KR20180065405A - Showerhead and substrate processing apparatus having the same - Google Patents

Showerhead and substrate processing apparatus having the same Download PDF

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KR20180065405A
KR20180065405A KR1020160166160A KR20160166160A KR20180065405A KR 20180065405 A KR20180065405 A KR 20180065405A KR 1020160166160 A KR1020160166160 A KR 1020160166160A KR 20160166160 A KR20160166160 A KR 20160166160A KR 20180065405 A KR20180065405 A KR 20180065405A
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substrate
gas
gas inlet
center
top plate
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KR1020160166160A
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KR102193666B1 (en
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유승관
김일경
손진웅
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주식회사 원익아이피에스
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/205—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support

Abstract

The present invention relates to a substrate treatment apparatus, and more particularly, to a shower head assembly of a substrate treatment apparatus which performs a substrate treatment such as etching or deposition, and to a substrate treatment apparatus having the same. The substrate treatment apparatus of the present invention comprises: a process chamber (100) for forming a treatment space (S1) for treating a substrate; a substrate support unit (190) installed in the process chamber (100) to support a substrate (10); and a shower head assembly (130) installed on an upper portion of the substrate support unit (150) to spray gas for performing a process. The shower head assembly (130) includes: a top plate (132) having a gas inlet (133) formed at the center (C) thereof; and a spray plate (131) installed at a lower portion of the top plate (132), and having a plurality of spray holes (131a) for spraying gas into the treatment space (S1). A diffusion space (S2) in which the gas is diffused, is formed between the top plate (132) and the spray plate (131). In addition, a vortex forming prevention unit for preventing vortex from being formed by colliding the gas introduced through the gas inlet (133) with an upper surface of the spray plate (131) is provided around the gas inlet (133) of a lower surface of the top plate (132).

Description

샤워헤드조립체 및 그를 가지는 기판처리장치 {Showerhead and substrate processing apparatus having the same}[0001] The present invention relates to a showerhead assembly and a substrate processing apparatus having the same.

본 발명은 기판처리장치에 관한 것으로서, 보다 상세하게는 식각, 증착 등 기판처리를 수행하는 기판처리장치의 샤워헤드조립체 및 그를 가지는 기판처리장치에 관한 것이다.The present invention relates to a substrate processing apparatus, and more particularly, to a showerhead assembly of a substrate processing apparatus that performs substrate processing such as etching, deposition, and the like, and a substrate processing apparatus having the same.

메모리소자, CPU 등의 시스템 LSI와 같은 반도체 등을 제조하기 위해서는, 실리콘 웨이퍼 기판에 대한 식각, 증착 등의 기판처리공정(반도체공정)을 거쳐야 한다.In order to manufacture a semiconductor such as a system LSI such as a memory device and a CPU, a substrate processing step (semiconductor processing) such as etching and deposition for a silicon wafer substrate must be performed.

그리고 식각, 증착 등의 기판처리공정을 위한 기판처리장치는, 밀폐된 처리공간을 형성하는 공정챔버와, 기판을 지지하는 기판지지부와, 공정챔버의 상부에 설치되어 처리공간에 가스를 분사하는 샤워헤드조립체를 포함하여 구성됨이 일반적이다.The substrate processing apparatus for a substrate processing process such as etching and vapor deposition includes a process chamber for forming a closed process space, a substrate support for supporting the substrate, a shower disposed above the process chamber for spraying gas into the process space, Head assembly.

상기와 같은 구성을 가지는 종래의 기판처리장치는, 샤워헤드 내부에 구비된 확산공간에서 가스의 확산 후 처리공간으로 가스를 분사시키면서 공정종류에 따라서 전원인가에 의한 플라즈마 형성, 가열 등을 통하여 기판처리를 수행함이 일반적이다.In the conventional substrate processing apparatus having the above-described structure, the gas is injected into the diffusion space after the gas diffusion in the diffusion space provided inside the shower head, and the substrate is processed through plasma formation by heating, .

그런데 종래의 기판처리장치에 있어서, 도 4에 도시된 바와 같이, 샤워헤드 내에 구비된 확산공간에서의 가스의 흐름에 와류가 발생되며 처리공간에서도 가스흐름에 와류가 발생되어 증착높이가 기판의 위치에 따라서 달라지는 등 균일한 기판처리가 불가능해지는 문제점이 있다.However, in the conventional substrate processing apparatus, as shown in FIG. 4, a vortex is generated in the gas flow in the diffusion space provided in the showerhead, and a vortex is generated in the gas flow in the processing space, So that uniform substrate processing can not be performed.

본 발명은, 상기와 같은 문제점을 해결하기 위하여, 확산공간에서의 가스의 와류형성을 최소화함으로써 처리공간으로의 가스분사의 제어를 용이하게 하여 공정조건을 최적화할 수 있는 샤워헤드조립체 및 그를 가지는 기판처리장치를 제공하는데 있다.SUMMARY OF THE INVENTION The present invention is directed to a showerhead assembly capable of minimizing the formation of gas vapors in the diffusion space and facilitating control of gas injection into the processing space to optimize process conditions, And to provide a processing apparatus.

본 발명은 상기와 같은 본 발명의 목적을 달성하기 위하여 창출된 것으로서, 본 발명은, 기판처리를 위한 처리공간(S1)을 형성하는 공정챔버(100)와; 상기 공정챔버(100)에 설치되어 기판(10)을 지지하는 기판지지부(190)와; 상기 기판지지부(150)의 상부에 설치되어 공정수행을 위한 가스를 분사하는 샤워헤드조립체(130)를 포함하는 기판처리장치의 샤워헤드조립체로서, 상기 샤워헤드조립체(130)는, 중심(C)에 가스도입구(133)가 형성되는 탑플레이트(132)와; 상기 탑플레이트(132)의 하부에 설치되어 상기 처리공간(S1)으로 가스를 분사하기 위한 다수의 분사구(131a)들이 형성된 분사플레이트(131)를 포함하며, 상기 탑플레이트(132) 및 상기 분사플레이트(131) 사이에는, 가스가 확산되는 확산공간(S2)이 형성되며, 상기 탑플레이트(132) 하부면의 상기 가스도입구(133) 주변에는, 상기 가스도입구(133)를 통해 유입된 가스가 상기 분사플레이트(131) 상면에 충돌하여 와류가 형성되는 것을 방지하는 와류형성방지부가 구비되는 것을 특징으로 하는 샤워헤드조립체를 개시한다.The present invention has been made in order to achieve the above-mentioned object of the present invention, and it is an object of the present invention to provide a process chamber (100) for forming a processing space (S1) A substrate support 190 installed in the process chamber 100 to support the substrate 10; And a showerhead assembly (130) installed at an upper portion of the substrate support (150) for spraying gas for performing a process, the showerhead assembly (130) having a center (C) A top plate 132 on which a gas inlet 133 is formed; And a jetting plate 131 provided at a lower portion of the top plate 132 and having a plurality of jetting ports 131a for jetting gas into the processing space S1, A diffusion space S2 in which a gas is diffused is formed between the gas inlet 133 and the gas inlet 133. A diffusion space S2 through which the gas is diffused is formed between the gas inlet 133 and the gas inlet 133, Is prevented from colliding with the upper surface of the spray plate (131) to form a vortex.

상기 분사플레이트(131)의 상면은, 평평하며, 상기 분사플레이트(131)의 상면과 대향되는 상기 탑플레이트(132)의 저면은, 상기 노즐영역을 형성하도록 상기 중심(C)을 기준으로 원주방향을 따라서 하측으로 볼록하게 형성된 볼록면부(134)가 형성될 수 있다.The top surface of the spray plate 131 is flat and the bottom surface of the top plate 132 opposed to the top surface of the spray plate 131 is in the circumferential direction with respect to the center C The convex surface portion 134 formed to be convex downward may be formed.

상기 볼록면부(134)는, 상기 가스공급관(190)과의 연결을 위한 가스도입구(133)으로부터 형성되며, 상기 탑플레이트(132)는, 상기 볼록면부(134)를 제외한 나머지 부분에서 상기 분사플레이트(131)의 상면과 평행을 이룰 수 있다.The convex surface portion 134 is formed from a gas inlet 133 for connection with the gas supply pipe 190. The top plate 132 is connected to the gas injection port 133 at a portion other than the convex surface portion 134, And may be parallel to the upper surface of the plate 131.

상기 중심(C)으로부터 상기 기판지지부(150)에 지지된 기판(10)의 가장자리(Wr)까지의 거리를 1이라 할 때, 상기 중심(C)으로부터 상기 볼록면부(134)의 끝단의 위치는, 0.24~0.27인 것이 바람직하다.The distance from the center C to the edge Wr of the substrate 10 supported by the substrate support 150 is 1 and the position of the end of the convex surface 134 from the center C is , And preferably 0.24 to 0.27.

상기 중심(C)으로부터 상기 기판지지부(150)에 지지된 기판(10)의 가장자리(Wr)까지의 거리를 1이라 할 때, 상기 볼록면부(134)의 최하점(138)(T)의 위치는, 상기 중심(C)으로부터 0.098~0.15인 것이 바람직하다.When the distance from the center C to the edge Wr of the substrate 10 supported on the substrate supporting part 150 is 1, the position of the lowermost point 138 (T) of the convex surface part 134 is , And 0.098 to 0.15 from the center (C).

본 발명은 또한 기판처리를 위한 처리공간(S1)을 형성하는 공정챔버(100)와; 상기 공정챔버(100)에 설치되어 기판(10)을 지지하는 기판지지부(190)와; 상기 기판지지부(150)의 상부에 설치되어 공정수행을 위한 가스를 분사하는 샤워헤드조립체(130)로서 상기와 같은 구성을 가지는 샤워헤드조립체(130)를 포함하는 기판처리장치를 개시한다.The present invention also relates to a process chamber (100) for forming a process space (S1) for substrate processing; A substrate support 190 installed in the process chamber 100 to support the substrate 10; And a showerhead assembly 130 having the above-described structure as a showerhead assembly 130 installed on the upper surface of the substrate support 150 to inject gas for performing a process.

본 발명에 따른 샤워헤드조립체 및 그를 가지는 기판처리장치는, 탑플레이트 하부면의 가스도입구 주변에 가스도입구를 통해 유입된 가스가 분사플레이트 상면에 충돌하여 와류가 형성되는 것을 방지하는 와류형성방지부가 구비함으로써, 탑플레이트 및 분사플레이트에 의하여 형성되는 확산공간에서 가스의 와류형성을 최소화함으로써 처리공간으로의 가스분사의 제어를 용이하게 하여 공정조건을 최적화할 수 있다.The showerhead assembly and the substrate processing apparatus having the showerhead assembly according to the present invention can prevent vortex formation that prevents gas introduced through the gas inlet from colliding with the upper surface of the spray plate around the gas inlet of the lower surface of the top plate, The provision allows the control of the gas injection into the process space to be facilitated and the process conditions to be optimized by minimizing the eddy gas formation in the diffusion space formed by the top plate and the injection plate.

다시말하면, 본 발명에 따른 샤워헤드조립체 및 그를 가지는 기판처리장치는, 확산공간에 수직 횡단면의 감소 후 다시 증가하는 와류형성방지부를 형성함으로써 확산공간에 가스의 와류형성을 최소화함으로써 처리공간으로의 가스분사의 제어를 용이하게 하여 공정조건을 최적화할 수 있다.In other words, the showerhead assembly and the substrate processing apparatus having the showerhead assembly according to the present invention can prevent gas flow into the processing space by minimizing the formation of vortex in the diffusion space by forming a vortex formation preventing portion that increases again after the decrease of vertical cross- The control of the injection can be facilitated and the process conditions can be optimized.

특히 본 발명에 따른 샤워헤드조립체 및 그를 가지는 기판처리장치는, 확산공간에 와류형성방지부의 형성에 의하여 와류형성을 최소화하게 되면 그에 따른 처리공간에서의 와류형성이 최소화되어 처리공간에서 안정적인 가스흐름의 형성이 가능하여 균일한 기판처리 환경을 제공할 수 있는 이점이 있다.Particularly, the showerhead assembly and the substrate processing apparatus having the showerhead assembly according to the present invention minimize the formation of vortex due to the formation of the vortex formation prevention portion in the diffusion space, thereby minimizing the formation of vortex in the processing space, So that it is possible to provide a uniform substrate processing environment.

도 1은, 본 발명에 따른 기판처리장치를 보여주는 단면도이다.
도 2는, 도 1의 기판처리장치에 설치되는 샤워헤드조립체 중 탑플레이트의 저면을 보여주는 저면도이다.
도 3은, 도 1에서 A부분을 확대한 확대 단면도이다.
도 4는, 종래의 샤워헤드조립체에서의 가스흐름의 시뮬레이션을 보여주는 도면으로서, 와류형성방지부를 구비하지 않은 상태의 시뮬레이션 도면이다.
도 5는, 본 발명에 따른 샤워헤드조립체에서 와류형성방지부를 구비한 경우의 가스흐름의 시뮬레이션을 보여주는 도면이다.1 is a cross-sectional view showing a substrate processing apparatus according to the present invention.
2 is a bottom view showing a bottom surface of a top plate of a showerhead assembly installed in the substrate processing apparatus of FIG.
Fig. 3 is an enlarged cross-sectional view of the portion A in Fig. 1 enlarged.
Fig. 4 is a simulation view showing a simulation of a gas flow in a conventional showerhead assembly, which is a simulation drawing without a vortex prevention part. Fig.
5 is a view showing a simulation of a gas flow in the case where the vortex formation prevention portion is provided in the showerhead assembly according to the present invention.

이하 본 발명에 따른 샤워헤드조립체 및 그를 가지는 기판처리장치에 관하여 첨부된 도면을 참조하여 설명하면 다음과 같다.Hereinafter, a showerhead assembly and a substrate processing apparatus having the same according to the present invention will be described with reference to the accompanying drawings.

본 발명에 따른 기판처리장치는, 도 1 내지 도 3에 도시된 바와 같이, 기판처리를 위한 처리공간(S1)을 형성하는 공정챔버(100)와; 공정챔버(100)에 설치되어 기판(10)을 지지하는 기판지지부(190)와; 기판지지부(150)의 상부에 설치되어 공정수행을 위한 가스를 분사하는 샤워헤드조립체(130)를 포함한다.1 to 3, the substrate processing apparatus according to the present invention comprises a process chamber 100 forming a process space S1 for substrate processing; A substrate support 190 installed in the process chamber 100 to support the substrate 10; And a showerhead assembly 130 installed at an upper portion of the substrate support 150 to inject gas for performing a process.

여기서 기판처리의 대상인 기판(10)은, 식각, 증착 등 기판처리를 요하는 기판이면 반도체 제조용 웨이퍼 등이 될 수 있다.Here, the substrate 10, which is an object of the substrate processing, may be a wafer for semiconductor manufacturing or the like if it is a substrate requiring substrate processing such as etching or vapor deposition.

상기 공정챔버(100)는, 기판처리를 위한 밀폐된 처리공간(S1)을 형성하는 구성으로서 다양한 구성이 가능하다.The process chamber 100 may have various configurations as a configuration for forming a closed processing space S1 for substrate processing.

예로서, 상기 공정챔버(100)는, 상측이 개구된 챔버본체(110)와, 챔버본체(110)의 개구에 탈착가능하게 결합된 상부리드(120)를 포함할 수 있다.For example, the process chamber 100 may include a chamber body 110 having an open upper side and an upper lid 120 detachably coupled to an opening of the chamber body 110.

상기 챔버본체(110)는, 기판지지부(150) 등이 설치되는 구성으로서 다양한 구성이 가능하며, 처리공간(S1)에 기판(10)의 도입 및 배출을 위한 내측벽에 하나 이상의 게이트(111)가 형성될 수 있다.The chamber body 110 may have various configurations including a substrate supporting part 150 and the like and may include at least one gate 111 on the inner wall for introducing and discharging the substrate 10 into the processing space S1. Can be formed.

상기 게이트(111)는, 처리공간(S1)에 기판(10)의 도입 및 배출을 위해 공정챔버(100)에 형성되는 구조로서 다양한 구조가 가능하다.The gate 111 is formed in the process chamber 100 for introducing and discharging the substrate 10 into the process space S1.

그리고 상기 챔버본체(110)는, 공정조건에 따라서 다양한 구조를 가질 수 있으며, The chamber body 110 may have various structures depending on processing conditions,

상기 상부리드(120)는, 챔버본체(110)의 개구를 복개하여 챔버본체(110)와 함께 밀폐된 처리공간(S1)을 형성하는 구성으로서 다양한 구성이 가능하다.The upper lead 120 may have a variety of configurations, such as a structure in which an opening of the chamber main body 110 is covered to form a sealed processing space S1 together with the chamber main body 110. [

일예로서, 상기 상부리드(120)는, 절연부재(121)가 개재되어 후술하는 샤워헤드조립체(130)가 관통되어 설치될 수 있도록 중앙부에 개구가 형성되는 등 다양한 구성이 가능하다.For example, the upper lead 120 may have a variety of configurations, such as an opening formed at a central portion of the upper lead 120 to allow the showerhead assembly 130, which will be described later, to be installed with the insulating member 121 interposed therebetween.

상기 기판지지부(150)는, 공정챔버(100) 내 처리공간(S1)의 하측에 설치되어 기판(10)을 지지하는 구성으로서 다양한 구성이 가능하다.The substrate supporter 150 may be installed under the processing space S1 in the process chamber 100 to support the substrate 10 and may have various configurations.

예로서, 상기 기판지지부(150)는, 도 1에 도시된 바와 같이, 게이트(111)를 통한 기판(10)의 도입 및 배출을 위하여 상하이동이 가능하도록 설치될 수 있다.For example, the substrate support 150 may be installed to be movable up and down for the introduction and ejection of the substrate 10 through the gate 111, as shown in FIG.

그리고 상기 기판지지부(150)는, 기판(10)을 가열하거나, 냉각하는 등 온도제어를 위하여 히터 등 온도제어부재가 추가로 설치될 수 있다.The substrate support 150 may further include a temperature control member such as a heater for temperature control, such as heating or cooling the substrate 10. [

한편 상기 공정챔버(100)는, 기판처리공정의 종류, 공정조건에 따라서 RF전원인가, 접지 등 전원이 인가될 수 있으며, 처리공간(S1)의 압력제어 및 배기를 위하여 진공펌프(미도시)와 연결되는 배기관(140)이 연결될 수 있다.Meanwhile, power may be applied to the process chamber 100, for example, RF power supply or grounding depending on the type of substrate processing process and process conditions. A vacuum pump (not shown) may be used to control the pressure in the process space S1, An exhaust pipe 140 connected to the exhaust pipe 140 may be connected.

상기 샤워헤드조립체(130)는, 기판지지부(150)의 상부에 설치되어 공정수행을 위한 가스를 분사하는 구성으로서 다양한 구성이 가능하다.The showerhead assembly 130 may be installed at an upper portion of the substrate supporting part 150 to inject gas for performing a process.

예로서, 상기 샤워헤드조립체(130)는, 중심(C)에 가스도입구(133)가 형성되는 탑플레이트(132)와; 탑플레이트(132)의 하부에 설치되어 처리공간(S1)으로 가스를 분사하기 위한 다수의 분사구(131a)들이 형성된 분사플레이트(131)를 포함할 수 있다.By way of example, the showerhead assembly 130 includes a top plate 132 having a gas inlet 133 at a center C; And an injection plate 131 provided at a lower portion of the top plate 132 and having a plurality of injection openings 131a for injecting gas into the process space S1.

상기 탑플레이트(132)는, 중심(C)에 가스도입구(133)가 형성되는 구성으로서 다양한 구성이 가능하다.The top plate 132 may have a variety of constructions in which the gas inlet 133 is formed at the center C thereof.

예로서, 상기 탑플레이트(132)는, 후술하는 분사플레이트(131)의 상부에 분사플레이트(131)와 간격을 두고 설치되어 확산공간(S2)를 형성하며 중심(C)에서 가스공급관(190)과 연결되는 가스도입구(133)가 형성되는 구성으로서 다양한 구성이 가능하다.The top plate 132 is disposed at an upper portion of the spray plate 131 to be spaced apart from the spray plate 131 to form a diffusion space S2 and a gas supply pipe 190 at a center C, And a gas inlet 133 connected to the gas inlet 133 are formed.

그리고 상기 탑플레이트(132)는, 분사플레이트(131)와 함께 확산공간(S2)을 형성하며, 기판처리의 대상인 기판(10)의 형상, 예를 들면 원형의 웨이퍼와 같은 원형 플레이트로 이루어질 수 있다.The top plate 132 forms a diffusion space S2 together with the injection plate 131 and may be formed of a circular plate such as a circular wafer in the shape of the substrate 10 to be subjected to the substrate processing .

여기서 상기 탑플레이트(132)는, 중심(C)에서 가스공급관(190)과 연결되기 위한 가스도입구(133)이 형성된다.Here, the top plate 132 is formed with a gas inlet 133 for connecting with the gas supply pipe 190 at the center C thereof.

상기 분사플레이트(131)는, 탑플레이트(132)의 하부에 설치되어 처리공간(S1)으로 가스를 분사하기 위한 다수의 분사구(131a)들이 형성되는 구성으로서 다양한 구성이 가능하다.The injection plate 131 may have a variety of configurations including a plurality of injection openings 131a for injecting gas into the process space S1 provided below the top plate 132. [

또한 상기 분사플레이트(131)는, 가스를 확산시키는 확산공간(S2)이 상부에 설치되며 확산공간(S2)에서 확산된 가스를 처리공간(S1)으로 가스를 분사하는 구성으로서 다양한 구성이 가능하다.The injection plate 131 may have a variety of configurations in which a diffusion space S2 for diffusing a gas is provided at an upper portion and a gas diffused in the diffusion space S2 is injected into the processing space S1 .

예로서, 상기 분사플레이트(131)는, 그 상부에 형성된 확산공간(S2)에서 확산된 가스를 처리공간(S1)으로 분사하기 위하여 다수의 분사구(131a)들이 형성되며 기판처리의 대상인 기판(10)의 형상, 예를 들면 원형의 웨이퍼와 같은 원형 플레이트로 이루어질 수 있다.For example, the injection plate 131 has a plurality of injection openings 131a formed therein for injecting gas diffused in the diffusion space S2 formed thereon into the process space S1, and a substrate 10 ), For example, a circular plate such as a circular wafer.

상기 확산공간(S2)은, 상부에 설치된 탑플레이트(132)와 함께 형성되어 처리공간(S1)에 분사되는 가스의 확산을 위한 공간으로서, 분사플레이트(210) 및 탑플레이트(132) 사이에 미리 설정된 간격에 의하여 형성될 수 있다.The diffusion space S2 is formed together with the top plate 132 disposed at the upper part and is a space for diffusion of the gas to be injected into the processing space S1 and is provided in advance between the injection plate 210 and the top plate 132 And can be formed by a set interval.

상기 다수의 분사구(131a)들은, 공정수행을 위한 가스를 처리공간(S1)에 가스를 분사하도록 분사플레이트(210)에 형성되는 구성으로서 공정조건에 따라서 다양한 구조 및 패턴으로 형성될 수 있다.The plurality of injection openings 131a are formed in the injection plate 210 so as to inject gas into the processing space S1 for performing the process, and may be formed in various structures and patterns according to process conditions.

구체적으로, 상기 다수의 분사구(131a)들은, 그 직경, 분포, 수직구조 등 다양한 구조를 가질 수 있다.Specifically, the plurality of ejection openings 131a may have various structures such as a diameter, a distribution, and a vertical structure.

한편 앞서 설명한 바와 같이, 상기 탑플레이트(132)에 형성된 가스도입구(133)를 통해 확산공간(S2)으로 유입된 가스가 분사플레이트(131) 상면에 충돌하여 와류가 형성되는 균일한 기판처리가 불가능해지는 문제점이 있다.As described above, uniform substrate processing in which the gas introduced into the diffusion space S2 through the gas inlet 133 formed in the top plate 132 collides with the upper surface of the injection plate 131 and vortexes are formed There is a problem that becomes impossible.

이에, 본 발명에 따른 샤워헤드조립체(130)는, 탑플레이트(132) 하부면의 가스도입구(133) 주변에 가스도입구(133)를 통해 유입된 가스가 분사플레이트(131) 상면에 충돌하여 와류가 형성되는 것을 방지하는 와류형성방지부가 구비됨을 특징으로 한다.The showerhead assembly 130 according to the present invention is configured such that the gas introduced through the gas inlet 133 in the vicinity of the gas inlet 133 on the lower surface of the top plate 132 collides with the upper surface of the injection plate 131 Thereby preventing vortices from being formed.

상기 와류형성방지부는, 확산공간(S2)에서의 가스의 와류의 형성을 최소화하기 위하여, 확산공간(S2)이 가스공급관(190)이 중심(C)을 가로지는 횡단면이 중심(C)으로부터 외곽으로 가면서 감소 후 다시 증가하도록 형성되어 구현될 수 있다.The vortex formation prevention section is formed such that the diffusion space S2 is formed such that the cross section of the gas supply pipe 190 crossing the center C extends from the center C to the outer periphery And then increases and then increases again.

그리고 상기 와류형성방지부는, 확산공간(S2) 중 가스공급관(190)이 중심(C)을 가로지는 횡단면이 중심(C)으로부터 외곽으로 가면서 감소 후 다시 증가하는 영역으로서 다양한 구조에 의하여 형성될 수 있다.The vortex formation preventing portion may be formed by various structures as a region where the cross section of the gas supply pipe 190 across the center C of the diffusion space S2 increases from the center C toward the outer periphery and then increases again have.

예로서, 상기 와류형성방지부는, 확산공간(S2)의 형성을 위하여, 도 1 내지 도 3에 도시된 바와 같이, 가스도입구(133)를 중심(C)으로 하여 원주방향으로 볼록하게 형성된 볼록면부(134)를 포함할 수 있다. 여기서 상기 분사플레이트(131)의 상면은, 평평하게 형성될 수 있다.For example, as shown in FIGS. 1 to 3, the vortex formation preventing portion may be formed in the shape of a convex (concave) convexly circumferentially formed at the center C of the gas inlet 133, And may include a surface portion 134. Here, the upper surface of the jetting plate 131 may be flat.

상기 볼록면부(134)는, 가스도입구(133)를 중심(C)으로 하여 원주방향으로 볼록하게 형성되는 구성으로서 다양한 구성이 가능하다.The convex surface portion 134 is configured to be convex in the circumferential direction with the gas inlet 133 at the center C, and various configurations are possible.

예로서, 상기 볼록면부(134)는, 분사플레이트(131)의 상면과 대향되는 탑플레이트(132)의 저면에서 중심(C)을 기준으로 원주방향을 따라서 하측으로 볼록하게 형성된 부분으로서 실험 등을 통하여 최적화된 기하학적 조건을 가질 수 있다.For example, the convex surface portion 134 is formed as a convex portion downward along the circumferential direction with respect to the center C on the bottom surface of the top plate 132 opposed to the top surface of the injection plate 131, Lt; RTI ID = 0.0 > geometric < / RTI > conditions.

보다 구체적인 예로서, 상기 볼록면부(134)는, 도 2 및 도 3에 도시된 바와 같이, 가스도입구(133)의 중심을 가로지른 수직단면의 저면 형상이 볼록면부(134)의 최하점(138)을 기준으로 가스도입구(133)로부터 볼록면부(134)의 최하점(138)까지 하향 경사지며, 볼록면부(134)의 최하점(138)으로부터 탑플레이트(132) 외측을 향해 상향 경사지는 곡선을 이룰 수 있다.2 and 3, the bottom surface shape of the vertical section crossing the center of the gas inlet 133 is the lowest point 138 of the convex surface portion 134 A curve inclining downward from the gas inlet 133 to the lowermost point 138 of the convex surface portion 134 and inclining upward from the lowermost point 138 of the convex surface portion 134 toward the outside of the top plate 132 Can be achieved.

그리고 상기 볼록면부(134)를 이루는 곡선은, 타원의 일부형상, 즉, 타원의 중심을 가로지르는 중심선에 의해 구획되는 반면보다 작은 부분에 대응되는 타원의 일부형상을 가질 수 있다.The curved line forming the convex surface 134 may have a shape of a part of an ellipse, that is, a part of an ellipse corresponding to a smaller part while being divided by a center line crossing the center of the ellipse.

한편 상기 탑플레이트(132)는, 볼록면부(134)를 제외한 나머지 부분, 분사플레이트(131)의 상면과 평행을 이루어 형성될 수 있다.Meanwhile, the top plate 132 may be formed parallel to the upper surface of the ejection plate 131, except for the convex surface 134.

그리고 상기 볼록면부(134)는, 가스흐름의 왜곡을 최소화하기 위하여 시작부분(Pi)인 가스도입구(133)와 연결되는 부분 및 끝부분(Pe)에서 탑플레이트(132)의 저면의 나머지 부분과 연결되는 부분이 완만한 곡선으로 형성됨이 바람직하다.The convex surface portion 134 has a portion connected to the gas inlet 133 as a starting portion Pi to minimize the distortion of the gas flow and a portion connected to the gas port 133 as the rest portion of the bottom surface of the top plate 132 Is formed in a gentle curved line.

구체적으로, 도 3에 도시된 바와 같이, 상기 시작부분(Pi)은, 볼록한 곡선으로 형성되며, 끝부분(Pe)은 오목한 곡선으로 형성될 수 있다.Specifically, as shown in FIG. 3, the starting portion Pi may be formed as a convex curve, and the end portion Pe may be formed as a concave curve.

도 4는, 종래의 샤워헤드조립체에서의 가스흐름의 시뮬레이션을 보여주는 도면으로서, 와류형성방지부를 구비하지 않은 상태의 시뮬레이션 도면이며, 도 5는, 본 발명에 따른 샤워헤드조립체에서 와류형성방지부를 구비한 경우 가스흐름의 시뮬레이션을 보여주는 도면이다.FIG. 4 is a simulation view showing a simulation of a gas flow in a conventional showerhead assembly without a vortex formation preventing portion, and FIG. 5 is a view showing a state where the vortex formation preventing portion is provided in the shower head assembly according to the present invention 1 is a diagram showing a simulation of gas flow.

도 4 및 도 5에 도시된 바와 같이, 본 발명과 같이 확산영역(S2)에 와류형성방지부의 형성, 즉 탑플레이트(132)에 볼록면부(134)가 형성된 경우 확산영역(S2)에서 가스흐름의 와류가 현저히 감소됨을 알 수 있다. 4 and 5, when the formation of the vortex formation prevention portion in the diffusion region S2, that is, the convex surface portion 134 is formed in the top plate 132 as in the present invention, The vorticity of the vortex is remarkably reduced.

한편 상기와 같은 최적조건을 위하여, 상기 가스도입구(133)의 중심(C)으로부터 기판지지부(150)에 지지된 기판(10)의 가장자리(Wr)까지의 (수평)거리를 1이라 할 때, 중심(C)으로부터 볼록면부(134)의 끝단의 위치는, 0.24~0.27에 위치(수평거리)되는 것이 바람직하며, 0.26인 것이 보다 바람직하다.On the other hand, when the distance (horizontal) from the center C of the gas inlet 133 to the edge Wr of the substrate 10 supported by the substrate support 150 is 1 , And the position of the end of the convex surface portion 134 from the center C is preferably 0.24 to 0.27 (horizontal distance), more preferably 0.26.

또한 상기 가스도입구(133)의 중심(C)으로부터 기판지지부(150)에 지지된 기판(10)의 가장자리(Wr)까지의 (수평)거리를 1이라 할 때, 가스도입구(133)의 중심(C)으로부터 볼록면부(134)의 최하점(138)의 위치는, 중심(C)으로부터 0.098~0.15에 위치(수평거리)되는 것이 바람직하며, 0.11이 보다 바람직하다.And the distance from the center C of the gas inlet 133 to the edge Wr of the substrate 10 supported by the substrate support 150 is 1, The position of the lowermost point 138 of the convex surface portion 134 from the center C is preferably positioned at 0.098 to 0.15 (horizontal distance) from the center C, and more preferably 0.11.

이상은 본 발명에 의해 구현될 수 있는 바람직한 실시예의 일부에 관하여 설명한 것에 불과하므로, 주지된 바와 같이 본 발명의 범위는 위의 실시예에 한정되어 해석되어서는 안 될 것이며, 위에서 설명된 본 발명의 기술적 사상과 그 근본을 함께하는 기술적 사상은 모두 본 발명의 범위에 포함된다고 할 것이다.It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention as defined in the appended claims. It is to be understood that both the technical idea and the technical spirit of the invention are included in the scope of the present invention.

100 : 공정챔버 190 : 기판지지부
130 : 샤워헤드조립체 S2 : 확산공간100: process chamber 190: substrate support
130: showerhead assembly S2: diffusion space

Claims (7)

기판처리를 위한 처리공간(S1)을 형성하는 공정챔버(100)와;
상기 공정챔버(100)에 설치되어 기판(10)을 지지하는 기판지지부(190)와;
상기 기판지지부(150)의 상부에 설치되어 공정수행을 위한 가스를 분사하는 샤워헤드조립체(130)를 포함하는 기판처리장치의 샤워헤드조립체로서,
상기 샤워헤드조립체(130)는,
중심(C)에 가스도입구(133)가 형성되는 탑플레이트(132)와;
상기 탑플레이트(132)의 하부에 설치되어 상기 처리공간(S1)으로 가스를 분사하기 위한 다수의 분사구(131a)들이 형성된 분사플레이트(131)를 포함하며,
상기 탑플레이트(132) 및 상기 분사플레이트(131) 사이에는, 가스가 확산되는 확산공간(S2)이 형성되며,
상기 탑플레이트(132) 하부면의 상기 가스도입구(133) 주변에는, 상기 가스도입구(133)를 통해 유입된 가스가 상기 분사플레이트(131) 상면에 충돌하여 와류가 형성되는 것을 방지하는 와류형성방지부가 구비되는 것을 특징으로 하는 샤워헤드조립체.A process chamber (100) forming a process space (S1) for substrate processing;
A substrate support 190 installed in the process chamber 100 to support the substrate 10;
And a showerhead assembly (130) installed at an upper portion of the substrate support (150) for spraying gas for performing a process, the showerhead assembly comprising:
The showerhead assembly (130)
A top plate 132 in which a gas inlet 133 is formed at a center C;
And an injection plate 131 installed at a lower portion of the top plate 132 and having a plurality of injection openings 131a for injecting gas into the process space S1,
Between the top plate 132 and the spray plate 131, a diffusion space S2 through which gas is diffused is formed,
Around the gas inlet 133 of the lower surface of the top plate 132 is formed a vortex flow preventing the gas introduced through the gas inlet 133 from colliding with the upper surface of the spray plate 131, Wherein the shower head is provided with an anti-formation portion. 청구항 1에 있어서,
상기 와류형성방지부는, 상기 가스도입구(133)를 중심으로 하여 원주방향으로 볼록하게 형성된 볼록면부(134)를 포함하는 것을 특징으로 하는 기판처리장치의 샤워헤드조립체.The method according to claim 1,
Wherein the vortex formation preventing portion includes a convex surface portion (134) formed to be convex in a circumferential direction about the gas inlet (133). 청구항 2에 있어서,
상기 볼록면부(134)는, 상기 가스도입구(133)의 중심을 가로지른 수직단면의 저면 형상이 상기 볼록면부(134)의 최하점(138)을 기준으로 상기 가스도입구(133)로부터 상기 볼록면부(134)의 상기 최하점(138)까지 하향 경사지며, 상기 볼록면부(134)의 상기 최하점(138)으로부터 상기 탑플레이트(132) 외측을 향해 상향 경사지는 곡선을 이루는 것을 특징으로 하는 샤워헤드조립체.The method of claim 2,
The bottom surface shape of the vertical section crossing the center of the gas inlet opening 133 is formed in the convex surface portion 134 from the gas inlet 133 to the convex surface 134 with respect to the lowermost point 138 of the convex surface portion 134. [ Is inclined downward to the lowest point (138) of the surface portion (134) and forms a curve inclining upward from the lowest point (138) of the convex surface portion (134) toward the outside of the top plate (132) . 청구항 3에 있어서,
상기 볼록면부(134)는, 상기 가스도입구(133)의 중심을 가로지른 수직단면의 저면 형상이 타원 중 일부의 형상인 것을 특징으로 하는 샤워헤드조립체.The method of claim 3,
Wherein the convex surface portion (134) has a bottom surface shape of a vertical section crossing the center of the gas guide opening (133) is a shape of a part of an ellipse. 청구항 3에 있어서,
상기 가스도입구(133)의 중심(C)으로부터 상기 기판지지부(150)에 지지된 기판(10)의 가장자리(Wr)까지의 거리를 1이라 할 때,
상기 가스도입구(133)의 중심(C)으로부터 상기 볼록면부(134)의 외측 끝단의 위치는, 상기 기판(10)의 가장자리(Wr)까지의 거리의 0.24~0.27에 위치하는 것을 특징으로 하는 기판처리장치의 샤워헤드조립체.The method of claim 3,
When the distance from the center C of the gas inlet 133 to the edge Wr of the substrate 10 supported by the substrate support 150 is 1,
The position of the outer end of the convex portion 134 from the center C of the gas inlet 133 is located at 0.24 to 0.27 of the distance to the edge Wr of the substrate 10. [ A showerhead assembly of a substrate processing apparatus. 청구항 3에 있어서,
상기 가스도입구(133)의 중심(C)으로부터 상기 기판지지부(150)에 지지된 기판(10)의 가장자리(Wr)까지의 거리를 1이라 할 때,
상기 가스도입구(133)의 중심(C)으로부터 상기 볼록면부(134)의 최하점(138)의 위치는, 상기 기판(10)의 가장자리(Wr)까지의 거리의 0.098~0.15에 위치하는 것을 특징으로 하는 기판처리장치의 샤워헤드조립체.The method of claim 3,
When the distance from the center C of the gas inlet 133 to the edge Wr of the substrate 10 supported by the substrate support 150 is 1,
The position of the lowermost point 138 of the convex surface portion 134 from the center C of the gas inlet 133 is located at 0.098 to 0.15 of the distance to the edge Wr of the substrate 10 Wherein the showerhead assembly comprises: 기판처리를 위한 처리공간(S1)을 형성하는 공정챔버(100)와;
상기 공정챔버(100)에 설치되어 기판(10)을 지지하는 기판지지부(190)와;
상기 기판지지부(150)의 상부에 설치되어 공정수행을 위한 가스를 분사하는 샤워헤드조립체(130)로서 청구항 1 내지 청구항 6 중 어느 하나의 항에 따른 샤워헤드조립체(130)를 포함하는 기판처리장치.A process chamber (100) forming a process space (S1) for substrate processing;
A substrate support 190 installed in the process chamber 100 to support the substrate 10;
A substrate processing apparatus comprising a showerhead assembly (130) according to any one of claims 1 to 6 as a showerhead assembly (130) installed on an upper portion of the substrate support (150) .
KR1020160166160A 2016-12-07 2016-12-07 Showerhead and substrate processing apparatus having the same KR102193666B1 (en)

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Publication number Priority date Publication date Assignee Title
CN110211900A (en) * 2019-05-31 2019-09-06 昆山国显光电有限公司 A kind of sky plate and dry etching equipment

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Publication number Priority date Publication date Assignee Title
KR20080111334A (en) * 2007-06-18 2008-12-23 권태균 Chemical vapor deposition apparatus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080111334A (en) * 2007-06-18 2008-12-23 권태균 Chemical vapor deposition apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110211900A (en) * 2019-05-31 2019-09-06 昆山国显光电有限公司 A kind of sky plate and dry etching equipment

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