KR20190093413A - Light emitting device package and light unit - Google Patents

Abstract

An embodiment of the present invention relates to a light emitting element package. The light emitting element package comprises: a first frame and a second frame arranged to be spaced from each other and individually including an upper surface and a lower surface; a body arranged between the first frame and the second frame; and a light emitting element including a first bonding unit facing the first frame on the body and a second bonding unit facing the second frame. The body includes: first and second side surfaces facing each other; and third and fourth side surfaces facing each other. The first frame includes a first bending structure which is bent in multiple stages in the body adjacent to the first side surface of the body. The second frame includes a second bending structure which is bent in multiple stages in the body adjacent to the second side surface of the body. The first and second frames are spaced apart from a lower surface of the body overlapping with the light emitting element. The first frame is exposed to each of the lower surface and the first side surface of the body, and the second frame is exposed to each of the lower surface and the second side surface of the body.

Description

Light emitting device package and light source device {LIGHT EMITTING DEVICE PACKAGE AND LIGHT UNIT}

The embodiment relates to a light emitting device package, a semiconductor device package, a method of manufacturing a semiconductor device package, and a light source device.

A semiconductor device including a compound such as GaN, AlGaN, etc. has many advantages, such as having a wide and easy to adjust band gap energy, and can be used in various ways as a light emitting device, a light receiving device, and various diodes.

Particularly, light emitting devices such as light emitting diodes or laser diodes using group 3-5 or 2-6 compound semiconductor materials have been developed using thin film growth technology and device materials. There is an advantage that can implement light of various wavelength bands such as blue and ultraviolet. In addition, a light emitting device such as a light emitting diode or a laser diode using a group 3 to 5 or 2 to 6 group compound semiconductor material may implement a white light source having high efficiency by using a fluorescent material or combining colors. Such a light emitting device has advantages of low power consumption, semi-permanent life, fast response speed, safety and environmental friendliness compared to conventional light sources such as fluorescent lamps and incandescent lamps.

In addition, when a light-receiving device such as a photodetector or a solar cell is also fabricated using a Group 3-5 Group 2 or Group 6 compound semiconductor material, development of device materials absorbs light in various wavelength ranges to generate a photocurrent. As a result, light in various wavelengths can be used from gamma rays to radio wavelengths. In addition, such a light receiving device has the advantages of fast response speed, safety, environmental friendliness and easy control of the device material, so that it can be easily used in power control or microwave circuits or communication modules.

Therefore, the semiconductor device may replace a light emitting diode backlight, a fluorescent lamp, or an incandescent bulb, which replaces a cold cathode tube (CCFL) constituting a backlight module of an optical communication means, a backlight of a liquid crystal display (LCD) display device. Applications are expanding to include white light emitting diode lighting devices, automotive headlights and traffic lights, and sensors that detect gas or fire. In addition, the semiconductor device may be extended to high frequency application circuits, other power control devices, and communication modules.

The light emitting device may be provided as a pn junction diode having a characteristic in which electrical energy is converted into light energy using, for example, a group 3-5 element or a group 2-6 element on the periodic table. Various wavelengths can be realized by adjusting the composition ratio.

For example, nitride semiconductors are receiving great attention in the field of optical devices and high power electronic devices due to their high thermal stability and wide bandgap energy. In particular, a blue light emitting device, a green light emitting device, an ultraviolet light emitting device, a red light emitting device using a nitride semiconductor, and the like are commercially used and widely used.

For example, in the case of an ultraviolet light emitting device, a light emitting diode which emits light distributed in a wavelength range of 200 nm to 400 nm, and is used in the wavelength band, for short wavelengths, for sterilization and purification, and for long wavelengths, an exposure machine or a curing machine. Can be used.

 Ultraviolet rays can be classified into UV-A (315nm ~ 400nm), UV-B (280nm ~ 315nm), and UV-C (200nm ~ 280nm) in order of long wavelength. The UV-A (315nm ~ 400nm) area is applied to various fields such as industrial UV curing, printing ink curing, exposure machine, forgery discrimination, photocatalyst sterilization, special lighting (aquarium / agriculture, etc.), and UV-B (280nm ~ 315nm). ) Area is used for medical purposes, UV-C (200nm ~ 280nm) area is applied to air purification, water purification, sterilization products.

Meanwhile, as a semiconductor device capable of providing a high output is requested, research on a semiconductor device capable of increasing output by applying a high power source is being conducted.

In addition, in the semiconductor device package, research has been conducted on a method of improving light extraction efficiency of the semiconductor device and improving brightness at the package end. In addition, in the semiconductor device package, research is being conducted to improve the bonding strength between the package electrode and the semiconductor device.

In addition, in the semiconductor device package, research has been conducted on a method for reducing manufacturing cost and improving manufacturing yield by improving process efficiency and structural change.

Embodiments of the present invention provide a light emitting device package, a semiconductor device package, and a method of manufacturing the same, by arranging a frame in a body in a bent structure to enhance the coupling force between the frame and the body.

The embodiment provides a light emitting device package, a semiconductor device package, and a method of manufacturing the same so that the ends of the bent structure of the frame can be exposed to the side and bottom surfaces of the body.

According to an embodiment of the present invention, a support part of a body is disposed between bonding parts of a light emitting device, and a space is provided between each bonding part of the light emitting device and a protrusion of a frame so that spreading of the conductive part can be suppressed. An device package and a method of manufacturing the same are provided.

An embodiment of the present invention provides a light emitting device package, a semiconductor device package, and a method of manufacturing the same, which may arrange a first resin on a body between frames to attach a light emitting device to the body.

An embodiment of the present invention provides a light emitting device package, a semiconductor device package, and a method of manufacturing the through hole disposed in the frame and the conductive portion and the conductive protrusion disposed in the through hole.

An embodiment of the present invention may provide a semiconductor device package, a method of manufacturing a semiconductor device package, and a light source device capable of improving light extraction efficiency and electrical characteristics.

An embodiment of the present invention provides a light emitting device package, a light emitting device package, a semiconductor device package having a recess on the body and a manufacturing method thereof.

The embodiment can provide a semiconductor device package, a light emitting device package, a method of manufacturing a semiconductor device package, and a light source device capable of improving the process efficiency of a package and suggesting a new package structure to reduce manufacturing cost and improve manufacturing yield.

Embodiments provide a semiconductor device package, a light emitting device package, and a semiconductor device package that can prevent re-melting from occurring in a bonding region of a semiconductor device package while the semiconductor device package is rebonded to a substrate. It may provide a method.

A light emitting device package according to an exemplary embodiment of the present invention includes: a first frame and a second frame which are spaced apart from each other and include an upper surface and a lower surface; A body disposed between the first frame and the second frame; And a light emitting device including a first bonding part facing the first frame and a second bonding part facing the second frame on the body. And the body includes first and second sides facing each other and third and fourth sides facing each other, wherein the first frame is multi-stage bent in a body adjacent to the first side of the body. A first bending structure, wherein the second frame includes a second bending structure bent in multiple stages in a body adjacent to a second side of the body, and the first and second frames overlap with the light emitting device. Spaced apart from the lower surface of the body, the first frame may be exposed to the lower surface and the first side of the body, respectively, and may be exposed to the lower surface and the second side of the body of the second frame, respectively.

According to an embodiment of the invention, the first frame includes a first extension portion disposed outside the first side of the body, the first extension portion extends outward from the first bent structure, the second frame Includes a second extension disposed outside the second side of the body, and the second extension may extend outwardly from the second bending structure.

According to an embodiment of the present invention, the first bent structure may include a first bent portion bent from the first frame in the upper surface direction of the body, a second bent portion bent in the first side direction of the body from the first bent portion, And a third bent portion that is bent from the second bent portion toward the lower surface of the body, and an outer surface of the third bent portion may be exposed to the first side surface of the body.

According to an embodiment of the present invention, the second bending structure may include a fourth bending portion bent from the second frame in the direction of the upper surface of the body, a fifth bending portion bent from the fourth bending portion in the second side direction of the body, And a sixth bent portion bent from the fifth bent portion toward the lower surface of the body, and an outer surface of the sixth bent portion may be exposed to a second side surface of the body.

According to an embodiment of the present invention, the first bending structure may include a first bending portion bent from the first frame toward the lower surface of the body, a second bending portion bent from the first bending portion in the first side direction of the body, And a third bent portion that is bent from the second bent portion in the direction of the upper surface of the body, and a lower surface of the second bent portion may be exposed to the lower surface of the body.

According to an embodiment of the present invention, the second bending structure may include a fourth bending portion bent from the second frame toward the lower surface of the body, a fifth bending portion bent from the fourth bending portion in the second side direction of the body, And a sixth bent portion bent from the fifth bent portion toward the upper surface of the body, and a lower surface of the fifth bent portion may be exposed to the lower side of the body.

According to an embodiment of the present invention, the body may be formed of a resin material, and may include a first resin between the light emitting device and the body, and the first resin may be disposed between the first and second bonding portions. .

According to an embodiment of the present invention, the body may include a first recess recessed under the light emitting device, and the first resin may be disposed in the first recess.

According to an embodiment of the invention, the body has a plurality of through holes penetrating the first and second frames in a vertical direction,

Lower surfaces of the first and second frames may be spaced apart from the lower surface of the body.

A light source device according to an embodiment of the present invention includes a circuit board; And one or a plurality of light emitting device packages on the circuit board.

According to an embodiment of the present invention, by arranging a part of the frame disposed in the body in a bent structure, it is possible to strengthen the coupling force with the body.

According to an embodiment of the invention, the rigidity of the frame in the body can be improved.

According to an embodiment of the present invention, by connecting the paste and the frame on the side of the body, it is possible to improve the electrical reliability.

According to an embodiment of the present invention, the first resin may be disposed on a body disposed below the light emitting device to improve adhesion to the light emitting device.

According to an embodiment of the present invention, a recess and a first resin may be provided to the body to improve adhesion of the light emitting device.

According to the embodiment of the present invention, there is an advantage to improve light extraction efficiency, electrical characteristics and reliability.

According to the embodiment of the present invention, the tilt of the light emitting device can be prevented.

According to an embodiment of the present invention, the light emitting device is bonded with a resin, thereby preventing the problem of remelting the light emitting device by external heat.

According to the embodiment of the present invention, there is an advantage of improving manufacturing efficiency and presenting a new package structure to reduce manufacturing cost and improve manufacturing yield.

According to an embodiment of the present invention, by providing a body having a high reflectance, it is possible to prevent the reflector from being discolored, thereby improving the reliability of the semiconductor device package.

According to an exemplary embodiment of the present invention, re-melting may be prevented from occurring in the bonding region of the semiconductor device package while the device package is rebonded to the substrate.

1 is a plan view of a light emitting device package according to a first embodiment of the present invention.
2 is a cross-sectional view taken along the BB side of the light emitting device package of FIG. 1.
3 is another example of the light emitting device package of FIG. 1.
FIG. 4 is a first modified example of the light emitting device package of FIG. 2.
FIG. 5 is a second modified example of the light emitting device package of FIG. 2.
6 is an example of a light source device having the photovoltaic device package of FIG. 2.
7 is a side cross-sectional view of a light emitting device package according to the second embodiment.
FIG. 8 is a first modified example of the light emitting device package of FIG. 7.
9 is an example of a light source device having the light emitting device package of FIG. 7.
10 is an example of a cross-sectional view of a light emitting device applied to a light emitting device package according to an embodiment of the present invention.

Embodiments of the invention will be described with reference to the accompanying drawings. In the description of embodiments of the invention, each layer, region, pattern, or structure may be “on / over” or “under” the substrate, each layer, region, pad, or pattern. "On / over" and "under" are defined as being "directly" or "indirectly" through another layer. It includes everything. In addition, the criteria for the top / top or bottom of each layer will be described based on the drawings, but the embodiment is not limited thereto.

A semiconductor device package according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. In the present invention, the device package may include a semiconductor device or a light emitting device that emits light of ultraviolet rays, infrared rays, or visible light. Hereinafter, a description will be given based on a case in which a light emitting device is applied as an example of a semiconductor device. The light emitting device may include a non-light emitting device such as a zener diode or a sensing device that monitors a wavelength or heat. Can be. Hereinafter, a description will be given based on a case where a light emitting device is applied as an example of a semiconductor device, and the light emitting device package will be described in detail.

First Embodiment

1 is a plan view of a light emitting device package according to a first embodiment of the present invention, FIG. 2 is a sectional view taken along the B-B side of the light emitting device package of FIG. 1, and FIG. 3 is another example of the light emitting device package of FIG. 1.

1 to 3, the light emitting device package 100 may include a package body 110 and a light emitting device 120.

The light emitting device package 100 may have a length in the first direction X equal to or greater than a length in the second direction Y. FIG. The length of the first direction may be greater than the length of the first direction of the package body 110. The length of the first direction X of the package body 110 may be longer than or equal to the length of the second direction Y. FIG. In the following description, the first direction may be an X direction, the second direction may be a Y direction orthogonal to the X direction, and the third direction may be a Z direction orthogonal to the X and Y directions. The first direction may be a direction of a longer side of the sides of the light emitting device 120. For example, the first direction may be a long side direction of the light emitting device 120, and the second direction may be a short side direction. Both short sides of the light emitting device 120 may be disposed opposite to each other in the first direction, and both long sides of the light emitting device 120 may be disposed opposite to each other in the second direction.

The package body 110 may include first and second side surfaces S1 and S2 disposed in a first direction, and third and fourth side surfaces S3 and S4 disposed in a second direction. An interval between the first and second side surfaces S1 and S2 may be a length in a first direction of the third and fourth side surfaces S3 and S4. An interval between the third and fourth side surfaces S3 and S4 may be a length in the first direction of the first and second side surfaces S1 and S2.

The package body 110 may include a plurality of frames. The plurality of frames may include at least two frames or three or more frames. The plurality of frames may include, for example, a first frame 111 and a second frame 112. For convenience of explanation, the following description will be made with two frames. The first frame 111 and the second frame 112 may be spaced apart from each other in the first direction (X).

The package body 110 may include a body 113. The body 113 may be disposed between a plurality of frames. The body 113 may be combined with a plurality of frames. The body 113 may be disposed around the respective frames. The body 113 may be disposed between the first frame 111 and the second frame 112. The body 113 may function as an electrode separation line between the first and second frames 111 and 112. The body 113 may be referred to as an insulating member. The body 113 may be disposed below the first frame 111. The body 113 may be disposed below the second frame 112.

The body 113 may be disposed on the first frame 111. The body 113 may be disposed on the second frame 112. The body 113 may provide an inclined surface disposed on the first frame 111 and the second frame 112. A cavity 102 may be provided on the first frame 111 and the second frame 112 by the inclined surface of the body 113. According to an embodiment of the invention, the package body 110 may be provided in a structure having a cavity 102, or may be provided in a flat structure without the cavity 102. The body 113 may include an upper body 110A having a cavity 102. The body 113 and the upper body 110A may be formed of the same material or different materials. The upper body 110A may be integrally formed with the body 113 or may be separately formed.

For example, the body 113 may be a resin material or an insulating resin material. The body 113 is polyphthalamide (PPA), polychloro triphenyl (PCT), liquid crystal polymer (LCP), polyamide 9T (PA9T), silicone, epoxy, epoxy molding compound (EMC), silicone It may be formed of at least one selected from the group consisting of molding compound (SMC), ceramic, photo sensitive glass (PSG), sapphire (Al ₂ O ₃ ) and the like. The body 113 may be formed of a resin material, and may include a filler of a high refractive material such as TiO ₂ and SiO ₂ therein. The body 113 may be formed of a thermoplastic resin, and since the thermoplastic resin is a material that hardens when heated and is hardened again when cooled, the frames 111 and 112 and the materials contacting the frames 111 and 112 expand or contract by heat. The body 113 may act as a buffer. At this time, when the body 113 has the buffering function, it is possible to prevent the conductive parts such as solder paste, Ag paste, and SAC (Sn-Ag-Cu) paste from being damaged. In the package, a coefficient of thermal expansion (CTE) according to thermal expansion and contraction may be greater in the first direction than in the second direction. The body 113 may include a PCT or PPA material, the PCT or PPA material is a high melting point and a thermoplastic resin.

The upper body 110A may provide an inclined side surface 132 around the cavity 102. The inclined side surface 132 may be inclined at different angles in a first direction and a second direction.

An upper surface of the body 113 may be exposed on the bottom of the cavity 102. Top surfaces of the first and second frames 111 and 112 may be exposed on the bottom of the cavity 102.

The first frame 111 may be coupled in the body 113. The first frame 111 may be coupled in the upper body 110A adjacent to the body 113 and the first side surface S1.

The second frame 112 may be coupled in the body 113. The second frame 112 may be coupled in the upper body 110A adjacent to the body 113 and the second side surface S2.

The first frame 111 and the second frame 112 may be provided as a conductive frame, for example. The conductive frame may be made of metal such as copper (Cu), titanium (Ti), nickel (Ni), gold (Au), chromium (Cr), tantalum (Ta), platinum (Pt), tin (Sn), silver ( Ag), and may be formed in a single layer or multiple layers. The thicknesses of the first and second frames 111 and 112 may be formed in consideration of heat dissipation characteristics and electrical conduction characteristics, and may be formed in a range of 100 micrometers or more, for example, 100 to 300 micrometers.

The first frame 111 and the second frame 112 may be provided as a metal frame. The first frame 111 and the second frame 112 may stably provide structural strength of the package body 110, and may be electrically connected to the light emitting device 120. The first extension part 15 of the first frame 111 extends in the direction of the first side surface S1 of the package body 110 and may protrude one or more. The second extension part 25 of the second frame 112 may extend in the direction of the second side surface S2 of the package body 110 and protrude one or more. The first and second extension parts 15 and 25 may be disposed in one or a plurality, and in the case of the plurality of extension parts, the first and second extension parts 15 and 25 may protrude in a branched form from each of the frames 111 and 112. The first and second extension parts 15 and 25 may not protrude. The first and second side surfaces S1 and S2 of the package body 110 may face each other or may be disposed opposite to each other and may be the first and second side surfaces of the body 115, and may be spaced apart from each other in a first direction and opposite sides. have. The third and fourth side surfaces S3 and S4 of the package body 110 may be spaced apart in a second direction perpendicular to the first direction and may face each other or may be opposite sides to each other. The first to fourth side surfaces S1, S2, S3, and S4 may be vertically or inclined.

The first and second frames 111 and 112 may be provided to have a thickness thinner than the thickness of the body 113. Accordingly, the lower surfaces of the first and second frames 111 and 112 may not be exposed to the lower surface S6 of the body 113. Lower surfaces of the first and second frames 111 and 112 overlapping the bottom of the cavity 102 may not be exposed to the lower surface S6 of the body 113. In an area overlapping the bottom of the cavity 102 in a vertical direction, the lower surfaces of the first and second frames 111 and 112 may be spaced apart from the lower surface S6 of the body 113. In the region overlapping the light emitting device 120 in the vertical direction, the lower surfaces of the first and second frames 111 and 112 may be spaced apart from the lower surface S6 of the body 113. Accordingly, it is possible to prevent the penetration of moisture through the lower surface (S6) of the body 113. It is possible to reduce the interface separation problem between the first and second frames 111 and 112 and the body 113.

The first and second frames 111 and 112 may be exposed to an upper surface of the body 113 and may be disposed below the light emitting device 120. The first and second frames 111 and 112 may be electrically connected to the light emitting device 111. The light emitting device 120 emits light and may emit at least one of ultraviolet light, green light, blue light, white light, and red light. The light emitting device 120 may be disposed on the first and second frames 111 and 112 in a flip chip type.

According to the embodiment of the present invention, as shown in FIG. 2, the light emitting device 120 may include a first bonding part 121, a second bonding part 122, and a light emitting structure 123. The light emitting device 120 may include a substrate 124 on the light emitting structure 123. The light emitting device 120 may have a length in a first direction equal to a length in a second direction or a longer length in the first direction.

The light emitting structure 123 may include a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer. The first bonding part 121 may be electrically connected to the first conductive semiconductor layer. In addition, the second bonding part 122 may be electrically connected to the second conductivity type semiconductor layer.

The substrate 124 is a light transmitting layer and may be formed of an insulating material or a semiconductor material. The substrate 124 may be selected from a group including, for example, sapphire substrate (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, Ge. For example, an irregular pattern may be formed on a surface of the substrate 124.

In example embodiments, the light emitting structure 123 may be provided as a compound semiconductor. The light emitting structure 123 may be provided as a group 2-6 or 3-5 compound semiconductor. For example, the light emitting structure 123 may include at least two elements selected from aluminum (Al), gallium (Ga), indium (In), phosphorus (P), arsenic (As), and nitrogen (N). Can be.

The light emitting structure 123 may include a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. The first and second conductivity-type semiconductor layers may be implemented as at least one of a compound semiconductor of Groups 3-5 or 2-6. The first and the semiconductor material having a composition formula of the second conductivity type semiconductor layer is, for example _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) It can be formed as. For example, the first and second conductivity-type semiconductor layers may include at least one selected from the group consisting of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, and the like. . The first conductive semiconductor layer may be an n-type semiconductor layer doped with n-type dopants such as Si, Ge, Sn, Se, Te, or the like. The second conductive semiconductor layer may be a p-type semiconductor layer doped with p-type dopants such as Mg, Zn, Ca, Sr, and Ba.

The active layer may be implemented with a compound semiconductor. The active layer may be implemented as at least one of a compound semiconductor of Group 3-Group 5 or Group 2-6, for example. When the active layer is implemented as a multi-well structure, the active layer may include a plurality of well layers and a plurality of barrier layers that are alternately arranged, and In _x Al _y Ga _{1 -x- y} N (0 _{≦ x ≦} 1 , 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). For example, the active layer is selected from the group comprising InGaN / GaN, GaN / AlGaN, AlGaN / AlGaN, InGaN / AlGaN, InGaN / InGaN, AlGaAs / GaAs, InGaAs / GaAs, InGaP / GaP, AlInGaP / InGaP, InP / GaAs. It may include at least one.

The first conductive semiconductor layer may be disposed between the substrate 124 and the active layer. The second conductive semiconductor layer may be disposed between the active layer and the bonding parts 121 and 122.

The light emitting device 120 may be disposed on the package body 110. The light emitting device 120 may be disposed on the first frame 111 and the second frame 112. The light emitting device 120 may be disposed on the body 113. A protection device may be disposed above or below any one of the first and second frames 111 and 112.

The first bonding part 121 and the second bonding part 122 may be spaced apart from each other based on a direction in which the body 113 is disposed on the lower surface of the light emitting device 120. The first bonding part 121 may be disposed on the first frame 111. The second bonding part 122 may be disposed on the second frame 112.

In the light emitting device package 100 according to an embodiment of the present invention, a power is connected to the first bonding part 121 of the light emitting device 120 through the first frame 111, and the second frame 112 is connected to the light emitting device package 100. Power may be connected to the second bonding part 122 of the light emitting device 120 through the power supply. The first and second bonding parts 121 and 122 may be electrodes or pads. Accordingly, the light emitting device 120 may be driven by driving power supplied through the first bonding part 121 and the second bonding part 122. In addition, the light emitted from the light emitting device 120 may be provided in an upper direction of the package body 110.

The first bonding part 121 may be disposed between the light emitting structure 123 and the first frame 111. The second bonding part 122 may be disposed between the light emitting structure 123 and the second frame 112. The first bonding part 121 and the second bonding part 122 may be made of metal. The first and second bonding parts 121 and 122 may include Ti, Al, In, Ir, Ta, Pd, Co, Cr, Mg, Zn, Ni, Si, Ge, Ag, Ag alloy, Au, Hf, Pt, Ru, It may be formed in a single layer or multiple layers using one or more materials or alloys selected from the group consisting of Rh, ZnO, IrOx, RuOx, NiO, RuOx / ITO, Ni / IrOx / Au, Ni / IrOx / Au / ITO.

The light emitting device 120 may include one or a plurality of light emitting cells therein. The light emitting cell may include at least one of an n-p junction, a p-n junction, an n-p-n junction, and a p-n-p junction. The plurality of light emitting cells may be connected in series with each other in one light emitting device. Accordingly, the light emitting device may have one or a plurality of light emitting cells, and when n light emitting cells are disposed in one light emitting device, the light emitting device may be driven at a driving voltage of n times. For example, when the driving voltage of one light emitting cell is 3V and two light emitting cells are arranged in one light emitting device, each light emitting device may be driven at a driving voltage of 6V. Alternatively, when the driving voltage of one light emitting cell is 3V and three light emitting cells are arranged in one light emitting device, each light emitting device may be driven at a driving voltage of 9V. The number of light emitting cells arranged in the light emitting device may be one or two to five.

The first and second frames 111 and 112 may be alternately disposed in a first direction or a second direction, and each light emitting device 120 is disposed on the alternately arranged first and second frames 111 and 112. Can be. The light emitting devices 120 may be connected in series with each other or may be arranged in parallel. The molding part 190 may be disposed at an outer circumference of the plurality of first and second frames 111 and 112 and the body 113 coupled thereto.

The first bonding part 121 of the light emitting device 120 may be disposed on the first frame 111, and the second bonding part 122 may be disposed on the second frame 112. The first bonding portion 121 may be connected to the first frame 111 and the conductive portion or may be bonded to each other. The second bonding portion 122 may be connected to the second frame 111 and the conductive portion or may be bonded to each other. The conductive part may be bonded to the first and second bonding parts 121 and 122 on the top surfaces of the first and second frames 111 and 112. The conductive part may include one material selected from the group consisting of Ag, Au, Pt, Sn, Cu, or an alloy thereof. At least one of each of the frames 111 and 112 and the bonding parts 121 and 122 may be formed by combining a material constituting the material and the conductive part with each other by an intermetallic compound layer. The intermetallic compound may include at least one of Cu _x Sn _y , Ag _x Sn _y , Au _x Sn _y , and x may satisfy the condition of 0 <x <1, y = 1-x, x> y. Can be.

The bonding parts 121 and 122 of the light emitting device 120 may be formed of an intermetallic compound between the conductive part and the frame 120 in a process of forming a material forming the conductive part and the conductive part or in a heat treatment process after the conductive part is provided. An intermetallic compound (IMC) layer can be formed. As an example, the conductive part may be formed using a conductive paste. The conductive paste may include a solder paste, a silver paste, or the like, and may include a multilayer or a single layer composed of a multilayer or an alloy composed of different materials. For example, the conductive part may include an SAC (Sn-Ag-Cu) material.

For example, an alloy layer may be formed by bonding between a material forming the conductive portion and a metal of the frames 111 and 112. Accordingly, the conductive portion and the frames 111 and 112 can be physically and electrically coupled stably. The conductive portion, the alloy layer and the frame can be coupled physically and electrically stably. The alloy layer may include at least one intermetallic compound layer selected from the group including AgSn, CuSn, AuSn, and the like. The intermetallic compound layer may be formed by a combination of a first material and a second material, the first material may be provided from a conductive portion, and the second material may be provided from the bonding portions 121 and 122 or the frames 111 and 112. Can be.

The light emitting device package 100 may be mounted on a sub mount or a circuit board. However, when a conventional light emitting device package is mounted on a submount or a circuit board, a high temperature process such as a reflow may be applied. At this time, in the reflow process, a re-melting phenomenon occurs in the bonding region between the lead frame and the light emitting device provided in the light emitting device package, thereby weakening the stability of the electrical connection and the physical coupling.

However, the first bonding portion 121 and the second bonding portion 122 of the light emitting device according to the embodiment may receive driving power through the frames 111 and 112 and the conductive portion. And, the melting point of the conductive portion may be selected to have a higher value than the melting point of the other bonding material. Therefore, the light emitting device package 100 according to the embodiment does not cause re-melting even when bonded to a main substrate through a reflow process, so that electrical connection and physical bonding force are not degraded. There is no advantage. In addition, according to the light emitting device package 100 according to the embodiment, the package body does not need to be exposed to high temperatures in the process of manufacturing the light emitting device package. Therefore, according to the embodiment, it is possible to prevent the package body from being exposed to high temperature to cause damage or discoloration.

Accordingly, the selection range for the material constituting the body 113 can be widened. According to an embodiment, the body 113 may be provided using a relatively inexpensive resin material as well as an expensive material such as a ceramic. For example, the body 113 includes at least one material selected from the group consisting of a polyphthalamide (PPA) resin, a polycyclohexylenedimethylene terephthalate (PCT) resin, an epoxy molding compound (EMC) resin, and a silicone molding compound (SMC) resin. can do.

In the light emitting device package according to the embodiment of the present invention, a predetermined gap Gap may be disposed in an area between the body 113 and the light emitting device 120. The height of the gap may be equal to or greater than the thickness of the first and second bonding parts 121 and 122. The first resin 160 may be disposed in the gap. The first resin 160 may be disposed in an area between the first and second bonding parts 121 and 122, and an area between a lower surface of the light emitting device 120 and an upper surface of the body 113. The first resin 160 may be disposed in an area between the first and second bonding parts 121 and 122 and in an area between a bottom surface of the light emitting device 120 and an upper surface or a bottom of the cavity 113. . The first resin 160 may attach the light emitting device 120 to the body 113. The first resin 160 may include a resin material such as silicon or epoxy. The first resin 160 may include a metal oxide or a filler therein. For example, the first resin 160 may be formed of a material including a metal oxide or impurities such as TiO ₂ , SiO ₂ , and Al ₂ O ₃ . The first resin 160 may be dispensed before bonding the light emitting device 120 to attach and fix the light emitting device 120 on the body 113. Accordingly, the flow or tilt of the light emitting device 120 can be prevented. In addition, the first resin 160 may fix the light emitting device 120 to the body 113 even when the conductive material for bonding the light emitting device 120 is remelted.

When light is emitted to the bottom surface of the light emitting device 120, the first resin 160 may provide a light diffusion function between the light emitting device 120 and the body 113. When light is emitted from the light emitting device 120 to the bottom surface of the light emitting device 120, the first resin 160 may improve light extraction efficiency of the light emitting device package by providing a light diffusing function. In addition, the first resin 160 may reflect light emitted from the light emitting device 120. For example, when the first resin 160 includes a reflection function, the first resin 160 may be formed of a material including a metal oxide or impurities such as TiO ₂ , SiO ₂ , Al ₂ O _3. Can be.

The first resin 160 may contact the lower surface of the light emitting device 120 and the body 113. The first resin 160 may be in contact with the first and second bonding parts 121 and 122. The first resin 160 attaches the light emitting device 120 to the body 113 to increase the holding force of the light emitting device 120 and prevent the tilt of the light emitting device 120. Can be. The first resin 160 may provide a stable fixing force between the light emitting device 120 and the body 113. When the first resin 160 contacts the lower surface of the light emitting device 120 and the conductive material bonded to the light emitting device 120 is melted on the circuit board 201 as shown in FIG. 6, the light emission is performed. The flow of the device 120 may be prevented and the light emitting device 120 may be supported. That is, the first resin 160 may prevent the light emitting device 120 from flowing or tilting during the reflow process of the light emitting device package 100.

Body 113 according to an embodiment of the present invention may include a recess (R1). The recess R1 overlaps the light emitting device 120 and may be disposed in one or plural. At least a portion of the recess R1 may protrude outside the side surface of the light emitting device 120. The length of the second direction of the recess R1 may be smaller than the length of the first direction of the light emitting device 120. The length of the first direction of the recess R1 may be 40 micrometers or more, for example, in the range of 40 to 120 micrometers, such that the first resin 160 disposed in the recess R1 may function as an adhesive. Area can be provided. As another example, the recess R1 may have a length in the range of 40% to 120% of the length of the second direction of the light emitting device 120, and in this case, the recess R1 is a column in the first direction. By reducing the deformation, it is possible to suppress cracking of a material such as a conductive paste.

The first direction width of the recess R1 may be smaller than the gap between the first and second frames 111 and 112. The length in the second direction of the recess R1 is smaller than the length in the second direction of the light emitting device 120, and functions as a support protrusion of the first resin 160 under the light emitting device 120. can do. The length of the recess R1 in the second direction may be greater than the width of the recess R1 in the first direction.

The recess R1 may have a top view shape, a polygonal shape, for example, a triangular, square, or pentagonal shape. As another example, the recess R1 may be circular or elliptical and may be provided in a shape capable of guiding the first resin 160. The recess R1 may have a polygonal shape or a curved shape in a side cross-sectional shape, for example, a triangular shape, a square shape, or a hemispherical shape. The structure of the recess R1 may be provided in a structure in which the supporting force does not decrease while reducing the influence on the body 113.

The recess R1 may have an upper width greater than a lower width in a first direction. The recess R1 may have an upper width wider than a lower width in the first and second directions. The recess R1 may have a shape in which the upper width is wider than the lower width in the first direction. Since the recess R1 has a polygonal shape and an upper width is wider than a lower width, the recess R1 may be provided as an inclined surface. Accordingly, the first resin 160 may be guided and supported in the recess R1.

The first resin 160 may adhere the light emitting device 120 to the body 113. The first resin 160 may be disposed between the first bonding portion 121 and the second bonding portion 122 of the light emitting device 120 or may contact the first and second bonding portions 121 and 122. . The first resin 160 may be bonded to a region between the lower surface of the light emitting device 120 and the body 113. Accordingly, the first resin 160 may strengthen the lower adhesive force and the supporting force of the light emitting device 120. When bonding the bonding parts 121 and 122 of the light emitting device 120 or bonding to the circuit board, the problem that the light emitting device 120 is tilted by a conductive part can be prevented. The first resin 160 may be formed of a reflective resin material to diffuse light and improve reflection efficiency.

The first resin 160 disposed in the recess R1 may function as a support protrusion. The first resin 160 may provide a stable fixing force between the light emitting device 120 and the package body 110. The first resin 160 may provide a stable fixing force between the light emitting device 120 and the body 113. For example, the first resin 160 is in direct contact with the upper surface of the body 113 and disposed in the recess R1, and in contact with the lower surface of the light emitting device 120, thereby providing the light emitting device 120. ) Can be fixed.

As shown in FIG. 3, the body 113 may include first and second recesses R2 and R3 spaced apart from each other. The first and second recesses R2 and R3 may be spaced apart from each other in a second direction. The first and second recesses R2 and R3 may be disposed to have a long length in a second direction. At least some of the first and second recesses R2 and R3 may be disposed between the first frame 111 and the second frame 112. The first and second recesses R2 and R3 may be disposed on an upper portion of the body 113 disposed between the first frame 111 and the second frame 112.

The first and second recesses R2 and R3 may be recessed in a lower surface direction on an upper surface of the body 113. The first and second recesses R2 and R3 may be disposed under the light emitting device 120. At least some or all of the first and second recesses R2 and R3 may overlap with the light emitting device 120 in the Z direction. Since the first and second recesses R2 and R3 are disposed on the body 113, the first resin 160 may be disposed in the first and second recesses R2 and R3. . The first resin 160 disposed in the first and second recesses R2 and R3 may function as a support protrusion.

According to an embodiment of the present disclosure, the depths of the first and second recesses R2 and R3 may be provided smaller than the thickness of the first frame 111 or the thickness of the second frame 112. The depths of the recesses R2 and R3 may be determined in consideration of the adhesive force of the first resin 160. In addition, the depths of the recesses R2 and R3 may be determined in consideration of the stable strength of the body 113 and / or to prevent cracking of the conductive part due to heat emitted from the light emitting device 120. have.

Each of the first and second recesses R2 and R3 may include an inner portion overlapping the light emitting element 120 and an outer portion protruding outward from one side or the other side of the light emitting element 120. One side and the other side of the light emitting device 120 may be both side sides or long sides of the second direction. The second direction lengths of the inner portions of the first and second recesses R2 and R3 are disposed in the range of 40 micrometers or more, for example, 40 to 60 micrometers, and are arranged in the recesses R2 and R3. One resin 160 may provide an area that can function as an adhesive. The first and second recesses R2 and R3 may have a length ratio of an inner portion and an outer portion of 4: 6 to 6: 4. Outer portions of the recesses R2 and R3 may be disposed in regions not overlapping with the light emitting device 120 in the vertical direction, thereby reducing light loss at the bottom of the light emitting device 120. As another example, the body 113 may have a recess having a length in the range of 40% to 120% of the length of the second direction of the light emitting device 120, in which case the recess is in the first direction. By reducing the thermal deformation of the material, it is possible to suppress cracks of the same material as the conductive paste.

Outer parts of the first and second recesses R2 and R3 may be spaced apart from side surfaces S3 and S4 of the molding part 190. This is because when the first and second recesses R2 and R3 are connected to the side surfaces S3 and S4 of the molding unit 190, the first resin 160 has the side surfaces S3 of the molding unit 190. It may be exposed through, S4), a problem of light distribution or moisture penetration may occur.

Since the outer portions of the first and second recesses R2 and R3 are disposed outside the light emitting device 120, a problem in which voids are generated when disposed below the light emitting device 120 may be reduced. Accordingly, the first resin 160, which is an adhesive member, is provided on the plurality of recesses R2 and R3 and the body 113 to adhere the light emitting device 120 to the body 113, thereby emitting the light emitting device 120. ) Can strengthen your support.

1 and 3, the depths of the recesses R1, R2, and R3 may be smaller than the thickness of the body 113. The recesses R1, R2, and R3 may provide an appropriate space in which a kind of under fill process may be performed under the light emitting device 120. Here, the underfill process may be a process of disposing the light emitting device 120 on the package body 113 and then placing the first resin 160 under the light emitting device 120. The first resin 160 is disposed in the recesses R1, R2, and R3 to be mounted through the first resin 160 in the process of mounting the device 120 on the package body 113. It may be a process of attaching the light emitting device 120. The recesses R1, R2, and R3 may be provided to have a depth greater than or equal to a first depth so that the first resin 160 is sufficiently provided between the bottom surface of the light emitting device 120 and the top surface of the body 113. have.

1 and 3, the recesses R1, R2, and R3 may be provided below a second depth to provide stable strength of the body 113. The depth of the recesses R1, R2, and R3 may be in the range of 300 micrometers or less, for example, in the range of 15 to 300 micrometers or in the range of 15 to 50 micrometers, and when smaller than the range, the resin bearing capacity may be lowered If larger, the rigidity of the body 113 may be lowered, and the improvement of the bearing force may be insignificant, and may cause light leakage through the body 113.

The light emitting device package 100 according to the embodiment of the present invention may include a molding unit 190. The molding part 190 may be provided on the light emitting device 120. The molding part 190 may be disposed on the first frame 111 and the second frame 112. The molding part 190 may be disposed in the cavity 102 provided by the package body 113.

The molding part 190 may include an insulating material. In addition, the molding part 190 may include wavelength conversion means for receiving the light emitted from the light emitting device 120 and providing the wavelength-converted light. For example, the molding unit 190 may be at least one selected from the group including phosphors, quantum dots, and the like. The light emitting device 120 may emit light of blue, green, red, white, infrared or ultraviolet light. The phosphor or quantum dot may emit light of blue, green, and red. The molding part 190 may not be formed.

The molding part 190 may include an insulating material. The molding part 190 may include a transparent insulating material. The molding part 190 may include wavelength conversion means for receiving the light emitted from the light emitting device 120 and providing the wavelength-converted light. For example, the molding unit 190 may be at least one selected from the group including phosphors, quantum dots, and the like. The light emitting device 120 may emit light of blue, green, red, white, infrared or ultraviolet light. The phosphor or quantum dot may emit light of blue, green, and red. The molding part 190 may not be formed.

The phosphor disposed inside or below the molding unit 190 may include a phosphor of a fluoride compound, and may include, for example, at least one of an MGF phosphor, a KSF phosphor, or a KTF phosphor. The phosphor may emit light of different peak wavelengths, and the light emitted from the light emitting device may emit light of different yellow and red colors or different red peak wavelengths. One kind of the phosphor may include a red phosphor. The red phosphor may have a wavelength range of 610 nm to 650 nm, and the wavelength may have a half width of less than 10 nm. The red phosphor may include a fluoride phosphor. The fluorite-based phosphor is KSF-based red K ₂ SiF ₆ : Mn _{4 +} , K ₂ TiF ₆ : Mn _{4 +} , NaYF ₄ : Mn _{4 +} , NaGdF ₄ : Mn _{4 +} , K ₃ SiF ₇ : Mn _{4 +} It may include at least one of. The KSF-based fluorescent material, for example, K _a Si _{1 - c} F _b: may have a composition formula Mn ^{4 +} _c, wherein a is 1 ≤ a ≤ 2.5, wherein b is 5 ≤ b ≤ 6.5, wherein c is 0.001 ≤ c <0.1 may be satisfied. In addition, the fluorite-based red phosphor may further include an organic coating on the surface of the fluoride or Mn-containing fluoride or the surface of the fluoride coating does not contain Mn in order to improve the reliability at high temperature / high humidity. Unlike the other phosphors, the above-described fluerite-based red phosphor may implement a narrow width of 10 nm or less, and thus may be utilized in a high resolution device.

The phosphor composition according to the embodiment should basically conform to stoichiometry, and each element may be substituted with another element in each group on the periodic table. For example, Sr may be substituted with Ba, Ca, Mg, etc. of the alkaline earth (II) group, and Y may be substituted with Tb, Lu, Sc, Gd, etc. of the lanthanide series. In addition, the active agent Eu, etc. may be substituted by Ce, Tb, Pr, Er, Yb, etc. according to a desired energy level, and an active agent alone or a deactivator may be additionally applied to modify properties.

The quantum dot phosphor may include a II-VI compound or a III-V compound semiconductor, and may emit red light. The quantum dots are, for example, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, GaN, GaP, GaAs, GaSb, InP, InAs, In, Sb, AlS, AlP, AlAs, PbS, PbSe, Ge, Si, CuInS ₂ , Such as CuInSe ₂ and the like, and combinations thereof.

Meanwhile, the first and second frames 111 and 112 may include bending structures 10 and 20 to reinforce coupling with the body 113. The first frame 111 may include a first bending structure 10. The second frame 112 may include a second bending structure 20.

The first and second bending structures 10 and 20 may be disposed on opposite sides of the light emitting device 120. The first and second bending structures 10 and 20 may be disposed higher than an upper surface of the body 113 positioned at the bottom of the cavity. The first bending structure 10 may be bent in multiple stages in the body adjacent to the first side surface S1 of the body 113. The second bending structure 20 may be bent in multiple stages in the body adjacent to the second side surface S2 of the body 113.

For example, the first bending structure 10 may be provided in a structure bent to the outer side of the first frame 111 to increase the bonding area with the body 113 to suppress moisture penetration. The first bending structure 10 may be disposed between the upper surface S5 and the lower surface S6 of the upper body 110A. The first bent structure 10 may be disposed between the side surface 132 and the first side surface S1 of the cavity 102. The first bending structure 10 may include a structure bent at two or more levels.

The first bent structure 10 may include a first bent portion 11 bent from the first frame 111 in an upper surface S5 direction or a vertical direction, and may be horizontally or firstly formed from the first bent portion 11. The second bent portion 12 bent in the lateral direction, and the third bent portion 13 bent in the vertical direction or the lower surface (S6) from the second bent portion 12. The first bent part 11 extends in a vertical direction between the first frame 111 and the second bent part 12, and the second bent part 12 is formed by the first bent part 11 and the The third bent portion 13 may extend in a horizontal direction, and the third bent portion 13 may extend in a vertical direction between the second bent portion 12 and the first extension portion 15. The first to third bent portions (11, 12, 13) may be combined with the body 113 and the upper body (110A).

The first bent part 11 may be spaced apart from the side surface 132 of the cavity 102. The upper surface of the second bent portion 12 may be spaced apart from the upper surface S5 of the upper body 110A. The outer side surface Sa of the third bent portion 13 may be disposed on the same vertical plane as the first side surface S1. The outer side surface Sa of the third bent portion 13 may be exposed on the first side surface S1 of the body 113. The outer side Sa and the first extension part 15 of the third bent part 13 may be exposed to the outer side of the first side surface S1 of the body 113. Since the outer side surface Sa of the first bent structure 10 is disposed to be exposed to the first side surface S1 of the body 113, the first side surface Sa of the first bending structure 10 may be formed on the first pad 211 of the circuit board 201 as shown in FIG. 6. When joined with the one junction 221, the junction area can be increased. In addition, since the first joint part 221 contacts the outer surface of the third bent part 13 of the first frame 111 and the first extension part 15, the joint area of the first joint part 221 is improved. The electrical reliability of the first junction part 221 may be improved. In addition, since the first junction 221 is bonded to different planes on the outside of the first frame 111, heat dissipation characteristics and electrical conduction characteristics may be improved.

The second bending structure 20 is provided in a structure bent to the outer side of the second frame 112, it is possible to increase the bonding area with the body 113 to suppress moisture penetration. The second bending structure 20 may be disposed between the upper surface S5 and the lower surface S6 of the upper body 110A. The second bending structure 20 may be disposed between the side surface 132 and the second side surface S2 of the cavity 102. The second bending structure 20 may include a structure bent at two or more steps.

The second bending structure 20 may be a fourth bent portion 21 bent from the second frame 112 in the upper surface S5 direction or a vertical direction, and may be horizontally or secondly formed from the fourth bent portion 21. The fifth bent part 22 bent in the lateral direction and the sixth bent part 23 bent from the fifth bent part 22 in the lower surface (S6) direction or the vertical direction. The fourth bent portion 21 extends in a vertical direction between the second frame 112 and the fifth bent portion 22, and the fifth bent portion 22 is formed of the fourth bent portion 21 and the The sixth bent portion 23 may extend in the horizontal direction, and the sixth bent portion 23 may extend in the vertical direction between the fifth bent portion 22 and the second extension portion 25. The fourth to sixth bent parts 21, 22, and 23 may be combined with the body 113 and the upper body 110A.

The fourth bent portion 21 may be spaced apart from the side surface 132 of the cavity 102. The upper surface of the fifth bent portion 22 may be spaced apart from the upper surface S5 of the upper body 110A. The outer side surface Sb of the sixth bent portion 23 may be disposed on the same vertical plane as the second side surface S2. The outer side surface Sb of the sixth bent portion 23 may be exposed on the second side surface S2 of the body 113. The outer side surface Sb of the sixth bent portion 23 and the second extension portion 25 may be exposed to the outer side of the second side surface S2 of the body 113. Since the outer side surface Sb of the second bending structure 20 is disposed to be exposed to the second side surface S2 of the body 113, the second side surface Sb of the second bending structure 20 may be disposed on the second pad 213 of the circuit board 201 as shown in FIG. 6. When joined with the two junctions 223, the junction area can be increased. In addition, since the second joint part 223 contacts the outer surface Sb and the second extension part 25 of the sixth bent part 23 of the second frame 112, the joint area of the second joint part 223 is increased. As a result, the electrical reliability of the second junction part 223 may be improved. In addition, since the second junction part 223 is bonded to different planes on the outside of the second frame 112, heat dissipation characteristics and electric conduction characteristics may be improved.

Referring to FIG. 6, the circuit board 201 may be a printed circuit board (PCB). The circuit board 201 may include at least one of a resin PCB, a metal core PCB (MCPCB, metal core PCB), a flexible PCB (FPCB, flexible PCB), and a rigid PCB. In the circuit board 201, an insulating layer or a protective layer is disposed on a resin or metal base layer, and pads 211 and 213 exposed from the insulating layer or the protective layer are disposed. The pads 211 and 213 may electrically connect one or a plurality of light emitting device packages. The insulating layer or the protective layer may be a solder resist material or a resin material.

Each pad 211, 213 of the circuit board 201 is, for example, at least one selected from the group consisting of Ti, Cu, Ni, Au, Cr, Ta, Pt, Sn, Ag, P, Fe, Sn, Zn, Al It may include a material or an alloy thereof.

The first pad 211 is electrically connected to the first frame 111 through the first junction 221, and the second pad 213 is connected to the second through the second junction 223. It may be electrically connected to the frame 112. Here, the spacing between the two pads 211 and 213 may be provided wider than the bottom width of the cavity 102, thereby reducing interference between the two pads.

The first and second junctions 221 and 223 may include one material selected from the group consisting of Ag, Au, Pt, Sn, Cu, or an alloy thereof. The junction parts 221 and 223 may be combined with the material forming the frames 111 and 112 and the materials of the junction parts 221 and 223 to be joined by an intermetallic compound layer. The intermetallic compound may include at least one of Cu _x Sn _y , Ag _x Sn _y , Au _x Sn _y , and x may satisfy the condition of 0 <x <1, y = 1-x, x> y. Can be.

In the process of bonding the materials constituting the junction parts 221 and 223 and the frames 111 and 112, an intermetallic compound (IMC) layer may be formed between the junction parts 221 and 223 and the frames 111 and 112. For example, the junction parts 221 and 223 may be formed using a conductive paste. The conductive paste may include a solder paste, a silver paste, or the like, and may include a multilayer or a single layer composed of a multilayer or an alloy composed of different materials. For example, the junctions 221 and 223 may include a SAC (Sn-Ag-Cu) material. The junction parts 221 and 223 may include at least one intermetallic compound layer selected from the group including AgSn, CuSn, AuSn, and the like.

The embodiment of the present invention may provide the bending structures 10 and 20 to the frames 111 and 112 to enhance the coupling force with the body 113. The bending structures 10 and 20 of the frames 111 and 112 may reduce thermal deformation of the body 113 in the horizontal direction. Since it is disposed on the bottom of the body 113 on the bottom of the frame (111, 112), it is possible to block the moisture penetration through the interface between the frame (111,112) and the body 113 in the lower portion of the light emitting device (120). In addition, since the outer sides Sa and Sb of the bent structures 10 and 20 of the frames 111 and 112 are exposed to both sides of the body 113, the light emitting device package 100 may be disposed on the circuit board 201. Bonding area of the joints 221 and 223 may be increased when bonding, and reliability of the joints 221 and 223 may be improved through multi-faced bonding at the outer ends of the frames 111 and 112.

In addition, since the heights of the outer side surfaces Sa and Sb of the bent structures 10 and 20 of the frames 111 and 112 are provided to be higher than the thickness of the body 113, the joint area with the joint parts 221 and 223 may be increased.

FIG. 4 is a first modified example of the light emitting device package of FIG. 2. The configuration of FIG. 4 may optionally include the configuration disclosed above, and the description of the same configuration will be referred to the description disclosed above.

Referring to FIG. 4, the light emitting device package may include a plurality of through holes TH1 and TH2. The through holes TH1 and TH2 may be formed to penetrate the lower surface of the upper surface of the body 113. The through holes TH1 and TH2 may penetrate the frames 111 and 112 disposed in the body 113. One or a plurality of first through holes TH1 may be disposed in the first frame 111, and one or a plurality of second through holes TH2 may be disposed in the second frame 112. The first through hole TH1 may overlap the first frame 111 in a vertical direction. The second through hole TH2 may overlap the second frame 112 in a vertical direction.

The first and second through holes TH1 and TH2 may be provided through the upper and lower surfaces of the body 113 in the Z direction. The first and second through holes TH1 and TH2 may overlap the light emitting device 120 in the vertical direction Z. The first through hole TH1 may be disposed under the first bonding part 121 of the light emitting device 120. The first through hole TH1 may overlap the first bonding part 121 of the light emitting device 120 in a vertical direction. The first through hole TH1 may be provided to overlap with the first bonding part 121 of the light emitting device 120 in the Z direction from the upper surface of the body 113 to the lower surface. By exposing the first bonding part 121 through the first through hole TH1, the conductive part 321 having one or two or more kinds of conductive materials filled or disposed in the first through hole TH1. ) Can be provided as an electrical path and a heat dissipation path.

The second through hole TH2 may be disposed under the second bonding part 122 of the light emitting device 120. The second through hole TH2 may overlap the light emitting device 120 in a vertical direction. The second through hole TH2 may overlap the second bonding part 122 of the light emitting device 120 in a vertical direction. The second through hole TH2 may be provided to overlap with the second bonding part 122 of the light emitting device 120 in a direction from the upper surface of the body 113 to the lower surface. By exposing the second bonding part 122 through the second through hole TH2, the conductive part 323 having one or more kinds of conductive materials filled or disposed in the second through hole TH2. ) Can be provided as an electrical path and a heat dissipation path.

The first through hole TH1 and the second through hole TH2 may be spaced apart from each other in the first direction. The first through hole TH1 and the second through hole TH2 may be spaced apart from each other under a lower surface of the light emitting device 120.

The first through hole TH1 may have a width in the X direction and a length in the Y direction equal to each other, or a length in the Y direction greater than a width in the X direction. The second through hole TH2 may have a width in the X direction and a length in the Y direction equal to each other or a length in the Y direction greater than a length in the X direction. The width and length of the first and second through holes TH1 and TH2 in the first and second directions may vary according to the sizes of the first and second bonding parts 121 and 122. The width of the upper area of the first through hole TH1 in the X direction may be provided to be smaller than or equal to the width of the first bonding part 121. In addition, the width of the upper region of the second through hole TH2 in the X direction may be provided to be smaller than or equal to the width of the second bonding portion 122. The width of the first and second through holes TH1 and TH2 in the X direction may be the same or different from each other. Widths of the first and second bonding parts 121 and 122 in the X direction may be the same or different from each other. The length of the upper region of the first through hole TH1 in the Y direction may be smaller than or equal to the length of the first bonding part 121. In addition, the length of the upper region of the second through hole TH2 in the Y direction may be provided to be smaller than or equal to the length of the second bonding part 122. The lengths of the first and second through holes TH1 and TH2 in the Y direction may be the same or different from each other. The lengths of the first and second bonding parts 121 and 122 in the Y direction may be the same or different from each other. For example, an area of the lower surface of the first bonding part 121 may be larger than an area of the upper surface of the first through hole TH1. A lower surface area of the second bonding part 122 may be larger than an upper surface area of the second through hole TH2. The first and second through holes TH1 and TH2 may have a top shape and a bottom shape that are symmetrical or non-symmetrical. The first and second through holes TH1 and TH2 have a width in the same direction as the direction X in which the two bonding parts 121 and 122 of the light emitting device 111 overlap, and in which the two bonding parts 121 and 122 do not overlap. It may be smaller than the length of (Y).

The center of the upper surface and the lower surface of the first through hole TH1 may be disposed at the same center or may be disposed to be offset from each other. The center of the upper surface and the lower surface of the second through hole TH2 may be disposed at the same center or may be disposed to be offset from each other. Here, when the centers of the upper and lower surfaces of the first and second through holes TH1 and TH2 are disposed to be offset from each other, the linear distance between the centers of the upper surfaces of the two through holes TH1 and TH2 may be smaller than the linear distance between the lower centers. have.

The light emitting device package may include conductive parts 321 and 323 in the first and second through holes TH1 and TH2. The light emitting device package may include conductive parts such as conductive pastes 321 and 323, for example, solder paste and silver paste, in the first and second through holes TH1 and TH2. The conductive parts 321 and 323 may be connected to the frames 111 and 112 and the bonding parts 121 and 122, respectively. The conductive parts 321 and 323 may include one material selected from the group consisting of Ag, Au, Pt, Sn, Cu, or an alloy thereof. The conductive parts 321 and 323 may include at least one of Cu _x Sn _y- based, Ag _x Sn _y- based, Au _x Sn _y- based _{, and} SAC-based pastes, wherein x is 0 <x <1, y = 1−. The condition of x and x> y can be satisfied. The conductive paste may include a solder paste, a silver paste, or the like, and may include a multilayer or a single layer composed of a multilayer or an alloy composed of different materials.

The first conductive part 321 may be connected to the first frame 111 and the first bonding part 121 of the light emitting device 120 through the first through hole TH1. The second conductive part 323 may be connected to the second frame 112 and the second bonding part 122 of the light emitting device 120 through the second through hole TH2. The conductive parts 321 and 323 may be disposed inside the through holes TH1 and TH2 and may not be exposed to the lower portions of the through holes TH1 and TH2. When the conductive parts 321 and 323 are disposed in the through holes TH1 and TH2, the conductive parts 321 and 323 may be bonded with a conductive paste such as a bonding layer on the circuit board 201. Heights of the conductive parts 321 and 323 may be greater than a gap between the upper and lower surfaces of the body 113 or the thickness of the body 113. The first and second conductive parts 321 and 323 may be connected to each pad of the circuit board 201 shown in FIG. 6.

On the other hand, the light emitting device package includes a second resin (162). The second resin 162 may be disposed around the lower portion of the light emitting device 120. The second resin 162 may be disposed on the frames 111 and 112 and the body 113. The second resin 162 may be in contact with the bottom surface of the light emitting device 120. A portion of the second resin 162 may be in contact with the lower side of the light emitting device 120. The second resin 162 may reflect light emitted laterally from the light emitting device 120. The thickness of the second resin 162 may be smaller than the thickness of the light emitting device 120, and an upper surface height thereof may be lower than a lower surface of the light emitting structure 123 of the light emitting device 120.

The second resin 162 may include, for example, at least one of an epoxy-based material, a silicone-based material, a hybrid material including an epoxy-based material and a silicon-based material. Can be. In addition, the second resin 162 may be a reflector that reflects light emitted from the light emitting device 120, and may be, for example, a resin including a reflective material such as TiO ₂ or white silicone. It may include. The second resin 162 may be formed of a material different from that of the molding part 190, or may include impurities (eg, metal oxides) that are different from the types of impurities (eg, phosphors) that may be added to the molding part 190. can do.

The second resin 162 may be connected to the first resin 160 and may prevent the light emitting device 120 from flowing around the lower portion of the light emitting device 120 and suppress tilt. In some regions of the body 113 on which the second resin 162 is disposed, a concave recess may be disposed to strengthen the second resin 162.

5 is a second modified example of the light emitting device package of FIGS. 2 and 4. The configuration of FIG. 5 may optionally include the configuration disclosed above, and description of the same configuration will be referred to the description disclosed above.

Referring to FIG. 5, the light emitting device package may include conductive protrusions 51 and 52 under the light emitting device 120. The conductive protrusions 51 and 52 may be disposed in the first and second through holes TH1 and TH2. The conductive protrusions 51 and 52 may be adjacent to or connected to the first and second frames 111 and 112. The conductive protrusions 51 and 52 may be disposed in the first and second through holes TH1 and TH2 disposed in the first and second frames 111 and 112 and the body 113. The conductive protrusions 51 and 52 may include a first conductive protrusion 51 protruding from the first bonding portion 121 toward the lower surface of the body and a second protrusion protruding from the second bonding portion 122 toward the lower surface of the body. The conductive protrusion 52 may be included. The first and second conductive protrusions 51 and 52 may contact the conductive parts 321 and 323 filled in the through holes TH1 and TH2 described above, and may be connected to the pad of the circuit board of FIG. 6. The height or thickness of the first and second conductive protrusions 51 and 52 is provided to be larger than the thickness of the body 113, and the conductive portion injected into the first and second through holes TH1 and TH2 ( 321 and 323, and may face each pad of the circuit board. The first and second conductive protrusions 51 and 52 may be exposed to the lower surface of the body 113 through the first and second through holes TH1 and TH2.

The conductive protrusions 51 and 52 may have a columnar shape, for example, a circular columnar shape or a polygonal columnar shape. The conductive protrusions 51 and 52 may include metal pillars having seed layers disposed on the bonding portions 121 and 122 and protruding in a pillar shape on the seed layers. The metal pillar may include at least one of Cu, Au, and Ag. The metal pillar may have a bottom view shape of a circular pillar or a polygonal pillar. According to the embodiment of the present invention, since the conductive protrusions 51 and 52 are provided in the through holes TH1 and TH2, electrical reliability in the through holes may be improved.

The conductive parts 321 and 323 may include one material selected from the group consisting of Ag, Au, Pt, Sn, Cu, or an alloy thereof. The materials constituting the bonding parts 121 and 122 or the frames 111 and 112 and the materials of the conductive parts 321 and 222 may be combined to be bonded by an intermetallic compound layer. The intermetallic compound may include at least one of Cu _x Sn _y , Ag _x Sn _y , Au _x Sn _y , and x may satisfy the condition of 0 <x <1, y = 1-x, x> y. Can be.

The bonding parts 121 and 122 of the light emitting device 120 may be formed of a material constituting the conductive parts 321 and 323 and the conductive parts 321 and 323 or a heat treatment process after the conductive parts 321 and 323 are provided. An intermetallic compound (IMC) layer may be formed between the portions 321 and 323 and the bonding portions 121 and 122, or between the conductive portions 321 and 323 and the frames 111 and 112, or between the conductive portions 321 and 323. . For example, the conductive parts 321 and 323 may be formed using a conductive paste. The conductive paste may include a solder paste, a silver paste, or the like, and may include a multilayer or a single layer composed of a multilayer or an alloy composed of different materials. For example, the conductive parts 321 and 323 may include a SAC (Sn-Ag-Cu) material.

For example, an alloy layer may be formed by bonding between a material forming the conductive parts 321 and 323 and the metal of the bonding parts 121 and 122 or the frame. As a result, the conductive parts 321 and 323 and the bonding parts 121 and 122 or the frames 111 and 112 may be physically and electrically stably coupled. The conductive portions 321 and 323 and the alloy layer can be physically and electrically stable combined. The alloy layer may include at least one intermetallic compound layer selected from the group including AgSn, CuSn, AuSn, and the like. The intermetallic compound layer may be formed by combining a first material and a second material, the first material may be provided from the conductive parts 321 and 323, and the second material may be the bonding parts 121 and 122 or the frames 111 and 112. Can be provided from.

The intermetallic compound layer described above may have a higher melting point than other bonding materials. In addition, the heat treatment process in which the metal compound layer is formed may be performed at a lower temperature than the melting point of the general bonding material. Therefore, the light emitting device package 100 according to the embodiment does not deteriorate the electrical connection and the physical bonding force because the remelting phenomenon does not occur even when the main substrate is bonded through a reflow process. There is an advantage.

7 is a light emitting device package according to the second embodiment, which is a modified example of the bending structure of FIG. The configuration of FIG. 7 may optionally include the configuration disclosed above, and description of the same configuration will be referred to the description disclosed above.

Referring to FIG. 7, the light emitting device package 100A may arrange the bent structures 10a and 20a in the first and second frames 111 and 112. The first and second frames 111 and 112 may include bending structures 10a and 20a to reinforce coupling with the body 113. The first frame 111 may include a first bending structure 10a. The second frame 112 may include a second bending structure 20a.

For example, the first bending structure 10a may be provided as a structure bent at an outer side of the first frame 111 to increase the bonding area with the body 113 to suppress moisture penetration. The first bending structure 10a may be disposed between the upper surface S5 and the lower surface S6 of the upper body 110A. The first bending structure 10a may be disposed between the side surface 132 and the first side surface S1 of the cavity 102. The first bending structure 10a may include a structure bent at two or more levels.

The first bending structure 10a has a first bent portion 11a bent from the first frame 111 in the direction of the lower surface of the body (S6) or in a vertical direction, and is horizontally or firstly formed from the first bent portion 11a. A second bent portion 12a bent in one side direction, and a third bent portion 13a bent in an upper surface S5 direction or a vertical direction from the second bent portion 12a. The first bent part 11a extends in a vertical direction between the first frame 111 and the second bent part 12a, and the second bent part 12a is formed by the first bent part 11a and the second bent part 12a. The third bent portion 13a may extend in the horizontal direction, and the third bent portion 13a may extend in the vertical direction between the second bent portion 12a and the first extension portion 15a. The first to third bent portions (11a, 12a, 13a) may be combined with the body 113 and the upper body (110A). Here, the lower surface of the second bent portion 12a may be exposed to the lower surface S6 of the body 113, and thus may be bonded to the circuit board. The third bent portion 13a may be lower than the bottom surface of the first frame 111.

The first extension part 15a is disposed in a horizontal direction with the first frame 111 at the outer side of the first bending structure 10a and the outer side Sa is the first side surface S1 of the body 113. May be exposed. The exposed outer surface Sa of the first extension part 15a may be spaced apart from the lower surface S6 of the body 113. The lower surface of the third bent portion 13a and the side surface Sa of the first extension portion 15a are exposed to different side surfaces of the body 113, for example, the lower surface S6 and the first side surface S1. And spaced apart from one another.

The first bent portion 11a may be spaced apart from the side surface 132 of the cavity 102. Since the outer side surface Sa of the first bending structure 10a is disposed to be exposed to the first side surface S1 of the body 113, the first side surface Sa of the first bending structure 10a is disposed on the first pad 211 of the circuit board 201 as shown in FIG. 9. When joined with the one junction 221, the junction area can be increased. In addition, since the first joint part 221 contacts the outer surface Sa of the first extension part 15 of the first frame 111 and the lower surface of the second bent part 12a, the first joint part 221 of the first joint part 221 is formed. Since the junction area is improved, electrical reliability of the first junction 221 may be improved. In addition, since the first junction 221 is bonded to different planes on the outside of the first frame 111, heat dissipation characteristics and electrical conduction characteristics may be improved.

The second bending structure 20a may be provided in a structure bent at an outer side of the second frame 112 to increase the bonding area with the body 113 to suppress moisture penetration. The second bending structure 20a may be disposed between the upper surface S5 and the lower surface S6 of the upper body 110A. The second bending structure 20a may be disposed between the side surface 132 and the second side surface S2 of the cavity 102. The second bending structure 20a may include a structure bent at two or more levels.

The second bending structure 20a may be a fourth bent portion 21a bent from the second frame 112 in the direction of the lower surface of the body (S6) or in a vertical direction, and may be horizontally or horizontally formed from the fourth bent portion 21a. A fifth bent portion 22a bent in two side directions, and a sixth bent portion 23a bent from the fifth bent portion 22a in the direction of the upper body surface S5 or in a vertical direction. The fourth bent portion 21a extends in the vertical direction between the second frame 112 and the fifth bent portion 22a, and the fifth bent portion 22a is the fourth bent portion 21a and the The sixth bent portion 23a may extend in the horizontal direction, and the sixth bent portion 23a may extend in the vertical direction between the fifth bent portion 22a and the second extension portion 25. The fourth to sixth bent portions 21a, 22, and 23 may be combined with the body 113 and the upper body 110A. Here, the lower surface of the fifth bent portion 22a may be exposed to the lower surface S6 of the body 113, and may be bonded to the circuit board. The sixth bent portion 23a may be lower than the bottom surface of the second frame 111.

The second extension portion 25a is disposed in the horizontal direction with the second frame 112 at the outside of the second bending structure 20a and the outer side surface Sb is the second side surface S2 of the body 113. May be exposed. The exposed outer surface Sb of the second extension portion 25a may be spaced apart from the lower surface S6 of the body 113. The lower surface of the sixth bent portion 23a and the side surface Sb of the second extension portion 25a are exposed to different side surfaces of the body 113, for example, the lower surface S6 and the second side surface S2, respectively. And spaced apart from one another.

The fourth bent portion 21a may be spaced apart from the side surface 132 of the cavity 102. The upper surface of the fifth bent portion 22a may be spaced apart from the upper surface S5 of the upper body 110A. The outer side surface Sb of the second extension portion 25a may be disposed on the same vertical plane as the second side surface S2. The outer side surface Sb of the second extension portion 25a may be exposed on the second side surface S2 of the body 113. Since the outer side surface Sb of the second bending structure 20a is disposed to be exposed to the second side surface S2 of the body 113, the second side surface Sb of the second bending structure 20a may be disposed on the second pad 213 of the circuit board 201 as shown in FIG. 9. When joined with the two junctions 223, the junction area can be increased. In addition, since the second joint part 223 is in contact with the lower surface of the sixth bent part 23a of the second frame 112 and the outer surface Sb of the second extension part 25a, the second joint part 223 Since the junction area is improved, the electrical reliability of the second junction 223 may be improved. In addition, since the second junction part 223 is bonded to different planes on the outside of the second frame 112, heat dissipation characteristics and electric conduction characteristics may be improved.

The embodiment of the present invention may provide the bending structures 10a and 20a to the frames 111 and 112 to enhance the coupling force with the body 113. The bending structures 10a and 20a of the frames 111 and 112 may reduce thermal deformation in the horizontal direction of the body 113. Since it is disposed on the bottom of the body 113 on the bottom of the frame (111, 112), it is possible to block the moisture penetration through the interface between the frame (111,112) and the body 113 in the lower portion of the light emitting device (120). In addition, according to the embodiment of the present invention, since the outer side surfaces Sa and Sb of the bent structures 10a and 20a of the frames 111 and 112 are exposed to both sides of the body 113, the light emitting device package 100 on the circuit board 201. Bonding area of the joints 221 and 223 may be increased when bonding, and reliability of the joints 221 and 223 may be improved through multi-faced bonding at the outer ends of the frames 111 and 112.

In addition, since the heights of the outer side surfaces Sa and Sb of the bent structures 10a and 20a of the frames 111 and 112 are provided higher than the thickness of the body 113, the junctions with the junction portions 221 and 223 on the circuit board shown in FIG. The area can be increased. Accordingly, electrical reliability by the joints 221 and 223 can be improved.

FIG. 8 is a first modified example of the light emitting device package of FIG. 7. The configuration of FIG. 8 may optionally include the configuration disclosed above, and description of the same configuration will be referred to the description disclosed above.

Referring to FIG. 8, the light emitting device package may include a plurality of through holes TH1 and TH2. The through holes TH1 and TH2 may be formed to penetrate the lower surface of the upper surface of the body 113. The through holes TH1 and TH2 may penetrate the frames 111 and 112 disposed in the body 113. One or a plurality of first through holes TH1 may be disposed in the first frame 111, and one or a plurality of second through holes TH2 may be disposed in the second frame 112. The first through hole TH1 may overlap the first frame 111 in a vertical direction. The second through hole TH2 may overlap the second frame 112 in a vertical direction.

The first and second through holes TH1 and TH2 may be provided through the upper and lower surfaces of the body 113 in the Z direction. The first and second through holes TH1 and TH2 may overlap the light emitting device 120 in the vertical direction Z. The first through hole TH1 may be disposed under the first bonding part 121 of the light emitting device 120. The first through hole TH1 may overlap the first bonding part 121 of the light emitting device 120 in a vertical direction. The first through hole TH1 may be provided to overlap with the first bonding part 121 of the light emitting device 120 in the Z direction from the upper surface of the body 113 to the lower surface. By exposing the first bonding part 121 through the first through hole TH1, the conductive part 321 having one or two or more kinds of conductive materials filled or disposed in the first through hole TH1. ) Can be provided as an electrical path and a heat dissipation path.

The second through hole TH2 may be disposed under the second bonding part 122 of the light emitting device 120. The second through hole TH2 may overlap the light emitting device 120 in a vertical direction. The second through hole TH2 may overlap the second bonding part 122 of the light emitting device 120 in a vertical direction. The second through hole TH2 may be provided to overlap with the second bonding part 122 of the light emitting device 120 in a direction from the upper surface of the body 113 to the lower surface. By exposing the second bonding part 122 through the second through hole TH2, the conductive part 323 having one or more kinds of conductive materials filled or disposed in the second through hole TH2. ) Can be provided as an electrical path and a heat dissipation path.

The first through hole TH1 and the second through hole TH2 may be spaced apart from each other in the first direction. The first through hole TH1 and the second through hole TH2 may be spaced apart from each other under a lower surface of the light emitting device 120.

The light emitting device package may include conductive protrusions 51 and 52 under the light emitting device 120. The conductive protrusions 51 and 52 may be disposed in the first and second through holes TH1 and TH2. The conductive protrusions 51 and 52 may be adjacent to or connected to the first and second frames 111 and 112. The conductive protrusions 51 and 52 may be disposed in the first and second through holes TH1 and TH2 disposed in the first and second frames 111 and 112 and the body 113. The conductive protrusions 51 and 52 may include a first conductive protrusion 51 protruding from the first bonding portion 121 toward the lower surface of the body and a second protrusion protruding from the second bonding portion 122 toward the lower surface of the body. The conductive protrusion 52 may be included. The first and second conductive protrusions 51 and 52 may contact the conductive parts 321 and 323 filled in the through holes TH1 and TH2 described above, and may be connected to the pad of the circuit board of FIG. 6. The height or thickness of the first and second conductive protrusions 51 and 52 is provided to be larger than the thickness of the body 113, and the conductive portion injected into the first and second through holes TH1 and TH2 ( 321 and 323, and may face each pad of the circuit board. The first and second conductive protrusions 51 and 52 may be exposed to the lower surface of the body 113 through the first and second through holes TH1 and TH2.

The conductive protrusions 51 and 52 may have a columnar shape, for example, a circular columnar shape or a polygonal columnar shape. The conductive protrusions 51 and 52 may include metal pillars having seed layers disposed on the bonding portions 121 and 122 and protruding in a pillar shape on the seed layers. The metal pillar may include at least one of Cu, Au, and Ag. The metal pillar may have a bottom view shape of a circular pillar or a polygonal pillar. According to the embodiment of the present invention, since the conductive protrusions 51 and 52 are provided in the through holes TH1 and TH2, electrical reliability in the through holes may be improved.

The conductive parts 321 and 323 may include one material selected from the group consisting of Ag, Au, Pt, Sn, Cu, or an alloy thereof. The materials constituting the bonding parts 121 and 122 or the frames 111 and 112 and the materials of the conductive parts 321 and 222 may be combined to be bonded by an intermetallic compound layer. The intermetallic compound may include at least one of Cu _x Sn _y , Ag _x Sn _y , Au _x Sn _y , and x may satisfy the condition of 0 <x <1, y = 1-x, x> y. Can be.

The bonding parts 121 and 122 of the light emitting device 120 may be formed of a material constituting the conductive parts 321 and 323 and the conductive parts 321 and 323 or a heat treatment process after the conductive parts 321 and 323 are provided. An intermetallic compound (IMC) layer may be formed between the portions 321 and 323 and the bonding portions 121 and 122, or between the conductive portions 321 and 323 and the frames 111 and 112, or between the conductive portions 321 and 323. . For example, the conductive parts 321 and 323 may be formed using a conductive paste. The conductive paste may include a solder paste, a silver paste, or the like, and may include a multilayer or a single layer composed of a multilayer or an alloy composed of different materials. For example, the conductive parts 321 and 323 may include a SAC (Sn-Ag-Cu) material.

For example, an alloy layer may be formed by bonding between a material forming the conductive parts 321 and 323 and the metal of the bonding parts 121 and 122 or the frame. As a result, the conductive parts 321 and 323 and the bonding parts 121 and 122 or the frames 111 and 112 may be physically and electrically stably coupled. The conductive portions 321 and 323 and the alloy layer can be physically and electrically stable combined. The alloy layer may include at least one intermetallic compound layer selected from the group including AgSn, CuSn, AuSn, and the like. The intermetallic compound layer may be formed by combining a first material and a second material, the first material may be provided from the conductive parts 321 and 323, and the second material may be the bonding parts 121 and 122 or the frames 111 and 112. Can be provided from.

The intermetallic compound layer described above may have a higher melting point than other bonding materials. In addition, the heat treatment process in which the metal compound layer is formed may be performed at a lower temperature than the melting point of the general bonding material. Therefore, the light emitting device package 100 according to the embodiment does not deteriorate the electrical connection and the physical bonding force because the remelting phenomenon does not occur even when the main substrate is bonded through a reflow process. There is an advantage.

10 is a cross-sectional view showing an example of a light emitting device applied to the light emitting device package according to an embodiment of the present invention.

Referring to FIG. 10, the light emitting device conceptually illustrates only a relative arrangement relationship between the first electrode 627 and the second electrode 628. The first electrode 627 may include a first bonding part 621 and a first branch electrode 625. The second electrode 628 may include a second bonding part 622 and a second branch electrode 626.

The light emitting device may include a light emitting structure 623 disposed on the substrate 624. The substrate 624 may be selected from the group including sapphire substrate (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, Ge. For example, the substrate 624 may be provided as a patterned sapphire substrate (PSS) having an uneven pattern formed on an upper surface thereof.

The light emitting structure 623 may include a first conductive semiconductor layer 623a, an active layer 623b, and a second conductive semiconductor layer 623c. The active layer 623b may be disposed between the first conductivity type semiconductor layer 623a and the second conductivity type semiconductor layer 623c. For example, the active layer 623b may be disposed on the first conductive semiconductor layer 623a, and the second conductive semiconductor layer 623c may be disposed on the active layer 623b.

In example embodiments, the first conductivity-type semiconductor layer 623a may be provided as an n-type semiconductor layer, and the second conductivity-type semiconductor layer 623c may be provided as a p-type semiconductor layer. Of course, according to another embodiment, the first conductive semiconductor layer 623a may be provided as a p-type semiconductor layer, and the second conductive semiconductor layer 623c may be provided as an n-type semiconductor layer.

The light emitting device may include a first electrode 627 and a second electrode 628. The first electrode 627 may include a first bonding part 621 and a first branch electrode 625. The first electrode 627 may be electrically connected to the second conductivity type semiconductor layer 623c. The first branch electrode 625 may be branched from the first bonding part 621. The first branch electrode 625 may include a plurality of branch electrodes branched from the first bonding part 621. The second electrode 628 may include a second bonding part 622 and a second branch electrode 626. The second electrode 628 may be electrically connected to the first conductivity type semiconductor layer 623a. The second branch electrode 626 may be branched from the second bonding part 622. The second branch electrode 626 may include a plurality of branch electrodes branched from the second bonding part 622.

The first branch electrode 625 and the second branch electrode 626 may be alternately arranged in a finger shape. Power supplied through the first bonding portion 621 and the second bonding portion 622 by the first branch electrode 625 and the second branch electrode 626 to the entire light emitting structure 623. It can be spread and provided.

The first electrode 627 and the second electrode 628 may be formed in a single layer or a multilayer structure. For example, the first electrode 627 and the second electrode 628 may be ohmic electrodes. For example, the first electrode 627 and the second electrode 628 are ZnO, IrOx, RuOx, NiO, RuOx / ITO, Ni / IrOx / Au, and Ni / IrOx / Au / ITO, Ag, Ni At least one of Cr, Ti, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, or an alloy of two or more of these materials.

Meanwhile, a protective layer may be further provided on the light emitting structure 623. The protective layer may be provided on an upper surface of the light emitting structure 623. In addition, the protective layer may be provided on the side surface of the light emitting structure 623. The protective layer may be provided to expose the first bonding portion 621 and the second bonding portion 622. In addition, the protective layer may be selectively provided on the circumference and the lower surface of the substrate 624.

For example, the protective layer may be provided as an insulating material. For example, the protective layer is Si _x O _y , SiO _x N _y , Si _x N _y , Al _x O _y It may be formed of at least one material selected from the group containing.

In the light emitting device according to the embodiment, the light generated in the active layer 623b may be emitted in the six plane direction of the light emitting device. Light generated by the active layer 623b may be emitted in six plane directions through the top, bottom, and four side surfaces of the light emitting device.

As another example of the light emitting device, at least one of the first electrode and the second electrode may be implemented in a pattern form, and a conductive protrusion may be disposed on the electrode of the pattern form. The pattern may include a pattern having one or more arm shapes or branch shapes. Alternatively, conductive protrusions may be disposed on each bonding portion of the light emitting device. The light emitting device has been described as having a light emitting cell. When the light emitting cell includes the light emitting structure, the driving voltage of the light emitting device may be a voltage applied to one light emitting cell. As an example of the light emitting device disclosed in the embodiment, a light emitting device having two light emitting cells may be disclosed.

The light emitting device disclosed above has been described as a structure having one light emitting cell. When the light emitting cell includes the light emitting structure, the driving voltage of the light emitting device may be a voltage applied to one light emitting cell. Examples of the light emitting device disclosed in the embodiment may include a light emitting device having two or three or more light emitting cells. Accordingly, a high voltage light emitting device package can be provided.

In addition, according to the light emitting device package and the light emitting device package manufacturing method according to an embodiment of the invention, the body 113 does not need to be exposed to high temperatures in the process of manufacturing the light emitting device package. Therefore, according to the embodiment of the present invention, the body 113 may be prevented from being damaged or discolored due to exposure to high temperature. Accordingly, the selection range for the material constituting the body 113 can be widened. According to an embodiment of the present invention, the body 113 may be provided using a relatively inexpensive resin material as well as an expensive material such as a ceramic. For example, the body 115 may include at least one material selected from the group consisting of PolyPhtalAmide (PPA) resins, PolyCyclohexylenedimethylene Terephthalate (PCT) resins, epoxy molding compound (EMC) resins, and silicone molding compound (SMC) resins. can do.

Meanwhile, the light emitting device package according to the embodiment may be applied to the light source device.

In addition, the light source device may include a display device, a lighting device, a head lamp, or the like according to an industrial field.

As an example of the light source device, the display device includes a bottom cover, a reflector disposed on the bottom cover, a light emitting module emitting light and including a light emitting element, and a light disposed in front of the reflector and guiding light emitted from the light emitting module to the front. An optical sheet including a light guide plate, prism sheets disposed in front of the light guide plate, a display panel disposed in front of the optical sheet, an image signal output circuit connected to the display panel and supplying an image signal to the display panel; It may include a color filter disposed in front. The bottom cover, the reflector, the light emitting module, the light guide plate, and the optical sheet may form a backlight unit. In addition, the display device does not include a color filter and may have a structure in which light emitting devices emitting red, green, and blue light are disposed.

As another example of the light source device, the head lamp may be implemented as a light emitting module or a lighting module including a light emitting device package disposed on a substrate, and the light irradiated from the light emitting module or the lighting module in a predetermined direction, for example, front Reflector reflecting light to the lens, a lens for refracting the light reflected by the reflector forward, and a shade to block or reflect a part of the light reflected by the reflector to the lens to achieve the desired light distribution pattern It may include.

Another example of a light source device may include a lighting device, a cover, a light source module, a heat sink, a power supply, an inner case, and a socket. In addition, the light source device according to the embodiment may further include any one or more of the member and the holder. The light source module may include a light emitting device package according to the embodiment.

Features, structures, effects, etc. described in the above embodiments are included in at least one embodiment, but are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be interpreted that the contents related to such a combination and modification are included in the scope of the embodiments.

Although the above description has been made with reference to the embodiments, these are only examples and are not intended to limit embodiments. It will be appreciated that eggplant modifications and applications are possible. For example, each component specifically shown in the embodiment can be modified. And differences related to such modifications and applications will have to be construed as being included in the scope of the embodiments set out in the appended claims.

110: package body
111,112: frames
113: body
120: light emitting element
121: first bonding part
122: second bonding portion
123: light emitting structure
124: substrate
160: first resin
162: second resin
321,323: Challenge
R1, R2, R3: recess
10,10a, 20,20a: bending structure

Claims (10)

A first frame and a second frame disposed spaced apart from each other and including an upper surface and a lower surface, respectively;
A body disposed between the first frame and the second frame; And
A light emitting device including a first bonding part facing the first frame and a second bonding part facing the second frame on the body; Including,
The body includes first and second sides facing each other and third and fourth sides facing each other,
The first frame includes a first bending structure bent in multiple stages in the body adjacent to the first side of the body,
The second frame includes a second bending structure bent in multiple stages in the body adjacent to the second side of the body,
The first and second frames are spaced apart from the lower surface of the body overlapping the light emitting device,
The first frame is exposed to the lower surface and the first side of the body, respectively
The light emitting device package is exposed on the lower surface and the second side of the body of the second frame, respectively. The method of claim 1,
The first frame includes a first extension portion disposed outside the first side of the body,
The first extension portion extends outward from the first bending structure,
The second frame includes a second extending portion disposed outside the second side of the body,
The second extending portion is a light emitting device package extending in an outward direction from the second bent structure. The method of claim 2,
The first bent structure may include a first bent portion bent from the first frame in the direction of the upper surface of the body, a second bent portion bent in the first side direction of the body from the first bent portion, and the second bent portion. It includes a third bent portion bent in the lower surface direction of the body,
The outer surface of the third bent portion is a light emitting device package exposed on the first side of the body. The method of claim 3,
The second bent structure may include a fourth bent part bent from the second frame in the direction of the upper surface of the body, a fifth bent part bent from the fourth bent part in the second side direction of the body, and the fifth bent part. A sixth bent portion bent in the lower surface direction of the body,
An outer surface of the sixth bent portion is exposed to the second side of the body of the light emitting device package. The method of claim 2,
The first bending structure may include a first bending portion bent from the first frame toward the lower surface of the body, a second bending portion bent from the first bending portion in a first side direction of the body, and the second bending portion from the first bending portion. It includes a third bent portion bent in the upper direction of the body,
The lower surface of the second bent portion is a light emitting device package exposed on the lower surface of the body. The method of claim 5,
The second bending structure may include a fourth bending portion bent from the second frame toward the lower surface of the body, a fifth bending portion bent from the fourth bending portion in a second side direction of the body, and the fifth bending portion. It includes a sixth bent portion bent in the upper direction of the body,
The lower surface of the fifth bent portion is exposed to the lower side of the body of the light emitting device package. The method according to any one of claims 1 to 6,
The body is formed of a resin material,
A first resin between the light emitting device and the body,
The first resin light emitting device package is disposed between the first and the second bonding portion. The method of claim 7, wherein
The body includes a first recess recessed below the light emitting element,
The light emitting device package in which the first resin is disposed in the first recess. The method according to any one of claims 1 to 6,
The body has a plurality of through holes penetrating the first and second frames in the vertical direction,
The lower surface of the first and second frame is a light emitting device package spaced apart from the lower surface of the body. A circuit board having first and second pads thereon; And
One or a plurality of light emitting device packages are disposed on the circuit board,
The light emitting device package is a light source device of any one of claims 1 to 6.

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