KR20130016945A - Light emitting device and method for fabricating the same - Google Patents

Light emitting device and method for fabricating the same Download PDF

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Publication number
KR20130016945A
KR20130016945A KR1020110079156A KR20110079156A KR20130016945A KR 20130016945 A KR20130016945 A KR 20130016945A KR 1020110079156 A KR1020110079156 A KR 1020110079156A KR 20110079156 A KR20110079156 A KR 20110079156A KR 20130016945 A KR20130016945 A KR 20130016945A
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South Korea
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layer
light emitting
ohmic
emitting device
current blocking
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KR1020110079156A
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Korean (ko)
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김현주
정환희
김소정
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엘지이노텍 주식회사
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Priority to KR1020110079156A priority Critical patent/KR20130016945A/en
Publication of KR20130016945A publication Critical patent/KR20130016945A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

PURPOSE: A light emitting device and a manufacturing method thereof are provided to improve reliability by increasing the adhesion between a reflection layer and an ohmic layer. CONSTITUTION: A reflection layer(160) is formed on a supporting substrate. An ohmic layer(150) is formed on the reflection layer and includes a transparent electrode layer. A light emitting structure(135) is formed on the ohmic layer. A recessed part is formed in a part of the interface between the ohmic layer and the reflection layer. A current blocking layer(145) is formed in a region between the light emitting structure and the transparent electrode layer.

Description

LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME}

Embodiments relate to a light emitting device, a method of manufacturing the light emitting device, a light emitting device package and an illumination system.

Light Emitting Device (LED) is a device that converts electrical energy into light energy and can realize various colors by adjusting the composition ratio of compound semiconductors.

The light emitting device has advantages of low power consumption, semi-permanent life, fast response speed, safety, and environmental friendliness compared to conventional light sources such as fluorescent lamps and incandescent lamps.

Therefore, many researches are being made to replace the existing light sources with light emitting devices, and the use of light emitting devices as light sources for lighting devices such as lamps, liquid crystal displays, electronic signs, and street lamps, which are used indoors and outdoors, is increasing. to be.

For example, nitride semiconductors have received great interest in the development of optical devices and high power electronic devices due to their high thermal stability and wide bandgap energy. In particular, blue light emitting devices, green light emitting devices, and ultraviolet light emitting devices using nitride semiconductors are commercially used and widely used.

The expansion of the application range of the light emitting device basically requires the development of high output and high efficiency technology of the light emitting device.

Embodiments provide a high output, high efficiency light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system.

In addition, the embodiment is to provide a light emitting device, a method of manufacturing a light emitting device, a light emitting device package and an illumination system with improved reliability.

The light emitting device according to the embodiment includes a support substrate; A reflective layer on the support substrate; An ohmic layer on the reflective layer; And a light emitting structure formed on the ohmic layer, and includes roughness at a portion of an interface between the reflective layer and the ohmic layer.

In addition, the method of manufacturing a light emitting device according to the embodiment comprises the steps of forming a light emitting structure on the growth substrate; Forming a protective layer and a current blocking layer on the light emitting structure corresponding to the unit chip region; Forming an ohmic layer on the light emitting structure, the current blocking layer, and the protective layer; Forming roughness on the ohmic layer; And forming a reflective layer on the ohmic layer.

The embodiment can provide a high power, high efficiency light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system.

In addition, the embodiment can provide a light emitting device, a method of manufacturing a light emitting device, a light emitting device package and an illumination system with improved reliability.

1 is a sectional view of a light emitting device according to a first embodiment;
2 is a cross-sectional view of a light emitting device according to a second embodiment;
3 to 10 are cross-sectional views of a light emitting device according to the embodiment;
11 is a cross-sectional view of a light emitting device package according to an embodiment.
12 is a perspective view of a lighting unit according to an embodiment.
13 is a perspective view of a backlight unit according to an embodiment.

In the description of the embodiments, it is to be understood that each layer (film), area, pattern or structure may be referred to as being "on" or "under" the substrate, each layer Quot; on "and" under "are intended to include both" directly "or" indirectly " do. Also, the criteria for top, bottom, or bottom of each layer will be described with reference to the drawings.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. In addition, the size of each component does not necessarily reflect the actual size.

(Example)

1 is a cross-sectional view of a light emitting device 100 according to a first embodiment.

The light emitting device 100 according to the first embodiment includes a support substrate 190, a reflective layer 160 formed on the support substrate 190, an ohmic layer 150 formed on the reflective layer 160, and the ohmic. It includes a light emitting structure 135 formed on the mix layer 150. The ohmic layer 150 may include a transparent electrode layer.

The light emitting structure 135 may include a first conductive semiconductor layer 110, an active layer 120, and a second conductive semiconductor layer 130.

In an embodiment, roughness may be included at an interface between the reflective layer 160 and the ohmic layer 150.

For example, the embodiment further includes a current blocking layer 145 formed in a portion of the ohmic layer 150, and the ohmic layer 150 in a region vertically overlapping with the current blocking layer 145. First unevenness R1 may be provided.

The transparent electrode layer 150 may be formed along an interface step of the current blocking layer 145.

According to the embodiment, the concave-convex pattern is formed between the ohmic layer 150 and the reflective layer 160 to increase the contact area of each other, thereby improving the reliability by increasing the adhesion between the ohmic layer and the reflective layer.

In an embodiment, an upper surface of the current blocking layer 145 may contact the second conductive semiconductor layer 130, and a lower surface and a side surface of the current blocking layer 145 may contact the ohmic layer 150, but is not limited thereto. It is not.

The current blocking layer 145 may be formed such that at least a portion of the current blocking layer 145 overlaps with the electrode 115 in a vertical direction, thereby alleviating a phenomenon in which current is concentrated at the shortest distance between the electrode 115 and the supporting substrate 190. The luminous efficiency of the light emitting device 100 can be improved.

In addition, the embodiment further includes a protective layer 140 on the outside between the ohmic layer 150 and the light emitting structure 135, the ohmic layer 150 in the region vertically overlapping with the protective layer 140. ) May be provided with the second unevenness (R2). The protective layer 140 may be a channel layer, but is not limited thereto.

According to the embodiment, the concave-convex pattern is formed between the ohmic layer 150 and the reflective layer 160 to increase the contact area of each other, thereby improving the reliability by increasing the adhesion between the ohmic layer and the reflective layer.

The upper surface of the protective layer 140 may contact the second conductive semiconductor layer 130 and the passivation layer 195, and the lower surface and the side surface of the protective layer 140 may be surrounded by the ohmic layer 150. . For example, the ohmic layer 150 may form a structure surrounding the protective layer 140.

Therefore, when the isolation etching is performed to separate the light emitting structure 135 into the unit chip region, since the protective layer 140 is not etched, the cracking phenomenon occurring at the side of the protective layer 140 is eliminated. Can be effectively prevented.

According to the embodiment, the concave-convex pattern is formed between the ohmic layer 150 and the reflective layer 160 to increase the contact area of each other, thereby improving the reliability by increasing the adhesion between the ohmic layer and the reflective layer.

Accordingly, the embodiment can provide a light emitting device and a method of manufacturing the light emitting device having improved reliability.

2 is a sectional view of the light emitting device 102 according to the second embodiment.

The second embodiment may employ the technical features of the first embodiment, and will be described below with reference to the features of the second embodiment.

The second embodiment may include irregularities in the entire interface between the ohmic layer 150 and the reflective layer 160.

For example, in the second embodiment, the interface between the ohmic layer 150 and the reflective layer 160 may include third unevenness R3, and the first unevenness R1 and the second unevenness R2 may be formed. It may be formed at an interface between the ohmic layer 150 and the reflective layer 160 other than the formed region.

According to the embodiment, the concave-convex pattern is formed between the ohmic layer 150 and the reflective layer 160 to increase the contact area of each other, thereby improving the reliability by increasing the adhesion between the ohmic layer and the reflective layer.

The embodiment may further include a bonding layer 180 and a barrier layer 170 between the support substrate 190 and the light emitting structure 135.

A passivation layer 195 may be formed on a side surface of the light emitting structure 135, and an electrode 115 is formed on a portion of an upper surface of the first conductivity type semiconductor layer 110, and the first conductivity type semiconductor. Roughness patterns 112 may be formed in other regions of the top surface of layer 110 to increase light extraction efficiency.

According to the embodiment, the concave-convex pattern is formed between the ohmic layer 150 and the reflective layer 160 to increase the contact area of each other, thereby improving the reliability by increasing the adhesion between the ohmic layer and the reflective layer.

The embodiment can provide a high power, high efficiency light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system.

In addition, the embodiment can provide a light emitting device, a method of manufacturing a light emitting device, a light emitting device package and an illumination system with improved reliability.

Hereinafter, the features of the embodiment will be described in more detail with reference to FIGS. 3 to 10 while describing a method of manufacturing the light emitting device according to the embodiment.

First, the light emitting structure 135 is formed on the growth substrate 101 as shown in FIG. 3.

The growth substrate 101 may be formed of, for example, at least one of sapphire (Al 2 O 3 ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, Ge, but is not limited thereto. For example, the light emitting structure may be grown on the growth substrate 101, and the sapphire substrate may be used.

The light emitting structure 135 may be formed by sequentially growing the first conductive semiconductor layer 110, the active layer 120, and the second conductive semiconductor layer 130 on the growth substrate 101.

The light emitting structure 135 may include, for example, a metal organic chemical vapor deposition (MOCVD), a chemical vapor deposition (CVD), a plasma chemical vapor deposition (PECVD), a molecular beam. Molecular Beam Epitaxy (MBE), Hydride Vapor Phase Epitaxy (HVPE), etc. may be formed using, but is not limited thereto.

Meanwhile, a buffer layer (not shown) and / or an undoped semiconductor layer (not shown) may be formed between the light emitting structure 135 and the growth substrate 101 to alleviate the lattice constant difference.

The first conductivity type semiconductor layer 110 may be implemented as a group III-V compound semiconductor doped with a first conductivity type dopant, and when the first conductivity type semiconductor layer 110 is an N-type semiconductor layer, The first conductive dopant may be an N-type dopant and may include Si, Ge, Sn, Se, or Te, but is not limited thereto.

The first conductive semiconductor layer 110 may be formed of a semiconductor material having a composition formula of In x Al y Ga 1 -x- y N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). It may include. For example, the first conductivity type semiconductor layer 110 is formed of any one or more of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP, InP. Can be.

The first conductivity type semiconductor layer 110 may form an N-type GaN layer using a chemical vapor deposition method (CVD), molecular beam epitaxy (MBE), sputtering, or hydroxide vapor phase epitaxy (HVPE). . In addition, the first conductive semiconductor layer 110 may include a silane including n-type impurities such as trimethyl gallium gas (TMGa), ammonia gas (NH 3 ), nitrogen gas (N 2 ), and silicon (Si) in the chamber. The gas SiH 4 may be injected and formed.

Thereafter, a current spreading layer (not shown), an electron injection layer (not shown), or a strain control layer (not shown) may be formed on the first conductive semiconductor layer 110.

The current diffusion layer may be an undoped GaN layer, but is not limited thereto.

The electron injection layer (not shown) may be a first conductivity type gallium nitride layer. For example, the electron injection layer may be the electron injection efficiently by being doped at a concentration of the n-type doping element 6.0x10 18 atoms / cm 3 ~ 8.0x10 18 atoms / cm 3.

In addition, the embodiment may form a strain control layer (not shown) formed of In y Al x Ga (1-xy) N (0≤x≤1, 0≤y≤1) / GaN, etc. on the electron injection layer. have. The strain control layer may effectively mitigate stress that is odd due to lattice mismatch between the first conductivity-type semiconductor layer 110 and the active layer 120.

In addition, as the strain control layer is repeatedly stacked in at least six cycles having the composition of the first InGaN and the second InGaN, more electrons are collected at the low energy level of the active layer 120, and as a result, the probability of recombination of electrons and holes This can be increased to improve the luminous efficiency.

Thereafter, the active layer 120 is formed on the strain control layer.

The active layer 120 has an energy band inherent to the active layer (light emitting layer) material because electrons injected through the first conductive semiconductor layer 110 and holes injected through the second conductive semiconductor layer 130 formed thereafter meet each other. It is a layer that emits light with energy determined by.

The active layer 120 may be formed of at least one of a single quantum well structure, a multi quantum well structure (MQW), a quantum line structure, or a quantum dot structure. For example, the active layer 120 may be injected with trimethyl gallium gas (TMGa), ammonia gas (NH 3 ), nitrogen gas (N 2 ), and trimethyl indium gas (TMIn) to form a multi-quantum well structure. It is not limited to this.

The well layer / barrier layer of the active layer 120 is formed of one or more pair structures of InGaN / GaN, InGaN / InGaN, GaN / AlGaN, InAlGaN / GaN, GaAs (InGaAs) / AlGaAs, GaP (InGaP) / AlGaP. But it is not limited thereto. The well layer may be formed of a material having a lower band gap than the band gap of the barrier layer.

Next, in the embodiment, the electron blocking layer (not shown) is formed on the active layer 120 to improve the luminous efficiency by acting as electron blocking and the cladding of the active layer (MQW cladding). For example, the electron blocking layer may be formed of Al x In y Ga (1-xy) N (0 ≦ x ≦ 1,0 ≦ y ≦ 1) based semiconductor, and an energy band gap of the active layer 120 Rather, it may have a high energy band gap and may be formed to a thickness of about 100 kPa to about 600 kPa, but is not limited thereto.

The electron blocking layer may be formed of a superlattice of Al z Ga (1-z) N / GaN (0? Z ? 1), but is not limited thereto.

The electron blocking layer can efficiently block the electrons that are ion-implanted into the p-type and overflow, and increase the hole injection efficiency. For example, the electron blocking layer can effectively prevent electrons that are overflowed by ion implantation of Mg in a concentration range of about 10 18 to 10 20 / cm 3 , and increase the hole injection efficiency.

Thereafter, a second conductivity type semiconductor layer 130 is formed on the electron blocking layer.

The second conductive type semiconductor layer 130 is a second conductive type dopant is doped -5-group three-V compound semiconductor, for example, In x Al y Ga 1 -x- y N (0≤x≤1, 0≤y And a semiconductor material having a composition formula of ≦ 1, 0 ≦ x + y ≦ 1). When the second conductive semiconductor layer 130 is a P-type semiconductor layer, the second conductive dopant may be a P-type dopant and may include Mg, Zn, Ca, Sr, and Ba.

The second conductivity type semiconductor layer 130 is a bicetyl cyclone containing p-type impurities such as trimethyl gallium gas (TMGa), ammonia gas (NH 3 ), nitrogen gas (N 2 ), and magnesium (Mg). Pentadienyl magnesium (EtCp 2 Mg) {Mg (C 2 H 5 C 5 H 4 ) 2 } may be injected to form a p-type GaN layer, but is not limited thereto.

In an exemplary embodiment, the first conductivity type semiconductor layer 110 may be an N type semiconductor layer, and the second conductivity type semiconductor layer 130 may be a P type semiconductor layer, but is not limited thereto. In addition, a semiconductor, for example, an N-type semiconductor layer (not shown) having a polarity opposite to that of the second conductive type may be formed on the second conductive type semiconductor layer 130. Accordingly, the light emitting structure 135 may be implemented as any one of an N-P junction structure, a P-N junction structure, an N-P-N junction structure, and a P-N-P junction structure.

Next, as shown in FIG. 4, the passivation layer 140 and the current blocking layer 145 are formed on the light emitting structure 135 corresponding to the unit chip region.

The protective layer 140 and the current blocking layer 145 may be formed on the second conductive semiconductor layer 130 using a mask pattern. The protective layer 140 and the current blocking layer 145 may be formed using various deposition methods.

For example, the current blocking layer 145 may include at least one of ZnO, SiO 2 , SiON, Si 3 N 4 , Al 2 O 3 , TiO 2 , Ti, Al, Cr, but is not limited thereto. .

The current blocking layer 145 may be formed such that at least a portion of the current blocking layer 145 overlaps with the electrode 115 to be formed in the vertical direction. The light emission efficiency of the light emitting device 100 may be improved by alleviating the phenomenon.

The protective layer 140 may be formed of an electrically insulating material, a material having a lower electrical conductivity than the reflective layer 160 or the bonding layer 180, or a material forming a Schottky contact with the second conductive semiconductor layer 130. Can be formed. For example, the protective layer 140 may include ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, ZnO, SiO 2 , SiO x , SiO x N y , Si 3 N 4 , Al 2 O 3 , It may include at least one of TiO x , TiO 2 , Ti, Al or Cr.

In addition, the protective layer 140 may be overlapped in a vertical direction with a light emitting structure 135, a portion of which is formed later. The protective layer 140 may increase the distance between the ohmic layer 150 and the active layer 120 to reduce the possibility of an electrical short circuit between the ohmic layer 150 and the active layer 120. In addition, the protective layer 140 may prevent penetration of moisture and the like into a gap between the light emitting structure 135 and the support substrate 190.

In addition, the protective layer 140 may prevent the electrical short circuit occurs in the chip separation process. More specifically, in the case of isolation etching to separate the light emitting structure 135 into the unit chip region, the fragments generated in the ohmic layer 150 are formed of the second conductive semiconductor layer 130 and the active layer. An electrical short may occur between the layers 120 or between the active layer 120 and the first conductive semiconductor layer 110, and the protective layer 140 may prevent the electrical short.

Next, as shown in FIGS. 5 and 6, the ohmic layer 150 is formed on the second conductive semiconductor layer 130 and the protective layer 140, and the reflective layer 160 is formed on the ohmic layer 150. ) Can be formed. Here, the ohmic layer 150 is formed in a structure surrounding the protective layer 140.

The ohmic layer 150 and the reflective layer 160 may be formed by, for example, any one of an electron beam (E-beam) deposition, sputtering, and plasma enhanced chemical vapor deposition (PECVD).

The area in which the ohmic layer 150 and the reflective layer 160 are formed may be variously selected, and various kinds of light emitting devices may be manufactured according to the area in which the ohmic layer 150 and / or the reflective layer 160 are formed. Can be.

The ohmic layer 150 may include a transparent electrode layer. For example, the ohmic layer 150 may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), or IAZO. indium aluminum zinc oxide (IGZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IZON (IZO Nitride), AGZO (Al-Ga ZnO), IGZO (In-Ga ZnO), ZnO, IrOx, RuOx, NiO, RuOx / ITO, Ni / IrOx / Au, and Ni / IrOx / Au / ITO, Ag, Ni, Cr, Ti, At least one of Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, and Hf may be formed, but is not limited thereto.

The reflective layer 160 may be generated by the light emitting structure 135 to reflect the light directed toward the reflective layer 160 to improve the luminous efficiency of the light emitting devices 100 and 102.

Meanwhile, the reflective layer 160 may include at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, or an alloy thereof. In addition, the reflective layer 160 may include the above-described metal or alloy, indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IZO), and indium gallium tin (IGTO). oxide), IGZO (indium gallium zinc oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide) can be formed in a multi-layer using a transmissive conductive material. For example, the reflective layer 160 may include a stacked structure of IZO / Ni, AZO / Ag, IZO / Ag / Ni, AZO / Ag / Ni, Ag / Cu, Ag / Pd / Cu, etc. It doesn't happen.

The ohmic layer 150 may be formed to a thickness of about 20 nm to 50 nm, and the reflective layer 160 may be formed to a thickness of about 180 nm to 220 nm, but is not limited thereto.

Since the ohmic layer 150 and the reflective layer 160 have the thickness range, an uneven pattern is optimally formed between the ohmic layer 150 and the reflective layer 160 to increase the contact area with each other. Reliability may be improved by increasing the adhesion between the reflective layers.

In an embodiment, roughness may be included at an interface between the reflective layer 160 and the ohmic layer 150. The unevenness may be formed by patterning the ohmic layer 150. For example, irregularities may be formed by wet etching or dry etching of a portion of the upper surface of the ohmic layer 150.

For example, the first embodiment further includes a current blocking layer 145 formed in a portion of the ohmic layer 150, and the ohmic layer 150 in a region vertically overlapping the current blocking layer 145. ) May be provided with the first unevenness (R1).

In addition, the first embodiment further includes a protective layer 140 on the outer side between the ohmic layer 150 and the light emitting structure 135, and the ohmic layer in a region vertically overlapping the protective layer 140. On the 150, the second unevenness R2 may be provided.

According to the embodiment, the concave-convex pattern is formed between the ohmic layer 150 and the reflective layer 160 to increase the contact area of each other, thereby improving the reliability by increasing the adhesion between the ohmic layer and the reflective layer.

In addition, the second embodiment may include irregularities in the entire interface between the ohmic layer 150 and the reflective layer 160. For example, in the second embodiment, the interface between the ohmic layer 150 and the reflective layer 160 may include third unevenness R3, and the first unevenness R1 and the second unevenness R2 may be formed. It may be formed at an interface between the ohmic layer 150 and the reflective layer 160 other than the formed region.

Next, as shown in FIG. 7, the barrier layer 170 is formed on the reflective layer 160, and the bonding layer 180 is formed on the barrier layer 170. Thereafter, the support substrate 190 is formed on the bonding layer 180.

Although the embodiment illustrates that the support substrate 190 is bonded by the bonding layer 180, the support substrate 190 may be formed by a plating method or a deposition method.

The barrier layer 170 may be formed on the reflective layer 160 as a diffusion barrier layer. The barrier layer 170 may be in contact between the reflective layer 160 and the bonding layer 180 to prevent diffusion between the reflective layer 160 and the bonding layer 180.

The barrier layer 170 may include at least one of Ni, Pt, Ti, W, V, Fe, Mo, and alloys thereof. In addition, the barrier layer 170 may be formed in a multi-layer as well as a single layer.

The unevenness between the reflective layer 160 and the ohmic layer 150 may be transferred to an interface between the reflective layer 160 and the barrier layer 170, but is not limited thereto.

The bonding layer 180 may be formed on the barrier layer 170 as a bonding layer or a seed layer. The bonding layer 180 may be in contact between the barrier layer 170 and the support substrate 190 to enhance the adhesive force between the barrier layer 170 and the support substrate 190.

The bonding layer 180 is Cu, Ni, Ag, Mo, Al, Au, Nb, W, Ti, Cr, Ta, Al, Pd, Pt, Si, Al-Si, Ag-Cd, Au-Sb, Al -Zn, Al-Mg, Al-Ge, Pd-Pb, Ag-Sb, Au-In, Al-Cu- Si, Ag-Cd-Cu, Cu-Sb, Cd-Cu, Al-Si-Cu, Ag -Cu, Ag-Zn, Ag-Cu-Zn, Ag-Cd-Cu-Zn, Au-Si, Au-Ge, Au-Ni, Au-Cu, Au-Ag-Cu, Cu-Cu 2 O, Cu -Zn, Cu-P, Ni-P, Ni-Mn-Pd, Ni-P, Pd-Ni may be formed of a layer including any one or two or more, but is not limited thereto.

The support substrate 190 may support the light emitting structure 135 and provide power to the light emitting structure 135 together with the electrode 115. In addition, the support substrate 190 may be a conductive support substrate including at least one of Cu, Au, Ni, Mo, Cu-W, Si, Ge, GaAs, ZnO, or SiC. However, the embodiment is not limited thereto, and an insulating substrate may be used instead of the conductive support substrate, and a separate electrode may be formed.

The support substrate 190 may have a thickness of 30 μm to 500 μm. However, the embodiment is not limited thereto.

Next, as shown in FIG. 8, the growth substrate 101 is removed from the light emitting structure 135. In FIG. 8, the light emitting device illustrated in FIG. 7 is shown upside down. In this case, the growth substrate 101 may be removed by a laser lift off method or a chemical lift off method.

Next, as shown in FIG. 9, an isolation etching is performed on the light emitting structure 135 according to the unit chip region, and the light emitting structure 135 is separated into a plurality of light emitting structures 135.

For example, the isolation etching may be performed by a dry etching method such as inductively coupled plasma (ICP), but is not limited thereto.

Next, as shown in FIG. 10, a passivation layer 195 is formed on the passivation layer 140 and the light emitting structure 135, and the passivation layer is formed so that the top surface of the first conductive semiconductor layer 110 is exposed. Selectively remove 195).

A roughness pattern 112 is formed on the top surface of the first conductive semiconductor layer 110 to improve light extraction efficiency, and an electrode 115 is formed on the roughness pattern 112. The roughness pattern 112 may be formed by a wet etching process or a dry etching process. The electrode 115 may be formed by a method such as sputtering or electron beam deposition.

Thereafter, when the structure is separated into a unit chip region through a chip separation process, a plurality of light emitting devices may be manufactured. The chip separation process may include, for example, a breaking process of separating a chip by applying a physical force using a blade, a laser scribing process of separating a chip by irradiating a laser to a chip boundary, and a wet etching or a dry etching process. It may include an etching process, but is not limited thereto.

In an embodiment, the protective layer 140 is damaged by performing a laser scribing process through the ohmic layer 150, the reflective layer 160, and the barrier layer 170, which are conductive layers surrounding the protective layer 140. It can prevent.

According to the embodiment, the concave-convex pattern is formed between the ohmic layer 150 and the reflective layer 160 to increase the contact area of each other, thereby improving the reliability by increasing the adhesion between the ohmic layer and the reflective layer.

The embodiment can provide a high power, high efficiency light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system.

In addition, the embodiment can provide a light emitting device, a method of manufacturing a light emitting device, a light emitting device package and an illumination system with improved reliability.

11 is a cross-sectional view of a light emitting device package 200 according to the embodiment.

The light emitting device package 200 according to the embodiment may include a package body 205, a third electrode layer 213 and a fourth electrode layer 214 installed on the package body 205, and the package body 205. The light emitting device 100 is installed at and electrically connected to the third electrode layer 213 and the fourth electrode layer 214, and a molding member 240 surrounding the light emitting device 100 is included.

The package body 205 may include a silicon material, a synthetic resin material, or a metal material, and an inclined surface may be formed around the light emitting device 100.

The third electrode layer 213 and the fourth electrode layer 214 are electrically isolated from each other and provide power to the light emitting device 100. The third electrode layer 213 and the fourth electrode layer 214 may function to increase light efficiency by reflecting the light generated from the light emitting device 100, And may serve to discharge heat to the outside.

The light emitting device 100 may be a light emitting device according to the first embodiment illustrated in FIG. 1, but is not limited thereto. The light emitting device 102 according to the second embodiment of FIG. 2 may also be applied.

The light emitting device 100 may be installed on the package body 205 or on the third electrode layer 213 or the fourth electrode layer 214.

The light emitting device 100 may be electrically connected to the third electrode layer 213 and / or the fourth electrode layer 214 by a wire, flip chip, or die bonding method. The light emitting device 100 is electrically connected to the third electrode layer 213 through the wire 230 and is electrically connected to the fourth electrode layer 214 directly.

The molding member 240 may surround the light emitting device 100 to protect the light emitting device 100. In addition, the molding member 240 may include a phosphor to change the wavelength of the light emitted from the light emitting device 100.

A plurality of light emitting device packages according to the embodiment may be arranged on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, a fluorescent sheet, or the like, which is an optical member, may be disposed on a path of light emitted from the light emitting device package. The light emitting device package, the substrate, and the optical member may function as a backlight unit or function as a lighting unit. For example, the lighting system may include a backlight unit, a lighting unit, a pointing device, a lamp, and a streetlight.

12 is a perspective view 1100 of a lighting unit according to an embodiment. However, the lighting unit 1100 of FIG. 12 is an example of a lighting system, but is not limited thereto.

In the embodiment, the lighting unit 1100 is connected to the case body 1110, the light emitting module unit 1130 installed on the case body 1110, and the case body 1110 and receive power from an external power source. It may include a terminal 1120.

The case body 1110 may be formed of a material having good heat dissipation characteristics. For example, the case body 1110 may be formed of a metal material or a resin material.

The light emitting module unit 1130 may include a substrate 1132 and at least one light emitting device package 200 mounted on the substrate 1132.

The substrate 1132 may be a circuit pattern printed on an insulator, and for example, a general printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB, and the like. It may include.

In addition, the substrate 1132 may be formed of a material that reflects light efficiently, or the surface may be formed of a color that reflects light efficiently, for example, white, silver, or the like.

The at least one light emitting device package 200 may be mounted on the substrate 1132. Each of the light emitting device packages 200 may include at least one light emitting diode (LED) 100. The light emitting diodes 100 may include colored light emitting diodes emitting red, green, blue, or white colored light, and UV light emitting diodes emitting ultraviolet (UV) light.

The light emitting module unit 1130 may be disposed to have a combination of various light emitting device packages 200 to obtain color and luminance. For example, a white light emitting diode, a red light emitting diode, and a green light emitting diode may be combined to secure high color rendering (CRI).

The connection terminal 1120 may be electrically connected to the light emitting module unit 1130 to supply power. In an embodiment, the connection terminal 1120 is coupled to the external power source by a socket, but is not limited thereto. For example, the connection terminal 1120 may be formed in a pin shape and inserted into an external power source, or may be connected to the external power source by a wire.

13 is an exploded perspective view 1200 of a backlight unit according to an embodiment. However, the backlight unit 1200 of Fig. 13 is an example of the illumination system, and is not limited thereto.

The backlight unit 1200 according to the embodiment includes a light guide plate 1210, a light emitting module unit 1240 that provides light to the light guide plate 1210, a reflective member 1220 under the light guide plate 1210, and the light guide plate. 1210, a bottom cover 1230 for accommodating the light emitting module unit 1240 and the reflective member 1220, but is not limited thereto.

The light guide plate 1210 serves to surface light by diffusing light. The light guide plate 1210 is made of a transparent material, for example, an acrylic resin series such as polymethyl metaacrylate (PMMA), polyethylene terephthlate (PET), polycarbonate (PC), cycloolefin copolymer (COC), and polyethylene naphthalate (PEN). It may include one of the resins.

The light emitting module unit 1240 provides light to at least one side of the light guide plate 1210 and ultimately serves as a light source of a display device in which the backlight unit is installed.

The light emitting module unit 1240 may be in contact with the light guide plate 1210, but is not limited thereto. Specifically, the light emitting module 1240 includes a substrate 1242 and a plurality of light emitting device packages 200 mounted on the substrate 1242. The substrate 1242 is mounted on the light guide plate 1210, But is not limited to.

The substrate 1242 may be a printed circuit board (PCB) including a circuit pattern (not shown). However, the substrate 1242 may include not only a general PCB, but also a metal core PCB (MCPCB), a flexible PCB (FPCB), and the like.

The plurality of light emitting device packages 200 may be mounted on the substrate 1242 such that a light emitting surface on which light is emitted is spaced apart from the light guide plate 1210 by a predetermined distance.

The reflective member 1220 may be formed under the light guide plate 1210. The reflection member 1220 reflects the light incident on the lower surface of the light guide plate 1210 so as to face upward, thereby improving the brightness of the backlight unit. The reflective member 1220 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto.

The bottom cover 1230 may accommodate the light guide plate 1210, the light emitting module unit 1240, the reflective member 1220, and the like. For this purpose, the bottom cover 1230 may be formed in a box shape having an opened upper surface, but the present invention is not limited thereto.

The bottom cover 1230 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding.

The embodiment can provide a high power, high efficiency light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system.

In addition, the embodiment can provide a light emitting device, a method of manufacturing a light emitting device, a light emitting device package and an illumination system with improved reliability.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in each embodiment may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Accordingly, the contents of such combinations and modifications should be construed as being included in the scope of the embodiments.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention. It can be seen that the modification and application of branches are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that the present invention may be embodied in many other specific forms without departing from the spirit or essential characteristics thereof.

100: light emitting element, 190: support substrate
160: reflective layer, 150: ohmic layer 150
145: current blocking layer, 140: protective layer
135: light emitting structure

Claims (15)

Support substrates;
A reflective layer on the support substrate;
An ohmic layer on the reflective layer;
And a light emitting structure formed on the ohmic layer.
And a roughness at a portion of an interface between the reflective layer and the ohmic layer. The method according to claim 1,
The ohmic layer includes a transparent electrode layer,
Further comprising a current blocking layer formed in a partial region between the transparent electrode layer and the light emitting structure,
The unevenness is formed in the region vertically overlap with the current blocking layer. The method of claim 2,
Further comprising a protective layer on the outside between the transparent electrode layer and the light emitting structure,
The unevenness is formed in a region vertically overlapping with the protective layer. The method of claim 3,
The unevenness is further formed at an interface between the reflective layer and the ohmic layer between the protective layer and the current blocking layer. The method of claim 2,
The transparent electrode layer
Indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IZON (IZO Nitride), AGZO (Al-Ga ZnO), IGZO (In-Ga ZnO), ZnO, IrOx, RuOx, NiO, RuOx / ITO , Ni / IrOx / Au, and Ni / IrOx / Au / ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf device. The method according to claim 1,
The reflective layer
A light emitting device comprising at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf or their alloys. The method according to claim 1,
The reflective layer
A light emitting device comprising any one of indium zinc oxide (IZO) / Ni, aluminum zinc oxide (AZO) / Ag, IZO / Ag / Ni, AZO / Ag / Ni, Ag / Cu, Ag / Pd / Cu. The method of claim 2,
The transparent electrode layer
The light emitting device is formed along the interface step of the current blocking layer. The method according to claim 1,
The ohmic layer is formed with a thickness of 20nm ~ 50nm, the reflective layer is formed with a thickness of 180nm to 220nm. Forming a light emitting structure on the growth substrate;
Forming a protective layer and a current blocking layer on the light emitting structure corresponding to the unit chip region;
Forming an ohmic layer on the light emitting structure, the current blocking layer, and the protective layer;
Forming roughness on the ohmic layer; And
Forming a reflective layer on the ohmic layer; manufacturing method of a light emitting device comprising a. The method of claim 10,
Forming the irregularities on the ohmic layer,
And the concave-convex portion is formed at a portion of an interface between the reflective layer and the ohmic layer. 12. The method of claim 11,
The unevenness is a method of manufacturing a light emitting device is formed on the ohmic layer of the region vertically overlap with the current blocking layer. 12. The method of claim 11,
The unevenness is a method of manufacturing a light emitting device is formed on the ohmic layer of the region vertically overlapping with the protective layer. 12. The method of claim 11,
The unevenness is formed on the ohmic layer between the protective layer and the current blocking layer. The method of claim 10,
The unevenness is
Method of manufacturing a light emitting device formed by wet etching or dry etching a portion of the upper surface of the ohmic layer.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11320548B2 (en) 2018-05-30 2022-05-03 Nanokem Apparatus and method for detecting earthquake using accelerometer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11320548B2 (en) 2018-05-30 2022-05-03 Nanokem Apparatus and method for detecting earthquake using accelerometer

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