KR20150023832A - Igzo 스퍼터링 타깃 및 igzo 막 - Google Patents

Igzo 스퍼터링 타깃 및 igzo 막 Download PDF

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Publication number
KR20150023832A
KR20150023832A KR1020157001570A KR20157001570A KR20150023832A KR 20150023832 A KR20150023832 A KR 20150023832A KR 1020157001570 A KR1020157001570 A KR 1020157001570A KR 20157001570 A KR20157001570 A KR 20157001570A KR 20150023832 A KR20150023832 A KR 20150023832A
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South Korea
Prior art keywords
phase
raw material
sputtering
zno
surface area
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KR1020157001570A
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English (en)
Korean (ko)
Inventor
고조 오사다
고지 가쿠타
도시야 구리하라
Original Assignee
제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤
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Publication of KR20150023832A publication Critical patent/KR20150023832A/ko

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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3286—Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
    • C04B2235/54—Particle size related information
    • C04B2235/5409—Particle size related information expressed by specific surface values
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
    • C04B2235/54—Particle size related information
    • C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
    • C04B2235/5436—Particle size related information expressed by the size of the particles or aggregates thereof micrometer sized, i.e. from 1 to 100 micron
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/658—Atmosphere during thermal treatment
    • C04B2235/6583—Oxygen containing atmosphere, e.g. with changing oxygen pressures
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/77—Density
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/78—Grain sizes and shapes, product microstructures, e.g. acicular grains, equiaxed grains, platelet-structures
    • C04B2235/785—Submicron sized grains, i.e. from 0,1 to 1 micron
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/78—Grain sizes and shapes, product microstructures, e.g. acicular grains, equiaxed grains, platelet-structures
    • C04B2235/786—Micrometer sized grains, i.e. from 1 to 100 micron
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/80—Phases present in the sintered or melt-cast ceramic products other than the main phase

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Physical Vapour Deposition (AREA)
KR1020157001570A 2013-03-29 2014-03-11 Igzo 스퍼터링 타깃 및 igzo 막 KR20150023832A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2013-071170 2013-03-29
JP2013071170 2013-03-29
PCT/JP2014/056250 WO2014156601A1 (ja) 2013-03-29 2014-03-11 Ｉｇｚｏスパッタリングターゲット及びｉｇｚｏ膜

Related Child Applications (1)

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KR1020177004745A Division KR101973873B1 (ko) 2013-03-29 2014-03-11 Igzo 스퍼터링 타깃 및 igzo 막

Publications (1)

Publication Number Publication Date
KR20150023832A true KR20150023832A (ko) 2015-03-05

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Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020177004745A KR101973873B1 (ko) 2013-03-29 2014-03-11 Igzo 스퍼터링 타깃 및 igzo 막
KR1020157001570A KR20150023832A (ko) 2013-03-29 2014-03-11 Igzo 스퍼터링 타깃 및 igzo 막

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Country Status (5)

Country Link
JP (1) JP5883990B2 (ja)
KR (2) KR101973873B1 (ja)
CN (1) CN105308208A (ja)
TW (1) TWI639722B (ja)
WO (1) WO2014156601A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10161031B2 (en) * 2015-02-27 2018-12-25 Jx Nippon Mining & Metals Corporation Oxide sintered compact and sputtering target formed from said oxide sintered compact
JP6125689B1 (ja) * 2016-03-31 2017-05-10 Ｊｘ金属株式会社 酸化インジウム−酸化亜鉛系（ｉｚｏ）スパッタリングターゲット
CN110770191B (zh) * 2018-04-18 2022-05-13 三井金属矿业株式会社 氧化物烧结体、溅射靶和氧化物薄膜的制造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3862385B2 (ja) 1996-11-08 2006-12-27 Ｄｏｗａホールディングス株式会社 酸化スズ含有酸化インジウム粉及び焼結体の製造方法
WO2006051995A1 (en) 2004-11-10 2006-05-18 Canon Kabushiki Kaisha Field effect transistor employing an amorphous oxide
JP4807331B2 (ja) 2007-06-18 2011-11-02 住友金属鉱山株式会社 酸化インジウム系スパッタリングターゲットの製造方法
JP5403390B2 (ja) 2008-05-16 2014-01-29 出光興産株式会社 インジウム、ガリウム及び亜鉛を含む酸化物
US8623511B2 (en) * 2008-06-06 2014-01-07 Idemitsu Kosan Co., Ltd. Sputtering target for oxide thin film and process for producing the sputtering target
KR20110027805A (ko) * 2008-06-27 2011-03-16 이데미쓰 고산 가부시키가이샤 ＩｎＧａＯ３（ＺｎＯ） 결정상을 포함하는 산화물 반도체용 스퍼터링 타겟 및 그의 제조 방법
WO2010140548A1 (ja) * 2009-06-05 2010-12-09 Jx日鉱日石金属株式会社 酸化物焼結体、その製造方法及び酸化物焼結体製造用原料粉末
JP4875135B2 (ja) * 2009-11-18 2012-02-15 出光興産株式会社 Ｉｎ−Ｇａ−Ｚｎ−Ｏ系スパッタリングターゲット
JP5690063B2 (ja) * 2009-11-18 2015-03-25 出光興産株式会社 Ｉｎ−Ｇａ−Ｚｎ系酸化物焼結体スパッタリングターゲット及び薄膜トランジスタ
JP4843083B2 (ja) 2009-11-19 2011-12-21 出光興産株式会社 Ｉｎ−Ｇａ−Ｚｎ系酸化物スパッタリングターゲット
JP5591523B2 (ja) * 2009-11-19 2014-09-17 出光興産株式会社 長期成膜時の安定性に優れたＩｎ−Ｇａ−Ｚｎ−Ｏ系酸化物焼結体スパッタリングターゲット
JP5596963B2 (ja) * 2009-11-19 2014-09-24 出光興産株式会社 スパッタリングターゲット及びそれを用いた薄膜トランジスタ
JP5437825B2 (ja) * 2010-01-15 2014-03-12 出光興産株式会社 Ｉｎ−Ｇａ−Ｏ系酸化物焼結体、ターゲット、酸化物半導体薄膜及びこれらの製造方法
JP2012052227A (ja) * 2010-08-05 2012-03-15 Mitsubishi Materials Corp スパッタリングターゲットの製造方法およびスパッタリングターゲット
JP5767015B2 (ja) * 2011-05-10 2015-08-19 出光興産株式会社 薄膜トランジスタ
JP2014062316A (ja) * 2012-09-03 2014-04-10 Idemitsu Kosan Co Ltd スパッタリングターゲット

Also Published As

Publication number Publication date
CN105308208A (zh) 2016-02-03
TW201506182A (zh) 2015-02-16
KR20170023201A (ko) 2017-03-02
KR101973873B1 (ko) 2019-04-29
TWI639722B (zh) 2018-11-01
JPWO2014156601A1 (ja) 2017-02-16
JP5883990B2 (ja) 2016-03-15
WO2014156601A1 (ja) 2014-10-02

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