KR20150126772A - 성막 장치 및 배기 장치 및 배기 방법 - Google Patents

성막 장치 및 배기 장치 및 배기 방법 Download PDF

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Publication number
KR20150126772A
KR20150126772A KR1020150052204A KR20150052204A KR20150126772A KR 20150126772 A KR20150126772 A KR 20150126772A KR 1020150052204 A KR1020150052204 A KR 1020150052204A KR 20150052204 A KR20150052204 A KR 20150052204A KR 20150126772 A KR20150126772 A KR 20150126772A
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KR
South Korea
Prior art keywords
exhaust
gas
processing
exhaust path
supplying
Prior art date
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KR1020150052204A
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English (en)
Korean (ko)
Inventor
쇼헤이 센바
츠토무 사토요시
Original Assignee
도쿄엘렉트론가부시키가이샤
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Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20150126772A publication Critical patent/KR20150126772A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/3141—Deposition using atomic layer deposition techniques [ALD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020150052204A 2014-04-15 2015-04-14 성막 장치 및 배기 장치 및 배기 방법 KR20150126772A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014083674A JP6396670B2 (ja) 2014-04-15 2014-04-15 成膜装置ならびに排気装置および排気方法
JPJP-P-2014-083674 2014-04-15

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020170118443A Division KR20170108916A (ko) 2014-04-15 2017-09-15 성막 장치 및 배기 장치 및 배기 방법

Publications (1)

Publication Number Publication Date
KR20150126772A true KR20150126772A (ko) 2015-11-13

Family

ID=54446895

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020150052204A KR20150126772A (ko) 2014-04-15 2015-04-14 성막 장치 및 배기 장치 및 배기 방법
KR1020170118443A KR20170108916A (ko) 2014-04-15 2017-09-15 성막 장치 및 배기 장치 및 배기 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020170118443A KR20170108916A (ko) 2014-04-15 2017-09-15 성막 장치 및 배기 장치 및 배기 방법

Country Status (4)

Country Link
JP (1) JP6396670B2 (ja)
KR (2) KR20150126772A (ja)
CN (1) CN105039932B (ja)
TW (1) TWI647331B (ja)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105506581B (zh) * 2015-12-15 2019-03-19 北京北方华创微电子装备有限公司 一种应用原子层沉积技术制备薄膜的实现方法
CN105697332B (zh) * 2016-03-31 2017-10-03 成都西沃克真空科技有限公司 一种真空排气台
JP6723116B2 (ja) * 2016-08-31 2020-07-15 株式会社日本製鋼所 原子層成長装置および原子層成長方法
JP6851173B2 (ja) * 2016-10-21 2021-03-31 東京エレクトロン株式会社 成膜装置および成膜方法
TWI608119B (zh) * 2016-11-16 2017-12-11 矽碁科技股份有限公司 原子層沉積設備及其抽氣速率控制方法
JP6902991B2 (ja) 2017-12-19 2021-07-14 株式会社日立ハイテク プラズマ処理装置
US11918712B2 (en) 2018-06-20 2024-03-05 Jgc Japan Corporation Bacteria treatment mechanism and bacteria treatment method
KR20210053351A (ko) 2018-09-28 2021-05-11 램 리써치 코포레이션 증착 부산물 빌드업 (buildup) 으로부터 진공 펌프 보호
JP7116248B2 (ja) 2020-04-03 2022-08-09 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04103767A (ja) * 1990-08-22 1992-04-06 Nec Corp 低圧化学気相成長装置
KR100437532B1 (ko) * 2001-09-05 2004-06-30 동부전자 주식회사 반도체 제조장비의 배기 구조
JP3891848B2 (ja) * 2002-01-17 2007-03-14 東京エレクトロン株式会社 処理装置および処理方法
KR100498467B1 (ko) * 2002-12-05 2005-07-01 삼성전자주식회사 배기 경로에서의 파우더 생성을 방지할 수 있는 원자층증착 장비
JP4242733B2 (ja) * 2003-08-15 2009-03-25 株式会社日立国際電気 半導体装置の製造方法
JP2005223144A (ja) * 2004-02-05 2005-08-18 Hitachi Kokusai Electric Inc 基板処理装置
KR20060102447A (ko) * 2005-03-23 2006-09-27 삼성전자주식회사 반도체 제조설비의 배기장치
EP2601413B1 (en) * 2010-08-05 2019-01-16 Ebara Corporation Exhaust system

Also Published As

Publication number Publication date
TW201608050A (zh) 2016-03-01
CN105039932B (zh) 2018-08-31
JP6396670B2 (ja) 2018-09-26
JP2015203145A (ja) 2015-11-16
KR20170108916A (ko) 2017-09-27
TWI647331B (zh) 2019-01-11
CN105039932A (zh) 2015-11-11

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