KR20160032920A - A light emitting device - Google Patents

Abstract

An embodiment relates to a light emitting device for improving light extraction efficiency. The light emitting device includes a substrate, a light emitting structure which includes a first conductivity type semiconductor layer arranged on the substrate, an active layer, and a second conductivity type semiconductor layer, a p-n junction layer arranged under the substrate, a bonding layer arranged between the substrate and the p-n junction layer, and a first electrode which penetrates the substrate and electrically connects the first conductivity type semiconductor layer and the bonding layer.

Description

A LIGHT EMITTING DEVICE

An embodiment relates to a light emitting element.

Generally, a light emitting device package mounts a zener diode for protecting the static electricity on the same surface as a surface of a package body for mounting a light emitting device (e.g., an LED).

The zener diode can be mounted at any position of the package body, but the zener diode is mounted in consideration of the efficiency of the light emitting device package as much as possible.

A design and a technique for preventing a decrease in light efficiency due to absorption of light by a Zener diode and a minimum length of a wire for connecting the light emitting element and the Zener diode have been developed.

As an example of such a method, there is a method of embedding a zener diode in a cavity of a light emitting device package. In this case, however, the use of a wire is inevitable for connection between the light emitting element and the zener diode.

Further, in order to embed the Zener diode in the cavity, the angle of the side surface of the cavity may be restricted, which may be a restriction to improve the light efficiency of the light emitting device package.

Embodiments provide a light emitting device capable of improving heat dissipation efficiency and light extraction efficiency.

A light emitting device according to an embodiment includes a substrate; A light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer disposed on the substrate; A p-n junction layer disposed under the substrate; A bonding layer disposed between the substrate and the p-n junction layer; And a first electrode electrically connecting the first conductive type semiconductor layer and the bonding layer through the substrate.

The p-n junction layer may include a first conductive type nitride semiconductor layer; And a second conductive type nitride semiconductor layer disposed between the first conductive type nitride semiconductor layer and the bonding layer, wherein the first conductive type nitride semiconductor layer and the second conductive type nitride semiconductor layer have a pn junction structure Lt; / RTI >

One end of the first electrode is in contact with the lower surface of the first conductive type semiconductor layer and the other end of the first electrode is in contact with the upper surface of the bonding layer.

One end of the first electrode may protrude from the upper surface of the substrate.

Wherein a plurality of first electrodes are disposed, a plurality of first electrodes are disposed apart from each other, one end of each of the plurality of first electrodes is in contact with a lower surface of the first conductive type semiconductor layer, And the other end of each of the electrodes may be in contact with the upper surface of the bonding layer.

The light emitting device may further include a contact layer disposed below the p-n junction layer and in contact with the p-n junction layer.

The light emitting device may further include a passivation layer disposed on a side surface of the light emitting structure and a side surface of the p-n junction layer.

The light emitting device includes a conductive layer disposed on the second conductive semiconductor layer; And a second electrode disposed on the conductive layer.

The first electrode may be made of a reflective material that reflects light.

Wherein the first electrode has an upper surface in contact with the first conductive semiconductor layer; A lower surface contacting the bonding layer; And a side surface located between the upper surface and the lower surface, and the side surface of the first electrode may be an inclined surface with respect to an upper surface of the substrate.

The area of the interface between the upper surface of the first electrode and the lower surface of the first conductive type semiconductor layer may be one half or more of the total area of the lower surface of the first conductive type semiconductor layer.

The embodiment can improve heat dissipation efficiency and light extraction efficiency.

1 is a cross-sectional view of a light emitting device according to an embodiment.
2 is a cross-sectional view of a light emitting device according to another embodiment.
3 shows a cross-sectional view of a light emitting device according to another embodiment.
4 illustrates a light emitting device package including a light emitting device according to an embodiment.
5 shows a lighting device including a light emitting device package according to an embodiment.
6 shows a display device including a light emitting device package according to an embodiment.
7 shows a head lamp including a light emitting device package according to an embodiment.

BRIEF DESCRIPTION OF THE DRAWINGS The above and other features and advantages of the present invention will become more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which: FIG. In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure may be referred to as being "on" or "under" a substrate, each layer It is to be understood that the terms " on "and " under" include both " directly "or" indirectly " do. In addition, the criteria for the top / bottom or bottom / bottom of each layer are described with reference to the drawings.

In the drawings, dimensions are exaggerated, omitted, or schematically illustrated for convenience and clarity of illustration. Also, the size of each component does not entirely reflect the actual size. The same reference numerals denote the same elements throughout the description of the drawings.

1 is a cross-sectional view of a light emitting device 100 according to an embodiment.

1, a light emitting device 100 includes a substrate 110, a light emitting structure 120, a conductive layer 130, a first electrode 140, a second electrode 150, a bonding layer 160, a pn A junction layer 170, a passivation layer 180, and a contact layer 190.

The substrate 110 may be an insulating substrate. Further, the substrate 110 may be a light transmitting substrate. For example, the substrate 110 may be a sapphire substrate, a silicon (Si) substrate, a zinc oxide (ZnO) substrate, or a semiconductor substrate.

The thickness of the substrate 110 may be 50 [mu] m to 150 [mu] m.

If the thickness of the substrate 110 is less than 50 탆, the light emitting structure 120 can not be supported. If the thickness of the substrate 110 is more than 150 탆, the light emitting efficiency of the light emitting device 100 may be lowered.

The light emitting structure 120 is disposed on the substrate 110 and can emit light.

A buffer layer (not shown) is interposed between the first conductivity type semiconductor layer 122 and the substrate 110 to mitigate lattice mismatch due to a difference in lattice constant between the substrate 110 and the light emitting structure 120, May be disposed.

The buffer layer may be a nitride semiconductor including Group 3 elements and Group 5 elements. For example, the buffer layer may include at least one of InAlGaN, GaN, AlN, AlGaN, and InGaN. The buffer layer may be a single layer or a multi-layer structure, and a Group 2 element or a Group 4 element may be doped with an impurity.

In order to improve the crystallinity of the first conductivity type semiconductor layer 122, an undoped semiconductor layer (not shown) may be interposed. The un-doped semiconductor layer may be the same as the first conductive type semiconductor layer 122 except that the n-type dopant is not doped and has a lower electrical conductivity than the first conductive type semiconductor layer 122.

The light emitting structure 120 may have a structure in which a first conductive semiconductor layer 122, an active layer 124, and a second conductive semiconductor layer 126 are sequentially stacked.

The first conductive semiconductor layer 122 may be a compound semiconductor such as a group III-V, a group II-VI, or the like, and may be doped with a first conductive dopant.

The first conductivity type semiconductor layer 122 may be a semiconductor having a composition formula of In _x Al _y Ga _{1 -xy} N (0? X? 1, 0 <y? 1, 0? X + y? For example, the first conductive semiconductor layer 122 may include any one of InAlGaN, GaN, AlGaN, InGaN, AlN, InN, and AlInN, and an n-type dopant such as Si, Ge, Can be doped.

The active layer 124 may be disposed between the first conductive semiconductor layer 122 and the second conductive semiconductor layer 126 and may include a first conductive semiconductor layer 122 and a second conductive semiconductor layer 126, The light can be generated by the energy generated in the recombination process of the electrons and the holes provided from the light source.

The active layer 124 may be a compound semiconductor of a semiconductor compound such as a Group 3-V-5 or a Group 2-VI-6 compound semiconductor and may be a single well structure, a multi-well structure, a Quantum-Wire structure, Dot) structure.

The active layer 124 may have a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + y? For example, the active layer 134 may include a well layer (not shown) and a barrier layer (not shown) that are alternately disposed one or more times, and the energy band gap of the well layer may be less than the energy band gap of the barrier layer have.

The second conductive semiconductor layer 126 may be disposed on the active layer 124 and may be a compound semiconductor such as a group III-V, a group II-VI, or the like, and the second conductive type dopant may be doped .

The second conductivity type semiconductor layer 126 may be a semiconductor having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + y? 1) . For example, the second conductive semiconductor layer 126 may include any one of InAlGaN, GaN, AlGaN, InGaN, AlN, InN, and AlInN, and a p-type dopant such as Mg, Zn, Ca, Can be doped.

The conductive layer 130 is disposed on the second conductive type semiconductor layer 126 and not only reduces the total internal reflection but also has excellent light transmittance so that light emitted from the active layer 124 to the second conductive type semiconductor layer 126 The extraction efficiency can be increased.

The conductive layer 130 may be formed of a transparent conductive oxide such as indium tin oxide (ITO), tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), indium aluminum zinc oxide Indium Gallium Zinc Oxide), IGTO (Indium Gallium Tin Oxide), AZO (Aluminum Zinc Oxide), ATO (Antimony Tin Oxide), GZO (Gallium Zinc Oxide), IrOx, RuOx, RuOx / ITO, Ni, / Au, or Ni / IrOx / Au / ITO. Although not shown, the conductive layer 130 may have a concavo-convex structure on its upper surface to improve light extraction efficiency.

The first electrode 140 may be in contact with the first conductive semiconductor layer 122 through the substrate 110. That is, the first electrode 140 may electrically connect the first conductive semiconductor layer 122 and the bonding layer 160 through the substrate 110.

The p-n junction layer 170 is disposed below the substrate 110.

The pn junction layer 170 includes a first conductive type nitride semiconductor layer 172 and a second conductive type nitride semiconductor layer 174 and includes a first conductive type nitride semiconductor layer 172 and a second conductive type nitride semiconductor layer 172. [ Layer 174 has a pn junction structure.

The second conductive type nitride semiconductor layer 174 may be disposed between the bonding layer 160 and the first conductive type nitride semiconductor layer 172.

The first conductive type nitride semiconductor layer 172 may be a semiconductor having a composition formula of In _x Al _y Ga _{1 -xy} N (0? X? 1, 0 <y? 1, 0? X + y? For example, the first conductive type nitride semiconductor layer 172 may be formed of any one of InAlGaN, GaN, AlGaN, InGaN, AlN, InN, and AlInN, and an n-type dopant such as Si, Ge, ) May be doped.

The second conductive type nitride semiconductor layer 174 may be a semiconductor having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + have. For example, the second conductive type nitride semiconductor layer 174 may include any one of InAlGaN, GaN, AlGaN, InGaN, AlN, InN, and AlInN and may include a p-type dopant such as Mg, Zn, Ca, Sr, Ba ) May be doped.

The interface between the first conductive type nitride semiconductor layer 172 and the second conductive type nitride semiconductor layer 174 may form a pn junction surface 173 and the pn junction surface 173 may be formed on the lower surface of the active layer 122 As shown in FIG. For example, the p-n junction plane 173 may be parallel to the lower surface of the active layer 122.

The pn junction layer 170 may serve as a zener diode for preventing the light emitting device 100 from being damaged when a large reverse bias voltage or a surge voltage is applied to the light emitting device 100 have.

The bonding layer 160 is disposed between the substrate 110 and the p-n bonding layer 170 and serves to bond the substrate 110 and the p-n bonding layer 170 to each other.

The bonding layer 160 may be made of a conductive material so as to electrically connect the first electrode 140 and the p-n bonding layer 170. For example, the bonding layer 160 may include at least one of a metal material, for example, Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu,

For example, the bonding layer 160 may include a first bonding layer (not shown) formed on the lower surface of the substrate 110 and a second bonding layer (not shown) formed on the second nitride semiconductor layer 174 of the pn bonding layer 170. [ The substrate 110 and the pn junction layer 170 may be bonded to each other by bonding the first bonding layer and the second bonding layer by a heat fusion bonding method.

The first electrode 140 may pass through the substrate 110. One end of the first electrode 140 may contact the first conductive semiconductor layer 122. The other end of the first electrode 140 may be bonded Layer 160 as shown in FIG.

For example, one end of the first electrode 140 may protrude from the upper surface of the substrate 110, and may contact the lower surface of the first conductive type semiconductor layer 122. The other end of the first electrode 140 may be in contact with the upper surface of the bonding layer 160.

In FIG. 1, the shape of the first electrode 140 is a rod shape. However, the shape of the first electrode 140 is not limited thereto, and may be various shapes such as a polyhedral shape, a hemisphere shape, a dome shape, or the like.

The second electrode 150 may be disposed on the conductive layer 130 and may be in ohmic contact with the conductive layer 130 to reduce the contact resistance. The first electrode 140 and the second electrode 150 may provide power to the light emitting structure 120.

The first electrode 140 and the second electrode 150 may be formed of a conductive material such as Ti, Al, Al alloy, In, Ta, Pd, Co, Ni, Si, Ge, Ag, , Ru, or Au, or may be formed of an alloy containing at least one of them, and the form thereof may be a single layer or a multilayer.

The passivation layer 180 may be disposed on the side of the light emitting structure 120 and on the side of the p-n junction layer 170 to electrically protect the light emitting structure 120 and the p-n junction layer 170. The passivation layer 160 may also be disposed on the side of the bonding layer 160. 1, the passivation layer 180 is not disposed on the upper surface of the conductive layer 130, but in other embodiments, the passivation layer may also be disposed on the conductive layer.

The passivation layer 180 may comprise an insulating material, such as SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , or Al ₂ O ₃ .

The contact layer 190 is disposed below the p-n junction layer 170 and may contact the p-n junction layer 170. For example, the contact layer 190 may be disposed below the first conductive nitride semiconductor layer 172 of the pn junction layer 170 and may be in ohmic contact with the first conductive nitride semiconductor layer 172 to reduce contact resistance, can do.

In general, since the horizontal flat type light emitting device etches part of the light emitting structure for the electrode arrangement, the light emitting area decreases. However, since the first electrode 140 is disposed below the substrate 110 in the embodiment, Do not decrease.

Also, by setting the thickness of the substrate 110 to be 150 mu m or less, the embodiment can improve the heat radiation efficiency and reduce the light absorbed by the substrate 110, thereby improving the light extraction efficiency.

In addition, since the light emitting structure 120 and the p-n junction layer 170 are formed of a single chip, a separate zener diode for protecting the light emitting device is not required, thereby reducing the manufacturing cost.

2 shows a cross-sectional view of a light emitting device 100-1 according to another embodiment.

The same reference numerals as those in FIG. 1 denote the same components, and the description of the same components will be simplified or omitted.

2, the light emitting device 100-1 includes a substrate 110, a light emitting structure 120, a conductive layer 130, first electrodes 140-1, 140-2 and 140-3, a second electrode 150, A bonding layer 160, a pn junction layer 170, a passivation layer 180, and a contact layer 190.

In FIG. 2, the number of the first electrodes 140-1, 140-2, and 140-3 may be plural, and the plurality of the first electrodes 140-1, 140-2, and 140-3 may be spaced apart from each other.

Each of the plurality of first electrodes 140-1, 140-2, and 140-3 may pass through the first substrate 110. One end of each of the plurality of first electrodes 140-1, 140-2, and 140-3 may be in contact with the first conductive type semiconductor layer 122. At this time, regions where the first electrodes 140-1, 140-2, and 140-3 contact with the first conductive type semiconductor layer 122 may be different regions and may be spaced apart from each other. One end of each of the plurality of first electrodes 140-1, 140-2, and 140-3 may protrude from the upper surface of the first substrate 110.

The other end of each of the plurality of first electrodes 140-1, 140-2, and 140-3 may be in contact with the bonding layer 160. At this time, the regions where the first electrodes 140-1, 140-2, and 140-3 contact with the bonding layer 160 may be different regions and may be spaced apart from each other.

The light emitting device 100-1 includes a plurality of first electrodes 140-1, 140-2, and 140-3 that are spaced apart from each other, thereby improving current dispersion in the light emitting structure 120, .

Some of the plurality of first electrodes 140-1, 140-2 and 140-3 may be arranged to overlap with the second electrode 150 in the vertical direction, and a plurality of first electrodes 140-1, -3 may be aligned so as not to overlap with the second electrode 150 in the vertical direction. The vertical direction may be a direction perpendicular to the upper surface of the substrate 110 in the direction from the p-n junction layer 170 to the light emitting structure 120. Or the vertical direction may be a direction in which the first conductivity type semiconductor layer 122, the active layer 124, and the second conductivity type semiconductor layer 126 of the light emitting structure 120 are stacked.

3 shows a cross-sectional view of a light emitting device 200 according to another embodiment.

The same reference numerals as those in FIG. 1 denote the same components, and the description of the same components will be simplified or omitted.

3, the light emitting device 200 includes a substrate 110, a light emitting structure 120, a conductive layer 130, a first electrode 210, a second electrode 150, a bonding layer 160, a pn A bonding layer 170, a passivation layer 180, and a contact layer 190.

Referring to FIG. 3, the first electrode 210 may be formed of a reflective material that reflects light emitted from the light emitting structure 120.

For example, the first electrode 210 may be formed of a metal or an alloy including at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au and Hf.

Alternatively, for example, the first electrode 210 may be formed in multiple layers using the metal or alloy, and a transparent conductive oxide. Here, the transparent conductive oxide may be the same as the material of the conductive layer 130. For example, the first electrode 210 may be formed of IZO / Ni, AZO / Ag, IZO / Ag / Ni, or AZO / Ag / Ni.

The first electrode 210 may include an upper surface 211, a lower surface 212 facing the upper surface 211 and a side surface 213 positioned between the upper surface 211 and the lower surface 212.

The first electrode 210 passes through the substrate 110 and the upper surface 211 of the first electrode 210 is in contact with the lower surface of the first conductive type semiconductor layer 122.

The lower surface 212 of the first electrode 210 may be in contact with the upper surface of the bonding layer 160.

The side surface 213 of the first electrode 210 may be in contact with the penetrating portion 11a of the substrate 110. [

A part of the side surface 213 of the first electrode 210 such as the upper surface of the side surface 213 may be a structure protruding from the upper surface of the substrate 110 of the first electrode 210, (122).

The area of the interface between the top surface 211 of the first electrode 210 and the bottom surface of the first conductivity type semiconductor layer 122 may be one half or more of the total area of the bottom surface of the first conductivity type semiconductor layer 122 have.

The side surface 213 of the first electrode 210 may be an inclined surface with respect to the upper surface (or lower surface) of the substrate 110. At this time, the angle? Between the upper surface (or lower surface) of the substrate 110 and the side surface 213 of the first electrode 210 may be an obtuse angle.

The upper surface 211 and the lower surface 212 of the first electrode 210 may be parallel to the upper surface of the substrate 110, but the embodiment is not limited thereto.

The area of the upper surface 211 of the first electrode 210 may be smaller than the area of the lower surface of the first electrode 210. The vertical cross section of the first electrode 210 may be in a trapezoidal shape, but is not limited thereto.

The first electrode 210 reflects light emitted from the active layer 124 toward the substrate 110, thereby improving light extraction efficiency.

Since the light 301, 302, and 303 reflected by the first electrode 210 that is a sloped surface can proceed not only in the top surface direction of the light emitting device 200 but also in the lateral direction of the light emitting device 200, Can be improved.

Also, the current injection efficiency can be improved by increasing the area in which the first electrode 210 and the first conductive type semiconductor layer 122 are in contact with each other.

4 illustrates a light emitting device package including a light emitting device according to an embodiment.

Referring to FIG. 4, the light emitting device package includes a package body 510, a first conductive layer 512, a second conductive layer 514, a light emitting device 520, a reflection plate 525, a wire 530, And a resin layer 540.

The package body 510 may be formed of a substrate having good insulating or thermal conductivity, such as a silicon based wafer level package, a silicon substrate, silicon carbide (SiC), aluminum nitride (AlN) Or may be a structure in which a plurality of substrates are stacked. Or the package body 510 may be formed of a resin material, for example, polyphthalamide (PPA), or an EMC resin. The embodiments are not limited to the material, structure, and shape of the body described above.

The package body 510 may have a cavity made of side and bottom. At this time, the side surface of the cavity may be formed to be inclined.

The first conductive layer 512 and the second conductive layer 514 may be disposed on the surface of the package body 510 such that the first conductive layer 512 and the second conductive layer 514 are electrically separated from each other in consideration of heat dissipation or mounting of the light emitting device 520. For example, the first conductive layer 512 and the second conductive layer 514 may be disposed in the cavity.

The light emitting device 520 is electrically connected to the first conductive layer 512 and the second conductive layer 514 and the heat generated from the light emitting device 520 is transferred to the first conductive layer 512 and the second conductive layer 514 514 &lt; / RTI &gt; Here, the light emitting device 520 may be the light emitting device 100, 100-1, or 200 according to the embodiment.

The contact layer 190 of the light emitting device 100, 100-1, 200 may be electrically connected to the second conductive layer 514. The second electrode 150 of the light emitting devices 100, 100-1 and 200 may be electrically connected to the first conductive layer 512 by a wire 530.

The reflection plate 525 is formed on the cavity side of the package body 510 to direct the light emitted from the light emitting element 520 in a predetermined direction. The reflection plate 525 is made of a light reflection material, and may be, for example, a metal coating or a metal flake.

The resin layer 540 surrounds the light emitting element 520 located in the cavity of the package body 510 to protect the light emitting element 520 from the external environment. The resin layer 540 is made of a colorless transparent polymer resin material such as epoxy or silicone. The resin layer 540 may include a phosphor to change the wavelength of light emitted from the light emitting device 520.

A plurality of light emitting device packages according to embodiments may be arranged on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, and the like may be disposed on the light path of the light emitting device package. The light emitting device package, the substrate, and the optical member may function as a backlight unit.

Still another embodiment may be implemented as a display device, an indicating device, and a lighting system including the light emitting device or the light emitting device package described in the above embodiments. For example, the lighting system may include a lamp and a streetlight.

5 shows a lighting device including a light emitting device package according to an embodiment.

5, the lighting device may include a cover 1100, a light source module 1200, a heat discharger 1400, a power supply unit 1600, an inner case 1700, and a socket 1800. In addition, the illumination device according to the embodiment may further include at least one of the member 1300 and the holder 1500.

The cover 1100 may be in the form of a bulb or a hemisphere, and may be hollow in shape and partially open. The cover 1100 may be optically coupled to the light source module 1200. For example, the cover 1100 may diffuse, scatter, or excite light provided from the light source module 1200. The cover 1100 may be a kind of optical member. The cover 1100 can be coupled to the heat discharging body 1400. The cover 1100 may have an engaging portion that engages with the heat discharging body 1400.

The inner surface of the cover 1100 may be coated with a milky white paint. Milky white paints may contain a diffusing agent to diffuse light. The surface roughness of the inner surface of the cover 1100 may be formed larger than the surface roughness of the outer surface of the cover 1100. [ This is because light from the light source module 1200 is sufficiently scattered and diffused to be emitted to the outside.

The cover 1100 may be made of glass, plastic, polypropylene (PP), polyethylene (PE), polycarbonate (PC), or the like. Here, polycarbonate is excellent in light resistance, heat resistance and strength. The cover 1100 may be transparent so that the light source module 1200 is visible from the outside, but it is not limited thereto and may be opaque. The cover 1100 may be formed by blow molding.

The light source module 1200 may be disposed on one side of the heat discharger 1400 and the heat generated from the light source module 1200 may be conducted to the heat discharger 1400. The light source module 1200 may include a light source 1210, a connection plate 1230, and a connector 1250. The light source unit 1210 may include the light emitting device package according to the embodiment.

The member 1300 may be disposed on the upper surface of the heat discharging body 1400 and has a guide groove 1310 into which the plurality of light source portions 1210 and the connector 1250 are inserted. The guide groove 1310 may correspond to or align with the substrate and connector 1250 of the light source 1210.

The surface of the member 1300 may be coated or coated with a light reflecting material.

For example, the surface of the member 1300 may be coated or coated with a white paint. The member 1300 may be reflected by the inner surface of the cover 1100 and may reflect the light returning toward the light source module 1200 toward the cover 1100 again. Therefore, the light efficiency of the illumination device according to the embodiment can be improved.

The member 1300 may be made of an insulating material, for example. The connection plate 1230 of the light source module 1200 may include an electrically conductive material. Therefore, electrical contact can be made between the heat discharging body 1400 and the connecting plate 1230. The member 1300 may be formed of an insulating material so as to prevent an electrical short circuit between the connection plate 1230 and the heat discharger 1400. The heat dissipation member 1400 can dissipate heat by receiving heat from the light source module 1200 and heat from the power supply unit 1600.

The holder 1500 closes the receiving groove 1719 of the insulating portion 1710 of the inner case 1700. Therefore, the power supply unit 1600 housed in the insulating portion 1710 of the inner case 1700 can be hermetically sealed. The holder 1500 may have a guide protrusion 1510 and the guide protrusion 1510 may have a hole through which the protrusion 1610 of the power supply unit 1600 penetrates.

The power supply unit 1600 processes or converts electrical signals provided from the outside and provides the electrical signals to the light source module 1200. The power supply unit 1600 may be housed in the receiving groove 1719 of the inner case 1700 and may be sealed inside the inner case 1700 by the holder 1500. [ The power supply unit 1600 may include a protrusion 1610, a guide portion 1630, a base 1650, and an extension portion 1670.

The guide portion 1630 may have a shape protruding outward from one side of the base 1650. The guide portion 1630 can be inserted into the holder 1500. A plurality of components can be disposed on one side of the base 1650. The plurality of components may include, for example, a DC converter for converting an AC power supplied from an external power source into a DC power source, a driving chip for controlling driving of the light source module 1200, an ESD (ElectroStatic discharge protection device, but are not limited thereto.

The extension 1670 may have a shape protruding outward from the other side of the base 1650. The extension portion 1670 can be inserted into the connection portion 1750 of the inner case 1700 and can receive an external electrical signal. For example, the extension portion 1670 may be equal to or less than the width of the connection portion 1750 of the inner case 1700. Each of the "+ wire" and the "wire" may be electrically connected to the extension portion 1670 and the other end of the "wire" and the "wire" may be electrically connected to the socket 1800 .

The inner case 1700 may include a molding part together with the power supply part 1600 therein. The molding part is a part where the molding liquid is hardened, so that the power supply providing part 1600 can be fixed inside the inner case 1700.

6 shows a display device including a light emitting device package according to an embodiment.

6, the display device 800 includes a bottom cover 810, a reflection plate 820 disposed on the bottom cover 810, light emitting modules 830 and 835 for emitting light, a reflection plate 820 An optical sheet including a light guide plate 840 disposed in front of the light emitting modules 830 and 835 and guiding light emitted from the light emitting modules 830 and 835 toward the front of the display device and prism sheets 850 and 860 disposed in front of the light guide plate 840, An image signal output circuit 872 connected to the display panel 870 and supplying an image signal to the display panel 870; a display panel 870 disposed in front of the display panel 870; Gt; 880 &lt; / RTI &gt; Here, the bottom cover 810, the reflection plate 820, the light emitting modules 830 and 835, the light guide plate 840, and the optical sheet may form a backlight unit.

The light emitting module may include light emitting device packages 835 mounted on the substrate 830. The substrate 830 may be a PCB or the like. The light emitting device package 835 may be the embodiment described above with reference to FIG.

The bottom cover 810 can house components within the display device 800. [ Also, the reflection plate 820 may be formed as a separate component as shown in the drawing, or may be provided on the rear surface of the light guide plate 840 or on the front surface of the bottom cover 810 in a state of being coated with a highly reflective material .

Here, the reflection plate 820 can be made of a material having a high reflectance and can be used in an ultra-thin shape, and polyethylene terephthalate (PET) can be used.

The light guide plate 830 may be formed of polymethyl methacrylate (PMMA), polycarbonate (PC), or polyethylene (PE).

The first prism sheet 850 may be formed of a light-transmissive and elastic polymeric material on one side of the support film, and the polymer may have a prism layer in which a plurality of three-dimensional structures are repeatedly formed. Here, as shown in the drawings, the plurality of patterns may be provided with a floor and a valley repeatedly as stripes.

In the second prism sheet 860, the direction of the floor and the valley on one side of the supporting film may be perpendicular to the direction of the floor and the valley on one side of the supporting film in the first prism sheet 850. This is for evenly distributing the light transmitted from the light emitting module and the reflective sheet to the front surface of the display panel 1870.

Although not shown, a diffusion sheet may be disposed between the light guide plate 840 and the first prism sheet 850. The diffusion sheet may be made of polyester and polycarbonate-based materials, and the light incidence angle can be maximized by refracting and scattering light incident from the backlight unit. The diffusion sheet includes a support layer including a light diffusing agent, a first layer formed on the light exit surface (first prism sheet direction) and a light incidence surface (in the direction of the reflection sheet) . &Lt; / RTI &gt;

In an embodiment, the diffusion sheet, the first prism sheet 850, and the second prism sheet 860 make up an optical sheet, which may be made of other combinations, for example a microlens array, A combination of one prism sheet and a microlens array, or the like.

The display panel 870 may include a liquid crystal display (LCD) panel, and may include other types of display devices that require a light source in addition to the liquid crystal display panel 860.

7 shows a head lamp 900 including the light emitting device package according to the embodiment. 7, the head lamp 900 includes a light emitting module 901, a reflector 902, a shade 903, and a lens 904.

The light emitting module 901 may include a plurality of light emitting device packages (not shown) disposed on a substrate (not shown). At this time, the light emitting device package may be the embodiment described above with reference to FIG.

The reflector 902 reflects the light 911 emitted from the light emitting module 901 in a predetermined direction, for example, toward the front 912.

The shade 903 is disposed between the reflector 902 and the lens 904 and reflects off or reflects a part of the light reflected by the reflector 902 toward the lens 904 to form a light distribution pattern desired by the designer. The one side portion 903-1 and the other side portion 903-2 of the shade 903 may have different heights from each other.

The light emitted from the light emitting module 901 can be reflected by the reflector 902 and the shade 903 and then transmitted through the lens 904 and directed toward the front of the vehicle body. The lens 904 can refract the light reflected by the reflector 902 forward.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment of the present invention and are not necessarily limited to one embodiment. Further, the features, structures, effects, and the like illustrated in the embodiments can be combined and modified by other persons having ordinary skill in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

110: substrate 120: light emitting structure
130: conductive layer 140: first electrode
150: second electrode 160: bonding layer
170: pn junction layer 180: passivation layer
190: contact layer.

Claims (11)

Board;
A light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer disposed on the substrate;
A pn junction layer disposed under the substrate;
A bonding layer disposed between the substrate and the pn junction layer; And
And a first electrode electrically connecting the first conductive type semiconductor layer and the bonding layer through the substrate. The semiconductor device according to claim 1, wherein the pn junction layer
A first conductive type nitride semiconductor layer; And
And a second conductive type nitride semiconductor layer disposed between the first conductive type nitride semiconductor layer and the bonding layer, wherein the first conductive type nitride semiconductor layer and the second conductive type nitride semiconductor layer have a pn junction structure Light emitting element. The method according to claim 1,
Wherein one end of the first electrode is in contact with a lower surface of the first conductive type semiconductor layer and the other end of the first electrode is in contact with an upper surface of the bonding layer. The method of claim 3,
Wherein one end of the first electrode is protruded from an upper surface of the substrate. The method according to claim 1,
Wherein a plurality of first electrodes are disposed, a plurality of first electrodes are disposed apart from each other, one end of each of the plurality of first electrodes is in contact with a lower surface of the first conductive type semiconductor layer, And the other end of each of the electrodes is in contact with the upper surface of the bonding layer. The method according to claim 1,
And a contact layer disposed below the pn junction layer and in contact with the pn junction layer. The method according to claim 1,
A side surface of the light emitting structure, and a passivation layer disposed on a side surface of the pn junction layer. The method according to claim 1,
A conductive layer disposed on the second conductive type semiconductor layer; And
And a second electrode disposed on the conductive layer. 9. The method according to any one of claims 1 to 8,
Wherein the first electrode is made of a reflective material that reflects light. The plasma display panel of claim 9,
An upper surface in contact with the first conductive type semiconductor layer;
A lower surface contacting the bonding layer; And
And a side surface positioned between the upper surface and the lower surface,
Wherein a side surface of the first electrode is an inclined surface with respect to an upper surface of the substrate. 11. The method of claim 10,
Wherein an area of an interface between an upper surface of the first electrode and a lower surface of the first conductive type semiconductor layer is equal to or larger than one half of the total area of a lower surface of the first conductive type semiconductor layer.

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