KR20080111334A - Chemical vapor deposition apparatus - Google Patents

Abstract

The object of the invention is intended to provide the chemical vapor deposition system in which the production efficiency is improved by the quality of the wafer deposition film. A chemical vapor deposition system comprises a processing chamber(10) in which the space made into one body is formed in the inner side; a gas supply route(35) located in the center of upper part of the space; a shower head(50) which it guides so that the gas flowed in through the gas supply route be uniformly diffused; an insulation block(16) in which 2 or more operating holes are formed; and a stage(60) where the wafer(W) is puts on the upper side.

Description

Chemical Vapor Deposition Equipment

1 is a cross-sectional view of the chemical vapor deposition equipment according to an embodiment of the present invention.

Figure 2 is a perspective view of the RF feeding device of the chemical vapor deposition apparatus according to an embodiment of the present invention.

Figure 3 is a front view showing the RF feeding device of the chemical vapor deposition apparatus according to an embodiment of the present invention.

Figure 4 is an illustration showing that the process gas is ejected through the baffle of the chemical vapor deposition equipment according to an embodiment of the present invention.

Figure 5 is a partial cutaway perspective view showing a baffle of chemical vapor deposition equipment according to an embodiment of the present invention.

Figure 6 is a cross-sectional view showing a baffle of chemical vapor deposition apparatus according to an embodiment of the present invention.

Figure 7 is an exemplary process gas flow showing that the process gas is moved through the shower head and the stage of the chemical vapor deposition apparatus according to an embodiment of the present invention.

Figure 8 is a plan view showing a shower head of the chemical vapor deposition apparatus according to an embodiment of the present invention.

Figure 9 is a perspective view showing a lower chamber of the chemical vapor deposition apparatus according to an embodiment of the present invention.

Figure 10 is a cross-sectional view showing the flow of the process gas through the pumping plate assembly of the chemical vapor deposition equipment according to an embodiment of the present invention.

Figure 11 is an exploded perspective view showing an exemplary process of moving the process gas through the pumping plate assembly of the chemical vapor deposition apparatus according to an embodiment of the present invention.

12 is an exploded perspective view showing the pumping plate assembly of the chemical vapor deposition apparatus according to an embodiment of the present invention.

<Explanation of symbols for the main parts of the drawings>

10: process chamber 12: lower chamber

14: upper chamber 16: insulating block

20: RF power source 25: RF feeder

28: cooling line 30: remote plasma device

32: connector 35: gas supply passage

40: baffle 48: gas ejection hole

50: shower head 51: main distribution hole

55: auxiliary distribution plate 60: stage

70: pumping plate assembly 71: pumping plate

76: first through hole 77: second through hole

78: third through hole 79: fourth through hole

80: discharge port W: wiper

The present invention relates to a chemical vapor deposition equipment, and more particularly to a chemical vapor deposition equipment with improved production efficiency.

In general, thin film deposition is divided into physical vapor deposition (PVD) and chemical vapor deposition (CVD) methods. Chemical vapor deposition is commonly used because of its excellent deposition characteristics such as uniformity, step coverage, and mass productivity.

The expanded vapor deposition method may be divided into low pressure chemical vapor deposition (LPCVD), atmospheric pressure chemical vapor deposition (APCVD), low temperature chemical vapor deposition (LTCVD), plasma enhanced chemical vapor deposition (PECVD), and the like.

On the other hand, chemical vapor deposition equipment is a device for manufacturing a semiconductor, etc. by using the chemical vapor deposition method, to supply a process gas into the process chamber to form a thin deposition film on the wafer through a gas phase chemical reaction, such chemical vapor The deposition process using the deposition equipment is as follows.

First, in a state where a wafer is provided inside the process chamber, process gases such as source gas and reaction gas are introduced into the process chamber.

In addition, a plasma is generated in the process chamber using high frequency (Radio frequency) power supplied from an RF power source, and a dielectric film is formed by depositing on the wafer while causing a chemical reaction as the process gas passes through the plasma. Will be.

After the deposition process is completed, the process gas in the process chamber is discharged through the exhaust port by the exhaust system in communication with the process chamber, and the wafer which has been deposited is transferred to the outside of the process chamber, and a new wafer is inside the process chamber. The deposition process as described above is repeated.

In this case, in order to increase process efficiency, a plurality of wafers may be accommodated in one process chamber and a deposition process may be performed. In this case, a separation wall may be installed inside the process chamber to accommodate wafers in separate spaces. . Therefore, since the gas supply line and the exhaust line, etc. must be provided separately in each of the isolated spaces, there is a problem in that the equipment cost is increased and the economic efficiency is reduced.

Meanwhile, the separation wall provided in the process chamber is removed to accommodate a plurality of wafers in one process chamber, and a single gas supply line and an exhaust line are installed, but the gas communicated to one side of the process chamber. Since the process gas supplied from the supply line is not uniformly distributed in the chamber, the process gas cannot be uniformly deposited on the wafer, thereby degrading the quality of the wafer deposition film.

In order to solve the above problems, an object of the present invention is to provide a chemical vapor deposition equipment with improved production efficiency.

In order to achieve the above object, a preferred embodiment according to the present invention is a process chamber formed with a space formed inside; A gas supply passage formed through the inside of the connector provided on the upper side of the process chamber to communicate with the inner space of the process chamber, the gas supply passage being located at an upper center portion of the space; A shower head provided at an inner upper portion of the process chamber to guide the gas flowing through the gas supply path to be uniformly spread; An insulating block provided below the shower head and having at least two operation holes formed therein; And it is provided to move in the vertical direction through each of the operation hole, and provides a chemical vapor deposition apparatus comprising a stage on which the wafer is placed on the upper surface.

Hereinafter, with reference to the accompanying drawings, preferred embodiments of the present invention that can specifically realize the above object will be described.

1 is a cross-sectional view of a chemical vapor deposition apparatus according to an embodiment of the present invention.

As shown in FIG. 1, the chemical vapor deposition apparatus includes a process chamber 10, an RF power source 20, a remote plasma apparatus 30, a baffle 40, a showerhead 50, a stage 60, and a pumping plate. It is preferable to include the assembly 70. Here, a connector 32 is provided above the process chamber 10 having a space formed therein, and a gas supply passage 35 is formed inside the connector 32 to form an inside of the process chamber 10. Communicate with space.

In addition, the process gas supplied through the gas supply passage 35 is discharged through the baffle 40 provided at the end of the gas supply passage 35 to be uniform in the upper portion of the inner space of the process chamber 10. The process gas discharged in this way is provided above the stage 60 and passes through the shower head 50 having distribution holes 51 and 57 formed to correspond to the stage 60. The wafer 60 may be uniformly diffused and deposited on the wafer W provided in the stage 60.

In addition, the vacuum pressure provided by the pump 85 connected to the process chamber 10 is lowered in the process chamber 10 by the pumping plate assembly 70 provided below the inner space of the process chamber 10. By being evenly applied to the inner space, the process gas distributed from the baffle 40 can be uniformly moved downward, and through this, the deposition film can be more uniformly formed on the wafer (W).

In detail, the process chamber 10 preferably includes a lower chamber 12 and an upper chamber 14.

Here, the lower chamber 12 has a space formed inside, the upper side is formed to be open, the upper chamber 14 is formed in the inner space so as to correspond to the lower chamber 12, the lower side is opened Is formed. In addition, the upper side of the lower chamber 12 and the lower side of the upper chamber 14 are joined by a coupling member such as a bolt, thereby forming a space inside the process chamber 10. In addition, the process chamber 10 is preferably grounded.

On the other hand, the upper side of the upper chamber 14 is preferably provided with a connector 32, in particular, the connector 32 is preferably provided in the central portion of the upper chamber (14).

In addition, an outer side of the connector 32 is connected to an RF power source 20 for generating RF (radio frequency) power, and an RF feeding device 25 having the other side connected to the connector 32 is provided. desirable.

In addition, the connector 32 is preferably formed through the upper end and the lower end of the connector 32, the gas supply passage 35 is formed, the lower end of the gas supply passage 35, the inner side of the upper chamber 14 Preferably, the upper end of the gas supply passage 35 is connected to the remote plasma apparatus 30.

Here, the remote plasma apparatus 30 is provided to be in communication with the gas supply passage 35, the process gas used for the deposition process through the gas supply passage 35, and the process chamber 10 is made of the deposition process It is possible to selectively supply a cleaning gas for cleaning the inside of the).

Meanwhile, a shower head 50 is provided inside the upper chamber 14, and a lower end portion of the connector 32 is connected to an upper portion of the shower head 50, so that the gas supply passage 35 is a shower head ( In communication with the inner diffusion space 54 of the 50.

Through this, the RF power generated from the RF power source 20 can be supplied to the shower head 50 through the RF feeding device 25 and the connector 32. As such, the RF power is supplied, and the showerhead 50 may form an equipotential surface.

Here, the shower head 50 is preferably made of a frame formed with a diffusion space 54 in communication with the gas supply passage 35, the shower head 50 is connected to the RF power source 20 In order to function as a cathode electrode, plasma can be generated between the stages 60 which are grounded in the inner space of the process chamber 10 and face each other.

In addition, a connection hole 52 corresponding to the gas supply path 35 is formed in the upper portion of the shower head 50 so as to communicate with the gas supply path 35 so that the gas supply path 35 is diffused. In communication with the space 54.

On the other hand, the RF power source 20 is preferably made of not only the RF power source for generating RF power, but also including a gas box in which the process gas is stored, as described above, the individual equipment such as the RF power source and the gas box is Since it can be made integrally like the power source 20, the equipment cost can be reduced, and the volume of the equipment can be reduced, so that the chemical vapor deposition equipment can be installed even in a relatively narrow space. Here, the process gas may include Si ₃ N ₄ and SiO ₃ , and the like.

In addition, the gas box is preferably connected to the gas supply path 35, through which the process gas supplied from the gas box flows into the diffusion space 54 through the gas supply path 35.

In this case, an end of the gas supply passage 35 is preferably provided with a baffle 40. The baffle 40 has a process gas introduced through the gas supply passage 35 in the diffusion space 54. Eject to distribute evenly. To this end, the baffle 40 is preferably disposed to protrude on the diffusion space 54 inside the shower head (50).

Here, the bottom surface of the baffle 40 is hermetically sealed, and as will be described later with reference to FIGS. 4 to 7, gas sidewalls disposed radially at predetermined angles along the circumferential direction are horizontally disposed on the sidewalls thereof. It is preferable to form a predetermined angle upward with respect to the gas discharged therethrough to uniformly diffuse into the entire area inside the showerhead.

The gas discharged in this way passes downward through the main distribution hole 51 formed in the lower portion of the shower head 50.

At this time, the sub-distribution plate 55 may be further provided in the horizontal direction of the shower head 50 at an approximately center portion of the diffusion head 54 inside the shower head 50, and the sub-distribution plate 55 may have a plurality. Auxiliary distribution holes 57 are formed.

Therefore, the process gas ejected through the baffle 40 may be more uniformly moved while passing through the auxiliary distribution hole 57 and the main distribution hole 51.

In addition, the process gas moved downward through the shower head 50 is decomposed by the high energy of the plasma, and is deposited on the wafer W provided under the shower head 50 to form a film.

In detail, the lower chamber 12 is installed such that the stage 60 on which the wafer W is placed is moved through the lower portion of the lower chamber 12 in the vertical direction, and the stage 60 is the wafer W during the process. It is preferable that the heater is built in so that heat can be supplied to keep the temperature at a proper temperature. Here, the stage 60 may be provided to be grounded to function as a ground electrode, and when RF power is supplied to the shower head 50, between the top surface of the stage 60 opposite to the bottom surface of the shower head 50. The process gas is plasmalated.

An insulating block 16 is formed on the lower chamber 12 so as to correspond to the upper shape of the stage 60 so that the upper portion of the stage 60 may be positioned inside the insulating block 16. ) Is provided.

Here, the insulating block 16 is preferably made of an insulating material so that the plasma is concentrated to face the upper portion of the stage 60, in particular, it is preferably made of a ceramic material.

On the other hand, it is preferable that at least two or more stages 60 are provided. In this case, the operation holes 17 are preferably formed in a number corresponding to a position corresponding to the stage 60.

In addition, the stage 60 is formed in a disk shape so as to correspond to the wafer W so that the wafer W can be placed on the upper surface, and the operation hole 17 is slightly larger than the upper outer diameter of the stage 60. Preferably formed.

Through this, the upper part of each stage 60 is not in contact with the inner circumferential surface of the corresponding operation hole 17 can be smoothly moved in the vertical direction, through which the interference phenomenon can be minimized during the process have.

In addition, the stage 60 is provided so as to be located inside the corresponding operation hole 17, so that the appropriate division of the inner space of the lower chamber 12 can be made, the shower head ( Since the process gas is moved by forming a path through which the process gas passing through 50 is introduced into the lower chamber 12 through the upper part of each stage 60, the process gas is moved in the entire inner space of the process chamber 10. Uniform process gas flow is possible.

On the other hand, the discharge port 80 is formed in the lower center of the lower chamber 12, it is preferable that the pump 85 is connected to the discharge port (80).

In addition, the vacuum pressure provided by the pump 85 is applied to the inner space of the process chamber 10 through the discharge port 80, and thus, the process chamber 10 through the baffle 40 Process gas introduced into the inside of the to move toward the discharge port (80).

At this time, the process gas passing through the shower head 50 is prevented from shifting in the direction of the discharge port 80 when moving to the lower side to enable the uniform movement of the process gas in the process chamber 10 and In this way, the pumping plate assembly 70 is preferably provided at an inner lower portion of the lower chamber 12 so that uniform deposition is performed on the wafer W.

Here, the pumping plate assembly 70 includes a plurality of pumping plates 71, but a plurality of pumping plates 71 are stacked in the vertical direction.

In addition, it is preferable that through-holes (not shown) are formed in each of the pumping plates 71, and a plurality of through-holes are formed in the pumping plate 71 positioned on the upper side.

As a result, the suction force by the vacuum pressure generated by the pump 85 can be uniformly applied to the inner space of the process chamber 10, and thus the process gas that has passed through the shower head 50 It becomes possible to flow more uniformly in the inner space of the process chamber 10.

On the other hand, as the deposition process is carried out by removing the residual gas and the reaction product remaining inside the process chamber 10 to keep the inside of the process chamber 10 clean, the chemical vapor deposition can be made more efficiently The cleaning gas may be supplied to the inside of the process chamber 10 through the remote plasma apparatus 30.

Here, the remote plasma apparatus 30 is preferably made to selectively supply the cleaning gas to the inside of the process chamber 10, for example, a predetermined process such as supplying the cleaning gas after 30 deposition processes are performed. Can be supplied at intervals.

2 is a perspective view showing the RF feeding device of the chemical vapor deposition apparatus according to an embodiment of the present invention, Figure 3 is a front view showing the RF feeding device of the chemical vapor deposition equipment according to an embodiment of the present invention.

2 and 3, the RF feeding device 25 has a ring portion 26 and the ring portion 26 formed in a shape corresponding to the outer peripheral portion of the connector 32 so as to be coupled to the outer peripheral portion of the connector 32. It is preferable to include a connecting portion 27 is extended from the connection to the RF power source (23).

Here, the RF feeding device 25 is connected to the RF power supply 20 to continuously supply RF power, so that material oxidation occurs due to heat generation, and thus the resistance value of the RF feeding device 25 is caused. This increase results in poor plasma process reproducibility due to an increase in the cumulative use time of RF power.

Therefore, in order to maintain the RF feeding device 25 at a predetermined temperature, it is preferable that a cooling line 28 is provided at the outer circumferential portion of the ring portion 26.

Here, the cooling line 28 is preferably provided along the outer periphery of the ring portion 26, through which the length of the cooling line 28 provided in the RF feeding device 25 can be increased The heat dissipation of the RF feeding device 25 can be made effectively.

In addition, the outer peripheral portion of the ring portion 26 is preferably formed in a shape corresponding to the cross-sectional shape of the cooling line 28, through which the outer surface of the cooling line 28 is in contact with the outer peripheral surface of the ring portion 26 This further increases the heat dissipation of the RF feeding device 25 can be made more effective.

In addition, it is preferable that an appropriate refrigerant moves inside the cooling line 28 so that heat exchange between the RF feeding device 25 and the surrounding environment is possible, wherein the refrigerant is the RF feeding device 25. Means a material that receives the heat of the transfer to the surrounding environment, it may be made of a variety of materials such as water or air.

4 is an exemplary view showing that the process gas is ejected through the baffle of the chemical vapor deposition apparatus according to an embodiment of the present invention, Figure 5 is a portion showing a baffle of the chemical vapor deposition equipment according to an embodiment of the present invention 6 is a cross-sectional view illustrating a baffle of a chemical vapor deposition apparatus according to an embodiment of the present invention.

4 to 6, the baffle 40 preferably includes a passage portion 42, a blocking plate 46, and a gas ejection hole 48.

First, the passage part 42 communicates with the gas supply passage 35 to form a movement flow path of the process gas moving through the gas supply passage 35.

A flange 43 is formed at an upper end of the passage part 42, and the through hole 44 is formed in the flange 43 at predetermined angular intervals along the circumferential direction. In addition, the through hole 44 is preferably coupled to the shower head 50 by a fastening member such as a bolt.

The clogging plate 46 is preferably formed at the lower end of the passage part 42, and the gas ejection hole 48 is formed at a predetermined angular interval along the circumferential direction on the outer circumferential surface of the passage part 42. desirable.

Through this, the process gas introduced downward through the gas supply passage 35 and the passage part 42 impinges on the blocking plate 46 and stays inside the passage part 42, and then the gas ejection hole. Through 48, it is ejected radially and uniformly in the horizontal direction.

In particular, the baffle 40 is coupled to the gas supply passage 35 located in the horizontal center portion of the upper chamber 14, so that the process gas ejected through the baffle 40 is diffused without biasing to either side. It becomes possible to distribute | distribute evenly inside the space 54 inside.

In this case, the sum of the widths of the cross-sectional areas of the gas ejection holes 48 is preferably smaller than the cross-sectional area of the flow paths of the passages 42. In this way, the process gas introduced at a constant flow rate is formed in the passages 42. The moving speed increases while passing through each of the gas ejection holes 48 smaller than the flow path cross-sectional area, thereby making it possible to more uniformly distribute the process gas throughout the diffusion space 54.

As such, by efficiently transferring the process gas to a distance in the diffusion space 54, the pressure distribution of the process gas applied to the shower head 50 can be uniform, and the deposition film formed on the wafer W Uniformity can also be improved.

On the other hand, the gas ejection hole 48 is preferably formed through a predetermined angle range (θ) from the horizontal direction to the upper direction of the passage portion 42, in particular, the gas ejection hole 48 is horizontal It is preferable to penetrate upward in the angle range (θ) of 10 ° ~ 89 ° relative to.

Therefore, the gas ejection hole 48 satisfies when the gas ejection hole 48 is formed to penetrate upwardly in the angular range θ. Accordingly, the cross section of the gas ejection hole 48 is rounded upwardly. It may be formed in various ways as is formed is not limited to any particular shape. In addition, the cross-sectional shape of the gas ejection hole 48 in the longitudinal direction may also be formed in various shapes without being limited to a specific shape.

As such, the gas ejection hole 48 is upwardly formed such that the process gas ejected through the gas ejection hole 48 flows to the upper portion of the shower head 50.

In this case, since the showerhead 50 is preheated by the radiant heat of the stage (60 in FIG. 1), the process gas that hits the upper portion of the showerhead 50 is supplied with thermal energy, and thus the SiH ₄ gas Since decomposition may be accelerated, the content of H in the deposition film may be lowered, and thus the quality of the deposition film may be improved.

7 is an exemplary view illustrating a process gas flow showing that a process gas moves through a showerhead and a stage of a chemical vapor deposition apparatus according to an embodiment of the present invention, and FIG. 8 is a chemical vapor deposition according to an embodiment of the present invention. 9 is a plan view illustrating a showerhead of the equipment, and FIG. 9 is a perspective view illustrating the lower chamber of the chemical vapor deposition apparatus according to the exemplary embodiment of the present invention.

As shown in FIGS. 7 to 9, the process gas discharged through the baffle (40 of FIG. 4) and dispersed in the diffusion space 45 may include a plurality of auxiliary distribution holes 57 formed in the auxiliary distribution plate 55. It is uniformly moved downward through).

In addition, the process gas passing through the auxiliary distribution hole 57 moves to the upper side of the wafer W through the main distribution hole 51.

Here, the main distribution hole 51 is preferably formed in a region facing the wafer placed on the stage 60, and similarly, the auxiliary distribution hole 57 also corresponds to the region where the main distribution hole 51 is formed. It is preferable to be formed separately in the region facing.

In addition, the main distribution hole 51 is preferably formed so that the lower end portion is expanded, through which the process gas passing through the main distribution hole 51 is diffused and moved more widely.

Therefore, the process gas can be more uniformly deposited on the upper surface of the wafer (W) provided on the upper side of the stage 60 by the plasma formed on the lower side of the shower head 50, thereby, Uniformity may be improved to improve the quality of the deposited film.

On the other hand, after passing through the main distribution hole 51, the process gas that the deposition process proceeds is moved to the lower side between the upper outer side of the stage 60 and the operating hole 17.

Here, the insulating block 16 in which the operation hole 17 is formed is preferably made of an insulating material so that the plasma can be concentrated to face the stage 60. In particular, the insulating block 16 is preferably made of a ceramic material.

10 is a cross-sectional view showing the flow of the process gas through the pumping plate assembly of the chemical vapor deposition apparatus according to an embodiment of the present invention, Figure 11 is a pumping plate assembly of the chemical vapor deposition equipment according to an embodiment of the present invention An exploded perspective view showing an example of the movement of the process gas through, Figure 12 is an exploded perspective view showing a pumping plate assembly of the chemical vapor deposition equipment according to an embodiment of the present invention.

As shown in Figure 10 to 12, the pumping plate assembly 70 is preferably provided in the inner lower portion of the lower chamber 12, the different shape and number of through holes (76, 77, 78, 79) ) Is preferably made of a plurality of pumping plate 71 is formed. Here, each pumping plate 71 is preferably stacked and coupled, it is preferable that four pumping plates 71 are stacked.

In detail, each of the pumping plates 71 may include a main hole 73 having a shape corresponding to the stage 60 so that the stage 60 may be provided through the pumping plates 71. .

Here, since the main holes 73 are formed to correspond to the number of the stages 60, when the stages 60 are provided, two main holes 73 are also formed.

In addition, it is preferable that through holes are formed at a predetermined angular interval along the circumferential direction with respect to each of the main holes 73. The through holes are formed differently according to the positions where the pumping plates 71 are stacked. desirable.

First, it is preferable that the first through hole 76 is formed around the main hole 73 in the pumping plate 71 provided at the lowermost side of the pumping plates 71 stacked thereon.

Here, each of the first through holes 76 is preferably formed at the same distance from the discharge port 80, so that the first through holes 76 of 180 ° centered around the main hole (73) It is preferable that two are formed at angular intervals.

Through this, the vacuum pressure provided through the discharge port 80 can be applied to the same size through the first through hole (67).

In addition, the pumping plate 71 stacked on the second layer has a number (four) of second through holes twice as many as the number of the first through holes 76 formed in the pumping plate 71 located on the lower layer. 77) is preferably formed.

In this case, each of the second through holes 77 is preferably formed to form an angular interval of 1/2 the angle between the first through holes 76. That is, since the angle between each of the first through holes 76 is 180 °, each of the second through holes 77 is formed at an angle interval of 90 °.

In addition, each of the second through holes 77 is preferably formed to have the same angular interval on both sides with respect to each of the first through holes 76. Accordingly, each of the second through holes 77 is formed at an angular interval of 45 ° based on the first through holes 76 corresponding thereto.

According to the above-described method, the pumping plate 71 stacked on the third layer has a number (8) of twice as many as the number of the second through holes 77 formed in the pumping plate 71 located immediately below. Preferably, three through holes 78 are formed, wherein each of the third through holes 78 is formed at an angle interval of 45 °, which is 1/2 of 90 ° which is an angle between the second through holes 77. Preferably, it is preferably formed at an angular interval of 22.5 ° based on the corresponding second through-holes 77, respectively.

In addition, the pumping plate 71 stacked on the uppermost layer has a number (fourteen) of the fourth through holes 79 that are twice as many as the number of the third through holes 78 formed on the pumping plate 71 located on the lower layer. Preferably, the fourth through holes 79 are formed at an angular interval of 22.5 °, which is 1/2 of 45 ° which is an angle between the third through holes 78, respectively. The third through hole 78 is preferably formed at an angular interval of 11.25 ° each.

In addition, each of the through holes 76, 77, 78, 79 is preferably formed through a smaller through area formed in the pumping plate 71 located on the upper side.

As such, the pumping plate 71 is stacked to form a multilayer, and as the pumping plate 71 stacked from the lower side to the upper side, a larger number of through holes are formed, whereby the vacuum pressure provided through the discharge port 80 is applied to the process chamber. It can be applied uniformly to the inside of (10).

In addition, the process gas ejected through the baffle 40 is uniformly distributed in the inside of the process chamber 10 so that the process gas can be downwardly moved and the deposition on the upper surface of the wafer W can be made more uniform. do.

On the other hand, the coupling protrusion 74 is protruded on one side of the pumping plate 71 so that the stacking of each pumping plate 71 is made constant, the coupling protrusion 74 may be inserted into the other side. It is preferable that a coupling groove 75 having a shape corresponding to the coupling protrusion 74 is formed.

In addition, a plurality of connection holes 72 may be formed in the coupling protrusion 74 and the coupling groove 75, and each pumping plate 71 may be inserted through the connection hole 72. It can be fixed to the lower chamber 12 while being coupled by).

Hereinafter will be described the operation of the chemical vapor deposition equipment according to a preferred embodiment of the present invention.

Referring to the other drawings on the basis of FIG. 1, after the wafer W is placed on the upper side of each of the stages 60 provided to penetrate the lower part of the lower chamber 12 and move up and down, the lower part The upper side of the chamber 12 is combined with the lower portion of the upper chamber 14.

The process gas moved through the gas supply passage 35 under the control of the remote plasma apparatus 30 flows into the baffle 40 provided at the end of the gas supply passage 35. The baffle 40 is ejected through a plurality of the gas ejection holes 48 formed radially.

On the other hand, the shower head 50 is provided on the inner upper portion of the process chamber 10, the diffusion space 54 is formed inside the shower head 50.

Here, the baffle 40 is located in the diffusion space 54, and the process gas ejected from the gas ejection hole 48 is formed through the diffusion space 54 as the gas ejection hole 48 penetrates upward. It is ejected to the upper side of the) and move to a far distance in the diffusion space 54 can be uniformly distributed inside the diffusion space 54.

In addition, the process gas distributed in the diffusion space 54 includes a plurality of the auxiliary distribution holes 57 and the shower heads formed in the auxiliary distribution plate 55 provided at an intermediate portion of the shower head 50. Passes through the plurality of main distribution holes 51 formed in the lower portion of the 50 in order.

In this case, the auxiliary distribution hole 57 and the main distribution hole 51 are formed to be distributed to correspond to the wafer (W) placed on the upper side of the stage 60, the process gas distributed in the diffusion space 54 As it passes through the auxiliary distribution hole 57 and the main distribution hole 51 can be more uniformly moved to the upper side of the wafer (W).

On the other hand, the shower head 50 is connected to the RF power source 20 to form an electrode to generate a plasma in the inner space of the process chamber 10, thereby passing through the shower head 50 The process gas moved downward is decomposed by the high energy of the plasma and deposited on the wafer W to form a film.

Here, the stage 60 is preferably made to supply heat to maintain the wafer (W) at an appropriate temperature during the process, the shower head 50 is preheated by the radiant heat of the stage 60 Since the process gas is ejected upward through the baffle 40 and hits the upper portion of the shower head 50, heat energy is supplied, thereby facilitating decomposition of the SiH ₄ gas included in the process gas. The content of H can be lowered, so that the quality of the deposited film can be improved.

On the other hand, the vacuum pressure generated in the pump 85 through the discharge port 80 formed in the lower chamber 12 is provided inside the process chamber 10, the suction force by the vacuum pressure is the lower The pumping plate assembly 70 provided inside the chamber 12 is uniformly applied to the inside of the process chamber 10.

That is, the pumping plate assembly 70 is formed by stacking the pumping plate 71 in multiple layers. The through holes 76, 77, 78, and 79 formed in the pumping plate 71 have an upper pumping plate 71. As more and more are formed, the suction force by the vacuum pressure can be uniformly applied to the inside of the process chamber 10.

And, through this, the process gas ejected through the baffle 40 and then subjected to the deposition process is uniformly provided between the upper outer side of the stage 60 and the operation hole 17 formed in the insulating block 16. You can move.

As such, the suction force applied to the inside of the process chamber 10 by the vacuum pressure is uniformly applied to the inside of the process chamber 10 through the pumping plate assembly 70, as well as the gas supply passage 35. The process gas introduced through) is distributed to the far distance of the diffusion space 54 by the baffle 40 so that the downward movement of the process gas is uniformly distributed, and thus the deposition film on the wafer W. Formation can also be made uniform.

In addition, since the auxiliary distribution hole 57 and the main distribution hole 51 are formed in the diffusion space 54, a more uniform downward movement of the process gas can be achieved, and thus the deposition film of the wafer W is more likely to be formed. It can be formed uniformly.

On the other hand, after a predetermined deposition process is completed, the cleaning gas is supplied by the control of the remote plasma apparatus 30, and the cleaning gas removes residual gas and reaction products remaining in the process chamber 10. The inside of the process chamber 10 is cleaned cleanly.

In addition, the remote plasma apparatus 30 repeats the above-described operation by introducing a process gas into the process chamber 10.

As described above, the present invention is not limited to the above-described specific preferred embodiments, and various modifications by those skilled in the art to which the present invention pertains without departing from the gist of the present invention claimed in the claims. Implementations are possible and such variations are within the scope of the present invention.

Referring to the effect of the chemical vapor deposition apparatus according to the present invention described above are as follows.

First, since the chemical vapor deposition apparatus is provided with two or more stages in a single process chamber, two or more wafers may be accommodated and a deposition process may be performed to increase productivity.

Second, since the inner space of the process chamber having two or more stages is integrally formed without a separate partition wall, and the gas supply line and the exhaust system are also formed in a single unit, the cost of equipment can be reduced.

Third, a baffle is provided at the end of the gas supply line to uniformly distribute the process gas to the inner space of the process chamber, whereby uniform deposition is performed on each wafer accommodated in the process chamber. It is possible.

Fourth, in addition, a pumping plate assembly is provided at an inner lower portion of the process chamber, so that a vacuum pressure provided from a pump connected to the process chamber may be uniformly applied to the inside of the process chamber. Uniform movement of the process gas can be made therein.

Fifth, chemical vapor deposition may be performed more efficiently by removing residual gas and reaction products remaining inside the process chamber through a remote plasma apparatus to keep the inside of the process chamber clean.

Claims (29)

A process chamber having a space formed integrally therein; A gas supply passage formed through the inside of the connector provided on the upper side of the process chamber to communicate with the inner space of the process chamber, the gas supply passage being located at an upper center portion of the space; A shower head provided at an inner upper portion of the process chamber to guide the gas flowing through the gas supply path to be uniformly spread; An insulating block provided below the shower head and having at least two operation holes formed therein; And It is provided to move in the vertical direction through each of the operating holes, the chemical vapor deposition apparatus comprising a stage on which the wafer is placed on the upper surface. The method of claim 1, The showerhead is connected to the RF power supply, the chemical vapor deposition apparatus, characterized in that the stage is grounded. The method of claim 1, And a baffle having gas ejection holes formed at a lower end of the gas supply path to discharge the process gas moving downwards at a predetermined angle upward from a horizontal direction in a radial direction. The method of claim 3, wherein The gas blowing holes are chemical vapor deposition apparatus, characterized in that formed inclined upward with respect to the horizontal direction. The method of claim 1, The outer peripheral portion of the connector is connected to the RF power is provided with an RF feeding device for applying RF power to the shower head, the chemical vapor deposition equipment, characterized in that the cooling line is provided on the outer peripheral portion of the RF feeding device. The method of claim 1, In the lower portion of the process chamber, the vacuum pressure provided by the pump connected to the discharge port formed at the lower side of the process chamber is uniformly applied to the inside of the process chamber so that the process gas ejected from the shower head is uniformly moved downward. Chemical vapor deposition equipment, characterized in that the pumping plate assembly is provided to be. The method of claim 1, And a remote plasma apparatus on the upper side of the connector to selectively supply the cleaning gas to the inside of the process chamber in order to remove residual gas and reaction products remaining inside the process chamber. A process chamber having a space formed integrally therein; A shower head having a diffusion space in which a diffusion space communicating with the gas supply path provided at an upper portion of the process chamber is formed therein, and having a plurality of auxiliary distribution holes formed at a central portion thereof, and having a plurality of main distribution holes formed at a lower surface thereof. ; An insulating block provided below the shower head and having at least two operation holes formed therein; And It is provided to move in the vertical direction through each of the operating holes, the chemical vapor deposition apparatus comprising a stage on which the wafer is placed on the upper surface. The method of claim 8, The showerhead is connected to the RF power supply, the chemical vapor deposition apparatus, characterized in that the stage is grounded. The method of claim 8, The main distribution hole is a chemical vapor deposition apparatus, characterized in that formed in the area facing the wafer placed on the stage. The method of claim 10, The auxiliary distribution hole is a chemical vapor deposition apparatus, characterized in that formed in the portion opposite to the area where the main distribution hole is formed. The method of claim 8, The lower end of the gas supply passage is provided with a baffle having the gas ejection holes formed to be inclined upward with respect to the horizontal direction so as to discharge the gas moving downwards at a predetermined angle from the horizontal direction upwards in a radial direction. Chemical vapor deposition apparatus characterized in that. The method of claim 8, In the lower portion of the process chamber, the vacuum pressure provided by the pump connected to the discharge port formed at the lower side of the process chamber is uniformly applied to the inside of the process chamber so that the process gas ejected from the shower head is uniformly moved downward. Chemical vapor deposition equipment, characterized in that the pumping plate assembly is provided to be. A process chamber having a space formed integrally therein; A shower head configured to have a diffusion space communicating with the gas supply path provided at an upper portion of the process chamber inward to guide uniformly the gas flowing through the gas supply path; A baffle provided at a lower end of the gas supply path, the gas ejection holes having a predetermined angle interval in a circumferential direction for discharging downward gas uniformly upward from a horizontal direction; An insulating block provided below the shower head and having at least two operation holes formed therein; And It is provided to move in the vertical direction through each of the operating holes, the chemical vapor deposition apparatus comprising a stage on which the wafer is placed on the upper surface. The method of claim 14, The showerhead is connected to the RF power supply, the chemical vapor deposition apparatus, characterized in that the stage is grounded. The method of claim 14, Wherein the shower head is made of a frame having a space formed inside the baffle, the chemical vapor deposition apparatus, characterized in that a plurality of main distribution holes are formed on the lower surface. The method of claim 16, The bottom of the baffle is closed by the clogging plate, the chemical vapor deposition apparatus characterized in that the passage portion for forming the flow path of the process gas is formed inside, protruding into the inner diffusion space of the shower head. The method of claim 17, The gas ejection holes are formed in the side wall portion of the baffle, the chemical vapor deposition apparatus characterized in that the inclined upward from the horizontal direction so that the gas is discharged uniformly after hitting the upper surface of the shower head. The method of claim 18, Chemical vapor deposition apparatus, characterized in that the central portion of the inner space of the shower head is provided with a secondary distribution plate formed with a plurality of secondary distribution holes. The method of claim 14, In the lower portion of the process chamber, the vacuum pressure provided by the pump connected to the discharge port formed at the lower side of the process chamber is uniformly applied to the inside of the process chamber so that the process gas ejected from the shower head is uniformly moved downward. Chemical vapor deposition equipment, characterized in that the pumping plate assembly is provided to be. A process chamber having a space formed integrally therein; A shower head having a plurality of main distribution holes formed on a lower surface of the frame having a diffusion space communicating with the gas supply path provided at an upper portion of the process chamber; An insulating block provided below the shower head and having at least two operation holes formed therein; A stage provided to move in the vertical direction through the operation holes, and having a wafer placed on an upper surface thereof; And The process chamber so that the vacuum pressure provided by the pump connected to the discharge port formed at the lower side of the process chamber is uniformly applied to the inside of the process chamber so that the process gas ejected from the shower head can be uniformly moved downward. Chemical vapor deposition apparatus comprising a pumping plate assembly provided on the inner bottom. The method of claim 21, The showerhead is connected to the RF power supply, the chemical vapor deposition apparatus, characterized in that the stage is grounded. The method of claim 21, A baffle is provided at the lower end of the gas supply passage so as to protrude into the shower head, and the lower end of the baffle is closed by a blocking plate and a plurality of gases radially disposed at a predetermined angle along the circumferential direction on the side wall part. Chemical vapor deposition apparatus characterized in that the ejection holes are formed at a predetermined angle upward from the horizontal direction. The method of claim 21, Chemical vapor deposition apparatus characterized in that the auxiliary distribution plate is provided with a plurality of auxiliary distribution holes in the central portion of the inner space of the shower head. The method of claim 21, The pumping plate assembly may be formed by stacking a plurality of pumping plates having a main hole having a shape corresponding to the stage so that the stage may be provided therethrough. Each pumping plate may have a predetermined angular interval with respect to the main hole and Chemical vapor deposition equipment characterized in that the through-hole of the size is formed. The method of claim 25, The through holes are formed more as the pumping plate stacked on the upper side, the through holes formed in the pumping plate located on the upper side is formed by forming a double of the number of the through holes formed in the pumping plate provided immediately below Vapor deposition equipment. The method of claim 26, Chemical vapor deposition equipment, characterized in that the through-hole formed in the pumping plate located in the upper portion is formed at an angular interval of 1/2 of the angle between the through-holes formed in the pumping plate provided directly below. The method of claim 26, The through hole formed in the pumping plate located in the upper portion of the chemical vapor deposition equipment, characterized in that the same angular spacing around the through hole formed in the pumping plate located directly below. The method of claim 21, The discharge port is chemical vapor deposition equipment, characterized in that formed in the lower center of the process chamber.

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