CN115188866A - Vertical light-emitting diode structure - Google Patents
Vertical light-emitting diode structure Download PDFInfo
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- CN115188866A CN115188866A CN202110359542.8A CN202110359542A CN115188866A CN 115188866 A CN115188866 A CN 115188866A CN 202110359542 A CN202110359542 A CN 202110359542A CN 115188866 A CN115188866 A CN 115188866A
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- carrier
- layer
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- emitting diode
- metal
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- 239000002184 metal Substances 0.000 claims abstract description 61
- 229910052751 metal Inorganic materials 0.000 claims abstract description 61
- 238000002161 passivation Methods 0.000 claims abstract description 19
- 239000013078 crystal Substances 0.000 claims abstract description 14
- 238000009413 insulation Methods 0.000 claims abstract description 14
- 238000003466 welding Methods 0.000 claims abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052737 gold Inorganic materials 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 10
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052681 coesite Inorganic materials 0.000 claims description 7
- 229910052906 cristobalite Inorganic materials 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims description 7
- 229910052682 stishovite Inorganic materials 0.000 claims description 7
- 229910052905 tridymite Inorganic materials 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 239000000463 material Substances 0.000 claims 2
- 239000010410 layer Substances 0.000 abstract description 82
- 238000000034 method Methods 0.000 abstract description 16
- 238000009713 electroplating Methods 0.000 abstract description 8
- 239000000126 substance Substances 0.000 abstract description 8
- 238000007747 plating Methods 0.000 abstract description 5
- 239000011241 protective layer Substances 0.000 abstract description 5
- 239000011248 coating agent Substances 0.000 abstract description 4
- 238000000576 coating method Methods 0.000 abstract description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910021645 metal ion Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000007772 electroless plating Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000012858 packaging process Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000009422 external insulation Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 238000001883 metal evaporation Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention relates to a vertical light-emitting diode structure, which comprises a light-emitting diode element, a side wall insulating layer, a welding electrode and a metal protective layer, wherein the metal protective layer is mainly electrically connected with the welding electrode, and the metal protective layer covers and protects the side edge of a crystal grain and the side edge of a carrier plate of the light-emitting diode element through the side wall insulating layer; therefore, through the coating protection of the metal protection layer, the problem of potential failure of the side wall insulation layer (Passivation) in the electroplating or chemical plating process and other harsh environments of the light emitting diode element can be solved, the metal protection layer can provide a test contact, and the quality of the side wall insulation layer is evaluated by detecting the forward bias voltage (Vf) and the reverse leakage current (Ir) of the light emitting diode element.
Description
Technical Field
The present invention relates to a light emitting diode structure, and more particularly, to a vertical light emitting diode structure having a testable and sidewall-protected metal layer.
Background
The crystal grain structure of the conventional vertical light emitting diode comprises an N-type semiconductor layer, a light emitting layer and a P-type semiconductor layer which form a sandwich structure, wherein a reflecting layer (Mirror layer), a Buffer layer (Buffer layer), a combining layer, a silicon substrate and a P-type electrode are sequentially arranged below the P-type semiconductor layer, the surface of the N-type semiconductor layer can be roughened to increase the light emergence rate, and an N-type electrode is arranged.
When moisture adheres to the side of the P-N junction of the die of the vertical led or the conductive material adheres, the device may fail after power-on operation, so the vertical led usually has an insulating sidewall layer (Passivation) made of SiO2 with a thickness of 0.1-1 micrometer (um) to protect the P-N junction of the die (chip) and prevent the adhesion of the conductive material and the moisture.
The quality of the coating film on the insulating sidewall layer of the vertical light emitting diode is difficult to control and confirm, and microcracks often occur, but under bad process conditions, even if the thickness is increased, the quality is not improved, and the block separation (Peeling) is caused. However, the conventional vertical light emitting diode is mostly fabricated by die bonding and wire bonding processes, and thus has little influence. When the vertical light-emitting diode completes the packaging process, the crystal grains of the vertical light-emitting diode are better protected, and the quality of the coating film of the insulating side wall layer is hardly influenced.
However, when the subsequent packaging process involves a severe process such as electroplating or electroless plating, if the defective die protected by the insulating sidewall layer is placed in the electroplating or electroless plating process, the metal ions in the electrolyte will enter and attach to the P-N junction through the micro-cracks, which will cause the failure of the vertical light emitting diode during the subsequent process, and the reliability will be reduced, which will cause a great increase in cost and product risk.
Disclosure of Invention
Accordingly, the present invention is directed to a vertical light emitting diode structure with a metal layer covering thereon, wherein the metal layer can be used to detect the compactness and quality of an external insulation layer at the P-N junctions of four sides of a die (chip) of the vertical light emitting diode structure. Meanwhile, the stable metal layer can also prevent the adhesion of potential moisture in the subsequent process and prevent the conductive material from adhering to the P-N junction.
The invention relates to a vertical light-emitting diode structure, which comprises a light-emitting diode element, a side wall insulating layer, a welding electrode and a metal protective layer, wherein the light-emitting diode element comprises a conductive carrier plate and a light-emitting diode crystal grain, and the light-emitting diode crystal grain is formed on the conductive carrier plate. The LED die has a die top edge and a die side edge, wherein the die side edge is connected to the die top edge and surrounds the LED die.
The conductive carrier has a carrier side edge and a carrier top edge, the carrier side edge is connected to the die side edge, the carrier top edge is connected to the carrier side edge and no led die is located above the carrier top edge. The side wall insulating layer covers the upper edge of the crystal grain, the side edge of the crystal grain and the side edge of the carrier plate, and the side wall insulating layer is provided with a first electrode exposed area at the upper edge of the crystal grain, and the first electrode exposed area exposes the light-emitting diode crystal grain.
The welding electrode penetrates through the exposed area of the first electrode and is electrically connected with the light-emitting diode grain. The metal protection layer is electrically connected with the welding electrode, and the metal protection layer covers and protects the side edge of the crystal grain and the side edge of the carrier plate through the side wall insulating layer.
Accordingly, the invention covers the upper edge of the die, the side edge of the die and the side edge of the carrier plate through the metal protection layer, thereby preventing moisture and conductive substances from being adhered to the P-N junction of the LED element.
And a good barrier layer is formed by the fine and compact film coating layer of the metal protective layer, so that the problem of potential failure of the side wall insulating layer of the light-emitting diode element in the electroplating or chemical plating process and other severe environment processes can be solved.
The metal passivation layer can provide a test contact for evaluating the quality of the sidewall insulating layer by detecting the forward bias voltage (Vf) and the reverse leakage current (Ir) of the led device.
More specifically, the metal protection layer is applied outside the sidewall insulation layer by depositing a metal film (such as metal evaporation, metal sputtering, etc.). If the sidewall insulation layer outside the P-N junction has cracks and defects, the deposited metal will penetrate into the sidewall of the P-N junction when the metal protection layer is applied thereafter. At this time, the device will leak or conduct, and the bad device can be detected by the electrical property of the LED crystal grain, so that the device with bad sidewall insulation layer can be eliminated in the crystal grain section. Meanwhile, the metal with better stability can be selected as the metal protection layer, so that the P-N junction side wall of the LED crystal grain is more stable in the subsequent processing.
Drawings
FIG. 1 is a cross-sectional view of a first embodiment of the present invention;
FIG. 2 is a cross-sectional view of a structure of a subsequent process according to a first embodiment of the present invention;
FIG. 3 is a cross-sectional view of a second embodiment of the present invention;
FIG. 4 is a cross-sectional view of a third embodiment of the present invention.
Detailed Description
For a better understanding and appreciation of the features, objects, and advantages of the invention, reference should be made to the following description of the preferred embodiments taken in conjunction with the accompanying drawings, in which:
referring to fig. 1, a cross-sectional view of a vertical light emitting diode structure according to a first embodiment of the present invention is shown, which includes a light emitting diode device 10, a sidewall insulating layer 40, a bonding electrode 50, and a metal passivation layer 60.
The led device 10 includes a conductive carrier 20 and an led die 30, wherein the led die 30 is formed on the conductive carrier 20. The led die 30 has a die top edge 301 and a die side edge 302, the die side edge 302 connecting the die top edge 301 and surrounding the led die 30. The conductive carrier 20 has a carrier side edge 201 and a carrier top edge 202, the carrier side edge 201 is connected to the die side edge 302, the carrier top edge 202 is connected to the carrier side edge 201, and the led die 30 is not located above the carrier top edge 202.
The sidewall insulating layer 40 covers the die top edge 301, the die side edge 302 and the carrier side edge 201, and the sidewall insulating layer 40 has a first electrode exposing region 401 at the die top edge 301, the first electrode exposing region 401 exposes the led die 30, and the sidewall insulating layer 40 has a thickness of about 0.5 micrometer (um).
The bonding electrode 50 is electrically connected to the led die 30 through the first electrode exposed region 401. In one embodiment, the led die 30 may include a first metal contact layer 31, a first electrical type semiconductor layer 32, an active layer 33, and a second electrical type semiconductor layer 34, which are sequentially stacked, and the thickness of the led die 30 is about 3 microns (um). Wherein the bonding electrode 50 is electrically connected to the second electrical type semiconductor layer 34. The conductive carrier 20 includes a metal electrode 21, a conductive block 22 and a metal connection layer 23 stacked in sequence, and the first metal contact layer 31 is formed on the metal connection layer 23.
The metal passivation layer 60 is electrically connected to the bonding electrode 50, and the metal passivation layer 60 covers and protects the die-side edge 302 and the carrier-side edge 201 via the sidewall insulation layer 40, wherein hatching is only drawn for the portion of the metal passivation layer 60 to clearly show the metal passivation layer 60. In practice, the sidewall insulation layer 40 is selected from the group consisting of SiO2, siN/SiO2/SiN, tiO2 and TiO2/SiO2/TiO2, and the metal protection layer 60 is selected from the group consisting of Pt, tiW, cr, pt, au, cuW, cr/Au, al/Cr/Au, ti/Au, ge/Ni/Au, be/Au and Ni/Au. Preferably, the thickness of the metal protection layer 60 is between 0.05 micrometers (um) and 3 micrometers (um). More preferably, the thickness of the metal protection layer 60 is 1.5 micrometers (um).
Referring to FIG. 2, a cross-sectional view of a structure of a subsequent process according to a first embodiment of the present invention is shown. The conductive carrier 20 is formed on a substrate 70, the substrate 70 has a first electrode pad 71 and a second electrode pad 72, the second electrode pad 72 is electrically connected to the conductive carrier 20, and the first electrode pad 71 is electrically connected to the soldering electrode 50. In practice, the first electrode pad 71 is electrically connected to the welding electrode 50 through a metal connection block 73. The metal connection block 73 includes a horizontal portion 731 and a vertical portion 732, the horizontal portion 731 being electrically connected to the bonding electrode 50, and the vertical portion 732 being electrically connected to the first electrode pad 71. And a filling portion 80 may be disposed between the vertical portion 732 and the metal passivation layer 60.
As shown in the embodiment of fig. 2, the metal connection block 73 can be formed by electroplating or chemical plating, which can replace the conventional wire bonding process and is more suitable for mass production. In the electroplating or chemical plating process, the metal protection layer 60 can block moisture and conductive material (metal ions) regardless of whether the sidewall insulation layer 40 has defects (cracks). Before the electroplating or chemical plating process, the metal passivation layer 60 can be used as a test contact to detect the forward bias voltage (Vf), reverse leakage current (Ir) and other circuit characteristics of the led device 10, and the measured values can be used to evaluate the quality of the sidewall insulation layer 40, so as to eliminate the defective products and increase the yield of the subsequent process.
Please refer to fig. 3, which is a cross-sectional view of a structure according to a second embodiment of the present invention, wherein the sidewall insulating layer 40 covers the upper edge 202 of the carrier, and the metal passivation layer 60 covers the upper edge 202 of the carrier through the sidewall insulating layer 40. In one embodiment, the width of the carrier top edge 202 is between 10 micrometers (um) and 50 micrometers (um), and the width of the carrier top edge 202 without the metal protection layer 60 is at least 5 micrometers (um).
As shown in the first and second embodiments shown in fig. 1 and 3, the conductive carrier 20 and the led die 30 can be rectangular bodies, so that the die-side edge 302 and the carrier-side edge 201 have four die-side surfaces 303 and four carrier-side surfaces 203, respectively, and the metal protection layer 60 covers and protects the four die-side surfaces 303 and the four carrier-side surfaces 203, thereby achieving a proper protection effect.
Referring to fig. 4, in order to reduce the manufacturing cost, the metal protection layer 60 can also only cover and protect the die side 303 and the carrier side 203 nearest to the bonding electrode 50, because the die side 303 and the carrier side 203 nearest to the bonding electrode 50 are most likely to generate moisture and conductive substances (metal ions) during the electroplating or electroless plating process. Therefore, the die side 303 and the carrier side 203 closest to the bonding electrode 50 can be covered with the metal protection layer 60 to save the manufacturing cost.
As described above, the features of the present invention include at least:
1. through the coating of the metal protection layer, the effect of blocking and blocking moisture and conductive substances (metal ions) can be exerted, and the effect of strengthening and doubly protecting the side wall insulation layer can be achieved.
2. The forward bias voltage (Vf), reverse leakage current (Ir), etc. of the led device can be detected by using the metal passivation layer as a test contact, so as to evaluate the quality of the sidewall insulation layer according to the measured values.
3. The metal protection layer can be partially coated on the side surface of the die closest to the welding electrode and the side surface of the carrier plate, so as to save the manufacturing cost.
Claims (10)
1. A vertical light emitting diode structure, comprising:
a light emitting diode element, the light emitting diode element comprising a conductive carrier plate and a light emitting diode grain formed on the conductive carrier plate, the light emitting diode grain having a grain upper edge and a grain side edge connected to and surrounding the grain, the conductive carrier plate having a carrier plate side edge connected to the grain side edge and a carrier plate upper edge connected to the carrier plate side edge and above which no light emitting diode grain is present;
a sidewall insulating layer covering the upper edge of the die, the side edge of the die and the side edge of the carrier, wherein the sidewall insulating layer has a first electrode exposed region at the upper edge of the die, and the first electrode exposed region exposes the led die;
the welding electrode penetrates through the exposed area of the first electrode and is electrically connected with the light-emitting diode crystal grain; and
a metal protection layer electrically connected to the bonding electrode and covering the side edges of the die and the carrier through the sidewall insulation layer.
2. The led structure of claim 1, wherein the led die comprises a first metal contact layer, a first electrical type semiconductor layer, an active layer and a second electrical type semiconductor layer stacked in sequence, wherein the bonding electrode is electrically connected to the second electrical type semiconductor layer.
3. The led structure of claim 2, wherein the conductive carrier comprises a metal electrode, a conductive block and a metal connection layer stacked in sequence, and the first metal contact layer is formed on the metal connection layer.
4. The led structure of claim 1, wherein the sidewall insulation layer covers an upper edge of the carrier, and the metal passivation layer covers the upper edge of the carrier through the sidewall insulation layer.
5. The LED structure of claim 4, wherein the width of the upper edge of the carrier is between 10-50 μm, and the width of the outer side of the upper edge of the carrier without the passivation layer is at least 5 μm.
6. The LED structure of claim 1 wherein the sidewall insulating layer is made of a material selected from the group consisting of SiO2, siN/SiO2/SiN, tiO2 and TiO2/SiO2/TiO2, and the metal passivation layer is made of a material selected from the group consisting of Pt, tiW, cr, pt, au, cuW, cr/Au, al/Cr/Au, ti/Au, ge/Ni/Au, be/Au and Ni/Au.
7. The led structure of claim 1, wherein the thickness of the metal passivation layer is between 0.05 microns and 3 microns.
8. The led structure of claim 7, wherein the metal passivation layer has a thickness of 1.5 μm.
9. The led structure of claim 1, wherein the conductive carrier and the led die are rectangular, the die-side edge and the carrier-side edge have four die-side surfaces and four carrier-side surfaces, respectively, and the metal passivation layer covers and protects the four die-side surfaces and the four carrier-side surfaces.
10. The led structure of claim 1, wherein the conductive carrier and the led die are rectangular, the die-side edge and the carrier-side edge have four die-side surfaces and four carrier-side surfaces, respectively, and the metal passivation layer covers and protects the die-side surfaces and the carrier-side surfaces nearest to the bonding electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110359542.8A CN115188866A (en) | 2021-04-02 | 2021-04-02 | Vertical light-emitting diode structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110359542.8A CN115188866A (en) | 2021-04-02 | 2021-04-02 | Vertical light-emitting diode structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115188866A true CN115188866A (en) | 2022-10-14 |
Family
ID=83511498
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110359542.8A Pending CN115188866A (en) | 2021-04-02 | 2021-04-02 | Vertical light-emitting diode structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115188866A (en) |
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2021
- 2021-04-02 CN CN202110359542.8A patent/CN115188866A/en active Pending
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