KR20160074421A - 단량체, 고분자 화합물, 레지스트 재료 및 패턴 형성 방법 - Google Patents
단량체, 고분자 화합물, 레지스트 재료 및 패턴 형성 방법 Download PDFInfo
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- KR20160074421A KR20160074421A KR1020150180776A KR20150180776A KR20160074421A KR 20160074421 A KR20160074421 A KR 20160074421A KR 1020150180776 A KR1020150180776 A KR 1020150180776A KR 20150180776 A KR20150180776 A KR 20150180776A KR 20160074421 A KR20160074421 A KR 20160074421A
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- 239000000047 product Substances 0.000 description 1
- UTNKPINVMZDAHQ-UHFFFAOYSA-N propan-2-yl 2-hydroxy-2-methylpropanoate Chemical compound CC(C)OC(=O)C(C)(C)O UTNKPINVMZDAHQ-UHFFFAOYSA-N 0.000 description 1
- 125000004368 propenyl group Chemical group C(=CC)* 0.000 description 1
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- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
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- 238000003860 storage Methods 0.000 description 1
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- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
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- 239000000725 suspension Substances 0.000 description 1
- WMOVHXAZOJBABW-UHFFFAOYSA-N tert-butyl acetate Chemical compound CC(=O)OC(C)(C)C WMOVHXAZOJBABW-UHFFFAOYSA-N 0.000 description 1
- JAELLLITIZHOGQ-UHFFFAOYSA-N tert-butyl propanoate Chemical compound CCC(=O)OC(C)(C)C JAELLLITIZHOGQ-UHFFFAOYSA-N 0.000 description 1
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- 125000001544 thienyl group Chemical group 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-M triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-M 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
- C07C69/013—Esters of alcohols having the esterified hydroxy group bound to a carbon atom of a ring other than a six-membered aromatic ring
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
- C07C69/74—Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a ring other than a six-membered aromatic ring
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
- C07C69/74—Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a ring other than a six-membered aromatic ring
- C07C69/743—Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a ring other than a six-membered aromatic ring of acids with a three-membered ring and with unsaturation outside the ring
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
- C07C69/74—Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a ring other than a six-membered aromatic ring
- C07C69/75—Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a ring other than a six-membered aromatic ring of acids with a six-membered ring
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F116/00—Homopolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical
- C08F116/02—Homopolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical by an alcohol radical
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
Claims (7)
- 하기 식 (1)로 표시되는 단량체.
(상기 식 중, R1은 수소 또는 메틸이고, R2 및 R3은 각각 독립적으로 직쇄형, 분지형 또는 환형의 C1-C10 1가 탄화수소기이고, R2 및 R3은 서로 결합하여 이들이 부착된 탄소 원자와 함께 지환기를 형성할 수 있고, X1은 직쇄형, 분지형 또는 환형의 C1-C20 2가 탄화수소기이고, 이 2가 탄화수소기를 구성하는 -CH2- 부분이 -O- 또는 -C(=O)-로 치환될 수 있으며, Z1은 직쇄형, 분지형 또는 환형의 C1-C20 지방족 탄화수소기이며, 이 지방족 탄화수소기를 구성하는 -CH2- 부분이 -O- 또는 -C(=O)-로 치환될 수 있으며, k1은 0 또는 1이고, k2는 2∼4의 정수이다.) - 제1항에 있어서, Z1이 환형의 C3-C20 지방족 탄화수소기인 단량체.
- 하기 식 (3)으로 표시되는 반복 단위를 포함하는 고분자 화합물.
(상기 식 중, R1은 수소 또는 메틸이고, R2 및 R3은 각각 독립적으로 직쇄형, 분지형 또는 환형의 C1-C10 1가 탄화수소기이고, R2 및 R3은 서로 결합하여 이들이 부착된 탄소 원자와 함께 지환기를 형성할 수 있고, X1은 직쇄형, 분지형 또는 환형의 C1-C20 2가 탄화수소기이고, 이 2가 탄화수소기를 구성하는 -CH2- 부분이 -O- 또는 -C(=O)-로 치환될 수 있으며, Z1은 직쇄형, 분지형 또는 환형의 C1-C20 지방족 탄화수소기이며, 이 지방족 탄화수소기를 구성하는 -CH2- 부분이 -O- 또는 -C(=O)-로 치환될 수 있으며, k1은 0 또는 1이고, k2는 2∼4의 정수이다.) - 제3항에 있어서, 하기 식 (A)∼(D)로 표시되는 반복 단위에서 선택되는 적어도 1종의 반복 단위를 더 포함하는 고분자 화합물.
(상기 식 중, R1은 상기 정의된 바와 같으며, ZA는 C1-C20 플루오로알콜 포함 기이고, ZB는 C1-C20 페놀성 히드록실 포함 기이고, ZC는 C1-C20 카르복실 포함 기이고, ZD는 락톤 골격, 술톤 골격, 카르보네이트 골격, 환형 에테르 골격, 산 무수물 골격, 알콜성 히드록실, 알콕시카르보닐, 술폰아미드 또는 카르바모일 부분을 갖는 치환기이고, X2는 단결합, 메틸렌, 에틸렌, 페닐렌, 불소화된 페닐렌, 나프틸렌, -O-R01- 또는 -C(=O)-Z2-R01-이고, Z2는 산소 또는 NH이고, R01은 직쇄형, 분지형 또는 환형의 C1-C6 알킬렌, 직쇄형, 분지형 또는 환형의 C2-C6 알케닐렌, 페닐렌 또는 나프틸렌 기이며, 카르보닐, 에스테르, 에테르 또는 히드록실 부분을 포함할 수 있다.) - 베이스 수지, 산 발생제 및 유기 용제를 포함하는 레지스트 재료로서, 상기 베이스 수지가 제3항의 고분자 화합물을 포함하는 레지스트 재료.
- 제5항의 레지스트 재료를 기판 상에 도포하는 단계, 가열 처리(baking)하여 레지스트 막을 형성시키는 단계, 상기 레지스트 막을 고에너지선에 노광하여 노광부 및 미노광부를 한정(defining)하는 단계, 가열 처리하는 단계, 및 노광된 레지스트 막을 현상액 중에서 현상하여 패턴을 형성시키는 단계를 포함하는 패턴 형성 방법.
- 제6항에 있어서, 상기 현상 단계는 알칼리 현상액을 사용하여, 레지스트 막의 미노광부를 용해시켜, 레지스트 막의 노광부가 용해되지 않은 네거티브톤 패턴을 형성시키는 패턴 형성 방법.
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JP6673105B2 (ja) * | 2016-08-31 | 2020-03-25 | 信越化学工業株式会社 | スルホニウム化合物、レジスト組成物及びパターン形成方法 |
JP6773006B2 (ja) * | 2016-11-14 | 2020-10-21 | 信越化学工業株式会社 | 化学増幅レジスト材料及びパターン形成方法 |
EP4372466A4 (en) * | 2021-07-14 | 2025-04-09 | FUJIFILM Corporation | Pattern formation method, manufacturing method for electronic device, actinic radiation-sensitive or radiation-sensitive resin composition and resist film |
JP7586797B2 (ja) | 2021-09-22 | 2024-11-19 | 信越化学工業株式会社 | 密着膜形成材料、パターン形成方法、及び密着膜の形成方法 |
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