JP3950898B2 - White semiconductor light emitting device and method for producing the same - Google Patents

Description

  The present invention relates to a light emitting element chip that emits blue light, a white semiconductor light emitting element that emits white light using a light emitting color conversion member that converts blue light into red, green, and the like, and a method for manufacturing the same. More specifically, there is no need to use an extra color conversion member due to the fact that the light converted into green or the like is further converted into red or the like. The present invention relates to a white semiconductor light emitting device and a method for producing the same.

  2. Description of the Related Art Conventionally, for example, a white semiconductor light emitting element using a blue light emitting element chip (LED chip) is covered by attaching a fluorescent layer 34 on an LED chip 33 that emits blue light, as shown in FIG. The periphery is covered with a transparent resin 36 (see, for example, Patent Document 1). In FIG. 5, reference numerals 31 and 32 denote a pair of leads. An LED chip 33 is die-bonded in a recess of one lead 31, and the other electrode is connected to the other lead 32 by a wire 35 to form a lamp-type light emitting element. It is composed. However, in such a white light emitting element, since the red phosphor 34a and the green phosphor 34b are mixed in the phosphor layer 34, when the light converted into green is absorbed by the red phosphor 34a, the red phosphor 34a further becomes red. The ratio of light that is converted and mixed is not constant, and a stable white light-emitting color cannot be obtained. If the fluorescent layer 34 is absorbed many times, the conversion efficiency of the phosphor is not 100%, and thus light is not emitted. There is a problem that the brightness is attenuated and the brightness is lowered.

In order to solve such a problem, for example, as shown in FIG. 6, a red phosphor-containing layer 42, a green phosphor-containing layer 43, and a blue phosphor-containing layer 44 are separately laminated on an ultraviolet light source 41. In addition, a structure in which light that has been converted into green or blue is prevented from being further converted by the red phosphor 42 or the like by arranging them separately in a plane is also known (see, for example, Patent Document 2).
JP 2004-327518 A JP 2004-071357 A

  As described above, in order to obtain a white light emitting element, a phosphor that converts green and red is applied to a blue light emitting LED, or a phosphor that converts red, green, and blue is applied to an LED that emits ultraviolet light. By doing so, a method of generating light of three primary colors of red, green, and blue and mixing them into white light is adopted. In this case, when using a mixture of red and green fluorescent substances, there is a problem that the amount of conversion to each color is not constant and the attenuation of light increases, for example, the light converted to green is converted to red again. . Moreover, even if each fluorescent layer is provided separately, if the fluorescent layer is provided away from the LED, not only the amount of the fluorescent layer increases and the loss increases, but also the reflection between the LED and the fluorescent layer, etc. As a result, the light is attenuated and the external quantum efficiency is lowered.

  The present invention has been made to solve such a problem, and the external quantum efficiency is improved by directly attaching a resin containing a luminescent color conversion member to an LED chip so that the respective luminescent color conversion members are not mixed. It is an object of the present invention to provide a white semiconductor light emitting device that can be made high and a method for manufacturing the same.

  As described above, for example, in order to obtain a white light emitting element by using a light emitting element that emits blue light and a resin containing a light emitting color conversion member, a resin containing a light emitting color conversion member directly around the LED chip is used. It has been found that attaching the respective light emitting color conversion members without mixing them is most preferable for improving the external quantum efficiency, but the size of the LED chip is a very small chip of about 0.3 mm cubic. Therefore, for example, it is very difficult to separately attach a resin including a green color conversion member and a resin including a red color conversion member in a desired amount. Therefore, as a result of extensive studies by the present inventors, a resin mixed with a red color conversion member and a green color conversion member are mixed by attaching a resin mixed with a light emission color conversion member to a transfer pin and transferring it to one side of the light emitting element chip. The amount of resin to be applied can be accurately controlled without mixing the resin mixed with the resin, and by directly controlling the thickness of the transfer pin, both of them can be directly and independently applied to a small light emitting device chip. It has been found that a white semiconductor light emitting device having a very high external quantum efficiency can be obtained.

A white semiconductor light-emitting device according to the present invention includes an insulating substrate having a pair of electrode films formed at both ends, a light-emitting device chip that emits blue light mounted on the insulating substrate, and the light-emitting device chip. A resin in which a connecting means for electrically connecting a pair of electrodes to a pair of electrode films of the insulating substrate and a red conversion member that converts blue light emitted from the light emitting element chip into red is mixed, A first resin layer provided so as to be in close contact with the light emitting element chip so as to cover almost half of the light emitting element chip, and a green conversion member that converts blue light emitted by the light emitting element chip into green are mixed. resin, the light emitting element in close contact with the tip have a second resin layer provided so as to cover the remaining approximately half of the light emitting device chip, at least one of said connecting means, said light-emitting element chips The first and second resin layers are formed of a wire connecting one of the electrodes and one of the pair of electrode films, and a plane perpendicular to the surface of the light emitting element chip in the extending direction of the wire is substantially divided. Is formed . By adopting this structure, it is possible to prevent an accident that the wire is cut by contact with the wire when the first and second resin layers are formed.

In another embodiment of the white semiconductor light emitting device according to the present invention, a first lead in which a curved concave portion is formed at a tip portion, a second lead juxtaposed with the first lead, and the first lead A light emitting element chip for emitting blue light mounted in a recess of a lead; a connection means for electrically connecting a pair of electrodes of the light emitting element chip to the first and second REITs; and the light emitting element chip A first resin layer provided so that a resin mixed with a red conversion member that converts blue light emitted from the red light into red is in close contact with the light emitting element chip and covers almost half of the light emitting element chip; A resin mixed with a green conversion member that converts blue light emitted from the light emitting element chip into green is provided in close contact with the light emitting element chip so as to cover the remaining half of the light emitting element chip. 2 resin layers And, at least one of said connecting means comprises a wire for connecting the light emitting element one electrode and the first or second lead of the chip, perpendicular to the surface of the light emitting device chip in a direction in which the wire extends The first and second resin layers are formed with the surface as a substantially divided surface . Also in this structure, it is possible to prevent an accident that the wire is cut by contact with the wire when the first and second resin layers are formed.

The method of manufacturing a white semiconductor light emitting device according to the present invention is such that a light emitting device chip that emits blue light is formed in a substantially cubic or rectangular parallelepiped shape, and a red conversion member that converts blue light emitted from the light emitting device chip into red is mixed. The transfer pin with the resin attached is brought into contact with one side or one corner of the surface of the light emitting element chip, whereby the resin is transferred so as to cover almost half of the light emitting element chip. One side or one corner of the surface of the light emitting element chip is formed with a transfer pin on which a resin layer is formed and a green conversion member that converts blue light emitted from the light emitting element chip into green is adhered. A white semiconductor that forms a second resin layer by transferring the resin so as to cover almost the other half of the light emitting element chip by contacting the side or the corner facing the substrate A method for producing an optical element, wherein at least one electrode of the light emitting element chip and an electrode film provided on a substrate on which the light emitting element chip is mounted, or a lead provided in the vicinity of the light emitting element chip, The first and second resin layers are formed by connecting wires by bonding, and bringing the transfer pin into contact with the light emitting element chip from both sides sandwiching the surface formed in the direction in which the wire is stretched. It is characterized by that. According to this manufacturing method, the contact of the transfer pin with the wire can be prevented.

  According to the present invention, since the resin containing the light emitting color conversion member is directly attached around the light emitting element chip, the blue light emitted from the light emitting element chip is converted into red and green with a very small amount of light emitting color conversion member. Can be converted to In addition, since the resin containing the red conversion member and the resin containing the green conversion member are provided separated into almost half of the light emitting element chip, the light emission color once converted into green is converted again into red. Therefore, it is possible to convert to a very stable emission color. In addition, although it overlaps partially in the boundary part of both resin, by apply | coating the resin containing a red conversion member previously, the blue light radiated | emitted from a light emitting element chip | tip will be converted into red, and the red light will be changed. Even though the green color conversion member is transmitted, the green color conversion member transmits the light having energy smaller than the band gap energy of the material, that is, light having a wavelength longer than that of the green color without absorbing it. It will not be converted again. As a result, part of the light from the light emitting element chip that emits blue light is converted into red and green, and mixed with blue light that is radiated as it is without being converted to white, and the light emitting color conversion member is minimized. Therefore, a white semiconductor light emitting device having a small color, a very low external quantum efficiency, a stable color, and a glossy color is obtained.

  Further, according to the manufacturing method of the present invention, the transfer pin is directly brought into contact with one side or one corner of the light-emitting element chip by the transfer method, and the resin is applied. Therefore, by controlling the thickness of the transfer pin, The application amount and application location can be controlled very accurately. As a result, a necessary minimum amount of resin can be accurately applied, a useless light absorption loss is reduced, and a white light-emitting element with very high external quantum efficiency can be obtained. Even when there is a wire on the surface of the light emitting element chip, the resin can be applied without bringing the transfer pin into contact with the wire by bringing the transfer pin close to the light emitting element chip from both sides of the wire. The reliability with respect to can also be improved.

  Next, the white semiconductor light emitting device of the present invention will be described with reference to the drawings. In the white semiconductor light emitting device according to the present invention, a pair of electrode films 11 and 12 are formed at both ends as shown in a plan explanatory view in FIG. 1 (f) and a BB cross-sectional explanatory view in FIG. 1 (e). A light-emitting element chip (hereinafter also referred to as an LED chip) 2 that emits blue light is mounted on an insulating substrate 1 that is to be connected, and a pair of electrodes of the LED chip 2 are connected to a pair of electrode films (first 1 and second electrode films) 11 and 12, respectively. In the LED chip 2, a resin mixed with a red conversion member 4 a that converts blue light emitted from the LED chip 2 into red is in close contact with the LED chip 2 and covers only about half of the periphery of the LED chip 2. The resin in which the first resin layer 4 is formed and the green conversion member 5a for converting the blue light emitted from the LED chip 2 into green is mixed with the LED chip 2 and the LED is adhered. A second resin layer 5 is formed so as to cover only the periphery of the remaining half of the chip 2.

  The first resin layer 4 is a mixture of a normal translucent resin such as an epoxy resin or a silicone resin mixed with a red conversion member 4a that absorbs light having a wavelength shorter than red and changes to red. For example, it is formed by applying by a transfer method. The light emitting color conversion member absorbs light having a band gap energy larger than that of the substance, that is, light having a wavelength shorter than the wavelength corresponding to the band gap energy of the substance, and emits light corresponding to the band gap of the substance. Therefore, as the red conversion member 4a, for example, yttrium oxide activated by europium or a composite oxide thereof, a nitride or sulfide phosphor activated by europium, or the like can be used. As described above, in order to absorb light having a wavelength shorter than the wavelength corresponding to the band gap energy of the luminescent color conversion member, in the present invention, the boundary portion is provided in a place different from the second resin layer described later. In this first resin layer 4, a resin mixed with a red conversion member 4 a that converts red, green, and blue, which are the three primary colors of light, into red having the longest wavelength is used. It is applied to the LED chip 2. As a result, even if there is a portion overlapping the second resin layer 5, a part of the blue light emitted from the LED chip 2 is absorbed and converted to red light, and the red light is converted into the second resin layer. 5 so as not to be absorbed.

  Similarly, the second resin layer 5 is formed by mixing the green conversion member 5a with a translucent resin such as an epoxy resin or a silicone resin. As the green color conversion member 5a, for example, an alkaline earth aluminate phosphor activated by divalent manganese and europium, a rare earth silicate phosphor activated by trivalent cerium, or the like can be used. . As will be described later, when the first and second resin layers 4 and 5 are applied by a transfer method, even the very small LED chip 2 can be applied to the LED chip 2 in a very accurate amount. it can.

  The insulating substrate 1 can be the same as the substrate of a normal chip-type light emitting element. For example, the insulating substrate 1 is made of alumina, BT resin, etc., and has a thickness of about 0.1 to 0.5 mm. Can do. The size of the light-emitting element shown in FIG. 1 (f) is such that the length × width × height is about 0.6 to 1 mm × 1.5 to 4 mm × 0.3 to 1 mm. A plurality of substrates are manufactured simultaneously in parallel in the vertical and horizontal directions on a large substrate of about 10 × 5 cm. A plurality of pairs of electrode films 11 and 12 made of Ag, Au, or the like are collectively formed on the surface of this large substrate by printing or the like, and back electrode films 11a and 12a are formed on the back surface of the substrate 1 to each element. The surface electrode films 11 and 12 and the back surface electrodes 11a and 12a are connected to each other by side electrodes 11b and 12b provided on the side surfaces after the division.

  In the example shown in FIG. 1, a blue light emitting LED chip 2 is used. For example, as shown in FIG. 2 as an example of a sectional configuration, the LED chip 2 is formed as an LED using a nitride semiconductor. However, the present invention is not limited to this example, and a zinc oxide (ZnO) compound or the like can also be used. The LED chip 1 is formed in a size of, for example, length × width × height of about 0.3 mm × 0.3 mm × 0.15 mm. Here, the nitride semiconductor means a compound in which a group III element Ga and a group V element N or a part or all of a group III element Ga is substituted with other group III elements such as Al and In, and / or Alternatively, it refers to a semiconductor made of a compound (nitride) in which a part of N of the group V element is substituted with another group V element such as P or As. The zinc oxide-based compound means an oxide containing Zn. Specific examples include ZnO, IIA group element and Zn, IIB group element and Zn, or IIA group element and IIB group element and Zn. It means what contains each oxide.

As shown in FIG. 2, an LED using a nitride semiconductor includes, for example, an AlGaN-based compound (including a case where an Al mixed crystal ratio is 0, including various ones) on an n-type SiC substrate 21. The low temperature buffer layer 22 made of 0.005 to 0.1 [mu] m is provided. Then, an n-type layer 23 formed of, for example, an n-type GaN layer on the buffer layer 22 has a well layer made of In _0.13 Ga _0.87 N of about 1 to 5 μm, for example, about 1 to 3 nm, and GaN of 10 to 20 nm. An active layer 24 having a multi-quantum well (MQW) structure in which 3 to 8 pairs of barrier layers made of the material are stacked is about 0.05 to 0.3 μm, for example, a p-type layer 25 formed by a p-type GaN layer or the like is 0 The semiconductor laminated portion 29 is formed by sequentially laminating to a thickness of about 2 to 1 μm. Then, on the surface of the p-type layer 25, a light-transmitting conductive layer 26 made of, for example, ZnO is provided in a thickness of about 0.1 to 10 μm, and a part of the light-transmitting conductive layer 26 is formed of a laminated structure such as Ti / Au, Pd / Au The p-side electrode 27 having a thickness of about 0.1 to 1 μm as a whole is a laminated structure of Ti—Al alloy or Ti / Au on the back surface of the SiC substrate 1 and has a thickness of about 0.1 to 1 μm as a whole. Each of the n-side electrodes 28 is provided.

  In the above-described example, the SiC substrate is used as the substrate. However, the present invention is not limited to this material, and other semiconductor substrates such as GaN and GaAs can be used, and a sapphire substrate can also be used. In the case of a semiconductor substrate such as SiC, one electrode can be provided on the back surface of the substrate as shown in FIG. 2, but in the case of an insulating substrate such as sapphire, A part is removed by etching to expose the lower conductive type layer (n-type layer 23 in the configuration of FIG. 2), and an electrode is formed on the exposed portion. In the case of using a semiconductor substrate, in the above example, an n-type substrate is used to form an n-type layer in the lower layer. However, the substrate and the lower layer may be p-type layers. Further, the buffer layer 22 is not limited to the aforementioned AlGaN-based compound, and other nitride layers can be used. When the substrate is an insulating substrate, the connection means for the pair of electrode films 11 and 12 provided on the insulating substrate 1 is both made by wire bonding. However, even when both electrodes are formed on the surface side, as in the case where an insulating substrate is used, as described later with reference to FIG. it can.

  Further, the n-type layer 23 and the p-type layer 25 are not limited to the GaN layer described above, and may be an AlGaN-based compound or the like, and each is not a single layer and has a band gap such as an AlGaN-based compound on the active layer side. It can also be formed of multiple layers of a material that easily traps carriers and a GaN layer that easily increases carrier concentration on the side opposite to the active layer. The material of the active layer 24 is selected according to a desired emission wavelength, and is not limited to the MQW structure, and may be formed of an SQW or a bulk layer. Further, the translucent conductive layer 26 is not limited to ZnO, but may be a thin alloy layer of about 2 to 100 nm of ITO or Ni and Au, and diffuses current throughout the chip while transmitting light. Anything that can do. In the case of the Ni—Au layer, since it is a metal layer, if it is made thick, it becomes non-translucent, so it is formed thin. However, in the case of ZnO or ITO, it may be thick because it transmits light.

  The LED chip 2 is die-bonded onto the first electrode film 11 via the conductive adhesive 31 (connecting means 3), for example, so that the electrode on the substrate side of the LED chip 2 (n-side electrode 28) is formed. The first electrode film 11 is electrically connected, and the upper electrode (p-side electrode 27) is electrically connected to the second electrode film 12 by a wire 32 (connection means 3) such as a gold wire. When the LED chip 2 is formed by laminating a nitride semiconductor layer on an insulating substrate, both electrodes are electrically connected by wires or die-bonded face-down as shown in FIG. The The first resin layer 4 and the second resin layer 5 described above are formed by a coating method so as to cover the periphery of the LED chip 2. The first and second resin layers 4 and 5 can be applied to the very small LED chip 2 with high accuracy by applying the transfer method as described later.

  Next, a method for manufacturing the white light emitting element will be described with reference to the process explanatory diagram of FIG. 1A to 1C show the AA cross section of FIG. 1F, and FIGS. 1D to 1E show the BB cross section of FIG. 1F, respectively. First, as shown in FIG. 1A, a pair of electrode films 11 and 12 are formed on an insulating substrate 1. As described above, a pair of electrode films 11 and 12 are formed by screen printing a conductive paste such as an Ag paste on the surface using a large insulating substrate 1 for manufacturing a plurality of pieces at once. On the back surface of the insulating substrate 1, the back surface electrodes 11 a and 12 a are formed on the end portions of the portions corresponding to the pair of electrode films 11 and 12.

  Next, as shown in FIG. 1 (b), an LED chip 2 that emits blue or ultraviolet light is mounted on one surface of the pair of electrode films 11 and 12 or the surface of the insulating substrate 1. A pair of electrodes (p-side electrode and n-side electrode) are electrically connected to the pair of electrode films 11 and 12, respectively. In the example shown in FIG. 1, the n-side electrode of the LED chip 2 is connected to the first electrode film 11 by the conductive adhesive 31 (connecting means 3), and the p-side electrode (upper electrode) is connected to the wire 32 (connecting means). 3) is electrically connected to the second electrode film 12 by bonding.

  Thereafter, as shown in FIG. 1C, a reflective case 6 formed of, for example, a liquid crystal polymer resin is attached around each element. The reflection case 6 reflects the light directed in the lateral direction to the upper surface side so that the light emitted from the LED chip 2 is collectively emitted to the upper surface side, and is formed of a white resin or the like that is easy to reflect. ing. If the light is emitted in the lateral direction without being limited to the light emission to the upper surface side, the reflection case 6 need not be provided.

Thereafter, as shown in FIG. 1D, a resin mixed with a red conversion member 4a that converts blue or ultraviolet light emitted from the LED chip 2 into red is applied by, for example, a transfer method. That is, for example, the resin 4 mixed with the red conversion member described above is attached to the tip of a needle-like transfer pin 7 made of a titanium alloy or the like having a tip area of about 0.008 mm ² , and the tip is attached to an LED chip. The resin 4 attached to the tip of the transfer pin 7 is transferred to the LED chip 2 by bringing it into contact with one side or one corner of the two. By using this method, the amount of the resin 4 that adheres according to the area of the tip of the transfer pin 7 becomes constant, so that the amount of resin applied to the LED chip 2 can be made constant. As a result, even a small LED chip 2 can be applied so as to cover about half of it. As a coating method, a predetermined amount of resin can be injected using, for example, a dispenser instead of the transfer method. However, since the amount of resin to be coated is about 0.0003 mm ³ , the LED chip 2 is accurately applied. The coating is preferably performed by a transfer method.

  In this case, when the wire 32 is stretched on the electrode on the upper surface of the LED chip 2, it is formed in the direction in which the wire 32 is stretched (direction in which the wire 32 extends) in order to prevent the transfer pin from contacting the wire 32. The transfer pin is approached from one of both sides of the surface to be sandwiched, and one side of the LED chip 2 (when the wire extends in a direction parallel to one side of the LED chip 2) or one corner (the wire is a corner of the LED chip 2) (When it is stretched to the side), the resin can be accurately transferred to the LED chip 2 without bringing the transfer pin 7 into contact with the wire 32.

  Next, the resin is transferred to the other half side of the LED chip 2 by using the resin mixed with the green color conversion member, and the second resin layer 5 in close contact with the LED chip 2 is formed. In this case, there is a portion that overlaps the first resin layer 4 in the center of the LED chip 2, but it may overlap. This is because if the first resin layer 4 mixed with the red color conversion member is applied first, the light having the converted emission color is not reconverted. It is not necessary to apply the resin for forming the second resin layer 5 after the first resin layer 4 is dried. Actually, the light emitting element portion formed vertically and horizontally on the large insulating substrate 1 is used. Resin can be applied alternately and continuously.

  Thereafter, a conductive paste such as an Ag paste is applied to the insulating substrate 1 so as to cut and separate each element from the large insulating substrate 1 and connect the pair of electrode films 11 and 12 and the back electrodes 11a and 11b. A chip-type white semiconductor light-emitting element is obtained by applying a side surface and drying to form a side electrode (not shown). The side electrode can be connected in advance by forming a through hole in the insulating substrate. Further, the electrode film or the like can be formed by vacuum deposition, plating, or the like without using the conductive paste. In addition, after forming the 1st and 2nd resin layers 4 and 5, the whole can be further coat | covered with translucent resin. This is effective for protection when the wire 32 is not completely covered with the first and second resin layers 4 and 5.

  FIG. 3 is an example of a lamp-type light-emitting element, not a chip-type light-emitting element, and FIG. That is, a recess 8c is formed at the tip of one lead 8a of the pair of leads 8a and 8b, the LED chip 2 is die-bonded in the recess 8c, and one electrode is connected to the first lead 8a by the conductive adhesive 31. The other electrode is electrically connected to the second lead 8b by a wire 32. After the wire bonding, the first resin layer 4 is formed by the transfer method as described above, and then the second resin layer 5 is formed, and the entire upper part of the leads 8a and 8b is made transparent. By molding with resin to form the mold resin portion 9, a lamp-type white semiconductor light emitting element can be obtained. In addition, the same code | symbol is attached | subjected to the same part as the example shown by FIG. 1, and the description is abbreviate | omitted.

  FIG. 4 is an explanatory cross-sectional view showing a modification of the structure shown in FIG. That is, in this example, for example, the LED chip 2 has a semiconductor layer grown on an insulating substrate, and a pair of electrodes are formed on the surface side (a pair of electrodes can be formed on the surface side even in a semiconductor substrate instead of an insulating substrate). In this example, the pair of electrodes 27 and 28 of the LED chip 2 are die-bonded directly to the pair of electrode films 11 and 12 formed on the surface of the insulating substrate 1 with a conductive adhesive (not shown). The others are the same as those in the example shown in FIG. In this example, since wire bonding is not performed, even when the first resin layer 4 or the second resin layer 5 is applied and formed, the transfer pin can be easily used without worrying about contact with the wire. Can be applied.

  According to the present invention, the first resin layer mixed with the red conversion member and the second resin layer mixed with the green conversion member are provided so as to directly cover the periphery of the LED chip that emits blue light almost half by half. Therefore, the light emitted from the LED chip is converted into red and green without waste, and is separated from each other, so that the converted light of green and red is not converted into red. White light can be obtained by mixing light and blue light that is not converted. Moreover, by applying the resin by the transfer method, the amount of application can be controlled by the size of the tip area of the transfer pin, so even a small LED chip can accurately divide a very small amount of resin into two. Can be applied. As a result, the light of the desired color can be mixed in an accurate amount without wasting light, so that it is possible to stably emit white light with excellent glossiness and external quantum. A white semiconductor light emitting device with very high efficiency can be obtained.

It is sectional explanatory drawing which shows the manufacturing process of one Embodiment of the white semiconductor light-emitting device by this invention. It is a cross-sectional explanatory view showing an example of the LED chip of the light emitting element shown in FIG. It is sectional explanatory drawing which shows other embodiment of the white semiconductor light-emitting device of this invention. It is a cross-sectional explanatory view showing a modification of FIG. It is a figure which shows an example of the conventional white light emitting element. It is explanatory drawing which shows the other structural example which obtains the conventional white light.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Insulating board | substrate 2 LED chip 3 Connection means 4 1st resin layer 4a Red conversion member 5 2nd resin layer 5a Green conversion member 11 1st electrode film 12 2nd electrode film

Claims (3)

  An insulating substrate having a pair of electrode films formed at both ends, a light emitting element chip that emits blue light mounted on the insulating substrate, and a pair of electrodes of the light emitting element chip are connected to the insulating substrate. A resin in which a connecting means for electrically connecting to each of the pair of electrode films and a red conversion member that converts blue light emitted from the light emitting element chip into red is in close contact with the light emitting element chip to emit the light. A resin in which a first resin layer provided so as to cover almost half of the element chip and a green conversion member that converts blue light emitted from the light emitting element chip into green is in close contact with the light emitting element chip A second resin layer provided so as to cover the remaining half of the light emitting element chip, and at least one of the connecting means includes one electrode of the light emitting element chip and the pair of electrode films of Bract The consists wires connecting, the wire of the first and second layer of resin is formed and becomes white semiconductor light-emitting device of the surface perpendicular to the plane of the light emitting device chip as substantially dividing plane in a direction extending the.   A first lead having a curved recess at the tip, a second lead arranged in parallel with the first lead, and blue light mounted in the recess of the first lead A light-emitting element chip, a connection means for electrically connecting the pair of electrodes of the light-emitting element chip and the first and second REITs, and red conversion for converting blue light emitted by the light-emitting element chip into red The resin mixed with the first resin layer provided so that the resin mixed with the light emitting element chip is in close contact with the light emitting element chip, and the blue light emitted by the light emitting element chip is changed to green A resin mixed with a green conversion member to be converted has a second resin layer provided so as to be in close contact with the light emitting element chip and cover the remaining half of the light emitting element chip; At least one of the The first and second electrodes are composed of wires connecting one electrode of the element chip and the first or second lead, and the plane perpendicular to the surface of the light emitting element chip in the direction in which the wire extends is substantially divided. A white semiconductor light emitting element formed by forming a resin layer. A light emitting element chip that emits blue light is formed in a substantially cubic or rectangular parallelepiped shape, and a transfer pin having a resin mixed with a red conversion member that converts blue light emitted from the light emitting element chip into red is attached to the transfer pin. By making contact with one side or one corner of the surface of the light emitting element chip, the resin is transferred so as to cover almost half of the light emitting element chip to form a first resin layer. A transfer pin having a resin mixed with a green conversion member that converts blue light to be emitted into green is brought into contact with a side or corner opposite to the one side or one corner of the surface of the light emitting element chip; Thus, a method of manufacturing a white semiconductor light emitting device, in which the resin is transferred so as to cover the remaining half of the light emitting device chip to form a second resin layer, wherein the light emitting device chip is formed. The at least one electrode, the electrode film provided on the substrate the light emitting device chip is mounted or between the leads is provided in the vicinity of the light emitting device chip, and connected by bonding wires, the said wires A method for producing a white semiconductor light-emitting element, wherein the first and second resin layers are formed by bringing the transfer pin into contact with the light-emitting element chip from both sides across a surface formed in a stretched direction .

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