KR20160029791A - 태양 전지 구조 및 이의 제조 방법 - Google Patents
태양 전지 구조 및 이의 제조 방법 Download PDFInfo
- Publication number
- KR20160029791A KR20160029791A KR1020167000131A KR20167000131A KR20160029791A KR 20160029791 A KR20160029791 A KR 20160029791A KR 1020167000131 A KR1020167000131 A KR 1020167000131A KR 20167000131 A KR20167000131 A KR 20167000131A KR 20160029791 A KR20160029791 A KR 20160029791A
- Authority
- KR
- South Korea
- Prior art keywords
- nanowire
- section
- electrode layer
- nanowires
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 238000000034 method Methods 0.000 title claims description 60
- 239000002070 nanowire Substances 0.000 claims abstract description 194
- 239000000463 material Substances 0.000 claims abstract description 69
- 239000004065 semiconductor Substances 0.000 claims abstract description 34
- 230000004888 barrier function Effects 0.000 claims abstract description 15
- 239000000969 carrier Substances 0.000 claims abstract description 13
- 230000006798 recombination Effects 0.000 claims abstract description 10
- 238000005215 recombination Methods 0.000 claims abstract description 10
- 239000010410 layer Substances 0.000 claims description 107
- 239000000758 substrate Substances 0.000 claims description 55
- 239000011159 matrix material Substances 0.000 claims description 17
- 229920000642 polymer Polymers 0.000 claims description 17
- 238000000151 deposition Methods 0.000 claims description 10
- 239000012790 adhesive layer Substances 0.000 claims description 8
- 239000002019 doping agent Substances 0.000 claims description 8
- 230000001681 protective effect Effects 0.000 claims description 6
- 230000000295 complement effect Effects 0.000 claims description 4
- 239000002904 solvent Substances 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 230000000694 effects Effects 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 22
- 235000012431 wafers Nutrition 0.000 description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 17
- 229910052710 silicon Inorganic materials 0.000 description 17
- 239000010703 silicon Substances 0.000 description 17
- 239000010408 film Substances 0.000 description 16
- 238000005516 engineering process Methods 0.000 description 13
- 230000008569 process Effects 0.000 description 11
- 239000010409 thin film Substances 0.000 description 11
- 239000004020 conductor Substances 0.000 description 10
- 229920006254 polymer film Polymers 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 230000010354 integration Effects 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 238000000231 atomic layer deposition Methods 0.000 description 6
- 230000007480 spreading Effects 0.000 description 6
- 238000003892 spreading Methods 0.000 description 6
- 239000003989 dielectric material Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 238000001465 metallisation Methods 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000004090 dissolution Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical group C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000003306 harvesting Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000008092 positive effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000011258 core-shell material Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- -1 e.g. Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000013383 initial experiment Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 230000000243 photosynthetic effect Effects 0.000 description 1
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000013047 polymeric layer Substances 0.000 description 1
- NNFCIKHAZHQZJG-UHFFFAOYSA-N potassium cyanide Chemical compound [K+].N#[C-] NNFCIKHAZHQZJG-UHFFFAOYSA-N 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000010079 rubber tapping Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 210000003462 vein Anatomy 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
-
- H01L31/04—
-
- H01L31/02021—
-
- H01L31/022466—
-
- H01L31/035227—
-
- H01L31/0445—
-
- H01L31/0693—
-
- H01L31/075—
-
- H01L31/18—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
- H10F10/144—Photovoltaic cells having only PN homojunction potential barriers comprising only Group III-V materials, e.g. GaAs,AlGaAs, or InP photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/163—Photovoltaic cells having only PN heterojunction potential barriers comprising only Group III-V materials, e.g. GaAs/AlGaAs or InP/GaInAs photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/17—Photovoltaic cells having only PIN junction potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
- H10F71/1276—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising growth substrates not made of Group III-V materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/129—Passivating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
- H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
- H10F77/1437—Quantum wires or nanorods
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
- H10F77/147—Shapes of bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Sustainable Development (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE1350687-8 | 2013-06-05 | ||
| SE1350687A SE537287C2 (sv) | 2013-06-05 | 2013-06-05 | En solcellsstruktur och en metod för tillverkning av densamma |
| PCT/SE2014/050685 WO2014196920A1 (en) | 2013-06-05 | 2014-06-05 | A solar cell structure and a method of its fabrication |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20160029791A true KR20160029791A (ko) | 2016-03-15 |
Family
ID=52008430
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020167000131A Withdrawn KR20160029791A (ko) | 2013-06-05 | 2014-06-05 | 태양 전지 구조 및 이의 제조 방법 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20160155870A1 (enExample) |
| EP (1) | EP3005424A4 (enExample) |
| JP (1) | JP2016526304A (enExample) |
| KR (1) | KR20160029791A (enExample) |
| CN (2) | CN105659390B (enExample) |
| HK (1) | HK1245506A1 (enExample) |
| SE (1) | SE537287C2 (enExample) |
| WO (1) | WO2014196920A1 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3016148A1 (en) | 2014-10-28 | 2016-05-04 | Sol Voltaics AB | Dual layer photovoltaic device |
| FR3031242B1 (fr) | 2014-12-29 | 2016-12-30 | Aledia | Procede de fabrication de nanofils ou de microfils semiconducteurs a pieds isoles |
| DE102017104906A1 (de) * | 2017-03-08 | 2018-09-13 | Olav Birlem | Anordnung und Verfahren zum Bereitstellen einer Vielzahl von Nanodrähten |
| CN107310244A (zh) * | 2017-06-22 | 2017-11-03 | 大连保税区金宝至电子有限公司 | 太阳能电极印刷网版的蚀刻加工方法 |
| US10565015B2 (en) | 2017-09-18 | 2020-02-18 | The Regents Of The University Of Michigan | Spiroketal-based C2-symmetric scaffold for asymmetric catalysis |
| CN109616553B (zh) * | 2018-11-22 | 2020-06-30 | 中南大学 | 一种新型纤锌矿GaAs核壳纳米线光电探测器的制备方法 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04296060A (ja) * | 1991-03-26 | 1992-10-20 | Hitachi Ltd | 太陽電池 |
| US5322573A (en) * | 1992-10-02 | 1994-06-21 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | InP solar cell with window layer |
| EP0743686A3 (en) * | 1995-05-15 | 1998-12-02 | Matsushita Electric Industrial Co., Ltd | Precursor for semiconductor thin films and method for producing semiconductor thin films |
| US20060207647A1 (en) * | 2005-03-16 | 2006-09-21 | General Electric Company | High efficiency inorganic nanorod-enhanced photovoltaic devices |
| US8362460B2 (en) * | 2006-08-11 | 2013-01-29 | Cyrium Technologies Incorporated | Method of fabricating semiconductor devices on a group IV substrate with controlled interface properties and diffusion tails |
| EP1892769A2 (en) * | 2006-08-25 | 2008-02-27 | General Electric Company | Single conformal junction nanowire photovoltaic devices |
| AU2008275956A1 (en) * | 2007-07-19 | 2009-01-22 | California Institute Of Technology | Structures of ordered arrays of semiconductors |
| US8106289B2 (en) * | 2007-12-31 | 2012-01-31 | Banpil Photonics, Inc. | Hybrid photovoltaic device |
| KR100953448B1 (ko) * | 2008-04-02 | 2010-04-20 | 한국기계연구원 | 반도체 나노소재를 이용한 광전 변환 장치 및 그 제조 방법 |
| US20100012190A1 (en) * | 2008-07-16 | 2010-01-21 | Hajime Goto | Nanowire photovoltaic cells and manufacture method thereof |
| KR101040956B1 (ko) * | 2009-02-26 | 2011-06-16 | 전자부품연구원 | 산화아연 나노와이어를 이용한 박막 실리콘 태양전지 및 그의 제조방법 |
| US8952354B2 (en) * | 2009-04-15 | 2015-02-10 | Sol Voltaics Ab | Multi-junction photovoltaic cell with nanowires |
| US20120192934A1 (en) * | 2009-06-21 | 2012-08-02 | The Regents Of The University Of California | Nanostructure, Photovoltaic Device, and Method of Fabrication Thereof |
| EP2507842A2 (en) * | 2009-11-30 | 2012-10-10 | California Institute of Technology | Three-dimensional patterning methods and related devices |
| US20110146744A1 (en) * | 2009-12-23 | 2011-06-23 | General Electric Company | Photovoltaic cell |
| JP2011138804A (ja) * | 2009-12-25 | 2011-07-14 | Honda Motor Co Ltd | ナノワイヤ太陽電池及びその製造方法 |
| US20110240099A1 (en) * | 2010-03-30 | 2011-10-06 | Ellinger Carolyn R | Photovoltaic nanowire device |
| JP2012056015A (ja) * | 2010-09-08 | 2012-03-22 | Honda Motor Co Ltd | ナノワイヤデバイスの製造方法 |
| US20140096816A1 (en) * | 2010-12-22 | 2014-04-10 | Harry A. Atwater | Heterojunction microwire array semiconductor devices |
| CN102157617B (zh) * | 2011-01-31 | 2013-06-19 | 常州大学 | 一种硅基纳米线太阳电池的制备方法 |
-
2013
- 2013-06-05 SE SE1350687A patent/SE537287C2/sv not_active IP Right Cessation
-
2014
- 2014-06-05 WO PCT/SE2014/050685 patent/WO2014196920A1/en not_active Ceased
- 2014-06-05 KR KR1020167000131A patent/KR20160029791A/ko not_active Withdrawn
- 2014-06-05 JP JP2016518303A patent/JP2016526304A/ja active Pending
- 2014-06-05 US US14/896,369 patent/US20160155870A1/en not_active Abandoned
- 2014-06-05 CN CN201480035600.XA patent/CN105659390B/zh not_active Expired - Fee Related
- 2014-06-05 CN CN201710962476.7A patent/CN107799612A/zh active Pending
- 2014-06-05 EP EP14807588.0A patent/EP3005424A4/en active Pending
-
2018
- 2018-04-11 HK HK18104721.8A patent/HK1245506A1/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| SE537287C2 (sv) | 2015-03-24 |
| JP2016526304A (ja) | 2016-09-01 |
| HK1245506A1 (zh) | 2018-08-24 |
| EP3005424A4 (en) | 2017-01-11 |
| CN105659390B (zh) | 2017-11-14 |
| CN107799612A (zh) | 2018-03-13 |
| EP3005424A1 (en) | 2016-04-13 |
| WO2014196920A1 (en) | 2014-12-11 |
| US20160155870A1 (en) | 2016-06-02 |
| CN105659390A (zh) | 2016-06-08 |
| SE1350687A1 (sv) | 2014-12-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP7564974B2 (ja) | 太陽光電池及び太陽光発電モジュール | |
| CN104167454B (zh) | 太阳能电池及其制造方法 | |
| CN101803035B (zh) | 基于纳米线的太阳能电池结构 | |
| EP2797124B1 (en) | Method for manufacturing a solar cell | |
| JP5512086B2 (ja) | 背面側接触のためのｖｉａを有する倒置変性ソーラーセル構造 | |
| EP2522031B1 (en) | Solar panel module and method for manufacturing such a solar panel module | |
| HK1245506A1 (zh) | 太阳能电池结构及其制造方法 | |
| US20140360571A1 (en) | Solar cell and manufacturing method thereof | |
| US20140196779A1 (en) | Multi-junction solar cells with through-substrate vias | |
| JP7502383B2 (ja) | パターニングされたエミッタを有する多接合太陽電池及び該太陽電池の製造方法 | |
| CN101207078A (zh) | 具有旁路二极管的反向变质太阳能电池 | |
| US20140373911A1 (en) | Solar cell | |
| CN103178132B (zh) | 太阳能电池 | |
| CN103035779A (zh) | 光伏装置 | |
| US20240212946A1 (en) | Integrated Bypass Diode Schemes for Solar Modules | |
| US8772630B2 (en) | Solar cell and method of manufacturing the same | |
| WO2015138764A1 (en) | Multi-junction solar cells with through-substrate vias | |
| EP2903037B1 (en) | Fabrication method for back-contact heterojunction solar cell | |
| CN116368626A (zh) | 光伏设备和用于制造光伏设备的方法 | |
| US20150034155A1 (en) | Optoelectronic device and the manufacturing method thereof | |
| CN107924958B (zh) | 光电转换元件 | |
| JP6476015B2 (ja) | 光電変換素子およびその製造方法 | |
| CN116072739A (zh) | 太阳能电池及太阳能电池的制备方法、光伏组件 | |
| JP6198813B2 (ja) | 光電変換素子、光電変換モジュールおよび太陽光発電システム | |
| KR101989738B1 (ko) | 화합물 반도체 태양전지 및 이의 제조 방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
Patent event date: 20160105 Patent event code: PA01051R01D Comment text: International Patent Application |
|
| PG1501 | Laying open of application | ||
| PC1203 | Withdrawal of no request for examination | ||
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |