KR20190036450A - Position detection device, position detection method, and vapor deposition apparatus - Google Patents

Abstract

The present invention relates to a position detection apparatus, position detection method, and deposition apparatus, which are capable of improving the precision in detecting the position of a substrate. According to the present invention, an image processing unit (20) calculates the relative positions of a camera (11) of a surface filming unit from a result of each of the cameras (11) filming a substrate mark (Wm) of the surface filming unit. The relative position of the relevant cameras (11) and a result of each of the cameras (11) of the surface filming unit filming a processed substrate (W) are used to calculate the position of the processed substrate (W) by a surface filming. The relative position of each of the cameras (12) of the rear filming unit is calculated from a result of each of the cameras (12) of the rear surface filming unit filming a penetration image of the substrate mark (W). The position of the processed substrate (W) by a rear surface filming is calculated by using the relative position of each of the cameras (12) and a result of each of the cameras (12) of the rear surface filming unit filming the processed substrate (W).

Description

TECHNICAL FIELD [0001] The present invention relates to a position detection apparatus, a position detection method,

The present invention relates to a position detecting device for detecting the position of a substrate, a position detecting method, and a deposition apparatus provided with the position detecting device.

In the vapor deposition apparatus, a deposition mask is disposed between a deposition surface of a substrate and an evaporation source, and a pattern of a shape following the opening of the deposition mask is formed on the deposition surface of the substrate. The deposition apparatus calculates the position of the substrate from the substrate mark, which is an alignment mark of the substrate. The deposition apparatus adjusts the position of the substrate and the position of the deposition mask so that the position of the calculated substrate matches the position of the deposition mask (see, for example, Patent Document 1).

Patent Document 1: JP-A-2013-1947

Incidentally, the substrate mark described above is usually located on the deposition surface of the substrate, and the detection section for detecting the substrate mark is located on the same side as the evaporation source with respect to the deposition surface. The space on the evaporation source side with respect to the deposition surface is a space where the evaporation material sublimated in the evaporation source flows, and the evaporation material accumulates in the optical system of the detection part located in this space. Since it is impossible to precisely detect the substrate mark in the detection unit in which the deposition material is deposited on the optical system, the above-described deposition apparatus is required to have a technique for improving the alignment accuracy of the substrate and the deposition mask. Further, the request for precisely detecting the position of the substrate is not limited to a vapor deposition apparatus for aligning the substrate with the deposition mask, but is common to the apparatus for detecting the position of the substrate.

An object of the present invention is to provide a position detecting device, a position detecting method, and a deposition apparatus which can improve the detection accuracy of the position of a substrate.

One embodiment is a position detecting device for detecting the position of a process substrate which is an impermeable substrate. The position detecting device uses a substrate for calibration, which is a light transmitting substrate. The surface of the substrate for calibration has a plurality of substrate marks. The position detection device includes a back surface photographing unit including a plurality of cameras each corresponding to one of the plurality of substrate marks and a plurality of cameras respectively corresponding to one of the plurality of substrate marks. The position detecting apparatus further includes an image processing section. Wherein the image processing section calculates a relative position between the camera of the surface photographing section and the camera relative position between the camera and the surface photographing section, And the position of the processed substrate by surface photographing is calculated by using a result of photographing the processing substrate by a plurality of sub-cameras. It is preferable that the image processing section calculates the relative position between the cameras of the back side photographing section from the result of photographing the transmitted images of the plurality of substrate marks of the calibration substrate by the plurality of cameras of the back side photographing section, And the position of the processed substrate by the backside photographing is calculated by using a result of photographing the processed substrate by a plurality of cameras of the back side photographing unit.

Another aspect is a position detection method for detecting a position of a process substrate which is an impermeable substrate. This position detection method uses a calibration substrate, which is a light-transmissive substrate having a plurality of substrate marks on a surface thereof, in a surface photographing unit including a plurality of cameras respectively corresponding to one of the plurality of substrate marks, And taking a mark on the surface side of the calibration substrate. The position detection method may further include photographing the plurality of substrate marks on the back surface of the calibration substrate in a back surface photographing unit including a plurality of cameras respectively corresponding to one of the plurality of substrate marks. The position detection method includes calculating, by an image processing unit, a relative position between the camera of the surface photographing unit and a camera from a result of photographing a plurality of substrate marks of the calibration substrate by a plurality of cameras of the surface photographing unit. The position detection method may further include a step of detecting a position of the processed substrate by surface photographing using the relative position between the cameras of the surface photographing unit and a result of photographing the process substrate by a plurality of cameras of the surface photographing unit, . The position detection method may further include calculating, by the image processing unit, a relative position between the camera of the back side photographing unit and the camera from the result of photographing the transmitted images of the plurality of substrate marks of the calibration substrate by the plurality of cameras of the back side photographing unit . The position detection method may further include a step of detecting the position of the processed substrate by the back side photographing from the image processing unit using the relative position between the cameras of the back side photographing unit and the result of photographing the processed substrate by a plurality of cameras of the back side photographing unit .

Another embodiment is a deposition apparatus. The deposition apparatus includes a deposition chamber for performing deposition on a surface of a process substrate which is a non-transparent substrate, and a position detection device for detecting the position of the process substrate. The surface of the calibration substrate, which is a light-transmitting substrate, has a plurality of substrate marks. The position detection device includes a surface photographing unit including a plurality of cameras respectively associated with one of the plurality of substrate marks, and a back side photographing unit including a plurality of cameras respectively associated with one of the plurality of substrate marks do. The vapor deposition apparatus further includes an image processing section. Wherein the image processing section calculates a relative position between the camera of the surface photographing section and the camera relative position between the camera and the surface photographing section, And the position of the processed substrate by surface photographing is calculated by using a result of photographing the processing substrate by a plurality of sub-cameras. It is preferable that the image processing section calculates the relative position between the cameras of the back side photographing section from the result of photographing the transmitted images of the plurality of substrate marks of the calibration substrate by the plurality of cameras of the back side photographing section, And the position of the processed substrate by the backside photographing is calculated by using a result of the plurality of cameras of the back side photographing unit photographing the processed substrate.

According to each of the above configurations, a plurality of cameras of the surface photographing section and a plurality of cameras of the back face photographing section photograph a plurality of substrate marks common to the surface photographing section and the back face photographing section. The image processing section calculates the relative position between the camera of the surface photographing section and the camera relative position between the camera of the back face photographing section from the result of photographing a plurality of common substrate marks on the front and back sides. Then, the image processing section calculates the position of the processed substrate by surface photographing, using the result of photographing the processed substrate of the surface photographing section and the relative position between the camera of the surface photographing section. Further, the image processing section calculates the position of the processed substrate by the back side photographing using the relative position between the result of photographing the processed substrate on the back side photographing section and the camera on the back side photographing section. This makes it possible to increase the detection accuracy of the position of the processed substrate by the back side photographing unit to the detection accuracy of the position of the processed substrate by the surface photographing unit, that is, to the same degree as the detection accuracy by photographing the substrate mark. As a result, it is possible to improve the detection accuracy of the position of the substrate to such an extent that only the photographing result on the back side can be obtained, for example, even in an environment in which the above-described vapor deposition process is performed, do.

The object to be photographed by the plurality of cameras of the surface photographing unit with respect to the process substrate includes a plurality of substrate marks located on the surface of the process substrate and a plurality of Wherein the object to be photographed by the camera includes a flat portion positioned on the back surface of the processing substrate and a boundary between the flat portion and a bevel portion following the flat portion and the image processing portion includes a flat portion captured by a plurality of cameras of the back surface shooting portion, And the extracted boundary may be used as a result of the plurality of cameras of the back side photographing section photographing the processed substrate.

The bevel portion defining the outline of the substrate is generally a curved surface having a predetermined curvature in the thickness direction of the substrate. In the image photographed with the beveled portion, for example, the brightness gradually decreases toward the outline of the substrate, and the blur amount also gradually increases. In the technique of detecting the outline of the substrate from the image of the bevel portion, a large error is included in the position of the outline due to the increase in blur amount and the like. On the other hand, the boundary between the bevel portion and the flat portion is a boundary in which the plane direction is largely changed in the substrate. For example, in the photographing in the direction opposite to the flat portion, the boundary is also clearly detected. In the case of the position detecting apparatus, the image processing section extracts the boundary between the flat portion and the bevel portion based on the contrast, and obtains the position of the processing substrate from the extracted boundary. Therefore, when calculating the position of the processing substrate from the result of the back-side imaging, the accuracy can be further improved.

In the above position detecting method, each camera of the back side photographing section is provided with a telecentric optical system, and photographs the processed substrate outside the frame housing the processed substrate, And an anti-reflection film covering the periphery of the reflection film.

A camera having a telecentric optical system located outside the frame makes the distance between the calibration substrate and the objective lens, that is, the working distance of the camera, larger than a camera or the like usually located inside the frame. As a result, in the configuration provided with such a camera as the back side imaging unit, light other than light from the objective surface is likely to enter the objective lens. In this regard, in the above-described configuration, the anti-reflection film covering the periphery of each substrate mark of light reflectivity suppresses reflection on the object surface. Therefore, it is possible to clearly capture each substrate mark even with a camera having a large working distance.

In the position detecting method, the thermal expansion coefficient of the substrate for calibration may be 3 ppm / ° C or less. When a process including heating such as a vapor deposition process or a plasma process is performed on a process substrate, an environment in which heating is performed, that is, an environment in which processing of the process substrate is performed is higher than room temperature It is maintained at a high temperature. At this time, if the thermal expansion coefficient of the calibration substrate is 3 ppm / DEG C or less, the thermal expansion caused in the calibration substrate can be suppressed to a sufficiently small range, and consequently, the detection error due to the thermal expansion of the calibration substrate can be reduced.

Wherein said front substrate and said front substrate are arranged in the deposition chamber so as to face each other in a direction perpendicular to a direction in which said target substrate is brought into said deposition chamber, Wherein the target substrate is a selected one of the processing substrate and the calibration substrate, one of the back side imaging units is mounted on the front side module together with the front side imaging unit, and the other back side imaging unit is mounted on the front side imaging unit, A portion may be mounted in the deposition chamber.

According to the above arrangement, the position of the processed substrate in the front end module and the position of the processed substrate in the deposition chamber can be matched based on the result of the back side imaging. Therefore, it is possible to improve the detection accuracy of the position of the processed substrate in the deposition chamber to the same level as the detection accuracy using the front surface module as a result of the surface photographing.

1 is a block diagram showing a configuration of an EFEM.
Fig. 2 is a plan view showing an image pickup area of each camera. Fig. 2 (a) shows an image pickup area of the mark camera, and Fig. 2 (b) shows an image pickup area of the road camera.
3 is a flowchart showing a flow of a calibration process performed by the image processing section.
Fig. 4 is a configuration diagram showing the configuration of the EFEM together with the substrate. Fig. 4 (a) shows the structure together with the plan view of the substrate, and Fig. 4 (b) shows the relative position between the sectional view of the substrate and the photographing area of the camera.
5 is a view showing an example of an image taken by a load camera;
6 is a configuration diagram showing a configuration of a deposition apparatus;
7 is a block diagram showing a configuration of a deposition chamber;
8 is a plan view of the substrate along with the imaging area of the deposition camera;
9 is a flowchart showing the flow of a calibration process performed by the control device.
10 is a block diagram for explaining various processes performed by a deposition apparatus;

An embodiment of a position detecting device, a position detecting method, and a deposition apparatus will be described.

[EFEM]

1 and 2, the configuration of an equipment front end module (EFEM) 10, which is an example of a front end module, will be described. Hereinafter, the configuration of the surface photographing section and the back side photographing section will be mainly described in the construction of the EFEM 10. [

As shown in Fig. 1, the EFEM 10 includes a stage 10S, a plurality of mark cameras 11 constituting a surface photographing section, and a plurality of road cameras 12 constituting a back face photographing section. A plurality of load cameras 12 are located outside the frame 13, which houses, for example, a substrate. Hereinafter, an example in which the EFEM 10 includes three mark cameras 11 and three load cameras 12 will be described.

The stage 10S supports the unprocessed substrates received in the stocker one by one. The substrate supported by the stage 10S includes a non-transparent processing substrate W and a light-transmitting calibration substrate W0. The processed substrate W is, for example, a glass substrate covered with a light reflective thin film or a silicon substrate having a non-transmissive substrate itself. The calibration substrate W0 is, for example, a quartz substrate or an alumina oxide substrate. The processing substrate W and the calibration substrate W0 each include a surface WF and a backside WR. The coefficient of thermal expansion possessed by the calibration substrate W0 is preferably 3 ppm / DEG C or less from the viewpoint of suppressing thermal expansion under high temperature. In the following description, the target substrate or simply the substrate (or the substrate W, W0) is referred to as a target substrate or a substrate (W) if the processing substrate W and the calibration substrate W0 are not distinguished.

The EFEM 10 places the target substrate on the surface WF upward. The surface WF has three substrate marks Wm. The substrate mark Wm is, for example, a pattern of a thin film having a high light reflectivity in a surface WF or a thin film having a high light absorbing property in a surface WF. The substrate mark Wm has, for example, a rectangular shape or a cross shape when viewed from a plane facing the surface WF. The substrate mark Wm of the process substrate W is used to align the opening of the deposition mask with the specific position of the surface WF. The substrate mark Wm of the calibration substrate W0 is used to calculate the relative position between the three mark cameras 11. [ The substrate mark Wm of the calibration substrate W0 is used to calculate the relative position between the three load cameras 12. [

Each mark camera 11 is, for example, a CCD camera, and corresponds to each substrate mark Wm one by one. Each mark camera 11 is located above (on the table side) the substrates W and W0 supported by the stage 10S. The position of the optical axis 1A of each mark camera 11 is fixed with respect to the position of the optical axis 1A of the other mark camera 11. [ Each mark camera 11 faces the surface WF of the substrates W and W0 and picks up each surface of the substrate mark Wm.

The image taken by each mark camera 11 is the surface image IM1. The image processing section 20 uses the surface image IM1 of the calibration substrate W0 for calibration processing. Further, the image processing section 20 uses the surface image IM1 of the process substrate W for specifying the surface position.

Each load camera 12 is, for example, a CCD camera, and corresponds to each substrate mark Wm one by one. Each of the load cameras 12 is located below (on the side opposite) the substrates W and W0 supported by the stage 10S. The position of the optical axis 2A of each load camera 12 is fixed to the position of the optical axis 2A of the other load camera 12. [ Each of the load cameras 12 faces the back surface WR of the substrates W and W0, and photographs (photographs each part) of the respective parts.

The image photographed by each load camera 12 is the first back side image IM2. The first back side image IM2 of the calibration substrate W0 includes a transmission image which is an image of the substrate mark Wm through the calibration substrate W0. The image processing section 20 uses the first back side image IM2 of the calibration substrate W0 for the calibration process. The first back side image IM2 of the processing substrate W includes the outer peripheral portion Wp of the processing substrate W. [ The image processing unit 20 uses the first back side image IM2 of the processed substrate W for the back side position specification processing.

An area photographed by the mark camera 11 will be described with reference to Fig. 2 (a), and an area photographed by the road camera 12 will be described with reference to Fig. 2 (b). 2A and 2B show the planar structure of the substrate viewed from the plane opposite to the surface WF of each of the substrates W and W0 and the regions photographed by the cameras 11 and 12. 2 (a) and 2 (b), since the substrate W and the calibration substrate W0 share a common shape, size, and alignment of substrate marks, W0 shown in the drawing and an area photographed by each mark camera 11 and an area photographed by each load camera 12 are superimposed on the calibration substrate W0.

As shown in Fig. 2A, the robot that loads the calibration substrate W0 on the stage 10S has a hypothetical arrangement area WA (large circle of the dashed line in Fig. 2 (a)) I decide. The placement area WA is a target area on which the substrate W0 for calibration is to be arranged. The robot mounting the calibration substrate W0 on the stage 10S is moved to the alignment substrate WA so that the alignment area WA and the outline E of the calibration substrate W0 (solid lines in Fig. 2 (a) W0).

The surface WF of the substrate W0 for calibration has three substrate marks Wm. The three substrate marks Wm are arranged in the circumferential direction of the calibration substrate W0 and located on the center side of the substrate with respect to the outer peripheral portion Wp of the calibration substrate W0. The surface WF of the processed substrate W also has three substrate marks Wm.

Each mark camera 11 defines an area in which an image is taken as an imaging area 1Z (a small circle of a dashed line in Fig. 2 (a)). Each photographing area 1Z is almost evenly distributed in the circumferential direction of the arrangement area WA. The optical axis 1A of the mark camera 11 is located at the center of the photographing area 1Z. Each photographing area 1Z contains one substrate mark Wm. In carrying the substrates W and W0, the difference between the position after the transfer and the target position is the transfer accuracy, and the transfer accuracy of the substrates W and W0 is set within a predetermined range. The photographing area 1Z of the mark camera 11 is sufficiently larger than the range of such conveyance accuracy.

Each of the load cameras 12 defines an area for photographing the image as the photographing area 2Z (the wish of the double-dotted line in Fig. 2 (b)). Each photographing area 2Z is almost evenly distributed in the circumferential direction of the arrangement area WA. The optical axis 2A of the load camera 12 is located at the center of the photographing area 2Z. Each photographing region 2Z includes a transmission image of each substrate mark Wm (a rectangle of broken lines in Fig. 2 (b)) one by one. Each photographing region 2Z includes the boundary between the flat portion Wp1 and the bevel portion Wp2 in the outer peripheral portion Wp.

As described above, the position detecting apparatus is mounted on the EFEM 10, and the position detecting apparatus includes a plurality of mark cameras 11 for correcting the surface photographing section, a plurality of load cameras 12 for correcting the back face photographing section, 20).

[Calibration process: EFEM (10)]

The image processing section 20 is not limited to being provided with a central processing unit and a memory and performing processing such as calibration processing, surface position specifying processing, and back side position specifying processing all by software. For example, the image processing section 20 may be provided with dedicated hardware (an application specific integrated circuit (ASIC)) for executing at least a part of various processes. That is, the image processing section 20 may be constituted as a circuit including 1) one or more dedicated hardware circuits such as an ASIC, 2) one or more processors (microcomputers) operating in accordance with a computer program do. The image processing section 20 stores the positions of the three substrate marks Wm as relative coordinates which are the coordinates of the relative coordinate system.

As shown in Fig. 3, in the calibration process, the image processing section 20 performs image analysis on the surface image IM1 of the calibration substrate W0 (step S11). That is, the image processing section 20 performs edge detection or the like for detecting the substrate mark Wm on the surface image IM1 and detects the substrate mark Wm. Further, the image processing section 20 takes the position of the optical axis 1A in the camera coordinate system as the center of the surface image IM1, for example.

Subsequently, the image processing section 20 performs image analysis on the first back side image IM2 of the calibration substrate W0 (step S12). That is, the image processing section 20 performs edge detection or the like on the first back side image IM2 and calculates the relative position of the substrate mark Wm with respect to the optical axis 2A in the camera coordinate system of the load camera 12 do. Further, the image processing section 20 sets the position of the optical axis 2A in the camera coordinate system as the center of the first back side image IM2, for example.

The image processing section 20 then calculates the position of the mark camera 11 in the relative coordinate system using the position of the substrate mark Wm in the camera coordinate system of the mark camera 11 and the relative coordinates of the substrate mark Wm, Is calculated. The image processing section 20 also uses the position of the substrate mark Wm in the camera coordinate system of the load camera 12 and the relative coordinates of the substrate mark Wm to set the optical axis position of the load camera 12 to the relative (Step S13). That is, the image processing section 20 calculates the relative positions of the three mark cameras 11 between the optical axes 1A and the relative positions of the three road cameras 12 between the optical axes 2A. The image processing unit 20 stores an optical axis position of each mark camera 11 and an optical axis position of each rod camera 12 as an example of a relative position between cameras. The image processing section 20 updates the optical axis position of each mark camera 11 and the optical axis position of each rod camera 12 every time the calibration processing is performed.

In this manner, the relative position between the camera in the surface photographing unit and the relative position between the camera in the back face photographing unit are calculated by photographing the substrate mark Wm in common. The relative position between the cameras in the surface photographing unit and the relative position between the cameras in the back face photographing unit are also obtained in the following manner. That is, each mark camera 11 photographs the substrate mark Wm of the first calibration substrate, each rod camera 12 photographs the substrate mark Wm of the second calibration substrate, It is also possible to calculate a special relative position. However, in the case of photographing a specific calibration substrate, errors in the position of the substrate mark Wm between the calibration substrates and a conveying error between the calibration substrates are specifically included in the imaging results of the front and back sides. In this regard, if the common substrate mark Wm is photographed at the front and the back, the relative position between the camera at the surface photographing unit and the relative position between the camera at the back face photographing unit is suppressed from being included.

[Specific treatment of surface position: EFEM (10)]

The image processing section 20 calculates the position of the center of the pattern using each surface image IM1 of the process substrate W in the process of specifying the surface position. That is, the image processing section 20 performs edge detection or the like on each surface image IM1, and calculates the position of the substrate mark Wm in the camera coordinate system of the mark camera 11. [ Subsequently, the image processing section 20 calculates the relative position between the optical axis position of each mark camera 11 and the substrate mark Wm from the position of the substrate mark Wm in the camera coordinate system. Then, the image processing section 20 calculates the position of the center of the pattern in the relative coordinate system so that an imaginary circle centered on the pattern center passes through the relative position of each substrate mark Wm.

[Specific processing of back side position: EFEM (10)]

Next, the back surface position specifying process using the processed substrate W will be described. 4A is a plan view of the processing substrate W viewed from the direction opposite to the back surface WR and Fig. 4B is a plan view showing the boundary between the flat portion Wp1 and the bevel portion Wp2, Fig. 4A and 4B, only one of the three load cameras 12 is shown for convenience in explaining the boundary between the flat portion Wp1 and the bevel portion Wp2.

As shown in Fig. 4, the outer peripheral portion Wp of the processing substrate W has a flat portion Wp1 and a bevel portion Wp2. The flat portion Wp1 is a planar portion that extends along the surface WF of the processing substrate W and a planar portion that extends along the back surface WR of the processing substrate W. Each bevel portion Wp2 is located on the center side of the process substrate W with respect to the bevel portion Wp2 in a cross section along the thickness direction of the process substrate W And has a curvature.

The photographing area 2Z of the load camera 12 includes a part of the flat part Wp1 and a bevel part Wp2 connected to a part of the flat part Wp1. The optical axis 2A of the load camera 12 is located near the boundary between the flat portion Wp1 and the bevel portion Wp2, for example. The light irradiated to the outer peripheral portion Wp may be parallel light traveling along the optical axis 2A of the rod camera 12 from the rod camera 12 side (back side) with respect to the process substrate W, 12 may be parallel light traveling in a direction different from the optical axis 2A. When the rod camera 12 is provided with a telecentric optical system in which the optical axis of the light irradiated to the outer peripheral portion Wp coincides with the optical axis 2A of the rod camera 12, Light is irradiated to the outer peripheral portion Wp by using a trick optical system. When the optical axis of the light irradiated to the outer peripheral portion Wp of the processing substrate W differs from the optical axis 2A of the rod camera 12, the irradiating portion for irradiating the outer peripheral portion Wp is separate from the rod camera 12, And is located on the same side as the load camera 12 with respect to the processing board W.

The road camera 12 forms an image by the light reflected from the photographing area 2Z. The first back side image IM2 captured by the load camera 12 is reflected by the first image IM21 by the light reflected by the flat portion Wp1 and reflected by the bevel portion Wp2 leading to the flat portion Wp1 And the second image IM22 by the light.

For example, when parallel light is irradiated on the back surface WR along the direction orthogonal to the back surface WR, the angle of incidence of the light incident on the flat portion Wp1 is substantially 0 deg., And the light is emitted from the flat portion Wp1 The reflection angle of the regularly reflected light is almost 0 °. Therefore, the load camera 12 having the optical axis orthogonal to the back surface WR produces the first image IM21 with a very high brightness. On the other hand, since the bevel portion Wp2 is curved, the incident angle of the light incident on the bevel portion Wp2 is continuously changed from 0 DEG toward the outline E of the processing substrate W, and is emitted from the bevel portion Wp2 The reflection angle of the regular reflection light changes more than 0 DEG. Therefore, the load camera 12 having the optical axis orthogonal to the back surface WR generates the second image IM22 with a very low brightness as compared with the first image IM21. As a result, in the first back side image IM2, there is a large difference in contrast between the first image IM21 and the second image IM22.

The image processing section 20 performs edge detection based on the contrast with respect to the first back side image IM2 and extracts the boundary between the first image IM21 and the second image IM22. The image processing unit 20 then divides the boundary between the extracted first image IM21 and the second image IM22, that is, the boundary between the flat portion Wp1 and the bevel portion Wp2 into a part of the outer shape of the processed substrate W (Boundary portion). The image processing section 20 calculates the position of the boundary between the first image IM21 and the second image IM22 in the relative coordinate system, thereby specifying the contour of the processed substrate W. [

5 is an example of an image taken by the load camera 12. Fig.

5, the first back side image IM2 includes the image IMW of the processing substrate W and the background image IMB of the processing substrate W. As shown in Fig. The portion of the image IMW of the processing substrate W having a relatively high brightness is the image of the flat portion Wp1, that is, the first image IM21. On the other hand, the portion of the image IMW of the processed substrate W having a relatively low brightness is the image of the bevel portion Wp2, that is, the second image IM22. The brightness in the background image IMB of the processing substrate W is lower than the brightness of the first image IM21 but higher than the brightness of the second image IM22.

Here, the outline E of the processed substrate W is an outline formed by connecting the outermost points on the processed substrate W, and is also an outline of the beveled portion Wp2. As described above, this bevel portion Wp2 is generally composed of a curved surface having a predetermined curvature. The curved surface of the bevel portion Wp2 gradually decreases the brightness of the image IMW of the processing substrate W toward the outline E of the processing substrate W and the second phase IM22 of the bevel portion Wp2, And the boundary of the background image (IMB) of the processing substrate W becomes indistinct. When the outline E of the processed substrate W is detected at the boundary between the second phase IM22 and the background image IMB, a large error is caused in the accuracy of the position. Particularly, in the case of the detection requiring a precision of several micrometers at the position of the processed substrate W, the unclearness at the above-mentioned boundary becomes a large error.

On the contrary, the boundary between the bevel portion Wp2 and the flat portion Wp1 is a boundary where the surface direction of the process substrate W is changed. For example, in the photographing in the direction opposite to the flat portion Wp1, The boundary between the first phase IM21 and the second phase IM22 is clearly detected. Therefore, if the boundary between the first phase IM21 and the second phase IM22 has the above-described configuration that is specified as the outer shape of the process substrate W, in the detection of the position of the process substrate W using the outer shape, It is possible to improve the precision of the measurement.

The image processing section 20 calculates the position of the center of the first back face by using the first back side image IM2 of the processing board W in the back side position specifying processing. That is, the image processing section 20 performs edge detection or the like on each first back side image IM2 to determine whether the boundary between the flat portion Wp1 and the bevel portion Wp2 in the camera coordinate system of the road camera 12 And calculates the position. Next, the image processing section 20 calculates the relative position between the boundary positions from the optical axis position of each rod camera 12 and the boundary position in the camera coordinate system. Then, the image processing section 20 calculates the position of the center of the first back surface in the relative coordinate system so that an imaginary circle centered on the center of the first back surface passes through each boundary portion.

[Deposition Apparatus]

Referring to Fig. 6, the evaporation apparatus 30 on which the EFEM 10 is mounted will be described. In addition, the deposition apparatus 30 may be provided with the EFEM 10 and the deposition chamber 34.

As shown in FIG. 6, the deposition apparatus 30 has a transfer chamber 31, and the transfer chamber 31 is connected to the transfer chamber 32 via a gate valve. The transfer chamber 31 has a transfer robot for transferring the substrates W and W0. The loading and unloading chamber 32 loads the substrates W and W0 from the outside of the transfer chamber 31 into the transfer chamber 31 and transfers the substrates W and W0 from the transfer chamber 31 to the outside of the transfer chamber 31. [ . The EFEM 10 is connected to the loading / unloading chamber 32 through a gate valve. The EFEM 10 conveys the substrate W0 for calibration to the loading and unloading chamber 32 while carrying the substrate W0 for calibration from the loading and unloading chamber 32. The EFEM 10 transports the processed substrate W before film formation to the loading and unloading chamber 32 and the processed substrate W after film forming from the loading and unloading chamber 32.

In the transfer chamber 31, two deposition chambers 34, an inversion chamber 35 and a sputter chamber 36 are connected. Each chamber is connected to the transfer chamber 31 through a gate valve. The deposition chamber 34 forms a predetermined thin film on the processed substrate W by a vacuum deposition method. The inversion chamber 35 inverts the processing substrate W carried in the inversion chamber 35. [ The inversion in the reverse chamber 35 is performed when the processed substrate W is brought into the reverse chamber 35 in the vertical direction by the position of the front face WF and the back side WR of the processing substrate W, (35). The sputter chamber 36 forms a predetermined thin film on the processed substrate W by the sputtering method.

The deposition apparatus 30 includes a control device 30C and the control device 30C includes the above-described image processing section 20 and the chambers 31, 32, 34, and 35 , 36 are controlled. The control device 30C controls the driving of the carrying robot, for example, to move the processing substrate W from one chamber connected to the carrying chamber 31 to another chamber, through the carrying chamber 31, Return. The control device 30C controls each of the deposition chamber 34 and the sputter chamber 36 by controlling the film forming process in each of the deposition chambers 34 and the drive of the mechanism relating to the film forming process in the sputter chamber 36, A predetermined thin film is formed.

[Configuration of the deposition chamber]

The configuration of the deposition chamber 34 will be described with reference to Figs. Hereinafter, the configuration used in the calibration process and the configuration of the deposition mechanism, which is a mechanism for performing deposition on the process substrate W, will be mainly described in the configuration of the deposition chamber 34. FIG.

7, the deposition chamber 34 includes an evaporation source 41 that emits the sublimated evaporation material, a plurality of deposition cameras 42, a substrate holder 43 that supports the substrates W and W0, A mask holder 44 for supporting the deposition mask M, a driving source 45, and a driving mechanism 46. In the deposition chamber 34, the frame 47, which accommodates the evaporation source 41, the substrate holder 43 and the mask holder 44, is connected to the exhaust system and is depressurized to a predetermined pressure. The plurality of deposition cameras 42 function as a back side photographing unit similarly to the plurality of load cameras 12 of the EFEM 10. [ In the following, an example in which three deposition cameras 42 are provided will be described.

The evaporation source 41 forms a thin film by the evaporation material 42M on the surface WF of the processing substrate W by heating the evaporation material. As the evaporation source 41, for example, a resistance heating type evaporation source, an induction heating type evaporation source, and an evaporation source including an electron beam can be used. The evaporation material 42M is a material which evaporates by being heated by the evaporation source 41 and is a thin film material formed on the surface WF of the process substrate W. The evaporation material 42M is, for example, an organic material, but may be an inorganic material.

The three deposition cameras 42 are, for example, CCD cameras, one for each substrate mark. Each of the deposition cameras 42 is fixed above the substrate W and supported on the substrate holder 43 and on the outside of the frame 47. The position of the optical axis 4A of each deposition camera 42 is fixed with respect to the position of the optical axis 4A of the other deposition cameras 42. [ Each of the deposition cameras 42 faces the back surface WR of the substrates W and W0, and photographs the respective portions (photographs them).

The image photographed by each deposition camera 42 is the second back side image IM4. The second back side image IM4 of the calibration substrate W0 includes a transmission image of the substrate mark Wm through the calibration substrate W0. The image processing section 20 uses the second back side image IM4 of the calibration substrate W0 for the calibration process. The second back side image IM4 of the processing substrate W includes the peripheral portion Wp of the processing substrate W. [ The image processing section 20 uses the second back side image IM4 of the processed substrate W for specifying the back side position.

The substrate holder 43 is located between the three deposition cameras 42 and the evaporation source 41. The substrate holder 43 defines a virtual placement area WA. The placement area WA is a target area on which the substrates W and W0 are to be arranged. The substrate holder 43 supports the substrates W and W0 which are brought into the deposition chamber 34 from the reversing chamber 35. [ The substrate holder 43 allows the substrates W and W0 to be taken out of the deposition chamber 34 into the inversion chamber 35. [ The substrate holder 43 supports the outer peripheral portion Wp of the surface WF with the surface WF of the processed substrate W directed toward the evaporation source 41 (the lower side in Fig. 7) The rear surface WR and the three deposition cameras 42 are opposed to each other.

At this time, since there is an obstacle such as the substrate holder 43, for example, the substrate mark Wm located on the surface WF is hardly picked up on the side opposite to the surface WF. The substrate mark Wm located on the surface WF is impermeable to the substrate W because the processed substrate W is impermeable. That is, it is difficult to detect the position of the substrate mark Wm in a state in which the substrate holder 43 supports the process substrate W.

The mask holder 44 is positioned between the three deposition cameras 42 and the evaporation source 41. The mask holder 44 defines a virtual arrangement area MA. The deposition area MA is the target area where the deposition mask M is to be disposed. The mask holder 44 supports the peripheral portion of the deposition mask M and confronts the deposition mask M with the surface WF of the substrates W and W0. The deposition mask M has an opening for forming a predetermined pattern on the surface WF of the substrate W. [ The mask holder 44 disposes the deposition mask M on the evaporation source 41 side with respect to the substrates W and W0. The deposition mask M has a size protruding from the process substrate W in the entire circumferential direction on the process substrate W. [ The deposition mask M has three mask marks Mm at a portion protruding from the process substrate W. [ In addition, the mask mark Mm of the deposition mask M can be used to specify the center position of the deposition mask by photographing by the deposition camera 42. [

The driving source (45) outputs power for driving the driving mechanism (46). The driving mechanism 46 receives the power of the driving source 45 and moves the substrate holder 43 in the horizontal direction. The driving mechanism 46 receives the power of the driving source 45 and rotates the mask holder 44 and the substrate holder 43 in the circumferential direction of the substrates W and W0. The drive mechanism 46 switches the independent rotation of the substrate holder 43 and the independent rotation of the mask holder 44 and the rotation of the substrate holder 43 and the mask holder 44 in unison. The driving mechanism 46 receives the power of the driving source 45 to move the mask holder 44 and the substrate holder 43 up and down. The driving mechanism 46 switches the independent lifting and lowering of the substrate holder 43 and the independent lifting and lowering of the mask holder 44 and the ascending and descending of the substrate holder 43 and the mask holder 44 together.

For example, the movement of the substrate holder 43 in the independent horizontal direction and the independent rotation of the substrate holder 43 are performed in such a manner that the center of the pattern of the process substrate W and the center of the mask, which is the center of the deposition mask M, . The independent rotation of the mask holder 44 is used to place the deposition mask M at a predetermined position. The rotation in which the substrate holder 43 and the mask holder 44 are integrally formed is used to deposit an evaporation material on the surface of the processed substrate W. [

For example, the independent lifting and lowering of the substrate holder 43 is used for loading and unloading the substrates W and W0 and for disposing the processing substrate W to a predetermined position of vapor deposition. The independent lifting and lowering of the mask holder 44 is used for loading and unloading the deposition mask M and for arranging the deposition mask M at a predetermined position of deposition. The substrate holder 43 and the mask holder 44 are integrally moved up and down to be used for movement when rotating the processing substrate W and the deposition mask M together.

8 shows an area in which each deposition camera 42 photographs. Since the positions of the process substrate W and the calibration substrate W0 relative to the regions to be photographed by the deposition cameras 42 are almost the same as each other, Region on the calibration substrate W0.

As shown in Fig. 8, the calibration substrate W0 is disposed in the placement area WA, and the deposition mask M is placed in the placement area MA. The position of the mask mark Mm is located outside the outline E of the substrate W0 for calibration. The mask mark Mm has a rectangular shape in a plane opposite to the back surface WR of the substrate W0 for calibration, but may have a shape different from a rectangular shape, for example, a cross shape.

Each of the deposition cameras 42 defines an area in which an image is to be taken as an imaging area 4Z (a wish of a dotted line in Fig. 8). Each photographing area 4Z is almost evenly distributed in the circumferential direction of the arrangement area WA. The optical axis 4A of the deposition camera 42 is located at the center of the photographing area 4Z. Each photographing area 4Z includes a mask mark Mm and a transmission image of each substrate mark Wm. Further, the photographing area 4Z includes the boundary between the flat portion Wp1 and the bevel portion Wp2.

[Calibration process: deposition chamber (34)]

As shown in Fig. 9, in the calibration processing, the image processing section 20 performs image analysis on the second back side image IM4 of the calibration board W0 (step S21). That is, the image processing section 20 performs edge detection or the like on each second back side image IM4 and sets the relative position of the substrate mark Wm with respect to the optical axis 4A in the camera coordinate system of the deposition camera 42 as . Further, the image processing unit 20 sets the position of the optical axis 4A in the camera coordinate system as the center of the second back side image IM4, for example.

Subsequently, the image processing section 20 calculates the position of the substrate mark Wm in the camera coordinate system of the deposition camera 42 and the relative coordinates of the substrate mark Wm, The optical axis position is calculated (step S22). That is, the image processing section 20 calculates the relative positions of the three deposition cameras 42 between the optical axes 4A. The image processing unit 20 stores the position of the optical axis of each deposition camera 42 as an example of a relative position between the cameras. The image processing unit 20 updates the position of the optical axis of each deposition camera 42 every time the calibration process is performed.

[Specific treatment of backside position: deposition chamber (34)]

The image processing section 20 calculates the position of the center of the mask by using the second back side image IM4 of the deposition mask M in the back side position specification processing. That is, the image processing section 20 performs edge detection or the like on each second back side image IM4, and calculates the position of the mask mark Mm in the camera coordinate system of the deposition camera 42. [ Next, the image processing section 20 calculates the relative position between the optical axis position of each deposition camera 42 and the position of the mask mark Mm in the camera coordinate system between the mask marks Mm. Then, the image processing section 20 calculates the position of the center of the mask in the relative coordinate system so that an imaginary circle centered at the center of the mask passes through the relative position of each mask mark Mm.

The image processing section 20 calculates the position of the center of the second back face by using the second back side image IM4 of the processing board W in the back side position specifying processing. That is, the image processing unit 20 performs edge detection or the like on each second back side image IM4 and detects the edge position of the boundary portion between the flat portion Wp1 and the bevel portion Wp2 in the camera coordinate system of the deposition camera 42 And calculates the position. Then, the image processing section 20 calculates the relative position between the boundary positions from the position of the optical axis of each deposition camera 42 and the boundary portion in the camera coordinate system. Then, the image processing section 20 calculates the position of the center of the second back surface in the relative coordinate system so that an imaginary circle centered on the center of the second back surface passes through each boundary portion.

[Action]

The calibration processing, the surface position specifying processing, the back side position specifying processing and the positioning processing performed by the control device 30C will be described with reference to Fig.

[Calibration process: control device 30C]

The control device 30C first places the calibration substrate W0 in the arrangement area WA of the EFEM 10 in the calibration process. Subsequently, the control device 30C photographs the surface image IM1 including the substrate mark Wm to each mark camera 11. Then, Further, the control device 30C photographs the first back side image IM2 including the transmission image of the substrate mark Wm to each load camera 12. Subsequently, the control device 30C brings the calibration substrate W0 into the deposition chamber 34, and outputs the second back side image IM4 including the transmission image of the substrate mark Wm and the mask mark Mm And is photographed by the deposition camera 42.

The control device 30C calculates the optical axis position P1 of each mark camera 11 as a relative position between the cameras 11 using the relative coordinates of the surface image IM1 and the substrate mark Wm do. The control device 30C also uses the relative coordinates of the first back side image IM2 and the substrate mark Wm to determine the optical axis position P2 of each load camera 12, . The control device 30C calculates the optical axis position P3 of each deposition camera 42 as a relative position between the cameras 42 by using the relative coordinates of the second back side image IM4 and the substrate mark Wm do.

The control device 30C stores the optical axis position P1 of these mark cameras 11, the optical axis position P2 of each rod camera 12 and the optical axis position P3 of each deposition camera 42. [ Further, the control device 30C performs the above-described calibration processing each time a predetermined number of processing wafers W are processed.

[Specific treatment of surface position]

The control device 30C first places the process substrate W in the arrangement area WA in the process of specifying the surface position. Subsequently, the control device 30C photographs the surface image IM1 of the surface WF including the substrate mark Wm to each mark camera 11. Then,

The control device 30C uses the surface image IM1 and the optical axis position P1 of each mark camera 11 to determine whether or not the imaginary circle centered on the pattern center passes through each substrate mark Wm The position of the center of the pattern in the relative coordinate system is calculated.

[Specific processing of back side position]

The control device 30C shoots the first back side image IM2 including the boundary between the flat portion Wp1 and the bevel portion Wp2 to each load camera 12 in the back side position specification processing. The control device 30C carries the process substrate W into the deposition chamber 34 and forms a second back side image including the boundary between the flat portion Wp1 and the bevel portion Wp2 and the mask mark Mm IM4) to each of the deposition cameras (42).

The control device 30C then uses the first back side image IM2 and the optical axis position P2 of each load camera 12 so that an imaginary circle centered on the first back side center is the flat portion Wp1 The position of the center of the first back surface in the relative coordinate system is calculated so as to pass the boundary of the bevel portion Wp2. The control device 30C also uses the second back side image IM4 and the optical axis position P3 of each deposition camera 42 so that an imaginary circle centered on the center of the second backside is the flat portion Wp1 The position of the center of the second back surface in the relative coordinate system is calculated so as to pass through the boundary of the bevel portion Wp2. The control device 30C also uses the second back side image IM4 and the optical axis position P3 of each deposition camera 42 so that an imaginary circle centered on the mask center passes through each mask mark Mm The position of the center of the mask in the relative coordinate system is calculated.

In addition, the back surface position specification processing can be performed on the processing substrate W disposed in the arrangement area WA of the EFEM 10, together with the above-described surface position specifying processing. At this time, the photographing of the substrate mark Wm by the mark camera 11 in the EFEM 10 and the photographing of the flat portion Wp1 and the bevel portion Wp2 by the respective load cameras 12 are simultaneously performed Or may be performed at respective timings. When two photographing operations are performed at respective timings, photographing by each mark camera 11 may be performed prior to photographing by each load camera 12, photographing by each load camera 12 may be performed by each mark camera 11). When performing two shots at respective timings, the processing substrate W may be rotated between two shots.

The photographing of the substrate mark Wm by each mark camera 11 may be performed simultaneously or may be performed at each timing and the flat portion Wp1 and the bevel portion Wp2 by the respective load cameras 12 May be performed at the same time, or may be performed at respective timings. Incidentally, the processed substrate W may be rotated every time the image is taken by one camera. Particularly, the position of the substrate mark Wm may be different for each of the process substrates W, and in a state where the position of the process substrate W is fixed at one position, it may not be possible to capture all the substrate marks Wm. In this case, the processed substrate W may be rotated every time one substrate mark Wm is photographed. When a plurality of substrate marks are photographed while rotating the process substrate W, the relative position between the plurality of substrate marks can be grasped by the rotation angle of the substrate W. [ Further, the rotation angle of the processing substrate W can be detected by a detection unit that detects the rotation angle, and for example, an encoder can be used as the detection unit.

[Position adjustment processing]

The control device 30C calculates the shift amount between the center of the pattern and the center of the first back surface by using the center of the pattern and the center of the first back surface by photographing the processed wafer W (for example, n is an integer of 1 or more) (DELTA x, DELTA y, DELTA [theta]). Subsequently, the control device 30C loads the n-th processed substrate W into the deposition chamber 34. Then, Then, the control device 30C calculates the correction amount for aligning the center of the second back surface after reflection with the shift amount at the center of the second back surface of the n-th processed substrate W. [ The control device 30C outputs a drive signal SIG for driving the drive source 45 to drive the drive mechanism 46 with a drive amount corresponding to this correction amount.

As described above, according to the deposition apparatus 30 described above, each of the three camera coordinate systems, that is, the camera coordinate system of the mark camera 11, the camera coordinate system of the load camera 12, and the camera coordinate system of the deposition camera 42, It is possible to perform calibration by the substrate W0. As a result, it is possible to perform mutual coordinate conversion in each camera coordinate system. In other words, it is possible to suppress the positional shift caused by the coordinate transformation when the coordinate transformation is performed on each other in each camera coordinate system.

As described above, according to the embodiment, the following effects can be obtained.

(1), the detection accuracy of the position of the processed substrate W by photographing is increased to the same level as the detection accuracy of the position of the process substrate W by surface photographing, that is, the detection accuracy by the photographing of the substrate mark Wm . As a result, it is possible to increase the detection accuracy of the position of the substrate W in the processing environment in which only the result of the back side photographing is obtained, for example, in the environment in which the above-described deposition processing is performed, have.

(2) Especially, the processing states can be matched between the sputter depositing process in which the substrate is transported according to the pattern position and the evaporation deposition film in which the substrate is transported depending on the back position.

(3) The back side image is taken in the EFEM 10 and the back side image is also taken in the deposition chamber 34 so that the first back side position in the EFEM 10 and the second back side position in the deposition chamber 34 are matched The processed substrate W is transported to the deposition chamber 34. [ As a result, the effect according to the above (1) obtained in the EFEM 10 can be obtained in the deposition chamber 34 as well.

(4) In particular, the treatment accompanied by heating such as vapor deposition film formation or plasma film formation causes the optical axis of the camera under the environment of the treatment to be displaced with time. In this respect, since the relative position between the deposition cameras 42 in the deposition chamber 34 is updated every calibration process, the effect according to (3) can be obtained over a long period of time.

(5) Since the shape and size of the calibration substrate W0 are almost the same as that of the process substrate W, it is possible to standardize the transfer system of the process substrate W and the transfer system of the calibration substrate W0. Thus, for example, each time a predetermined number of processed substrates W are processed, the calibration process using the calibration substrate W0 can be performed without significantly changing the operating state of the transport system. As a result, it is possible to secure the execution of the calibrating process at an appropriate frequency while suppressing the decrease in the operation efficiency of the evaporation apparatus.

(6) When the coefficient of thermal expansion of the calibration substrate W0 is 3 ppm / DEG C or less, the thermal expansion occurring in the calibration substrate W0 is suppressed to a sufficiently small range. As a result, The detection error can be reduced.

(7) The boundary between the first image IM21 and the second image IM22 is detected based on the contrast, and the back side position of the processed substrate W is detected by using the detected boundary. This makes it possible to improve the detection accuracy of the back side position as compared with the configuration in which the back side position is detected from the outline E of the processed substrate W. [

(8) In particular, in the configuration in which the processed substrate W is impermeable, since the substrate mark Wm can not be optically detected on the side opposite to the back side WR, the usability is high in the above points.

(9) Since the positional accuracy of the processing substrate W with respect to the deposition mask M can be improved, in the processing relative to the position of the processing substrate W and the deposition mask M, It becomes possible.

In addition, the above-described embodiment can be appropriately modified and carried out as follows.

[Specific treatment of position]

The boundary used by the position detecting device for specifying the position of the processing substrate W may be one of the peripheral portions Wp of the processing substrate W or may be one or more.

For example, the shape of the boundary between the flat portion Wp1 and the bevel portion Wp2 is microscopically different for each processing of the bevel portion Wp2, that is, for each processing substrate W, There is a case where the shape is one. The configuration of the boundary between the flat portion Wp1 and the bevel portion Wp2 is set so that the shape of the boundary between the flat portion Wp1 and the bevel portion Wp2 is the entire And collected in advance as a peripheral shape. Then, the position of the processed substrate W is specified by specifying which of the peripheral edges the shape of the boundary between the extracted flat portion Wp1 and the bevel portion Wp2 exists.

When calculating the center of the first back surface and calculating the center of the second back surface, it is preferable to photograph a portion including substantially the same bevel portion Wp2 in the outer peripheral portion Wp. As a result, the accuracy of detecting the position of the processed substrate W can be further increased. The control device 30C controls the position of the feature point of the notch or the like provided on the process substrate W and the position of the feature point of the deposition camera 2Z on the basis of the rotation angle of the process substrate W The portion including substantially the same bevel portion Wp2 in the outer peripheral portion Wp can be positioned in the photographing region 4Z of the image pickup portion 42. [

[Calibration substrate (W0)]

The calibration substrate W0 may be a substrate mark Wm, for example, with a through hole penetrating the calibration substrate W0. Even if the substrate mark Wm has a through-hole structure, the effects according to (1) to (9) above can be obtained.

If the substrate mark Wm is a thin film pattern, the thickness of the substrate mark Wm is thin. Therefore, the position of the substrate mark Wm due to the surface observation and the position of the substrate mark Wm Are almost coincident with each other. Therefore, in the configuration in which the substrate mark Wm is a thin film pattern, the detection accuracy of the substrate mark Wm on the front and back, and the detection accuracy of the position of the substrate can be enhanced, as compared with the configuration in which the substrate mark Wm passes through.

The substrate W0 for calibration may be provided with, for example, a light-reflective substrate mark Wm and an antireflection film covering the periphery thereof. The cameras 12 and 42 which are located outside the frame bodies 13 and 47 and which are provided with the telecentric optical system are not provided with cameras or telecentric optical systems normally located inside the frame bodies 13 and 47 Compared with a camera, the distance between the calibration substrate W0 and the objective lens, that is, the working distance of the camera, is large, and light other than light from the objective surface is likely to enter the objective lens.

In this regard, in the case of the calibration substrate W0 having the antireflection film, each substrate mark Wm of light reflectivity and the antireflection film covering the periphery thereof suppress reflection on the objective surface. As a result, it is possible to clearly capture each substrate mark Wm even with the cameras 12 and 42 having large working distances.

[Deposition Apparatus]

It is also possible that the evaporation apparatus includes only the surface photographing section in the EFEM 10 and the back side photographing section in the evaporation chamber 34. Even when the surface photographing section and the backside photographing section are mounted on the respective frame members 13 and 47, the effect according to the above (1) can be obtained.

In addition, if the EFEM 10 is provided with the surface photographing section and the back face photographing section, it is possible for the camera of the surface photographing section and the camera of the back face photographing section to photograph one substrate mark Wm at a time. Therefore, it is possible to suppress displacement of the relative position of the substrate mark Wm due to a change in the environment, and further to improve the detection accuracy of the position of the substrate.

E: contour M: deposition mask
W: processed substrate MA, WA: arrangement region
Mm: mask mark P1, P2, P3: optical axis position
W0: substrate for calibration WF: surface
Wm: substrate mark Wp: outer peripheral portion
WR: backside IM1: surface image
IM2: first back side image IM4: second back side image
IMB: background SIG: drive signal
Wp1: Flat portion Wp2: Bevel portion
IM21: 1st phase IM22: 2nd phase
1A, 2A, 4A: optical axis 1Z, 2Z, 4Z: photographing area
10: EFEM 10S: stage
11: Mark camera 12: Load camera
13, 47: frame body 20:
30: Deposition device 30C: Control device
31: transfer chamber 32: transfer chamber
34: deposition chamber 35: reverse chamber
36: sputter chamber 41: evaporation source
42: deposition camera 42M: evaporation material
43: substrate holder 44: mask holder
45: driving source 46: driving mechanism

Claims (7)

1. A position detecting device for detecting a position of a process substrate which is a non-transparent substrate,
Wherein the surface of the calibration substrate, which is a light-transmitting substrate, has a plurality of substrate marks,
The position detecting device includes:
A surface photographing unit including a plurality of cameras each corresponding to one of the plurality of substrate marks;
A back surface photographing unit including a plurality of cameras each corresponding to one of the plurality of substrate marks;
A plurality of cameras of the surface photographing section calculate relative positions between the cameras of the surface photographing section from a result of photographing a plurality of substrate marks of the calibration board, and a relative position between the cameras of the surface photographing section and a plurality of Calculating a position of the processed substrate by surface photographing using a result of the camera photographing the processed substrate,
Wherein the plurality of cameras of the back side photographing section calculate relative positions of the back side photographing section between the cameras from the result of photographing the transmission images of the plurality of substrate marks of the calibration substrate, And an image processing section for calculating the position of the processed substrate by back side imaging by using a result of photographing the processing substrate by a plurality of subsidiary cameras. The method according to claim 1,
An object to be photographed by a plurality of cameras of the surface photographing unit with respect to the process substrate includes a plurality of substrate marks located on a surface of the process substrate,
Wherein an object to be photographed by a plurality of cameras of the back side photographing unit with respect to the processing substrate includes a flat portion located on the back surface of the processing substrate and a boundary between the flat portion and the bevel portion leading to the flat portion,
Wherein the image processor extracts the boundary between the flat portion and the bevel portion captured by the plurality of cameras of the back side photographing portion based on the contrast of the flat portion and the bevel portion, And uses the processed substrate as a result of photographing the processed substrate. 1. A position detection method for detecting a position of a processing substrate which is an impermeable substrate,
A method of manufacturing a semiconductor device, comprising the steps of: using a calibration substrate which is a light-transmissive substrate having a plurality of substrate marks on a surface thereof, wherein a plurality of substrate marks, each including a plurality of cameras each corresponding to one of the plurality of substrate marks, A substrate on the front side of the substrate,
Taking a plurality of substrate marks from the back side of the calibration substrate in a back side imaging unit including a plurality of cameras each corresponding to one of the plurality of substrate marks,
A plurality of cameras of the surface photographing section calculate a relative position between the camera of the surface photographing section and a camera from a result of photographing a plurality of substrate marks of the calibration substrate,
Calculating a position of the processed substrate by surface photographing in the image processing section using a relative position between the camera of the surface photographing section and a result of photographing the processed substrate by a plurality of cameras of the surface photographing section;
The plurality of cameras of the back side photographing section calculate the relative position between the cameras of the back side photographing section from the result of photographing the transmission images of the plurality of substrate marks of the calibration substrate by the image processing section,
And calculating the position of the processed substrate by the back side photographing using the image processing unit using the relative position between the cameras of the back side photographing unit and the result of photographing the processing substrate by a plurality of cameras of the back side photographing unit. . The method of claim 3,
Wherein each of the cameras of the back side photographing section includes a telecentric optical system, photographs the processing substrate outside the frame housing the processing substrate,
Wherein the calibration substrate comprises an antireflection film covering the periphery of each substrate mark of light reflectivity. 5. The method of claim 4,
Wherein the thermal expansion coefficient of the calibration substrate is not more than 3 ppm / 占 폚. A deposition chamber for performing deposition on a surface of a process substrate which is an impermeable substrate,
And a position detection device for detecting the position of the processed substrate,
The surface of the calibration substrate, which is a light-transmitting substrate, has a plurality of substrate marks,
The position detecting device includes:
A surface photographing unit including a plurality of cameras each corresponding to one of the plurality of substrate marks;
A back surface photographing unit including a plurality of cameras each corresponding to one of the plurality of substrate marks;
A plurality of cameras of the surface photographing section calculate relative positions between the cameras of the surface photographing section from a result of photographing a plurality of substrate marks of the calibration board, and a relative position between the cameras of the surface photographing section and a plurality of Calculating a position of the processed substrate by surface photographing using a result of photographing the processed substrate by the camera,
Wherein the plurality of cameras of the back side photographing section calculate relative positions of the back side photographing section between the cameras from the result of photographing the transmission images of the plurality of substrate marks of the calibration substrate, And an image processing unit for calculating a position of the processed substrate by back side imaging by using a result of photographing the processing substrate by a plurality of subsidiary cameras. The method according to claim 6,
Two back side photographing units,
A front end module for carrying a target substrate from the outside to the deposition apparatus,
And an inverting chamber for inverting the front and back surfaces of the target substrate carried by the front end module and loading the target substrate into the deposition chamber,
Wherein the target substrate is a selected one of the processing substrate and the calibration substrate,
Wherein the one back side photographing section is mounted on the front end module together with the surface photographing section,
And the other back side photographing unit is mounted in the deposition chamber.

Images