KR20170107094A - 광학적 메트롤로지 및 센서 디바이스를 이용한 에칭 프로세스 제어 방법 및 시스템 - Google Patents

광학적 메트롤로지 및 센서 디바이스를 이용한 에칭 프로세스 제어 방법 및 시스템 Download PDF

Info

Publication number
KR20170107094A
KR20170107094A KR1020177025199A KR20177025199A KR20170107094A KR 20170107094 A KR20170107094 A KR 20170107094A KR 1020177025199 A KR1020177025199 A KR 1020177025199A KR 20177025199 A KR20177025199 A KR 20177025199A KR 20170107094 A KR20170107094 A KR 20170107094A
Authority
KR
South Korea
Prior art keywords
etch
etching
measurement
optical metrology
stage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020177025199A
Other languages
English (en)
Korean (ko)
Inventor
마누엘 마드리아가
신강 티안
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20170107094A publication Critical patent/KR20170107094A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67276—Production flow monitoring, e.g. for increasing throughput
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Automation & Control Theory (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
KR1020177025199A 2011-02-17 2012-02-17 광학적 메트롤로지 및 센서 디바이스를 이용한 에칭 프로세스 제어 방법 및 시스템 Ceased KR20170107094A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/029,349 US8193007B1 (en) 2011-02-17 2011-02-17 Etch process control using optical metrology and sensor devices
US13/029,349 2011-02-17
PCT/US2012/025746 WO2012112959A1 (en) 2011-02-17 2012-02-17 Etch process control using optical metrology and sensor devices

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020137024624A Division KR20140006039A (ko) 2011-02-17 2012-02-17 광학적 메트롤로지 및 센서 디바이스를 이용한 에칭 프로세스 제어 방법 및 시스템

Publications (1)

Publication Number Publication Date
KR20170107094A true KR20170107094A (ko) 2017-09-22

Family

ID=46148020

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020137024624A Ceased KR20140006039A (ko) 2011-02-17 2012-02-17 광학적 메트롤로지 및 센서 디바이스를 이용한 에칭 프로세스 제어 방법 및 시스템
KR1020177025199A Ceased KR20170107094A (ko) 2011-02-17 2012-02-17 광학적 메트롤로지 및 센서 디바이스를 이용한 에칭 프로세스 제어 방법 및 시스템

Family Applications Before (1)

Application Number Title Priority Date Filing Date
KR1020137024624A Ceased KR20140006039A (ko) 2011-02-17 2012-02-17 광학적 메트롤로지 및 센서 디바이스를 이용한 에칭 프로세스 제어 방법 및 시스템

Country Status (5)

Country Link
US (1) US8193007B1 (enExample)
JP (1) JP6019043B2 (enExample)
KR (2) KR20140006039A (enExample)
TW (1) TWI464818B (enExample)
WO (1) WO2012112959A1 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8445296B2 (en) * 2011-07-22 2013-05-21 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and methods for end point determination in reactive ion etching
US9287097B2 (en) * 2011-11-30 2016-03-15 Sony Corporation Predicting ultraviolet ray damage with visible wavelength spectroscopy during a semiconductor manufacturing process
US9875946B2 (en) 2013-04-19 2018-01-23 Kla-Tencor Corporation On-device metrology
WO2015049087A1 (en) 2013-10-02 2015-04-09 Asml Netherlands B.V. Methods & apparatus for obtaining diagnostic information relating to an industrial process
US10217681B1 (en) * 2014-08-06 2019-02-26 American Air Liquide, Inc. Gases for low damage selective silicon nitride etching
US20160240366A1 (en) * 2015-02-17 2016-08-18 Infineon Technologies Ag Processing of Semiconductor Devices
US10386829B2 (en) * 2015-09-18 2019-08-20 Kla-Tencor Corporation Systems and methods for controlling an etch process
US10192763B2 (en) * 2015-10-05 2019-01-29 Applied Materials, Inc. Methodology for chamber performance matching for semiconductor equipment
US10372114B2 (en) * 2016-10-21 2019-08-06 Kla-Tencor Corporation Quantifying and reducing total measurement uncertainty
WO2018163396A1 (ja) * 2017-03-10 2018-09-13 三菱電機株式会社 半導体製造装置および半導体製造方法
US10784174B2 (en) * 2017-10-13 2020-09-22 Lam Research Corporation Method and apparatus for determining etch process parameters
US11164768B2 (en) * 2018-04-27 2021-11-02 Kla Corporation Process-induced displacement characterization during semiconductor production
JP2020181959A (ja) 2019-04-26 2020-11-05 東京エレクトロン株式会社 学習方法、管理装置および管理プログラム
JP7413081B2 (ja) * 2020-02-28 2024-01-15 東京エレクトロン株式会社 基板処理システム
GB202010471D0 (en) * 2020-07-08 2020-08-19 Univ Exeter Control of processing equipment
US12106984B2 (en) * 2021-11-23 2024-10-01 Applied Materials, Inc. Accelerating preventative maintenance recovery and recipe optimizing using machine-learning based algorithm
US20230163001A1 (en) * 2021-11-23 2023-05-25 Applied Materials, Inc. Method to eliminate first wafer effects on semiconductor process chambers
US12400888B2 (en) * 2022-03-31 2025-08-26 Tokyo Electron Limited Data fusion of multiple sensors
CN120019479A (zh) * 2023-09-14 2025-05-16 株式会社日立高新技术 等离子处理装置以及等离子处理方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5288367A (en) 1993-02-01 1994-02-22 International Business Machines Corporation End-point detection
US5658423A (en) 1995-11-27 1997-08-19 International Business Machines Corporation Monitoring and controlling plasma processes via optical emission using principal component analysis
US5862060A (en) 1996-11-22 1999-01-19 Uop Llc Maintenance of process control by statistical analysis of product optical spectrum
US6943900B2 (en) 2000-09-15 2005-09-13 Timbre Technologies, Inc. Generation of a library of periodic grating diffraction signals
US6785638B2 (en) 2001-08-06 2004-08-31 Timbre Technologies, Inc. Method and system of dynamic learning through a regression-based library generation process
US7216045B2 (en) 2002-06-03 2007-05-08 Timbre Technologies, Inc. Selection of wavelengths for integrated circuit optical metrology
US6979578B2 (en) 2002-08-13 2005-12-27 Lam Research Corporation Process endpoint detection method using broadband reflectometry
US7352478B2 (en) 2002-12-20 2008-04-01 International Business Machines Corporation Assessment and optimization for metrology instrument
US20040267397A1 (en) 2003-06-27 2004-12-30 Srinivas Doddi Optical metrology of structures formed on semiconductor wafer using machine learning systems
US7158221B2 (en) * 2003-12-23 2007-01-02 Applied Materials, Inc. Method and apparatus for performing limited area spectral analysis
US7065423B2 (en) * 2004-07-08 2006-06-20 Timbre Technologies, Inc. Optical metrology model optimization for process control
KR20060005830A (ko) 2004-07-14 2006-01-18 삼성전자주식회사 통합 슬롯이 탑재된 인쇄 회로 기판
US20060112796A1 (en) 2004-11-30 2006-06-01 Chang-Ying Chen Screwdriver with teethed head
US7467064B2 (en) 2006-02-07 2008-12-16 Timbre Technologies, Inc. Transforming metrology data from a semiconductor treatment system using multivariate analysis
US7596422B2 (en) * 2007-01-12 2009-09-29 Tokyo Electron Limited Determining one or more profile parameters of a structure using optical metrology and a correlation between profile models and key profile shape variables
CN101675495B (zh) * 2007-02-02 2011-12-14 雷克萨斯研究有限公司 用于测量等离子体刻蚀工艺的工艺参数的方法和装置
US7591600B2 (en) * 2007-02-23 2009-09-22 Tokyo Electron Limited Method and system for monitoring photolithography processing based on a batch change in light sensitive material
US7742177B2 (en) 2008-01-22 2010-06-22 Tokyo Electron Limited Noise-reduction metrology models
US7589845B1 (en) * 2008-03-27 2009-09-15 Tokyo Electron Limited Process control using an optical metrology system optimized with signal criteria
US7761250B2 (en) 2008-06-18 2010-07-20 Tokyo Electron Limited Optical metrology system optimized with design goals
US8173451B1 (en) * 2011-02-16 2012-05-08 Tokyo Electron Limited Etch stage measurement system

Also Published As

Publication number Publication date
TWI464818B (zh) 2014-12-11
TW201241949A (en) 2012-10-16
JP6019043B2 (ja) 2016-11-02
JP2014514727A (ja) 2014-06-19
US8193007B1 (en) 2012-06-05
KR20140006039A (ko) 2014-01-15
WO2012112959A1 (en) 2012-08-23

Similar Documents

Publication Publication Date Title
US8193007B1 (en) Etch process control using optical metrology and sensor devices
US8173451B1 (en) Etch stage measurement system
JP7269296B2 (ja) 方法およびエッチングシステム
CN104736744B (zh) 使用多变量分析的等离子体蚀刻终点检测
JP3708031B2 (ja) プラズマ処理装置および処理方法
CN108281346B (zh) 从光谱的时间序列进行特征提取以控制工艺结束点的方法
KR101046918B1 (ko) 식각공정을 모니터링하기 위한 방법 및 시스템
US7972483B2 (en) Method of fault detection for material process system
TWI528452B (zh) Plasma processing device and plasma processing method
TWI773529B (zh) 電漿處理裝置及電漿處理方法
JP4660091B2 (ja) 材料処理システムおよび材料処理システムを特徴づける方法
US8173450B1 (en) Method of designing an etch stage measurement system
US20240255858A1 (en) In situ sensor and logic for process control
JP2006074067A (ja) プラズマ処理装置および処理方法
JP4344674B2 (ja) プラズマ処理装置
Sarfaty et al. Real-time determination of plasma etch-rate selectivity
Barna et al. In Situ Metrology
WO2003038872A2 (en) Method and system for monitoring a semiconductor wafer plasma etch process

Legal Events

Date Code Title Description
A107 Divisional application of patent
PA0104 Divisional application for international application

Comment text: Divisional Application for International Patent

Patent event code: PA01041R01D

Patent event date: 20170907

Application number text: 1020137024624

Filing date: 20130916

PG1501 Laying open of application
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20171011

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20180116

Patent event code: PE09021S01D

AMND Amendment
E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20190612

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20180116

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I

E601 Decision to refuse application
E801 Decision on dismissal of amendment
PE0601 Decision on rejection of patent

Patent event date: 20190718

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20180116

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I

PE0801 Dismissal of amendment

Patent event code: PE08012E01D

Comment text: Decision on Dismissal of Amendment

Patent event date: 20190718

Patent event code: PE08011R01I

Comment text: Amendment to Specification, etc.

Patent event date: 20190709

Patent event code: PE08011R01I

Comment text: Amendment to Specification, etc.

Patent event date: 20190416