CN112222593B - Welding method of tantalum target assembly - Google Patents
Welding method of tantalum target assembly Download PDFInfo
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- CN112222593B CN112222593B CN202011036133.6A CN202011036133A CN112222593B CN 112222593 B CN112222593 B CN 112222593B CN 202011036133 A CN202011036133 A CN 202011036133A CN 112222593 B CN112222593 B CN 112222593B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
- B23K20/021—Isostatic pressure welding
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
- B23K20/023—Thermo-compression bonding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/24—Preliminary treatment
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Abstract
The invention relates to a welding method of a tantalum target assembly, which comprises the following steps: and performing meltallizing treatment on the tantalum target material with the threaded welding surface, performing sand blasting treatment on the welding surface of the back plate, and performing hot isostatic pressing welding on the tantalum target material subjected to meltallizing treatment and the back plate subjected to sand blasting treatment to obtain the tantalum target material assembly. According to the welding method provided by the invention, the surface of the tantalum target is provided with threads, the surface is subjected to the meltallizing treatment, and the welding surface of the back plate is subjected to the sand blasting treatment, so that the uniform stress distribution of the welding surface of the tantalum target assembly is realized by utilizing the synergistic coupling effect of the threads and the back plate, the welding bonding rate is over 97%, and the heat transfer performance between the target and the back plate is improved by 10-25%.
Description
Technical Field
The invention relates to the field of target welding, in particular to a welding method of a tantalum target assembly.
Background
At present, physical vapor deposition is one of the most critical processes in the semiconductor chip production process, and the purpose of the process is to deposit a metal or a metal compound in the form of a thin film on a silicon wafer or other substrate, and then to form a complex wiring structure in the semiconductor chip through the cooperation of processes such as photolithography and etching. Physical vapor deposition is accomplished by a sputtering machine, and the sputtering target is a very important key consumable used in the above process. Common sputtering targets include high-purity Ta and nonferrous metals such as Ti, Al, Co or Cu.
With the increase of the size of a wafer from 200mm to 300mm, the size of a corresponding sputtering target must be increased to meet the basic requirements of PVD coating, meanwhile, the line width is reduced to 45-90nm, based on the conductivity of a conductor and the matching performance of a barrier layer, the sputtering target is also converted from an ultra-high purity Al/Ti system to an ultra-high purity Cu/Ta system, the importance of the Ta target in the semiconductor sputtering industry is increased, and the demand is increased. While the target is usually welded to the backing plate in use, for example, CN107511599A discloses a welding method for a tantalum target assembly, which includes: providing a tantalum target material and a copper back plate, wherein the tantalum target material is provided with a first welding surface, and the copper back plate is provided with a second welding surface; forming a bonding layer on the first welding surface, wherein the melting point of the bonding layer is less than that of the tantalum target material; forming a molten first solder layer on the surface of the bonding layer, wherein the melting point of the bonding layer is greater than that of the first solder layer; forming a second molten solder layer on the second welding surface, wherein the melting point of the bonding layer is greater than that of the second solder layer; pressing the tantalum target material and the copper back plate, and enabling the first solder layer to be in contact with the second solder layer; and pressing the tantalum target material and the copper back plate, and then cooling. Because the bonding layer is formed on the first welding surface, and the melting point of the bonding layer is smaller than that of the tantalum target material and larger than that of the first welding flux layer and the second welding flux layer, the welding strength of the tantalum target material, the first welding flux layer and the second welding flux layer after cooling treatment is enhanced. Thereby enhancing the welding strength of the tantalum target material and the copper back plate. And the copper back plate can be repeatedly used.
CN110369897A a method for welding a target and a backing plate, said method comprising the steps of: preparing a target material and a back plate, and processing threads on a welding surface of a material with higher hardness; combining the target material and the back plate, and placing the combined material in a metal sheath; degassing the metal sheath filled with the combined material, and then sealing the metal sheath; heating the sealed metal sheath to a first temperature, pressurizing to a first pressure, heating to a second temperature, raising the pressure to a second pressure along with the temperature, preserving heat and pressure, and cooling to room temperature; and removing the metal sheath to complete the welding of the target and the back plate. By means of the method of firstly heating and then pressurizing, the threads are better embedded into materials with smaller hardness, the contact area of the welding surface is improved, the oxide layer of the welding surface can be damaged, the blocking effect of the oxide layer on diffusion welding is reduced, and the welding strength is improved.
However, the existing welding method still has the problems of uneven stress distribution of the welding surface, lower welding bonding rate, poor heat transfer performance between the target material and the back plate and the like.
Disclosure of Invention
In view of the problems in the prior art, the invention aims to provide a welding method of a tantalum target assembly, which enables the stress distribution of the welding surface of the tantalum target assembly to be uniform through the specific treatment of the welding surface of a target and a back plate, the welding bonding rate to be more than 97%, and the heat transfer performance between the target and the back plate to be improved by 10-25%.
In order to achieve the purpose, the invention adopts the following technical scheme:
the invention provides a welding method of a tantalum target assembly, which comprises the following steps: and carrying out fusion jetting treatment on the tantalum target material with the welding surface provided with the threads, carrying out sand blasting treatment on the welding surface of the back plate, and then carrying out hot isostatic pressing welding on the tantalum target material subjected to fusion jetting treatment and the back plate subjected to sand blasting treatment to obtain the tantalum target material assembly.
According to the welding method provided by the invention, the surface of the tantalum target is provided with threads, the surface is subjected to the meltallizing treatment, and the welding surface of the back plate is subjected to the sand blasting treatment, so that the uniform stress distribution of the welding surface of the tantalum target assembly is realized by utilizing the synergistic coupling effect of the threads and the back plate, the welding bonding rate is over 97%, and the heat transfer performance between the target and the back plate is improved by 10-25%.
In a preferred embodiment of the present invention, the depth of the thread is 2 to 4mm, and may be, for example, 2mm, 2.1mm, 2.2mm, 2.3mm, 2.4mm, 2.5mm, 2.6mm, 2.7mm, 2.8mm, 2.9mm, 3mm, 3.1mm, 3.2mm, 3.3mm, 3.4mm, 3.5mm, 3.6mm, 3.7mm, 3.8mm, 3.9mm or 4mm, but is not limited to the above-mentioned values, and other values not listed in this range are also applicable.
In a preferred embodiment of the present invention, the pitch of the thread is 0.6 to 0.8mm, and may be, for example, 0.6mm, 0.61mm, 0.62mm, 0.63mm, 0.64mm, 0.65mm, 0.66mm, 0.67mm, 0.68mm, 0.69mm, 0.7mm, 0.71mm, 0.72mm, 0.73mm, 0.74mm, 0.75mm, 0.76mm, 0.77mm, 0.78mm, 0.79mm, or 0.8mm, but is not limited to the above-mentioned values, and other values not specifically mentioned in this range are also applicable.
In a preferred embodiment of the present invention, the area of the thread is 55 to 80% of the area of the target bonding surface, and may be, for example, 55%, 60%, 65%, 70%, 75%, or 80%, but is not limited to the above-mentioned values, and other values not shown in the above-mentioned range are also applicable.
The area of the thread in the present invention is the area of the weld face occupied by the thread on the weld face, not the area of the thread itself.
In a preferred embodiment of the present invention, the current of the meltblowing process is 240-260A, such as 240A, 241A, 242A, 243A, 244A, 245A, 246A, 247A, 248A, 249A, 250A, 251A, 252A, 253A, 254A, 255A, 256A, 257A, 258A, 259A or 260A, but is not limited to the values listed, and other values not listed in this range are also applicable.
Preferably, the voltage of the meltdown treatment is 30 to 45V, and may be, for example, 30V, 31V, 32V, 33V, 34V, 35V, 36V, 37V, 38V, 39V, 40V, 41V, 42V, 43V, 44V, or 45V, but is not limited to the values listed, and other values not listed in the range are also applicable.
In a preferred embodiment of the present invention, the metal source for the thermal spraying treatment is 20 to 100 μm of the powdery aluminum, and may be, for example, 20 μm, 30 μm, 40 μm, 50 μm, 60 μm, 70 μm, 80 μm, 90 μm or 100 μm, but is not limited to the above-mentioned values, and other values not mentioned in the above range are also applicable.
Preferably, the roughness of the target bonding surface after the thermal spraying treatment is 10 to 25 μm, and may be, for example, 10 μm, 11 μm, 12 μm, 13 μm, 14 μm, 15 μm, 16 μm, 17 μm, 18 μm, 19 μm, 20 μm, 21 μm, 22 μm, 23 μm, 24 μm or 25 μm, but is not limited to the values listed, and other values not listed in the range are also applicable.
According to a preferred technical scheme of the invention, the sand material in the sand blasting treatment is a mixture of 24# white corundum and 26# white corundum.
Preferably, the mass ratio of the No. 24 white corundum to the No. 26 white corundum in the sand grains is 1: 1.
In a preferred embodiment of the present invention, the roughness of the back plate bonding surface after the sandblasting is 5 to 7 μm, for example, 5 μm, 5.1 μm, 5.2 μm, 5.3 μm, 5.4 μm, 5.5 μm, 5.6 μm, 5.7 μm, 5.8 μm, 5.9 μm, 6 μm, 6.1 μm, 6.2 μm, 6.3 μm, 6.4 μm, 6.5 μm, 6.6 μm, 6.7 μm, 6.8 μm, 6.9 μm or 7 μm, and the like, but is not limited to the above-mentioned values, and other values not yet mentioned in the range can be applied similarly.
In a preferred embodiment of the present invention, the temperature of the hot isostatic pressing is 500-.
Preferably, the holding time for the hot isostatic pressing welding is 3-4h, for example, 3h, 3.1h, 3.2h, 3.3h, 3.4h, 3.5h, 3.6h, 3.7h, 3.8h, 3.9h or 4h, etc., but not limited to the recited values, and other values not recited in this range are also applicable.
Preferably, the hot isostatic pressing welding pressure is 80-120MPa, such as 80MPa, 85MPa, 90MPa, 95MPa, 100MPa, 105MPa, 110MPa, 115MPa or 120MPa, but not limited to the recited values, and other values not recited in this range are equally applicable.
As a preferable aspect of the present invention, the welding method includes: carrying out fusion jetting treatment on the tantalum target material with the welding surface provided with the threads, carrying out sand blasting treatment on the welding surface of the back plate, and then carrying out hot isostatic pressing welding on the tantalum target material subjected to fusion jetting treatment and the back plate subjected to sand blasting treatment to obtain a tantalum target material assembly;
the area of the thread is 55-80% of the area of the welding surface of the target;
the roughness of the target welding surface after the fusion jetting treatment is 10-25 mu m;
the roughness of the welding surface of the backboard after sand blasting treatment is 5-7 mu m.
Compared with the prior art, the invention has the following beneficial effects:
(1) according to the welding method provided by the invention, the surface of the tantalum target is provided with threads, the surface is subjected to the meltallizing treatment, and the welding surface of the back plate is subjected to the sand blasting treatment, so that the uniform stress distribution of the welding surface of the tantalum target assembly is realized by utilizing the synergistic coupling effect of the threads and the back plate, the welding bonding rate is over 97%, and the heat transfer performance between the target and the back plate is improved by 10-25%.
(2) The method provided by the invention further strengthens the uniformity of stress distribution of the welding surface and the heat transfer performance between the target and the back plate by reasonably selecting the threaded area of the welding surface of the target and specifically selecting the roughness of the fusion jetting treatment and the sand blasting treatment.
Detailed Description
To better illustrate the invention and to facilitate the understanding of the technical solutions thereof, typical but non-limiting examples of the invention are as follows:
example 1
The embodiment provides a welding method of a tantalum target assembly, which comprises the following steps: carrying out fusion jetting treatment on the tantalum target material with the welding surface provided with the threads, carrying out sand blasting treatment on the welding surface of the back plate, and then carrying out hot isostatic pressing welding on the tantalum target material subjected to fusion jetting treatment and the back plate subjected to sand blasting treatment to obtain a tantalum target material assembly;
the area of the threads is 70% of the area of the welding surface of the target, the depth of the threads is 3mm, and the distance between the threads is 0.7 mm;
the roughness of the target welding surface after the spray treatment is 17 microns, the current of the spray treatment is 250A, the voltage of the spray treatment is 38V, the metal source of the spray treatment is aluminum powder with the thickness of 60 microns, and the roughness of the target welding surface after the spray treatment is 17 microns;
the roughness of the welding surface of the back plate after sand blasting is 6 microns, and the sand material in the sand blasting is a mixture of 24# white corundum and 26# white corundum in a mass ratio of 1: 1;
the temperature of hot isostatic pressing welding is 600 ℃, the heat preservation time is 4h, and the pressure is 97 MPa.
The stress distribution of the welding surface of the tantalum target material component is uniform, the welding bonding rate is 98%, and the heat transfer performance between the target material and the back plate is excellent.
Example 2
The embodiment provides a welding method of a tantalum target assembly, which comprises the following steps: carrying out fusion jetting treatment on the tantalum target material with the welding surface provided with the threads, carrying out sand blasting treatment on the welding surface of the back plate, and then carrying out hot isostatic pressing welding on the tantalum target material subjected to fusion jetting treatment and the back plate subjected to sand blasting treatment to obtain a tantalum target material assembly;
the area of the threads is 55% of the area of the welding surface of the target, the depth of the threads is 2mm, and the distance between the threads is 0.6 mm;
the roughness of the welding surface of the target after the fusion jetting treatment is 10 micrometers, the current of the fusion jetting treatment is 260A, the voltage of the fusion jetting treatment is 30V, the metal source of the fusion jetting treatment is 27 micrometers of aluminum powder, and the roughness of the welding surface of the target after the fusion jetting treatment is 12 micrometers;
the roughness of the welding surface of the backboard after sand blasting is 5 mu m, and the sand material in the sand blasting is a mixture of 24# white corundum and 26# white corundum in a mass ratio of 1: 1;
the hot isostatic pressing welding temperature is 500 ℃, the heat preservation time is 3h, and the pressure is 80 MPa.
The stress distribution of the welding surface of the tantalum target material component is uniform, the welding bonding rate is 99%, and the heat transfer performance between the target material and the back plate is excellent.
Example 3
The embodiment provides a welding method of a tantalum target assembly, which comprises the following steps: carrying out fusion jetting treatment on the tantalum target material with the welding surface provided with the threads, carrying out sand blasting treatment on the welding surface of the back plate, and then carrying out hot isostatic pressing welding on the tantalum target material subjected to fusion jetting treatment and the back plate subjected to sand blasting treatment to obtain a tantalum target material assembly;
the area of the threads is 78% of the area of the welding surface of the target, the depth of the threads is 4mm, and the distance between the threads is 0.6 mm;
the roughness of the welding surface of the target after the fusion jetting treatment is 24 micrometers, the current of the fusion jetting treatment is 240A, the voltage of the fusion jetting treatment is 44V, the metal source of the fusion jetting treatment is 88 micrometers of aluminum powder, and the roughness of the welding surface of the target after the fusion jetting treatment is 24 micrometers;
the roughness of the welding surface of the backboard after sand blasting is 7 microns, and the sand material in the sand blasting is a mixture of 24# white corundum and 26# white corundum in a mass ratio of 1: 1;
the hot isostatic pressing welding temperature is 700 ℃, the heat preservation time is 3.3h, and the pressure is 120 MPa.
The stress of the welding surface of the tantalum target material component is distributed uniformly, the welding bonding rate is 97.2%, and the heat transfer performance between the target material and the back plate is excellent.
Example 4
The difference from example 1 is only that the area of the screw thread is 40% of the area of the welding surface of the target material, the stress distribution of the welding surface is not uniform, the welding bonding rate is 90%, and the heat transfer performance is slightly lowered.
Example 5
The difference from example 1 was only that the roughness of the target bonding surface after the spray treatment was 5 μm, the stress distribution of the bonding surface was uneven, the bonding rate was 92%, and the heat transfer performance was slightly lowered.
Example 6
The only difference from example 1 is that the roughness of the back plate bonding surface after the sandblasting was 20 μm, the stress distribution of the bonding surface was uneven, the bonding rate was 91%, and the heat transfer performance was slightly lowered.
Comparative example 1
The difference from the embodiment 1 is that the welding surface of the target is not provided with threads, the stress distribution of the welding surface is uneven, the welding bonding rate is 80%, and the heat transfer performance is obviously reduced.
Comparative example 2
The difference from example 1 is that the target material welding surface was not subjected to the spray treatment, the welding bonding rate was 87%, and the heat transfer performance was remarkably reduced.
Comparative example 3
The difference from the example 1 is that the back plate welding surface is not subjected to sand blasting treatment, the stress distribution of the welding surface is uneven, the welding bonding rate is 83%, and the heat transfer performance is remarkably reduced.
According to the welding method provided by the invention, the threads are arranged on the surface of the tantalum target material, the melting jetting treatment is carried out, meanwhile, the sand blasting treatment is carried out on the welding surface of the back plate, the stress distribution of the welding surface of the tantalum target material assembly is uniform by utilizing the synergistic coupling effect of the threads and the back plate, the welding bonding rate is more than 97%, and the heat transfer performance between the target material and the back plate is improved by 10-25%.
The applicant declares that the present invention illustrates the detailed structural features of the present invention through the above embodiments, but the present invention is not limited to the above detailed structural features, that is, it does not mean that the present invention must be implemented depending on the above detailed structural features. It should be understood by those skilled in the art that any modifications, equivalent substitutions of selected elements of the present invention, additions of auxiliary elements, selection of specific forms, etc., are intended to fall within the scope and disclosure of the present invention.
The preferred embodiments of the present invention have been described in detail, however, the present invention is not limited to the specific details of the above embodiments, and various simple modifications may be made to the technical solution of the present invention within the technical idea of the present invention, and these simple modifications are all within the protection scope of the present invention.
It should be noted that the various technical features described in the above embodiments can be combined in any suitable manner without contradiction, and the invention is not described in any way for the possible combinations in order to avoid unnecessary repetition.
In addition, any combination of the various embodiments of the present invention can be made, and the same should be considered as the disclosure of the present invention as long as the idea of the present invention is not violated.
Claims (7)
1. A welding method of a tantalum target assembly is characterized by comprising the following steps: carrying out fusion jetting treatment on the tantalum target material with the welding surface provided with the threads, carrying out sand blasting treatment on the welding surface of the back plate, and then carrying out hot isostatic pressing welding on the tantalum target material subjected to fusion jetting treatment and the back plate subjected to sand blasting treatment to obtain a tantalum target material assembly;
the depth of the thread is 2-4 mm; the pitch of the threads is 0.6-0.8 mm; the roughness of the welding surface of the backboard after sand blasting treatment is 5-7 mu m; the temperature of the hot isostatic pressing welding is 500-700 ℃;
the area of the thread occupying the welding surface of the tantalum target material is 55-80% of the area of the welding surface of the tantalum target material; the metal source for the meltallizing treatment is 20-100 mu m aluminum powder; the roughness of the welding surface of the target after the fusion jetting treatment is 10-25 mu m.
2. The welding method of claim 1, wherein the current of the meltblowing process is 240-260A.
3. The welding method of claim 1, wherein the voltage of said meltdown process is 30-45V.
4. The welding method according to claim 1, wherein the sand material in the sand blasting is a mixture of 24# white corundum and 26# white corundum.
5. The welding method according to claim 4, wherein the mass ratio of the No. 24 white corundum to the No. 26 white corundum in the sand is 1: 1.
6. The welding method of claim 1, wherein said hot isostatic pressing welding is carried out for a holding time of 3-4 hours.
7. The welding method of claim 1, wherein said hot isostatic pressing welding is performed at a pressure of 80-120 MPa.
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| CN113846299A (en) * | 2021-07-26 | 2021-12-28 | 宁波江丰电子材料股份有限公司 | Method for processing tantalum target material reverse sputtering layer |
| CN113878221A (en) * | 2021-11-16 | 2022-01-04 | 宁波江丰电子材料股份有限公司 | Method for improving welding quality of tungsten target |
| CN115464293A (en) * | 2022-09-29 | 2022-12-13 | 宁波江丰电子材料股份有限公司 | Welding method for spliced niobium target |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102500909A (en) * | 2011-10-26 | 2012-06-20 | 余姚康富特电子材料有限公司 | Welding method of target and back plate |
| CN105904346A (en) * | 2016-05-31 | 2016-08-31 | 刘洪建 | Surface treatment process for hull steel |
| CN108608105A (en) * | 2016-12-09 | 2018-10-02 | 宁波江丰电子材料股份有限公司 | The forming method of target material assembly |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6579431B1 (en) * | 1998-01-14 | 2003-06-17 | Tosoh Smd, Inc. | Diffusion bonding of high purity metals and metal alloys to aluminum backing plates using nickel or nickel alloy interlayers |
| CN101279401B (en) * | 2008-05-28 | 2010-08-04 | 北京有色金属研究总院 | Pressure welding method of large-area target material |
| CN101494165A (en) * | 2009-02-18 | 2009-07-29 | 颀中科技（苏州）有限公司 | Surface treating technique for silicon wafer clip for splash plating |
| CN102011085B (en) * | 2010-10-29 | 2013-05-01 | 宁波江丰电子材料有限公司 | Method for processing surface of attachment-resisting plate |
| CN110369897B (en) * | 2019-08-06 | 2021-07-09 | 宁波江丰电子材料股份有限公司 | Welding method for target and back plate |
-
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102500909A (en) * | 2011-10-26 | 2012-06-20 | 余姚康富特电子材料有限公司 | Welding method of target and back plate |
| CN105904346A (en) * | 2016-05-31 | 2016-08-31 | 刘洪建 | Surface treatment process for hull steel |
| CN108608105A (en) * | 2016-12-09 | 2018-10-02 | 宁波江丰电子材料股份有限公司 | The forming method of target material assembly |
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