AU2016306123A1 - Metallization process for a memory device - Google Patents

Metallization process for a memory device Download PDF

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Publication number
AU2016306123A1
AU2016306123A1 AU2016306123A AU2016306123A AU2016306123A1 AU 2016306123 A1 AU2016306123 A1 AU 2016306123A1 AU 2016306123 A AU2016306123 A AU 2016306123A AU 2016306123 A AU2016306123 A AU 2016306123A AU 2016306123 A1 AU2016306123 A1 AU 2016306123A1
Authority
AU
Australia
Prior art keywords
metallization layer
metallization
pct
mram
module
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2016306123A
Other languages
English (en)
Inventor
Seung Hyuk KANG
Yu Lu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qualcomm Inc
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of AU2016306123A1 publication Critical patent/AU2016306123A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/42—Vias, e.g. via plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/43—Layouts of interconnections

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Theoretical Computer Science (AREA)
  • Geometry (AREA)
  • Evolutionary Computation (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
AU2016306123A 2015-08-10 2016-07-11 Metallization process for a memory device Abandoned AU2016306123A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/822,326 2015-08-10
US14/822,326 US10109674B2 (en) 2015-08-10 2015-08-10 Semiconductor metallization structure
PCT/US2016/041790 WO2017027148A1 (en) 2015-08-10 2016-07-11 Metallization process for a memory device

Publications (1)

Publication Number Publication Date
AU2016306123A1 true AU2016306123A1 (en) 2018-01-25

Family

ID=56497906

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2016306123A Abandoned AU2016306123A1 (en) 2015-08-10 2016-07-11 Metallization process for a memory device

Country Status (8)

Country Link
US (1) US10109674B2 (https=)
EP (1) EP3304610B1 (https=)
JP (1) JP2018525825A (https=)
KR (1) KR20180040147A (https=)
CN (1) CN107924994B (https=)
AU (1) AU2016306123A1 (https=)
BR (1) BR112018002617B1 (https=)
WO (1) WO2017027148A1 (https=)

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US9799562B2 (en) * 2009-08-21 2017-10-24 Micron Technology, Inc. Vias and conductive routing layers in semiconductor substrates
US10270025B2 (en) * 2015-12-31 2019-04-23 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure having magnetic tunneling junction (MTJ) layer
US10169520B2 (en) * 2016-06-30 2019-01-01 Taiwan Semiconductor Manufacturing Company, Ltd. Method of reconfiguring uncrowned standard cells and semiconductor apparatus including uncrowned and crowned cells
US9997456B2 (en) * 2016-07-27 2018-06-12 Globalfoundries Inc. Interconnect structure having power rail structure and related method
US10566519B2 (en) * 2017-08-18 2020-02-18 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming a flat bottom electrode via (BEVA) top surface for memory
US10374005B2 (en) * 2017-12-29 2019-08-06 Globalfoundries Singapore Pte. Ltd. Density-controllable dummy fill strategy for near-MRAM periphery and far-outside-MRAM logic regions for embedded MRAM technology and method for producing the same
CN110648960B (zh) * 2018-06-27 2021-12-28 中电海康集团有限公司 Mram器件与其制作方法
CN110890460B (zh) * 2018-09-07 2023-06-30 联华电子股份有限公司 半导体元件及其制作方法
US11069853B2 (en) * 2018-11-19 2021-07-20 Applied Materials, Inc. Methods for forming structures for MRAM applications
US11476415B2 (en) 2018-11-30 2022-10-18 International Business Machines Corporation Patterning magnetic tunnel junctions and the like while reducing detrimental resputtering of underlying features
CN112447788B (zh) * 2019-09-03 2023-09-12 联华电子股份有限公司 磁阻式随机存取存储器
US11424403B2 (en) 2020-02-21 2022-08-23 International Business Machines Corporation Magnetoresistive random-access memory cell having a metal line connection

Family Cites Families (19)

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EP0817269B1 (en) * 1996-06-28 2008-09-10 Texas Instruments Incorporated Wordline layout for semiconductor memory device
US6635496B2 (en) * 2001-10-12 2003-10-21 Infineon Technologies, Ag Plate-through hard mask for MRAM devices
US6794238B2 (en) 2001-11-07 2004-09-21 Micron Technology, Inc. Process for forming metallized contacts to periphery transistors
AU2003235298A1 (en) 2002-04-23 2003-11-10 Nec Corporation Magnetic memory and its operating method
US6783995B2 (en) * 2002-04-30 2004-08-31 Micron Technology, Inc. Protective layers for MRAM devices
JP4618989B2 (ja) * 2003-02-18 2011-01-26 三菱電機株式会社 磁気記憶半導体装置
US7031183B2 (en) 2003-12-08 2006-04-18 Freescale Semiconductor, Inc. MRAM device integrated with other types of circuitry
JP2005303231A (ja) * 2004-04-16 2005-10-27 Sony Corp 磁気メモリ装置
US7635884B2 (en) * 2005-07-29 2009-12-22 International Business Machines Corporation Method and structure for forming slot via bitline for MRAM devices
JP4406407B2 (ja) * 2006-03-13 2010-01-27 株式会社東芝 磁気ランダムアクセスメモリ
US7666578B2 (en) * 2006-09-14 2010-02-23 Micron Technology, Inc. Efficient pitch multiplication process
US8395191B2 (en) * 2009-10-12 2013-03-12 Monolithic 3D Inc. Semiconductor device and structure
US8455267B2 (en) * 2009-05-14 2013-06-04 Qualcomm Incorporated Magnetic tunnel junction device and fabrication
US8674465B2 (en) 2010-08-05 2014-03-18 Qualcomm Incorporated MRAM device and integration techniques compatible with logic integration
JP2012043977A (ja) 2010-08-19 2012-03-01 Renesas Electronics Corp 半導体装置および半導体装置の製造方法
US9153981B2 (en) 2011-09-09 2015-10-06 Tyler Jon Back Electric power supply adapter device for electric golf cars and electric utility vehicles
US8772051B1 (en) * 2013-02-14 2014-07-08 Headway Technologies, Inc. Fabrication method for embedded magnetic memory
KR102099191B1 (ko) 2013-03-15 2020-05-15 인텔 코포레이션 내장된 자기 터널 접합을 포함하는 로직 칩
US9349772B2 (en) * 2014-04-25 2016-05-24 Globalfoundries Singapore Pte. Ltd. Methods for fabricatingintegrated circuits with spin torque transfer magnetic randomaccess memory (STT-MRAM) including a passivation layer formed along lateral sidewalls of a magnetic tunnel junction of the STT-MRAM

Also Published As

Publication number Publication date
JP2018525825A (ja) 2018-09-06
US20170047374A1 (en) 2017-02-16
US10109674B2 (en) 2018-10-23
KR20180040147A (ko) 2018-04-19
WO2017027148A1 (en) 2017-02-16
EP3304610B1 (en) 2019-01-09
CN107924994A (zh) 2018-04-17
EP3304610A1 (en) 2018-04-11
BR112018002617B1 (pt) 2022-12-13
CN107924994B (zh) 2020-10-23
BR112018002617A2 (pt) 2018-10-02

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Legal Events

Date Code Title Description
MK4 Application lapsed section 142(2)(d) - no continuation fee paid for the application