KR20150067226A - 감광성 수지 조성물, 경화막의 제조 방법, 경화막, 유기 el 표시 장치 및 액정 표시 장치 - Google Patents
감광성 수지 조성물, 경화막의 제조 방법, 경화막, 유기 el 표시 장치 및 액정 표시 장치 Download PDFInfo
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- KR20150067226A KR20150067226A KR1020157011025A KR20157011025A KR20150067226A KR 20150067226 A KR20150067226 A KR 20150067226A KR 1020157011025 A KR1020157011025 A KR 1020157011025A KR 20157011025 A KR20157011025 A KR 20157011025A KR 20150067226 A KR20150067226 A KR 20150067226A
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- 0 C**C1C(C(*)=*OS(*)(=O)=O)=C(C=C(C)C=C2)C2=CC11CC1 Chemical compound C**C1C(C(*)=*OS(*)(=O)=O)=C(C=C(C)C=C2)C2=CC11CC1 0.000 description 4
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
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- H01L27/32—
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- H01L51/50—
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
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- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Medicinal Chemistry (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Materials For Photolithography (AREA)
- Electroluminescent Light Sources (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Liquid Crystal (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2012-255325 | 2012-11-21 | ||
JP2012255325 | 2012-11-21 | ||
PCT/JP2013/080860 WO2014080838A1 (ja) | 2012-11-21 | 2013-11-15 | 感光性樹脂組成物、硬化膜の製造方法、硬化膜、有機el表示装置および液晶表示装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20150067226A true KR20150067226A (ko) | 2015-06-17 |
Family
ID=50776021
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020157011025A KR20150067226A (ko) | 2012-11-21 | 2013-11-15 | 감광성 수지 조성물, 경화막의 제조 방법, 경화막, 유기 el 표시 장치 및 액정 표시 장치 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6038951B2 (ja) |
KR (1) | KR20150067226A (ja) |
TW (1) | TWI589990B (ja) |
WO (1) | WO2014080838A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6492444B2 (ja) * | 2013-09-04 | 2019-04-03 | Jsr株式会社 | 感放射線性樹脂組成物、硬化膜、その形成方法、及び電子デバイス |
JP6397697B2 (ja) * | 2014-08-27 | 2018-09-26 | 東京応化工業株式会社 | 層間絶縁膜形成用感光性樹脂組成物、層間絶縁膜及び層間絶縁膜の形成方法 |
JP6782102B2 (ja) * | 2015-06-26 | 2020-11-11 | 住友化学株式会社 | レジスト組成物 |
KR102139060B1 (ko) * | 2015-09-30 | 2020-07-29 | 후지필름 가부시키가이샤 | 레지스트 조성물과, 이를 이용한 레지스트막, 패턴 형성 방법 및 전자 디바이스의 제조 방법 |
CN113166294B (zh) | 2018-11-26 | 2024-01-12 | 中央硝子株式会社 | 光敏性树脂组合物、含氟树脂固化物的制备方法、含氟树脂、含氟树脂膜、隔堤及显示元件 |
WO2021246449A1 (ja) * | 2020-06-03 | 2021-12-09 | 昭和電工株式会社 | ポジ型感光性樹脂組成物、及び有機el素子隔壁 |
CN114276239B (zh) * | 2021-12-29 | 2023-10-27 | 徐州博康信息化学品有限公司 | 一种含缩酮结构酸敏感光刻胶树脂单体的制备方法 |
CN115974659A (zh) * | 2022-12-29 | 2023-04-18 | 徐州博康信息化学品有限公司 | 一种1-(1-乙氧基乙氧基)-4-乙烯基苯的合成方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2841161B2 (ja) * | 1994-01-27 | 1998-12-24 | 株式会社巴川製紙所 | パターン形成用感光性樹脂組成物およびパターン形成方法 |
JP2000267284A (ja) * | 1999-03-19 | 2000-09-29 | Sumitomo Durez Co Ltd | フォトレジスト用樹脂 |
CN102792227B (zh) * | 2010-03-11 | 2014-11-12 | 富士胶片株式会社 | 正型感光性树脂组合物、固化膜的形成方法、固化膜、液晶显示装置、以及有机el显示装置 |
JP4844695B2 (ja) * | 2010-04-28 | 2011-12-28 | Jsr株式会社 | 吐出ノズル式塗布法用ポジ型感放射線性組成物、表示素子用層間絶縁膜及びその形成方法 |
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2013
- 2013-11-15 WO PCT/JP2013/080860 patent/WO2014080838A1/ja active Application Filing
- 2013-11-15 KR KR1020157011025A patent/KR20150067226A/ko active Search and Examination
- 2013-11-15 JP JP2014548541A patent/JP6038951B2/ja not_active Expired - Fee Related
- 2013-11-20 TW TW102142152A patent/TWI589990B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP6038951B2 (ja) | 2016-12-07 |
JPWO2014080838A1 (ja) | 2017-01-05 |
WO2014080838A1 (ja) | 2014-05-30 |
TWI589990B (zh) | 2017-07-01 |
TW201421155A (zh) | 2014-06-01 |
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