KR20150062179A - Light emitting diode having enlarged reflecting layer - Google Patents

Light emitting diode having enlarged reflecting layer Download PDF

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Publication number
KR20150062179A
KR20150062179A KR1020130145803A KR20130145803A KR20150062179A KR 20150062179 A KR20150062179 A KR 20150062179A KR 1020130145803 A KR1020130145803 A KR 1020130145803A KR 20130145803 A KR20130145803 A KR 20130145803A KR 20150062179 A KR20150062179 A KR 20150062179A
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South Korea
Prior art keywords
layer
reflective layer
light emitting
reflective
emitting diode
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KR1020130145803A
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Korean (ko)
Inventor
남기연
이용석
최원진
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일진엘이디(주)
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Priority to KR1020130145803A priority Critical patent/KR20150062179A/en
Publication of KR20150062179A publication Critical patent/KR20150062179A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

Suggested is a light emitting diode with an extended reflection layer capable of improving light efficiency by forming the reflection layer on the whole surface of the diode without discontinuity. The diode includes a light emitting structure which includes a first semiconductor layer, an active layer and a second semiconductor layer, a second reflection layer which is located on the first semiconductor layer, and a first reflection layer which is located on the second semiconductor layer. The whole surface of the light emitting structure is covered without the discontinuity by the combination of the first reflection layer and the second reflection layer.

Description

[0001] The present invention relates to a light emitting diode having an extended reflective layer,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting diode. More particularly, the present invention relates to a light emitting diode that increases a light efficiency by extending a reflective layer to an entire area of a diode.

Light emitting diodes (LEDs) are elements that convert electrical energy into light, and light is generated in at least one active layer between layers doped with impurities, which are generally of opposite polarity. That is, when a bias is applied to both sides of the active layer, holes and electrons are injected into the active layer and recombined to generate light. On both sides of the active layer, an n-type semiconductor layer and a p-type semiconductor layer are positioned to form a light emitting structure. A reflective layer is provided on one side of the light emitting structure to change the direction in which the light emitted from the active layer exits. On the other hand, a metal material having a high reflectivity of about 90% or more in a visible light region is mainly used as the reflective layer.

On the other hand, efforts have been made to increase the light efficiency by extending the reflective layer in the light emitting diode. However, since the reflective layer functions as a conductive layer and reflects output light, it is difficult to design a reflective layer to extend over the entire surface of the diode. Accordingly, a light emitting diode in which a reflective layer exists in front of a diode is not yet realized. When the area of the reflective layer is small, the reflected output light is relatively inadequate to improve the light efficiency as compared with the case where the reflective layer exists on the front surface. Accordingly, a light emitting diode having a reflective layer extended over the entire surface of the diode is required. Meanwhile, Korean Laid-Open Patent Publication No. 2013-0024852 discloses a structure in which a reflective layer is extended, but there is no discontinuity in the extended reflective layer, so that light efficiency can not be effectively improved.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a light emitting diode having an extended reflection layer that improves light efficiency by allowing a reflection layer to exist on the front surface of a diode without discontinuity.

A light emitting diode having a reflective layer for solving the problems of the present invention includes a light emitting structure including a first semiconductor layer, an active layer, a second semiconductor layer, a second reflective layer positioned on the first semiconductor layer, And a second reflective layer disposed on the second reflective layer. At this time, the front surface of the light emitting structure is covered without discontinuity by the combination of the first reflective layer and the second reflective layer.

In the diode of the present invention, the first reflective layer may be electrically connected to the second semiconductor layer, and the second reflective layer may be electrically connected to the first semiconductor layer. The light emitting structure may include a mesa region in which the first semiconductor layer and the active layer are etched, the first reflective layer may extend to the mesa region, and the second reflective layer may extend to the top of the second semiconductor layer. The first insulating layer may further include a first insulating layer having a first contact hole formed therein for electrically connecting the first reflective layer and the second semiconductor layer. The first reflective layer may be formed on the first contact hole and the first insulating layer As shown in FIG. The second reflective layer may extend to have the same profile as the mesa region.

The first barrier layer and the second barrier layer are formed on the first reflective layer except for the region where the first barrier layer is formed; A first bonding pad disposed on the second insulating layer, a second barrier layer positioned on the second reflective layer, and a second bonding pad disposed on the second barrier layer. The first reflective layer and the second reflective layer may be insulated by a second insulating layer. The second reflective layer may be directly connected to the second barrier layer and the second bonding pad. Further, a pattern or protrusions can be formed on at least one of the surface of the first insulating layer constituting the layer with the first reflective layer and the surface of the second insulating layer constituting the layer with the second reflective layer.

According to the light emitting diode having the reflective layer of the present invention, by arranging the pair of reflective layers so as to cover the entire surface of the diode, the light efficiency can be improved by making the reflective layer exist on the front surface of the diode without discontinuity. In addition, since the light generated in the active layer is completely reflected by the reflective layer, the light can be utilized to the maximum without unnecessarily consuming the light.

1 is a perspective view illustrating a first light emitting diode having an extended reflective layer according to the present invention.
2 is a cross-sectional view taken along line II-II in FIG.
3 is a graph showing an increase rate (%) of an optical output PO according to a percent area increase (%) of a reflection layer of a flip-type light emitting diode having an extended reflection layer according to the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments described below can be modified into various other forms, and the scope of the present invention is not limited to the embodiments described below. The embodiments of the present invention are provided to enable those skilled in the art to more fully understand the present invention. The above and below referred to in this embodiment include everything formed directly or through another layer. In addition, the above or below standards will be described with reference to the drawings.

Embodiments of the present invention propose a light emitting diode having an extended reflective layer that improves light efficiency by arranging a pair of reflective layers to cover the entire surface of the diode so that the reflective layer is present at the front of the diode without discontinuity. To this end, a light emitting diode structure in which a pair of reflective layers are disposed on the front surface of a diode will be described in detail, and the effect of improving the light efficiency will be described in detail. Here, the front means that the pair of reflection layers exist on the front surface of the diode without discontinuity when viewed from the bonding pad or the substrate.

FIG. 1 is a perspective view showing a light emitting diode having an extended reflection layer according to an embodiment of the present invention, and FIG. 2 is a sectional view taken along a line II-II in FIG. Here, although the light emitting diode is shown as a flip type, it may be applied to other types of diodes within the scope of the present invention.

1 and 2, the light emitting diode of the present invention includes a substrate 10 and a first semiconductor layer 12, an active layer 14, and a second semiconductor layer 16 located on one side of the substrate 10 And a light emitting structure 15. Optionally, the first semiconductor layer 12 may be mesa etched and exposed for a portion that is subsequently supplied with current. The first reflective layer 24 is connected to the second semiconductor layer 16 and the second reflective layer 30 is connected to the first semiconductor layer 12. The first reflective layer 24 and the second semiconductor layer 16 are connected to each other by a first reflective layer 24 extending to the first contact hole 22 of the first insulating layer 20 and a second semiconductor layer 16 . That is, the first reflective layer 24 is isolated from the light emitting structure 15 by the first insulating film 20 except for the first contact hole 22. The connection between the second reflective layer 30 and the first semiconductor layer 12 is formed by the first semiconductor layer 12 defined by the first and second insulating films 20 and 26 and exposed. At this time, the first reflective layer 24 and the second reflective layer 30 are insulated by the second insulating layer 26.

The first reflective layer 24 is powered by a first bonding pad 38a through a first barrier layer 36a located in the second contact hole 28 and the second reflective layer 30 is electrically connected to the fourth contact And is supplied with power by the second bonding pad 38b passing through the second barrier layer 36b located in the hole 40. [ That is, a first insulating layer 20, a first reflective layer 24, a second insulating layer 26, and a second insulating layer 24 are formed on the second semiconductor layer 16 except for the regions of the first through third contact holes 22, The second reflective layer 30 and the third insulating film 32 are sequentially placed. The first insulating layer 20, the first reflective layer 24, the second insulating layer 26, the second reflective layer 30, and the second insulating layer 30 are formed on the first semiconductor layer 12 except for the region of the fourth contact hole 40. [ 3 insulating films 32 may be sequentially stacked or the second reflective layer 30 and the third insulating film 32 may be stacked.

The first reflective layer 24, the first barrier layer 36a and the first bonding pad 38a are sequentially stacked in the first to third contact holes 22, 28 and 34 and the fourth contact hole 40 The second reflective layer 30, the second barrier layer 36b, and the second bonding pad 38b form a layer sequentially. It is preferable that the fourth contact hole 40 of the present invention is formed where the third insulating film 32 extends. The light emitting diode structure is merely a preferred example of the present invention, and can be variously modified within the scope of the present invention. For example, in a light emitting diode having no mesa structure as shown in the drawings, the shape of each layer may be differently implemented.

The first reflective layer 24 is disposed between the first insulating layer 20 and the second insulating layer 26 and the second reflective layer 30 is disposed between the second insulating layer 26 and the third insulating layer 32, 24 and the third insulating film 32 are interposed. It is preferable that the first reflective layer 24 is exposed to the outside of the light emitting diode in the direction of the second semiconductor layer 16 and the other side is in contact with the region of the first semiconductor layer 12. Here, touching means that it is partially located above it. Accordingly, the first reflective layer 24 and the second reflective layer 30 may overlap each other with the second insulating layer 26 therebetween. It is preferable that the overlapping region is as large as possible. However, it is preferable that the overlapping region be appropriately determined in consideration of the size and shape of the light emitting diode, process convenience, and the like within a range satisfying the condition that the reflective layer 24, 30 covers the entire surface of the diode without discontinuity have. The second reflective layer 30 according to the embodiment of the present invention is exposed to the outside of the light emitting diode in the direction of the first semiconductor layer 12 and the other side is exposed to the outside of the second semiconductor layer 16, Region so as to have the same profile.

The first and second reflective layers 24 and 30 may function to reflect output light in addition to function as a conductive layer. With this structure, the light efficiency of the light emitting diode of the present invention can be increased and the reliability can be improved. A portion of the first reflective layer 24 to be inserted into the first contact hole 22 is connected to the second semiconductor layer 16 and is generated in the active layer 14 while supplying power to the second semiconductor layer 16. [ Reflects light. The second reflective layer 30 is connected to the first semiconductor layer 12 to supply power to the first semiconductor layer 12, and reflects light that is not reflected by the first reflective layer among light generated from the active layer. Although not shown, a transparent conductive layer may be interposed between the first reflective layer 24 and the second semiconductor layer 16, between the second reflective layer 30 and the first semiconductor layer 12 to form a reflective layer (not shown) 24, and 30 can be prevented from diffusing.

At least one of the surface of the first insulating layer 20 forming the layer with the first reflective layer 24 or the surface of the second insulating layer 26 forming the layer and the second reflective layer 30 may be patterned to assist light scattering Or irregularities can be further formed. Although the second insulating layer 32 and the second bonding layer 38b are separated from the second reflective layer 30 by the third insulating layer 32, The second reflective layer 30 can be directly connected to the second barrier layer 36b and the second bonding pad 38b. As such, when the second reflective layer 30 is directly electrically connected to the second barrier layer 36b and the second bonding pad 38b, the conductive function of the second reflective layer 30 can be improved.

According to the light emitting diode according to the embodiment of the present invention, the combination of the first and second reflective layers 24 and 30 completely covers the second semiconductor layer 16 and the first semiconductor layer 12, respectively. The combination of the first and second reflective layers 24 and 30 means that the first and second reflective layers 24 and 30 can serve as one reflective layer when viewed from the substrate 10. In addition, the meaning of completely covering means that the combination of the first and second reflective layers 24 and 30 covers the entire surface of the diode without being broken by a structural factor such as a contact hole as described above. Accordingly, since light generated in the active layer 14 is completely reflected by the first and second reflective layers 24 and 30, the light can be utilized without unnecessarily consuming light. As described above, when the reflective layer covers the entire surface of the diode without discontinuity, the optical output PO becomes large, so that the light efficiency becomes high.

The substrate 10 may be formed of a material such as sapphire (Al 2 O 3 ), silicon carbide (SiC), gallium nitride (GaN), gallium arsenide (GaAs), silicon (Si), germanium (Ge), zinc oxide (ZnO), magnesium oxide MgO), aluminum nitride (AlN), boron nitride (BN), gallium phosphide (GaP), indium phosphide (InP), and lithium-aluminum oxide (LiAl 2 O 3 ). The light emitting structure 15 may have any one of an np junction structure, a pn junction structure, an npn junction structure, and a pnp junction structure with respect to the substrate 10 as a plurality of conductive semiconductor layers. For example, in the case of the np junction structure, the first semiconductor layer 12 is an n-type semiconductor layer and the second semiconductor layer 16 is a p-type semiconductor layer

The first and second semiconductor layers 12 and 16 may include different impurities to have different conductivity types. For example, the first semiconductor layer 12 may comprise n-type impurities and the second semiconductor layer 16 may comprise p-type impurities. In the case where the light emitting structure 15 is an np junction structure, the first semiconductor layer 12 is formed of n-type Al x In y Ga z N (0? X, y, z? 1, x + y + z = 1), n-type GaN, or the like. At this time, the n-type impurity may be at least one selected from the group consisting of Si, Ge, Sn, Se and Te. The second semiconductor layer 16 may be a p-type Al x In y Ga z N (0? X, y, z? 1, x + y + z = 1) doped with a p-type impurity, have. The p-type impurity may be at least one selected from Mg, Zn, Ca, Sr, Be, and Ba.

Since the active layer 14 has a lower energy band gap than the first and second semiconductor layers 12 and 16, the active layer 14 can activate light emission. The active layer 14 may emit light of various wavelengths and may emit, for example, infrared light, visible light, or ultraviolet light. The active layer 14 may include a Group III-V compound material and may include Al x In y Ga z N (0? X, y, z? 1, x + y + z = 1), InGaN or AlGaN can do. In addition, the active layer 14 may be a single quantum well (SQW) or a multi quantum well (MQW). Further, the active layer 14 may have a laminated structure of a quantum well layer and a quantum barrier layer, and the number of the quantum well layer and the quantum barrier layer may be variously changed as needed. The active layer 14 may have a GaN / InGaN / GaN MQW structure or a GaN / AlGaN / GaN MQW structure, for example. However, this is illustrative, and the active layer 14 has different wavelengths of emitted light depending on the constituent materials.

The first and second reflective layers 24 and 30 may function to reflect output light in addition to their functions as a conductive layer. The first and second reflective layers 24 and 30 may be at least one layer selected from the group consisting of Al, Cu, Au, Pt, Pd, Rh, Ni, W, Mo, Cr and Ti or a composite layer thereof. Suitably, it is made of either Ag or Al, or an Ag alloy or an Al alloy. The first and second barrier layers 36a and 36b are formed by melting the first and second bonding pads 38a and 38b and the first and second reflective layers 24 and 30 at the interface, The reflectance and the contact resistance) can be prevented. The material of the barrier layer 36 may be, for example, Ti, a TiW alloy, W, Pt, Ni, or a combination thereof. The first and third insulating films 20, 26, and 32 may be an oxide or nitride such as silicon oxide, silicon nitride, silicon oxynitride, or the like, or a multilayer film in which the oxide or nitride is stacked. The bonding pad 38 may be formed of a conductive material such as Au, Ag, Al, Pd, Ti, Cr, Ni, Sn, Cr, Pt, W, Co, Ir, Rh, Ru, Zn, Mg, Alloys. The bonding pads 38 may be composed of a single layer or may be composed of multiple layers and may be composed of multiple layers such as Ti / Al, Cr / Au, Ti / Au, Au / Sn.

3 is a graph showing an increase rate (%) of an optical output PO according to a percent area increase (%) of a reflection layer of a flip-type light emitting diode having an extended reflection layer according to an embodiment of the present invention.

In this case, 0% of the reflective layer refers to a case where the reflective layer is 92.2% in the whole chip area, and 7.8% refers to the case where the reflective layer covers the entire surface of the diode (100%) as in the embodiment of the present invention. Further, the current injected into the light emitting diode was 350 mA. Ag is used as the material of the reflective layer. To increase the area, a PR pattern is formed on the insulating layer to form the first reflective layer 24, and Ag is deposited using a deposition equipment (E-beam or sputter). Thereafter, a lift-off process is performed to form the first reflective layer 24. The process of forming the second reflective layer 30 again and then forming the first reflective layer 24 may be repeated to form the second reflective layer 30 so that the N-type GaN and the P- A reflection layer can be formed on the entire chip area while preventing and preventing a short circuit.

According to FIG. 3, as the area of the reflective layer increases, the optical output (PO) also increases. The optical output (PO) was 483.53 mW, 498.18 mA, 504.78 mW, 511.27 mW and 517.50 mW, respectively, as the area increase rates of the reflective layer increased to 0%, 3.2%, 5.0%, 6.4% and 7.8%. As a result, the optical power (PO) increase rates were 3.0%, 4.4%, 5.7%, and 7.0%, respectively, when the area increase rates of the reflective layers were 3.2%, 5.0%, 6.4%, and 7.8%. In particular, when the reflective layer covers the entire surface of the diode as in the embodiment of the present invention, the optical output (PO) is improved to 7.0%. Therefore, when the reflective layer is present on the front surface of the light emitting diode without discontinuity as in the embodiment of the present invention, the light efficiency can be remarkably increased.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but many variations and modifications may be made without departing from the spirit and scope of the invention. It is possible.

10; A substrate 12; The first semiconductor layer
14; Active layer 15; The light-
16; The second semiconductor layer
20, 26, 32; The first to third insulating films
24; A first reflective layer 30; The second reflective layer
22, 28, 34, 40; The first to fourth contact holes
36a, 36b; The first and second barrier layers
38a, 38b; The first and second bonding pads

Claims (11)

A light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer;
A second reflective layer positioned on the first semiconductor layer; And
And a first reflective layer disposed on the second semiconductor layer,
And an extended reflective layer covering the entire surface of the light emitting structure without discontinuity due to the combination of the first reflective layer and the second reflective layer. The light emitting diode according to claim 1, wherein the first reflective layer is electrically connected to the second semiconductor layer, and the second reflective layer is electrically connected to the first semiconductor layer. The light emitting diode of claim 1, wherein the light emitting structure has a first semiconductor layer and a mesa region in which an active layer is etched, and the first reflective layer extends to the mesa region. The light emitting diode according to claim 1, wherein the light emitting structure has a mesa region in which the first semiconductor layer and the active layer are etched, and the second reflective layer extends to the top of the second semiconductor layer. The light emitting device according to claim 1 or 2, further comprising a first insulating layer having a first contact hole for electrically connecting the first reflective layer and the second semiconductor layer, . The light emitting diode according to claim 5, wherein the first reflective layer is formed on the first contact hole and the first insulating layer. 2. The light emitting diode of claim 1, wherein the second reflective layer extends to have the same profile as the mesa region. 7. The organic electroluminescent device according to any one of claims 1 to 6, further comprising: a first barrier layer located on the first reflective layer;
A second insulating layer located on the first reflective layer except for the region where the first barrier layer is formed;
A first bonding pad disposed on the first barrier layer and the second insulating layer;
A second barrier layer positioned on the second reflective layer; And
Further comprising a second bonding pad located on the second barrier layer. ≪ RTI ID = 0.0 > 11. < / RTI > The light emitting diode according to claim 8, wherein the first reflective layer and the second reflective layer are insulated by a second insulating layer. 9. The light emitting diode of claim 8, wherein the second reflective layer is directly connected to the second barrier layer and the second bonding pad. The method according to claim 1, wherein a pattern or concavity and convexity is formed on at least one of a surface of the first insulating layer constituting the layer with the first reflective layer and a surface of the second insulating layer constituting the layer with the second reflective layer. Lt; / RTI >

KR1020130145803A 2013-11-28 2013-11-28 Light emitting diode having enlarged reflecting layer KR20150062179A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017116094A1 (en) * 2015-12-28 2017-07-06 엘지이노텍 주식회사 Light-emitting element
KR20190056133A (en) * 2017-11-16 2019-05-24 엘지이노텍 주식회사 Semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017116094A1 (en) * 2015-12-28 2017-07-06 엘지이노텍 주식회사 Light-emitting element
CN108431970A (en) * 2015-12-28 2018-08-21 Lg 伊诺特有限公司 Light-emitting component
CN108431970B (en) * 2015-12-28 2022-02-15 苏州乐琻半导体有限公司 Light emitting element
KR20190056133A (en) * 2017-11-16 2019-05-24 엘지이노텍 주식회사 Semiconductor device

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