KR20180049176A - 정전척 및 웨이퍼 처리 장치 - Google Patents

정전척 및 웨이퍼 처리 장치 Download PDF

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Publication number
KR20180049176A
KR20180049176A KR1020187011953A KR20187011953A KR20180049176A KR 20180049176 A KR20180049176 A KR 20180049176A KR 1020187011953 A KR1020187011953 A KR 1020187011953A KR 20187011953 A KR20187011953 A KR 20187011953A KR 20180049176 A KR20180049176 A KR 20180049176A
Authority
KR
South Korea
Prior art keywords
dielectric substrate
ceramic dielectric
outer periphery
electrode layer
imaginary line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020187011953A
Other languages
English (en)
Korean (ko)
Inventor
카즈키 아나다
유이치 요시이
타쿠마 와다
Original Assignee
토토 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=57143470&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR20180049176(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 토토 가부시키가이샤 filed Critical 토토 가부시키가이샤
Publication of KR20180049176A publication Critical patent/KR20180049176A/ko
Withdrawn legal-status Critical Current

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Classifications

    • H01L21/6833—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H01L21/6835—
    • H01L21/68721—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7606—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
KR1020187011953A 2015-04-21 2015-04-28 정전척 및 웨이퍼 처리 장치 Withdrawn KR20180049176A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2015-086807 2015-04-21
JP2015086807A JP6124156B2 (ja) 2015-04-21 2015-04-21 静電チャックおよびウェーハ処理装置
PCT/JP2015/062905 WO2016170694A1 (ja) 2015-04-21 2015-04-28 静電チャックおよびウェーハ処理装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020177019576A Division KR101855228B1 (ko) 2015-04-21 2015-04-28 정전척 및 웨이퍼 처리 장치

Publications (1)

Publication Number Publication Date
KR20180049176A true KR20180049176A (ko) 2018-05-10

Family

ID=57143470

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020187011953A Withdrawn KR20180049176A (ko) 2015-04-21 2015-04-28 정전척 및 웨이퍼 처리 장치
KR1020177019576A Active KR101855228B1 (ko) 2015-04-21 2015-04-28 정전척 및 웨이퍼 처리 장치

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020177019576A Active KR101855228B1 (ko) 2015-04-21 2015-04-28 정전척 및 웨이퍼 처리 장치

Country Status (6)

Country Link
US (1) US10714373B2 (https=)
JP (1) JP6124156B2 (https=)
KR (2) KR20180049176A (https=)
CN (1) CN107431038B (https=)
TW (1) TWI553774B (https=)
WO (1) WO2016170694A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11133211B2 (en) * 2018-08-22 2021-09-28 Lam Research Corporation Ceramic baseplate with channels having non-square corners
US20210159107A1 (en) * 2019-11-21 2021-05-27 Applied Materials, Inc. Edge uniformity tunability on bipolar electrostatic chuck
US11990361B2 (en) * 2020-07-31 2024-05-21 Samsung Display Co., Ltd. Electrostatic chuck, etching apparatus, and method of manufacturing display device
WO2022146667A1 (en) 2020-12-29 2022-07-07 Mattson Technology, Inc. Electrostatic chuck assembly for plasma processing apparatus
US11567417B2 (en) * 2021-01-20 2023-01-31 Applied Materials, Inc. Anti-slippery stamp landing ring
JP7623084B2 (ja) * 2021-03-08 2025-01-28 東京エレクトロン株式会社 基板支持器
JP7745434B2 (ja) * 2021-11-05 2025-09-29 日本特殊陶業株式会社 基板保持部材及び基板保持部材の製造方法
JP2024068979A (ja) * 2022-11-09 2024-05-21 日本特殊陶業株式会社 静電チャック
JP2025176267A (ja) * 2024-05-21 2025-12-04 Toto株式会社 静電チャック

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1194954B1 (en) * 1999-07-08 2011-05-18 Lam Research Corporation Electrostatic chuck and its manufacturing method
JP2004282047A (ja) * 2003-02-25 2004-10-07 Kyocera Corp 静電チャック
JP4031419B2 (ja) * 2003-09-19 2008-01-09 日本碍子株式会社 静電チャック及びその製造方法
US7646580B2 (en) 2005-02-24 2010-01-12 Kyocera Corporation Electrostatic chuck and wafer holding member and wafer treatment method
JP4796523B2 (ja) * 2006-03-24 2011-10-19 日本碍子株式会社 セラミックス焼成体の製造方法
JP5069452B2 (ja) * 2006-04-27 2012-11-07 アプライド マテリアルズ インコーポレイテッド 二重温度帯を有する静電チャックをもつ基板支持体
JP2008042140A (ja) * 2006-08-10 2008-02-21 Tokyo Electron Ltd 静電チャック装置
JP5087561B2 (ja) * 2007-02-15 2012-12-05 株式会社クリエイティブ テクノロジー 静電チャック
JP5025576B2 (ja) 2008-06-13 2012-09-12 新光電気工業株式会社 静電チャック及び基板温調固定装置
WO2010090948A1 (en) * 2009-02-04 2010-08-12 Mattson Technology, Inc. Electrostatic chuck system and process for radially tuning the temperature profile across the surface of a substrate
JP5496630B2 (ja) * 2009-12-10 2014-05-21 東京エレクトロン株式会社 静電チャック装置
JP5218865B2 (ja) * 2010-03-26 2013-06-26 Ｔｏｔｏ株式会社 静電チャック
JP5339162B2 (ja) 2011-03-30 2013-11-13 Ｔｏｔｏ株式会社 静電チャック
JP5816454B2 (ja) * 2011-05-09 2015-11-18 新光電気工業株式会社 基板温調固定装置
JP5441019B1 (ja) * 2012-08-29 2014-03-12 Ｔｏｔｏ株式会社 静電チャック
JP5441021B1 (ja) * 2012-09-12 2014-03-12 Ｔｏｔｏ株式会社 静電チャック
JP6001402B2 (ja) * 2012-09-28 2016-10-05 日本特殊陶業株式会社 静電チャック
JP5633766B2 (ja) * 2013-03-29 2014-12-03 Toto株式会社 静電チャック
JP2015088743A (ja) * 2013-09-27 2015-05-07 Toto株式会社 静電チャック

Also Published As

Publication number Publication date
US20180040499A1 (en) 2018-02-08
KR101855228B1 (ko) 2018-05-09
JP6124156B2 (ja) 2017-05-10
TWI553774B (zh) 2016-10-11
JP2016207806A (ja) 2016-12-08
TW201639070A (zh) 2016-11-01
CN107431038A (zh) 2017-12-01
CN107431038B (zh) 2021-08-10
US10714373B2 (en) 2020-07-14
KR20170095979A (ko) 2017-08-23
WO2016170694A1 (ja) 2016-10-27

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A107 Divisional application of patent
PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A18-div-PA0104

St.27 status event code: A-0-1-A10-A16-div-PA0104

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PC1203 Withdrawal of no request for examination

St.27 status event code: N-1-6-B10-B12-nap-PC1203

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000