JP4943005B2 - Thin light emitting diode lamp and manufacturing method thereof - Google Patents

Thin light emitting diode lamp and manufacturing method thereof Download PDF

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JP4943005B2
JP4943005B2 JP2006000210A JP2006000210A JP4943005B2 JP 4943005 B2 JP4943005 B2 JP 4943005B2 JP 2006000210 A JP2006000210 A JP 2006000210A JP 2006000210 A JP2006000210 A JP 2006000210A JP 4943005 B2 JP4943005 B2 JP 4943005B2
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light
emitting diode
blue light
conversion layer
diode chip
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JP2007184326A (en
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智一 岡▲崎▼
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Rohm Co Ltd
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Priority to KR1020087013781A priority patent/KR101019765B1/en
Priority to EP06843429A priority patent/EP1976030A1/en
Priority to CN200680050472.1A priority patent/CN101356656B/en
Priority to US12/160,051 priority patent/US8004002B2/en
Priority to PCT/JP2006/326047 priority patent/WO2007077869A1/en
Priority to TW096100210A priority patent/TW200735423A/en
Publication of JP2007184326A publication Critical patent/JP2007184326A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch

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Abstract

A thin-type light emitting diode lamp comprises a blue light emitting diode chip (6) disposed at the substantially central portion of the inner bottom face of a trench-type recess (3) disposed in the leading end face and having an opening of a slender rectangle shape, a red light changing layer (7) disposed to cover the blue light emitting diode chip (6) and prepared by mixing the powder of such a red fluorescent material into a light transmitting synthetic resin as is excited with the blue light emitted by the blue light emitting diode chip to emit a red light, and a green light changing layer (10) prepared by mixing the powder of such a green fluorescent material into a light transmitting synthetic resin as is excited with the blue light to emit a green light. A light transmitting layer (9) containing either none of the red light fluorescent material and the green light fluorescent material or little is disposed between the red light changing layer (7) and the green light changing layer (10).

Description

本発明は，例えば，液晶表示装置におけるバックライト光源用のランプ等に使用される薄型の発光ダイオードランプと，その製造方法とに関するものである。   The present invention relates to a thin light emitting diode lamp used for, for example, a lamp for a backlight light source in a liquid crystal display device, and a manufacturing method thereof.

従来，この種の薄型発光ダイオードランプは，例えば，先行技術としての特許文献１及び特許文献２に記載されているように，ランプ本体の先端面に，細長い長方形の開口部を有するように溝型にした凹所を設け，この溝型凹所の略中心部における内底面に，発光ダイオードチップをマウントし，この発光ダイオードチップにおいて発光した光を，前記長方形開口部より細長い偏平を形態にして放射するという構成にしている。   Conventionally, this type of thin light-emitting diode lamp is, for example, a groove type so as to have an elongated rectangular opening at the front end surface of the lamp body as described in Patent Document 1 and Patent Document 2 as the prior art. A light emitting diode chip is mounted on the inner bottom surface at the substantially central portion of the groove-shaped recess, and light emitted from the light emitting diode chip is emitted in the form of a flattened shape that is longer than the rectangular opening. It is configured to do.

また，別の先行技術としての特許文献３等は，ＧａＮ系等にて青色を発光する青色発光ダイオードチップは，高い光度を呈することから，この青色発光ダイオードチップを使用して白色発光するように構成した白色発光装置が提案されており，この白色発光装置は，前記青色発光ダイオードチップから発射される青色光を，先ず，光透過性合成樹脂に前記青色光により励起されて赤色光を放射する赤色蛍光体の粉末を混入して成る赤色光変換層を透過し，次いで，光透過性合成樹脂に前記青色光により励起されて緑色光を放射する緑色蛍光体の粉末を混入して成る緑色光変換層を透過することにより，前記青色光，前記赤色光及び前記緑色光の合成光から成る白色光を得るように構成している。   Further, in Patent Document 3 as another prior art, a blue light emitting diode chip that emits blue light in a GaN system or the like exhibits a high luminous intensity, so that the blue light emitting diode chip is used to emit white light. A configured white light emitting device has been proposed. The white light emitting device emits red light emitted from the blue light emitting diode chip, first excited by the blue light to the light-transmitting synthetic resin. Green light that is transmitted through a red light conversion layer formed by mixing red phosphor powder, and then mixed with green phosphor powder that emits green light when excited by the blue light into the light-transmitting synthetic resin. By passing through the conversion layer, white light composed of the combined light of the blue light, the red light, and the green light is obtained.

そして，最近においては，前記薄型発光ダイオードランプを，これに前記別の先行技術における白色発光装置を適用して，白色に発光するように構成している。   Recently, the thin light emitting diode lamp is configured to emit white light by applying the white light emitting device of the other prior art to the thin light emitting diode lamp.

すなわち，前記薄型発光ダイオードランプにおける青色発光ダイオードチップを，前記溝型の凹所内において，前記赤色光変換層にて被覆し，この赤色光変換層の外側に前記緑色光変換層を形成するという構成にすることにより，白色光を，前記凹所における長方形開口部から細長い扁平な形態にして発射することができる。
特開２００１−３６１４７号公報 特開２００５−３１７８２０号公報 特表２００２−５１０８６６号公報 That is, the blue light emitting diode chip in the thin light emitting diode lamp is covered with the red light conversion layer in the groove-shaped recess, and the green light conversion layer is formed outside the red light conversion layer. By doing so, white light can be emitted in the form of an elongated flat shape from the rectangular opening in the recess.
JP 2001-36147 A JP 2005-317820 A Japanese translation of PCT publication No. 2002-510866

しかし，前記溝型凹所内における略中心部にマウントした青色発光ダイオードチップから発射される光の経路は，当該青色発光ダイオードチップから前記溝型凹所における長手方向に離れるにつれて次第に長くなっており，換言すると，前記青色発光ダイオードチップからの光のうち前記溝型凹所における長方形開口部のうち両端の部分又はこれに近い部分より発射される光は，長い光の経路を通過することにより，前記青色発光ダイオードチップを，前記特許文献３に記載されているように，赤色光変換層にて同じ膜厚さで被覆するという構成にした場合には，前記青色発光ダイオードチップから前記長方形開口部のうち両端の部分又はこれに近い部分に向かう青色光の前記赤色光変換層による赤色光への変換が不十分になるから，前記長方形開口部における各箇所から発射される光を白色光の色調に不揃いになるという問題があった。   However, the path of light emitted from the blue light emitting diode chip mounted at substantially the center in the groove-shaped recess gradually becomes longer as the distance from the blue light-emitting diode chip in the longitudinal direction in the groove-shaped recess is increased. In other words, among the light from the blue light emitting diode chip, the light emitted from both ends of the rectangular opening in the groove-shaped recess or a portion close thereto passes through a long light path, thereby As described in Patent Document 3, when the blue light emitting diode chip is covered with the red light conversion layer with the same film thickness, the blue light emitting diode chip has a rectangular opening. Since the red light conversion layer does not sufficiently convert the blue light toward the both end portions or the portions close thereto, the long light The light emitted from each point in the form opening there is a problem that becomes irregular color tone of the white light.

本発明は，この問題を解消した白色発光の薄型発光ダイオードランプと，その製造方法とを提供することを技術的課題とするものである。   It is a technical object of the present invention to provide a white light emitting thin light emitting diode lamp that solves this problem and a manufacturing method thereof.

この技術的課題を達成するため本発明の請求項１は，
「ランプ本体の先端面に，細長い長方形の開口部を有するように溝型にした凹所を設け，この溝型凹所の実質的中心部における内底面に，青色発光ダイオードチップをマウントし，更に，前記凹所に，光透過性合成樹脂に前記青色発光ダイオードチップにおける青色光により励起されて赤色光を放射する赤色蛍光体の粉末を混入して成る赤色光変換層を前記青色発光ダイオードチップを被覆するように設けるとともに，光透過性合成樹脂に前記青色光により励起されて緑色光を放射する緑色蛍光体の粉末を混入して成る緑色光変換層を，前記青色光が当該緑色光変換層を透過するように設けて成る薄型発光ダイオードランプにおいて，
前記青色発光ダイオードチップを被覆する赤色光変換層は，前記青色発光ダイオードチップをマウントする前に設ける構成であり，前記青色発光ダイオードチップにおける側面のうち前記溝型凹所を横切るように延びる左右両側面における前記赤色光変換層の膜厚さを，前記青色発光ダイオードチップにおける側面のうち前記溝型凹所の長手方向に延びる左右両側面における前記赤色光変換層の膜厚さよりも厚くする。」
ことを特徴としている。 In order to achieve this technical problem, claim 1 of the present invention provides:
“On the front end of the lamp body, a groove-shaped recess is provided so as to have an elongated rectangular opening, and a blue light-emitting diode chip is mounted on the inner bottom surface at the substantial center of the groove-shaped recess. The blue light emitting diode chip is provided with a red light conversion layer formed by mixing a powder of a red phosphor that emits red light excited by blue light in the blue light emitting diode chip into a light transmitting synthetic resin in the recess. A green light conversion layer formed by mixing a green phosphor powder that emits green light by being excited by the blue light into the light-transmitting synthetic resin, and the blue light is the green light conversion layer In a thin light-emitting diode lamp that is configured to transmit light,
The red light conversion layer covering the blue light emitting diode chip is provided before the blue light emitting diode chip is mounted, and both left and right sides extending across the groove-type recess in the side surface of the blue light emitting diode chip The film thickness of the red light conversion layer on the surface is made thicker than the film thickness of the red light conversion layer on the left and right side surfaces extending in the longitudinal direction of the groove-type recess among the side surfaces of the blue light emitting diode chip. "
It is characterized by that.

また，本発明の請求項２は，
「前記請求項１の記載において，前記青色発光ダイオードチップの上面に電極が形成されており，この電極は，前記赤色光変換層から露出している。」
ことを特徴としている。
更にまた，本発明の請求項３は，
「前記請求項２の記載において，前記赤色光変換層は，前記青色発光ダイオードチップの側面のみを被覆する構成である。」
ことを特徴としている。 Further, claim 2 of the present invention is
“In the first aspect of the present invention, an electrode is formed on the upper surface of the blue light emitting diode chip, and the electrode is exposed from the red light conversion layer .”
It is characterized by that.
Furthermore, claim 3 of the present invention provides
“In claim 2, the red light conversion layer is configured to cover only the side surface of the blue light emitting diode chip .”
It is characterized by that.

次に，本発明の製造方法は，請求項４に記載したように，
「ランプ本体の先端面に設けた溝型凹所内のうち実質的中心部における内底面に，青色発光ダイオードチップをマウントする工程と，
前記溝型凹所内に，光透過性合成樹脂に前記青色発光ダイオードチップにおける青色光により励起されて赤色光を放射する赤色蛍光体の粉末を混入して成る赤色光変換層を前記青色発光ダイオードチップを被覆するように設ける工程と，
前記溝型凹所内に，光透過性合成樹脂に前記青色光により励起されて緑色光を放射する緑色蛍光体の粉末を混入して成る緑色光変換層を設ける工程とを備えて成る発光ダイオードランプの製造方法において，
前記赤色光変換層を設ける工程が，前記青色発光ダイオードチップをマウントする前であり，且つ，前記青色発光ダイオードチップにおける側面のうち前記溝型凹所を横切るように延びる左右両側面における前記赤色光変換層の膜厚さを，前記青色発光ダイオードチップにおける側面のうち前記溝型凹所の長手方向に延びる左右両側面における前記赤色光変換層の膜厚さよりも厚くする工程であり，更に，前記緑色光変換層を設ける工程が，予め緑色蛍光体の粉末を混入した光透過性合成樹脂を液体の状態で注入する工程と，この液体状の光透過性合成樹脂を，前記溝型凹所を下向きにした姿勢に保持し，この姿勢のままで硬化処理する工程とからなる。」
ことを特徴としている。 Next, the manufacturing method of the present invention, as described in claim 4 ,
“A step of mounting a blue light emitting diode chip on the inner bottom surface in the substantially central portion of the groove-shaped recess provided in the front end surface of the lamp body;
In the groove-shaped recess, a red light conversion layer formed by mixing a light-transmitting synthetic resin with a red phosphor powder that emits red light excited by blue light in the blue light-emitting diode chip is provided in the blue light-emitting diode chip. Providing a coating so as to cover
And a step of providing a green light conversion layer in which the green phosphor powder that emits green light when excited by the blue light is mixed with the light-transmitting synthetic resin in the groove-shaped recess. In the manufacturing method of
The step of providing the red light conversion layer is before the blue light emitting diode chip is mounted, and the red light on the left and right side surfaces extending across the groove-shaped recess among the side surfaces of the blue light emitting diode chip. The step of making the film thickness of the conversion layer thicker than the film thickness of the red light conversion layer on both the left and right side surfaces extending in the longitudinal direction of the groove-shaped recess among the side surfaces of the blue light emitting diode chip, The step of providing a green light conversion layer includes a step of injecting a light-transmitting synthetic resin mixed with a green phosphor powder in a liquid state, and the liquid light-transmitting synthetic resin into the groove-shaped recess. It consists of a process of holding in a downward posture and performing a curing process in this posture. "
It is characterized by that.

青色発光ダイオードチップを被覆する赤色光変換層における膜厚さを，前記青色発光ダイオードチップにおける側面のうち前記溝型凹所を横切るように延びる左右両側面において厚くしたことにより，前記青色発光ダイオードチップから前記溝型凹所における長方形開口部のうち両端の部分又はこれに近い部分に向かう青色光は，前記赤色光変換層のうち膜厚さが厚い部分を透過することになるから，この青色光の前記赤色光変換層による赤色光への変換が不十分になることを確実に防止できる。   The film thickness of the red light conversion layer covering the blue light emitting diode chip is increased on both the left and right side surfaces extending across the groove-type recess among the side surfaces of the blue light emitting diode chip. The blue light traveling from the rectangular opening in the groove-shaped recess to the both end portions or a portion close thereto passes through the thick portion of the red light conversion layer. Can be reliably prevented from being converted into red light by the red light conversion layer.

従って，本発明によると，前記溝型凹所における長方形開口部から細長い扁平な形態で発射される白色光を，前記赤色光変換層及び緑色光変態層によって，各所一様な色調に揃えることができる。   Therefore, according to the present invention, white light emitted in an elongated flat form from the rectangular opening in the groove-type recess can be aligned in a uniform color tone by the red light conversion layer and the green light transformation layer. it can.

そして，請求項４に記載した製造方法によると，前記請求項２に記載した構成の発光ダイオードランプを，簡単な方法で，低コストで製造できる利点がある。
According to the manufacturing method described in claim 4 , there is an advantage that the light-emitting diode lamp having the structure described in claim 2 can be manufactured at a low cost by a simple method.

以下，本発明の実施の形態を，図面について説明する。   Hereinafter, embodiments of the present invention will be described with reference to the drawings.

図１〜図５は，第１の実施の形態による発光ダイオードランプを示す。   1 to 5 show a light emitting diode lamp according to a first embodiment.

これらの図において，符号１は，合成樹脂等の絶縁体製のランプ本体を，符号２は，図示しない液晶表示装置において，そのバックライト光源として裏面に配設される透明な導光板を各々示す。   In these drawings, reference numeral 1 denotes a lamp body made of an insulator such as synthetic resin, and reference numeral 2 denotes a transparent light guide plate disposed on the back surface as a backlight light source in a liquid crystal display device (not shown). .

前記ランプ本体１のうち前記導光板２における側面２ａに対面する先端面１ａには，細長い長方形の開口部を有するように溝型にした凹所３が設けられている一方，前記ランプ本体１には，一対の金属板製のリード端子４，５が前記凹所３における内側面に露出するように埋設されている。   The lamp body 1 is provided with a recess 3 in a groove shape so as to have an elongated rectangular opening at a front end surface 1a of the light guide plate 2 facing the side surface 2a. Are embedded such that a pair of lead terminals 4 and 5 made of a metal plate are exposed on the inner surface of the recess 3.

前記各図において，符号６は，青色発光ダイオードチップを示し，この青色発光ダイオードチップ６は，一辺がＡの正方形であり，例えば，ｎ型ＳｉＣ結晶基板等の透明な厚さの厚いｎ型半導体層６ａの下面に，ｐ型半導体層６ｂをその間に青色発光の発光層６ｃを挟んで形成し，前記ｎ型半導体層６ａの上面にｎ電極６ｄを，前記ｐ型半導体層６ｂの下面にｐ電極６ｅを各々形成したものに構成されている。   In each of the drawings, reference numeral 6 denotes a blue light-emitting diode chip, and this blue light-emitting diode chip 6 is a square having a side A, for example, an n-type semiconductor having a transparent thickness such as an n-type SiC crystal substrate. A p-type semiconductor layer 6b is formed on the lower surface of the layer 6a with a blue light emitting layer 6c interposed therebetween, an n-electrode 6d is formed on the upper surface of the n-type semiconductor layer 6a, and a p-type semiconductor layer is formed on the lower surface of the p-type semiconductor layer 6b. Each electrode 6e is formed.

前記青色発光ダイオードチップ６は，図３〜図５に示すように，その上面におけるｎ電極６ｄ及び下面におけるｐ電極６ｅを除く部分，つまり，その側面が，光透過性合成樹脂に前記青色発光ダイオードチップ６における青色光により励起されて赤色光を放射する赤色蛍光体の粉末を混入して成る赤色光変換層７にて被覆されている。   As shown in FIGS. 3 to 5, the blue light-emitting diode chip 6 has a portion excluding the n-electrode 6d on the upper surface and the p-electrode 6e on the lower surface, that is, the side surface of the blue light-emitting diode on the light transmitting synthetic resin. The chip 6 is covered with a red light conversion layer 7 in which powder of a red phosphor that emits red light when excited by blue light is mixed.

前記したように赤色光変換層７にて被覆して成る構成の青色発光ダイオードチップ６を，前記ランプ本体１の溝型凹所３における内底面３ａのうち溝型凹所３の中心部又はその近傍を含む実質的中心部の部分に配設し，前記ランプ本体１における先端面１ａと直角の方向が見て，その四つの側面のうち互いに平行な二つの側面６′が前記溝型凹所３の長手方向と平行又は実質的に平行に延び，残りの互いに平行な二つの側面６″が前記溝型凹所３の長手方向と直角又は実質的に直角（横切る方向）に延びる姿勢にして，この姿勢の状態で，下面におけるｐ電極６ｅを前記一対のリード端子４，５のうち一方のリード端子４に電気的に接続するように接合（ダイボンディング）し，更に，その上面におけるｎ電極６ｄと他方のリード端子５との間を，細い金属線８によるワイヤボンディングにて電気的に接続する。   As described above, the blue light-emitting diode chip 6 configured to be covered with the red light conversion layer 7 is formed at the center of the groove-type recess 3 of the inner bottom surface 3a of the groove-type recess 3 of the lamp body 1 or its Two side surfaces 6 ', which are arranged in a substantially central portion including the vicinity and seen in the direction perpendicular to the front end surface 1a of the lamp body 1, are parallel to each other among the four side surfaces. The other two side surfaces 6 ″ extend parallel to or substantially parallel to the longitudinal direction of the groove 3, and extend in a direction perpendicular to or substantially perpendicular to the longitudinal direction of the groove-shaped recess 3. In this state, the p-electrode 6e on the lower surface is joined (die-bonded) so as to be electrically connected to one of the pair of lead terminals 4 and 5, and the n-electrode on the upper surface thereof. 6d and the other lead terminal 5 And electrically connected by wire bonding using thin metal wires 8.

次いで，前記ランプ本体１における溝型凹所３内に，透明な合成樹脂等による光透過層９を形成したのち，この光透過層９の表面に重ねて，光透過性合成樹脂に前記青色発光ダイオードチップ６における青色光により励起されて緑色光を放射する緑色蛍光体の粉末を混入して成る緑色光変換層１０を，前記溝型凹所３における長方形開口部の全体を塞ぐように形成する。   Next, a light transmitting layer 9 made of a transparent synthetic resin or the like is formed in the groove-shaped recess 3 in the lamp body 1 and then superimposed on the surface of the light transmitting layer 9 so that the light transmitting synthetic resin has the blue light emission. A green light conversion layer 10 formed by mixing powder of a green phosphor excited by blue light and emitting green light in the diode chip 6 is formed so as to block the entire rectangular opening in the groove-type recess 3. .

前記光透過層９は，前記赤色蛍光体及び前記緑色蛍光体のうちいずれか一方又は両方を一切含有しないか，或いは含有量の少ない構成であり，この光透過層９を，透明な合成樹脂に代えて空間に構成することができる。   The light transmission layer 9 is configured so as not to contain any one or both of the red phosphor and the green phosphor, or to have a low content. The light transmission layer 9 is made of a transparent synthetic resin. Instead, it can be configured in a space.

そして，前記赤色光変換層７における膜厚さを，前記青色発光ダイオードチップ６における各側面のうち前記溝型凹所３の長手方向と平行又は実質的に平行な二つの側面６′の部分においては，寸法Ｓ１にするというように薄くする一方，前記溝型凹所３の長手方向と直角又は実質的に直角な二つの側面６″の部分においては，寸法Ｓ２にするというように厚くしている。   Then, the thickness of the red light conversion layer 7 is determined at the two side surfaces 6 ′ that are parallel or substantially parallel to the longitudinal direction of the groove-shaped recess 3 among the side surfaces of the blue light emitting diode chip 6. Is made thin so as to have a dimension S1, while the portion of the two side surfaces 6 "perpendicular to or substantially perpendicular to the longitudinal direction of the groove-shaped recess 3 is made thick so as to have a dimension S2. Yes.

この構成において，溝型凹所３内における実質的に中心に位置する青色発光ダイオードチップ６から発射された青色光は，先ず赤色光変換層７を透過するとき赤色光に変換され，次いで緑色光変換層１０を透過するとき緑色光に変換されるから，前記溝型凹所３における長方形開口部からは，前記青色光，前記赤色光及び前記緑色光の合成光から成る白色光が，バックライト光源としての導光板２に向かって放射される。   In this configuration, the blue light emitted from the blue light emitting diode chip 6 located substantially at the center in the groove-shaped recess 3 is first converted into red light when passing through the red light conversion layer 7, and then green light. Since it is converted into green light when passing through the conversion layer 10, white light composed of the blue light, the red light and the combined light of the green light is emitted from the rectangular opening in the groove-shaped recess 3. The light is emitted toward the light guide plate 2 as a light source.

この場合において，前記青色発光ダイオードチップ６から前記溝型凹所３における長方形開口部のうち両端の部分又はこれに近い部分に向かう青色光は，前記赤色光変換層７のうち膜厚さがＳ２と厚い部分を透過することにより，この青色光の前記赤色光変換層７による赤色光への変換が不十分になることを確実に防止できるから，前記溝型凹所３における長方形開口部から細長い扁平な形態で発射される白色光を，各所一様な色調に揃えることができる。   In this case, the blue light from the blue light-emitting diode chip 6 toward the both ends of the rectangular opening in the groove-shaped recess 3 or a portion close thereto has a film thickness of S2 in the red light conversion layer 7. By passing through the thick part, it is possible to reliably prevent the blue light from being converted into red light by the red light conversion layer 7, so that it is elongated from the rectangular opening in the groove-type recess 3. White light emitted in a flat form can be aligned in a uniform color everywhere.

ところで，青色発光ダイオードチップ６に対して，その青色光が透過する前記赤色光変換層７と前記緑色光変換層１０とをこの順序に設ける場合，前記赤色光変換層７と前記緑色光変換層１０とを互いに密接しているときには，前記緑色光変換層１０における波長の短い緑色光の一部が，前記赤色光変換層７における波長の長い赤色光に直接に吸収されることにより，その分だけ前記緑色光変換層における緑色光が弱くなるから，白色光に近づけることのために，前記緑色光変換層における緑色蛍光体の混入量を多くしなければないばかりか，全体としての白色発光の光度が低下することになる。   By the way, when the red light conversion layer 7 and the green light conversion layer 10 that transmit blue light are provided in this order for the blue light emitting diode chip 6, the red light conversion layer 7 and the green light conversion layer are provided. 10 are in close contact with each other, a part of the green light having a short wavelength in the green light conversion layer 10 is directly absorbed by the red light having a long wavelength in the red light conversion layer 7. Since the green light in the green light conversion layer is weakened, the amount of green phosphor mixed in the green light conversion layer has to be increased in order to bring it closer to white light. The light intensity will decrease.

これに対して，前記したように，前記赤色光変換層７と前記緑色光変換層１０との間に，前記赤色蛍光体及び緑色蛍光体のうちいずれか一方又は両方を含有しないか，或いは含有量の少ない光透過層９を設けるという構成にした場合には，前記緑色光変換層１０と，前記赤色光変換層７とが，前記光透過層９の分だけ離れることになり，前記緑色光変換層１０における波長の短い緑色光が，前記赤色光変換層７における赤色光に吸収されることを，その間に存在する前記光透過層９にて確実に減少することができて，前記緑色光変換層１０における緑色光を向上できるから，白色発光にすることに要する緑色蛍光体の混入量を少なくできるとともに，全体しての白色発光の光度を向上できる。   On the other hand, as described above, either or both of the red phosphor and the green phosphor are not contained or contained between the red light conversion layer 7 and the green light conversion layer 10. When the light transmission layer 9 with a small amount is provided, the green light conversion layer 10 and the red light conversion layer 7 are separated from each other by the light transmission layer 9, and the green light The fact that green light having a short wavelength in the conversion layer 10 is absorbed by the red light in the red light conversion layer 7 can be reliably reduced by the light transmission layer 9 existing between the green light and the green light. Since the green light in the conversion layer 10 can be improved, the amount of green phosphor required for white light emission can be reduced, and the luminous intensity of white light emission as a whole can be improved.

次に，図８〜図１０は，第２の実施の形態による発光ダイオードランプの製造方法を示す。   Next, FIGS. 8 to 10 show a method for manufacturing a light-emitting diode lamp according to the second embodiment.

この製造方法は，先ず，図８に示すように，ランプ本体１における溝型凹所３内に，予め赤色光変換層７にて被覆して成る青色発光ダイオードチップ６を，一方のリード端子４にダイボンディングするように設け，この青色発光ダイオードチップ６と他方のリード端子５との間を金属線８にてワイヤボンディングする。   In this manufacturing method, first, as shown in FIG. 8, a blue light-emitting diode chip 6 previously coated with a red light conversion layer 7 is provided in one of the lead terminals 4 in the groove-shaped recess 3 in the lamp body 1. The blue light emitting diode chip 6 and the other lead terminal 5 are wire-bonded with a metal wire 8.

次いで，図９に示すように，前記凹所３を上向きにして，この凹所３内に，予め緑色蛍光体の粉末を混入して成る光透過性合成樹脂１０′を液体の状態で適宜量だけ注入することによって，この光透過性合成樹脂１０′にて前記青色発光ダイオードチップ６及び赤色光変換層７の全体を被覆する。   Next, as shown in FIG. 9, an appropriate amount of a light-transmitting synthetic resin 10 'prepared by mixing green phosphor powder in advance is placed in the recess 3 with the recess 3 facing upward. The blue light emitting diode chip 6 and the red light conversion layer 7 are entirely covered with the light transmissive synthetic resin 10 '.

次いで，図１０に示すように，前記凹所３を下向きにした姿勢にして，この姿勢を適宜時間の間だけ保持する。   Next, as shown in FIG. 10, the recess 3 is placed in a downward position, and this position is maintained for an appropriate time.

これにより，前記光透過性合成樹脂１０′に混入している緑色蛍光体の粉末は，比重差で沈殿することになる。   As a result, the green phosphor powder mixed in the light-transmitting synthetic resin 10 'precipitates due to the difference in specific gravity.

この沈殿が完了又は略完了した時点で，前記光透過性合成樹脂１０′を，液体にする溶剤の乾燥，紫外線の照射又は加熱等の硬化処理を行って硬化処理することにより，図１０に示すように，前記青色発光ダイオードチップ６に対して最も外側に緑色蛍光体の粉末を含む緑色光変換層１０ａを形成することができるとともに，前記緑色光変換層１０ａと，前記赤色光変換層７との間に，緑色蛍光体及び赤色蛍光体のうちいずれか一方又は両方を含有しないか，或いは含有量の少ない光透過層９ａを形成することができる。   When this precipitation is completed or almost completed, the light-transmitting synthetic resin 10 'is cured by performing a curing process such as drying of the solvent to be liquid, irradiation of ultraviolet rays or heating, as shown in FIG. As described above, the green light conversion layer 10a including the green phosphor powder can be formed on the outermost side with respect to the blue light emitting diode chip 6, and the green light conversion layer 10a, the red light conversion layer 7, and the like. The light transmission layer 9a that does not contain one or both of the green phosphor and the red phosphor or has a small content can be formed.

なお，前記各実施の形態は，青色発光ダイオードチップ６を，前記赤色光変換層７にて被覆した状態で溝型凹所３内にマウントする場合であったが，本発明は，これに限らず，青色発光ダイオードチップ６を溝型凹所３内にマウントしたのち，これを赤色光変換層７にて被覆するという構成にしても良いことはいうまでもなく，また，前記一対のリード端子４，５に代えて，電極膜に構成することができる。   In each of the above embodiments, the blue light emitting diode chip 6 is mounted in the groove-type recess 3 in a state of being covered with the red light conversion layer 7, but the present invention is not limited to this. Needless to say, the blue light emitting diode chip 6 may be mounted in the groove-shaped recess 3 and then covered with the red light conversion layer 7. It can replace with 4 and 5 and can comprise in an electrode film.

第１の実施の形態に係る発光ダイオードランプを示す斜視図である。It is a perspective view which shows the light emitting diode lamp which concerns on 1st Embodiment. 図１のII−II視断面図である。FIG. 2 is a sectional view taken along line II-II in FIG. 1. 図２のIII −III 視断面図である。FIG. 3 is a sectional view taken along line III-III in FIG. 2. 図３のIV−IV視断面図である。FIG. 4 is a sectional view taken along line IV-IV in FIG. 3. 赤色光変換層にて被覆した青色発光ダイオードチップを示す斜視図である。It is a perspective view which shows the blue light emitting diode chip | tip coat | covered with the red light conversion layer. 図５のVI−VI視断面図である。FIG. 6 is a sectional view taken along line VI-VI in FIG. 5. 図５のVII −VII 視断面図である。FIG. 7 is a sectional view taken along line VII-VII in FIG. 5. 第２の実施の形態に係る発光ダイオードランプを製造する第１工程を示す図である。It is a figure which shows the 1st process of manufacturing the light emitting diode lamp which concerns on 2nd Embodiment. 第２の実施の形態に係る発光ダイオードランプを製造する第２工程を示す図である。It is a figure which shows the 2nd process of manufacturing the light emitting diode lamp which concerns on 2nd Embodiment. 第２の実施の形態に係る発光ダイオードランプを製造する第３工程を示す図である。It is a figure which shows the 3rd process of manufacturing the light emitting diode lamp which concerns on 2nd Embodiment.

符号の説明Explanation of symbols

１ ランプ本体
３ 溝型凹所
４，５ リード端子
６ 青色発光ダイオードチップ
７ 赤色光変換層
８ 金属線
９，９ａ 光透過層
１０，１０ａ 緑色光変換層 DESCRIPTION OF SYMBOLS 1 Lamp main body 3 Groove-shaped recess 4,5 Lead terminal 6 Blue light emitting diode chip 7 Red light conversion layer 8 Metal wire 9, 9a Light transmission layer 10, 10a Green light conversion layer

Claims (4)

ランプ本体の先端面に，細長い長方形の開口部を有するように溝型にした凹所を設け，この溝型凹所の実質的中心部における内底面に，青色発光ダイオードチップをマウントし，更に，前記凹所に，光透過性合成樹脂に前記青色発光ダイオードチップにおける青色光により励起されて赤色光を放射する赤色蛍光体の粉末を混入して成る赤色光変換層を前記青色発光ダイオードチップを被覆するように設けるとともに，光透過性合成樹脂に前記青色光により励起されて緑色光を放射する緑色蛍光体の粉末を混入して成る緑色光変換層を，前記青色光が当該緑色光変換層を透過するように設けて成る薄型発光ダイオードランプにおいて，
前記青色発光ダイオードチップを被覆する赤色光変換層は，前記青色発光ダイオードチップをマウントする前に設ける構成であり，前記青色発光ダイオードチップにおける側面のうち前記溝型凹所を横切るように延びる左右両側面における前記赤色光変換層の膜厚さを，前記青色発光ダイオードチップにおける側面のうち前記溝型凹所の長手方向に延びる左右両側面における前記赤色光変換層の膜厚さよりも厚くすることを特徴とする薄型発光ダイオードランプ。 A groove-shaped recess is provided on the front end surface of the lamp body so as to have an elongated rectangular opening, and a blue light-emitting diode chip is mounted on the inner bottom surface at the substantial center of the groove-shaped recess. The blue light emitting diode chip is covered with a red light conversion layer formed by mixing a powder of a red phosphor that emits red light excited by blue light in the blue light emitting diode chip into a light transmitting synthetic resin. A green light conversion layer formed by mixing a green phosphor powder that emits green light excited by the blue light into the light-transmitting synthetic resin, and the blue light passes through the green light conversion layer. In a thin light-emitting diode lamp that is configured to transmit light,
The red light conversion layer covering the blue light emitting diode chip is provided before the blue light emitting diode chip is mounted, and both left and right sides extending across the groove-type recess in the side surface of the blue light emitting diode chip The film thickness of the red light conversion layer on the surface is made thicker than the film thickness of the red light conversion layer on the left and right side surfaces extending in the longitudinal direction of the groove-shaped recess in the side surface of the blue light emitting diode chip. Features a thin light-emitting diode lamp. 前記請求項１の記載において，前記青色発光ダイオードチップの上面に電極が形成されており，この電極は，前記赤色光変換層から露出する構成であることを特徴とする薄型発光ダイオードランプ。 2. The thin light emitting diode lamp according to claim 1, wherein an electrode is formed on an upper surface of the blue light emitting diode chip, and the electrode is exposed from the red light conversion layer . 前記請求項２の記載において，前記赤色光変換層は，前記青色発光ダイオードチップの側面のみを被覆する構成であることを特徴とする薄型発光ダイオードランプ。3. The thin light emitting diode lamp according to claim 2, wherein the red light conversion layer covers only a side surface of the blue light emitting diode chip. ランプ本体の先端面に設けた溝型凹所内のうち実質的中心部における内底面に，青色発光ダイオードチップをマウントする工程と，Mounting a blue light emitting diode chip on the inner bottom surface in the substantially central portion of the groove-shaped recess provided on the front end surface of the lamp body;
前記溝型凹所内に，光透過性合成樹脂に前記青色発光ダイオードチップにおける青色光により励起されて赤色光を放射する赤色蛍光体の粉末を混入して成る赤色光変換層を前記青色発光ダイオードチップを被覆するように設ける工程と，In the groove-shaped recess, a red light conversion layer formed by mixing a light-transmitting synthetic resin with a red phosphor powder that emits red light excited by blue light in the blue light-emitting diode chip is provided in the blue light-emitting diode chip. Providing a coating so as to cover
前記溝型凹所内に，光透過性合成樹脂に前記青色光により励起されて緑色光を放射する緑色蛍光体の粉末を混入して成る緑色光変換層を設ける工程とを備えて成る発光ダイオードランプの製造方法において，And a step of providing a green light conversion layer in which the green phosphor powder that emits green light when excited by the blue light is mixed with the light-transmitting synthetic resin in the groove-shaped recess. In the manufacturing method of
前記赤色光変換層を設ける工程が，前記青色発光ダイオードチップをマウントする前であり，且つ，前記青色発光ダイオードチップにおける側面のうち前記溝型凹所を横切るように延びる左右両側面における前記赤色光変換層の膜厚さを，前記青色発光ダイオードチップにおける側面のうち前記溝型凹所の長手方向に延びる左右両側面における前記赤色光変換層の膜厚さよりも厚くする工程であり，更に，前記緑色光変換層を設ける工程が，予め緑色蛍光体の粉末を混入した光透過性合成樹脂を液体の状態で注入する工程と，この液体状の光透過性合成樹脂を，前記溝型凹所を下向きにした姿勢に保持し，この姿勢のままで硬化処理する工程とからなることを特徴とする発光ダイオードランプの製造方法。The step of providing the red light conversion layer is before the blue light emitting diode chip is mounted, and the red light on the left and right side surfaces extending across the groove-shaped recess among the side surfaces of the blue light emitting diode chip. The step of making the film thickness of the conversion layer thicker than the film thickness of the red light conversion layer on both the left and right side surfaces extending in the longitudinal direction of the groove-shaped recess among the side surfaces of the blue light emitting diode chip, The step of providing a green light conversion layer includes a step of injecting a light-transmitting synthetic resin mixed with a green phosphor powder in a liquid state, and the liquid light-transmitting synthetic resin into the groove-shaped recess. A method of manufacturing a light-emitting diode lamp, characterized by comprising a step of holding in a downward posture and performing a curing process in this posture.
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