KR20160000648A - Light emitting device package, backlight unit, light converting sheet and its manufacturing method - Google Patents

Light emitting device package, backlight unit, light converting sheet and its manufacturing method Download PDF

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Publication number
KR20160000648A
KR20160000648A KR1020140078051A KR20140078051A KR20160000648A KR 20160000648 A KR20160000648 A KR 20160000648A KR 1020140078051 A KR1020140078051 A KR 1020140078051A KR 20140078051 A KR20140078051 A KR 20140078051A KR 20160000648 A KR20160000648 A KR 20160000648A
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South Korea
Prior art keywords
light emitting
emitting device
base layer
lead frame
light
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KR1020140078051A
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Korean (ko)
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KR101590472B1 (en
Inventor
오승현
김평국
이승훈
민천기
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주식회사 루멘스
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Priority to KR1020140078051A priority Critical patent/KR101590472B1/en
Publication of KR20160000648A publication Critical patent/KR20160000648A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting

Abstract

The present invention relates to a light emitting device package which can be used for a display or illumination, a backlight unit, a light converting sheet, and a manufacturing method for a light emitting device package. The light emitting device package includes: a light emitting device; a lead frame having a mounting surface to mount the light emitting device, wherein a first electrode is installed in one direction from an electrode separation space and a second electrode is installed in the other direction; a first insulation bonding layer installed in a rest part of the lead frame except for the mounting surface; a first base layer fixed onto the lead frame by being pressed by the first insulation bonding layer and having a first through hole unit to obtain an optical path of light generated in the light emitting device; and a first light conversion material filled in the first through hole unit of the first base layer.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device package, a backlight unit, a light conversion sheet,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device package, a backlight unit, a light conversion sheet, and a method of manufacturing a light emitting device package, and more particularly to a light emitting device package, a backlight unit, And a method of manufacturing the package.

A light emitting diode (LED) is a kind of semiconductor device that can emit light of various colors by forming a light emitting source through the formation of a PN diode of a compound semiconductor. Such a light emitting device has a long lifetime, can be reduced in size and weight, and can be driven at a low voltage. In addition, these LEDs are resistant to shock and vibration, do not require preheating time and complicated driving, can be packaged after being mounted on a substrate or lead frame in various forms, so that they can be modularized for various purposes and used as a backlight unit A lighting device, and the like.

In the conventional light emitting device package, phosphors are provided by disposing the phosphors in the reflection cup portion of the reflective encapsulant, cutting the phosphor sheet into individual phosphors, and bonding the phosphors on the light emitting device or the translucent encapsulant. The process time and process cost required for the individual bonding process are wasted.

SUMMARY OF THE INVENTION The present invention has been accomplished to solve various problems including the above problems, and it is an object of the present invention to provide a method of manufacturing a light emitting device, in which a plurality of through hole portions formed in a base layer are simply filled with a light conversion material such as a fluorescent material and a quantum dot, The process time and process cost are greatly reduced, the process is simplified, the cost of the product is lowered, the productivity is improved, and the base layer is not energized by the insulating adhesive layer, so that various noise A light emitting device package, a backlight unit, a light conversion sheet, and a light emitting element that can prevent the occurrence of short circuits or electromagnetic waves, maximize the adhesive force between components, and maximize the heat radiation performance by using a metal base layer It is another object of the present invention to provide a method of manufacturing an element package. However, these problems are exemplary and do not limit the scope of the present invention.

According to an aspect of the present invention, there is provided a light emitting device package including: a light emitting element; A lead frame having a first electrode on one side of the electrode separation space, a second electrode on the other side of the electrode assembly, and a seating surface for seating the light emitting device; A first insulating adhesive layer provided on a remaining portion of the lead frame except for the seating surface; A first base layer formed on the lead frame by press bonding by the first insulating adhesive layer and having a first through hole so as to secure a light path of light generated from the light emitting device; And a first photo-conversion material filled in the first through hole portion of the first base layer.

According to an aspect of the present invention, the first light conversion material may be screen printed on the first through hole portion of the first base layer so that its thickness can be controlled according to the thickness of the first base layer .

According to an aspect of the present invention, the first photo-conversion material is selected from at least one of a phosphor, a quantum dot, a light-transmitting encapsulant, and combinations thereof. The thickness of the first photo- And at least one of the first base layer and the second base layer is formed by selecting at least one of a flat plate type, a convex convex type, a concave concave type and combinations thereof, , A convex convex shape, a concave concave concave shape, an upwardly bent type with an end bent upwardly, a downwardly bent type bent at an end thereof, and combinations thereof, wherein the first base layer The first through hole portion may include at least one of a rectangular hole portion, a circular hole portion, a plurality of square hole portions, a plurality of circular hole portions, a radial fin type hole portion, a helical pin type hole portion, It can be done by selecting one or more.

Further, according to an aspect of the present invention, the lead frame may be formed with a chip accommodating portion such that at least a part of the light emitting device can be inserted.

The light emitting device package according to the present invention is provided between the lead frame and the first insulating adhesive layer and is fixed by press bonding onto the lead frame by a second insulating adhesive layer, And a second base layer having a second through hole formed therein to secure a light path of the light.

According to an aspect of the present invention, the first base layer is excellent in heat dissipation and is made of the same metal material as the lead frame, and the first photo-conversion material may include quantum dots.

According to an aspect of the present invention, there is provided a backlight unit including: a light emitting element; A lead frame having a first electrode on one side of the electrode separation space, a second electrode on the other side of the electrode assembly, and a seating surface for seating the light emitting device; A first insulating adhesive layer provided on a remaining portion of the lead frame except for the seating surface; A first base layer formed on the lead frame by press bonding by the first insulating adhesive layer and having a first through hole so as to secure a light path of light generated from the light emitting device; A first photo-conversion material filled in the first through hole portion of the first base layer; And a light guide plate installed in an optical path of the light emitting device.

According to an aspect of the present invention, there is provided a light conversion sheet comprising: a first base layer having a first through hole formed therein to secure a light path of light emitted from a light emitting device; A first photo-conversion material filled in the first through hole portion of the first base layer; And a first insulating adhesive layer made of an insulating adhesive material so that the first base layer can be adhered to the lead frame of the light emitting device package in an insulated state and the first insulating adhesive layer provided on the lead frame facing surface of the first base layer .

According to another aspect of the present invention, there is provided a method of manufacturing a light emitting device package, the method comprising: providing a first electrode on one side of the electrode separation space, a second electrode on the other side of the electrode separation space, Preparing a lead frame in which a seating surface is formed so that the device can be seated; Placing the light emitting device on the seating surface of the lead frame; Forming a first through hole in the first base layer so as to secure a light path of the light generated in the light emitting device, screen printing and charging the first photo conversion material in the first through hole portion of the first base layer, Preparing a light conversion sheet by providing a first insulating adhesive layer made of an insulating adhesive material on the lead frame facing surface of the first base layer so that the first base layer can be adhered to the lead frame in an insulated state; And pressing the light conversion sheet with a press to fix the light conversion sheet to the lead frame.

According to some embodiments of the present invention as described above, the phototransducing material such as the fluorescent material and the quantum dot can be simply charged in a batch, and pressed together on the lead frame at a time to greatly reduce the processing time and process cost, By simplifying the process, it is possible to reduce the unit cost of the product, improve the productivity, prevent the generation of various noises, shorts and electromagnetic waves, maximize the adhesion force between the parts, and maximize the heat radiation performance by using the base layer of metal And the like. Of course, the scope of the present invention is not limited by these effects.

1 is an exploded perspective view of a light emitting device package according to some embodiments of the present invention.
Fig. 2 is a fragmentary assembled sectional view of the light emitting device package of Fig. 1. Fig.
3 is a cross-sectional view illustrating a light emitting device package according to some other embodiments of the present invention.
4 is a cross-sectional view illustrating a light emitting device package according to still another embodiment of the present invention.
5 is a cross-sectional view illustrating a light emitting device package according to still another embodiment of the present invention.
6 is a cross-sectional view illustrating a light emitting device package according to still another embodiment of the present invention.
7 is a cross-sectional view illustrating a light emitting device package according to still another embodiment of the present invention.
8 is a perspective view illustrating a light conversion sheet according to some embodiments of the present invention.
Figs. 9 to 12 are plan views showing various embodiments of the first through hole portion of the light conversion sheet of Fig.
FIGS. 13 to 16 are cross-sectional views showing steps of manufacturing a light emitting device package according to some embodiments of the present invention.
17 is a cross-sectional view illustrating a backlight unit according to some embodiments of the present invention.
18 is a flowchart illustrating a method of manufacturing a light emitting device package according to some embodiments of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

The embodiments of the present invention are described in order to more fully explain the present invention to those skilled in the art, and the following embodiments may be modified in various other forms, The present invention is not limited to the embodiment. Rather, these embodiments are provided so that this disclosure will be more thorough and complete, and will fully convey the concept of the invention to those skilled in the art. In the drawings, the thickness and size of each layer are exaggerated for convenience and clarity of explanation.

It is to be understood that throughout the specification, when an element such as a film, region or substrate is referred to as being "on", "connected to", "laminated" or "coupled to" another element, It will be appreciated that elements may be directly "on", "connected", "laminated" or "coupled" to another element, or there may be other elements intervening therebetween. On the other hand, when one element is referred to as being "directly on", "directly connected", or "directly coupled" to another element, it is interpreted that there are no other components intervening therebetween do. Like numbers refer to like elements. As used herein, the term "and / or" includes any and all combinations of one or more of the listed items.

Although the terms first, second, etc. are used herein to describe various elements, components, regions, layers and / or portions, these members, components, regions, layers and / It is obvious that no. These terms are only used to distinguish one member, component, region, layer or section from another region, layer or section. Thus, a first member, component, region, layer or section described below may refer to a second member, component, region, layer or section without departing from the teachings of the present invention.

Also, relative terms such as "top" or "above" and "under" or "below" can be used herein to describe the relationship of certain elements to other elements as illustrated in the Figures. Relative terms are intended to include different orientations of the device in addition to those depicted in the Figures. For example, if the element is inverted in the figures, the elements depicted as being on the upper surface of the other elements will have a direction on the lower surface of the other elements. Thus, the example "top" may include both "under" and "top" directions depending on the particular orientation of the figure. If the elements are oriented in different directions (rotated 90 degrees with respect to the other direction), the relative descriptions used herein can be interpreted accordingly.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a," "an," and "the" include singular forms unless the context clearly dictates otherwise. Also, " comprise "and / or" comprising "when used herein should be interpreted as specifying the presence of stated shapes, numbers, steps, operations, elements, elements, and / And does not preclude the presence or addition of one or more other features, integers, operations, elements, elements, and / or groups.

Hereinafter, embodiments of the present invention will be described with reference to the drawings schematically showing ideal embodiments of the present invention. In the figures, for example, variations in the shape shown may be expected, depending on manufacturing techniques and / or tolerances. Accordingly, the embodiments of the present invention should not be construed as limited to the particular shapes of the regions shown herein, but should include, for example, changes in shape resulting from manufacturing.

1 is a partially exploded perspective view of a light emitting device package 100 according to some embodiments of the present invention. 2 is a fragmentary assembled cross-sectional view of the light emitting device package 100 of FIG.

1 and 2, a light emitting device package 100 according to some embodiments of the present invention includes a light emitting device 10, a lead frame 20 and a light conversion sheet 30, . ≪ / RTI >

1 and 2, the light emitting device 10 has a first pad P1 and a second pad P2, and the lead frame 20, And may be a flip chip type LED (Light Emitting Diode) electrically connected to each other using the first bonding medium B1 and the second bonding medium B2.

In addition, although not shown, it may be in the form of a flip chip having a signal transmission medium such as a pump or a solder in addition to the pads P1 and P2. In addition, a bonding wire may be applied to the terminal, A light emitting element to which a bonding wire is applied to only a terminal, or a horizontal or vertical type light emitting element can be applied.

In addition, the first pad P1 and the second pad P2 may be deformed into various shapes other than the rectangular shape shown in FIG. 1, and may have a finger structure having a plurality of fingers on one arm, for example.

1 and 2, the light emitting device 10 may be provided on the lead frame 20, and a plurality of light emitting devices 10 may be mounted on the lead frame 20 .

In addition, although not shown, the light emitting device 10 may be a horizontal or vertical type light emitting device electrically connected to the lead frame 20 using a bonding wire.

 As shown in FIGS. 1 and 2, the light emitting device 10 may be formed of a semiconductor. For example, LEDs of blue, green, red, and yellow light emission, LEDs of ultraviolet light emission, and LEDs of infrared light emission, which are made of a nitride semiconductor, can be applied.

The light emitting device 10 may be formed by epitaxially growing nitride semiconductors such as InN, AlN, InGaN, AlGaN, and InGaAlN on a sapphire substrate for growth or a silicon carbide substrate by a vapor phase growth method such as MOCVD To grow. The light emitting element 10 may be formed using a semiconductor such as ZnO, ZnS, ZnSe, SiC, GaP, GaAlAs, or AlInGaP in addition to the nitride semiconductor. These semiconductors can be stacked in the order of an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer. The light emitting layer (active layer) may be a laminated semiconductor having a multiple quantum well structure or a single quantum well structure or a laminated semiconductor having a double hetero structure. Further, the light emitting element 10 can be selected to have an arbitrary wavelength depending on applications such as display use and illumination use.

Here, as the growth substrate, an insulating, conductive or semiconductor substrate may be used if necessary. For example, the growth substrate may be sapphire, SiC, Si, MgAl 2 O 4 , MgO, LiAlO 2 , LiGaO 2 , GaN. A GaN substrate, which is a homogeneous substrate, is preferable for epitaxial growth of a GaN material, but a GaN substrate has a problem of high production cost due to its difficulty in manufacturing.

Sapphire and silicon carbide (SiC) substrates are mainly used as the different substrates. Sapphire substrates are more utilized than expensive silicon carbide substrates. When using a heterogeneous substrate, defects such as dislocation are increased due to the difference in lattice constant between the substrate material and the thin film material. Also, due to the difference in the thermal expansion coefficient between the substrate material and the thin film material, warping occurs at a temperature change, and warping causes a crack in the thin film. This problem may be reduced by using a buffer layer between the substrate and the GaN-based light emitting laminate.

In addition, the substrate for growth may be completely or partially removed or patterned in order to improve the optical or electrical characteristics of the LED chip before or after the growth of the LED structure.

For example, in the case of a sapphire substrate, the substrate can be separated by irradiating the laser to the interface with the semiconductor layer through the substrate, and the silicon or silicon carbide substrate can be removed by a method such as polishing / etching.

Another supporting substrate may be used for removing the growth substrate. In order to improve the light efficiency of the LED chip on the opposite side of the growth substrate, the supporting substrate may be bonded using a reflective metal, As shown in FIG.

In addition, patterning of the growth substrate improves the light extraction efficiency by forming irregularities or slopes before or after the LED structure growth on the main surface (front surface or both sides) or side surfaces of the substrate. The size of the pattern can be selected from the range of 5 nm to 500 μm and it is possible to make a structure for improving the light extraction efficiency with a rule or an irregular pattern. Various shapes such as a shape, a column, a mountain, a hemisphere, and a polygon can be adopted.

In the case of the sapphire substrate, the crystals having a hexagonal-rhombo-cubic (Hexa-Rhombo R3c) symmetry have lattice constants of 13.001 and 4.758 in the c-axis direction and the a-axis direction, respectively, and have C plane, A plane and R plane. In this case, the C-plane is relatively easy to grow the nitride film, and is stable at high temperature, and thus is mainly used as a substrate for nitride growth.

Another material of the growth substrate is a Si substrate, which is more suitable for large-scale curing and relatively low in cost, so that mass productivity can be improved.

In addition, since the silicon (Si) substrate absorbs light generated from the GaN-based semiconductor and the external quantum efficiency of the light emitting device is lowered, the substrate may be removed as necessary, and Si, Ge, SiAl, A support substrate such as a metal substrate is further formed and used.

When a GaN thin film is grown on a different substrate such as the Si substrate, the dislocation density increases due to the lattice constant mismatch between the substrate material and the thin film material, and cracks and warpage Lt; / RTI > The buffer layer may be disposed between the growth substrate and the light emitting stack for the purpose of preventing dislocation and cracking of the light emitting stack. The buffer layer also functions to reduce the scattering of the wavelength of the wafer by adjusting the degree of warping of the substrate during the growth of the active layer.

The buffer layer may be made of GaN, AlN, AlGaN, InGaN, or InGaNAlN. If necessary, a material such as ZrB 2 , HfB 2 , ZrN, HfN, or TiN may be used. Further, a plurality of layers may be combined, or the composition may be gradually changed.

1 and 2, the lead frame 20 includes a first electrode 21 provided on one side of the electrode separation space, a second electrode 22 on the other side of the lead frame 20, And a seating surface 23 is formed to allow the light emitting device 10 to be mounted thereon.

More specifically, for example, as shown in Figs. 1 and 2, the lead frame 20 is made of a material having suitable mechanical strength and insulation property capable of supporting or accommodating the light emitting element 10, .

For example, the lead frame 20 may be formed of a metal material such as aluminum, copper, zinc, tin, lead, gold, or silver, and may be in the form of a perforated or bent plate.

In order to maximize the reflectance, at least a silver (Ag) plating layer, a silver (Ag) alloy, a silver (Ag) alloy layer, an aluminum (Al) (Al) alloy layer, a copper (Cu) alloy, a copper (Cu) alloy layer, a copper (Cu) alloy layer, a platinum (Pt) alloy, a platinum (Au), gold (Au) plated layer, gold (Au) alloy layer, palladium (Pd), ruthenium (Ru), rhodium (Rh) and combinations thereof.

In addition, a printed circuit board (PCB) in which an epoxy resin sheet is formed in multiple layers in place of the lead frame 20 can be applied. The lead frame 20 may be a Flexible Printed Circuit Board (FPCB) made of a flexible material.

In addition, instead of the lead frame 20, a synthetic resin substrate such as resin or glass epoxy or a ceramic substrate may be used in consideration of thermal conductivity.

In order to improve workability, the lead frame 20 may be made of at least one selected from at least one of EMC (Epoxy Mold Compound), PI (polyimide), ceramic, graphene, glass synthetic fiber and combinations thereof . ≪ / RTI >

1 and 2, the light-converting sheet 30 includes a first insulating adhesive layer 31-1 provided on the remaining part of the lead frame 20 except for the seating surface 23, And a first through hole portion (not shown) which is fixed to the lead frame 20 by press bonding by means of the first insulating adhesive layer 31-1 so as to secure a light path of light generated in the light emitting element 10 A first base layer 31-2 made of a metal and a first photoconversion material 31-3 filled in the first through hole H1 of the first base layer 31-2, . ≪ / RTI >

More specifically, for example, as shown in FIGS. 1 and 2, the first insulating adhesive layer 31-1 is provided on the remaining part of the lead frame 20 except for the seating surface 23 It may be an insulating adhesive material.

More specifically, the insulating adhesive material may be at least one selected from the group consisting of epoxy resin, acrylic resin, polyester resin, urethane resin, silicone resin, rubber, polyimide resin, polyisosimide, polyiso- Various thermoplastic or thermosetting curing agents such as an epoxy resin, an epoxy resin, an epoxy resin, a phenol resin, a polymer resin, a UV curing agent, and the like. In addition, all kinds of adhesives having insulation and heat resistance can be applied.

The first insulating adhesive layer 31-1 may be previously applied to the lower surface of the first base layer 31-2 or may be applied or dispensed on the upper surface of the lead frame 20. [

1 and 2, the first base layer 31-2 is fixed to the lead frame 20 by press bonding by the first insulation bonding layer 31-1 And a first through hole H1 is formed to secure a light path of the light emitted from the light emitting device 10. [

The first base layer 31-2 may be made of a metal material such as aluminum, copper, zinc, tin, lead, gold or silver. The first base layer 31-2 may be made of the same material as the lead frame 20, Lt; / RTI >

Therefore, since the first base layer 31-2 is formed in a flat shape, the first base layer 31-2 can be firmly pressed on the lead frame 20 under a uniform pressure with the largest area by the press.

Therefore, the first base layer 31-2 may serve as an intermediate medium for firmly fixing the photo-conversion material 31-3, which will be described later, to the lead frame 20.

Since the first base layer 31-2 is insulated from the metal material or the lead frame 20 by the insulating adhesive layer 31-1, the first base layer 31-2 is not electrically connected, It is possible to prevent generation of various kinds of noise, shot, and electromagnetic wave.

2, the first photo-conversion material 31-3 is formed on the first base layer 31-2 so that its thickness T2 can be controlled according to the thickness T1 of the first base layer 31-2. May be screen printed on the first through hole portion (H1) of the first base layer (31-2).

More specifically, the first photo-conversion material 31-3 is formed by selecting at least one of a light-transmitting encapsulant containing at least a fluorescent material, a quantum dot, a fluorescent material or a quantum dot, and combinations thereof, And the thickness T2 thereof may be smaller than at least the thickness T1 of the first base layer 31-2, and the shape thereof may be a flat plate shape in which at least the upper surface is balanced. 6, the thickness T4 of the first photo-conversion material 31-3 may be at least equal to the thickness T3 of the first base layer 31-2, have. At this time, the first photo-conversion material 31-3 may be squeezed-screen-printed on the first base layer 31-2.

Also, as shown in FIGS. 1 and 2, an air gap 51 may be formed between the light emitting device 10 and the first photo-conversion material 31-3.

In addition, although not shown, at least one of a light-transmitting encapsulant, a second photo-conversion material, a fluorescent material, a quantum dot, and combinations thereof may be selected between the light emitting element 10 and the first photo-conversion material 31-3 .

On the other hand, such a phosphor may have the following composition formula and color.

Oxide system: yellow and green Y 3 Al 5 O 12 : Ce, Tb 3 Al 5 O 12 : Ce, Lu 3 Al 5 O 12 : Ce

(Ba, Sr) 2 SiO 4 : Eu, yellow and orange (Ba, Sr) 3 SiO 5 : Ce

The nitride-based: the green β-SiAlON: Eu, yellow L 3 Si 6 O 11: Ce , orange-colored α-SiAlON: Eu, red CaAlSiN 3: Eu, Sr 2 Si 5 N 8: Eu, SrSiAl 4 N 7: Eu

The composition of the phosphor should basically correspond to stoichiometry, and each element may be substituted with another element in each group on the periodic table. For example, Sr can be substituted with Ba, Ca, Mg, etc. of the alkaline earth (II) group, and Y can be replaced with lanthanum series of Tb, Lu, Sc, Gd and the like. Ce, Tb, Pr, Er, Yb and the like, and the active agent may be used alone or as a negative active agent for the characteristic modification.

It is also possible to use a structure of a core (3 to 10 nm) such as Quantum Dot (QD) CdSe and InP and a shell (0.5 to 2 nm) such as ZnS and ZnSe and a ligand for stabilizing the core and shell And various colors can be implemented depending on the size.

In addition, the application method of the phosphor may be at least one of a method of being applied to an LED chip or a light emitting device, a method of covering the LED chip, a method of covering the LED chip, a method of attaching a sheet form such as a film or a ceramic phosphor.

Dispensing and spray coating are common methods of spraying, and dispensing includes mechanical methods such as pneumatic method and screw, linear type. It is also possible to control the amount of dyeing through a small amount of jetting by means of a jetting method and control the color coordinates thereof. The method of collectively applying the phosphor on the wafer level or the light emitting device substrate by the spray method can easily control productivity and thickness.

The method of directly covering the light emitting device or the LED chip in a film form can be applied by a method of electrophoresis, screen printing or phosphor molding, and the method can be different according to necessity of application of the side of the LED chip.

In order to control the efficiency of the long-wavelength light-emitting phosphor that reabsers light emitted from a short wavelength among two or more kinds of phosphors having different emission wavelengths, two or more kinds of phosphor layers having different emission wavelengths can be distinguished. A DBR (ODR) layer may be included between each layer to minimize absorption and interference.

In order to form a uniform coating film, the phosphor may be formed into a film or ceramic form and then attached onto the LED chip or the light emitting device.

In order to make a difference in light efficiency and light distribution characteristics, a photoelectric conversion material may be located in a remote format. In this case, the photoelectric conversion material is located together with a transparent polymer, glass, or the like depending on its durability and heat resistance.

Since the phosphor coating technique plays a major role in determining the optical characteristics in the light emitting device, control techniques such as the thickness of the phosphor coating layer and the uniform dispersion of the phosphor have been studied variously. The quantum dot (QD) can also be located in the LED chip or the light emitting element in the same manner as the phosphor, and can be positioned between the glass or the light-transmitting polymer material to perform light conversion.

1 and 2, a plurality of first through holes H1 formed in the first base layer 31-2 are formed by a screen printing method using the first photo-conversion material, such as a fluorescent material or a quantum dot, The first insulating adhesive layer 31-1 and the first insulating adhesive layer 31-1 are press-bonded together on the lead frame 20 to greatly reduce the processing time and the process cost, The first base layer 31-2 is not energized by the insulating adhesive layer 31-1, thereby preventing generation of various noises, shorts, and electromagnetic waves due to the insulating adhesive layer 31-1. The adhesive force between the components can be maximized and the first base layer 31-2 made of a metal can be used to maximize heat dissipation performance capable of releasing the heat of the first photo- .

More specifically, the first base layer 31-2 has excellent heat dissipation and is made of the same metal material as the lead frame 20, and the first photo-conversion material 31-3 has quantum dots May include.

The quantum dot is susceptible to temperature changes, and the first base layer 31-2 and the lead frame 20 can easily dissipate heat, thereby improving durability.

3 is a cross-sectional view illustrating a light emitting device package 200 according to some other embodiments of the present invention.

3, the first photo-conversion material 31-4 of the light emitting device package 200 according to some other embodiments is convex convex upward, and the first base layer 31-5 also has a convex shape, And may be convexly convex extending up to the same curvature as the first photo-conversion material 31-4. In addition, although not shown, the first photo-conversion material 31-4 and the first base layer 31-5 may be convex or concave or convex or concave up or down with various curvatures.

Therefore, the optical path can be guided in a wider direction as if using a lens, by using the first light conversion material 31-4 and the first base layer 31-5 which are convex upward.

4 is a cross-sectional view illustrating a light emitting device package 300 according to still another embodiment of the present invention.

As shown in FIG. 4, the first base layer 31-6 of the light emitting device package 300 according to still another embodiment of the present invention may be a downwardly bent type whose ends are bent downward. Accordingly, the end portion can be bent downward to secure a sufficient space for accommodating the light emitting element 10. The first base layer 31-6 may be manufactured by forging, as well as by bending or etching.

5 is a cross-sectional view illustrating a light emitting device package 400 according to still another embodiment of the present invention.

As shown in FIG. 5, the first base layer 31-7 of the light emitting device package 400 according to still another embodiment of the present invention may be an upwardly bent type whose ends are bent upward.

Therefore, the end portion is bent upwardly to widen the thermal contact area, thereby further improving the heat radiation performance. The first base layer 31-7 may be manufactured by forging, as well as by bending or etching.

6 is a cross-sectional view illustrating a light emitting device package 500 according to still another embodiment of the present invention.

6, the lead frame 20 of the light emitting device package 500 according to still another embodiment of the present invention includes a chip accommodating portion (not shown) for inserting at least a part of the light emitting device 10, 24 may be formed.

Therefore, it is possible to secure a sufficient space for accommodating the light emitting element 10 by using the chip accommodating portion 24. [ Here, the lead frame 20 can be formed with the chip accommodating portion 24 on its surface by punching, pressing, etching, or the like.

7 is a cross-sectional view illustrating a light emitting device package 600 according to still another embodiment of the present invention.

7, the light emitting device package 600 according to still another embodiment of the present invention is provided between the lead frame 20 and the first insulating adhesive layer 31-1, The second through holes H2 are formed by press bonding on the lead frame 20 by the second insulating adhesive layer 41-1 so as to secure a light path of the light generated in the light emitting element 10 And a second base layer 40 made of a metal material.

Therefore, the second base layer 40 can secure a sufficient space for accommodating the light emitting device 10 as a kind of spacer.

8 is a perspective view showing a light conversion sheet 30 according to some embodiments of the present invention.

8, the light conversion sheet 30 according to some embodiments of the present invention includes a first base layer 31-2, a first light conversion material 31-3, And an insulating bonding layer 31-1.

The first base layer 31-2 may be a metal structure having a first through hole H1 formed to secure a light path of light generated in the light emitting device 10. [

The first photoconversion material 31-3 may be a phosphor or a quantum dot filled in the first through hole H1 of the first base layer 31-2.

The first insulating layer 31-1 is formed of an insulating adhesive material so that the first base layer 31-2 can be bonded to the lead frame 20 of the light emitting device package 100 in an insulated state And an insulating adhesive material provided on the lead frame facing surface of the first base layer 31-2.

Figs. 8 to 12 are plan views showing various embodiments of the first through hole portion H1 of the light conversion sheet 30 of Fig.

8 to 12, the first through-hole portion H1 of the first base layer 31-2 is not limited to the square hole portion H1-1 of FIG. 8, A plurality of square hole portions H1-3 or a plurality of circular hole portions in Fig. 10, a radial pin type hole portion H1-4 in Fig. 11, a helical pin type hole portion H1-5 in Fig. 12, And combinations of these.

The first through hole portion H1 of the first base layer 31-2 may be formed by a process such as punching, pressing, etching, or the like using a polygonal or multi- The heat transfer area between the photo-conversion material 31-3 and the first base layer 31-2 can be increased by a printing method.

8, the light conversion sheet 30 according to some embodiments of the present invention may be integrally formed with the lead frame 20 as shown in FIGS. 1 and 2 , Finally cut into a first direction cutting line CL1 and a second direction cutting line CL2, and can be individualized. In addition, the light conversion sheet 30 according to some embodiments of the present invention is cut into the first direction cutting line CL1 and the second direction cutting line CL2 in advance, and then the lead frame 20).

The first base layer 31-2 and the first photo-conversion material 31-3 and the first insulating adhesive layer 31-1 of FIG. The configuration and role of the light emitting device packages 100, 200, 300, 400, and 500 according to some embodiments of the present invention may be the same as those of the light emitting device packages 100, 200, 300, 400, Therefore, detailed description is omitted.

FIGS. 13 to 16 are cross-sectional views illustrating steps of manufacturing the light emitting device package 100 according to some embodiments of the present invention.

As shown in FIGS. 13 to 16, the manufacturing process of the light emitting device package 100 according to some embodiments of the present invention will be described step by step. First, as shown in FIG. 13, A second electrode 22 is provided in the other direction and a lead frame 20 having a seating surface 23 for seating the light emitting device 10 Can be prepared.

14, a first bonding medium B1 and a second bonding medium B2 are coated or dispensed on the lead frame 20, (10) can be seated. At this time, you can reflow immediately, or reflow after all other processes are finished.

15, a first through hole H1 is formed in a first base layer 31-2 made of a metal so as to secure a light path of light generated in the light emitting device 10, The first photo-conversion material 31-3 is charged by screen printing or squeeze screen printing on the first through hole portion H1 of the first base layer 31-2 and the first base layer 31-2 A first insulating adhesive layer 31-1 made of an insulating adhesive material is provided on the lead frame facing surface of the first base layer 31-2 so as to be adhered to the lead frame 20 in an insulated state The light conversion sheet 30 can be prepared.

At this time, the thickness of the first photo-conversion material 31-3 can be controlled using the thickness of the first base layer 31-2, the printing environment, or the like during the screen printing or the squeeze screen printing.

16, the light conversion sheet 30 may be pressed by a press so that the light conversion sheet 30 is fixed to the lead frame 20. As shown in FIG.

At this time, the press can be generally applied to a hot press widely used in the PCB process.

The first photo-conversion material 31-3 such as a fluorescent material or a quantum dot is simply and collectively charged into a plurality of first through holes H1 formed in the first base layer 31-2 by a screen printing method, The first insulating adhesive layer 31-1 is used to press-bond the lead frame 20 on the lead frame 20, thereby greatly reducing the process time and process cost, simplifying the process, lowering the product cost, and improving the productivity .

17 is a cross-sectional view illustrating a backlight unit 1000 according to some embodiments of the present invention.

17, a backlight unit 1000 according to some embodiments of the present invention includes a light emitting device 10, a first electrode 21 provided in one direction with respect to an electrode separation space, A lead frame 20 provided with a second electrode 22 in the other direction and having a seating surface 23 for seating the light emitting device; A first insulating adhesive layer 31-1 provided on the remaining part of the lead frame 20 by press bonding on the lead frame 20 by the first insulating adhesive layer 31-1, A first base layer 31-2 made of a metal and having a first through hole H1 formed to secure a light path of light generated in the first base layer 31-2, A first light conversion material 31-3 that is filled in the light guide plate H1 and a light guide plate 110 that is installed in the light path of the light emitting device 10 .

Here, the light emitting device 10, the lead frame 20, the first insulating adhesive layer 31-1, the first base layer 31-2, and the first photo-conversion material 31- 3 are identical to those of the light emitting device packages 100, 200, 300, 400, 500 according to some embodiments of the present invention shown in FIGS. 1 to 16, can do. Therefore, detailed description is omitted.

The light guide plate 110 may be an optical member that can be made of a light-transmitting material to guide light generated from the light emitting device 10.

The light guide plate 110 may be installed in a path of light generated by the light emitting device 10 to transmit light generated by the light emitting device 10 in a wider area.

The light guide plate 110 may be made of polycarbonate, polysulfone, polyacrylate, polystyrene, polyvinyl chloride, polyvinyl alcohol, polynorbornene, polyester, or the like , And various light transmitting resin materials may be applied. In addition, the light guide plate 110 may be formed by various methods such as forming fine patterns, fine protrusions, diffusion films, or the like on the surface, or forming fine bubbles therein.

Although not shown, various diffusion sheets, prism sheets, filters, and the like may be additionally provided above the light guide plate 110. In addition, various display panels such as an LCD panel may be installed above the light guide plate 110. [

Although not shown, the present invention may include a lighting device or a display device including the light emitting device package 100 (200) 300, 400, 500, 600 described above. Here, the components of the illumination device or the display device according to some embodiments of the present invention may have the same configuration and function as those of the above-described light emitting device package of the present invention. Therefore, detailed description is omitted.

18 is a flowchart showing a method of manufacturing the light emitting device package 100 according to some embodiments of the present invention.

1 to 18, a method of manufacturing a light emitting device package 100 according to some embodiments of the present invention includes providing a first electrode 21 in one direction with respect to an electrode separation space, (S1) of preparing a lead frame (20) having a second electrode (22) on the other side and a seating surface (23) on which the light emitting device (10) (S2) of placing the light emitting device (10) on the seating surface (23) of the light emitting device (20) The first photoelectric conversion material 31-3 is screen-printed on the first through hole portion H1 of the first base layer 31-2 by screen printing, And the first base layer (31-2) is insulated from the lead frame (20) so that the first base layer (31-2) (S3) of providing a light conversion sheet (30) by providing an adhesion layer (31-1) on the lead frame facing surface of the first base layer (31-2) (S4) pressing the light conversion sheet (30) by a press to fix the light conversion sheet (30).

While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the invention. Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims.

10: Light emitting element
P1: first pad
P2: second pad
B1: First bonding medium
B2: Second bonding medium
20: Lead frame
21: first electrode
22: second electrode
23: seat face
24:
30: light conversion sheet
31-1: first insulating adhesive layer
31-2, 31-5, 31-6, 31-7: a first base layer
H1, H1-1, H1-2, H1-3, H1-4. H1-5: First through hole portion
31-3 and 31-4: a first photo-conversion material
T1, T2, T3, T4: Thickness
CL1: first direction cutting line
CL2: second direction cutting line
40: second base layer
41-1: second insulating adhesive layer
H2: second through hole portion
51: air gap
110: light guide plate
100, 200, 300, 400, 500, 600: Light emitting device package
1000: Backlight unit

Claims (9)

A light emitting element;
A lead frame having a first electrode on one side of the electrode separation space, a second electrode on the other side of the electrode assembly, and a seating surface for seating the light emitting device;
A first insulating adhesive layer provided on a remaining portion of the lead frame except for the seating surface;
A first base layer formed on the lead frame by press bonding by the first insulating adhesive layer and having a first through hole so as to secure a light path of light generated from the light emitting device; And
A first photo-conversion material filled in the first through hole portion of the first base layer;
Emitting device package. The method according to claim 1,
Wherein the first light conversion material is screen printed on the first through hole portion of the first base layer so that its thickness can be controlled according to the thickness of the first base layer. The method according to claim 1,
Wherein the first photoconversion material is selected from at least one of phosphors, quantum dots, translucent encapsulants, and combinations thereof, the thickness of which is at least equal to or less than the thickness of the first base layer, At least one of a flat plate type, a convex upward convex, a concave downward concave, and combinations thereof,
The first base layer may include at least one of a flat plate type, a convex convex shape, a concave concave shape, an upwardly bent upwardly bent type, a downwardly bent type bent at an end portion, and combinations thereof, And,
Wherein the first through hole portion of the first base layer is formed by selecting at least one of a square hole portion, a circular hole portion, a plurality of square hole portions, a plurality of circular hole portions, a radial fin type hole portion, a helical pin type hole portion, Lt; / RTI > package. The method according to claim 1,
Wherein the lead frame is formed with a chip accommodating portion so that at least a part of the light emitting element can be inserted. The method according to claim 1,
A second insulating adhesive layer provided between the lead frame and the first insulating adhesive layer and fixed by press bonding on the lead frame, A second base layer formed;
Emitting device package. The method according to claim 1,
Wherein the first base layer is made of the same metal material as the lead frame,
Wherein the first light conversion material comprises a quantum dot. A light emitting element;
A lead frame having a first electrode on one side of the electrode separation space, a second electrode on the other side of the electrode assembly, and a seating surface for seating the light emitting device;
A first insulating adhesive layer provided on a remaining portion of the lead frame except for the seating surface;
A first base layer formed on the lead frame by press bonding by the first insulating adhesive layer and having a first through hole so as to secure a light path of light generated from the light emitting device;
A first photo-conversion material filled in the first through hole portion of the first base layer; And
A light guide plate installed in an optical path of the light emitting element;
. ≪ / RTI > A first base layer in which a first through hole is formed to secure a light path of light generated in the light emitting device;
A first photo-conversion material filled in the first through hole portion of the first base layer; And
A first insulating adhesive layer made of an insulating adhesive material so that the first base layer can be adhered to the lead frame of the light emitting device package in an insulated state, the first insulating adhesive layer being disposed on the lead frame facing surface of the first base layer;
And the light-converting sheet. Preparing a lead frame in which a first electrode is provided on one side of the electrode separation space, a second electrode is provided on the other side, and a seating surface is formed so that the light emitting device can be seated;
Placing the light emitting device on the seating surface of the lead frame;
Forming a first through hole in the first base layer so as to secure a light path of the light generated in the light emitting device, screen printing and charging the first photo conversion material in the first through hole portion of the first base layer, Preparing a light conversion sheet by providing a first insulating adhesive layer made of an insulating adhesive material on the lead frame facing surface of the first base layer so that the first base layer can be adhered to the lead frame in an insulated state; And
Compressing the light conversion sheet with a press so that the light conversion sheet is fixed to the lead frame;
Emitting device package.
KR1020140078051A 2014-06-25 2014-06-25 Light emitting device package, backlight unit, light converting sheet and its manufacturing method KR101590472B1 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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JPH03186004A (en) * 1989-12-15 1991-08-14 Sumitomo Electric Ind Ltd Amplifying circuit
JP2009134965A (en) * 2007-11-29 2009-06-18 Stanley Electric Co Ltd Lighting device and manufacturing method of lighting device
KR20120029896A (en) * 2010-09-17 2012-03-27 주식회사 루멘스 Led package, illuminating unit and side emitting back light unit using the same

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JPH03186004A (en) * 1989-12-15 1991-08-14 Sumitomo Electric Ind Ltd Amplifying circuit
JP2009134965A (en) * 2007-11-29 2009-06-18 Stanley Electric Co Ltd Lighting device and manufacturing method of lighting device
KR20120029896A (en) * 2010-09-17 2012-03-27 주식회사 루멘스 Led package, illuminating unit and side emitting back light unit using the same

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180092895A (en) * 2017-02-09 2018-08-20 에이에스엠 테크놀러지 싱가포르 피티이 엘티디 Method for manufacturing a light emitting diode device and the light emitting diode device so manufactured

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