸カリウム(19.2g)を加え、40℃で1時間反応させた後、2NHCl水溶液(60mL)を添加して分液し、有機層を濃縮後、結晶をジイソプロピルエーテル(10mL)でリスラリーし、ろ過、乾燥してケトン化合物(6.5g)を得た。
 得られたケトン化合物(3.0g)、メタノール(30mL)の懸濁溶液に酢酸(7.3g)、50質量%ヒドロキシルアミン水溶液(8.0g)を添加し、加熱還流した。放冷後、水(50mL)を加え、析出した結晶をろ過、冷メタノール洗浄後、乾燥してオキシム化合物(2.4g)を得た。
 得られたオキシム化合物(1.8g)をアセトン(20mL)に溶解させ、氷冷下トリエチルアミン(1.5g)、p-トルエンスルホニルクロリド(2.4g)を添加し、室温に昇温して1時間反応させた。反応液に水(50mL)を添加し、析出した結晶をろ過後、メタノール(20mL)でリスラリーし、ろ過、乾燥してC-3の化合物(上述の構造)(2.3g)を得た。
 なお、B-3のH-NMRスペクトル(300MHz、CDCl)は、δ=8.3(d,1H),8.0(d,2H),7.9(d,1H),7.8(d,1H),7.6(dd,1H),7.4(dd,1H)7.3(d,2H),7.1(d.1H),5.6(q,1H),2.4(s,3H),1.7(d,3H)であった。
<< Synthesis of C-3 >>
Aluminum chloride (10.6 g) and 2-chloropropionyl chloride (10.1 g) were added to a suspension of 2-naphthol (10 g) and chlorobenzene (30 mL), and the mixture was heated to 40 ° C. for 2 hours. I let you. Under ice-cooling, 4N HCl aqueous solution (60 mL) was added dropwise to the reaction solution, and ethyl acetate (50 mL) was added for liquid separation. Potassium carbonate (19.2 g) was added to the organic layer, reacted at 40 ° C. for 1 hour, 2N HCl aqueous solution (60 mL) was added and separated, and the organic layer was concentrated, and the crystals were diluted with diisopropyl ether (10 mL). The slurry was reslurried, filtered and dried to obtain a ketone compound (6.5 g).
Acetic acid (7.3 g) and a 50 mass% aqueous hydroxylamine solution (8.0 g) were added to a suspension of the obtained ketone compound (3.0 g) and methanol (30 mL), and the mixture was heated to reflux. After allowing to cool, water (50 mL) was added, and the precipitated crystals were filtered, washed with cold methanol, and dried to obtain an oxime compound (2.4 g).
The obtained oxime compound (1.8 g) was dissolved in acetone (20 mL), triethylamine (1.5 g) and p-toluenesulfonyl chloride (2.4 g) were added under ice cooling, and the temperature was raised to room temperature. Reacted for hours. Water (50 mL) was added to the reaction solution, and the precipitated crystals were filtered, reslurried with methanol (20 mL), filtered and dried to obtain a compound of C-3 (the above structure) (2.3 g).
Note that the 1 H-NMR spectrum (300 MHz, CDCl 3 ) of B-3 is δ = 8.3 (d, 1H), 8.0 (d, 2H), 7.9 (d, 1H), 7. 8 (d, 1H), 7.6 (dd, 1H), 7.4 (dd, 1H) 7.3 (d, 2H), 7.1 (d.1H), 5.6 (q, 1H) , 2.4 (s, 3H), 1.7 (d, 3H).
<<C-4の合成>>
 1-アミノ-2-ナフトール塩酸塩(東京化成製)4.0gをN-メチルピロリドン(和光純薬工業(株)製)16gに懸濁させ、炭酸水素ナトリウム(和光純薬工業(株)製)3.4gを添加後、4,4-ジメチル-3-オキソ吉草酸メチル(和光純薬工業(株)製)4.9gを滴下し、窒素雰囲気下120℃で2時間加熱した。放冷後、反応混合液に水、酢酸エチルを添加して分液し、有機相を硫酸マグネシウムで乾燥し、ろ過、濃縮して粗C-1-2Aを得た。粗B-1-2Aをシリカゲルカラムクロマトグラフィー精製して、中間体C-1-2Aを1.7g得た。
 C-1-2A(1.7g)とp-キシレン(6mL)を混合し、p-トルエンスルホン酸一水和物(和光純薬工業(株)製)0.23gを添加して140℃で2時間加熱した。放冷後、反応混合液に水、酢酸エチルを添加して分液し、有機相を硫酸マグネシウムで乾燥後、ろ過、濃縮して粗C-1-2Bを得た。
 テトラヒドロフラン(THF)(2mL)と粗C-1-2B全量を混合し、氷冷下2M塩酸/THF溶液6.0mL、次いで亜硝酸イソペンチル(和光純薬工業(株)製)(0.84g)を滴下し、室温まで昇温後2時間攪拌した。得られた反応混合物に水、酢酸エチルを添加して分液し、有機層を水で洗浄後、硫酸マグネシウムで乾燥し、ろ過、濃縮して中間体粗C-1-2Cを得た。
 中間体粗C-1-2C全量をアセトン(10mL)と混合し、氷冷下でトリエチルアミン(和光純薬工業(株)製)(1.2g)、p-トルエンスルホニルクロリド(東京化成製)(1.4g)を添加後、室温まで昇温して1時間攪拌した。得られた反応混合液に水、酢酸エチルを添加して分液し、有機相を硫酸マグネシウムで乾燥後、ろ過、濃縮して粗C-4を得た。粗C-4を冷メタノールでリスラリー後、ろ過、乾燥してC-4(1.2g)を得た。
 C-4のH-NMRスペクトル(300MHz、CDCl)は、δ=8.5-8.4(m,1H),8.0-7.9(m,4H),7.7-7.6(m,2H),7.6-7.5(m,1H),7.4(d.2H),2.4(s,3H),1.4(s,9H)であった。
<< Synthesis of C-4 >>
4.0 g of 1-amino-2-naphthol hydrochloride (manufactured by Tokyo Chemical Industry) is suspended in 16 g of N-methylpyrrolidone (manufactured by Wako Pure Chemical Industries, Ltd.) and sodium hydrogen carbonate (manufactured by Wako Pure Chemical Industries, Ltd.). ) After adding 3.4 g, 4.9 g of methyl 4,4-dimethyl-3-oxovalerate (manufactured by Wako Pure Chemical Industries, Ltd.) was added dropwise and heated at 120 ° C. for 2 hours in a nitrogen atmosphere. After allowing to cool, water and ethyl acetate were added to the reaction mixture and the phases were separated. The organic phase was dried over magnesium sulfate, filtered and concentrated to obtain crude C-1-2A. Crude B-1-2A was purified by silica gel column chromatography to obtain 1.7 g of intermediate C-1-2A.
C-1-2A (1.7 g) and p-xylene (6 mL) were mixed, and 0.23 g of p-toluenesulfonic acid monohydrate (manufactured by Wako Pure Chemical Industries, Ltd.) was added at 140 ° C. Heated for 2 hours. After allowing to cool, water and ethyl acetate were added to the reaction mixture and the phases were separated. The organic phase was dried over magnesium sulfate, filtered and concentrated to give crude C-1-2B.
Tetrahydrofuran (THF) (2 mL) and the whole amount of crude C-1-2B were mixed, 2 mL hydrochloric acid / THF solution 6.0 mL under ice-cooling, then isopentyl nitrite (manufactured by Wako Pure Chemical Industries, Ltd.) (0.84 g) Was added dropwise, and the mixture was warmed to room temperature and stirred for 2 hours. Water and ethyl acetate were added to the obtained reaction mixture for liquid separation, and the organic layer was washed with water, dried over magnesium sulfate, filtered and concentrated to obtain a crude intermediate C-1-2C.
The total amount of the intermediate crude C-1-2C was mixed with acetone (10 mL), and triethylamine (Wako Pure Chemical Industries, Ltd.) (1.2 g), p-toluenesulfonyl chloride (Tokyo Chemical Industry) After adding 1.4 g), the mixture was warmed to room temperature and stirred for 1 hour. Water and ethyl acetate were added to the obtained reaction mixture, and the phases were separated. The organic phase was dried over magnesium sulfate, filtered and concentrated to obtain crude C-4. Crude C-4 was reslurried with cold methanol, filtered and dried to obtain C-4 (1.2 g).
The 1 H-NMR spectrum (300 MHz, CDCl 3 ) of C-4 is δ = 8.5-8.4 (m, 1H), 8.0-7.9 (m, 4H), 7.7-7. .6 (m, 2H), 7.6-7.5 (m, 1H), 7.4 (d. 2H), 2.4 (s, 3H), 1.4 (s, 9H) .
<<C-5の合成>>
 攪拌器および温度計を装着したセパラブルフラスコにN―ヒドロキシナフタルイミドナトリウム塩 33.6g、4―ジメチルアミノピリジン 0.72g、テトラヒドロフラン 300ミリリットルを仕込み、室温25℃下で攪拌し溶解させた。次いで、(+)10―カンファースルホニルクリライド 42gを加えて3時間攪拌した後、トリエチルアミン 15gを加えた後、室温下で10時間攪拌した。次いで、蒸留水 300ミリリットル中に反応溶液を入れ、析出した沈殿をろ別した。この沈殿をアセトンとヘキサンを用いて再沈殿処理を数回繰り返し、N―カンファースルホニルオキシ-1,8-ナフタルイミドを12g得た。
<< Synthesis of C-5 >>
A separable flask equipped with a stirrer and a thermometer was charged with 33.6 g of N-hydroxynaphthalimide sodium salt, 0.72 g of 4-dimethylaminopyridine, and 300 ml of tetrahydrofuran, and dissolved by stirring at room temperature of 25 ° C. Next, 42 g of (+) 10-camphorsulfonyl chloride was added and stirred for 3 hours, and then 15 g of triethylamine was added, followed by stirring at room temperature for 10 hours. Subsequently, the reaction solution was put into 300 ml of distilled water, and the deposited precipitate was separated by filtration. This precipitation was reprecipitated several times with acetone and hexane to obtain 12 g of N-camphorsulfonyloxy-1,8-naphthalimide.
<有機EL表示装置の作製>
(実施例100)
 薄膜トランジスター(TFT)を用いた有機EL表示装置を以下の方法で作製した(図3参照)。
 ガラス基板6上にボトムゲート型のTFT1を形成し、このTFT1を覆う状態でSi34から成る絶縁膜3を形成した。次に、この絶縁膜3に、ここでは図示を省略したコンタクトホールを形成した後、このコンタクトホールを介してTFT1に接続される配線2(高さ1.0μm)を絶縁膜3上に形成した。この配線2は、TFT1間または、後の工程で形成される有機EL素子とTFT1とを接続するためのものである。
<Production of organic EL display device>
(Example 100)
An organic EL display device using a thin film transistor (TFT) was produced by the following method (see FIG. 3).
A bottom gate type TFT 1 was formed on a glass substrate 6, and an insulating film 3 made of Si 3 N 4 was formed so as to cover the TFT 1. Next, a contact hole (not shown) is formed in the insulating film 3, and then a wiring 2 (height 1.0 μm) connected to the TFT 1 through the contact hole is formed on the insulating film 3. . The wiring 2 is used to connect the TFT 1 with an organic EL element formed between TFTs 1 or in a later process.
 さらに、配線2の形成による凹凸を平坦化するために、配線2による凹凸を埋め込む状態で絶縁膜3上へ平坦化膜4を形成した。絶縁膜3上への平坦化膜4の形成は、実施例1の感光性樹脂組成物を基板上にスピン塗布し、ホットプレート上でプリベーク(90℃/120秒)した後、マスク上から高圧水銀灯を用いてi線(365nm)を45mJ/cm2(エネルギー強度20mW/cm2)照射した後、90℃ホットプレート上で90℃、120秒の加熱処理を行った後、アルカリ水溶液(0.4%のTMAH水溶液)にて現像してパターンを形成し、超高圧水銀灯を用いて積算照射量が300mJ/cm2(エネルギー強度:20mW/cm2、i線)となるように全面露光し、300℃/60分間の加熱処理を行った。
 感光性樹脂組成物を塗布する際の塗布性は良好で、露光、現像、焼成の後に得られた硬化膜には、しわやクラックの発生は認められなかった。さらに、配線2の平均段差は500nm、作製した平坦化膜4の膜厚は2,000nmであった。
Further, in order to flatten the unevenness due to the formation of the wiring 2, the planarizing film 4 was formed on the insulating film 3 in a state where the unevenness due to the wiring 2 was embedded. The planarizing film 4 is formed on the insulating film 3 by spin-coating the photosensitive resin composition of Example 1 on a substrate, pre-baking (90 ° C./120 seconds) on a hot plate, and then applying high pressure from above the mask. After irradiating i-line (365 nm) with 45 mJ / cm 2 (energy intensity 20 mW / cm 2 ) using a mercury lamp, heat treatment was performed on a 90 ° C. hot plate at 90 ° C. for 120 seconds, and then an alkaline aqueous solution (0. 4% TMAH aqueous solution) to form a pattern, and using an ultra-high pressure mercury lamp, the whole surface is exposed so that the integrated irradiation amount is 300 mJ / cm 2 (energy intensity: 20 mW / cm 2 , i-line), Heat treatment at 300 ° C./60 minutes was performed.
The applicability when applying the photosensitive resin composition was good, and no wrinkles or cracks were observed in the cured film obtained after exposure, development and baking. Furthermore, the average step of the wiring 2 was 500 nm, and the thickness of the prepared planarizing film 4 was 2,000 nm.
 次に、得られた平坦化膜4上に、ボトムエミッション型の有機EL素子を形成した。まず、平坦化膜4上に、ITOからなる第一電極5を、コンタクトホール7を介して配線2に接続させて形成した。その後、レジストを塗布、プリベークし、所望のパターンのマスクを介して露光し、加熱処理し、現像した。このレジストパターンをマスクとして、ITOエッチャント用いたウエットエッチングによりパターン加工を行った。その後、レジスト剥離液(リムーバ100、AZエレクトロニックマテリアルズ社製)を用いて上記レジストパターンを50℃で剥離した。こうして得られた第一電極5は、有機EL素子の陽極に相当する。 Next, a bottom emission type organic EL element was formed on the obtained flattening film 4. First, a first electrode 5 made of ITO was formed on the planarizing film 4 so as to be connected to the wiring 2 through the contact hole 7. Thereafter, a resist was applied, pre-baked, exposed through a mask having a desired pattern, heat-treated, and developed. Using this resist pattern as a mask, pattern processing was performed by wet etching using an ITO etchant. Thereafter, the resist pattern was stripped at 50 ° C. using a resist stripper (remover 100, manufactured by AZ Electronic Materials). The first electrode 5 thus obtained corresponds to the anode of the organic EL element.
 次に、第一電極5の周縁を覆う形状の絶縁膜8を形成した。絶縁膜8には、実施例3の感光性樹脂組成物を用い、上記と同様の方法で絶縁膜8を形成した。この絶縁膜8を設けることによって、第一電極5とこの後の工程で形成する第二電極との間のショートを防止することができる。 Next, an insulating film 8 having a shape covering the periphery of the first electrode 5 was formed. As the insulating film 8, the photosensitive resin composition of Example 3 was used, and the insulating film 8 was formed by the same method as described above. By providing this insulating film 8, it is possible to prevent a short circuit between the first electrode 5 and the second electrode formed in the subsequent process.
 さらに、真空蒸着装置内で所望のパターンマスクを介して、正孔輸送層、有機発光層、電子輸送層を順次蒸着して設けた。次いで、基板上方の全面にAlから成る第二電極を形成した。得られた上記基板を蒸着機から取り出し、封止用ガラス板と紫外線硬化型エポキシ樹脂を用いて貼り合わせることで封止した。 Further, a hole transport layer, an organic light emitting layer, and an electron transport layer were sequentially deposited through a desired pattern mask in a vacuum deposition apparatus. Next, a second electrode made of Al was formed on the entire surface above the substrate. The obtained board | substrate was taken out from the vapor deposition machine, and it sealed by bonding together using the glass plate for sealing, and an ultraviolet curable epoxy resin.
 以上のようにして、各有機EL素子にこれを駆動するためのTFT1が接続してなるアクティブマトリックス型の有機EL表示装置が得られた。駆動回路を介して電圧を印加したところ、良好な表示特性を示し、信頼性の高い有機EL表示装置であることが分かった。 As described above, an active matrix type organic EL display device in which each organic EL element is connected to the TFT 1 for driving it was obtained. When a voltage was applied via the drive circuit, it was found that the organic EL display device showed good display characteristics and high reliability.
(実施例101)
 特開2007-328210号公報の図1に記載の液晶表示装置において、有機絶縁膜PASを以下の方法で形成し、液晶表示装置を得た。
 先ず、特開2007-328210号公報に従って、特開2007-328210号公報の図1に記載の液晶表示装置の有機絶縁膜PAS直前まで形成したアレイ基板を作製した。
 次に、この基板をHMDS蒸気下に30秒曝し、その後、実施例1の感光性樹脂組成物をスリット塗布した後、90℃で2分ホットプレート上でプリベークして溶剤を揮発させ、所定膜厚の感光性樹脂組成物層を形成した。
 次に、得られた感光性樹脂組成物層を、キヤノン(株)製 MPA 7800CFを用いて、直径5μmのホールパターンのマスクを介して最適露光量mJ/cm(エネルギー強度:20mW/cm、i線)露光し、80℃/90秒ホットプレート上で加熱した。そして、露光後の樹脂組成物層を、アルカリ現像液(0.6%のテトラメチルアンモニウムヒドロキシド水溶液)で現像した後、超純水でリンスした。続いて超高圧水銀灯を用いて積算照射量が300mJ/cm(エネルギー強度:20mW/cm、i線で計測)となるように全面露光し、その後、この基板をオーブンにて300℃で60分加熱して有機絶縁膜PASを得た。
 以降は特開2007-328210号公報に従って液晶表示装置を得た。なお、本実施例ではPASに耐熱性の高い材料を用いているため、層間絶縁膜IN3を層間絶縁膜IN2と同等の温度で製膜した。これによりIN3を緻密な膜とすることができた。
 得られた液晶表示装置に対して、駆動電圧を印加したところ、非常に良好な表示特性を示し、信頼性の高い液晶表示装置であることが分かった。
(Example 101)
In the liquid crystal display device described in FIG. 1 of JP-A-2007-328210, the organic insulating film PAS was formed by the following method to obtain a liquid crystal display device.
First, according to Japanese Patent Application Laid-Open No. 2007-328210, an array substrate formed until just before the organic insulating film PAS of the liquid crystal display device described in FIG.
Next, this substrate was exposed to HMDS vapor for 30 seconds, and then the photosensitive resin composition of Example 1 was slit-coated and then pre-baked on a hot plate at 90 ° C. for 2 minutes to volatilize the solvent. A thick photosensitive resin composition layer was formed.
Next, the obtained photosensitive resin composition layer was subjected to an optimum exposure dose mJ / cm 2 (energy intensity: 20 mW / cm 2) through a hole pattern mask having a diameter of 5 μm using MPA 7800CF manufactured by Canon Inc. , I-line) Exposed and heated on a hot plate at 80 ° C. for 90 seconds. The exposed resin composition layer was developed with an alkali developer (0.6% tetramethylammonium hydroxide aqueous solution), and then rinsed with ultrapure water. Subsequently, the entire surface was exposed using an ultra-high pressure mercury lamp so that the integrated irradiation amount was 300 mJ / cm 2 (energy intensity: 20 mW / cm 2 , measured with i-line), and then the substrate was heated at 300 ° C. in an oven at 60 ° C. The organic insulating film PAS was obtained by heating for a few minutes.
Thereafter, a liquid crystal display device was obtained according to Japanese Patent Application Laid-Open No. 2007-328210. In this embodiment, since a material having high heat resistance is used for PAS, the interlayer insulating film IN3 is formed at the same temperature as the interlayer insulating film IN2. Thereby, IN3 could be made into a dense film.
When a driving voltage was applied to the obtained liquid crystal display device, it was found that the liquid crystal display device showed very good display characteristics and had high reliability.
<タッチパネルの作製>
(実施例102)
 以下に述べる方法によりタッチパネル表示装置を作製した。
<第一の透明電極パターンの形成>
<<透明電極層の形成>>
 あらかじめ額縁層が形成された強化処理ガラス(300mm×400mm×0.7mm)の前面板を、真空チャンバー内に導入し、SnO2含有率が10質量%のITOターゲット(インジウム:錫=95:5(モル比))を用いて、DCマグネトロンスパッタリング(条件:基材の温度250℃、アルゴン圧0.13Pa、酸素圧0.01Pa)により、厚さ40nmのITO薄膜を形成し、透明電極層を形成した前面板を得た。ITO薄膜の表面抵抗は80Ω/□であった。
<Production of touch panel>
(Example 102)
A touch panel display device was produced by the method described below.
<Formation of first transparent electrode pattern>
<< Formation of transparent electrode layer >>
A front plate of tempered glass (300 mm × 400 mm × 0.7 mm) with a frame layer formed in advance is introduced into a vacuum chamber, and an ITO target (indium: tin = 95: 5) with a SnO 2 content of 10% by mass. (Molar ratio)) was used to form an ITO thin film having a thickness of 40 nm by DC magnetron sputtering (conditions: substrate temperature 250 ° C., argon pressure 0.13 Pa, oxygen pressure 0.01 Pa), and a transparent electrode layer was formed. A formed front plate was obtained. The surface resistance of the ITO thin film was 80Ω / □.
 次いで、市販のエッチングレジストをITO上に塗布・乾燥し、エッチングレジスト層を形成した。露光マスク(透明電極パターンを有す石英露光マスク)面とエッチングレジスト層との間の距離を100μmに設定し、露光量50mJ/cm2(i線)でパターン露光したのち、現像液で現像を行い、更に130℃30分間のポストベーク処理を行って、透明電極層とエッチング用光感光性樹脂層パターンとを形成した前面板を得た。 Next, a commercially available etching resist was applied onto ITO and dried to form an etching resist layer. The distance between the exposure mask (quartz exposure mask having a transparent electrode pattern) surface and the etching resist layer is set to 100 μm, pattern exposure is performed at an exposure amount of 50 mJ / cm 2 (i-line), and development is performed with a developer. Then, a post-baking treatment at 130 ° C. for 30 minutes was performed to obtain a front plate on which a transparent electrode layer and a photosensitive resin layer pattern for etching were formed.
 透明電極層とエッチング用光感光性樹脂層パターンとを形成した前面板を、ITOエッチャント(塩酸、塩化カリウム水溶液。液温30℃)を入れたエッチング槽に浸漬し、100秒処理し、エッチングレジスト層で覆われていない露出した領域の透明電極層を溶解除去し、エッチングレジスト層パターンのついた透明電極層パターン付の前面板を得た。
 次に、エッチングレジスト層パターンのついた透明電極層パターン付の前面板を、専用のレジスト剥離液に浸漬し、エッチング用光感光性樹脂層を除去し、額縁層と第一の透明電極パターンとを形成した前面板を得た。
The front plate on which the transparent electrode layer and the photo-sensitive resin layer pattern for etching are formed is immersed in an etching tank containing ITO etchant (hydrochloric acid, potassium chloride aqueous solution, liquid temperature 30 ° C.), treated for 100 seconds, and etched resist. The exposed transparent electrode layer not covered with the layer was dissolved and removed to obtain a front plate with a transparent electrode layer pattern with an etching resist layer pattern.
Next, the transparent electrode layer-patterned front plate with the etching resist layer pattern is immersed in a dedicated resist stripping solution, the etching photosensitive resin layer is removed, and the frame layer and the first transparent electrode pattern A front plate formed was obtained.
<<絶縁層の形成>>
 額縁層と第一の透明電極パターンとを形成した前面板の上に、実施例1の感光性樹脂組成物を塗布・乾燥(膜厚1μm、90℃120秒)し、感光性樹脂組成物層を得た。露光マスク(絶縁層用パターンを有す石英露光マスク)面と感光性樹脂組成物層との間の距離を30μmに設定し、感度評価で求めた最適露光量でパターン露光した。
 次に、90℃、2分ホットプレート上で加熱処理した後、2.38質量%のテトラメチルアンモニウムヒドロキシド水溶液により23℃で15秒間液盛り法にて現像し、更に超純水で10秒間リンスした。続いて300℃60分のポストベーク処理を行って、額縁層、第一の透明電極パターン、絶縁層パターンを形成した前面板を得た。
<< Formation of insulating layer >>
On the front plate on which the frame layer and the first transparent electrode pattern were formed, the photosensitive resin composition of Example 1 was applied and dried (film thickness: 1 μm, 90 ° C., 120 seconds) to form a photosensitive resin composition layer. Got. The distance between the surface of the exposure mask (quartz exposure mask having a pattern for insulating layer) and the photosensitive resin composition layer was set to 30 μm, and pattern exposure was performed with the optimum exposure amount obtained by sensitivity evaluation.
Next, after heat treatment at 90 ° C. for 2 minutes on a hot plate, development was performed with a 2.38 mass% tetramethylammonium hydroxide aqueous solution at 23 ° C. for 15 seconds, and further with ultrapure water for 10 seconds. Rinse. Subsequently, post baking was performed at 300 ° C. for 60 minutes to obtain a front plate on which a frame layer, a first transparent electrode pattern, and an insulating layer pattern were formed.
<第二の透明電極パターンの形成>
<<透明電極層の形成>>
 上記第一の透明電極パターンの形成と同様にして、絶縁層パターンまで形成した前面板をDCマグネトロンスパッタリング処理し(条件:基材の温度50℃、アルゴン圧0.13Pa、酸素圧0.01Pa)、厚さ80nmのITO薄膜を形成し、透明電極層を形成した前面板を得た。ITO薄膜の表面抵抗は110Ω/□であった。
 更に、第一の透明電極パターンの形成と同様にして、エッチングし、エッチングレジスト層を除去することにより、額縁層、第一の透明電極パターン、実施例1の感光性樹脂組成物用いて形成した絶縁層パターン、第二の透明電極パターンを形成した前面板を得た。
<Formation of second transparent electrode pattern>
<< Formation of transparent electrode layer >>
In the same manner as the formation of the first transparent electrode pattern, the front plate formed up to the insulating layer pattern was subjected to DC magnetron sputtering treatment (conditions: substrate temperature 50 ° C., argon pressure 0.13 Pa, oxygen pressure 0.01 Pa). An ITO thin film having a thickness of 80 nm was formed to obtain a front plate on which a transparent electrode layer was formed. The surface resistance of the ITO thin film was 110Ω / □.
Furthermore, in the same manner as the formation of the first transparent electrode pattern, etching was performed and the etching resist layer was removed to form the frame layer, the first transparent electrode pattern, and the photosensitive resin composition of Example 1. A front plate on which an insulating layer pattern and a second transparent electrode pattern were formed was obtained.
<第一及び第二の透明電極パターンとは別の導電性要素の形成>
 上記第一、及び、第二の透明電極パターンの形成と同様にして、第一の透明電極パターン、実施例1の感光性樹脂組成物を用いて形成した絶縁層パターン、第二の透明電極パターンを形成した前面板をDCマグネトロンスパッタリング処理し、厚さ200nmのアルミニウム(Al)薄膜を形成した前面板を得た。
 更に、第一の透明電極パターンの形成と同様にして、エッチングし、エッチングレジスト層を除去することにより、額縁層、第一の透明電極パターン、実施例1の感光性樹脂組成物を用いて形成した絶縁層パターン、第二の透明電極パターン、第一及び第二の透明電極パターンとは別の導電性要素を形成した前面板を得た。
<Formation of Conductive Element Different from First and Second Transparent Electrode Pattern>
Similar to the formation of the first and second transparent electrode patterns, the first transparent electrode pattern, the insulating layer pattern formed using the photosensitive resin composition of Example 1, and the second transparent electrode pattern The front plate on which was formed was subjected to DC magnetron sputtering to obtain a front plate on which an aluminum (Al) thin film having a thickness of 200 nm was formed.
Further, etching is performed in the same manner as the formation of the first transparent electrode pattern, and the etching resist layer is removed to form the frame layer, the first transparent electrode pattern, and the photosensitive resin composition of Example 1. A front plate on which conductive elements different from the insulating layer pattern, the second transparent electrode pattern, and the first and second transparent electrode patterns were formed was obtained.
<透明保護層の形成>
 絶縁層の形成と同様にして、上記第一及び第二の透明電極パターンとは別の導電性要素まで形成した前面板に、実施例1の感光性樹脂組成物を塗布・乾燥(膜厚1μm、90℃120秒)し、感光性樹脂組成物膜を得た。更に、露光、加熱処理、現像、ポスト露光(1,000mJ/cm2)、ポストベーク処理を行って、額縁層、第一の透明電極パターン、実施例1の感光性樹脂組成物を用いて形成した絶縁層パターン、第二の透明電極パターン、第一及び第二の透明電極パターンとは別の導電性要素の全てを覆うように実施例1の感光性樹脂組成物を用いて形成した絶縁層(透明保護層)を積層した前面板を得た。
<Formation of transparent protective layer>
In the same manner as the formation of the insulating layer, the photosensitive resin composition of Example 1 was applied and dried (film thickness: 1 μm) on the front plate formed up to the conductive element different from the first and second transparent electrode patterns. , 90 ° C. for 120 seconds) to obtain a photosensitive resin composition film. Further, exposure, heat treatment, development, post-exposure (1,000 mJ / cm 2 ), and post-bake treatment are performed to form the frame layer, the first transparent electrode pattern, and the photosensitive resin composition of Example 1. Insulating layer pattern, second transparent electrode pattern, insulating layer formed using the photosensitive resin composition of Example 1 so as to cover all the conductive elements different from the first and second transparent electrode patterns A front plate laminated with a (transparent protective layer) was obtained.
<タッチパネル表示装置の作製>
 特開2009-47936号公報に記載の方法で製造した液晶表示素子に、先に製造した前面板を貼り合わせ、公知の方法で静電容量方式のタッチパネルを構成要素として備えたタッチパネル表示装置を作製した。
<Production of touch panel display device>
A liquid crystal display device manufactured by the method described in Japanese Patent Laid-Open No. 2009-47936 is bonded to the previously manufactured front plate, and a touch panel display device including a capacitive touch panel as a constituent element is manufactured by a known method. did.
<前面板、及び、タッチパネル表示装置の評価>
 第一の透明電極パターン、第二の透明電極パターン、及び、これらとは別の導電性要素の、各々の導電性には問題がなく、一方で、第一の透明電極パターンと第二の透明電極パターンの間では絶縁性を有しており、タッチパネルとして良好な表示特性が得られた。
<Evaluation of front plate and touch panel display>
There is no problem in the conductivity of each of the first transparent electrode pattern, the second transparent electrode pattern, and other conductive elements, while the first transparent electrode pattern and the second transparent electrode pattern Between the electrode patterns, there was insulation, and good display characteristics as a touch panel were obtained.
 1:TFT、2:配線、3:絶縁膜、4:平坦化膜、5:第一電極、6:ガラス基板、7:コンタクトホール、8:絶縁膜、10:液晶表示装置、12:バックライトユニット、14,15:ガラス基板、16:TFT、17:硬化膜、18:コンタクトホール、19:ITO透明電極、20:液晶、22:カラーフィルター、30:静電容量方式のタッチパネル、31:前面板、32:額縁層、33:第一の透明電極パターン、33a:パッド部分、33b:接続部分、34:第二の透明電極パターン、35:絶縁層、36:導電性要素、37:透明保護層、38:開口部、CT:対向電極、GI:ゲート絶縁膜、GT:ゲート電極、IN1:第1の層間絶縁膜、IN2:第2の層間絶縁膜、IN3:第3の層間絶縁膜、PAS:有機絶縁膜、PS:半導体膜、PX:画素電極、RAL:反射膜、SD1:ドレイン電極、SD2:ソース電極、SUB1:ガラス基板、UC:下地膜 1: TFT, 2: wiring, 3: insulating film, 4: planarization film, 5: first electrode, 6: glass substrate, 7: contact hole, 8: insulating film, 10: liquid crystal display device, 12: backlight Units 14, 15: glass substrate, 16: TFT, 17: cured film, 18: contact hole, 19: ITO transparent electrode, 20: liquid crystal, 22: color filter, 30: capacitive touch panel, 31: front Face plate, 32: Frame layer, 33: First transparent electrode pattern, 33a: Pad portion, 33b: Connection portion, 34: Second transparent electrode pattern, 35: Insulating layer, 36: Conductive element, 37: Transparent protection Layer, 38: opening, CT: counter electrode, GI: gate insulating film, GT: gate electrode, IN1: first interlayer insulating film, IN2: second interlayer insulating film, IN3: third interlayer insulating film, PAS: Organic Film, PS: semiconductor film, PX: pixel electrode, RAL: reflective film, SD1: drain electrode, SD2: source electrode, SUB1: glass substrate, UC: base film

Claims (14)

  1.  酸基および酸基が酸分解性基で保護された基から選ばれる少なくとも1種の基を含有し、塩基によって環化して硬化する樹脂と、
     下記一般式(1)で表される熱塩基発生剤と、
     光酸発生剤と、
     溶剤と、
    を含む、ポジ型感光性樹脂組成物;
    Figure JPOXMLDOC01-appb-C000001
     式中、Rは、水素原子またはn価の有機基を表し、
     R~Rは、それぞれ独立に、水素原子またはアルキル基を表し、
     nは、1以上の整数を表す。
    A resin containing at least one group selected from an acid group and a group in which the acid group is protected by an acid-decomposable group, and curable by cyclization with a base;
    A thermal base generator represented by the following general formula (1);
    A photoacid generator;
    Solvent,
    A positive photosensitive resin composition comprising:
    Figure JPOXMLDOC01-appb-C000001
    In the formula, R 1 represents a hydrogen atom or an n-valent organic group,
    R 2 to R 5 each independently represents a hydrogen atom or an alkyl group,
    n represents an integer of 1 or more.
  2.  前記樹脂が、一般式(2)で表される繰り返し単位を含むポリベンゾオキサゾール前駆体、および、一般式(3)で表される繰り返し単位を含むポリイミド前駆体から選ばれる少なくとも1種である、請求項1に記載のポジ型感光性樹脂組成物;
    Figure JPOXMLDOC01-appb-C000002
     式中、XおよびXは、それぞれ独立に、4価の有機基を表し、
     YおよびYは、それぞれ独立に、2価の有機基を表し、
     RおよびRは、それぞれ独立に、酸分解性基を表し、
     RおよびRは、それぞれ独立に、水素原子、架橋性基、アルキル基、酸分解性基、または、-CORcで表される基を表し、
     Rcは、アルキル基またはアリール基を表す。
    The resin is at least one selected from a polybenzoxazole precursor containing a repeating unit represented by the general formula (2) and a polyimide precursor containing a repeating unit represented by the general formula (3). The positive photosensitive resin composition according to claim 1;
    Figure JPOXMLDOC01-appb-C000002
    In the formula, X 1 and X 2 each independently represent a tetravalent organic group,
    Y 1 and Y 2 each independently represent a divalent organic group,
    R 6 and R 8 each independently represents an acid-decomposable group,
    R 7 and R 9 each independently represent a hydrogen atom, a crosslinkable group, an alkyl group, an acid-decomposable group, or a group represented by —CORc,
    Rc represents an alkyl group or an aryl group.
  3.  前記樹脂が、一般式(4)で表される繰り返し単位を含むポリベンゾオキサゾール前駆体、および、一般式(5)で表される繰り返し単位を含むポリイミド前駆体から選ばれる少なくとも1種である、請求項1に記載のポジ型感光性樹脂組成物;
    Figure JPOXMLDOC01-appb-C000003
     式中、XおよびXは、それぞれ独立に、4価の有機基を表し、
     YおよびYは、それぞれ独立に、2価の有機基を表し、
     R10およびR12は、水素原子を表し、
     R11およびR13は、それぞれ独立に、水素原子、架橋性基、アルキル基、または、-CORcで表される基を表し、
     Rcは、アルキル基またはアリール基を表す。
    The resin is at least one selected from a polybenzoxazole precursor containing a repeating unit represented by the general formula (4) and a polyimide precursor containing a repeating unit represented by the general formula (5). The positive photosensitive resin composition according to claim 1;
    Figure JPOXMLDOC01-appb-C000003
    In the formula, X 3 and X 4 each independently represent a tetravalent organic group,
    Y 3 and Y 4 each independently represent a divalent organic group,
    R 10 and R 12 represent a hydrogen atom,
    R 11 and R 13 each independently represent a hydrogen atom, a crosslinkable group, an alkyl group, or a group represented by —CORc,
    Rc represents an alkyl group or an aryl group.
  4.  更に、酸基の少なくとも一部が酸分解性基で保護された基を有する化合物を含む、請求項3に記載のポジ型感光性樹脂組成物。 Furthermore, the positive photosensitive resin composition of Claim 3 containing the compound which has a group in which at least one part of the acid group was protected by the acid-decomposable group.
  5.  前記酸基の少なくとも一部が酸分解性基で保護された基を有する化合物が、下記一般式(E1)で表される化合物である、請求項4に記載のポジ型感光性樹脂組成物;
    Figure JPOXMLDOC01-appb-C000004
     式中、R21は、1~6価の有機基を表し、
     R22およびR23は、それぞれ独立に、水素原子、アルキル基またはアリール基を表し、
     R22およびR23のいずれか一方はアルキル基またはアリール基であり、
     R24は、アルキル基またはアリール基を表し、R24は、R22またはR23と結合して環状エーテル構造を形成していてもよく、
     n1は1~6の整数を表す。
    The positive photosensitive resin composition according to claim 4, wherein the compound having a group in which at least a part of the acid group is protected with an acid-decomposable group is a compound represented by the following general formula (E1);
    Figure JPOXMLDOC01-appb-C000004
    In the formula, R 21 represents a monovalent to hexavalent organic group,
    R 22 and R 23 each independently represents a hydrogen atom, an alkyl group or an aryl group,
    Any one of R 22 and R 23 is an alkyl group or an aryl group;
    R 24 represents an alkyl group or an aryl group, R 24 may be bonded to R 22 or R 23 to form a cyclic ether structure;
    n1 represents an integer of 1 to 6.
  6.  前記一般式(1)において、nが1であり、Rがアリール基である、請求項1~5のいずれか1項に記載のポジ型感光性樹脂組成物。 6. The positive photosensitive resin composition according to claim 1, wherein in the general formula (1), n is 1 and R 1 is an aryl group.
  7.  前記樹脂が、ポリベンゾオキサゾール前駆体である、請求項1~6のいずれか1項に記載のポジ型感光性樹脂組成物。 The positive photosensitive resin composition according to any one of claims 1 to 6, wherein the resin is a polybenzoxazole precursor.
  8.  請求項1~7のいずれか1項に記載のポジ型感光性樹脂組成物を基板に塗布する工程と、
     塗布されたポジ型感光性樹脂組成物から溶剤を除去する工程と、
     溶剤が除去されたポジ型感光性樹脂組成物を活性放射線で露光する工程と、
     露光されたポジ型感光性樹脂組成物を現像液により現像する工程と、
     現像されたポジ型感光性樹脂組成物を熱硬化する工程とを含む硬化膜の製造方法。
    Applying the positive photosensitive resin composition according to any one of claims 1 to 7 to a substrate;
    Removing the solvent from the applied positive photosensitive resin composition;
    Exposing the positive photosensitive resin composition from which the solvent has been removed with actinic radiation;
    Developing the exposed positive photosensitive resin composition with a developer;
    And a step of thermally curing the developed positive photosensitive resin composition.
  9.  前記現像する工程の後、かつ前記熱硬化する工程の前に、前記現像されたポジ型感光性樹脂組成物を露光する工程を含む、請求項8に記載の硬化膜の製造方法。 The method for producing a cured film according to claim 8, comprising a step of exposing the developed positive photosensitive resin composition after the developing step and before the thermosetting step.
  10.  請求項1~7のいずれか1項に記載のポジ型感光性樹脂組成物を硬化してなる硬化膜。 A cured film obtained by curing the positive photosensitive resin composition according to any one of claims 1 to 7.
  11.  層間絶縁膜である、請求項10に記載の硬化膜。 The cured film according to claim 10, which is an interlayer insulating film.
  12.  請求項10または11に記載の硬化膜を有する、液晶表示装置。 A liquid crystal display device having the cured film according to claim 10 or 11.
  13.  請求項10または11に記載の硬化膜を有する、有機エレクトロルミネッセンス表示装置。 An organic electroluminescence display device comprising the cured film according to claim 10 or 11.
  14.  請求項10または11に記載の硬化膜を有する、タッチパネル。 A touch panel having the cured film according to claim 10 or 11.
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