JP2002222996A - Led device - Google Patents

Led device

Info

Publication number
JP2002222996A
JP2002222996A JP2001015487A JP2001015487A JP2002222996A JP 2002222996 A JP2002222996 A JP 2002222996A JP 2001015487 A JP2001015487 A JP 2001015487A JP 2001015487 A JP2001015487 A JP 2001015487A JP 2002222996 A JP2002222996 A JP 2002222996A
Authority
JP
Japan
Prior art keywords
led
fluorescent material
light
light emitting
emitting layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001015487A
Other languages
Japanese (ja)
Other versions
JP4831870B2 (en
Inventor
Tadahiro Okazaki
忠宏 岡崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP2001015487A priority Critical patent/JP4831870B2/en
Publication of JP2002222996A publication Critical patent/JP2002222996A/en
Application granted granted Critical
Publication of JP4831870B2 publication Critical patent/JP4831870B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909Post-treatment of the connector or wire bonding area
    • H01L2224/8592Applying permanent coating, e.g. protective coating

Landscapes

  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

PROBLEM TO BE SOLVED: To obtain white light not containing a yellow contour by a method wherein an LED which emits blue light is coated with a fluorescent material. SOLUTION: An LED 12 is arranged in the recess 18a of one lead frame 18 of the LED device (LED lamp) 10, and the other lead frame 16 and the LED 12 are connected by a bonding wire 20. The circumference of a part which is lower than a light emitting layer in the recess 19a of the LED 12 is sealed by using a transparent resin or a diffusion resin 22, and only a face which is higher than the light emitting layer is coated with the fluorescent material. Consequently, a distance at which light from the LED 12 passes a phosphor layer 14 is made nearly identical irrespective of a route, and the generation of the yellow contour is suppressed.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明が属する技術分野】本発明は、均一な白色光を得
るためのLED装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an LED device for obtaining uniform white light.

【0002】[0002]

【従来の技術】青色光を発光するLED(発光素子)と
して、例えばインジウム・ガリウム窒化物を用いたもの
が知られているが、この青色発光するLEDに蛍光材を
塗布して白色光を得ることが一般に行われている。図2
はその一例を示すLEDランプ1を示し、LED12は
リードフレーム18の凹部(パラボラ)18a内に配置
され、その上部及びその周囲は例えば、YAG/Gd:
Ce蛍光材の粒子を含む透明なエポキシ樹脂からなる蛍
光体層14で覆われ、かつボンディングワイヤ20によ
ってリードフレーム16に接続されている。また、簡略
化のため図示してはないが、全体は例えばエポキシ樹脂
により封止されている。LED12は、それぞれのリー
ドフレームから電力の供給を受けて青色発光し、その光
と前記蛍光材からの黄色の蛍光を混合して白色光を得て
いる。
2. Description of the Related Art As an LED (light-emitting element) that emits blue light, for example, one using indium gallium nitride is known. White light is obtained by applying a fluorescent material to this blue-emitting LED. This is commonly done. FIG.
Shows an LED lamp 1 showing an example thereof, in which an LED 12 is arranged in a concave portion (parabola) 18a of a lead frame 18, and its upper portion and its periphery are, for example, YAG / Gd:
It is covered with a phosphor layer 14 made of a transparent epoxy resin containing Ce phosphor particles, and is connected to a lead frame 16 by a bonding wire 20. Although not shown for simplicity, the whole is sealed with, for example, epoxy resin. The LED 12 receives power supply from each lead frame and emits blue light, and obtains white light by mixing the light and yellow fluorescent light from the fluorescent material.

【0003】[0003]

【発明が解決しようとする課題】しかしながら、LED
12から発光された光は、蛍光材層14を通して直接外
部に出るもの、前記凹部18aの反射面18bで反射さ
れてから外部に出るもの等で経路が異なるため、LED
12から発光された光が通過する蛍光材層の距離(厚
み)は一様でなく、また、蛍光材はLEDの上部及び周
囲全体に塗布されるからその塗布量が多く、しかも塗布
される蛍光材層の厚みも必ずしも一様ではないから、こ
れらの要因によりLEDで発光された青色光は蛍光材層
の影響を強く受け、混色された白色光中に黄色の輪郭が
発生することがある。そのための解決策として、例え
ば、図3に示すようにLEDの上部及びそのまわりに透
明なスペーサSを堆積させ、その上に蛍光材料をほぼ均
一な厚さに塗布してLED12と蛍光材層14を分離
し、それによって前記黄色等の輪郭の発生を抑制するよ
うにした半導体装置が知られている(例えば特開2000-7
7723号公報参照)。しかしながら、この半導体装置はL
ED12の上部及びその回りに透明なスペーサSを堆積
させた構造であるため、LED12から出た光は蛍光材
層14に入るまでに透明スペーサSで屈折される、つま
り、前記スペーサSを設けない場合に比して屈折が1回
余分に行われるから光の取り出し効率が悪くなるという
問題がある。そこで、本発明はこれらの問題を解決でき
るLED装置を提供することを目的とするものである。
SUMMARY OF THE INVENTION However, LEDs
The light emitted from the LED light source 12 is emitted directly through the fluorescent material layer 14, or is emitted from the reflection surface 18 b of the concave portion 18 a before being emitted to the outside.
The distance (thickness) of the fluorescent material layer through which the light emitted from the LED 12 passes is not uniform, and the fluorescent material is applied to the upper part and the entire periphery of the LED, so that the applied amount is large, and the applied fluorescent light is large. Because the thickness of the material layer is not always uniform, the blue light emitted from the LED is strongly affected by the fluorescent material layer due to these factors, and a yellow contour may be generated in the mixed white light. As a solution therefor, for example, as shown in FIG. 3, a transparent spacer S is deposited on and around the LED, and a fluorescent material is applied thereon to a substantially uniform thickness to form the LED 12 and the fluorescent material layer 14. There has been known a semiconductor device which separates an image and thereby suppresses the occurrence of the contour such as the yellow color (for example, Japanese Patent Application Laid-Open No. 2000-72000).
No. 7723). However, this semiconductor device has L
Since the transparent spacer S is deposited on and around the ED 12, the light emitted from the LED 12 is refracted by the transparent spacer S before entering the phosphor layer 14, that is, the spacer S is not provided. As compared with the case, the refraction is performed once more, so that there is a problem that light extraction efficiency is deteriorated. Therefore, an object of the present invention is to provide an LED device that can solve these problems.

【0004】[0004]

【課題を解決するための手段】請求項1の発明は、基板
電極にボンディングされたLEDの発光層より下部の周
囲を透明樹脂または拡散樹脂を用いて封止し、該LED
の発光層よりも上部にのみに蛍光材を塗布して蛍光材層
を形成したことを特徴とするLED装置である。
According to a first aspect of the present invention, a lower portion of a light emitting layer of an LED bonded to a substrate electrode is sealed with a transparent resin or a diffusion resin to seal the LED.
And a fluorescent material layer is formed by applying a fluorescent material only on the light emitting layer.

【0005】請求項2の発明は、一方のリードフレーム
の凹部中にLEDを配置し、他方のリードフレームと前
記LEDをボンディングワイヤで接続し、LEDの前記
凹部中で発光層よりも下部の周囲には透明樹脂または拡
散樹脂を用いて封止し、発光層よりも上部のみに蛍光材
を塗布して蛍光材層を形成したことを特徴とするLED
ランプである。
According to a second aspect of the present invention, an LED is disposed in a concave portion of one lead frame, and the other lead frame is connected to the LED by a bonding wire. The LED is characterized in that it is sealed with a transparent resin or a diffusion resin, and a fluorescent material layer is formed by applying a fluorescent material only above the light emitting layer.
It is a lamp.

【0006】[0006]

【発明の実施の形態】本発明の1実施形態を図面を参考
にして説明する。なお、図中、従来装置と同一の箇所に
は同一の番号を付してある。図1は本発明に係るLED
ランプ10の断面図であって、LED12は第1のリー
ドフレーム18の凹部(パラボラ)18a内に配置さ
れ、その上面電極は第2のリードフレーム16とボンデ
ィングワイヤ20で接続されている。LED12はその
発光層を境に下の部分では周囲が透明樹脂または拡散樹
脂22で封止されており、かつ発光層よりも上面には蛍
光材14が塗布されている。LED12は、従来同様に
それぞれのリードフレームから電力の供給を受けて青色
発光し、その光と前記蛍光材で励起された黄色の蛍光と
が混合されて白色光となる。ここで、LEDランプ10
の発光層より上側に向かう青色光は直接蛍光材層14を
通して外部に導出され、かつ、その発光層の下側に向か
う光は透明樹脂または拡散樹脂22中を通る。従って、
発光層の下側に向かった光が前記凹部18の反射面18
bで反射されても蛍光材の影響は一切受けないから、そ
の反射光が装置から外部に出ていくときに通過する蛍光
材層14の厚みはLED12から直接外部に向かった光
の場合と変わらない。従って、本発明によれば、LED
12からの出射光がどの経路を経て装置外に出るにして
も蛍光材層14を通過する距離には大差がなく、従来の
ようにLED12からの光が通過する蛍光材層14の厚
みの差により、白色光のなかに黄色の輪郭が発生する恐
れはない。また、従来装置においては蛍光材を凹部(パ
ラボラ)18内全体に充填する必要があるが、本発明に
係るLED装置ではその必要が無いため、蛍光材の量を
削減することができる。
DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described with reference to the drawings. In the figure, the same parts as those of the conventional device are denoted by the same reference numerals. FIG. 1 shows an LED according to the present invention.
FIG. 3 is a cross-sectional view of the lamp 10, in which an LED 12 is disposed in a concave portion (parabola) 18 a of a first lead frame 18, and an upper surface electrode thereof is connected to a second lead frame 16 by a bonding wire 20. The periphery of the LED 12 at the portion below the light emitting layer is sealed with a transparent resin or a diffusion resin 22, and the fluorescent material 14 is applied on the upper surface of the LED 12 above the light emitting layer. The LED 12 emits blue light by receiving power supply from each lead frame as in the related art, and the light is mixed with the yellow fluorescent light excited by the fluorescent material to become white light. Here, the LED lamp 10
The blue light going upward from the light emitting layer is directly led out through the fluorescent material layer 14, and the light going below the light emitting layer passes through the transparent resin or the diffusion resin 22. Therefore,
Light directed to the lower side of the light emitting layer is reflected by the reflection surface 18 of the concave portion 18.
Since the fluorescent material is not affected at all by the light reflected by b, the thickness of the fluorescent material layer 14 which passes when the reflected light goes out of the device is different from the case of the light directly going out of the LED 12 to the outside. Absent. Therefore, according to the present invention, the LED
No matter which path the light emitted from the LED 12 exits the device, there is no great difference in the distance that the light from the LED 12 passes through the fluorescent material layer 14 as in the related art. Therefore, there is no possibility that a yellow outline is generated in the white light. Further, in the conventional device, it is necessary to fill the entirety of the concave portion (parabola) 18 with the fluorescent material, but in the LED device according to the present invention, this is not necessary, so that the amount of the fluorescent material can be reduced.

【0007】[0007]

【発明の効果】本発明は、フレーム凹部内に配置された
LEDの発光層より下側には透明又は拡散樹脂を封止
し、LEDの発光層より上部のみに蛍光材を塗布するよ
うにしたことにより、蛍光材の塗布量を少なくすること
ができると共に、従来のように白色光中に黄色の輪郭が
発生することがない。
According to the present invention, a transparent or diffusion resin is sealed below the light emitting layer of the LED disposed in the frame recess, and the fluorescent material is applied only above the light emitting layer of the LED. Accordingly, the amount of the fluorescent material applied can be reduced, and a yellow contour does not occur in white light as in the related art.

【図面の簡単な説明】[Brief description of the drawings]

【図1】 本発明のLED装置(LEDランプ)の断面
図である。
FIG. 1 is a sectional view of an LED device (LED lamp) of the present invention.

【図2】 従来のLED装置(LEDランプ)の断面図
である。
FIG. 2 is a cross-sectional view of a conventional LED device (LED lamp).

【図3】 従来の他のLED装置(LEDランプ)の要
部断面図である。
FIG. 3 is a sectional view of a main part of another conventional LED device (LED lamp).

【符号の説明】[Explanation of symbols]

10・・・半導体装置(LEDランプ)、12・・・L
ED、14・・・蛍光材、16,18・・・第1,第2
リードフレーム、18a・・・リードフレームの凹部
(パラボラ)、20・・・ボンディングワイヤ、22・
・・透明樹脂または拡散樹脂、
10 ... Semiconductor device (LED lamp), 12 ... L
ED, 14 ... fluorescent material, 16, 18 ... first and second
Lead frame, 18a: concave portion (parabola) of lead frame, 20: bonding wire, 22 ·
..Transparent resin or diffusion resin,

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 基板電極にボンディングされたLEDの
発光層より下部の周囲を透明樹脂または拡散樹脂を用い
て封止し、該LEDの発光層よりも上部にのみに蛍光材
を塗布して蛍光材層を形成したことを特徴とするLED
装置。
1. A method in which the periphery of a lower portion of a light emitting layer of an LED bonded to a substrate electrode is sealed with a transparent resin or a diffusion resin, and a fluorescent material is applied only to a portion above the light emitting layer of the LED to obtain a fluorescent light. LED characterized by forming a material layer
apparatus.
【請求項2】 一方のリードフレームの凹部中にLED
を配置し、他方のリードフレームと前記LEDをボンデ
ィングワイヤで接続し、LEDの前記凹部中で発光層よ
りも下部の周囲には透明樹脂または拡散樹脂を用いて封
止し、発光層よりも上部のみに蛍光材を塗布して蛍光材
層を形成したことを特徴とするLEDランプ。
2. An LED is provided in a recess of one lead frame.
Is arranged, the other lead frame and the LED are connected by a bonding wire, and the lower portion of the LED is sealed with a transparent resin or a diffusion resin around the lower part of the light emitting layer, and the upper part of the LED is sealed with the diffusion resin. An LED lamp characterized in that a fluorescent material layer is formed by applying a fluorescent material only to the fluorescent material layer.
JP2001015487A 2001-01-24 2001-01-24 LED device Expired - Fee Related JP4831870B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001015487A JP4831870B2 (en) 2001-01-24 2001-01-24 LED device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001015487A JP4831870B2 (en) 2001-01-24 2001-01-24 LED device

Publications (2)

Publication Number Publication Date
JP2002222996A true JP2002222996A (en) 2002-08-09
JP4831870B2 JP4831870B2 (en) 2011-12-07

Family

ID=18882029

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001015487A Expired - Fee Related JP4831870B2 (en) 2001-01-24 2001-01-24 LED device

Country Status (1)

Country Link
JP (1) JP4831870B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040044701A (en) * 2002-11-21 2004-05-31 삼성전기주식회사 A light emitting device package and a method of manufacturing the same
KR20040050125A (en) * 2002-12-09 2004-06-16 엘지이노텍 주식회사 Light Emitting Diode Lamp and method for fabricating thereof
WO2005091386A1 (en) * 2004-03-24 2005-09-29 Toshiba Lighting & Technology Corporation Lighting system
JP2012109478A (en) * 2010-11-19 2012-06-07 Toshiba Lighting & Technology Corp Light-emitting body and luminaire

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10190066A (en) * 1996-12-27 1998-07-21 Nichia Chem Ind Ltd Light emitting diode and led display using the same
JP2000031531A (en) * 1998-07-14 2000-01-28 Toshiba Electronic Engineering Corp Light emitter
JP2000077723A (en) * 1998-09-01 2000-03-14 Hewlett Packard Co <Hp> Semiconductor device provided with light-emitting semiconductor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10190066A (en) * 1996-12-27 1998-07-21 Nichia Chem Ind Ltd Light emitting diode and led display using the same
JP2000031531A (en) * 1998-07-14 2000-01-28 Toshiba Electronic Engineering Corp Light emitter
JP2000077723A (en) * 1998-09-01 2000-03-14 Hewlett Packard Co <Hp> Semiconductor device provided with light-emitting semiconductor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040044701A (en) * 2002-11-21 2004-05-31 삼성전기주식회사 A light emitting device package and a method of manufacturing the same
KR20040050125A (en) * 2002-12-09 2004-06-16 엘지이노텍 주식회사 Light Emitting Diode Lamp and method for fabricating thereof
WO2005091386A1 (en) * 2004-03-24 2005-09-29 Toshiba Lighting & Technology Corporation Lighting system
JP2012109478A (en) * 2010-11-19 2012-06-07 Toshiba Lighting & Technology Corp Light-emitting body and luminaire

Also Published As

Publication number Publication date
JP4831870B2 (en) 2011-12-07

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