CN101356656A - Thin-type light emitting diode lamp, and its manufacturing method - Google Patents
Thin-type light emitting diode lamp, and its manufacturing method Download PDFInfo
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- CN101356656A CN101356656A CN200680050472.1A CN200680050472A CN101356656A CN 101356656 A CN101356656 A CN 101356656A CN 200680050472 A CN200680050472 A CN 200680050472A CN 101356656 A CN101356656 A CN 101356656A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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Abstract
A thin-type light emitting diode lamp comprises a blue light emitting diode chip (6) disposed at the substantially central portion of the inner bottom face of a trench-type recess (3) disposed in the leading end face and having an opening of a slender rectangle shape, a red light changing layer (7) disposed to cover the blue light emitting diode chip (6) and prepared by mixing the powder of such a red fluorescent material into a light transmitting synthetic resin as is excited with the blue light emitted by the blue light emitting diode chip to emit a red light, and a green light changing layer (10) prepared by mixing the powder of such a green fluorescent material into a light transmitting synthetic resin as is excited with the blue light to emit a green light. A light transmitting layer (9) containing either none of the red light fluorescent material and the green light fluorescent material or little is disposed between the red light changing layer (7) and the green light changing layer (10).
Description
Technical field
The present invention relates to for example to be used for the thin-type light emitting diode lamp and the manufacture method thereof of lamp that the back light of liquid crystal indicator uses etc.
Background technology
Always, as putting down in writing as the patent documentation 1 of look-ahead technique and patent documentation 2, this thin-type light emitting diode lamp for example constitutes in the following ways.That is, the top end face in the lamp main body is provided with the grooved recess with elongated oblong openings portion.Approximate centre portion at the inner bottom surface of this grooved recess is packaged with light-emitting diode chip for backlight unit.Medial surface at the grooved recess is provided with inclination, makes to launch the light that light-emitting diode chip for backlight unit sends from oblong openings portion.
Recently, developing the light-emitting diode chip for backlight unit that for example utilizes GaN class etc. to send blue light.Known this blue led chips has high brightness.In patent documentation 3 and patent documentation 4, record a kind of white luminous device that constitutes in the mode of using blue led chips to send white light as look-ahead technique.
These white luminous devices constitute in the following ways.Promptly, be provided with the red light conversion layer of in translucent synthetic resin, sneaking into the red-emitting phosphors powder and forming and in translucent synthetic resin, sneak into the green-emitting phosphor powder and the green light conversion layer that forms, wherein, this red-emitting phosphors powder is by blue light excitation back emission red light, and this green-emitting phosphor powder is by blue light excitation back transmitting green light.See through the red light conversion layer from the blue light of blue led chips emission, so, from red light conversion layer emission red light.In addition, the blue light that sees through the red light conversion layer sees through the green light conversion layer, so, from green light conversion layer transmitting green light.From the blue light of blue led chips emission, be synthesized and launch white light from the red light of red light conversion layer emission and from the green light of green light conversion layer emission.
And, in patent documentation 3, adopt a kind of surface to form the green light conversion layer closely in blue led chips, form the structure of above-mentioned red light conversion layer then closely at the lateral surface of this green light conversion layer.In addition, in patent documentation 4, adopt a kind of outside that is arranged on the red light conversion layer in position to be formed with the structure of the conversion layer of green light conversion layer closely away from blue led chips.
So,, constitute the thin-type light emitting diode lamp that sends white light by in above-mentioned thin-type light emitting diode lamp, using this white luminous device.That is, in thin-type light emitting diode lamp, blue led chips is installed in the approximate centre portion of the inner bottom surface of grooved recess.This blue led chips is covered by the red light conversion layer, is formed with the green light conversion layer in the outside of this red light conversion layer.Adopt this structure, can be from the oblong openings portion emission white light of the grooved recess of above-mentioned thin-type light emitting diode lamp.
Patent documentation 1: TOHKEMY 2001-36147 communique
Patent documentation 2: TOHKEMY 2005-317820 communique
Patent documentation 3: Japanese Unexamined Patent Application Publication 2002-510866 communique
Patent documentation 4: TOHKEMY 2005-228996 communique
And blue light wavelength is the shortest, is about about 450nm, and green light wavelength is about about 530nm, and red light wavelength is the longest, is about about 650nm.The short light of wavelength has than the easier absorbed characteristic of the long light of ripple.Therefore, be close to mutually and under the situation about constituting,, directly absorbed by the red light conversion layer from the part of the short green light of the wavelength of green light conversion layer emission in the interface of red light conversion layer and green light conversion layer at red light conversion layer and green light conversion layer.Therefore, the light quantity of the green light of green light conversion layer emission reduces and the corresponding part of amount that is absorbed by the red light conversion layer.Wherein, the green light that is absorbed by the red light conversion layer becomes heat energy and is consumed.
Therefore, adopting under the situation of this structure, for the synthetic light that makes emission more near white light, must increase the green light that produces.That is, must increase the mixed volume of the green-emitting phosphor in the green light conversion layer.In addition, also there is the problem that is absorbed the corresponding decline of brightness that causes whole white light because of green light.
In addition because the grooved recess forms elongated grooved, therefore, from the path of the light of blue led chips emission, along with along the length direction of grooved recess away from blue led chips elongated gradually.So, from the light of blue led chips near launch the two ends of the oblong openings portion of grooved recess light owing to, therefore can be converted to red light by the red light conversion layer fully by long path.Thus, exist from the inconsistent problem of tone of the white light of emission everywhere of the oblong openings portion of slim recess.
Summary of the invention
Technical task of the present invention is to provide a kind of white luminous thin-type light emitting diode lamp and manufacture method thereof that can address these problems.
The thin-type light emitting diode lamp that a first aspect of the present invention provides, it comprises: the lamp main body that is provided with the grooved recess with elongated oblong openings portion at top end face; The blue led chips that is provided with in the approximate centre portion of the inner bottom surface of the above-mentioned recess of this lamp main body; Be provided with in the mode that covers above-mentioned blue led chips in translucent synthetic resin, sneak into the red-emitting phosphors powder and the red light conversion layer that forms and in translucent synthetic resin, sneak into the green-emitting phosphor powder and the green light conversion layer that forms, this red-emitting phosphors powder is by blue light excitation back emission red light, this green-emitting phosphor powder is by blue light excitation back transmitting green light, and this thin-type light emitting diode lamp is characterised in that: be provided with any or the content that do not contain in above-mentioned red-emitting phosphors and the green-emitting phosphor and be less than above-mentioned red light conversion layer between above-mentioned red light conversion layer and above-mentioned green light conversion layer, the photic zone of above-mentioned green light conversion layer.
In the described thin-type light emitting diode lamp of claim 1, above-mentioned photic zone also can be the space.
In the described thin-type light emitting diode lamp of claim 1, above-mentioned photic zone can be a translucent synthetic resin.
In claim 1～3 in any described thin-type light emitting diode lamp, in above-mentioned red light conversion layer, also can make the thickness of the part that two sides of the length direction that is orthogonal to above-mentioned recess in the side with above-mentioned blue led chips join, than with the side of above-mentioned blue led chips in the thickness of two sides of extending of the length direction at the above-mentioned recess part of joining thicker.
The manufacture method of the thin-type light emitting diode lamp that a second aspect of the present invention provides comprises: first operation that blue led chips is installed in the approximate centre portion of the inner bottom surface of the grooved recess of the top end face that is arranged on the lamp main body; To cover the mode of above-mentioned blue led chips, be formed on second operation of the red light conversion layer of sneaking into the red-emitting phosphors powder in the translucent synthetic resin and forming, wherein, this red-emitting phosphors powder blue light excitation back emission red light of being launched by above-mentioned blue led chips; With the outside at above-mentioned red light conversion layer, be formed on the 3rd operation of the green light conversion layer of sneaking into the green-emitting phosphor powder in the translucent synthetic resin and forming, wherein, this green-emitting phosphor powder is by above-mentioned blue light excitation back transmitting green light, and the manufacture method of this thin-type light emitting diode lamp is characterised in that: above-mentioned second operation is made of following operation: the translucent synthetic resin that will sneak into the red-emitting phosphors powder in advance injects operation in the above-mentioned recess with liquid condition; The peristome that keeps above-mentioned recess is the operation that is positioned at the posture of upside; With the operation of under the state that keeps this posture, the translucent synthetic resin of aforesaid liquid being implemented cured.
The manufacture method of the thin-type light emitting diode lamp that a third aspect of the present invention provides, comprise: to cover the mode of blue led chips, be formed on first operation of the red light conversion layer of sneaking into the red-emitting phosphors powder in the translucent synthetic resin and forming, wherein, this red-emitting phosphors powder blue light excitation back emission red light of being launched by above-mentioned blue led chips; Second operation of above-mentioned blue led chips is installed in the approximate centre portion of the inner bottom surface of the grooved recess of the top end face that is arranged on the lamp main body; With the outside at above-mentioned red light conversion layer, be formed on the 3rd operation of the green light conversion layer of sneaking into the green-emitting phosphor powder in the translucent synthetic resin and forming, wherein, this green-emitting phosphor powder is by above-mentioned blue light excitation back transmitting green light, the manufacture method of this thin-type light emitting diode lamp is characterised in that: above-mentioned first operation is, make the thickness of the above-mentioned red light conversion layer of the part that two sides of the length direction that is orthogonal to above-mentioned recess in the side with above-mentioned blue led chips join, than with the side of above-mentioned blue led chips in the thicker operation of thickness of above-mentioned red light conversion layer of two sides of extending of the length direction at the above-mentioned grooved recess part of joining.
And in the manufacture method of claim 5 or 6 described thin-type light emitting diode lamps, above-mentioned the 3rd operation is made of following operation: the translucent synthetic resin that will sneak into the green-emitting phosphor powder in advance is with the operation in the liquid condition injection grooved recess; The peristome that keeps above-mentioned grooved recess is the operation that is positioned at the posture of downside; With the operation of under the state that keeps this posture, the translucent synthetic resin of aforesaid liquid being implemented cured.
Description of drawings
Fig. 1 is the stereogram of the thin-type light emitting diode lamp of expression first execution mode of the present invention.
Fig. 2 is the II-II line sectional view of Fig. 1.
Fig. 3 is the III-III line sectional view of Fig. 2.
Fig. 4 is the IV-IV line sectional view of Fig. 3.
Fig. 5 is the stereogram of the blue led chips that covered by the red light conversion layer of expression.
Fig. 6 is the VI-VI line sectional view of Fig. 5.
Fig. 7 is the VII-VII line sectional view of Fig. 5.
Fig. 8 is the sectional view of the LED light lamp of second execution mode of the present invention.
Fig. 9 is the sectional view of the LED light lamp of the 3rd execution mode of the present invention.
Figure 10 is the figure of first operation of the method for the expression LED light lamp of making first execution mode.
Figure 11 is the figure of second operation of the method for the expression LED light lamp of making first execution mode.
Figure 12 is the figure of the 3rd operation of the method for the expression LED light lamp of making first execution mode.
Figure 13 is the figure of first operation of the method for the expression LED light lamp of making the 3rd execution mode.
Figure 14 is the figure of second operation of the method for the expression LED light lamp of making the 3rd execution mode.
Figure 15 is the figure of the 3rd operation of the method for the expression LED light lamp of making the 3rd execution mode.
Figure 16 is the figure of the 4th operation of the method for the expression LED light lamp of making the 3rd execution mode.
Figure 17 is the figure of the 3rd operation of other method of the expression LED light lamp of making the 3rd execution mode.
Embodiment
Below, with reference to the description of drawings embodiments of the present invention.
Fig. 1 is the stereogram of the thin-type light emitting diode lamp of expression first execution mode.Fig. 2 is an II-II line sectional view.Fig. 3 is the III-III line sectional view of Fig. 2.Fig. 4 is the IV-IV line sectional view of Fig. 3.
In Fig. 1～Fig. 4, the lamp main body of insulation systems such as symbol 1 expression synthetic resin.Symbol 2 expressions are arranged on the transparent light guide plate at the back side of not shown liquid crystal indicator.This light guide plate be used for as the photoconduction of the thin-type light emitting diode lamp emission of the present embodiment of back light to liquid crystal indicator.
The top end face 1a place relative with light guide plate 2 in lamp main body 1 is provided with the grooved recess 3 with elongated oblong openings portion.And, in lamp main body 1, being embedded with the lead terminal 4,5 of pair of metal system, it exposes the inner bottom surface at grooved recess 3.In addition, the approximate centre portion at the inner bottom surface of grooved recess 3 is provided with blue led chips 6.
In addition, as Fig. 2～shown in Figure 4, the side of blue led chips 6 is covered by red light conversion layer 7.And, be provided with green light conversion layer 10 in the mode of the whole peristome of cramming grooved recess 3.And, be provided with photic zone 9 between red light conversion layer 7 in grooved recess 3 and the green light conversion layer 10.
Red light conversion layer 7 is formed by the translucent synthetic resin of sneaking into the red-emitting phosphors powder, wherein, and the blue light excitation back emission red light that this red-emitting phosphors powder is launched by blue led chips 6.Green light conversion layer 10 is formed by the translucent synthetic resin of sneaking into the green-emitting phosphor powder, wherein, and the blue light excitation back transmitting green light that this green-emitting phosphor powder is launched by blue led chips 6.Photic zone 9 does not form by not containing the less translucent synthetic resin of red-emitting phosphors and green-emitting phosphor or amount fully.
Fig. 5 is that the expression side is by the stereogram of the blue light light-emitting diode chip for backlight unit 6 of red light conversion layer 7 coverings.In the present embodiment, adopt a kind of approximate centre portion of the inner bottom surface at grooved recess 3 that the structure shown in Figure 5 of the blue light light-emitting diode chip for backlight unit that the side covered by red light conversion layer 7 is set.Fig. 6 is the VI-VI line sectional view of Fig. 5.Fig. 7 is the VII-VII line sectional view of Fig. 5.
As Fig. 6, shown in Figure 7, blue led chips 6 for example is made of transparent and thicker n type semiconductor layer 6a, p type semiconductor layer 6b, luminescent layer 6c, the n electrode 6d of blue-light-emitting, p electrode 6e such as n type SiC crystalline substrates.N type semiconductor layer 6a clips luminescent layer 6c and disposes p type semiconductor layer 6b at lower surface.Upper surface at n type semiconductor layer 6a is formed with n electrode 6d, is formed with p electrode 6e at the lower surface of p type semiconductor layer 6b.
In addition, as shown in Figure 5, blue led chips 6 the length direction almost parallel of grooved recess 3 be provided with two relative sides 6 ', with the length direction of grooved recess 3 roughly the mode of quadrature be provided with two other relative side 6 ".As Fig. 2～shown in Figure 4, the p electrode 6e of the lower surface of blue led chips 6 is to engage (chip join: die bonding) with mode that lead terminal 4 is electrically connected.In addition, the n electrode 6d of upper surface is electrically connected with the mode of lead terminal 5 with wire bond through lametta 8.
And, as Fig. 5～shown in Figure 7, cover blue led chips 6 the side red light conversion layer 7 thickness with in the side 6 ' and side 6 " go up different mode and constitute.That is, the thickness of the red light conversion layer 7 of side 6 ' is that S1 is thinner, and side 6 " the thickness of red light conversion layer 7 be the size S2 bigger than size S1, thicker.
In this structure, the blue light of launching from blue led chips 6 sees through red light conversion layer 7, so from red light conversion layer 7 emission red light.And the blue light that sees through red light conversion layer 7 sees through green light conversion layer 10, so from green light conversion layer 10 transmitting green light.By from the blue light of blue led chips 6 emissions, from the red light of red light conversion layer 7 emissions and green photosynthetic white light of launching from green light conversion layer 10, launch towards light guide plate 2 from the peristome of grooved recess 3.
In the case, near the blue light of the two ends of the oblong openings portion of grooved recess 3, launching from blue led chips 6 see through thickness the red light conversion layer 7 be S2 than thickness portion.Therefore, can prevent reliably that blue light from converting the inadequate situation of conversion of red light to through red light conversion layer 7.Thus, can make from the tone of the white light of the oblong openings portion of grooved recess 3 emission consistent throughout.
In addition, because of between red light conversion layer 7 and green light conversion layer 10, being provided with photic zone 9, so red light conversion layer 7 and the structure of green light conversion layer 10 for not being close to mutually.Therefore, can reduce situation about directly being absorbed by the red light conversion layer reliably from the green light of green light conversion layer 10 emissions.Because can reduce, green-emitting phosphor is sneaked into mixed volume in the green light conversion layer 10 so can reduce from the absorption of the green light of green light conversion layer 10 emission.And, because can suppress the reduction of green light light quantity, so can improve white luminous overall brightness.
Then, Fig. 8 is the sectional view of the thin-type light emitting diode lamp of expression second execution mode.This thin-type light emitting diode lamp does not adopt the photic zone 9 between translucent synthetic resin formation red light conversion layer 7 and the green light conversion layer 10, but forms the space.Adopt this structure,, can cut down material cost because do not need translucent synthetic resin in the photic zone 9 between red light conversion layer 7 and green light conversion layer 10.Other structure is identical with above-mentioned first execution mode.In the present embodiment, red light conversion layer 7 also adopts the structure of not being close to mutually with green light conversion layer 10, therefore, can obtain and the same action effect of above-mentioned first execution mode.
Then, Fig. 9 is the sectional view of the thin-type light emitting diode lamp of expression the 3rd execution mode.This thin-type light emitting diode lamp does not adopt the structure that covers red light conversion layer 7 in advance in the side of blue led chips 6.In the present embodiment, employing is after the approximate centre portion of the inner bottom surface of grooved recess 3 is provided with blue led chips 6 separately, with the structure of red light conversion layer 7 coverings.If adopt this structure, then do not need to cover red light conversion layer 7 in the side of blue led chips in advance.And,, can simplify manufacturing process by using the manufacture method of thin-type light emitting diode chip described later.Other structure is identical with above-mentioned first execution mode.In the present embodiment, red light conversion layer 7 also adopts the structure of not being close to mutually with green light conversion layer 10, therefore can obtain to reduce the action effect that green light is directly absorbed by red light conversion layer 7 reliably.
Then, Figure 10～Figure 12 represents the manufacture method of the thin-type light emitting diode lamp of first execution mode.
As shown in figure 10, this manufacture method at first is provided with the blue led chips 6 that is covered by red light conversion layer 7 in advance in the approximate centre portion of the inner bottom surface of the grooved recess 3 of lamp main body 1.At this moment, the p electrode 6e of the lower surface of blue led chips 6 is connected with lead terminal 4 by chip join.In addition, the n electrode 6d of upper surface is connected with lead terminal 5 through metal wire 8 by wire bond (wirebonding).
Then, as shown in figure 11, the peristome that makes grooved recess 3 injects an amount of liquid translucent synthetic resin 10 ' of sneaking into the green-emitting phosphor powder in advance up in grooved recess 3.Whole blue led chips 6 and red light conversion layer 7 are covered by this translucent synthetic resin 10 '.
Then, as shown in figure 12, the peristome that makes grooved recess 3 keeps this posture reasonable time down then.And, even if the translucent synthetic resin 10 ' of liquid condition must have the viscosity that also can not drip under this posture.The proportion of green-emitting phosphor powder is higher than the proportion of translucent synthetic resin.So by holding the pose, the green-emitting phosphor powder of sneaking in the translucent synthetic resin 10 ' precipitates because of difference in specific gravity.Finish or the basic moment that finishes in this precipitation, carry out the cured of translucent synthetic resin 10 '.Drying by the solvent that is used to make translucent synthetic resin 10 ' become liquid or be used to makes methods such as ultraviolet irradiation that translucent synthetic resin 10 ' solidifies or heating implement cured.
As shown in figure 12, according to this operation, comprise the green light conversion layer 10a of green-emitting phosphor powder in the outermost formation of blue led chips 6.Formation does not contain red-emitting phosphors and does not contain green-emitting phosphor yet between green light conversion layer 10a and red light conversion layer 7, perhaps their content photic zone 9a seldom.
According to this manufacture method,, therefore can cut down manufacturing cost owing to can make the thin-type light emitting diode lamp of first execution mode by simple operation.
Then, Figure 13～Figure 16 represents the manufacture method of the thin-type light emitting diode lamp of the 3rd execution mode.
This manufacture method at first is provided with blue led chips 6 separately in the approximate centre portion of the inner bottom surface of the grooved recess 3 of lamp main body 1.At this moment, the p electrode 6e of the lower surface of blue led chips 6 is connected with lead terminal 4 by chip join.In addition, the n electrode 6d of upper surface is connected with lead terminal 5 through metal wire 8 by wire bond.
Then, as shown in figure 13, the peristome that makes grooved recess 3 injects the translucent synthetic resin 7 ' of an amount of liquid condition of sneaking into the red-emitting phosphors powder in advance up then in grooved recess 3.So whole blue led chips 6 is covered by this translucent synthetic resin 7 '.And the translucent synthetic resin 7 ' of liquid condition becomes the shape of the roughly convex lens of central elevation shown in Figure 13 because of the surface tension that its viscosity produces.
Then, keep one section reasonable time of this posture.The proportion of red-emitting phosphors powder is higher than the proportion of translucent synthetic resin.Therefore, by keeping this posture, as shown in figure 14, the red-emitting phosphors powder of sneaking in the translucent synthetic resin 7 ' precipitates because of difference in specific gravity.Finish or the basic moment that finishes in this precipitation, carry out the cured of translucent synthetic resin 7 '.
According to this operation, as shown in figure 14, blue led chips 6 is covered by red light conversion layer 7a, does not contain green-emitting phosphor in the formation of the outside of red light conversion layer 7a and does not also contain red-emitting phosphors, perhaps content photic zone 9b seldom.
Then, as shown in figure 15, the peristome that makes grooved recess 3 injects the translucent synthetic resin 10 ' of an amount of liquid condition of sneaking into the green-emitting phosphor powder in advance up then in grooved recess 3.So whole blue led chips 6, red light conversion layer 7a and photic zone 9b are covered by this translucent synthetic resin 10 '.
Then, as shown in figure 16, the peristome that makes grooved recess 3 keeps this posture reasonable time down then.And, even if the translucent synthetic resin 10 ' of liquid condition must have the viscosity that also can not drip under this posture.The proportion of green-emitting phosphor powder is higher than the proportion of translucent synthetic resin.So by keeping this posture, the green-emitting phosphor powder of sneaking in the translucent synthetic resin 10 ' precipitates because of difference in specific gravity.Finish or the basic moment that finishes in this precipitation, carry out the cured of translucent synthetic resin 10 '.
According to this operation, as shown in figure 16, can form the green light conversion layer 10a that comprises the green-emitting phosphor powder in the outermost of blue led chips 6.And formation does not contain red-emitting phosphors and does not contain green-emitting phosphor yet between green light conversion layer 10a and photic zone 9b, perhaps their content photic zone 9a seldom.
According to this manufacture method, because can make the thin-type light emitting diode lamp of the 3rd execution mode, so can cut down manufacturing cost by simple operation.
And, in the manufacture method of the 3rd execution mode, as shown in figure 15, also can replace and inject translucent synthetic resin 10 ', and sneak into the translucent synthetic resin of green-emitting phosphor powder to the lateral surface coating of photic zone 9b.In the case, behind this translucent synthetic resin of coating, implement cured immediately.According to this operation, as shown in figure 17, can be more simply form green light conversion layer 10a in the outermost of blue led chips 6.
And, in each execution mode, also can replace the pair of lead wires terminal 4,5 that is embedded in the lamp main body 1, and constitute with the electrode film of the inner face of the top end face 1a that is arranged on the lamp main body and grooved recess 3.
Claims (7)
1. thin-type light emitting diode lamp, it comprises:
Be provided with the lamp main body of grooved recess with elongated oblong openings portion at top end face;
The blue led chips that is provided with in the approximate centre portion of the inner bottom surface of the described recess of this lamp main body; With
In translucent synthetic resin, sneak into the red-emitting phosphors powder and the red light conversion layer that forms and in translucent synthetic resin, sneak into the green-emitting phosphor powder and the green light conversion layer that forms with what the mode that covers described blue led chips was provided with, the blue light excitation back emission red light that this red-emitting phosphors powder is launched by described blue led chips, this green-emitting phosphor powder is by described blue light excitation back transmitting green light
This thin-type light emitting diode lamp is characterised in that:
The content that is provided with any or they that do not contain in described red-emitting phosphors and the green-emitting phosphor between described red light conversion layer and described green light conversion layer is less than the photic zone of described red light conversion layer, described green light conversion layer.
2. thin-type light emitting diode lamp as claimed in claim 1 is characterized in that:
Described photic zone is the space.
3. thin-type light emitting diode lamp as claimed in claim 1 is characterized in that:
Described photic zone is a translucent synthetic resin.
4. as each described thin-type light emitting diode lamp in the claim 1～3, it is characterized in that:
In described red light conversion layer, make the thickness of the part that two sides of the length direction that is orthogonal to described recess in the side with described blue led chips join, than with the side of described blue led chips in the thickness of two sides of extending of the length direction at the described recess part of joining thicker.
5. the manufacture method of a thin-type light emitting diode lamp comprises:
First operation of blue led chips is installed in the approximate centre portion of the inner bottom surface of the grooved recess of the top end face that is arranged on the lamp main body;
To cover the mode of described blue led chips, be formed on second operation of the red light conversion layer of sneaking into the red-emitting phosphors powder in the translucent synthetic resin and forming, wherein, this red-emitting phosphors powder blue light excitation back emission red light of being launched by described blue led chips; With
In the outside of described red light conversion layer, be formed on the 3rd operation of the green light conversion layer of sneaking into the green-emitting phosphor powder in the translucent synthetic resin and forming, wherein, this green-emitting phosphor powder is encouraged back transmitting green light by described blue light,
The manufacture method of this thin-type light emitting diode lamp is characterised in that:
Described second operation is made of following operation:
The translucent synthetic resin of sneaking into the red-emitting phosphors powder is in advance injected operation in the described recess with liquid condition;
The peristome that keeps described recess is the operation that is positioned at the posture of upside; With
Under the state that keeps this posture, the translucent synthetic resin of described liquid is implemented the operation of cured.
6. the manufacture method of a thin-type light emitting diode lamp comprises:
To cover the mode of blue led chips, be formed on first operation of the red light conversion layer of sneaking into the red-emitting phosphors powder in the translucent synthetic resin and forming, wherein, this red-emitting phosphors powder blue light excitation back emission red light of being launched by described blue led chips;
Second operation of described blue led chips is installed in the approximate centre portion of the inner bottom surface of the grooved recess of the top end face that is arranged on the lamp main body; With
In the outside of described red light conversion layer, be formed on the 3rd operation of the green light conversion layer of sneaking into the green-emitting phosphor powder in the translucent synthetic resin and forming, wherein, this green-emitting phosphor powder is encouraged back transmitting green light by described blue light,
The manufacture method of this thin-type light emitting diode lamp is characterised in that:
Described first operation is, make the thickness of the described red light conversion layer of the part that two sides of the length direction that is orthogonal to described recess in the side with described blue led chips join, than with the side of described blue led chips in the thicker operation of thickness of described red light conversion layer of two sides of extending of the length direction at the described grooved recess part of joining.
7. as the manufacture method of claim 5 or 6 described thin-type light emitting diode lamps, it is characterized in that:
Described the 3rd operation is made of following operation:
To sneak into the translucent synthetic resin of green-emitting phosphor powder in advance with the operation in the liquid condition injection grooved recess;
The peristome that keeps described grooved recess is the operation that is positioned at the posture of downside; With
Under the state that keeps this posture, the translucent synthetic resin of described liquid is implemented the operation of cured.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006000210A JP4943005B2 (en) | 2006-01-04 | 2006-01-04 | Thin light emitting diode lamp and manufacturing method thereof |
| JP000256/2006 | 2006-01-04 | ||
| JP000210/2006 | 2006-01-04 | ||
| JP2006000256A JP5013713B2 (en) | 2006-01-04 | 2006-01-04 | Light emitting device and manufacturing method thereof |
| PCT/JP2006/326047 WO2007077869A1 (en) | 2006-01-04 | 2006-12-27 | Thin-type light emitting diode lamp, and its manufacturing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101356656A true CN101356656A (en) | 2009-01-28 |
| CN101356656B CN101356656B (en) | 2011-01-26 |
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| JP (1) | JP4943005B2 (en) |
| CN (1) | CN101356656B (en) |
Cited By (4)
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| CN102299245A (en) * | 2010-06-22 | 2011-12-28 | 日东电工株式会社 | Composite film and semiconductor light emitting device using the same |
| CN102623607A (en) * | 2011-01-28 | 2012-08-01 | 联胜（中国）科技有限公司 | Luminescent module |
| CN105137651A (en) * | 2015-06-30 | 2015-12-09 | 武汉华星光电技术有限公司 | Backlight module group and LCD |
| CN109075234A (en) * | 2016-02-02 | 2018-12-21 | 西铁城电子株式会社 | Light emitting device and its manufacturing method |
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| JP5284006B2 (en) * | 2008-08-25 | 2013-09-11 | シチズン電子株式会社 | Light emitting device |
| JP6191453B2 (en) | 2013-12-27 | 2017-09-06 | 日亜化学工業株式会社 | Light emitting device |
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|---|---|---|---|---|
| DE29724543U1 (en) * | 1996-06-26 | 2002-02-28 | OSRAM Opto Semiconductors GmbH & Co. oHG, 93049 Regensburg | Light-emitting semiconductor component with luminescence conversion element |
| JP3407608B2 (en) * | 1997-07-28 | 2003-05-19 | 日亜化学工業株式会社 | Light emitting diode and method for forming the same |
| JP4625997B2 (en) * | 1999-07-22 | 2011-02-02 | 日亜化学工業株式会社 | Light emitting diode |
| JP4606000B2 (en) * | 2003-07-17 | 2011-01-05 | 三洋電機株式会社 | Light emitting diode and manufacturing method thereof |
| JP4451178B2 (en) * | 2004-03-25 | 2010-04-14 | スタンレー電気株式会社 | Light emitting device |
| JP4229447B2 (en) * | 2004-03-31 | 2009-02-25 | スタンレー電気株式会社 | Semiconductor light emitting device and manufacturing method |
| JP2005317820A (en) * | 2004-04-30 | 2005-11-10 | Korai Kagi Kofun Yugenkoshi | Light emitting diode package structure |
-
2006
- 2006-01-04 JP JP2006000210A patent/JP4943005B2/en not_active Expired - Fee Related
- 2006-12-27 CN CN200680050472.1A patent/CN101356656B/en not_active Expired - Fee Related
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102299245A (en) * | 2010-06-22 | 2011-12-28 | 日东电工株式会社 | Composite film and semiconductor light emitting device using the same |
| CN102299245B (en) * | 2010-06-22 | 2016-03-16 | 日东电工株式会社 | The light emitting semiconductor device of composite membrane and this composite membrane of use |
| CN102623607A (en) * | 2011-01-28 | 2012-08-01 | 联胜（中国）科技有限公司 | Luminescent module |
| CN105137651A (en) * | 2015-06-30 | 2015-12-09 | 武汉华星光电技术有限公司 | Backlight module group and LCD |
| WO2017000323A1 (en) * | 2015-06-30 | 2017-01-05 | 武汉华星光电技术有限公司 | Backlight module and liquid crystal display |
| CN105137651B (en) * | 2015-06-30 | 2017-12-05 | 武汉华星光电技术有限公司 | Backlight module and liquid crystal display |
| CN109075234A (en) * | 2016-02-02 | 2018-12-21 | 西铁城电子株式会社 | Light emitting device and its manufacturing method |
| CN109075234B (en) * | 2016-02-02 | 2021-04-27 | 西铁城电子株式会社 | Light emitting device and method for manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2007184326A (en) | 2007-07-19 |
| CN101356656B (en) | 2011-01-26 |
| JP4943005B2 (en) | 2012-05-30 |
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