SE537287C2 - En solcellsstruktur och en metod för tillverkning av densamma - Google Patents
En solcellsstruktur och en metod för tillverkning av densamma Download PDFInfo
- Publication number
- SE537287C2 SE537287C2 SE1350687A SE1350687A SE537287C2 SE 537287 C2 SE537287 C2 SE 537287C2 SE 1350687 A SE1350687 A SE 1350687A SE 1350687 A SE1350687 A SE 1350687A SE 537287 C2 SE537287 C2 SE 537287C2
- Authority
- SE
- Sweden
- Prior art keywords
- nanowire
- solar cell
- layer
- section
- cell structure
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract description 7
- 239000002070 nanowire Substances 0.000 claims abstract description 132
- 239000010410 layer Substances 0.000 claims abstract description 81
- 238000000034 method Methods 0.000 claims abstract description 33
- 239000012790 adhesive layer Substances 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 45
- 239000000758 substrate Substances 0.000 claims description 34
- 229920000642 polymer Polymers 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 15
- 239000011159 matrix material Substances 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 10
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- 239000002904 solvent Substances 0.000 claims description 3
- 239000010408 film Substances 0.000 description 18
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 16
- 238000005516 engineering process Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 239000010409 thin film Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 230000010354 integration Effects 0.000 description 7
- 229920006254 polymer film Polymers 0.000 description 7
- 238000000231 atomic layer deposition Methods 0.000 description 6
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- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
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- 150000001875 compounds Chemical class 0.000 description 2
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- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- XUKUURHRXDUEBC-KAYWLYCHSA-N Atorvastatin Chemical compound C=1C=CC=CC=1C1=C(C=2C=CC(F)=CC=2)N(CC[C@@H](O)C[C@@H](O)CC(O)=O)C(C(C)C)=C1C(=O)NC1=CC=CC=C1 XUKUURHRXDUEBC-KAYWLYCHSA-N 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
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- 238000005229 chemical vapour deposition Methods 0.000 description 1
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- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
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- 238000010297 mechanical methods and process Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000013528 metallic particle Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- NNFCIKHAZHQZJG-UHFFFAOYSA-N potassium cyanide Chemical compound [K+].N#[C-] NNFCIKHAZHQZJG-UHFFFAOYSA-N 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
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- 238000005476 soldering Methods 0.000 description 1
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- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
- H10F10/144—Photovoltaic cells having only PN homojunction potential barriers comprising only Group III-V materials, e.g. GaAs,AlGaAs, or InP photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/163—Photovoltaic cells having only PN heterojunction potential barriers comprising only Group III-V materials, e.g. GaAs/AlGaAs or InP/GaInAs photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/17—Photovoltaic cells having only PIN junction potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
- H10F71/1276—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising growth substrates not made of Group III-V materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/129—Passivating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
- H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
- H10F77/1437—Quantum wires or nanorods
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
- H10F77/147—Shapes of bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Sustainable Development (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
Priority Applications (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE1350687A SE537287C2 (sv) | 2013-06-05 | 2013-06-05 | En solcellsstruktur och en metod för tillverkning av densamma |
| CN201480035600.XA CN105659390B (zh) | 2013-06-05 | 2014-06-05 | 太阳能电池结构及其制造方法 |
| PCT/SE2014/050685 WO2014196920A1 (en) | 2013-06-05 | 2014-06-05 | A solar cell structure and a method of its fabrication |
| CN201710962476.7A CN107799612A (zh) | 2013-06-05 | 2014-06-05 | 太阳能电池结构及其制造方法 |
| EP14807588.0A EP3005424A4 (en) | 2013-06-05 | 2014-06-05 | A solar cell structure and a method of its fabrication |
| JP2016518303A JP2016526304A (ja) | 2013-06-05 | 2014-06-05 | 太陽電池構造及びその製造方法 |
| US14/896,369 US20160155870A1 (en) | 2013-06-05 | 2014-06-05 | A solar cell structure and a method of its fabrication |
| KR1020167000131A KR20160029791A (ko) | 2013-06-05 | 2014-06-05 | 태양 전지 구조 및 이의 제조 방법 |
| HK18104721.8A HK1245506A1 (zh) | 2013-06-05 | 2018-04-11 | 太阳能电池结构及其制造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE1350687A SE537287C2 (sv) | 2013-06-05 | 2013-06-05 | En solcellsstruktur och en metod för tillverkning av densamma |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| SE1350687A1 SE1350687A1 (sv) | 2014-12-06 |
| SE537287C2 true SE537287C2 (sv) | 2015-03-24 |
Family
ID=52008430
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE1350687A SE537287C2 (sv) | 2013-06-05 | 2013-06-05 | En solcellsstruktur och en metod för tillverkning av densamma |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20160155870A1 (enExample) |
| EP (1) | EP3005424A4 (enExample) |
| JP (1) | JP2016526304A (enExample) |
| KR (1) | KR20160029791A (enExample) |
| CN (2) | CN105659390B (enExample) |
| HK (1) | HK1245506A1 (enExample) |
| SE (1) | SE537287C2 (enExample) |
| WO (1) | WO2014196920A1 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3016148A1 (en) | 2014-10-28 | 2016-05-04 | Sol Voltaics AB | Dual layer photovoltaic device |
| FR3031242B1 (fr) | 2014-12-29 | 2016-12-30 | Aledia | Procede de fabrication de nanofils ou de microfils semiconducteurs a pieds isoles |
| DE102017104906A1 (de) * | 2017-03-08 | 2018-09-13 | Olav Birlem | Anordnung und Verfahren zum Bereitstellen einer Vielzahl von Nanodrähten |
| CN107310244A (zh) * | 2017-06-22 | 2017-11-03 | 大连保税区金宝至电子有限公司 | 太阳能电极印刷网版的蚀刻加工方法 |
| US10565015B2 (en) | 2017-09-18 | 2020-02-18 | The Regents Of The University Of Michigan | Spiroketal-based C2-symmetric scaffold for asymmetric catalysis |
| CN109616553B (zh) * | 2018-11-22 | 2020-06-30 | 中南大学 | 一种新型纤锌矿GaAs核壳纳米线光电探测器的制备方法 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04296060A (ja) * | 1991-03-26 | 1992-10-20 | Hitachi Ltd | 太陽電池 |
| US5322573A (en) * | 1992-10-02 | 1994-06-21 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | InP solar cell with window layer |
| EP0743686A3 (en) * | 1995-05-15 | 1998-12-02 | Matsushita Electric Industrial Co., Ltd | Precursor for semiconductor thin films and method for producing semiconductor thin films |
| US20060207647A1 (en) * | 2005-03-16 | 2006-09-21 | General Electric Company | High efficiency inorganic nanorod-enhanced photovoltaic devices |
| US8362460B2 (en) * | 2006-08-11 | 2013-01-29 | Cyrium Technologies Incorporated | Method of fabricating semiconductor devices on a group IV substrate with controlled interface properties and diffusion tails |
| EP1892769A2 (en) * | 2006-08-25 | 2008-02-27 | General Electric Company | Single conformal junction nanowire photovoltaic devices |
| AU2008275956A1 (en) * | 2007-07-19 | 2009-01-22 | California Institute Of Technology | Structures of ordered arrays of semiconductors |
| US8106289B2 (en) * | 2007-12-31 | 2012-01-31 | Banpil Photonics, Inc. | Hybrid photovoltaic device |
| KR100953448B1 (ko) * | 2008-04-02 | 2010-04-20 | 한국기계연구원 | 반도체 나노소재를 이용한 광전 변환 장치 및 그 제조 방법 |
| US20100012190A1 (en) * | 2008-07-16 | 2010-01-21 | Hajime Goto | Nanowire photovoltaic cells and manufacture method thereof |
| KR101040956B1 (ko) * | 2009-02-26 | 2011-06-16 | 전자부품연구원 | 산화아연 나노와이어를 이용한 박막 실리콘 태양전지 및 그의 제조방법 |
| US8952354B2 (en) * | 2009-04-15 | 2015-02-10 | Sol Voltaics Ab | Multi-junction photovoltaic cell with nanowires |
| US20120192934A1 (en) * | 2009-06-21 | 2012-08-02 | The Regents Of The University Of California | Nanostructure, Photovoltaic Device, and Method of Fabrication Thereof |
| EP2507842A2 (en) * | 2009-11-30 | 2012-10-10 | California Institute of Technology | Three-dimensional patterning methods and related devices |
| US20110146744A1 (en) * | 2009-12-23 | 2011-06-23 | General Electric Company | Photovoltaic cell |
| JP2011138804A (ja) * | 2009-12-25 | 2011-07-14 | Honda Motor Co Ltd | ナノワイヤ太陽電池及びその製造方法 |
| US20110240099A1 (en) * | 2010-03-30 | 2011-10-06 | Ellinger Carolyn R | Photovoltaic nanowire device |
| JP2012056015A (ja) * | 2010-09-08 | 2012-03-22 | Honda Motor Co Ltd | ナノワイヤデバイスの製造方法 |
| US20140096816A1 (en) * | 2010-12-22 | 2014-04-10 | Harry A. Atwater | Heterojunction microwire array semiconductor devices |
| CN102157617B (zh) * | 2011-01-31 | 2013-06-19 | 常州大学 | 一种硅基纳米线太阳电池的制备方法 |
-
2013
- 2013-06-05 SE SE1350687A patent/SE537287C2/sv not_active IP Right Cessation
-
2014
- 2014-06-05 WO PCT/SE2014/050685 patent/WO2014196920A1/en not_active Ceased
- 2014-06-05 KR KR1020167000131A patent/KR20160029791A/ko not_active Withdrawn
- 2014-06-05 JP JP2016518303A patent/JP2016526304A/ja active Pending
- 2014-06-05 US US14/896,369 patent/US20160155870A1/en not_active Abandoned
- 2014-06-05 CN CN201480035600.XA patent/CN105659390B/zh not_active Expired - Fee Related
- 2014-06-05 CN CN201710962476.7A patent/CN107799612A/zh active Pending
- 2014-06-05 EP EP14807588.0A patent/EP3005424A4/en active Pending
-
2018
- 2018-04-11 HK HK18104721.8A patent/HK1245506A1/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JP2016526304A (ja) | 2016-09-01 |
| HK1245506A1 (zh) | 2018-08-24 |
| EP3005424A4 (en) | 2017-01-11 |
| CN105659390B (zh) | 2017-11-14 |
| CN107799612A (zh) | 2018-03-13 |
| EP3005424A1 (en) | 2016-04-13 |
| WO2014196920A1 (en) | 2014-12-11 |
| US20160155870A1 (en) | 2016-06-02 |
| KR20160029791A (ko) | 2016-03-15 |
| CN105659390A (zh) | 2016-06-08 |
| SE1350687A1 (sv) | 2014-12-06 |
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