KR20180040147A - 메모리 디바이스를 위한 금속화 프로세스 - Google Patents

메모리 디바이스를 위한 금속화 프로세스 Download PDF

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Publication number
KR20180040147A
KR20180040147A KR1020187003956A KR20187003956A KR20180040147A KR 20180040147 A KR20180040147 A KR 20180040147A KR 1020187003956 A KR1020187003956 A KR 1020187003956A KR 20187003956 A KR20187003956 A KR 20187003956A KR 20180040147 A KR20180040147 A KR 20180040147A
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KR
South Korea
Prior art keywords
metallization layer
metallization
mram
dedicated
module
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020187003956A
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English (en)
Korean (ko)
Inventor
유 루
승 혁 강
Original Assignee
퀄컴 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 퀄컴 인코포레이티드 filed Critical 퀄컴 인코포레이티드
Publication of KR20180040147A publication Critical patent/KR20180040147A/ko
Withdrawn legal-status Critical Current

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    • H01L43/12—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • H01L23/5226—
    • H01L23/528—
    • H01L43/02—
    • H01L43/08—
    • H01L43/10—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/42—Vias, e.g. via plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/43—Layouts of interconnections

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Theoretical Computer Science (AREA)
  • Geometry (AREA)
  • Evolutionary Computation (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
KR1020187003956A 2015-08-10 2016-07-11 메모리 디바이스를 위한 금속화 프로세스 Withdrawn KR20180040147A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/822,326 2015-08-10
US14/822,326 US10109674B2 (en) 2015-08-10 2015-08-10 Semiconductor metallization structure
PCT/US2016/041790 WO2017027148A1 (en) 2015-08-10 2016-07-11 Metallization process for a memory device

Publications (1)

Publication Number Publication Date
KR20180040147A true KR20180040147A (ko) 2018-04-19

Family

ID=56497906

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020187003956A Withdrawn KR20180040147A (ko) 2015-08-10 2016-07-11 메모리 디바이스를 위한 금속화 프로세스

Country Status (8)

Country Link
US (1) US10109674B2 (https=)
EP (1) EP3304610B1 (https=)
JP (1) JP2018525825A (https=)
KR (1) KR20180040147A (https=)
CN (1) CN107924994B (https=)
AU (1) AU2016306123A1 (https=)
BR (1) BR112018002617B1 (https=)
WO (1) WO2017027148A1 (https=)

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US9799562B2 (en) * 2009-08-21 2017-10-24 Micron Technology, Inc. Vias and conductive routing layers in semiconductor substrates
US10270025B2 (en) * 2015-12-31 2019-04-23 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure having magnetic tunneling junction (MTJ) layer
US10169520B2 (en) * 2016-06-30 2019-01-01 Taiwan Semiconductor Manufacturing Company, Ltd. Method of reconfiguring uncrowned standard cells and semiconductor apparatus including uncrowned and crowned cells
US9997456B2 (en) * 2016-07-27 2018-06-12 Globalfoundries Inc. Interconnect structure having power rail structure and related method
US10566519B2 (en) * 2017-08-18 2020-02-18 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming a flat bottom electrode via (BEVA) top surface for memory
US10374005B2 (en) * 2017-12-29 2019-08-06 Globalfoundries Singapore Pte. Ltd. Density-controllable dummy fill strategy for near-MRAM periphery and far-outside-MRAM logic regions for embedded MRAM technology and method for producing the same
CN110648960B (zh) * 2018-06-27 2021-12-28 中电海康集团有限公司 Mram器件与其制作方法
CN110890460B (zh) * 2018-09-07 2023-06-30 联华电子股份有限公司 半导体元件及其制作方法
US11069853B2 (en) * 2018-11-19 2021-07-20 Applied Materials, Inc. Methods for forming structures for MRAM applications
US11476415B2 (en) 2018-11-30 2022-10-18 International Business Machines Corporation Patterning magnetic tunnel junctions and the like while reducing detrimental resputtering of underlying features
CN112447788B (zh) * 2019-09-03 2023-09-12 联华电子股份有限公司 磁阻式随机存取存储器
US11424403B2 (en) 2020-02-21 2022-08-23 International Business Machines Corporation Magnetoresistive random-access memory cell having a metal line connection

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EP0817269B1 (en) * 1996-06-28 2008-09-10 Texas Instruments Incorporated Wordline layout for semiconductor memory device
US6635496B2 (en) * 2001-10-12 2003-10-21 Infineon Technologies, Ag Plate-through hard mask for MRAM devices
US6794238B2 (en) 2001-11-07 2004-09-21 Micron Technology, Inc. Process for forming metallized contacts to periphery transistors
AU2003235298A1 (en) 2002-04-23 2003-11-10 Nec Corporation Magnetic memory and its operating method
US6783995B2 (en) * 2002-04-30 2004-08-31 Micron Technology, Inc. Protective layers for MRAM devices
JP4618989B2 (ja) * 2003-02-18 2011-01-26 三菱電機株式会社 磁気記憶半導体装置
US7031183B2 (en) 2003-12-08 2006-04-18 Freescale Semiconductor, Inc. MRAM device integrated with other types of circuitry
JP2005303231A (ja) * 2004-04-16 2005-10-27 Sony Corp 磁気メモリ装置
US7635884B2 (en) * 2005-07-29 2009-12-22 International Business Machines Corporation Method and structure for forming slot via bitline for MRAM devices
JP4406407B2 (ja) * 2006-03-13 2010-01-27 株式会社東芝 磁気ランダムアクセスメモリ
US7666578B2 (en) * 2006-09-14 2010-02-23 Micron Technology, Inc. Efficient pitch multiplication process
US8395191B2 (en) * 2009-10-12 2013-03-12 Monolithic 3D Inc. Semiconductor device and structure
US8455267B2 (en) * 2009-05-14 2013-06-04 Qualcomm Incorporated Magnetic tunnel junction device and fabrication
US8674465B2 (en) 2010-08-05 2014-03-18 Qualcomm Incorporated MRAM device and integration techniques compatible with logic integration
JP2012043977A (ja) 2010-08-19 2012-03-01 Renesas Electronics Corp 半導体装置および半導体装置の製造方法
US9153981B2 (en) 2011-09-09 2015-10-06 Tyler Jon Back Electric power supply adapter device for electric golf cars and electric utility vehicles
US8772051B1 (en) * 2013-02-14 2014-07-08 Headway Technologies, Inc. Fabrication method for embedded magnetic memory
KR102099191B1 (ko) 2013-03-15 2020-05-15 인텔 코포레이션 내장된 자기 터널 접합을 포함하는 로직 칩
US9349772B2 (en) * 2014-04-25 2016-05-24 Globalfoundries Singapore Pte. Ltd. Methods for fabricatingintegrated circuits with spin torque transfer magnetic randomaccess memory (STT-MRAM) including a passivation layer formed along lateral sidewalls of a magnetic tunnel junction of the STT-MRAM

Also Published As

Publication number Publication date
JP2018525825A (ja) 2018-09-06
US20170047374A1 (en) 2017-02-16
US10109674B2 (en) 2018-10-23
AU2016306123A1 (en) 2018-01-25
WO2017027148A1 (en) 2017-02-16
EP3304610B1 (en) 2019-01-09
CN107924994A (zh) 2018-04-17
EP3304610A1 (en) 2018-04-11
BR112018002617B1 (pt) 2022-12-13
CN107924994B (zh) 2020-10-23
BR112018002617A2 (pt) 2018-10-02

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