KR20150130557A - 조정 가능한 질량 분해 애퍼쳐 - Google Patents

조정 가능한 질량 분해 애퍼쳐 Download PDF

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Publication number
KR20150130557A
KR20150130557A KR1020157029879A KR20157029879A KR20150130557A KR 20150130557 A KR20150130557 A KR 20150130557A KR 1020157029879 A KR1020157029879 A KR 1020157029879A KR 20157029879 A KR20157029879 A KR 20157029879A KR 20150130557 A KR20150130557 A KR 20150130557A
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KR
South Korea
Prior art keywords
ion
ion beam
mra
ions
mass
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Withdrawn
Application number
KR1020157029879A
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English (en)
Korean (ko)
Inventor
글렌 이. 레인
Original Assignee
글렌 레인 패밀리 리미티드 리에빌러티 리미티드 파트너쉽
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Publication of KR20150130557A publication Critical patent/KR20150130557A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00—Particle spectrometers or separator tubes
    • H01J49/02—Details
    • H01J49/06—Electron- or ion-optical arrangements
    • H01J49/062—Ion guides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/0203—Protection arrangements
    • H01J2237/0213—Avoiding deleterious effects due to interactions between particles and tube elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H01J2237/0455—Diaphragms with variable aperture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/152—Magnetic means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00—Particle spectrometers or separator tubes
    • H01J49/26—Mass spectrometers or separator tubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
KR1020157029879A 2013-03-15 2014-03-17 조정 가능한 질량 분해 애퍼쳐 Withdrawn KR20150130557A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361800855P 2013-03-15 2013-03-15
US61/800,855 2013-03-15
PCT/US2014/030744 WO2014145898A2 (en) 2013-03-15 2014-03-17 Adjustable mass resolving aperture

Publications (1)

Publication Number Publication Date
KR20150130557A true KR20150130557A (ko) 2015-11-23

Family

ID=51521619

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020157029879A Withdrawn KR20150130557A (ko) 2013-03-15 2014-03-17 조정 가능한 질량 분해 애퍼쳐

Country Status (7)

Country Link
US (4) US9401260B2 (cg-RX-API-DMAC10.html)
EP (1) EP2973663B1 (cg-RX-API-DMAC10.html)
JP (1) JP6500009B2 (cg-RX-API-DMAC10.html)
KR (1) KR20150130557A (cg-RX-API-DMAC10.html)
CN (1) CN105247660B (cg-RX-API-DMAC10.html)
HK (1) HK1220287A1 (cg-RX-API-DMAC10.html)
WO (1) WO2014145898A2 (cg-RX-API-DMAC10.html)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019125597A1 (en) * 2017-12-21 2019-06-27 Varian Semiconductor Equipment Associates, Inc. Ion beam quality control using a movable mass resolving device
WO2021011415A1 (en) * 2019-07-12 2021-01-21 Leco Corporation Methods and systems for multi-pass encoded frequency pushing
US11574796B1 (en) 2021-07-21 2023-02-07 Applied Materials, Inc. Dual XY variable aperture in an ion implantation system
KR20240092530A (ko) * 2022-12-13 2024-06-24 주식회사 아바코 다중 이온 소스를 이용한 이온 주입 시스템

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TW201635326A (zh) * 2014-12-26 2016-10-01 艾克塞利斯科技公司 在具有射束減速的離子植入器中用於射束角度調整的系統及方法
US9685298B1 (en) * 2016-02-01 2017-06-20 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for contamination control in ion beam apparatus
US9953801B1 (en) 2016-11-29 2018-04-24 Axcelis Technologies, Inc. Two-axis variable width mass resolving aperture with fast acting shutter motion
JP6831245B2 (ja) * 2017-01-06 2021-02-17 住友重機械イオンテクノロジー株式会社 イオン注入方法およびイオン注入装置
US11469108B2 (en) 2018-08-31 2022-10-11 Taiwan Semiconductor Manufacturing Company, Ltd. System, semiconductor device and method
JP2020048607A (ja) * 2018-09-21 2020-04-02 株式会社日立製作所 粒子線治療システムおよびその拡張方法
JP7019544B2 (ja) * 2018-10-29 2022-02-15 三菱電機株式会社 イオン注入装置
US11189460B1 (en) * 2020-11-06 2021-11-30 Applied Materials, Inc. System, apparatus and method for variable length electrode in linear accelerator
JP7610260B2 (ja) * 2021-05-28 2025-01-08 株式会社ブイ・テクノロジー 集束イオンビーム装置
CN117941024A (zh) 2021-08-05 2024-04-26 艾克塞利斯科技公司 混合能量离子注入
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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019125597A1 (en) * 2017-12-21 2019-06-27 Varian Semiconductor Equipment Associates, Inc. Ion beam quality control using a movable mass resolving device
US11049691B2 (en) 2017-12-21 2021-06-29 Varian Semiconductor Equipment Associates, Inc. Ion beam quality control using a movable mass resolving device
WO2021011415A1 (en) * 2019-07-12 2021-01-21 Leco Corporation Methods and systems for multi-pass encoded frequency pushing
GB2599580A (en) * 2019-07-12 2022-04-06 Leco Corp Methods and systems for multi-pass encoded frequency pushing
US12100584B2 (en) 2019-07-12 2024-09-24 Leco Corporation Methods and systems for multi-pass encoded frequency pushing
GB2599580B (en) * 2019-07-12 2025-04-09 Leco Corp Methods and systems for multi-pass encoded frequency pushing
US11574796B1 (en) 2021-07-21 2023-02-07 Applied Materials, Inc. Dual XY variable aperture in an ion implantation system
KR20240092530A (ko) * 2022-12-13 2024-06-24 주식회사 아바코 다중 이온 소스를 이용한 이온 주입 시스템

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JP2016520951A (ja) 2016-07-14
US20160240349A1 (en) 2016-08-18
WO2014145898A3 (en) 2015-02-26
WO2014145898A2 (en) 2014-09-18
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