KR20160054333A - Light emitting device and light emitting device package - Google Patents

Abstract

According to an embodiment of the present invention, a light emitting device comprises: a light emitting structure layer including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer arranged under the first conductivity type semiconductor layer, and an active layer placed between the first and second conductivity type semiconductor layers; a plurality of holes which are configured to have a first width, respectively and are arranged in the first conductivity type semiconductor layer, the second conductivity type semiconductor layer, and the active layer; a recess having the wider width than the first width in the first conductivity type semiconductor layer and coupled to at least one among a plurality of first holes; coupling electrodes, each of which is arranged in each of the holes; and a contact electrode arranged in the recess and coupled to the coupling electrode. An embodiment of the present invention is able to improve reliability of a light emitting device.

Description

[0001] LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE [0002]

Embodiments relate to a light emitting device and a light emitting device package.

A light emitting diode (LED) is a light emitting element that converts current into light. Recently, light emitting diodes have been increasingly used as a light source for displays, a light source for automobiles, and a light source for illumination because the luminance gradually increases.

A high output light emitting chip capable of realizing full color by generating short wavelength light such as blue or green has been developed. By applying a phosphor that absorbs a part of the light output from the light emitting chip and outputs a wavelength different from the wavelength of the light, the light emitting diodes of various colors can be combined and a light emitting diode emitting white light can be realized Do.

An embodiment provides a light emitting device having an electrode structure connected in a light emitting structure layer.

Embodiments provide a light emitting device in which an electrode is disposed through a plurality of holes in a light emitting structure layer and a recess connected to the hole, and the width of the recess is larger than the width of the hole.

The embodiment provides a light emitting device in which the contact area between the first conductivity type semiconductor layer and the electrode in the light emitting structure layer is improved.

A light emitting device according to an embodiment includes a first conductive semiconductor layer, a second conductive semiconductor layer disposed under the first conductive semiconductor layer, And a light emitting structure layer including an active layer between the first and second conductivity type semiconductor layers; A plurality of holes arranged in the second conductivity type semiconductor layer, the active layer and the second conductivity type semiconductor layer and having a first width; A recess in the first conductive semiconductor layer having a width wider than the first width and connected to at least one of the plurality of first holes; A connection electrode disposed in each of the plurality of holes; And a contact electrode disposed in the recess and connected to the connection electrode.

The embodiment can diffuse the current by increasing the area of the electrode contacted within the first conductivity type semiconductor layer.

The embodiment can improve the electrical characteristics of the light emitting element.

The embodiment can improve the heat radiation characteristics of the light emitting device.

The embodiment can improve the reliability of the light emitting device.

1 is a plan view showing a light emitting device according to a first embodiment.
Fig. 2 is a cross-sectional view of the light-emitting device of Fig. 1 on the AA side.
3 (A) - (C) are views showing other shapes of holes and recesses in FIG. 2. FIG.
4 is a side sectional view showing a light emitting device according to the second embodiment.
5 is a side sectional view showing a light emitting device according to the third embodiment.
6 is a side sectional view showing a light emitting device according to a fourth embodiment.
8 is a side sectional view showing a light emitting device according to a fifth embodiment.
9 is a side sectional view showing a light emitting device according to a sixth embodiment.
10 and 11 are plan views showing another example of the recess in the light emitting device according to the embodiment.
12 to 20 are views showing a manufacturing process of the light emitting device according to the first embodiment.
21 is a view illustrating a light emitting device package having a light emitting device according to an embodiment.

Hereinafter, a light emitting device according to an embodiment will be described in detail with reference to the accompanying drawings. In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure may be formed "on" or "under" a substrate, each layer The terms " on "and " under " include both being formed" directly "or" indirectly " Also, the criteria for top, bottom, or bottom of each layer will be described with reference to the drawings.

FIG. 1 is a plan view showing a light emitting device according to a first embodiment, and FIG. 2 is a sectional view taken on the A-A side of the light emitting device of FIG.

1 and 2, a light emitting device 100 includes a light emitting structure layer 135, a first electrode layer 150 and a second electrode layer 170 disposed below the light emitting structure layer 135, A hole 141 and a recess 145 disposed in the structure layer 135, a first pad 151 connected to the first electrode layer 150, a first pad 151 connected to the first and second electrode layers 150 and 170 A connection electrode 171 disposed in the hole 141 and a contact electrode 172 disposed in the recess 145. The insulating layer 162 is disposed between the insulating layer 162 and the insulating layer 162,

The light emitting device 100 includes an LED using a compound semiconductor of a plurality of compound semiconductor layers such as Group II-VI or Group III-V elements, and the LED emits light such as blue, green, or red Lt; RTI ID = 0.0 > UV < / RTI > LED. The emitted light of the LED may be implemented using various semiconductors within the technical scope of the embodiment, but the present invention is not limited thereto.

The light emitting structure layer 135 includes a first conductive semiconductor layer 110, a second conductive semiconductor layer 130 disposed below the first conductive semiconductor layer 110, Type semiconductor layer 110 and the active layer 120 disposed between the first and second semiconductor layers 110 and 130.

The first conductive semiconductor layer 110 may be a compound semiconductor of a group III-V element doped with a first conductive dopant, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP. The first conductive semiconductor layer 110 may be formed of a semiconductor layer having a composition formula of In _x Al _y Ga _1-xy N (0? X? 1, 0? _Y? 1, 0? _X + y? 1) . The first conductive semiconductor layer 110 may be an n-type semiconductor layer, and the first conductive dopant may include n-type dopants such as Si, Ge, Sn, Se, and Te.

The first conductive semiconductor layer 110 includes at least two layers and includes a first semiconductor layer 111 and a second semiconductor layer 113 below the first semiconductor layer 111.

The first semiconductor layer 111 and the second semiconductor layer 113 may be formed of a compound semiconductor of a group III-V element doped with a first conductivity type dopant such as an n-type dopant such as GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP.

The first semiconductor layer 111 and the second semiconductor layer 113 have the same dopant concentration or the dopant concentration added to the second semiconductor layer 113 is higher than the dopant concentration of the first semiconductor layer 111, Lt; / RTI > For example, when the dopant concentration added to the second semiconductor layer 113 is lower than the dopant concentration added to the first semiconductor layer 111, 2 semiconductor layer 113 as shown in FIG.

In addition, the semiconductor material of the first semiconductor layer 111 and the semiconductor material of the second semiconductor layer 113 may be the same or different. If the first semiconductor layer 111 and the second semiconductor layer 113 are made of the same material, damage to the semiconductor crystal quality can be prevented. In addition, when the first semiconductor layer 111 and the second semiconductor layer 113 are formed of different materials, the light extraction efficiency can be improved since they have different refractive indexes. For example, when the first semiconductor layer 111 is formed of a material having a lower refractive index than the second semiconductor layer 113, the light extraction efficiency can be improved.

At least one of the first semiconductor layer 111 and the second semiconductor layer 113 may have a superlattice structure using at least two layers different from each other. For example, the GaN / AlGaN or AlGaN / InGaN pair may be formed in two or more cycles, but the present invention is not limited thereto. Such a superlattice structure may block the dislocation defect transmitted to the active layer 120 or diffuse the current.

The upper surface of the first conductive semiconductor layer 110 may be formed as a flat surface or may include a light extracting structure such as a concavo-convex structure. The concavo-convex structure includes at least one of a hemispherical shape, a polygonal shape, a horn shape, a columnar shape, or a semi-elliptical shape in a side sectional shape. The light extracting structure may change the critical angle of light incident on the upper surface of the first conductive semiconductor layer 110 to improve the light extraction efficiency. The light extracting structure of the first conductivity type semiconductor layer 110 may be formed in the entire region or may be formed in a partial region, but the present invention is not limited thereto.

An active layer 120 is disposed under the first conductive semiconductor layer 110 and the active layer 120 may have a single well structure, a multiple well structure, a single quantum well structure, or a multiple quantum well structure. In addition, the active layer 120 may include a quantum wire structure or a quantum dot structure.

The active layer 120 may be formed with a period of a well layer and a barrier layer using a compound semiconductor material of group III-V elements. The well layer is formed in a semiconductor layer having a compositional formula of _{In x Al y Ga 1-xy} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1), and wherein the barrier layer is In _x And a semiconductor layer having a composition formula of Al _y Ga _1-xy N (0? X? 1, 0? _Y? 1, 0? X + y? 1) The barrier layer may be disposed of a material having a bandgap higher than the bandgap of the well layer.

The active layer 120 may include, for example, at least one period of the period of the InGaN well layer / GaN barrier layer, the period of the InGaN well layer / AlGaN barrier layer, and the period of the InGaN well layer / InGaN barrier layer .

A first conductive clad layer (not shown) may be disposed between the active layer 120 and the first conductive semiconductor layer 110, and between the active layer 120 and the second conductive semiconductor layer 130 The second conductivity type cladding layer and / or the undoped semiconductor layer may be formed. Any or all of the first and second conductivity type cladding layers may be formed of a GaN-based semiconductor, and the band gap thereof may be formed to be higher than the band gap of the barrier layer.

The second conductivity type semiconductor layer 130 is formed under the active layer 120 and the second conductivity type semiconductor layer 130 is a compound semiconductor of a group III-V element doped with a second conductivity type dopant, , GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP and the like. The second conductive semiconductor layer 130 may be formed of a semiconductor layer having a composition formula of In _x Al _y Ga _1-xy N (0? X? 1, 0? _Y? 1, 0? _X + y? .

The second conductivity type semiconductor layer 130 may be a p-type semiconductor layer, and the second conductivity type dopant may include a p-type dopant such as Mg, Zn, Ca, Sr, and Ba. The second conductive semiconductor layer 130 may be formed as a single layer or a multilayer, but is not limited thereto.

The second conductive semiconductor layer 130 may further include an electron blocking layer. For example, the electron blocking layer may include AlGaN or InAlGaN. The second conductive semiconductor layer 130 may have a band gap wider than the band gap of the barrier layer, .

A semiconductor layer of a first conductive type, for example, a semiconductor layer having a polarity opposite to that of the second conductive type may be further disposed under the second conductive type semiconductor layer 130. Meanwhile, as another example, the first conductive semiconductor layer 110 may be a p-type semiconductor layer, and the second conductive semiconductor layer 130 may be an n-type semiconductor layer. The light emitting structure layer 135 may include at least one of an n-p junction, a p-n junction, an n-p-n junction, and a p-n-p junction structure. In the following description, the structure in which the second conductivity type semiconductor layer 130 is disposed on the lowermost layer of the light emitting structure layer 135 will be described as an example. At least one side of the light emitting structure layer 135 may be perpendicular or inclined to the lower surface of the light emitting structure layer 135.

As shown in FIGS. 1 and 2, the light emitting structure layer 135 includes holes 141. A plurality of the holes 141 may be spaced apart from each other. The holes 141 may be vertically arranged in the light emitting structure layer 135. The hole 141 may extend from the lower surface of the light emitting structure layer 135 to the lower portion of the first conductivity type semiconductor layer 110 and may include a second conductivity type semiconductor layer 130 and the active layer 120, As shown in FIG.

The first conductive semiconductor layer 110 includes a recess 145. The recess 145 may be connected to the hole 141. The hole 141 may have a first width D1 and the recess 145 may be disposed at a second width D2 that is wider than the first width D1.

3 shows another shape of the hole 141 and the recess 145. As shown in FIG. 3 (A) - (C) show the top view of holes and recesses. As shown in FIG. 2, the width of the recess 145 is larger than the width of the hole 141. The recess 145 may be wider than the width of the extension 161 of the insulation layer.

As shown in FIG. 3A, the shape of the hole 141 and the outer shape of the recess 145 may be the same. For example, the shapes of the holes 141 and the recesses 145 may be circular shapes having different widths.

The shape of the hole 141 and the shape of the recess 145 may be different from each other, as shown in FIG. 3 (B). For example, the shape of the hole 141 may be a polygonal shape, for example, a hexagonal shape, and the shape of the recess 145 may be polygonal, e.g., rectangular.

The shape of the hole 141 and the shape of the recess 145 may be polygonal as shown in FIG. 3C. For example, the shape of the hole 141 and the recess 145 may be a hexagonal shape . The shapes of the holes 141 and the recesses 145 according to the embodiments may be the same or different from each other and each may include at least one of circular, elliptical, or polygonal shapes, but the present invention is not limited thereto .

As another example, as shown in FIG. 10, the recess 145A may be connected to adjacent holes 141 of the plurality of holes 141. FIG. The recess 145A may be disposed in the region of the adjacent holes 161. [ The recess 145A may include a stripe shape. A plurality of the recesses 145A may be arranged in parallel with each other in the first conductivity type semiconductor layer 110. [ The recess 145A may be arranged parallel to at least one side S1 of the light emitting structure layer.

As another example, the recess 145A may be connected to at least two or three or more adjacent hole regions out of the plurality of holes 141, as shown in FIG. The arrangement direction of the recesses 145A may be arranged in a direction away from the first pad 151 or in a direction opposite to the first pad 151. The second width D2 of the recess 145A is wider than the first width D1 of the hole 141 and the length D4 of the recess 145A is greater than the width D2 of the adjacent hole 141 (D3). In this case, the distance D3 between the adjacent holes 141 may mean a straight line distance between the centers of the adjacent holes 141. As a result, the contact area with the contact electrode 172 disposed in the recess 145A is increased to diffuse the current supplied to the first conductive type semiconductor layer 110. [

As shown in FIGS. 1 and 2, the first and second electrode layers 150 and 170 are disposed under the light emitting structure layer 135. The first electrode layer 150 is electrically connected to the second conductive semiconductor layer 130 and the second electrode layer 170 is electrically connected to the first conductive semiconductor layer 110. The first and second electrode layers 150 and 170 are disposed so as to overlap each other in the vertical direction. The light emitting structure layer 135 may be vertically overlapped with the first and second electrode layers 150 and 170.

The first electrode layer 150 includes a first contact layer 148, a reflective layer 152 and a diffusion layer 154. The first contact layer 148 is disposed under the light emitting structure layer 135, And is in contact with the lower surface of the second conductivity type semiconductor layer 130. The reflective layer 152 is disposed under the first contact layer 148 and reflects light incident through the first contact layer 148. The diffusion layer 154 is disposed under the reflective layer 152 and diffuses the current supplied from the first pad 151 and supplies the diffusion layer 152 with the current. The width of at least one of the first contact layer 148 and the reflective layer 152 may be equal to or wider than the bottom width of the light emitting structure layer 135.

The first contact layer 148 includes at least one conductive material, and may be a single layer or multiple layers. The first contact layer 148 may have an ohmic characteristic and be disposed in a layer below the second conductive semiconductor layer 130 or in a pattern having a plurality of holes. The material of the first contact layer 148 may include at least one of a metal, a metal oxide, and a metal nitride material. The first contact layer 148 includes a transparent material such as ITO (indium tin oxide), IZO (indium zinc oxide), IZON (indium zinc nitride), IZTO (indium zinc tin oxide), IAZO zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, RuOx / / IrOx / Au, and Ni / IrOx / Au / ITO. As another example, the first contact layer 148 may be formed of one or more of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, Lt; / RTI > layer.

 The reflective layer 152 may include one or more layers selected from the group consisting of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, Layer.

The diffusion layer 154 may be formed of a metal such as Sn, Ga, In, Bi, Cu, Ni, Ag, Mo, Al, Au, Nb, W, Ti, Cr, Ta, Al, Pd, And at least one of these optional alloys. The diffusion layer 154 may function as a current diffusion layer. The diffusing layer 154 may include a metal other than the reflective layer 152, but is not limited thereto. The diffusion layer 154 includes a contact portion 155 and the contact portion 155 may be disposed outside the side surface of the light emitting structure layer 135 and below the first pad 151. The first electrode layer 150 electrically connects the first pad 151 and the second conductivity type semiconductor layer 130.

The first pad 151 is disposed in an outer region 137 of the light emitting structure layer 135. The first pad 151 may include at least one of an alloy of any one or a plurality of materials selected from the group consisting of Cr, Ti, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag, And may be formed as a single layer or a multilayer, but is not limited thereto. The holes 141 may be disposed through the first electrode layer 150.

The second electrode layer 170 includes at least one of a second contact layer 174, a bonding layer 176, and a conductive support member 178. The second contact layer 174 may include at least one of a metal, a metal oxide, and a metal nitride. The second contact layer 174 may include at least one of ITO (indium tin oxide), IZO (indium zinc oxide), IZON (IZO nitride) tin oxide (IZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO) , RuOx, RuOx / ITO, Ni / IrOx / Au, and Ni / IrOx / Au / ITO, Cr, Ti, Co, Ge, Cu, Ag, Ni, Al, Rh, Pd, Pt, Au, Hf, and alloys composed of two or more of these alloys.

The second contact layer 174 may include a connection electrode 171 and the connection electrode 171 may be disposed in the hole 141. The connection electrode 171 may protrude from the second contact layer 174 to a lower portion of the first conductive type semiconductor layer 110. The connection electrode 171 is disposed in the hole 141 disposed in the first electrode layer 150, the second conductivity type semiconductor layer 130, and the active layer 120, For example, on the second semiconductor layer 113 below the layer 110. [ The connection electrode 171 may protrude in the vertical direction with respect to the lower surface of the first electrode layer 150, and the peripheral surface thereof may be a sloped surface or a vertical surface. The connecting electrode 171 may have a circular shape as shown in FIG. 1 or may have a polygonal shape as shown in FIG. 3 (B) and FIG. 3 (C).

The upper surface of the connection electrode 171 may be disposed between the upper surface of the active layer 120 and the upper surface of the first conductive semiconductor layer 110. Since the upper surface of the connection electrode 171 is disposed above the upper surface of the active layer 120, the light emitting area of the active layer 120 can be prevented from being reduced.

The contact electrode 172 is disposed within the recess 145. The contact electrode 172 may be connected to the connection electrode 171 or may be integrally formed with the connection electrode 171. The contact electrode 172 may have a width wider than the width of the connection electrode 171. The width of the contact electrode 172 may be the same as the width of the recess 145 or may be wider than the first width D1 of the hole 141. [ The contact electrode 172 may be disposed in the second semiconductor layer 113 or may be disposed on the upper surface of the active layer 120.

The contact electrode 172 may be in contact with the first conductive semiconductor layer 110, but the present invention is not limited thereto. The contact electrode 172 may be disposed in the second semiconductor layer 113 and may be in contact with the second semiconductor layer 113.

An electrode contact layer 173 may be disposed between the contact electrode 172 and the first conductive semiconductor layer 110. The electrode contact layer 173 may be disposed in the recess 145 and may be in ohmic contact with the first conductive semiconductor layer 110. The electrode contact layer 173 may be in contact with the lower surface of the first semiconductor layer 111. A part of the electrode contact layer 173 may be in contact with the second semiconductor layer 113. The electrode contact layer 173 may include at least one of a metal, a metal oxide, and a metal nitride. Examples of the electrode contact layer 173 include ITO (indium tin oxide), IZO (indium zinc oxide), IZON (IZO nitride) oxide, indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO) RuOx, ITO, Ni / IrOx / Au, and Ni / IrOx / Au / ITO, Cr, Ti, Co, Ge, Cu, Ag, Ni, Al, Rh, Pd, Ir, Ru, , Au, Hf and a material composed of two or more of these alloys. The electrode contact layer 173 may be in contact with the Ga-face surface when the first conductivity type semiconductor layer 110 includes a Ga element. The electrode contact layer 173 and the contact electrode 172 are connected to the plurality of connection electrodes 171 disposed through the adjacent holes 141 when disposed in the recess 145 as shown in FIGS. . The side surface area of the contact electrode 172 may be larger than the side surface area of the connection electrode 171 and face the first conductive type semiconductor layer 110. Accordingly, the current supplied to the first conductivity type semiconductor layer 110 can be diffused and transferred to the active layer 120.

The insulating layer 162 is disposed between the first electrode layer 150 and the second electrode layer 170 to electrically isolate the first and second electrode layers 150 and 170 from each other. The insulating layer 162 is disposed between the diffusion layer 154 of the first electrode layer 150 and the second contact layer 174 of the second electrode layer 170, for example.

The extended portion 161 of the insulating layer 162 may be disposed on the surface of the hole 141. The extension portion 161 includes a connection hole 143 therein. The extended portion 161 of the insulating layer 162 may be disposed between the light emitting structure layer 135 and the connection electrode 171. The connection electrode 171 may be disposed in the connection hole 143. The extension 161 is formed on the second semiconductor layer 113 of the first electrode layer 150, the second conductivity type semiconductor layer 130, the active layer 120 and the first conductivity type semiconductor layer 110, And can be disposed on the surface of the disposed hole 141. The insulating layer 162 may be formed of a material selected from SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , and TiO ₂ .

A bonding layer 176 is disposed under the second contact layer 174 and a conductive supporting member 178 is disposed under the bonding layer 176. [ The bonding layer 176 includes at least one metal layer or conductive layer, and includes a barrier metal and / or a bonding metal. The material of the bonding layer 176 may be selected from the group consisting of Sn, Ga, In, Bi, Cu, Ni, Ag, Mo, Al, Au, Nb, W, Ti, Cr, Ta, Al, Pd, , Al-Si, Ag-Cd, Au-Sb, Al-Zn, Al-Mg, Al-Ge, Pd-Pb, Ag-Sb, Au- Ag-Cu-Zn, Ag-Cu-Zn, Au-Si, Au-Ge, Au-Ni, Au-Cu, , At least one of Au-Ag-Cu, Cu-Cu2O, Cu-Zn, Cu-P, Ni-B, Ni-Mn-Pd, Ni-P and Pd-Ni. Do not.

The conductive support member 178 includes a conductive substrate. The conductive support member 178 may be at least one of copper (Cu), gold (Au), nickel (Ni), molybdenum (Mo), and copper-tungsten . Or the conductive support member 178 may be implemented in a substrate such as a wafer carrier, Si, Ge, GaAs, ZnO , SiC, and _{SiGe, Ga 2 O 3, GaN} . Or the conductive support member 178 may be embodied as a conductive sheet.

4 is a side sectional view showing a light emitting device according to the second embodiment. In describing FIG. 4, the same parts as those described in the first embodiment will be described with reference to the description of the first embodiment.

4, the light emitting device includes a light emitting structure layer 135, a first electrode layer 150 and a second electrode layer 170 disposed under the light emitting structure layer 135, A first pad 151 connected to the first electrode layer 150, an insulating layer 162 disposed between the first and second electrode layers 150 and 170, A connection electrode 171 disposed in the hole 141, and a contact electrode 172 disposed in the recess 145.

The outer surface of the recess 145 may be disposed with an inclined surface. The recess 145 may have a width equal to or greater than the first width D1 of the hole 141. [ The width of the recess 145 may be gradually widened closer to the upper surface of the first conductive semiconductor layer 110. The width of the recess 145 may gradually increase from an area connected to the hole 141 to an upper surface of the first conductive semiconductor layer 110.

A contact electrode 172 connected to the connection electrode 171 may be disposed in the recess 145. An electrode contact layer 173 may be disposed between the contact electrode 172 and the first conductive semiconductor layer 110. The electrode contact layer 173 may be disposed on the surface of the recess 145. The electrode contact layer 173 may be in contact with the lower surface of the first semiconductor layer 111 of the first conductivity type semiconductor layer 110. The electrode contact layer 173 may be in contact with the second semiconductor layer 113 of the first conductive type semiconductor layer 110. The electrode contact layer 173 may be in contact with the extended portion 161 of the insulating layer 162, but the present invention is not limited thereto.

The shape of the top view of the recess 145 and the contact electrode 172 will be described with reference to FIG. 1, FIG. 3, FIG. 10, or FIG.

The upper surface of the first conductive semiconductor layer 110 may have an uneven surface 112. The uneven surface 112 may be disposed on the first conductive semiconductor layer 110 to improve light extraction efficiency.

5 is a side sectional view showing a light emitting device according to the third embodiment. In describing FIG. 5, the same portions as those described above will be referred to the description of the embodiment (s) disclosed above.

5, the light emitting device includes a light emitting structure layer 135, a first electrode layer 150 and a second electrode layer 170 disposed under the light emitting structure layer 135, A first pad 151 connected to the first electrode layer 150, an insulating layer 162 disposed between the first and second electrode layers 150 and 170, A connection electrode 171 disposed in the hole 141, and a contact electrode 172 disposed in the recess 145.

The recess 145, the contact electrode 172 and the electrode contact layer 173 may be disposed in the first semiconductor layer 111 and the second semiconductor layer 113 of the first conductivity type semiconductor layer 110 . The width of the recess 145 is gradually widened toward the interface between the first and second semiconductor layers 111 and 113, and the width of the recess 145 may gradually decrease from the interface. If the first and second semiconductor layers 111 and 113 are made of the same semiconductor, the interface may not exist. In this case, the recess 145 has the largest center area, Can be narrowed. An electrode contact layer 173 may be disposed on the surface of the recess 145. The electrode contact layer 173 may be disposed between the contact electrode 172 and the first conductive semiconductor layer 110. The electrode contact layer 173 may be disposed in the second semiconductor layer 113 and the first semiconductor layer 111. A contact electrode 172 may be disposed on the recess 145 and the contact electrode 172 may be connected to the connection electrode 171 and may be electrically connected to the first conductive semiconductor layer 110 . The contact electrode 172 may be disposed in the first semiconductor layer 111 and the second semiconductor layer 113.

6 is a side sectional view showing a light emitting device according to a fourth embodiment. In describing FIG. 6, the same portions as those described above will be referred to the description of the embodiment (s) disclosed above.

6, the light emitting device includes a light emitting structure layer 135, a first electrode layer 150 and a second electrode layer 170 disposed under the light emitting structure layer 135, A first pad 151 connected to the first electrode layer 150, an insulating layer 162 disposed between the first and second electrode layers 150 and 170, A connection electrode 171 disposed in the hole 141A and a contact electrode 172 disposed in the recess 145. [

The width D5 of the hole 141A in the first conductivity type semiconductor layer 110 may be different from the first width D1 of the lower surface of the light emitting structure layer 135. [ For example, the width D5 of the hole 141A disposed in the first conductive semiconductor layer 110 may be a width D1 of the lower surface of the light emitting structure layer 135 or a width D1 of the light emitting structure layer 135 disposed in the first electrode layer 150 Can be narrower than the width D1 of the hole 141A. The width of the hole 141A disposed in the active layer 120 is narrower than the width D1 of the hole 141A disposed in the first electrode layer 150, May be arranged to be larger than the width (D5) of the protrusion 141A. Or the hole 141A may become gradually narrower toward the upper surface of the first conductive type semiconductor layer 110. [ The surface of the hole 141A may include an inclined surface with respect to a lower surface of the light emitting structure layer 135. [ Since the width of the hole 141A becomes narrower toward the first conductivity type semiconductor layer 110, the area of the active layer 120 may be wider than that of the first embodiment.

The connection electrode 171 may be narrower in width than the bottom width and the contact electrode 172 may be disposed in the recess 145 and connected to the upper portion of the connection electrode 171, have.

7 is a side sectional view showing a light emitting device according to a fifth embodiment. In describing Fig. 7, the same portions as those described above will be referred to the description of the embodiment (s) disclosed above.

7, the light emitting device includes a light emitting structure layer 135, a first electrode layer 150 and a second electrode layer 170 disposed under the light emitting structure layer 135, A first pad 151 connected to the first electrode layer 150, an insulating layer 162 disposed between the first and second electrode layers 150 and 170, A connection electrode 171 disposed in the hole 141, and a contact electrode 172 disposed in the recess 145.

The insulating layer 162 may include an extension 161 disposed in the hole 141 and the surface of the extension 161 may have a roughness 62. The connecting electrode 171 may be disposed on the inner side of the extension 161 and the outer side of the connection electrode 171 may be disposed along the roughness 62 to have an uneven surface. The light extraction efficiency can be improved by the roughness 62.

At least one of the recesses 145 may be connected to at least one or more of the holes 141, and may be disposed as shown in FIG. 1, FIG. 3, FIG. 10, or FIG.

The recess 145 is formed with a contact electrode 172 connected to the connection electrode 171 disposed in the hole 141. The contact electrode 172 is wider than the width of the hole 141, The length of the contact electrode 172 may be longer than the length of the contact electrode 141, and the contact electrode 172 may be arranged as shown in FIG. 1, FIG. 3, FIG. 10, or FIG. The recess 145 includes an uneven surface 45. At least a part of the uneven surface 45 may be disposed in a region contacting the inner surface of the first conductive type semiconductor layer 110. The uneven surface 45 may increase the contact area between the recess 145 and the first conductive type semiconductor layer 110. The recess 145 may be disposed under the first semiconductor layer 111 and in the second semiconductor layer 113. The uneven surface 45 may be disposed in the first semiconductor layer 111 or may be disposed in an irregular structure at an interface between the first and second semiconductor layers 111 and 113. A contact electrode 172 may be disposed in the recess 145 and the contact electrode 172 may be connected to the connection electrode 171. An electrode contact layer 173 may be disposed between the contact electrode 172 and the first conductive semiconductor layer 110. The electrode contact layer 173 may be disposed on the uneven surface 45 of the recess 145. Accordingly, the contact area of the electrode contact layer 173 with the first conductivity type semiconductor layer 110 can be increased, and the forward voltage characteristic can be improved. When the first semiconductor layer 111 is made of AlGaN, the forward voltage is increased when the electrode contact layer 173 is in contact with the AlGaN. The forward voltage can be lowered due to the contact area, The degree of freedom in designing the semiconductor layer can be improved. The light intensity improving effect can be provided by the uneven surface 45.

The electrode contact layer 173 may be disposed as a concavo-convex layer. When the electrode contact layer 173 is a concavo-convex layer, the contact surface between the contact electrode 172 and the electrode contact layer 173 may be arranged as an uneven surface.

8 is a side sectional view showing a light emitting device according to a sixth embodiment. In describing Fig. 8, the same portions as those described above will be referred to the description of the embodiment (s) disclosed above.

8, the light emitting device includes a light emitting structure layer 135, a first electrode layer 150 and a second electrode layer 170 disposed under the light emitting structure layer 135, A first pad 151 connected to the first electrode layer 150, an insulating layer 162 disposed between the first and second electrode layers 150 and 170, A connection electrode 171 disposed in the hole 141, and a contact electrode 172 disposed in the recess 145.

A protective layer 193 is disposed on the surface of the light emitting structure layer 135. The protective layer 193 includes an insulating material. The upper surface of the first conductive semiconductor layer 110 of the light emitting structure layer 135 may be disposed as the uneven surface 112 and the uneven surface 112 may improve the light extraction efficiency. The protective layer 193 may be disposed on the uneven surface 112 in a concavo-convex shape, but the present invention is not limited thereto.

The passivation layer 193 may be connected to the channel layer 191 along the side surface of the light emitting structure layer 135. The channel layer 191 may be formed of an insulating material or a light-transmitting conductive layer. The light-transmitting conductive layer may include a metal oxide or a metal nitride, but is not limited thereto. The channel layer 191 includes an inner portion disposed around the lower surface of the second conductivity type semiconductor layer 130 and an outer portion protruding outward from the side surface of the light emitting structure layer 135. The channel layer 191 may be disposed around the first contact layer 148 of the first electrode layer 150. The outer side of the channel layer 191 may be in contact with the protective layer 193, but the present invention is not limited thereto. The channel layer 191 may not be formed.

The diffusion layer 154 of the first electrode layer 150 includes a contact portion 156 extending outwardly from a side surface of the light emitting structure layer 135. A first pad 151 is formed in a portion of the contact portion 156, Can be disposed. The contact portion 156 may be disposed around the reflective layer 152 of the first electrode layer 150. The contact portion 156 may contact the bottom surface of the second conductive semiconductor layer 130 when the channel layer 191 is not formed.

Since the upper surface of the contact portion 156 protrudes above the upper surface of the diffusion layer 154, the length of the wire (not shown) connected to the first pad 151 can be reduced and the external impact transmitted to the wire can be reduced .

9 is a side sectional view showing a light emitting device according to a seventh embodiment. In describing FIG. 9, the same portions as those described above will be referred to the description of the embodiment (s) disclosed above.

9, the light emitting device includes a light emitting structure layer 135, a first electrode layer 150 disposed under the light emitting structure layer 135, holes 141 disposed in the light emitting structure layer 135, A first pad 151 connected to the first electrode layer 150, an insulating layer 162 disposed under the first electrode layer 150, and a second pad 151 disposed under the insulating layer 162 A second contact layer 174 disposed under the second contact layer 174 and a second contact layer 174 disposed between the first contact layer 174 and the second contact layer 174, A contact electrode 172 disposed in the recess 145 and a second pad 179 connected to the second electrode layer 170A and a support member 181 disposed under the bonding layer 176 .

The second contact layer 174 and the bonding layer 176 may be a second electrode layer. A portion of the outer side of the bonding layer 176 includes a protrusion 176A extended to the outside of the first electrode layer 150 and a second pad 179 is connected to the protrusion 176A. A passivation layer 163 may be disposed between the protrusion 176A of the bonding layer 176 and the first electrode layer 150 and the passivation layer 163 may be formed of the same material as the insulating layer 162 .

The supporting member 181 may be the above-described conductive supporting member, an insulating supporting member, or a heat dissipating member. The heat dissipating member may include a metal or carbon having high thermal conductivity. The insulating member may be disposed of a material having a high thermal conductivity, for example, a silicon material.

The first electrode layer 150 includes a first contact layer 148, a reflective layer 152 and a diffusion layer 154. The first contact layer 148 is disposed under the light emitting structure layer 135, And is in contact with the lower surface of the second conductivity type semiconductor layer 130. The reflective layer 152 is disposed under the first contact layer 148 and reflects light incident through the first contact layer 148. The diffusion layer 154 is disposed under the reflective layer 152 and diffuses the current supplied from the first pad 151 and supplies the diffusion layer 152 with the current. The width of at least one of the first contact layer 148 and the reflective layer 152 may be equal to or wider than the bottom width of the light emitting structure layer 135.

The contact portion 156 of the diffusion layer 154 of the first electrode layer 150 may protrude to contact the lower surface of the second conductivity type semiconductor layer 130. A first pad 151 may be disposed on the contact portion 156.

The first pad 151 and the second pad 179 may be disposed on opposite sides of the light emitting structure layer 135 or may be spaced apart from the light emitting structure layer 135 by a wide width. At least one of the first pad 151 and the second pad 179 may be two or more, but the present invention is not limited thereto.

FIGS. 12 to 20 are views illustrating a manufacturing process of the light emitting device of FIG. 2. FIG.

Referring to FIG. 12, the growth substrate 101 may be loaded in a growth equipment, and formed thereon in the form of a layer or a pattern using a compound semiconductor of Group II to VI elements.

The growth equipment may be an electron beam evaporator, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma laser deposition (PLD), dual-type thermal evaporator sputtering, metal organic chemical vapor deposition, and the like, and the present invention is not limited thereto.

The growth substrate 101 is a growth substrate using a conductive substrate, an insulating substrate, or the like. The growth substrate 101 may be a sapphire substrate (Al ₂ O ₃ ), GaN, SiC, ZnO, Si, GaP, InP, Ga ₂ O ₃ , ≪ / RTI > A lens-like or striped concavo-convex pattern may be formed on the upper surface of the growth substrate 101. A buffer layer 102 may be formed on the growth substrate 101. AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, AlGaN, GaAs, GaAsP, and AlGaInP. An undoped semiconductor layer may be formed on the buffer layer 102. The undoped semiconductor layer may be formed of a GaN-based semiconductor that is not doped, and may be formed of a semiconductor layer that is lower in conductivity than the n-type semiconductor layer.

Referring to FIG. 13, a first semiconductor layer 111 may be disposed on the buffer layer 102, and the first semiconductor layer 111 may be disposed as an n-type semiconductor layer. A mask pattern 103 is formed on the first semiconductor layer 111. The mask pattern 103 is disposed in a region corresponding to the shape of the recess 145 in FIGS. 1, 3, 10, and 11. A second semiconductor layer 113 is formed on the first semiconductor layer 111. The thickness of the mask pattern 103 may be smaller than the thickness of the second semiconductor layer 113 to be spaced apart from the active layer 120. The second semiconductor layer 113 may be formed of an n-type semiconductor layer. The first and second semiconductor layers 111 and 113 may be defined as a first conductive semiconductor layer 110. By disposing the mask pattern 103 on the first semiconductor layer 111, the dislocations propagated to the first semiconductor layer 111 can be blocked, and the crystal quality can be improved. The mask pattern 103 may be selectively formed of SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , and TiO ₂ .

The active layer 120 is formed on the second semiconductor layer 113 and the second conductive semiconductor layer 130 is sequentially stacked on the active layer 120. Other layers may be further disposed on or under the respective semiconductor layers. For example, the semiconductor layer may be formed in a superlattice structure using a Group III-V compound semiconductor layer, but the present invention is not limited thereto.

The first and second semiconductor layers 111 and 113 may be formed of a Group III-V element compound semiconductor doped with a first conductive dopant such as GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, , GaAsP, AlGaInP, and the like. For example, the first and second semiconductor layers 111 and 113 have a composition formula of In _x Al _y Ga _1-xy N (0? X? 1, 0? _Y? 1, 0? _X + y? 1) And may be formed of a semiconductor layer. The first and second semiconductor layers 111 and 113 may be formed as a single layer or a multilayer, but the present invention is not limited thereto. At least one of the first and second semiconductor layers 111 and 113 is a super lattice structure in which two mutually different layers of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, Structure.

The active layer 120 may include a single quantum well structure, a multiple quantum well structure, a quantum wire structure, or a quantum dot structure. The active layer 120 may be formed with a period of a well layer and a barrier layer using a compound semiconductor material of group III-V elements. The well layer is formed in a semiconductor layer having a compositional formula of _{In x Al y Ga 1-xy} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1), and wherein the barrier layer is In _x And a semiconductor layer having a composition formula of Al _y Ga _1-xy N (0? X? 1, 0? _Y? 1, 0? X + y? 1) The barrier layer may be formed of a material having a band gap higher than the band gap of the well layer.

A first clad layer may be formed between the active layer 120 and the first conductivity type semiconductor layer 110. The first clad layer may be formed of a GaN based semiconductor of the first conductivity type or a material of the active layer 120 It can be formed of a material having a high bandgap. The band gap of the barrier layer may be higher than the band gap of the well layer, and the band gap of the first cladding layer may be higher than the band gap of the barrier layer.

The active layer 120 may include at least one period of, for example, the period of the InGaN well layer / GaN barrier layer, the period of the InGaN well layer / AlGaN barrier layer, and the period of the InGaN well layer / InGaN barrier layer .

The second conductivity type semiconductor layer 130 is formed on the active layer 120 and the second conductivity type semiconductor layer 130 is a compound semiconductor of a group III-V element doped with the second conductivity type dopant, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP and the like. The second conductive semiconductor layer 130 may be formed of a semiconductor layer having a composition formula of In _x Al _y Ga _1-xy N (0? X? 1, 0? _Y? 1, 0? _X + y? .

The second conductive semiconductor layer 130 may be a p-type semiconductor layer, and the second conductive dopant may include a p-type dopant such as Mg, Zn, or the like. The second conductive semiconductor layer 130 may be formed as a single layer or a multilayer, but is not limited thereto.

The second conductive semiconductor layer 130 may include a superlattice structure in which two different layers of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP and AlGaInP are alternately arranged .

The first conductive semiconductor layer 110, the active layer 120, and the second conductive semiconductor layer 130 may be defined as a light emitting structure layer 135. A third conductive type semiconductor layer, for example, a semiconductor layer having a polarity opposite to that of the second conductive type may be formed on the second conductive type semiconductor layer 130. Accordingly, the light emitting structure layer 135 may have at least one of an np junction, a pn junction, an npn junction, and a pnp junction structure. In the following description, the structure in which the second conductivity type semiconductor layer 130 is disposed on the uppermost layer of the light emitting structure layer 135 will be described as an example.

Referring to FIG. 14, a first electrode layer 150 is disposed on the light emitting structure layer 135. The first electrode layer 150 includes a first contact layer 148 disposed on the second conductive semiconductor layer 130, a reflective layer 152 disposed on the first contact layer 148, 152). ≪ / RTI > The first electrode layer 150 may be formed by a sputtering method or a vapor deposition method, but the present invention is not limited thereto. The first contact layer 148 is in contact with the upper surface of the light emitting structure layer 135 and the reflective layer 152 is in contact with the first contact layer 148, The diffusion layer 154 is disposed on the reflective layer 152 and diffuses the supplied power to supply the diffused layer 154 to the reflective layer 152.

Referring to FIGS. 15 and 16, a hole 141 is formed on the second electrode layer 150 and the light emitting structure layer 135. A plurality of the holes 141 may be spaced apart from each other, and the shape of the holes 141 may be formed as shown in FIG. 1, FIG. 3, FIG. 10, or FIG. The hole 141 may be formed to a region of the light emitting structure layer 135 where the mask pattern 103 is disposed. Accordingly, the mask pattern 103 may be exposed in the hole 141. An insulating layer 162 is disposed on the second electrode layer 150. The extended portion 161 of the insulating layer 162 is disposed in the hole 141 and the extended portion 161 is formed in the hole 141 by a connection hole 143 in which the extended portion 161 is removed, Lt; / RTI > The mask pattern 103 may be removed by a wet etching process before forming the insulating layer 162, or may be removed after forming the insulating layer 163, but the present invention is not limited thereto.

As another example, the mask pattern 103 may be formed by forming a hole before forming the first electrode layer 150, filling the hole region with an etchable insulating material, forming a first electrode layer 150 on the light emitting structure layer 135, (150) can be formed. Here, the etchable insulating material may be exposed through the first electrode layer 150, and the first electrode layer 150 may be formed. Then, the etchable insulating material may be subjected to a laser drilling process to form a connection hole The mask pattern 103 may be removed, and a contact electrode and a connection electrode may be formed.

The region where the mask pattern 103 is removed may be a recess 145 and the recess 145 may be connected to at least one of the holes 141 or a plurality of adjacent holes 141. The width of the recess 145 may be greater than the width of the hole 141 and the length of the recess 145 may be greater than the length of the hole 141 or longer than the distance between the adjacent holes 141.

16 and 17, an electrode contact layer 173 is disposed in the recess 145, and the electrode contact layer 173 may be formed in a deposition or sputtering manner. The electrode contact layer 173 may be formed of a metal such as ITO (indium tin oxide), IZO (indium zinc oxide), IZON (indium zinc oxide), IZTO (indium zinc tin oxide), IAZO oxide, IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IrOx, RuOx, RuOx / ITO, Ni / IrOx / Au, / Au / ITO, Cr, Ti, Co, Ge, Cu, Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, Or may be formed of a plurality of layers.

The electrode contact layer 173 may be in contact with the upper surface of the first semiconductor layer 111. The electrode contact layer 173 may be in contact with the second semiconductor layer 113, but the present invention is not limited thereto. The electrode contact layer 173 has a width wider than the width of the hole 141 and contacts the first conductive type semiconductor layer 110, thereby improving current and voltage characteristics.

A second electrode layer 170 is disposed on the insulating layer 162. The connection electrode 171 of the second electrode layer 170 is disposed in the hole 141 and the contact electrode 172 is disposed in the recess 145. The contact electrode 172 is connected to the connection electrode 171 and may be connected to at least one or more connection electrodes 171, for example. The contact electrode 172 may be connected to the electrode contact layer 173.

The second electrode layer 170 includes at least one of a second contact layer 174, a bonding layer 176, and a conductive support member 178.

The second contact layer 174 and the bonding layer 176 may be formed of at least one of a sputtering method, a plating method, a deposition method, and a printing method. The second contact layer 174 may include at least one of a metal, a metal nitride, and a metal oxide. The second contact layer 174 may include at least one of ITO (indium tin oxide), IZO (indium zinc oxide), IZON (indium zinc nitride), IZTO , Indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO) , RuOx / ITO, Ni / IrOx / Au, and Ni / IrOx / Au / ITO, Cr, Ti, Co, Ge, Cu, Ag, Ni, Al, Rh, Pd, Ir, Ru, Au, Hf, and alloys of two or more of them.

The connection electrode 171 and the contact electrode 172 may be formed of the same material as the second contact layer 174, but the present invention is not limited thereto.

The bonding layer 176 is disposed on the second contact layer 174 and may be a barrier metal or a bonding metal. The bonding layer 176 may be a metal such as Ti, Au, Sn, Ni, Cr, Ga, In, Or < RTI ID = 0.0 > Ta. ≪ / RTI > The bonding layer 176 may be formed of at least one of a deposition method, a sputtering method, and a plating method, or may be attached with a conductive sheet.

The conductive support member 178 is disposed on the bonding layer 176 and is formed of a metal such as copper (Cu), gold (Au), nickel (Ni), molybdenum (Mo), copper- -W), or the like. The conductive support member 178 may be formed of a carrier wafer (e.g., Si, Ge, GaAs, ZnO, SiC, SiGe, Ga ₂ O ₃ , GaN or the like) Lt; RTI ID = 0.0 > solder. ≪ / RTI >

Referring to FIG. 19, the growth substrate 101 may be removed by physical and / or chemical methods. The removal method of the growth substrate 101 is removed by a laser lift off (LLO) process. That is, the growth substrate 101 is lifted off by irradiating the growth substrate 101 with a laser having a wavelength in a certain region. Alternatively, the buffer layer 102 disposed between the growth substrate 101 and the first conductive type semiconductor layer 110 may be removed using a wet etching solution to separate the growth substrate 101. The upper surface of the first semiconductor layer 111 may be exposed by removing the growth substrate 101 and removing or polishing the buffer layer 102 by etching or polishing.

The upper surface of the first conductor layer 111 may be etched by an ICP / RIE (Inductively Coupled Plasma / Reactive Ion Etching) method or polished by a polishing machine.

20, the channel region or the isolation region can be removed by etching the periphery of the light emitting structure layer 135, that is, the outer region 137 between the chip and the chip, and the contact portion 155 of the diffusion layer 154 ). The etch process includes wet etch and / or dry etch. The upper surface of the first semiconductor layer 111 may be formed of a light extracting structure which is an uneven surface, and the light extracting structure may be formed of a roughness or a pattern. The light extracting structure) may be formed by a wet or dry etching method.

A first pad 151 may be formed on the contact portion 155 of the diffusion layer 154 of the first electrode layer 150.

Further, a protective layer may be further formed on the surface of the light emitting structure layer 135, but the present invention is not limited thereto.

The light emitting device may be packaged and then mounted on a board or mounted on a board. Hereinafter, a light emitting device package or a light emitting module having the light emitting device of the above-described embodiment (s) will be described.

21 is a sectional view of a light emitting device package having a light emitting device according to the embodiment.

21, the light emitting device package 500 includes a body 515, a first lead frame 521 and a second lead frame 523 disposed on the body 515, And includes a molding member 531 surrounding the light emitting device 100. The light emitting device 100 includes a first lead frame 521 and a second lead frame 523 and is electrically connected to the first lead frame 521 and the second lead frame 523. [ do.

The body 515 may be formed of a conductive substrate such as silicon, a synthetic resin material such as PPA, a ceramic substrate, an insulating substrate, or a metal substrate (e.g., MCPCB). The body 515 may be formed with an inclined surface around the light emitting device 100 by the cavity structure. The outer surface of the body 515 may also be formed with a vertical or inclined shape. The body 31 may include a reflective portion 513 having a concave cavity 517 opened at the top and a supporting portion 511 supporting the reflective portion 513. However, the present invention is not limited thereto.

In the cavity 517 of the body 515, lead frames 521 and 523 and the light emitting device 100 are disposed. The light emitting device 100 is mounted on the second lead frame 523, To the first lead frame 521, as shown in FIG. The first lead frame 521 and the second lead frame 523 are electrically isolated from each other and provide power to the light emitting device 100. [ The connecting member 503 may be formed of a wire. In addition, the first lead frame 521 and the second lead frame 523 may reflect light generated from the light emitting device 100 to increase light efficiency. All. For this purpose, a separate reflective layer may be formed on the first lead frame 521 and the second lead frame 523, but the present invention is not limited thereto. In addition, the first and second lead frames 521 and 523 may serve to discharge the heat generated from the light emitting device 100 to the outside. The lid portion 522 of the first lead frame 521 and the lid portion 524 of the second lead frame 523 may be disposed on the lower surface of the body 515. [

The first and second lead frames 521 and 523 may be formed of a metal material such as titanium, copper, nickel, gold, chromium, tantalum, And may include at least one of platinum (Pt), tin (Sn), silver (Ag), and phosphorus (P). In addition, the first and second lead frames 521 and 523 may be formed to have a multi-layer structure, but the present invention is not limited thereto.

The molding member 531 may include a resin material such as silicon or epoxy, and may surround the light emitting device 100 to protect the light emitting device 100. In addition, the molding member 531 may include a phosphor to change the wavelength of light emitted from the light emitting device 100. The phosphor may be selectively formed from YAG, TAG, Silicate, Nitride, and Oxy-nitride based materials. The phosphor includes at least one of a red phosphor, a yellow phosphor, and a green phosphor. The upper surface of the molding member 531 may be flat, concave or convex.

A lens may be disposed on the molding member 531, and the lens may be formed in contact with or in contact with the molding member 531. The lens may comprise a concave or convex shape.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment of the present invention and are not necessarily limited to one embodiment. Furthermore, the features, structures, effects and the like illustrated in the embodiments can be combined and modified by other persons skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

100: Light emitting element
110: first conductivity type semiconductor layer
111: first semiconductor layer
113: second semiconductor layer
120: active layer
130: second conductive type semiconductor layer
135: light emitting structure layer
141: hole
143: Connection hole
145: recess
150: first electrode layer
151: first pad
162: insulating layer
170, 170A: the second electrode layer
171: connecting electrode
172: contact electrode
173: electrode contact layer

Claims (16)

A first conductivity type semiconductor layer, a second conductivity type semiconductor layer disposed under the first conductivity type semiconductor layer, And a light emitting structure layer including an active layer between the first and second conductivity type semiconductor layers;
A plurality of holes disposed in the active layer of the second conductivity type semiconductor layer and the first conductivity type semiconductor layer and having a first width;
A recess in the first conductive semiconductor layer having a width wider than the first width and connected to at least one of the plurality of first holes;
A connection electrode disposed in each of the plurality of holes; And
And a contact electrode disposed in the recess and connected to the connection electrode. The method according to claim 1,
A first electrode layer disposed below the light emitting structure layer;
A second electrode layer disposed below the first electrode layer; And
And an insulating layer disposed between the first and second electrode layers. 3. The method of claim 2,
Wherein the plurality of holes extend into the first electrode layer,
Wherein the insulating layer includes an extension extending between a surface of the hole and the connection electrode. 3. The method of claim 2,
And the second electrode layer is connected to the connection electrode. 3. The method of claim 2,
Wherein the recess is connected to adjacent holes of the plurality of holes,
And the contact electrode is connected to different connection electrodes disposed in the adjacent holes. 6. The method according to any one of claims 2 to 5,
The second electrode layer includes a second contact layer having the connection electrode; A conductive support member disposed below the second contact layer; And a bonding layer between the second contact layer and the conductive supporting member. The method according to claim 6,
The first electrode layer includes a first contact layer below the second conductive semiconductor layer; A reflective layer below the first contact layer; And a diffusion layer disposed between the reflective layer and the insulating layer,
And the hole penetrates the inside of the first contact layer, the reflection layer, and the diffusion layer. 8. The method of claim 7,
Wherein the diffusion layer includes a contact portion disposed outside the side surface of the light emitting structure layer,
And a first pad disposed on the contact portion. 6. The method according to any one of claims 1 to 5,
And an electrode contact layer disposed in the recess and disposed between the contact electrode and the first conductive type semiconductor layer. 6. The method according to any one of claims 1 to 5,
Wherein the recess disposed on the hole has a gradually wider width closer to an upper surface of the first conductive type semiconductor layer. 6. The method according to any one of claims 1 to 5,
Wherein the first conductive semiconductor layer includes a first semiconductor layer and a second semiconductor layer disposed between the first semiconductor layer and the active layer,
And the recess is disposed in the second semiconductor layer. 12. The method of claim 11,
And the recess is disposed under the first semiconductor layer. 13. The method of claim 12,
Wherein the recess is larger in width than a width of a region disposed on an upper surface of the second semiconductor layer is larger than a width of a region adjacent to an upper surface of the first semiconductor layer. 10. The method of claim 9,
Wherein the recess includes an uneven surface,
And the electrode contact layer is disposed on the uneven surface. The method of claim 3,
And a surface between the extended portion of the insulating layer and the connection electrode includes a roughness. 6. The method according to any one of claims 1 to 5,
Wherein a width of the hole disposed in the first conductive type semiconductor layer is narrower than a width of the hole disposed on a lower surface of the light emitting structure layer.

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