KR20160071854A - Light emitting device - Google Patents

Abstract

Disclosed is a light-emitting device which has improved heat dissipation efficiency and mechanical stability. The light-emitting device includes: a light-emitting structure; a first contact electrode and a second contact electrode each of which is placed above the light-emitting structure and is an ohmic contact which comes in contact with a first conduction-type semiconductor layer and a second conduction-type semiconductor layer, respectively; an insulating layer which is placed above the light-emitting structure and insulates the first contact electrode and the second contact electrode; a first bulk electrode and a second bulk electrode each of which is placed above the light-emitting structure and electrically connected to the first contact electrode and the second contact electrode, respectively; an insulating support which includes a first opening and a second opening which covers the side surface and a part of the top surface of the first bulk electrode and the second bulk electrode and exposes the top surface of the first bulk electrode and the second bulk electrode in part; and a first pad electrode and a second pad electrode each of which fills, at least in part, the first opening and the second opening, respectively. The area of the region exposed by the first opening and the second opening of the top surface of the first bulk electrode and the second bulk electrode is smaller than the horizontal cross-sectional area of the first bulk electrode and the second bulk electrode, respectively.

Description

[0001] LIGHT EMITTING DEVICE [0002]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device, and more particularly to a light emitting device having improved heat dissipation efficiency and mechanical stability.

In recent years, there is an increasing demand for a small-sized high-output light-emitting device, and a demand for a large-area flip-chip type light-emitting device having excellent heat dissipation efficiency is increasing. Since the electrode of the flip chip type light emitting device is directly bonded to the secondary substrate and the wire for supplying external power to the flip chip type light emitting device is not used, the heat emission efficiency is much higher than that of the horizontal type light emitting device. Therefore, even when a high-density current is applied, the heat can be effectively conducted to the secondary substrate side, so that the flip chip type light emitting device is suitable as a high output light emitting source.

In addition, there is an increasing demand for a chip scale package that uses a light emitting device itself as a package, omitting the step of packaging the light emitting device into a separate housing for the miniaturization and high output of the light emitting device. In particular, the electrode of the flip chip type light emitting element can perform a similar function to the lead of the package, and a flip chip type light emitting element can be applied to such a chip scale package.

When such a chip scale package type device is used as a high output light emitting device, a high density current is applied to the chip scale package. When a high-density current is applied, the heat generated from the light emitting chip is increased correspondingly, and accordingly, the heat dissipation efficiency of the high-output light emitting device is a factor that affects the reliability of the light emitting device. Accordingly, there is a demand for a high-output chip scale package having high heat emission efficiency, excellent mechanical stability, and high reliability.

A problem to be solved by the present invention is to provide a light emitting device capable of effectively emitting heat and having a mechanically stable structure.

A light emitting device according to an aspect of the present invention includes: a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first and second conductive semiconductor layers; A first contact electrode and a second contact electrode located on the light emitting structure and ohmically contacting the first and second conductive type semiconductor layers, respectively; An insulating layer disposed on the light emitting structure and insulating the first and second contact electrodes; A first bulk electrode and a second bulk electrode that are located on the light emitting structure and are electrically connected to the first and second contact electrodes, respectively; An insulating support including a first opening and a second opening covering the side surfaces and a part of the upper surface of the first and second bulk electrodes and partially exposing the upper surfaces of the first and second bulk electrodes; And a first pad electrode and a second pad electrode, respectively, at least partially filling the first and second openings, respectively, wherein a portion of the upper surface of the first and second bulk electrodes exposed by the first and second openings Sectional areas of the first and second bulk electrodes, respectively.

Thus, a light emitting device having improved mechanical stability and heat dissipation characteristics can be provided.

The spacing distance between the first and second bulk electrodes may be less than the spacing distance between the first and second openings.

Further, the distance between the first and second bulk electrodes may be 100 mu m or less.

The distance between the first and second openings may be 80 占 퐉 or more.

The insulative support may include a lower insulative support covering the sides of the first and second bulk electrodes and an upper insulative support covering a portion of the upper surfaces of the first and second bulk electrodes, They may be formed of the same material, or may be formed of different materials.

The upper insulating support may cover an interface between the first bulk electrode and the lower insulating support and an interface between the second bulk electrode and the lower insulating support.

The lower and upper insulative supports may be formed of different materials, and the upper insulative support may include photoresist or photo solder resists.

The upper surface of the first pad electrode, the upper surface of the second pad electrode, and the upper surface of the insulating support may be positioned at the same height.

The insulating layer may include a first insulating layer and a second insulating layer, the first insulating layer may partially cover the second contact electrode, and the first contact electrode may partially cover the first insulating layer, And the second insulating layer may include a third opening and a fourth opening partially covering the first contact electrode and partially exposing the first contact electrode and the second contact electrode.

The first bulk electrode may be electrically connected to the first contact electrode through the third opening and the second bulk electrode may be electrically connected to the second contact electrode through the fourth opening.

The light emitting device may further include a connection electrode positioned between the second contact electrode and the second bulk electrode.

The upper surface of the connection electrode may be formed of the same material as the first contact electrode.

The upper surface of the connection electrode may be positioned at the same height as the upper surface of the first contact electrode.

The light emitting structure may include at least one hole partially exposing the first conductive type semiconductor layer, and the first contact electrode may be electrically connected to the first conductive type semiconductor layer through the at least one hole .

A light emitting device according to another aspect of the present invention includes: a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first and second conductive semiconductor layers; A first contact electrode and a second contact electrode located on the light emitting structure and ohmically contacting the first and second conductive type semiconductor layers, respectively; An insulating layer disposed on the light emitting structure and insulating the first and second contact electrodes; A first bulk electrode and a second bulk electrode that are located on the light emitting structure and are electrically connected to the first and second contact electrodes, respectively; And an insulating support including a first opening and a second opening covering the side surfaces and a part of the upper surface of the first and second bulk electrodes and partially exposing the upper surfaces of the first and second bulk electrodes And the distance between the first and second openings may be greater than the distance between the first and second bulk electrodes.

The second conductive semiconductor layer may be a p-type semiconductor layer, and an area of a portion of the upper surface of the second bulk electrode exposed by the second opening may be larger than an area of the portion of the second bulk electrode in contact with the second bulk electrode Area.

The first conductive semiconductor layer may be an n-type semiconductor layer, and an area of a portion of the upper surface of the first bulk electrode exposed by the first opening may be larger than an area of the first bulk electrode contacting the first bulk electrode . ≪ / RTI >

The horizontal cross-sectional area of the first bulk electrode may be greater than the horizontal cross-sectional area of the second bulk electrode.

A light emitting device according to another aspect of the present invention includes: a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first and second conductive semiconductor layers; A first contact electrode and a second contact electrode located on the light emitting structure and ohmically contacting the first and second conductive type semiconductor layers, respectively; An insulating layer disposed on the light emitting structure and insulating the first and second contact electrodes; A first bulk electrode and a second bulk electrode that are located on the light emitting structure and are electrically connected to the first and second contact electrodes, respectively; And an insulating support including a first opening and a second opening covering the side surfaces and a part of the upper surface of the first and second bulk electrodes and partially exposing the upper surfaces of the first and second bulk electrodes And the insulating support is located on a portion of the upper surface of the first and second bulk electrodes on the upper side of the first and second bulk electrodes and on the upper side of the first and second bulk electrodes facing each other.

The insulating support may be located on the outer side surfaces of the first and second bulk electrodes and on the upper surfaces of the first and second bulk electrodes on the outer side surfaces of the first and second bulk electrodes.

According to embodiments of the present invention, it is possible to provide a light emitting device including an upper insulating support and a lower insulating support and including an insulating support covering a side surface and a part of an upper surface of the bulk electrodes. Accordingly, a light emitting device having high heat emission efficiency, excellent mechanical stability, low probability of contamination by external factors such as moisture and high reliability can be provided.

1 and 2 are a cross-sectional view and a plan view illustrating a light emitting device according to an embodiment of the present invention.
3 is a cross-sectional view illustrating a light emitting device according to another embodiment of the present invention.
4 and 5 are a cross-sectional view and a plan view illustrating a light emitting device according to another embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided by way of example so that those skilled in the art can sufficiently convey the spirit of the present invention. Therefore, the present invention is not limited to the embodiments described below, but may be embodied in other forms. In the drawings, the width, length, thickness, etc. of components may be exaggerated for convenience. It is also to be understood that when an element is referred to as being "above" or "above" another element, But also includes the case where another component is interposed between the two. Like reference numerals designate like elements throughout the specification.

1 and 2 are a cross-sectional view and a plan view illustrating a light emitting device according to an embodiment of the present invention. Fig. 1 shows a cross section of a region corresponding to line I-I 'in Fig.

1 and 2, a light emitting device 100 includes a light emitting structure 120, a first contact electrode 130, a second contact electrode 140, insulating layers 150 and 160, first and second Bulk electrodes 171 and 173, and an insulating support 180. Further, the light emitting device 100 may further include a growth substrate (not shown), a wavelength conversion unit (not shown), and a connection electrode 145.

The light emitting structure 120 includes a first conductivity type semiconductor layer 121, an active layer 123 located on the first conductivity type semiconductor layer 121, and a second conductivity type semiconductor layer 125). The first conductivity type semiconductor layer 121, the active layer 123 and the second conductivity type semiconductor layer 125 may include a III-V compound semiconductor, for example, (Al, Ga, In) N, And may include the same nitride-based semiconductor. The first conductivity type semiconductor layer 121 may include an n-type impurity (for example, Si) and the second conductivity type semiconductor layer 125 may include a p-type impurity (for example, Mg) have. It may also be the opposite. The active layer 123 may comprise a multiple quantum well structure (MQW).

The light emitting structure 120 may include a region in which the first conductivity type semiconductor layer 121 is partially exposed because the second conductivity type semiconductor layer 125 and the active layer 123 are partially removed. The light emitting structure 120 may include at least one hole 120a that exposes the first conductivity type semiconductor layer 121 through the second conductivity type semiconductor layer 125 and the active layer 123. For example, ). In addition, the holes 120a may be formed in plural, and the shape and arrangement of the holes 120a are not limited to those shown in the drawings. The region where the first conductivity type semiconductor layer 121 is partially exposed may be formed by partially removing the second conductivity type semiconductor layer 125 and the active layer 123 to form the second conductivity type semiconductor layer 125 and the active layer 123). ≪ / RTI >

Further, the light emitting structure 120 may further include a roughness R formed by increasing the roughness of its bottom surface. Roughness (R) can be formed using at least one of wet etching, dry etching, and electrochemical etching. For example, PEC etching or etching using KOH and NaOH So that the roughness R can be formed. The first conductive semiconductor layer 121 may include protrusions and / or recesses having a size of from 탆 to nm scale formed on the surface of the first conductivity type semiconductor layer 121 as the roughness R is formed. By forming the roughness on the surface of the light emitting structure 120, the extraction efficiency of the light emitting element can be improved.

The light emitting structure 120 may further include a growth substrate (not shown) positioned under the first conductive type semiconductor layer 121. The growth substrate is not limited as long as it can grow the light emitting structure 120. For example, the growth substrate may be a sapphire substrate, a silicon carbide substrate, a silicon substrate, a gallium nitride substrate, an aluminum nitride substrate, or the like. Such a growth substrate can be separated and removed from the light emitting structure 120 using a known technique.

The second contact electrode 140 is located on the second conductive semiconductor layer 125 and may be in ohmic contact with the second conductive semiconductor layer 125. The second contact electrode 140 may cover the upper surface of the second conductive type semiconductor layer 125 at least partially and further may cover the upper surface of the second conductive type semiconductor layer 125 have. In addition, the second conductive semiconductor layer 125 may be formed to cover the upper surface of the second conductive semiconductor layer 125 as a single body in regions other than the positions where the holes 120a of the light emitting structure 120 are formed. Accordingly, current can be uniformly supplied to the entire light emitting structure 120, and the current dispersion efficiency can be improved. However, the present invention is not limited thereto.

The second contact electrode 140 may include a material that can be in ohmic contact with the second conductive semiconductor layer 125 and may include, for example, a metal material and / or a conductive oxide.

When the second contact electrode 140 includes a metal material, the second contact electrode 140 may include a reflective layer and a cover layer covering the reflective layer. As described above, the second contact electrode 140 can perform the function of reflecting light in addition to ohmic contact with the second conductive type semiconductor layer 125. Accordingly, the reflective layer may include a metal having high reflectivity and capable of forming an ohmic contact with the second conductive semiconductor layer 125. For example, the reflective layer may include at least one of Ni, Pt, Pd, Rh, W, Ti, Al, Mg, Ag and Au. Also, the reflective layer may comprise a single layer or multiple layers.

The cover layer may prevent mutual diffusion between the reflective layer and other materials, and may prevent external substances from diffusing to the reflective layer and damaging the reflective layer. Accordingly, the cover layer may be formed to cover the bottom surface and the side surface of the reflective layer. The cover layer may be electrically connected to the second conductivity type semiconductor layer 125 together with the reflective layer so as to serve as an electrode together with the reflective layer. The cover layer may comprise, for example, Au, Ni, Ti, Cr, etc., and may comprise a single layer or multiple layers.

On the other hand, when the second contact electrode 140 includes a conductive oxide, the conductive oxide may be ITO, ZnO, AZO, IZO, or the like. When the second contact electrode 140 includes a conductive oxide, the upper surface of the second conductive type semiconductor layer 125 can cover a wider region than the case where the second contact electrode 140 includes a metal. That is, the distance from the upper edge of the hole 120a to the second contact electrode 140 may be relatively shorter when the second contact electrode 140 is formed of a conductive oxide. In this case, the shortest distance from the portion where the second contact electrode 140 and the second conductivity type semiconductor layer 125 are in contact to the portion where the first contact electrode 130 and the first conductivity type semiconductor layer 121 are in contact with each other the method can be relatively shorter, there can be reduced the forward voltage (V _f) of the light emitting element 100. the

In the case where the second contact electrode 140 includes ITO, the first insulating layer 150 includes SiO ₂ , and the first contact electrode 130 includes Ag, the ITO / SiO 2 / Ag laminated structure May be formed.

The insulating layers 150 and 160 may include a first insulating layer 150 and a second insulating layer 160. In addition, the insulating layers 150 and 160 may partly cover the first and second contact electrodes 130 and 140. Hereinafter, the first insulating layer 150 will be described first, and the contents related to the second insulating layer 160 will be described later.

The first insulating layer 150 may partially cover the upper surface of the light emitting structure 120 and the second contact electrode 140. The first insulating layer 150 covers the side surface of the hole 120a and may partially expose the first conductive type semiconductor layer 121 exposed in the hole 120a. The first insulating layer 150 may include an opening portion located at a portion corresponding to the hole 120a and an opening portion exposing a portion of the second contact electrode 140. [ The first conductive semiconductor layer 121 and the second contact electrode 140 may be partially exposed through the openings.

The first insulating layer 150 may include an insulating material, for example, SiO ₂ , SiN _x , MgF _2, or the like. Further, the first insulating layer 150 may include multiple layers, and may include a distributed Bragg reflector in which materials having different refractive indices are alternately stacked.

When the second contact electrode 140 includes a conductive oxide, the first insulating layer 150 may include a distributed Bragg reflector to improve the luminous efficiency of the light emitting device 100a. Alternatively, the second contact electrode 140 may include a conductive oxide, and the first insulating layer 150 may be formed of a transparent insulating oxide (e.g., SiO ₂ ). The second contact electrode 140, An omnidirectional reflector formed by a laminated structure of the first insulating layer 150 and the first contact electrode 130 may be formed.

Further, unlike the illustrated embodiment, the first insulating layer 150 may further cover at least a portion of the side surface of the light emitting structure 120. [ The extent to which the first insulating layer 150 covers the side surface of the light emitting structure 120 may vary depending on the chip unit isolation in the manufacturing process of the light emitting device. That is, the first insulating layer 150 may be formed to cover only the upper surface of the light emitting structure 120, as in the present embodiment, or alternatively, the individual wafers may be individualized in the manufacturing process of the light emitting device 100 In the case of forming the first insulating layer 150, the first insulating layer 150 may be covered to the side of the light emitting structure 120.

The first contact electrode 130 may partly cover the light emitting structure 120 and may include a first contact electrode 130 through an opening of the first insulating layer 150 located at a portion corresponding to the hole 120a and the hole 120a. The ohmic contact with the conductive semiconductor layer 121 can be achieved. The first contact electrode 130 may be formed to cover the entirety of the first insulating layer 150 except for a part thereof. The first contact electrode 130 may be electrically insulated from the second contact electrode 140 by the first insulating layer 150.

The first contact electrode 130 is formed so as to cover the entire upper surface of the light emitting structure 120 except for a part of the region, thereby further improving the current dispersion efficiency. In addition, since the first contact electrode 130 can cover a portion not covered by the second contact electrode 140, the light can be more effectively reflected, and the light emitting efficiency of the light emitting device 100 can be improved.

The first contact electrode 130 may serve to reflect the light as well as the ohmic contact with the first conductive semiconductor layer 121. Accordingly, the first contact electrode 130 may be a single layer or a multilayer, and may include a highly reflective metal layer such as an Al layer. The highly reflective metal layer may be formed on an adhesive layer such as Ti, Cr or Ni. The first contact electrode 130 may include at least one of Ni, Pt, Pd, Rh, W, Ti, Al, Mg, Ag and Au.

In addition, unlike the first embodiment, the first contact electrode 130 may be formed to cover the side surface of the light emitting structure 120. When the first contact electrode 130 is also formed on the side surface of the light emitting structure 120, the light emitted to the side from the active layer 123 is reflected upward to increase the ratio of light emitted to the upper surface of the light emitting device 100 .

The light emitting device 100 may further include a connection electrode 145.

The connection electrode 145 may be located on the second contact electrode 140 and may be electrically connected to the second contact electrode 140 through the opening of the first insulation layer 150. Further, the connection electrode 145 may electrically connect the second contact electrode 140 and the second bulk electrode 173 to each other. In addition, the connection electrode 145 may be formed to partially cover the first insulating layer 150, and may be isolated from the first contact electrode 130 and isolated from each other.

The upper surface of the connection electrode 145 may be formed to have substantially the same height as the upper surface of the first contact electrode 130. In addition, the connection electrode 145 may be formed in the same process as the first contact electrode 130. Accordingly, the connection electrode 145 and the first contact electrode 130 may include the same material. However, the present invention is not limited thereto, and the connection electrode 145 and the first contact electrode 130 may include different materials.

The second insulating layer 160 may partially cover the first contact electrode 130 and may have a first opening 160a partially exposing the first contact electrode 130 and a second opening 160a partially exposing the second contact electrode 140. [ And a second opening 160b that partially exposes the second opening 160b. At least one of the first and second openings 160a and 160b may be formed.

The second insulating layer 160 may include an insulating material, and may include, for example, SiO ₂ , SiN _x , and MgF ₂ . Further, the second insulating layer 160 may include multiple layers and may include a distributed Bragg reflector in which materials having different refractive indices are alternately stacked.

The first bulk electrode 171 and the second bulk electrode 173 may be positioned on the light emitting structure 120 and the first bulk electrode 171 and the second bulk electrode 173 may be located on the first contact electrode 130 and the second contact electrode 140, respectively. In particular, the first bulk electrode 171 and the second bulk electrode 173 may be in direct contact with and electrically connected to the first and second contact electrodes 130 and 140, respectively. At this time, the first bulk electrode 171 and the second bulk electrode 173 may be electrically connected to the first and second contact electrodes 130 and 140 through the first and second openings 160a and 160b, respectively .

The first bulk electrode 171 and the second bulk electrode 173 may have a thickness of several tens of micrometers or more, and may have a thickness of, for example, about 70 to 80 micrometers. By having the bulk electrodes 171, 173 have a thickness in the above-mentioned range, the light emitting element can be used as a chip scale package by itself.

The first bulk electrode 171 and the second bulk electrode 173 may be formed of a single layer or multiple layers and may include a material having electrical conductivity. For example, the first bulk electrode 171 and the second bulk electrode 173 may include Cu, Pt, Au, Ti, Ni, Al, Ag, and the like. Alternatively, it may alternatively comprise a sintered form of metal particles and a nonmetallic material interposed between the metal particles.

The distance Y between the first bulk electrode 171 and the second bulk electrode 173 may be less than a predetermined value and the predetermined value may be determined by mounting the light emitting device 100 on a separate substrate, It may be a minimum value between the electrode pads exposed in the mounting scene of the light emitting device 100 required when the light emitting device 100 is exposed. Specifically, for example, when soldering is used to mount a predetermined light emitting element on a separate secondary substrate, the distance between the electrode pads exposed to the mounting surface of the predetermined light emitting element for preventing a short circuit is generally about 250 Mu m or more. When eutectic bonding is used to mount a predetermined light emitting device on a separate secondary substrate, the distance between the electrode pads exposed to the mounting surface of the predetermined light emitting device for preventing the short circuit is generally about < RTI ID = 0.0 & It is required to be at least 80 탆. According to the present embodiment, the distance Y between the first bulk electrode 171 and the second bulk electrode 173 may be less than this predetermined value, for example, may be about 250 占 퐉 or less, and may be about 100 占 퐉 or less And further, it may be about 80 탆 or less. The horizontal cross-sectional area and the volume of the first bulk electrode 171 and the second bulk electrode 173 can be set relatively to each other by setting the spacing distance Y between the first bulk electrode 171 and the second bulk electrode 173 to a predetermined value or less. So that the heat generated when the light emitting device 100 is driven can be effectively released. This will be described in further detail below.

The first bulk electrode 171 and the second bulk electrode 173 may have different volumes and the horizontal cross sectional area of the first bulk electrode 171 may be larger than the horizontal cross sectional area of the second bulk electrode 173. [ It can be big. At this time, the first conductive semiconductor layer 121 may be an n-type semiconductor layer, and the second conductive semiconductor layer 125 may be a p-type semiconductor layer. Generally, heat generated when the light emitting device 100 is driven is more concentrated in the first bulk electrode 171 serving as an n-type electrode than the second bulk electrode 173 serving as a p-type electrode. Therefore, the horizontal cross-sectional area of the first bulk electrode 171 may be larger than the horizontal cross-sectional area of the second bulk electrode 173, thereby improving the heat emission efficiency of the light emitting device 100.

The insulating support 180 is located on the light emitting structure 120 and partially covers the side surfaces of the bulk electrodes 171 and 173 and the upper surfaces of the bulk electrodes 171 and 173. In addition, the insulating support 180 may include a third opening 180a and a fourth opening 180b partially exposing the upper surfaces of the first bulk electrode 171 and the second bulk electrode 173.

The insulative support 180 may include a lower insulative support 181 and an upper insulative support 183 and the lower insulative support 181 may surround the sides of the bulk electrodes 171 and 173, The support 183 may partly cover the upper surface of the bulk electrodes 171, 173. The upper insulating support 183 may cover the interface between the lower insulating support 181 and the bulk electrodes 171 and 173.

The insulating support 180 is electrically insulative and covers the sides of the first bulk electrode 171 and the second bulk electrode 173, effectively insulating them from each other. At the same time, the insulating support 180 may serve to support the first bulk electrode 171 and the second bulk electrode 173.

The upper surfaces of the bulk electrodes 171 and 173 are partially covered by the upper insulating support 183 and the areas of the exposed portions 171a and 173a in the upper surface of the first and second electrodes 171 and 173 are Sectional area of the first bulk electrode 171 and the horizontal cross-sectional area of the second bulk electrode 173. In particular, the upper insulating support 183 may be positioned on the upper surface of the bulk electrodes 171, 173 around the side surfaces of the first bulk electrode 171 and the second bulk electrode 173 facing each other. The distance X between the exposed top surface 171a of the first bulk electrode 171 and the exposed top surface 173a of the second bulk electrode 173 is less than the distance X between the first bulk electrode 171 and the second bulk electrode 173. [ Is greater than the separation distance (Y).

In detail, a conductive material (for example, solder, conductive adhesive, eutectic material or the like) is formed between the exposed upper surfaces 171a and 173a and a separate substrate to form the light emitting device 100 And the separate substrate are adhered to each other so that the light emitting device 100 can be mounted on the separate substrate. In order to prevent electrical shorting between the bulk electrodes 171 and 173 due to the conductive material formed for adhesion, the spacing distance X between the exposed upper surfaces 171a and 173a as described above is set to a predetermined distance It is required to be above the numerical value. The insulating support 180 is formed so as to partially cover the upper surfaces of the bulk electrodes 171 and 173 so that the exposed top surface 171a of the first bulk electrode 171 and the second bulk electrode 173 The spacing distance X between the exposed upper surfaces 173a of the first and second bulk electrodes 171 and 173 may be greater than the spacing distance Y between the first and second bulk electrodes 171 and 173. Therefore, the separation distance X is set to be not less than a predetermined value capable of preventing electrical short-circuiting between the bulk electrodes 171 and 173, and the separation distance Y between the bulk electrodes 171 and 173 May be formed to be less than a predetermined value that can prevent electrical shorting between the bulk electrodes 171 and 173. Accordingly, it is possible to effectively improve heat dissipation efficiency of the light emitting device 100 and to prevent the occurrence of an electrical short in the mounting process of the light emitting device 100. [

The distance X between the exposed upper surface 171a of the first bulk electrode 171 and the exposed upper surface 173a of the second bulk electrode 173 is not limited but the light emitting device 100 may be separately soldered The spacing distance X may be about 250 μm or more. Further, when the light emitting device 100 is mounted on a separate substrate through process bonding, the spacing distance X may be about 80 μm or more . However, the present invention is not limited thereto.

The upper insulating support 183 is formed such that the distance X between the exposed upper surface 171a of the first bulk electrode 171 and the exposed upper surface 173a of the second bulk electrode 173 is not less than a predetermined value It is sufficient that the bulk electrodes 171 and 173 are arranged in the peripheral region of the upper side of the side opposite to each other so as to be arranged in the other region. For example, as shown in FIGS. 1 and 2, the insulating support 180 positioned between the first and second bulk electrodes 171 and 173 may have a "T" shape in cross section Further, the insulating support 180 covering the outer side surfaces of the first and second bulk electrodes 171 and 173 may have a cross-sectional shape.

In addition, the insulating support 180 and the bulk electrodes 171 and 173 may be formed of different materials. In particular, the insulating support 180 may include an insulating polymer and / or an insulating ceramic, (171, 173) may include a metallic material. Accordingly, peeling or cracking may occur at the interface between the insulating support 180 and the bulk electrodes 171 and 173, and breakage due to stress and strain may occur due to bonding of different materials. If the insulating support 180 and / or the bulk electrodes 171 and 173 are broken, the light emitting structure 120 may be contaminated and a crack or the like may be generated in the light emitting structure 120, ) May be less reliable. According to embodiments of the present invention, the insulating support 180 is formed to partially cover the side surfaces of the bulk electrodes 171 and 173 and the upper surfaces of the bulk electrodes 171 and 173, The mechanical stability between the bulk electrodes 171 and 173 can be improved. Therefore, the reliability of the light emitting element 100 can be improved.

In addition, since the mechanical stability of the light emitting device 100 is improved, it is possible to prevent the light emitting structure 120 from being damaged in the process of separating the growth substrate (not shown) from the light emitting structure 120.

Further, the lower insulating support 181 and the upper insulating support 183 may be formed of the same material or different materials.

When the lower insulating support 181 and the upper insulating support 183 are formed of the same material, the insulating support 180 may include a material such as EMC (Epoxy Molding Compound) or Si resin . The insulating substrate 180 may include a light-reflective and light-scattering particles, such as TiO ₂ particles.

When the lower insulating support 181 and the upper insulating support 183 are formed of different materials, the upper insulating support 183 is formed of a material having lower embrittlement and / or lower hygroscopicity than the lower insulating support 181 . For example, the lower insulating support 181 may include a material such as an epoxy molding compound (EMC), a Si resin, and the upper insulating support 183 may include a photoresist PR and / or a photo solder resist (PSR) ≪ / RTI >

Since the upper insulating support 183 is formed of a material having a relatively low brittleness so that the probability of cracking or cracking is lower than that of the lower insulating support 181 and the lower insulation supporting body 183 is formed between the lower insulating support 181 and the bulk electrodes 171 and 173 It is possible to prevent foreign contaminants from penetrating through the interface. Since the upper insulating support 183 is formed of a material having a relatively low hygroscopicity, external contaminants can be prevented from penetrating through the interface between the lower insulating support 181 and the bulk electrodes 171 and 173. For example, when the lower insulating support 181 is formed of a highly hygroscopic material such as EMC, the upper insulating support 183 formed of a material such as PSR can protect the light emitting element 100 more effectively from moisture have. Particularly, when the upper insulating support 183 is formed to cover the interface between the lower insulating support 181 and the bulk electrodes 171 and 173, the above-described protection function of the light emitting device 100 can be more effectively exerted.

The area of the exposed upper surface 171a of the first bulk electrode 171 may be smaller than the area of the first bulk electrode 171 in contact with the first contact electrode 130 and the area of the second bulk electrode 173 May be larger than the area of the region where the second bulk electrode 173 and the second contact electrode 140 are in contact with each other. In this case, the horizontal cross-sectional area of the first bulk electrode 171 may be larger than the horizontal cross-sectional area of the second bulk electrode 173.

That is, the horizontal cross-sectional area of the first bulk electrode 171 may be greater than the horizontal cross-sectional area of the second bulk electrode 173, thereby improving the heat emission efficiency of the light emitting device 100. The area of the exposed upper surface 171a of the first bulk electrode 171 is larger than the ratio of the horizontal cross sectional area of the first bulk electrode 171 and the horizontal cross sectional area of the second bulk electrode 173 to the area of the second bulk electrode 173, The area between the upper surfaces 171a and 173a exposed on the surface on which the light emitting device 100 is mounted can be made substantially similar. Therefore, the light emitting device 100 having a further improved heat emission efficiency can be provided without changing the process of mounting the light emitting device 100 on a separate substrate.

In some embodiments, unlike the illustrated structure, the insulating support 180 may cover the side of the light emitting structure 120, in which case the light emitting angle of the light emitted from the light emitting structure 120 may vary. A portion of the light emitted to the side of the light emitting structure 120 may be reflected to the bottom surface of the light emitting structure 120 when the insulating support 180 covers at least a part of the side surface of the light emitting structure 120 . Thus, by adjusting the region where the insulative support body 180 is disposed, the light emission angle of the light emitting element 100 can be adjusted.

The light emitting device 100 may further include a wavelength converting unit (not shown). The light emitting device 100 may include a light emitting device 120 capable of realizing various colors of light by wavelength- (100) may be provided. For example, when the wavelength converter includes a phosphor emitting red and green light, and the blue light is emitted from the light emitting structure 120, the light emitting device 100 may emit white light. Thus, a miniaturized high output wafer level white light emitting device can be provided.

The position of the wavelength conversion portion is not limited and can be formed on the lower surface of the light emitting structure 120 and further formed to cover the side surface of the light emitting structure 120, for example.

3 is a cross-sectional view illustrating a light emitting device according to another embodiment of the present invention.

The light emitting device 200 of FIG. 3 is substantially similar to the light emitting device 100 described with reference to FIGS. 1 and 2 and includes a first pad electrode 191 and a second pad electrode 193, . The light emitting device 200 of the present embodiment will be mainly described below, and detailed description of the same configuration will be omitted.

1 and 2, a light emitting device 100 includes a light emitting structure 120, a first contact electrode 130, a second contact electrode 140, insulating layers 150 and 160, first and second The first pad electrode 191, and the second pad electrode 193, as shown in FIG. Further, the light emitting device 100 may further include a growth substrate (not shown), a wavelength conversion unit (not shown), and a connection electrode 145.

The first pad electrode 191 and the second pad electrode 193 may be located on the first bulk electrode 171 and the second bulk electrode 173 respectively and may also be located on the third The opening 180a and the fourth opening 180b at least partially. The first pad electrode 191 and the second pad electrode 193 are connected to the exposed upper surface 171a of the first bulk electrode 171 and the exposed upper surface 173a of the second bulk electrode 173, Can be covered. The distance between the first and second pad electrodes 191 and 193 is equal to the distance X between the exposed top surface 171a of the first bulk electrode 171 and the exposed top surface 173a of the second bulk electrode 173 ). ≪ / RTI >

The top surface of the first pad electrode 191 and the top surface of the second pad electrode 193 may be flush with the top surface of the insulating support 180 at substantially the same height. In this case, the upper surface of the light emitting element 100 may be formed to be generally flat.

The first and second pad electrodes 191 and 193 may be formed by plating or the like so as to fill the openings of the insulating support 180. Thereafter, the first and second pad electrodes 191 and 193 and the insulating support 180 are partially removed by a physical and / or chemical method such as lapping or CMP to form the first pad electrode 191 and the upper surface of the second pad electrode 193 may be formed to be substantially parallel to the upper surface of the insulating support 180.

The first pad electrode 191 and the second pad electrode 193 may include a conductive material such as a metallic material such as Ni, Pt, Pd, Rh, W, Ti, Al, , Cu, Ag, Bi, In, Zn, Sb, Mg, Pb and the like. The first and second pad electrodes 191 and 193 may include substantially the same material as the bulk electrodes 171 and 173, or may be formed of different materials. The first and second pad electrodes 191 and 193 may be formed using a deposition or plating method, and may be formed using electroless plating, for example.

Since the light emitting element 200 further includes the first and second pad electrodes 191 and 193, the upper surface of the light emitting element 200 (the surface on which the light emitting element 200 is mounted on a separate substrate) . Accordingly, the step of mounting the light emitting device 200 on a separate substrate can be facilitated.

Also, in the process of separating the growth substrate (not shown) from the light emitting structure 120 during the manufacturing process of the light emitting device 200, if there is a step on the surface opposite to the surface on which the growth substrate is located, The probability that the structure 120 cracks or breaks occurs is increased. According to the present embodiment, the first and second pad electrodes 191 and 193 are formed to have a flat surface opposite to the surface on which the growth substrate is disposed, It is possible to prevent damage from occurring. Accordingly, the yield of the manufacturing process of the light emitting device 200 can be improved, and the reliability of the manufactured light emitting device 200 can be improved.

4 and 5 are a cross-sectional view and a plan view illustrating a light emitting device according to another embodiment of the present invention.

The light emitting device 300 of this embodiment differs from the light emitting device 200 of FIGS. 1 and 2 in the structure of the light emitting structure 120. Accordingly, there is a difference in the mutual structure relation of the other remaining components, and the following description will be focused on the differences. Detailed description of the same configuration will be omitted.

4A is a plan view of the light emitting device according to the present embodiment, FIG. 4B is a plan view for explaining the positions of the holes 120h and the positions of the first and second openings 160a and 160b And Fig. 5 is a cross-sectional view showing a cross section of a region corresponding to the II-II 'line of Figs. 4 (a) and 4 (b).

4 and 5, the light emitting device 300 includes the light emitting structure 120, the first contact electrode 130, the second contact electrode 140, the insulating layers 150 and 160, the first and second Bulk electrodes 171 and 173, and an insulating support 180. Furthermore, the light emitting device 300 may further include a growth substrate (not shown), a wavelength conversion unit (not shown), a first pad electrode 191, and a second pad electrode 193.

The light emitting structure 120 may include a region in which the first conductivity type semiconductor layer 121 is partially exposed because the second conductivity type semiconductor layer 125 and the active layer 123 are partially removed. The light emitting structure 120 includes a plurality of holes 120h through the second conductivity type semiconductor layer 125 and the active layer 123 to expose the first conductivity type semiconductor layer 121, . ≪ / RTI > The holes 120h may be positioned substantially regularly throughout the light emitting structure 120. [ However, the present invention is not limited thereto, and the arrangement and the number of the holes 120h may be variously modified.

Also, the exposed form of the first conductivity type semiconductor layer 121 is not limited to the hole 120h. For example, the exposed region of the first conductive semiconductor layer 121 may be formed in a line shape, a combination of holes and lines, or the like.

The second contact electrode 140 may be on ohmic contact with the second conductive semiconductor layer 125. The second contact electrode 140 may be disposed so as to cover the entire upper surface of the second conductive type semiconductor layer 125 and may be formed to substantially completely cover the upper surface of the second conductive type semiconductor layer 125. [ have. The second contact electrode 140 may be formed as a single body over the whole of the light emitting structure 120. In this case, the second contact electrode 140 includes openings corresponding to the positions of the plurality of holes 120h . Accordingly, current can be uniformly supplied to the entire light emitting structure 120, and the current dispersion efficiency can be improved.

However, the present invention is not limited thereto, and the second contact electrode 140 may be formed of a plurality of unit units.

The first insulating layer 150 may partially cover the upper surface of the light emitting structure 120 and the second contact electrode 140. The first insulating layer 150 may cover the side surfaces of the plurality of holes 120h and may include openings partially exposing the first conductive type semiconductor layer 121 located on the lower surface of the hole 120h. Accordingly, the openings may be positioned corresponding to the positions where the plurality of holes 120h are disposed. In addition, the first insulating layer 150 may include an opening exposing a part of the second contact electrode 140. Further, the first insulating layer 150 may further cover at least a part of the side surface of the light emitting structure 120.

The first contact electrode 130 may partly cover the light emitting structure 120 and may be electrically connected to the first contact electrode 130 through the openings of the first insulating layer 150 located at the portions corresponding to the holes 120h and the holes 120h. The ohmic contact with the conductive semiconductor layer 121 can be achieved. In addition, unlike the first embodiment, the first contact electrode 130 may be formed to cover the side surface of the light emitting structure 120.

The second insulating layer 160 may partially cover the first contact electrode 130 and may have a first opening 160a partially exposing the first contact electrode 130 and a second opening 160a partially exposing the second contact electrode 140. [ And a second opening 160b that partially exposes the second opening 160b. At least one of the first and second openings 160a and 160b may be formed. In addition, the openings 160a and 160b may be biased toward opposite sides.

The first bulk electrode 171 and the second bulk electrode 173 may be positioned on the light emitting structure 120 and the first bulk electrode 171 and the second bulk electrode 173 may be located on the first contact electrode 130 and the second contact electrode 140, respectively.

On the other hand, the distance Y between the first bulk electrode 171 and the second bulk electrode 173 may be less than or equal to a predetermined value, for example, about 250 m or less, and further, about 80 m or less. The first bulk electrode 171 and the second bulk electrode 173 may have different volumes and the horizontal cross sectional area of the first bulk electrode 171 may be larger than the horizontal cross sectional area of the second bulk electrode 173. [ It can be big.

The insulating support 180 is located on the light emitting structure 120 and partially covers the side surfaces of the bulk electrodes 171 and 173 and the upper surfaces of the bulk electrodes 171 and 173. In addition, the insulating support 180 may include a third opening 180a and a fourth opening 180b partially exposing the upper surfaces of the first bulk electrode 171 and the second bulk electrode 173. The insulative support 180 may include a lower insulative support 181 and an upper insulative support 183 and the lower insulative support 181 may surround the sides of the bulk electrodes 171 and 173, The support 183 may partly cover the upper surface of the bulk electrodes 171, 173. The upper insulating support 183 may cover the interface between the lower insulating support 181 and the bulk electrodes 171 and 173.

The upper surfaces of the bulk electrodes 171 and 173 are partially covered by the upper insulating support 183 and the areas of the exposed portions 171a and 173a in the upper surface of the first and second electrodes 171 and 173 are Sectional area of the first bulk electrode 171 and the horizontal cross-sectional area of the second bulk electrode 173. In particular, the upper insulating support 183 may be positioned on the upper surface of the bulk electrodes 171, 173 around the side surfaces of the first bulk electrode 171 and the second bulk electrode 173 facing each other. The distance X between the exposed top surface 171a of the first bulk electrode 171 and the exposed top surface 173a of the second bulk electrode 173 is less than the distance X between the first bulk electrode 171 and the second bulk electrode 173. [ Is greater than the separation distance (Y).

The distance X between the exposed upper surface 171a of the first bulk electrode 171 and the exposed upper surface 173a of the second bulk electrode 173 is not limited but the light emitting device 100 may be separately soldered The spacing distance X may be about 250 μm or more. Further, when the light emitting device 100 is mounted on a separate substrate through process bonding, the spacing distance X may be about 80 μm or more . However, the present invention is not limited thereto.

Further, the lower insulating support 181 and the upper insulating support 183 may be formed of the same material or different materials.

In particular, when the lower insulating support 181 and the upper insulating support 183 are formed of different materials, the upper insulating support 183 may be made of a material having lower embrittlement and / or lower hygroscopicity than the lower insulating support 181 . For example, the lower insulating support 181 may include a material such as an epoxy molding compound (EMC), a Si resin, and the upper insulating support 183 may include a photoresist PR and / or a photo solder resist (PSR) ≪ / RTI >

The area of the exposed upper surface 171a of the first bulk electrode 171 may be smaller than the area of the first bulk electrode 171 in contact with the first contact electrode 130 and the area of the second bulk electrode 173 May be larger than the area of the region where the second bulk electrode 173 and the second contact electrode 140 are in contact with each other. In this case, the horizontal cross-sectional area of the first bulk electrode 171 may be larger than the horizontal cross-sectional area of the second bulk electrode 173.

The first pad electrode 191 and the second pad electrode 193 may be located on the first bulk electrode 171 and the second bulk electrode 173 respectively and may also be located on the third The opening 180a and the fourth opening 180b at least partially. The first pad electrode 191 and the second pad electrode 193 are connected to the exposed upper surface 171a of the first bulk electrode 171 and the exposed upper surface 173a of the second bulk electrode 173, Can be covered. The spacing distance between the first and second pad electrodes 191 and 193 is set to a distance Y between the exposed upper surface 171a of the first bulk electrode 171 and the exposed upper surface 173a of the second bulk electrode 173 ). ≪ / RTI > The top surface of the first pad electrode 191 and the top surface of the second pad electrode 193 may be flush with the top surface of the insulating support 180 at substantially the same height. In this case, the upper surface of the light emitting element 100 may be formed to be generally flat.

While the present invention has been described in connection with what is presently considered to be the most practical and preferred embodiment, it is to be understood that the invention is not limited to the disclosed embodiments. It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the following claims.

Claims (20)

A light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first and second conductive semiconductor layers;
A first contact electrode and a second contact electrode located on the light emitting structure and ohmically contacting the first and second conductive type semiconductor layers, respectively;
An insulating layer disposed on the light emitting structure and insulating the first and second contact electrodes;
A first bulk electrode and a second bulk electrode that are located on the light emitting structure and are electrically connected to the first and second contact electrodes, respectively;
An insulating support including a first opening and a second opening covering the side surfaces and a part of the upper surface of the first and second bulk electrodes and partially exposing the upper surfaces of the first and second bulk electrodes; And
A first pad electrode and a second pad electrode at least partially filling the first and second openings, respectively,
Wherein an area of the upper surface of the first and second bulk electrodes exposed by the first and second openings is smaller than a horizontal cross-sectional area of the first and second bulk electrodes, respectively.
The method according to claim 1,
Wherein a distance between the first and second bulk electrodes is smaller than a distance between the first and second openings.
The method of claim 2,
And the distance between the first and second bulk electrodes is 100 mu m or less.
The method of claim 2,
And the distance between the first and second openings is 80 mu m or more.
The method according to claim 1,
The insulative support comprising a lower insulative support covering the sides of the first and second bulk electrodes and an upper insulative support covering a portion of the upper surfaces of the first and second bulk electrodes,
The lower and upper insulating supports may be formed of the same material or may be formed of different materials.
The method of claim 5,
The upper insulating support covering an interface between the first bulk electrode and the lower insulating support and an interface between the second bulk electrode and the lower insulating support.
The method according to claim 1,
The lower and upper insulative supports are formed of different materials,
Wherein the upper insulating support comprises a photoresist or photo solder resist.
The method according to claim 1,
Wherein the upper surface of the first pad electrode, the upper surface of the second pad electrode, and the upper surface of the insulating support are positioned at the same height.
The method according to claim 1,
Wherein the insulating layer includes a first insulating layer and a second insulating layer,
The first insulating layer partially covering the second contact electrode,
The first contact electrode partially covering the first insulating layer,
The second insulating layer partially covering the first contact electrode and including a third opening and a fourth opening partially exposing the first contact electrode and the second contact electrode.
The method of claim 9,
The first bulk electrode is electrically connected to the first contact electrode through the third opening,
And the second bulk electrode is electrically connected to the second contact electrode through the fourth opening.
The method of claim 9,
And a connection electrode located between the second contact electrode and the second bulk electrode.
The method of claim 11,
And the upper surface of the connection electrode is formed of the same material as the first contact electrode.
The method of claim 11,
And the upper surface of the connection electrode is located at the same height as the upper surface of the first contact electrode.
The method according to claim 1,
Wherein the light emitting structure includes at least one hole for partially exposing the first conductive type semiconductor layer,
Wherein the first contact electrode is electrically connected to the first conductive type semiconductor layer through the at least one hole.
A light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first and second conductive semiconductor layers;
A first contact electrode and a second contact electrode located on the light emitting structure and ohmically contacting the first and second conductive type semiconductor layers, respectively;
An insulating layer disposed on the light emitting structure and insulating the first and second contact electrodes;
A first bulk electrode and a second bulk electrode that are located on the light emitting structure and are electrically connected to the first and second contact electrodes, respectively; And
And an insulating support including a first opening and a second opening covering the side surfaces and a part of the upper surface of the first and second bulk electrodes and partially exposing the upper surfaces of the first and second bulk electrodes ,
Wherein a distance between the first and second openings is larger than a distance between the first and second bulk electrodes.
16. The method of claim 15,
The second conductivity type semiconductor layer is a p-type semiconductor layer,
The area of the upper surface of the second bulk electrode exposed by the second opening is larger than the area of the portion where the second bulk electrode and the second contact electrode are in contact with each other.
16. The method of claim 15,
The first conductivity type semiconductor layer is an n-type semiconductor layer,
An area of a portion of the upper surface of the first bulk electrode exposed by the first opening is smaller than an area of a portion of the first bulk electrode in contact with the first bulk electrode and the first contact electrode.
The method according to claim 16 or 17,
Wherein a horizontal cross-sectional area of the first bulk electrode is larger than a horizontal cross-sectional area of the second bulk electrode.
A light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first and second conductive semiconductor layers;
A first contact electrode and a second contact electrode located on the light emitting structure and ohmically contacting the first and second conductive type semiconductor layers, respectively;
An insulating layer disposed on the light emitting structure and insulating the first and second contact electrodes;
A first bulk electrode and a second bulk electrode that are located on the light emitting structure and are electrically connected to the first and second contact electrodes, respectively; And
And an insulating support including a first opening and a second opening covering the side surfaces and a part of the upper surface of the first and second bulk electrodes and partially exposing the upper surfaces of the first and second bulk electrodes ,
Wherein the insulating support is positioned on a part of the upper surface of the first and second bulk electrodes on the upper side of the first and second bulk electrodes and the side opposite the first and second bulk electrodes.
The method of claim 19,
Wherein the insulating support is located on the outer side surfaces of the first and second bulk electrodes and on the upper surfaces of the first and second bulk electrodes on the outer side surfaces of the first and second bulk electrodes.

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