JP2013145927A - Semiconductor light-emitting device - Google Patents

Semiconductor light-emitting device Download PDF

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Publication number
JP2013145927A
JP2013145927A JP2013094148A JP2013094148A JP2013145927A JP 2013145927 A JP2013145927 A JP 2013145927A JP 2013094148 A JP2013094148 A JP 2013094148A JP 2013094148 A JP2013094148 A JP 2013094148A JP 2013145927 A JP2013145927 A JP 2013145927A
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Prior art keywords
layer
phosphor
semiconductor light
light emitting
light
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JP2013094148A
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Japanese (ja)
Inventor
Yasushi Hattori
靖 服部
Shinya Nunoue
真也 布上
Genichi Hatagoshi
玄一 波多腰
Shinji Saito
真司 斎藤
Naomi Shinoda
直美 信田
Masahiro Yamamoto
雅裕 山本
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Toshiba Corp
株式会社東芝
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909Post-treatment of the connector or wire bonding area
    • H01L2224/8592Applying permanent coating, e.g. protective coating

Abstract

A semiconductor light emitting device capable of outputting high-luminance light with high efficiency is provided.
A substrate (4) having a plane on which a semiconductor light emitting element is mounted, and a plurality of semiconductor light emitting elements (2) mounted on the plane of the substrate and emitting light in a range from ultraviolet light to visible light. And a laminated structure provided on the substrate so as to cover each of the plurality of semiconductor light emitting elements. The laminated structure includes a plurality of first light-transmitting layers (31) and an end portion that is provided on the plurality of first light-transmitting layers and reaches the plane of the substrate. And a phosphor layer (32) including a base material, and a second light transmissive layer (33) provided on the phosphor layer and having an end portion reaching the plane of the substrate. It is characterized by.
[Selection] FIG.

Description

  The present invention relates to a semiconductor light emitting device, and more particularly to a semiconductor light emitting device including a semiconductor light emitting element and a phosphor layer.

  In order to obtain an LED that emits white light with a uniform and excellent color tone at a wide projection angle, a resin layer not containing a phosphor, a resin layer containing a phosphor, and a resin layer not containing a phosphor are sequentially formed on the LED chip. Laminating has been proposed (see, for example, Patent Document 1). In addition, a semiconductor light-emitting device has been proposed in which a light-transmitting resin layer, a phosphor layer, and a light-transmitting resin layer are sequentially stacked on a semiconductor light-emitting chip (see, for example, Patent Document 2). In these semiconductor light emitting devices, a substrate having a recess is used, and the resin layer is disposed in the recess.

  On the other hand, as a semiconductor light-emitting device using a substrate having a flat surface, a white light-emitting diode in which a phosphor layer having a semicircular cross-sectional shape and a light-transmitting resin layer are sequentially stacked on an LED chip is disclosed ( For example, see Patent Document 3.) In addition, a semiconductor light emitting device has been proposed in which a light-transmitting inorganic layer having a square cross-sectional shape and a phosphor layer are stacked on an LED chip (see, for example, Patent Document 4).

  Furthermore, a white semiconductor light emitting device having a structure in which a buffer layer is provided on a chip and a phosphor layer is arranged thereon has been proposed (see, for example, Patent Document 5). In this case, the color unevenness on the emission observation surface is reduced by arranging the phosphor layer separately on the surface layer.

US Pat. No. 5,962,971 JP 2005-277127 A JP 2003-224306 A JP-A-2005-197509 JP 2004-80058 A

  Despite the increasing demands for the efficiency and brightness of semiconductor light-emitting devices, the conventional structure is incapable of meeting such demands sufficiently.

  An object of this invention is to provide the semiconductor light-emitting device which can output high-intensity light with high efficiency.

A semiconductor light emitting device according to one embodiment of the present invention includes a substrate having a plane on which a semiconductor light emitting element is mounted;
A plurality of semiconductor light emitting elements mounted on the plane of the substrate and emitting light in a range from ultraviolet light to visible light;
A laminated structure provided on the substrate so as to cover each of the plurality of semiconductor light emitting elements, and the laminated structure includes:
A plurality of first light transmissive layers;
A phosphor layer provided on the plurality of first light-transmitting layers, having an end portion reaching the plane of the substrate, and including a phosphor and a base material;
And a second light-transmitting layer provided on the phosphor layer and having an end portion reaching the plane of the substrate.

  ADVANTAGE OF THE INVENTION According to this invention, the semiconductor light-emitting device which can output high-intensity light with high efficiency is provided.

1 is a cross-sectional view of a semiconductor light emitting device according to an embodiment of the present invention. The top view of the semiconductor light-emitting device shown in FIG. 1 is a cross-sectional view of a main part of a semiconductor light emitting element in a semiconductor light emitting device according to an embodiment of the present invention. Sectional drawing of the principal part of the semiconductor light-emitting element in the semiconductor light-emitting device concerning other embodiment of this invention. Sectional drawing which shows the deformation | transformation of the multilayer structure in the semiconductor light-emitting device concerning one Embodiment of this invention. 1 is a cross-sectional view of a semiconductor device according to an embodiment of the present invention. The schematic diagram which shows the state of a fluorescent substance layer. Sectional drawing of the conventional semiconductor device. The schematic diagram which shows the state of a fluorescent substance layer. The schematic diagram explaining the shape of a multilayer structure. Sectional drawing of the semiconductor light-emitting device concerning other embodiment of this invention. Sectional drawing of the semiconductor light-emitting device concerning other embodiment of this invention. Sectional drawing of the semiconductor light-emitting device concerning other embodiment of this invention. Sectional drawing of the semiconductor light-emitting device concerning other embodiment of this invention. Sectional drawing of the semiconductor light-emitting device concerning other embodiment of this invention. Sectional drawing of the semiconductor light-emitting device concerning other embodiment of this invention. Sectional drawing of the semiconductor light-emitting device concerning other embodiment of this invention. Sectional drawing of the semiconductor light-emitting device concerning other embodiment of this invention. Sectional drawing of the semiconductor light-emitting device concerning other embodiment of this invention. The top view of the semiconductor light-emitting device shown in FIG. Sectional drawing of the semiconductor light-emitting device concerning other embodiment of this invention. Sectional drawing of the semiconductor light-emitting device concerning other embodiment of this invention.

  Embodiments of the present invention will be described below.

  The present inventors paid attention to the loss of light extraction efficiency in a conventional semiconductor light emitting device. Loss of light extraction efficiency can be paraphrased as a decrease in light emission efficiency. A part of the light extracted from the chip is scattered by the light conversion material (phosphor) or totally reflected at the resin-air interface, so that the inside of the resin It was found that this was caused by absorption. Such total reflection also occurs at the light conversion material-air interface, and part of the light is similarly absorbed in the resin.

  In addition, when a package cup is used in order to uniformly arrange the phosphor in the phosphor layer, the light emitting surface becomes wide because the entire cup is used. As a result, the obtained luminance is lowered.

  Based on these findings, the present inventors have proposed a substrate having a flat surface and at least two light-transmitting layers arranged with a phosphor layer interposed therebetween in order to increase luminous efficiency (light extraction efficiency) and luminance. It has been found that it is effective to provide the present invention, and the present invention has been made.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the embodiments, components having the same function are denoted by the same reference numerals, and redundant description is omitted.

  FIG. 1 is a cross-sectional view of a semiconductor light emitting device according to an embodiment of the present invention. As shown in the figure, in the semiconductor light emitting device according to the embodiment of the present invention, the semiconductor light emitting element 2 is mounted on the plane on which the semiconductor light emitting element of the substrate 4 is mounted. The multilayer structure 3 including the light transmitting layer 31, the phosphor layer 32, and the second light transmitting layer 33 is sequentially provided. The semiconductor light emitting element 2 emits light within a range from ultraviolet light to visible light. Further, the end portions of all the layers of the first light transmissive layer 31, the phosphor layer 32, and the second light transmissive layer 33 reach the plane of the substrate 4.

  In the semiconductor light emitting device according to the embodiment of the present invention, since a substrate having a flat surface is used instead of a package cup, there is no possibility of absorption by the cup. As a result, the light extraction efficiency is improved. In addition, a small point light source corresponding to the size of the semiconductor light emitting element can be obtained, and high luminance can be output.

  In addition, the board | substrate 4 which has a plane contains the board | substrate base material 41 used as a main body, and the wiring 42 and the wiring 43 which were provided in this base material 41. FIG. As the substrate base material 41, for example, a flat plate base material can be used. The wiring 42 is disposed in the center of the front surface and the center of the back surface of the substrate base material 41, and both are electrically connected by through-hole wiring. On the other hand, the wiring 43 is disposed around the front surface and the back surface of the substrate base material 41, and both are electrically connected by through-hole wiring.

  The wiring 43 is electrically connected to the main electrode (not shown) of the semiconductor light emitting element 2 via the wire 5. For example, the wire 5 is not necessarily required depending on the structure of the semiconductor light emitting element 2 as in the case of using a flip chip. When both the main electrodes of the semiconductor light emitting element 2 are located on the upper surface, the wirings 42 and 43 are electrically connected to the respective electrodes via wires. The substrate 4 and the wire 5 are not limited to the illustrated example.

  A top view of the semiconductor light emitting device shown in FIG. 1 is shown in FIG. As shown in the figure, in the semiconductor light emitting device of this embodiment, the multilayer structure 3 including the first light transmissive layer 31, the phosphor layer 32, and the second light transmissive layer 32 is formed of the semiconductor light emitting element 2. It is arranged in a circle around it.

As the substrate base material 41, it is preferable to use a material having excellent thermal conductivity. For example, AlN, Al 2 O 3 , Cu, BN, plastic, ceramics, diamond and the like can be mentioned. By using the substrate substrate made of such a material, the heat generated by the operation of the semiconductor light emitting element 2 can be efficiently released. The wirings 42 and 43 have a small wiring resistance value and a low visible light absorption rate. It is preferable to use a material. For example, the wirings 42 and 43 can be formed of a material made of Au, Ag, Cu, Cu alloy, or W. These wirings may be either thin film wirings or thick film wirings. Furthermore, an Au plating layer, an Ag plating layer, a Pd plating layer, or a solder plating layer can be formed on the wirings 42 and 43 in order to improve bondability.

  The wire 5 is preferably made of a material having a small resistance value and a low visible light absorption rate. For example, an Au wire can be used. Or you may use the wire which combined noble metals, such as Pt, and Au.

  As the semiconductor light emitting device 2, for example, a light emitting diode having an AlGaInN light emitting layer (or AlGaInN active layer) 205 which is a group III nitride compound semiconductor can be used. An example is shown in FIG.

The group III nitride compound semiconductor can be represented by, for example, the general formula Al X Ga Y In 1-XY N (0 ≦ X ≦ 1, 0 ≦ Y ≦ 1, 0 ≦ X + Y ≦ 1). These general formulas include binary systems of AlN, GaN and InN, ternary systems of Al x Ga 1-x N, Al x In 1-x N and Ga x In 1-x N (0 <x <1). The compound semiconductor of any composition of these is included. In the group III nitride compound semiconductor, part of the group III element can be substituted with B or Tl. In the group III nitride compound semiconductor, a part of N can be substituted with P, As, Sb, Bi, or the like.

  In the semiconductor light emitting device 2 shown in FIG. 3, on the sapphire substrate 201, an AlGaInN buffer layer 202, an n-type AlGaInN contact layer 203, an n-type AlGaInN cladding layer 204, an AlGaInN light-emitting layer 205, a p-type AlGaInN cladding layer 206, and A p-type AlGaInN contact layer 207 is sequentially stacked. An n-type electrode (first main electrode) 208 is disposed on the n-type AlGaInN contact layer 203, and a p-type electrode (second main electrode) 209 is disposed on the p-type AlGaInN contact layer 207. However, the layer structure is not limited to the embodiment shown in FIG. For example, a conductive substrate such as GaN may be used as the substrate 201 and the electrode 208 may be provided under the substrate 201.

As the semiconductor light emitting element 2, a laser diode or a light emitting diode having an MgZnO light emitting layer (or an MgZnO active layer) can also be used. The general formula is represented by Mg X Zn 1-X O (0 ≦ X ≦ 1). An example of a semiconductor light emitting device including such a light emitting layer is shown in FIG.

  In the illustrated semiconductor light emitting device 2, a ZnO buffer layer 212, a p-type MgZnO layer 213, an MgZnO light emitting layer 214, and an n-type MgZnO layer 215 are stacked on a sapphire substrate 211. A metal electrode (first main electrode) 217 is disposed on the p-type MgZnO layer 213 via an ITO electrode layer 216, and a metal electrode (second electrode) is disposed on the n-type MgZnO layer 215 via an ITO electrode layer 218. Main electrode) 219 is provided. However, the layer structure is not limited to the embodiment shown in FIG.

  An example of the cross-sectional shape of the laminated structure 3 including the first light transmissive layer 31, the phosphor layer 32, and the second light transmissive layer 33 is shown in FIG. As illustrated, various shapes can be employed. The shape of the outer periphery in a cross section perpendicular to the substrate can be any of a semicircular arc shape, a parabolic shape, a U shape, or a shape including two or more straight lines. For example, when the outer periphery of the cross section of the laminated structure 3 has a shape including two straight lines, the cross section perpendicular to the substrate of the laminated structure 3 has a triangular shape due to the outer periphery and the plane of the substrate 4. When the outer periphery of the cross section is composed of three straight lines, the shape of the cross section can be, for example, rectangular or trapezoidal.

  The outer periphery in the cross section perpendicular | vertical with respect to each board | substrate of the 1st light transmissive layer 31, the fluorescent substance layer 32, and the 2nd light transmissive layer 33 does not necessarily need to be the same shape.

  Even when the first light-transmitting layer 31, the phosphor layer 32, and the second light-transmitting layer 33 are provided in any shape shown in FIG. 5, the second light-transmitting layer 33 and the air Total reflection at the interface is reduced, and light absorption by the second light transmissive layer is reduced. Therefore, the efficiency and brightness of the semiconductor light emitting device according to the embodiment of the present invention are increased.

  The mechanism will be described with reference to the drawings. FIG. 6 is a cross-sectional view of a semiconductor light emitting device according to an embodiment of the present invention. FIG. 7A and FIG. 7B show the dispersion state of the phosphor in the skirt portion (region A1) and the top portion (region B1) of the phosphor layer 32, respectively. FIG. 7A shows the state of the skirt portion (region A1) in contact with the substrate 4, and FIG. 7B shows the state of the top portion (region B1).

  As shown in FIG. 7A, the phosphor layer 32 includes a base material 52 and a phosphor 51 dispersed in the base material. Here, the case where resin is used as the base material 52 will be described. In the semiconductor light emitting device according to the embodiment of the present invention, since the second light transmissive layer 33 is further provided on the phosphor layer 32, as shown in FIG. The tailing 53 is reduced. In addition, since the second light transmissive layer 33 is present on the phosphor layer 32, the distance between the phosphor 51 and the air is also increased. As a result, the influence of total reflection at the phosphor-air interface is small. On the other hand, at the top of the laminated structure, as shown in FIG. 7B, the shape of the phosphor 51 is not reflected on the surface. Since the second light transmitting layer 33 is present, the smoothness of the surface of the multilayer structure is good. As a result, total reflection can be reduced and light extraction efficiency can be increased. Such a structure has been achieved by the present inventors.

  A conventional structure will be described with reference to FIGS. FIG. 8 is a cross-sectional view of a conventional semiconductor light emitting device. The phosphor layer 32 provided on the light transmissive layer 31 is in contact with air. Therefore, as shown in FIG. 9A, a resin skirt 52 is greatly generated in the skirt portion (A2) of the phosphor layer 32. Such tailing leads to a decrease in luminous efficiency due to an increase in total reflection and reabsorption. On the other hand, at the top of the laminated structure, as shown in FIG. 9B, irregularities reflecting the shape of the phosphor 51 are generated on the surface. As a result, the outermost surface has irregularities, and the efficiency decreases due to an increase in total reflection and reabsorption.

  In both the skirt and the top, the conventional structure causes a decrease in efficiency. In the semiconductor light emitting device according to the embodiment of the present invention, such a cause can be avoided.

  The first light transmissive layer 31 can be composed of a resin or glass layer having light transmissive properties. As the resin, it is possible to use any resin that has high light transmittance and is resistant to heat. For example, any of a silicone resin, an epoxy resin, a urea resin, a fluororesin, an acrylic resin, a polyimide resin, or glass can be used. In particular, an epoxy resin or a silicone resin is optimal because it is easily available, easy to handle, and inexpensive.

  The shape of the outer periphery in the cross section perpendicular to the substrate of the first light transmissive layer 31 can be any of a semicircular arc shape, a parabola shape, a U shape, or a shape including two or more straight lines. The thickness of the first light transmissive layer 31 is not particularly limited as long as it is not less than a size that completely covers the semiconductor light emitting element 2. The width of the bottom surface including the semiconductor light emitting element 2 in contact with the substrate 4 is preferably 200 μm to 500 μm. Further, the height is preferably within 0.25 to 1 times the width of the bottom surface. Within such a range, the light extraction efficiency from the semiconductor light emitting element 2 to the outside of the phosphor layer 32 and the second light transmitting layer 33 (outside the device) can be sufficiently increased.

  Since the first light transmissive layer 31 is present, the distance between the phosphor contained in the phosphor layer 32 and the semiconductor light emitting element 2 is increased. As a result, the thickness of the phosphor layer can be adjusted. In addition, by adjusting the phosphor layer to an optimum thickness, it is possible to prevent reabsorption by the phosphor and increase the light emission efficiency. In addition, since the first light transmissive layer 31 is provided between the phosphor layer 32 and the semiconductor light emitting element 2, reabsorption is reduced.

  The phosphor layer 32 can be configured by encapsulating a phosphor material in a phosphor base material. As the phosphor base material, any material having high light transmittance and strong heat resistance can be used. For example, silicone resin, epoxy resin, urea resin, fluororesin, acrylic resin, or polyimide resin can be used as the phosphor base material. In particular, an epoxy resin or a silicone resin is optimal because it is easily available, easy to handle, and inexpensive.

Besides the resin, glass, a sintered body, a ceramic structure in which YAG and Al 2 O 3 are combined, and the like can be used as the phosphor base material. As the phosphor base material, it is preferable to use the same substance as the first light-transmitting layer 31 described above. It is desirable that the refractive index of the phosphor substrate is the same as the refractive index of the first light transmissive layer 31. The refractive index of the phosphor substrate is more preferably lower than that of the first light-transmitting layer 31 and higher than that of the second light-transmitting layer 33.

  The shape of the outer periphery in the cross section perpendicular to the substrate of the phosphor layer 32 can be any one of a semicircular arc shape, a parabolic shape, a U shape, or a shape including two or more straight lines. The thickness of the phosphor layer 32 is not limited as long as it is not less than a size that completely covers the semiconductor light emitting element 2 and the first light transmitting layer 31. The thickness of the phosphor layer 32 is preferably within a range from 20 μm to 300 μm.

  The phosphor material is a substance that absorbs light in a region from ultraviolet to blue and emits visible light. Specifically, the following silicate phosphor materials, aluminate phosphor materials, nitride phosphor materials, sulfide phosphor materials, oxysulfide phosphor materials, YAG phosphor materials Any one of phosphoric acid borate phosphor materials, phosphate phosphor materials, and halophosphate phosphor materials can be used.

(1) Silicate-based phosphor material: (Sr 1-xyz Ba x Ca y Eu z ) 2 Si w O 2 + 2w (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0.05 ≦ z ≦ 0. 2, 0.90 ≦ w ≦ 1.10)
A composition of x = 0.19, y = 0, z = 0.05, w = 1.0 is preferable.

  In the silicate phosphor material described above, at least a part of Sr, Ba or Ca may be replaced with at least one of Mg, Be and Zn. Thereby, the stability of the crystal structure and the emission intensity can be further increased.

As silicate-based phosphor materials having other composition ratios, MSiO 3 , MSiO 4 , M 2 SiO 3 , M 2 SiO 5 , and M 4 Si 2 O 8 (M is Sr, Ba, Ca, Mg, Be, Zn). , And Y.).

By replacing at least a part of Si with Ge in the silicate phosphor material described above. The emission color can be controlled. For example, (Sr 1-xyz Ba x Ca y Eu z ) 2 (Si 1-u Ge u ) O 4 may be mentioned.

  Moreover, at least 1 type selected from Ti, Pb, Mn, As, Al, Pr, Tb, and Ce may be contained as an activator.

(2) Aluminate phosphor material: M 2 Al 10 O 17
M is at least one selected from the group consisting of Ba, Sr, Mg, Zn and Ca, and includes at least one of Eu and Mn as an activator.

Examples of silicate phosphor materials having other composition ratios include MAl 2 O 4 , MAl 4 O 17 , MAl 8 O 13 , MAl 12 O 19 , M 2 Al 10 O 17 , M 2 Al 11 O 19 , and M 3. Al 5 O 12 , M 3 Al 16 O 27 , and M 4 Al 5 O 12 may be mentioned. M is at least one selected from the group consisting of Ba, Sr, Ca, Mg, Be and Zn. Moreover, at least 1 type selected from Mn, Dy, Tb, Nd, and Ce may be contained as an activator.

(3) Nitride-based phosphor materials (mainly silicon nitride-based phosphor materials):
L X Si Y N (2 / 3X + 4 / 3Y) : Eu or L X Si Y O Z N (2 / 3X + 4 / 3Y-2 / 3Z) : Eu
L is selected from Sr, Ca, Sr and Ca. X = 2 and Y = 5, or X = 1 and Y = 7 are preferred, but X and Y can be any value.

Specifically, the basic constituent elements, Mn is added (Sr X Ca 1-X) 2 Si 5 N 8: Eu, Sr 2 Si 5 N 8: Eu, Ca 2 Si 5 N 8: Eu, Sr X Ca 1-X Si 7 N 10: Eu, SrSi 7 N 10: Eu, CaSi 7 N 10: it is preferable to use a fluorescent material represented in Eu. Such a phosphor material may contain at least one selected from the group consisting of Mg, Sr, Ca, Ba, Zn, B, Al, Cu, Mn, Cr, and Ni. Moreover, at least 1 type of Ce, Pr, Tb, Nd, and La may be contained as an activator.

(4) Sulfide-based phosphor material: (Zn 1 -X Cd x ) S: M
x is a numerical value satisfying 0 ≦ x ≦ 1. M is at least one selected from Cu, Cl, Ag, Al, Fe, Cu, Ni, and Zn. S may be replaced with at least one of Se and Te.

(5) Oxysulfide phosphor material: (Ln 1-X Eu X ) O 2 S
Ln is at least one of Sc, Y, La, Gd, and Lu, and x is a numerical value that satisfies 0 ≦ x ≦ 1. Further, at least one of Tb, Pr, Mg, Ti, Nb, Ta, Ga, Sm and Tm may be contained as an activator.

(6) YAG-based phosphor materials: (Y 1-xyz, Gd x, La y, Sm z) 3 (Al 1-y, Ga y) 5 O 12: Ce, Eu (0 ≦ x ≦ 1,0 ≦ y ≦ 1, 0 ≦ z ≦ 1.0 ≦ v ≦ 1)
At least one of Cr and Tb may be contained as an activator.

(7) Borate phosphor MBO 3 : Eu (M is at least one of Y, La, Gd, Lu, and In. Tb may be contained as an activator.)
Examples of borate phosphor materials having other composition ratios include Cd 2 B 2 O 5 : Mn, (Ce, Gd, Tb) MgB 5 O 10 : Mn, and GdMgB 5 O 10 : Ce, Tb.

(8) Phosphate borate phosphor material: 2 (M 1-x , M ′ x ) O.aP 2 O 5 .bB 2 O 3
M is at least one of Mg, Ca, Sr, Ba, and Zn, and M ′ is at least one of Eu, Mn, Sn, Fe, and Cr. x, a, and b are numerical values satisfying 0.001 ≦ x ≦ 0.5, 0 ≦ a ≦ 2, 0 ≦ b ≦ 3, and 0.3 <a + b.

(9) Phosphate-based phosphor: (Sr 1 -X Ba X ) 3 (PO 4 ) 2 : Eu, (Sr 1 -X Ba X ) 2 P 2 O 7 : Eu, Sn
At least one of Ti and Ti may be contained as an activator.

(10) Halophosphate phosphor: (M 1-x Eu x ) 10 (PO 4 ) 6 Cl 2 , (M 1-x Eu x ) 5 (PO 4 ) 3 Cl
M is at least one of Ba, Sr, Ca, Mg, and Cd. x is a numerical value satisfying 0 ≦ x ≦ 1. At least a part of Cl may be replaced with F.

  At least one of Sb and Mn may be contained as an activator.

  A plurality of the above-described phosphor materials can be mixed to produce an inorganic phosphor material that emits an intermediate color. For example, a phosphor capable of obtaining white light can be obtained by mixing a dye of a color corresponding to each of RGB to produce a phosphor substrate. Even when phosphor materials are mixed, a phosphor capable of obtaining white light can be manufactured.

  The phosphor layer 32 is adjusted so that the phosphor material is sealed at a predetermined concentration in the phosphor base material and does not transmit the light output from the semiconductor light emitting element 2. Considering the balance between the thickness of the phosphor layer 32 and the light output from the semiconductor light emitting element, the concentration of the phosphor in the phosphor layer 32 is desirably 20 wt% or more. For example, a silicate phosphor material of 50 wt% or more can be enclosed in a phosphor base material made of resin, and adjustment can be made so as not to transmit light output from the semiconductor light emitting element 2. If the phosphor concentration is too high, bubbles are likely to be included, and it becomes difficult to maintain the shape and form a smooth interface. Therefore, the upper limit of the phosphor concentration in the phosphor layer 32 is about 90 wt%.

  Moreover, a desired effect can be acquired by changing the particle size of the fluorescent substance contained in the fluorescent substance layer 32. For example, when a phosphor having a thickness of 10 to 20 μm (average particle diameter of 15 μm) is used, a uniform phosphor layer can be easily produced, and thus the thickness and shape of the layer can be easily controlled. When a phosphor having a diameter of 20 to 45 μm (average particle diameter of 30 μm) is used, the light emission intensity and the light emission efficiency are particularly enhanced. In some cases, a phosphor having a larger particle size can be used. In the case of a phosphor of 45 to 70 μm (average particle diameter of 50 μm), the absorption rate of the phosphor is improved due to the large particle size, and the number of phosphors is reduced. For this reason, reabsorption is reduced and luminous efficiency is increased.

  When YAG: Ce is used as the phosphor material, the use of nanoparticles (50 nm or less) reduces scattering by the phosphor and increases the efficiency.

  The second light transmissive layer 33 can be formed of a resin or glass layer having light transmissive properties. For the second light transmissive layer 33, a material having high light transmittance and heat resistance can be used. For example, silicone resin, epoxy resin, urea resin, fluororesin, acrylic resin, polyimide resin, or glass can be used. In particular, an epoxy resin or a silicone resin is most suitable as the second light transmissive layer 33 because it is easily available, easy to handle, and inexpensive.

  The second light transmissive layer 33 can be formed of the same material as the phosphor base material constituting the first light transmissive layer 31 and the phosphor layer 32 described above, or a material having the same refractive index. Alternatively, the second light transmissive layer 33 may be formed using a material having a refractive index lower than that of the phosphor base material constituting the first light transmissive layer 31 and the phosphor layer 32. In this case, the refractive index changes stepwise within the device, and the refractive index difference at the interface of the air-light transmissive layer 33 becomes small. As a result, total reflection is reduced, and the light extraction efficiency is further improved, which is more preferable.

  The shape of the outer periphery in the cross section of the second light transmissive layer 33 can be any one of a semicircular arc shape, a parabolic shape, a U shape, or a shape including two or more straight lines. The thickness of the second light transmissive layer 33 is not limited as long as it is larger than the semiconductor light emitting element 2, the first light transmissive layer 31, and the phosphor layer 32. The thickness is preferably 20 μm or more and 500 μm. Furthermore, it is desirable that the height of the multilayer structure including the semiconductor light emitting element 2 is 0.25 to 1 times the width of the bottom surface. Within such a range, the light extraction efficiency can be sufficiently increased.

  Reabsorption is reduced by providing the second light-transmitting layer 33 between the phosphor layer 32 and the air.

In the semiconductor light emitting device according to the embodiment of the present invention, there is a preferable range in the radius and height of the laminated structure. FIG. 10 shows the radius and height of the laminated structure as R 1 and R 2 , respectively. The radius R 1 is a distance from the center of the semiconductor light emitting element 2 to the outer periphery of the second light transmissive layer 33 on the surface of the substrate 4, and the height R 2 is a plane on which the semiconductor light emitting element of the substrate 4 is mounted. To the top of the second light transmissive layer 33.

It has been found by the present inventors that R 1 = 500-1500 μm is optimal in the current production process. In the case of molding, the maximum value is not limited.

The efficiency is improved to a level exceeding 1.3 times that of the R 1 molding within a range of 1/2 (R 1 ) <R 2 <2R 1 . That is, each layer has a height in the range of 0.25 to 1 times the diameter of the bottom surface. When it is out of this range, specifically, when it is vertically long or horizontally long, total reflection increases and efficiency decreases.

  As described above, the multilayer structure provided so as to cover the semiconductor light emitting element in the semiconductor light emitting device according to the embodiment of the present invention can be configured in various shapes. A multilayer structure can be formed by an arbitrary method according to the shape.

  FIG. 11 shows a multilayer structure in which the shape of the outer periphery in the cross section is a parabolic shape. Such a multilayer structure can be easily formed into a desired shape by controlling the viscosity and temperature of the resin, and can be manufactured by the following method, for example. First, the semiconductor light emitting element 2 is mounted on a plane on which the semiconductor light emitting element of the substrate 4 is mounted. The first main electrode of the semiconductor light emitting element 2 and the wiring 42 of the substrate 4 are electrically connected, and the second main electrode and the wiring 43 are electrically connected via the wire 5. Thereafter, a lighting test of the semiconductor light emitting element 2 is performed.

  After the lighting test, using a dispenser, a resin is dropped onto the surface of the substrate 4 on which lighting has been confirmed. Immediately after application, the resin is cured to produce a multilayer structure. By adjusting manufacturing conditions such as resin viscosity, surface tension, substrate wettability, or temperature, the outer peripheral shape in the cross section of the multilayer structure 3 can be made parabolic. In order to obtain such a shape, for example, the viscosity of the resin can be about 2 to 10 Pa · s. The temperature may be about room temperature (25 ° C.) to about 200 ° C. according to the curing temperature of the resin.

  FIG. 12 shows a semiconductor light emitting device having a multilayer structure 3 having a rectangular cross section. In the multilayer structure 3 having such a shape, for example, a first light-transmitting layer 31, a phosphor layer 32, and a second light-transmitting layer 33 are sequentially formed on a substrate 4 on which the semiconductor light emitting element 2 is mounted. It can be easily manufactured by molding. The outer periphery of the cross section perpendicular to the substrate plane of the multilayer structure in the semiconductor light emitting device shown in FIG. 12 includes three straight lines, and the space defined by the outer periphery and the surface of the substrate 4 is rectangular.

  Alternatively, the following method may be employed to form the multilayer structure 3 having a rectangular cross section perpendicular to the substrate plane. In this case, first, the multilayer structure 3 shown in FIG. 12 is manufactured by sequentially molding the resin as the raw material of each layer. Thereafter, the multilayer structure 3 is mechanically bonded onto the substrate 4, whereby the multilayer structure 3 can be arranged on a plane on which the semiconductor light emitting element of the substrate 4 is mounted. A resin adhesive having the same composition as that of the first light-transmitting layer 31 may be disposed and bonded between the surface of the substrate 4 and the multilayer structure 3.

  The second light transmissive layer 33 may be formed in a shape different from the outer peripheral shape in the cross section of the first light transmissive layer 31. FIG. 13 shows a cross-sectional view of an example of a semiconductor light emitting device including the first and second light transmissive layers having such a shape.

  In the semiconductor light emitting device shown in FIG. 13, the cross section perpendicular to the substrate plane of the first light transmissive layer 31 is rectangular, and the cross section perpendicular to the substrate plane of the second light transmissive layer 33. The shape of the outer periphery in is a parabolic shape. The multilayer structure having such a shape can be easily manufactured by using the ceramic plate-like material 32a containing the phosphor on the substrate 4 on which the semiconductor light emitting element 2 is mounted. The position of the ceramic plate-like substance containing the phosphor processed into an appropriate size is fixed with the resin used for the first light-transmitting layer 31. Furthermore, the 2nd light transmissive layer 33 is formed by dripping with resin etc., heating the resin used as the raw material of the 2nd light transmissive layer 33. FIG. By such a method, the multilayer structure shown in FIG. 13 can be easily manufactured.

Hereinafter, the present invention will be described in more detail with reference to specific examples.
First, an AlN substrate was prepared as the substrate 4. This substrate 4 can be easily manufactured by molding. A semiconductor light emitting element 2 having an InAlGaN light emitting layer that emits blue light was mounted on a plane of the substrate 4 on which the semiconductor light emitting element is mounted. The size of the used semiconductor light emitting device 2 is a bottom surface of 300 μm square and a height of 120 μm. After electrically connecting the wiring 42 of the substrate 4 and the semiconductor light emitting element 2 by the wire 5, the first light transmitting layer 31 is formed of silicone resin on the substrate 4 so as to cover the semiconductor light emitting element 2. did. While heating the substrate 4 at 150 ° C., it was dropped and cured using a dispenser. Finally, a first light-transmitting layer 31 having a parabolic outer peripheral shape and a thickness of 600 μm was manufactured.

Next, the phosphor layer 32 was formed. Silicone resin is used as the phosphor base material, and yellow phosphor material (Sr, Ca, Ba) 2 SiO 4 : Eu having an average particle diameter of 30 μm is added to the phosphor base material at a concentration of 75 wt%. A phosphor layer material was obtained. While heating the substrate 4 on which the first light transmissive layer 31 was formed at 150 ° C., the phosphor layer material was dropped using a dispenser and cured. Thus, a phosphor layer 32 having a parabolic outer peripheral shape and a thickness of 100 μm was manufactured.

  Further, the second light transmissive layer 33 was formed using a silicone resin. While heating the substrate 4 on which the first light transmissive layer 31 and the phosphor layer 32 were formed at 150 ° C., a silicone resin was dropped using a dispenser and cured. As a result, a second light-transmitting layer 33 having a parabolic outer peripheral shape in a cross section perpendicular to the substrate plane and a thickness of 300 μm was finally formed. Through the above steps, the semiconductor light emitting device as shown in FIG. 1 was obtained.

  An operating voltage was applied between the main electrodes of the semiconductor light emitting device 2 to emit blue light. The phosphor layer 32 is irradiated from the semiconductor light emitting element 2 through the first light-transmitting layer 31, and the phosphor layer 32 absorbs part of the blue light and emits yellow light, and transmits the second light. The semiconductor light emitting device 1 emitted white light through the conductive layer 33.

  The semiconductor light emitting device 1 of this embodiment has a structure in which loss due to light absorption inside the device is reduced. For this reason, the excitation light emitted from the semiconductor light emitting element 2 can be used effectively, and light can be emitted with high efficiency. Specifically, the efficiency emitted from the semiconductor light emitting device 1 of this example was 70 lm / W. However, the efficiency is obtained by measuring the total luminous flux using an integrating sphere with the rated use of the LED.

  For comparison, a semiconductor light emitting device was manufactured with the same configuration as described above except that the first light transmissive layer 31 was not provided (Comparative Example 1). When the semiconductor light emitting device of Comparative Example 1 was similarly driven, the efficiency of emitted light was 80% of that of the semiconductor light emitting device of the example. In addition, a semiconductor light emitting device was fabricated with the same configuration as described above except that the second light transmissive layer 33 was not provided (Comparative Example 2). When the semiconductor light emitting device of Comparative Example 2 was similarly driven, the efficiency of emitted light was 80% of that of the semiconductor light emitting device of the example. Further, a semiconductor light emitting device was manufactured with the same configuration as described above except that the substrate 4 was changed to a cup (Comparative Example 3). When the semiconductor light emitting device of Comparative Example 3 was similarly driven, the efficiency of emitted light was 80% of that of the semiconductor light emitting device of the example.

  The semiconductor light emitting device 1 according to the present embodiment has a simple structure of the semiconductor light emitting element 2 and a plurality of thin layers made of resin, so that the number of components is small, and miniaturization and high luminance are realized. Is possible.

In the example described above, the thicknesses of the first light transmissive layer 31, the phosphor layer 32, and the second light transmissive layer 33 are 600 μm, 100 μm, and 300 μm, respectively, but are not limited thereto. It is not a thing. The size can be appropriately changed according to the size of the semiconductor light emitting element 2 and the like. For example, when the size of the semiconductor light emitting element 2 is as large as 400 μm, the thicknesses of the first light transmitting layer 31, the phosphor layer 32, and the second light transmitting layer 33 are 800 μm, 50 μm, And can be changed to 600 μm. In this case, there exists an advantage that it can manufacture easily with a high yield. In addition, the luminous efficiency of the obtained semiconductor light emitting device is further enhanced. On the other hand, when the size of the semiconductor light emitting element 2 is as small as 200 μm, the thicknesses of the first light transmitting layer 31, the phosphor layer 32, and the second light transmitting layer 33 are 400 μm, 100 μm, And can be changed to 100 μm. In this case, the light emission luminance can be further increased. If the thickness completely covers the semiconductor light emitting element 2 and is within the above-mentioned range of 1/2 (R 1 ) <R 2 <2R 1 , the first light transmitting layer 31, the phosphor layer 32, The thickness of the second light transmissive layer 33 is not particularly limited.

  In the semiconductor light emitting device according to the embodiment of the present invention, a third light transmissive layer may be further provided outside the second light transmissive layer 33. Cross-sectional views of such a structure are shown in FIGS. 14 (a) and 14 (b).

  In the semiconductor light emitting device shown in FIG. 14, a first light transmissive layer 31, a phosphor layer 32, a second light transmissive layer 33, and a third light are disposed on the substrate 4 on which the semiconductor light emitting element 2 is provided. The light transmissive layer 34 and the fourth light transmissive layer 35 are sequentially provided. Note that the cross-sectional shape of such a multilayer structure may be rectangular as shown in FIG.

  The refractive index of the third light transmissive layer 34 is set lower than the refractive index of the second light transmissive layer 33, and the refractive index of the fourth light transmissive layer 35 is the third light transmissive layer 34. It is preferable that the refractive index is set lower than the refractive index. Thus, by providing the third light transmissive layer or the fourth light transmissive layer outside the second light transmissive layer, the light extraction efficiency can be further increased.

  For example, in the structure shown in FIG. 14A, the refractive index of the first light transmissive layer 31, the phosphor layer 32, and the refractive index of the second light transmissive layer 33 are all 1.52. In this case, the refractive index of the third light transmissive layer 34 can be 1.42. At this time, the refractive index of the fourth light transmissive layer 35 is desirably about 1.2 to 1.4. The refractive index of each layer can be adjusted, for example, by a technique of using a plurality of silicone resins having different substituents.

  By further providing the third light-transmitting layer using different silicone resins and changing the refractive index stepwise, the effect of suppressing the total reflection of light is further increased. As a result, the light emission efficiency (light extraction efficiency) is further enhanced as compared with the simple three-layer structure including the first light transmissive layer 31, the phosphor layer 32, and the second light transmissive layer 33.

  In the semiconductor light emitting device according to another embodiment of the present invention, two or more phosphor layers may be included. Due to the presence of the plurality of phosphor layers, the light from the semiconductor light emitting element is more effectively absorbed and the light emission efficiency can be increased. A sectional view of an example thereof is shown in FIG.

  In the illustrated semiconductor light emitting device, a first light transmissive layer 31, a phosphor layer 32, and a second light transmissive layer 33 are sequentially provided on a substrate 4 on which a semiconductor light emitting element 2 is provided. ing. The phosphor layer 32 is configured by stacking a red phosphor layer 32R including a red phosphor and a green phosphor layer 32G including a green phosphor.

Specifically, a blue light emitting chip having an InGaN light emitting layer is used as the semiconductor light emitting device 2, and CaAlSiN 3 : Eu and (Sr, Ca, Ba) 2 SiO 4 are used as the red phosphor and the green phosphor, respectively. : Eu can be used. In the case of such a configuration, an LED with high color reproducibility can be obtained while maintaining luminous efficiency.

  Alternatively, as shown in FIG. 15B, a three-layer structure of a red phosphor layer 32R including a red phosphor, a green phosphor layer 32G including a green phosphor, and a blue phosphor layer 32B including a blue phosphor. The phosphor layer 32 can also be configured. Thus, when using phosphors of three colors of red, green, and blue, the color reproducibility of the obtained semiconductor light emitting device is further improved. In addition, since the phosphor layers are laminated in order from the inside of the multilayer structure, red, green, and blue, the light emission is higher than that of a structure in which the phosphors of these three colors are mixed to provide a single phosphor layer. Reabsorption can be reduced. As a result, high luminous efficiency can be obtained.

  The multilayer structure including the red phosphor layer, the green phosphor layer, and the blue phosphor layer may have a rectangular cross section as shown in FIG. The semiconductor light emitting device shown in FIG. 16 was manufactured by the following method.

  First, the semiconductor light-emitting element 2 was mounted on the substrate 4 by a conventional method using a near-ultraviolet LED chip having a GaN light-emitting layer. On the semiconductor light emitting element 2, a silicone resin was applied and cured to form a first light transmissive layer 31. At this time, the first light transmissive layer 31 was produced by solidifying with a mold.

A red phosphor layer 32R including a red phosphor, a green phosphor layer 32G including a green phosphor, and a blue phosphor layer 32B including a blue phosphor are sequentially formed on the first light transmissive layer 31. A phosphor layer 32 was obtained. As red phosphor, green phosphor, and blue phosphor, La 2 O 2 S: Eu, BaMg 2 Al 16 O 27 : Eu, Mn, and (Sr, Ca, Ba) 10 (PO 4 ) 6 Cl, respectively. 2 : Eu was used.

  In forming the phosphor layer, each phosphor was mixed with a silicone resin to prepare a filmed phosphor layer, which was laminated. By using a phosphor layer formed into a film, a complicated multilayer shape can be easily produced.

  By making the cross section rectangular, a device can be more easily manufactured and manufactured at a low cost. When the first light-transmitting layer 31 and each phosphor film are bonded together, it is desirable to apply a small amount of silicone resin to the boundary. As a result, a robust device with little light loss can be manufactured.

  By providing a plurality of phosphor layers as described above, it is easy to adjust the phosphor amount and the emission color of the device. Each phosphor layer is set to a different phosphor species or a different phosphor concentration. By using a plurality of phosphors, color rendering can be improved. Moreover, when the kind of fluorescent substance differs, the structure which arrange | positions the fluorescent substance which emits light of a longer wavelength in an internal layer is more desirable. By providing a plurality of phosphor layers in this order, light absorption by the phosphor is suppressed and light extraction efficiency is increased.

  Further, it can be used in combination with a structure including a plurality of light-transmitting layers as described above. An example is shown in FIG. In the semiconductor light emitting device shown in FIG. 17A, on the substrate 4 on which the semiconductor light emitting element 2 is provided, the first light transmitting layer 31, the phosphor layer 32, the second light transmitting layer 33, the fluorescence. The body layer 32 and the third light transmissive layer 34 are sequentially provided. In this case, the two phosphor layers 32 can contain the same type of phosphor. In the semiconductor light emitting device shown in FIG. 17B, on the substrate 4 on which the semiconductor light emitting element 2 is provided, the first light transmitting layer 31, the red phosphor layer 32R including the red phosphor, the second The light transmissive layer 33, the yellow phosphor layer 32Y containing a yellow phosphor, and the third light transmissive layer 34 are sequentially provided.

  In the case of such a structure, the light extraction efficiency is further increased.

  FIG. 18 shows a semiconductor light emitting device according to still another embodiment of the present invention.

In the semiconductor light emitting device shown in the figure, the reflection plate 6 is provided outside the second light transmissive layer 33. The reflector 6 efficiently guides the light beam emitted from the second light transmissive layer 33 in any direction. As a result, the directivity of light can be improved and color unevenness can be further reduced. The reflector 6 can be made of a material having excellent thermal conductivity. In particular, it is desired to efficiently release the heat generated by the operation of the semiconductor light emitting element 2, and examples thereof include Cu, AlN, Al 2 O 3 , BN, plastic, ceramics, and diamond. In order to increase the reflectance, a reflecting film such as Ag may be formed on the reflecting plate surface.

  The reflection plate 6 is configured by a member (separate part) different from the substrate 4 and can be mechanically fixed to the substrate 4 by an adhesive, a fastening member, or the like. Alternatively, the reflecting plate 6 may be formed by integral molding with the substrate 4.

  The semiconductor light emitting device according to the embodiment of the present invention may adopt a multichip module structure as shown in FIG.

  In the semiconductor light emitting device 1 shown in FIG. 19, four semiconductor light emitting elements 2 are arranged in parallel on a substrate 4. A first light transmissive layer 31 and a phosphor layer 32 are provided on each semiconductor light emitting element 2. The four phosphor layers 32 are collectively covered with the second light transmissive layer 33. A plan view of the semiconductor light emitting device 1 is shown in FIG.

  The number of the semiconductor light emitting elements 2 mounted on the substrate 4 can be appropriately changed and arranged in an arbitrary shape. For example, as shown in FIG. 21, four semiconductor light emitting elements 2 may be arranged linearly. A first light transmissive layer 31 and a phosphor layer 32 are sequentially provided on each semiconductor light emitting element 2. A second light transmissive layer 33 is provided to cover the four phosphor layers 32 at once. Alternatively, as shown in FIG. 22, each semiconductor light emitting element 2 can be covered only with the first light transmissive layer 31. The phosphor layer 32 and the second light transmissive layer 33 collectively cover the four first light transmissive layers 31.

  As described above in detail, in the semiconductor light emitting device according to the embodiment of the present invention, the semiconductor light emitting element mounted on the substrate includes the first light transmitting layer, the phosphor layer, and the second light transmitting layer. Because it is covered with a multi-layered structure including high-intensity light, it becomes possible to output high-luminance light with high efficiency.

  The semiconductor light emitting device according to the embodiment of the present invention is not limited to the above-described example, and can be applied to various uses. For example, it can be used for a general lighting fixture, a commercial lighting fixture, a backlight of a liquid crystal display device of a television or a personal computer, and a light of an automobile, a motorcycle or a bicycle. In either case, high-intensity light is output at a high output.

DESCRIPTION OF SYMBOLS 1 ... Semiconductor light-emitting device; 2 ... Semiconductor light-emitting element; 3 ... Multilayer structure 31 ... 1st light transmissive layer; 32 ... Phosphor layer; 33 ... 2nd light transmissive layer 34 ... 3rd light transmissive layer 35: 4th light transmissive layer; 4 ... Substrate; 41 ... Substrate base material 42, 43 ... Wiring; 5 ... Wire; 6 ... Reflector; 51 ... Phosphor; 52 ... Base material 201 ... Sapphire substrate; DESCRIPTION OF SYMBOLS ... AlGaInN buffer layer 203 ... AlGaInN contact layer; 204 ... n-type AlGaInN clad layer 205 ... AlGaInN light emitting layer; 206 ... p-type AlGaInN clad layer;
207 ... p-type AlGaInN contact layer; 208 ... n-type electrode (first main electrode)
209 ... p-type electrode (second main electrode); 211 ... sapphire substrate;
212 ... ZnO buffer layer; 213 ... p-type MgZnO layer 214 ... MgZnO light emitting layer; 215 ... MgZnO light emitting layer; 216 ... ITO electrode layer 217 ... metal electrode (first main electrode); 218 ... ITO electrode layer 219 ... metal electrode (Second main electrode).

Claims (3)

  1. A substrate having a flat surface on which a semiconductor light emitting element is mounted;
    A plurality of semiconductor light emitting elements mounted on the plane of the substrate and emitting light in a range from ultraviolet light to visible light;
    A laminated structure provided on the substrate so as to cover each of the plurality of semiconductor light emitting elements, and the laminated structure includes:
    A plurality of first light transmissive layers;
    A phosphor layer provided on the plurality of first light-transmitting layers, having an end portion reaching the plane of the substrate, and including a phosphor and a base material;
    A semiconductor light emitting device comprising: a second light transmissive layer provided on the phosphor layer and having an end portion reaching the plane of the substrate.
  2.   The semiconductor light emitting device according to claim 1, wherein the phosphor layer and the second light transmissive layer collectively cover the plurality of first light transmissive layers.
  3.   The shape of the outer periphery in a cross section perpendicular to the plane of the first light transmissive layer is a shape including two or more straight lines, and is perpendicular to the plane of the second light transmissive layer. 3. The semiconductor light emitting device according to claim 1, wherein the shape of the outer periphery in the cross section is a shape including two or more straight lines.
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1187778A (en) * 1997-09-02 1999-03-30 Toshiba Corp Semiconductor light emitting element, semiconductor light emitting device and manufacture thereof
JP2000031531A (en) * 1998-07-14 2000-01-28 Toshiba Corp Light emitter
JP2004087812A (en) * 2002-08-27 2004-03-18 Sanyo Electric Co Ltd Light emitting device
JP2004228464A (en) * 2003-01-27 2004-08-12 Rohm Co Ltd Semiconductor light-emitting device
JP2005244226A (en) * 2004-02-23 2005-09-08 Lumileds Lighting Us Llc Wavelength conversion type semiconductor light emitting device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1187778A (en) * 1997-09-02 1999-03-30 Toshiba Corp Semiconductor light emitting element, semiconductor light emitting device and manufacture thereof
JP2000031531A (en) * 1998-07-14 2000-01-28 Toshiba Corp Light emitter
JP2004087812A (en) * 2002-08-27 2004-03-18 Sanyo Electric Co Ltd Light emitting device
JP2004228464A (en) * 2003-01-27 2004-08-12 Rohm Co Ltd Semiconductor light-emitting device
JP2005244226A (en) * 2004-02-23 2005-09-08 Lumileds Lighting Us Llc Wavelength conversion type semiconductor light emitting device

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