KR20170099557A - Light emitting device package and lighting apparatus including the package - Google Patents

Abstract

The present invention relates to a light emitting element package capable of maintaining light extraction efficiency while having excellent rigidity, and a lighting apparatus including the same. The light emitting element package according to an embodiment of the present invention comprises: first and second lead frames; an inner body electrically separating the first and second lead frames from each other and defining a cavity with the first and second lead frames; a light source disposed in at least one of the first and second lead frames in the cavity; and an outer body surrounding an outer side of the inner body and having a material different from the inner body.

Description

TECHNICAL FIELD [0001] The present invention relates to a light emitting device package and a lighting apparatus including the light emitting device package.

An embodiment relates to a light emitting device package and a lighting apparatus including the same.

Light emitting diodes (LEDs) are a kind of semiconductor devices that convert the electricity into infrared rays or light by using the characteristics of compound semiconductors, exchange signals, or use as a light source.

III-V nitride semiconductors (group III-V nitride semiconductors) are attracting attention as a core material for light emitting devices such as light emitting diodes (LEDs) and laser diodes (LDs) due to their physical and chemical properties.

Since such a light emitting diode does not contain environmentally harmful substances such as mercury (Hg) used in conventional lighting devices such as incandescent lamps and fluorescent lamps, it has excellent environmental friendliness, and has advantages such as long life and low power consumption characteristics. .

A conventional light emitting device package including a light emitting diode has a problem in that cracks are generated due to its low rigidity.

The embodiment provides a light emitting device package capable of maintaining light extraction efficiency while having excellent rigidity and a lighting apparatus including the same.

A light emitting device package according to an embodiment includes first and second lead frames; An inner body electrically isolating the first and second lead frames from each other and defining a cavity with the first and second lead frames; A light source disposed in at least one of the first and second lead frames in the cavity; And an outer body surrounding the outer side of the inner body and having a material different from that of the inner body.

For example, each of the inner body and the outer body may comprise EMC.

For example, the inner body may include a white EMC, and the outer body may include a black EMC.

For example, the inner body may include a lower portion that electrically separates the first and second lead frames from each other; And a side extending from the lower portion to form a side surface of the cavity.

For example, the inner body may further include a reflective protrusion penetrating the upper surface of the outer body. The reflective protrusion may divide the upper surface of the outer body into two halves or four halves.

For example, the reflective projection may have a planar shape that is symmetrical.

For example, the lower portion of the inner body may include a plurality of through holes, the first lead frame may include a first lower lead frame inserted and disposed in a part of the plurality of through holes; And a first upper lead frame disposed on the first lower lead frame and forming a part of a bottom surface of the cavity, wherein the second lead frame has a second lower side Lead frame; And a second upper lead frame disposed on the second lower lead frame, the second upper lead frame forming a top portion of the bottom surface of the cavity.

For example, the first lower lead frame and the first upper lead frame may be integrated, and the second lower lead frame and the second upper lead frame may be integrally formed.

For example, the first upper lead frame, the second upper lead frame, and the lower portion of the inner body may form the same horizontal surface corresponding to the bottom surface of the cavity.

For example, the side portion of the inner body may include at least one inner fastening hole, and the outer body may include at least one outer fastening hole communicating with the inner fastening hole, wherein each of the first and second lead frames And a fastening protrusion that is embedded in the inner fastening hole and the outer fastening hole to fasten the inner body and the outer body.

For example, the at least one inner fastening hole may include a plurality of inner fastening holes spaced apart from each other by a predetermined distance, and the at least one external fastening hole may include a plurality of outer fastening holes spaced apart from each other by a predetermined distance have.

For example, the light emitting device package may further include a molding member embedded in the cavity to surround the light source.

For example, the light emitting device package may further include an upper structure disposed to cover the cavity.

For example, the inner body and the outer body may have a planar shape that is symmetrical.

The lighting apparatus according to another embodiment may include the light emitting device package.

The light emitting device package and the lighting device including the same according to the embodiment of the present invention can be realized by a white EMC having a reflectivity higher than that of a black EMC and an outer body having a black EMC superior to a white EMC, But it can have strong rigidity.

1 is a top perspective view of a light emitting device package according to an embodiment.
2 is a top exploded perspective view of the light emitting device package shown in FIG.
3 is a bottom exploded perspective view of the light emitting device package shown in FIG.
4 is a plan view of the light emitting device package shown in Fig.
5 is a bottom view of the light emitting device package shown in Fig.
6 is a top perspective view of the light emitting device package shown in FIG.
7 and 8 show cross-sectional views of the light emitting device package shown in Fig.
9 is a top perspective view of a light emitting device package according to another embodiment.
10 is a top perspective view of the light emitting device package shown in FIG.
11A to 11C are sectional views of various embodiments of light sources included in the light emitting device package according to the embodiment.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings in order to facilitate understanding of the present invention. However, the embodiments according to the present invention can be modified into various other forms, and the scope of the present invention should not be construed as being limited to the embodiments described below. Embodiments of the invention are provided to more fully describe the present invention to those skilled in the art.

In the description of the embodiment according to the present invention, in the case of being described as being formed on the "upper" or "on or under" of each element, on or under includes both elements being directly contacted with each other or one or more other elements being indirectly formed between the two elements. Also, when expressed as "on" or "on or under", it may include not only an upward direction but also a downward direction with respect to one element.

It is also to be understood that the terms "first" and "second," "upper / upper / upper," and "lower / lower / lower" But may be used to distinguish one entity or element from another entity or element, without necessarily requiring or implying an order.

Hereinafter, the light emitting device packages 100A and 100B according to the embodiments will be described using a Cartesian coordinate system, but the embodiments are not limited thereto. That is, according to the Cartesian coordinate system, the x-axis, the y-axis and the z-axis are orthogonal to each other, but the embodiment is not limited to this. That is, the x-axis, the y-axis, and the z-axis may cross each other instead of being orthogonal.

FIG. 1 is an upper perspective view of a light emitting device package 100A according to an embodiment, FIG. 2 is an exploded upper perspective view of the light emitting device package 100A shown in FIG. 1, and FIG. 3 is a cross- FIG. 4 is a plan view of the light emitting device package 100A shown in FIG. 1, and FIG. 5 is a bottom view of the light emitting device package 100A shown in FIG. And FIG. 6 shows an upper partial assembled perspective view of the light emitting device package 100A shown in FIG. 1, and FIGS. 7 and 8 show sectional views of the light emitting device package 100A shown in FIG.

1 to 8, a light emitting device package 100A according to an embodiment includes first and second lead frames 112 and 114, light sources 122 and 124, a zener diode 126, The inner body 140A, the outer body 150A, the molding member 160, and the superstructure 170. The fourth wire 132 to 138, the inner body 140A, the outer body 150A, 1 to 6, the illustration of the molding member 160 and the superstructure 170 is omitted.

The inner body 140A electrically isolates the first and second lead frames 112 and 114 from each other and defines a cavity with the first and second lead frames 112 and 114 .

Further, the inner body 140A may include a lower portion 140AL and a side portion 140AS. The lower portion 140AL of the inner body 140A serves to electrically isolate the first and second lead frames 112 and 114 from each other. To this end, a lower portion 140AL of the inner body 140A may be disposed between the first and second lead frames 112 and 114. [ The side portion 140AS of the inner body 140A may extend from the lower portion 140L to form a side surface of the cavity C. [

When the side portion 140AS of the inner body 140A has an inclined surface, the light emitted from the light sources 122 and 124 is reflected on the inclined surface and travels upward, thereby increasing the light extraction efficiency.

FIG. 9 is an upper perspective view of the light emitting device package 100B according to another embodiment, and FIG. 10 is a top partial perspective view of the light emitting device package 100B shown in FIG.

The inner body 140A may further include reflective protrusions 140AP and 140BP passing through the upper surface of the outer body 150A. For example, as illustrated in FIGS. 1 to 6, the reflective protrusion 140AP protrudes in the first outward direction (for example, the x-axis direction) of the light emitting device package 100A, Can be divided into two. Alternatively, as shown in Figs. 9 and 10, the reflective projection 140BP may protrude in a second outward direction (e.g., in the x- and y-axis directions) to divide the upper surface of the outer body 150A into quarters have. However, the embodiment is not limited to this. That is, according to another embodiment, it is needless to say that the inner bodies 140A and 140B can divide the upper surface of the outer body 150A into three equal parts or more than five equal parts.

The reflective protrusions 140AP, 140BP illustrated in Figs. 1 to 10 may have a symmetrical planar shape. That is, the reflective projection 140AP shown in FIGS. 1 to 6 has a planar shape that is symmetrical in the x-axis direction, and the reflective projection 140BP shown in Figs. 9 and 10 is symmetric in the x- As shown in FIG.

The light emitting device package 100B shown in Figs. 9 and 10 is similar to the light emitting device package 100B shown in Figs. 1 to 8 except for the difference that the reflective protrusion 140AP shown in Figs. 1 to 6 has a different type of reflective protrusion 140BP. Emitting device package 100A shown in Fig. Therefore, the description of the light emitting device package 100A shown in Figs. 1 to 8 can be applied to the light emitting device package 100B shown in Figs. 9 and 10 below.

The lower portion 140AL of the inner body 140A may include a plurality of through holes. As illustrated, the lower portion 140AL of the inner body 140A may include first through third through holes TH1, TH2, and TH3.

The first and second lead frames 112 and 114 can be electrically separated from each other by the inner body 140A, as described above. The first and second lead frames 112 and 114 serve to supply power to the light sources 122 and 124. The first and second lead frames 112 and 114 may reflect the light generated by the light sources 122 and 124 to increase the light efficiency and may be formed of the heat generated from the light sources 122 and 124 To the outside.

The first lead frame 112 may include a first lower lead frame 112B and a first upper lead frame 112T. The first lower lead frame 112B may be inserted and disposed in a part of the plurality of through holes (for example, the first through hole TH1). The first upper lead frame 112T is disposed on the first lower lead frame 112B and can form part of the bottom surface of the cavity C. [

In addition, the first lower lead frame 112B and the first upper lead frame 112T may be separate from each other as illustrated, or may be integral with each other as illustrated.

Unlike the first lower lead frame 112B inserted into the first through hole TH1, the first upper lead frame 112T may not be inserted into the first through hole TH1, but the embodiment is not limited thereto . The first upper lead frame 112T may have a larger planar area than the first lower lead frame 112B, but the embodiment is not limited to this.

In addition, the second lead frame 114 may include a second lower lead frame 114B and a second upper lead frame 114T. The second lower lead frame 114B may be inserted and disposed in a plurality of through holes (for example, second and third through holes TH2 and TH3). 3, the second lower lead frame 114B may include a second-1 lower lead frame 114B-1 and a second -2 lower lead frame 114B-2 that are separate from each other . The second-second lower lead frame 114B-1 is inserted into the second through hole TH2 and the second-second lower lead frame 114B-2 is inserted into the third through hole TH3, . However, the embodiment is not limited to this. According to another embodiment, unlike the one shown in Fig. 3, the second lower lead frame 114B can be one. That is, the 2-1 and 2-2 lower lead frames 114B-1 and 114B-2 may be integrated. If the first and second lower lead frames 114B-1 and 114B-2 are integrated, the through holes (not shown) in which the second and third through holes TH2 and TH3 are integrated with each other, The second lower lead frame 114B may be inserted and arranged.

The second upper lead frame 114T is disposed on the second lower lead frame 114B and may form a bottom portion of the bottom surface of the cavity C. [

In addition, the second lower lead frame 114B and the second upper lead frame 114T may be separate from each other as illustrated, or may be integral with each other as illustrated.

Unlike the second-first and second-second lower lead frames 114B-1 and 114B-2, which are respectively inserted into the second and third through holes TH2 and TH3, the second upper lead frame 114T, 2 and the third through holes TH2 and TH3, but the embodiment is not limited thereto. The second upper lead frame 114T may have a larger planar area than the second lower lead frame 114B, but the embodiment is not limited thereto.

6, the first upper lead frame 112T, the second upper lead frame 114T and the lower portion 140AL of the inner body 140A form the same horizontal surface corresponding to the bottom surface of the cavity C .

Each of the first and second lead frames 112 and 114 may be embodied as a material having electrical conductivity, but embodiments are not limited to specific materials of the first and second lead frames 112 and 114. Each of the first and second lead frames 112 and 114 may include at least one of copper (Cu), nickel (Ni), silver (Ag), and gold (Au). For example, the base material of each of the first and second lead frames 112 and 114 is copper (Cu), and the rough portion of the base is primarily made of copper (Cu) or nickel (Ni) The first and second lead frames 112 and 114 can be formed by main plating using silver (Ag) or gold (Au) after bottom plating. Here, the term "undercoating" refers to a process in which the surfaces of the bases of the first and second lead frames 112, 114 can be rough surfaces on which bone and acid are repeated, and filling the bone with copper (Cu) or nickel (Ni) .

Here, the first lower lead frame 112B and the second lower lead frame 114B may be mounted on a printed circuit board (not shown) disposed below the light emitting device package 100A.

The light sources 122 and 124 may be disposed in at least one of the first and second lead frames 112 and 114 in the cavity C. [

Here, the light sources 122 and 124 may be a light emitting diode (LED) or a laser diode (LD), and the embodiments are not limited to the shapes of the light sources 122 and 124.

In the case of Figs. 1 to 10, two light sources 122 and 124 are illustrated as being arranged, but the embodiment is not limited to the number of light sources 122 and 124. That is, according to another embodiment, only one light source may be disposed, or three or more light sources may be disposed.

 As shown in FIGS. 1 through 10, each of the light sources 122 and 124 may have a horizontal bonding structure, but the embodiments are not limited thereto. That is, according to another embodiment, each of the light sources 122 and 124 may have a vertical bonding structure or a flip chip bonding structure.

Although the light sources 122 and 124 are shown as being disposed on the second lead frame 114 in the case of FIGS. 1 to 10, the embodiments are not limited thereto. That is, according to another embodiment, the light sources 122 and 124 may be disposed on the first lead frame 112.

11A to 11C are sectional views of various embodiments 200A, 200B and 200C of the light sources 122 and 124 included in the light emitting device package 100A and 100B according to the embodiment.

Each of the light sources 122 and 124 shown in FIGS. 1 to 10 may have a horizontal bonding structure as shown in FIG. 11A. However, according to another embodiment, each of the light sources 122 and 124 may have a vertical bonding structure as shown in FIG. 11B, or may have a flip chip bonding structure as shown in FIG. 11C.

The light sources 200A, 200B, and 200C shown in FIGS. 11A to 11C may include the light emitting structures 220A, 250, and 220B.

The light emitting structures 220A, 250 and 220B are formed on the first conductive semiconductor layers 222A, 252 and 222B, the active layers 224A, 254 and 224B and the second conductive semiconductor layers 226A and 226B, respectively, 256, and 226B. The light emitting structures 220A, 250, and 220B may have the same or different constituent materials, which will be described as follows.

First, a light source 200A having a horizontal bonding structure shown in FIG. 11A may include a substrate 210A, a light emitting structure 220A, and first and second electrodes 232A and 234A.

The substrate 210A may comprise a conductive material or a non-conductive material. For example, the substrate 210A may include at least one of sapphire (Al ₂ O ₃ ), GaN, SiC, ZnO, GaP, InP, Ga ₂ O ₃ , GaAs and Si.

For example, when the substrate 210A is a silicon substrate, it may have a (111) crystal plane as a principal plane. In the case of a silicon substrate, the light emitting structure 220A is easily cracked due to a difference in thermal expansion coefficient between the silicon and nitride-based light emitting structure 220A and the substrate 210A and lattice mismatching, May occur. In order to prevent this, a buffer layer (or a transition layer) (not shown) may be further disposed between the substrate 210A and the light emitting structure 220A. The buffer layer may include, but is not limited to, at least one material selected from the group consisting of Al, In, N, and Ga, for example. Further, the buffer layer may have a single layer structure or a multi-layer structure.

The first conductive type semiconductor layer 222A is disposed on the substrate 210A. The first conductive semiconductor layer 222A may be formed of a compound semiconductor such as a group III-V or a group II-VI doped with a first conductive dopant, and may be doped with a first conductive dopant. When the first conductivity type semiconductor layer 222A is an n-type semiconductor layer, the first conductivity type dopant may include Si, Ge, Sn, Se, and Te as n-type dopants, but is not limited thereto.

For example, the first conductivity type semiconductor layer 222A may have a composition formula of Al _x In _y Ga _(1-xy) N (0? X? 1, 0? _Y? 1, 0? _X + Semiconductor material. The first conductive semiconductor layer 222A may include one or more of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP and InP.

The active layer 224A is disposed on the first conductivity type semiconductor layer 222A. The active layer 224A is formed such that electrons (or holes) injected through the first conductivity type semiconductor layer 222A and holes (or electrons) injected through the second conductivity type semiconductor layer 226A meet with each other, 224A that emits light having energy determined by the energy band inherent to the material.

The active layer 224A may be formed of at least one of a single well structure, a multi-well structure, a single quantum well structure, a multi quantum well (MQW) structure, a quantum-wire structure, or a quantum dot structure Can be formed.

The well layer / barrier layer of the active layer 224A may be formed of any one or more pairs of InGaN / GaN, InGaN / InGaN, GaN / AlGaN, InAlGaN / GaN, GaAs (InGaAs) / AlGaAs, GaP But are not limited thereto. The well layer may be formed of a material having a band gap energy lower than the band gap energy of the barrier layer.

A conductive clad layer (not shown) may be formed on and / or below the active layer 224A. The conductive cladding layer may be formed of a semiconductor having a band gap energy higher than the band gap energy of the barrier layer of the active layer 224A. For example, the conductive clad layer may include GaN, AlGaN, InAlGaN, superlattice structure, or the like. Further, the conductive clad layer may be doped with n-type or p-type.

The second conductivity type semiconductor layer 226A is disposed on the active layer 224A. The second conductive semiconductor layer 226A may be formed of a semiconductor compound and may be formed of a compound semiconductor such as a group III-V or II-VI group. For example, the second conductivity type semiconductor layer 226A may be a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + . ≪ / RTI > The second conductivity type semiconductor layer 226A may be doped with a second conductivity type dopant. When the second conductivity type semiconductor layer 226A is a p-type semiconductor layer, the second conductivity type dopant may include Mg, Zn, Ca, Sr, and Ba as a p-type dopant.

The first electrode 232A is formed on the exposed first conductivity type semiconductor layer 222A by mesa etching a part of the second conductivity type semiconductor layer 226A, the active layer 224A and the first conductivity type semiconductor layer 222A . The second electrode 234A may be disposed on the second conductivity type semiconductor layer 226A. For example, the first and second electrodes may be formed of a single layer or a multilayer structure including at least one of aluminum (Al), titanium (Ti), chromium (Cr), nickel (Ni), copper (Cu) (232A, 234A) can be formed.

If the light source 200A shown in FIG. 11A corresponds to the light source 122, the first electrode 232A is electrically connected to the first lead frame 112 by the wire 242, Type semiconductor layer 222A may be electrically connected to the first lead frame 112. [ In this case, the wire 242 may correspond to the first wire 132 shown in Figs.

Alternatively, when the light source 200A shown in FIG. 11A corresponds to the light source 124, the first electrode 232A is electrically connected to another adjacent light source 122 by the wire 242, The semiconductor layer 222A may be electrically connected to another light source 122. [ In this case, the wire 242 may correspond to the second wire 134 shown in Figs. 1 to 10.

11A corresponds to the light source 122, the second electrode 234A is electrically connected to the adjacent other light source 124 by the wire 244, so that the second electrode 234A is electrically connected to the second light source 124. Therefore, The conductive semiconductor layer 226A may be electrically connected to another light source 124. [ In this case, the wire 244 may correspond to the second wire 134 shown in Figs.

Alternatively, when the light source 200A shown in FIG. 11A corresponds to the light source 124, the second electrode 234A is electrically connected to the second lead frame 114 by the wire 234A, The semiconductor layer 226A may be electrically connected to the second lead frame 114. [ Here, the second wire 244 may correspond to the third wire 136 shown in FIGS.

Although not shown, an ohmic contact layer (not shown) may be further disposed between the second conductive type semiconductor layer 226A and the second electrode 234A. When the second conductivity type semiconductor layer 234A is a p-type semiconductor layer, the impurity doping concentration is low and the contact resistance is high, which may result in poor ohmic characteristics. Therefore, in order to improve such ohmic characteristics, . The ohmic contact layer may include at least one of a metal and a transparent conductive oxide (TCO). For example, the ohmic contact layer may have a thickness of about 200 Angstroms and may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO) , IGZO (indium gallium zinc oxide), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IZON ), IGZO (In-Ga ZnO), ZnO, IrOx, RuOx, NiO, RuOx / ITO, Ni / IrOx / Au, and Ni / IrOx / Au / ITO, Ag, Ni, Cr, Ti, , Ir, Sn, In, Ru, Mg, Zn, Pt, Au, and Hf.

Next, a light source 200B having a vertical bonding structure shown in FIG. 11B may include a support substrate 240, a light emitting structure 250, and a first electrode 260. FIG.

The supporting substrate 240 serves to support the light emitting structure 250 and may include a conductive material. This is because the second conductive type semiconductor layer 256 disposed on the supporting substrate 240 is electrically connected to the second lead frame 114 through the supporting substrate 240. The second conductive semiconductor layer 256 is electrically connected to the second lead frame 114 through the supporting substrate 240 when the light source 200B is disposed on the second lead frame 114. [ However, when the light source 200B is disposed on the first lead frame 112, the second conductive type semiconductor layer 256 may be electrically connected to the first lead frame 112 through the support substrate 240. [

For example, the support substrate 240 may include, but is not limited to, at least one of sapphire (Al ₂ O ₃ ), GaN, SiC, ZnO, GaP, InP, Ga ₂ O ₃ , GaAs and Si. If the supporting substrate 240 is of a conductive type, the entirety of the supporting substrate 240 can serve as a second electrode, so that a metal having excellent electrical conductivity can be used, and heat generated when the light source 200B emits light It is possible to use a metal having a high thermal conductivity. The support substrate 240 may be made of a material selected from the group consisting of molybdenum (Mo), silicon (Si), tungsten (W), copper (Cu), and aluminum (Al) In addition, gold (Au), copper alloy (Cu Alloy), nickel (Ni), copper-tungsten (Cu-W), carrier wafers (e.g., GaN, Si, Ge, GaAs, ZnO, SiGe, SiC, SiGe, Ga ₂ O _3, etc.), and the like.

In addition, when the support substrate 240 is formed of a reflective material, light emitted from the light emitting structure 250 may be reflected toward the support substrate 240 without being directed to the top or the side to increase light extraction efficiency. Alternatively, a reflective layer (not shown) may be further disposed between the support substrate 240 and the light emitting structure 250. The reflective layer reflects light emitted from the active layer 254 upward and is disposed on the support substrate 240 and may have a thickness of about 2500 Angstroms (A). For example, the reflective layer may comprise a metal layer comprising aluminum (Al), silver (Ag), nickel (Ni), platinum (Pt), rhodium (Rh) have. Aluminum, silver, or the like can effectively reflect the light generated in the active layer 254, thereby greatly improving the light extraction efficiency of the light source 200B. Further, such a reflective layer may have various light reflection patterns. The light reflection pattern may have a hemispheric embossed shape, but may have an engraved shape or various other shapes.

The second conductive semiconductor layer 256 is disposed on the supporting substrate 240. The second conductive semiconductor layer 256 may be formed of a semiconductor compound. A second conductive semiconductor layer 256 is a Group III -5-group, may be implemented as a compound semiconductor such as a Group 2 -6-group, for example, _{In x Al y Ga 1 -x- y} N (0≤x≤ 1, 0? Y? 1, 0? X + y? 1). If the second conductivity type is p-type, the second conductivity type semiconductor layer 256 may be a p-type dopant including Mg, Zn, Ca, Sr, Ba, and the like.

The active layer 254 is disposed on the second conductivity type semiconductor layer 256. Electrons injected through the first conductive type semiconductor layer 252 and holes injected through the second conductive type semiconductor layer 256 meet with each other in the active layer 254 to form energy bands unique to the active layer 254 Is a layer that emits light having energy determined by the energy.

The active layer 254 may be at least one of a single well structure, a multiple well structure, a single quantum well structure, a multi quantum well (MQW), a quantum-wire structure, or a quantum dot structure Can be formed.

The well layer / barrier layer of the active layer 254 may be formed of any one or more pairs of InGaN / GaN, InGaN / InGaN, GaN / AlGaN, InAlGaN / GaN, GaAs (InGaAs) / AlGaAs, GaP But are not limited thereto. The well layer may be formed of a material having a band gap smaller than the band gap of the barrier layer.

A conductive clad layer (not shown) may be formed on and / or below the active layer 254. The conductive cladding layer may be formed of a semiconductor having a band gap wider than the band gap of the barrier layer of the active layer 254. [ For example, the conductive clad layer may include GaN, AlGaN, InAlGaN, superlattice structure, or the like. Further, the conductive clad layer may be doped with n-type or p-type.

The first conductive semiconductor layer 252 is disposed on the active layer 254. The first conductivity type semiconductor layer 252 may be formed of a Group III-V compound semiconductor doped with the first conductivity type dopant. When the first conductivity type is n-type, the first conductivity type semiconductor layer 252 may be an n-type dopant, Se, < RTI ID = 0.0 > Te. ≪ / RTI >

The first conductivity type semiconductor layer 252 has a composition formula of Al _x In _y Ga _(1-xy) N (0? X? 1, 0? _Y? 1, 0? _X + y? 1) Semiconductor material. The first conductive semiconductor layer 252 may be formed of one or more of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP and InP.

The first electrode 260 is disposed on the first conductive semiconductor layer 252. As described above, since the second conductive type semiconductor layer 256 is electrically connected to the second lead frame 114 through the supporting substrate 240, no wires are required. The first conductive semiconductor layer 252 may be electrically connected to the first lead frame 112 by a wire 272 connected to the first electrode 260.

Next, the light source 200C having the flip chip bonding structure shown in FIG. 11C may include a substrate 210B, a light emitting structure 220B, a first electrode 232B, and a second electrode 234B.

The light emitting structure 220B may be disposed under the substrate 210B. The first conductive type semiconductor layer 222B is disposed below the substrate 210B. The active layer 224B is disposed under the first conductive type semiconductor layer 222B. And the second conductivity type semiconductor layer 226B is disposed under the active layer 224B. The first electrode 232B is disposed under the first conductive type semiconductor layer 222B. And the second electrode 234B is disposed under the second conductive type semiconductor layer 226B.

The substrate 210B, the first conductivity type semiconductor layer 222B, the active layer 224B, the second conductivity type semiconductor layer 226B, the first electrode 232B and the second electrode 234B shown in Fig. The first conductivity type semiconductor layer 222A, the active layer 224A, the second conductivity type semiconductor layer 226A, the first electrode 232A, and the second electrode 234B shown in FIG. 11A are the same as the substrate 210A, the first conductivity type semiconductor layer 222A, And can be implemented with the same material. In the case of the light source 200A shown in FIG. 11A, since the light is emitted in the top and side directions, each of the second conductivity type semiconductor layer 226A and the second electrode 234A may be formed of a light transmitting material. In the light source 200C shown in FIG. 11C, since the light is emitted in the top and side directions, the first conductive semiconductor layer 222B, the substrate 210B, and the first electrode 232B are formed of a light- Can be implemented.

11C, the light emitting device package 100A may further include first and second solder portions 282 and 284 when the light source 200C has a flip chip bonding structure.

The first solder portion 282 is disposed between the first electrode 232B and the first lead frame 112 (or the second lead frame 114). The first conductive semiconductor layer 222B is electrically connected to the first lead frame 112 (or the second lead frame 114) through the first electrode 232B and the first solder portion 282 . The second solder portion 284 is disposed between the second electrode 234B and the second lead frame 114 (or the first lead frame 112). The second conductive semiconductor layer 226B is electrically connected to the second lead frame 114 (or the first lead frame 112) through the second electrode 234B and the second solder portion 284 .

The first conductivity type semiconductor layers 222A, 252 and 222B in the light emitting structures 220A, 250 and 220B shown in FIGS. 11A to 11C are n-type semiconductor layers, and the second conductivity type semiconductor layers 226A, 226B may be implemented as a p-type semiconductor layer. Alternatively, the first conductivity type semiconductor layers 222A, 252, and 222B may be a p-type semiconductor layer, and the second conductivity type semiconductor layers 226A, 256, and 226B may be an n-type semiconductor layer.

The light emitting structures 220A, 250 and 220B may have any one of an n-p junction structure, a p-n junction structure, an n-p-n junction structure, and a p-n-p junction structure.

Referring again to FIGS. 1 to 10, the outer bodies 150A and 150B may be disposed to surround the outer sides of the inner bodies 140A and 140B.

The inner bodies 140A and 140B and the outer bodies 150A and 150B may have a symmetrical planar shape. For example, referring to FIG. 4, the lateral length L1 and the longitudinal length L2 of the light emitting device package 100A may be the same. As described above, when the lateral length L1 and the longitudinal length L2 have the same forward planar shape as that of the rectangular lateral plan shape in which the lateral length L1 and the vertical length L2 are different from each other, The possibility of cracks occurring in the outer peripheries P of the semiconductor chips 100A and 100A may be lowered.

In addition, the side portion 140AS of the inner body 140A may include at least one inner fastening hole IH1, IH2, and the outer body 150A may include at least one of the inner fastening holes IH1, IH2 communicating with the inner fastening holes IH1, And may include outer fastening holes (OH1, OH2, OH3, OH4).

The inner fastening holes IH1 and IH2 may be spaced apart from each other by a predetermined distance and the outer fastening holes OH1, OH2, OH3 and OH4 may be spaced apart from each other by a predetermined distance.

The first lead frame 112 may include a first fastening protrusion 112P and the second lead frame 114 may include a second fastening protrusion 114P. The first and second fastening protrusions 112P and 114P may have a shape protruding in the third outward direction (e.g., the y-axis direction) toward the inner body 140A and the outer body 150A.

The first fastening protrusion 112P of the first lead frame 112 is embedded in the inside fastening hole IH1 and the outside fastening hole OH1 and the second fastening protrusion 114P of the second lead frame 114 is fastened to the inside The inner body 140A and the outer body 150A can be fastened by being embedded in the fastening hole IH2 and the outer fastening holes OH2, OH3 and OH4.

The number of the first fastening protrusions 112P is two and the number of the second fastening protrusions 114P is four and the number of the inner fastening holes IH1 and IH2 corresponding to the number of the first fastening protrusions 114P is four, And outer fastening holes OH1, OH2, OH3 and OH4. However, the embodiment is not limited to the number of these (112P, 114P, IH1, IH2, OH1, OH2, OH3, OH4).

7 and 8, the molding member 160 may be embedded in the cavity C so as to surround the light sources 122 and 124 and the zener diodes 126. The molding member 160 improves the luminous flux of the light emitted from the light sources 122 and 124 and prevents the light sources 122 and 124 and the zener diode 126 from being damaged from the external environment. Also, the molding member 160 may serve to protect the first to fourth wires 132 to 138. The molding member 160 may be embodied as silicon. For example, the molding member 160 may have a structure in which a white silicone and a clear silicone are laminated, but the embodiment is not limited to the specific structure or material of the molding member 160. The molding member 160 may include a wavelength conversion material (for example, a phosphor or a phosphor) for converting the wavelength of light emitted from the light sources 122 and 124.

In addition, the Zener diode 126 may be disposed on any one of the first and second lead frames 112 and 114. For example, in the case of FIGS. 1 to 10, the zener diode 126 is illustrated as being disposed on the first lead frame 112, but the embodiment is not limited thereto. That is, according to another embodiment, the Zener diode 126 may be disposed on the second lead frame 114. At this time, the Zener diode 126 and the second lead frame 114 may be electrically connected to each other by the fourth wire 138. Each of the first to fourth wires 132 to 138 may be formed of gold (Au).

The Zener diode 126 serves to prevent an overcurrent flowing through the light emitting device packages 100A and 100B and a voltage ESD (ElectroStatic Discharge).

In addition, an adhesive layer (not shown) may be disposed between the Zener diode 126 and the first lead frame 112. The adhesive layer serves to bond the zener diodes 160 to the first lead frame 112 and may have a paste form and may include silver (Ag) and epoxy.

In some cases, the light emitting device package 100A may not include the zener diode 160 and the adhesive layer, and the embodiment is not limited to the form or existence of the zener diode 160 and the adhesive layer.

7 and 8, the superstructure 170 may be disposed so as to cover the cavity C. As shown in Fig. Here, the superstructure 170) may correspond to a diffusion plate or a lens. Optionally, the superstructure 170 may be omitted.

When the upper structure 170 is disposed as shown in FIGS. 7 and 8, light emitted from the light sources 122 and 124 is reflected by the upper structure 170 toward the inner body 140A and 140B, To the body 150A, 150B. In this case, if the inner bodies 140A and 140B are implemented with a white EMC, as shown in FIGS. 9 and 10, When the number of the reflective protrusions 140BP is arranged, more light can be reflected and the light extraction efficiency can be improved. This is because the number of the reflective protrusions implemented in the white EMC is more than that of the light emitting device package 100A shown in Figs. 1 to 6 in Figs. 9 and 10.

Also, the outer bodies 150A and 150B may have different materials from the inner bodies 140A and 140B. For example, since the inner bodies 140A and 140B are disposed adjacent to the light sources 122 and 124 and define the cavity C, the inner bodies 140A and 140B can be realized by using a material having superior reflection characteristics rather than rigidity. On the other hand, since the outer bodies 150A and 150B are disposed outside the light emitting device packages 100A and 100B, the outer bodies 150A and 150B can be realized using a material having a stiffness rather than a reflection characteristic.

For example, each of the inner bodies 140A and 140B and the outer bodies 150A and 150B may include an epoxy molding compound (EMC). For example, the inner body 140A, 140B may include a white EMC, and the outer bodies 150A, 150B may include a black EMC. Also, the inner bodies 140A and 140B and the outer bodies 150A and 150B may be coupled by an injection molding method.

Hereinafter, a manufacturing process of the light emitting device package 100A or 100B according to the embodiment will be briefly described.

First, an etching process for etching copper and the like and a stamping process for patterning the bases of the first and second lead frames 112 and 114 by punching are performed.

Thereafter, a plating process for plating the patterned bases of the first and second lead frames 112 and 114 is performed. In the plating process, the base plating and the main plating described above can be performed.

Thereafter, the inner body 140A, 140B is formed by injecting the white EMC by the primary metal mold, and the outer body 150A, 150B is formed by injecting the black EMC by the secondary metal mold to form the inner bodies 140A, 140B And the outer bodies 150A and 150B.

Then, the light sources 122 and 124 and the first to third wires 132 to 136 are formed on the second lead frame 114. The Zener diode 126 is formed on the first lead frame 112 and the fourth wire 138 is formed on the Zener diodes 126 And the second lead frame 114 by a wire bonding process.

Thereafter, a dispensing process for filling the cavity C with the molding member 160 may be performed.

When a plurality of light emitting device packages are simultaneously formed through the above-described processes, individual light emitting device packages 100A and 100B can be formed by performing a dicing process.

In addition, each of the white EMC and the black EMC may include an epoxy resin, a hardener, and a filler. For example, the volume (vol) of the filler contained in the white EMC is 76/83 (vol / wt%) and the volume (vol) of the filler contained in the black EMC is 84/74 (vol / wt%).

In addition, white EMC has better reflectivity than black EMC, and black EMC has higher rigidity than white EMC. For example, the breaking strength of white EMC and black EMC can be as shown in Table 1 below.

division Black EMC White EMC Fracture strength (kg / f) Minimum value (MIN) 2.66 Minimum value (MIN) 1.31 Max (MAX) 4.57 Max (MAX) 1.77 Avg (Avg) 3.24 Avg (Avg) 1.56

Referring to Table 1, it can be seen that the breaking strength of black EMC is about twice that of white EMC.

Therefore, when the inner bodies 140A and 140B forming the cavity C in which the light sources 122 and 124 are disposed are implemented by the white EMC, Can be improved.

Also, referring to FIG. 4, cracks tend to occur on the outside (P) of the light emitting device packages 100A and 100B.

Therefore, when the outer side P of the light emitting device packages 100A and 100B is implemented by a black EMC having a stiffness stronger than that of the white EMC, the light emitting device package 100A And 100B are improved, and cracks can be prevented from occurring at the crack generation point P.

The light emitting device packages 100A and 100B described above are made by dividing the body into the inner bodies 140A and 140B and the outer bodies 150A and 150B and the inner bodies 140A and 140B with the white EMC And the outer bodies 150A and 150B are realized as a black EMC having a stiffness superior to that of a white EMC, and can have strong rigidity while having excellent light extraction efficiency.

A plurality of light emitting device packages according to the embodiments may be arrayed on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, and the like may be disposed on the light path of the light emitting device package. The light emitting device package, the substrate, and the optical member may function as a backlight unit.

Further, the light emitting device package according to the embodiment can be applied to a display device, a pointing device, and a lighting device.

Here, the display device includes a bottom cover, a reflector disposed on the bottom cover, a light emitting module for emitting light, a light guide plate disposed in front of the reflector for guiding light emitted from the light emitting module forward, An image signal output circuit connected to the display panel and supplying an image signal to the display panel; and a color filter disposed in front of the display panel, . Here, the bottom cover, the reflection plate, the light emitting module, the light guide plate, and the optical sheet may form a backlight unit.

In addition, the illumination device may include a light source module including a substrate and a light emitting device package according to an embodiment, a heat sink for dissipating heat of the light source module, and a power supply unit for processing or converting an electric signal provided from the outside, . For example, the lighting device may include a lamp, a headlamp, or a streetlight.

A head lamp includes a light emitting module including light emitting device packages disposed on a substrate, a reflector for reflecting light emitted from the light emitting module in a predetermined direction, for example, forward, a lens for refracting light reflected by the reflector forward And a shade that reflects off or reflects a portion of the light reflected by the reflector and directed to the lens to provide the designer with a desired light distribution pattern.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be understood that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

100A, 100B: light emitting device package 112, 114: lead frame
122, 124, 200A, 200B, 200C: Light source 126: Zener diode
132, 134, 136, 138, 242, 244, 272: wires 140A, 140B: inner body
150A, 150B: outer body 160: molding member
170: superstructure

Claims (17)

First and second lead frames;
An inner body electrically isolating the first and second lead frames from each other and defining a cavity with the first and second lead frames;
A light source disposed in at least one of the first and second lead frames in the cavity; And
And an outer body surrounding the outer side of the inner body and having a material different from that of the inner body. The light emitting device package according to claim 1, wherein each of the inner body and the outer body includes EMC. The light emitting device package according to claim 2, wherein the inner body includes a white EMC, and the outer body comprises a black EMC. 2. The device of claim 1, wherein the inner body
A lower portion electrically separating the first and second lead frames from each other; And
And a side portion extending from the lower portion to form a side surface of the cavity. 5. The light emitting device package according to claim 4, wherein the inner body further comprises a reflective protrusion penetrating the upper surface of the outer body. The light emitting device package according to claim 5, wherein the reflective protrusion divides the upper surface of the outer body into two halves. The light emitting device package according to claim 5, wherein the reflective protrusion divides the upper surface of the outer body into four equal parts. The light emitting device package according to claim 6 or 7, wherein the reflective protrusion has a symmetrical planar shape. 5. The apparatus of claim 4, wherein the lower portion of the inner body includes a plurality of through holes,
The first lead frame
A first lower lead frame inserted in a part of the plurality of through holes; And
And a first upper lead frame disposed on the first lower lead frame and forming a part of a bottom surface of the cavity,
The second lead frame
A second lower lead frame inserted into the other of the plurality of through holes; And
And a second upper lead frame disposed on the second lower lead frame, the second upper lead frame forming a bottom portion of the bottom surface of the cavity. The light emitting device package according to claim 6, wherein the first lower lead frame and the first upper lead frame are integral, and the second lower lead frame and the second upper lead frame are integral. The light emitting device package according to claim 6, wherein the first upper lead frame, the second upper lead frame, and the lower portion of the inner body form the same horizontal surface corresponding to the bottom surface of the cavity. 5. The connector according to claim 4, wherein the side portion of the inner body includes at least one inner fastening hole, and the outer body includes at least one outer fastening hole communicating with the inner fastening hole,
Wherein each of the first and second lead frames includes a fastening protrusion that is embedded in the inner fastening hole and the outer fastening hole to fasten the inner body and the outer body. [14] The apparatus of claim 12, wherein the at least one inner fastening hole includes a plurality of inner fastening holes spaced apart from each other by a predetermined distance, and the at least one outer fastening hole includes a plurality of outer fastening holes spaced apart from each other by a predetermined distance Emitting device package. The light emitting device package according to claim 1, further comprising a molding member embedded in the cavity to surround the light source. The light emitting device package according to claim 1, further comprising an upper structure disposed to cover the cavity. The light emitting device package according to claim 1, wherein the inner body and the outer body have a plane shape that is symmetrical. The lighting device according to any one of claims 1 to 7 and 9 to 16, comprising the light emitting device package.

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