JP6087780B2 - 撮像素子、放射線検出装置および撮像素子の制御方法 - Google Patents

撮像素子、放射線検出装置および撮像素子の制御方法 Download PDF

Info

Publication number
JP6087780B2
JP6087780B2 JP2013212612A JP2013212612A JP6087780B2 JP 6087780 B2 JP6087780 B2 JP 6087780B2 JP 2013212612 A JP2013212612 A JP 2013212612A JP 2013212612 A JP2013212612 A JP 2013212612A JP 6087780 B2 JP6087780 B2 JP 6087780B2
Authority
JP
Japan
Prior art keywords
voltage
photoelectric conversion
conversion element
transfer
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2013212612A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015076773A5 (enExample
JP2015076773A (ja
Inventor
西原　利幸
利幸 西原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
Original Assignee
Sony Semiconductor Solutions Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2013212612A priority Critical patent/JP6087780B2/ja
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Priority to US15/025,944 priority patent/US20160241795A1/en
Priority to PCT/JP2014/004502 priority patent/WO2015052864A1/en
Priority to KR1020167008684A priority patent/KR20160067848A/ko
Priority to EP14777188.5A priority patent/EP3055991A1/en
Priority to CN201480054777.4A priority patent/CN105659585B/zh
Priority to TW103131978A priority patent/TW201515204A/zh
Publication of JP2015076773A publication Critical patent/JP2015076773A/ja
Publication of JP2015076773A5 publication Critical patent/JP2015076773A5/ja
Application granted granted Critical
Publication of JP6087780B2 publication Critical patent/JP6087780B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/70—Circuitry for compensating brightness variation in the scene
    • H04N23/73—Circuitry for compensating brightness variation in the scene by influencing the exposure time
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/30—Transforming light or analogous information into electric information
    • H04N5/32—Transforming X-rays
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/161—Applications in the field of nuclear medicine, e.g. in vivo counting
    • G01T1/1611—Applications in the field of nuclear medicine, e.g. in vivo counting using both transmission and emission sources sequentially
    • G01T1/1612—Applications in the field of nuclear medicine, e.g. in vivo counting using both transmission and emission sources sequentially with scintillation detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T7/00—Details of radiation-measuring instruments
    • G01T7/005—Details of radiation-measuring instruments calibration techniques
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/30—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from X-rays
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H04N25/531—Control of the integration time by controlling rolling shutters in CMOS SSIS
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/65—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/767—Horizontal readout lines, multiplexers or registers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Health & Medical Sciences (AREA)
  • Medical Informatics (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Optics & Photonics (AREA)
  • Biomedical Technology (AREA)
  • Measurement Of Radiation (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2013212612A 2013-10-10 2013-10-10 撮像素子、放射線検出装置および撮像素子の制御方法 Expired - Fee Related JP6087780B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2013212612A JP6087780B2 (ja) 2013-10-10 2013-10-10 撮像素子、放射線検出装置および撮像素子の制御方法
PCT/JP2014/004502 WO2015052864A1 (en) 2013-10-10 2014-09-02 Image-capturing device, radiation detection apparatus, and control method for image-capturing device
KR1020167008684A KR20160067848A (ko) 2013-10-10 2014-09-02 촬상 소자, 방사선 검출 장치 및 촬상 소자의 제어 방법
EP14777188.5A EP3055991A1 (en) 2013-10-10 2014-09-02 Image-capturing device, radiation detection apparatus, and control method for image-capturing device
US15/025,944 US20160241795A1 (en) 2013-10-10 2014-09-02 Image-capturing device, radiation detection apparatus, and control method for image-capturing device
CN201480054777.4A CN105659585B (zh) 2013-10-10 2014-09-02 摄像器件、放射线检测装置及它们的控制方法
TW103131978A TW201515204A (zh) 2013-10-10 2014-09-16 影像捕獲器件，輻射偵測裝置，以及用於影像捕獲器件之控制方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013212612A JP6087780B2 (ja) 2013-10-10 2013-10-10 撮像素子、放射線検出装置および撮像素子の制御方法

Publications (3)

Publication Number Publication Date
JP2015076773A JP2015076773A (ja) 2015-04-20
JP2015076773A5 JP2015076773A5 (enExample) 2016-02-04
JP6087780B2 true JP6087780B2 (ja) 2017-03-01

Family

ID=51627335

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013212612A Expired - Fee Related JP6087780B2 (ja) 2013-10-10 2013-10-10 撮像素子、放射線検出装置および撮像素子の制御方法

Country Status (7)

Country Link
US (1) US20160241795A1 (enExample)
EP (1) EP3055991A1 (enExample)
JP (1) JP6087780B2 (enExample)
KR (1) KR20160067848A (enExample)
CN (1) CN105659585B (enExample)
TW (1) TW201515204A (enExample)
WO (1) WO2015052864A1 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9653509B2 (en) * 2012-02-27 2017-05-16 Sony Semiconductor Solutions Corporation Image sensor and electronic device
JP2016180625A (ja) * 2015-03-23 2016-10-13 株式会社東芝 放射線検出装置、入出力較正方法、及び入出力較正プログラム
US9667895B2 (en) * 2015-05-08 2017-05-30 Omnivision Technologies, Inc. Stacked chip shared pixel architecture
US10165213B2 (en) * 2015-11-16 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor including pixel circuits
JP6821596B2 (ja) * 2015-11-19 2021-01-27 ソニーセミコンダクタソリューションズ株式会社 光パルス検出装置、光パルス検出方法、放射線計数装置、および生体検査装置
US11280918B2 (en) 2015-12-16 2022-03-22 Sony Corporation Imaging element, driving method, and electronic device
US11532663B2 (en) * 2016-08-12 2022-12-20 Sony Depthsensing Solutions Sa/Nv Demodulator with a carrier generating pinned photodiode
JP2018137336A (ja) * 2017-02-22 2018-08-30 ソニーセミコンダクタソリューションズ株式会社 受光装置
WO2019150785A1 (ja) * 2018-02-02 2019-08-08 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、撮像装置、および、固体撮像素子の制御方法
JP2020088480A (ja) * 2018-11-19 2020-06-04 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、および、撮像装置
JP2020088724A (ja) * 2018-11-29 2020-06-04 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、撮像装置、および、固体撮像素子の制御方法
JP2021048554A (ja) * 2019-09-20 2021-03-25 ソニーセミコンダクタソリューションズ株式会社 撮像装置、撮像制御方法、プログラム
JP7699058B2 (ja) * 2019-12-26 2025-06-26 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、および、撮像装置
US12192659B2 (en) * 2020-02-26 2025-01-07 Sony Semiconductor Solutions Corporation Solid-state imaging element, imaging device, and method for controlling solid-state imaging element
JP7626676B2 (ja) * 2021-07-05 2025-02-04 浜松ホトニクス株式会社 放射線画像取得装置、放射線画像取得システム、及び放射線画像取得方法
CN114488268A (zh) * 2021-12-28 2022-05-13 中国原子能科学研究院 一种辐射类型甄别系统及方法
JP2025527085A (ja) * 2022-07-21 2025-08-20 エーエスエムエル ネザーランズ ビー．ブイ． 検査中に検出器上の粒子を計数するシステム及び方法
WO2025134461A1 (ja) * 2023-12-22 2025-06-26 ソニーセミコンダクタソリューションズ株式会社 光検出装置

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1128661A1 (fr) * 2000-02-22 2001-08-29 Asulab S.A. Procédé permettant d'opérer un capteur d'image CMOS
JP4114717B2 (ja) 2002-08-09 2008-07-09 浜松ホトニクス株式会社 Ｃｔ装置
IL151634A0 (en) * 2002-09-05 2003-04-10 Real Time Radiography Ltd Direct detection of high energy single photons
JP2004108796A (ja) 2002-09-13 2004-04-08 Aloka Co Ltd 放射線測定装置
JP4582022B2 (ja) 2002-10-07 2010-11-17 株式会社日立製作所 放射線検出器，放射線検出素子及び放射線撮像装置
EP1579246A1 (en) 2002-11-27 2005-09-28 Koninklijke Philips Electronics N.V. Gamma camera with dynamic threshold
EP1875271B1 (en) * 2005-04-22 2011-06-22 Koninklijke Philips Electronics N.V. Digital silicon photomultiplier for tof-pet
US7659517B2 (en) * 2007-01-31 2010-02-09 Cypress Semiconductor Corporation Method and apparatus for triggering image acquisition in radiography
US7763837B2 (en) * 2007-11-20 2010-07-27 Aptina Imaging Corporation Method and apparatus for controlling anti-blooming timing to reduce effects of dark current
EP2587794B1 (en) * 2008-04-07 2022-05-04 Cmosis NV Pixel and pixel array with global shutter
US20100074396A1 (en) * 2008-07-07 2010-03-25 Siemens Medical Solutions Usa, Inc. Medical imaging with black silicon photodetector
JP2010098516A (ja) * 2008-10-16 2010-04-30 Sony Corp 撮像素子およびその制御方法並びにカメラ
FR2939999B1 (fr) * 2008-12-12 2011-02-25 E2V Semiconductors Capteur d'image a double transfert de charges pour grande dynamique et procede de lecture
JP5331557B2 (ja) * 2009-04-23 2013-10-30 オリンパス株式会社 固体撮像装置及びカメラシステム
JP2011024773A (ja) 2009-07-24 2011-02-10 National Institute Of Advanced Industrial Science & Technology Ｘ線成分計測装置
JP5521721B2 (ja) * 2009-08-28 2014-06-18 ソニー株式会社 撮像素子およびカメラシステム
TWI441512B (zh) 2009-10-01 2014-06-11 Sony Corp 影像取得裝置及照相機系統
EP2405663A1 (en) * 2010-06-15 2012-01-11 Thomson Licensing Method of driving an image sensor
JP5718069B2 (ja) * 2011-01-18 2015-05-13 オリンパス株式会社 固体撮像装置および撮像装置
US9462190B2 (en) * 2011-12-09 2016-10-04 Sony Corporation Imaging apparatus, an electronic device, and imaging method to uniformize distribution of incident light, and a photostimulated luminescence detection scanner
JP2013131516A (ja) * 2011-12-20 2013-07-04 Sony Corp 固体撮像装置、固体撮像装置の製造方法、及び、電子機器
WO2013099723A1 (ja) * 2011-12-27 2013-07-04 ソニー株式会社 撮像素子、撮像装置、電子機器および撮像方法

Also Published As

Publication number Publication date
US20160241795A1 (en) 2016-08-18
WO2015052864A1 (en) 2015-04-16
CN105659585A (zh) 2016-06-08
EP3055991A1 (en) 2016-08-17
CN105659585B (zh) 2019-06-07
JP2015076773A (ja) 2015-04-20
KR20160067848A (ko) 2016-06-14
TW201515204A (zh) 2015-04-16

Similar Documents

Publication Publication Date Title
JP6087780B2 (ja) 撮像素子、放射線検出装置および撮像素子の制御方法
US9568618B2 (en) Semiconductor photodetector and radial ray detector
JP6984417B2 (ja) 撮像素子および駆動方法、並びに電子機器
JP6821596B2 (ja) 光パルス検出装置、光パルス検出方法、放射線計数装置、および生体検査装置
JP6573667B2 (ja) 混合型光子計数／アナログ出力モードで動作可能なｘ線検出器
TWI638180B (zh) 成像器件及電子裝置
CN103875236B (zh) 图像拾取设备以及摄像机系统
JP6634017B2 (ja) 画素回路、半導体光検出装置および放射線計数装置
WO2014050343A1 (ja) 撮像素子および電子機器
JPWO2013084839A1 (ja) 撮像装置、電子機器、輝尽発光検出スキャナーおよび撮像方法
US7592577B1 (en) Self-triggering CMOS imaging array utilizing guard region structures as light detectors
JP6353300B2 (ja) 画素回路、半導体光検出装置および放射線計数装置
WO2018232370A1 (en) Counting and integrating pixels, detectors, and methods
JP2016042650A (ja) 半導体光検出装置、放射線計数装置、および、半導体光検出装置の制御方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20151215

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20151215

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A712

Effective date: 20160720

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20160721

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20160920

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20161025

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20161128

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20170110

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20170202

R150 Certificate of patent or registration of utility model

Ref document number: 6087780

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees