KR20150056845A - 메모리 셀을 감지하기 위한 셀프 바이어싱 멀티-기준 - Google Patents

메모리 셀을 감지하기 위한 셀프 바이어싱 멀티-기준 Download PDF

Info

Publication number
KR20150056845A
KR20150056845A KR1020157009900A KR20157009900A KR20150056845A KR 20150056845 A KR20150056845 A KR 20150056845A KR 1020157009900 A KR1020157009900 A KR 1020157009900A KR 20157009900 A KR20157009900 A KR 20157009900A KR 20150056845 A KR20150056845 A KR 20150056845A
Authority
KR
South Korea
Prior art keywords
transistor
memory cell
voltage
current value
bit line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020157009900A
Other languages
English (en)
Korean (ko)
Inventor
데이비드 프랜시스 미투스
Original Assignee
마이크로칩 테크놀로지 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 마이크로칩 테크놀로지 인코포레이티드 filed Critical 마이크로칩 테크놀로지 인코포레이티드
Publication of KR20150056845A publication Critical patent/KR20150056845A/ko
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/14—Dummy cell management; Sense reference voltage generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G11C2013/0057—Read done in two steps, e.g. wherein the cell is read twice and one of the two read values serving as a reference value
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits

Landscapes

  • Read Only Memory (AREA)
KR1020157009900A 2012-09-18 2013-09-18 메모리 셀을 감지하기 위한 셀프 바이어싱 멀티-기준 Withdrawn KR20150056845A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261702391P 2012-09-18 2012-09-18
US61/702,391 2012-09-18
US14/029,616 2013-09-17
US14/029,616 US9129680B2 (en) 2012-09-18 2013-09-17 Self-biasing multi-reference
PCT/US2013/060310 WO2014047119A1 (en) 2012-09-18 2013-09-18 Self-biasing multi-reference for sensing memory cell

Publications (1)

Publication Number Publication Date
KR20150056845A true KR20150056845A (ko) 2015-05-27

Family

ID=50274324

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020157009900A Withdrawn KR20150056845A (ko) 2012-09-18 2013-09-18 메모리 셀을 감지하기 위한 셀프 바이어싱 멀티-기준

Country Status (6)

Country Link
US (1) US9129680B2 (enExample)
EP (1) EP2898511A1 (enExample)
JP (1) JP2015531958A (enExample)
KR (1) KR20150056845A (enExample)
CN (1) CN104685568B (enExample)
WO (1) WO2014047119A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102166913B1 (ko) * 2014-01-03 2020-10-16 삼성전자주식회사 셀프 바이어스 버퍼 회로 및 이를 포함하는 메모리 장치
US9142271B1 (en) * 2014-06-24 2015-09-22 Intel Corporation Reference architecture in a cross-point memory
US9947389B1 (en) * 2016-11-30 2018-04-17 Taiwan Semiconductor Manufacturing Co., Ltd. Single ended memory device
US10304514B2 (en) 2017-07-05 2019-05-28 Micron Technology, Inc. Self-reference sensing for memory cells
US10395715B2 (en) * 2017-08-25 2019-08-27 Micron Technology, Inc. Self-referencing memory device
US10475510B2 (en) 2017-12-21 2019-11-12 Macronix International Co., Ltd. Leakage compensation read method for memory device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6052307A (en) * 1998-08-11 2000-04-18 Texas Instruments Incorporated Leakage tolerant sense amplifier
US6407946B2 (en) * 1999-12-08 2002-06-18 Matsushita Electric Industrial Co., Ltd. Nonvolatile semiconductor memory device
US6891768B2 (en) * 2002-11-13 2005-05-10 Hewlett-Packard Development Company, L.P. Power-saving reading of magnetic memory devices
KR100587694B1 (ko) * 2005-02-16 2006-06-08 삼성전자주식회사 리키지 전류 보상 가능한 반도체 메모리 장치
FR2888659A1 (fr) * 2005-07-18 2007-01-19 St Microelectronics Sa Amplificateur de lecture pour memoire non volatile
KR100781984B1 (ko) * 2006-11-03 2007-12-06 삼성전자주식회사 셀프 레퍼런스를 갖는 센스앰프 회로 및 그에 의한 센싱방법
US8467253B2 (en) 2010-05-24 2013-06-18 Hewlett-Packard Development Company, L.P. Reading memory elements within a crossbar array
US9129695B2 (en) * 2012-09-18 2015-09-08 Microchip Technology Incorporated Self-biasing current reference

Also Published As

Publication number Publication date
JP2015531958A (ja) 2015-11-05
CN104685568B (zh) 2018-07-31
WO2014047119A1 (en) 2014-03-27
CN104685568A (zh) 2015-06-03
US9129680B2 (en) 2015-09-08
US20140078831A1 (en) 2014-03-20
EP2898511A1 (en) 2015-07-29

Similar Documents

Publication Publication Date Title
JP4579493B2 (ja) 不揮発性半導体記憶装置及びデータ読出し方法
US9129680B2 (en) Self-biasing multi-reference
US8254178B2 (en) Self-timed integrating differential current
US7724603B2 (en) Method and circuit for preventing high voltage memory disturb
CN101593547A (zh) 感测放大器电路及其数据感测方法
CN101740095A (zh) 存储电路及用于存储电路的追踪电路
CN108172250A (zh) 高速和低功率读出放大器
CN102354530B (zh) 用于无源uhfrfid芯片的eeprom读取装置
KR100893474B1 (ko) 반도체 기억 장치
CN100561598C (zh) 用于快速且准确的存储器读取操作的电路
US7986579B2 (en) Memory device and method thereof
KR100323324B1 (ko) 반도체 메모리 장치
US7352618B2 (en) Multi-level cell memory device and associated read method
US20100027353A1 (en) Erase Method of Flash Device
US9129695B2 (en) Self-biasing current reference
CN103886895B (zh) 一种静态随机存取存储器时序控制电路
JP2003338186A (ja) 半導体不揮発性メモリ装置
CN105225693B (zh) 虚拟接地闪存电路
US8488370B2 (en) Differential threshold voltage non-volatile memory and related methods
US8462565B2 (en) Differential threshold voltage non-volatile memory and related methods
CN101197192A (zh) 闪存的写入电路与其写入方法
US8717825B2 (en) Memory device and corresponding reading method
TWI324774B (en) Biasing and shielding circuit for source side sensing memory
CN106340320A (zh) 一种存储器读取方法及读取系统

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20150416

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid