CN104685568B - 用于感测存储器单元的自偏置多参考 - Google Patents

用于感测存储器单元的自偏置多参考 Download PDF

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Publication number
CN104685568B
CN104685568B CN201380050582.8A CN201380050582A CN104685568B CN 104685568 B CN104685568 B CN 104685568B CN 201380050582 A CN201380050582 A CN 201380050582A CN 104685568 B CN104685568 B CN 104685568B
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CN
China
Prior art keywords
voltage
bit line
transistor
memory cell
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201380050582.8A
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English (en)
Chinese (zh)
Other versions
CN104685568A (zh
Inventor
戴维·弗朗西斯·米图斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Microchip Technology Inc
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Microchip Technology Inc
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Filing date
Publication date
Application filed by Microchip Technology Inc filed Critical Microchip Technology Inc
Publication of CN104685568A publication Critical patent/CN104685568A/zh
Application granted granted Critical
Publication of CN104685568B publication Critical patent/CN104685568B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/14—Dummy cell management; Sense reference voltage generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G11C2013/0057—Read done in two steps, e.g. wherein the cell is read twice and one of the two read values serving as a reference value
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits

Landscapes

  • Read Only Memory (AREA)
CN201380050582.8A 2012-09-18 2013-09-18 用于感测存储器单元的自偏置多参考 Expired - Fee Related CN104685568B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261702391P 2012-09-18 2012-09-18
US61/702,391 2012-09-18
US14/029,616 2013-09-17
US14/029,616 US9129680B2 (en) 2012-09-18 2013-09-17 Self-biasing multi-reference
PCT/US2013/060310 WO2014047119A1 (en) 2012-09-18 2013-09-18 Self-biasing multi-reference for sensing memory cell

Publications (2)

Publication Number Publication Date
CN104685568A CN104685568A (zh) 2015-06-03
CN104685568B true CN104685568B (zh) 2018-07-31

Family

ID=50274324

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380050582.8A Expired - Fee Related CN104685568B (zh) 2012-09-18 2013-09-18 用于感测存储器单元的自偏置多参考

Country Status (6)

Country Link
US (1) US9129680B2 (enExample)
EP (1) EP2898511A1 (enExample)
JP (1) JP2015531958A (enExample)
KR (1) KR20150056845A (enExample)
CN (1) CN104685568B (enExample)
WO (1) WO2014047119A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102166913B1 (ko) * 2014-01-03 2020-10-16 삼성전자주식회사 셀프 바이어스 버퍼 회로 및 이를 포함하는 메모리 장치
US9142271B1 (en) * 2014-06-24 2015-09-22 Intel Corporation Reference architecture in a cross-point memory
US9947389B1 (en) * 2016-11-30 2018-04-17 Taiwan Semiconductor Manufacturing Co., Ltd. Single ended memory device
US10304514B2 (en) 2017-07-05 2019-05-28 Micron Technology, Inc. Self-reference sensing for memory cells
US10395715B2 (en) * 2017-08-25 2019-08-27 Micron Technology, Inc. Self-referencing memory device
US10475510B2 (en) 2017-12-21 2019-11-12 Macronix International Co., Ltd. Leakage compensation read method for memory device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1612801A1 (en) * 2002-11-13 2006-01-04 Hewlett-Packard Development Company, L.P. Power-saving reading of magnetic memory devices
US20110286259A1 (en) * 2010-05-24 2011-11-24 Hewlett-Packard Development Company, L.P. Reading Memory Elements Within a Crossbar Array
CN101174467B (zh) * 2006-11-03 2012-06-06 三星电子株式会社 自参考读出放大器电路和读出方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6052307A (en) * 1998-08-11 2000-04-18 Texas Instruments Incorporated Leakage tolerant sense amplifier
US6407946B2 (en) * 1999-12-08 2002-06-18 Matsushita Electric Industrial Co., Ltd. Nonvolatile semiconductor memory device
KR100587694B1 (ko) * 2005-02-16 2006-06-08 삼성전자주식회사 리키지 전류 보상 가능한 반도체 메모리 장치
FR2888659A1 (fr) * 2005-07-18 2007-01-19 St Microelectronics Sa Amplificateur de lecture pour memoire non volatile
US9129695B2 (en) * 2012-09-18 2015-09-08 Microchip Technology Incorporated Self-biasing current reference

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1612801A1 (en) * 2002-11-13 2006-01-04 Hewlett-Packard Development Company, L.P. Power-saving reading of magnetic memory devices
CN101174467B (zh) * 2006-11-03 2012-06-06 三星电子株式会社 自参考读出放大器电路和读出方法
US20110286259A1 (en) * 2010-05-24 2011-11-24 Hewlett-Packard Development Company, L.P. Reading Memory Elements Within a Crossbar Array

Also Published As

Publication number Publication date
JP2015531958A (ja) 2015-11-05
WO2014047119A1 (en) 2014-03-27
CN104685568A (zh) 2015-06-03
US9129680B2 (en) 2015-09-08
US20140078831A1 (en) 2014-03-20
KR20150056845A (ko) 2015-05-27
EP2898511A1 (en) 2015-07-29

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Granted publication date: 20180731

Termination date: 20190918