JP2016526304A - 太陽電池構造及びその製造方法 - Google Patents

太陽電池構造及びその製造方法 Download PDF

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Publication number
JP2016526304A
JP2016526304A JP2016518303A JP2016518303A JP2016526304A JP 2016526304 A JP2016526304 A JP 2016526304A JP 2016518303 A JP2016518303 A JP 2016518303A JP 2016518303 A JP2016518303 A JP 2016518303A JP 2016526304 A JP2016526304 A JP 2016526304A
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Prior art keywords
nanowire
section
solar cell
cell structure
electrode layer
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JP2016518303A
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Japanese (ja)
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JP2016526304A5 (enExample
Inventor
イングヴァル オベーリ，
イングヴァル オベーリ，
ヨナス オールソン，
ヨナス オールソン，
ダミル アソリ，
ダミル アソリ，
ニクラス アンツ，
ニクラス アンツ，
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Sol Voltaics AB
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Sol Voltaics AB
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Publication of JP2016526304A publication Critical patent/JP2016526304A/ja
Publication of JP2016526304A5 publication Critical patent/JP2016526304A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/144—Photovoltaic cells having only PN homojunction potential barriers comprising only Group III-V materials, e.g. GaAs,AlGaAs, or InP photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/163—Photovoltaic cells having only PN heterojunction potential barriers comprising only Group III-V materials, e.g. GaAs/AlGaAs or InP/GaInAs photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10F71/1276—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising growth substrates not made of Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/129—Passivating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
    • H10F77/1437—Quantum wires or nanorods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

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  • Photovoltaic Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
JP2016518303A 2013-06-05 2014-06-05 太陽電池構造及びその製造方法 Pending JP2016526304A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SE1350687-8 2013-06-05
SE1350687A SE537287C2 (sv) 2013-06-05 2013-06-05 En solcellsstruktur och en metod för tillverkning av densamma
PCT/SE2014/050685 WO2014196920A1 (en) 2013-06-05 2014-06-05 A solar cell structure and a method of its fabrication

Publications (2)

Publication Number Publication Date
JP2016526304A true JP2016526304A (ja) 2016-09-01
JP2016526304A5 JP2016526304A5 (enExample) 2017-06-22

Family

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JP2016518303A Pending JP2016526304A (ja) 2013-06-05 2014-06-05 太陽電池構造及びその製造方法

Country Status (8)

Country Link
US (1) US20160155870A1 (enExample)
EP (1) EP3005424A4 (enExample)
JP (1) JP2016526304A (enExample)
KR (1) KR20160029791A (enExample)
CN (2) CN105659390B (enExample)
HK (1) HK1245506A1 (enExample)
SE (1) SE537287C2 (enExample)
WO (1) WO2014196920A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190126355A (ko) * 2017-03-08 2019-11-11 나노와이어드 게엠베하 다수의 나노와이어들을 제공하기 위한 시스템 및 방법

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* Cited by examiner, † Cited by third party
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EP3016148A1 (en) 2014-10-28 2016-05-04 Sol Voltaics AB Dual layer photovoltaic device
FR3031242B1 (fr) 2014-12-29 2016-12-30 Aledia Procede de fabrication de nanofils ou de microfils semiconducteurs a pieds isoles
CN107310244A (zh) * 2017-06-22 2017-11-03 大连保税区金宝至电子有限公司 太阳能电极印刷网版的蚀刻加工方法
US10565015B2 (en) 2017-09-18 2020-02-18 The Regents Of The University Of Michigan Spiroketal-based C2-symmetric scaffold for asymmetric catalysis
CN109616553B (zh) * 2018-11-22 2020-06-30 中南大学 一种新型纤锌矿GaAs核壳纳米线光电探测器的制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04296060A (ja) * 1991-03-26 1992-10-20 Hitachi Ltd 太陽電池
JP2009253269A (ja) * 2008-04-02 2009-10-29 Korea Mach Res Inst 半導体ナノ素材を利用した光電変換装置およびその製造方法｛ｐｈｏｔｏｅｌｅｃｔｒｉｃｃｏｎｖｅｒｓｉｏｎｄｅｖｉｃｅｕｓｉｎｇｓｅｍｉｃｏｎｄｕｃｔｏｒｎａｎｏｍａｔｅｒｉａｌｓａｎｄｍｅｔｈｏｄｏｆｍａｎｕｆａｃｔｕｒｉｎｇｔｈｅｓａｍｅ｝
US20110240099A1 (en) * 2010-03-30 2011-10-06 Ellinger Carolyn R Photovoltaic nanowire device
JP2012056015A (ja) * 2010-09-08 2012-03-22 Honda Motor Co Ltd ナノワイヤデバイスの製造方法
WO2012088481A2 (en) * 2010-12-22 2012-06-28 California Institute Of Technology Heterojunction microwire array semiconductor devices

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Patent Citations (5)

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Publication number Priority date Publication date Assignee Title
JPH04296060A (ja) * 1991-03-26 1992-10-20 Hitachi Ltd 太陽電池
JP2009253269A (ja) * 2008-04-02 2009-10-29 Korea Mach Res Inst 半導体ナノ素材を利用した光電変換装置およびその製造方法｛ｐｈｏｔｏｅｌｅｃｔｒｉｃｃｏｎｖｅｒｓｉｏｎｄｅｖｉｃｅｕｓｉｎｇｓｅｍｉｃｏｎｄｕｃｔｏｒｎａｎｏｍａｔｅｒｉａｌｓａｎｄｍｅｔｈｏｄｏｆｍａｎｕｆａｃｔｕｒｉｎｇｔｈｅｓａｍｅ｝
US20110240099A1 (en) * 2010-03-30 2011-10-06 Ellinger Carolyn R Photovoltaic nanowire device
JP2012056015A (ja) * 2010-09-08 2012-03-22 Honda Motor Co Ltd ナノワイヤデバイスの製造方法
WO2012088481A2 (en) * 2010-12-22 2012-06-28 California Institute Of Technology Heterojunction microwire array semiconductor devices

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190126355A (ko) * 2017-03-08 2019-11-11 나노와이어드 게엠베하 다수의 나노와이어들을 제공하기 위한 시스템 및 방법
KR102551975B1 (ko) 2017-03-08 2023-07-06 나노와이어드 게엠베하 다수의 나노와이어들을 제공하기 위한 시스템 및 방법

Also Published As

Publication number Publication date
SE537287C2 (sv) 2015-03-24
HK1245506A1 (zh) 2018-08-24
EP3005424A4 (en) 2017-01-11
CN105659390B (zh) 2017-11-14
CN107799612A (zh) 2018-03-13
EP3005424A1 (en) 2016-04-13
WO2014196920A1 (en) 2014-12-11
US20160155870A1 (en) 2016-06-02
KR20160029791A (ko) 2016-03-15
CN105659390A (zh) 2016-06-08
SE1350687A1 (sv) 2014-12-06

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