KR20190040036A - 반도체 물질의 층을 어닐링하기 위한 장치, 반도체 물질의 층을 어닐링하는 방법, 및 플랫 패널 디스플레이 - Google Patents

반도체 물질의 층을 어닐링하기 위한 장치, 반도체 물질의 층을 어닐링하는 방법, 및 플랫 패널 디스플레이 Download PDF

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KR20190040036A
KR20190040036A KR1020197007934A KR20197007934A KR20190040036A KR 20190040036 A KR20190040036 A KR 20190040036A KR 1020197007934 A KR1020197007934 A KR 1020197007934A KR 20197007934 A KR20197007934 A KR 20197007934A KR 20190040036 A KR20190040036 A KR 20190040036A
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semiconductor material
sub
beams
layer
regions
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필립 토마스 럼스비
데이비드 토마스 에드먼드 마일스
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엠-솔브 리미티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H01L21/67098—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/067—Dividing the beam into multiple beams, e.g. multi-focusing
    • B23K26/0676—Dividing the beam into multiple beams, e.g. multi-focusing into dependently operating sub-beams, e.g. an array of spots with fixed spatial relationship or for performing simultaneously identical operations
    • H01L21/02532—
    • H01L21/02565—
    • H01L21/02686—
    • H01L21/02691—
    • H01L21/324—
    • H01L29/786—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3434—Deposited materials, e.g. layers characterised by the chemical composition being oxide semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3816—Pulsed laser beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/382—Scanning of a beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
KR1020197007934A 2016-08-22 2017-08-16 반도체 물질의 층을 어닐링하기 위한 장치, 반도체 물질의 층을 어닐링하는 방법, 및 플랫 패널 디스플레이 Withdrawn KR20190040036A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
GB1614342.2 2016-08-22
GBGB1614342.2A GB201614342D0 (en) 2016-08-22 2016-08-22 An apparatus for annealing a layer of amorphous silicon, a method of annealing a layer of amorphous silicon, and a flat panel display
GB1700800.4A GB2553162B (en) 2016-08-22 2017-01-17 An apparatus for annealing a layer of amorphous silicon, a method of annealing a layer of amorphous silicon, and a flat panel display
GB1700800.4 2017-01-17
PCT/GB2017/052423 WO2018037211A1 (en) 2016-08-22 2017-08-16 An apparatus for annealing a layer of semiconductor material, a method of annealing a layer of semiconductor material, and a flat panel display

Publications (1)

Publication Number Publication Date
KR20190040036A true KR20190040036A (ko) 2019-04-16

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KR1020197007934A Withdrawn KR20190040036A (ko) 2016-08-22 2017-08-16 반도체 물질의 층을 어닐링하기 위한 장치, 반도체 물질의 층을 어닐링하는 방법, 및 플랫 패널 디스플레이

Country Status (8)

Country Link
US (1) US20190181009A1 (OSRAM)
EP (1) EP3501034A1 (OSRAM)
JP (1) JP2019532494A (OSRAM)
KR (1) KR20190040036A (OSRAM)
CN (1) CN109643644A (OSRAM)
GB (2) GB201614342D0 (OSRAM)
TW (1) TWI765905B (OSRAM)
WO (1) WO2018037211A1 (OSRAM)

Families Citing this family (3)

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Publication number Priority date Publication date Assignee Title
US11384425B2 (en) * 2017-07-13 2022-07-12 Purdue Research Foundation Method of enhancing electrical conduction in gallium-doped zinc oxide films and films made therefrom
KR102748414B1 (ko) * 2017-07-26 2024-12-30 엔제루 구루푸 가부시키가이샤 유기용 대용 화폐, 유기용 대용 화폐의 제조 방법, 및 검사 시스템
CN116635978A (zh) 2021-10-30 2023-08-22 长江存储科技有限责任公司 用于半导体器件中的半导体层的热处理的方法

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JP3477969B2 (ja) * 1996-01-12 2003-12-10 セイコーエプソン株式会社 アクティブマトリクス基板の製造方法及び液晶表示装置
JP2000111950A (ja) * 1998-10-06 2000-04-21 Toshiba Corp 多結晶シリコンの製造方法
US6451631B1 (en) * 2000-08-10 2002-09-17 Hitachi America, Ltd. Thin film crystal growth by laser annealing
JP3903761B2 (ja) * 2001-10-10 2007-04-11 株式会社日立製作所 レ−ザアニ−ル方法およびレ−ザアニ−ル装置
KR20040088536A (ko) * 2002-02-25 2004-10-16 오르보테크 엘티디. 편평한 패널 디스플레이 기판을 제조하기 위한 방법
JP2005191173A (ja) * 2003-12-25 2005-07-14 Hitachi Ltd 表示装置及びその製造方法
JP4838982B2 (ja) * 2004-01-30 2011-12-14 株式会社 日立ディスプレイズ レーザアニール方法およびレーザアニール装置
US7199397B2 (en) * 2004-05-05 2007-04-03 Au Optronics Corporation AMOLED circuit layout
JP2006135192A (ja) * 2004-11-08 2006-05-25 Sharp Corp 半導体デバイスの製造方法と製造装置
JP2007214527A (ja) * 2006-01-13 2007-08-23 Ihi Corp レーザアニール方法およびレーザアニール装置
JP5030524B2 (ja) * 2006-10-05 2012-09-19 株式会社半導体エネルギー研究所 レーザアニール方法及びレーザアニール装置
DE102008045533B4 (de) * 2008-09-03 2016-03-03 Innovavent Gmbh Verfahren und Vorrichtung zum Ändern der Struktur einer Halbleiterschicht
US7964453B2 (en) * 2009-05-15 2011-06-21 Potomac Photonics, Inc. Method and system for spatially selective crystallization of amorphous silicon
JP5471046B2 (ja) * 2009-06-03 2014-04-16 株式会社ブイ・テクノロジー レーザアニール方法及びレーザアニール装置
WO2013172965A1 (en) * 2012-05-14 2013-11-21 The Trustees Of Columbia University In The City Of New York Advanced excimer laser annealing for thin films
JP5918118B2 (ja) * 2012-12-18 2016-05-18 株式会社日本製鋼所 結晶半導体膜の製造方法
KR101989560B1 (ko) * 2012-12-31 2019-06-14 엔라이트 인크. Ltps 크리스탈화를 위한 짧은 펄스 섬유 레이저
WO2014136237A1 (ja) * 2013-03-07 2014-09-12 三菱電機株式会社 レーザアニール装置、半導体装置の製造方法
WO2015127031A1 (en) * 2014-02-19 2015-08-27 The Trustees Of Columbia University In The City Of New York Sequential laser firing for thin film processing

Also Published As

Publication number Publication date
TWI765905B (zh) 2022-06-01
GB2553162A (en) 2018-02-28
WO2018037211A1 (en) 2018-03-01
TW201812919A (zh) 2018-04-01
JP2019532494A (ja) 2019-11-07
GB201700800D0 (en) 2017-03-01
CN109643644A (zh) 2019-04-16
GB201614342D0 (en) 2016-10-05
GB2553162B (en) 2020-09-16
EP3501034A1 (en) 2019-06-26
US20190181009A1 (en) 2019-06-13

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