KR20160054514A - 벌크 확산 결정 성장 방법 - Google Patents

벌크 확산 결정 성장 방법 Download PDF

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Publication number
KR20160054514A
KR20160054514A KR1020167008428A KR20167008428A KR20160054514A KR 20160054514 A KR20160054514 A KR 20160054514A KR 1020167008428 A KR1020167008428 A KR 1020167008428A KR 20167008428 A KR20167008428 A KR 20167008428A KR 20160054514 A KR20160054514 A KR 20160054514A
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South Korea
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filler
aln
crucible
species
porous
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KR1020167008428A
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English (en)
Korean (ko)
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제이슨 슈미트
제러미 존스
펭 루
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니트라이드 솔루션즈 인크.
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Publication of KR20160054514A publication Critical patent/KR20160054514A/ko

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C30B23/005—Controlling or regulating flux or flow of depositing species or vapour
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020167008428A 2013-09-04 2014-09-04 벌크 확산 결정 성장 방법 KR20160054514A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361873729P 2013-09-04 2013-09-04
US61/873,729 2013-09-04
PCT/US2014/054071 WO2015038398A1 (en) 2013-09-04 2014-09-04 Bulk diffusion crystal growth process

Publications (1)

Publication Number Publication Date
KR20160054514A true KR20160054514A (ko) 2016-05-16

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020167008428A KR20160054514A (ko) 2013-09-04 2014-09-04 벌크 확산 결정 성장 방법

Country Status (6)

Country Link
US (1) US9856577B2 (ja)
EP (1) EP3041798A4 (ja)
JP (2) JP6521533B2 (ja)
KR (1) KR20160054514A (ja)
TW (1) TWI684680B (ja)
WO (1) WO2015038398A1 (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180127890A1 (en) * 2013-09-04 2018-05-10 Nitride Solutions, Inc. Bulk diffusion crystal growth of nitride crystal
CN107964682B (zh) * 2016-10-20 2019-05-14 中国人民大学 一种以包裹泡沫材料的方式制备单层六方氮化硼大单晶的方法
CN107964680B (zh) * 2016-10-20 2019-05-14 中国人民大学 一种制备单层六方氮化硼大单晶的方法
CN107354503B (zh) * 2017-07-12 2019-05-03 吴晨 一种晶体生长装置及其组装方法
WO2019136100A1 (en) * 2018-01-02 2019-07-11 Nitride Solutions, Inc. Bulk diffusion crystal growth of nitride crystal
CN110670135B (zh) * 2018-07-03 2021-03-05 中国科学院福建物质结构研究所 一种氮化镓单晶材料及其制备方法
DE102018129492B4 (de) 2018-11-22 2022-04-28 Ebner Industrieofenbau Gmbh Vorrichtung und Verfahren zum Züchten von Kristallen

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3024965A (en) 1957-10-08 1962-03-13 Milleron Norman Apparatus for vacuum deposition of metals
DE2338338C3 (de) 1973-07-27 1979-04-12 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum Dotieren beim tiegelfreien Zonenschmelzen eines Halbleiterkristallstabes
US4052538A (en) * 1976-04-19 1977-10-04 General Motors Corporation Method of making sodium beta-alumina powder and sintered articles
US4193954A (en) * 1978-03-27 1980-03-18 Engelhard Minerals & Chemicals Corporation Beta alumina manufacture
US4762576A (en) 1982-09-29 1988-08-09 The United States Of America As Represented By The Secretary Of The Army Close space epitaxy process
US4650541A (en) 1984-09-12 1987-03-17 The United States Of America As Represented By The United States Department Of Energy Apparatus and method for the horizontal, crucible-free growth of silicon sheet crystals
US4895765A (en) 1985-09-30 1990-01-23 Union Carbide Corporation Titanium nitride and zirconium nitride coating compositions, coated articles and methods of manufacture
CA1329461C (en) * 1987-04-14 1994-05-17 Alcan International Limited Process of producing aluminum and titanium nitrides
JPH0751478B2 (ja) 1989-11-24 1995-06-05 新技術事業団 化合物結晶のエピタキシャル成長方法
US5356579A (en) * 1990-05-18 1994-10-18 E. Khashoggi Industries Methods of manufacture and use for low density hydraulically bonded cement compositions
US5096860A (en) * 1990-05-25 1992-03-17 Alcan International Limited Process for producing unagglomerated single crystals of aluminum nitride
US5633192A (en) 1991-03-18 1997-05-27 Boston University Method for epitaxially growing gallium nitride layers
DE19510318B4 (de) 1995-03-22 2004-02-19 Deutsches Zentrum für Luft- und Raumfahrt e.V. Verfahren und Vorrichtung zur Herstellung epitaktischer Schichten
US5710382A (en) * 1995-09-26 1998-01-20 The Dow Chemical Company Aluminum nitride, aluminum nitride containing solid solutions and aluminum nitride composites prepared by combustion synthesis and sintered bodies prepared therefrom
US6110279A (en) 1996-03-29 2000-08-29 Denso Corporation Method of producing single-crystal silicon carbide
US6066290A (en) * 1996-07-26 2000-05-23 The Pennsylvania State Research Foundation Method and apparatus for transporting green work pieces through a microwave sintering system
US6015517A (en) * 1998-04-08 2000-01-18 International Business Machines Corporation Controlled porosity for ceramic contact sheets and setter tiles
DE19841012C1 (de) 1998-09-08 2000-01-13 Fraunhofer Ges Forschung Einrichtung zum plasmaaktivierten Bedampfen im Vakuum
US6063185A (en) * 1998-10-09 2000-05-16 Cree, Inc. Production of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride: silicon carbide alloy
JP2004503680A (ja) 2000-07-17 2004-02-05 コモンウェルス　サイエンティフィック　アンド　インダストリアル　リサーチ　オーガニゼーション 炭素及び炭素系材料の製造
US20060005763A1 (en) * 2001-12-24 2006-01-12 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
DE10335538A1 (de) * 2003-07-31 2005-02-24 Sicrystal Ag Verfahren und Vorrichtung zur AIN-Einkristall-Herstellung mit gasdurchlässiger Tiegelwand
US20050229856A1 (en) 2004-04-20 2005-10-20 Malik Roger J Means and method for a liquid metal evaporation source with integral level sensor and external reservoir
US20080193363A1 (en) * 2004-08-20 2008-08-14 Mitsubishi Chemical Corporation Metal Nitrides and Process for Production Thereof
WO2006106875A1 (ja) 2005-03-30 2006-10-12 Fukuda Crystal Laboratory ガレート単結晶及びその作成方法並びに高温用圧電素子及び高温用圧電センサー
KR101346501B1 (ko) * 2006-03-29 2013-12-31 스미토모덴키고교가부시키가이샤 Ⅲ족 질화물 단결정의 성장 방법
US9034103B2 (en) 2006-03-30 2015-05-19 Crystal Is, Inc. Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them
US8361227B2 (en) 2006-09-26 2013-01-29 Ii-Vi Incorporated Silicon carbide single crystals with low boron content
CN101443488B (zh) 2006-05-08 2013-03-27 弗赖贝格化合物原料有限公司 制备ⅲ-n体晶和自支撑ⅲ-n衬底的方法以及ⅲ-n体晶和自支撑ⅲ-n衬底
US7494546B1 (en) 2006-07-14 2009-02-24 Blue Wave Semicodnuctors, Inc. Method of growing insulating, semiconducting, and conducting group III-nitride thin films and coatings, and use as radiation hard coatings for electronics and optoelectronic devices
US8197596B2 (en) * 2006-07-28 2012-06-12 Pronomic Industry Ab Crystal growth method and reactor design
US7727874B2 (en) 2007-09-14 2010-06-01 Kyma Technologies, Inc. Non-polar and semi-polar GaN substrates, devices, and methods for making them
EP2261401A4 (en) 2008-03-03 2012-11-28 Mitsubishi Chem Corp NITRIDE-SEMICONDUCTOR CRYSTAL AND MANUFACTURING METHOD THEREFOR
US8329565B2 (en) 2008-11-14 2012-12-11 Soitec Methods for improving the quality of structures comprising semiconductor materials
DE102008064134B4 (de) 2008-12-19 2016-07-21 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Beschichtung von Gegenständen mittels eines Niederdruckplasmas
KR20110135237A (ko) * 2010-06-10 2011-12-16 엘지디스플레이 주식회사 반도체 발광소자 및 그 제조방법
US8343449B1 (en) * 2011-06-28 2013-01-01 Nitride Solutions, Inc. Device and method for producing a tubular refractory metal compound structure
US8399367B2 (en) * 2011-06-28 2013-03-19 Nitride Solutions, Inc. Process for high-pressure nitrogen annealing of metal nitrides
US20130000545A1 (en) 2011-06-28 2013-01-03 Nitride Solutions Inc. Device and method for producing bulk single crystals
CN104040675A (zh) 2011-09-29 2014-09-10 氮化物处理股份有限公司 无机材料、制作其的方法和装置、及其使用

Also Published As

Publication number Publication date
WO2015038398A1 (en) 2015-03-19
JP2016532628A (ja) 2016-10-20
EP3041798A4 (en) 2017-04-26
US9856577B2 (en) 2018-01-02
JP2019031439A (ja) 2019-02-28
TWI684680B (zh) 2020-02-11
TW201534776A (zh) 2015-09-16
EP3041798A1 (en) 2016-07-13
JP6521533B2 (ja) 2019-06-05
US20150059641A1 (en) 2015-03-05

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