KR20170129301A - Solder, sputtering target material and method for fabricating sputtering target material - Google Patents

Abstract

The present invention provides a solder, a sputtering target material, and a method for producing a sputtering target material. The solder used for bonding a target material layer with a backing plate when producing a sputtering target material comprises: 8-9 wt% of zinc (Zn), 82-91.5 wt% of tin (Sn), and 0.5-10 wt% of indium (In), wherein a sum of Sn and In is less than and equal to 91 wt%. According to the present invention, the solder can maintain bonding strength between the target material layer and the backing plate under a large area and high temperature sputtering condition.

Description

TECHNICAL FIELD [0001] The present invention relates to a solder, a sputtering target material, and a method for manufacturing a sputtering target material.

The present invention relates to a solder for manufacturing a sputtering target material and a sputtering target material using the solder. In particular, the present invention relates to a solder containing indium (In) and a sputtering target material produced using the solder.

Thin-film sputtering technology is a technique of impinging the surface of a metal target material with a pulsed DC plasma to emit atoms of a target material and sputter-deposited on the surface of the target substrate to form a thin film. The technology is of high quality, Stability, etc., and is used for coating plastics, metals, glass, cloth or composite materials.

Since a large amount of thermal energy accumulation occurs in the sputtering operation process, a large amount of thermal energy accumulation occurs, so that a metal backing plate having a relatively good thermal conductivity, for example, a copper (Cu) backing plate or a copper alloy backing plate, Whereby the heat of the target material is diffused and the target material is cooled. When the bonding strength between the target material and the backing plate is poor or the thermal conductivity at the interface is poor, the temperature of the target material sharply rises during the sputtering operation, causing desoldering layer deposition, backing plate dissolution, It can cause problems.

According to the conventional method, a target material and a backing plate are bonded using indium (In) having a relatively low melting point as a solder. However, when indium is expensive, and when applied to a large-area target material, heat is exerted by the heat, and the bonding strength during operation at a high temperature is poor so that the target material is easily peeled off from the backing plate.

Therefore, there is a need to solve the problems in the prior art by providing advanced solder and a sputtering target material manufactured using such a solder.

It is an object of the present invention to provide a solder, a sputtering target material and a method of manufacturing a sputtering target material so that the alloy solder can maintain the bonding strength between the target material layer and the backing plate under large area and high temperature sputtering conditions.

In order to achieve the above object, the present invention provides a solder for bonding a backing plate to a target material layer in the production of a sputtering target material. Wherein the solder comprises zinc (Zn) in a weight ratio of substantially 8 to 9, tin (Sn) in a weight percentage of substantially 82 to 91.5 and indium (In) in a weight percentage of substantially 0.5 to 10, The total content of indium is less than or equal to 91% by weight.

Here, among the solders, the weight% of zinc is 9, the weight percentage of tin is 89, and the weight percentage of indium is 2.

Here, the solder is for bonding a metal target material layer and a copper (Cu) -containing backing plate.

Here, the solder is for bonding an aluminum (Al) -containing target material layer and a copper (Cu) -containing backing plate.

In order to achieve the above object, the present invention provides a sputtering target material comprising a target material layer, a backing plate, and a solder for bonding the target material layer and the backing plate. Wherein the solder comprises zinc (Zn) having a weight of substantially 8 to 9, tin (Sn) having a weight of substantially 82 to 91.5 and indium (In) having a weight of 0.5 to 10, The total content of tin and indium is less than or equal to 91% by weight.

Here, among the solders, the weight% of zinc is 9, the weight percentage of tin is 89, and the weight percentage of indium is 2.

Here, the target material layer is a metal target material layer; The backing plate is a copper-containing backing plate.

Here, the target material layer is an aluminum-containing target material layer; The backing plate is a copper-containing backing plate.

In order to achieve the above object, the present invention provides a method for manufacturing a sputtering target material. The method for manufacturing the sputtering target material includes the following steps. (Sn) having a weight percent of substantially 82 to 91.5 and indium (In) having a weight percent of substantially 0.5 to 10, wherein the total amount of tin and indium The content of the solder is less than or equal to 91% by weight. Subsequently, the solder is placed between the backing plate and the target material layer. Next, a pressing process is performed to bond the backing plate and the target material layer by solder.

Wherein positioning the solder between the backing plate and the target material layer comprises heating the backing plate or the target material layer until the melting point temperature of the solder is reached; Applying the solder to one of the backing plate and the target material layer; And facing the solder with the other of the backing plate and the target material layer.

According to the above description, the embodiment of the present invention forms a sputtering target material by bonding a target material layer and a backing plate using an alloy solder having a specified weight percentage of tin-zinc-indium as a composition component. Such an alloy solder can maintain the bonding strength between the target material layer and the backing plate under large-area and high-temperature sputtering conditions, and can prevent the target material layer from being peeled off from the backing plate. In addition, the content of indium in the solder can be reduced to substantially less than or equal to 10 wt%, and the manufacturing cost of the sputtering target material can be greatly reduced. Thus, the problem of the prior art can be solved in consideration of the strength, the thermal conductivity and the heat resistance of the sputtering target material, the ease of operation, and the cost.

Hereinafter, the present invention will be described in detail with reference to specific examples, but it is not intended to limit the present invention.

The present invention provides a solder, a sputtering target material, and a method for manufacturing a sputtering target material, which can solve the problem of manufacturing a conventional sputtering target material at a high cost and can solve the problem of difficulty in large- have. BRIEF DESCRIPTION OF THE DRAWINGS The above and other objects, features and advantages of the present invention will become more apparent and better understood by reference to the following detailed description of various sputtering target materials made from different proportional solder materials.

It should be noted, however, that these specific embodiments and methods are not intended to limit the invention. The invention may be practiced using other features, assemblies, methods and variables. The preferred embodiments are merely illustrative of the technical features of the present invention and are not intended to limit the scope of the present invention. Those skilled in the art will appreciate that various modifications, additions and substitutions are possible, without departing from the scope and spirit of the invention as disclosed in the accompanying claims.

The solder provided in accordance with one embodiment of the present invention is for bonding the target material layer and the backing plate in the production of the sputtering target material. Wherein the solder comprises zinc (Zn) in a weight percentage of substantially 8 to 9, tin (Sn) in a weight percentage of substantially 82 to 91.5 and indium (In) in a weight percentage of substantially 0.5 to 10, And indium is less than or equal to 91 wt%. In other words, the solder is substantially composed of an alloy of tin-zinc-indium.

In one embodiment, the solder of the present invention comprises zinc (Zn), which is substantially 8 to 9 wt%, tin (Sn), which is substantially 83 to 91 wt%, and indium In).

In one embodiment, the solder of the present invention comprises zinc (Zn) with a weight percent of substantially 8 to 9, tin (Sn) with a weight percent of substantially 86 to 91 and indium (III) with a weight percent of 1 to 5 In).

In one embodiment, the solder of the present invention comprises zinc (Zn), which is substantially 8 to 9 wt%, tin (Sn), which is substantially 88 to 91 wt%, and indium (III), which is substantially 1 to 3 wt% In).

In one embodiment, the solder of the present invention comprises zinc having a weight percent of substantially 8.5 to 9, tin having a weight percent of substantially 89 to 90, and indium having a weight percent of substantially 1.5 to 2.

In one embodiment, the weight percent of zinc in the solder of the present invention is substantially 9, the wt% of tin is substantially 89, and the wt% of indium is substantially 2.

On the other hand, in some embodiments of the present invention, the solder may contain minor amounts of other elements, for example less than 0.5% of other elements. For example, aluminum, titanium (Ti), molybdenum (Mo), tantalum (Ta), niobium (Nb), copper, chromium (Cr), silver (Ag), silicon (La), Ce, Pr, Ne, Prommium, Sm, Eu, Gd, Terbium, Dys, Yttrium (Y), lutetium (Lu), yttrium y), scandium (Sc), or combinations thereof.

In one embodiment of the present invention, the target material layer may be a metal target material layer. In one embodiment, the target material layer may be a layer of aluminum (Al) -containing target material. In one embodiment, the target material layer may be a copper (Cu) containing target material layer. The backing plate is preferably a backing plate containing copper (Cu), for example, a backing plate made of copper or a backing plate made of a copper-containing alloy.

In one embodiment, the temperature at which the metal target material layer and the copper containing backing plate are bonded using the solder alloy of the present invention is substantially 180 ° C to 220 ° C. In one example, the temperature at which the aluminum containing target material layer and the copper containing backing plate are bonded using the solder alloy of the present invention is substantially 180 占 폚 to 220 占 폚.

The solder alloy contains tin, which is substantially 82 to 91.5 wt%, so that a very high bond strength can be maintained between the metal target material layer and the copper containing backing plate at high temperatures. For example, at a temperature of 150 캜, the bond strength between the aluminum-containing target material layer and the copper-containing backing plate can reach substantially 2.5 kgf / mm 2 or more, and preferably reach 3.0 kgf / have.

In addition, the solder alloy contains zinc, which is substantially 8 to 9% by weight. Therefore, it is possible to inhibit the tin in the solder alloy from reacting with the copper element in the copper-containing backing plate, to reduce the erosion phenomenon that may occur at the time of bonding, and to improve the wettability of the solder alloy, Tightly.

A method for manufacturing a sputtering target material by bonding a metal target material layer and a copper containing backing plate includes the following steps. First, surface treatment is performed on the bonding surface of the metal target material, followed by rubbing treatment, followed by washing and degreasing. Next, the metal target is heated until reaching the melting point temperature or more of the solder alloy, and the solder alloy is applied to the bonding surface of the metal target material by a dipping method to form a bonding layer. In consideration of the sheet resistance of the solder alloy, the thickness of the bonding layer is substantially 2 mm or less, preferably substantially 0.1 to 1 mm.

The degreasing of the bonding surface of the copper-containing backing plate is continued until the bonding surface of the copper-containing backing plate is heated to a temperature not lower than the melting point of the solder alloy, and then the bonding surface of the copper- . The pressure to be squeezed depends on the area of the metal target. In one embodiment of the present invention, the pressure is 0.0001 MPa to 0.1 MPa. In another embodiment of the present invention, the bonding layer may be first applied to the bonding surface of the copper-containing backing plate, and then the bonding surface of the metal target material may be pressed against the bonding layer.

Hereinafter, the technical advantages of the present invention will be described by explaining a plurality of concrete examples and comparing tensile strengths with comparative examples. Zinc / indium (Sn / Zn / In) having a weight ratio of 89: 9: 2 was prepared by using tin having a purity of 99.99%, zinc having a purity of 99.99% and indium having a purity of 99.99% A soft flux (solder alloy) is prepared, and the flux is represented by tin-zinc-indium (Sn-Zn-2In).

Next, a tin-zinc-indium (Sn-Zn-2In) soft flux is obtained by bonding a layer of an aluminum-containing target material and a copper-containing backing plate to form a sputtering target material, and three sets of sputtering target materials are used as measurement samples , A tensile strength test was conducted using a sputtering target material prepared by using three sets of indium-based solder as a comparative example. According to the tensile strength test of this example, a sputtering target material was formed by combining an aluminum-containing target material layer having a base area of 10 mm x 50 mm and a copper-containing backing plate having a size of 20 mm x 20 mm x 5 mm, The sputtering target material was tested at room temperature (23 占 폚) using the apparatus AUTOGRAPH AGS-500B (manufactured by Shimadzu Corporation, Japan). The measurement results are shown in Table 1 below.

Sample Used ductile flux Tensile strength (N / mm 2) Tensile strength (Kg / mm 2) Example 1 Sn-Zn-2In 21.8 2.22 Example 2 Sn-Zn-2In 24 2.45 Example 3 Sn-Zn-2In 18.1 1.85 Comparative Example 1 In 13.73 1.40 Comparative Example 2 In 13.46 1.37 Comparative Example 3 In 11 1.12

As can be seen from the results of the tensile strength test, the tensile strength of the sputtering target material to be bonded using the Sn-Zn-2In soft flux is 32% to 98% higher than that of the sputtering target material made of the indium-based solder . This is because when the target material layer and the copper-containing backing plate are bonded to each other with the solder provided by the embodiment of the present invention, the bonding strength of the aluminum-containing target material layer and the copper-containing backing plate can be surely maintained under high temperature sputtering conditions . And, since the content of indium used in the solder is very low, it is advantageous to lower the production cost.

According to the above description, the embodiment of the present invention forms a sputtering target material by bonding a target material layer and a backing plate using an alloy solder having a specified weight percentage of tin-zinc-indium as a composition component. Such an alloy solder can maintain the bonding strength between the target material layer and the backing plate under large-area and high-temperature sputtering conditions, and can prevent the target material layer from being peeled off from the backing plate. In addition, since the content of indium in the solder can be reduced to substantially less than or equal to 10 wt%, the manufacturing cost of the sputtering target material can be greatly reduced. Thus, the problem of the prior art can be solved in consideration of the strength, the thermal conductivity and the heat resistance of the sputtering target material, the ease of operation, and the cost.

Although the present invention has been described above as a preferred embodiment, it is not intended to limit the present invention. The process steps and structures described above did not include a complete fabrication process to fabricate the entire integrated circuit. The present invention may be implemented in combination with various different integrated circuit fabrication techniques that may be present or future.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or essential characteristics thereof. And all such corresponding changes and modifications should fall within the scope of protection of the claims of the present invention.

Claims (10)

A solder for bonding a target material layer and a backing plate in the manufacture of a sputtering target material,
Zinc in weight percent of 8 to 9, tin in weight percent of 82 to 91.5, and indium in weight percent of 0.5 to 10; Wherein the total content of tin and indium is less than or equal to 91 wt%. The method according to claim 1,
Wherein among the solders, the weight% of zinc is 9, the weight percentage of tin is 89, and the weight% of indium is 2. [ The method according to claim 1,
Wherein the solder is for bonding a layer of a metal target material and a copper containing backing plate. The method according to claim 1,
Wherein the solder is for joining a copper containing backing plate with an aluminum containing target material layer. A target material layer;
Backing plate; And
And a solder for bonding the backing plate to the target material layer,
Wherein the solder comprises zinc of 8 to 9 weight percent, tin of 82 to 91.5 weight percent and indium of 0.5 to 10 weight percent; Wherein the total content of tin and indium is less than or equal to 91 wt%. 6. The method of claim 5,
Wherein in the solder, the weight% of zinc is 9, the weight% of tin is 89, and the weight% of indium is 2. 6. The method of claim 5,
Wherein the target material layer is a metal target material layer and the backing plate is a copper containing backing plate. 6. The method of claim 5,
Wherein the target material layer is an aluminum containing target material layer and the backing plate is a copper containing backing plate. Zinc (Zn) having a weight of 8 to 9, tin having a weight of 82 to 91.5 and indium having a weight of 0.5 to 10, and the total content of tin and indium is less than or equal to 91 wt% ;
Positioning the solder between the backing plate and the target material layer; And
And performing a pressing process to bond the backing plate and the target material layer by the solder. 10. The method of claim 9,
Wherein positioning the solder between the backing plate and the target material layer comprises:
Heating the backing plate or the target material layer to a temperature above a melting point temperature of the solder;
Applying the solder to one of the backing plate and the target material layer; And
Facing the backing plate and the other of the target material layers with the solder. ≪ Desc / Clms Page number 19 >