KR20190078096A - Semiconductor device package - Google Patents

Abstract

The present invention provides a semiconductor device package capable of double-sided light emission. According to an embodiment of the present invention, the semiconductor device package comprises: a substrate including a plurality of through holes; a plurality of first semiconductor devices arranged on a first surface of the substrate; a plurality of second semiconductor devices arranged on a second surface of the substrate; a connection electrode arranged on the second surface and electrically connecting the plurality of second semiconductor devices; and a conductive member arranged in the through hole. The conductive member electrically connects the first semiconductor device and the connection electrode. The plurality of first semiconductor devices overlap the second semiconductor device in a thickness direction.

Description

[0001] SEMICONDUCTOR DEVICE PACKAGE [0002]

An embodiment relates to a semiconductor device package.

Semiconductor devices including compounds such as GaN and AlGaN are widely used as light emitting devices, light receiving devices and various diodes because they have many advantages such as wide and easy bandgap energy.

Particularly, a light emitting device such as a light emitting diode or a laser diode using a semiconductor material of Group 3-5 or 2-6 group semiconductors can be applied to various devices such as a red, Blue, and ultraviolet rays. By using fluorescent materials or combining colors, it is possible to realize a white light beam with high efficiency. Also, compared to conventional light sources such as fluorescent lamps and incandescent lamps, low power consumption, , Safety, and environmental friendliness.

In addition, when a light-receiving element such as a photodetector or a solar cell is manufactured using a semiconductor material of Group 3-5 or Group 2-6 compound semiconductor, development of a device material absorbs light of various wavelength regions to generate a photocurrent , It is possible to use light in various wavelength ranges from the gamma ray to the radio wave region. It also has advantages of fast response speed, safety, environmental friendliness and easy control of device materials, so it can be easily used for power control or microwave circuit or communication module.

However, in the conventional semiconductor device package, there is a problem that the semiconductor element is disposed on only one side of the substrate, and light emission on both sides is difficult. Particularly, when a filament of an incandescent bulb is replaced with a semiconductor element, a semiconductor element package capable of emitting light on both sides is required.

The embodiment provides a semiconductor device package capable of both-side light emission.

The problems to be solved by the present invention are not limited to the above-mentioned problems, and other problems not mentioned here can be understood by those skilled in the art from the following description.

A semiconductor device package according to an embodiment includes a substrate including a plurality of through holes; A plurality of first semiconductor elements disposed on a first side of the substrate; A plurality of second semiconductor elements disposed on a second surface of the substrate; A connecting electrode disposed on the second surface and electrically connecting the plurality of second semiconductor elements; And a conductive member disposed in the through hole, wherein the conductive member electrically connects the first semiconductor element and the connection electrode, and the plurality of first semiconductor elements overlap with the second semiconductor element in the thickness direction do.

A first junction member disposed between the substrate and the plurality of first semiconductor elements; And

And a second bonding member disposed between the substrate and the plurality of second semiconductor elements.

The melting point of the first joining member may be lower than the melting point of the second joining member.

The minimum thickness of the first bonding member from the substrate may be less than the minimum thickness of the second bonding member from the substrate.

The first bonding member and the second bonding member may have a lower melting point than the conductive member.

The connection electrode may be disposed between the substrate and the plurality of second semiconductor elements.

The plurality of first semiconductor elements and the plurality of second semiconductor elements may be disposed to face each other in the thickness direction.

According to the embodiment, both-side emission of the semiconductor device package becomes possible.

The various and advantageous advantages and effects of the present invention are not limited to the above description, and can be more easily understood in the course of describing a specific embodiment of the present invention.

1 is a cross-sectional view of a semiconductor device package according to an embodiment,
2 is a perspective view of a semiconductor device package according to an embodiment of the present invention,
3 is a conceptual diagram of a semiconductor device according to an embodiment,
Fig. 4 is an enlarged view of a portion A in Fig. 1,
5A and 5B are a top view and a bottom view of the semiconductor device package according to the embodiment,
6 is a flowchart of a method of manufacturing a semiconductor device package according to an embodiment,
7 is a cross-sectional view of a semiconductor device package according to another embodiment,
8 is a cross-sectional view of a semiconductor device package according to another embodiment,
9 is a conceptual diagram of a filament lamp according to an embodiment of the present invention.

The present invention is capable of various modifications and various embodiments, and specific embodiments are illustrated and described in the drawings. It should be understood, however, that the invention is not intended to be limited to the particular embodiments, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention.

The terms including ordinal, such as second, first, etc., may be used to describe various elements, but the elements are not limited to these terms. The terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the second component may be referred to as a first component, and similarly, the first component may also be referred to as a second component. And / or < / RTI > includes any combination of a plurality of related listed items or any of a plurality of related listed items.

It is to be understood that when an element is referred to as being "connected" or "connected" to another element, it may be directly connected or connected to the other element, . On the other hand, when an element is referred to as being "directly connected" or "directly connected" to another element, it should be understood that there are no other elements in between.

The terminology used in this application is used only to describe a specific embodiment and is not intended to limit the invention. The singular expressions include plural expressions unless the context clearly dictates otherwise. In the present application, the terms "comprises" or "having" and the like are used to specify that there is a feature, a number, a step, an operation, an element, a component or a combination thereof described in the specification, But do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.

Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms such as those defined in commonly used dictionaries are to be interpreted as having a meaning consistent with the contextual meaning of the related art and are to be interpreted as either ideal or overly formal in the sense of the present application Do not.

Hereinafter, embodiments will be described in detail with reference to the accompanying drawings, wherein like or corresponding elements are denoted by the same reference numerals, and redundant description thereof will be omitted.

1 is a cross-sectional view of a semiconductor device package according to an embodiment, FIG. 2 is a perspective view of a semiconductor device package according to an embodiment of the present invention, FIG. 3 is a conceptual diagram of a semiconductor device according to an embodiment, .

1 and 2, a semiconductor device package according to an embodiment includes a substrate 10 including a through hole h, a connecting electrode 30 disposed on the substrate 10, a through hole h, A first semiconductor element 20A and a second semiconductor element 20B which are respectively disposed on a first surface S1 and a second surface S2 of the substrate 10, A first bonding member 50 disposed between the element 20A and the substrate 10, a second bonding member 40 disposed between the second semiconductor element 20B and the substrate 100, 60, a second phosphor layer 70, and a power source pad.

First, the substrate 10 may be in the form of a rod, and a plurality of semiconductor devices 10 may be connected along the shape of the substrate 10. However, the shape of the substrate 10 is not limited thereto and can be variously changed. The substrate 10 may include a first surface S1 and a second surface S2. The first surface S1 and the second surface S2 may be surfaces facing each other, but are not limited thereto. Hereinafter, the first surface S1 and the second surface S2 are described as facing surfaces.

A plurality of first semiconductor elements 20A and second semiconductor elements 20B disposed on the first surface S1 and the second surface S2 may be connected in series / parallel to each other, . However, the connection structure of the semiconductor element 10 is not limited thereto.

The substrate 10 may include an epoxy resin, but not limited thereto, and may include an acrylic resin, a silicone resin, or the like. The particles dispersed in the substrate 10 may be ceramics and at least one of the particles may include at least one selected from Al2O3, AlN, BN, Si3N4, SiC (SiC-BeO), BeO, CeO, With this structure, the substrate 10 can be improved in heat conductivity and heat radiation performance can be improved. That is, the substrate 10 can radiate heat generated by driving the first semiconductor element 20A and the second semiconductor element 20B to the outside.

A plurality of first semiconductor elements 20A may be disposed on the first surface S1 of the substrate 10. [ In addition, the plurality of second semiconductor elements 20B may be disposed on the second surface of the substrate 10. Most of the plurality of first semiconductor elements 20A emits light to the upper portion and the plurality of second semiconductor elements 20B emits most of light to the lower portion. Therefore, the semiconductor device package according to the embodiment can emit light in both directions.

The plurality of first semiconductor elements 20A and the plurality of second semiconductor elements 20B may be arranged to face each other in the thickness direction of the substrate 10. [ However, the present invention is not limited thereto.

The substrate 10 may include a plurality of through holes h. The plurality of through holes (h) may be spaced apart. For example, the plurality of through holes h may be formed at regular intervals in the first direction (x direction). Here, the first direction (x direction) is a direction perpendicular to the second direction (y direction), and the second direction (y direction) is the thickness direction of the semiconductor element. Hereinafter, Direction, and the second direction (y direction) is described as a vertical direction)

The conductive member 11 may be inserted into the plurality of through holes h. The conductive member 11 can electrically connect the first semiconductor element 20A and the second semiconductor element 20B disposed on different surfaces. The conductive member 11 may include Ag, AuSn, SnAg, SnPb, SnCu, SnCuNi, SnAg, SAC, and the like, but is not limited thereto. The conductive member 11 includes a body 11b disposed in the through hole h, a first layer 11a disposed under the through hole h, and a second layer 11c disposed on the through hole h. . ≪ / RTI > The conductive member 11 may have a melting point of 220 to 250 degrees.

First, the body 11b is disposed in the through hole h to electrically connect the first layer 11a and the second layer 11c.

The first layer 11a may be disposed between the second surface S2 of the substrate 10 and the connecting electrode 30. [ The first layer 11a may be electrically connected to the connection electrode 30. The first layer 11a may be disposed apart from the first layer 11a of the adjacent conductive member inserted in the through hole h.

The second layer 11c may be disposed between the first surface S1 of the substrate and the first semiconductor element 20A. The second layer 11c may be electrically connected to the pad of the first semiconductor element 20A. A description of the length and the like with respect to the conductive member 11 will be described later with reference to FIG.

Next, the structure of the first semiconductor element 20A and the second semiconductor element 20B will be described.

3, the semiconductor device includes a semiconductor element 22 disposed under the support substrate 21, and first and second electrode pads 25a and 25b disposed on one side of the semiconductor element 22 Emitting device. In the embodiment, the first and second electrode pads 25a and 25b are disposed under the semiconductor element 22.

The supporting substrate 21 includes a conductive substrate or an insulating substrate. The support substrate 21 may be a material suitable for semiconductor material growth or a carrier wafer. The supporting substrate 21 may be formed of a material selected from among sapphire (Al 2 O 3), SiC, GaAs, GaN, ZnO, Si, GaP, InP and Ge. The supporting substrate 21 can be removed as needed.

The semiconductor element 22 includes a first conductivity type semiconductor layer 22a, an active layer 22b, and a second conductivity type semiconductor layer 22c. In general, the semiconductor device 22 may be cut along with the support substrate 21 and separated into a plurality of semiconductor devices.

The first conductivity type semiconductor layer 22a may be formed of a compound semiconductor such as a group III-V or II-VI group, and the first conductivity type semiconductor layer 22a may be doped with a first dopant. The first conductivity type semiconductor layer 22a is a semiconductor material having a composition formula of InxAlyGa1-x-yN (0? X? 1, 0? Y? 1, 0? X + y? 1), for example, GaN, AlGaN, InGaN, InAlGaN, and the like. The first dopant may be an n-type dopant such as Si, Ge, Sn, Se, or Te. When the first dopant is an n-type dopant, the first conductivity type semiconductor layer 22a doped with the first dopant may be an n-type semiconductor layer.

The active layer 22b is a layer where electrons (or holes) injected through the first conductivity type semiconductor layer 22a and holes (or electrons) injected through the second conductivity type semiconductor layer 22c meet. The active layer 22b transitions to a low energy level as electrons and holes are recombined, and light having a wavelength corresponding thereto can be generated.

The active layer 22b may have any one of a single well structure, a multiple well structure, a single quantum well structure, a multi quantum well (MQW) structure, a quantum dot structure, Is not limited thereto.

The second conductivity type semiconductor layer 22c may be formed on the active layer 22b and may be formed of a compound semiconductor such as a group III-V or II-VI group. In the second conductivity type semiconductor layer 22c, The dopant can be doped. The second conductivity type semiconductor layer 22c may be a semiconductor material having a composition formula of InxAlyGa1-x-yN (0? X? 1, 0? Y? 1, 0? X + y? 1) or a semiconductor material having a composition formula of AlInN, AlGaAs, GaP, GaAs , GaAsP, and AlGaInP. When the second dopant is a p-type dopant such as Mg, Zn, Ca, Sr, or Ba, the second conductivity type semiconductor layer 22c doped with the second dopant may be a p-type semiconductor layer.

An electron blocking layer (not shown) may be disposed between the active layer 22b and the second conductivity type semiconductor layer 22c. The electron blocking layer interrupts the flow of electrons supplied from the first conductivity type semiconductor layer 22a to the second conductivity type semiconductor layer 22c and increases the probability of recombination of electrons and holes in the active layer 22b . The energy band gap of the electron blocking layer may be larger than the energy band gap of the active layer 22b and / or the second conductivity type semiconductor layer 22c. The electron blocking layer may be selected from a semiconductor material having a composition formula of InxAlyGa1-x-yN (0? X? 1, 0? Y? 1, 0? X + y? 1), for example, AlGaN, InGaN, InAlGaN, But is not limited thereto.

The semiconductor element 22 includes a recess formed in the direction of the first conductivity type semiconductor layer 22a from the second conductivity type semiconductor layer 22c. The recess penetrates through the second conductivity type semiconductor layer 22c and the active layer 22b and can penetrate to a partial region of the first conductivity type semiconductor layer 22a. The first electrode 23a electrically connected to the first conductivity type semiconductor layer 22a may be disposed on the first conductive type semiconductor layer 22a exposed by the recess. A second electrode 23b electrically connected to the second conductivity type semiconductor layer 22c may be disposed on the second conductivity type semiconductor layer 22c.

The first and second electrodes 23a and 23b may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGTO), zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, RuOx / ITO, Ni / IrOx / Au, ITO, and the like, and is not limited to these materials. In addition, the first and second electrodes 23a and 23b may be formed of a metal such as In, Co, Si, Ge, Au, Pd, Pt, Ru, Re, Mg, Zn, Hf, Ta, Rh, Ir, Cr, Mo, Nb, Al, Ni, Cu, and WTi.

The insulating layer 24 may be disposed to surround the supporting substrate 21, the first and second conductivity type semiconductor layers 22a and 22c, and the active layer 22b. As shown, the insulating layer 24 may surround the side surface of the semiconductor element 22, and the insulating layer 24 may be formed at any position. The insulating layer 24 may expose a part of the upper surface of the first electrode 23a and the second electrode 23b.

The first and second electrodes 23a and 23b are electrically connected to the first and second electrode pads 25a and 25b disposed on the first and second electrodes 23a and 23b through the exposed surfaces, Can be connected. The first and second electrode pads 25a and 25b may be electrically connected to the connection electrode 30 or the conductive member 11. The first power pad 12a and the second power pad 12b disposed on the connection electrode 30 of the substrate 10 can be electrically connected to the first power pad 12a and the second power pad 12b, respectively. The first power source pad 12a and the second power source pad 12b may be connected to an external power source via wires or may be electrically connected by an electrode pattern. And is not limited to this method.

In addition, the plurality of second semiconductor elements 20B may be arranged to connect the spaced connection electrodes 30 to each other. For example, the first electrode pad and the second electrode pad of the second semiconductor element 20B may be disposed on adjacent connection electrodes 30, respectively, and may be electrically connected to the connection electrodes.

Referring again to FIGS. 1 and 2, the connection electrodes 30 may be spaced apart on one side of the substrate 10. The connection electrodes 30 may form a predetermined gap. The connection electrode 30 may be made of a single material containing a metal such as Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, Ti, Alloy material. For example, the connection electrode 30 may include only Cu, but is not limited thereto.

The connection electrode 30 can electrically connect a plurality of semiconductor elements disposed on one surface of the substrate. The connection electrode 30 may be electrically connected to a plurality of semiconductor elements disposed on the other surface through the conductive member 11 and the through hole h. For example, the connection electrode 30 is electrically connected to the first and second electrode pads of the plurality of second semiconductor elements 20B disposed on the second surface S2 to electrically connect the second semiconductor elements 20B to each other electrically .

The first power source pad 12a and the second power source pad 12b may be disposed on the connection electrode 30 disposed at both ends of the substrate 10, respectively. The first power pad 12a and the second power pad 12b may be electrically connected to an external power source. Thus, the semiconductor device package according to the embodiment can be supplied with power.

The second bonding member 40 can bond the second semiconductor element 20B to the substrate 10 and the connecting electrode 30. [ The second bonding member 40 may comprise a non-conductive material. The second joining member 40 may include a thermosetting resin including a silicone resin, an epoxy resin, or a plastic material, or a material having high heat resistance and high light resistance, but is not limited thereto.

The second bonding member 40 may be, but is not limited to, a solder in the form of a bulk, a ball, a paste, or a tape. The second bonding member 40 is disposed between the second semiconductor element 20B and the substrate 10 on the connection electrode 30 and is then reflowed using heat and laser or the like, The semiconductor element 20B can be bonded to the substrate 10. [

Further, the second joining member 40 may have a melting point of 140 to 160 degrees. The second joining member 40 may have a melting point lower than that of the conductive member 11.

The second joining member 40 may include the second-first joining member 40a and the second-joining member 40b. The second-first bonding member 40a may be disposed between the substrate 10 and the second semiconductor element 20B. Thereby, the second-1 junction member 40a can bond the connection electrode 30 and the second semiconductor element 20B located between the substrate 10, the substrate 10 and the second semiconductor element 20B . Thereby, the reliability of the second semiconductor element 20B can be improved.

And the second-second bonding member 40b may be disposed between the adjacent second semiconductor elements 20B. Thus, the second-second bonding member 40b is disposed on the connecting electrode 30, and the second semiconductor element 20B and the adjacent second semiconductor element 20B or the connecting electrode 30 can be bonded.

The first bonding member 50 can bond the first semiconductor element 20A to the substrate 10 and the connecting electrode 30. [ The first bonding member 50 may comprise a non-conductive material. The first bonding member 50 may include a thermosetting resin including a silicone resin, an epoxy resin, or a plastic material, or a material having high heat resistance and high light resistance, but is not limited thereto.

The first bonding member 50 may be a solder in the form of a bulk, a ball, a paste, or a tape. However, the first bonding member 50 is not limited thereto. The first bonding member 50 is disposed between the first semiconductor element 20A and the substrate 10 on the connection electrode 30 and is then reflowed using heat and laser or the like to form a first So that the semiconductor element 20A can be coupled to the substrate 10.

In addition, the first joining member 50 may have a melting point of 140 to 160 degrees. The first bonding member 50 may have a melting point lower than that of the conductive member 11. Further, the first joining member 50 may have a lower melting point than the second joining member 40.

The first bonding member 50 may be disposed between the substrate 10 and the first semiconductor element 20A. Thereby, the first bonding member 50 can bond the substrate 10, the connecting electrode 30 located between the substrate 10 and the first semiconductor element 20A, and the first semiconductor element 20A. Thereby, the reliability of the first semiconductor element 20A can be improved.

In addition, the first-second bonding member 50b may be disposed between adjacent first semiconductor elements 20A. Thereby, the first-second bonding member 50b is disposed on the connecting electrode 30, and the first semiconductor element 20A and the adjacent first semiconductor element 20A or the connecting electrode 30 can be bonded.

The first joining member 50b may include a first concave r1 recessed on the first surface S1. Thereby, the reliability between adjacent first semiconductor elements 20A can be improved. In addition, the first-second joining member 50b may be concave on the first surface S1.

Likewise, the second joining member can be disposed in the plurality of second semiconductor elements 20B and can include the second concave r2. Thereby, the reliability between adjacent second semiconductor elements 20B can be improved.

Further, the first concave portion r1 and the second concave portion r2 may be arranged to overlap in the vertical direction.

The first phosphor layer 60 may be disposed on the first surface S1 of the substrate 10. [ The first phosphor layer 60 surrounds the first semiconductor element 20A and can convert light emitted from the first semiconductor element 20A into light of a desired color.

Likewise, the second phosphor layer 70 may be disposed on the second surface S2 of the substrate 10. The second phosphor layer 70 surrounds the second semiconductor element 20B and can convert light emitted from the second semiconductor element 20B into light of a desired color.

The first phosphor layer 60 and the second phosphor layer 70 may implement white light or monochromatic light. The phosphor layer may be selected from various materials capable of realizing a desired color.

The first phosphor layer 60 and the second phosphor layer 70 may be formed of a polymer resin in which the wavelength conversion particles are dispersed. At this time, the polymer resin may be at least one selected from a light-transmitting epoxy resin, a silicone resin, a polyimide resin, a urea resin, and an acrylic resin. As an example, the polymer resin may be a silicone resin.

The wavelength converting particles may include at least one of a phosphor and a quantum dot (QD). Hereinafter, the first wavelength conversion particle is described as a phosphor. The phosphor may include any one of a YAG-based, TAG-based, silicate-based, sulfide-based or nitride-based fluorescent material, but the embodiment is not limited to the type of the fluorescent material.

YAG and TAG-based fluorescent material (Y, Tb, Lu, Sc , La, Gd, Sm) 3 (Al, Ga, In, Si, Fe) 5 (O, S) 12: Ce may be selected from, Silicate The phosphor can be selected from (Sr, Ba, Ca, Mg) ₂ SiO ₄ : (Eu, F, Cl)

The sulfide-based fluorescent material can be selected from (Ca, Sr) S: Eu, (Sr, Ca, Ba) (Al, Ga) ₂ S ₄ : Eu, (O, N) ₁₆ (Ca _x , M _y ) (Si, Al) ₁₂ (O, N): Eu (e.g., CaAlSiN ₄ : Eu? -SiAlON: Eu) or Ca-? SiAlON: Eu. In this case, M may be selected from among the phosphor components satisfying 0.05 <(x + y) <0.3, 0.02 <x <0.27 and 0.03 <y <0.3, at least one of Eu, Tb, Yb or Er. The red phosphor may be a nitride-based phosphor including N (e.g., CaAlSiN ₃ : Eu) or a KSF (K ₂ SiF ₆ ) phosphor. For example, when the light emitted from the semiconductor element 10 is blue, the wavelength converting particles may include green, red phosphor, or may include a yellow phosphor.

The upper surface of the first phosphor layer 60 and the second phosphor layer 70 may have a semicircular shape having a curvature. However, the present invention is not limited thereto, and the first phosphor layer 60, the second phosphor layer 70 ) May be flat. Further, when the light emitted from the semiconductor element is blue, the first phosphor layer 60 and the second phosphor layer 70 may include a wavelength conversion member including a wavelength converting member including a green phosphor and a red phosphor. But is not limited thereto.

Referring to FIG. 4, the vertical thickness d1 of the second layer may be between 20 um and 60 um. If the thickness d1 of the second layer in the vertical direction is smaller than 20 mu m, the bonding force between the semiconductor element and the connection electrode 30 is low, which may cause reliability problems. If the thickness d1 in the vertical direction of the second layer is larger than 60 mu m, there is a limitation that the electrical resistance increases and the light flux decreases due to the decrease of the electric current.

The maximum thickness d2 from the first surface S1 of the substrate 10 of the first joining member 50 may be between 40 탆 and 50 탆.

The thickness d5 of the substrate 10 may be 0.3 mm to 2 mm. However, the thickness is not limited to this.

The thickness d4 of the connecting electrode 30 may be 1 um to 100 um. When the thickness (d4) of the connecting electrode 30 is less than 1 mu m, there is a limit that the connecting electrode is difficult to form and the electrical reliability is lowered. If the thickness (d4) of the connecting electrode 30 is larger than 100 mu m, there is a weak problem such as peeling.

In addition, the minimum thickness d3 of the second bonding member 40 from the substrate 10 may be 40 [mu] m to 50 [mu] m.

The horizontal width W1 of the through hole h may be in the range of 100 mu m to 350 mu m. When the horizontal width W1 of the through hole h is less than 100 mu m, the bonding force through the conductive member 11 disposed inside the through hole h is lowered and the horizontal width W1 of the through hole h ) Is larger than 350 mu m, there is a limit that the light flux is lowered due to the increase of the resistance.

5A and 5B are a bottom view and a top view of the semiconductor device package according to the embodiment, respectively.

Referring to FIGS. 5A and 4B, as described above, the connecting electrode 30 may be disposed on the second side of the substrate 10 at a distance. The second semiconductor element 20B may be disposed on the connection electrode 30 and may be electrically connected to the connection electrode 30. The connecting electrode 30 may electrically connect the first semiconductor element 20A disposed on the opposite surface to the second semiconductor element 20B disposed on the first surface through the through hole h. Thus, the semiconductor device package according to the embodiment can emit a plurality of semiconductor elements disposed on both sides of the substrate 10. [

That is, the conductive members disposed between the connection electrode 30 and the substrate 10 can be electrically connected to each other while supplying power to the semiconductor elements 20A and 20B disposed on both sides of the substrate through the through holes h. As described above, the second bonding member 40 is disposed on the side surface of the second semiconductor element 20B, and the second semiconductor element 20B and the connecting electrode 30 are bonded to each other, (20B), the connecting electrode (30), and the substrate (10). As a result, the reliability of the semiconductor device package according to the embodiment can be improved. This can be applied to the first bonding member (not shown) on the upper surface as well.

Likewise, the first semiconductor element 20A may be disposed on the substrate 10. The first semiconductor element 20A may be arranged to face the second semiconductor element 20B disposed on the lower surface with respect to the substrate 10. [ The first semiconductor element 20A and the second semiconductor element 20B may be arranged to overlap in the vertical direction. Thereby, the load applied to both surfaces of the substrate 10 is balanced, so that the structural stability of the semiconductor device package can be improved. In addition, the heat generated by the driving of the semiconductor element is constant on both sides of the substrate 10, and warping of the substrate 10 due to thermal expansion can be prevented.

6 is a flowchart of a method of manufacturing a semiconductor device package according to an embodiment.

Referring to FIG. 6A, a plurality of through holes h may be formed in the substrate 10. The through holes (h) may be spaced apart in the substrate (10).

The substrate 10 may include an epoxy resin as described above, but may include an acrylic resin, a silicone resin, and the like. The particles dispersed in the substrate 10 may be ceramics and at least one of the particles may include at least one selected from Al2O3, AlN, BN, Si3N4, SiC (SiC-BeO), BeO, CeO, With this structure, the substrate 10 can be improved in heat conductivity and heat radiation performance can be improved. For example, the substrate 10 can emit heat generated by driving the first semiconductor element 20A and the second semiconductor element 20B to the outside.

6B, a plurality of connection electrodes 30 may be disposed on the second surface of the substrate 10. [ At this time, the conductive member 11 can be injected toward the connection electrode 30 (direction A) in the through hole h. As a result, the conductive member 11 can be disposed between the connection electrode 30 and the conductive member 11. The first layer 11a of the conductive member 11 may be disposed between the connection electrode 30 and the substrate 10 as shown in FIG. As a result, the electrical connection area between the connecting electrodes 30 is increased, and the bonding force can be improved. After the conductive member 11 is injected, the connection electrode 30 and the conductive member 11 are reflowed at a temperature of 220 to 250 degrees using heat, laser, or the like, The member 40a can be electrically and structurally connected. The conductive member 11 can be reduced in volume due to reflow. For example, the conductive member 11 may form a difference hd of a predetermined thickness from the first surface of the substrate 10.

Referring to FIG. 6C, a plurality of second semiconductor elements 20B may be disposed on the connection electrode 30. FIG. The plurality of second semiconductor elements 20B may be arranged to connect the spaced connection electrodes 30 to each other. For example, the first electrode pad and the second electrode pad of the second semiconductor element 20B may be disposed on adjacent connection electrodes 30, respectively, and may be electrically connected to the connection electrodes. As described above, the second bonding member 40 can be reflowed using heat, laser, or the like to bond the substrate 10, the connecting electrode 30, and the second semiconductor element 20B. At this time, the reflow temperature may be lower than the reflow temperature (220 to 250 degrees) of the conductive material 11 mentioned in 6b from 140 to 160 degrees.

Referring to FIG. 6D, a plurality of first semiconductor elements 20A may be disposed on the first surface by injecting a conductive member into the through-holes h of the substrate 10. FIG.

As described above, the conductive member 11 can be electrically and structurally connected to the first semiconductor element 20A through the reflow process. The reflow may be performed at 220 to 250 degrees, but this may vary depending on the material. In addition, the conductive member 11 may include, for example, a curable material so that the shape formed in Fig. 6C may not be deformed.

Referring to FIG. 6E, a first bonding member 50 may be formed on the first side of the substrate 10. The first bonding member 50 can bond the first semiconductor element 20A and the substrate 10 which are spaced apart. The first bonding member 50 can be connected to the substrate 10 and the first semiconductor element 20A by being poured onto the substrate 10 with solder and reflowing using heat and laser. At this time, the reflow temperature may be lower than the reflow temperature when the second junction member 40 is formed. Further, as described above, the melting point of the first joining member 50 may be lower than the melting point of the second joining member 40.

Accordingly, at the time of reflow of the first joining member 50, the second joining member 40 may not be remyelinated. Thereby, the bonding force of the second bonding member 40 is maintained, and the structural reliability between the substrate 10, the connecting electrode 30 and the second semiconductor element 20B can be improved.

Referring to FIG. 6F, the first phosphor layer 60 and the second phosphor layer 70 can be formed. The first phosphor layer 60 and the second phosphor layer 70 may contain different materials or the same materials at different ratios so that the wavelengths of the converted lights in the respective layers are different.

7 is a cross-sectional view of a semiconductor device package according to another embodiment.

7, a semiconductor device package according to another embodiment includes a substrate 10, a conductive member 11, a connecting electrode 30, first and second semiconductor elements 20A and 20B, a second bonding member 40, a first bonding member 50, a first phosphor layer 60, and a second phosphor layer 70.

1, the first semiconductor element 20A and the second semiconductor element 20B are arranged so as to overlap each other in the vertical direction. In this case, the first semiconductor element 20A and the second semiconductor element 20B are arranged in a vertical direction May be arranged to overlap. A second semiconductor element 20B which overlaps the first semiconductor element 20A in the first semiconductor element 20A and a second semiconductor element 20B which is spaced apart from the first semiconductor element 20A and overlaps with the second semiconductor element 20B The electrical connection can be made through the conductive member 11 arranged in the through hole h in the order of one semiconductor element. Electrical connection can be made through the conductive member 11.

The first bonding member 50 is disposed on the first surface of the substrate 10 so that the first semiconductor element 20A and the substrate 10 can be bonded. Likewise, the second bonding member 40 may be disposed on the second surface of the substrate 10, and the second semiconductor element 20B and the substrate 10 may be bonded.

The connection electrode 30 may be disposed on one side of both ends of the substrate 10 and may be electrically connected to the first semiconductor element 20A or the second semiconductor element 20B. Thus, external power can be supplied to the semiconductor device.

Likewise, all the semiconductor elements arranged on both sides of the substrate 10 can emit light.

8 is a cross-sectional view of a semiconductor device package according to another embodiment,

The semiconductor device package according to still another embodiment may have the same lower structure as the lower structure of the semiconductor device package described above with reference to FIG.

Specifically, the connection electrodes 30 may be spaced apart from both sides of the substrate 10. The connection electrodes 30 disposed on both surfaces of the substrate 10 may be overlapped with each other in the vertical direction, but the present invention is not limited thereto.

Similarly, the first semiconductor element 20A and the second semiconductor element 20B may be disposed on the upper surface of the connection electrode 30, respectively. The first bonding member 50 is disposed on the connection electrode 30 and the first semiconductor element 20A and the connection electrode 30 are bonded to each other. The first bonding member 50 is disposed between the substrate 10 and the first semiconductor element 20A so that the connecting electrode 30, the first semiconductor element 20A, and the substrate 10 can be bonded.

The second joining member 40 may be disposed symmetrically to the first joining member 50 with respect to the substrate 10 under the substrate 10. And the second semiconductor element 20B may be disposed on the upper surface of the connection electrode 30, respectively. And a second bonding member 40 is disposed on the connection electrode 30 on the upper portion so that the second semiconductor element 20B and the connection electrode 30 can be bonded. The second bonding member 40 can be disposed between the substrate 10 and the second semiconductor element 20B to bond the connecting electrode 30, the second semiconductor element 20B, and the substrate 10 together.

The first phosphor layer 60 and the second phosphor layer 70 may be applied in the same manner as described above.

Also, the first power supply pads 12a 'and 12a' 'may be disposed on both sides of the substrate 10, respectively. Likewise, the second power supply pads 12b 'and 12b' 'may be disposed on both sides with respect to the substrate 10, respectively.

Accordingly, in the semiconductor device package according to another embodiment, a plurality of semiconductor elements disposed on each side of the substrate 10 are connected to each other, and the first semiconductor element 20A and the second semiconductor element 20B are driven . Thus, only the first semiconductor element 20A can be emitted, only the second semiconductor element 20B can emit light, or both the first semiconductor element 20A and the second semiconductor element 20B can emit light. With this control, the semiconductor device package according to another embodiment can provide light of different wavelengths in various directions.

9 is a conceptual diagram of a filament lamp according to an embodiment of the present invention.

The lamp according to the embodiment may include the light source 100, the socket unit 1, and the cap unit 2. [ The light source 100 may include a semiconductor device package. The structure of the semiconductor device package may include all of the above-described structures.

According to the embodiment, the substrate 10 of the package can be manufactured in various shapes, and the semiconductor device can be disposed on both sides of the substrate 10 to produce an effect similar to that of the filament light source.

A power supply line (not shown) is disposed inside the socket unit 1 to supply power to the semiconductor device package. The structure of the socket portion 1 may include all the structures of the socket portion of the general incandescent lamp.

The cap portion 2 allows the light emitted from the semiconductor device package located in the interior to be irradiated in all directions, so that a light distribution pattern identical or very similar to that of an incandescent lamp can be formed.

The semiconductor device may be used as a light source of an illumination system, or as a light source of an image display device or a lighting device. That is, semiconductor devices can be applied to various electronic devices arranged in a case to provide light. Illustratively, when a semiconductor device and an RGB phosphor are mixed and used, white light with excellent color rendering (CRI) can be realized.

The above-described semiconductor device is composed of a light emitting device package and can be used as a light source of an illumination system, for example, as a light source of a video display device or a lighting device.

When used as a backlight unit of a video display device, it can be used as an edge-type backlight unit or as a direct-type backlight unit. When used as a light source of a lighting device, it can be used as a regulator or bulb type. It is possible.

The light emitting element includes a laser diode in addition to the light emitting diode described above.

The laser diode may include the first conductivity type semiconductor layer, the active layer and the second conductivity type semiconductor layer having the above-described structure, like the light emitting element. Then, electro-luminescence (electroluminescence) phenomenon in which light is emitted when an electric current is applied after bonding the p-type first conductivity type semiconductor and the n-type second conductivity type semiconductor is used, And phase. That is, the laser diode can emit light having one specific wavelength (monochromatic beam) with the same phase and in the same direction by using a phenomenon called stimulated emission and a constructive interference phenomenon. It can be used for optical communication, medical equipment and semiconductor processing equipment.

As the light receiving element, a photodetector, which is a kind of transducer that detects light and converts the intensity of the light into an electric signal, is exemplified. As such a photodetector, a photodiode (e.g., a PD with a peak wavelength in a visible blind spectral region or a true blind spectral region), a photodiode (e.g., a photodiode such as a photodiode (silicon, selenium), a photoconductive element (cadmium sulfide, cadmium selenide) , Photomultiplier tube, phototube (vacuum, gas-filled), IR (Infra-Red) detector, and the like.

In addition, a semiconductor device such as a photodetector may be fabricated using a direct bandgap semiconductor, which is generally excellent in photo-conversion efficiency. Alternatively, the photodetector has a variety of structures, and the most general structure includes a pinned photodetector using a pn junction, a Schottky photodetector using a Schottky junction, and a metal-semiconductor metal (MSM) photodetector have.

The photodiode, like the light emitting device, may include the first conductivity type semiconductor layer having the structure described above, the active layer, and the second conductivity type semiconductor layer, and may have a pn junction or a pin structure. The photodiode operates by applying reverse bias or zero bias. When light is incident on the photodiode, electrons and holes are generated and a current flows. At this time, the magnitude of the current may be approximately proportional to the intensity of the light incident on the photodiode.

A photovoltaic cell or a solar cell is a type of photodiode that can convert light into current. The solar cell, like the light emitting device, may include the first conductivity type semiconductor layer, the active layer and the second conductivity type semiconductor layer having the above-described structure.

In addition, it can be used as a rectifier of an electronic circuit through a rectifying characteristic of a general diode using a p-n junction, and can be applied to an oscillation circuit or the like by being applied to a microwave circuit.

In addition, the above-described semiconductor element is not necessarily implemented as a semiconductor, and may further include a metal material as the case may be. For example, a semiconductor device such as a light receiving element may be implemented using at least one of Ag, Al, Au, In, Ga, N, Zn, Se, P, or As, Or may be implemented using a doped semiconductor material or an intrinsic semiconductor material.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be understood that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

Claims (13)

A substrate including a first surface and a second surface facing each other, and a plurality of through holes passing through the first surface and the second surface;
A plurality of first semiconductor elements disposed on a first side of the substrate;
A plurality of second semiconductor elements disposed on a second surface of the substrate; And
And a conductive member disposed in the through hole,
And the conductive member electrically connects the plurality of first semiconductor elements and the plurality of second semiconductor elements.
The method according to claim 1,
A first junction member which surrounds the substrate and the plurality of first semiconductor elements, respectively; And
And a second bonding member which surrounds the substrate and the plurality of second semiconductor elements, respectively.
3. The method of claim 2,
Wherein the first junction member is disposed between the plurality of first semiconductor elements,
And the second junction member is disposed between the plurality of second semiconductor elements.
The method of claim 3,
Wherein the first bonding member disposed between the plurality of first semiconductor elements includes a first concave portion concave on the first surface,
And a second bonding member disposed between the plurality of second semiconductor elements includes a second concave portion concave on the second surface.
5. The method of claim 4,
Wherein the first recess and the second recess are vertically overlapped.
The method according to claim 1,
The plurality of first and second semiconductor elements may include a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer. A first electrode electrically connected to the first conductive semiconductor layer, and a second electrode electrically connected to the second conductive semiconductor layer.
The method according to claim 1,
And a connection electrode disposed on the second surface, the connection electrode electrically connecting the plurality of second semiconductor elements.
The method according to claim 1,
And the plurality of second semiconductor elements disposed on the second surface are connected in series.
The method according to claim 1,
And a plurality of semiconductor elements disposed on the first surface are electrically connected to a plurality of semiconductor elements disposed on the second surface, respectively.
The method according to claim 1,
Wherein a first electrode of the semiconductor device disposed on the first surface is electrically connected to a second electrode of the semiconductor device disposed on the second surface.
The method according to claim 1,
Wherein a first electrode and a second electrode of the first semiconductor element are vertically overlapped with the through hole, respectively.
The method according to claim 1,
And the first and second electrodes of the second semiconductor element are vertically overlapped with the through holes.
3. The method of claim 2,
Wherein the first bonding member and the second bonding member are lower in melting point than the conductive member.

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