KR20160067848A - 촬상 소자, 방사선 검출 장치 및 촬상 소자의 제어 방법 - Google Patents

촬상 소자, 방사선 검출 장치 및 촬상 소자의 제어 방법 Download PDF

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Publication number
KR20160067848A
KR20160067848A KR1020167008684A KR20167008684A KR20160067848A KR 20160067848 A KR20160067848 A KR 20160067848A KR 1020167008684 A KR1020167008684 A KR 1020167008684A KR 20167008684 A KR20167008684 A KR 20167008684A KR 20160067848 A KR20160067848 A KR 20160067848A
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KR
South Korea
Prior art keywords
photoelectric conversion
conversion element
floating diffusion
voltage
diffusion region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
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KR1020167008684A
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English (en)
Korean (ko)
Inventor
토시유키 니시하라
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소니 주식회사
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Application filed by 소니 주식회사 filed Critical 소니 주식회사
Publication of KR20160067848A publication Critical patent/KR20160067848A/ko
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/30—Transforming light or analogous information into electric information
    • H04N5/32—Transforming X-rays
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/70—Circuitry for compensating brightness variation in the scene
    • H04N23/73—Circuitry for compensating brightness variation in the scene by influencing the exposure time
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/161—Applications in the field of nuclear medicine, e.g. in vivo counting
    • G01T1/1611—Applications in the field of nuclear medicine, e.g. in vivo counting using both transmission and emission sources sequentially
    • G01T1/1612—Applications in the field of nuclear medicine, e.g. in vivo counting using both transmission and emission sources sequentially with scintillation detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T7/00—Details of radiation-measuring instruments
    • G01T7/005—Details of radiation-measuring instruments calibration techniques
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/30—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from X-rays
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H04N25/531—Control of the integration time by controlling rolling shutters in CMOS SSIS
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/65—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/767—Horizontal readout lines, multiplexers or registers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H04N5/3355—
    • H04N5/3532—
    • H04N5/357—
    • H04N5/3742—

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Health & Medical Sciences (AREA)
  • Medical Informatics (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Optics & Photonics (AREA)
  • Biomedical Technology (AREA)
  • Measurement Of Radiation (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
KR1020167008684A 2013-10-10 2014-09-02 촬상 소자, 방사선 검출 장치 및 촬상 소자의 제어 방법 Abandoned KR20160067848A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2013-212612 2013-10-10
JP2013212612A JP6087780B2 (ja) 2013-10-10 2013-10-10 撮像素子、放射線検出装置および撮像素子の制御方法
PCT/JP2014/004502 WO2015052864A1 (en) 2013-10-10 2014-09-02 Image-capturing device, radiation detection apparatus, and control method for image-capturing device

Publications (1)

Publication Number Publication Date
KR20160067848A true KR20160067848A (ko) 2016-06-14

Family

ID=51627335

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020167008684A Abandoned KR20160067848A (ko) 2013-10-10 2014-09-02 촬상 소자, 방사선 검출 장치 및 촬상 소자의 제어 방법

Country Status (7)

Country Link
US (1) US20160241795A1 (enExample)
EP (1) EP3055991A1 (enExample)
JP (1) JP6087780B2 (enExample)
KR (1) KR20160067848A (enExample)
CN (1) CN105659585B (enExample)
TW (1) TW201515204A (enExample)
WO (1) WO2015052864A1 (enExample)

Cited By (1)

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US11895411B2 (en) 2019-09-20 2024-02-06 Sony Semiconductor Solutions Corporation Imaging device with extended event signal detection timing

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US9653509B2 (en) * 2012-02-27 2017-05-16 Sony Semiconductor Solutions Corporation Image sensor and electronic device
JP2016180625A (ja) * 2015-03-23 2016-10-13 株式会社東芝 放射線検出装置、入出力較正方法、及び入出力較正プログラム
US9667895B2 (en) * 2015-05-08 2017-05-30 Omnivision Technologies, Inc. Stacked chip shared pixel architecture
US10165213B2 (en) * 2015-11-16 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor including pixel circuits
JP6821596B2 (ja) * 2015-11-19 2021-01-27 ソニーセミコンダクタソリューションズ株式会社 光パルス検出装置、光パルス検出方法、放射線計数装置、および生体検査装置
US11280918B2 (en) 2015-12-16 2022-03-22 Sony Corporation Imaging element, driving method, and electronic device
US11532663B2 (en) * 2016-08-12 2022-12-20 Sony Depthsensing Solutions Sa/Nv Demodulator with a carrier generating pinned photodiode
JP2018137336A (ja) * 2017-02-22 2018-08-30 ソニーセミコンダクタソリューションズ株式会社 受光装置
WO2019150785A1 (ja) * 2018-02-02 2019-08-08 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、撮像装置、および、固体撮像素子の制御方法
JP2020088480A (ja) * 2018-11-19 2020-06-04 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、および、撮像装置
JP2020088724A (ja) * 2018-11-29 2020-06-04 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、撮像装置、および、固体撮像素子の制御方法
JP7699058B2 (ja) * 2019-12-26 2025-06-26 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、および、撮像装置
US12192659B2 (en) * 2020-02-26 2025-01-07 Sony Semiconductor Solutions Corporation Solid-state imaging element, imaging device, and method for controlling solid-state imaging element
JP7626676B2 (ja) * 2021-07-05 2025-02-04 浜松ホトニクス株式会社 放射線画像取得装置、放射線画像取得システム、及び放射線画像取得方法
CN114488268A (zh) * 2021-12-28 2022-05-13 中国原子能科学研究院 一种辐射类型甄别系统及方法
JP2025527085A (ja) * 2022-07-21 2025-08-20 エーエスエムエル ネザーランズ ビー．ブイ． 検査中に検出器上の粒子を計数するシステム及び方法
WO2025134461A1 (ja) * 2023-12-22 2025-06-26 ソニーセミコンダクタソリューションズ株式会社 光検出装置

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JP2006508344A (ja) 2002-11-27 2006-03-09 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ ダイナミック閾値を有するガンマカメラ
JP2006242958A (ja) 2002-10-07 2006-09-14 Hitachi Ltd 放射線検出器，放射線検出素子及び放射線撮像装置
JP2011024773A (ja) 2009-07-24 2011-02-10 National Institute Of Advanced Industrial Science & Technology Ｘ線成分計測装置
JP2011097581A (ja) 2009-10-01 2011-05-12 Sony Corp 撮像素子およびカメラシステム

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JP2004077132A (ja) 2002-08-09 2004-03-11 Hamamatsu Photonics Kk Ｃｔ装置
JP2006242958A (ja) 2002-10-07 2006-09-14 Hitachi Ltd 放射線検出器，放射線検出素子及び放射線撮像装置
JP2006508344A (ja) 2002-11-27 2006-03-09 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ ダイナミック閾値を有するガンマカメラ
JP2011024773A (ja) 2009-07-24 2011-02-10 National Institute Of Advanced Industrial Science & Technology Ｘ線成分計測装置
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11895411B2 (en) 2019-09-20 2024-02-06 Sony Semiconductor Solutions Corporation Imaging device with extended event signal detection timing

Also Published As

Publication number Publication date
US20160241795A1 (en) 2016-08-18
WO2015052864A1 (en) 2015-04-16
CN105659585A (zh) 2016-06-08
EP3055991A1 (en) 2016-08-17
CN105659585B (zh) 2019-06-07
JP6087780B2 (ja) 2017-03-01
JP2015076773A (ja) 2015-04-20
TW201515204A (zh) 2015-04-16

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