CN104851957B - Light-emitting diode encapsulation structure - Google Patents
Light-emitting diode encapsulation structure Download PDFInfo
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- CN104851957B CN104851957B CN201510247538.7A CN201510247538A CN104851957B CN 104851957 B CN104851957 B CN 104851957B CN 201510247538 A CN201510247538 A CN 201510247538A CN 104851957 B CN104851957 B CN 104851957B
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- emitting diode
- light
- fence
- encapsulation structure
- light emitting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
Abstract
A kind of light-emitting diode encapsulation structure includes: substrate；First fence, on the surface of the substrate, which is transparent material in surrounding the first configuring area of formation, the material of first fence on the substrate；An at least light emitting diode is set in first configuring area；And one first lens, first fence, the light emitting diode and first encapsulating material are enveloped, contains the first fluorescent material in the lens.
Description
The application be the applying date be on October 27th, 2010, application No. is 201010532037.0, entitled " shine
The divisional application of the application for a patent for invention of diode package structure ".
Technical field
The present invention relates to a kind of encapsulating structure, in particular to a kind of luminescence component does not contact the encapsulation type of fluorescent material directly
The light-emitting diode encapsulation structure of state.
Background technique
Light emitting diode (light emitting diode, LED) is excellent since its power consumption is low, high-efficient and service life is long
Point, therefore can be widely used for various application fields, such as notebook computer, monitor, mobile phone, TV and liquid crystal display
The light source of backlight module used in device.Furthermore as more and more research staff put into the research and development of light emitting diode (LED),
So that the luminous intensity of current light emitting diode has reached the degree of illumination.
By taking currently most used white light emitting diode as an example, be using light three primary colors light modulation combination, will issue it is red,
Three kinds of light-emitting diode chip for backlight unit of green and blue coloured light are encapsulated with the merging of array manner group, and shining three kinds of different colours
The coloured light that diode is issued is mixed, that is, obtains the multiple grain encapsulation device of light emitting diode of capable of emitting white light.
Existing encapsulation device of light emitting diode is directly to envelope light emitting diode with the packaging body added with fluorescent powder
Chip, i.e. light emitting diode directly contact combination with the fluorescent powder to refracted light.Above-mentioned existing way, being will be glimmering
Light powder uniformly mixes to the packaging body of resin material (referred to as even spread mode (uniform distribution)),
Type coating method (is referred to as either applied into the position of the Mixed Zone of fluorescent powder close to light-emitting diode chip for backlight unit
(conformal distribution)), it is all the light color uniformity out in order to improve light emitting diode.
In this way, generated high thermal energy will be transferred directly to encapsulating material when light-emitting diode chip for backlight unit running,
And fluorescent powder causes the change of its characteristic because heated, and then the Integral luminous efficiency of encapsulation device of light emitting diode is caused to drop
It is low.Also, in the encapsulation technology of existing light emitting diode, it is difficult to reach the spatial spectral distribution and illumination of illuminating ray
The consistency of brightness.
Since the luminous efficiency of current existing light emitting diode (LED) is still too low, and manufacturing cost is also relatively expensive, right
For the R&D personnel of related fields, most important research and development project is substantially to mention the luminous efficiency of light emitting diode
It rises, and reduces the manufacturing cost of light emitting diode, such light emitting diode is in being able to have advantage competition power in the future.
Encapsulation technology is to influence one of the most important link of efficiency of light emitting diode, in order to improve the face of light emitting diode
Color uniformity and reach the characteristics such as high output lumen (luminous flux), existing fluorescent powder coating mode be unable to satisfy now for
The requirement of light emitting diode.Therefore, Sui You manufacturer develops special different from existing fluorescent powder coating technology, such as the U.S.
Sharp 6th, 576, No. 488 contained technology of Patent Case, light emitting diode deposit fluorescence coating by electrophoresis coating technology to be formed
In on electrically-conductive backing plate/non-conductive substrate (chip)；Either, a fluorescence coated sheets are attached directly on chip, are increased with reaching
It sets out the luminous efficacy purpose of optical diode.
But electrophoresis coating technology disclosed by 6,576, No. 488 Patent Cases, manufacturing cost is fairly expensive, therefore can not
The cost for reducing light emitting diode, so that it is excellent not have price on the market with the light emitting diode that this way is fabricated
Gesture.In addition, being attached at the way on chip with fluorescence coated sheets, in addition fluorescence coated sheets must manufacture, and lead to melting process
It is complicated, and the step of attaching fluorescence coated sheets must be quite accurate, yield is not easy to control, opposite to cause the upper of manufacturing cost
It rises.
At present Ye You manufacturer with silica-gel lens (silicone lens) as the encapsulating material of light emitting diode, by
To increase the refractive index of light emitting diode, and then improve the luminous efficacy of light emitting diode.Silica-gel lens are high saturating in addition to having
The advantages of photosensitiveness and high refractive index, it is special more to have both the excellent materials such as standby high temperature tolerance, high-insulativity and high chemical stability
Property, therefore be quite suitable on High Power LED.It is generated when running that silica-gel lens can bear light emitting diode
High temperature improves the problem of existing encapsulating material causes material degradation because of high temperature, greatly improves the reliability of light emitting diode.
Summary of the invention
In view of the above problems, technical problem to be solved by the present invention lies in provide a kind of LED package knot
Structure, use improve the encapsulating material added with fluorescent powder of existing encapsulation device of light emitting diode directly with light-emitting diodes tube core
Piece is in contact, and then leads to that luminous efficacy is not significant and brightness of illumination is uneven, and improves existing LED package dress
The processing step set is complicated, leads to problems such as its manufacturing cost excessively high.
To achieve the goals above, disclosed herein the light-emitting diode encapsulation structure of an embodiment, include a base
Plate, one first fence, at least a light emitting diode, one first encapsulating material, one second fence and one second encapsulating material.Its
In, the first fence is set on the surface of substrate, and forms one first configuring area in surrounding on substrate, and the material of the first fence is
Transparent material.Light emitting diode is set in the first configuring area, and capable of emitting illuminating ray.First encapsulating material is set to
In one configuring area, and light emitting diode is covered, the material of the first encapsulating material is transparent material.Second fence is set to base
On the surface of plate, and in being located at outside the first fence, one second configuring area is formed between the second fence and the first fence, second encloses
The material on column is transparent material.Fluorescent material is added in second encapsulating material, the second encapsulating material is set to the second configuring area
In domain, and cover the first fence, light emitting diode and the first encapsulating material.
To achieve the goals above, the present invention also discloses the light-emitting diode encapsulation structure of another embodiment, includes one
Substrate, a fence, at least a light emitting diode, one first encapsulating material and one second encapsulating material.Wherein, fence is set to base
On the surface of plate, and a configuring area is formed in surrounding on substrate, the material of fence is transparent material.Light emitting diode is set to
In configuring area, and capable of emitting illuminating ray.First encapsulating material is set in configuring area, and covers light-emitting diodes
Pipe, the material of the first encapsulating material are transparent material.Fluorescent material, the setting of the second encapsulating material are added in second encapsulating material
In in the second configuring area, and cover fence, light emitting diode and the first encapsulating material.
Effect of the invention is, by the way that light emitting diode and the encapsulating material with fluorescent material to be located remotely from each other
(remote phosphor) and the setting relationship being not directly contacted with so that light emitting diode and the fluorescent material of reflection light it
Between have a certain distance, thus improve the Integral luminous efficiency of light-emitting diode encapsulation structure and the uniformity of reflection light.
Light emitting diode due to fluorescent material far from fever source, that is to say, that fluorescent material and light emitting diode are simultaneously
It is not directly contacted with, therefore the reliability (reliability) of light-emitting diode encapsulation structure can be improved, be suitable for multiple luminous two
The encapsulating structure of pole pipe, while being able to that manufacturing cost is greatly reduced.
Below in conjunction with the drawings and specific embodiments, the present invention will be described in detail, but not as a limitation of the invention.
Detailed description of the invention
Fig. 1 is the sectional side view of first embodiment of the invention；
Fig. 2 is the sectional side view of the different aspects of first embodiment of the invention；
Fig. 3 is the sectional side view of the different aspects of first embodiment of the invention；
Fig. 4 is the sectional side view of second embodiment of the invention；
Fig. 5 is the sectional side view of the different aspects of second embodiment of the invention；
Fig. 6 is the sectional side view of the different aspects of second embodiment of the invention.
Wherein, appended drawing reference
First embodiment
100 light-emitting diode encapsulation structure
110 substrates
120 first fences
121 first configuring areas
130 light emitting diodes
140 first encapsulating materials
150 second fences
151 second configuring areas
160 second encapsulating materials
161 first fluorescent materials
170 lens
171 second fluorescent materials
Second embodiment
300 light-emitting diode encapsulation structure
310 substrates
320 fences
321 configuring areas
330 light emitting diodes
340 first encapsulating materials
350 second encapsulating materials
351 first fluorescent materials
360 lens
361 second fluorescent materials
Specific embodiment
Structural principle and working principle of the invention are described in detail with reference to the accompanying drawing:
Fig. 1 is the sectional side view of first embodiment of the invention.As shown, the light-emitting diodes of first embodiment of the invention
Pipe encapsulating structure 100 includes a substrate 110, one first fence (enclosure) 120, at least one light emitting diode (light
Emitting diode, LED) 130, one first encapsulating material 140, one second fence 150 and one second encapsulating material 160.Base
The material of plate 110 can be selected from the one of which that metal material, ceramic material, diamond material, class bore carbon material or printed circuit board
Material, but be not limited thereto.
First fence 120 is set on the top surface of substrate 110, and is matched in surrounding formation one first on the surface of substrate 110
Set region 121.It is worth noting that, outline is in mutually orthogonal relationship between the first fence 120 of the invention and substrate 110,
The material of first fence 120 is transparent material (transparent material), and 120 institute of the first fence of the present embodiment
The shape of the first configuring area 121 constituted is the kenels such as rectangle, circle or ellipse, right those skilled in the art, can be according to
Factually border use demand and the first configuring area 121 is designed as various geometries, be not with above-mentioned revealed shape
Limit.
In addition, the first fence 120 may be designed as being set on substrate 110 with a tilt angle, or first is enclosed
Column 120 is designed like trapezoidal structure, and purpose is all the optimization in order to reach light reflection.Therefore, art technology
Personnel, can according to actual use demand and by the first fence 120 of the present invention it is more derivative be designed as various geometries and
The form of different placement angles, not with disclosed herein each embodiment be limited.
As shown in Figure 1, light emitting diode 130 is set in the first configuring area 121, i.e., light emitting diode 130 is to be located at
The inside of first fence 120.Light emitting diode 130 is electrically connected to a voltage, and light emitting diode 130 passes through this voltage
Driving and issue illuminating ray.The configuration quantity of the light emitting diode 130 of the present embodiment can be right according to actual use demand
Its quantity should be increased and decreased, be not limited with the quantity of a light emitting diode of the present embodiment.
The light color that the light emitting diode 130 of the present embodiment is issued can be cool white light, warm white, imitative daylight white light etc.
It is various photochromic, and this illuminating ray has the characteristic of high color color rendering, and illuminating ray of the invention passes through the first fence
120 and have the total reflection effect of vertical reflection and horizontal reflection, avoid illuminating ray from generating excessive light in refracting process
Loss.
Please continue to refer to Fig. 1, the first encapsulating material 140 is filled in the first configuring area 121, and is covered all luminous
Diode 130.The material of first encapsulating material 140 is transparent material, such as epoxy resin (epoxy) or silica gel
(silicone) high molecular materials such as, but be not limited thereto.In addition, mold technique can be used into the first encapsulating material 140
The mode of (molding process) is set in the first configuring area 121, but is not limited thereto.
Second fence 150 is set on the top surface of substrate 110, and the second fence 150 is located at outside the first fence 120 and is spaced
There is a distance, thus forms one second between the second fence 150 and the first fence 120 (that is, on the surface of substrate 110) and match
Set region 151.It is worth noting that, outline is in mutually orthogonal relationship between the second fence 150 of the invention and substrate 110,
The material of second fence 150 is transparent material (transparent material), and 150 institute of the second fence of the present embodiment
The shape of the second configuring area 151 constituted is the kenels such as rectangle, circle or ellipse, right those skilled in the art, can be according to
Factually border use demand and the second configuring area 151 is designed as various geometries, be not with above-mentioned revealed shape
Limit.
In addition, the second fence 150 may be designed as being set on substrate 110 with a tilt angle, or second is enclosed
Column 150 is designed like trapezoidal structure, and purpose is all the optimization in order to reach light reflection.Therefore, art technology
Personnel, can according to actual use demand and by the second fence 150 of the present invention it is more derivative be designed as various geometries and
The form of different placement angles, not with disclosed herein each embodiment be limited.
As shown in Figure 1, being added with the first fluorescent material 161 of powder kenel in the second encapsulating material 160, and the second encapsulation
Material 160 is filled in the second configuring area 151, and covers all the first fence 120, light emitting diode 130 and the first envelope
Package material 140, to constitute complete light-emitting diode encapsulation structure 100.Wherein, the material of the second encapsulating material 160 is transparent
Material, such as the high molecular materials such as epoxy resin (epoxy) or silica gel (silicone), but be not limited thereto.
First fluorescent material 161 added by second encapsulating material 160 is selected from Sr1-x-yBaxCaySiO4:Eu2+F、
(Sr1-x-yEuxMny)P2+zO7:Eu2+F、(Ba,Sr,Ca)Al2O4:Eu、((Ba,Sr,Ca)(Mg,Zn))Si2O7:Eu、SrGa2S4:
Eu、((Ba,Sr,Ca)1-xEux)(Mg,Zn)1-xMnx))Al10O17、Ca8Mg(SiO4)4Cl2:Eu,Mn、((Ba,Sr,Ca,Mg)1- xEux)2SiO4、Ca2MgSi2O7:Cl、SrSi3O8˙2SrCl2:Eu、BAM:Eu、Sr-Aluminate:Eu、Thiogallate:
Eu、Chlorosilicate:Eu、Borate:Ce,Tb、Sr4Al14O25:Eu、YBO3:Ce,Tb、BaMgAl10O17:Eu,Mn、
(Sr,Ca,Ba)(Al,Ga)2S4:Eu、Ca2MgSi2O7:Cl,Eu,Mn、(Sr,Ca,Ba,Mg)10(PO4)6Cl2:Eu ZnS:Cu,
Al、(Y,Gd,Tb,Lu,Yb)(AlyGa1-y)5O12:Ce、(Sr1-x-y-zBaxCayEuz)2SiO4And (Sr1-a-bCabBac)SixNyOz:
Eua Sr5(PO4)3Cl:EuaOne of or it is above-mentioned composed by mixed materials, but the material selection of the first fluorescent material 161
It is not limited thereto, and the kenel of the first fluorescent material 161 is not also limited with powder disclosed by the present embodiment, art technology
Personnel can be corresponded to according to actual fabrication demand and be added in the second encapsulating material 160 using various kenels, such as pasted with colloid
It is overlying on the top surface of the second encapsulating material 160.When the second encapsulating material 160 is crossed in illuminating ray break-through, it is mixed in the second encapsulation
The first fluorescent material 161 in material 160 provides the be more good reflecting effect of illuminating ray.
Refering to Figure 1, since the height dimension of the second fence 150 is substantially greater than the height gauge of the first fence 120
It is very little, therefore when the second encapsulating material 160 is loaded to the second configuring area 151, and the second encapsulating material 160 and the second fence
150 etc. it is high when, the second encapsulating material 160 can cover the first fence 120, light emitting diode 130 and the first encapsulating material completely
140。
Fig. 2 and Fig. 3 is the sectional side view of the different aspects of first embodiment of the invention, implementation disclosed by Fig. 2 and Fig. 3
Aspect is roughly the same with the example structure of Fig. 1, and difference only just between the two is illustrated below.
As shown in Fig. 2, light-emitting diode encapsulation structure 100 of the invention is in addition to including substrate 110, the first fence 120, hair
Except optical diode 130, the first encapsulating material 140, the second fence 150 and the second encapsulating material 160, may also include has a lens
170.Wherein, lens 170 envelope the second fence 150 and the second encapsulating material 160, and the material of lens 170 is transparent material
Material, such as high molecular material or glass material, but be not limited thereto, therefore illumination light emitted by light emitting diode 130
In line reflection to the wall surface of lens 170, lens 170 provide be more good reflection light and are used.
In addition, as shown in figure 3, can more add the second fluorescent material 171 of powder kenel in lens 170 of the invention, by
To increase the reflecting effect of lens 170.Second fluorescent material 171 added by lens 170 is selected from Sr1-x-yBaxCaySiO4:
Eu2+F、(Sr1-x-yEuxMny)P2+zO7:Eu2+F、(Ba,Sr,Ca)Al2O4:Eu、((Ba,Sr,Ca)(Mg,Zn))Si2O7:Eu、
SrGa2S4:Eu、((Ba,Sr,Ca)1-xEux)(Mg,Zn)1-xMnx))Al10O17、Ca8Mg(SiO4)4Cl2:Eu,Mn、((Ba,Sr,
Ca,Mg)1-xEux)2SiO4、Ca2MgSi2O7:Cl、SrSi3O8˙2SrCl2:Eu、BAM:Eu、Sr-Aluminate:Eu、
Thiogallate:Eu、Chlorosilicate:Eu、Borate:Ce,Tb、Sr4Al14O25:Eu、YBO3:Ce,Tb、
BaMgAl10O17:Eu,Mn、(Sr,Ca,Ba)(Al,Ga)2S4:Eu、Ca2MgSi2O7:Cl,Eu,Mn、(Sr,Ca,Ba,Mg)10
(PO4)6Cl2:Eu ZnS:Cu,Al、(Y,Gd,Tb,Lu,Yb)(AlyGa1-y)5O12:Ce、(Sr1-x-y-zBaxCayEuz)2SiO4And
(Sr1-a-bCabBac)SixNyOz:Eua Sr5(PO4)3Cl:EuaOne of or it is above-mentioned composed by mixed materials, but second
The material selection of fluorescent material 171 is not limited thereto, and the kenel of the second fluorescent material 171 is not also disclosed by the present embodiment
Powder be limited, those skilled in the art can correspond to according to actual fabrication demand and be added to lens 170 using various kenels
It is interior, such as it is covered on colloid the surface of lens 170.When lens 170 are crossed in illuminating ray break-through, it is mixed in lens 170
Second fluorescent material 171 provides the be more good reflecting effect of illuminating ray.
Fig. 4 is the sectional side view of second embodiment of the invention.As shown, the light-emitting diodes of second embodiment of the invention
Pipe encapsulating structure 300 includes a substrate 310, a fence (enclosure) 320, at least one light emitting diode (light
Emitting diode, LED) 330, one first encapsulating material 340 and one second encapsulating material 350.The material of substrate 310 can
One of material of carbon material or printed circuit board is bored selected from metal material, ceramic material, diamond material, class, but not with
This is limited.
Fence 320 is set on the top surface of substrate 310, and forms a configuring area in surrounding on the surface of substrate 310
321.It is worth noting that, outline is in mutually orthogonal relationship, the material of fence 320 between fence 320 and substrate 310 of the invention
Matter is transparent material (transparent material), and the configuring area 321 that is constituted of the fence 320 of the present embodiment
Shape is the kenels such as rectangle, circle or ellipse, and right those skilled in the art can will configure according to actual use demand
Region 321 is designed as various geometries, is not limited with above-mentioned revealed shape.
In addition, fence 320 may be designed as being set on substrate 310 with a tilt angle, or fence 320 is designed
For similar trapezoidal structure, purpose is all the optimization in order to reach light reflection.Therefore, those skilled in the art, can be according to
Factually border use demand and by more derivative various geometries and the different placement angle of being designed as of fence 320 of the present invention
Form, not with disclosed herein each embodiment be limited.
As shown in figure 4, light emitting diode 330 is set in configuring area 321, i.e., light emitting diode 330 is to be located at fence
320 inside.Light emitting diode 330 is electrically connected to a voltage, and light emitting diode 330 passes through the driving of this voltage
Issue illuminating ray.The configuration quantity of the light emitting diode 330 of the present embodiment can be corresponded to according to actual use demand increases and decreases it
Quantity is not limited with the quantity of a light emitting diode of the present embodiment.
The light color that the light emitting diode 330 of the present embodiment is issued can be cool white light, warm white, imitative daylight white light etc.
It is various photochromic, and this illuminating ray has the characteristic of high color color rendering, and illuminating ray of the invention passes through fence 320
Have the total reflection effect of vertical reflection and horizontal reflection, illuminating ray is avoided to generate excessive light loss in refracting process.
Please continue to refer to Fig. 4, the first encapsulating material 340 is filled in configuring area 321, and covers all light-emitting diodes
Pipe 330.The material of first encapsulating material 340 is transparent material, such as epoxy resin (epoxy) or silica gel (silicone) etc.
High molecular material, but be not limited thereto.In addition, mold technique (molding process) can be used into the first encapsulating material 340
Mode be set in configuring area 321, but be not limited thereto.
The first fluorescent material 351 of powder kenel is added in second encapsulating material 350, and the second encapsulating material 350 is
Fence 320, light emitting diode 330 and the first encapsulating material 340 are covered all, to constitute complete LED package knot
Structure 300.Wherein, the material of the second encapsulating material 350 is transparent material, such as epoxy resin (epoxy) or silica gel
(silicone) high molecular materials such as, but be not limited thereto.
First fluorescent material 351 added by second encapsulating material 350 is selected from Sr1-x-yBaxCaySiO4:Eu2+F、
(Sr1-x-yEuxMny)P2+zO7:Eu2+F、(Ba,Sr,Ca)Al2O4:Eu、((Ba,Sr,Ca)(Mg,Zn))Si2O7:Eu、SrGa2S4:
Eu、((Ba,Sr,Ca)1-xEux)(Mg,Zn)1-xMnx))Al10O17、Ca8Mg(SiO4)4Cl2:Eu,Mn、((Ba,Sr,Ca,Mg)1- xEux)2SiO4、Ca2MgSi2O7:Cl、SrSi3O8˙2SrCl2:Eu、BAM:Eu、Sr-Aluminate:Eu、Thiogallate:
Eu、Chlorosilicate:Eu、Borate:Ce,Tb、Sr4Al14O25:Eu、YBO3:Ce,Tb、BaMgAl10O17:Eu,Mn、
(Sr,Ca,Ba)(Al,Ga)2S4:Eu、Ca2MgSi2O7:Cl,Eu,Mn、(Sr,Ca,Ba,Mg)10(PO4)6Cl2:Eu ZnS:Cu,
Al、(Y,Gd,Tb,Lu,Yb)(AlyGa1-y)5O12:Ce、(Sr1-x-y-zBaxCayEuz)2SiO4And (Sr1-a-bCabBac)SixNyOz:
Eua Sr5(PO4)3Cl:EuaOne of or it is above-mentioned composed by mixed materials, but the material selection of the first fluorescent material 351
It is not limited thereto, and the kenel of the first fluorescent material 351 is not also limited with powder disclosed by the present embodiment, art technology
Personnel can be corresponded to according to actual fabrication demand and be added in the second encapsulating material 350 using various kenels, such as pasted with colloid
It is overlying on the top surface of the second encapsulating material 350.When the second encapsulating material 350 is crossed in illuminating ray break-through, it is mixed in the second encapsulation
The first fluorescent material 351 in material 350 provides the be more good reflecting effect of illuminating ray.
Fig. 5 and Fig. 6 is the sectional side view of the different aspects of second embodiment of the invention, implementation disclosed by Fig. 5 and Fig. 6
Aspect is roughly the same with the example structure of Fig. 4, and difference only just between the two is illustrated below.
As shown in figure 5, light-emitting diode encapsulation structure 300 of the invention is in addition to including substrate 310, fence 320, luminous two
Except pole pipe 330, the first encapsulating material 340 and the second encapsulating material 350, may also include has a lens 360.Wherein, lens 360
Envelope the second encapsulating material 350, and the material of lens 360 is transparent material, such as high molecular material or glass material,
But it is not limited thereto, therefore illuminating ray emitted by light emitting diode 330 reflexes on the wall surface of lens 360, lens 360
Be more good reflection light is provided to be used.
In addition, as shown in fig. 6, can also add the second fluorescent material 361 of powder kenel in lens 360 of the invention, by
To increase the reflecting effect of lens 360.Second fluorescent material 361 added by lens 360 is selected from Sr1-x-yBaxCaySiO4:
Eu2+F、(Sr1-x-yEuxMny)P2+zO7:Eu2+F、(Ba,Sr,Ca)Al2O4:Eu、((Ba,Sr,Ca)(Mg,Zn))Si2O7:Eu、
SrGa2S4:Eu、((Ba,Sr,Ca)1-xEux)(Mg,Zn)1-xMnx))Al10O17、Ca8Mg(SiO4)4Cl2:Eu,Mn、((Ba,Sr,
Ca,Mg)1-xEux)2SiO4、Ca2MgSi2O7:Cl、SrSi3O8˙2SrCl2:Eu、BAM:Eu、Sr-Aluminate:Eu、
Thiogallate:Eu、Chlorosilicate:Eu、Borate:Ce,Tb、Sr4Al14O25:Eu、YBO3:Ce,Tb、
BaMgAl10O17:Eu,Mn、(Sr,Ca,Ba)(Al,Ga)2S4:Eu、Ca2MgSi2O7:Cl,Eu,Mn、(Sr,Ca,Ba,Mg)10
(PO4)6Cl2:Eu ZnS:Cu,Al、(Y,Gd,Tb,Lu,Yb)(AlyGa1-y)5O12:Ce、(Sr1-x-y-zBaxCayEuz)2SiO4And
(Sr1-a-bCabBac)SixNyOz:Eua Sr5(PO4)3Cl:EuaOne of or it is above-mentioned composed by mixed materials, but second
The material selection of fluorescent material 361 is not limited thereto, and the kenel of the second fluorescent material 361 is not also disclosed by the present embodiment
Powder be limited, those skilled in the art can correspond to according to actual fabrication demand and be added to lens 360 using various kenels
It is interior, such as it is covered on colloid the surface of lens 360.When lens 360 are crossed in illuminating ray break-through, it is mixed in lens 360
Second fluorescent material 361 provides the be more good reflecting effect of illuminating ray.
The setting side being not directly contacted with and being located remotely from each other light emitting diode with the encapsulating material with fluorescent material
Formula (remote phosphor), so that having certain spacing, Jin Erke between light emitting diode and the fluorescent material of reflection light
Improve the Integral luminous efficiency of light-emitting diode encapsulation structure and the light reflectance uniformity of light-emitting diode encapsulation structure.
Also, encapsulating structure of the invention can be applicable in vertical light-emitting formula and horizontal illuminated light emitting diode kenel simultaneously.
Light emitting diode due to fluorescent material far from fever source, that is to say, that fluorescent material and light emitting diode are simultaneously
Do not contact directly, be quite suitable for the encapsulating structure of multiple light emitting diodes, and can be improved light-emitting diode encapsulation structure can
By degree (reliability), the manufacturing cost of light emitting diode can also be greatly reduced.
In addition, the also settable lens of light-emitting diode encapsulation structure of the invention in outside the second encapsulating material, use into
The Integral luminous efficiency of one step promotion light-emitting diode encapsulation structure.
Certainly, the present invention can also have other various embodiments, without deviating from the spirit and substance of the present invention, ripe
It knows those skilled in the art and makes various corresponding changes and modifications, but these corresponding changes and change in accordance with the present invention
Shape all should fall within the scope of protection of the appended claims of the present invention.
Claims (10)
1. a kind of light-emitting diode encapsulation structure, which is characterized in that include:
Substrate；
First fence, on the surface of the substrate, which forms the first configuring area in encirclement on the substrate, so that
Light has total reflection by first fence；
An at least light emitting diode is set in first configuring area；
First encapsulating material is filled in first configuring area, which does not include any fluorescent material and cover
The light emitting diode is covered, first encapsulating material is only loaded between first fence and the light emitting diode, first fence
Top surface and the top surface of first encapsulating material be located at same surface；And
First lens, envelope first fence, the light emitting diode and first encapsulating material, and it is glimmering to contain first in the lens
Luminescent material,
Wherein, which does not contact directly with first fluorescent material and other fluorescent materials.
2. light-emitting diode encapsulation structure according to claim 1, which is characterized in that the material of first lens is transparent
Material.
3. light-emitting diode encapsulation structure according to claim 1, which is characterized in that first fluorescent material be selected from
Sr1-x-yBaxCaySiO4:Eu2+F、(Sr1-x-yEuxMny)P2+zO7:Eu2+F、(Ba,Sr,Ca)Al2O4:Eu、((Ba,Sr,Ca)
(Mg,Zn))Si2O7:Eu、SrGa2S4:Eu、((Ba,Sr,Ca)1-xEux)(Mg,Zn)1-xMnx))Al10O17、Ca8Mg(SiO4)4Cl2:Eu,Mn、((Ba,Sr,Ca,Mg)1-xEux)2SiO4、Ca2MgSi2O7:Cl、SrSi3O8˙2SrCl2:Eu、BAM:Eu、Sr-
Aluminate:Eu、Thiogallate:Eu、Chlorosilicate:Eu、Borate:Ce,Tb、Sr4Al14O25:Eu、YBO3:
Ce,Tb、BaMgAl10O17:Eu,Mn、(Sr,Ca,Ba)(Al,Ga)2S4:Eu、Ca2MgSi2O7:Cl,Eu,Mn、(Sr,Ca,Ba,
Mg)10(PO4)6Cl2:Eu ZnS:Cu,Al、(Y,Gd,Tb,Lu,Yb)(AlyGa1-y)5O12:Ce、(Sr1-x-y-zBaxCayEuz)2SiO4And (Sr1-a-bCabBac)SixNyOz:Eua Sr5(PO4)3Cl:EuaOne of or it is above-mentioned composed by mixed materials.
4. light-emitting diode encapsulation structure according to claim 1, which is characterized in that also include the second fence, being set to should
On the surface of substrate, which is set to outside first fence, and forms the second configuring area between first fence
The material in domain, second fence is transparent material and the second encapsulating material, is set in second configuring area, and cover
First fence, the light emitting diode and first encapsulating material are covered, wherein second encapsulating material also includes to be different from being somebody's turn to do
Second fluorescent material of the first fluorescent material.
5. light-emitting diode encapsulation structure according to claim 1, which is characterized in that the material of the substrate is selected from metal
Material, ceramic material, diamond material, class bore one of carbon material or printed circuit board.
6. light-emitting diode encapsulation structure according to claim 1, which is characterized in that the material of first encapsulating material is
Epoxy resin or silica gel.
7. light-emitting diode encapsulation structure according to claim 1, which is characterized in that first fence constituted this
The shape of one configuring area is rectangle, circle or ellipse.
8. light-emitting diode encapsulation structure according to claim 4, which is characterized in that second fence constituted this
The shape of two configuring areas is rectangle, circle or ellipse.
9. light-emitting diode encapsulation structure according to claim 1, which is characterized in that include also the second lens, envelope
First lens.
10. light-emitting diode encapsulation structure according to claim 9, which is characterized in that include second in second lens
Fluorescent material.
Priority Applications (1)
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| CN201510247538.7A CN104851957B (en) | 2010-10-27 | 2010-10-27 | Light-emitting diode encapsulation structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010105320370A CN102456819A (en) | 2010-10-27 | 2010-10-27 | LED (Light-Emitting Diode) package structure |
| CN201510247538.7A CN104851957B (en) | 2010-10-27 | 2010-10-27 | Light-emitting diode encapsulation structure |
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| CN103883933A (en) * | 2012-12-22 | 2014-06-25 | 鸿富锦精密工业（深圳）有限公司 | Manufacturing method of backlight module |
| CN103682050A (en) * | 2013-12-27 | 2014-03-26 | 苏州东山精密制造股份有限公司 | LED (Light-Emitting Diode) encapsulating structure and encapsulating method |
| CN106935697B (en) * | 2015-12-30 | 2020-08-14 | 晶元光电股份有限公司 | Light emitting device and method for manufacturing the same |
| KR102605585B1 (en) * | 2016-08-11 | 2023-11-24 | 삼성전자주식회사 | Method of fabricating light emitting device package |
| JP6458793B2 (en) | 2016-11-21 | 2019-01-30 | 日亜化学工業株式会社 | Method for manufacturing light emitting device |
| CN107833947B (en) * | 2017-11-28 | 2020-12-18 | 浙江清华柔性电子技术研究院 | LED packaging method |
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| CN101253637A (en) * | 2005-08-30 | 2008-08-27 | 奥斯兰姆奥普托半导体有限责任公司 | Optoelectronic component |
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| CN104851957A (en) | 2015-08-19 |
| CN102456819A (en) | 2012-05-16 |
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