KR20170034629A - Light emitting device package, backlight unit and its manufacturing method - Google Patents

Light emitting device package, backlight unit and its manufacturing method Download PDF

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Publication number
KR20170034629A
KR20170034629A KR1020150133145A KR20150133145A KR20170034629A KR 20170034629 A KR20170034629 A KR 20170034629A KR 1020150133145 A KR1020150133145 A KR 1020150133145A KR 20150133145 A KR20150133145 A KR 20150133145A KR 20170034629 A KR20170034629 A KR 20170034629A
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KR
South Korea
Prior art keywords
light
light emitting
emitting device
wavelength band
phosphor
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KR1020150133145A
Other languages
Korean (ko)
Inventor
오승현
김평국
조성식
허민영
김윤호
Original Assignee
주식회사 루멘스
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Priority to KR1020150133145A priority Critical patent/KR20170034629A/en
Publication of KR20170034629A publication Critical patent/KR20170034629A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
    • F21K9/61—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using light guides
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
    • F21K9/64—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
    • F21V9/14—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters for producing polarised light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

Abstract

The present invention relates to a light emitting device package, a backlight unit, and a method of manufacturing a light emitting device package. A reflection member formed in a shape that surrounds the periphery of the light emitting device, wherein the reflective cup is formed to reflect light generated from the light emitting device; A phosphor disposed on the reflective member for photo-converting light generated from the light emitting device; And a wavelength adjusting member that absorbs light of a relatively first wavelength band among the lights passing through the phosphor and relatively emits and emits light of a second wavelength band.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device package, a backlight unit,

The present invention relates to a light emitting device package, a backlight unit, and a method of manufacturing a light emitting device package, and more particularly, to a light emitting device package, a backlight unit, and a method of manufacturing a light emitting device package will be.

A light emitting diode (LED) is a kind of semiconductor device that can emit light of various colors by forming a light emitting source through the formation of a PN diode of a compound semiconductor. Such a light emitting device has a long lifetime, can be reduced in size and weight, and can be driven at a low voltage. In addition, these LEDs are resistant to impact and vibration, do not require preheating time and complicated driving, can be packaged after being mounted on a substrate or lead frame in various forms, so they can be modularized for various purposes and used as a backlight unit A lighting device, and the like.

Conventionally, in addition to wafer level packaging (WLP), a multilayer ceramic package, a multi-chip package, a metal package, and a chip on board (COB), there are next generation light sources,

Chip Scale Package (CSP) is small compared to existing light emitting device packages, and can be formed with high density, which can lower cost, has advantages of simple process, heat resistance ability and uniformity of color.

Such a chip scale package is a technique for forming a light emitting device package in chip scale units. The chip scale package has a feature that a large number of light emitting devices are mounted on a substrate strip, the phosphors are applied in a batch, and singulated to form a package.

Accordingly, the size of the chip scale package has a size almost similar to or slightly larger than that of the light emitting device. These packages do not require additional submounts or substrates and can be connected directly to the board.

Meanwhile, in the conventional light emitting device packages, a blue LED that emits blue light is mounted, and some of the blue light is used as a source, and a part of the blue light is used as a green light (or a yellow light ), And a G + R phosphor (or a Y + R phosphor) in which a red phosphor for photo-converting another part of the blue light to red light is used to realize a white light source.

However, the spectral luminous flux of each wavelength of the light emitting device package manufactured by the conventional white conversion method is as follows. Blue light has a narrow half width and thus has high color purity and excellent color expressing power. However, white light and red light have a very wide half width, There is a problem in that the overlapping portions are widespread so that the color purity is relatively lowered and the color expression power and the color reproducibility of the display device using such a light emitting device package are greatly deteriorated.

Disclosure of Invention Technical Problem [7] The present invention has been made to solve the above-mentioned problems, and it is an object of the present invention to provide a method and apparatus for absorbing unnecessary wavelength band light in which green light and red light are superimposed and relatively strengthening green light or red light, It is possible to improve the color purity, color expressive power and color reproducibility, and it is possible to reduce the thermal stress, improve the reliability by fabricating in the chip scale package system, A light emitting device package capable of realizing a low price, a backlight unit, and a method of manufacturing a light emitting device package. However, these problems are exemplary and do not limit the scope of the present invention.

According to an aspect of the present invention, there is provided a light emitting device package including: a light emitting element; A reflection member formed in a shape that surrounds the periphery of the light emitting device, wherein the reflective cup is formed to reflect light generated from the light emitting device; A phosphor disposed on the reflective member for photo-converting light generated from the light emitting device; And a wavelength adjusting member that absorbs light of a relatively first wavelength band among the lights passing through the phosphor and relatively emits and emits light of a second wavelength band.

Further, according to the present invention, the wavelength adjusting member may be an organic dye sheet including an organic dye absorbing light in the orange wavelength band and enhancing light in the red wavelength band.

Also, according to the present invention, the organic dye sheet may include at least one organic dye component selected from perylene and naphthalimide.

In addition, according to the present invention, the wavelength adjusting member may include an organic fluorescent material of yellow # 1 color that absorbs light in a 476-nanometer wavelength band and strengthens light in a 490-nanometer wavelength band, light of 505- Absorbing and absorbing light in the 528 nanometer wavelength band, an organic phosphor in the yellow color # 2, absorbing light in the 524 nanometer wavelength band, and an orange-colored organic phosphor that enhances light in the 539 nanometer wavelength band, It absorbs light in the wavelength of the meter wavelength, absorbs light in the wavelength band of 578 nm, absorbs the light in the wavelength of 578 nm, and emits light in the red color, which strengthens the light in the wavelength band of 613 nm. Phosphor, an organic phosphor that absorbs light in the 378-nanometer wavelength band and emits a violet-colored organic phosphor that enhances light in the 413-nanometer wavelength band, absorbing light in the 377-nm wavelength band A green color organic phosphor that absorbs light in the 475 nanometer wavelength band, and a light in the 489 nanometer wavelength band, and combinations thereof And may include any one or more of them.

According to the present invention, the organic dye sheet is prepared by mixing 0.05 to 2.0 weight percent of a functional organic dye with 98.0 to 99.95 weight percent of a liquid binder containing at least one of silicon and epoxy, Micrometer < / RTI > thickness.

In addition, according to the present invention, the light emitting element is a flip chip type LED, and the reflecting member is a resin material coated or injection-molded so as to be in direct contact with the side surface of the light emitting element, And the phosphor and the wavelength adjusting member may be in the form of a CSP which is provided on the reflecting member and is cut at the same time as the reflecting member.

According to an aspect of the present invention, there is provided a backlight unit including: a light emitting element; A reflection member formed in a shape that surrounds the periphery of the light emitting device, wherein the reflective cup is formed to reflect light generated from the light emitting device; A phosphor disposed on the reflective member for photo-converting light generated from the light emitting device; A wavelength adjusting member which absorbs light of a first wavelength band relatively to the light passing through the phosphor and relatively emits the light of the second wavelength band and emits the light; And a light guide plate installed in a path of light generated in the light emitting device.

According to another aspect of the present invention, there is provided a method of fabricating a light emitting device package, the method comprising the steps of: absorbing light of a first wavelength band; irradiating light of a second wavelength band, Preparing a wavelength adjusting member sheet and a phosphor sheet for preparing a phosphor sheet capable of photo-converting light generated from the adjusting member sheet and the light emitting element; Attaching a plurality of the light emitting elements in a flip chip form so that the first pad and the second pad are exposed upward and bonding the light emitting elements to the adhesive layer formed on the upper surface of the phosphor sheet at regular intervals; A reflective member forming step of filling and curing a reflective member between the plurality of light emitting elements; And a singulation step of cutting the reflective member, the wavelength adjusting member sheet and the phosphor sheet along a cutting line (CL) so as to perform singulation with the unit light emitting device package.

According to some embodiments of the present invention as described above, it is possible to more suitably perform optical correction of light characteristics, thereby reducing interference between wavelengths, thereby improving color purity, color expressiveness, and color reproducibility , And chip scale package type to reduce thermal stress, improve reliability, and achieve low cost. Of course, the scope of the present invention is not limited by these effects.

1 is an exploded perspective view of a light emitting device package according to some embodiments of the present invention.
2 is an external perspective view of parts assembly of the light emitting device package of FIG.
FIGS. 3 to 7 are cross-sectional views illustrating steps of manufacturing the light emitting device package of FIG. 1. FIG.
8 is a flowchart illustrating a method of manufacturing a light emitting device package according to some embodiments of the present invention.
9 is a graph showing the amount of light per wavelength of the light emitting device package according to the conventional and various embodiments of the present invention.
10 is a color coordinate diagram of a conventional light emitting device package according to various embodiments of the present invention.
11 is a graph showing absorption bands and enhancement bands for respective wavelengths of a wavelength adjusting member of a light emitting device package according to some other embodiments of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

The embodiments of the present invention are described in order to more fully explain the present invention to those skilled in the art, and the following embodiments may be modified into various other forms, The present invention is not limited to the embodiment. Rather, these embodiments are provided so that this disclosure will be more thorough and complete, and will fully convey the concept of the invention to those skilled in the art. In the drawings, the thickness and size of each layer are exaggerated for convenience and clarity of explanation.

Hereinafter, embodiments of the present invention will be described with reference to the drawings schematically showing ideal embodiments of the present invention. In the figures, for example, variations in the shape shown may be expected, depending on the manufacturing technique or tolerance. Accordingly, the embodiments of the present invention should not be construed as limited to the particular shapes of the regions shown herein, but should include, for example, changes in shape resulting from manufacturing.

FIG. 1 is an exploded perspective view illustrating a light emitting device package 100 according to some embodiments of the present invention, and FIG. 2 is an external perspective view of a component assembly of the light emitting device package 100 of FIG.

1 and 2, a light emitting device package 100 according to some embodiments of the present invention includes a light emitting device 20, a reflective member 30, a phosphor 40, And may include a control member 50.

1 and 2, the light emitting device 20 includes a first pad P1 and a second pad P2, which are exposed downward, so as to be mounted on the substrate 10, Type LED.

For example, the light emitting device 20 described above may be a blue LED that generates blue light. In addition, it may be an LED that emits light of various wavelengths such as a red LED and a green LED, or an ultraviolet LED. However, the present invention is not limited to this, and various types of light emitting devices including various horizontal or vertical LEDs, various bumps, and signal transmission media such as wire or solder may be applied.

For example, the light emitting device 20 may be made of a semiconductor, and may be formed of a material such as InN, AlN, InGaN, AlGaN, or InGaN on a sapphire substrate for growth or a silicon carbide substrate by a vapor phase growth method such as MOCVD. A nitride semiconductor such as InGaAlN may be epitaxially grown. The light emitting device 20 may be formed using semiconductors such as ZnO, ZnS, ZnSe, SiC, GaP, GaAlAs, and AlInGaP in addition to the nitride semiconductor. These semiconductors can be stacked in the order of an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer. The light emitting layer or the active layer may be a laminated semiconductor including a multiple quantum well structure or a single quantum well structure or a laminated semiconductor of a double hetero structure. In addition, the light emitting device 20 can be selected to have any wavelength depending on applications such as display use and illumination use.

In addition, for example, the light emitting device 20 may be any one of CSP, WLP and a flip chip on which a phosphor may be mounted.

Here, CSP means that the chip area is more than 80% of the package area so that the package size can be close to the chip size or the semiconductor process is used for the package process or the chip area of the semiconductor component is as small as possible It can mean.

For example, it is also possible to cure phosphors, quantum dots (QDs) or encapsulants on a plurality of densely packed chips, and to singulate them and manufacture them in individual package units.

In addition, WLP is a new concept of packaging technology that combines silicon semiconductor process technology and light emitting diode (LED) technology, which can mean a package in which a hole is formed in a silicon wafer and the LED chip is packaged. In addition, the light emitting device package 20 is not limited thereto, and various types of light emitting devices or packages can be applied.

2, the light emitting device 20 is prepared to be mounted on the substrate 10 in various forms at any time. The substrate 10 may be a lead frame or a printed circuit board A printed circuit board (PCB) may be applied. However, the present invention is not limited to such a lead frame or a printed circuit board, but may be a metal substrate on which a surface is subjected to an insulation treatment and a wiring layer is formed. In addition, the substrate 10 can be applied to all of various types of substrates.

1 and 2, the reflection member 30 includes a reflective cup portion C at a center thereof so as to reflect light generated from the light emitting device 20, Or may be a resin material which is coated or injection-molded so as to directly contact the side surface of the light emitting device 20 in the form of surrounding the light emitting device 20.

More specifically, for example, the reflective member 30 may be a white EMC that is an insulating material and has excellent reflectivity. However, it is not necessarily limited thereto.

1 and 2, the phosphor 40 is provided on the reflective member 30 and includes a light conversion material for photo-converting the light generated in the light emitting device 20 .

For example, the phosphor 40 converts the blue light into a green light (or yellow light) by using blue light as a source so that a white light source can be realized by white conversion. And a G + R phosphor (or Y + R phosphor) in which a green phosphor for photo-conversion and a red phosphor for photo-converting another part of the blue light to red light are mixed.

More specifically, for example, the phosphor 40 may have the following composition formula and color.

Oxide system: yellow and green Y 3 Al 5 O 12 : Ce, Tb 3 Al 5 O 12 : Ce, Lu 3 Al 5 O 12 : Ce

(Ba, Sr) 2 SiO 4 : Eu, yellow and orange (Ba, Sr) 3 SiO 5 : Ce

The nitride-based: green colored β-SiAlO N: Eu, yellow color L 3 Si 6 O 11: Ce , orange-colored α-SiAlO N: Eu, red color CaAlSiN 3: Eu, Sr 2 Si 5 N 8: Eu, SrSiAl 4 N 7 : Eu

The composition of the phosphor should basically correspond to stoichiometry, and each element may be substituted with another element in each group on the periodic table. For example, Sr can be substituted with Ba, Ca, Mg, etc. of the alkaline earth (II) group and Y can be replaced with Tb, Lu, Sc, Gd etc. of the lanthanide series. Ce, Tb, Pr, Er, Yb and the like, and the active agent may be used alone or as a negative active agent for the characteristic modification.

The phosphor 40 may be used singly or in combination with quantum dots. The phosphor 40 may be used in combination with an oxide-based, nitride-based or silicate-based phosphor.

The quantum dot can be composed of a core (3 to 10 nm) such as CdSe or InP, a shell (0.5 to 2 nm) such as ZnS or ZnSe, and a ligand for stabilizing the core and shell. Can be implemented.

1 and 2, the wavelength adjusting member 50 absorbs light of a relatively first wavelength band among the lights passing through the phosphor 40, and the light of the second wavelength band That is, an organic dye sheet containing an organic dye that absorbs light in the orange wavelength band that is the light in the first wavelength band and strengthens light in the red wavelength band that is the second wavelength band .

For example, the organic dye sheet may include at least one organic dye component selected from perylene and naphthalimide.

More specifically, for example, such perylene is sublimated into bronze leaf crystals (recrystallized in toluene or acetic acid), melting point 273-274 占 폚, 350-400 占 폚, and acetic acid, chloroform , Which dissolves in carbon disulfide and is insoluble in benzene, ethanol, ether, acetone, and ligroin. A very dilute solution can emit blue fluorescence and dissolves in concentrated sulfuric acid to form a dark green solution. It is a substance that can turn into purple. Perylene is oxidized by chromium oxide (VI) in acetic acid to form perylene quinone.

In addition, the naphthalimide can be sublimed at needle temperature (recrystallized in ether or ethanol) at a melting point of 300 DEG C, 290 to 291 DEG C, and is dissolved in acetic acid, and is dissolved in benzene, ether, ethanol, , And a concentrated sulfuric acid solution can emit blue fluorescence. Can be dissolved in a warm, dilute aqueous solution of potassium hydroxide to form a potassium salt, which salt can be alkylated. When heated with hydrazine, it becomes N-aminonaphthalimide, which can be N-bromonaphthalimide with sodium hypobromite. However, such an organic dye sheet is not necessarily limited to the above components.

For example, the wavelength adjusting member 50 absorbs light in the wavelength band of 476 nanometers, absorbs light in the 505 nanometer wavelength band, and the organic phosphor in the yellow # 1 color that enhances light in the 490 nanometer wavelength band , An organic phosphor of yellow # 2 color that enhances light in the 528-nanometer wavelength band, an orange-colored organic phosphor that absorbs light in the 524-nanometer wavelength band and enhances light in the 539-nm wavelength band, a 547- A pink organic phosphor that absorbs light in the 580-nanometer wavelength band, an organic phosphor that absorbs light in the 578-nanometer wavelength band, and a red-colored organic phosphor that enhances light in the 613- It absorbs light of wavelength of 378 nanometers and absorbs light of wavelength of 377 nanometers, organic phosphor of violet color which strengthens light of 413 nanometer wavelength band, absorbs light of 411 nanometers The blue light of the blue wavelength, the green light of the organic phosphor that absorbs light in the wavelength band of 475 nanometers, and the light of the wavelength band of 489 nanometers, and combinations thereof. . Accordingly, the user can select suitable ones among the organic phosphors in consideration of the characteristics of the organic phosphors described above to optimize the components of the wavelength adjusting member 50 in the white conversion design.

Further, the wavelength adjusting member 50 may include 0.05 to 2.0 weight percent of a functional organic dye to 98.0 to 99.95 weight percent of a liquid binder containing at least one of silicon and epoxy so as to be suitable for use, that is, And may be an organic dye sheet having a thickness (T) of 50 micrometers to 300 micrometers by mixing the organic dye and the organic fluorescent material.

1 and 2, a light emitting device package 100 according to some embodiments of the present invention includes a light emitting device package 100 including a reflective member 30 and a phosphor 40, The phosphor 40 and the wavelength adjusting member 50 may be in the form of a chip scale package provided on the reflecting member 30 and cut at the same time as the reflecting member 30.

FIGS. 3 to 7 are cross-sectional views showing steps of manufacturing the light emitting device package 100 of FIG.

3 to 7, the manufacturing process of the light emitting device package 100 according to some embodiments of the present invention will be described in more detail. First, as shown in FIG. 3, A wavelength adjustment member sheet 5 capable of absorbing light in a wavelength band and capable of relatively intensifying and emitting light in a second wavelength band and a light guide plate 5 for emitting light generated in the light emitting device 20 on the wavelength adjustment member sheet 5 The phosphor sheet 4 can be prepared by photolithography. Here, the adhesive layer 60 may be formed on the upper surface of the phosphor sheet 4.

4, a plurality of the light emitting elements 20 in a flip chip form are turned upside down so that the first pad P1 and the second pad P2 are exposed upward, The adhesive layer 60 may be adhered at regular intervals.

Next, as shown in FIG. 5, the reflection member 30 may be filled and cured between the plurality of light emitting devices 20. [ At this time, a separate mold or a dispenser capable of supplying the reflective member 30 in a flowing state into the space between the light emitting devices 20 may be used.

6, the reflective member 30, the wavelength adjusting member sheet 5, and the phosphor sheet 4 are cut along a cutting line (not shown) so as to be singulated to the unit light emitting device package 100 CL) can be cut by various methods such as rotary blade cutting, blade cutting, laser cutting, and trim cutting.

Therefore, as shown in FIG. 7, the manufactured light emitting device packages 100 may be mounted on the substrate 10, a module substrate, or the like.

7, the backlight unit 1000 according to some embodiments of the present invention includes a first pad P1 and a second pad P2, which can be mounted on the substrate 10, And a reflective cup portion C for reflecting the light generated from the light emitting element 20 is formed on a surface of the light emitting element 20 and a reflection A phosphor 40 disposed on the reflective member 30 for photo-converting the light generated in the light emitting device 20 and a phosphor 40 disposed between the phosphor 30 and the phosphor 30, And a light guide plate 110 installed in a path of light generated in the light emitting device 20. The light guide plate 110 may include a light guide plate 110, have.

Here, the light emitting device 20, the reflecting member 30, the phosphor 40, and the wavelength adjusting member 50 may be formed of a light emitting device according to some embodiments of the present invention shown in FIGS. 1 and 2 The constitution and role of the elements of the element package 100 may be the same. Therefore, detailed description is omitted.

Also, the light guide plate 110 may be an optical member that can be made of a light-transmitting material to guide light generated from the light emitting device 20.

The light guide plate 110 may be installed in a path of light generated by the light emitting device 20 to transmit light generated by the light emitting device 20 over a wider area.

The light guide plate 110 may be made of polycarbonate, polysulfone, polyacrylate, polystyrene, polyvinyl chloride, polyvinyl alcohol, polynorbornene, polyester, or the like , And various light transmitting resin materials may be applied. In addition, the light guide plate 110 may be formed by various methods such as forming fine patterns, fine protrusions, diffusion films, or the like on the surface, or forming fine bubbles therein.

Although not shown, various diffusion sheets, prism sheets, filters, and the like may be additionally provided above the light guide plate 110. In addition, various display panels such as an LCD panel may be installed above the light guide plate 110. [

8 is a flowchart illustrating a method of manufacturing a light emitting device package 100 according to some embodiments of the present invention.

1 to 8, a method of manufacturing a light emitting device package 100 according to some embodiments of the present invention includes the steps of: absorbing light of a first wavelength band; A wavelength adjusting member sheet 5 for preparing a phosphor sheet 4 capable of light-converting the light generated in the light emitting device 20 and a phosphor sheet preparing step S1 A plurality of the light emitting elements 20 in the form of a flip chip are turned upside down so that the first pad P1 and the second pad P2 are exposed upwardly to face the adhesive layer 60 formed on the upper surface of the phosphor sheet 4 (S3) for filling and curing the reflective member (30) between a plurality of the light emitting devices (20), and a unit light emitting device package (100) Lt; RTI ID = 0.0 > May include a member 30 and, the wavelength control member sheet 5 and the singulation step (S4) is cut along a cutting line (CL) of the phosphor sheet (4).

FIG. 9 is a graph showing the amount of light for each wavelength of the light emitting device package 100 according to the conventional and various embodiments of the present invention, and FIG. 10 is a graph showing the light amount of the light emitting device package 100 according to the conventional and various embodiments of the present invention. The color coordinates are also shown.

Therefore, as shown in FIG. 9, in the conventional case (# 1) in which the wavelength adjusting member is not used, the half width of the blue light is very narrow and the area where the green light and the red light overlap is wide, Similarly, when various wavelength adjusting members are applied, even if the amount of light is reduced, the degree of optical separation increases, and the area where the green light and the red light overlap each other is reduced. As a result, as shown in FIG. 10, It was confirmed that it was improved.

11 is a graph showing absorption bands and enhancement bands for respective wavelengths of the wavelength adjusting member 50 of the light emitting device package 100 according to some other embodiments of the present invention.

As shown in FIG. 11, the wavelength adjusting member 50 absorbs light in the left band, such as the left solid line, between about 500 nanometers and 550 nanometers in the case of a yellow organic fluorescent material (Yellow) And the light in the right side band can be strengthened as shown by the right dotted line. For example, in the case of a red organic phosphor (Red), the light in the left band, such as the solid line on the left side, from about 550 nanometers to 650 nanometers, And light of the right side band can be strengthened like the right dotted line. Therefore, it is possible to optimize the color reproduction power by controlling the wavelength by selecting organic dyes and organic phosphors bonded to each other in accordance with optical characteristics.

While the present invention has been described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims. Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims.

Claims (8)

A light emitting element;
A reflection member formed in a shape that surrounds the periphery of the light emitting device, wherein the reflective cup is formed to reflect light generated from the light emitting device;
A phosphor disposed on the reflective member for photo-converting light generated from the light emitting device; And
A wavelength adjusting member which absorbs light of a first wavelength band relatively to the light passing through the phosphor and relatively emits the light of the second wavelength band and emits the light;
Emitting device package. The method according to claim 1,
Wherein the wavelength adjustment member is an organic dye sheet including an organic dye absorbing light in an orange wavelength band and enhancing light in a red wavelength band. The method according to claim 1,
Wherein the organic dye sheet comprises at least one organic dye component selected from the group consisting of perylene and naphthalimide. The method according to claim 1,
The wavelength adjusting member absorbs light in the wavelength band of 476 nanometers, absorbs light in the wavelength band of 505 nanometers, absorbs light in the yellow # 1 color and strengthens light in the wavelength band of 490 nanometers, absorbs light in the wavelength range of 528 nanometers The light of the band absorbs light of 547 nm wavelength, organic phosphor of yellow # 2 color which strengthens the light of the band, orange color organic phosphor which absorbs light of 524 nm wavelength band and strengthens light of 539 nm wavelength band , An organic phosphor of pink color that enhances light in the 580-nanometer wavelength band, an organic phosphor that absorbs light in the 578-nanometer wavelength band and enhances light in the 613-nm wavelength band, a 378-nm wavelength band And absorbs light in a wavelength band of 377 nanometers, and absorbs light of a wavelength of 411 nanometers. Wherein the light of the blue phosphor is a blue organic phosphor that absorbs light in a wavelength band of 475 nanometers and a green organic phosphor that emits light in a wavelength band of 489 nanometers, A light emitting device package. 3. The method of claim 2,
Wherein the organic dye sheet comprises a mixture of 98.0 to 99.95 weight percent of a liquid binder containing at least one of silicon and epoxy and 0.05 to 2.0 weight percent of a functional organic dye to a thickness of 50 micrometers to 300 micrometers, A light emitting device package. The method according to claim 1,
The light emitting device is a flip chip type LED,
Wherein the reflective member is a resin material coated or injection molded so as to be in direct contact with a side surface of the light emitting device,
An adhesive layer is provided between the reflective member and the phosphor,
Wherein the phosphor and the wavelength adjusting member are of CSP type which is provided on the reflecting member and is cut at the same time as the reflecting member. A light emitting element;
A reflection member formed in a shape that surrounds the periphery of the light emitting device, wherein the reflective cup is formed to reflect light generated from the light emitting device;
A phosphor disposed on the reflective member for photo-converting light generated from the light emitting device;
A wavelength adjusting member which absorbs light of a first wavelength band relatively to the light passing through the phosphor and relatively emits the light of the second wavelength band and emits the light; And
A light guide plate installed in a path of light generated in the light emitting device;
. ≪ / RTI > A wavelength adjusting member sheet capable of relatively absorbing light of a first wavelength band and capable of emitting light by relatively intensifying light of a second wavelength band and a wavelength adjusting member capable of emitting light having a wavelength Preparing a regulating member sheet and a phosphor sheet;
Attaching a plurality of the light emitting elements in a flip chip form so that the first pad and the second pad are exposed upward and bonding the light emitting elements to the adhesive layer formed on the upper surface of the phosphor sheet at regular intervals;
A reflective member forming step of filling and curing a reflective member between the plurality of light emitting elements; And
A singulation step of cutting the reflective member, the wavelength adjusting member sheet, and the fluorescent material sheet along a cutting line so as to perform singulation with the unit light emitting device package;
Emitting device package.
KR1020150133145A 2015-09-21 2015-09-21 Light emitting device package, backlight unit and its manufacturing method KR20170034629A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180120389A (en) * 2017-04-27 2018-11-06 주식회사 루멘스 LED pixel device having flip-chip structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180120389A (en) * 2017-04-27 2018-11-06 주식회사 루멘스 LED pixel device having flip-chip structure

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