KR20170107094A - 광학적 메트롤로지 및 센서 디바이스를 이용한 에칭 프로세스 제어 방법 및 시스템 - Google Patents

광학적 메트롤로지 및 센서 디바이스를 이용한 에칭 프로세스 제어 방법 및 시스템 Download PDF

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KR20170107094A
KR20170107094A KR1020177025199A KR20177025199A KR20170107094A KR 20170107094 A KR20170107094 A KR 20170107094A KR 1020177025199 A KR1020177025199 A KR 1020177025199A KR 20177025199 A KR20177025199 A KR 20177025199A KR 20170107094 A KR20170107094 A KR 20170107094A
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South Korea
Prior art keywords
etch
etching
measurement
optical metrology
stage
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English (en)
Korean (ko)
Inventor
마누엘 마드리아가
신강 티안
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도쿄엘렉트론가부시키가이샤
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Publication of KR20170107094A publication Critical patent/KR20170107094A/ko
Ceased legal-status Critical Current

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    • H01L21/67069—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01L21/3065—
    • H01L21/67253—
    • H01L21/67276—
    • H01L22/12—
    • H01L22/20—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0612—Production flow monitoring, e.g. for increasing throughput
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Automation & Control Theory (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
KR1020177025199A 2011-02-17 2012-02-17 광학적 메트롤로지 및 센서 디바이스를 이용한 에칭 프로세스 제어 방법 및 시스템 Ceased KR20170107094A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/029,349 2011-02-17
US13/029,349 US8193007B1 (en) 2011-02-17 2011-02-17 Etch process control using optical metrology and sensor devices
PCT/US2012/025746 WO2012112959A1 (en) 2011-02-17 2012-02-17 Etch process control using optical metrology and sensor devices

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020137024624A Division KR20140006039A (ko) 2011-02-17 2012-02-17 광학적 메트롤로지 및 센서 디바이스를 이용한 에칭 프로세스 제어 방법 및 시스템

Publications (1)

Publication Number Publication Date
KR20170107094A true KR20170107094A (ko) 2017-09-22

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020177025199A Ceased KR20170107094A (ko) 2011-02-17 2012-02-17 광학적 메트롤로지 및 센서 디바이스를 이용한 에칭 프로세스 제어 방법 및 시스템
KR1020137024624A Ceased KR20140006039A (ko) 2011-02-17 2012-02-17 광학적 메트롤로지 및 센서 디바이스를 이용한 에칭 프로세스 제어 방법 및 시스템

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020137024624A Ceased KR20140006039A (ko) 2011-02-17 2012-02-17 광학적 메트롤로지 및 센서 디바이스를 이용한 에칭 프로세스 제어 방법 및 시스템

Country Status (5)

Country Link
US (1) US8193007B1 (enExample)
JP (1) JP6019043B2 (enExample)
KR (2) KR20170107094A (enExample)
TW (1) TWI464818B (enExample)
WO (1) WO2012112959A1 (enExample)

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US8445296B2 (en) * 2011-07-22 2013-05-21 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and methods for end point determination in reactive ion etching
US9287097B2 (en) * 2011-11-30 2016-03-15 Sony Corporation Predicting ultraviolet ray damage with visible wavelength spectroscopy during a semiconductor manufacturing process
US9875946B2 (en) * 2013-04-19 2018-01-23 Kla-Tencor Corporation On-device metrology
KR101900340B1 (ko) 2013-10-02 2018-09-20 에이에스엠엘 네델란즈 비.브이. 산업 공정과 관련된 진단 정보를 얻는 방법 및 장치
US10217681B1 (en) * 2014-08-06 2019-02-26 American Air Liquide, Inc. Gases for low damage selective silicon nitride etching
US20160240366A1 (en) * 2015-02-17 2016-08-18 Infineon Technologies Ag Processing of Semiconductor Devices
US10386829B2 (en) * 2015-09-18 2019-08-20 Kla-Tencor Corporation Systems and methods for controlling an etch process
US10192763B2 (en) * 2015-10-05 2019-01-29 Applied Materials, Inc. Methodology for chamber performance matching for semiconductor equipment
US10372114B2 (en) * 2016-10-21 2019-08-06 Kla-Tencor Corporation Quantifying and reducing total measurement uncertainty
CN110383428B (zh) * 2017-03-10 2023-04-04 三菱电机株式会社 半导体制造装置以及半导体制造方法
US10784174B2 (en) * 2017-10-13 2020-09-22 Lam Research Corporation Method and apparatus for determining etch process parameters
US11164768B2 (en) * 2018-04-27 2021-11-02 Kla Corporation Process-induced displacement characterization during semiconductor production
JP2020181959A (ja) 2019-04-26 2020-11-05 東京エレクトロン株式会社 学習方法、管理装置および管理プログラム
JP7413081B2 (ja) * 2020-02-28 2024-01-15 東京エレクトロン株式会社 基板処理システム
GB202010471D0 (en) * 2020-07-08 2020-08-19 Univ Exeter Control of processing equipment
US20230163001A1 (en) * 2021-11-23 2023-05-25 Applied Materials, Inc. Method to eliminate first wafer effects on semiconductor process chambers
US12106984B2 (en) * 2021-11-23 2024-10-01 Applied Materials, Inc. Accelerating preventative maintenance recovery and recipe optimizing using machine-learning based algorithm
CN114724943A (zh) * 2022-03-18 2022-07-08 福建晶安光电有限公司 一种等离子体蚀刻方法及系统
US12400888B2 (en) * 2022-03-31 2025-08-26 Tokyo Electron Limited Data fusion of multiple sensors
WO2025057374A1 (ja) * 2023-09-14 2025-03-20 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
WO2026047926A1 (ja) * 2024-08-29 2026-03-05 株式会社日立ハイテク プラズマ処理・制御装置およびプラズマ処理・制御方法

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US5288367A (en) 1993-02-01 1994-02-22 International Business Machines Corporation End-point detection
US5658423A (en) 1995-11-27 1997-08-19 International Business Machines Corporation Monitoring and controlling plasma processes via optical emission using principal component analysis
US5862060A (en) 1996-11-22 1999-01-19 Uop Llc Maintenance of process control by statistical analysis of product optical spectrum
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US7761250B2 (en) 2008-06-18 2010-07-20 Tokyo Electron Limited Optical metrology system optimized with design goals
US8173451B1 (en) * 2011-02-16 2012-05-08 Tokyo Electron Limited Etch stage measurement system

Also Published As

Publication number Publication date
JP2014514727A (ja) 2014-06-19
WO2012112959A1 (en) 2012-08-23
TWI464818B (zh) 2014-12-11
US8193007B1 (en) 2012-06-05
TW201241949A (en) 2012-10-16
JP6019043B2 (ja) 2016-11-02
KR20140006039A (ko) 2014-01-15

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