KR20150069548A - 반도체 적층 구조체들을 형성하는 방법들 및 시스템들 - Google Patents

반도체 적층 구조체들을 형성하는 방법들 및 시스템들 Download PDF

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Publication number
KR20150069548A
KR20150069548A KR1020140179232A KR20140179232A KR20150069548A KR 20150069548 A KR20150069548 A KR 20150069548A KR 1020140179232 A KR1020140179232 A KR 1020140179232A KR 20140179232 A KR20140179232 A KR 20140179232A KR 20150069548 A KR20150069548 A KR 20150069548A
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South Korea
Prior art keywords
component
semiconductor
segmental
direct
direct bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
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KR1020140179232A
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English (en)
Korean (ko)
Inventor
존 에프. 스텀프
Original Assignee
램 리써치 코포레이션
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Publication of KR20150069548A publication Critical patent/KR20150069548A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W95/00—Packaging processes not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7602—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a robot blade or gripped by a gripper for conveyance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7614—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Laser Beam Processing (AREA)
KR1020140179232A 2013-12-13 2014-12-12 반도체 적층 구조체들을 형성하는 방법들 및 시스템들 Withdrawn KR20150069548A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/105,566 US9070745B1 (en) 2013-12-13 2013-12-13 Methods and systems for forming semiconductor laminate structures
US14/105,566 2013-12-13

Publications (1)

Publication Number Publication Date
KR20150069548A true KR20150069548A (ko) 2015-06-23

Family

ID=53369386

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020140179232A Withdrawn KR20150069548A (ko) 2013-12-13 2014-12-12 반도체 적층 구조체들을 형성하는 방법들 및 시스템들

Country Status (6)

Country Link
US (1) US9070745B1 (https=)
JP (1) JP6465633B2 (https=)
KR (1) KR20150069548A (https=)
CN (1) CN104716021B (https=)
SG (1) SG10201407521YA (https=)
TW (1) TWI657479B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9937589B2 (en) * 2015-03-27 2018-04-10 Advanced Research For Manufacturing Systems, Llc Object manufacturing from a work piece made of separate components
WO2020082232A1 (en) * 2018-10-23 2020-04-30 Yangtze Memory Technologies Co., Ltd. Semiconductor device flipping apparatus
US10903050B2 (en) 2018-12-10 2021-01-26 Lam Research Corporation Endpoint sensor based control including adjustment of an edge ring parameter for each substrate processed to maintain etch rate uniformity
CN114043074B (zh) * 2021-11-25 2024-05-03 哈尔滨工业大学 一种具有柔性加工能力的小型水导激光加工系统及方法
CN114346474B (zh) * 2022-01-17 2023-05-16 博捷芯(深圳)半导体有限公司 一种全自动激光晶圆切割装置及切割方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020115263A1 (en) * 2001-02-16 2002-08-22 Worth Thomas Michael Method and related apparatus of processing a substrate
JP2003257807A (ja) * 2002-03-07 2003-09-12 Shin Etsu Chem Co Ltd シリコン加工品の製造方法およびシリコン加工品
US6822326B2 (en) * 2002-09-25 2004-11-23 Ziptronix Wafer bonding hermetic encapsulation
JP4128843B2 (ja) * 2002-10-16 2008-07-30 古河電気工業株式会社 半導体チップ製造方法
JP4417028B2 (ja) * 2003-05-22 2010-02-17 株式会社タカトリ ダイシングフレームへのダイシングテープの貼り付け装置
EP2269826A3 (en) * 2003-10-10 2012-09-26 Dimatix, Inc. Print head with thin menbrane
JP2006332378A (ja) * 2005-05-26 2006-12-07 Sharp Corp 物品の位置決め方法および位置決め装置、並びに半導体装置の製造方法および半導体装置の製造装置
EP1894662A2 (en) * 2006-08-29 2008-03-05 Nitto Denko Corporation Adhesive sheet for water jet laser dicing
JP2008153349A (ja) * 2006-12-15 2008-07-03 Disco Abrasive Syst Ltd ウェーハの分割方法
JP2010519763A (ja) * 2007-02-22 2010-06-03 ハナ シリコン アイエヌシー プラズマ処理装置用シリコン素材の製造方法
JP2009212173A (ja) * 2008-03-03 2009-09-17 Csun Mfg Ltd ウエハフィルム裁断装置
JP2011088799A (ja) * 2009-10-26 2011-05-06 Mitsubishi Electric Corp 半導体装置の製造方法およびレーザー加工装置
FR2954585B1 (fr) * 2009-12-23 2012-03-02 Soitec Silicon Insulator Technologies Procede de realisation d'une heterostructure avec minimisation de contrainte
JP5578911B2 (ja) * 2010-03-31 2014-08-27 古河電気工業株式会社 ウエハ加工用テープ
CN102373017A (zh) * 2010-08-19 2012-03-14 古河电气工业株式会社 晶片加工用胶带
JP5952550B2 (ja) * 2011-11-28 2016-07-13 株式会社半導体エネルギー研究所 貼り合わせ装置

Also Published As

Publication number Publication date
JP2015122490A (ja) 2015-07-02
TWI657479B (zh) 2019-04-21
US9070745B1 (en) 2015-06-30
CN104716021A (zh) 2015-06-17
CN104716021B (zh) 2019-04-09
SG10201407521YA (en) 2015-07-30
TW201543535A (zh) 2015-11-16
US20150170958A1 (en) 2015-06-18
JP6465633B2 (ja) 2019-02-06

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St.27 status event code: A-0-1-A10-A12-nap-PA0109

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P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

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St.27 status event code: N-1-6-B10-B12-nap-PC1203

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St.27 status event code: A-2-2-P10-P22-nap-X000