JP2000031531A - Light emitter - Google Patents

Light emitter

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Publication number
JP2000031531A
JP2000031531A JP19900298A JP19900298A JP2000031531A JP 2000031531 A JP2000031531 A JP 2000031531A JP 19900298 A JP19900298 A JP 19900298A JP 19900298 A JP19900298 A JP 19900298A JP 2000031531 A JP2000031531 A JP 2000031531A
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Prior art keywords
light
wavelength
phosphor
light emitting
emitting device
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JP19900298A
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Japanese (ja)
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JP3645422B2 (en
Inventor
Chisato Furukawa
Hideto Sugawara
Nobuhiro Suzuki
川 千 里 古
原 秀 人 菅
木 伸 洋 鈴
Original Assignee
Toshiba Corp
Toshiba Electronic Engineering Corp
東芝電子エンジニアリング株式会社
株式会社東芝
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Priority to JP19900298A priority Critical patent/JP3645422B2/en
Publication of JP2000031531A publication Critical patent/JP2000031531A/en
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Publication of JP3645422B2 publication Critical patent/JP3645422B2/en
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/49105Connecting at different heights
    • H01L2224/49107Connecting at different heights on the semiconductor or solid-state body

Abstract

PROBLEM TO BE SOLVED: To provide a light emitter which has stable light emission property by putting the mixture ratio of light surely and easily in desired balance. SOLUTION: This light emitter is equipped with a light emitting element 11 which emits the primary light of first wavelength, and a first phosphor 17 which absorbs the primary light and emits the secondary light of second wavelength, a second phosphor 18 which absorbs the secondary light of the second wavelength and emits the secondary light of the third wavelength. Then, the second phosphor 18 stabilizes the balance of an obtained light spectrum by being constituted as one which is low in absorptivity to the first wavelength and substantially does not converts the wavelength, and even if the wavelength of the primary light emitted from the light emitting element or the intensity change, the obtained light spectrum does not change.

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【発明の属する技術分野】本発明は発光装置に関し、特に半導体発光素子などの発光素子と蛍光体などの波長変換手段とを組み合わせた発光装置に関する。 The present invention relates to relates to a light emitting device, a light emitting device, particularly a combination of a wavelength conversion means such as a light emitting element and a phosphor, such as a semiconductor light-emitting device.

【0002】 [0002]

【従来の技術】LED(light emitting diode:発光ダイオード)などの半導体発光素子と蛍光体とを組み合わせた発光装置は、安価で長寿命な発光装置として注目され、広く用いられつつある。 BACKGROUND OF THE INVENTION LED (light emitting diode: light emitting diode) semiconductor light-emitting element and a light-emitting device combining a phosphor, such as is noted as a long-lifetime light-emitting device at low cost, are being widely used. 特に、白色の発光装置は、 In particular, the white light emitting device,
蛍光灯に変わる発光装置として、あるいは表示装置用の光源としてさまざまな用途が期待されている。 As a light-emitting device changes in a fluorescent lamp, or have various applications are expected as a light source for a display device.

【0003】図6は、従来の白色発光型の発光装置の概念構成を表す概略断面図である。 [0003] Figure 6 is a schematic sectional view showing a conceptual configuration of a conventional white light emitting type light emitting device. すなわち、従来の発光装置は、リードフレーム116のカップ部に青色発光L That is, the conventional light-emitting device, blue light emission in the cup of the lead frame 116 L
ED111がマウントされ、その周囲が樹脂112によりモールドされている。 ED111 is mounted, the periphery thereof is molded with resin 112. そして、LED111はワイア114により、適宜配線されている。 Then, LED 111 by wire 114, are appropriate wiring. また、樹脂112 The resin 112
の上には蛍光体117が塗布されている。 Phosphor 117 is applied on top of. そして、さらにその周囲が封止樹脂113により封止されている。 Then, it is sealed further sealing the periphery thereof with a sealing resin 113.

【0004】図6の発光装置においては、青色発光LE [0004] In the light emitting device of FIG. 6, the blue light-emitting LE
D111から放出された1次光の青色光の一部が蛍光体117に吸収され、2次光として黄色光が放出される。 Some of the blue light emitted primary light from D111 is absorbed by the phosphor 117, the yellow light is emitted as the secondary light.
つまり、LED111から放出される青色光と、蛍光体117から放出される黄色光とにより、白色発光を生ずる。 That is, the blue light emitted from the LED 111, the yellow light emitted from the phosphor 117, produce white light.

【0005】 [0005]

【発明が解決しようとする課題】しかし、本発明者の試作・評価の結果、図6のような従来の発光装置には、以下に挙げる問題があることが判明した。 [SUMMARY OF THE INVENTION However, as a result of the trial production and evaluation of the present inventors, the conventional light emitting device shown in FIG 6, it was found that there is a problem mentioned below. すなわち、 (1)装置毎のホワイトバランスのばらつきが大きい。 That is, a large variation in the white balance for each (1) device. (2)供給する電流値の変化によるホワイトバランスの変化が大きい。 (2) large changes in white balance due to changes in the current value supplied. (3)周囲温度の変動によるホワイトバランスの変化が大きい。 (3) a large change in the white balance due to changes in ambient temperature. (4)LED111の経時変化によるホワイトバランスの変化が大きい。 (4) a large change in the white balance due to aging of the LED 111.

【0006】これらの問題は、いずれも、半導体発光素子として用いている青色発光LED111が有する本質的な特性に起因している。 [0006] These problems are all is due to the essential characteristic of the blue-emitting LED111 is used as the semiconductor light-emitting device. すなわち、青色発光LED1 That is, the blue light emitting LED1
11の発光層として用いられている窒化インジウム・ガリウム(InGaN)は、その組成の厳密な制御が難しく、成長ウェーハ毎に発光波長が変動する傾向がある。 11 and indium gallium nitride used as the light-emitting layer (InGaN), the strict control is difficult in the composition, the emission wavelength for each growth wafer tends to vary.
また、LEDに供給する電流や温度によって発光波長が比較的大きく変動するという特性を有する。 Also it has a characteristic that the emission wavelength by the current and temperature supplied to the LED varies relatively greatly. さらに、電流を供給して発光動作を継続すると、発光波長が変動する傾向がみられる。 Further, when continuing the light emitting operation by supplying a current, it tends to emission wavelength is varied is observed.

【0007】このようにして、青色発光LED111から放出される青色光の波長が変動すると、蛍光体17から放出される黄色光との強度のバランスがくずれて色度座標が大きくずれてしまう。 [0007] In this way, when the wavelength of the blue light emitted from the blue light emitting LED111 varies, the chromaticity coordinates collapses strength balance of the yellow light emitted from the phosphor 17 is largely displaced. その結果として、出力される白色光のホワイトバランスが大きく変化するという問題が生ずることが判明した。 As a result, a problem that the white balance of white light varies significantly occurs has been found to be outputted.

【0008】この問題を解決する方法として、R(赤) [0008] As a method for solving this problem, R (red)
G(緑)B(青)の3色の発光を生ずる蛍光体を使う方法もある。 G (green) B also how to use a phosphor that produces a light emission of three colors (blue) there. しかし、この場合には、3種類の蛍光体の配合比の精密な調整が必要となり、所定のバランスで混合することは容易ではないという欠点があった。 However, in this case, three kinds of phosphors requires precise adjustment of the mixing ratio of, has a drawback that it is not easy to mix in a predetermined balance. また、蛍光体を混合して塗布する場合に、それぞれの蛍光体粒子の比重の違いに起因する分離の影響で、所望の均一な混合形態を実現することが難しいという欠点もあった。 Further, in the case of applying a mixture of phosphors, the effect of separation due to the difference in specific gravity of each phosphor particle was a drawback that it is difficult to realize the desired uniform mixing forms.

【0009】本発明は、かかる独自の課題の認識に基づいてなされたものである。 [0009] The present invention has been made based on recognition of such unique challenges. すなわち、その目的は、光の混合比を確実且つ容易に所望のバランスにし、安定した発光特性を有する発光装置を提供することにある。 That is, its object is the mixing ratio of the light to reliably and easily desired balance is to provide a light emitting device having a stable emission characteristics.

【0010】 [0010]

【課題を解決するための手段】上記目的を達成するために、本発明の発光装置は、第1の波長の光を放出する発光素子と、前記第1の波長の光を吸収して第2の波長の光を放出する第1の波長変換手段と、前記第2の波長の光を吸収して第3の波長の光を放出する第2の波長変換手段と、を備えたことを特徴とし、発光素子から放出される第1の波長が変動しても、第2の波長の光と第3の波長の光のバランスを安定させることができる。 To achieve the above object, according to the Invention The light-emitting device of the present invention, a light emitting element for emitting light of a first wavelength, the second absorbing light of the first wavelength and a first wavelength converting means for emitting light of a wavelength, a second wavelength conversion means for emitting light of the second absorbing light having a wavelength third wavelength, comprising the the , be varied first wavelength emitted from the light emitting element, the balance of light of the light and the third wavelength of the second wavelength can be stabilized.

【0011】ここで、前記第2の波長は、前記第1の波長よりも長く、前記第3の波長は、前記第2の波長よりも長く、前記第2の波長変換手段は、前記第1の波長の光を実質的に吸収しないことを特徴とすることにより、 [0011] Here, the second wavelength, the first longer than the wavelength, the third wavelength, said second longer than the wavelength, the second wavelength conversion means, said first by characterized in that it does not substantially absorb light of a wavelength,
第2の波長の光と第3の波長の光のバランスを極めて安定させることができる。 It can very stabilize the balance of light of the light and the third wavelength of the second wavelength.

【0012】また、本発明の望ましい実施の態様としては、前記第1の波長変換手段は、蛍光体であり、前記第2の波長変換手段は、蛍光体であることを特徴とする。 [0012] The preferred embodiment of the present invention, the first wavelength conversion means is a phosphor, the second wavelength conversion means, characterized in that it is a phosphor.

【0013】さらに、前記第1の波長の光は、紫外光であり、前記第2の波長の光は、青色光であり、前記第3 Furthermore, light of the first wavelength is ultraviolet light, the light of the second wavelength is blue light, the third
の波長の光は、黄色光であることを特徴とすることにより、ホワイトバランスが極めて安定した白色光を得ることができる。 Light having a wavelength of, by which is a yellow light, it is possible to obtain white light white balance very stable.

【0014】また、前記発光素子は、窒化物半導体からなる半導体発光素子であることを特徴とすることにより、高輝度の発光装置を実現することができる。 Further, the light emitting element, by being a semiconductor light-emitting device made of nitride semiconductor, it is possible to realize a light emitting device with high luminance.

【0015】 [0015]

【発明の実施の形態】以下、図面を参照しつつ本発明の実施の形態について説明する。 BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention are described with reference to the drawings. 図1は、本発明の実施の形態にかかる発光装置の概念構成を表す断面図である。 Figure 1 is a cross-sectional view showing a conceptual configuration of a light emitting device according to the embodiment of the present invention.
すなわち、同図の発光装置は、一般に「縦形LED」と呼ばれるものであり、リードフレーム16のカップ部に発光素子11がマウントされ、その周囲が樹脂12によりモールドされている。 That is, the light-emitting device of the figure, generally is called "vertical LED", is the light emitting element 11 is mounted in the cup of the lead frame 16, the periphery thereof is molded by the resin 12. 樹脂12は、発光素子11から放出される光の吸収の少ない材料により構成することが望ましい。 Resin 12 is preferably configured by a material having less absorption of light emitted from the light emitting element 11. 発光素子11はワイア14により、適宜配線されている。 Emitting element 11 by wire 14, it is appropriately wiring. また、樹脂12の上には第1の波長変換手段18と第2の波長変換手段17とが設けられている。 Further, on the resin 12 and the first wavelength converting means 18 and the second wavelength conversion means 17 is provided.
そして、さらにその周囲が封止樹脂13により封止されている。 Then, it is sealed further sealing the periphery thereof with a sealing resin 13.

【0016】ここで、第1の波長変換手段18は、発光素子11から放出される第1の波長の光を吸収してそれよりも長い第2の波長の光に変換する。 [0016] Here, the first wavelength conversion unit 18 converts the first of the second wavelength longer than that absorbs light of wavelengths of light emitted from the light emitting element 11. 例えば、発光素子11として紫外光を放出するLEDを用いた場合には、その紫外光により励起されて青色の2次光を放出する蛍光体とすることができる。 For example, in the case of using an LED which emits ultraviolet light as a light-emitting element 11 may be a phosphor which is excited by the ultraviolet light to emit blue secondary light.

【0017】一方、第2の波長変換手段17は、第1の波長変換手段18から放出された第2の波長を有する2 Meanwhile, the second wavelength converting means 17 2 having a second wavelength emitted from the first wavelength converter 18
次光を吸収してそれよりも長い第3の波長の2次光に変換する。 Absorbs order light is converted into secondary light of longer third wavelength than that. 第2の波長変換手段17としては、例えば、蛍光体18から放出される青色光により励起されて黄色の2次光を放出する蛍光体とすることができる。 The second wavelength conversion means 17, for example, be a phosphor which is excited by blue light emitted from the phosphor 18 to emit secondary light yellow. ここで、 here,
蛍光体17は、発光素子11から放出される第1の波長の光に対する吸収率は低いことを特徴とする。 Phosphor 17, absorptance for light of a first wavelength emitted from the light emitting element 11 is characterized low. つまり、 That is,
蛍光体17は、蛍光体18から放出される2次光の波長領域において吸収率のピークを有するものであることが望ましい。 Phosphor 17 is desirably one having a peak of the absorption rate in the wavelength region of the secondary light emitted from the phosphor 18.

【0018】上述の具体例に沿って説明すれば、本発明の発光装置においては、紫外線発光LED11から放出された1次光の紫外光が蛍光体17に吸収され、2次光として青色光が放出される。 [0018] If described with reference to the above examples, the light-emitting device of the present invention, ultraviolet light of the primary light emitted from the ultraviolet light emitting LED11 is absorbed by the phosphor 17, the blue light as the secondary light It is released. そして、その青色光の一部が蛍光体17に吸収されて2次光として黄色光が放出される。 Then, part of the blue light yellow light is emitted as being absorbed by the phosphor 17 secondary light. 蛍光体17は、LED11から放出される紫外光に対しては、吸収率が低く、実質的に波長変換を生じない。 Phosphor 17 is, for ultraviolet light emitted from the LED 11, a low absorption rate, does not result in substantial wavelength conversion. そして、蛍光体18から放出される青色光と、蛍光体17から放出される黄色光とにより、白色発光を生ずる。 Then, the blue light emitted from the phosphor 18, the yellow light emitted from the phosphor 17, resulting in white light.

【0019】本発明において用いることができる蛍光体の例としては、紫外光により励起される青色発光蛍光体18としては、例えば東芝製型式801EJがある。 [0019] Examples of phosphors that may be used in the present invention, as the blue-emitting phosphor 18 which is excited by ultraviolet light, for example, a Toshiba model 801EJ. なお、801EJの比重は4.2である。 It should be noted that the specific gravity of 801EJ is 4.2. 一方、青色光により励起される黄色発光蛍光体17としては、YAG On the other hand, the yellow emitting phosphor 17 is excited by the blue light, YAG
(Ce)すなわち(Y 1-a Gd a3 (Al 1-b Ga b5 (Ce) i.e. (Y 1-a Gd a) 3 (Al 1-b Ga b) 5 O
12 :Ceがある。 12: there is Ce. なお、YAG(Ce)の比重も約4. Incidentally, specific gravity of about 4 YAG (Ce).
2である。 2.

【0020】蛍光体17、18の層の作り方の一例としては、以下の方法を挙げることができる。 [0020] As an example of how to make the layer of the phosphor 17, 18 may be mentioned the following method. (1)801EJをキャスティングする。 (1) casting a 801EJ. すなわち、溶媒に蛍光体を分散させ、樹脂12の表面に塗布して加熱することによりキュアして硬化させる。 That is, the solvent a phosphor is dispersed in, and cured is cured by heating is applied to the surface of the resin 12. このようにして青色蛍光体18の層を形成することができる。 It is possible to form a layer of the blue phosphor 18 in this way. 次に、同様にして、その上にYAG(Ce)をキャスティングする。 Next, in the same way, casting a YAG (Ce) thereon. この一連の方法は蛍光体の比重の大小関係に無関係に用いることができる。 This series of method can be used regardless of the magnitude relation between the specific gravity of the phosphor. (2)801EJを溶かした溶媒と、YAG(Ce)を溶かした溶媒とを樹脂12の表面に滴下する。 (2) a solvent which dissolved 801EJ, and a solvent was dissolved YAG (Ce) is added dropwise to the surface of the resin 12. この際に、蛍光体粒子の比重や、溶媒の粘性と硬化速度などを考慮して、相分離により801EJがYAG(Ce)よりも下の層になるように設計する。 At this time, the specific gravity and the phosphor particles, etc. in consideration of the viscosity and cure rate of the solvent, 801EJ by phase separation is designed to be a layer below the YAG (Ce). 本発明によれば、L According to the present invention, L
ED11から放出された1次光は蛍光体18のみにより波長変換され、青色光に変換される。 Primary light emitted from the ED11 is wavelength-converted by the phosphor only 18, it is converted into blue light. 蛍光体17は、L Phosphor 17, L
ED11から放出される紫外光を実質的に波長変換しない。 It does not substantially wavelength converting ultraviolet light emitted from the ED11. この特徴により、極めて安定したホワイトバランスを得ることができる。 This feature makes it possible to obtain a very stable white balance.

【0021】ここで、仮に、蛍光体17と蛍光体18の両方がLED11から放出される紫外光をそれぞれ波長変換する場合を想定する。 [0021] Here, if both of the phosphor 17 and the phosphor 18 is assumed that each wavelength converting ultraviolet light emitted from the LED 11. このような場合には、図6に関して前述したように、LED11の発光波長が変動した場合に、ホワイトバランスが変動するという問題を生ずる。 In such a case, as described above with reference to FIG. 6, when the emission wavelength of LED11 varies, causing a problem that the white balance varies. 何故ならば、蛍光体17と蛍光体18の吸収率の波長依存性を同一とすることは技術的に不可能に近い。 Because it is almost technically impossible to have the same wavelength dependency of the absorptance of the phosphor 17 and the phosphor 18.
両者の吸収スペクトルが異なる結果として、LED11 As a result of the absorption spectra of both are different, LED 11
から放出される1次光の波長が変動した場合には、蛍光体17と蛍光体18にそれぞれ吸収される光成分のバランスが変化し、変換されて放出される2次光のバランスも変化するからである。 Wavelength of the primary light emitted is when variations, the balance of the light components is changed to be absorbed respectively the phosphor 17 and the phosphor 18 also changes the balance of the secondary light is converted to released from it is from.

【0022】これに対して、本発明によれば、LED1 [0022] On the other hand, according to the present invention, LED1
1から放出された1次光は蛍光体18のみにより波長変換され、青色光に変換される。 Primary light emitted from the 1 is wavelength-converted by the phosphor only 18, it is converted into blue light. 蛍光体17は、LED1 Phosphor 17, LED1
1から放出される紫外光を実質的に波長変換しない。 1 does not substantially wavelength converting ultraviolet light emitted from the. 図6に関して前述したような種々の要因によりLED11 By various factors as described above with respect to FIG. 6 LED 11
の発光波長が変動しても、蛍光体18から放出される青色光の波長が変動することはない。 Even if the emission wavelength variation in never wavelength of blue light emitted from the phosphor 18 is changed. そして、その青色光の一部が蛍光体17により黄色光に変換される。 Then, part of the blue light is converted into yellow light by the phosphor 17. つまり、本発明によれば、発光装置から外部に放出される青色光と黄色光のバランスは、蛍光体17と蛍光体18との混合比のみに依存し、LED11の発光波長や発光強度には依存せず、極めて安定している。 That is, according to the present invention, the balance of blue light and yellow light emitted from the light emitting device to the outside, depends only on the mixing ratio of the phosphor 17 and the phosphor 18, the light emission wavelength and the emission intensity of LED11 is independent, is extremely stable.

【0023】このように、本発明によれば、外部に取り出される青色光と黄色光とは、いずれも極めて安定した波長スペクトルを有し、その結果として得られる白色光のホワイトバランスも極めて安定する。 According to this manner, the present invention, the blue light and yellow light is extracted to the outside, both have a very stable wavelength spectrum, very stable white balance of the obtained white light as a result .

【0024】また、3色の蛍光体を用いる場合には、配合比の精密な調整が必要とされ、ホワイトバランスを再現することが容易でないが、本発明によれば、2色の蛍光体のみを用いる点で、蛍光体の配合比の調整がはるかに容易である。 [0024] In the case of using the phosphors of three colors are required precise adjustment of the mixing ratio, but it is not easy to reproduce the white balance, according to the present invention, 2-color phosphor only in terms of using, it is much easier adjustment of the mixing ratio of the phosphor.

【0025】本発明において用いることができる紫外発光LED11としては、窒化インジウム・アルミニウム・ガリウムIn x Al y Ga 1-xy N(0≦x<1、0≦y [0025] As the ultraviolet light emitting LED11 which can be used in the present invention, indium nitride aluminum gallium In x Al y Ga 1-xy N (0 ≦ x <1,0 ≦ y
<1)を活性層とした窒化物半導体発光素子を挙げることができる。 <1) can be exemplified nitride semiconductor light emitting device and the active layer.

【0026】なお、本願において「窒化物半導体」とは、B x In y Al z Ga (1-xyz) N(O≦x≦1、O≦ [0026] Note that the term "nitride semiconductor" in the present application, B x In y Al z Ga (1-xyz) N (O ≦ x ≦ 1, O ≦
y≦1、O≦z≦1)のIII−V族化合物半導体を含み、さらに、V族元素としては、Nに加えてリン(P) Include y ≦ 1, III-V group compound semiconductor O ≦ z ≦ 1), further, as the group V element, in addition to the N phosphorus (P)
や砒素(As)などを含有する混晶も含むものとする。 Also included mixed crystal containing such or arsenic (As).

【0027】図2は、この半導体発光素子の概念構成を表す概略断面図である。 [0027] FIG. 2 is a schematic sectional view showing a conceptual configuration of the semiconductor light-emitting device. 同図の発光素子の積層構造は以下の通りである。 Stacked structure of a light-emitting element in the figure is as follows. なおドーピング材料、膜厚等は必要に応じて適宜変化させても良い。 Note doping material, film thickness and the like may be changed as necessary. (1)サファイア基板131 (2)GaNバッファ層132 (3)膜厚4μmのn型GaNコンタクト層133 (4)膜厚200μmのn型AlGaNクラッド層13 (1) a sapphire substrate 131 (2) GaN buffer layer 132 (3) n-type GaN contact layer 133 having a thickness of 4 [mu] m (4) n-type film thickness 200 [mu] m AlGaN cladding layer 13
4 (5)膜厚50μmのInGaN活性層135。 4 (5) having a thickness of 50 [mu] m InGaN active layer 135. なおここで活性層にドーピングを行ったり、あるいは活性層を多重量子井戸(MQW)などの多層膜にしても良い。 Note here or perform doping to the active layer, or the active layer may be a multilayer film such as a multiple quantum well (MQW) a. (6)膜厚200μmのp型AlGaNクラッド層13 (6) having a thickness of 200 [mu] m p-type AlGaN cladding layer 13
6 (7)膜厚50μmのp型GaNコンタクト層137 以上説明した積層構造は、同図に示すようにその一部が表面からn型コンタクト層133にまでエッチングされ、n側電極141が設けられている。 6 (7) layered structure described thickness 50μm of p-type GaN contact layer 137 or more, a portion as shown in the figure are etched from the surface to the n-type contact layer 133 is provided with an n-side electrode 141 ing. また、p型コンタクト層137の上に透過性を有するp側電極143が設けられている。 Further, p-side electrode 143 which is transparent on the p-type contact layer 137 is provided. さらに、それぞれの電極にはボンディングパッド142及び144が接続され、素子の表面は保護膜145及び146で覆われている。 Furthermore, the respective electrodes are connected bonding pads 142 and 144, the surface of the device is covered with a protective layer 145 and 146.

【0028】なお、基板131の材料は、サファイアに限定されず、その他にも、例えば、スピネル、MgO、 [0028] The material of the substrate 131 is not limited to sapphire, Besides, for example, spinel, MgO,
ScAlMgO 4 、LaSrGaO 4 、(LaSr)(A ScAlMgO 4, LaSrGaO 4, (LaSr ) (A
lTa)O 3などの絶縁性基板や、SiC、Si、Ga LTA) or an insulating substrate such as O 3, SiC, Si, Ga
As、GaNなどの導電性基板も同様に用いてそれぞれの効果を得ることができる。 As, it can be obtained each effect using similarly conductive substrate such as GaN. ここで、ScAlMgO 4 Here, ScAlMgO 4
基板の場合には、(0001)面、(LaSr)(Al If the substrate is (0001) plane, (LaSr) (Al
Ta)O 3基板の場合には(111)面を用いることが望ましい。 Ta) in the case of O 3 substrate be used (111) plane desirable.

【0029】図2に例示したLED11は、活性層13 The LED11 illustrated in Figure 2, the active layer 13
5のインジウム(In)のIII族元素の中で占める組成を2〜3%程度にすると、波長約370〜375nm程度の紫外光を高い発光強度で放出する。 When the composition occupied in the III group elements 5 of indium (In) to about 2-3%, to emit ultraviolet light having a wavelength of about about 370~375nm at high emission intensity. このようなLE Such a LE
Dと、紫外光により励起される青色発光蛍光体と、青色光により励起される黄色発光蛍光体とを組み合わせた白色発光装置は、ホワイトバランスの均一性、安定性に極めて優れる。 And D, a blue-emitting phosphor excited by ultraviolet light, the white light-emitting device combining a yellow light emitting phosphor excited by the blue light, the uniformity of the white balance, very excellent stability. すなわち、蛍光体の発光波長は蛍光体を励起させる光の強度・波長によらず一定であるため、半導体発光素子の特性にばらつきがあっても、発光装置の波長は一定になる。 That is, since the emission wavelength of the phosphor is constant regardless of the strength and wavelength of the light which excites the phosphor, even if there are variations in characteristics of the semiconductor light-emitting device, the wavelength of the light emitting device becomes constant. このため、素子によるホワイトバランスのばらつき、電流・温度によるホワイトバランスのばらつき、または素子の劣化によるホワイトバランスの変化が起らない。 Therefore, variations in the white balance, the change in the white balance due to the deterioration of the white dispersion of balance or element, according to current and temperature does not occur due to device.

【0030】ここで、図1に例示した発光装置においては、発光素子11から放出される紫外線の外部への漏洩を防止するために、封止樹脂13を紫外線に対して高い吸収率を有する材料により構成することが望ましい。 [0030] Here, the material in the illustrated light emitting device in FIG. 1, which has to prevent leakage to the outside of the ultraviolet emitted from the light emitting element 11, a high absorption sealing resin 13 to ultraviolet it is desirable to construct by.

【0031】本実施形態においては、白色発光装置として、紫外発光半導体発光素子と、紫外光により励起される青色発光蛍光体と、青色光により励起される黄色発光蛍光体とを用いたものを具体例として挙げたが、本発明はこれに限定されるものではない。 In the present embodiment, as a white light emitting device, specifically the ultraviolet light-emitting semiconductor light emitting element, a blue light-emitting phosphor excited by ultraviolet light, that using a yellow light emitting phosphor excited by the blue light as examples, but the present invention is not limited thereto. すなわち、本発明は、発光素子と、その発光素子からの光により励起されて発光する第1の蛍光体と、第1の蛍光体からの光により励起されて発光する第2の蛍光体と、を有するすべての発光装置に適用して同様の効果が得られる。 That is, the present invention has a light emitting element, a first phosphor which emits light when excited by light from the light emitting element, a second phosphor that emits light when excited by light from the first fluorescent material, similar effects when applied to all the light-emitting device having obtained.

【0032】例えば、発光素子として紫色の波長帯の光を放出する発光半導体発光素子、第1の蛍光体として紫色光により励起される青緑色発光蛍光体、第2の蛍光体として青緑色光により励起される赤色発光蛍光体、をそれぞれ用いた発光装置においても、極めて均一且つ安定した白色光を得ることができる。 [0032] For example, the light-emitting semiconductor light emitting device that emits light in a wavelength band of violet as a light emitting element, a blue-green-emitting phosphor excited by violet light as the first phosphor, the blue-green light as the second phosphor red light-emitting phosphors excited, also in the light emitting device using respectively, it is possible to obtain a very uniform and stable white light. また、本発明において用いる発光素子は必ずしも半導体発光素子である必要はない。 The light emitting element used in the present invention is not necessarily a semiconductor light-emitting device. すなわち、LEDや半導体レーザなどの半導体発光素子の他にも、EL(electro-luminescent)素子やその他の種々の発光素子を用いても良い。 That is, in addition to the semiconductor light emitting element such as an LED or a semiconductor laser, EL (electro-luminescent) may be used elements and other various light-emitting element.

【0033】さらに、白色以外の光を放出する発光装置についても同様に適用して同様の硬化を得ることができる。 Furthermore, it is possible to obtain a cured similar to similarly applied to the light emitting device that emits light other than white. すなわち、発光素子からの光により励起されて発光する第1の蛍光体と、第1の蛍光体からの光により励起されて発光する第2の蛍光体を用いて色度座標の変化のない発光装置を実現できる。 That is, the first phosphor which emits light when excited by light from the light emitting element, a first free emission of a change in chromaticity coordinates by using the second phosphor which emits light when excited by light from the phosphor the apparatus can be realized.

【0034】次に、本発明の第2の実施の形態について説明する。 Next, a description will be given of a second embodiment of the present invention. 図3は、本発明の第2の実施の形態にかかる発光装置を表す概略断面図である。 Figure 3 is a schematic sectional view showing a light emitting device according to a second embodiment of the present invention. すなわち、同図の発光装置は、一般にSMD(Surface Mounted Device:面実装用デバイス)ランプと呼ばれるものである。 That is, the light-emitting device of the figure, generally SMD: is called a (Surface Mounted Device devices for surface mounting) lamps. すなわち、実装基板25の表面には、配線パターン26が形成され、その上に半導体発光素子11がマウントされている。 That is, the surface of the mounting substrate 25, the wiring pattern 26 is formed, the semiconductor light emitting element 11 is mounted thereon. 発光素子11は、ワイア24により適宜配線パターン26に接続されている。 Emitting element 11 is connected to the appropriate wiring pattern 26 by wire 24. 半導体発光素子11は、紫外線領域の光を放出する発光素子である。 The semiconductor light emitting element 11 is a light-emitting element that emits light in the ultraviolet region.

【0035】本実施形態において用いる蛍光体も、紫外光により励起される青色発光蛍光体28と、青色光により励起される黄色発光蛍光体27である。 Phosphor used in [0035] this embodiment also, the blue-emitting phosphor 28 which is excited by ultraviolet light, a yellow light emitting phosphor 27 which is excited by blue light. 図中の22は樹脂で、青色光により励起される黄色発光蛍光体27はこの樹脂の上に塗布されており、さらにこの上に紫外光により励起される青色発光蛍光体28が塗布されている。 22 in the figure is a resin, the yellow emitting phosphor 27 is coated on the resin, more blue-emitting phosphor 28 which is excited by ultraviolet light thereon that is excited by the blue light is applied . また、その周囲は、封止樹脂23により封止されている。 Also, the surrounding is sealed with a sealing resin 23. 内側の樹脂22は、紫外光の吸収の少ない材料により形成する。 Inner resin 22 is formed by a material having less absorption of ultraviolet light.

【0036】本実施形態においては、青色発光蛍光体2 [0036] In the present embodiment, the blue-emitting phosphor 2
8よりも黄色発光蛍光体27のほうが発光素子11に近くに設けられている。 Towards the yellow-emitting phosphor 27 is provided near the light emitting element 11 than 8. このような配置の場合においては、発光素子11から放出された紫外光は、黄色発光蛍光体27には吸収されずに透過して青色発光蛍光体28 In the case of such an arrangement, the ultraviolet light emitted from the light emitting element 11 is blue to yellow light-emitting phosphor 27 is transmitted without being absorbed emitting phosphor 28
に到達して吸収され、青色光に変換される。 It is absorbed and reaches the to be converted into blue light. そして、この青色光のうちで、発光装置の内側に向かって放出された成分は、黄色発光蛍光体27に吸収されて黄色光に変換される。 Then, among the blue light components emitted toward the inside of the light emitting device is converted it is absorbed by the yellow-emitting phosphor 27 into yellow light. つまり、本実施形態においても、青色光と黄色光とからなる白色光を外部において取り出すことができる。 That is, in this embodiment, can be taken outside the white light composed of blue light and yellow light. また、そのホワイトバランスは、第1実施形態において前述したものと同様に、蛍光体27と28との比率のみに依存し、発光素子11の発光波長や発光強度の変動に左右されることはない。 Also, the white balance, in the same manner as described above in the first embodiment, and depends only on the ratio of the phosphor 27 and 28, will not be influenced by variation of the emission wavelength and the emission intensity of the light emitting element 11 . その結果として、極めて安定し均一な白色光を得ることができる。 As a result, it is possible to obtain a very stable and uniform white light.

【0037】本実施形態において使用することができる蛍光体27、28の例としては、第1実施形態に関して前述したものと同様のものを挙げることができる。 [0037] Examples of phosphors 27, 28 can be used in the present embodiment may include the same as those described above with reference to the first embodiment. すなわち、紫外光により励起される青色発光蛍光体28としては、前述した東芝製型式801EJがある。 That is, as the blue-emitting phosphor 28 which is excited by ultraviolet light, there is a Toshiba Model 801EJ described above. なお、8 In addition, 8
01EJの比重は4.2である。 The specific gravity of the 01EJ is 4.2. また、青色光により励起される黄色発光蛍光体27としては、YAG(Ce) As the yellow emitting phosphor 27 is excited by the blue light, YAG (Ce)
すなわち(Y 1-a Gd a3 (Al 1-b Ga b512 :Ce That (Y 1-a Gd a) 3 (Al 1-b Ga b) 5 O 12: Ce
がある。 There is. ここで、YAG(Ce)は、その吸収率のピークが青色光の波長領域にある。 Here, YAG (Ce), a peak of the absorption rate is in the wavelength region of blue light. つまり、青色光に対する吸収率が極めて高い反面、発光素子11から放出される紫外線領域の光に対する吸収率は極めて低い。 That is, although a very high absorption rate for blue light, the absorption with respect to light in the ultraviolet region emitted from the light emitting element 11 is very low. 従って、 Therefore,
発光素子11から放出される1次光は、黄色蛍光体27 The primary light emitted from the light emitting element 11, the yellow phosphor 27
には実質的に吸収されず、透過して青色蛍光体28に到達する。 It not substantially absorbed in the transmission to reach the blue phosphor 28.

【0038】これらの蛍光体27、28の塗布の方法についても第1実施形態に関して前述したものと同様とすることができる。 [0038] can be the same as those also mentioned above about the first embodiment for the method of application of these phosphors 27 and 28. すなわち: (1)YAG(Ce)をキャスティングする。 Namely: (1) casting a YAG (Ce). すなわち、溶媒に蛍光体を分散させ、樹脂22の表面に塗布して加熱することによりキュアして硬化させる。 That is, the solvent a phosphor is dispersed in, and cured is cured by heating is applied to the surface of the resin 22. このようにして青色蛍光体27の層を形成することができる。 It is possible to form a layer of the blue phosphor 27 in this way. 次に、同様にして、その上に801EJをキャスティングする。 Next, in the same way, casting the 801EJ thereon. この一連の方法は蛍光体の比重の大小関係に無関係に用いることができる。 This series of method can be used regardless of the magnitude relation between the specific gravity of the phosphor. (2)801EJを溶かした溶媒と、YAG(Ce)を溶かした溶媒とを樹脂12の表面に滴下する。 (2) a solvent which dissolved 801EJ, and a solvent was dissolved YAG (Ce) is added dropwise to the surface of the resin 12. この際に、蛍光体粒子の比重や、溶媒の粘性と硬化速度などを考慮して、相分離によりYAG(Ce)が801EJよりも下の層になるように設計する。 At this time, the specific gravity and the phosphor particles, etc. in consideration of the viscosity and cure rate of the solvent, YAG (Ce) by phase separation is designed to be a layer below the 801EJ.

【0039】次に、本発明の第3の実施の形態について説明する。 Next, a description will be given of a third embodiment of the present invention. 図4は、本発明の第3の実施の形態にかかる発光装置を表す概略断面図である。 Figure 4 is a schematic sectional view showing a light emitting device according to a third embodiment of the present invention. 同図の発光装置も「縦型LED」と呼ばれるものである。 The light emitting device of FIG even is called a "vertical type LED." 本実施形態においては、発光素子11の表面に蛍光体が塗布されている点に特徴を有する。 In the present embodiment has a feature in that the phosphor is coated on the surface of the light emitting element 11.

【0040】すなわち、紫外線発光素子11は、リードフレーム36のカップ部に接着剤30によってマウントされている。 [0040] That is, the ultraviolet light emitting element 11 is mounted by adhesive 30 to the cup portion of the lead frame 36. 発光素子11の表面には、紫外光により励起される青色発光蛍光体38が塗布され、さらに、その上には、青色光により励起される黄色発光蛍光体37が塗布されている。 On the surface of the light emitting element 11, a blue-emitting phosphor 38 which is excited by ultraviolet light is applied, further, on the yellow emitting phosphor 37 is excited by the blue light is applied.

【0041】本実施形態においても、発光素子11から放出される紫外光により青色発光蛍光体28が励起されて青色光が放出され、この青色光の一部が黄色発光蛍光体27に吸収されて黄色光に変換される。 [0041] Also in this embodiment, the ultraviolet light emitted from the light emitting element 11 is blue-emitting phosphor 28 is released is excited blue light, a portion of the blue light is absorbed by the yellow-emitting phosphor 27 It is converted to a yellow light. そして、青色光と黄色光とからなる白色光を取り出すことができる。 Then, it is possible to take out the white light composed of blue light and yellow light.

【0042】本実施形態においては、蛍光体37、38 [0042] In this embodiment, the phosphor 37, 38
を発光素子11の表面に直接塗布することによって発光素子11のごく近傍において波長を変換し、高い発光輝度の白色光を得ることができる。 Converting a wavelength in the immediate vicinity of the light emitting element 11 by applying directly to the surface of the light emitting element 11, it is possible to obtain white light of high luminance. さらに、この白色光の放出源を点光源に近づけることができるために、光学的手段により、所定の放射形状の光を容易に得ることができる。 Furthermore, in order to be able to bring the emission source of the white light to a point light source, it is possible by optical means, to easily obtain light having a predetermined radial shape. 例えば、樹脂33をレンズ状に形成することにより、平行光線を容易に形成することができる。 For example, by forming the resin 33 in the lens shape, it is possible to easily form a parallel beam.

【0043】また、本実施形態においては、発光素子1 [0043] Further, in the present embodiment, the light emitting element 1
1と蛍光体37、38との間に樹脂が存在しないので、 Since the resin does not exist between the 1 and the phosphor 37,
そのような樹脂による紫外光の吸収ロスを解消することもできる。 It is also possible to eliminate the absorption loss of the ultraviolet light by such resins. なお、蛍光体は、一般に絶縁性を有するものが多いので、本実施形態のように発光素子11の表面に直接塗布しても電気的に短絡するような心配はない。 Incidentally, the phosphor, because generally many of them has an insulating property, there is no fear that a short circuit electrically be applied directly to the surface of the light emitting element 11 as in this embodiment. なお、本実施形態において用いる青色蛍光体38や黄色蛍光体37の材料やその塗布方法は、前述した各実施形態と同様とすることができるので、詳細な説明は省略する。 A method of the material and its coating blue phosphor 38 and the yellow phosphor 37 used in this embodiment, can be the same as the embodiments described above, a detailed description thereof will be omitted.

【0044】また、蛍光体の塗布順序を図4に例示したものとは逆にして、まず、発光素子11の表面に黄色蛍光体を塗布し、さらにその上に青色蛍光体を塗布しても良い。 [0044] Also, from those exemplified coating order of the phosphor 4 in the reverse, first, the yellow phosphor is applied to the surface of the light emitting element 11, it is further coated with a blue phosphor thereon good.

【0045】次に、本発明の第4の実施の形態について説明する。 Next, a description will be given of a fourth embodiment of the present invention. 図5は、本発明の第4の実施の形態にかかる発光装置を表す概略断面図である。 Figure 5 is a schematic sectional view showing a light emitting device according to a fourth embodiment of the present invention. 同図の発光装置は、 The light emitting device of the figure,
一般に「7セグメントディスプレイ」と称されるものである。 In general it is what is referred to as "7-segment display." 同図において、11は紫外発光半導体発光素子であり、基板45の上にマウントされている。 In the figure, 11 is a ultraviolet light-emitting semiconductor light-emitting element, is mounted on the substrate 45. 紫外光により励起される青色発光蛍光体48と青色光により励起される黄色発光蛍光体47は混合されてこの素子11の上に塗布されている。 Yellow-emitting phosphor 47 which is excited by the blue-emitting phosphor 48 and the blue light is excited by ultraviolet light is applied are mixed on the element 11. 49は、遮蔽部材であり、43は封止樹脂である。 49 is a shielding member, 43 is a sealing resin. 本実施形態においては、樹脂43の紫外光の吸収を考慮しなくても良いという利点がある。 In the present embodiment, there is an advantage that the absorption of ultraviolet light of the resin 43 may not be considered. なお、図5においては、配線のための電極パターンやワイアなどは便宜上省略した。 In FIG. 5, an electrode pattern and wire for wiring are omitted for convenience.

【0046】本実施形態のように青色発光蛍光体47と黄色発光蛍光体48とを混ぜて用いても、前述した各実施形態と同様の効果を得ることができる。 [0046] be used by mixing a blue phosphor 47 and the yellow emitting phosphor 48 as in this embodiment, it is possible to obtain the same effect as the embodiment described above. 従来の発光装置のように3色の蛍光体を使用した場合には、蛍光体の比重の違いで溶媒が硬化する際に分離が起こり、発色の不均一などが生じてしまう。 When using the three-color phosphor as in the conventional light emitting device, separation occurs when the solvent is cured at the difference in specific gravity of the phosphor, such as unevenness of color occurs. これに対して、本実施形態のように2色の蛍光体のみを混ぜる場合は、溶媒が硬化する際の分離が起りずらく、発色の不均一は生じにくい。 In contrast, if the mixing phosphor only two colors as in the present embodiment, pleasure not occur separation when a solvent is cured, uneven coloring hardly occurs. 特に、蛍光体47と蛍光体48との比重が同じ場合、例えば青色発光蛍光体48として801EJを用い、黄色発光蛍光体47としてYAG(Ce)を用いた場合などは、分離が抑制され、極めて均一な発色が容易に得られる点で効果的である。 In particular, if the specific gravity of the phosphor 47 and the phosphor 48 are the same, for example, using a 801EJ as a blue-emitting phosphor 48, such as when using a YAG (Ce) as a yellow light emitting phosphor 47 are separated is suppressed, extremely is effective in that uniform color can be easily obtained.

【0047】以上、具体例を参照しつつ本発明の実施の形態について説明した。 The above is a description of embodiments of the present invention with reference to examples. しかし、本発明のこれらの具体例に限定されるものではない。 However, the invention is not limited to these specific examples of the present invention. すなわち、本発明は、発光素子と、その発光素子から放出される光を波長変換する第1の蛍光体と、その発光素子からの光は実質的に吸収せず、第1の蛍光体からの放出される2次光を波長変換する第2の蛍光体と、を備えた発光装置であれば、同様の作用効果を奏するものであり、それぞれの要素の具体的な構成は、当業者が適宜選択して実施することができる。 That is, the present invention has a light emitting element, a first phosphor that wavelength conversion of light emitted from the light emitting element, light from the light emitting element is not substantially absorbed, from the first phosphor if the light emitting device including a second phosphor that converts the wavelength of the emitted secondary light, the, which the same effects, the specific configuration of each element, omissions it can be carried out selectively.

【0048】さらに、前述した各具体例においては、2 [0048] Further, in the above examples, 2
種類の蛍光体を備えた場合について説明したが、これ以外にも、3種類以上の蛍光体を用いても良い。 Has been described with the type of the phosphor, In addition to this, it may be used three or more types of phosphors. 例えば、 For example,
発光素子からの1次光を2次光に変換する第1の蛍光体と、その2次光を波長変換してそれぞれ波長が異なる2 The first phosphor and the body, the wavelength each wavelength converts the secondary light to convert the primary light from the light emitting element to the secondary light are different 2
次光を放出する第2の蛍光体及び第3の蛍光体と、を具備したものとしても良い。 A second phosphor and a third phosphor that emits order light may be those provided with the.

【0049】 [0049]

【発明の効果】本発明は、以上説明した形態で実施され、以下に説明する効果を奏する。 According to the present invention, it is implemented in the form described above, the effect described below.

【0050】すなわち、本発明によれば、第1の波長の1次光を放出する発光素子と、その1次光を吸収して第2の波長の2次光を放出する第1の蛍光体と、その第2 [0050] That is, according to the present invention, the first phosphor which emits a light emitting element that emits primary light of a first wavelength, a second light of the second wavelength by absorbing the primary light and, the second
の波長の2次光を吸収して第3の波長の2次光を放出する第2の蛍光体と、を備え、第2の蛍光体は、第1の波長に対する吸収率が低く、実質的に波長変換をしないものとして構成することにより、得られる光スペクトルのバランスを極めて安定させ、発光素子から放出される1 Comprising of a second phosphor that emits secondary light in the third wavelength absorbs secondary light of a wavelength, and the second phosphor, absorption rate for the first wavelength is low, substantially the by configuring as not wavelength conversion, is extremely stable balance of the resulting optical spectrum, 1 emitted from the light emitting element
次光の波長や強度が変化しても、得られる光スペクトルが変化することが解消される。 Be the wavelength and intensity of the next light is changed, is eliminated can be obtained light spectrum changes.

【0051】例えば、紫外発光を有する半導体発光素子と、紫外光により励起される青色発光蛍光体と、青色光により励起される黄色発光蛍光体とを用いて白色の発光を得る場合を例に挙げると、以下のようなメリットがある。 [0051] For example, given a semiconductor light emitting element having ultraviolet light emission, and blue light-emitting phosphor excited by ultraviolet light, the case of obtaining white light emission using a yellow light emitting phosphor excited by the blue light as an example and, there is a merit such as the following. (1)搭載する発光素子のばらつきすなわち個体差によるホワイトバランスのばらつきが解消される。 (1) variations in the white balance due to variations i.e. individual difference of the light emitting element to be mounted is eliminated. (2)電流の変化によるホワイトバランスの変化が解消される。 (2) change in the white balance due to changes in current is eliminated. (3)温度の変化によるホワイトバランスの変化が解消される。 (3) change in the white balance due to changes in temperature is eliminated. (4)搭載した発光素子の劣化によるホワイトバランスの変化が解消される。 (4) a change in white balance is eliminated due to the deterioration of the mounted light emitting element.

【0052】また、蛍光を用いて白色の発光を行う方法として、2色のみを蛍光体を用いることにより、 (5)蛍光体の配合比の調整が容易にできる というメリットも得られる。 [0052] As a method of performing a white light emission using a fluorescence, by only two colors using the phosphor, also obtained an advantage that can be easily adjusted (5) phosphor blend ratio.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】本発明の実施の形態にかかる発光装置の概念構成を表す断面図である。 1 is a sectional view showing a conceptual configuration of a light-emitting device according to an embodiment of the present invention.

【図2】本発明の発光装置に用いる半導体発光素子の概念構成を表す概略断面図である。 2 is a schematic sectional view showing a conceptual configuration of a semiconductor light emitting device using the light-emitting device of the present invention.

【図3】本発明の第2の実施の形態にかかる発光装置を表す概略断面図である。 3 is a schematic sectional view showing a light emitting device according to a second embodiment of the present invention.

【図4】本発明の第3の実施の形態にかかる発光装置を表す概略断面図である。 4 is a schematic sectional view showing a light emitting device according to a third embodiment of the present invention.

【図5】本発明の第4の実施の形態にかかる発光装置を表す概略断面図である。 5 is a schematic sectional view showing a light emitting device according to a fourth embodiment of the present invention.

【図6】従来の白色発光型の発光装置の概念構成を表す概略断面図である。 6 is a schematic sectional view showing a conceptual configuration of a conventional white light emitting type light emitting device.

【符号の説明】 DESCRIPTION OF SYMBOLS

11 発光素子 12、22 樹脂 13、23、33、43 封止樹脂 14、24、34 ワイア 15、36 リードフレーム 16、36 リードフレーム 17、27、37、47 青色発光で励起される黄色発光蛍光体 18、28、38、48 青色蛍光体 25 基板 26 配線パターン 30 接着剤 22 樹脂 23 樹脂モールド 24 リードフレーム 25 メタルポスト 26 メタルステム 27 青色発光で励起される黄色発光蛍光体 28 紫外発光で励起される青色発光蛍光体 45 基板 49 遮光部材 111 発光素子 112 樹脂 113 封止樹脂 114 ワイア 115、116 リードフレーム 117 黄色蛍光体 131 サファイア基板 132 GaNバッファ層 133 n型GaN層 134 n型AlGaN層 135 活性層 136 p型AlGa 11 light-emitting element 12, 22 resin 13, 23, 33, 43 sealing resin 14, 24, 34 yellow light emitting phosphor excited by wire 15 and 36 lead frame 16, 36 a lead frame 17, 27, 37, 47 blue emitting 18,28,38,48 excited by a blue phosphor 25 substrate 26 wiring pattern 30 adhesive 22 resin 23 molded resin 24 lead frame 25 metal posts 26 yellow light emitting phosphor 28 ultraviolet emission excited by the metal stem 27 blue emission blue phosphor 45 substrate 49 light shielding member 111 emitting element 112 resin 113 sealing resin 114 wire 115, 116 lead frame 117 yellow phosphor 131 sapphire substrate 132 GaN buffer layer 133 n-type GaN layer 134 n-type AlGaN layer 135 active layer 136 p-type AlGa 層 137 p型GaN層 141 n側電極 142 ボンディングパッド 143 p側電極 144 ボンディングパッド 145 SiO 2保護膜 146 SiO 2保護膜 Layer 137 p-type GaN layer 141 n-side electrode 142 bonding pad 143 p-side electrode 144 bonding pad 145 SiO 2 protective film 146 SiO 2 protective film

───────────────────────────────────────────────────── フロントページの続き (72)発明者 菅 原 秀 人 神奈川県川崎市幸区堀川町72番地 株式会 社東芝川崎事業所内 (72)発明者 古 川 千 里 神奈川県川崎市川崎区日進町7番地1 東 芝電子エンジニアリング株式会社内 Fターム(参考) 5F041 AA11 AA12 CA40 EE25 ────────────────────────────────────────────────── ─── of the front page continued (72) inventor, but Shigeru Hara people, Kawasaki City, Kanagawa Prefecture, Saiwai-ku Horikawa-cho, 72 address stock company Toshiba Kawasaki workplace (72) inventor Furukawa thousand-ri, Kawasaki City, Kanagawa Prefecture Kawasaki-ku Nisshin-cho 7 address 1 Toshiba Electronics engineering Co., Ltd. in the F-term (reference) 5F041 AA11 AA12 CA40 EE25

Claims (5)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】第1の波長の光を放出する発光素子と、 前記第1の波長の光を吸収して第2の波長の光を放出する第1の波長変換手段と、 前記第2の波長の光を吸収して第3の波長の光を放出する第2の波長変換手段と、 を備えたことを特徴とする発光装置。 And 1. A light emitting device which emits light of a first wavelength, and a first wavelength converting means for releasing the second wavelength light by absorbing light of the first wavelength, the second emitting device comprising a second wavelength converting means for emitting light of a third wavelength by absorbing light of a wavelength, further comprising a.
  2. 【請求項2】前記第2の波長は、前記第1の波長よりも長く、 前記第3の波長は、前記第2の波長よりも長く、 前記第2の波長変換手段は、前記第1の波長の光を実質的に吸収しないことを特徴とする請求項1記載の発光装置。 Wherein said second wavelength, said first longer than the wavelength, the third wavelength, said second longer than the wavelength, the second wavelength conversion means, said first the light emitting device according to claim 1 characterized in that it does not substantially absorb light of wavelengths.
  3. 【請求項3】前記第1の波長変換手段は、蛍光体であり、 前記第2の波長変換手段は、蛍光体であることを特徴とする請求項1または2に記載の発光装置。 Wherein the first wavelength converting means is a phosphor, the second wavelength conversion means, the light emitting device according to claim 1 or 2, characterized in that a phosphor.
  4. 【請求項4】前記第1の波長の光は、紫外光であり、 前記第2の波長の光は、青色光であり、 前記第3の波長の光は、黄色光であることを特徴とする請求項1〜3のいずれか1つに記載の発光装置。 Wherein light of said first wavelength is ultraviolet light, the light of the second wavelength is blue light, the light of the third wavelength, and characterized by a yellow light the light emitting device according to any one of claims 1 to 3.
  5. 【請求項5】前記発光素子は、窒化物半導体からなる半導体発光素子であることを特徴とする請求項1〜4のいずれか1つに記載の発光装置。 Wherein said light emitting element, the light emitting device according to any one of claims 1 to 4, characterized in that a semiconductor light emitting device made of nitride semiconductor.
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