KR20160051731A - 콜로이드 반도체 금속 칼코겐화물 나노구조 - Google Patents

콜로이드 반도체 금속 칼코겐화물 나노구조 Download PDF

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Publication number
KR20160051731A
KR20160051731A KR1020167002872A KR20167002872A KR20160051731A KR 20160051731 A KR20160051731 A KR 20160051731A KR 1020167002872 A KR1020167002872 A KR 1020167002872A KR 20167002872 A KR20167002872 A KR 20167002872A KR 20160051731 A KR20160051731 A KR 20160051731A
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KR
South Korea
Prior art keywords
chalcogenide
zinc
nanorods
znse
nanowires
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KR1020167002872A
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English (en)
Korean (ko)
Inventor
우리 바닌
구오화 지아
Original Assignee
이슘 리서치 디벨롭먼트 컴퍼니 오브 더 히브루 유니버시티 오브 예루살렘, 엘티디.
큐라이트 나노테크 리미티드
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Publication of KR20160051731A publication Critical patent/KR20160051731A/ko
Ceased legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B82B3/0042—Assembling discrete nanostructures into nanostructural devices
    • B82B3/0057—Processes for assembling discrete nanostructures not provided for in groups B82B3/0047 - B82B3/0052
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/007—Tellurides or selenides of metals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G9/00—Compounds of zinc
    • C01G9/08—Sulfides
    • H01L29/0669—
    • H01L29/22—
    • H01L33/18—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/86—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/10—Particle morphology extending in one dimension, e.g. needle-like
    • C01P2004/16—Nanowires or nanorods, i.e. solid nanofibres with two nearly equal dimensions between 1-100 nanometer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/762—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Composite Materials (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Luminescent Compositions (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
KR1020167002872A 2013-07-01 2014-07-01 콜로이드 반도체 금속 칼코겐화물 나노구조 Ceased KR20160051731A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361841628P 2013-07-01 2013-07-01
US61/841,628 2013-07-01
US201361921663P 2013-12-30 2013-12-30
US61/921,663 2013-12-30
PCT/IL2014/050591 WO2015001557A1 (en) 2013-07-01 2014-07-01 Colloidal semiconductor metal chalcogenide nanostructures

Publications (1)

Publication Number Publication Date
KR20160051731A true KR20160051731A (ko) 2016-05-11

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Family Applications (1)

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KR1020167002872A Ceased KR20160051731A (ko) 2013-07-01 2014-07-01 콜로이드 반도체 금속 칼코겐화물 나노구조

Country Status (7)

Country Link
US (1) US10160648B2 (https=)
EP (1) EP3016906A1 (https=)
JP (1) JP2016532622A (https=)
KR (1) KR20160051731A (https=)
CN (1) CN105555706B (https=)
TW (1) TWI689097B (https=)
WO (1) WO2015001557A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200060742A (ko) * 2017-09-27 2020-06-01 더 리젠츠 오브 더 유니버시티 오브 미시건 고슴도치-형태의 입자를 형성하기 위한 자기-조립 방법들

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104638066B (zh) * 2015-02-09 2017-02-22 浙江大学 ZnO/ZnS/FeS2核壳结构阵列薄膜及制备方法
KR20180014006A (ko) 2015-05-28 2018-02-07 큐라이트 나노테크 리미티드 시딩된 나노입자들, 이들의 제조 및 용도
WO2017046268A1 (en) * 2015-09-16 2017-03-23 The University Of Manchester 2d materials
KR102148689B1 (ko) * 2015-12-31 2020-08-28 다우 글로벌 테크놀로지스 엘엘씨 나노구조 물질의 연속 유동 합성
JP6602211B2 (ja) * 2016-01-22 2019-11-06 株式会社堀場製作所 粒子分析装置、粒子分析方法及び粒子分析プログラム
CN110753734A (zh) * 2017-04-19 2020-02-04 耶路撒冷希伯来大学伊森姆研究发展有限公司 半导体纳米结构及应用
TWI756032B (zh) * 2017-10-12 2022-02-21 日商Ｎｓ材料股份有限公司 量子點及其製造方法、使用量子點之波長轉換構件、照明構件、背光裝置、及顯示裝置
EP3844240B1 (en) * 2018-05-30 2024-02-14 Shoei Chemical Inc. Method for synthesis of blue-emitting znse1-xtex alloy nanocrystals
CN114558592B (zh) * 2022-03-09 2023-11-14 北方民族大学 一种ZnO/ZnS纳米棒核壳结构光催化剂及其制备方法

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JP2004510678A (ja) * 2000-10-04 2004-04-08 ザ　ボード　オブ　トラスティーズ　オブ　ザ　ユニバーシティ　オブ　アーカンソー コロイドナノ結晶の合成
CN1199850C (zh) * 2003-05-23 2005-05-04 中国地质大学（武汉） 高纯纳米硫的制备方法
US8568871B2 (en) * 2007-10-29 2013-10-29 State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of Portland State University Mono-layer and multi-layer nanowire networks
JP5382691B2 (ja) * 2008-12-18 2014-01-08 独立行政法人物質・材料研究機構 偏光調整型電気光学装置のための液晶ディスプレイ用ナノロッド配合物
KR101978691B1 (ko) * 2010-09-16 2019-05-15 이섬 리서치 디벨러프먼트 컴파니 오브 더 히브루 유니버시 티 오브 예루살렘 엘티디. 이방성 반도체 나노입자
US9202867B2 (en) * 2011-10-04 2015-12-01 Arizona Board Of Regents Nanocrystals containing CdTe core with CdS and ZnS coatings
JP5836497B2 (ja) * 2011-12-07 2015-12-24 イースト チャイナ ユニバーシティ オブ サイエンス アンド テクノロジー セレン化カドミウム多脚型ナノ結晶の製造方法
CN103288122B (zh) * 2013-05-28 2014-11-05 浙江大学 一种菱形氧化锌纳米棒阵列及其制备方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200060742A (ko) * 2017-09-27 2020-06-01 더 리젠츠 오브 더 유니버시티 오브 미시건 고슴도치-형태의 입자를 형성하기 위한 자기-조립 방법들

Also Published As

Publication number Publication date
EP3016906A1 (en) 2016-05-11
CN105555706B (zh) 2020-10-16
US20160115027A1 (en) 2016-04-28
WO2015001557A1 (en) 2015-01-08
CN105555706A (zh) 2016-05-04
TW201523874A (zh) 2015-06-16
TWI689097B (zh) 2020-03-21
JP2016532622A (ja) 2016-10-20
US10160648B2 (en) 2018-12-25

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