KR20180017012A - 비대칭 단자들을 갖는 캐패시터 구조 - Google Patents
비대칭 단자들을 갖는 캐패시터 구조 Download PDFInfo
- Publication number
- KR20180017012A KR20180017012A KR1020177035059A KR20177035059A KR20180017012A KR 20180017012 A KR20180017012 A KR 20180017012A KR 1020177035059 A KR1020177035059 A KR 1020177035059A KR 20177035059 A KR20177035059 A KR 20177035059A KR 20180017012 A KR20180017012 A KR 20180017012A
- Authority
- KR
- South Korea
- Prior art keywords
- asymmetric terminal
- discrete device
- asymmetric
- terminal
- manual
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000003990 capacitor Substances 0.000 title claims description 22
- 238000000034 method Methods 0.000 claims description 64
- 239000000919 ceramic Substances 0.000 claims description 53
- 238000004519 manufacturing process Methods 0.000 claims description 18
- 238000004891 communication Methods 0.000 claims description 14
- 238000007747 plating Methods 0.000 claims description 12
- 230000008878 coupling Effects 0.000 claims description 11
- 238000010168 coupling process Methods 0.000 claims description 11
- 238000005859 coupling reaction Methods 0.000 claims description 11
- 239000003985 ceramic capacitor Substances 0.000 claims description 7
- 238000007639 printing Methods 0.000 claims description 7
- 238000007598 dipping method Methods 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 37
- 238000003860 storage Methods 0.000 description 26
- 239000004065 semiconductor Substances 0.000 description 24
- 239000000758 substrate Substances 0.000 description 21
- 230000008569 process Effects 0.000 description 20
- 239000000463 material Substances 0.000 description 17
- 238000013461 design Methods 0.000 description 13
- 230000006870 function Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 8
- 230000005684 electric field Effects 0.000 description 8
- 230000015654 memory Effects 0.000 description 8
- 238000004806 packaging method and process Methods 0.000 description 7
- 239000004020 conductor Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000002800 charge carrier Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000001939 inductive effect Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 238000002231 Czochralski process Methods 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012768 molten material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/228—Terminals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G2/00—Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00
- H01G2/02—Mountings
- H01G2/06—Mountings specially adapted for mounting on a printed-circuit support
- H01G2/065—Mountings specially adapted for mounting on a printed-circuit support for surface mounting, e.g. chip capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/012—Form of non-self-supporting electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/228—Terminals
- H01G4/232—Terminals electrically connecting two or more layers of a stacked or rolled capacitor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Ceramic Capacitors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/736,219 US10079097B2 (en) | 2015-06-10 | 2015-06-10 | Capacitor structure for power delivery applications |
| US14/736,219 | 2015-06-10 | ||
| PCT/US2016/033038 WO2016200574A1 (en) | 2015-06-10 | 2016-05-18 | Capacitor structure with asymmetric terminals |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20180017012A true KR20180017012A (ko) | 2018-02-20 |
Family
ID=56101792
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020177035059A Ceased KR20180017012A (ko) | 2015-06-10 | 2016-05-18 | 비대칭 단자들을 갖는 캐패시터 구조 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10079097B2 (enExample) |
| EP (1) | EP3308389A1 (enExample) |
| JP (1) | JP2018523299A (enExample) |
| KR (1) | KR20180017012A (enExample) |
| CN (1) | CN107690688A (enExample) |
| WO (1) | WO2016200574A1 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023113335A1 (ko) * | 2021-12-13 | 2023-06-22 | 주식회사 아모텍 | 세라믹 커패시터 및 이의 제조방법 |
| KR20230111850A (ko) * | 2022-01-19 | 2023-07-26 | 주식회사 아모텍 | 세라믹 커패시터 및 그 제조방법 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2025142270A1 (ja) * | 2023-12-29 | 2025-07-03 | パナソニックIpマネジメント株式会社 | 抵抗器 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60190063U (ja) * | 1984-05-28 | 1985-12-16 | 関西日本電気株式会社 | 角チツプ部品 |
| JPS61144812A (ja) * | 1984-12-19 | 1986-07-02 | 株式会社村田製作所 | 積層セラミツクコンデンサの容量調整方法 |
| JPH06260377A (ja) * | 1993-02-12 | 1994-09-16 | Sumitomo Metal Ind Ltd | チップ形電子部品の端子電極形成方法 |
| JP3771308B2 (ja) * | 1996-02-13 | 2006-04-26 | コーア株式会社 | チップインダクタの製造方法 |
| JPH11204367A (ja) * | 1998-01-19 | 1999-07-30 | Murata Mfg Co Ltd | チップ状電子部品およびその製造方法 |
| JP2000049038A (ja) | 1998-07-31 | 2000-02-18 | Kyocera Corp | 積層セラミックコンデンサ |
| EP1179826A1 (en) | 2000-07-12 | 2002-02-13 | Littelfuse Ireland Development Company Limited | An integrated passive device and a method for producing such a device |
| JP4187184B2 (ja) * | 2002-02-28 | 2008-11-26 | Tdk株式会社 | 電子部品 |
| JP3885938B2 (ja) * | 2002-03-07 | 2007-02-28 | Tdk株式会社 | セラミック電子部品、ペースト塗布方法及びペースト塗布装置 |
| JP2004039937A (ja) * | 2002-07-04 | 2004-02-05 | Tdk Corp | セラミック電子部品 |
| KR100843434B1 (ko) | 2006-09-22 | 2008-07-03 | 삼성전기주식회사 | 적층형 칩 커패시터 |
| DE102007044604A1 (de) | 2007-09-19 | 2009-04-09 | Epcos Ag | Elektrisches Vielschichtbauelement |
| JP4370352B2 (ja) | 2007-10-31 | 2009-11-25 | Tdk株式会社 | 積層コンデンサ |
| JP4752901B2 (ja) * | 2008-11-27 | 2011-08-17 | 株式会社村田製作所 | 電子部品及び電子部品内蔵基板 |
| DE102011014965B4 (de) | 2011-03-24 | 2014-11-13 | Epcos Ag | Elektrisches Vielschichtbauelement |
| KR101462767B1 (ko) * | 2013-03-14 | 2014-11-20 | 삼성전기주식회사 | 기판 내장용 적층 세라믹 전자부품 및 적층 세라믹 전자부품 내장형 인쇄회로기판 |
-
2015
- 2015-06-10 US US14/736,219 patent/US10079097B2/en not_active Expired - Fee Related
-
2016
- 2016-05-18 KR KR1020177035059A patent/KR20180017012A/ko not_active Ceased
- 2016-05-18 WO PCT/US2016/033038 patent/WO2016200574A1/en not_active Ceased
- 2016-05-18 EP EP16727263.2A patent/EP3308389A1/en not_active Withdrawn
- 2016-05-18 JP JP2017563315A patent/JP2018523299A/ja active Pending
- 2016-05-18 CN CN201680033348.8A patent/CN107690688A/zh active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023113335A1 (ko) * | 2021-12-13 | 2023-06-22 | 주식회사 아모텍 | 세라믹 커패시터 및 이의 제조방법 |
| KR20230111850A (ko) * | 2022-01-19 | 2023-07-26 | 주식회사 아모텍 | 세라믹 커패시터 및 그 제조방법 |
| WO2023140501A1 (ko) * | 2022-01-19 | 2023-07-27 | 주식회사 아모텍 | 세라믹 커패시터 및 그 제조방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2018523299A (ja) | 2018-08-16 |
| CN107690688A (zh) | 2018-02-13 |
| US10079097B2 (en) | 2018-09-18 |
| US20160365196A1 (en) | 2016-12-15 |
| EP3308389A1 (en) | 2018-04-18 |
| WO2016200574A1 (en) | 2016-12-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
Patent event date: 20171205 Patent event code: PA01051R01D Comment text: International Patent Application |
|
| PG1501 | Laying open of application | ||
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20181018 Comment text: Request for Examination of Application |
|
| PA0302 | Request for accelerated examination |
Patent event date: 20181018 Patent event code: PA03022R01D Comment text: Request for Accelerated Examination |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20190219 Patent event code: PE09021S01D |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20190626 Patent event code: PE09021S01D |
|
| E601 | Decision to refuse application | ||
| PE0601 | Decision on rejection of patent |
Patent event date: 20191016 Comment text: Decision to Refuse Application Patent event code: PE06012S01D Patent event date: 20190626 Comment text: Notification of reason for refusal Patent event code: PE06011S01I Patent event date: 20190219 Comment text: Notification of reason for refusal Patent event code: PE06011S01I |